U.S. patent application number 15/973552 was filed with the patent office on 2018-09-13 for manufacturing method of semiconductor light-emitting device.
This patent application is currently assigned to Genesis Photonics Inc.. The applicant listed for this patent is Genesis Photonics Inc.. Invention is credited to Cheng-Wei Hung, Chin-Hua Hung, Hao-Chung Lee, Yu-Feng Lin, Xun-Xain Zhan.
Application Number | 20180261572 15/973552 |
Document ID | / |
Family ID | 56923785 |
Filed Date | 2018-09-13 |
United States Patent
Application |
20180261572 |
Kind Code |
A1 |
Hung; Chin-Hua ; et
al. |
September 13, 2018 |
MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING DEVICE
Abstract
A manufacturing method of a semiconductor light-emitting device
is provided. Steps of the manufacturing method includes: providing
a substrate; placing at least one light-emitting unit on the
substrate; encapsulating the at least one light-emitting unit onto
the substrate by a phosphor layer and a reflective layer. The
phosphor layer at least covers an upper surface of the at least one
light-emitting unit, and the reflective layer surrounds the at
least one light-emitting unit.
Inventors: |
Hung; Chin-Hua; (Tainan
City, TW) ; Lin; Yu-Feng; (Tainan City, TW) ;
Hung; Cheng-Wei; (Tainan City, TW) ; Lee;
Hao-Chung; (Tainan City, TW) ; Zhan; Xun-Xain;
(Tainan City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Genesis Photonics Inc. |
Tainan City |
|
TW |
|
|
Assignee: |
Genesis Photonics Inc.
Tainan City
TW
|
Family ID: |
56923785 |
Appl. No.: |
15/973552 |
Filed: |
May 8, 2018 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
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15073673 |
Mar 18, 2016 |
|
|
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15973552 |
|
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62134577 |
Mar 18, 2015 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 33/52 20130101;
H01L 27/0248 20130101; H01L 27/15 20130101; H01L 25/0655 20130101;
H01L 33/50 20130101; H01L 2933/0058 20130101; H01L 33/08 20130101;
H01L 2224/48091 20130101; H01L 23/60 20130101; H01L 25/0756
20130101; H01L 23/562 20130101; H01L 33/10 20130101; H01L
2224/49107 20130101; H01L 33/508 20130101; H01L 2933/0041 20130101;
H01L 33/642 20130101; H01L 2933/0025 20130101; H01L 2933/0033
20130101; H01L 25/0657 20130101; H01L 33/486 20130101; H01L
2924/18161 20130101; H01L 33/502 20130101; H01L 33/56 20130101;
H01L 33/647 20130101; H01L 2224/16225 20130101; H01L 29/866
20130101; H01L 33/60 20130101; H01L 25/0753 20130101; H01L 33/48
20130101; H01L 2224/48091 20130101; H01L 2924/00014 20130101 |
International
Class: |
H01L 25/065 20060101
H01L025/065; H01L 23/60 20060101 H01L023/60; H01L 33/48 20100101
H01L033/48; H01L 33/64 20100101 H01L033/64; H01L 25/075 20060101
H01L025/075; H01L 27/02 20060101 H01L027/02; H01L 27/15 20060101
H01L027/15; H01L 29/866 20060101 H01L029/866; H01L 33/08 20100101
H01L033/08; H01L 33/10 20100101 H01L033/10; H01L 33/60 20100101
H01L033/60; H01L 23/00 20060101 H01L023/00; H01L 33/52 20100101
H01L033/52; H01L 33/50 20100101 H01L033/50 |
Claims
1. A manufacturing method of a semiconductor light-emitting device,
comprising: providing a substrate; placing at least one
light-emitting unit on the substrate; and encapsulating the at
least one light-emitting unit onto the substrate by a phosphor
layer and a reflective layer, wherein the phosphor layer at least
covers an upper surface of the at least one light-emitting unit,
and the reflective layer surrounds the at least one light-emitting
unit.
2. The manufacturing method of claim 1, wherein the step of
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer further
comprises: placing the reflective layer on the substrate, the
reflective layer covering a side surface of the at least one
light-emitting unit; and placing the phosphor layer on the upper
surface of the at least one light-emitting unit or on the upper
surface of the at least one light-emitting unit and an upper
surface of the reflective layer after the reflective layer covers
the side surface of the at least one light-emitting unit.
3. The manufacturing method of claim 2, wherein the upper surface
of the reflective layer is substantially co-planar with the upper
surface of the at least one light-emitting unit.
4. The manufacturing method of claim 1, wherein the step of
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer further
comprises: encapsulating the at least one light-emitting unit onto
the substrate by the phosphor layer; and placing the reflective
layer on a side surface of the phosphor layer of the at least one
light-emitting unit.
