U.S. patent application number 16/020585 was filed with the patent office on 2018-11-01 for cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same.
The applicant listed for this patent is Samsung Electronics Co., Ltd.. Invention is credited to Sol HAN, Chae Lyoung KIM, INGI KIM, Tae-Hong KIM, YUNGJUN KIM, HYOSAN LEE, Jung-Min OH, BOUN YOON.
Application Number | 20180315613 16/020585 |
Document ID | / |
Family ID | 60039564 |
Filed Date | 2018-11-01 |
United States Patent
Application |
20180315613 |
Kind Code |
A1 |
KIM; Chae Lyoung ; et
al. |
November 1, 2018 |
CLEANING APPARATUS, CHEMICAL MECHANICAL POLISHING SYSTEM INCLUDING
THE SAME, CLEANING METHOD AFTER CHEMICAL MECHANICAL POLISHING, AND
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE SAME
Abstract
A cleaning apparatus for removing particles from a substrate is
provided. The cleaning apparatus includes a first cleaning unit
including a first dual nozzle supplying, to a substrate, a first
chemical liquid and a first spray including a first liquid
dissolving the first chemical liquid, and a second cleaning unit
including a second dual nozzle supplying, to the substrate, a
second chemical liquid different from the first chemical liquid and
a second spray including a second liquid dissolving the second
chemical liquid and being the same as the first liquid.
Inventors: |
KIM; Chae Lyoung;
(Hwaseong-si, KR) ; KIM; Tae-Hong; (Seoul, KR)
; OH; Jung-Min; (Incheon, KR) ; KIM; YUNGJUN;
(Seoul, KR) ; KIM; INGI; (Hwaseong-si, KR)
; YOON; BOUN; (Seoul, KR) ; LEE; HYOSAN;
(Hwaseong-si, KR) ; HAN; Sol; (Gyeonggi-do,
KR) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Samsung Electronics Co., Ltd. |
Suwon-si |
|
KR |
|
|
Family ID: |
60039564 |
Appl. No.: |
16/020585 |
Filed: |
June 27, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
15428963 |
Feb 9, 2017 |
|
|
|
16020585 |
|
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|
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/67046 20130101;
B24B 53/017 20130101; H01L 21/67173 20130101; H01L 21/02057
20130101; H01L 21/02074 20130101; H01L 21/02065 20130101; H01L
21/67051 20130101; H01L 21/67219 20130101; B24B 37/20 20130101;
H01L 21/30625 20130101 |
International
Class: |
H01L 21/306 20060101
H01L021/306; H01L 21/67 20060101 H01L021/67; B24B 37/20 20060101
B24B037/20; H01L 21/02 20060101 H01L021/02; B24B 53/017 20060101
B24B053/017 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 15, 2016 |
KR |
10-2016-0045909 |
Jul 25, 2016 |
KR |
10-2016-0094385 |
Claims
1. A cleaning apparatus, comprising: a first cleaning unit
including a dual nozzle, the dual nozzle connected to supply a
first chemical liquid from a first nozzle and a first spray from a
second nozzle to a substrate, wherein the dual nozzle is configured
to move in a first direction while the first chemical liquid and
the first spray are supplied to the substrate, wherein the first
direction is a direction in which the first spray is supplied ahead
of the first chemical liquid to the substrate.
2. The cleaning apparatus of claim 1, wherein the first direction
is a circular movement direction.
3. The cleaning apparatus of claim 1, further comprising a second
cleaning unit including a brush and a third nozzle, wherein the
brush and the third nozzle are configured to brush a surface of the
substrate while supplying a second chemical liquid from the third
nozzle onto the substrate.
4. The cleaning apparatus of claim 3, wherein the first chemical
liquid includes an acidic solution, and the second chemical liquid
includes an alkaline solution.
5. The cleaning apparatus of claim 3, wherein the first chemical
liquid includes hydrofluoric acid, and the second chemical liquid
includes an ammonia water.
6. The cleaning apparatus of claim 5, wherein the hydrofluoric acid
has a weight percentage of 0.01 wt % to 2 wt % in relation to the
first chemical liquid.
7. The cleaning apparatus of claim 5, wherein the ammonia water has
ammonia (NH.sub.4OH) in the ammonia water with a weight percentage
of 0.01 wt % to 4 wt % of the ammonia water.
8. The cleaning apparatus of claim 1, wherein the first nozzle is a
low-pressure nozzle configured to supply the first chemical liquid
at a first pressure, and wherein the second nozzle is a
high-pressure nozzle connected to the first nozzle in the first
direction and configured to supply the first spray at a second
pressure higher than the first pressure.
9. The cleaning apparatus of claim 1, wherein the first cleaning
unit further comprises a first arm configured to move the dual
nozzle above the substrate, and wherein the first arm is configured
to move the dual nozzle in the first direction from above a center
of the substrate toward above a periphery of the substrate while
supplying the first chemical liquid and the first spray onto the
substrate.
10. The cleaning apparatus of claim 1, further comprising a second
cleaning unit including a second dual nozzle configured to supply a
second spray ahead of a second chemical liquid while the second
dual nozzle moves from above a center of the substrate toward above
a periphery of the substrate.
11. A chemical mechanical polishing system, comprising: a substrate
transfer apparatus configured to transfer a substrate; a polishing
apparatus including a pad configured to polish the substrate; and a
cleaning apparatus configured to clean the substrate polished by
the pad to remove particles generated in the polishing apparatus,
wherein the cleaning apparatus comprises a first cleaning unit
including a first dual nozzle connected to supply, to the
substrate, a first chemical liquid and a first spray including a
first liquid, the first dual nozzle including a first nozzle
connected to supply the first chemical liquid and a second nozzle
configured to supply the first spray, wherein the first dual nozzle
is configured to move in a first direction and the first direction
is a direction in which the first spray is supplied ahead of the
first chemical liquid to the substrate.
12. The chemical mechanical polishing system of claim 11, wherein
the first direction is a circular movement direction.
13. The chemical mechanical polishing system of claim 11, wherein
the cleaning apparatus further comprises a second cleaning unit
including a brush and a third nozzle, wherein the brush is
configured to brush a surface of the substrate while the third
nozzle supplies a second chemical liquid from the third nozzle onto
the substrate.
14. The chemical mechanical polishing system of claim 13, wherein
the first cleaning unit is configured to clean the substrate after
the second cleaning unit cleans the substrate.
15. The chemical mechanical polishing system of claim 11, wherein
the first chemical liquid includes an acidic solution.
16. The chemical mechanical polishing system of claim 11, wherein
the first dual nozzle is configured to move from above a center of
the substrate toward above a periphery of the substrate while the
first dual nozzle supplies the first chemical liquid and the first
spray on the substrate.
