U.S. patent application number 17/227391 was filed with the patent office on 2022-08-25 for light emitting diode package structure and manufacturing method thereof and manufacturing method of display device.
This patent application is currently assigned to Unimicron Technology Corp.. The applicant listed for this patent is Unimicron Technology Corp.. Invention is credited to Cheng-Ta Ko, Chi-Hai Kuo, Jeng-Ting Li, Pu-Ju Lin.
Application Number | 20220271208 17/227391 |
Document ID | / |
Family ID | |
Filed Date | 2022-08-25 |
United States Patent
Application |
20220271208 |
Kind Code |
A1 |
Li; Jeng-Ting ; et
al. |
August 25, 2022 |
LIGHT EMITTING DIODE PACKAGE STRUCTURE AND MANUFACTURING METHOD
THEREOF AND MANUFACTURING METHOD OF DISPLAY DEVICE
Abstract
A light emitting diode (LED) package structure includes a glass
substrate, conductive through holes, active elements, an insulating
layer, LEDs and pads. The glass substrate has an upper surface and
a lower surface. The conductive through holes penetrate the glass
substrate and connect the upper and the lower surfaces. The active
elements are disposed on the upper surface of the glass substrate
and electrically connected to the conductive through holes. The
insulating layer is disposed on the upper surface and covers the
active elements. The LEDs are disposed on the insulating layer and
electrically connected to at least one of the active elements. The
pads are disposed on the lower surface of the glass substrate and
electrically connected to the conductive through holes. A source of
at least one active elements is directly electrically connected to
at least one of the corresponding pads through the corresponding
conductive through hole.
Inventors: |
Li; Jeng-Ting; (Pingtung
County, TW) ; Kuo; Chi-Hai; (Taoyuan City, TW)
; Ko; Cheng-Ta; (Taipei City, TW) ; Lin;
Pu-Ju; (Hsinchu City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Unimicron Technology Corp. |
Taoyuan City |
|
TW |
|
|
Assignee: |
Unimicron Technology Corp.
Taoyuan City
TW
|
Appl. No.: |
17/227391 |
Filed: |
April 12, 2021 |
International
Class: |
H01L 33/62 20060101
H01L033/62; H01L 27/15 20060101 H01L027/15; H01L 33/00 20060101
H01L033/00 |
Foreign Application Data
Date |
Code |
Application Number |
Feb 22, 2021 |
TW |
110106107 |
Claims
1. A light emitting diode package structure, comprising: a glass
substrate, having an upper surface and a lower surface opposite to
each other; a plurality of conductive through holes, penetrating
the glass substrate and connecting the upper surface and the lower
surface; a plurality of active elements, disposed on the upper
surface of the glass substrate and electrically connected to the
plurality of conductive through holes; an insulating layer,
disposed on the upper surface of the glass substrate and covering
the plurality of active elements; a plurality of light emitting
diodes, disposed on the insulating layer and electrically connected
to at least one of the plurality of active elements; and a
plurality of pads, disposed on the lower surface of the glass
substrate and electrically connected to the plurality of conductive
through holes, wherein a source of the at least one of the
plurality of active elements is electrically connected to at least
one of the plurality of corresponding pads directly through the
corresponding conductive through hole.
2. The light emitting diode package structure as described in claim
1, wherein each of the plurality of active elements comprises: a
gate, disposed on the upper surface of the glass substrate; the
source, disposed on the upper surface of the glass substrate,
wherein the gate and the source belong to a same layer; a gate
insulating layer, disposed on the upper surface of the glass
substrate and covering the gate; an active layer, disposed on the
upper surface of the glass substrate and covering the gate
insulating layer and part of the source; and a drain, disposed on
the active layer, wherein the plurality of light emitting diodes
are electrically connected, respectively, to the drain of each of
the plurality of active elements.
3. The light emitting diode package structure as described in claim
2, wherein the plurality of pads are electrically connected to the
source and the gate of each of the plurality of active elements
through the plurality of conductive through holes.
4. The light emitting diode package structure as described in claim
2, further comprising: a reconfiguration circuit layer, disposed on
the lower surface of the glass substrate and comprising at least
one reconfiguration circuit, a plurality of conductive holes and
the plurality of pads, wherein the plurality of conductive holes
connect the at least one reconfiguration circuit and the plurality
of conductive through holes and connect the at least one
reconfiguration circuit and the plurality of pads, wherein the gate
of each of the plurality of active elements is electrically
connected to the plurality of pads of the reconfiguration circuit
layer through the plurality of conductive through holes.
5. The light emitting diode package structure as described in claim
2, further comprising: a patterned circuit layer, disposed on the
insulating layer; and a plurality of conductive holes, disposed in
the insulating layer and electrically connecting the patterned
circuit layer and the drain of each of the plurality of active
elements, wherein the plurality of light emitting diodes are
electrically connected, respectively, to the plurality of active
elements through the patterned circuit layer and the plurality of
conductive holes.
6. The light emitting diode package structure as described in claim
1, wherein the plurality of active elements comprise a first active
element and a second active element, wherein the first active
element comprises a first gate, a first source, a first active
layer, a first gate insulating layer, and a first drain, wherein
the first gate, the first source, the first active layer, and the
first gate insulating layer are disposed on the upper surface of
the glass substrate, the first gate and the first source belong to
a same layer, the first gate insulating layer covers the first
gate, the first active layer covers the first gate insulating layer
and part of the first source, and the first drain is disposed on
the first active layer; the second active element comprises a
second gate, the source, a second active layer, a second gate
insulating layer, and a second drain, wherein the second gate, the
source, the second active layer, the second gate insulating layer,
and the second drain are disposed on the upper surface of the glass
substrate, the second gate, the source, and the second drain belong
to a same layer, the second gate insulating layer covers the second
gate, and the second active layer covers the second gate insulating
layer, part of the source, and part of the second drain; and the
plurality of conductive through holes are electrically connected to
the first gate of the first active element, the second gate of the
second active element, the source, and the second drain.
7. The light emitting diode package structure as described in claim
6, further comprising: a first reconfiguration circuit layer,
disposed on the insulating layer, wherein the plurality of light
emitting diodes are electrically connected to the first drain of
the first active element through the first reconfiguration circuit
layer.
8. The light emitting diode package structure as described in claim
7, further comprising: a second reconfiguration circuit layer,
disposed on the lower surface of the glass substrate and comprising
the at least one reconfiguration circuit, a plurality of conductive
holes, and the plurality of pads, wherein the plurality of
conductive holes connect the at least one reconfiguration circuit
and the plurality of conductive through holes and connect the at
least one reconfiguration circuit and the plurality of pads,
wherein the second gate of the second active element and the source
are electrically connected to the plurality of pads of the second
reconfiguration circuit layer through the plurality of conductive
through holes.
