U.S. patent application number 16/112785 was filed with the patent office on 2019-05-30 for package structure and manufacturing method thereof.
This patent application is currently assigned to Powertech Technology Inc.. The applicant listed for this patent is Powertech Technology Inc.. Invention is credited to Shang-Yu Chang Chien, Hung-Hsin Hsu, Nan-Chun Lin.
Application Number | 20190164948 16/112785 |
Document ID | / |
Family ID | 66632643 |
Filed Date | 2019-05-30 |
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United States Patent
Application |
20190164948 |
Kind Code |
A1 |
Chang Chien; Shang-Yu ; et
al. |
May 30, 2019 |
PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF
Abstract
A package structure including a redistribution structure, a die,
at least one connecting module, a first insulating encapsulant, a
chip stack, and a second insulating encapsulant. The die is
disposed on and electrically connected to the redistribution
structure. The connecting module is disposed on the redistribution
structure. The connecting module includes a protection layer and a
plurality of conductive bars embedded in the protection layer. The
first insulating encapsulant encapsulates the die and the
connecting module. The chip stack is disposed on the first
insulating encapsulant and the die. The chip stack is electrically
connected to the connecting module. The second insulating
encapsulant encapsulates the chip stack.
Inventors: |
Chang Chien; Shang-Yu;
(Hsinchu County, TW) ; Hsu; Hung-Hsin; (Hsinchu
County, TW) ; Lin; Nan-Chun; (Hsinchu County,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Powertech Technology Inc. |
Hsinchu County |
|
TW |
|
|
Assignee: |
Powertech Technology Inc.
Hsinchu County
TW
|
Family ID: |
66632643 |
Appl. No.: |
16/112785 |
Filed: |
August 27, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
62591166 |
Nov 27, 2017 |
|
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|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/486 20130101;
H01L 23/5226 20130101; H01L 23/3135 20130101; H01L 24/97 20130101;
H01L 23/3128 20130101; H01L 23/5384 20130101; H01L 24/20 20130101;
H01L 2224/02371 20130101; H01L 2224/32145 20130101; H01L 24/19
20130101; H01L 2221/68381 20130101; H01L 2224/73204 20130101; H01L
2224/73267 20130101; H01L 24/17 20130101; H01L 25/03 20130101; H01L
2224/48145 20130101; H01L 23/49816 20130101; H01L 2224/73265
20130101; H01L 2225/0651 20130101; H01L 24/09 20130101; H01L
2224/02372 20130101; H01L 23/562 20130101; H01L 2225/06558
20130101; H01L 25/0657 20130101; H01L 24/48 20130101; H01L
2221/68372 20130101; H01L 2224/73215 20130101; H01L 2924/181
20130101; H01L 21/561 20130101; H01L 21/76843 20130101; H01L
23/5389 20130101; H01L 2224/83191 20130101; H01L 2225/06562
20130101; H01L 21/6835 20130101; H01L 2225/06506 20130101; H01L
24/73 20130101; H01L 21/563 20130101; H01L 24/45 20130101; H01L
2224/49052 20130101; H01L 2225/06548 20130101; H01L 2224/48091
20130101; H01L 25/50 20130101; H01L 2221/68359 20130101; H01L 21/56
20130101; H01L 25/18 20130101; H01L 2221/68345 20130101; H01L 24/32
20130101; H01L 2224/45124 20130101; H01L 2221/68318 20130101; H01L
2224/48227 20130101; H01L 21/568 20130101; H01L 2224/48235
20130101; H01L 24/85 20130101; H01L 21/4857 20130101; H01L 23/3157
20130101; H01L 24/49 20130101; H01L 24/83 20130101; H01L 2224/45144
20130101; H01L 2224/48091 20130101; H01L 2924/00014 20130101; H01L
2224/45124 20130101; H01L 2924/00014 20130101; H01L 2224/45144
20130101; H01L 2924/00014 20130101; H01L 2224/73265 20130101; H01L
2224/32225 20130101; H01L 2224/48227 20130101; H01L 2924/00012
20130101; H01L 2224/73265 20130101; H01L 2224/32145 20130101; H01L
2224/48145 20130101; H01L 2924/00012 20130101; H01L 2224/73265
20130101; H01L 2224/32145 20130101; H01L 2224/48227 20130101; H01L
2924/00012 20130101; H01L 2924/181 20130101; H01L 2924/00012
20130101; H01L 2224/73204 20130101; H01L 2224/32225 20130101; H01L
2224/16225 20130101; H01L 2924/00012 20130101 |
International
Class: |
H01L 25/00 20060101
H01L025/00; H01L 25/18 20060101 H01L025/18; H01L 25/065 20060101
