U.S. patent application number 16/025332 was filed with the patent office on 2018-10-25 for systems and methods for forming apertures in microfeature workpieces.
The applicant listed for this patent is Micron Technology, Inc.. Invention is credited to William M. Hiatt, Charles M. Watkins.
Application Number | 20180304411 16/025332 |
Document ID | / |
Family ID | 35238636 |
Filed Date | 2018-10-25 |
United States Patent
Application |
20180304411 |
Kind Code |
A1 |
Watkins; Charles M. ; et
al. |
October 25, 2018 |
SYSTEMS AND METHODS FOR FORMING APERTURES IN MICROFEATURE
WORKPIECES
Abstract
Systems and methods for forming apertures in microfeature
workpieces are disclosed herein. In one embodiment, a method
includes directing a laser beam toward a microfeature workpiece to
form an aperture and sensing the laser beam pass through the
microfeature workpiece in real time. The method can further include
determining a number of pulses of the laser beam and/or an elapsed
time to form the aperture and controlling the laser beam based on
the determined number of pulses and/or the determined elapsed time
to form a second aperture in the microfeature workpiece.
Inventors: |
Watkins; Charles M.; (Eagle,
ID) ; Hiatt; William M.; (Eagle, ID) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Micron Technology, Inc. |
Boise |
ID |
US |
|
|
Family ID: |
35238636 |
Appl. No.: |
16/025332 |
Filed: |
July 2, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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15276627 |
Sep 26, 2016 |
10010977 |
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16025332 |
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14242390 |
Apr 1, 2014 |
9452492 |
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15276627 |
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14029105 |
Sep 17, 2013 |
8686313 |
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14242390 |
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11413289 |
Apr 28, 2006 |
8536485 |
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14029105 |
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10839457 |
May 5, 2004 |
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11413289 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/76898 20130101;
H05K 2203/163 20130101; B23K 2103/50 20180801; B23K 2103/56
20180801; B23K 26/40 20130101; B23K 26/03 20130101; Y10T 29/49165
20150115; B23K 2101/40 20180801; B23K 26/362 20130101; B23K 26/0342
20151001; B23K 26/38 20130101; H05K 3/0026 20130101; B23K 26/361
20151001; H01L 21/486 20130101; B23K 26/382 20151001 |
International
Class: |
B23K 26/382 20140101
B23K026/382; B23K 26/38 20140101 B23K026/38; B23K 26/03 20060101
B23K026/03; B23K 26/361 20140101 B23K026/361; B23K 26/362 20140101
B23K026/362; H05K 3/00 20060101 H05K003/00; H01L 21/768 20060101
H01L021/768; H01L 21/48 20060101 H01L021/48; B23K 26/40 20140101
B23K026/40 |
Claims
1. A system for forming an aperture in a microfeature workpiece,
comprising: a laser configured to produce a laser beam along a beam
path; an electromagnetic radiation sensor positioned along the beam
path to sense the laser beam; and a controller operably coupled to
the laser and the electromagnetic radiation sensor, the controller
being configured to-- cause the laser to impinge the laser beam
upon the microfeature workpiece to form a first aperture; cause the
sensor to sense when the laser beam passes through the microfeature
workpiece; and cause the laser to impinge the laser beam at a
second location different that the first location of the
microfeature workpiece and thereby form a second aperture in the
microfeature workpiece based on a determined number of pulses of
the laser beam to form the first aperture and/or a determined
elapsed time to form the first aperture.
2. The system of claim 1, further comprising: a metrology tool
configured to measure a first thickness at a first location and a
second thickness at a second location of the microfeature
workpiece, the first and second locations being different from each
other; and the controller further being configured to-- direct the
metrology tool to measure the first thickness at the first location
of the microfeature workpiece; record the number of pulses of the
laser beam and/or the elapsed time when the beam is sensed as
passing through the microfeature workpiece; direct the metrology
tool to record the second thickness at the second location of the
microfeature workpiece; control the laser beam to form the second
aperture based on the recorded number of pulses and/or the elapsed
time, the first thickness, and the second thickness.