9. The light emitting diode package structure as described in claim
8, further comprising: a passive element, embedded in the second
reconfiguration circuit layer, wherein the plurality of conductive
through holes connecting the first gate of the first active element
and connecting the second drain of the second active element are
electrically connected to the passive element.
10. A manufacturing method of light emitting diode package
structure, the manufacturing method comprising: providing a glass
substrate, the glass substrate having an upper surface and a lower
surface opposite to each other; forming a plurality of conductive
through holes penetrating the glass substrate, the plurality of
conductive through holes connecting the upper surface and the lower
surface; forming a plurality of active elements on the upper
surface of the glass substrate, the plurality of active elements
electrically connected to the plurality of conductive through
holes; forming an insulating layer on the upper surface of the
glass substrate, the insulating layer covering the plurality of
active elements; bonding a plurality of light emitting diodes on
the insulating layer, the plurality of light emitting diodes
electrically connected to at least one of the plurality of active
elements; and forming a plurality of pads on the lower surface of
the glass substrate, the plurality of pads electrically connected
to the plurality of conductive through holes, wherein a source of
the at least one of the plurality of active elements is
electrically connected to at least one of the plurality of
corresponding pads directly through the corresponding conductive
through hole.
11. The manufacturing method of light emitting diode package
structure as described in claim 10, wherein steps of forming each
of the plurality of active elements on the upper surface of the
glass substrate comprise: forming a gate and the source on the
upper surface of the glass substrate, wherein the gate and the
source belong to a same layer; forming a gate insulating layer on
the upper surface of the glass substrate, the gate insulating layer
covering the gate; forming an active layer on the upper surface of
the glass substrate, the active layer covering the gate insulating
layer and part of the source; and forming a drain on the active
layer, wherein the plurality of light emitting diodes are
electrically connected, respectively, to the drain of each of the
plurality of active elements.
12. The manufacturing method of light emitting diode package
structure as described in claim 11, wherein the plurality of pads
are formed on the lower surface of the glass substrate at the same
time when forming the gate and the source, and the plurality of
pads are electrically connected to the source and the gate of each
of the plurality of active elements through the plurality of
conductive through holes.
13. The manufacturing method of light emitting diode package
structure as described in claim 11, further comprising: forming a
reconfiguration circuit layer on the lower surface of the glass
substrate, the reconfiguration circuit layer comprising at least
one reconfiguration circuit, a plurality of conductive holes and
the plurality of pads, wherein the plurality of conductive holes
connect the at least one reconfiguration circuit and the plurality
of conductive through holes and connect the at least one
reconfiguration circuit and the plurality of pads, wherein the gate
of each of the plurality of active elements is electrically
connected to the plurality of pads of the reconfiguration circuit
layer through the plurality of conductive through holes.
14. The manufacturing method of light emitting diode package
structure as described in claim 11, wherein after forming the
insulating layer and before providing the plurality of light
emitting diodes further comprising: forming a patterned circuit
layer and a plurality of conductive holes, wherein the patterned
circuit layer is disposed on the insulating layer, and the
plurality of conductive holes are disposed in the insulating layer
and electrically connect the patterned circuit layer and the drain
of each of the plurality of active elements, wherein the plurality
of light emitting diodes are electrically connected, respectively,
to the plurality of active elements through the patterned circuit
layer and the plurality of conductive holes.
15. The manufacturing method of light emitting diode package
structure as described in claim 10, wherein the plurality of active
elements comprise a first active element and a second active
element, the first active element comprises a first gate, a first
source, a first active layer, a first gate insulating layer, and a
first drain, wherein the first gate, the first source, the first
active layer, and the first gate insulating layer are disposed on
the upper surface of the glass substrate, the first gate and the
first source belong to a same layer, the first gate insulating
layer covers the first gate, the first active layer covers the
first gate insulating layer and part of the first source, and the
first drain is disposed on the first active layer; the second
active element comprises a second gate, the source, a second active
layer, a second gate insulating layer, and a second drain, wherein
the second gate, the source, the second active layer, the second
gate insulating layer, and the second drain are disposed on the
upper surface of the glass substrate, the second gate, the source,
and the second drain belong to a same layer, the second gate
insulating layer covers the second gate, and the second active
layer covers the second gate insulating layer, part of the source,
and part of the second drain; and the plurality of conductive
through holes are electrically connected to the first gate of the
first active element, the second gate of the second active element,
the source, and the second drain.
16. The manufacturing method of light emitting diode package
structure as described in claim 15, further comprising: forming a
first reconfiguration circuit layer on the insulating layer after
forming the insulating layer and before providing the plurality of
light emitting diodes, wherein the plurality of light emitting
diodes are electrically connected to the first drain of the first
active element through the first reconfiguration circuit layer.
17. The manufacturing method of light emitting diode package
structure as described in claim 16, further comprising: forming a
second reconfiguration circuit layer on the lower surface of the
glass substrate, the second reconfiguration circuit layer
comprising at least one reconfiguration circuit, a plurality of
conductive holes, and the plurality of pads, wherein the plurality
of conductive holes connect the at least one reconfiguration
circuit and the plurality of conductive through holes and connect
the at least one reconfiguration circuit and the plurality of pads,
wherein the second gate of the second active element and the source
are electrically connected to the plurality of pads of the second
reconfiguration circuit layer through the plurality of conductive
through holes.
18. The manufacturing method of light emitting diode package
structure as described in claim 17, further comprising: embedding a
passive element in the second reconfiguration circuit layer,
wherein the plurality of conductive through holes connecting the
first gate of the first active element and connecting the second
drain of the second active element are electrically connected to
the passive element.
19. A manufacturing method of display device, the manufacturing
method comprising: providing a carrier board; and providing a light
emitting diode package structure, the light emitting diode package
structure comprising: a glass substrate, having an upper surface
and a lower surface opposite to each other; a plurality of
conductive through holes, penetrating the glass substrate and
connecting the upper surface and the lower surface; a plurality of
active elements, disposed on the upper surface of the glass
substrate and electrically connected to the plurality of conductive
through holes; an insulating layer, disposed on the upper surface
of the glass substrate and covering the plurality of active
elements; a plurality of light emitting diodes, disposed on the
insulating layer and electrically connected to at least one of the
plurality of active elements; and a plurality of pads, disposed on
the lower surface of the glass substrate and electrically connected
to the plurality of conductive through holes, wherein a source of
the at least one of the plurality of active elements is
electrically connected to at least one of the plurality of
corresponding pads directly through the corresponding conductive
through hole; singulating the light emitting diode package
structure so as to form a plurality of independent light emitting
diode package units; and assembling the plurality of light emitting
diode package units on the carrier board so as to form a display
device, wherein each of the plurality of light emitting diode
package units is directly electrically connected to the carrier
board through the plurality of pads.