17. The chemical mechanical polishing system of claim 11, wherein
the first nozzle is a low-pressure nozzle configured to supply the
first chemical liquid at a first pressure, and wherein the second
nozzle is a high-pressure nozzle connected to the first nozzle in
the first direction and configured to supply the first spray at a
second pressure higher than the first pressure.
18. The chemical mechanical polishing system of claim 11, wherein
the first cleaning unit further comprises a first arm configured to
move the first dual nozzle above the substrate, and wherein the
first arm is configured to move the first dual nozzle in the first
direction from above a center of the substrate toward above a
periphery of the substrate while supplying the first chemical
liquid and the first spray onto the substrate.
19. The chemical mechanical polishing system of claim 11, wherein
the cleaning apparatus further comprises a second cleaning unit
including a second dual nozzle configured to supply a second spray
ahead of a second chemical liquid while the second dual nozzle
moves from above a center of the substrate toward above a periphery
of the substrate.
20. The chemical mechanical polishing system of claim 19, wherein
the second cleaning unit further comprises a second arm configured
to move the second dual nozzle above the substrate, wherein the
second arm is configured to move the second dual nozzle in a second
direction from above a center of the substrate toward above a
periphery of the substrate while supplying the first chemical
liquid and the first spray onto the substrate, and wherein the
second direction is a circular movement direction.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional application of U.S. patent
application Ser. No. 15/428,963 filed on Feb. 9, 2017 with the U.S.
Patent and Trademark Office, which claims priority under 35 USC
.sctn. 119 to Korean Patent Application No. 10-2016-0045909 filed
on Apr. 15, 2016 and Korean Patent Application No. 10-2016-0094385
filed on Jul. 25, 2016 with the Korean Intellectual Property
Office, the disclosures of which are incorporated herein in their
entirety by reference.
BACKGROUND
Technical field
[0002] Embodiments of the present disclosure relate to a substrate
processing system and a substrate processing method thereof. For
example, embodiments of the present disclosure relate to a cleaning
apparatus for removing particles on a substrate, a chemical
mechanical polishing system including the same, a cleaning method
after chemical mechanical polishing, and a method of manufacturing
a semiconductor device including the same.
Description of Related Art
[0003] A semiconductor device is manufactured by a plurality of
unit processes. The plurality of unit processes include a thin film
deposition process, a chemical mechanical polishing process, a
photolithography process, an etch process, an ion implantation
process and a cleaning process. The cleaning process is a unit
process for removing particles on a substrate. The particles may be
generated when performing the chemical mechanical polishing
process, and thus the cleaning process may be performed after the
chemical mechanical polishing process.
SUMMARY
[0004] Example embodiments of the inventive concepts may provide a
cleaning apparatus with an improved cleaning efficiency and a
cleaning method thereof after chemical mechanical polishing.
[0005] Example embodiments of the inventive concepts may provide a
cleaning apparatus capable of reducing contamination of a brush and
reverse contamination of a substrate caused by the contaminated
brush and a cleaning method thereof after chemical mechanical
polishing.
[0006] According to an example embodiment of the inventive
concepts, a cleaning apparatus includes a first cleaning unit
including a first dual nozzle configured to supply a first chemical
liquid and a first spray to a substrate, the first spray including
a first liquid for dissolving the first chemical liquid, and a
second cleaning unit including a second dual nozzle configured to
supply a second chemical liquid and a second spray to the
substrate, the second chemical liquid being different from the
first chemical liquid and the second spray including a second
liquid for dissolving the second chemical liquid, the second liquid
being the same as the first liquid.
[0007] According to an example embodiment of the inventive
concepts, a chemical mechanical polishing system includes a
substrate transfer apparatus configured to transfer a substrate, a
polishing apparatus including a pad configured to polish the
substrate, and a cleaning apparatus configured to clean the
substrate polished by the pad to remove particles generated in the
polishing apparatus. The cleaning apparatus includes a first
cleaning unit including a first dual nozzle configured to supply,
to the substrate, a first chemical liquid and a first spray
including a first liquid for dissolving the first chemical liquid,
and a second cleaning unit including a second dual nozzle
configured to supply, to the substrate, a second chemical liquid
different from the first chemical liquid and a second spray
including a second liquid for dissolving the second chemical
liquid, wherein the second liquid is the same as the first
liquid.
[0008] According to an example embodiment of the inventive
concepts, a cleaning method includes supplying, to a substrate, a
first chemical liquid and a first spray including a first liquid
dissolving the first chemical liquid, brushing a surface of the
substrate and supplying a second chemical liquid different from the
first chemical liquid onto the substrate, and supplying, to the
substrate, a third chemical liquid being the same as the second
chemical liquid and a second spray including a second liquid
dissolving the third chemical liquid and being the same as the
first liquid.
[0009] According to an example embodiment of the inventive
concepts, a method of manufacturing a semiconductor device includes
preparing a substrate, polishing the substrate, and cleaning the
substrate to remove particles on the substrate after polishing the
substrate. The cleaning of the substrate may include providing, to
the substrate, a first chemical liquid and a first spray including
a first liquid dissolving the first chemical liquid, brushing a
surface of the substrate, and providing a second chemical liquid
different from the first chemical liquid onto the substrate, and
providing, to the substrate, a third chemical liquid being the same
as the second chemical liquid and a second spray including a second
liquid dissolving the third chemical liquid and being the same as
the first liquid.
[0010] According to an example embodiment, a method of
manufacturing a semiconductor device includes steps of forming a
plurality of layers on a substrate, planarizing a surface of the
substrate by a chemical mechanical polishing process, and cleaning
the substrate with a cleaning apparatus, wherein the cleaning
apparatus comprises a first part including a first dual nozzle, the
first dual nozzle including a first spray nozzle and a first
droplet nozzle, and a second part including a second dual nozzle,
the second dual nozzle including a second spray nozzle and a second
droplet nozzle, wherein the first spray nozzle provides a first
liquid on the substrate while cleaning the substrate, wherein the
first droplet nozzle provides a second liquid on the substrate
while cleaning the substrate, wherein the second spray nozzle
provides a third liquid on the substrate while cleaning the
substrate, wherein the second droplet nozzle provides a fourth
liquid on the substrate while cleaning the substrate, wherein the
first liquid and second liquid are mixed to form a first solution
while cleaning the substrate, and wherein the third liquid and
fourth liquid are mixed to form a second solution while cleaning
the substrate.
[0011] According to an exemplary embodiment, a method of
manufacturing a semiconductor device includes steps of forming a
plurality of layers on a substrate, planarizing a surface of the
substrate by a chemical mechanical polishing process, providing a
first liquid on the substrate from a center portion to an edge
portion of the substrate, providing a second liquid on the
substrate from the center portion to the edge portion of the
substrate, providing a third liquid on the substrate from the
center portion to the edge portion of the substrate, and providing
a fourth liquid on the substrate from the center portion to the
edge portion of the substrate, wherein providing the second liquid
follows providing the first liquid, and the first and second
liquids are mixed together on the substrate to form a first
solution, wherein providing the fourth liquid follows providing the
third liquid, and the third and fourth liquids are mixed together
on the substrate to form a second solution, and wherein the second
liquid is an acidic solution, and the fourth liquid is an alkaline
solution.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 illustrates a chemical mechanical polishing system
according to example embodiments.
