U.S. patent application number 17/008803 was filed with the patent office on 2021-09-09 for probe and manufacturing method of probe for scanning probe microscope.
This patent application is currently assigned to Kioxia Corporation. The applicant listed for this patent is Kioxia Corporation. Invention is credited to Mitsuo KOIKE, See Kei LEE, Masumi SAITOH.
Application Number | 20210278437 17/008803 |
Document ID | / |
Family ID | 1000005079765 |
Filed Date | 2021-09-09 |
United States Patent
Application |
20210278437 |
Kind Code |
A1 |
LEE; See Kei ; et
al. |
September 9, 2021 |
PROBE AND MANUFACTURING METHOD OF PROBE FOR SCANNING PROBE
MICROSCOPE
Abstract
A manufacturing method of a probe according to the present
embodiment is used to manufacture a probe for a scanning probe
microscope. An insulating film is formed on the surface of a probe
provided on a base. Metal ions are implanted into the insulating
film. An electric field is applied to the insulating film to
concentrate the metal ions in the insulating film at a tip of the
probe and form a metallic filament in the insulating film.
Inventors: |
LEE; See Kei; (Kawasaki
Kanagawa, JP) ; KOIKE; Mitsuo; (Yokohama Kanagawa,
JP) ; SAITOH; Masumi; (Yokohama Kanagawa,
JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Kioxia Corporation |
Tokyo |
|
JP |
|
|
Assignee: |
Kioxia Corporation
Tokyo
JP
|
Family ID: |
1000005079765 |
Appl. No.: |
17/008803 |
Filed: |
September 1, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G01Q 60/58 20130101;
G01Q 70/14 20130101; G01Q 70/16 20130101 |
International
Class: |
G01Q 70/14 20060101
G01Q070/14; G01Q 70/16 20060101 G01Q070/16; G01Q 60/58 20060101
G01Q060/58 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 4, 2020 |
JP |
2020-036941 |
Claims
1. A manufacturing method of a probe used for a scanning probe
measuring apparatus, the method comprising: forming an insulating
film on a surface of a probe provided on a base; implanting metal
ions into the insulating film; and applying an electric field to
the insulating film to concentrate the metal ions in the insulating
film at a tip of the probe and form a metallic filament in the
insulating film.
2. The method of claim 1, comprising applying a magnetic field as
well as an electric field to the insulating field at the time of
formation of the metallic filament.
3. The method of claim 1, wherein any metal selected from a group
consisting of gold (Au), platinum (Pt), zirconium (Zr), iridium
(Ir), tellurium (Te), bismuth (Bi), vanadium (V), tin (Sn), indium
(In), palladium (Pd), and rhodium (Rh), an alloy of any two or more
types of metal selected from the group, a nitride of any metal
selected from the group, a carbide of any metal selected from the
group, or a chalcogenide material of any metal selected from the
group is used as the metallic filament.
4. The method of claim 2, wherein any metal selected from a group
consisting of gold (Au), platinum (Pt), zirconium (Zr), iridium
(Ir), tellurium (Te), bismuth (Bi), vanadium (V), tin (Sn), indium
(In), palladium (Pd), and rhodium (Rh), an alloy of any two or more
types of metal selected from the group, a nitride of any metal
selected from the group, a carbide of any metal selected from the
group, or a chalcogenide material of any metal selected from the
group is used as the metallic filament.
5. The method of claim 1, wherein the base is a conductive body,
and an electric field is applied to the insulating film by bringing
an electrode into contact with a bottom surface of the base and
applying a voltage between the base and the electrode at a time of
formation of the metallic filament.
6. The method of claim 2, wherein the base is a conductive body,
and an electric field is applied to the insulating film by bringing
an electrode into contact with a bottom surface of the base and
applying a voltage between the base and the electrode at a time of
formation of the metallic filament.
7. The method of claim 3, wherein the base is a conductive body, an
electric field is applied to the insulating film by bringing an
electrode into contact with a bottom surface of the base and
applying a voltage between the base and the electrode at a time of
formation of the metallic filament.
