U.S. patent application number 16/680965 was filed with the patent office on 2021-05-13 for stacked vertical transistor memory cell with epi connections.
The applicant listed for this patent is INTERNATIONAL BUSINESS MACHINES CORPORATION. Invention is credited to Kangguo Cheng, Heng Wu, Tenko Yamashita, Chen Zhang.
Application Number | 20210143159 16/680965 |
Document ID | / |
Family ID | 1000005550562 |
Filed Date | 2021-05-13 |
United States Patent
Application |
20210143159 |
Kind Code |
A1 |
Zhang; Chen ; et
al. |
May 13, 2021 |
STACKED VERTICAL TRANSISTOR MEMORY CELL WITH EPI CONNECTIONS
Abstract
A semiconductor device includes a stacked transistor memory
cell. The stacked transistor memory cell includes a bottom tier
including a plurality of bottom transistors including at least one
non-floating transistor and at least one floating transistor. The
at least one floating transistor has at least one terminal being
electrically disconnected from other transistors of the stacked
transistor memory cell. The stacked transistor memory cell further
includes a top tier including a at least one top transistor, and a
cross-coupling including epitaxial region (epi) connections and
gate to epi connections between the top tier and the bottom
tier.
Inventors: |
Zhang; Chen; (Albany,
NY) ; Yamashita; Tenko; (Schenectady, NY) ;
Cheng; Kangguo; (Schenectady, NY) ; Wu; Heng;
(Guilderland, NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
Armonk |
NY |
US |
|
|
Family ID: |
1000005550562 |
Appl. No.: |
16/680965 |
Filed: |
November 12, 2019 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 29/0847 20130101;
H01L 21/823885 20130101; H01L 23/5286 20130101; H01L 27/0922
20130101; H01L 21/823814 20130101; H01L 21/823871 20130101; H01L
21/8221 20130101; H01L 27/0688 20130101; H01L 29/7827 20130101;
H01L 29/7841 20130101; H01L 27/1104 20130101 |
International
Class: |
H01L 27/11 20060101
H01L027/11; H01L 27/06 20060101 H01L027/06; H01L 27/092 20060101
H01L027/092; H01L 23/528 20060101 H01L023/528; H01L 29/08 20060101
H01L029/08; H01L 29/78 20060101 H01L029/78; H01L 21/822 20060101
H01L021/822; H01L 21/8238 20060101 H01L021/8238 |
Claims
1. A semiconductor device comprising: a stacked transistor memory
cell including: a bottom tier including a plurality of bottom
transistors including at least one non-floating transistor and at
least one floating transistor, the at least one floating transistor
having at least one terminal being electrically disconnected from
other transistors of the stacked transistor memory cell; a top tier
including at least one top transistor; and a cross-coupling
including epitaxial region (epi) connections and gate to epi
connections between the top tier and the bottom tier.
2. The device of claim 1, wherein: the stacked transistor memory
cell is a stacked vertical transistor memory cell; the plurality of
bottom transistors includes a plurality of bottom vertical
transistors having a merged top source/drain epi, the plurality of
bottom vertical transistors including first non-floating and
floating transistors, and second non-floating and floating
transistors; and the plurality of top vertical transistors includes
first, second, third and fourth top vertical transistors having a
merged bottom source/drain epi.
3. The device of claim 2, wherein the cross-coupling includes: epi
connections by the merged top source/drain epi between the first
non-floating and floating transistors, and the second non-floating
and floating transistors; epi connections by the merged bottom
source/drain epi between the first and third top vertical
transistors, and the second and fourth top vertical transistors;
gate to epi connections by metal between the first non-floating
transistor and the second non-floating transistor, and the second
non-floating transistor and the first floating transistor; and gate
to epi connections by metal between the first and second top
vertical transistors, and the third and fourth top vertical
transistors.
4. The device of claim 2, wherein the plurality of bottom vertical
transistors include n-type field-effect transistors (nFETs) and the
plurality of top vertical transistors include p-type field-effect
transistors (pFETs).
5. The device of claim 2, wherein the plurality of bottom vertical
transistors further includes respective bottom source/drain epis
and the plurality of top vertical transistors further includes
respective top source/drain epis.
6. The device of claim 5, further comprising dielectric layers
separating the bottom source/drain epis and the top source/drain
epis, and isolation layers separating the bottom tier and the top
tier.
7. The device of claim 1, further comprising wordline, bitline,
supply voltage and ground contacts.
8. The device of claim 1, wherein the cross-coupling further
contacts gate structures of the bottom and top tiers.
9. A semiconductor device comprising: a stacked vertical transistor
memory cell including: a bottom tier including a plurality of
bottom vertical transistors including n-type field-effect
transistors (nFETs) having a merged top source/drain epitaxial
region (epi), and gate structures, the plurality of bottom vertical
transistors including first and second non-floating transistors and
first and second floating transistors, wherein the first and second
floating transistors have at least one terminal being electrically
disconnected from other transistors of the stacked vertical
transistor memory cell; a top tier including a plurality of top
vertical transistors including p-type field-effect transistors
(pFETs) having a merged bottom source/drain epi, and gate
structures, the plurality of top vertical transistors including
first, second, third and fourth top vertical transistors; and a
cross-coupling contacting the gate structures of the bottom and top
tiers, including: epi connections by the merged top source/drain
epi between the first non-floating and floating transistors, and
the second non-floating and floating transistors; epi connections
by the merged bottom source/drain epi between the first and third
top vertical transistors, and the second and fourth top vertical
transistors; gate to epi connections by metal between the first
non-floating and second floating transistors, and the second
non-floating and first floating transistors; and gate to epi
connections by metal between the first and second top vertical
transistors, and the third and fourth top vertical transistors.