20. The manufacturing method of display device as described in
claim 19, wherein the number of the plurality of light emitting
diodes in each of the plurality of light emitting diode package
units is three, and the plurality of light emitting diodes are a
red micro light emitting diode, a green micro light emitting diode,
and a blue micro light emitting diode.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of Taiwan
application serial no. 110106107, filed on Feb. 22, 2021. The
entirety of the above-mentioned patent application is hereby
incorporated by reference herein and made a part of this
specification.
BACKGROUND OF THE INVENTION
Technical Field
[0002] The disclosure relates to a package structure and
manufacturing method thereof, and particularly relates to a light
emitting diode package structure and manufacturing method thereof
and a manufacturing method of display device having such light
emitting diode package structure.
Description of Related Art
[0003] The current assembly method of active micro light emitting
diode displays is to first transfer micro light emitting diodes to
the substrate of a large-sized thin film transistor (TFT) by means
of a mass transfer, and then to splice the entire structure onto
the circuit board so as to complete the manufacturing of the
display device. However, the above assembly method faces many
problems, including: 1.) large-sized thin film transistor
substrates have larger warp, so when spliced onto the circuit
board, they are prone to warpages, which makes the post-packaging
process more difficult; 2.) in case of thin film transistors on
large-sized thin film transistor substrates that need to be
repaired, it is very difficult to repair them because the micro
light emitting diodes have been transferred thereto by mass
transfer; 3.) Thin-film transistor substrates are based on glass,
therefore external circuits or electronic components cannot be
directly soldered on their back sides. Due to the above three
factors, not only is the manufacturing yield rate of active micro
light emitting diode displays reduced, but also the difficulty of
manufacturing large-sized, high-unit pixel displays is
increased.
SUMMARY OF THE INVENTION
[0004] The disclosure provides a light emitting diode package
structure and manufacturing method thereof, in which active
elements and pads located on opposite surfaces of the glass
substrate are connected through the conductive through holes
penetrating the glass substrate, and other external circuits or
electronic components can be directly soldered thereto through the
pads located under the glass substrate.
[0005] The disclosure also provides a manufacturing method of
display device, including the light emitting diode package
structure, which can solve existing problems and has better
structure reliability.
[0006] A light emitting diode package structure of the disclosure
includes a glass substrate, multiple conductive through holes,
multiple active elements, an insulating layer, multiple light
emitting diodes, and multiple pads. A glass substrate has an upper
surface and a lower surface opposite to each other. Multiple
conductive through holes penetrate the glass substrate and connect
the upper surface and the lower surface. Multiple active elements
are disposed on the upper surface of the glass substrate and
electrically connected to the multiple conductive through holes. An
insulating layer is disposed on the upper surface of the glass
substrate and covers the multiple active elements. Multiple light
emitting diodes are disposed on the insulating layer and
electrically connected to at least one of the multiple active
elements. Multiple pads are disposed on the lower surface of the
glass substrate and electrically connected to the multiple
conductive through holes. A source of the at least one of the
multiple active elements is electrically connected to at least one
of the multiple corresponding pads directly through the
corresponding conductive through hole.
[0007] In an embodiment of the disclosure, each of the multiple
active elements includes: a gate, a source, a gate insulating
layer, an active layer, and a drain. A gate is disposed on the
upper surface of the glass substrate. The source is formed on the
upper surface of the glass substrate, where the gate and the source
belong to a same layer. A gate insulating layer is disposed on the
upper surface of the glass substrate and covers the gate. An active
layer is disposed on the upper surface of the glass substrate and
covers the gate insulating layer and part of the source. A drain is
disposed on the active layer, where the multiple light emitting
diodes are electrically connected, respectively, to the drain of
each of the multiple active elements.
[0008] In an embodiment of the disclosure, the multiple pads are
electrically connected to the source and the gate of each of the
multiple active elements through the multiple conductive through
holes.
[0009] In an embodiment of the disclosure, the light emitting diode
package structure further includes: a reconfiguration circuit layer
disposed on the lower surface of the glass substrate and including
at least one reconfiguration circuit, the multiple conductive
holes, and the multiple pads. The multiple conductive holes connect
the at least one reconfiguration circuit and the multiple
conductive through holes and connect the at least one
reconfiguration circuit and the multiple pads. The gate of each of
the multiple active elements is electrically connected to the
multiple pads of the reconfiguration circuit layer through the
multiple conductive through holes.
[0010] In an embodiment of the disclosure, the light emitting diode
package structure further includes a patterned circuit layer and
multiple conductive holes. A patterned circuit layer is disposed on
the insulating layer. Multiple conductive holes are disposed in the
insulating layer and electrically connect the patterned circuit
layer and the drain of each of the multiple active elements. The
multiple light emitting diodes are electrically connected,
respectively, to the multiple active elements through the patterned
circuit layer and the multiple conductive holes.
[0011] In an embodiment of the disclosure, the multiple active
elements include a first active element and a second active
element. The first active element includes a first gate, a first
source, a first active layer, a first gate insulating layer, and a
first drain. The first gate, the first source, the first active
layer, and the first gate insulating layer are disposed on the
upper surface of the glass substrate. The first gate and the first
source belong to a same layer. The first gate insulating layer
covers the first gate. The first active layer covers the first gate
insulating layer and part of the first source. The first drain is
disposed on the first active layer. The second active element
includes a second gate, the source, a second active layer, a second
gate insulating layer, and a second drain. The second gate, the
source, the second active layer, the second gate insulating layer,
and the second drain are disposed on the upper surface of the glass
substrate. The second gate, the source, and the second drain belong
to a same layer. The second gate insulating layer covers the second
gate. The second active layer covers the second gate insulating
layer, part of the source, and part of the second drain. The
multiple conductive through holes are electrically connected to the
first gate of the first active element, the second gate of the
second active element, the source, and the second drain.
[0012] In an embodiment of the disclosure, the light emitting diode
package structure further includes a first reconfiguration circuit
layer disposed on the insulating layer. The multiple light emitting
diodes are electrically connected to the first drain of the first
active element through the first reconfiguration circuit layer.