8. The method of claim 1, wherein the base is a non-conductive
body, a first conductor film is formed on a surface of a probe
provided on the base, the insulating film is formed on the first
conductor film, and an electric field is applied to the insulating
film by bringing an electrode into contact with a bottom surface of
the insulating film and applying a voltage between the first
conductor film and the electrode at a time of formation of the
metallic filament.
9. The method of claim 2, wherein the base is a non-conductive
body, a first conductor film is formed on a surface of a probe
provided on the base, the insulating film is formed on the first
conductor film, and an electric field is applied to the insulating
film by bringing an electrode into contact with a bottom surface of
the insulating film and applying a voltage between the first
conductor film and the electrode at a time of formation of the
metallic filament.
10. The method of claim 3, wherein the base is a non-conductive
body, a first conductor film is formed on a surface of a probe
provided on the base, the insulating film is formed on the first
conductor film, and an electric field is applied to the insulating
film by bringing an electrode into contact with a bottom surface of
the insulating film and applying a voltage between the first
conductor film and the electrode at a time of formation of the
metallic filament.
11. The method of claim 1, wherein the metal ions are implanted in
a protruding direction of the probe or an opposite direction to the
protruding direction.
12. The method of claim 2, wherein a direction of an electric field
and a direction of a magnetic field are substantially same
directions, where the electric field and the magnetic field are
applied to the insulating film.
13. The method of claim 2, wherein an application direction of an
electric field applied to the insulating film is changed between a
protruding direction of the probe and an opposite direction to the
protruding direction, and an application direction of a magnetic
field applied to the insulating film is not changed.
14.-19. (cancelled)
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is based upon and claims the benefit of
priority from the prior Japanese Patent Application No.
2020-036941, filed on Mar. 4, 2020, the entire contents of which
are incorporated herein by reference.
FIELD
[0002] The embodiments of the present invention relate to a probe
and manufacturing method of a probe for a scanning probe
microscope.
BACKGROUND
[0003] A scanning probe microscope (SPM) includes a cantilever
having a probe on an end. Particularly, a scanning thermal
microscope (SThM) can measure a surface temperature of a specimen
by measuring a current generated due to the Seebeck effect using a
probe including a thermocouple on a tip, or can examine thermal
conductivity characteristics of the specimen surface on the basis
of temperature dependency of an electrical resistance of a probe
tip portion. In order to apply the thermal microscope to a
nanometer-scale level microscopic structure, a conductive probe
downscaled to the nanometer-scale level is required.
[0004] For example, a thermocouple probe formed by joining
different types of metals is used as the probe of the cantilever.
The spatial resolution of this cantilever depends on the size of
metal joint point. Therefore, sufficient reduction in the size of
the probe tip is required to enable thermal characterization of a
nanometer-scale level microscopic structure.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] FIG. 1 is a block diagram illustrating an example of a
configuration of a scanning probe microscope according to a first
embodiment;
[0006] FIG. 2 is a cross-sectional view illustrating an example of
a configuration of a probe according to the first embodiment;
[0007] FIG. 3 is an enlarged cross-sectional view illustrating a
tip of a probe of a cantilever;
[0008] FIG. 4 is a schematic diagram illustrating an example of a
manufacturing method of a probe according to the first
embodiment;
[0009] FIG. 5 is a schematic diagram illustrating an example of the
manufacturing method of a probe subsequent to the method in FIG.
4;
[0010] FIG. 6A is a schematic diagram illustrating an example of
the manufacturing method of a probe subsequent to the method in
FIG. 5;
[0011] FIG. 6B is an enlarged cross-sectional view of a tip portion
of the probe illustrated in FIG. 6A;
[0012] FIG. 7A is a schematic diagram illustrating an example of
the manufacturing method of a probe subsequent to the method in
FIG. 6A;
[0013] FIG. 7B is an enlarged cross-sectional view of a tip portion
of the probe illustrated in FIG. 7A;
[0014] FIG. 8A is a diagram illustrating a manner in which a
magnetic field is applied to an insulating film;
[0015] FIG. 8B is a diagram illustrating a manner in which a
magnetic field is applied to an insulating film;
[0016] FIG. 9A is a cross-sectional view illustrating an example of
a configuration of a filament and a formation process according to
a second embodiment;
[0017] FIG. 9B is an enlarged cross-sectional view of a tip portion
of a probe illustrated in FIG. 9A;
[0018] FIG. 10A is a cross-sectional view illustrating an example
of a configuration of a filament and a formation process according
to a third embodiment;
[0019] FIG. 10B is an enlarged cross-sectional view of a tip
portion of a probe illustrated in FIG. 10A;
[0020] FIG. 11A is a cross-sectional view illustrating an example
of a configuration of a filament and a formation process according
to a fourth embodiment; and
[0021] FIG. 11B is an enlarged cross-sectional view of a tip
portion of a probe illustrated in FIG. 11A.