10. The device of claim 9, wherein the plurality of bottom vertical
transistors further includes respective bottom source/drain epis
and the plurality of top vertical transistors further includes
respective top source/drain epis.
11. The device of claim 10, further comprising dielectric layers
separating the bottom source/drain epis and the top source/drain
epis, and isolation layers separating the bottom tier and the top
tier.
12. The device of claim 9, further comprising wordline, bitline,
supply voltage and ground contacts.
13. A method for fabricating a semiconductor device, comprising:
forming a stacked transistor memory cell including a bottom tier
having a plurality of bottom transistors including at least one
non-floating transistor and at least one floating transistor and a
top tier having at least one top transistor, the at least one
floating transistor having at least one terminal being electrically
disconnected from other transistors of the stacked vertical
transistor memory cell, wherein forming the stacked transistor
memory cell includes: forming a cross-coupling including epitaxial
region (epi) connections and gate to epi connections between the
top tier and the bottom tier.
14. The method of claim 13, wherein: the stacked transistor memory
cell is a stacked vertical transistor memory cell; the plurality of
bottom transistors includes a plurality of bottom vertical
transistors having a merged top source/drain epi, the plurality of
bottom vertical transistors including first non-floating and
floating transistors, and second non-floating and floating
transistors; and the plurality of top vertical transistors includes
first, second, third and fourth top vertical transistors having a
merged bottom source/drain epi.
15. The method of claim 14, wherein forming the cross-coupling
further includes: forming epi connections by the merged top
source/drain epi between the first non-floating and floating
transistors, and the second non-floating and floating transistors;
forming epi connections by the merged bottom source/drain epi
between the first and third top vertical transistors, and the
second and fourth top vertical transistors; forming gate to epi
connections by metal between the first non-floating and second
floating transistors, and the second non-floating and first
floating transistors; and forming gate to epi connections by metal
between the first and second top vertical transistors, and the
third and fourth top vertical transistors.
16. The method of claim 14, wherein the plurality of bottom
vertical transistors include n-type field-effect transistors
(nFETs) and the plurality of top vertical transistors include
p-type field-effect transistors (pFETs).
17. The method of claim 14, wherein the plurality of bottom
vertical transistors further includes respective bottom
source/drain epis and the plurality of top vertical transistors
further includes respective top source/drain epis.
18. The method of claim 17, wherein the bottom source/drain epis
and the top source/drain epis are separated by dielectric layer,
and wherein the bottom tier and the top tier are separated by
isolation layers.
19. The method of claim 13, wherein the stacked vertical transistor
device further includes wordline, bitline, supply voltage and
ground contacts.
20. The method of claim 13, wherein forming the cross-coupling
further includes contacting gate structures of the bottom and top
tiers.
Description
BACKGROUND
[0001] The present invention generally relates to semiconductor
devices, and more particularly to stacked vertical transistor
memory cells and methods of forming the same.
[0002] Vertical transistors, such as vertical field-effect
transistors (FETs), have been devised as a way to reduce contact
poly pitch (CPP) to decrease unit cell size and increase efficiency
by orienting current flow vertically. Further, since the ohmic
contacts and the channels are aligned vertically, contact density
per unit of surface area of a vertical transistor is higher than in
a lateral transistor.
SUMMARY
[0003] In accordance with an embodiment of the present invention, a
semiconductor device is provided. The device includes a stacked
transistor memory cell. The stacked transistor memory cell includes
a bottom tier including a plurality of bottom transistors including
at least one non-floating transistor and at least one floating
transistor. The at least one floating transistor has at least one
terminal being electrically disconnected from other transistors of
the stacked transistor memory cell. The stacked transistor memory
cell further includes a top tier including a at least one top
transistor, and a cross-coupling including epitaxial region (epi)
connections and gate to epi connections between the top tier and
the bottom tier.
[0004] In accordance with another embodiment of the present
invention, a semiconductor device is provided. The device includes
a stacked vertical transistor memory cell. The stacked vertical
transistor memory cell includes a bottom tier including a plurality
of bottom vertical transistors including n-type field-effect
transistors (nFETs) having a merged top source/drain epitaxial
region (epi), and gate structures. The plurality of bottom vertical
transistors include first and second non-floating transistors and
first and second floating transistors. The first and second
floating transistors have at least one terminal being electrically
disconnected from other transistors of the stacked vertical
transistor memory cell. The stacked vertical transistor memory cell
further includes a top tier including a plurality of top vertical
transistors including p-type field-effect transistors (pFETs)
having a merged bottom source/drain epi, and gate structures. The
plurality of top vertical transistors including first, second,
third and fourth top vertical transistors. The stacked vertical
transistor memory cell further includes a cross-coupling contacting
the gate structures of the bottom and top tiers. The cross-coupling
includes epi connections by the merged top source/drain epi between
the first non-floating and floating transistors, and the second
non-floating and floating transistors, epi connections by the
merged bottom source/drain epi between the first and third top
vertical transistors, and the second and fourth top vertical
transistors, gate to epi connections by metal between the first
non-floating and second floating transistors, and the second
non-floating and first floating transistors, and gate to epi
connections by metal between the first and second top vertical
transistors, and the third and fourth top vertical transistors.
[0005] In accordance with yet another embodiment of the present
invention, a method for fabricating a semiconductor device is
provided. The method includes forming a stacked transistor memory
cell including a bottom tier having a plurality of bottom
transistors including at least one non-floating transistor and at
least one floating transistor and a top tier having at least one
top transistor. The at least one floating transistor has at least
one terminal being electrically disconnected from other transistors
of the stacked vertical transistor memory cell. Forming the stacked
transistor memory cell includes forming a cross-coupling including
epitaxial region (epi) connections and gate to epi connections
between the top tier and the bottom tier.