3. The system of claim 2 wherein the first aperture is a test
aperture, and wherein the controller is configured to (a) determine
the number of pulses of the laser beam and/or the elapsed time to
form the test aperture, and (b) control the laser beam based on the
determined number of pulses and/or the determined elapsed time to
form the second aperture in the microfeature workpiece.
4. The system of claim 1 wherein the microfeature workpiece
includes a first surface and a second surface opposite the first
surface, and the system further comprises a workpiece carrier
configured to carry the microfeature workpiece without contacting a
center region of the first surface and a center region of the
second surface of the microfeature workpiece.
5. A system for forming production apertures in a microfeature
workpiece, comprising: a laser configured to produce a laser beam
along a beam path; an electromagnetic radiation sensor positioned
along the beam path to sense the laser beam; and a controller
operably coupled to the laser and the electromagnetic radiation
sensor, the controller being configured to perform a method
comprising-- ablating the microfeature workpiece by directing
pulses of the laser beam to form a test aperture in the
microfeature workpiece; sensing when the laser beam impinges on the
electromagnetic radiation sensor through the test aperture;
determining a number of pulses of the laser beam and/or an elapsed
time to form the test aperture based on when the laser beam
impinges the electromagnetic radiation sensor; and controlling the
laser beam to form production apertures at different locations
through the microfeature workpiece based on the determined number
of pulses and/or the determined elapsed time to form the test
aperture.
6. The system of claim 5 wherein the system further comprises a
workpiece carrier and the controller is further configured to
control the workpiece carrier to move the workpiece such that the
laser beam impinges the microfeature workpiece at desired locations
for the production apertures.
7. The system of claim 6 wherein the microfeature workpiece
includes a first surface and a second surface opposite the first
surface, and the workpiece carrier is configured to carry the
microfeature workpiece without contacting a center region of the
first surface and a center region of the second surface of the
microfeature workpiece.
8. The system of claim 6 wherein the workpiece carrier is
configured to engage a perimeter region of the microfeature
workpiece to support the workpiece.
9. The system of claim 6, further comprising: a metrology tool
configured to measure a first thickness at a first location
corresponding to a desired site for the test aperture and a second
thickness at a second location of the microfeature workpiece
corresponding to a desired site for one of the production
apertures, the first and second locations being different from each
other; and the controller further being configured to-- direct the
metrology tool to measure the first thickness at the first location
of the microfeature workpiece; record the number of pulses of the
laser beam and/or the elapsed time when the sensor senses that the
beam has passed through the microfeature workpiece; direct the
metrology tool to record the second thickness at the second
location of the microfeature workpiece; control the laser beam to
form the production aperture based on the recorded number of pulses
and/or the elapsed time, the first thickness, and the second
thickness.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 15/276,627, filed Sep. 26, 2016; which is a divisional of U.S.
application Ser. No. 14/242,390, filed Apr. 1, 2014, now U.S. Pat.
No. 9,452,492; which is a divisional of U.S. application Ser. No.
14/029,105, filed Sep. 17, 2013, now U.S. Pat. No. 8,686,313; which
is a divisional of U.S. application Ser. No. 11/413,289, filed Apr.
28, 2006, now U.S. Pat. No. 8,536,485; which is a divisional of
U.S. application Ser. No. 10/839,457, filed May 5, 2004, now
abandoned; and is related to U.S. application Ser. No. 11/414,999,
filed May 1, 2006, now U.S. Pat. No. 8,664,562; each of which is
incorporated herein by reference in its entirety.
TECHNICAL FIELD
[0002] The present invention is related to systems and methods for
forming apertures in microfeature workpieces. More particularly,
the invention is directed to systems and methods for forming
apertures with laser beams.
