Grounded electrode for a plasma processing apparatus

Description

FIG. 1 is a front, top and right side perspective view of grounded electrode for a plasma processing apparatus showing our new design;

FIG. 2 is a front elevational view thereof;

FIG. 3 is a right side elevational view thereof;

FIG. 4 is a left side elevational view thereof;

FIG. 5 is a top plan elevational view thereof;

FIG. 6 is a rear elevational view thereof; and,

FIG. 7 is a bottom plan elevational view thereof.

Claims

CLAIM The ornamental design for grounded electrode for a plasma processing apparatus, as shown.

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Inventors:	Nakamura; Tsutomu (Hikari, JP), Tauchi; Susumu (Shunan, JP), Makino; Akitaka (Hikari, JP)
Assignee:	Hitachi High-Technologies Corporation (Tokyo, JP)
Appl. No.:	D/236,982
Filed:	August 25, 2005

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Current U.S. Class:	D13/182
Current International Class:	1303
Field of Search:	;D13/182,158-177,184 ;204/286,297 ;205/118,123 ;200/1R,5R,52R,315,310,6A,302.1,308,314,317,11R,16B

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References Cited [Referenced By]

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U.S. Patent Documents

D404370	January 1999	Kimura
D404372	January 1999	Ishii
D427570	July 2000	Ishii
6495007	December 2002	Wang
6663762	December 2003	Bleck et al.
6749728	June 2004	Wang
D494551	August 2004	Doba
D494552	August 2004	Tezuka et al.
6843894	January 2005	Berner et al.
6908540	June 2005	Kholodenko
7025862	April 2006	Herchen et al.
7087144	August 2006	Herchen
7138039	November 2006	Burkhart et al.
2003/0066484	April 2003	Morikage et al.

Primary Examiner: Sikder; Selina
Assistant Examiner: Johannes; Thomas J
Attorney, Agent or Firm: Antonelli, Terry, Stout & Kraus, LLP.