5. The manufacturing method of claim 4, wherein an upper surface of
the reflective layer is substantially higher than the upper surface
of the at least one light-emitting unit.
6. The manufacturing method of claim 1, wherein after encapsulating
the at least one light-emitting unit onto the substrate by the
phosphor layer and the reflective layer, the manufacturing method
further comprises: encapsulating the at least one light-emitting
unit, the phosphor layer, and the reflective layer onto the
substrate by a molding compound.
7. The manufacturing method of claim 1, wherein before
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer; the
manufacturing method further comprises: placing a blocking wall on
the substrate, the blocking wall surrounding a light-emitting
region, wherein the at least one light-emitting unit, the phosphor
layer, and the reflective layer are arranged in the light-emitting
region.
8. The manufacturing method of claim 7, wherein when the at least
one light-emitting unit is encapsulated onto the substrate by the
phosphor layer and the reflective layer, the blocking wall is
adapted to restricting the reflective layer to be located in the
light-emitting region.
9. The manufacturing method of claim 1, wherein the step of placing
the at least one light-emitting unit on the substrate further
comprises: placing a plurality of light-emitting chips on the
substrate, the light-emitting chips being connected together and
constituting the at least one light-emitting unit.
10. The manufacturing method of claim 1, wherein if the quantity of
the at least one light-emitting units is plural, the reflective
layer is further arranged between the light-emitting units.
Description
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application is a divisional application of and claims
the priority benefit of U.S. application Ser. No. 15/073,673, filed
on Mar. 18, 2016, now pending, which claims the priority benefit of
U.S. provisional application Ser. No. 62/134,577, filed on Mar. 18,
2015. The entirety of each of the above-mentioned patent
applications is hereby incorporated by reference herein and made a
part of this specification.
FIELD OF INVENTION
[0002] The invention relates to a light-emitting device and a
manufacturing method thereof. In particular, the invention relates
to a manufacturing method of a semiconductor light-emitting
device.
DESCRIPTION OF RELATED ART
[0003] Among conventional light source products, solid lighting
devices formed by semiconductors (e.g., light-emitting diode (LED),
organic LED (OLED), and polymer LED) have been widely applied in
daily lives of human beings. The LED characterized by low power
consumption, long service life, and small volume has been replacing
the conventional light source.
[0004] In order to provide light with proper color, the
conventional LED light source not only emits light from the LED but
also generates excited light through exciting phosphor by applying
the light emitted from the LED; further, the light emitted from the
LED and the excited light can be mixed to generate the light with
the proper color. However, whether the phosphor is uniformly
sprayed onto the LED or not also poses an impact on the overall
light-emitting quality of the light source.
[0005] The phosphor sprayed onto the side surface of the LED is
very much likely to have uneven thickness or to be distributed
non-uniformly. For instance, if the amount of yellow phosphor
distributed onto the side surface of a blue LED is insufficient, or
if the blue LED is even exposed due to the insufficient amount of
the yellow phosphor, the blue beam is emitted from the side surface
(i.e., at a large angle) of the blue LED light source. By contrast,
if the amount of the yellow phosphor distributed onto the side
surface of the blue LED is excessive, the yellow beam is emitted
from the side surface (i.e., at a large angle) of the blue LED
light source. Both of said conditions deteriorate the
light-emitting quality of the overall light source, reduce the
yield of the light source, and raise the overall manufacturing
costs.
SUMMARY OF THE INVENTION
[0006] The invention is directed to a semiconductor light-emitting
device that is characterized by exceptional light-emitting
quality.
[0007] The invention is directed to a manufacturing method of a
semiconductor light-emitting device, and the manufacturing method
can be applied to form the semiconductor light-emitting device
characterized by exceptional light-emitting quality.
[0008] In an embodiment of the invention, a semiconductor
light-emitting device includes a substrate, at least one
light-emitting unit arranged on the substrate, a phosphor layer at
least covering an upper surface of the at least one light-emitting
unit, and a reflective layer arranged on the substrate. The
reflective layer surrounds the at least one light-emitting
unit.
[0009] According to an embodiment of the invention, the reflective
layer covers a side surface of the at least one light-emitting
unit.
[0010] According to an embodiment of the invention, an upper
surface of the reflective layer is substantially co-planar with the
upper surface of the at least one light-emitting unit.
[0011] According to an embodiment of the invention, the phosphor
layer encapsulates the at least one light-emitting unit onto the
substrate, and the reflective layer covers the side surface of the
phosphor layer configured to encapsulate the at least one
light-emitting unit.
[0012] According to an embodiment of the invention, an upper
surface of the reflective layer is substantially higher than the
upper surface of the at least one light-emitting unit.
