U.S. patent application number 16/979715 was filed with the patent office on 2021-02-11 for substrate cleaning apparatus and substrate cleaning method.
This patent application is currently assigned to Ebara Corporation. The applicant listed for this patent is Ebara Corporation. Invention is credited to Akira FUKUNAGA, Satomi HAMADA, Masamitsu KURASHITA, Chikako TAKATOH, Megumi UNO.
Application Number | 20210039142 16/979715 |
Document ID | / |
Family ID | 1000005210547 |
Filed Date | 2021-02-11 |
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United States Patent
Application |
20210039142 |
Kind Code |
A1 |
TAKATOH; Chikako ; et
al. |
February 11, 2021 |
SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD
Abstract
There is provided a substrate cleaning apparatus capable of
highly effective self-cleaning of a cleaning tool in a short time
period. The substrate cleaning apparatus includes a cleaning tool
for cleaning a substrate while in contact with a surface of the
substrate, a self-cleaning member for self-cleaning the cleaning
tool while in contact with the cleaning tool, a rotation mechanism
for rotating the cleaning tool, and a holding mechanism for holding
the cleaning tool, the holding mechanism being capable of pressing
the cleaning tool against the substrate and pressing the cleaning
tool against the self-cleaning member. The substrate cleaning
apparatus also includes a controller which controls pressing force
for the cleaning tool against the self-cleaning member such that
self-cleaning torque, with which the rotation mechanism rotates the
cleaning tool at the time of self-cleaning of the cleaning tool, is
prescribed torque equal to or more than substrate cleaning torque,
with which the rotation mechanism rotates the cleaning tool when
the cleaning tool cleans the substrate.
Inventors: |
TAKATOH; Chikako; (Tokyo,
JP) ; FUKUNAGA; Akira; (Tokyo, JP) ;
KURASHITA; Masamitsu; (Tokyo, JP) ; UNO; Megumi;
(Tokyo, JP) ; HAMADA; Satomi; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Ebara Corporation |
Tokyo |
|
JP |
|
|
Assignee: |
Ebara Corporation
Tokyo
JP
|
Family ID: |
1000005210547 |
Appl. No.: |
16/979715 |
Filed: |
February 18, 2019 |
PCT Filed: |
February 18, 2019 |
PCT NO: |
PCT/JP2019/005827 |
371 Date: |
September 10, 2020 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
B08B 1/007 20130101;
H01L 21/02041 20130101; B08B 3/12 20130101; H01L 21/304 20130101;
B08B 1/04 20130101; B08B 3/02 20130101 |
International
Class: |
B08B 1/04 20060101
B08B001/04; B08B 1/00 20060101 B08B001/00; B08B 3/02 20060101
B08B003/02; B08B 3/12 20060101 B08B003/12; H01L 21/304 20060101
H01L021/304; H01L 21/02 20060101 H01L021/02 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 15, 2018 |
JP |
2018-048217 |
Claims
1. A substrate cleaning apparatus comprising: a cleaning tool for
cleaning a substrate while in contact with a surface of the
substrate; a self-cleaning member for self-cleaning the cleaning
tool while in contact with the cleaning tool; a rotation mechanism
for rotating the cleaning tool; a holding mechanism which holds the
cleaning tool, the holding mechanism being capable of pressing the
cleaning tool against the substrate and pressing the cleaning tool
against the self-cleaning member; and a controller which controls
pressing force for the cleaning tool against the self-cleaning
member such that torque, with which the rotation mechanism rotates
the cleaning tool when the cleaning tool is in contact with the
self-cleaning member, is prescribed torque equal to or more than
substrate cleaning torque, with which the rotation mechanism
rotates the cleaning tool when the cleaning tool cleans the
substrate.
2. A substrate cleaning apparatus according to claim 1, wherein the
controller, when the cleaning tool is in contact with the
self-cleaning member, controls the holding mechanism such that the
cleaning tool is pressed against the self-cleaning member with
first pressing force when the cleaning tool is rotating at a first
rotational speed and controls the holding mechanism such that the
cleaning tool is pressed against the self-cleaning member with
second pressing force larger than the first pressing force when the
cleaning tool is rotating at a second rotational speed higher than
the first rotational speed.
3. A substrate cleaning apparatus according to claim 1, wherein the
controller, when the cleaning tool is in contact with the
self-cleaning member in liquid or with supply of the liquid,
controls the holding mechanism such that the cleaning tool is
pressed against the self-cleaning member with first pressing force
when the liquid is at a first temperature and controls the holding
mechanism such that the cleaning tool is pressed against the
self-cleaning member with second pressing force larger than the
first pressing force when the liquid is at a second temperature
higher than the first temperature.
4. A substrate cleaning apparatus comprising: a cleaning tool for
cleaning a substrate while in contact with a surface of the
substrate; a first self-cleaning member for self-cleaning the
cleaning tool while in contact with the cleaning tool, the first
self-cleaning member being formed of a first material; and a second
self-cleaning member for self-cleaning the cleaning tool while in
contact with the cleaning tool, the second self-cleaning member
being formed of a second material, wherein the substrate cleaning
apparatus selects one of the first self-cleaning member and the
second self-cleaning member on the basis of external input, and
self-cleans the cleaning tool by bringing the cleaning tool into
contact with the selected self-cleaning member.
5. A substrate cleaning apparatus according to claim 4, wherein the
controller self-cleans the cleaning tool by bringing the cleaning
tool into contact with the first self-cleaning member and then
bringing the cleaning tool into contact with the second
self-cleaning member.
6. The substrate cleaning apparatus according to claim 4, wherein
the first material is a material in which surface free energy has a
larger hydrogen-bonding component and a smaller dispersion force
component than the second material at the time of self-cleaning the
cleaning tool.
7. The substrate cleaning apparatus according to claim 4, wherein
the first material is an inorganic oxide-based material or a first
organic polymer-based material which has a polar group in a
molecular structure, and the second material is a second organic
polymer-based material which is non-polar.
8. The substrate cleaning apparatus according to claim 1, wherein
the self-cleaning of the cleaning tool comprises short-time
self-cleaning of first duration and long-time self-cleaning of
second duration longer than the first duration, and ultrapure water
is used in the short-time self-cleaning, and an ultrapure water
rinse is used after chemical solution processing or only ultrapure
water processing is performed in the long-time self-cleaning.
9. The substrate cleaning apparatus according to claim 1, further
comprising: a bath in which liquid is stored and which houses the
self-cleaning member; and a vibration module which gives ultrasound
vibration to the liquid.
10. The substrate cleaning apparatus according to claim 1, further
comprising a jetting module which jets gas or liquid toward the
cleaning tool when the cleaning tool is self-cleaned.
11. A substrate cleaning method comprising: a cleaning step of
cleaning a substrate by rotating a cleaning tool and bringing the
cleaning tool into contact with a surface of the substrate; and a
self-cleaning step of self-cleaning the cleaning tool by rotating
the cleaning tool and bringing the cleaning tool into contact with
a self-cleaning member, wherein the self-cleaning step comprises
controlling pressing force for the cleaning tool against the
self-cleaning member such that torque which rotates the cleaning
tool is prescribed torque equal to or more than substrate cleaning
torque which rotates the cleaning tool in the cleaning step.
