U.S. patent application number 17/727571 was filed with the patent office on 2022-08-04 for hybrid wafer dicing approach using an actively-focused laser beam laser scribing process and plasma etch process.
The applicant listed for this patent is Applied Materials, Inc.. Invention is credited to Karthik Balakrishnan, Jungrae Park, Eng Sheng Peh, Sriskantharajah Thirunavukarasu.
Application Number | 20220246476 17/727571 |
Document ID | / |
Family ID | |
Filed Date | 2022-08-04 |
United States Patent
Application |
20220246476 |
Kind Code |
A1 |
Balakrishnan; Karthik ; et
al. |
August 4, 2022 |
HYBRID WAFER DICING APPROACH USING AN ACTIVELY-FOCUSED LASER BEAM
LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS
Abstract
Methods of dicing semiconductor wafers, each wafer having a
plurality of integrated circuits, are described. In an example, a
method of dicing a semiconductor wafer having a plurality of
integrated circuits involves forming a mask above the semiconductor
wafer, the mask composed of a layer covering and protecting the
integrated circuits. The mask is then patterned with an
actively-focused laser beam laser scribing process to provide a
patterned mask with gaps, exposing regions of the semiconductor
wafer between the integrated circuits. The semiconductor wafer is
then plasma etched through the gaps in the patterned mask to
singulate the integrated circuits.
Inventors: |
Balakrishnan; Karthik;
(Singapore, SG) ; Park; Jungrae; (Santa Clara,
CA) ; Thirunavukarasu; Sriskantharajah; (Singapore,
SG) ; Peh; Eng Sheng; (Singapore, SG) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Applied Materials, Inc. |
Santa Clara |
CA |
US |
|
|
Appl. No.: |
17/727571 |
Filed: |
April 22, 2022 |
Related U.S. Patent Documents
|
|
|
|
|
|
Application
Number |
Filing Date |
Patent Number |
|
|
16539828 |
Aug 13, 2019 |
11342226 |
|
|
17727571 |
|
|
|
|
International
Class: |
H01L 21/78 20060101
H01L021/78; H01L 21/3065 20060101 H01L021/3065; B23K 26/53 20060101
B23K026/53; H01L 21/67 20060101 H01L021/67; H01L 21/308 20060101
H01L021/308 |
Claims
1. A system for dicing a semiconductor wafer comprising a plurality
of integrated circuits, the system comprising: a factory interface;
a laser scribe apparatus coupled with the factory interface and
comprising a laser assembly configured to provide an
actively-focused laser beam; and a plasma etch chamber coupled with
the factory interface.
2. The system of claim 1, wherein the laser assembly is configured
to provide the actively-focused laser beam at a lowered position
over a trough position of a semiconductor wafer.
3. The system of claim 1, wherein the laser assembly is configured
to provide the actively-focused laser beam at a raised position
over a crest position of a semiconductor wafer.
4. The system of claim 1, wherein the laser scribe apparatus is
configured to pre-map a topography of a semiconductor wafer or a
topography of a chuck for supporting a semiconductor wafer, or
both.
5. The system of claim 1, wherein the laser assembly comprises a
Gaussian source laser beam.
6. The system of claim 1, wherein the laser assembly comprises a
femto-second source laser beam.
7. A system for dicing a semiconductor wafer comprising a plurality
of integrated circuits, the system comprising: a deposition chamber
for forming a mask above the semiconductor wafer, the mask
comprising a layer covering and protecting the integrated circuits,
and the semiconductor wafer having a top surface; a camera for
pre-mapping a topography of an entirety of the semiconductor wafer
in regions between the integrated circuits; a laser assembly for,
subsequent to pre-mapping the entirety of the semiconductor wafer,
patterning the mask with an actively-focused laser beam laser
scribing process to provide a patterned mask with gaps, exposing
the regions of the semiconductor wafer between the integrated
circuits, wherein the actively-focused laser beam laser scribing
process comprises moving laser optics along a vertical direction
relative to the top surface of the semiconductor wafer to
compensate for variations in the pre-map topography; and a plasma
etch chamber for plasma etching the semiconductor wafer through the
gaps in the patterned mask to singulate the integrated
circuits.
8. The system of claim 7, wherein the laser assembly is configured
to provide an actively-focused laser beam at a lowered position
over a trough position of a semiconductor wafer.
9. The system of claim 7, wherein the laser assembly is configured
to provide an actively-focused laser beam at a raised position over
a crest position of a semiconductor wafer.
10. The system of claim 7, wherein the laser assembly comprises a
Gaussian source laser beam.
11. The system of claim 7, wherein the laser assembly comprises a
femto-second source laser beam.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of U.S. patent application
Ser. No. 16/539,828, filed on Aug. 13, 2019, the entire contents of
which are hereby incorporated by reference herein.
BACKGROUND
1) Field
[0002] Embodiments of the present disclosure pertain to the field
of semiconductor processing and, in particular, to methods of
dicing semiconductor wafers, each wafer having a plurality of
integrated circuits thereon.
2) Description of Related Art
[0003] In semiconductor wafer processing, integrated circuits are
formed on a wafer (also referred to as a substrate) composed of
silicon or other semiconductor material. In general, layers of
various materials which are either semiconducting, conducting or
insulating are utilized to form the integrated circuits. These
materials are doped, deposited and etched using various well-known
processes to form integrated circuits. Each wafer is processed to
form a large number of individual regions containing integrated
circuits known as dice.
[0004] Following the integrated circuit formation process, the
wafer is "diced" to separate the individual die from one another
for packaging or for use in an unpackaged form within larger
circuits. The two main techniques that are used for wafer dicing
are scribing and sawing. With scribing, a diamond tipped scribe is
moved across the wafer surface along pre-formed scribe lines. These
scribe lines extend along the spaces between the dice. These spaces
are commonly referred to as "streets." The diamond scribe forms
shallow scratches in the wafer surface along the streets. Upon the
application of pressure, such as with a roller, the wafer separates
along the scribe lines. The breaks in the wafer follow the crystal
lattice structure of the wafer substrate. Scribing can be used for
wafers that are about 10 mils (thousandths of an inch) or less in
thickness. For thicker wafers, sawing is presently the preferred
method for dicing.
[0005] With sawing, a diamond tipped saw rotating at high
revolutions per minute contacts the wafer surface and saws the
wafer along the streets. The wafer is mounted on a supporting
member such as an adhesive film stretched across a film frame and
the saw is repeatedly applied to both the vertical and horizontal
streets. One problem with either scribing or sawing is that chips
and gouges can form along the severed edges of the dice. In
addition, cracks can form and propagate from the edges of the dice
into the substrate and render the integrated circuit inoperative.