[0006] These and other features and advantages will become apparent
from the following detailed description of illustrative embodiments
thereof, which is to be read in connection with the accompanying
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] The following description will provide details of preferred
embodiments with reference to the following figures wherein:
[0008] FIG. 1 is a schematic diagram of a memory cell, in
accordance with an embodiment of the present invention;
[0009] FIG. 2 is a top-down view of a stacked vertical transistor
memory cell, in accordance with an embodiment of the present
invention;
[0010] FIG. 3 is a cross-sectional view of the memory cell of FIG.
2, in accordance with an embodiment of the present invention;
[0011] FIG. 4 is another cross-sectional view of the memory cell of
FIG. 2, in accordance with an embodiment of the present
invention;
[0012] FIG. 5 is a top-down view of sacrificial layers etched
during the fabrication of a semiconductor device, in accordance
with an embodiment of the present invention;
[0013] FIG. 6 is a cross-sectional view of the semiconductor device
shown in FIG. 5, in accordance with an embodiment of the present
invention;
[0014] FIG. 7 is another cross-sectional view of the semiconductor
device shown in FIG. 5, in accordance with an embodiment of the
present invention;
[0015] FIG. 8 is a cross-sectional view of the formation of bottom
source/drain regions in the top tier of the semiconductor device
during the fabrication of the semiconductor device, in accordance
with an embodiment of the present invention;
[0016] FIG. 9 is another cross-sectional view of the formation of
bottom source/drain regions in the top tier of the semiconductor
device during the fabrication of the semiconductor device, in
accordance with an embodiment of the present invention;
[0017] FIG. 10 is a cross-sectional view of the formation of top
transistors and an interlayer dielectric (ILD) layer during the
fabrication of the semiconductor device, in accordance with another
embodiment of the present invention;
[0018] FIG. 11 is another cross-sectional view of the formation of
top transistors and an interlayer dielectric (ILD) layer during the
fabrication of the semiconductor device, in accordance with another
embodiment of the present invention;
[0019] FIG. 12 is a cross-sectional view of etching performed to
expose the sacrificial layers during the fabrication of the
semiconductor device, in accordance with another embodiment of the
present invention;
[0020] FIG. 13 is another cross-sectional view of etching performed
to expose the sacrificial layers during the fabrication of the
semiconductor device, in accordance with another embodiment of the
present invention;
[0021] FIG. 14 is a cross-sectional view of the removal of the
sacrificial layers to form cross-couple openings during the
fabrication of the semiconductor device, in accordance with another
embodiment of the present invention;
[0022] FIG. 15 is another cross-sectional view of the removal of
the sacrificial layers to form cross-couple openings during the
fabrication of the semiconductor device, in accordance with another
embodiment of the present invention;
[0023] FIG. 16 is a cross-sectional view of the formation of
conductive material in the cross-couple openings to form a
cross-coupling during the fabrication of the semiconductor device,
in accordance with another embodiment of the present invention;
[0024] FIG. 17 is another cross-sectional view of the formation of
conductive material in the cross-couple openings to form a
cross-coupling during the fabrication of the semiconductor device,
in accordance with an embodiment of the present invention; and
[0025] FIG. 18 is a block/flow diagram illustrating a system/method
for fabricating a semiconductor device, in accordance with another
embodiment of the present invention.
DETAILED DESCRIPTION
[0026] The embodiments described herein provide for a stacked
transistor memory cell in a stacked three-dimensional (3D)
transistor architecture. The stacked transistor memory cell can
include floating and non-floating transistors. As used herein, a
floating transistor of a memory cell is a transistor that has at
least one terminal (e.g., at least one of a source/drain,
drain/source and gate) being electrically disconnected or isolated
from other transistors of the memory cell, and none of the
terminals represent an interface of the memory cell to the outside
(e.g., wordline (WL), bitline (BL), supply voltage (VDD) and ground
(GND)). A non-floating transistor of a memory cell is a transistor
that is not a floating transistor. That is, each of the terminals
of a non-floating transistor either connects to other transistors
in the memory cell, or represents an interface of the memory cell
to the outside.
[0027] The stacked transistor memory cell formed in accordance with
the embodiments described herein includes a top tier and a bottom
tier each having respective transistors. The top tier can
illustratively include p-type transistors (e.g., pFETs) and the
bottom tier can include n-type transistors (e.g., nFETs). For
example, a top tier transistor (e.g., pFET) can be used as a
pass-gate.
[0028] In one embodiment, the stacked transistor memory cell is a
stacked vertical transistor memory cell. More specifically, the
stacked vertical transistor memory cell can include vertical
transport FETs (VTFETs). A merged bottom epitaxial region ("epi")
in the top tier can be used to connect the pass gate to a first
inverter (e.g., pFET) drain. The transistor directly below the pass
gate (e.g., nFET) can include a floating gate and a bottom
source/drain, and can have its top epi merged to the top of the epi
(drain) of a second inverter (e.g., nFET). A cross-couple contact
can connect the gates of an inverter, which can directly contact
the pass gate bottom epi and the floating transistor top epi.
[0029] In accordance with aspects of the present invention, the
integration of the stacked transistor memory cell within the 3D
monolithic scheme provides a variety of benefits, such as with
respect to logic. For example, one or more of the following
benefits can be realized: (1) tighter packing of circuits so that
back-end-of-the-line (BEOL) wire length is reduced for power and
performance benefit; and (2) higher drive strength in a given areal
footprint.