[0013] In an embodiment of the disclosure, the light emitting diode
package structure further includes a second reconfiguration circuit
layer disposed on the lower surface of the glass substrate and
including the at least one reconfiguration circuit, multiple
conductive holes, and the multiple pads. The multiple conductive
holes connecting the at least one reconfiguration circuit and the
multiple conductive through holes and connecting the at least one
reconfiguration circuit and the multiple pads. The second gate of
the second active element and the source are electrically connected
to the multiple pads of the second reconfiguration circuit layer
through the multiple conductive through holes.
[0014] In an embodiment of the disclosure, the light emitting diode
package structure further includes a passive element embedded in
the second reconfiguration circuit layer. The multiple conductive
through holes connect the first gate of the first active element
and connect the second drain of the second active element are
electrically connected to the passive element.
[0015] A manufacturing method of light emitting diode package
structure includes the following steps. A glass substrate is
provided. The glass substrate has an upper surface and a lower
surface opposite to each other. Multiple conductive through holes
are formed penetrating the glass substrate. The multiple conductive
through holes connect the upper surface and the lower surface.
Multiple active elements are formed on the upper surface of the
glass substrate. The multiple active elements are electrically
connected to the multiple conductive through holes. An insulating
layer is formed on the upper surface of the glass substrate, the
insulating layer covering the multiple active elements. Multiple
light emitting diodes are bonded on the insulating layer. The
multiple light emitting diodes are electrically connected to at
least one of the multiple active elements. Multiple pads are formed
on the lower surface of the glass substrate, and the multiple pads
are electrically connected to the multiple conductive through
holes. A source of the at least one of the multiple active elements
is electrically connected to at least one of the multiple
corresponding pads directly through the corresponding conductive
through hole.
[0016] In an embodiment of the disclosure, steps of forming each of
the multiple active elements on the upper surface of the glass
substrate include the following. A gate and the source are formed
on the upper surface of the glass substrate, where the gate and the
source belong to a same layer. A gate insulating layer is formed on
the upper surface of the glass substrate, the gate insulating layer
covering the gate. An active layer is formed on the upper surface
of the glass substrate, the active layer covering the gate
insulating layer and part of the source. A drain is formed on the
active layer, where the multiple light emitting diodes are
electrically connected, respectively, to the drain of each of the
multiple active elements.
[0017] In an embodiment of the disclosure, the multiple pads are
formed on the lower surface of the glass substrate at the same time
when forming the gate and the source. The multiple pads are
electrically connected to the source and the gate of each of the
multiple active elements through the multiple conductive through
holes.
[0018] In an embodiment of the disclosure, the manufacturing method
of light emitting diode package structure further includes forming
a reconfiguration circuit layer on the lower surface of the glass
substrate. The reconfiguration circuit layer includes at least one
reconfiguration circuit, multiple conductive holes, and the
multiple pads. The multiple conductive holes connect the at least
one reconfiguration circuit and the multiple conductive through
holes and connect the at least one reconfiguration circuit and the
multiple pads. The gate of each of the multiple active elements is
electrically connected to the multiple pads of the reconfiguration
circuit layer through the multiple conductive through holes.
[0019] In an embodiment of the disclosure, after forming the
insulating layer and before providing the light emitting diodes
further includes forming a patterned circuit layer and multiple
conductive holes. The patterned circuit layer is disposed on the
insulating layer, and the multiple conductive holes are disposed in
the insulating layer and electrically connect the patterned circuit
layer and the drain of each of the multiple active elements. The
multiple light emitting diodes are electrically connected,
respectively, to the multiple active elements through the patterned
circuit layer and the multiple conductive holes.
[0020] In an embodiment of the disclosure, the multiple active
elements include a first active element and a second active
element. The first active element includes a first gate, a first
source, a first active layer, a first gate insulating layer, and a
first drain. The first gate, the first source, the first active
layer, and the first gate insulating layer are disposed on the
upper surface of the glass substrate. The first gate and the first
source belong to a same layer. The first gate insulating layer
covers the first gate, the first active layer covers the first gate
insulating layer and part of the first source, and the first drain
is disposed on the first active layer. The second active element
includes a second gate, the source, a second active layer, a second
gate insulating layer, and a second drain. The second gate, the
source, the second active layer, the second gate insulating layer,
and the second drain are disposed on the upper surface of the glass
substrate. The second gate, the source, and the second drain belong
to a same layer.
[0021] The second gate insulating layer covers the second gate, and
the second active layer covers the second gate insulating layer,
part of the source, and part of the second drain. The multiple
conductive through holes are electrically connected to the first
gate of the first active element, the second gate of the second
active element, the source, and the second drain.
[0022] In an embodiment of the disclosure, the manufacturing method
of light emitting diode package structure further includes forming
a first reconfiguration circuit layer on the insulating layer after
forming the insulating layer and before providing the multiple
light emitting diodes. The multiple light emitting diodes are
electrically connected to the first drain of the first active
element through the first reconfiguration circuit layer.
[0023] In an embodiment of the disclosure, the manufacturing method
of light emitting diode package structure further includes forming
a second reconfiguration circuit layer on the lower surface of the
glass substrate. The second reconfiguration circuit layer includes
at least one reconfiguration circuit, multiple conductive holes,
and the multiple pads. The multiple conductive holes connect the at
least one reconfiguration circuit and the multiple conductive
through holes and connect the at least one reconfiguration circuit
and the multiple pads. The second gate of the second active element
and the source are electrically connected to the multiple pads of
the second reconfiguration circuit layer through the multiple
conductive through holes.
[0024] In an embodiment of the disclosure, the manufacturing method
of light emitting diode package structure further includes
embedding a passive element in the second reconfiguration circuit
layer. The multiple conductive through holes connecting the first
gate of the first active element and connecting the second drain of
the second active element are electrically connected to the passive
element.
[0025] A manufacturing method of display device includes the
following steps. A carrier board is provided. A light emitting
diode package structure is provided. The light emitting diode
package structure includes a glass substrate, multiple conductive
through holes, multiple active elements, an insulating layer,
multiple light emitting diodes, and multiple pads. The glass
substrate has an upper surface and a lower surface opposite to each
other. Multiple conductive through holes penetrate the glass
substrate and connect the upper surface and the lower surface.