[0013] According to an embodiment of the invention, the
semiconductor light-emitting device further includes a molding
compound. The molding compound encapsulates the at least one
light-emitting unit, the phosphor layer, and the reflective layer
onto the substrate.
[0014] According to an embodiment of the invention, the
semiconductor light-emitting device further includes a blocking
wall. The blocking wall is arranged on the substrate and surrounds
a light-emitting region, and the at least one light-emitting unit,
the phosphor layer, and the reflective layer are arranged in the
light-emitting region.
[0015] According to an embodiment of the invention, an upper
surface of the reflective layer is substantially lower than the
upper surface of the at least one light-emitting unit and an upper
surface of the blocking wall.
[0016] According to an embodiment of the invention, the at least
one light-emitting unit comprises a plurality of light-emitting
chips, and the light-emitting chips are connected together.
[0017] According to an embodiment of the invention, if the quantity
of the at least one light-emitting units is plural, the reflective
layer is further arranged between the light-emitting units.
[0018] In an embodiment of the invention, a manufacturing method of
a semiconductor light-emitting device includes: providing a
substrate; placing at least one light-emitting unit on the
substrate; encapsulating the at least one light-emitting unit onto
the substrate by a phosphor layer and a reflective layer. The
phosphor layer at least covers an upper surface of the at least one
light-emitting unit, and the reflective layer surrounds the at
least one light-emitting unit.
[0019] According to an embodiment of the invention, the step of
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer further
includes: placing the reflective layer on the substrate, wherein
the reflective layer covers side surface of the at least one
light-emitting unit; placing the phosphor layer on the upper
surface of the at least one light-emitting unit or on the upper
surface of the at least one light-emitting unit and an upper
surface of the reflective layer after the reflective layer covers
the side surface of the at least one light-emitting unit.
[0020] According to an embodiment of the invention, an upper
surface of the reflective layer is substantially co-planar with the
upper surface of the at least one light-emitting unit.
[0021] According to an embodiment of the invention, the step of
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer further
includes: encapsulating the at least one light-emitting unit onto
the substrate by the phosphor layer and placing the reflective
layer on a side surface of the phosphor layer of the at least one
light-emitting unit.
[0022] According to an embodiment of the invention, an upper
surface of the reflective layer is substantially higher than the
upper surface of the at least one light-emitting unit.
[0023] According to an embodiment of the invention, after
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer, the
manufacturing method further includes: encapsulating the at least
one light-emitting unit, the phosphor layer, and the reflective
layer onto the substrate by a molding compound.
[0024] According to an embodiment of the invention, before
encapsulating the at least one light-emitting unit onto the
substrate by the phosphor layer and the reflective layer, the
manufacturing method further includes: placing a blocking wall on
the substrate, wherein the blocking wall surrounds a light-emitting
region, and the at least one light-emitting unit, the phosphor
layer, and the reflective layer are arranged in the light-emitting
region.
[0025] According to an embodiment of the invention, when the at
least one light-emitting unit is encapsulated onto the substrate by
the phosphor layer and the reflective layer, the blocking wall is
adapted to restricting the reflective layer to be located in the
light-emitting region.
[0026] According to an embodiment of the invention, the step of
placing the at least one light-emitting unit on the substrate
further includes: placing a plurality of light-emitting chips on
the substrate, wherein the light-emitting chips are connected
together and constitute the at least one light-emitting unit.
[0027] According to an embodiment of the invention, if the quantity
of the at least one light-emitting units is plural, the reflective
layer is further arranged between the light-emitting units.
[0028] Based on the above, the reflective layer of the
semiconductor light-emitting device provided in an embodiment of
the invention can block the light emitted from the side surface of
the light-emitting unit, such that the semiconductor light-emitting
device is capable of emitting light with favorable quality.
Besides, according to the manufacturing method of the semiconductor
light-emitting device provided herein, when the light-emitting unit
is encapsulated by the phosphor layer and the reflective layer, the
side surface of the light-emitting unit is covered, and the
semiconductor light-emitting device capable of emitting light with
favorable quality can be formed.
[0029] Several exemplary embodiments accompanied with figures are
described in detail below to further describe the disclosure in
details.
BRIEF DESCRIPTION OF THE DRAWINGS
[0030] The accompanying drawings are included to provide a further
understanding of the disclosure, and arc incorporated in and
constitute a part of this specification. The drawings illustrate
embodiments of the invention and, together with the description,
serve to explain the principles of the disclosure.
[0031] FIG. 1A is a schematic top view illustrating a semiconductor
light-emitting device according to a first embodiment of the
invention.
[0032] FIG. 1B is a cross-sectional view taken along line
I.sub.1I.sub.1 depicted in FIG. 1A.
[0033] FIG. 2A to FIG. 2D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a second embodiment of the invention.
[0034] FIG. 3A to FIG. 3D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a third embodiment of the invention.