[0030] Exemplary applications/uses to which the present invention
can be applied include, but are not limited to, fabricating memory
devices. For example, embodiments of the present invention can be
applied to the fabrication of a static random-access memory (SRAM)
device formed from SRAM cells. As is known in the art, an SRAM cell
is composed of transistors, which can include
metal-oxide-semiconductor FETs (MOSFETs). For example, in a six
transistor SRAM cell (i.e., a 6T SRAM cell), each bit is stored on
four transistors that form cross-coupled inverters, and the other
two transistors are access transistors that control access to a
storage cell during read and write operations. In the 6T SRAM cell
embodiment discussed herein, the top tier can include four p-type
transistors, and the bottom tier can include two n-type
transistors. For example, the top tier could can include two
pass-gates. However, such embodiments are not limiting. For
example, in an alternative embodiment, the top tier can include
n-type transistors and the bottom tier can include n-type
transistors.
[0031] It is to be understood that aspects of the present invention
will be described in terms of a given illustrative architecture;
however, other architectures, structures, substrate materials and
process features and steps can be varied within the scope of
aspects of the present invention.
[0032] It will also be understood that when an element such as a
layer, region or substrate is referred to as being "on" or "over"
another element, it can be directly on the other element or
intervening elements can also be present. In contrast, when an
element is referred to as being "directly on" or "directly over"
another element, there are no intervening elements present. It will
also be understood that when an element is referred to as being
"connected" or "coupled" to another element, it can be directly
connected or coupled to the other element or intervening elements
can be present. In contrast, when an element is referred to as
being "directly connected" or "directly coupled" to another
element, there are no intervening elements present.
[0033] The present embodiments can include a design for an
integrated circuit chip, which can be created in a graphical
computer programming language, and stored in a computer storage
medium (such as a disk, tape, physical hard drive, or virtual hard
drive such as in a storage access network). If the designer does
not fabricate chips or the photolithographic masks used to
fabricate chips, the designer can transmit the resulting design by
physical means (e.g., by providing a copy of the storage medium
storing the design) or electronically (e.g., through the Internet)
to such entities, directly or indirectly. The stored design is then
converted into the appropriate format (e.g., GDSII) for the
fabrication of photolithographic masks, which can include multiple
copies of the chip design in question that are to be formed on a
wafer. The photolithographic masks are utilized to define areas of
the wafer (and/or the layers thereon) to be etched or otherwise
processed.
[0034] Methods as described herein can be used in the fabrication
of integrated circuit chips. The resulting integrated circuit chips
can be distributed by the fabricator in raw wafer form (that is, as
a single wafer that has multiple unpackaged chips), as a bare die,
or in a packaged form. In the latter case, the chip is mounted in a
single chip package (such as a plastic carrier, with leads that are
affixed to a motherboard or other higher-level carrier) or in a
multichip package (such as a ceramic carrier that has either or
both surface interconnections or buried interconnections). In any
case, the chip is then integrated with other chips, discrete
circuit elements, and/or other signal processing devices as part of
either (a) an intermediate product, such as a motherboard, or (b)
an end product. The end product can be any product that includes
integrated circuit chips, ranging from toys and other low-end
applications to advanced computer products having a display, a
keyboard or other input device, and a central processor.
[0035] It should also be understood that material compounds will be
described in terms of listed elements, e.g., SiGe. These compounds
include different proportions of the elements within the compound,
e.g., SiGe includes Si.sub.xGe.sub.1-x where x is less than or
equal to 1, etc. In addition, other elements can be included in the
compound and still function in accordance with the present
principles. The compounds with additional elements will be referred
to herein as alloys.
[0036] Reference in the specification to "one embodiment" or "an
embodiment", as well as other variations thereof, means that a
particular feature, structure, characteristic, and so forth
described in connection with the embodiment is included in at least
one embodiment. Thus, the appearances of the phrase "in one
embodiment" or "in an embodiment", as well any other variations,
appearing in various places throughout the specification are not
necessarily all referring to the same embodiment.
[0037] It is to be appreciated that the use of any of the following
"/", "and/or", and "at least one of", for example, in the cases of
"A/B", "A and/or B" and "at least one of A and B", is intended to
encompass the selection of the first listed option (A) only, or the
selection of the second listed option (B) only, or the selection of
both options (A and B). As a further example, in the cases of "A,
B, and/or C" and "at least one of A, B, and C", such phrasing is
intended to encompass the selection of the first listed option (A)
only, or the selection of the second listed option (B) only, or the
selection of the third listed option (C) only, or the selection of
the first and the second listed options (A and B) only, or the
selection of the first and third listed options (A and C) only, or
the selection of the second and third listed options (B and C)
only, or the selection of all three options (A and B and C). This
can be extended, as readily apparent by one of ordinary skill in
this and related arts, for as many items listed.
[0038] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
example embodiments. As used herein, the singular forms "a," "an"
and "the" are intended to include the plural forms as well, unless
the context clearly indicates otherwise. It will be further
understood that the terms "comprises," "comprising," "includes"
and/or "including," when used herein, specify the presence of
stated features, integers, steps, operations, elements and/or
components, but do not preclude the presence or addition of one or
more other features, integers, steps, operations, elements,
components and/or groups thereof.
[0039] Spatially relative terms, such as "beneath," "below,"
"lower," "above," "upper," and the like, can be used herein for
ease of description to describe one element's or feature's
relationship to another element(s) or feature(s) as illustrated in
the FIGS. It will be understood that the spatially relative terms
are intended to encompass different orientations of the device in
use or operation in addition to the orientation depicted in the
FIGS. For example, if the device in the FIGS. is turned over,
elements described as "below" or "beneath" other elements or
features would then be oriented "above" the other elements or
features. Thus, the term "below" can encompass both an orientation
of above and below. The device can be otherwise oriented (rotated
90 degrees or at other orientations), and the spatially relative
descriptors used herein can be interpreted accordingly. In
addition, it will also be understood that when a layer is referred
to as being "between" two layers, it can be the only layer between
the two layers, or one or more intervening layers can also be
present.