H01L025/065; H01L 23/00 20060101 H01L023/00; H01L 21/56 20060101
H01L021/56; H01L 21/48 20060101 H01L021/48 |
Claims
1. A package structure, comprising: a redistribution structure; a
die disposed on the redistribution structure and electrically
connected to the redistribution structure; at least one connecting
module disposed on the redistribution structure, wherein the
connecting modules comprises a protection layer and a plurality of
conductive bars embedded in the protection layer; a first
insulating encapsulant encapsulating the die and the connecting
module; a chip stack disposed on the first insulating encapsulant
and the die and electrically connected to the connecting module;
and a second insulating encapsulant encapsulating the chip
stack.
2. The package structure according to claim 1, further comprising a
plurality of conductive terminals disposed on the redistribution
structure opposite to the die and the connecting module.
3. The package structure according to claim 1, wherein the die has
an active surface and a rear surface opposite to the active
surface, the die comprises a plurality of conductive connectors
located on the active surface, and the conductive connectors are
directly in contact with the redistribution structure.
4. The package structure according to claim 3, further comprising
an adhesive layer sandwiched between the rear surface of the die
and the chip stack.
5. The package structure according to claim 1, wherein a material
of the protection layer is different from a material of the first
insulating encapsulant.
6. The package structure according to claim 1, further comprising a
plurality of conductive wires embedded in the second insulating
encapsulant, wherein the chip stack is electrically connected to
the connecting module through the conductive wires.
7. The package structure according to claim 1, wherein the
connecting module further comprises a plurality of conductive caps
correspondingly disposed on the conductive bars, and the protection
layer exposes at least a portion of each conductive cap.
8. The package structure according to claim 7, wherein a material
of the conductive caps comprises gold.
9. The package structure according to claim 7, wherein a material
of the conductive bars is different from a material of the
conductive caps.
10. The package structure according to claim 7, wherein surfaces of
the conductive caps, a surface of the protection layer, and a
surface of the first insulating encapsulant are substantially
coplanar.
11. A manufacturing method of a package structure, comprising:
providing a carrier; disposing a plurality of dies and a plurality
of connecting modules on the carrier, wherein each of the
connecting modules comprises a protection layer and a plurality of
conductive bars embedded in the protection layer; forming a first
insulating encapsulant on the carrier to encapsulate the dies and
the connecting modules; forming a redistribution structure over the
dies, the connecting modules, and the first insulating encapsulant;
removing the carrier from the dies, the connecting modules, and the
first insulating encapsulant; disposing a chip stack on the dies
and the first insulating encapsulant opposite to the redistribution
structure, wherein the chip stack is electrically connected to the
connecting modules; and encapsulating the chip stack by a second
insulating encapsulant.
12. The method according to claim 11, further comprising foiniing a
plurality of conductive terminals on the redistribution structure
opposite to the dies and the connecting modules.
13. The method according to claim 11, further comprising forming a
plurality of conductive wires embedded in the second insulating
encapsulant, wherein the chip stack is electrically connected to
the connecting modules through the conductive wires.
14. The method according to claim 11, further comprising performing
a singulation process.
15. The method according to claim 11, wherein a material of the
protection layer is different from a material of the first
insulating encapsulant.