Chipping and cracking are particularly a problem with scribing
because only one side of a square or rectangular die can be scribed
in the <110> direction of the crystalline structure.
Consequently, cleaving of the other side of the die results in a
jagged separation line. Because of chipping and cracking,
additional spacing is required between the dice on the wafer to
prevent damage to the integrated circuits, e.g., the chips and
cracks are maintained at a distance from the actual integrated
circuits. As a result of the spacing requirements, not as many dice
can be formed on a standard sized wafer and wafer real estate that
could otherwise be used for circuitry is wasted. The use of a saw
exacerbates the waste of real estate on a semiconductor wafer. The
blade of the saw is approximate 15 microns thick. As such, to
insure that cracking and other damage surrounding the cut made by
the saw does not harm the integrated circuits, three to five
hundred microns often must separate the circuitry of each of the
dice. Furthermore, after cutting, each die requires substantial
cleaning to remove particles and other contaminants that result
from the sawing process.
[0006] Plasma dicing has also been used, but may have limitations
as well. For example, one limitation hampering implementation of
plasma dicing may be cost. A standard lithography operation for
patterning resist may render implementation cost prohibitive.
Another limitation possibly hampering implementation of plasma
dicing is that plasma processing of commonly encountered metals
(e.g., copper) in dicing along streets can create production issues
or throughput limits.
SUMMARY
[0007] Embodiments of the present disclosure include methods of,
and apparatuses for, dicing semiconductor wafers.
[0008] In an embodiment, a method of dicing a semiconductor wafer
having a plurality of integrated circuits involves forming a mask
above the semiconductor wafer, the mask composed of a layer
covering and protecting the integrated circuits. The mask is then
patterned with an actively-focused laser beam laser scribing
process to provide a patterned mask with gaps, exposing regions of
the semiconductor wafer between the integrated circuits. The
semiconductor wafer is then plasma etched through the gaps in the
patterned mask to singulate the integrated circuits.
[0009] In another embodiment, a method of dicing a semiconductor
wafer including a plurality of integrated circuits involves laser
scribing the semiconductor wafer with an actively-focused laser
beam laser scribing process to singulate the integrated
circuits.
[0010] In another embodiment, a system for dicing a semiconductor
wafer having a plurality of integrated circuits includes a factory
interface. The system also includes a laser scribe apparatus
coupled with the factory interface and having a laser assembly
configured to provide an actively-focused laser beam. The system
also includes a plasma etch chamber coupled with the factory
interface.
BRIEF DESCRIPTION OF THE DRAWINGS
[0011] FIG. 1 is a Flowchart representing operations in a method of
dicing a semiconductor wafer including a plurality of integrated
circuits, in accordance with an embodiment of the present
disclosure.
[0012] FIG. 2A illustrates a cross-sectional view of a
semiconductor wafer including a plurality of integrated circuits
during performing of a method of dicing the semiconductor wafer,
corresponding to operation 102 of the Flowchart of FIG. 1, in
accordance with an embodiment of the present disclosure.
[0013] FIG. 2B illustrates a cross-sectional view of a
semiconductor wafer including a plurality of integrated circuits
during performing of a method of dicing the semiconductor wafer,
corresponding to operation 104 of the Flowchart of FIG. 1, in
accordance with an embodiment of the present disclosure.
[0014] FIG. 2C illustrates a cross-sectional view of a
semiconductor wafer including a plurality of integrated circuits
during performing of a method of dicing the semiconductor wafer,
corresponding to operation 108 of the Flowchart of FIG. 1, in
accordance with an embodiment of the present disclosure.
[0015] FIG. 3 illustrates a cross-sectional view of a
non-actively-focused laser beam laser scribing process.
[0016] FIG. 4 illustrates a cross-sectional view of an
actively-focused laser beam laser scribing process, in accordance
with an embodiment of the present disclosure.
[0017] FIG. 5 illustrates the effects of using a laser pulse width
in the femtosecond range, picoseconds range, and nanosecond range,
in accordance with an embodiment of the present disclosure.
[0018] FIG. 6 illustrates a cross-sectional view of a stack of
materials that may be used in a street region of a semiconductor
wafer or substrate, in accordance with an embodiment of the present
disclosure.
[0019] FIGS. 7A-7D illustrate cross-sectional views of various
operations in a method of dicing a semiconductor wafer, in
accordance with an embodiment of the present disclosure.
[0020] FIG. 8 illustrates a block diagram of a tool layout for
laser and plasma dicing of wafers or substrates, in accordance with
an embodiment of the present disclosure.
[0021] FIG. 9 illustrates a block diagram of an exemplary computer
system, in accordance with an embodiment of the present
disclosure.
DETAILED DESCRIPTION
[0022] Methods of dicing semiconductor wafers, each wafer having a
plurality of integrated circuits thereon, are described. In the
following description, numerous specific details are set forth,
such as actively-focused laser beam laser scribing approaches and
plasma etching conditions and material regimes, in order to provide
a thorough understanding of embodiments of the present disclosure.
It will be apparent to one skilled in the art that embodiments of
the present disclosure may be practiced without these specific
details. In other instances, well-known aspects, such as integrated
circuit fabrication, are not described in detail in order to not
unnecessarily obscure embodiments of the present disclosure.
Furthermore, it is to be understood that the various embodiments
shown in the Figures are illustrative representations and are not
necessarily drawn to scale.
[0023] A hybrid wafer or substrate dicing process involving an
initial laser scribe and subsequent plasma etch may be implemented
for die singulation. The laser scribe process may be used to
cleanly remove a mask layer, organic and inorganic dielectric
layers, and device layers. The laser etch process may then be
terminated upon exposure of, or partial etch of, the wafer or
substrate. The plasma etch portion of the dicing process may then
be employed to etch through the bulk of the wafer or substrate,
such as through bulk single crystalline silicon, to yield die or
chip singulation or dicing. More specifically, one or more
embodiments are directed to implementing an actively-focused laser
beam laser scribing process for, e.g., dicing applications.
[0024] Actively-focused laser beams for wafer dicing using a hybrid
laser scribing and plasma etch approach are described. Embodiments
described herein may be implemented to provide active laser beam
focus control to compensate for chuck variations in a laser dicing
process. Embodiments described herein may be implemented to provide
active laser beam focus control to compensate for substrate
thickness variations in a laser dicing process. Embodiments may be
implemented for active laser beam focus control for laser dicing.