[0035] FIG. 4 is a schematic top view illustrating a semiconductor
light-emitting device according to a fourth embodiment of the
invention.
[0036] FIG. 5A to FIG. 5D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a fourth embodiment of the invention.
[0037] FIG. 6A to FIG. 6D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a fifth embodiment of the invention.
[0038] FIG. 6E is a cross-sectional view illustrating a
semiconductor light-emitting device according to another embodiment
of the invention.
[0039] FIG. 7A is a schematic top view illustrating a semiconductor
light-emitting device according to a sixth embodiment of the
invention.
[0040] FIG. 7B is a cross-sectional view taken along line
I.sub.3I.sub.3 depicted in FIG. 7A.
DETAILED DESCRIPTION OF DISCLOSED EMBODIMENTS
[0041] FIG. 1 A is a schematic top view illustrating a
semiconductor light-emitting device according to a first embodiment
of the invention. FIG. 1B is a cross-sectional view taken along
line I.sub.1I.sub.1 depicted in FIG. 1A. With reference to FIG. 1A
and FIG. 1B, a semiconductor light-emitting device 100 provided in
the first embodiment of the invention includes a substrate 110, a
light-emitting unit 120 arranged on the substrate 110, a phosphor
layer 130, and a reflective layer 140. The phosphor layer 130 at
least covers an upper surface 121 of the light-emitting unit 120,
and the reflective layer 140 arranged on the substrate 110
surrounds the light-emitting unit 120. That is, in the
semiconductor light-emitting device 100 provided in the present
embodiment, the phosphor layer 130 adjoins the upper surface 121 of
the light-emitting unit 120, and the reflective layer 140 adjoins a
side surface 123 of the light-emitting unit 120.
[0042] In the semiconductor light-emitting device 100 provided in
the first embodiment, the light-emitting unit 120 is encapsulated
onto a surface 111 of the substrate 110 by the phosphor layer 130
and the reflective layer 140. Since the phosphor layer 130 covers
the upper surface 121 of the light-emitting unit, the thickness of
the phosphor layer 130 is proper, such that the light emitted from
the upper surface 121 of the light-emitting unit 120 can be
converted to have appropriate color by means of the phosphor layer
130. On the other hand, the reflective layer 140 is capable of
covering or reflecting the light emitted from the side surface 123
of the light-emitting unit 120 and simultaneously reflect the light
reflected by the phosphor layer 130 or by other optical devices on
the upper surfaces 121 of the light-emitting units 120. Hence, the
light emitted by the semiconductor light-emitting device 100 is
mainly the light with proper color and mainly come from the upper
surface 121 of the light-emitting unit 120. Thereby, the overall
light-emitting quality of the semiconductor light-emitting device
100 is further improved.
[0043] In the first embodiment, the semiconductor light-emitting
device 100 is exemplified to elaborate the semiconductor
light-emitting device provided in the embodiments of the invention,
which should however not be construed as a limitation to the
invention. Other exemplary semiconductor light-emitting devices and
the manufacturing method thereof are provided in some other
embodiments below to elaborate the semiconductor light-emitting
device discussed in the disclosure.
[0044] FIG. 2A to FIG. 2D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a second embodiment of the invention. With
reference to FIG. 2A, according to the manufacturing method of the
semiconductor light-emitting device provided in the second
embodiment, a substrate 110A is provided, and a light-emitting unit
120A is placed on the substrate 110A.
[0045] Specifically, the substrate 110A provided in the present
embodiment is a ceramic substrate whose surface 111A has a circuit
layer, and thus the substrate 110A is suitable for providing
carrying, electrical connection, and heat dissipation function for
the light-emitting unit 120A. In another aspect, the light-emitting
unit 120A provided herein is a flip-chip LED, for instance; hence,
the light-emitting unit 120 can be directly electrically connected
to the surface 111A of the substrate 110A.
[0046] With reference to FIG. 2B and FIG. 2C, according to the
manufacturing method of the semiconductor light-emitting device
provided in the present embodiment, after the light-emitting unit
120A is placed on the substrate 110A, the light-emitting unit 120A
is encapsulated onto the substrate 110A by a phosphor layer 130A
and a reflective layer 140A. That is, the phosphor layer 130A and
the reflective layer 140A provided in the present embodiment
basically cover the surface of the light-emitting unit 120A exposed
by the substrate 110A.
[0047] To be specific, as shown in FIG. 2B, in the manufacturing
method of the semiconductor light-emitting device provided herein,
the reflective layer 140A is placed on the surface 111A of the
substrate 110A, and the reflective layer 140A surrounds the
light-emitting unit 120A and further covers a side surface 123A of
the light-emitting unit 120A.