DETAILED DESCRIPTION
[0022] Embodiments will now be explained with reference to the
accompanying drawings. The present invention is not limited to the
embodiments. In the present specification and the drawings,
elements identical to those described in the foregoing drawings are
denoted by like reference characters and detailed explanations
thereof are omitted as appropriate.
[0023] A manufacturing method of a probe according to the present
embodiment is used for manufacturing a probe for a scanning
microscope. An insulating film is formed on the surface of a probe
provided on a base. Metal ions are implanted into the insulating
film. An electric field is applied to the insulating film to
concentrate the metal ions in the insulating film of the probe to
form a metallic filament in the insulating film.
First Embodiment
[0024] FIG. 1 is a block diagram illustrating an example of a
configuration of a scanning probe microscope according to a first
embodiment. The scanning probe microscope (hereinafter, also SPM) 1
includes a cantilever 10, a stage 20, a driver 30, a controller 40,
a computer 50, a feedback circuit 60, an ammeter 70, a light
emitting element 80, a photodetector 90, and a magnetic field
generation device 110.
[0025] The SPM 1 scans the surface of a specimen 100 on the stage
20 using a tip of a conductive probe 11 of the cantilever 10. At
this time, a voltage is applied between the cantilever 10 and the
specimen 100, whereby the SPM 1 evaluates the electrical
characteristics of the specimen 100 on the basis of a current
flowing through the probe 11. The SPM 1 may be configured as a
scanning thermal microscope (SThM). In this case, the SPM 1
measures the temperature or the thermal characteristics of the
specimen 100.
[0026] The cantilever 10 has the probe 11 on an end of a cantilever
base and is brought into contact with the surface of the specimen
100 at the tip of the probe 11 to scan the specimen 100. A
configuration of the cantilever 10 and a manufacturing method
thereof will be explained later.
[0027] The stage 20 is configured to enable the specimen 100 to be
mounted thereon. The stage 20 is formed of, for example, a
conductive material such as metal and functions as an electrode at
the time of measurement of the electrical characteristics or the
thermal characteristics of the specimen 100.
[0028] The driver 30 can move the stage 20. For example, the driver
30 is a scanner that incorporates a piezoelectric element for
driving three axes including an X axis, a Y axis, and a Z axis, and
can move the stage 20 in the Z direction to bring the specimen 100
closer to the probe 11 or to separate the specimen 100 from the
probe 11 and also move the specimen 100 in an X-Y plane.
[0029] The controller 40 controls the driver 30 to control the
position of the stage 20. The computer 50 receives a detection
result from the photodetector 90 via the feedback circuit 60 and
calculates the position of the probe 11. The computer 50 outputs a
location command, a speed command, a torque command, and the like
(etc.) to the controller 40 to move the stage 20 to a predetermined
position on the basis of the position of the probe 11.
[0030] The ammeter 70 is connected to the cantilever 10 and
measures a current flowing through the probe 11 and transmit a
measurement result to the computer 50. The computer 50 stores
therein the measurement result and calculates the electrical
characteristics or the thermal characteristics of the specimen 100
on the basis of the measurement result. The computer 50 also
generates a topography and a temperature or thermal characteristic
distribution image of the specimen 100.
[0031] The light emitting element 80 irradiates the back surface of
the cantilever 10 with light (for example, laser light). The
photodetector 90 detects the reflection light having reflected from
the back surface of the cantilever 10. Accordingly, the angle of
the cantilever 10 can be detected.