16. The method according to claim 11, wherein the connecting
modules are disposed on the carrier through a picked-and-placed
process.
17. The method according to claim 11, wherein each connecting
module further comprises a plurality of conductive caps
correspondingly disposed on the conductive bars, and the protection
layer exposes at least a portion of each conductive cap.
18. The method according to claim 17, wherein the connecting
modules are disposed on the carrier such that the conductive caps
face the carrier.
19. The method according to claim 17, wherein a material of the
conductive caps comprises gold.
20. The method according to claim 11, wherein the die has an active
surface and a rear surface opposite to the active surface, the die
comprises a plurality of conductive connectors located on the
active surface, and the step of forming the first insulating
encapsulant comprises: forming an insulating material over the
carrier to cover the dies and the connecting modules; and removing
a portion of the insulating material to expose the conductive
connectors of the dies and the conductive bars of the connecting
modules.
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application claims the priority benefit of U.S.
provisional application Ser. No. 62/591,166, filed on Nov. 27,
2017. The entirety of the above-mentioned patent application is
hereby incorporated by reference herein and made a part of
specification.
BACKGROUND OF THE INVENTION
Field of the Invention
[0002] The disclosure generally relates to a package structure and
a manufacturing method thereof, and in particular, to a package
structure having a connecting module and a manufacturing method
thereof.
Description of Related Art
[0003] Development of semiconductor package technology in recent
years has focused on delivering products with smaller volume,
lighter weight, higher integration level, and lower manufacturing
cost. For multi-functional semiconductor packages, a technique for
stacking chips has been used to provide the packages with a larger
capacity to store or process data. The rapid increase in demand for
multi-functional electronic components with the improved desired
features has become a challenge to researchers in the field.
SUMMARY OF THE INVENTION
[0004] The disclosure provides a package structure and a
manufacturing method thereof, which effectively reduces the height
of the package structure at a lower manufacturing cost.
[0005] The disclosure provides a package structure including a
redistribution structure, a die, at least one connecting module, a
first insulating encapsulant, a chip stack, and a second insulating
encapsulant. The die is disposed on and electrically connected to
the redistribution structure. The connecting module is disposed on
the redistribution structure. The connecting module includes a
protection layer and a plurality of conductive bars embedded in the
protection layer. The first insulating encapsulant encapsulates the
die and the connecting module. The chip stack is disposed on the
first insulating encapsulant and the die. The chip stack is
electrically connected to the connecting module. The second
insulating encapsulant encapsulates the chip stack.
[0006] The disclosure provides a manufacturing method of a package
structure. The method includes at least the following steps. A
carrier is provided. A plurality of dies and a plurality of
connecting modules are disposed on the carrier. Each of the
connecting modules includes a protection layer and a plurality of
conductive bars embedded in the protection layer. A first
insulating encapsulant is formed on the carrier to encapsulate the
dies and the connecting modules. A redistribution structure is
formed over the dies, the connecting modules, and the first
insulating encapsulant. The carrier is removed from the dies, the
connecting modules, and the first insulating encapsulant. A chip
stack is disposed on the dies and the first insulating encapsulant
opposite to the redistribution structure. The chip stack is
electrically connected to the connecting modules. The second
insulating encapsulant encapsulates the chip stack.
[0007] Based on the above, the readily available prefabricated
connecting module may serve as vertical connecting feature within
the package structure. Due to the small thickness of the connecting
module, the size of the package structure may be effectively
reduced. In addition, the adaption of the connecting module may
result in elimination of additional carrier or thicker copper
pillars in the conventional package structure, thereby reducing the
manufacturing cost.
[0008] To make the aforementioned more comprehensible, several
embodiments accompanied with drawings are described in detail as
follows.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The accompanying drawings are included to provide a further
understanding of the invention, and are incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles presented in the disclosure.
Identical or similar numbers refer to identical or similar elements
throughout the drawings.