[0013] FIG. 2 is a plan view illustrating a cleaning apparatus of
FIG. 1 according to example embodiments.
[0014] FIG. 3 is a diagram illustrating a first cleaning unit of
FIG. 2 according to example embodiments.
[0015] FIGS. 4 and 5 respectively are a perspective view and a plan
view illustrating a movement direction of a first high-pressure
nozzle and a first low-pressure nozzle of FIG. 3 according to
example embodiments.
[0016] FIG. 6 is a diagram illustrating a first high-pressure
nozzle and a first low-pressure nozzle of FIG. 3 according to
example embodiments.
[0017] FIG. 7 is a graph illustrating a particle removal efficiency
of a first chemical liquid and a first spray depending on sizes of
particles shown in FIG. 6 according to example embodiments.
[0018] FIG. 8 is a perspective view illustrating a second cleaning
unit of FIG. 2 according to example embodiments.
[0019] FIG. 9 is a perspective view illustrating a third cleaning
unit of FIG. 2 according to example embodiments.
[0020] FIG. 10 is a perspective view illustrating a movement
direction of a second high-pressure nozzle and a second
low-pressure nozzle of FIG. 9 according to example embodiments.
[0021] FIG. 11 is a diagram illustrating a second high-pressure
nozzle and a second low-pressure nozzle of FIG. 9 according to
example embodiments.
[0022] FIG. 12 is a graph illustrating zeta potentials of a
substrate and particles depending on a pH value of a third chemical
liquid according to example embodiments.
[0023] FIG. 13 is a flow chart illustrating a method of
manufacturing a semiconductor device using a chemical mechanical
polishing system according to example embodiments.
[0024] FIG. 14 is a plan view illustrating a cleaning apparatus of
FIG. 1 according to example embodiments.
[0025] FIG. 15 is a graph illustrating a particle removal
efficiency depending on an impact force of a first spray and a
second spray of FIGS. 6 and 11 according to example
embodiments.
DETAILED DESCRIPTION
[0026] Hereinafter, example embodiments will be explained in detail
with reference to the accompanying drawings, in which various
embodiments are shown. The invention may, however, be embodied in
many different forms and should not be construed as limited to the
example embodiments set forth herein. These example embodiments are
just that--examples--and many implementations and variations are
possible that do not require the details provided herein. It should
also be emphasized that the disclosure provides details of
alternative examples, but such listing of alternatives is not
exhaustive. Furthermore, any consistency of detail between various
examples should not be interpreted as requiring such detail--it is
impracticable to list every possible variation for every feature
described herein. The language of the claims should be referenced
in determining the requirements of the invention.
[0027] In the drawings, like numbers refer to like elements
throughout. Though the different figures show various features of
exemplary embodiments, these figures and their features are not
necessarily intended to be mutually exclusive from each other.
Rather, certain features depicted and described in a particular
figure may also be implemented with embodiment(s) depicted in
different figure(s), even if such a combination is not separately
illustrated. Referencing such features/figures with different
embodiment labels (e.g. "first embodiment") should not be
interpreted as indicating certain features of one embodiment are
mutually exclusive of and are not intended to be used with another
embodiment.
[0028] Unless the context indicates otherwise, the terms first,
second, third, etc., are used as labels to distinguish one element,
component, region, layer or section from another element,
component, region, layer or section (that may or may not be
similar). Thus, a first element, component, region, layer or
section discussed below in one section of the specification (or
claim) may be referred to as a second element, component, region,
layer or section in another section of the specification (or
another claim).
[0029] As used herein, the singular forms "a", "an" and "the" are
intended to include the plural forms as well, unless the context
clearly indicates otherwise. With the exception of "consisting of"
and "essentially consisting of" it will be further understood that
all transition terms describing elements of a step, component,
device, etc., are open ended. Thus, unless otherwise specified
(e.g., with language such as "only," "without," etc.), the terms
"comprising," "including," "having," etc., may specify the presence
of stated features, regions, integers, steps, operations, elements,
and/or components, but do not preclude the presence or addition of
one or more other features, regions, integers, steps, operations,
elements, components, and/or groups thereof.
[0030] It will be understood that when an element is referred to as
being "connected," "coupled to" or "on" another element, it can be
directly connected/coupled to/on the other element or intervening
elements may be present. In contrast, when an element is referred
to as being "directly connected" or "directly coupled" to another
element, or as "contacting" or "in contact with" another element,
there are no intervening elements present. Spatially relative
terms, such as "beneath," "below," "lower," "above," "upper" and
the like, may be used herein for ease of description to describe
one element's or feature's positional relationship relative to
another element(s) or feature(s) as illustrated in the figures. It
will be understood that such spatially relative terms are intended
to encompass different orientations of the device in use or
operation in addition to the orientation depicted in the figures.
Thus, a device depicted and/or described herein to have element A
below element B, is still deemed to have element A below element B
no matter the orientation of the device in the real world.
[0031] Embodiments may be illustrated herein with idealized views
(although relative sizes may be exaggerated for clarity). It will
be appreciated that actual implementation may vary from these
exemplary views depending on manufacturing technologies and/or
tolerances. Therefore, descriptions of certain features using terms
such as "same," "equal," and geometric descriptions such as
"planar," "coplanar," "cylindrical," "square," etc., as used herein
when referring to orientation, layout, location, shapes, sizes,
amounts, or other measures, do not necessarily mean an exactly
identical orientation, layout, location, shape, size, amount, or
other measure, but are intended to encompass nearly identical
orientation, layout, location, shapes, sizes, amounts, or other
measures within acceptable variations that may occur, for example,
due to manufacturing processes. The term "substantially" may be
used herein to emphasize this meaning, unless the context or other
statements indicate otherwise.
[0032] Terms such as "about" or "approximately" may reflect
amounts, sizes, orientations, or layouts that vary only in a small
relative manner, and/or in a way that does not significantly alter
the operation, functionality, or structure of certain elements. For
example, a range from "about 0.1 to about 1" may encompass a range
such as a 0%-5% deviation around 0.1 and a 0% to 5% deviation
around 1, especially if such deviation maintains the same effect as
the listed range.
[0033] Unless otherwise defined, all terms (including technical and
scientific terms) used herein have the same meaning as commonly
understood by one of ordinary skill consistent with their meaning
in the context of the relevant art and/or the present
application.
[0034] FIG. 1 illustrates a chemical mechanical polishing system
100 according to example embodiments.