12. A substrate cleaning method according to claim 11, wherein the
self-cleaning step comprises pressing the cleaning tool against the
self-cleaning member with first pressing force when the cleaning
tool is rotating at a first rotational speed and pressing the
cleaning tool against the self-cleaning member with second pressing
force larger than the first pressing force when the cleaning tool
is rotating at a second rotational speed higher than the first
rotational speed.
13. A substrate cleaning method according to claim 11, wherein the
self-cleaning step comprises pressing the cleaning tool against the
self-cleaning member with first pressing force when the liquid is
at a first temperature and pressing the cleaning tool against the
self-cleaning member with second pressing force larger than the
first pressing force when the liquid is at a second temperature
higher than the first temperature.
14. A substrate cleaning method comprising: a cleaning step of
cleaning a substrate by rotating a cleaning tool and bringing the
cleaning tool into contact with a surface of the substrate; a
selection step of selecting one of a first self-cleaning member
which is formed of a first material and a second self-cleaning
member which is formed of a second material, on the basis of
external input; and a self-cleaning step of self-cleaning the
cleaning tool by rotating the cleaning tool and bringing the
cleaning tool into contact with the self-cleaning member selected
in the selection step.
15. A substrate cleaning method according to claim 14, wherein the
self-cleaning step comprises a first self-cleaning step of
self-cleaning the cleaning tool by rotating the cleaning tool and
bringing the cleaning tool into contact with a first self-cleaning
member which is formed of a first material; and a second
self-cleaning step of, after the first self-cleaning step,
self-cleaning the cleaning tool by rotating the cleaning tool and
bringing the cleaning tool into contact with a second self-cleaning
member which is formed of a second material.
Description
TECHNICAL FIELD
[0001] The present invention relates to a substrate cleaning
apparatus and a substrate cleaning method.
BACKGROUND ART
[0002] In a manufacturing process of semiconductor devices, various
types of films different in physical properties are formed on a
silicon substrate, and the films are subjected to various types of
processing, thereby forming fine metal wiring. For example, in a
damascene wiring formation process, a wiring groove is formed in a
film, and a metal, such as Cu, is embedded in the wiring groove.
After that, excess metal is removed by chemical mechanical
polishing (CMP), thereby forming metal wiring. Generally, a CMP
apparatus (polishing apparatus) which polishes a substrate is
equipped with a substrate cleaning apparatus which cleans a
polished substrate. A substrate is cleaned by bringing a cleaning
tool, such as a roll sponge or a pen sponge, into contact with the
substrate while rotating the substrate.
[0003] As cleaning of a substrate with a cleaning tool proceeds,
abrasive grains used in CMP and polishing debris (hereinafter also
collectively referred to as "processing debris") are accumulated on
a surface of and in the cleaning tool. In order to remove such
processing debris from the cleaning tool, periodic self-cleaning of
the cleaning tool is performed. The self-cleaning of the cleaning
tool is performed by bringing the cleaning tool into contact with a
self-cleaning member, such as a brush or a plate, while rotating
the cleaning tool. Before cleaning a polished substrate with a new
replacement brush, processing called a break-in similar to the
self-cleaning is also performed for the purpose of initializing the
brush. The processes will be collectively referred to as
self-cleaning hereinafter.
[0004] The above-described self-cleaning of a cleaning tool is, for
example, performed between substrates (each time one substrate is
cleaned) in a relatively short time period and performed between
lots (each time a prescribed number of substrates are cleaned) and
at the time of break-in processing in a relatively long time
period. Ultrapure water is often used as a cleaning liquid for
substrate-to-substrate self-cleaning, and a chemical solution may
be used as a cleaning liquid for lot-to-lot self-cleaning and at
the time of break-in processing.
CITATION LIST
Patent Literature
[0005] PTL 1: Japanese Patent Laid-Open No. 2005-12238
SUMMARY OF INVENTION
Technical Problem
[0006] Since self-cleaning of a cleaning tool is executed during a
substrate processing process or between substrate processing
processes, when a time period taken for self-cleaning is longer,
the overall time efficiency of substrate processing decreases. In
contrast, when the self-cleaning effect for the cleaning tool is
reduced by shortening a time period taken for self-cleaning,
processing debris left at the cleaning tool contaminates a
substrate.
[0007] It is conceivable to adjust a rotational speed of a cleaning
tool, a temperature of a cleaning liquid, and the like in order to
enhance the self-cleaning effect. That is, increase in the
rotational speed of the cleaning tool is assumed to increase the
frequency of contact at a portion of contact between the cleaning
tool and a self-cleaning member and enhance the self-cleaning
effect for the cleaning tool. Additionally, increase in the
temperature of the cleaning liquid is assumed to make polishing
debris more likely to be discharged into the cleaning liquid and
enhance the self-cleaning effect for the cleaning tool.
[0008] The self-cleaning effect is affected by friction between the
cleaning tool and the self-cleaning member. When the friction
between the cleaning tool and the self-cleaning member is
insufficient, processing debris is not discharged from the cleaning
tool, and a full self-cleaning effect is not achieved. In contrast,
excessive friction between the cleaning tool and the self-cleaning
member can cause abrasion and deterioration of the cleaning tool.
As a result of studies by the present inventor, it has found that a
press and a rotational speed of a cleaning tool and a temperature
of a cleaning liquid affect friction between the cleaning tool and
a self-cleaning member in various manners.
[0009] An object of the present invention, which has been made in
view of at least a part of the above-described problems, is to
provide a substrate cleaning apparatus or a substrate cleaning
method capable of highly effective self-cleaning of a cleaning tool
in a short time period. Another object of the present invention is
to provide a substrate cleaning apparatus or a substrate cleaning
method capable of self-cleaning of cleaning tool by pressing the
cleaning tool against a self-cleaning member with suitable pressing
force.
Solution to Problem
[0010] (Mode 1) According to mode 1, there is proposed a substrate
cleaning apparatus. The substrate cleaning apparatus includes a
cleaning tool for cleaning a substrate while in contact with a
surface of the substrate, a self-cleaning member for self-cleaning
the cleaning tool while in contact with the cleaning tool, a
rotation mechanism for rotating the cleaning tool, a holding
mechanism which holds the cleaning tool, the holding mechanism
being capable of pressing the cleaning tool against the substrate
and pressing the cleaning tool against the self-cleaning member,
and a controller which controls pressing force for the cleaning
tool against the self-cleaning member such that torque, with which
the rotation mechanism rotates the cleaning tool when the cleaning
tool is in contact with the self-cleaning member, is prescribed
torque equal to or more than substrate cleaning torque, with which
the rotation mechanism rotates the cleaning tool when the cleaning
tool cleans the substrate. According to mode 1, it is possible to
press the cleaning tool against the self-cleaning member with
suitable pressing force and self-clean the cleaning tool.