BACKGROUND
[0003] Microelectronic devices are used in cell phones, pagers,
personal digital assistants, computers, and many other products. A
die-level packaged microelectronic device can include a
microelectronic die, an interposer substrate or lead frame attached
to the die, and a molded casing around the die. The microelectronic
die generally has an integrated circuit and a plurality of
bond-pads coupled to the integrated circuit. The bond-pads are
coupled to terminals on the interposer substrate or lead frame. The
interposer substrate can also include ball-pads coupled to the
terminals by conductive traces in a dielectric material. An array
of solder balls is configured so that each solder ball contacts a
corresponding ball-pad to define a "ball-grid" array. Packaged
microelectronic devices with ball-grid arrays are generally higher
grade packages that have lower profiles and higher pin counts than
conventional chip packages that use a lead frame.
[0004] Die-level packaged microelectronic devices are typically
made by (a) forming a plurality of dies on a semiconductor wafer,
(b) cutting the wafer to singulate the dies, (c) attaching
individual dies to an individual interposer substrate, (d)
wire-bonding the bond-pads to the terminals of the interposer
substrate, and (e) encapsulating the dies with a molding compound.
Mounting individual dies to individual interposer substrates is
time consuming and expensive. Also, as the demand for higher pin
counts and smaller packages increases, it becomes more difficult to
(a) form robust wire-bonds that can withstand the forces involved
in molding processes and (b) accurately form other components of
die-level packaged devices. Therefore, packaging processes have
become a significant factor in producing semiconductor and other
microelectronic devices.
[0005] Another process for packaging microelectronic devices is
wafer-level packaging. In wafer-level packaging, a plurality of
microelectronic dies are formed on a wafer and a redistribution
layer is formed over the dies. The redistribution layer includes a
dielectric layer, a plurality of ball-pad arrays on the dielectric
layer, and a plurality of traces coupled to individual ball-pads of
the ball-pad arrays. Each ball-pad array is arranged over a
corresponding microelectronic die, and the traces couple the
ball-pads in each array to corresponding bond-pads on the die.
After forming the redistribution layer on the wafer, a stenciling
machine deposits discrete blocks of solder paste onto the ball-pads
of the redistribution layer. The solder paste is then reflowed to
form solder balls or solder bumps on the ball-pads. After forming
the solder balls on the ball-pads, the wafer is cut to singulate
the dies. Microelectronic devices packaged at the wafer level can
have high pin counts in a small area, but they are not as robust as
devices packaged at the die level.
[0006] In the process of forming and packaging microelectronic
devices, numerous holes are formed in the wafer and subsequently
filled with material to form conductive lines, bond-pads,
interconnects, and other features. One existing method for forming
holes in wafers is reactive ion etching (RIE). In RIE, many holes
on the wafer can be formed simultaneously. RIE, however, has
several drawbacks. For example, RIE may attack features in the
wafer that should not be etched, and the RIE process is slow.
Typically, RIE processes have removal rates of from approximately 5
.mu./min to approximately 50 .mu./min. Moreover, RIE requires
several additional process steps, such as masking and cleaning.
[0007] Another existing method for forming holes in wafers is laser
ablation. A conventional laser ablation process includes forming a
series of test holes in a test wafer to determine the time required
to form various through holes in the test wafer. The test holes are
formed by directing the laser beam to selected points on the wafer
for different periods of time. The test wafer is subsequently
inspected manually to determine the time required to form a through
hole in the wafer. The actual time for use in a run of identical
wafers is then calculated by adding an overdrill factor to the time
required to drill the test holes to ensure that the holes extend
through the wafer. A run of identical wafers is then processed
based on the data from the test wafer. A typical laser can form
more than 10,600 holes through a 750 .ANG. wafer in less than two
minutes.
[0008] Laser ablation, however, has several drawbacks. For example,
the heat from the laser beam creates a heat-affected zone in the
wafer in which doped elements can migrate. Moreover, because the
wafer thickness is generally non-uniform, the laser may not form a
through hole in thick regions of the wafer or the wafer may be
overexposed to the laser beam and consequently have a large
heat-affected zone in thin regions of the wafer. Accordingly, there
exists a need to improve the process of forming through holes or
deep blind holes in microfeature workpieces.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIG. 1 is a schematic view of a system for forming an
aperture in a microfeature workpiece in accordance with one
embodiment of the invention.