[0035] Referring to FIG. 1, a chemical mechanical polishing (CMP)
system 100 may include a carrier loading apparatus 10, a substrate
transfer apparatus 20, a polishing apparatus 30, a cleaning
apparatus 40 and a drying apparatus 50. The carrier loading
apparatus 10 may receive carriers 12. The substrate transfer
apparatus 20 may transfer a substrate W accommodated in each of the
carriers 12 to the polishing apparatus 30, the cleaning apparatus
40 and the drying apparatus 50. The substrate transfer apparatus 20
may include a robot arm moving along a guide rail 22. The guide
rail 22 may be disposed between the polishing apparatus 30 and the
cleaning apparatus 40. The polishing apparatus 30 may include a
plurality of polishing pads 32. Each polishing pad 32 may be
configured to polish the substrate W. The cleaning apparatus 40 may
clean the polished substrate W. The drying apparatus 50 may dry the
cleaned substrate W. The dried substrate W may be unloaded into the
carriers 12 by the substrate transfer apparatus 20.
[0036] FIG. 2 is a plan view illustrating the cleaning apparatus 40
of FIG. 1 according to example embodiments.
[0037] Referring to FIGS. 1 and 2, the cleaning apparatus 40 may be
a deionized-water-based cleaning apparatus. As an example, the
cleaning apparatus 40 may include a first cleaning unit 60, a
second cleaning unit 70 and a third cleaning unit 80. The first
through third units 60, 70 and 80 may sequentially remove particles
11 (refer to FIG. 6) on the substrate W.
[0038] FIG. 3 is a diagram illustrating the first cleaning unit 60
of FIG. 2 according to example embodiments.
[0039] Referring to FIG. 3, the first cleaning unit 60 may clean
the substrate W with a first chemical liquid 61 and a first spray
68. As an example, the first cleaning unit 60 may include a first
chuck 62, a first shaft 63, a first arm 64 and a first dual nozzle
(or a first double nozzle) 66.
[0040] The first chuck 62 may clamp the substrate W. The first
chuck 62 may be configured to rotate the substrate W. For example,
the first chuck 62 may rotate the substrate W at a speed of about
60 rpm to about 1000 rpm.
[0041] The first chuck 62 may be disposed adjacent to the first
shaft 63. The first arm 64 may be connected to the first shaft 63.
The first shaft 63 may rotate the first arm 64 to move the first
dual nozzle 66 from the center of the substrate W toward a
periphery thereof. For example, the first dual nozzle 66 may move
from about the center of the substrate W to the periphery of the
substrate W while cleaning the substrate W. The first dual nozzle
66 may include two holes respectively configured to provide two
different materials from each other.
[0042] The first arm 64 may connect the first dual nozzle 66 to the
first shaft 63. The first arm 64 may move the first dual nozzle 66
above the substrate W by rotation of the first shaft 63.
[0043] The first dual nozzle 66 may supply the first chemical
liquid 61 and the first spray 68 to the substrate W. As an example,
the first dual nozzle 66 may include a first high-pressure nozzle
65 and a first low-pressure nozzle 67. For example, the first
chemical liquid 61 may be supplied by one nozzle of the first dual
nozzle 66, and the first spray 68 may be supplied by another nozzle
of the first dual nozzle 66. For example, the first dual nozzle 66
may include two nozzles connected with each other.
[0044] The first high-pressure nozzle 65 may be connected to the
first arm 64. The first high-pressure nozzle 65 may be a jet spray
nozzle or a two-fluid nozzle. For example, the first high-pressure
nozzle 65 may be connected to two different pipes, which supply two
different fluids to the first high-pressure nozzle 65 respectively.
The first high-pressure nozzle 65 may supply the first spray 68 to
the substrate W. The first spray 68 may include a first liquid 68a
and a first transport gas 68b. The first liquid 68a may include
de-ionized water, carbonated water, or isopropyl alcohol (IPA). The
transport gas 68b may form (or convert) the first liquid 68a into
in the first spray 68. The first transport gas 68b may include, for
example, nitrogen gas or an inert gas. The first transport gas 68b
may be supplied at a flow rate of about 50-300 liters per minute
(lpm). The first spray 68 and the first transport gas 68b may be
supplied to the substrate W at a pressure of about 2 atm to about
10 atm. For example, the first liquid 68a and the first transport
gas 68b may be supplied to the first high-pressure nozzle 65 at a
pressure of about 2 atm to about 10 atm.
[0045] The first low-pressure nozzle 67 may be connected to the
first high-pressure nozzle 65. For example, the low-pressure nozzle
67 may be spaced a distance of about 5 cm from the first
high-pressure nozzle 65. In some example embodiments, the first
low-pressure nozzle 67 may be connected to the first arm 64 and the
first high-pressure nozzle 65 may be connected to the first
low-pressure nozzle 67.
[0046] The first low-pressure nozzle 67 may supply the first
chemical liquid 61 to the substrate W. A pressure of the first
chemical liquid 61 may be lower than that of the first spray 68.
The first chemical liquid 61 may have a flow rate of about 50-800
cubic centimeters per minute (cpm), and a pressure of about 1 atm
or an atmospheric pressure. For example, the pressure of the first
chemical liquid 61 in the first low-pressure nozzle 67 may be
between 0.8-1.2 atm. The first chemical liquid 61 may include an
acidic solution. For example, the first chemical liquid 61 may
include hydrofluoric acid (HF). The hydrofluoric acid may have a
weight percentage of 0.01 wt % to 2 wt % of the first chemical
liquid 61 (e.g., it may include HF having a weight percentage of
0.01 wt % to 2 wt % with respect to the first chemical liquid 61).
The first chemical liquid 61 may be dissolved in the first liquid
68a. For example, the first chemical liquid 61 may be combined with
the first liquid 68a on the substrate W to form a mixed, dissolved
solution including the first chemical liquid 61 dissolved into the
first liquid 68a that forms the first spray 68. For example, the
mixed solution where the first chemical liquid 61 is dissolved into
the first liquid 68a that forms the first spray 68 may be a
homogeneously mixed liquid.
[0047] FIGS. 4 and 5 respectively are a perspective view and a plan
view illustrating a movement direction of the first high-pressure
nozzle 65 and a first low-pressure nozzle 67 of FIG. 3 according to
example embodiments.
[0048] Referring to FIGS. 4 and 5, the first low-pressure nozzle 67
may be connected to the first high-pressure nozzle 65 and spaced
apart from the first high-pressure nozzle 65 in a first direction
69a. The first low-pressure nozzle 67 and the first high-pressure
nozzle 65 may be moved in a second direction 69b opposite to the
first direction 69a by the first arm 64. In certain embodiments,
the second direction 69b may not be directly opposite to the first
direction 69a.