Multiple active elements are disposed on the upper surface of the
glass substrate and electrically connected to the multiple
conductive through holes. An insulating layer is disposed on the
upper surface of the glass substrate and covers the multiple active
elements. Multiple light emitting diodes are disposed on the
insulating layer and electrically connected to at least one of the
multiple active elements. Multiple pads are disposed on the lower
surface of the glass substrate and electrically connected to the
multiple conductive through holes. A source of the at least one of
the multiple active elements is electrically connected to at least
one of the multiple corresponding pads directly through the
corresponding conductive through hole. Multiple independent light
emitting diode package units are formed by singulating the light
emitting diode package structure. The multiple light emitting diode
package units are assembled on the carrier board so as to form a
display device, where each of the multiple light emitting diode
package units is directly electrically connected to the carrier
board through the multiple pads.
[0026] In an embodiment of the disclosure, the number of the
multiple light emitting diodes in each of the multiple light
emitting diode package units is three. The multiple light emitting
diodes are a red micro light emitting diode, a green micro light
emitting diode, and a blue micro light emitting diode.
[0027] Based on the above, in the light emitting diode package
structure and manufacturing method thereof according to the
disclosure, the multiple conductive through holes penetrate the
glass substrate and electrically connect the multiple active
elements on the upper surface and the multiple pads on the lower
surface, where the source of at least one of the multiple active
elements is electrically connected to the multiple corresponding
pads directly through the corresponding conductive through hole,
and the multiple light emitting diodes are electrically connected
to the multiple active elements. In this way, the multiple
independent light emitting diode package units are formed having
the multiple pads by subsequently singulating the light emitting
diode package structure. Also, each of the multiple light emitting
diode package units is directly electrically connected to the
carrier board through the multiple pads, so as to complete the
manufacturing of the display device. Compared with the conventional
technology in which a large-sized thin-film transistor substrate
and the micro light emitting diodes transferred thereon by mass
transfer are spliced onto the circuit board, in the disclosure, the
singulated small-sized light emitting diode package unit is spliced
to the carrier board, therefore there is no problem of substrate
warping. In addition, if there is damage and need to be repaired,
the damaged light emitting diode package unit can be directly
replaced with a good light emitting diode package unit, which is a
relatively simple process, and the manufacturing cost can be
reduced.
BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The accompanying drawings are included to provide a further
understanding of the disclosure, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the disclosure and, together with the description,
serve to explain the principles of the disclosure.
[0029] FIG. 1A to FIG. 1I are schematic cross-sectional diagrams of
a manufacturing method of light emitting diode package structure
according to an embodiment of the disclosure.
[0030] FIG. 2A and FIG. 2B are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to another embodiment of the
disclosure.
[0031] FIG. 2C and FIG. 2D are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to yet another embodiment of the
disclosure.
[0032] FIG. 2E and FIG. 2F are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to still another embodiment of the
disclosure.
[0033] FIG. 2G is a schematic cross-sectional diagram of a light
emitting diode package structure according to yet still another
embodiment of the disclosure.
[0034] FIG. 3A to FIG. 3D are cross-sectional diagrams of a
manufacturing method of display device according to an embodiment
of the disclosure.
DESCRIPTION OF THE EMBODIMENTS
[0035] Reference will now be made in detail to the exemplary
embodiments of the disclosure, examples of which are illustrated in
the accompanying drawings.
[0036] FIG. 1A to FIG. 1I are cross-sectional diagrams of a
manufacturing method of light emitting diode package structure
according to an embodiment of the disclosure. Please refer to FIG.
1A for the manufacturing method of light emitting diode package
structure of the present embodiment. First, a glass substrate 110
is provided. The glass substrate 110 has an upper surface 111 and a
lower surface 113 opposite to each other. Here, the glass substrate
110 further has multiple through holes T, where the through holes T
penetrate the glass substrate 110 and connect the upper surface 111
and the lower surface 113.
[0037] Next, with reference to FIG. 1B, conductive material is
electroplated on the multiple through holes T to form multiple
conductive through holes 120 penetrating through the glass
substrate 110, where the conductive through holes 120 connect the
upper surface 111 and the lower surface 113 of the glass substrate
110.
[0038] Next, referring to FIG. 1F, multiple active elements E are
formed on the upper surface 111 of the glass substrate 110, where
the active elements E are electrically connected to the conductive
through holes 120. Specifically, for steps of forming of the active
element E, referring to FIG. 1C, first a gate G and a source S are
formed on the upper surface 111 of the glass substrate 110, where
the gate G and the source S belong to the same layer. When forming
the gate G and the source S, multiple pads 132 and multiple pads
134 are formed on the lower surface 113 of the glass substrate 110
at the same time, where the pads 132 and the pads 134 are
electrically connected to the conductive through holes 120,
respectively. Here, the pads 132 and the pads 134 are electrically
connected to the source S and the gate G of each active element E
(referring to FIG. 1F) through the conductive through holes
120.
[0039] Next, referring to FIG. 1D, a gate insulating layer I is
formed on the upper surface 111 of the glass substrate 110, where
the gate insulating layer I covers the gate G and part of the upper
surface 111. Next, referring to FIG. 1E, an active layer A is
formed on the upper surface 111 of the glass substrate 110, where
the active layer A covers the gate insulating layer I, part of the
source S, and part of the upper surface 111. Next, referring to
FIG. 1F, a drain D is formed on the active layer A. So far, the
manufacturing of the active elements E has been completed, where
the active element E is, for example, a thin film transistor.
[0040] Next, referring to FIG. 1G, an insulating layer 140 is
formed on the upper surface 111 of the glass substrate 110, where
the insulating layer 140 covers the active elements E and the upper
surface 111 of the glass substrate 110.
[0041] After that, referring to FIG. 1H, a patterned circuit layer
152 and multiple conductive holes 154 are formed, where the
patterned circuit layer 152 is disposed on the insulating layer
140, and the conductive holes 154 are disposed in the insulating
layer 140 and electrically connect the patterned circuit layer 152
and the drain D of each active element E.