[0010] FIG. 2 is a schematic side cross-sectional view of the
system of FIG. 1 with the laser directing a laser beam toward the
microfeature workpiece.
[0011] FIG. 3 is a top plan view of the microfeature workpiece
without a redistribution layer.
[0012] FIG. 4 is a schematic side cross-sectional view of the
system of FIG. 1 with the laser forming a production aperture in
the microfeature workpiece.
DETAILED DESCRIPTION
A. Overview
[0013] The present invention is directed toward systems and methods
for forming apertures in microfeature workpieces. The term
"microfeature workpiece" is used throughout to include substrates
in or on which microelectronic devices, micromechanical devices,
data storage elements, and other features are fabricated. For
example, microfeature workpieces can be semiconductor wafers, glass
substrates, insulated substrates, or many other types of
substrates. Several specific details of the invention are set forth
in the following description and in FIGS. 1-4 to provide a thorough
understanding of certain embodiments of the invention. One skilled
in the art, however, will understand that the present invention may
have additional embodiments, or that other embodiments of the
invention may be practiced without several of the specific features
explained in the following description.
[0014] Several aspects of the invention are directed to methods for
forming apertures in microfeature workpieces. In one embodiment, a
method includes directing a laser beam toward a microfeature
workpiece to form an aperture and sensing the laser beam pass
through the microfeature workpiece in real time. In one aspect of
this embodiment, the method further includes determining a number
of pulses of the laser beam and/or an elapsed time to form the
aperture and controlling the laser beam based on the determined
number of pulses and/or the determined elapsed time to form a
second aperture in the microfeature workpiece. In another aspect of
this embodiment, an electromagnetic radiation sensor senses the
laser beam. The method can further include positioning the
microfeature workpiece between a laser and an electromagnetic
radiation sensor before directing the laser beam.
[0015] In another embodiment, a method includes ablating a
microfeature workpiece by directing pulses of a laser beam to form
a test aperture in the microfeature workpiece and automatically
determining a number of pulses of the laser beam and/or an elapsed
time to form the test aperture. The method further includes
automatically controlling the laser beam based on the determined
number of pulses and/or the determined elapsed time to form a
plurality of production apertures in the microfeature workpiece. In
one aspect of this embodiment, automatically controlling the laser
beam includes directing the laser beam toward the microfeature
workpiece for an adjusted number of pulses and/or an adjusted time
to form at least one of the production apertures. The adjusted
number of pulses can be different from the determined number of
pulses, and the adjusted time can be different from the determined
elapsed time. For example, if the production aperture is a blind
hole, the adjusted number of pulses can be less than the determined
number of pulses and/or the adjusted time can be less than the
determined elapsed time by an underdrill factor. Alternatively, if
the production aperture is a through hole, the adjusted number of
pulses can be greater than the determined number of pulses and/or
the adjusted time can be greater than the determined elapsed time
by an overdrill factor.
[0016] Another aspect of the invention is directed to systems for
forming apertures in microfeature workpieces. In one embodiment, a
system includes a laser configured to produce a laser beam along a
beam path, an electromagnetic radiation sensor positioned along the
beam path to sense the laser beam, and a workpiece carrier
configured to selectively position a microfeature workpiece in the
beam path before the electromagnetic radiation sensor to form an
aperture in the microfeature workpiece. The system can further
include a controller operably coupled to the laser, the
electromagnetic radiation sensor, and the workpiece carrier. The
controller can have a computer-readable medium containing
instructions to perform any one of the above-described methods.