[0032] The feedback circuit 60 feeds back a signal from the
photodetector 90 to the computer 50. The computer 50 adjusts the
height of the specimen 100 on the stage 20 via the controller 40
and the driver 30. This enables the SPM 1 to control the distance
between the cantilever 10 and the specimen 100 or the contact state
(pressing force, or the like (etc.)) therebetween.
[0033] The magnetic field generation device 110 may be, for
example, an electromagnetic lens including a pole piece 111 and an
electromagnetic coil 112. The pole piece 111 and the
electromagnetic coil 112 are established around the stage 20 and
concentratedly apply a magnetic field B to the probe 11. When the
stage 20 is substantially circular as viewed in the Z direction,
the magnetic field generation device 110 may be formed in an
annular shape to conform to the shape of the stage 20. The magnetic
field generation device 110 is attached to the stage 20. The
magnetic field generation device 110 is not necessarily mounted on
the stage 20. The magnetic field generation device 110 may apply a
magnetic field to the probe 11.
[0034] Next, a configuration of the cantilever 10 is explained. The
cantilever 10 scans the surface of the specimen 100 while being in
contact with the specimen 100 at the tip of the probe 11 and
evaluates the electrical characteristics or the thermal
characteristics of the specimen 100.
[0035] FIG. 2 is a cross-sectional view illustrating an example of
the configuration of the cantilever according to the first
embodiment. The cantilever 10 includes a base 15, a probe 11, an
insulating film 12, and a metallic filament 13. The base 15 is, for
example, a prismatic beam supported at one side and has the probe
11 on a distal end. The probe 11 protrudes in a substantially
perpendicular direction to the extending direction of the base 15.
The base 15 and the probe 11 may be formed as one unit. In the
present embodiment, a conductive material such as metal is used as
the base 15 and the probe 11. Alternatively, silicon may be used as
the base 15 and the probe 11.
[0036] The insulating film 12 coats the surface of the base 15 and
also coats the surface of the probe 11. For example, an insulating
material such as a silicon dioxide film, a silicon nitride film, an
aluminum oxide, or an aluminum nitride is used as the insulating
film 12. The insulating film 12 contains metal ions.
[0037] The filament 13 is formed by the concentration of metal ions
in the insulating film 12 between the tip of the probe 11 and the
specimen 100. The metallic filament 13 is formed from the same
metal as that of the metal ions contained in the insulating film
12. That is, the insulating film 12 coating the probe 11 contains
the same type of metal ions as that of the metallic filament
13.
[0038] FIG. 3 is an enlarged cross-sectional view illustrating the
tip of the probe. The probe 11 is coated with the insulating film
12 and the metallic filament 13 is provided on the tip of the probe
11. The filament 13 is formed by the concentration of metal ions in
the insulating film 12 between the tip of the probe 11 and the
specimen 100. Accordingly, when the probe 11 scans the specimen
100, the metallic filament 13 is brought into direct contact with
the specimen 100 at the tip of the probe 11, thereby electrically
connecting the probe 11 (that is, the base 15) and the specimen 100
located outside the insulating film 12. The insulating film 12
covers the periphery of the metallic filament 13 and electrically
insulates the probe 11 from outside.
[0039] The metallic filament 13 is formed of metal M similar as
that of the metal ions contained in the insulating film 12. For
example, any metal selected from a group consisting of gold (Au),
platinum (Pt), zirconium (Zr), iridium (Ir), tellurium (Te),
bismuth (Bi), vanadium (V), tin (Sn), indium (In), palladium (Pd),
and rhodium (Rh), an alloy of any two or more types of metal
selected from the group, a nitride of any metal selected from the
group, a carbide of any metal selected from the group, or a
chalcogenide material of any metal selected from the group is used
as the metallic filament 13.
[0040] As described above, the cantilever 10 according to the
present embodiment has the surface of the probe 11 of the base 15
coated with the insulating film 12 and electrically connects
between the base 15 and the specimen 100 only with the metallic
filament 13. The insulating film 12 that covers the periphery of
the metallic filament 13 electrically insulates the probe 11 or the
base 15 from the specimen 100.
[0041] Next, a manufacturing method of the cantilever 10 is
explained.