In an embodiment, active position control of a lens is used to
focus a laser beam in a laser dicing process.
[0025] To provide context, use of a fixed focal position of a laser
beam in a laser dicing process can result in scribe profiles that
may not be ideal due to variations in the chuck and/or substrate
surface due to flatness of chuck surface or levelling offsets that
occur due to assembly tolerances in a dicing system. There are no
known approaches for actively controlled laser focus during a
dicing process.
[0026] Advantages to implementing one or more embodiments described
herein may include one or more of: (1) increased uniformity of a
scribe profile across an entire wafer, (2) lower kerf width, (3)
higher wafer yield, and/or (4) increased die density on wafer. In
addition, in a case where a wafer is warped, approaches described
herein can be used to map warpage on a chuck (and/or substrate) and
adjust laser focus to compensate warpage in order to achieve
uniform scribe lines across warped wafers and/or a warped support
surface.
[0027] Embodiments of the present disclosure can be implemented to
actively control a focal position of a laser beam used to dice
silicon substrates in a laser dicing process. In one embodiment, a
topographical map of the silicon substrate chuck is first made by
moving the chuck at multiple positions under a fixed high precision
laser displacement sensor. The topographical map data is then used
to actively control the laser focusing lens position during the
scribing. In some cases, wafers are provided with warpage. A
warpage map can instead be generated or can also be generated
similarly for every wafer prior to scribing to generate clean and
uniform scribe lines on warped wafers. Embodiments may include one
or more of active laser focus control, chuck level mapping, or
warped wafer mapping. It is to be appreciated that since the
etching profile followed by the opening shape of laser scribing can
be determined by the scribe quality, etching rate and profile
uniformity can be improved during plasma dicing process if the
scribing process involves active laser focus as described
herein.
[0028] To provide further context, in a hybrid wafer or substrate
dicing process involving an initial laser scribe and subsequent
plasma etch of a coated wafer, a femtosecond laser may be applied
to remove the mask and device layers on the dicing street until the
silicon substrate is exposed. A plasma etch follows to separate
dies to realize die singulation. Typically, a non-actively-focused
beam is used for the femtosecond laser scribing process. However, a
non-actively-focused beam may limit process flexibility and/or
trench profile control.
[0029] In accordance with one or more embodiments of the present
disclosure, a scribing laser beam is actively-focused for improving
laser scribing process in hybrid laser dicing. As such, in an
aspect of the present disclosure, a combination of an
actively-focused laser beam laser scribing process with a plasma
etching process may be used to dice a semiconductor wafer into
singulated integrated circuits. FIG. 1 is a Flowchart 100
representing operations in a method of dicing a semiconductor wafer
including a plurality of integrated circuits, in accordance with an
embodiment of the present disclosure. FIGS. 2A-2C illustrate
cross-sectional views of a semiconductor wafer including a
plurality of integrated circuits during performing of a method of
dicing the semiconductor wafer, corresponding to operations of
Flowchart 100, in accordance with an embodiment of the present
disclosure.
[0030] Referring to operation 102 of Flowchart 100, and
corresponding FIG. 2A, a mask 202 is formed above a semiconductor
wafer or substrate 204. The mask 202 is composed of a layer
covering and protecting integrated circuits 206 formed on the
surface of semiconductor wafer 204. The mask 202 also covers
intervening streets 207 formed between each of the integrated
circuits 206.
[0031] In accordance with an embodiment of the present disclosure,
forming the mask 202 includes forming a layer such as, but not
limited to, a photo-resist layer or an I-line patterning layer. For
example, a polymer layer such as a photo-resist layer may be
composed of a material otherwise suitable for use in a lithographic
process. In one embodiment, the photo-resist layer is composed of a
positive photo-resist material such as, but not limited to, a 248
nanometer (nm) resist, a 193 nm resist, a 157 nm resist, an extreme
ultra-violet (EUV) resist, or a phenolic resin matrix with a
diazonaphthoquinone sensitizer. In another embodiment, the
photo-resist layer is composed of a negative photo-resist material
such as, but not limited to, poly-cis-isoprene and
poly-vinyl-cinnamate.
[0032] In another embodiment, forming the mask 202 involves forming
a layer deposited in a plasma deposition process. For example, in
one such embodiment, the mask 202 is composed of a plasma deposited
Teflon or Teflon-like (polymeric CF.sub.2) layer. In a specific
embodiment, the polymeric CF.sub.2 layer is deposited in a plasma
deposition process involving the gas C.sub.4F.sub.8.
[0033] In another embodiment, forming the mask 202 involves forming
a water-soluble mask layer. In an embodiment, the water-soluble
mask layer is readily dissolvable in an aqueous media. For example,
in one embodiment, the water-soluble mask layer is composed of a
material that is soluble in one or more of an alkaline solution, an
acidic solution, or in deionized water. In an embodiment, the
water-soluble mask layer maintains its water solubility upon
exposure to a heating process, such as heating approximately in the
range of 50-160 degrees Celsius. For example, in one embodiment,
the water-soluble mask layer is soluble in aqueous solutions
following exposure to chamber conditions used in a laser and plasma
etch singulation process. In one embodiment, the water-soluble mask
layer is composed of a material such as, but not limited to,
polyvinyl alcohol, polyacrylic acid, dextran, polymethacrylic acid,
polyethylene imine, or polyethylene oxide. In a specific
embodiment, the water-soluble mask layer has an etch rate in an
aqueous solution approximately in the range of 1-15 microns per
minute and, more particularly, approximately 1.3 microns per
minute.
[0034] In another embodiment, forming the mask 202 involves forming
a UV-curable mask layer. In an embodiment, the mask layer has a
susceptibility to UV light that reduces an adhesiveness of the
UV-curable layer by at least approximately 80%. In one such
embodiment, the UV layer is composed of polyvinyl chloride or an
acrylic-based material. In an embodiment, the UV-curable layer is
composed of a material or stack of materials with an adhesive
property that weakens upon exposure to UV light. In an embodiment,
the UV-curable adhesive film is sensitive to approximately 365 nm
UV light. In one such embodiment, this sensitivity enables use of
LED light to perform a cure.