[0010] FIG. 1A to FIG. 1J are schematic cross-sectional views
illustrating a manufacturing method of a package structure
according to some embodiments of the disclosure.
DESCRIPTION OF THE EMBODIMENTS
[0011] Reference will now be made in detail to the present
preferred embodiments of the invention, examples of which are
illustrated in the accompanying drawings. Wherever possible, the
same reference numbers are used in the drawings and the description
to refer to the same or like parts.
[0012] FIG. 1A to FIG. 1J are schematic cross-sectional views
illustrating a manufacturing method of a package structure 10
according to some embodiments of the disclosure. Referring to FIG.
1A, a carrier 100 having a de-bonding layer 102 formed thereon is
provided. The carrier 100 may be a glass substrate or a glass
supporting board. However, they construe no limitation in the
disclosure. Other suitable substrate material may be adapted as
long as the material is able to withstand subsequent processes
while structurally supporting the package structure formed thereon.
The de-bonding layer 102 may include light to heat conversion
(LTHC) materials, epoxy resins, inorganic materials, organic
polymeric materials, or other suitable adhesive materials. However,
the disclosure is not limited thereto, and other suitable
de-bonding layers may be used in some alternative embodiments.
[0013] Referring to FIG. 1B, a plurality of dies 200 and a
plurality of connecting modules 300 are disposed on the de-bonding
layer 102 and the carrier 100. The dies 200 may include digital
dies, analog dies, or mixed signal dies. For example, the dies 200
may be application-specific integrated circuit (ASIC) dies, logic
dies, or other suitable dies. Each die 200 includes a semiconductor
substrate 202, a plurality of conductive pads 204, a passivation
layer 206, and a plurality of conductive connectors 208. In some
embodiments, the semiconductor substrate 202 may be a silicon
substrate including active components (e.g., transistors or the
like) and optionally passive components (e.g., resistors,
capacitors, inductors, or the like) formed therein. The conductive
pads 204 are distributed over the semiconductor substrate 202. The
conductive pads 204 may include aluminum pads, copper pads, or
other suitable metal pads. The passivation layer 206 is formed over
the semiconductor substrate 202 to partially cover each connection
pad 204. In other words, the passivation layer 206 has a plurality
of contact openings revealing at least a portion of each connection
pad 204. The passivation layer 206 may be a silicon oxide layer, a
silicon nitride layer, a silicon oxy-nitride layer, or a dielectric
layer formed of polymeric materials or other suitable dielectric
materials. The conductive connectors 208 are disposed on the
conductive pads 204. For example, the conductive connectors 208 may
extend into the contact openings of the passivation layer 206 to
render electrical connection with the conductive pads 204. In some
embodiments, the conductive connectors 208 may be plated on the
conductive pads 204. The plating process is, for example,
electro-plating, electroless-plating, immersion plating, or the
like. The conductive connectors 208 may take the form of conductive
posts, conductive pillars, or conductive bumps. A material of the
conductive connectors 208 includes copper, aluminum, tin, gold,
silver, alloys thereof, or other suitable conductive materials.
[0014] In some embodiments, each die 200 has an active surface 200a
and a rear surface 200b opposite to the active surface 200a. As
illustrated in FIG. 1B, the dies 200 are disposed in a face up
manner. In other words, the active surfaces 200a of the dies 200
face away from the carrier 100 while the rear surfaces 200b of the
dies 200 face toward the carrier 100. In some embodiments, the dies
200 may be attached to the carrier 100 through an adhesive layer
400. For example, the adhesive layer 400 may be disposed on the
rear surfaces 200b of the dies 200 such that the adhesive layer 400
is sandwiched between the semiconductor substrates 202 of the dies
200 and the de-bonding layer 102. The adhesive layer 400 may
temporarily enhance the adhesion between the dies 200 and the
de-bonding layer 102 to prevent die shift. In some embodiments, the
adhesive layer 400 may be a dry film and may be adhered to the
de-bonding layer 102 through a lamination process. Alternatively, a
solution of the adhesive layer 400 (liquid type) may be coated onto
the de-bonding layer 102 through a coating process. Subsequently,
the solution is dried or cured to form a solid layer of the
adhesive layer 400. The adhesive layer 400 may be made of B-stage
materials. For example, the adhesive layer 400 may include resins
constituting a die attach films (DAF). However, the disclosure is
not limited thereto. In some alternative embodiments, other
materials having adhesion properties may be adapted as the material
for the adhesive layer 400. In some embodiments, the adhesive layer
400 is optional. When the adhesive layer 400 is not being utilized,
the dies 200 may be directly attached onto the de-bonding layer
102.