[0048] With reference to FIG. 2C, the reflective layer 140A
provided in the present embodiment surrounds the light-emitting
unit 120A along the side surface 123A of the light-emitting unit
120A, and an upper surface 141A of the reflective layer 140A and an
upper surface 121A of the light-emitting unit 120A are
substantially co-planar. Hence, in the manufacturing method of the
semiconductor light-emitting device provided herein, after the
reflective layer 140A is placed on the substrate 110A, the phosphor
layer 130A can be well placed on the upper surface 141A of the
reflective layer 140A and an upper surface 121A of the
light-emitting unit 120A, and the light-emitting unit 120A can then
be encapsulated onto the substrate 110A. Namely, in the step of
encapsulating the light-emitting unit 120A onto the substrate 110A
by the phosphor layer 130A and the reflective layer 140A, the
reflective layer 140A is placed on the substrate 110A, and the
phosphor layer 130A is then placed on the reflective layer 140A.
Since the upper surface 141A of the reflective layer 140A and the
upper surface 121A of the light-emitting unit 120A are
substantially co-planar, the phosphor layer 130A can well cover
said two upper surfaces 141A and 121A.
[0049] Particularly, the material of the reflective layer 140A
includes silicone and titanium dioxide (TiO.sub.2), for instance,
and the viscosity of the reflective layer 140A is within a range
from 1000 mPas to 20000 mPas, for instance. The reflectivity of the
reflective layer 140A falls within a range from 90% to 99%. The
phosphor layer is made of phosphor and adhesives. However, the
material, the viscosity, and the reflectivity of the reflective
layer 140A are not limited in the invention, and neither is the
material of the phosphor. In other embodiments of the invention,
the reflective layer can be made of other materials with proper
viscosity and reflectivity, and the phosphor layer can be made of
the mixture of proper substance and phosphor capable of achieving
the effects of fluorescent light. To be more specific, the
reflective layer 140A provided herein is made of white glue and
thus can be easily formed on the substrate 110A as well as surround
the light-emitting unit 120A.
[0050] With reference to FIG. 2D, according to the manufacturing
method of the semiconductor light-emitting device provided in the
second embodiment, after the light-emitting unit 120A is
encapsulated onto the substrate 110A by the phosphor layer 130A and
the reflective layer 140A, the light-emitting unit 120A, the
phosphor layer 130A, and the reflective layer 140A are further
encapsulated onto the substrate 110A by a molding compound 150A.
The molding compound 150A is made of a transparent material or a
light transmissive material and is suitable for covering the
light-emitting unit 120A, the phosphor layer 130A, and the
reflective layer 140A on the substrate 110A. Here, the molding
compound 150A can be shaped as a lens, such that the light emitted
from the light-emitting unit 120A can be refracted by the molding
compound 150A and can thus provide illumination at a proper
light-emitting angle.
[0051] In view of the above, according to the manufacturing method
of the semiconductor light-emitting device provided herein, the
light-emitting unit 120A is encapsulated onto the substrate 110A by
the reflective layer 140A and the phosphor layer 130A, and the
reflective layer 140A arranged on the substrate 110A surrounds the
light-emitting unit 120A. Hence, the reflective layer 140A can
block the light emitted from the side surface of the light-emitting
unit 120A, and the light emitted from the upper surface 121A of the
light-emitting unit 120A can be converted to have proper color by
means of the phosphor layer 130A that has the appropriate thickness
and uniformly covers the upper surface of the light-emitting unit
120A. As a result, by applying the manufacturing method of the
semiconductor light-emitting device discussed herein, the
semiconductor light-emitting device 100A characterized by
exceptional light-emitting quality can be formed. However, the
manufacturing method of the semiconductor light-emitting device
provided in the disclosure is not limited to that described in the
second embodiment.
[0052] FIG. 3A to FIG. 3D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a third embodiment of the invention. With
reference to FIG. 3A, the manufacturing method of the semiconductor
light-emitting device provided in the third embodiment is similar
to that described in the second embodiment above, i.e., a substrate
110B is provided, and a light-emitting unit 120B is placed on the
substrate 110B. The substrate 110B is suitable for providing
carrying, electrical connection, and heat dissipation function for
the light-emitting unit 120B.
[0053] With reference to FIG. 3B, in the manufacturing method of
the semiconductor light-emitting device provided herein, the
phosphor layer 130B is placed on the substrate 110B and the
light-emitting unit 120B, and the light-emitting unit 120B is
encapsulated onto the substrate 110B by the phosphor layer 130B.
Namely, according to the manufacturing method of the semiconductor
light-emitting device provided herein, the phosphor layer 130B
covers the upper surface 121B and the side surface 123B of the
light-emitting unit 120B.