[0040] It will be understood that, although the terms first,
second, etc. can be used herein to describe various elements, these
elements should not be limited by these terms. These terms are only
used to distinguish one element from another element. Thus, a first
element discussed below could be termed a second element without
departing from the scope of the present concept.
[0041] Referring now to the drawings in which like numerals
represent the same or similar elements and initially to FIG. 1, a
schematic diagram of a memory cell 100 is provided.
[0042] The memory cell 100 includes a stacked transistor memory
cell having a plurality of transistors. In an illustrative
embodiment, the memory cell 100 includes a stacked vertical
transistor memory cell having a plurality of vertical
transistors.
[0043] The memory cell 100 can include floating and non-floating
transistors. The floating transistors can have at least one
terminal (e.g., at least one of a source/drain, drain/source and
gate) being electrically disconnected from other ones of the
transistors. For example, as shown, the memory cell 100 includes
eight transistors, including a set of transistors 102-1 through
102-4 and a set of transistors 104-1 through 104-4. In this
illustrative embodiment, the plurality of transistors can include
field-effect transistors (FETs). In one embodiment, the set of
transistors 102-1 through 102-4 include p-type FETs (pFETs) and the
set of transistors 104-1 through 104-4 include n-type FETs (nFETS).
However, such an embodiment should not be considered limiting.
Transistors 140-2 and 140-3, which are indicated by a dashed line,
correspond to floating transistors (e.g., floating nFETs).
[0044] As further shown, a plurality of connections between
respective ones of the plurality of transistors is shown. More
specifically, a cross-coupling is realized by epitaxial region
("epi") connections and gate-to-epi connections.
[0045] More specifically, the dash-dot line 110-1 corresponds to a
merged bottom epi connection between a source/drain of the
transistor 102-2 and a source/drain of the transistor 102-4 and the
dash-dot line 110-2 corresponds to a merged bottom epi connection
between a source/drain of the transistor 102-1 and a source/drain
of the transistor 102-3 (e.g., merged pFET bottom epi
connections).
[0046] The pure dotted line 120-1 corresponds to a merged top epi
connection between a drain/source of the transistor 104-2 and a
drain/source of the transistor 104-4 and the pure dotted line 120-2
corresponds to a merged top epi connection between a drain/source
of the transistor 104-1 and a drain/source of the transistor 104-3
(e.g., merged nFET top epi connections).
[0047] The solid line 130-1 corresponds to a gate-epi connection by
metal between the source/drain of the transistor 102-2 to the gates
of the transistors 102-1 and 104-1, the solid line 130-2
corresponds to a gate-epi connection by metal between the
drain/source of the transistor 104-2 and the gate of the
transistors 102-1 and 104-1, the solid line 140-1 corresponds to a
gate-epi connection by metal between the source/drain of the
transistor 102-3 and the gate of the transistors 102-4 and 104-4,
and the solid line 140-2 correspond to a gate-to-epi connection by
metal between the drain/source of the transistor 104-3.
[0048] As further shown, the memory cell 100 includes a plurality
of lines. More specifically, a ground (GND) line 150-1 is coupled
to a source/drain of the transistor 104-1 and a GND line 150-2 is
coupled to a source/drain of the transistor 104-4. A supply voltage
(VDD) line 160-1 is coupled to a drain/source of the transistor
102-1 and a VDD line 160-2 is coupled to a drain/source of the
transistor 102-4. A wordline (WL) line 170-1 is coupled to the gate
of the transistor 102-2 and a WL line 170-2 is coupled to the gate
of the transistor 102-3. A bitline (BL) line 180-1 is coupled to a
drain/source of the transistor 102-3 and a complementary bitline
(.about.BL) line 180-2 is coupled to a drain/source of the
transistor 102-2.
[0049] With reference to FIG. 2, a top-down view of a stacked
transistor memory cell 200 having an upper tier 202 and a lower
tier 204 is provided. In this illustrative example, the memory cell
200 is a stacked vertical transistor memory cell including eight
transistors (e.g., FETs), although the number of transistor should
not be considered limiting. The memory cell 200 can represent the
memory cell 100 of FIG. 1. For the sake of simplicity, some
components of the memory cell 200 (e.g., gate material, top and
bottom epitaxial regions ("epis"), and sacrificial layers for
making contact) are not shown in FIG. 2.
[0050] The memory cell 200 can include floating and non-floating
transistors. The floating transistors can have at least one
terminal (e.g., at least one of a source/drain, drain/source and
gate) being electrically disconnected from other ones of the
transistors.
[0051] For example, as shown, the memory cell 200 can include a
plurality of fins corresponding to the plurality of transistors,
including fins 206-2 through 206-8. The plurality of fins can
include any suitable material in accordance with the embodiments
described herein.
[0052] As further shown, the memory cell 200 can include a
plurality of contacts, including GND contacts 210-1 and 210-2, VDD
contacts 212-1 and 212-2, WL contacts 214-1 and 214-2, BL contact
216-1 and .about.BL contact 216-2. As further shown, the memory
cell 200 can include cross-couple connections 218-1 and 218-2. As
discussed above with reference to FIG. 1, the cross-couple
connections can result epi connections and gate-to-epi connections
by metal between the plurality of transistors. Cross-sectional
views of the memory cell 200 through line A-A' and line B-B' will
be described below with reference to FIGS. 3 and 4,
respectively.
[0053] With reference to FIGS. 3 and 4, cross-sectional views of
the memory cell 200 of FIGS. 2 and 3 are provided. More
specifically, FIG. 3 depicts a cross-sectional view through line
A-A' of FIG. 2, and FIG. 4 depicts a cross-sectional view through
line B-B' of FIG. 2.