[0049] The first chemical liquid 61 and the first spray 68 may be
supplied from the center of the substrate W toward the periphery
thereof in the second direction 69b. For example, the first
chemical liquid 61 and the first spray 68 may be provided from
about the center of the substrate W to the periphery of the
substrate W in the second direction 69b while cleaning the
substrate W. The first chemical liquid 61 and the first spray 68
may be progressively scattered along the second direction 69b. The
second direction 69b may be a direction in which the first spray 68
proceeds ahead of the first chemical liquid 61 while the first dual
nozzle 66 moves in the second direction 69b. In some embodiments,
the second direction 69b may be a circular movement direction
because the first spray 68 rotates with respect to the first shaft
63. In other embodiments, the second direction may be a tangential
direction of a tracking path of movement of the first dual nozzle
66.
[0050] FIG. 6 is a diagram illustrating the first high-pressure
nozzle 65 and the first low-pressure nozzle 67 of FIG. 3 according
to example embodiments.
[0051] Referring to FIG. 6, the first high-pressure nozzle 65 and
the first low-pressure nozzle 67 may be disposed to be vertically
spaced by a first height h1 from a top surface of the substrate W.
For example, the first height h1 may be about 5 cm. For example,
the first height h1 may be 3-7 cm. The first low-pressure nozzle 67
may be positioned higher than the first high-pressure nozzle 65,
e.g., by less than 100 mm.
[0052] The first spray 68 may separate some of particles 11 from
the substrate W at a high pressure. In some embodiments, the first
spray 68 may wet a portion of a top surface of the substrate W. The
first chemical liquid 61 may be dissolved by the first spray 68.
For example, the first chemical liquid 61 may be combined with the
first liquid 68a on the substrate W to form a mixed, dissolved
solution including the first chemical liquid 61 dissolved into the
first liquid 68a that forms the first spray 68. For example, the
mixed solution where the first chemical liquid 61 is dissolved into
the first liquid 68a that forms the first spray 68 may be a
homogeneously mixed liquid. The first spray 68 may apply a physical
force to the first chemical liquid 61 to increase a cleaning power
together with the first chemical liquid 61.
[0053] The first chemical liquid 61 may be dropped on the substrate
W. The first low-pressure nozzle 67 may be a droplet nozzle. In
some embodiments, the first chemical liquid 61 may drop on the
substrate W by gravity without substantial pressure from the first
low-pressure nozzle 67. The first chemical liquid 61 may detach
some of the particles 11 from a top surface of an upper portion of
the substrate W, for example, by etching the top surface thereof.
For example, the upper portion of the substrate W may be formed of
a silicon oxide layer. The particles 11 may be generated in the
polishing apparatus 30 when chemically mechanically polishing the
substrate W. The particles 11 include abrasive particles, silicon
oxide particles or metal particles. The first chemical liquid 61
and some of the detached particles 11 may be removed from the
substrate W by rotation of the first chuck 62 of FIG. 3. For
example, the particles 11 and the first chemical liquid 61 may be
removed by a centrifugal force produced by the rotation of the
first chuck 62.
[0054] FIG. 7 is a graph illustrating a particle removal efficiency
of the first chemical liquid 61 and the first spray 68 depending on
sizes of particles 11 shown in FIG. 6 according to example
embodiments.
[0055] Referring to FIG. 7, data 92 shows a particle removal
efficiency of the first spray 68 and the first chemical liquid 61
when the first dual nozzle 66 moves in the second direction 69b.
Data 94 shows a particle removal efficiency of the first spray 68
and the first chemical liquid 61 when the first dual nozzle 66
moves in the first direction 69a. Data 96 shows a particle removal
efficiency of the first spray 68 without providing the first
chemical liquid 61. Data 98 shows a particle removal efficiency of
the first chemical liquid 61 without providing the first spray 68.
When the first spray 68 moves ahead of the first chemical liquid 61
in the second direction 69b, the particle removal efficiency may be
greatest. Accordingly, a cleaning efficiency of the particles 11
may be improved when a process is performed as described in
relation to data 92 in FIG. 7.
[0056] For example, the particle removal efficiency 92 of the first
spray 68 and the first chemical liquid 61 when the nozzle 66 moves
in the second direction 69b is up to about 92%. The particle
removal efficiency 92 increases from about 70% to about 92% when
the size of the particles 11 increases from about 45 nm to about
100 nm in diameter or length. The particle removal efficiency 92 is
constant at about 92% with respect to the size of the particles 11
ranging from about 100 nm to about 200 nm in diameter or length. A
size of a particle 11 may be measured with its diameter when the
particle 11 has a circular shape or a ball shape. A size of a
particle 11 maybe measured with its length when the particle 11 has
a non-circular or non-ball shape. Most of the particles 11 may be
removed. Therefore, the first spray 68 and the first chemical
liquid 61 remove the particles 11. For example, the first spray 68
and the first chemical liquid 61 may mainly remove metal particles.
For example, the first spray 68 and the first chemical liquid 61
may mainly remove large sized metal particles.
[0057] The particle removal efficiency 94 of the first spray 68 and
the first chemical liquid 61 when the nozzle 66 moves in the first
direction 69a is up to about 85%. The particle removal efficiency
94 is constant at about 85% with respect to particles 11 having
sizes of about 45 nm to about 200 nm in diameter or length. The
first direction 69a is a direction in which the first chemical
liquid 61 proceeds ahead of the first spray 68 while the first dual
nozzle 66 moves in the first direction 69b. Although not shown,
when the first chemical liquid 61 is supplied to the substrate W
ahead of the first spray 68, the first chemical liquid 61 may be
splattered on the substrate W by the first spray 68. Therefore,
cleaning efficiency of the particles 11 may get low. In some
examples, when the first spray 68 reaches the periphery (or an
edge) of the substrate W, the first chemical liquid 61 may drip
outside the substrate W. Thus, the first chemical liquid 61 may be
wasted.
[0058] The particle removal efficiency 96 of the first spray 68
without providing the first chemical liquid 61 is up to about 64%.
The first spray 68 may remove the particles 11 more effectively
than the first chemical liquid 61. The particle removal efficiency
96 of the first spray 68 gradually increases from about 20% to
about 64% when the size of the particles 11 increases from about 50
nm to about 125 nm in diameter or length. The particle removal
efficiency 96 of the first spray 68 decreases from about 60% to
about 50% when the size of the particles 11 increases from about
125 nm to about 200 nm in diameter or length.
[0059] The particle removal efficiency 98 of the first chemical
liquid 61 without providing the first spray 68 is up to about 44%.
When the size of the particles 11 increases from about 45 nm to
about 200 nm in diameter or length, the particle removal efficiency
98 of the first chemical liquid 61 decreases from about 44% to
about 20%.