[0035] In an embodiment, semiconductor wafer or substrate 204 is
composed of a material suitable to withstand a fabrication process
and upon which semiconductor processing layers may suitably be
disposed. For example, in one embodiment, semiconductor wafer or
substrate 204 is composed of a group IV-based material such as, but
not limited to, crystalline silicon, germanium or
silicon/germanium. In a specific embodiment, providing
semiconductor wafer 204 includes providing a monocrystalline
silicon substrate. In a particular embodiment, the monocrystalline
silicon substrate is doped with impurity atoms. In another
embodiment, semiconductor wafer or substrate 204 is composed of a
material such as, e.g., a material substrate used in the
fabrication of light emitting diodes (LEDs).
[0036] In an embodiment, semiconductor wafer or substrate 204 has
disposed thereon or therein, as a portion of the integrated
circuits 206, an array of semiconductor devices. Examples of such
semiconductor devices include, but are not limited to, memory
devices or complimentary metal-oxide-semiconductor (CMOS)
transistors fabricated in a silicon substrate and encased in a
dielectric layer. A plurality of metal interconnects may be formed
above the devices or transistors, and in surrounding dielectric
layers, and may be used to electrically couple the devices or
transistors to form the integrated circuits 206. Materials making
up the streets 207 may be similar to or the same as those materials
used to form the integrated circuits 206. For example, streets 207
may be composed of layers of dielectric materials, semiconductor
materials, and metallization. In one embodiment, one or more of the
streets 207 includes test devices similar to the actual devices of
the integrated circuits 206.
[0037] Referring to operation 104 of Flowchart 100, and
corresponding FIG. 2B, the mask 202 is patterned with an
actively-focused laser beam laser scribing process to provide a
patterned mask 208 with gaps 210, exposing regions of the
semiconductor wafer or substrate 204 between the integrated
circuits 206. As such, the laser scribing process is used to remove
the material of the streets 207 originally formed between the
integrated circuits 206. In accordance with an embodiment of the
present disclosure, patterning the mask 202 with the
actively-focused laser beam laser scribing process includes forming
trenches 212 partially into the regions of the semiconductor wafer
204 between the integrated circuits 206, as depicted in FIG.
2B.
[0038] For comparative purposes, as an exemplary case where active
focus correction of a laser beam is not implemented, FIG. 3
illustrates a cross-sectional view of a non-actively-focused laser
beam laser scribing process.
[0039] Referring to FIG. 3, a chuck 300 has a substrate 302
thereon. Laser optics 304 are positioned over the substrate 302. At
position A, a laser beam 306A is provided from laser optics 304 and
impinges at a surface location 308A of substrate 302. The laser
beam 306A is out of focus at position 308A due to undulation on
chuck surface 300, e.g., either as non-uniform topography of
substrate 302 or of chuck 300, in this case as a trough or low
point. At position B, a laser beam 306B is provided from laser
optics 304 and impinges at a surface location 308B of substrate
302. The laser beam 306B is in focus at position 308B since
position 308B happens to be the location targeted for focused
impingement of a laser beam (e.g., 306B) from laser optics 304. At
position C, a laser beam 306C is provided from laser optics 304 and
impinges at a surface location 308C of substrate 302. The laser
beam 306C is out of focus at position 308C due to undulation on
chuck surface 300, e.g., either as non-uniform topography of
substrate 302 or of chuck 300, in this case as a crest or high
point. More generally, referring to FIG. 3, a wafer 302 or chuck
300 top surface has some undulation causing a laser from optics 304
to go out of focus in multiple locations if focusing is performed
only at one point (it is to be appreciated that undulation can be
derived from chuck warpage and/or wafer warpage).
[0040] In contrast to FIG. 3, as an exemplary case where active
focus correction of a laser beam is implemented, FIG. 4 illustrates
a cross-sectional view of an actively-focused laser beam laser
scribing process, in accordance with an embodiment of the present
disclosure.
[0041] Referring to FIG. 4, a chuck 400 has a substrate 402
thereon. Laser optics 404 are positioned over the substrate 402. At
position A, a laser beam 406A is provided from laser optics 404 and
impinges at a surface location 408A of substrate 402. The laser
beam 406A is in focus at position 408A even though there is
undulation on chuck surface 400, e.g., either as non-uniform
topography of substrate 402 or of chuck 400, in this case as a
trough or low point. The laser is in focus because the laser optics
are positioned at a relatively lowered location over the substrate
402 to match the trough or low point.
[0042] At position B, a laser beam 406B is provided from laser
optics 404 and impinges at a surface location 408B of substrate
402. The laser beam 406B is in focus at position 408B since
position 308B happens to be the location targeted for focused
impingement (nominal position) of a laser beam (e.g., 406B) from
laser optics 404.
[0043] At position C, a laser beam 406C is provided from laser
optics 404 and impinges at a surface location 408C of substrate
402. The laser beam 406C is in focus at position 408C even though
there is undulation on chuck surface 400, e.g., either as
non-uniform topography of substrate 402 or of chuck 400, in this
case as a crest or high point. The laser is in focus because the
laser optics are positioned at a relatively raised location over
the substrate 402 to match the crest or high point.
[0044] More generally, referring to FIG. 4, a wafer 402 or chuck
400 top surface has some undulation (it is to be appreciated that
undulation can be derived from chuck warpage and/or wafer warpage).
Based on a chuck and/or wafer surface map, a laser focus lens
position is adjusted to ensure that a laser is actively focused on
undulated locations of a surface of a wafer.
[0045] With reference again to FIG. 4, in accordance with an
embodiment of the present disclosure, an actively-focused laser
beam laser scribing process involves lowering a laser beam over a
trough position (e.g., position 408A) of a semiconductor wafer 402.
In another embodiment, an actively-focused laser beam laser
scribing process involves raising a laser beam over a crest
position (e.g., position 408C) of a semiconductor wafer 402. In an
embodiment, an actively-focused laser beam laser scribing process
involves pre-mapping a topography of a semiconductor wafer 402 or a
topography of a chuck 400 for supporting the semiconductor wafer
402, or both. In an embodiment, an actively-focused laser beam
laser scribing process involves using a Gaussian source laser beam.
In one such embodiment, the actively-focused laser beam laser
scribing process involves using a femto-second source laser beam. 7
In an embodiment, scribing with an actively-focused laser beam
laser scribing process involves scribing with an actively-focused
femto-second based laser beam.