[0011] (Mode 2) According to mode 2, there is proposed a substrate
cleaning apparatus. The substrate cleaning apparatus includes a
cleaning tool for cleaning a substrate while in contact with a
surface of the substrate, a self-cleaning member for self-cleaning
the cleaning tool while in contact with the cleaning tool, a
rotation mechanism for rotating the cleaning tool, a holding
mechanism which holds the cleaning tool, the holding mechanism
being capable of pressing the cleaning tool against the substrate
and pressing the cleaning tool against the self-cleaning member,
and a controller which, when the cleaning tool is in contact with
the self-cleaning member, controls the holding mechanism such that
the cleaning tool is pressed against the self-cleaning member with
first pressing force when the cleaning tool is rotating at a first
rotational speed and controls the holding mechanism such that the
cleaning tool is pressed against the self-cleaning member with
second pressing force larger than the first pressing force when the
cleaning tool is rotating at a second rotational speed higher than
the first rotational speed. Mode 2 is based on the discovery that
friction between the cleaning tool and the self-cleaning member
tends to decrease with increase in a rotational speed of the
cleaning tool. According to mode 2, it is possible to press the
cleaning tool against the self-cleaning member with suitable
pressing force and self-clean the cleaning tool.
[0012] (Mode 3) According to mode 3, there is proposed a substrate
cleaning apparatus. The substrate cleaning apparatus includes a
cleaning tool for cleaning a substrate while in contact with a
surface of the substrate, a self-cleaning member for self-cleaning
the cleaning tool while in contact with the cleaning tool, a
rotation mechanism for rotating the cleaning tool, a holding
mechanism which holds the cleaning tool, the holding mechanism
being capable of pressing the cleaning tool against the substrate
and pressing the cleaning tool against the self-cleaning member,
and a controller which, when the cleaning tool is in contact with
the self-cleaning member in liquid or with supply of the liquid,
controls the holding mechanism such that the cleaning tool is
pressed against the self-cleaning member with first pressing force
when the liquid is at a first temperature and controls the holding
mechanism such that the cleaning tool is pressed against the
self-cleaning member with second pressing force larger than the
first pressing force when the liquid is at a second temperature
higher than the first temperature. Mode 3 is based on the discovery
that friction between the cleaning tool and the self-cleaning
member decreases with increase in a temperature of the liquid used
for self-cleaning. According to mode 3, it is possible to press the
cleaning tool against the self-cleaning member with suitable
pressing force and self-clean the cleaning tool.
[0013] (Mode 4) According to mode 4, there is proposed a substrate
cleaning apparatus. The substrate cleaning apparatus includes a
cleaning tool for cleaning a substrate while in contact with a
surface of the substrate, a first self-cleaning member for
self-cleaning the cleaning tool while in contact with the cleaning
tool, the first self-cleaning member being formed of a first
material, and a second self-cleaning member for self-cleaning the
cleaning tool while in contact with the cleaning tool, the second
self-cleaning member being formed of a second material, and selects
one of the first self-cleaning member and the second self-cleaning
member on the basis of external input and self-cleans the cleaning
tool by bringing the cleaning tool into contact with the selected
self-cleaning member. According to mode 4, it is possible to select
the self-cleaning member on the basis of the external input and
self-clean the cleaning tool. This allows highly effective
self-cleaning of the cleaning tool in a short time period.
[0014] (Mode 5) According to mode 5, there is proposed a substrate
cleaning apparatus. The substrate cleaning apparatus includes a
cleaning tool for cleaning a substrate while in contact with a
surface of the substrate, a first self-cleaning member for
self-cleaning the cleaning tool while in contact with the cleaning
tool, the first self-cleaning member being formed of a first
material, and a second self-cleaning member for self-cleaning the
cleaning tool while in contact with the cleaning tool, the second
self-cleaning member being formed of a second material, and
self-cleans the cleaning tool by bringing the cleaning tool into
contact with the first self-cleaning member and then bringing the
cleaning tool into contact with the second self-cleaning member.
According to mode 5, self-cleaning of the cleaning tool is
performed using the two self-cleaning members. This allows
enhancement of a self-cleaning effect for the cleaning tool.
[0015] (Mode 6) According to mode 6, in the substrate cleaning
apparatus of mode 4 or 5, the first material is a material in which
surface free energy has a larger hydrogen-bonding component and a
smaller dispersion force component than the second material at the
time of self-cleaning the cleaning tool. According to mode 6, it is
possible to first remove processing debris, such as abrasive
grains, in which surface free energy has a larger hydrogen-bonding
component from the cleaning tool, using the first self-cleaning
member and then remove processing debris, such as organic
complexes, in which surface free energy has a larger dispersion
force component from the cleaning tool, using the second
self-cleaning member.
[0016] (Mode 7) According to mode 7, in the substrate cleaning
apparatus of anyone of modes 4 to 6, the first material is an
inorganic oxide-based material or a first organic polymer-based
material which has a polar group in a molecular structure, and the
second material is a second organic polymer-based material which is
non-polar.
[0017] (Mode 8) According to mode 8, in the substrate cleaning
apparatus of anyone of modes 1 to 7, the self-cleaning of the
cleaning tool includes short-time self-cleaning of first duration
and long-time self-cleaning of second duration longer than the
first duration, and ultrapure water is used in the short-time
self-cleaning, and a chemical solution may be used in the long-time
self-cleaning, and ultrapure water-based rinse processing is
subsequently performed when a chemical solution is used. In either
case, a cleaning effect may be enhanced by increasing a liquid
temperature. Note that, when rinsing using ultrapure water is
performed after use of a chemical solution, cleaning torque may
change before or after the rinsing. In the case, pressing or the
number of revolutions is adjusted such that the cleaning torque is
equal to or more than torque at the time of wafer cleaning.
[0018] (Mode 9) According to mode 9, the substrate cleaning
apparatus of anyone of modes 1 to 8 further includes a bath in
which liquid is stored and which houses the self-cleaning member,
and a vibration module which gives ultrasound vibration to the
liquid.
[0019] (Mode 10) According to mode 10, the substrate cleaning
apparatus of anyone of modes 1 to 9 further includes a jetting
module which jets gas or liquid toward the cleaning tool when the
cleaning tool is self-cleaned.
[0020] (Mode 11) According to mode 11, there is proposed a
substrate cleaning method. The substrate cleaning method includes a
cleaning step of cleaning a substrate by rotating a cleaning tool
and bringing the cleaning tool into contact with a surface of the
substrate, and a self-cleaning step of self-cleaning the cleaning
tool by rotating the cleaning tool and bringing the cleaning tool
into contact with a self-cleaning member, and the self-cleaning
step includes controlling pressing force for the cleaning tool
against the self-cleaning member such that torque which rotates the
cleaning tool is prescribed torque equal to or more than substrate
cleaning torque which rotates the cleaning tool in the cleaning
step. According to mode 11, it is possible to press the cleaning
tool against the self-cleaning member with suitable pressing force
and self-clean the cleaning tool.