[0060] Although not shown, when the first high-pressure nozzle 65
moves in the first direction 69a, the first low-pressure nozzle 67
may proceed ahead of the first high-pressure nozzle 65. For
example, the first low-pressure nozzle 67 may move ahead of a
movement area of the first high-pressure nozzle 65. In some
embodiments, after the first chemical liquid 61 is supplied to a
bowl (not shown) outside the substrate W, the first chemical liquid
61 may be supplied to the substrate W. However, in such a case,
cleaning failure of the substrate W may occur due to the first
chemical liquid 61. For example, the first chemical liquid 61 may
be supplied to the substrate W with supplying the first spray 68 to
the substrate W because of an interval between the first
high-pressure and low-pressure nozzles 65 and 67 when nozzle 66
moves to the first direction 69a. Furthermore, when the first spray
68 is not supplied to the periphery of the substrate W, a cleaning
power at the periphery of the substrate W may be reduced such that
the cleaning failure may be generated.
[0061] For example, when a cleaning process starts, the first
low-pressure nozzle 67 may be located closer to the center of the
substrate W compared to the first high-pressure nozzle 65. However,
when the first low-pressure nozzle 67 is located on the periphery
of the substrate W, the first high-pressure nozzle 65 may be
located closer to the center of the substrate W compared to the
first low-pressure nozzle 67, and the first chemical liquid 61 may
drop from the first low-pressure nozzle 67 to outside of the
substrate W. The dropped first chemical liquid 61 may be gathered
in a bowl. The first chemical liquid 61 spattering from and/or
gathered in the bowl may be re-supplied to the substrate W. Because
reverse contamination may be generated by the re-supplied first
chemical liquid 61, a supply of the first spray 68 from the first
high-pressure nozzle 65 may stop before the first spray 68 reaches
to an edge of the substrate W (e.g., in a middle of the substrate)
to prevent such reverse contamination, and thus the cleaning power
on the periphery of the substrate W may be reduced. Accordingly, a
cleaning failure may occur.
[0062] FIG. 8 is a perspective view illustrating the second
cleaning unit 70 of FIG. 2 according to example embodiments.
[0063] Referring to FIGS. 2 and 8, the second cleaning unit 70 may
include a plurality of rollers 72, a plurality of brushes 74 and a
single nozzle 76. For example, the single nozzle 76 may not be
connected to any other nozzle near the single nozzle (e.g., in a
nozzle shaft or in a nozzle arm.)
[0064] The plurality of rollers 72 may be disposed and configured
to hold or support the periphery (or the edge) of the substrate W.
For example, four rollers 72 may be arranged at regular intervals
at the periphery of the substrate W. The rollers 72 may be
configured to rotate the substrate W.
[0065] The plurality of brushes 74 may separate the particles 11
from the substrate W. For example, the brushes 74 may include a
lower brush 73 and an upper brush 75. The substrate W may be
disposed between the lower brush 73 and the upper brush 75. The
lower brush 73 may be disposed under the substrate W. The upper
brush 75 may be disposed above the substrate W. The lower brush 73
and the upper brush 75 may respectively rotate in a direction
opposite to each other. The upper brush 75 may remove some of the
particles 11 on the substrate W. Therefore, the upper brush 75
removes the particles 11. For example, the upper brush 75 may
mainly remove the abrasive particles.
[0066] The single nozzle 76 may supply a second chemical liquid 71
to the substrate W. For example, the second chemical liquid 71 may
include an alkaline solution such as an ammonia water. The ammonia
water may have a weight percentage of 0.01 wt % to 4 wt % with
respect to the second chemical liquid 71 (e.g., the ammonia water
may have ammonia (NH.sub.4OH) in the ammonia water with a weight
percentage of 0.01 wt % to 4 wt % of the ammonia water). The second
chemical liquid 71 may prevent the particles 11 from adhering to
the substrate W. For example, the second chemical liquid 71 may be
helpful keeping particles 11 detached from the substrate W from
being reattached to the substrate W. The single nozzle 76 may be
disposed to precede the brushes 74, e.g., with respect to the
substrate W.
[0067] Referring again to FIGS. 6 and 8, the particles 11 that are
not removed by the first cleaning unit 60 may contaminate the
brushes 74. The first spray 68 and the first chemical liquid 61
supplied from the first dual nozzle 66 of the first cleaning unit
60 may reduce contamination of the brushes 74. For example, as the
size of the particles 11 that are not removed by the first cleaning
unit 60, may increase the contamination of the brushes 74. In a
following cleaning process of the second cleaning unit 70, the
contaminated brushes 74 may contaminate another substrate W. The
contamination of the substrate W by the contaminated brushes 74 may
be called reverse contamination of the substrate W. According to
example embodiments, the first spray 68 and the first chemical
liquid 61 supplied from the first dual nozzle 66 of the first
cleaning unit 60 may remove most of the particles 11 on the
substrate W such that the contamination of the brushes 74 and the
reverse contamination of the substrate W may be reduced.
[0068] FIG. 9 is a perspective view illustrating the third cleaning
unit 80 of FIG. 2 according to example embodiments.
[0069] Referring to FIG. 9, the third cleaning unit 80 may clean
the substrate W using a third chemical liquid 81 and a second spray
88. As an example, the third cleaning unit 80 may include a second
chuck 82, a second shaft 83, a second arm 84 and a second dual
nozzle 86.
[0070] The second chuck 82 may clamp the substrate W. The second
chuck 82 may be configured to rotate the substrate W. For example,
the second chuck 82 may rotate the substrate W at about 60 rpm to
about 1000 rpm.
[0071] The second shaft 83 may be disposed adjacent to the second
chuck 82. The second arm 84 may be connected to the second shaft
83. The second shaft 83 may rotate the second arm 84 to move the
second dual nozzle 86 from the center of the substrate W toward the
periphery thereof. For example, the second dual nozzle 86 may move
from about the center of the substrate W to the periphery of the
substrate W while cleaning the substrate W.
[0072] The second arm 84 may connect the second shaft 83 to the
second dual nozzle 86. For example, one end of the second arm 84
may be connected to the second shaft 83 and the other end of the
second arm 84 may be connected to the second dual nozzle 86. The
second arm 84 may move the second dual nozzle 86 above the
substrate W by a rotation of the second shaft 83.
[0073] The second dual nozzle 86 may supply the third chemical
liquid 81 and the second spray 88 to the substrate W. For example,
the second dual nozzle 86 may be vertically spaced apart from a top
surface of the substrate W by a height of about 5 cm, e.g., 3-7 cm.
For example, the second dual nozzle 86 may include two different
nozzles configured to supply two different materials respectively.
For example, the third chemical liquid 81 may be supplied by one
nozzle of the second dual nozzle 86, and the second spray 88 may be
supplied by another nozzle of the second dual nozzle 86. For
example, the second dual nozzle 86 may include two nozzles
connected to each other.
[0074] In some embodiments, the second dual nozzle 86 may include a
second high-pressure nozzle 85 and a second low-pressure nozzle
87.
[0075] The second high-pressure nozzle 85 may be connected to the
second arm 84. The second high-pressure nozzle 85 may be a jet
spray nozzle or a two-fluid nozzle. For example, the second
high-pressure nozzle 85 may be connected to two different pipes
which respectively supply two different fluids to the nozzle 85.