[0015] As illustrated in FIG. 1B, the connecting modules 300 are
disposed along the periphery of at least one die 200. Each of the
connecting modules 300 includes a plurality of conductive bars 302,
a plurality of barrier layers 304, a plurality of conductive caps
306, and a protection layer 308. The conductive bars 302 may be
shaped as cylindrical columns. However, the disclosure is not
limited thereto. In some alternative embodiments, the conductive
bars 302 may take the form of polygonal columns or other suitable
shapes. A material of the conductive bars 302 includes copper,
aluminum, nickel, tin, gold, silver, alloys thereof, or the like.
The conductive caps 306 are correspondingly disposed on the
conductive bars 302. The conductive caps 306 are disposed on the
conductive bars 302 to further enhance the electrical connection
and the wire bondability of the connecting modules 300 with other
subsequently formed elements. In some embodiments, a material of
the conductive caps 306 is different from the material of the
conductive bars 302. For example, the conductive caps 306 may
include gold or other metallic material with excellent electrical
conductivity and good wire bondability. In some embodiments, the
barrier layer 304 may include nickel, solder, silver, or other
suitable conductive materials. Each barrier layer 304 is sandwiched
between a conductive cap 306 and a conductive bar 302 to prevent
diffusion of atoms between the conductive cap 306 and the
conductive bar 302. For example, when the conductive bar 302, the
barrier layer 304, and the conductive cap 306 are respectively made
of copper, nickel, and gold, the barrier layer 304 formed of nickel
may prevent the copper atoms of the conductive bar 302 from
diffusing into the conductive cap 306. The contamination of the
conductive cap 306 with copper would cause the conductive cap 306
to oxidize easily, thereby resulting in poor wire bondability.
However, with the aid of the barrier layer 304, the foregoing
adverse effect may be sufficiently prevented. In some embodiments,
the conductive caps 306 and the barrier layers 304 may be omitted
if the conductive bars 302 already have sufficient wire bondability
with the subsequently formed elements.
[0016] As illustrated in FIG. 1B, the conductive bars 302, the
barrier layers 304, and the conductive caps 306 are embedded in the
protection layer 308. However, the protection layer 308 exposes at
least a portion of each of the conductive bars 302 and at least a
portion of each of the conductive caps 306. For example, the
protection layer 308 may laterally encapsulates the conductive bars
302, the barrier layers 304, and the conductive caps 306.
Meanwhile, surfaces 302a of the conductive bars 302 may be exposed
by the protection layer 308. In some embodiments, the surfaces 302a
of the conductive bars 302 are substantially coplanar to a first
surface 308a of the protection layer 308. Similarly, surfaces 306b
of the conductive caps 306 may also be exposed by the protection
layer 308. That is, the surfaces 306b of the conductive caps 306
are substantially coplanar to a second surface 308b (the surface of
the protection layer 308 opposite to the first surface 308a) of the
protection layer 308. It should be noted that the configuration
shown in FIG. 1B merely serves as an exemplary illustration, and
the disclosure is not limited thereto. In some alternative
embodiments, the protection layer 308 may cover surfaces 302a of
the conductive bars 302 such that the conductive bars 302 are not
revealed. In other words, the first surface 308a of the protection
layer 308 may be located at a level height higher than the height
of the top surfaces 302a of the conductive bars 302. In some
embodiments, a material of the protection layer 308 includes
polymers, epoxies, molding compounds, or other suitable dielectric
materials.