B. Embodiments of Systems for Forming Apertures in Microfeature
Workpieces
[0017] FIG. 1 is a schematic view of a system 100 for forming an
aperture in a microfeature workpiece 160 in accordance with one
embodiment of the invention. In the illustrated embodiment, the
system 100 includes a laser 110, a workpiece carrier 130, a sensor
140, and a controller 150. The laser 110, the workpiece carrier
130, and the sensor 140 are operatively coupled to the controller
150. The laser 110 selectively generates a laser beam 120 to form
apertures in the microfeature workpiece 160 by ablating the
workpiece material. The system 100 can also include a metrology
tool 102 (shown schematically in broken lines) to determine the
thickness of portions of the microfeature workpiece 160.
[0018] The laser 110 can include an illumination source 112, a
galvo mirror 114, and a telecentric lens 116. In one embodiment,
the laser 110 can be a solid-state laser that produces a laser beam
with a wavelength of approximately 355 nm and a pulse frequency of
approximately 10 kHz to approximately 75 kHz. In one aspect of this
embodiment, the power generated by the laser 110 can be
approximately 7 watts, and the laser beam can have a pulse
frequency of approximately 20 kHz to approximately 30 kHz. In
additional embodiments, other lasers may be used with different
configurations.
[0019] The workpiece carrier 130 is configured to hold and properly
position the microfeature workpiece 160. More specifically, the
workpiece carrier 130 positions the microfeature workpiece 160
relative to the laser 110 so that the laser beam 120 forms an
aperture at a desired location on the workpiece 160. The workpiece
carrier 130 can be moveable along three orthogonal axes, such as a
first lateral axis (X direction), a second lateral axis (Y
direction), and/or an elevation axis (Z direction). In other
embodiments, the workpiece carrier 130 may not be movable along all
three orthogonal axes, and/or the laser 110 may be movable.
[0020] In the illustrated embodiment, the workpiece carrier 130
engages and supports the perimeter of the microfeature workpiece
160. More specifically, the microfeature workpiece 160 has a first
surface 166, a second surface 168 opposite the first surface 166,
and a perimeter edge 169. The workpiece carrier 130 can have an
edge-grip end effector configured to engage the perimeter edge 169
of the microfeature workpiece 160 without contacting the first and
second surfaces 166 and 168. In other embodiments, the workpiece
carrier 130 may contact a portion of the first and/or second
surfaces 166 and/or 168 of the microfeature workpiece 160. For
example, the workpiece carrier 130 may engage the perimeter edge
169 and a perimeter region of the second surface 168 to carry the
microfeature workpiece 160 without obscuring the laser beam 120
from passing through the desired points on the workpiece 160.
[0021] The sensor 140 senses electromagnetic radiation to determine
when the aperture has been formed in the microfeature workpiece
160. More specifically, the sensor 140 detects when the laser beam
120 passes through the microfeature workpiece 160 and sends a
signal to the controller 150 indicating that an aperture has been
formed. The sensor 140 can be an electromagnetic radiation sensor,
such as a photodiode, selected to respond to the wavelength of the
laser beam 120. The laser 110 and the sensor 140 can be arranged so
that the workpiece carrier 130 can position the microfeature
workpiece 160 between the laser 110 and the sensor 140. The sensor
140 can be movable relative to the microfeature workpiece 160 to be
aligned with the laser beam 120. For example, the sensor 140 can be
moveable along the three orthogonal axes X, Y and Z. In other
embodiments, the sensor 140 can be fixed relative to the laser 110
such that they can move together.
[0022] FIG. 2 is a schematic side cross-sectional view of the
system 100 with the laser beam 120 directed toward the microfeature
workpiece 160 (shown enlarged for illustrative purposes). In the
illustrated embodiment, the microfeature workpiece 160 includes a
substrate 170 having a plurality of microelectronic dies 180 and a
redistribution layer 190 formed on the substrate 170. Each
microelectronic die 180 can have an integrated circuit 184 (shown
schematically) and a plurality of bond-pads 182 coupled to the
integrated circuit 184. The redistribution layer 190 includes a
dielectric layer 192 and a plurality of ball-pads 196 in the
dielectric layer 192. The ball-pads 196 are arranged in ball-pad
arrays relative to the microelectronic dies 180 such that each die
180 has a corresponding array of ball-pads 196. The redistribution
layer 190 also includes a plurality of conductive lines 194 in or
on the dielectric layer 192 to couple the bond-pads 182 of the
microelectronic dies 180 to corresponding ball-pads 196 in the
ball-pad arrays. In other embodiments, the microfeature workpiece
160 may not include microelectronic dies 180 and/or the
redistribution layer 190. For example, the microfeature workpiece
160 can be a circuit board or other substrate.