The second high-pressure nozzle 85 may supply the second spray 88
to the substrate W. The second spray 88 may have the same pressure
as the first spray 68. For example, the second spray 88 may have a
pressure of about 2 atm to about 10 atm. The second spray 88 may
include a second liquid 88a and a second transport gas 88b. The
second liquid 88a may be the same as the first liquid 68a. The
second liquid 88a may include, for example, a deionized water, a
carbonated water or isopropyl alcohol. The second transport gas 88b
may be the same as the first transport gas 68b. The second
transport gas 88b may include nitrogen gas or an inert gas. The
second transport gas 88b may be supplied at a flow rate of about
50-300 liters per minute (lpm). The second spray 88 and the second
transport gas 88b may be supplied to the substrate W at a pressure
of about 2 atm to about 10 atm. For example, the second liquid 88a
and the second transport gas 88b may be supplied to the second
high-pressure nozzle 85 at a pressure of about 2 atm to about 10
atm.
[0076] The second low-pressure nozzle 87 may be connected to the
second high-pressure nozzle 85. For example, the second
low-pressure nozzle 87 may be spaced a distance of about 5 cm
(e.g., 3-7 cm) from the second high-pressure nozzle 85. The second
low-pressure nozzle 87 may supply the third chemical liquid 81 to
the substrate W. A pressure of the third chemical liquid 81 may be
lower than that of the second spray 88. The third chemical liquid
81 may include alkaline solution. The third chemical liquid 81 may
include an ammonia water. A flow rate and the pressure of the third
chemical liquid 81 may be the same as the flow rate and the
pressure of the first chemical liquid 61. For example, the third
chemical liquid 81 may have a flow rate of about 50-800 cubic
centimeters per minute (cpm) and about an atmospheric pressure
(e.g., 0.8-1.2 atm). For example, the pressure of the third
chemical liquid 81 in the second low-pressure nozzle 87 may be
between 0.8 atm and 1.2 atm. The third chemical liquid 81 may be
dissolved in the second liquid 88a. For example, the third chemical
liquid 81 may be combined with the second liquid 88a on the
substrate W to form a mixed, dissolved solution including the third
chemical liquid 81 dissolved into the second liquid 88a that forms
the second spray 88. For example, the mixed solution where the
third chemical liquid 81 is dissolved into the second liquid 88a
that forms the second spray 88 may be a homogeneously mixed liquid.
In some embodiments, the second low-pressure nozzle 87 may be
connected to the second arm 84, and the second high-pressure nozzle
85 may be connected to the second low-pressure nozzle 87.
[0077] FIG. 10 is a perspective view illustrating a movement
direction of the second high-pressure nozzle 85 and the second
low-pressure nozzle 87 of FIG. 9 according to example
embodiments.
[0078] Referring to FIGS. 4 and 10, the second low-pressure nozzle
87 may be connected to the second high-pressure nozzle 85, and
spaced apart from the second high-pressure nozzle 85 in a third
direction 89a. The third direction 89a may be equal to the first
direction 69a. The second low-pressure nozzle 87 and the second
high-pressure nozzle 85 may move in a fourth direction 89b by the
second arm 84. The fourth direction 89b may be equal to the second
direction 69b and may be opposite to the third direction 89a. In
certain embodiments, the fourth direction 89b may not be directly
opposite to the third direction 89a.
[0079] The third chemical liquid 81 and the second spray 88 may be
supplied along the fourth direction 89b from the center of the
substrate W toward the periphery thereof. For example, the third
chemical liquid 81 and the second spray 88 may be provided from
about the center of the substrate W to the periphery of the
substrate W in the fourth direction 89b while cleaning the
substrate W. The third chemical liquid 81 and the second spray 88
may be progressively scattered (or sprayed) along the fourth
direction 89b. The fourth direction 89b may be a direction in which
the second spray 88 proceeds ahead of the third chemical liquid 81
while the second dual nozzle 86 moves in the fourth direction 89b.
In some embodiments, the fourth direction 89b may be a circular
movement direction because the second spray 88 rotates with respect
to the second shaft 83. In other embodiments, the fourth direction
89b may be a tangential direction of a tracking path of movement of
the second dual nozzle 86.
[0080] FIG. 11 is a diagram illustrating the second high-pressure
nozzle 85 and the second low-pressure nozzle 87 of FIG. 9 according
to example embodiments.
[0081] Referring to FIG. 11, the second high-pressure nozzle 85 and
the second low-pressure nozzle 87 may be disposed to be vertically
spaced apart from a top surface of the substrate W by a second
height h2. The second height h2 may be about 5 cm, e.g., 3-7 cm.
The second low-pressure nozzle 87 may be positioned higher than the
second high-pressure nozzle 85 by less than 100 mm.
[0082] The second spray 88 may separate some of the particles 11
from the substrate W at a high pressure. The third chemical liquid
81 may be dissolved by the second spray 88. For example, the third
chemical liquid 81 may be combined with the second liquid 88a on
the substrate W to form a mixed, dissolved solution including the
third chemical liquid 81 dissolved into the second liquid 88a that
forms the second spray 88. For example, the mixed solution where
the third chemical liquid 81 is dissolved into the second liquid
88a that forms the second spray 88 may be a homogeneously mixed
liquid.
[0083] The third chemical liquid 81 may be dropped on the substrate
W. The second low-pressure nozzle 87 may be a droplet nozzle. In
some embodiments, the third chemical liquid 81 may drop on the
substrate W by gravity without substantial pressure from the first
low-pressure nozzle 67. The third chemical liquid 81 may prevent
the particles 11 from adhering to the substrate W, for example,
using an electrostatic repulsive force. Therefore, the second spray
88 removes the particles 11. For example, the second spray 88 may
mainly remove silicon oxide particles.
[0084] Referring again to FIG. 10, the particles 11 may be removed
from the substrate W by a chemical cleaning force of the third
chemical liquid 81, a physical force of the second spray 88 and a
centrifugal force produced by rotation of the substrate W. The
third chemical liquid 81 and some of the particles 11 may be
removed from the substrate W by the centrifugal force.
[0085] FIG. 12 is a graph illustrating zeta potentials of a
substrate and particles depending on a pH value of the third
chemical liquid 81 of FIG. 11 according to example embodiments.
[0086] Referring to FIG. 12, electrostatic repulsive forces of the
substrate W and the particles 11 respectively increase when a
magnitude of absolute values of zeta potentials of the substrate W
and the particles 11 increases. For example, when a pH value of
third chemical liquid 81 increases, a zeta potential 102 of the
substrate W and a zeta potential 104 of the particles 11 may have
the same electric polarity, and an absolute value of zeta potential
increases. When the zeta potential of the same electric polarity
increases, the electrical repulsive force may increase. An
increasing difference between the zeta potential 102 of the
substrate W and the zeta potential 104 of the particles 11 is not
big, and may be ignored. The particles 11 may be separated from the
substrate W to drift in the third chemical liquid 81. A buoyancy of
the particles 11 in the third chemical liquid 81 may be
proportional to the electrostatic repulsive forces between the
substrate W and the particles 11. Since the third chemical liquid
81 includes a strong alkaline solution such as an ammonia water,
the particles 11 may be prevented from adhering to the substrate W.