[0021] (Mode 12) According to mode 12, there is proposed a
substrate cleaning method. The substrate cleaning method includes a
cleaning step of cleaning a substrate by rotating a cleaning tool
and bringing the cleaning tool into contact with a surface of the
substrate, and a self-cleaning step of self-cleaning the cleaning
tool by rotating the cleaning tool and bringing the cleaning tool
into contact with a self-cleaning member, and the self-cleaning
step includes pressing the cleaning tool against the self-cleaning
member with first pressing force when the cleaning tool is rotating
at a first rotational speed and pressing the cleaning tool against
the self-cleaning member with second pressing force larger than the
first pressing force when the cleaning tool is rotating at a second
rotational speed higher than the first rotational speed. According
to mode 12, it is possible to press the cleaning tool against the
self-cleaning member with suitable pressing force and self-clean
the cleaning tool.
[0022] (Mode 13) According to mode 13, there is proposed a
substrate cleaning method. The substrate cleaning method includes a
cleaning step of cleaning a substrate by rotating a cleaning tool
and bringing the cleaning tool into contact with a surface of the
substrate, and a self-cleaning step of self-cleaning the cleaning
tool by rotating the cleaning tool and bringing the cleaning tool
into contact with an in-bath self-cleaning member in liquid or with
supply of the liquid, and the self-cleaning step includes pressing
the cleaning tool against the self-cleaning member with first
pressing force when the liquid is at a first temperature and
pressing the cleaning tool against the self-cleaning member with
second pressing force larger than the first pressing force when the
liquid is at a second temperature higher than the first
temperature. According to mode 13, it is possible to press the
cleaning tool against the self-cleaning member with suitable
pressing force and self-clean the cleaning tool.
[0023] (Mode 14) According to mode 14, there is proposed a
substrate cleaning method. The substrate cleaning method includes a
cleaning step of cleaning a substrate by rotating a cleaning tool
and bringing the cleaning tool into contact with a surface of the
substrate, a selection step of selecting one of a first
self-cleaning member which is formed of a first material and a
second self-cleaning member which is formed of a second material,
on the basis of external input, and a self-cleaning step of
self-cleaning the cleaning tool by rotating the cleaning tool and
bringing the cleaning tool into contact with the self-cleaning
member selected in the selection step. According to mode 14, it is
possible to select the self-cleaning member on the basis of the
external input and self-clean the cleaning tool. This allows highly
effective self-cleaning of the cleaning tool in a short time
period.
[0024] (Mode 15) According to mode 15, there is proposed a
substrate cleaning method. The substrate cleaning method includes a
cleaning step of cleaning a substrate by rotating a cleaning tool
and bringing the cleaning tool into contact with a surface of the
substrate, a first self-cleaning step of self-cleaning the cleaning
tool by rotating the cleaning tool and bringing the cleaning tool
into contact with a first self-cleaning member which is formed of a
first material, and a second self-cleaning step of, after the first
self-cleaning step, self-cleaning the cleaning tool by rotating the
cleaning tool and bringing the cleaning tool into contact with a
second self-cleaning member which is formed of a second material.
According to mode 15, self-cleaning of the cleaning tool is
performed using the two self-cleaning members. This allows
enhancement of a self-cleaning effect for the cleaning tool.
BRIEF DESCRIPTION OF DRAWINGS
[0025] FIG. 1 is a plan view showing a schematic configuration of a
substrate processing apparatus including a substrate cleaning
apparatus according to an embodiment;
[0026] FIG. 2 is a perspective view showing a schematic
configuration of the substrate cleaning apparatus according to the
embodiment;
[0027] FIG. 3 is a perspective view showing a schematic
configuration of a substrate cleaning apparatus according to
another example;
[0028] FIG. 4 is a view schematically showing self-cleaning of a
pen member;
[0029] FIG. 5 is a view schematically showing self-cleaning of a
roll member;
[0030] FIG. 6 is a flowchart showing an example of a self-cleaning
target pressing force setting process to be executed by a
controller according to a first embodiment;
[0031] FIG. 7 is a flowchart showing an example of a self-cleaning
target pressing force setting process to be executed by a
controller according to a second embodiment;
[0032] FIG. 8 is a graph showing an example of a relationship
between a number Ns of revolutions and a temperature Tc, and target
pressing force Pp*;
[0033] FIG. 9 is a view showing an example of a combination of a
bath and a self-cleaning member according to a third
embodiment;
[0034] FIG. 10 is a flowchart showing an example of a self-cleaning
member selection process to be executed by a controller according
to the third embodiment; and
[0035] FIG. 11 is a flowchart showing an example of a self-cleaning
process to be executed by a controller according to a fourth
embodiment.
DESCRIPTION OF EMBODIMENTS
[0036] Embodiments of the present invention will be described below
with reference to the drawings. In the drawings to be described
below, the same or corresponding components are denoted by the same
reference numerals, and a redundant description thereof will be
omitted. Substrate cleaning apparatuses according to the
embodiments of the present invention can each be used as a part of
a substrate processing apparatus which processes a substrate, such
as a semiconductor wafer.
First Embodiment
[0037] FIG. 1 is a view showing a schematic configuration of a
substrate processing apparatus including a substrate cleaning
apparatus according to an embodiment. As shown in FIG. 1, a
substrate processing apparatus 10 has a housing 110 and a load port
112 which is arranged adjacent to the housing 110. An open cassette
for stocking many substrates Wf (see, e.g., FIG. 2), a SMIF
(Standard Manufacturing Interface) pod, or a FOUP (Front Opening
Unified Pod) can be loaded onto the load port 112. A SMIF pod and a
FOUP are each an airtight container which houses a substrate
cassette inside and can maintain an environment independent of an
external space.
[0038] A plurality of (four in the aspect shown in FIG. 1)
polishing modules 114a to 114d, a first cleaning module 116 and a
second cleaning module 118 which clean the substrate Wf after
polishing, and a drying module 120 which dries the substrate Wf
after cleaning are housed in the housing 110. In the example shown
in FIG. 1, the polishing modules 114a to 114d are arrayed in a
longitudinal direction of the substrate processing apparatus 10,
and the cleaning modules 116 and 118 and the drying module 120 are
arranged in parallel with the polishing modules 114a to 114d.
[0039] A first transfer robot 122 is arranged between the load port
112, and the polishing module 114a and the drying module 120
located closer to the load port 112. A transfer module 124 is
arranged between the polishing modules 114a to 114d, and the
cleaning modules 116 and 118 and the drying module 120. The first
transfer robot 122 receives the substrate Wf before polishing from
the load port 112 and passes the substrate Wf to the transfer
module 124 or receives, from the transfer module 124, the substrate
Wf after drying taken out from the drying module 120.
[0040] The polishing modules 114a to 114d are each a region where
polishing (planarization) of the substrate Wf is performed. Since
the polishing modules 114a to 114d are not central to the present
invention, a detailed description thereof will be omitted.