[0054] As shown, the memory cell 200 includes a substrate 220
having multiple layers formed thereon. The substrate 220 can
include any suitable substrate structure, e.g., a bulk
semiconductor, a semiconductor-on-insulator (SOI) substrate, etc.
In one example, the substrate 220 can include a silicon-containing
material. Illustrative examples of Si-containing materials suitable
for the substrate 220 can include, but are not limited to, Si,
SiGe, SiGeC, SiC and multi-layers thereof. Although silicon is the
predominantly used semiconductor material in wafer fabrication,
alternative semiconductor materials can be employed as additional
layers, such as, but not limited to, germanium, gallium arsenide,
gallium nitride, silicon germanium, cadmium telluride, zinc
selenide, etc.
[0055] The memory cell 200 further includes fins 206-1 through
206-3 and 206-5 through 206-7, VDD line 212-1 and BL line 216-1, as
described above with reference to FIG. 2. The fins 206-5 through
206-7 correspond to bottom FETs, and the fins 206-1 through 206-3
correspond to top FETs. Each of the FETs can further include a gate
dielectric 208 and a gate conductor 209. The gate dielectrics 208
and the gate conductors 209 can include any suitable materials in
accordance with the embodiments described herein.
[0056] For example, the gate dielectrics 208 can include a high-k
dielectric material. As used herein, "high-k" denotes a dielectric
material featuring a dielectric constant (k) greater than the
dielectric constant of SiO.sub.2 at room temperature (20.degree.
C.-25.degree. C.) and atmospheric pressure (1 atm). In one
embodiment, gate dielectrics 208 can include a high-k oxide such
as, for example, HfO.sub.2, ZrO.sub.2, Al.sub.2O.sub.3, TiO.sub.2,
La.sub.2O.sub.3, SrTiO.sub.3, LaAlO.sub.3, Y.sub.2O.sub.3 and
mixtures thereof. Other examples of high-k dielectric materials for
the at gate dielectrics 208 include hafnium silicate, hafnium
silicon oxynitride or combinations thereof.
[0057] Examples of suitable conductive materials for the gate
conductors 209 include, but not limited to metals, metal alloys,
metal nitrides and metal silicides, as well as laminates thereof
and composites thereof. In one embodiment, the gate conductors 209
can include any conductive metal including, but not limited to W,
Ni, Ti, Mo, Ta, Cu, Pt, Ag, Au, Ru, Jr, Rh, and Re, and alloys that
include at least one of the aforementioned conductive elemental
metals. The gate conductors 209 can also include doped polysilicon
and/or polysilicon-germanium alloy materials (i.e., having a dopant
concentration from 1.times.10.sup.18 dopant atoms per cubic
centimeter to 1.times.10.sup.22 dopant atoms per cubic centimeter)
and polycide materials (doped polysilicon/metal silicide stack
materials). For example, the gate conductors 209 can include a
work-function metal (WFM).
[0058] In one embodiment, the gate dielectrics 208 and/or the gate
conductors 209 can be deposited by chemical vapor deposition (CVD).
Variations of CVD processes suitable for depositing the at least
one gate dielectric layer include, but are not limited to, APCVD,
LPCVD, PECVD, MOCVD, ALD, and combinations thereof.
[0059] The memory cell 200 further includes bottom epitaxial
("epi") regions 222-1 through 222-5 corresponding to bottom
source/drain regions. More specifically, the memory cell 200
includes a merged bottom epi region 222-1 of the FETs corresponding
to fins 206-1 and 206-2, and bottom epi regions 222-2 through 222-5
of the FETs corresponding to fins 206-5, 206-6, 206-3 and 206-7,
respectively.
[0060] The memory cell 200 further includes top epi regions 224-1
through 224-6 corresponding tot top source/drain regions. More
specifically, the memory cell 200 includes a merged top epi region
224-1 of the FETS corresponding to fins 206-5 and 206-6, and top
epi regions 224-2 through 224-6 of the FETs corresponding to fins
206-1, 206-2, 206-5, 206-3 and 206-7, respectively.
[0061] The epi region 222-1 through 222-5 and 224-1 through 224-6
can include any suitable materials in accordance with the
embodiments described herein.
[0062] The terms "epitaxial growth and/or deposition" and
"epitaxially formed and/or grown," mean the growth of a
semiconductor material (crystalline material) on a deposition
surface of another semiconductor material (crystalline material),
in which the semiconductor material being grown (crystalline over
layer) has substantially the same crystalline characteristics as
the semiconductor material of the deposition surface (seed
material). In an epitaxial deposition process, the chemical
reactants provided by the source gases are controlled, and the
system parameters are set so that the depositing atoms arrive at
the deposition surface of the semiconductor substrate with
sufficient energy to move about on the surface such that the
depositing atoms orient themselves to the crystal arrangement of
the atoms of the deposition surface. Therefore, an epitaxially
grown semiconductor material has substantially the same crystalline
characteristics as the deposition surface on which the epitaxially
grown material is formed. For example, an epitaxially grown
semiconductor material deposited on a {100} orientated crystalline
surface will take on a {100} orientation. In some embodiments,
epitaxial growth and/or deposition processes are selective to
forming on semiconductor surface, and generally do not deposit
material on exposed surfaces, such as silicon dioxide or silicon
nitride surfaces.