[0046] In an embodiment, a femtosecond-based laser is used as a
source for an actively-focused laser beam scribing process. For
example, in an embodiment, a laser with a wavelength in the visible
spectrum plus the ultra-violet (UV) and infra-red (IR) ranges
(totaling a broadband optical spectrum) is used to provide a
femtosecond-based laser pulse, which has a pulse width on the order
of the femtosecond (10.sup.-15 seconds). In one embodiment,
ablation is not, or is essentially not, wavelength dependent and is
thus suitable for complex films such as films of the mask 202, the
streets 207 and, possibly, a portion of the semiconductor wafer or
substrate 204.
[0047] FIG. 5 illustrates the effects of using a laser pulse width
in the femtosecond range, picosecond range, and nanosecond range,
in accordance with an embodiment of the present disclosure.
Referring to FIG. 5, by using a laser beam in the femtosecond
range, heat damage issues are mitigated or eliminated (e.g.,
minimal to no damage 502C with femtosecond processing of a via
500C) versus longer pulse widths (e.g., significant damage 502A
with nanosecond processing of a via 500A). The elimination or
mitigation of damage during formation of via 500C may be due to a
lack of low energy recoupling (as is seen for picosecond-based
laser ablation of 500B/502B) or thermal equilibrium (as is seen for
nanosecond-based laser ablation), as depicted in FIG. 5.
[0048] Laser parameters selection, such as beam profile, may be
critical to developing a successful laser scribing and dicing
process that minimizes chipping, microcracks and delamination in
order to achieve clean laser scribe cuts. The cleaner the laser
scribe cut, the smoother an etch process that may be performed for
ultimate die singulation. In semiconductor device wafers, many
functional layers of different material types (e.g., conductors,
insulators, semiconductors) and thicknesses are typically disposed
thereon. Such materials may include, but are not limited to,
organic materials such as polymers, metals, or inorganic
dielectrics such as silicon dioxide and silicon nitride.
[0049] A street between individual integrated circuits disposed on
a wafer or substrate may include the similar or same layers as the
integrated circuits themselves. For example, FIG. 6 illustrates a
cross-sectional view of a stack of materials that may be used in a
street region of a semiconductor wafer or substrate, in accordance
with an embodiment of the present disclosure.
[0050] Referring to FIG. 6, a street region 600 includes the top
portion 602 of a silicon substrate, a first silicon dioxide layer
604, a first etch stop layer 606, a first low K dielectric layer
608 (e.g., having a dielectric constant of less than the dielectric
constant of 4.0 for silicon dioxide), a second etch stop layer 610,
a second low K dielectric layer 612, a third etch stop layer 614,
an undoped silica glass (USG) layer 616, a second silicon dioxide
layer 618, and a layer of photo-resist 620, with relative
thicknesses depicted. Copper metallization 622 is disposed between
the first and third etch stop layers 606 and 614 and through the
second etch stop layer 610. In a specific embodiment, the first,
second and third etch stop layers 606, 610 and 614 are composed of
silicon nitride, while low K dielectric layers 608 and 612 are
composed of a carbon-doped silicon oxide material.
[0051] Under conventional laser irradiation (such as
nanosecond-based irradiation), the materials of street 600 behave
quite differently in terms of optical absorption and ablation
mechanisms. For example, dielectrics layers such as silicon
dioxide, is essentially transparent to all commercially available
laser wavelengths under normal conditions. By contrast, metals,
organics (e.g., low K materials) and silicon can couple photons
very easily, particularly in response to nanosecond-based
irradiation. In an embodiment, an actively-focused laser beam laser
scribing process is used to pattern a layer of silicon dioxide, a
layer of low K material, and a layer of copper by ablating the
layer of silicon dioxide prior to ablating the layer of low K
material and the layer of copper.
[0052] In case that the actively-focused laser beam is a
femtosecond-based laser beam, in an embodiment, suitable
femtosecond-based laser processes are characterized by a high peak
intensity (irradiance) that usually leads to nonlinear interactions
in various materials. In one such embodiment, the femtosecond laser
sources have a pulse width approximately in the range of 10
femtoseconds to 500 femtoseconds, although preferably in the range
of 100 femtoseconds to 400 femtoseconds. In one embodiment, the
femtosecond laser sources have a wavelength approximately in the
range of 1570 nanometers to 200 nanometers, although preferably in
the range of 540 nanometers to 250 nanometers. In one embodiment,
the laser and corresponding optical system provide a focal spot at
the work surface approximately in the range of 3 microns to 15
microns, though preferably approximately in the range of 5 microns
to 10 microns or between 10-15 microns.
[0053] In an embodiment, the laser source has a pulse repetition
rate approximately in the range of 200 kHz to 10 MHz, although
preferably approximately in the range of 500 kHz to 5 MHz. In an
embodiment, the laser source delivers pulse energy at the work
surface approximately in the range of 0.5 uJ to 100 uJ, although
preferably approximately in the range of 1 uJ to 5 uJ. In an
embodiment, the laser scribing process runs along a work piece
surface at a speed approximately in the range of 500 mm/sec to 5
m/sec, although preferably approximately in the range of 600 mm/sec
to 2 m/sec.
[0054] The scribing process may be run in single pass only, or in
multiple passes, but, in an embodiment, preferably 1-2 passes. In
one embodiment, the scribing depth in the work piece is
approximately in the range of 5 microns to 50 microns deep,
preferably approximately in the range of 10 microns to 20 microns
deep. In an embodiment, the kerf width of the laser beam generated
is approximately in the range of 2 microns to 15 microns, although
in silicon wafer scribing/dicing preferably approximately in the
range of 6 microns to 10 microns, measured at the device/silicon
interface.
[0055] Laser parameters may be selected with benefits and
advantages such as providing sufficiently high laser intensity to
achieve ionization of inorganic dielectrics (e.g., silicon dioxide)
and to minimize delamination and chipping caused by underlayer
damage prior to direct ablation of inorganic dielectrics. Also,
parameters may be selected to provide meaningful process throughput
for industrial applications with precisely controlled ablation
width (e.g., kerf width) and depth. In an embodiment, an
actively-focused laser beam laser scribing process is suitable to
provide such advantages.
[0056] It is to be appreciated that the dicing or singulation
process could be stopped after the above described laser scribing
in a case that the laser scribing is used to pattern the mask as
well as to scribe fully through the wafer or substrate in order to
singulate the dies. Accordingly, further singulation processing
would not be required in such a case. However, the following
embodiments may be considered in cases where laser scribing alone
is not implemented for total singulation.