[0041] A second transfer robot 126 which performs passing of the
substrate Wf between the first cleaning module 116 and the second
cleaning module 118 is arranged between the first cleaning module
116 and the second cleaning module 118. A third transfer module 128
which performs passing of the substrate Wf between the second
cleaning module 118 and the drying module 120 is arranged between
the second cleaning module 118 and the drying module 120.
Additionally, a controller 50 which controls the movement of the
modules of the substrate processing apparatus 10 is arranged inside
the housing 110. In the present embodiment, the controller 50 is
arranged inside the housing 110. Note that the present invention is
not limited to this example and that the controller 50 may be
arranged outside the housing 110. In the present embodiment, the
controller 50 has an input module 52 which accepts external input.
The external input here can include a user's mechanical operation
and wired or wireless signal input from an external device.
[0042] The cleaning modules 116 and 118 according to the present
embodiment each clean the substrate Wf by bringing a cleaning tool
(to be described later) into contact with the surface of the
substrate Wf while causing the cleaning tool to rotate. As each of
the cleaning modules 116 and 118, a two-fluid jet cleaning device
which cleans the surface of the substrate Wf with a two-fluid jet
may be used in combination with the cleaning tool.
[0043] By way of example, the drying module 120 dries the substrate
Wf by jetting IPA steam from a nozzle (not shown) toward the
rotating substrate Wf. Alternatively, the drying module 120 may
rotate the substrate Wf at high speed and dry the substrate Wf by
centrifugal force.
[0044] FIG. 2 is a perspective view showing a schematic
configuration of a substrate cleaning apparatus according to the
embodiment, and FIG. 3 is a perspective view showing a schematic
configuration of a substrate cleaning apparatus according to
another example. As shown in FIGS. 2 and 3, a substrate cleaning
apparatus 20 (the cleaning module 116 or 118) has a substrate
rotation mechanism (see support members 40 (to be described later)
in the present embodiment) which hold and rotate the substrate Wf
and supply modules 42 which supply a cleaning liquid to the
substrate Wf. Cleaning liquids according to the present embodiment
include a rinse solution, such as ultrapure water (DIW), and a
chemical solution, such as an aqueous solution of ammonia and
hydrogen peroxide (SC-1), an aqueous solution of hydrochloric acid
and hydrogen peroxide (SC-2), an aqueous solution of sulfuric acid
and hydrogen peroxide (SPM), or hydrofluoric acid. Unless otherwise
noted in the present embodiment, a cleaning liquid refers to either
a rinse solution or a chemical solution.
[0045] The substrate Wf rotates on its central axis (an axis
passing through a center O and perpendicular to the surface of the
substrate Wf) as a rotation axis. Although the present embodiment
will be described mainly using an aspect in which the surface of
the substrate Wf extends along a horizontal direction and the
rotation axis extends in a vertical direction, the present
invention is not limited to this. The substrate rotation mechanism
according to the present embodiment has four support members 40
which support an outer perimeter of the substrate Wf. The support
member 40 is, for example, a spindle, a chuck, or the like.
Rotation of the spindle, chuck, or the like allows rotation of the
substrate Wf.
[0046] The substrate cleaning apparatus 20 includes a cleaning tool
11 which cleans the substrate Wf while in contact with the
substrate Wf, a rotation mechanism 31 which rotates the cleaning
tool 11, and a holding mechanism 32 which holds the cleaning tool
11. A pen member 11A (see FIG. 2) which rotates about a rotation
axis generally perpendicular to the surface of the substrate Wf can
be used as the cleaning tool 11. Alternatively, a roll member 11B
(see FIGS. 2 and 3) which extends linearly over almost the entire
length of a diameter of the substrate Wf can be used as the
cleaning tool 11.
[0047] The rotation mechanism 31 rotates the cleaning tool 11 about
a rotation axis generally perpendicular to the surface of the
substrate Wf when the pen member 11A is used as the cleaning tool
11. The rotation mechanism 31 rotates the cleaning tool 11 about a
rotation axis parallel to the surface of the substrate Wf when the
roll member 11B is used as the cleaning tool 11. Various types of
mechanisms can be adopted as the rotation mechanism 31. By way of
example, a DC motor and a link mechanism can be adopted.
[0048] The holding mechanism 32 can move the cleaning tool 11 and
the rotation mechanism 31 perpendicularly to the surface of the
substrate Wf and press the cleaning tool 11 against the substrate
Wf or move the cleaning tool 11 away from the substrate Wf. Various
types of mechanisms can be adopted as the holding mechanism 32. By
way of example, a motor drive mechanism using a ball screw, an air
cylinder, or the like can be adopted. Alternatively, the holding
mechanism 32 can move the cleaning tool 11 and the rotation
mechanism 31 parallel to the surface of the substrate Wf and change
a portion of contact between the cleaning tool 11 and the substrate
Wf or move the cleaning tool 11 to a standby position (not
shown).
[0049] Note that, in the example shown in FIG. 2, the pen member
11A cleans an upper surface (an upper surface in FIG. 2) of the
substrate Wf and that the roll member 11B cleans a lower surface (a
lower surface in FIG. 2) of the substrate Wf. In the example shown
in FIG. 3, the roll member 11B cleans the obverse and the reverse
of the substrate Wf. Note that the substrate Wf only needs to be
cleaned by the cleaning tool 11 in contact with the surface of the
substrate Wf and that the substrate cleaning apparatus 20 is not
limited to the example in FIG. 2 or 3.
[0050] In a case where a new cleaning tool 11 is used (e.g., the
cleaning tool 11 is replaced with another), a break-in of the
cleaning tool 11 is performed. Since the cleaning tool 11 may be
dry in its initial state, the cleaning tool 11 may damage the
substrate Wf when the cleaning tool 11 in this state is used for
cleaning processing. Even when the cleaning tool 11 is provided in
a wet state, particles which are a source of contamination may be
adherent to a sponge itself. For this reason, the cleaning tool 11
is saturated with water and is kneaded or an initial warm-up
(break-in) is performed to remove the particles. Cleaning
processing is executed using the cleaning tool 11 having undergone
the break-in, and the substrate Wf is checked for back
contamination after cleaning. Back contamination means that the
clean substrate Wf is contaminated by the cleaning tool 11. Since
occurrence of back contamination has a significant adverse effect
on subsequent processes, a checkup for back contamination is
important.
[0051] As cleaning of the substrate Wf with the cleaning tool 11
proceeds, processing debris at the time of polishing of the
substrate Wf is accumulated on the surface of and in the cleaning
tool 11. For this reason, self-cleaning of the cleaning tool 11 is
periodically performed. The self-cleaning is performed by bringing
the cleaning tool 11 into contact with a self-cleaning member 60.
The self-cleaning of the cleaning tool 11 is performed between
substrates (each time one substrate is cleaned) in a relatively
short time period (a first time period) and performed between lots
(each time a prescribed number of substrates are cleaned) in a
relatively long time period (a second time period). In the present
embodiment, in substrate-to-substrate self-cleaning, pure water
(DIW) or the like is used as a liquid to be used for self-cleaning.