[0017] In some embodiments, the connecting modules 300 are
pre-fabricated before being placed on the carrier 100. In some
embodiments, the connecting modules 300 may be placed on the
carrier 100 through a picked-and-placed process. For example, the
connecting modules 300 are picked-and-placed onto the carrier 100
and the de-bonding layer 102 by a die bonder, a chip sorter, or a
SMT (Surface Mount Technology) machine. As illustrated in FIG. 1B,
the connecting modules 300 are placed such that the conductive caps
306 face the carrier 100. That is, the connecting modules 300 is
placed to render the conductive caps 306 closer to the carrier 100
than the conductive bars 302. A number of the conductive bars 302
within each connecting module 300 may vary depending on design
requirements. From a top view (not illustrated), the conductive
bars 302 are distributed within the protection layer 308 such that
a distance between conductive bars 302 is minimized while
maintaining effective electrical isolation between the conductive
bars. In some embodiments, the connecting modules 300 may exhibit a
square shape, rectangular shape, a ring shape, or other geometries
from the top view.
[0018] Referring to FIG. 1C, an insulating material 512 is formed
on the carrier 100 and the de-bonding layer 102 to cover the dies
200 and the connecting modules 300. In other words, the insulating
material 512 encapsulates the dies 200 and the connecting modules
300. In some embodiments, a material of the insulating material 512
may be different from the material of the protection layer 308 of
the connecting modules 300. For example, the insulating material
512 may include a molding compound formed by a molding process or
an insulating material such as epoxy, silicone, or other suitable
resins. In some embodiments, the insulating material 512 is formed
by an over-molding process such that the dies 200 and the
connecting modules 300 are not revealed. For example, as
illustrated in FIG. 1C, a top surface 512a of the insulating
material 512 is located at a level height higher than the height of
the first surface 308a of the protection layer 308, the surfaces
302a of the conductive bars 302, and top surfaces 208a of the
conductive connectors 208.
[0019] Referring to FIG. 1D, a thickness of the insulating material
512 is reduced to form a first insulating encapsulant 510. For
example, a portion of the insulating material 512 is removed until
the conductive connectors 208 of the dies 200 and the conductive
bars 302 of the connecting modules 300 are both exposed. In some
embodiments, the insulating material 512 may be removed through a
planarization process. The planarization process includes, for
example, Chemical Mechanical Polishing (CMP), mechanical grinding,
etching, or other suitable process. In some embodiments, the
planarization process may further grind the connecting modules 300,
the insulating material 512, and the dies 200 to reduce the overall
thickness of the subsequently formed package structure 10. After
the planarization process, the first insulating encapsulant 510 is
formed on the carrier 100 and the de-bonding layer 102 to laterally
encapsulate the dies 200 and the connecting modules 300. In some
embodiments, the first surface 308a of the protection layer 308, a
first surface 510a of the first insulating encapsulant 510, the
surfaces 302a of the conductive bars 302, and the top surfaces 208a
of the conductive connectors 208 are substantially coplanar to each
other. As mentioned above, since the first insulating encapsulant
510 and the protection layer 308 of the connecting modules 300 are
made of different materials, the first insulating encapsulant 510
and the protection layer 308 are considered as two distinct layers.
In other words, a clear interface may be seen between the first
insulating encapsulant 510 and the protection layer 308.
[0020] Referring to FIG. 1E, a redistribution structure 600 is
formed on the dies 200, the connecting modules 300, and the first
insulating encapsulant 510. The redistribution structure 600 may
include at least one dielectric layer 602, a plurality of
conductive patterns 604, and a plurality of conductive vias 606.