[0057] Referring now to optional operation 106 of Flowchart 100, an
intermediate post mask-opening cleaning operation is performed. In
an embodiment, the post mask-opening cleaning operation is a
plasma-based cleaning process. In a first example, as described
below, the plasma-based cleaning process is reactive to the regions
of the substrate 204 exposed by the gaps 210. In the case of a
reactive plasma-based cleaning process, the cleaning process itself
may form or extend trenches 212 in the substrate 204 since the
reactive plasma-based cleaning operation is at least somewhat of an
etchant for the substrate 204. In a second, different, example, as
is also described below, the plasma-based cleaning process is
non-reactive to the regions of the substrate 204 exposed by the
gaps 210.
[0058] In accordance with a first embodiment, the plasma-based
cleaning process is reactive to exposed regions of the substrate
204 in that the exposed regions are partially etched during the
cleaning process. In one such embodiment, Ar or another
non-reactive gas (or the mix) is combined with SF.sub.6 for a
highly-biased plasma treatment for cleaning of scribed openings.
The plasma treatment using mixed gases Ar+SF.sub.6 under high-bias
power is performed for bombarding mask-opened regions to achieve
cleaning of the mask-opened regions. In the reactive breakthrough
process, both physical bombardment from Ar and SF.sub.6 along with
chemical etching due to SF.sub.6 and F-ions contribute to cleaning
of mask-opened regions. The approach may be suitable for
photoresist or plasma-deposited Teflon masks 202, where
breakthrough treatment leads to fairly uniform mask thickness
reduction and a gentle Si etch. Such a breakthrough etch process,
however, may not be best suited for water soluble mask
materials.
[0059] In accordance with a second embodiment, the plasma-based
cleaning process is non-reactive to exposed regions of the
substrate 204 in that the exposed regions are not or only
negligible etched during the cleaning process. In one such
embodiment, only non-reactive gas plasma cleaning is used. For
example, Ar or another non-reactive gas (or the mix) is used to
perform a highly-biased plasma treatment both for mask condensation
and cleaning of scribed openings. The approach may be suitable for
water-soluble masks or for thinner plasma-deposited Teflon 202. In
another such embodiment, separate mask condensation and scribed
trench cleaning operations are used, e.g., an Ar or non-reactive
gas (or the mix) highly-biased plasma treatment for mask
condensation is first performed, and then an Ar+SF.sub.6 plasma
cleaning of a laser scribed trench is performed. This embodiment
may be suitable for cases where Ar-cleaning is not sufficient for
trench cleaning due to too thick of a mask material. Cleaning
efficiency is improved for thinner masks, but mask etch rate is
much lower, with almost no consumption in a subsequent deep silicon
etch process. In yet another such embodiment, three-operation
cleaning is performed: (a) Ar or non-reactive gas (or the mix)
highly-biased plasma treatment for mask condensation, (b)
Ar+SF.sub.6 highly-biased plasma cleaning of laser scribed
trenches, and (c) Ar or non-reactive gas (or the mix) highly-biased
plasma treatment for mask condensation. In accordance with another
embodiment of the present disclosure, a plasma cleaning operation
involves first use of a reactive plasma cleaning treatment, such as
described above in the first aspect of operation 106. The reactive
plasma cleaning treatment is then followed by a non-reactive plasma
cleaning treatment such as described in association with the second
aspect of operation 106.
[0060] Referring to operation 108 of Flowchart 100, and
corresponding FIG. 2C, the semiconductor wafer 204 is etched
through the gaps 210 in the patterned mask 208 to singulate the
integrated circuits 206. In accordance with an embodiment of the
present disclosure, etching the semiconductor wafer 204 includes
ultimately etching entirely through semiconductor wafer 204, as
depicted in FIG. 2C, by etching the trenches 212 initially formed
with the actively-focused laser beam laser scribing process.
[0061] In an embodiment, patterning the mask with the laser
scribing process involves forming trenches in the regions of the
semiconductor wafer between the integrated circuits, and plasma
etching the semiconductor wafer involves extending the trenches to
form corresponding trench extensions. In one such embodiment, each
of the trenches has a width, and each of the corresponding trench
extensions has the width.
[0062] In accordance with an embodiment of the present disclosure,
the resulting roughness of mask opening from laser scribing can
impact die sidewall quality resulting from the subsequent formation
of a plasma etched trench. Lithographically opened masks often have
smooth profiles, leading to smooth corresponding sidewalls of a
plasma etched trench. By contrast, a conventional laser opened mask
can have a very rough profile along a scribing direction if
improper laser process parameters are selected (such as spot
overlap, leading to rough sidewall of plasma etched trench
horizontally). Although the surface roughness can be smoothened by
additional plasma processes, there is a cost and throughput hit to
remedying such issues. Accordingly, embodiments described herein
may be advantageous in providing a smoother scribing process and/or
more reliable trench formation process from the laser scribing
portion of the singulation process.
[0063] In an embodiment, etching the semiconductor wafer 204
includes using a plasma etching process. In one embodiment, a
through-silicon via type etch process is used. For example, in a
specific embodiment, the etch rate of the material of semiconductor
wafer 204 is greater than 25 microns per minute. An
ultra-high-density plasma source may be used for the plasma etching
portion of the die singulation process. An example of a process
chamber suitable to perform such a plasma etch process is the
Applied Centura.RTM. Silvia.TM. Etch system available from Applied
Materials of Sunnyvale, Calif., USA. The Applied Centura.RTM.
Silvia.TM. Etch system combines the capacitive and inductive RF
coupling, which gives much more independent control of the ion
density and ion energy than was possible with the capacitive
coupling only, even with the improvements provided by magnetic
enhancement. This combination enables effective decoupling of the
ion density from ion energy, so as to achieve relatively high
density plasmas without the high, potentially damaging, DC bias
levels, even at very low pressures. This results in an
exceptionally wide process window. However, any plasma etch chamber
capable of etching silicon may be used. In an exemplary embodiment,
a deep silicon etch is used to etch a single crystalline silicon
substrate or wafer 204 at an etch rate greater than approximately
40% of conventional silicon etch rates while maintaining
essentially precise profile control and virtually scallop-free
sidewalls. In a specific embodiment, a through-silicon via type
etch process is used. The etch process is based on a plasma
generated from a reactive gas, which generally a fluorine-based gas
such as SF.sub.6, C.sub.4 F.sub.8, CHF.sub.3, XeF.sub.2, or any
other reactant gas capable of etching silicon at a relatively fast
etch rate. In an embodiment, the mask layer 208 is removed after
the singulation process, as depicted in FIG. 2C. In another
embodiment, the plasma etching operation described in association
with FIG. 2C employs a conventional Bosch-type dep/etch/dep process
to etch through the substrate 204. Generally, a Bosch-type process
consists of three sub-operations: deposition, a directional
bombardment etch, and isotropic chemical etch which is run through
many iterations (cycles) until silicon is etched through.