In contrast, in lot-to-lot self-cleaning, ultrapure water is used
after a chemical solution, such as an aqueous solution of ammonia
and hydrogen peroxide (SC-1), an aqueous solution of hydrochloric
acid and hydrogen peroxide (SC-2), an aqueous solution of sulfuric
acid and hydrogen peroxide (SPM), or hydrofluoric acid, is used.
Note that the present invention is not limited to this example, a
chemical solution may be used in substrate-to-substrate
self-cleaning, and that a chemical solution may not be used in
lot-to-lot self-cleaning. Note that self-cleaning is assumed to
include a break-in in the following description.
[0052] FIG. 4 is a view schematically showing self-cleaning of the
pen member 11A, and FIG. 5 is a view schematically showing
self-cleaning of the roll member 11B. As shown in FIGS. 4 and 5,
the self-cleaning member 60 is arranged in a bath 62. The
self-cleaning member 60 is formed of for example, an inorganic
oxide-based material, such as a quartz plate or a sapphire plate,
or a good organic polymer-based material with chemical resistance
and low elution, such as PTFE, PVDF, PFA, PPS, PEEK, or PMMA. A
liquid 64, such as ultrapure water (DIW) or a chemical solution
(e.g., an aqueous solution of ammonia and hydrogen peroxide (SC-1),
an aqueous solution of hydrochloric acid and hydrogen peroxide
(SC-2), an aqueous solution of sulfuric acid and hydrogen peroxide
(SPM), or hydrofluoric acid), is stored in the bath 62. In the bath
62, it is preferable that a transport mechanism 65 supply a clean
liquid or circulate an internal liquid while cleaning the internal
liquid. The liquid 64 stored in the bath 62 is preferably adjusted
in temperature by an adjustment mechanism 66. For example, a heater
can be used as the adjustment mechanism 66. Additionally, the
substrate cleaning apparatus 20 may include a vibration module 67
which gives ultrasound vibration into the bath 62 at the time of
self-cleaning of the cleaning tool 11. Alternatively, the substrate
cleaning apparatus 20 may include a jetting module 68 which jets
gas or liquid toward the cleaning tool 11 at the time of
self-cleaning of the cleaning tool 11.
[0053] Note that the self-cleaning member 60 is arranged in the
bath 62 in the examples shown in FIGS. 4 and 5. The present
invention, however, is not limited to these examples, and the bath
62 may not be provided. Note that, even when the bath 62 is not
provided, self-cleaning of the cleaning tool 11 may be performed
with supply of the liquid 64 by the transport mechanism 65, i.e.,
while the liquid 64 is, for example, continuously run over the
cleaning tool 11. Even in this case, a temperature of the liquid 64
may be adjusted by the adjustment mechanism 66.
[0054] As shown in FIG. 4, when the pen member 11A is self-cleaned,
the rotation mechanism 31 rotates the pen member 11A, and the
holding mechanism 32 presses the pen member 11A against the
self-cleaning member 60. Note that although FIG. 4 shows an example
where a surface of the self-cleaning member 60 is perpendicular to
the rotation axis of the pen member 11A, the present invention is
not limited to this example. As shown in FIG. 5, when the roll
member 11B is self-cleaned, the rotation mechanism 31 rotates the
roll member 11B, and the holding mechanism 32 presses the roll
member 11B against the self-cleaning member 60. Note that although,
in the example shown in FIG. 5, the surface of the self-cleaning
member 60 is inclined to the vertical direction, and the roll
member 11B moves in the vertical direction to come into contact
with the self-cleaning member 60, the present invention is not
limited to this example.
[0055] FIG. 6 is a flowchart showing an example of a self-cleaning
target pressing force setting process to be executed by the
controller 50 according to the embodiment. This process is executed
at prescribed time intervals (e.g., every several tens of msec)
when the cleaning tool 11 is brought into contact with the
self-cleaning member 60, i.e., when the cleaning tool 11 is
self-cleaned.
[0056] When the above-described process is started, the controller
50 first reads output torque Tr from the rotation mechanism 31
(S12). The output torque Tr is torque, with which the rotation
mechanism 31 rotates the cleaning tool 11, when the cleaning tool
11 and the self-cleaning member 60 are in contact and can be
detected on the basis of, for example, a value of current which
flows to a motor (not shown) of the rotation mechanism 31. As for
the output torque Tr, a torque command from the controller 50 to
the rotation mechanism 31 may be used.
[0057] The controller 50 then sets target pressing force Pp*, with
which the cleaning tool 11 is to be pressed against the
self-cleaning member 60, on the basis of the output torque Tr and
prescribed target torque Tr* (S14) and ends the present process.
The target torque Tr* here is prescribed torque determined in
advance and is torque equal to or more than torque (substrate
cleaning torque) which acts on the cleaning tool 11 when the
cleaning tool 11 cleans the substrate Wf. The target torque Tr* may
be set by external input. By way of example, the setting of the
target pressing force Pp* can be performed on the basis of a
difference between the output torque Tr and the target torque Tr*
by a PI operation using a proportional gain Gp and an integral gain
Gi or a PID operation using the proportional gain Gp, the integral
gain Gi, and a derivative gain Gd. When the controller 50 ends the
present process, the controller 50 controls the holding mechanism
32 such that the cleaning tool 11 is pressed against the
self-cleaning member 60 with the target pressing force Pp*.
[0058] Friction between the cleaning tool 11 and the self-cleaning
member 60 varies with not only pressing force Pp for the cleaning
tool 11 against the self-cleaning member 60 but also conditions,
such as abrasion of the cleaning tool 11, a rotational speed (a
number Ns of revolutions) of the cleaning tool 11, a type and a
temperature Tc of the liquid 64, and a material for and a shape of
the self-cleaning member 60. When the friction between the cleaning
tool 11 and the self-cleaning member 60 is insufficient, a full
self-cleaning effect may not be achieved in self-cleaning of the
cleaning tool 11. In this case, the insufficient self-cleaning of
the cleaning tool 11 may cause back contamination of the substrate
Wf to adversely affect subsequent processes or increase a time
period and a cost required for a break-in checkup. On the other
hand, when the friction between the cleaning tool 11 and the
self-cleaning member 60 is excessively large, abrasion may cause
deterioration of the cleaning tool 11. In contrast, in the
substrate cleaning apparatus 20 according to the present
embodiment, pressing force for the cleaning tool 11 against the
self-cleaning member 60 is controlled such that the output torque
Tr from the rotation mechanism 31 when the cleaning tool 11 and the
self-cleaning member 60 are in contact is the prescribed torque
equal to or more than the substrate cleaning torque. Adoption of
torque which prevents deterioration of the cleaning tool 11 as the
prescribed torque makes it possible to press the cleaning tool 11
against the self-cleaning member 60 with suitable pressing force
and self-clean the cleaning tool 11.