The dielectric layers 602 may be formed by suitable fabrication
techniques such as spin-on coating, chemical vapor deposition
(CVD), plasma-enhanced chemical vapor deposition (PECVD), or the
like. The dielectric layers 602 may be made of non-organic or
organic dielectric materials such as silicon oxide, silicon
nitride, silicon carbide, silicon oxynitride, polyimide,
benzocyclobutene (BCB), or the like. On the other hand, the
conductive patterns 604 and the conductive vias 606 may be formed
by sputtering, evaporation, electro-less plating, or
electroplating. The conductive patterns 604 and the conductive vias
606 are embedded in the dielectric layers 602. The dielectric
layers 602 and the conductive patterns 604 may be stacked
alternately. The conductive vias 606 penetrate through the
dielectric layers 602 to electrically connect the conductive
patterns 604 to each other. The conductive patterns 604 and the
conductive vias 606 may be made of copper, aluminum, nickel, gold,
silver, tin, a combination thereof, a composite structure of
copper/nickel/gold, or other suitable conductive materials.
[0021] As illustrated in FIG. 1E, the redistribution structure 600
includes four dielectric layers 602. However, the number of the
dielectric layers 602 is not limited and may be adjusted based on
circuit design. The bottom dielectric layer 602 may have a
plurality of contact openings 602a partially exposing the
conductive bars 302 of the connecting modules 300 and the
conductive connectors 208 of the dies 200. The conductive vias 606
disposed in the contact openings 602a may be directly in contact
with the conductive bars 302 of the connecting modules 300 and the
conductive connectors 208 of the dies 200. In other words, the
conductive connectors 208 of the dies 200 are directly in contact
with the redistribution structure 600 to render the electrical
connection between the dies 200 and the redistribution structure
600. Similarly, the conductive bars 302 of the connecting modules
300 are also directly in contact with the redistribution structure
600 to render the electrical connection between the connecting
modules 300 and the redistribution structure 600. The middle
dielectric layers 602 expose part of the bottom conductive patterns
604 such that the bottom conductive patterns 604 may be
electrically connected to other conductive patterns 604 (for
example, the middle conductive patterns 604) through the conductive
vias 606. The top dielectric layer 602 has a plurality of contact
openings 602b exposing a portion of the middle conductive patterns
604. The top conductive vias 606 may extend into the contact
openings 602b to electrically connect the top conductive patterns
604 and the middle conductive patterns 604. On the other hand, the
top conductive patterns 604 are disposed on the top dielectric
layer 602 for electrical connection in the subsequent processes. In
some embodiments, the top conductive patterns 604 may be referred
to as under-bump metallization (UBM) patterns.
[0022] In some embodiments, the redistribution structure 600 may be
used to reroute electrical signals to/from the die 200 and may
expand in a wider area than the die 200. Therefore, in some
embodiments, the redistribution structure 600 may be referred to as
a "fan-out redistribution structure."
[0023] Referring to FIG. 1F, the de-bonding layer 102 and the
carrier 100 are removed from the dies 200, the connecting modules
300, the adhesive layer 400, and the first insulating encapsulant
510. As mentioned above, the de-bonding layer 102 may be an LTHC
layer. Upon exposure to a UV laser light, the de-bonding layer 102
and the carrier 100 may be peeled off and separated from the
conductive caps 306 and the protection layer 308 of the connecting
modules 300, the adhesive layer 400, and the first insulating
encapsulant 510. Upon removal of the carrier 100 and the de-bonding
layer 102, the second surface 308b of the protection layer 308, the
surfaces 306b of the conductive caps 306, and a second surface 510b
(the surface of the first insulating encapsulant 510 opposite to
the first surface 510a) of the first insulating encapsulant 510 are
exposed. As illustrated in FIG. 1F, the surfaces 306b of the
conductive caps 306, the second surface 308b of the protection
layer 308, and the second surface 510b of the first insulating
encapsulant 510 are substantially coplanar to each other.