[0063] Source/drain epitaxy can be done by ultrahigh vacuum
chemical vapor deposition (UHVCVD), rapid thermal chemical vapor
deposition (RTCVD), metalorganic chemical vapor deposition (MOCVD),
low-pressure chemical vapor deposition (LPCVD), limited reaction
processing CVD (LRPCVD), molecular beam epitaxy (MBE). Epitaxial
materials may be grown from gaseous or liquid precursors. Epitaxial
materials may be grown using vapor-phase epitaxy (VPE),
molecular-beam epitaxy (MBE), liquid-phase epitaxy (LPE), or other
suitable process. Epitaxial silicon, silicon germanium (SiGe),
and/or carbon doped silicon (Si:C) silicon can be doped during
deposition (in-situ doped) by adding dopants, n-type dopants (e.g.,
phosphorus or arsenic) or p-type dopants (e.g., boron or gallium),
depending on the type of transistor. The dopant concentration in
the source/drain can range from about 1.times.10.sup.19 cm.sup.-3
to about 2.times.10.sup.21 cm.sup.3, or preferably between
2.times.10.sup.20 cm.sup.-3 and 1.times.10.sup.21 cm.sup.-3. When
Si:C is epitaxially grown, the Si:C layer may include carbon in the
range of 0.2 to 3.0%. When SiGe is epitaxially grown, the SiGe may
have germanium content in the range of 5% to 80%, or preferably
between 20% and 60%.
[0064] The memory cell 200 further includes dielectric layers 226
isolating pairs of the top and bottom FETs. The dielectric layers
226 can include any suitable material in accordance with the
embodiments described herein (e.g., SiO.sub.2).
[0065] The memory cell 200 further includes a plurality of spacer
layers 228. The plurality of spacer layers 228 can include any
suitable spacer material in accordance with the embodiments
described herein.
[0066] The memory cell 200 further includes shallow trench
isolation (STI) regions 230 and interlayer dielectric (ILD) layers
240. The STI regions 230 and ILD layers 240 can include any
suitable dielectric materials in accordance with the embodiments
described herein.
[0067] The memory cell 200 further includes an insulator layer 234
providing N-P isolation. The insulator layer 234 can include any
suitable material in accordance with the embodiments described
herein. For example, the insulator layer 234 can include, e.g., a
nitride material.
[0068] The memory cell 200 further includes GND contact 210-2, VDD
contact 212-1, WL contact 214-2, BL contact 216-1 2, and
cross-couple connections 218-2.
[0069] The FET corresponding to the fin 206-1 can correspond to a
pass-gate FET, the FETs corresponding to the fins 206-2 and 206-6
can correspond to an inverter, and the FET corresponding to the fin
206-5 can correspond to a non-connected floating FET. Thus, the
merged bottom epi region 222-1 can be used to contact the pass-gate
FET to the inverter FET, the merged top epi region 224-3 can aid
with the cross-couple, and the isolated bottom epi region 222-3 can
correspond to inverter ground.
[0070] FIGS. 5-17 will now describe a portion of a process flow for
fabricating a semiconductor device 300 including a
three-dimensional stacked vertical FET architecture, such as the
device 200 described above with reference to FIGS. 2-4. In one
embodiment, the bottom FETs include nFETS and the top FETS include
pFETS.
[0071] With reference to FIGS. 5-7, FIG. 5 provides a top-down view
of the device 300, FIG. 6 provides a cross-sectional view of the
device 300 shown in FIG. 6 through line C-C', and FIG. 7 provides a
cross-sectional view of the device 300 shown in FIG. 6 through line
D-D'.
[0072] As shown, the device 300 includes a substrate 302. The
substrate 302 can include any suitable substrate structure, e.g., a
bulk semiconductor, a semiconductor-on-insulator (SOI) substrate,
etc. In one example, the substrate 302 can include a
silicon-containing material. Illustrative examples of Si-containing
materials can include, but are not limited to, Si, SiGe, SiGeC, SiC
and multi-layers thereof. Although silicon is the predominantly
used semiconductor material in wafer fabrication, alternative
semiconductor materials can be employed as additional layers, such
as, but not limited to, germanium, gallium arsenide, gallium
nitride, silicon germanium, cadmium telluride, zinc selenide,
etc.
[0073] The device 300 includes a plurality of top tier fin
structures including top tier fins 310, cap layers 312, and liners
314 formed on the sidewalls of the top tier fins 310 and the cap
layers 312. The liners 314 can include any suitable material for
protecting the top fins 310 during downstream processing. The
device 300 further includes a plurality of bottom tier fins 316
separated from the top tier fins 310 by isolation layers 318. The
fins 310 and 316, and the isolation layers 318 can be formed from
the substrate 302 using any suitable process in accordance with the
embodiments described herein. For example, the fins 310 and 316,
and the isolation layers 318, can be formed by etching through an
SOI substrate, where the top tier fins 310 are formed from a
semiconductor layer, the bottom tier fins 316 are formed from a
base substrate layer, and the isolation layers 318 are formed from
an insulation layers disposed between the base substrate layer and
the semiconductor layer. In one embodiment, the bottom tier fins
316 can correspond to nFETs and the top tier fins 310 can
correspond to pFETs. However, such an embodiment should not be
considered limiting.
[0074] As further shown, the bottom tier fins 316 are formed on
bottom tier source/drain epi regions 320, and an STI region 322 is
disposed on the substrate 302 between the bottom tier source/drain
epi regions 320. The bottom tier source/drain epi layers 320 and
the STI region 322 can be formed from the substrate 302 using any
suitable process in accordance with the embodiments described
herein.
[0075] The device 300 further includes bottom tier gate stacks 324
formed about respective ones of the bottom fins 316, a bottom tier
bottom spacer layer 326-1 and ILD layer 308, similar to the spacer
layer 228 and ILD layer 240 described above with reference to FIGS.
2-4. In one embodiment, the bottom tier gate stacks 324 correspond
to nFET gates. The bottom tier gate stacks 324 can be formed using
any suitable process in accordance with the embodiments described
herein. For example, the bottom tier gate stacks 324 can be formed
by depositing gate stack material including gate dielectrics and
gate conductors (e.g., high-k dielectric material and a WFM),
forming the ILD layer 322, and etching the exposed gate stack
material. A bottom tier top spacer layer 326-2 can then be formed
after the formation of the bottom tier gate stacks 324.