C. Embodiments of Methods for Forming Apertures in Microfeature
Workpieces
[0023] FIG. 2 also illustrates an embodiment of a method for
forming apertures in microfeature workpieces. The controller 150
generally contains computer operable instructions that generate
signals for controlling the laser 110, the workpiece carrier 130,
and the sensor 140 to form a single aperture or a plurality of
apertures in the microfeature workpiece 160. In one embodiment, the
controller 150 controls the laser 110 to form a test aperture 162
in the microfeature workpiece 160 and determines the number of
pulses of the laser beam 120 and/or the time required to form the
test aperture 162. In this embodiment, the laser 110 directs the
laser beam 120 toward the first surface 166 of the microfeature
workpiece 160 at a test location to form the test aperture 162. The
laser beam 120 locally ablates the workpiece material and produces
a vapor 161 that can be convected away from the region adjacent to
the test aperture 162. The laser 110 directs the laser beam 120
toward the microfeature workpiece 160 until the sensor 140 senses
the laser beam 120. The sensor 140 detects the laser beam 120 when
the test aperture 162 extends through the microfeature workpiece
160. When the sensor 140 detects the laser beam 120, it sends a
signal to the controller 150 which in turn sends a control signal
to the laser 110 to stop generating the laser beam 120. The
controller 150 stores the elapsed time and/or the number of pulses
of the laser beam 120 required to form the test aperture 162.
[0024] The test aperture 162 can be formed in a noncritical portion
of the microfeature workpiece 160. For example, FIG. 3 is a top
plan view of the microfeature workpiece 160 without the
redistribution layer 190. Referring to FIGS. 2 and 3, test
apertures 162 can be formed in a perimeter region of the
microfeature workpiece 160 proximate to the perimeter edge 169
and/or along the singulation lines A-A (FIG. 3) where the workpiece
160 is cut to separate the packaged microelectronic dies 180.
Accordingly, in the illustrated embodiment, the portion of the
microfeature workpiece 160 that includes the test aperture(s) 162
is not used for circuitry or other components of the dies 180 or
workpiece 160. A plurality of test apertures are generally formed
in a microfeature workpiece, but in many applications only a single
test aperture may be formed in a workpiece. In other embodiments,
not every workpiece in a run of workpieces needs to include a test
aperture.
[0025] FIG. 4 is a schematic side cross-sectional view of the
system 100 with the laser 110 forming a production aperture 164 in
the microfeature workpiece 160. Based on the data gathered from
forming the test aperture 162, the controller 150 and/or an
operator develops a recipe to form the production aperture 164. The
controller 150 can use the number of pulses of the laser beam 120
and/or the elapsed time to form the test aperture 162 in forming
the production aperture 164. For example, the controller 150 can
calculate an expected number of pulses of the laser beam 120
required to form the production aperture 164 based on the stored
number of pulses required to form the test aperture 162.
Additionally, the controller 150 can calculate an expected time
required to form the production aperture 164 based on the stored
elapsed time to form the test aperture 162.