[0059] In the substrate cleaning apparatus 20 according to the
present embodiment, the target torque Tr* is set at torque equal to
or more than the substrate cleaning torque. That is, the target
torque Tr* is torque equal to or more than torque which acts on the
cleaning tool 11 when processing debris is accumulated at the
cleaning tool 11. Use of the target torque Tr* makes it possible to
suitably remove processing debris from the cleaning tool 11 in a
short time period.
Second Embodiment
[0060] A substrate processing apparatus 10 according to a second
embodiment has the same configuration as the substrate processing
apparatus 10 according to the first embodiment, and a redundant
description thereof will be omitted. The substrate processing
apparatus 10 according to the second embodiment is different from
the substrate processing apparatus 10 according to the first
embodiment in that a self-cleaning target pressing force setting
process shown in FIG. 7 is executed instead of the process shown in
FIG. 6. The process shown in FIG. 7 is executed at prescribed time
intervals (e.g., every several tens of msec) by a controller 50
when a cleaning tool 11 is brought into contact with a
self-cleaning member 60, i.e., when the cleaning tool 11 is
self-cleaned.
[0061] When the above-described process is started, a controller 50
reads a number Ns of revolutions of the cleaning tool 11 and a
temperature Tc of a liquid 64 (S22). As the number Ns of
revolutions of the cleaning tool 11, a detected value from a sensor
(not shown) which detects the number Ns of revolutions of the
cleaning tool 11 or a detected value from a sensor (not shown)
which detects the number of revolutions of a rotation mechanism 31
can be used. As for the number Ns of revolutions of the cleaning
tool 11, a number-of-revolutions command to the rotation mechanism
31 may be used. As the temperature Tc of the liquid 64, a detected
value from a temperature sensor (not shown) which is provided at a
bath 62 can be used. As for the temperature Tc of the liquid 64, a
temperature command from an adjustment mechanism 66 may be
used.
[0062] The controller 50 then sets target pressing force Pp*, with
which the cleaning tool 11 is to be pressed against the
self-cleaning member 60, on the basis of the number Ns of
revolutions and the temperature Tc (S24) and ends the present
process. In the process in S24, the target pressing force Pp* is
set such that the target pressing force Pp* tends to increase with
increase in the number Ns of revolutions and tends to increase with
increase in the temperature Tc of the liquid 64. FIG. 8 is a graph
showing an example of a relationship between the number Ns of
revolutions and the temperature Tc, and the target pressing force
Pp*. Note that although FIG. 8 shows an example where the target
pressing force Pp* increases linearly with increase in the number
Ns of revolutions or the temperature Tc, the present invention is
not limited to this example. For example, the target pressing force
Pp* may increase in a stepwise manner with increase in the number
Ns of revolutions or the temperature Tc or the relationship between
the number Ns of revolutions and the temperature Tc, and the target
pressing force Pp* may be curvilinearly indicated. By way of
example, the relationship between the number Ns of revolutions and
the temperature Tc, and the target pressing force Pp* can be
defined in advance as a map through, e.g., an experiment, and the
process in S24 can be performed on the basis of the map and the
number Ns of revolutions and the temperature Tc that are read. Note
that the present invention is not limited to this example and that
the controller 50 may set the target pressing force Pp* on the
basis of the number Ns of revolutions and the temperature Tc by
various types of methods. When the controller 50 ends the present
process, the controller 50 controls a holding mechanism 32 such
that the cleaning tool 11 is pressed against the self-cleaning
member 60 with the target pressing force Pp*.
[0063] The studies by the present inventor have discovered that
friction between the cleaning tool 11 and the self-cleaning member
60 tends to decrease with increase in the number Ns of revolutions
of the cleaning tool 11. For this reason, in a substrate cleaning
apparatus 20 according to the second embodiment, the cleaning tool
11 is pressed against the self-cleaning member 60 with first
pressing force Pp1 when the cleaning tool 11 is rotating at a first
rotational speed Ns1. The cleaning tool 11 is pressed against the
self-cleaning member 60 with second pressing force Pp2 (Pp2>Pp1)
larger than the first pressing force Pp1 when the cleaning tool 11
is rotating at a second rotational speed Ns2 (Ns2>Ns1) higher
than the first rotational speed Ns1. This allows inhibition of a
situation where a full effect cannot be obtained due to
insufficient friction between the cleaning tool 11 and the
self-cleaning member 60 when the number Ns of revolutions of the
cleaning tool 11 is large. That is, the substrate cleaning
apparatus 20 according to the second embodiment can press the
cleaning tool 11 against the self-cleaning member 60 with suitable
pressing force and self-clean the cleaning tool 11.
[0064] The studies by the present inventor have discovered that
friction between the cleaning tool 11 and the self-cleaning member
60 tends to decrease with increase in the temperature T of the
liquid 64. For this reason, in the substrate cleaning apparatus 20
according to the second embodiment, the cleaning tool 11 is pressed
against the self-cleaning member 60 with the first pressing force
Pp1 when the temperature Tc of the liquid 64 is a first temperature
Tc1. The cleaning tool 11 is pressed against the self-cleaning
member 60 with the second pressing force Pp2 (Pp2>Pp1) larger
than the first pressing force Pp1 when the temperature Tc of the
liquid 64 is a second temperature Tc2 (Tc2>Tc1) higher than the
first temperature Tc1. This allows inhibition of a situation where
a full effect cannot be obtained due to insufficient friction
between the cleaning tool 11 and the self-cleaning member 60 when
the temperature Tc of the liquid 64 is high. That is, the substrate
cleaning apparatus 20 according to the second embodiment can press
the cleaning tool 11 against the self-cleaning member 60 with
suitable pressing force and self-clean the cleaning tool 11.
[0065] Note that although the target pressing force Pp* is set on
the basis of the number Ns of revolutions of the cleaning tool 11
and the temperature Tc of the liquid 64 in the substrate cleaning
apparatus 20 according to the second embodiment, the target
pressing force Pp* may be set on the basis of one of the number Ns
of revolutions and the temperature Tc. The target pressing force
Pp* may be set on the basis of another parameter instead of or in
addition to these parameters. By way of example, the target
pressing force Pp* may be set so as to increase with increase in
the number of times the substrate Wf is cleaned by the cleaning
tool 11. Alternatively, the target pressing force Pp* may be set at
a value larger when a chemical solution containing a surfactant is
used as the liquid 64 than when ultrapure water is used as the
liquid 64. Alternatively, the target pressing force Pp* may be set
on the basis of a material for the self-cleaning member 60.
Alternatively, the target pressing force Pp* may be set so as to
increase or decrease with increase in a time period of contact
between the cleaning tool 11 and the self-cleaning member 60.
Third Embodiment
[0066] A substrate cleaning apparatus 20 according to a third
embodiment is different from the substrate cleaning apparatus 20
according to the first embodiment in that the substrate cleaning
apparatus 20 has, as a self-cleaning member 60, a first member (a
first self-cleaning member) 60A which is formed of a first material
and a second member (a second self-cleaning member) 60B which is
formed of a second material, and the other components are the same
as those of the substrate cleaning apparatus 20 according to the
first embodiment. The first material here is, for example, an
inorganic oxide-based material or an organic polymer-based material
(a first organic polymer-based material) in which surface free
energy has a relatively large hydrogen-bonding component due to the
presence of a polar group in a molecular structure. The second
material is, for example, an organic polymer-based material (a
second organic polymer-based material) in which surface free energy
has a relatively large dispersion force component due to the
absence of a polar group in a molecular structure.