Therefore, the contamination caused by the particles 11 may be
prevented or reduced.
[0087] A method of manufacturing a semiconductor device using the
chemical mechanical polishing system 100 according to example
embodiments as described above will be described below.
[0088] FIG. 13 is a flow chart illustrating a method of
manufacturing a semiconductor device using the chemical mechanical
polishing system 100 according to example embodiments.
[0089] Referring FIG. 13, a method of manufacturing a semiconductor
device according to example embodiments may include preparing a
substrate W (S10), polishing the substrate W (S20), cleaning the
substrate W (S30) and drying the substrate W (S40).
[0090] In operation S10, the substrate W may be prepared to have a
plurality of layers for forming a semiconductor device through a
plurality of unit processes. The semiconductor device may include a
memory device, a solid state driver, or a logic application
processor. The semiconductor device may include an active element
such as a transistor or a diode, or a passive element such as a
capacitor or a resistor. The plurality of layers may include an
insulating layer or a conductive layer.
[0091] Referring to FIGS. 1 and 13, in operation S20, the substrate
W may be chemically mechanically polished in the polishing
apparatus 30. The substrate W may be polished to be planar by the
polishing apparatus 30. Although not shown, a polishing target
layer of the substrate W may include an interlayer insulating layer
such as a silicon oxide layer. In some embodiments, a polishing
target layer of the substrate W may include a metal layer such as a
copper layer.
[0092] Referring to FIGS. 2, 3 and 13, in operation S30, the
substrate W may be cleaned by a wet cleaning in the cleaning
apparatus 40 after chemical mechanical polishing is performed. In
some embodiments, the cleaning of the substrate W in operation S30
may include supplying the first spray 68 and the first chemical
liquid 61 to the substrate W (S32), supplying the second chemical
liquid 71 to the substrate W and brushing the substrate W (S34),
and supplying the second spray 88 and the third chemical liquid 81
to the substrate W (S36).
[0093] Referring to FIGS. 3 through 6 and 13, in operation S32, the
first spray 68 and the first chemical liquid 61 may be supplied to
the substrate W from the first dual nozzle 66 of the first cleaning
unit 60. The first chemical liquid 61 may be supplied at a lower
pressure than the pressure of the first spray 68. The first spray
68 may be supplied at a pressure of 2 atm to 10 atm. The first
spray 68 may be supplied to the substrate W ahead of the first
chemical liquid 61. The first chemical liquid 61 may be supplied at
about 1 atmosphere (e.g., 0.8-1.2 atm). The first spray 68 may be
supplied ahead of the first chemical liquid 61 in the second
direction 69b from the center of the substrate W toward the
periphery of the substrate W. For example, the first chemical
liquid 61 and the first spray 68 may be provided from about the
center of the substrate W to the periphery of the substrate W in
the second direction 69b while cleaning the substrate W. The first
spray 68 and the first chemical liquid 61 may separate some of the
particles 11 from the substrate W. The first chemical liquid 61 and
at least some of the separated particles 11 may be removed by a
centrifugal force produced by a rotation of the substrate W.
[0094] Referring to FIGS. 8 and 13, in operation 34, the substrate
W may be provided between the brushes 74 of the second cleaning
unit 70, and the third chemical liquid 71 may be supplied to the
substrate W from the single nozzle 76 of the second cleaning unit
80. The brushes 74 may separate some of the particles 11 from the
substrate W, and the second chemical liquid 71 may prevent at least
some of the separated particles 11 from re-adhering to the
substrate W.
[0095] Referring to FIGS, 9 through 11 and 13, in operation S36,
the second spray 88 and the third chemical liquid 81 may be
supplied from the second dual nozzle 86 of the third cleaning unit
80. The second spray 88 may be supplied ahead of the third chemical
liquid 81 in the fourth direction 89b from the center of the
substrate W toward the periphery of the substrate W. For example,
the third chemical liquid 81 and the second spray 88 may be
provided from about the center of the substrate W to the periphery
of the substrate W in the fourth direction 89b while cleaning the
substrate W. The second spray 88 may remove some of the particles
11 from the substrate W, and the third chemical liquid 81 may
prevent at least some of the separated particles 11 from
re-adhering to the substrate W by an electrostatic repulsive force.
The third chemical liquid 81 and at least some of the separated
particles 11 may be removed by a centrifugal force produced by a
rotation of the substrate W.
[0096] Referring again to FIGS. 1 and 13, in operation S40, the
substrate W may be dried by removing moisture from the substrate W
in the drying apparatus 50.
[0097] FIG. 14 is a plan view illustrating a cleaning apparatus of
FIG. 1 according to example embodiments.
[0098] Referring to FIGS. 6, 11 and 14, a cleaning apparatus 40a
may include the first cleaning unit 60 and the third cleaning unit
80. In the case where a pressure of the first spray 68 of the first
cleaning unit 60 and a pressure of the second spray 88 of the third
cleaning unit further increase, the second cleaning unit 70 of FIG.
2 may be omitted. The pressures of the first and second sprays 68
and 88 may be proportional to an impact force of the first and
second sprays 68 and 88 on the substrate W. Although the impact
force increases, patterns of the substrate W may not collapse
and/or be damaged since the substrate W is planarized by the
chemical mechanical polishing process.
[0099] FIG. 15 is a graph illustrating a dependency of a particle
removal efficiency on the impact force of the first spray 68 and
the second spray 88 of FIGS. 6 and 11 according to example
embodiments.
[0100] Referring to FIG. 15, when the impact force of the first
spray 68 and the second spray 88 increases, a particle removal
efficiency increases. For example, when the impact force of the
first and second sprays 68 and 88 increases from 60 gF to 80 gF,
the particle removal efficiency increases from 77% to 90%.
[0101] Therefore, in the case where the impact force of the first
and second sprays 68 and 88 increases to more than 80 gF, the
cleaning apparatus 40a may have a particle removal efficiency of
100% without the second cleaning unit 70 of FIG. 2. Further, the
cleaning apparatus 40a may prevent reverse contamination of the
substrate W caused by contamination of the brushes 74.
[0102] The above disclosure should be considered illustrative, and
not restrictive, and the appended claims are intended to cover
modifications, enhancements, and other embodiments, which fall
within the scope of the inventive concepts. Thus, the scope is to
be determined by the broadest permissible interpretation of the
following claims and their equivalents, and shall not be restricted
or limited by the foregoing detailed description.
* * * * *