[0026] In one embodiment, the expected number of pulses of the
laser beam 120 and the expected time required to form the
production aperture 164 are determined by multiplying the stored
number of pulses and the stored elapsed time to form the test
aperture 162 by a correction factor. The correction factor can
adjust for differences in the thickness across the microfeature
workpiece 160. For example, the metrology tool 102 (FIG. 1) can
measure the thickness of the workpiece 160 at the test aperture 162
location and at the production aperture 164 location. The
correction factor can account for the difference in the thickness
of the workpiece 160 at the two locations. The correction factor
can also adjust for differences in the workpiece material at the
test aperture 162 location and at the production aperture 164
location. For example, in the illustrated embodiment, the test
aperture 162 is formed through material adjacent to a first die
180a, and the production aperture 164 is formed through the first
die 180a including the bond-pads 182. The correction factor can
also increase the reliability of the process. For example, if the
production aperture is a through hole, the correction factor can
include an overdrill factor to increase the likelihood that the
production aperture is formed completely through the microfeature
workpiece.
[0027] After the controller 150 calculates the expected number of
pulses of the laser beam 120 and/or the expected time required to
form the production aperture 164, the system 100 forms the
production aperture 164 in the microfeature workpiece 160. The
workpiece carrier 130 properly positions the microfeature workpiece
160 relative to the laser 110, and then the laser 110 directs the
laser beam 120 toward the workpiece 160 for the expected number of
pulses of the laser beam 120 and/or for the expected time required
to form the production aperture 164. In this embodiment, the sensor
140 does not need to be aligned with the production aperture 164
because the controller 150 controls the laser 110 based on the data
gathered from forming the test aperture 162. However, in other
embodiments, the system 100 may form the production aperture 164
without first forming the test aperture 162. In these embodiments,
the sensor 140 can be aligned with the production aperture 164 to
signal the controller 150 when the production aperture 164 has been
formed, as described above with reference to FIG. 2. In any of
these embodiments, the system 100 can form a plurality of
production apertures in the microfeature workpiece 160.
[0028] In additional embodiments, the system 100 can also form
blind apertures that do not extend completely through the
microfeature workpiece 160. In these embodiments, the controller
150 can calculate the expected number of pulses and/or the expected
time required to form the blind production aperture based on the
data gathered from forming the test aperture 162 in a process
similar to that described above. More specifically, the expected
number of pulses of the laser beam 120 and the expected time
required to form the blind production aperture can be determined by
multiplying the stored number of pulses and the stored elapsed time
to form the test aperture 162, respectively, by a correction
factor. The correction factor in this application can adjust for
differences in the workpiece material and thickness as described
above to underdrill the workpiece for forming a blind production
aperture. The correction factor also adjusts for the difference
between the depth of the test aperture 162 and the desired depth of
the blind production aperture. In other embodiments, the correction
factor can also adjust for other factors.
[0029] One feature of the system 100 of the illustrated embodiment
is that it provides good control of the exposure time that the
microfeature workpiece 160 is subject to the laser beam 120. The
laser beam 120 can be shut off after an aperture is formed because
either the sensor 140 provides real-time feedback to the controller
150 or the controller 150 is able to accurately predict when the
aperture has been formed. An advantage of this feature is that the
heat-affected zone in the microfeature workpiece 160 is mitigated
because the laser beam 120 is shut off in a timely manner. In prior
art systems, the laser beam continues to pulse even after an
aperture is formed and consequently increases the size of the
heat-affected zone in the workpiece; such sizable heat-affected
zones are detrimental to microelectronic devices because doped
elements can migrate within the zone. Another advantage of the
illustrated system 100 is that it enables high throughput using
lasers and prolongs the life of the laser 110 because the number of
pulses of the laser beam 120 required to form the apertures is
reduced.
[0030] Another feature of the system 100 of the illustrated
embodiment is that the system 100 consistently forms accurate
apertures in the microfeature workpiece 160. An advantage of this
feature is that apertures are consistently formed with a desired
depth. The ability of the system 100 to more precisely determine
the number of pulses of the laser beam 120 and/or the elapsed time
to form a through hole allows the system 100 to avoid overdrilling
and underdrilling.
[0031] From the foregoing, it will be appreciated that specific
embodiments of the invention have been described herein for
purposes of illustration but that various modifications may be made
without deviating from the spirit and scope of the invention.
Accordingly, the invention is not limited except as by the appended
claims.
* * * * *