[0067] FIG. 9 is a view showing an example of a combination of a
bath and a self-cleaning member according to the third embodiment.
As shown in FIG. 9, in the third embodiment, the first member 60A
and the second member 60B are arranged in a bath 62. Note that the
present invention is not limited to this example, the first member
60A and the second member 60B may be arranged in separate baths 62.
Alternatively, the bath 62 may not be provided. Note that, even
when the bath 62 is not provided, self-cleaning of a cleaning tool
11 may be performed with supply of a liquid 64 by a transport
mechanism 65, i.e., while the liquid 64 is, for example,
continuously run over the cleaning tool 11.
[0068] FIG. 10 is a flowchart showing an example of a self-cleaning
member selection process to be executed by a controller 50
according to the third embodiment. By way of example, the process
is executed upon activation of the substrate cleaning apparatus 20
or at a time when an input module 52 receives external input. When
the present process is executed, the controller 50 judges on the
basis of the external input whether the first member 60A is
selected (S42). By way of example, this process can be performed by
referring to a prescribed region of a memory (not shown) of the
controller 50. When the first member 60A is selected (YES in S42),
the controller 50 sets the first member 60A as a self-cleaning
member and ends the present process. On the other hand, when the
first member 60A is not selected (NO in S42), the controller 50
sets the second member 60B as the self-cleaning member and ends the
present process. The controller 50 executes self-cleaning of the
cleaning tool 11 using the self-cleaning member 60 selected by the
present process.
[0069] Suitable materials for the self-cleaning member 60 that
self-cleans the cleaning tool 11 are assumed to differ depending on
processing debris accumulated at the cleaning tool 11. For example,
when the self-cleaning member 60 is intended for processing debris,
such as abrasive grains, in which surface free energy has a larger
hydrogen-bonding component, it is considered preferable to use, as
the self-cleaning member 60, the first member 60A that is formed of
an inorganic oxide-based material or an organic polymer-based
material having a polar group in a molecular structure. When the
self-cleaning member 60 is intended for processing debris, such as
organic complexes, in which surface free energy has a larger
dispersion force component, it is considered preferable to use, as
the self-cleaning member 60, the second member 60B that is formed
of an organic polymer-based material having no polar group in a
molecular structure. To this end, the substrate cleaning apparatus
20 according to the third embodiment selects the self-cleaning
member 60 on the basis of external input, and self-cleaning of the
cleaning tool 11 can be executed by the suitable self-cleaning
member 60. This makes it possible to perform highly effective
self-cleaning of a cleaning tool in a short time period.
[0070] Note that there is also available an inorganic oxide-based
material, such as quartz, in which a hydrogen-bonding component of
surface free energy as described above decreases significantly with
increase in temperature. For this reason, when warming of the
liquid 64 is used in combination, a material, such as PMMA, which
is an organic polymer-based material and has a relatively large
hydrogen-bonding component even at high temperatures due to the
presence of a polar group in a molecular structure may be used for
a cleaning tool which is intended for processing debris having a
larger hydrogen-bonding component. In other words, the first member
60A may be formed of a material in which surface free energy has a
larger hydrogen-bonding component and a smaller dispersion force
component than the second member 60B at the time of self-cleaning
of the cleaning tool 11.
Fourth Embodiment
[0071] A substrate cleaning apparatus 20 according to a fourth
embodiment has the same configuration as the substrate cleaning
apparatus 20 according to the third embodiment. The substrate
cleaning apparatus 20 according to the fourth embodiment is
different from the substrate cleaning apparatus 20 according to the
third embodiment in that a cleaning tool 11 is brought into contact
with both a first member 60A and a second member 60B.
[0072] FIG. 11 is a flowchart showing an example of a self-cleaning
process to be executed by a controller 50 according to the fourth
embodiment. This process is executed when the cleaning tool 11 is
self-cleaned. When the self-cleaning process is executed, the
controller 50 first executes self-cleaning processing by the first
member 60A by bringing the cleaning tool 11 into contact with the
first member 60A while rotating the cleaning tool 11 (S52). The
controller 50 then executes self-cleaning processing by the second
member 60B by bringing the cleaning tool 11 into contact with the
second member 60B while rotating the cleaning tool 11 (S54) and
ends the present process.
[0073] According to the fourth embodiment, self-cleaning of the
cleaning tool 11 is executed by bringing the cleaning tool 11 into
contact with the first member 60A that is formed of an inorganic
oxide-based material or an organic polymer-based material having a
polar group in a molecular structure while rotating the cleaning
tool 11 and then bringing the cleaning tool 11 into contact with
the second member 60B that is formed of an organic polymer-based
material having no polar group in a molecular structure while
rotating the cleaning tool 11. This makes it possible to first
remove processing debris, such as abrasive grains, in which surface
free energy has a larger hydrogen-bonding component, from the
cleaning tool 11 and then remove processing debris, such as organic
complexes, in which surface free energy has a larger dispersion
force component, from the cleaning tool 11. By this method, highly
effective self-cleaning of a cleaning tool can be performed in a
short time period.
[0074] Although the embodiments of the present invention have been
described above, the above-described embodiments of the invention
are intended for easy understanding of the present invention and
are not intended to limit the present invention. It is apparent
that the present invention can be changed and altered without
departing from the spirit thereof and include its equivalents. The
embodiments and modifications can be arbitrarily combined in a
range where at least a part of the above-described problems can be
solved or a range where at least a part of the effects can be
produced. The components described in the claims and the
specification can be arbitrarily combined or omitted.
[0075] The present application claims priority from Japanese Patent
Application No. 2018-048217 filed on Mar. 15, 2018. All disclosures
including the specifications, claims, drawings, and abstract of
Japanese Patent Application No. 2018-048217 are incorporated herein
by reference in its entirety. All disclosures including the
specifications, claims, drawings, and abstract of Japanese Patent
Laid-Open No. 2005-012238 (PTL 1) are incorporated herein by
reference in its entirety.
REFERENCE SIGNS LIST
[0076] 10 substrate processing apparatus [0077] 11 cleaning tool
[0078] 11A pen member [0079] 11B roll member [0080] 20 substrate
cleaning apparatus [0081] 31 rotation mechanism [0082] 32 holding
mechanism [0083] 40 support member [0084] 42 supply module [0085]
50 controller [0086] 52 input module [0087] 60 self-cleaning member
[0088] 60A first member (first self-cleaning member) [0089] 60B
second member (second self-cleaning member) [0090] 62 bath [0091]
64 liquid [0092] 65 transport mechanism [0093] 66 adjustment
mechanism [0094] 67 vibration module [0095] 68 jetting module
* * * * *