[0076] The device 300 further includes bottom tier top source/drain
epi regions 328 formed about respective ones of the bottom fins
316. A drive-in anneal process can be performed to form
junctions.
[0077] The device 300 further includes sacrificial layers 330-1 and
330-2 for source/drain contacts. The sacrificial layers 330-1 and
330-2 can be formed by forming a sacrificial fill, forming
respective mask layers, and etching the exposed portions of the
sacrificial layers 330-1 and 330-2. The sacrificial layers 330-1
and 330-2 can include any suitable material in accordance with the
embodiments described herein. For example, the sacrificial layers
330-1 and 330-2 can include, e.g., an oxide material.
[0078] With reference to FIGS. 8 and 9, an insulator layer 332
providing N-P isolation is formed. The insulator layer 332 can
include any suitable material in accordance with the embodiments
described herein (e.g., a nitride material). As further shown, the
liners 314 are removed, second liners 334 are formed, and top tier
bottom source/drain epi regions 336 are formed about respective
ones of the top fins 310. The top tier bottom source/drain epi
regions 336 can be formed using any suitable process in accordance
with the embodiments described herein. For example, the top tier
bottom source/drain epi regions 336 can be formed by removing the
liners 314 (shown in FIGS. 6 and 7), forming a sacrificial
dielectric layer (not shown) on the insulator layer 332, forming
the second liners 334 on the dielectric layer, removing the
sacrificial dielectric layer, and forming the top tier bottom
source/drain epi regions 336 on the insulator layer 332 underneath
the second liners 334 adjacent to the top fins 310. Then, liner 338
can be formed.
[0079] With reference to FIGS. 10 and 11, portions of the liner 338
are removed, and a top tier bottom spacer 340-1, an ILD layer 342,
top tier gate stacks 344, a top tier top spacer 340-2, top tier top
source/drain regions 346, and an ILD layer 348 are formed.
[0080] With reference to FIGS. 12 and 13, openings 350-1 and 350-2
are formed to the liners 330-1 and 330-2, respectively. Any
suitable etch process can be used to form the openings 350-1 and
350-2 in accordance with the embodiments described herein (e.g.,
reactive-ion etch (RIE)).
[0081] With reference to FIGS. 14 and 15, the liners 330-1, 330-2
and 338 are removed to form voids 352-1 and 352-2. Any suitable
process can be used to remove the liners 330-1, 330-2 and 338 in
accordance with the embodiments described herein.
[0082] With reference to FIGS. 16 and 17, the voids 352-1 and 352-2
are filled with a conductive material to form contacts 354-1 and
354-2, respectively. Examples of suitable conductive materials that
can be used to form the contacts 354-1 and 354-2 include, but are
not limited to, Cu, W, Ru, Co, Al, etc. The contacts 354-1 and
354-2 correspond to cross-couplings. In an alternative embodiment,
the bottom contacts of the
[0083] With reference to FIG. 18, a block/flow diagram is shown
illustrating a system/method 400 for fabricating a semiconductor
device including a stacked vertical transistor memory cell, in
accordance with an embodiment.
[0084] At block 410, a bottom tier of a stacked vertical transistor
memory cell is provided. The bottom tier can include a plurality of
bottom vertical transistors having a merged top source/drain. The
plurality of bottom vertical transistors can include first and
second non-floating transistors and first and second floating
transistors. The floating transistors can have at least one
terminal being electrically disconnected from other transistors of
the stacked vertical transistor memory cell.
[0085] At block 420, a cross-coupling between the bottom tier and a
top tier of the stacked vertical transistor memory cell is formed.
The top tier can include a plurality of top vertical transistors
having a merged bottom source/drain epitaxial region ("epi"). The
plurality of top vertical transistors can include first, second,
third and fourth top vertical transistors.
[0086] The plurality of bottom vertical transistors further
includes respective bottom source/drain epis, and the plurality of
top vertical transistors further includes respective top
source/drain epis. The bottom source/drain epis and the top
source/drain epis can be separated by dielectric layer. The bottom
tier and the top tier can be separated by isolation layers.
[0087] The plurality of bottom vertical transistors can include
n-type field-effect transistors (nFETs) and the plurality of top
vertical transistors include p-type field-effect transistors
(pFETs).
[0088] Forming the cross-coupling between the bottom tier and the
top tier can include forming epi connections by the merged top
source/drain epi between the first non-floating and floating
transistors, and the second non-floating and floating transistors,
forming epi connections by the merged bottom source/drain epi
between the first and third top vertical transistors, and the
second and fourth top vertical transistors, forming gate to epi
connections by metal between the first non-floating and second
floating transistors, and the second non-floating and first
floating transistors, and forming gate to epi connections by metal
between the first and second top vertical transistors, and the
third and fourth top vertical transistors.
[0089] The bottom and top tiers can further include respective gate
structures. Forming the cross-coupling can further include
contacting the gate structures of the bottom and top tiers.
[0090] Further details regarding blocks 410 and 420 are described
above with reference to FIGS. 1-17.
[0091] Having described preferred embodiments of a semiconductor
device and a method of fabricating the same (which are intended to
be illustrative and not limiting), it is noted that modifications
and variations can be made by persons skilled in the art in light
of the above teachings. It is therefore to be understood that
changes may be made in the particular embodiments disclosed which
are within the scope of the invention as outlined by the appended
claims. Having thus described aspects of the invention, with the
details and particularity required by the patent laws, what is
claimed and desired protected by Letters Patent is set forth in the
appended claims.
* * * * *