[0054] With reference to FIG. 3C, in the manufacturing method of
the semiconductor light-emitting device provided herein, after the
phosphor layer 130E is placed on the substrate 110B and the
light-emitting unit 120B, the reflective layer 140B surrounding the
light-emitting unit 120B is placed on the side surface 131B of the
phosphor layer 130B. Note that the phosphor layer 130B is
configured to encapsulate the light-emitting unit 120B. Hence, the
light emitted from the side surface 123B of the light-emitting unit
120B is reflected by the reflective layer 140B, and thus only the
light from the upper surface 121B of the light-emitting unit 120B
can be emitted.
[0055] The phosphor layer 130B formed on the upper surface 121B of
the light-emitting unit 120B has the proper thickness; hence, the
light-emitting unit 120B is capable of emitting the light with
proper color through the phosphor layer 130B, and the light beams
with significantly different colors can be blocked by the
reflective layer 140B.
[0056] Particularly, the upper surface 141B of the reflective layer
140B provided in the present embodiment is substantially higher
than the upper surface 121B of the light-emitting unit 120B and
thus can achieve favorable optical blocking effects.
[0057] Particularly, the material of the reflective layer 140B
includes silicone and titanium dioxide (TiO.sub.2), for instance,
and the viscosity of the reflective layer 140B is within a range
from 1000 mPas to 20000 mPas, for instance. The reflectivity of the
reflective layer 140B falls within a range from 90% to 99%. The
phosphor layer is made of phosphor or adhesives. However, the
material, the viscosity, and the reflectivity of the reflective
layer 140B are not limited in the invention, and neither is the
material of the phosphor. In other embodiments of the invention,
the reflective layer can be made of other materials with proper
viscosity and reflectivity, and the phosphor layer can be made of
the mixture of proper substance and phosphor capable of achieving
the effects of fluorescent light.
[0058] With reference to FIG. 3D, according to the manufacturing
method of the semiconductor light-emitting device provided in the
third embodiment, after the light-emitting unit 120B is
encapsulated onto the substrate 110B by the phosphor layer 130B and
the reflective layer 140B, the light-emitting unit 120B, the
phosphor layer 130B, and the reflective layer 140B are further
encapsulated onto the substrate 110B by a molding compound 150B.
The molding compound 150B is made of a transparent material or a
light transmissive material and is suitable for covering the
light-emitting unit 120B, the phosphor layer 130B, and the
reflective layer 140B on the substrate 110B. Here, the molding
compound 150B can be shaped as a lens, such that the light emitted
from the light-emitting unit 120B can be refracted by the molding
compound 150B and can thus provide illumination at a proper
light-emitting angle.
[0059] In view of the above, according to the manufacturing method
of the semiconductor light-emitting device provided herein, the
light-emitting unit 120B is encapsulated onto the substrate 110B by
the reflective layer 140B and the phosphor layer 130B, and the
reflective layer 140B arranged on the substrate 110B surrounds the
light-emitting unit 120B covered by the phosphor layer 130B. Hence,
the reflective layer 140B can block the light emitted from the side
surface of the light-emitting unit 120B, and the light emitted from
the upper surface 121B of the light-emitting unit 120B can be
converted to have proper color by means of the phosphor layer 130B
that has the appropriate thickness and uniformly covers the upper
surface 121B of the light-emitting unit 120B. As a result, by
applying the manufacturing method of the semiconductor
light-emitting device discussed herein, the semiconductor
light-emitting device 100B characterized by exceptional
light-emitting quality can be formed.
[0060] FIG. 4 is a schematic top view illustrating a semiconductor
light-emitting device according to a fourth embodiment of the
invention. In the second or third embodiment, the light-emitting
unit is individually processed; by contrast, with reference to FIG.
4, the light-emitting unit 120C of the semiconductor light-emitting
device 100C provided in the fourth embodiment of the invention
comprises plural light-emitting chips 122C connected together. The
light-emitting chips 122C are arranged to form the light-emitting
device 120C with proper size and shape.
[0061] According to the present embodiment, the semiconductor
light-emitting device 100C further includes a blocking wall 160C
that surrounds a light-emitting region A, and the light-emitting
unit 120C, the phosphor layer 130C, and the reflective layer 140C
are arranged in the light-emitting region A. The manufacturing
method of the semiconductor light-emitting device 100C provided in
the fourth embodiment of the invention and the semiconductor
light-emitting device 100C are elaborated with reference to
cross-sectional views.
[0062] To clearly explain the semiconductor light-emitting device
and the manufacturing method thereof in the present embodiment.
FIG. 5A to FIG. 5D that are cross-sectional views illustrating
steps in a manufacturing method of the semiconductor light-emitting
device 100C according to the fourth embodiment of the invention are
provided. Besides, the cross-sectional views in FIG. 5A to FIG. 5D
correspond to the section line I.sub.2I.sub.2 in FIG. 4, for
instance,
[0063] Similar to the previous embodiment, in the present
embodiment as shown in FIG. 5A, a substrate 110C is provided, and a
light-emitting unit 120C is placed on the substrate 110C. The
substrate 110C is suitable for providing carrying, electrical
connection, and heat dissipation function for the light-emitting
unit 120C.