[0042] Finally, referring to FIG. 1I, a light emitting diode 160a,
a light emitting diode 160b, and a light emitting diode 160c are
bonded on the insulating layer 140 by mass transfer, where the
light emitting diode 160a is electrically connected to the
patterned circuit layer 152 through a pad 162a and a pad 164a, the
light emitting diode 160b is electrically connected to the
patterned circuit layer 152 through a pad 162b and a pad 164b, and
the light emitting diode 160c is electrically connected to the
patterned circuit layer 152 through a pad 162c and a pad 64c. Here,
the light emitting diode 160a, the light emitting diode 160b, and
the light emitting diode 160c are electrically connected to the
drain D of the active element E through the pad 162a, the pad 162b,
the pad 162c, and the conductive holes 154, respectively. That is,
the light emitting diode 160a, the light emitting diode 160b, and
the light emitting diode 160c are electrically connected to the
active elements E through the patterned circuit layer 152 and the
conductive holes 154, respectively. Further, the pad 164a, the pad
164b, and the pad 164c of the light emitting diode 160a, the light
emitting diode 160b, and the light emitting diode 160c are also
electrically connected to pads (not shown due to different
cross-section) formed on the lower surface 113 of the glass
substrate 110 to output signals. Preferably, the light emitting
diode 160a, the light emitting diode 160b, and the light emitting
diode 160c are, for example, respectively, a red micro light
emitting diode, a green micro light emitting diode, and a blue
micro light emitting diode, but the disclosure is not limited
thereto. So far, the manufacturing of light emitting diode package
structure 100a has been completed.
[0043] In terms of structure, referring to FIG. 1I, the light
emitting diode package structure 100a includes the glass substrate
110, the conductive through holes 120, the active elements E, the
insulating layer 140, the light emitting diode 160a, the light
emitting diode 160b, the light emitting diode 160c, the pads 132,
and the pads 134. The glass substrate 110 has the upper surface 111
and the lower surface 113 opposite to each other. The conductive
through holes 120 penetrate the glass substrate 110 and connect the
upper surface 111 and the lower surface 113. The active elements E
are disposed on the upper surface 111 of the glass substrate 110
and are electrically connected to the conductive through holes 120.
The insulating layer 140 is disposed on the upper surface 111 of
the glass substrate 110, and covers the active elements E. The
light emitting diode 160a, the light emitting diode 160b, and the
light emitting diode 160c are disposed on the insulating layer 140
and electrically connected to the active elements E, respectively.
The pads 132 and the pads 134 are disposed on the lower surface 113
of the glass substrate 110 and electrically connected to the
conductive through holes 120. The source S of the active element E
is electrically connected to the corresponding pad 132 directly
through the corresponding conductive through hole 120.
[0044] More specifically, each active element E includes the gate
G, the source S, the gate insulating layer I, the active layer A,
and the drain D. The gate G is disposed on the upper surface 111 of
the glass substrate 110. The source S is formed on the upper
surface 111 of the glass substrate 110, where the gate G and the
source S belong to a same layer. The gate insulating layer I is
disposed on the upper surface 111 of the glass substrate 110 and
covers the gate G. The active layer A is disposed on the upper
surface 111 of the glass substrate 110 and covers the gate
insulating layer I and part of the source S. The drain D is formed
on the active layer A, where the light emitting diode 160a, the
light emitting diode 160b, and the light emitting diode 160c are
electrically connected to the drain D in each active element E,
respectively. It should be noted that the way in which the active
elements E and the light emitting diodes 160a, the light emitting
diode 160b, and the light emitting diode 160c are electrically
connected depends on the polarity of the active element E. Here,
the active element E is embodied as a
[0045] P-type thin film transistor, which is electrically connected
to the light emitting diode 160a, the light emitting diode 160b,
and the light emitting diode 160c through the drain D. In another
embodiment not shown, the active element may also be an N-type thin
film transistor, which may be electrically connected to the light
emitting diode through the source, which still falls within the
scope of the protection intended by the disclosure. The pads 132
and the pads 134 are electrically connected to the source S and the
gate G of each active element E through the conductive through
holes 120, respectively.
[0046] Moreover, the light emitting diode package structure 100a of
the present embodiment further includes the patterned circuit layer
152 and the conductive holes 154. The patterned circuit layer 152
is disposed on the insulating layer 140. The conductive holes 154
are disposed in the insulating layer 140 and electrically connect
the patterned circuit layer 152 and the drain D of each active
element E. The light emitting diode 160a, the light emitting diode
160b, and the light emitting diode 160c are electrically connected
to the active elements E through the patterned circuit layer 152
and the conductive holes 154, respectively.
[0047] In short, according to the present embodiment, the active
element E (i.e. driver circuit) is made on the glass substrate 110
having conductive through holes 120, then the light emitting diode
160a, the light emitting diode 160b, and the light emitting diode
160c are bonded to the active elements E, such that each active
element E may control the light emitting diode 160a, light emitting
diode 160b, and light emitting diode 160c each having single color,
where the source S of the active element E is electrically
connected to the corresponding pad 132 directly through the
corresponding conductive through hole 120. Since the light emitting
diode package structure 100a of the present embodiment has the pads
132 and the pads 134 on the lower surface 113 of the glass
substrate 110, so in subsequent applications, it can be directly
soldered to other external circuits or of other electronic
components through the pads 132 and the pads 134 located under the
glass substrate 110.
[0048] It must be noted here that the following embodiment uses the
component number and part of the content of the aforementioned
embodiment, where the same number is used to represent the same or
similar components, and the description of the same technique
content is omitted. For the omitted description, please refer to
the aforementioned embodiment, which will not be repeated in the
following embodiments.
[0049] FIG. 2A and FIG. 2B are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to another embodiment of the disclosure.
First refer to both FIG. 1I and FIG. 2A. The light emitting diode
package structure 100b1 of the present embodiment is similar to the
above-mentioned light emitting diode package structure 100a. The
difference of the two lies in: in the present embodiment, the light
emitting diode package structure 100b1 further includes a
reconfiguration circuit layer 170a, disposed on the lower surface
113 of the glass substrate 110 and including at least one
reconfiguration circuit (a reconfiguration circuit 172 is
schematically shown), multiple conductive holes 174, multiple pads
178a1, a pad 178a2, and a pad 178a3. The conductive holes 174
connect the reconfiguration circuit 172 and the pads 178a1. The
gate G of each active element E is electrically connected to the
pads 178a1 of the reconfiguration circuit layer 170a through the
conductive through hole 120 and the conductive hole 174. Referring
FIG. 2B, here the pad 178a1 is, for example, a scan line/data line
pad, the pad 178a2 is, for example, a ground line pad (i.e. a
common source), and the pad 178a3 is, for example, a power line pad
(i.e. a common drain).
[0050] In short, in the present embodiment, the reconfiguration
circuit layer 170a is formed on the lower surface 113 of the glass
substrate 110 so as to connect the gate G, the source S, and the
drain D of the active element E, which can be used in a control
system in which a common cathode and a common anode coexist.