[0042] FIGS. 4 to 8B are schematic diagrams illustrating an example
of the manufacturing method of a cantilever according to the first
embodiment. First, the base 15 is prepared as illustrated in FIG.
4. The base 15 is, for example, a base of a prismatic beam
supported at one side and has the probe 11 on one end. The probe 11
protrudes in a substantially perpendicular direction to the
extending direction of the base 15. The base 15 and the probe 11
are configured as one unit. In the present embodiment, a conductive
material such as metal is used as the base 15 and the probe 11.
Silicon may be used as the base 15 and the probe 11.
[0043] Next, the insulating film 12 is formed on the surface of the
base 15 where the probe 11 is located, as illustrated in FIG. 5.
The insulating film 12 coats the surface of the probe 11. For
example, an insulating material such as a silicon dioxide film, a
silicon nitride film, an aluminum oxide, or an aluminum nitride is
used as the insulating film 12. The thickness of the insulating
film 12 is, for example, less than 100 nanometers.
[0044] Next, metal ions M.sup.+ are introduced into the insulating
film 12 coating the probe 11 as illustrated in FIGS. 6A and 6B.
FIG. 6B is an enlarged cross-sectional view of a tip portion of the
probe 11 illustrated in FIG. 6A. The metal ions M.sup.+ may be
introduced, for example, by any of the ion implantation method, a
plasma-immersion implantation method, plasma ion processing, and
the like (etc.). At this time, the metal ions M.sup.+ are implanted
from below the probe 11 in the opposite direction to the protruding
direction (the Z direction). That is, the metal ions M.sup.+ are
implanted in a direction opposing the probe 11. In this case, the
tip of the probe 11 is at a risk of being rounded due to the ion
implantation. The metal ions M.sup.+ may be implanted from the back
surface side of the base 15 on the opposite side to the probe 11.
That is, the metal ions M.sup.+ may penetrate the base 15 in the
opposite direction (the -Z direction) to the protruding direction
to be implanted into the insulating film 12. In this case, the tip
of the probe 11 is not scraped and is not rounded because the metal
ions M.sup.+ are introduced from the back surface of the base
15.
[0045] Next, the insulating film 12 on the tip of the probe 11 is
brought into contact with an electrode 101 as illustrated in FIGS.
7A and 7B. FIG. 7B is an enlarged cross-sectional view of the tip
portion of the probe 11 illustrated in FIG. 7A. The electrode 101
may be a conductive body mounted on the stage 20 instead of the
specimen 100.
[0046] Subsequently, an electric field is applied to the insulating
film 12, thereby concentrating the metal ions M.sup.+ in the
insulating film 12 at the tip of the probe 11 and forming the
metallic filament 13 in the insulating film 12. At this time, a
power source 75 is connected between the electrode 101 and the base
15 and a voltage between the electrode 101 and the base 15 is
applied.
[0047] The electrode 101 is a conductive body that is used to form
the metallic filament 13 being a conductive body, and is different
from the specimen 100 being a measurement target. The electrode 101
is brought into contact with the bottom surface of the insulating
film 12 at the tip of the probe 11. A voltage is then applied
between the probe 11 and the electrode 101. Accordingly, an
electric field is generated in the insulating film 12. The electric
field is strongest at the tip of the probe 11, and the metal ions
M.sup.+ are accumulated in the insulating film 12 between the tip
of the probe 11 and the electrode 101 by inverting the polarity of
the applied voltage at least two or more times. Thereafter, the
metal ions M.sup.+ combine with electrons supplied from the
electrode 101 to become the metal M and form a stable metallic
filament 13. That is, the metal ions M.sup.+ move to the insulating
film 12 between the tip of the probe 11 and the electrode 101 and
are concentrated therein, and thereafter become the metal M to be
the metallic filament 13 in a stable state. Accordingly, the
metallic filament 13 is formed so as to penetrate through the
insulating film 12 in the thickness direction of the insulating
film 12 at the tip of the probe 11. When the metallic filament 13
is formed of, for example, stable metal (noble metal) M such as
gold or platinum, the metallic filament 13 is unlikely to be
oxidized and is unlikely to move. In this case, the metallic
filament 13 is relatively less likely to be deteriorated (oxidized)
at a subsequent time of measurement of the electrical
characteristics or the thermal characteristics of the specimen
100.
