Semiconductor module for power conversion

Shinkai November 12, 2

Patent Grant D693318

U.S. patent number D693,318 [Application Number D/416,998] was granted by the patent office on 2013-11-12 for semiconductor module for power conversion. This patent grant is currently assigned to Sumitomo Electric Industries, Ltd.. The grantee listed for this patent is Jiro Shinkai. Invention is credited to Jiro Shinkai.


United States Patent D693,318
Shinkai November 12, 2013

Semiconductor module for power conversion

Claims

CLAIM The ornamental design for a semiconductor module for power conversion, as shown and described.
Inventors: Shinkai; Jiro (Osaka, JP)
Applicant:
Name City State Country Type

Shinkai; Jiro

Osaka

N/A

JP
Assignee: Sumitomo Electric Industries, Ltd. (Osaka-shi, JP)
Appl. No.: D/416,998
Filed: March 29, 2012

Foreign Application Priority Data

Oct 27, 2011 [JP] D2011-024803
Oct 27, 2011 [JP] D2011-024804
Current U.S. Class: D13/182
Current International Class: 1303
Field of Search: ;D13/110,182 ;361/748,760,783,787,813,774,784,785,713,728,736,752 ;257/787,668,678,690

References Cited [Referenced By]

U.S. Patent Documents
D357671 April 1995 Terasawa et al.
D357672 April 1995 Terasawa et al.
D357901 May 1995 Horman
D389808 January 1998 Yamada et al.
5956231 September 1999 Yamada et al.
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D466093 November 2002 Ebihara et al.
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D587662 March 2009 Soutome et al.
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Foreign Patent Documents
477628 Feb 2002 TW

Other References

Notice of Allowance in Taiwan Design Patent Application No. 101301952 dated Jan. 23, 2013. cited by applicant.

Primary Examiner: Oswecki; Elizabeth J
Attorney, Agent or Firm: Venable LLP Sartori; Michael A. Aga; Tamatane J.

Description



FIG. 1 is a front view of a first embodiment of a semiconductor module for power conversion showing my new design;

FIG. 2 is a rear view thereof;

FIG. 3 is a top view thereof;

FIG. 4 is a bottom view thereof;

FIG. 5 is a right side view thereof;

FIG. 6 is a left side view thereof;

FIG. 7 is a front, right, top perspective view thereof;

FIG. 8 is a cross sectional view of the semiconductor module for power conversion of FIG. 1 taken along lines 8-8 of FIG. 1;

FIG. 9 is a front, right, top perspective view of the semiconductor module for power conversion of FIG. 1 shown in a used condition;

FIG. 10 a front view of a second embodiment of a semiconductor module for power conversion showing my new design;

FIG. 11 is a rear view thereof;

FIG. 12 is a top view thereof;

FIG. 13 is a bottom view thereof;

FIG. 14 is a right side view thereof;

FIG. 15 is a left side view thereof;

FIG. 16 is a front, right, top perspective view thereof;

FIG. 17 is a cross sectional view of the semiconductor module for power conversion of FIG. 1 taken along lines 17-17 of FIG. 10; and,

FIG. 18 is a front, right, top perspective view of the semiconductor module for power conversion of FIG. 10 shown in a used condition.

The broken lines shown in the drawings represent portions of the semiconductor module for power conversion that form no part of the claimed design.

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