Further, with such design, it is possible to input signals to the
gate G of the active element E connected to the light emitting
diode 160a, the light emitting diode 160b, and the light emitting
diode 160c by connecting external control components, so as to
adjust and control the current supplied to the light emitting diode
160a, the light emitting diode 160b, and the light emitting diode
160c, such that the light emitting diode 160a, the light emitting
diode 160b, and the light emitting diode 160c have functions such
as on-off switching, thereby achieving the display function.
[0051] FIG. 2C and FIG. 2D are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to yet another embodiment of the
disclosure. First please refer to FIG. 1I and FIG. 2C at the same
time. A light emitting diode package structure 100b2 of the present
embodiment is similar to the above-mentioned light emitting diode
package structure 100a. The difference between the two lies in: in
the present embodiment, the light emitting diode package structure
100b 2 further includes a reconfiguration circuit layer 170b,
disposed on the lower surface3 of the glass substrate 110 and
including at least one reconfiguration circuit (a reconfiguration
circuit 172 is schematically shown), the multiple conductive holes
174, a conductive hole 176, a pad 178b1, a pad 178b3, a pad 178b5,
a pad 178b6, and a pad 178b7. The conductive holes 174 connect the
reconfiguration circuit 172 and the conductive through holes 120,
and the conductive hole 176 connects the reconfiguration circuit
172 and the pad 178b1. The gate G of each active element
[0052] E is electrically connected to the pad 178b1 of the
reconfiguration circuit layer 170b through the conductive through
hole 120 and the conductive hole 174. Referring FIG. 2D, here the
pad 178b1 is, for example, a scan line/data line pad (i.e. a common
gate), the pad 178b3 is, for example, a power line pad (i.e. a
common drain), and the pad 178b5, the pad 178b6, and the pad 178b7
are respectively input terminals of the light emitting diode 160a,
the light emitting diode 160b, and the light emitting diode
160c.
[0053] In short, in the present embodiment, the reconfiguration
circuit layer 170b is formed on the lower surface 113 of the glass
substrate 110 so as to connect the gate G, the source S, and the
drain D of the active element E. Such design is a common cathode
control system. For anode part, the signal is input by three
terminals (i.e. the pad 178b5, the pad 178b6, and the pad
178b7).
[0054] With different external voltage supplies, the on-off
switching of the light emitting diode 160a, the light emitting
diode 160b, and the light emitting diode 160c can be controlled to
achieve the display function.
[0055] FIG. 2E and FIG. 2F are schematic cross-sectional diagrams
of a light emitting diode package structure and a schematic circuit
diagram thereof according to still another embodiment of the
disclosure. First please refer to FIG. 1I and FIG. 2F at the same
time. A light emitting diode package structure 100b3 of the present
embodiment is similar to the above-mentioned light emitting diode
package structure 100a. The difference between the two lies in: in
the present embodiment, the light emitting diode package structure
100b3 further includes a reconfiguration circuit layer 170c,
disposed on the lower surface 113 of the glass substrate 110 and
including at least one reconfiguration circuit (a reconfiguration
circuit 172 is schematically shown), the multiple conductive holes
174, the conductive hole 176, a pad 178c1, a pad 178c2, a pad
178c5, a pad 178c6, and a pad 178c7. The conductive holes 174
connect the reconfiguration circuit 172 and the conductive through
holes 120, and the conductive hole 176 connects the reconfiguration
circuit 172 and the pad 178c1. The gate G of each active element E
is electrically connected to the pad 178c1 of the reconfiguration
circuit layer 170c through the conductive through hole 120 and the
conductive hole 174. Referring FIG. 2F, here the pad 178c1 is, for
example, a scan line/data line pad (i.e. a common gate), the pad
178c2 is, for example, a ground line pad (i.e. a common source),
and the pad 178c5, the pad 178c6, and the pad 178c7 are
respectively output terminals of the light emitting diode 160a, the
light emitting diode 160b, and the light emitting diode 160c.
[0056] In short, in the present embodiment, the reconfiguration
circuit layer 170c is formed on the lower surface 113 of the glass
substrate 110 so as to connect the gate G, the source S, and the
drain D of the active element E. Such design is a common anode
control system, in which the external voltage is supplied to the
anode. For cathode part, the signal is input by three terminals
(i.e. the pad 178c5, the pad 178c6, and the pad 178c7). The rear
terminal of the cathode is connected in series with resistors; by
switching the resistors to control partial voltage, the light
emitting diode 160a, the light emitting diode 160b, and the light
emitting diode 160c have functions such as on/off switching,
respectively, so as to achieve the display function.
[0057] FIG. 2G is a schematic cross-sectional diagram of a light
emitting diode package structure according to yet still another
embodiment of the disclosure. First please refer to FIG. 1I and
FIG. 2G at the same time. A light emitting diode package structure
100c of the present embodiment is similar to the above-mentioned
light emitting diode package structure 100a. The difference between
the two lies in: in an embodiment of the disclosure, the active
elements include a first active element E1 and a second active
element E2. The first active element E1 includes a first gate G1, a
first source S1, a first active layer A1, a first gate insulating
layer I1, and a first drain D1. The first gate G1, the first source
S1, the first active layer A1, and the first gate insulating layer
I1 are disposed on the upper surface 111 of the glass substrate
110. The first gate G1 and the first source S1 belong to a same
layer. The first gate insulating layer I1 covers the first gate G1,
the first active layer A1 covers the first gate insulating layer I1
and part of the first source S1, and the first drain D1 is disposed
on the first active layer A1.
[0058] Moreover, the second active element E2 includes a second
gate G2, a source S2, a second active layer A2, a second gate
insulating layer 12, and a second drain D2. The second gate G2, the
source S2, the second active layer A2, the second gate insulating
layer 12, and the second drain D2 are disposed on the upper surface
111 of the glass substrate 110. The second gate G2, the source S2,
and the second drain D2 belong to a same layer. The second gate
insulating layer 12 covers the second gate G2, and the second
active layer A2 covers the second gate insulating layer 12, part of
the source S2, and part of the second drain D2. The conductive
through holes 120 are electrically connected to the first gate G1
of the first active element El, the second gate G2 of the second
active element E2, the source S2, and the second drain D2.