[0024] Referring to FIG. 1G, the structure illustrated in FIG. 1F
is flipped upside down such that the dies 200, the connecting
modules 300, and the first insulating encapsulant 510 are shown to
be disposed on/above the redistribution structure 600. Thereafter,
a chip stack 710 is disposed on the dies 200 and the first
insulating encapsulant 510 opposite to the redistribution structure
600. For example, the chip stack 710 may be placed on the adhesive
layer 400 and the second surface 510b of the first insulating
encapsulant 510. That is, the adhesive layer 400 is sandwiched
between the chip stack 710 and the rear surface 200b of the die
200. In some embodiments, the chip stack 710 may be constituted by
a plurality of chips stacked on each other. The chips may include
memory chips having non-volatile memory, such as NAND flash.
However, the disclosure is not limited thereto. In some alternative
embodiments, the chips of the chip stack 710 may be chips capable
of performing other functions, such as logic function, computing
function, or the like. A chip attachment layer may be seen between
two adjacent chips in the chip stack 710 to enhance the adhesion
between these two chips.
[0025] The chip stack 700 may be electrically connected to the
conductive caps 306 of the connecting modules 300 through a
plurality of conductive wires 720. For example, after the chip
stack 710 is disposed on the adhesive layer 400 and the first
insulating encapsulant 510, a plurality of conductive wires 720 may
be formed through a wire-bonding process. One end of the conductive
wire 720 is connected to at least one chip of the chip stack 710.
On the other hand, another end of the conductive wire 720 is
connected to the surface 306b of the conductive cap 306. A material
of the conductive wires 720 may include gold, aluminum, or other
suitable conductive materials. In some embodiments, the material of
the conductive wires 720 is identical to the material of the
conductive caps 306.
[0026] Referring to FIG. 1H, a second insulating encapsulant 520 is
formed on the first insulating encapsulant 510 and the connecting
modules 300 to encapsulate the chip stack 710 and the conductive
wires 720. A material of the second insulating encapsulant 520 may
be the same or different from that of the first insulating
encapsulant 510. For example, the material of the second insulating
encapsulant 520 may include epoxy, molding compound, or other
suitable insulating materials. In some embodiments, the material of
the second insulating encapsulant 520 may have a low moisture
absorption rate. The second insulating encapsulant 520 may be
formed through compression molding, transfer molding, or other
encapsulation processes. The second insulating encapsulant 520
provides physical support, mechanical protection, and electrical
and environmental isolation for the chip stack 710 and the
conductive wires 720. In other words, the chip stack 710 and the
conductive wires 720 are embedded in the second insulating
encapsulant 520.
[0027] Referring to FIG. 1I, a plurality of conductive terminals
800 is formed on the redistribution structure 600 opposite to the
dies 200 and the connecting modules 300. In some embodiments, the
conductive terminals 800 are disposed on the UBM patterns (the
bottom conductive patterns 604 shown in FIG. 1I) of the
redistribution structure 600. The conductive terminals 800 may be
formed by a ball placement process and/or a reflow process. The
conductive terminals 800 may be conductive bumps, such as solder
balls. However, the disclosure is not limited thereto. In some
alternative embodiments, the conductive terminals 800 may take
other possible forms and shapes based on design requirements. For
example, the conductive terminals 800 may take the form of
conductive pillars or conductive posts.
[0028] Referring to FIG. 1J, after forming the conductive terminals
800, a singulation process is performed to obtain a plurality of
package structures 10. The singulation process includes, for
example, cutting with a rotating blade or a laser beam.
[0029] Based on the above, the readily available prefabricated
connecting module may serve as vertical connecting feature within
the package structure. Due to the small thickness of the connecting
module, the size of the package structure may be effectively
reduced. In addition, the adaption of the connecting module may
result in elimination of additional carrier or thicker copper
pillars in the conventional package structure, thereby reducing the
manufacturing cost.
[0030] It will be apparent to those skilled in the art that various
modifications and variations can be made to the embodiments and
concepts disclosed herein without departing from the scope or
spirit of the invention. In view of the foregoing, it is intended
that the present disclosure cover modifications and variations of
this invention provided they fall within the scope of the following
claims and their equivalents.
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