[0064] With reference to FIG. 5B, according to the manufacturing
method of the semiconductor light-emitting device provided in the
present embodiment, after the light-emitting unit 120C is formed on
the substrate 110C, a blocking wall 160C is placed on the substrate
110C and surrounds the light-emitting region A. That is, the
blocking wall 160C is fixed onto the upper surface 111C of the
substrate 110C and surrounds the light-emitting region A where the
light-emitting unit 120C is located.
[0065] In particular, the material of the blocking wall 160C
includes silicone and TiO.sub.2 (or silicon dioxide, SiO.sub.2) and
is pre-solidified on the substrate 110C to surround the
light-emitting region A.
[0066] With reference to FIG. 5C, according to the manufacturing
method of the semiconductor light-emitting device, after the
blocking wall 160C is placed on the substrate 110C, the
light-emitting region A is filled with the reflective layer 140C.
The blocking wall 160C is suitable for limiting the reflective
layer 140C to be located in the light-emitting region A, and the
reflective layer 140C exposes the upper surface 122C of the
light-emitting unit 120C and further blocks the light emitted from
the side surface 123C of the light-emitting unit 120C.
[0067] Particularly, the material of the reflective layer 140A
includes silicone and TiO.sub.2, for instance, and the viscosity of
the reflective layer 140C is within a range from 1000 mPas to 20000
mPas, for instance. The reflectivity of the reflective layer 140C
falls within a range from 90% to 99%. However, the material, the
viscosity, and the reflectivity of the reflective layer 140C are
not limited in the invention, and neither is the material of the
phosphor. In other embodiments of the invention, the reflective
layer may be made of other materials with proper viscosity and
reflectivity.
[0068] With reference to FIG. 5D, in the manufacturing method of
the semiconductor light-emitting device, after the reflective layer
140C is arranged, the phosphor layer 130C is placed on the upper
surface 121C of the light-emitting unit 120C. In other words, the
light-emitting unit 120C, the phosphor layer 130C, and the
reflective layer 140C are all arranged in the light-emitting region
A surrounded by the blocking wall 160C, so as to form the
semiconductor light-emitting device 100C.
[0069] FIG. 6A to FIG. 6D are cross-sectional views illustrating
steps in a manufacturing method of a semiconductor light-emitting
device according to a fifth embodiment of the invention. Similar to
the previous embodiment, in the present embodiment as shown in FIG.
6A, a substrate 110D is provided, and a light-emitting unit 120D is
placed on the substrate 110D. The substrate 110D is suitable for
providing carrying, electrical connection, and heat dissipation
function to the light-emitting unit 120D.
[0070] With reference to FIG. 6B, according to the manufacturing
method of the semiconductor light-emitting device provided in the
present embodiment, after the light-emitting unit 120D is formed on
the substrate 110D, a phosphor layer 130D is placed on the
substrate 110D and the light-emitting unit 120D, and the
light-emitting unit 120D is further encapsulated onto the substrate
110D by the phosphor layer 130D. Namely, according to the
manufacturing method of the semiconductor light-emitting device
provided herein, the phosphor layer 130D covers the upper surface
121D and the side surface 123D of the light-emitting unit 120D.
[0071] With reference to FIG. 6C, according to the manufacturing
method of the semiconductor light-emitting device provided in the
present embodiment, after the phosphor layer 130D is arranged to
cover the light-emitting unit 120D, a blocking wall 160D is placed
on the substrate 110D and surrounds the light-emitting region B.
Namely, the blocking wall 160D is fixed onto the substrate 110D and
surrounds the light-emitting unit 120D covered by the phosphor
layer 130D.
[0072] In particular, the material of the blocking wall 160C
includes silicone and TiO.sub.2 (or SiO.sub.2) and is
pre-solidified on the substrate 110D to surround the light-emitting
region B.
[0073] With reference to FIG. 6D, according to the manufacturing
method of the semiconductor light-emitting device, after the
blocking wall 160D is placed on the substrate 110D, the
light-emitting region B is filled with the reflective layer 140D.
The blocking wall 160D is suitable for limiting the reflective
layer 140D to be located in the light-emitting region B, and the
reflective layer 140D exposes a portion of the phosphor layer 130D
adjoining the upper surface 122D of the light-emitting unit 120D
and further blocks the light emitted from the side surface of the
light-emitting unit 120D. In brief, according to the manufacturing
method of the semiconductor light-emitting device provided in the
present embodiment, after the light-emitting unit 120D, the
phosphor layer 130D, and the blocking wall 160D are placed on the
substrate 110D, the light-emitting region B surrounded by the
blocking wall 160D is filled with the reflective layer 140D, so as
to form the light-emitting device 100D.