[0059] Then, referring to both FIG. 1G and FIG. 2G, a first
reconfiguration circuit layer 180 is formed on the insulating layer
140 after forming the insulating layer 140 and before providing the
light emitting diode 160a, the light emitting diode 160b, and the
light emitting diode 160c. The first reconfiguration circuit layer
180 includes multiple reconfiguration circuits 182 and a first
reconfiguration circuit 184 and multiple conductive holes 186 and a
conductive hole 188, where the conductive holes 186 electrically
connect the reconfiguration circuits 182 and the first
reconfiguration circuit 184, and the conductive hole 188
electrically connects the reconfiguration circuits 182 and the
first drain D1 of the first active element E1. That is, the light
emitting diode 160a, the light emitting diode 160b, and the light
emitting diode 160c are electrically connected to the first drain
D1 of the first active element E1 through the first reconfiguration
circuit layer 180. In other words, the light emitting diode 160a,
the light emitting diode 160b, and the light emitting diode 160c
are electrically connected to at least one of the multiple active
elements E.
[0060] Moreover, the light emitting diode package structure 100c of
the disclosure further includes forming a second reconfiguration
circuit layer 190 on the lower surface 113 of the glass substrate
110. The second reconfiguration circuit layer 190 includes at least
one reconfiguration circuit 192, multiple conductive holes 194,
multiple conductive holes 196, a pad 198a, a pad 198b, and a pad
198c. The conductive holes 194 connect the reconfiguration circuit
192 and the conductive through holes 120, and the conductive holes
196 connect the reconfiguration circuit 192 and the pad 198a, 198b.
The second gate G2 and the source S2 of the second active element
E2 are electrically connected to the pad 198a and the pad 198b of
the second reconfiguration circuit layer 190 through the conductive
through holes 120. In other words, in the present embodiment, the
source S2 of at least one active element (i.e. the second active
element E2) is electrically connected to the corresponding pad 198a
directly through the corresponding conductive through hole 120.
Here, the pad 198a is, for example, a scan line/data line pad, the
pad 198b is, for example, a ground line pad, and the pad 198c is,
for example, a power line pad.
[0061] Furthermore, the light emitting diode package structure 100c
of the present embodiment further includes a passive element 195
embedded in the second reconfiguration circuit layer 190, where the
passive element 195 is, for example, a capacitance, but the
disclosure is not limited thereto. The conductive through holes 120
connecting the first gate G1 of the first active element El and
connecting the second drain D2 of the second active element E2 are
electrically connected to the passive element 195.
[0062] In short, in the present embodiment, two active elements
(i.e. the first active element El and the second active element E2)
and a passive element 195 are configured as the driver circuit on
the glass substrate 110 so as to simultaneously control the three
light emitting diode 160a, the light emitting diode 160b, and the
light emitting diode 160c, namely the color of a pixel. Of course,
in other embodiments not shown, the number of active elements and
the number of passive elements may be adjusted according to
requirements, for example, five active elements with two passive
elements, which still falls within the scope of the protection
intended by the disclosure.
[0063] FIG. 3A to FIG. 3D are a cross-sectional diagrams of a
manufacturing method of display device according to an embodiment
of the disclosure, where FIG. 1I is a partial cross-sectional
diagram of FIG. 3A. First, referring to FIG. 1I and FIG. 3A, the
light emitting diode 160a, the light emitting diode 160b, and the
light emitting diode 160c are bonded on the glass substrate 110
after manufacturing the light emitting diode package structure
100a. Next, referring to FIG. 3B, the light emitting diode package
structure 100a is singulated so as to form multiple independent
light emitting diode package units U. Here, the number of light
emitting diode 160a, the light emitting diode 160b, and the light
emitting diode 160c in each light emitting diode package unit U is
three, where the light emitting diode 160a, the light emitting
diode 160b, and the light emitting diode 160c are respectively a
red light emitting diode, a green light emitting diode, and a blue
light emitting diode. Next, the singulated small-sized light
emitting diode package unit U is inspected so as to pass the yield
verification. Then, referring to FIG. 3C and FIG. 3D, a carrier
board P is provided, and the light emitting diode package units U
having passed the yield verification are assembled on the carrier
board P so as to form a display device 200, where each light
emitting diode package unit U is directly electrically connected to
the carrier board P through the pads 132 and the pads 134 (see FIG.
1I). Here, the carrier board P is, for example, a large-sized logic
circuit board, but the disclosure is not limited thereto. So far,
the manufacturing of the display device 200 has been completed.
[0064] In short, in the present embodiment, a small-sized light
emitting diode package unit U with the pads 132 and the pads 134 is
formed by first singulating the light emitting diode package
structure 100a. Then, according to the required dimension, a
certain number of light emitting diode package unit U having passed
yield verification are directly electrically connected to the
carrier board P through the pads 132 and the pads 134, so as to
complete the manufacturing of the final display device 200.
Compared with the conventional technology in which a large-sized
thin-film transistor substrate and the micro light emitting diodes
transferred thereon by means of mass transfer are spliced onto the
circuit board, in the present embodiment, the singulated
small-sized light emitting diode package unit U is spliced onto the
carrier board P, therefore there is no problem of substrate
warping, and the splicing yield can be improved. In addition, if
there is damage and need to be repaired, the damaged light emitting
diode package unit U can be directly replaced with a good light
emitting diode package unit U, which is a relatively simple
process, and the manufacturing cost can be reduced.
[0065] In summary, in the light emitting diode package structure
and manufacturing method thereof according to the disclosure, the
multiple conductive through holes penetrate the glass substrate and
are electrically connect the multiple active elements on the upper
surface and the multiple pads on the lower surface, where the
source of at least one of the multiple active element is
electrically connected to the multiple corresponding pads through
the multiple corresponding conductive directly through hole, and
the multiple light emitting diodes are electrically connected to
the multiple active elements. In this way, the multiple independent
light emitting diode package units are formed having the multiple
pads by subsequently singulating the light emitting diode package
structure. Also, each of the multiple light emitting diode package
units can be directly electrically connected to the carrier board
through the multiple pads, so as to complete the manufacturing of
the display device. Compared with the conventional technology in
which a large-sized thin-film transistor substrate and the micro
light emitting diodes transferred thereon by means of mass transfer
are spliced onto the circuit board, in the disclosure, the
singulated small-sized light emitting diode package unit is spliced
onto the carrier board, therefore there is no problem of substrate
warping. In addition, if there is damage and need to be repaired,
the damaged light emitting diode package unit can be directly
replaced with a good light emitting diode package unit, which is a
relatively simple process, and the manufacturing cost can be
reduced.
[0066] It will be apparent to those skilled in the art that various
modifications and variations can be made to the structure of the
disclosure without departing from the scope or spirit of the
disclosure. In view of the foregoing, it is intended that the
disclosure cover modifications and variations of this disclosure
provided they fall within the scope of the following claims and
their equivalents.
* * * * *