[0064] Accordingly, referring again to Flowchart 100 and FIGS.
2A-2C, wafer dicing may be preformed by initial ablation using an
actively-focused laser beam laser scribing process to ablate
through a mask layer, through wafer streets (including
metallization), and partially into a silicon substrate. Die
singulation may then be completed by subsequent through-silicon
deep plasma etching. A specific example of a materials stack for
dicing is described below in association with FIGS. 7A-7D, in
accordance with an embodiment of the present disclosure.
[0065] Referring to FIG. 7A, a materials stack for hybrid laser
ablation and plasma etch dicing includes a mask layer 702, a device
layer 704, and a substrate 706. The mask layer, device layer, and
substrate are disposed above a die attach film 708 which is affixed
to a backing tape 710. In an embodiment, the mask layer 702 is a
water soluble layer such as the water soluble layers described
above in association with mask 202. The device layer 704 includes
an inorganic dielectric layer (such as silicon dioxide) disposed
above one or more metal layers (such as copper layers) and one or
more low K dielectric layers (such as carbon-doped oxide layers).
The device layer 704 also includes streets arranged between
integrated circuits, the streets including the same or similar
layers to the integrated circuits. The substrate 706 is a bulk
single-crystalline silicon substrate.
[0066] In an embodiment, the bulk single-crystalline silicon
substrate 706 is thinned from the backside prior to being affixed
to the die attach film 708. The thinning may be performed by a
backside grind process. In one embodiment, the bulk
single-crystalline silicon substrate 706 is thinned to a thickness
approximately in the range of 50-100 microns. It is important to
note that, in an embodiment, the thinning is performed prior to a
laser ablation and plasma etch dicing process. In an embodiment,
the photo-resist layer 702 has a thickness of approximately 5
microns and the device layer 704 has a thickness approximately in
the range of 2-3 microns. In an embodiment, the die attach film 708
(or any suitable substitute capable of bonding a thinned or thin
wafer or substrate to the backing tape 710) has a thickness of
approximately 20 microns.
[0067] Referring to FIG. 7B, the mask 702, the device layer 704 and
a portion of the substrate 706 are patterned with an
actively-focused laser beam laser scribing process 712 to form
trenches 714 in the substrate 706. Referring to FIG. 7C, a
through-silicon deep plasma etch process 716 is used to extend the
trench 714 down to the die attach film 708, exposing the top
portion of the die attach film 708 and singulating the silicon
substrate 706. The device layer 704 is protected by the mask layer
702 during the through-silicon deep plasma etch process 716.
[0068] Referring to FIG. 7D, the singulation process may further
include patterning the die attach film 708, exposing the top
portion of the backing tape 710 and singulating the die attach film
708. In an embodiment, the die attach film is singulated by a laser
process or by an etch process. Further embodiments may include
subsequently removing the singulated portions of substrate 706
(e.g., as individual integrated circuits) from the backing tape
710. In one embodiment, the singulated die attach film 708 is
retained on the back sides of the singulated portions of substrate
706. Other embodiments may include removing the mask layer 702 from
the device layer 704. In an alternative embodiment, in the case
that substrate 706 is thinner than approximately 50 microns, the
actively-focused laser beam laser scribing process 712 is used to
completely singulate substrate 706 without the use of an additional
plasma process.
[0069] A single process tool may be configured to perform many or
all of the operations in an actively-focused laser beam ablation
and plasma etch singulation process. For example, FIG. 8
illustrates a block diagram of a tool layout for laser and plasma
dicing of wafers or substrates, in accordance with an embodiment of
the present disclosure.
[0070] Referring to FIG. 8, a process tool 800 includes a factory
interface 802 (FI) having a plurality of load locks 804 coupled
therewith. A cluster tool 806 is coupled with the factory interface
802. The cluster tool 806 includes one or more plasma etch
chambers, such as plasma etch chamber 808. A laser scribe apparatus
810 is also coupled to the factory interface 802. The overall
footprint of the process tool 800 may be, in one embodiment,
approximately 3500 millimeters (3.5 meters) by approximately 3800
millimeters (3.8 meters), as depicted in FIG. 8.
[0071] In an embodiment, the laser scribe apparatus 810 houses a
laser assembly configured to provide an actively-focused laser
beam. In one such embodiment, the laser assembly is configured to
provide an actively-focused laser beam at a lowered position over a
trough position of a semiconductor wafer. In another such
embodiment, the laser assembly is configured to provide an
actively-focused laser beam at a raised position over a crest
position of a semiconductor wafer. In an embodiment, the laser
scribe apparatus 810 is configured to pre-map a topography of a
semiconductor wafer or a topography of a chuck for supporting a
semiconductor wafer, or both. In an embodiment, the laser assembly
includes a Gaussian source laser beam. In an embodiment, the laser
assembly includes a femto-second source laser beam.
[0072] In an embodiment, the laser is suitable for performing a
laser ablation portion of a hybrid laser and etch singulation
process, such as the laser ablation processes described above. In
one embodiment, a moveable stage is also included in laser scribe
apparatus 810, the moveable stage configured for moving a wafer or
substrate (or a carrier thereof) relative to the laser. In a
specific embodiment, the laser is also moveable. The overall
footprint of the laser scribe apparatus 810 may be, in one
embodiment, approximately 2240 millimeters by approximately 1270
millimeters, as depicted in FIG. 8.
[0073] In an embodiment, the one or more plasma etch chambers 808
is configured for etching a wafer or substrate through the gaps in
a patterned mask to singulate a plurality of integrated circuits.
In one such embodiment, the one or more plasma etch chambers 808 is
configured to perform a deep silicon etch process. In a specific
embodiment, the one or more plasma etch chambers 808 is an Applied
Centura.RTM. Silvia.TM. Etch system, available from Applied
Materials of Sunnyvale, Calif., USA. The etch chamber may be
specifically designed for a deep silicon etch used to create
singulate integrated circuits housed on or in single crystalline
silicon substrates or wafers. In an embodiment, a high-density
plasma source is included in the plasma etch chamber 808 to
facilitate high silicon etch rates. In an embodiment, more than one
etch chamber is included in the cluster tool 806 portion of process
tool 800 to enable high manufacturing throughput of the singulation
or dicing process.