[0048] In the formation process of the metallic filament 13, the
power source 75 inverts the polarity of the voltage applied to the
electrode 101 and the base 15 in some cases. Therefore, the power
source 75 is specified to be capable of inverting the polarity. The
power source 75 applies an electric field to the insulating film 12
while inverting the polarity between the +Z direction and the -Z
direction. The insulating film 12 may be broken if inversion of the
application direction of the electric field is excessively
repeated. Therefore, it is preferable to limit the number of times
of inversion of the polarity by the power source 75.
[0049] In the present embodiment, at the same time as application
of the electric field to the insulating film 12, the magnetic field
B is applied to the insulating film 12 as illustrated in FIGS. 8A
and 8B. FIGS. 8A and 8B are views illustrating a manner in which
the magnetic field B is applied to the insulating film 12. The
magnetic field generation device 110 passes a current through the
electromagnetic coil 112 provided around the stage 20 to generate
the magnetic field B. The pole piece 111 induces the magnetic field
B and applies the large magnetic field B to the insulating film 12
at the tip of the probe 11. Accordingly, the magnetic field B as
well as the electric field is applied to the metal ions M.sup.+ at
the tip of the probe 11. The magnetic field B is applied in the
vertical direction to the center of the probe 11. As a result, the
metal ions M.sup.+ are more effectively concentrated in the
insulating film 12 between the tip of the probe 11 and the
electrode 101 and combine with electrons to become the metal M and
form the stable metallic filament 13. The width (diameter) of the
metallic filament 13 exposed on the surface of the insulating film
12 is, for example, less than 5 nanometers. Accordingly, the
spatial resolution in the thermal characterization of the probe 11
of the SPM 1 is less than 5 nanometers.
[0050] In some cases, at the time of mounting the specimen 100 on
the stage 20 and measuring the electrical characteristics or the
thermal characteristics, the measurement is performed while a
voltage is applied between the probe 11 and the specimen 100.
Meanwhile, the magnetic field is not required after formation of
the metallic filament 13. Therefore, at the time of measuring the
thermal characteristics of the specimen 100, the magnetic field
generation device 110 is not required and may be detached from the
SPM 1.
[0051] The electrical characteristics or the thermal
characteristics of the specimen 100 can be measured based on
temperature changes of the electric characteristics (for example, a
resistance value) of the metallic filament 13.
[0052] As described above, according to the present embodiment, the
metal ions M.sup.+ are concentrated (accumulated) in the insulating
film 12 at the tip of the probe 11 by introducing the metal ions
M.sup.+ into the insulating film 12 of the probe 11 of the base 15
and applying an electric field or an electric field and a magnetic
field thereto. Accordingly, the filament 13 is formed by the
concentration of metal ions in the insulating film 12 between the
tip of the probe 11 and the specimen 100.
[0053] The metallic filament 13 is formed considerably thinly at
the tip of the probe 11 and has a high spatial resolution. When
metallic filament 13 is formed of, for example, stable metal such
as gold or platinum, the metallic filament 13 is stable and is
relatively less likely to deteriorate at the time of measurement of
the electrical characteristics or the thermal characteristics of
the specimen 100.
(Modification)
[0054] At the time of forming the metallic filament 13, the voltage
of the power source 75 may be gradually increased and the electric
field applied to the insulating film 12 may be gradually enhanced.
This also enables the metallic filament 13 to be formed to be
gradually concentrated in the tip of the probe 11.
Second Embodiment
[0055] FIG. 9A is a cross-sectional view illustrating an example of
a configuration of a filament and a measuring method according to a
second embodiment. FIG. 9B is an enlarged cross-sectional view of a
tip portion of the probe 11 illustrated in FIG. 9A.
[0056] In the second embodiment, a conductor film 14 coats the
insulating film 12 at the tip of the probe 11. The conductor film
14 is used as a measuring electrode at the time of measuring the
thermal characteristics of the specimen 100 in a case in which the
specimen 100 is insulative. The conductor film 14 may entirely coat
the insulating film 12 or may coat only the surface of the probe
11. The conductor film 14 may be formed on the insulating film 12
after the metallic filament 13 is formed. A forming method of the
metallic filament 13 is identical to that in the first embodiment.