[0074] The factory interface 802 may be a suitable atmospheric port
to interface between an outside manufacturing facility with laser
scribe apparatus 810 and cluster tool 806. The factory interface
802 may include robots with arms or blades for transferring wafers
(or carriers thereof) from storage units (such as front opening
unified pods) into either cluster tool 806 or laser scribe
apparatus 810, or both.
[0075] Cluster tool 806 may include other chambers suitable for
performing functions in a method of singulation. For example, in
one embodiment, in place of an additional etch chamber, a
deposition chamber 812 is included. The deposition chamber 812 may
be configured for mask deposition on or above a device layer of a
wafer or substrate prior to laser scribing of the wafer or
substrate. In one such embodiment, the deposition chamber 812 is
suitable for depositing a photo-resist layer. In another
embodiment, in place of an additional etch chamber, a wet/dry
station 814 is included. The wet/dry station may be suitable for
cleaning residues and fragments, or for removing a mask, subsequent
to a laser scribe and plasma etch singulation process of a
substrate or wafer. In yet another embodiment, in place of an
additional deep silicon etch chamber, a plasma etch chamber is
included and is configured for performing a plasma-based cleaning
process. In an embodiment, a metrology station is also included as
a component of process tool 800.
[0076] Embodiments of the present disclosure may be provided as a
computer program product, or software, that may include a
machine-readable medium having stored thereon instructions, which
may be used to program a computer system (or other electronic
devices) to perform a process according to embodiments of the
present disclosure. In one embodiment, the computer system is
coupled with process tool 800 described in association with FIG. 8.
A machine-readable medium includes any mechanism for storing or
transmitting information in a form readable by a machine (e.g., a
computer). For example, a machine-readable (e.g.,
computer-readable) medium includes a machine (e.g., a computer)
readable storage medium (e.g., read only memory ("ROM"), random
access memory ("RAM"), magnetic disk storage media, optical storage
media, flash memory devices, etc.), a machine (e.g., computer)
readable transmission medium (electrical, optical, acoustical or
other form of propagated signals (e.g., infrared signals, digital
signals, etc.)), etc.
[0077] FIG. 9 illustrates a diagrammatic representation of a
machine in the exemplary form of a computer system 900 within which
a set of instructions, for causing the machine to perform any one
or more of the methodologies described herein, may be executed. In
alternative embodiments, the machine may be connected (e.g.,
networked) to other machines in a Local Area Network (LAN), an
intranet, an extranet, or the Internet. The machine may operate in
the capacity of a server or a client machine in a client-server
network environment, or as a peer machine in a peer-to-peer (or
distributed) network environment. The machine may be a personal
computer (PC), a tablet PC, a set-top box (STB), a Personal Digital
Assistant (PDA), a cellular telephone, a web appliance, a server, a
network router, switch or bridge, or any machine capable of
executing a set of instructions (sequential or otherwise) that
specify actions to be taken by that machine. Further, while only a
single machine is illustrated, the term "machine" shall also be
taken to include any collection of machines (e.g., computers) that
individually or jointly execute a set (or multiple sets) of
instructions to perform any one or more of the methodologies
described herein.
[0078] The exemplary computer system 900 includes a processor 902,
a main memory 904 (e.g., read-only memory (ROM), flash memory,
dynamic random access memory (DRAM) such as synchronous DRAM
(SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 906 (e.g.,
flash memory, static random access memory (SRAM), MRAM, etc.), and
a secondary memory 918 (e.g., a data storage device), which
communicate with each other via a bus 930.
[0079] Processor 902 represents one or more general-purpose
processing devices such as a microprocessor, central processing
unit, or the like. More particularly, the processor 902 may be a
complex instruction set computing (CISC) microprocessor, reduced
instruction set computing (RISC) microprocessor, very long
instruction word (VLIW) microprocessor, processor implementing
other instruction sets, or processors implementing a combination of
instruction sets. Processor 902 may also be one or more
special-purpose processing devices such as an application specific
integrated circuit (ASIC), a field programmable gate array (FPGA),
a digital signal processor (DSP), network processor, or the like.
Processor 902 is configured to execute the processing logic 926 for
performing the operations described herein.
[0080] The computer system 900 may further include a network
interface device 908. The computer system 900 also may include a
video display unit 910 (e.g., a liquid crystal display (LCD), a
light emitting diode display (LED), or a cathode ray tube (CRT)),
an alphanumeric input device 912 (e.g., a keyboard), a cursor
control device 914 (e.g., a mouse), and a signal generation device
916 (e.g., a speaker).
[0081] The secondary memory 918 may include a machine-accessible
storage medium (or more specifically a computer-readable storage
medium) 932 on which is stored one or more sets of instructions
(e.g., software 922) embodying any one or more of the methodologies
or functions described herein. The software 922 may also reside,
completely or at least partially, within the main memory 904 and/or
within the processor 902 during execution thereof by the computer
system 900, the main memory 904 and the processor 902 also
constituting machine-readable storage media. The software 922 may
further be transmitted or received over a network 920 via the
network interface device 908.
[0082] While the machine-accessible storage medium 932 is shown in
an exemplary embodiment to be a single medium, the term
"machine-readable storage medium" should be taken to include a
single medium or multiple media (e.g., a centralized or distributed
database, and/or associated caches and servers) that store the one
or more sets of instructions. The term "machine-readable storage
medium" shall also be taken to include any medium that is capable
of storing or encoding a set of instructions for execution by the
machine and that cause the machine to perform any one or more of
the methodologies of the present disclosure. The term
"machine-readable storage medium" shall accordingly be taken to
include, but not be limited to, solid-state memories, and optical
and magnetic media.
[0083] In accordance with an embodiment of the present disclosure,
a machine-accessible storage medium has instructions stored thereon
which cause a data processing system to perform a method of dicing
a semiconductor wafer having a plurality of integrated circuits.
The method includes forming a mask above the semiconductor wafer,
the mask composed of a layer covering and protecting the integrated
circuits. The mask is then patterned with an actively-focused laser
beam laser scribing process to provide a patterned mask with gaps,
exposing regions of the semiconductor wafer between the integrated
circuits. The semiconductor wafer is then plasma etched through the
gaps in the patterned mask to singulate the integrated
circuits.
[0084] Thus, hybrid wafer dicing approaches using an
actively-focused laser beam and plasma etch process have been
disclosed.
* * * * *