Therefore, FIGS. 9A and 9B illustrate a manner at the time of
measuring the thermal characteristics of the specimen 100.
[0057] In a case in which the specimen 100 on the stage 20 is an
insulator, the conductor film 14 needs to be thus provided as a
measuring electrode on the side of the cantilever 10. Metal having
a high thermal conductivity, such as gold, silver, copper,
aluminum, or tungsten may be used as the conductor film 14. Other
substances such as diamond and diamond-like carbon may be used.
[0058] A power source 76 applies power between the conductor film
14 and the probe 11 at the time of measuring the thermal
characteristics of the specimen 100. The power source 76 may be a
power source different from the power source 75 used to form the
metallic filament 13 or may be the same power source.
[0059] The conductor film 14 may be formed on the insulating film
12 after the metallic filament 13 is formed at the tip of the probe
11 as illustrated in FIG. 7A.
[0060] Other configurations and manufacturing processes according
to the second embodiment may be identical to corresponding
configurations and manufacturing processes according to the first
embodiment. Accordingly, the second embodiment can attain identical
effects as those of the first embodiment.
Third Embodiment
[0061] FIG. 10A is a cross-sectional view illustrating an example
of a configuration of a filament and a measuring method according
to a third embodiment. FIG. 10B is an enlarged cross-sectional view
of a tip portion of the probe 11 illustrated in FIG. 10A.
[0062] In the third embodiment, the base 15 is a non-conductive
body. Therefore, a conductor film 16 is formed on the surface of
the probe 11 of the base 15. The conductor film 16 entirely coats
one surface of the base 15, on which the probe 11 is provided.
[0063] The insulating film 12 coats the conductor film 16. The
insulating film 12 may spread out of the conductor film 16 to be in
contact with the base 15. However, because the conductor film 16
needs to be electrically connected to the power source 75 for
formation of the metallic filament 13 and the power source 75 or 76
for measurement of the thermal characteristics, at least a part of
the conductor film 16 needs to be exposed from the insulating film
12.
[0064] The conductor film 16 replaces the base 15 in functioning as
an electrode at the time of forming the metallic filament 13.
Therefore, the conductor film 16 is formed on the bottom surface of
the base 15 in the formation process of the metallic filament 13.
The power source 75 illustrated in FIG. 7A is connected between the
conductor film 16 and the electrode 101. The power source 75
applies a voltage between the conductor film 16 and the electrode
101, whereby the metallic filament 13 is formed in the insulating
film 12. The forming method of the metallic filament 13 is
basically the same as that in the first embodiment. The conductor
film 16 may also be used as a measuring electrode at the time of
measuring the thermal characteristics of the specimen 100. That is,
the conductor film 16 is an electrode for forming the metallic
filament 13 and is also an electrode for measuring the
characteristics of the specimen 100.
[0065] The conductor film 14 is used as a measuring electrode
similarly to that in the second embodiment at the time of measuring
the thermal characteristics of the specimen 100 in a case in which
the specimen 100 is insulative. The conductor film 14 is
electrically insulated from the conductor film 16 by the insulating
film 12. The conductor film 14 may entirely coat the insulating
film 12 or may coat only the insulating film 12 on the surface of
the probe 11. The conductor film 14 may be formed on the insulating
film 12 after the metallic filament 13 is formed.
[0066] In a case in which the specimen 100 on the stage 20 is an
insulator and the base 15 is non-conductive, the conductor films 14
and 16 need to be thus provided as bipolar electrodes. The
conductor film 14 functions as a measuring electrode for measuring
the thermal characteristics of the specimen 100. The conductor film
16 functions as both an electrode for forming the metallic filament
13 and an electrode for measuring the characteristics of the
specimen 100.
[0067] For example, gold, silver, copper, aluminum, tungsten, and
other substances such as diamond and diamond-like carbon can be
used as the conductor film 14. For example, any metal selected from
a group consisting of gold (Au), platinum (Pt), zirconium (Zr),
iridium (Ir), tellurium (Te), bismuth (Bi), vanadium (V), tin (Sn),
indium (In), palladium (Pd), and rhodium (Rh), an alloy of any two
or more types of metal selected from the group, a nitride of any
metal selected from the group, a carbide of any metal selected from
the group, or a chalcogenide material of any metal selected from
the group is used as the conductor film 16.
[0068] The conductor film 16 may be formed on the surface of the
probe 11 of the base 15. After the conductor film 16 is formed on
the surface of the probe 11 of the base 15, the insulating film 12,
the conductor film 14, and the metallic filament 13 may be formed
in a similar manner to those in the second embodiment.
[0069] Other configurations and manufacturing processes according
to the third embodiment may be identical to corresponding
configurations and manufacturing processes according to the first
or second embodiment. Accordingly, the third embodiment can attain
identical effects as those of the first or second embodiment.
Fourth Embodiment
[0070] FIG. 11A is a cross-sectional view illustrating an example
of a configuration of a filament and a measuring method according
to a fourth embodiment. FIG. 11B is an enlarged cross-sectional
view of a tip portion of the probe 11 illustrated in FIG. 11A.
[0071] In the fourth embodiment, the base 15 is a non-conductive
body. Therefore, the conductor film 16 is formed on the surface of
the probe 11 of the base 15 similarly to the third embodiment.
Meanwhile, the conductor film 14 is not required in a case in which
the specimen 100 on the stage 20 is a conductive body. Therefore,
the conductor film 14 is not provided in the fourth embodiment.
[0072] The insulating film 12 is coated on the conductor film 16.
The insulating film 12 may spread out of the conductor film 16 to
be in contact with the base 15. However, because the conductor film
16 needs to be electrically connected to the power source 75
illustrated in FIG. 7A or the power source 76 illustrated in FIG.
11A, at least a part of the conductor film 16 needs to be exposed
from the insulating film 12. The conductor film 16 functions as
both an electrode for forming the metallic filament 13 and an
electrode for measuring the electrical characteristics and the
thermal characteristics of the specimen 100 similarly to that in
the third embodiment.
[0073] In a case in which the electrode 101 being a conductive body
is mounted on the stage 20 and the base 15 is non-conductive, the
conductor film 16 needs to be provided in this manner as an
electrode.
[0074] The conductor film 16 may be formed on the surface of the
probe 11 of the base 15 as illustrated in FIG. 4. After the
conductor film 16 is formed on the surface of the probe 11 of the
base 15, the insulating film 12 and the metallic filament 13 may be
formed in a similar manner to those in the first embodiment.
[0075] To form the metallic filament 13, the electrode 101
illustrated in FIG. 7B is provided in addition to the conductor
film 16, and the power source 75 is connected between the electrode
101 and the conductor film 16. Using the electrode 101 and the
conductor film 16 as the electrodes, the power source 75 applies an
electric field to the insulating film 12 between the electrode 101
and the conductor film 16 at the tip of the probe 11. Further, the
magnetic field generation device 110 illustrated in FIGS. 8A and 8B
may be provided in the fourth embodiment to apply a magnetic field
as well as an electric field to the insulating film 12. This
enables an electric field or an electric field and a magnetic field
to be applied to the metal ions M.sup.+of the insulating film 12 on
the probe 11. As a result, the filament 13 is formed by the
concentration of metal ions in the insulating film 12 between the
tip of the probe 11 and the specimen 100 as illustrated in FIG.
9B.
[0076] Other configurations and manufacturing processes according
to the fourth embodiment may be identical to corresponding
configurations and manufacturing processes according to the first
or third embodiment. Accordingly, the fourth embodiment can attain
identical effects as those of the first or third embodiment.
[0077] While certain embodiments have been described, these
embodiments have been presented by way of example only, and are not
intended to limit the scope of the inventions. Indeed, the novel
methods and systems described herein may be embodied in a variety
of other forms; furthermore, various omissions, substitutions and
changes in the form of the methods and systems described herein may
be made without departing from the spirit of the inventions. The
accompanying claims and their equivalents are intended to cover
such forms or modifications as would fall within the scope and
spirit of the inventions.
* * * * *