[0074] In view of the above, according to the manufacturing method
of the semiconductor light-emitting device provided herein, the
light-emitting unit 120D is encapsulated onto the substrate 110D by
the reflective layer 140D and the phosphor layer 130D, and the
blocking wall 160D can prevent the reflective layer 140D from
overflowing to the outside of the light-emitting region B or the
outside of the substrate 110D. Thereby, the production yield of the
semiconductor light-emitting device 100D can be improved. The
reflective layer 140D on the substrate 110D surrounds the
light-emitting unit 120D covered by the phosphor layer 130D.
Therefore, the reflective layer 140D is capable of blocking the
light emitted from the side surface of the light-emitting unit
120D, and the light emitted from the upper surface 121D of the
light-emitting unit 120D can be converted to a proper color by
means of the phosphor layer 130D that has the appropriate thickness
and uniformly covers the upper surface 121D of the light-emitting
unit 120D. As a result, by applying the manufacturing method of the
semiconductor light-emitting device discussed herein, the
semiconductor light-emitting device 100D characterized by
exceptional light-emitting quality can be formed.
[0075] On the other hand, the arrangement of encapsulating the
light-emitting unit 120D onto the substrate 110D by the phosphor
layer 130D as described in the fifth embodiment should not be
construed as a limitation to the invention. FIG. 6E is a
cross-sectional view illustrating a semiconductor light-emitting
device according to another embodiment of the invention. With
reference to FIG. 6E, similar to the manufacturing method of the
semiconductor light-emitting device 100D provided in the fifth
embodiment, the manufacturing method of the semiconductor
light-emitting device 200D provided herein includes steps of
placing a light-emitting chip 222D of a light-emitting unit 220D on
a substrate 210D and covering an upper surface 221D of the
light-emitting unit 220D by a phosphor layer 230D. A blocking wall
260D is located on the substrate 210D and surrounds the
light-emitting region B, the light-emitting unit 220D equipped with
the phosphor layer 230D is located in the light-emitting region B,
and the reflective layer 240D can fill the light-emitting region B
and surrounds the light-emitting unit 220D. That is, in the present
embodiment, the phosphor layer 230D covers a portion of the surface
of the light-emitting unit 220D, and the blocking wall 260D and the
reflective layer 240D are formed. The large height of the
reflective layer 240 allows the reflective layer 240D to better
cover the side surface of the light-emitting unit 220D, and
accordingly the light emitted by the semiconductor light-emitting
device 200D can be reflected in an upward direction.
[0076] In the fourth embodiment and the fifth embodiment, the
light-emitting chips 122C and 122D are closely arranged, which
should however not be construed as a limitation to the invention.
In another embodiment, the distance between the light-emitting
chips may be 50 micrometers (.mu.m) constantly.
[0077] FIG. 7A is a schematic top view illustrating a semiconductor
light-emitting device according to a sixth embodiment of the
invention. To clearly depict the relevant relationship among the
devices in the semiconductor light-emitting device, the phosphor
layer is omitted, which should however not be construed as a
limitation to the invention. With reference to FIG. 7A, the
semiconductor light-emitting device 100E provided in the sixth
embodiment of the invention includes a plurality of light-emitting
units 120E, a blocking wall 160E, and a reflective layer 140E on
the substrate 110E. The light-emitting units 120E are located on
the light-emitting region C on the substrate 110E, and the blocking
wall 160E surrounds the light-emitting region C. Hence, the
blocking wall 160E can restrict the reflective layer 140E to be
located in the light-emitting region C, and the reflective layer
140E is arranged among the light-emitting units 120E, so as to
provide a large reflective surface and improve the overall
light-emitting efficiency of the semiconductor light-emitting
device 100E.
[0078] FIG. 7B is a cross-sectional view taken along a line
I.sub.3I.sub.3 depicted in FIG. 7A. With reference to FIG. 7B, a
metal layer 170E is placed on the substrate 110E, and the
light-emitting units 120E are arranged on a metal surface 171E of
the metal layer 170E. The substrate 110E provided herein is made of
a ceramic material or a metal material, so as to dissipate the heat
from the light-emitting units 120E to a great extent.
[0079] In the present embodiment, the light-emitting units 120E and
the metal layer 170E are located on the light-emitting region C on
the substrate 110E, and the blocking wall 160E surrounds the
light-emitting region C after the light-emitting units 120E are
arranged on the metal surface 171E. In particular, the material of
the blocking wall 160E includes silicone and TiO.sub.2 (or
SiO.sub.2) and is pre-solidified on the substrate 110E to surround
the light-emitting region C.
[0080] In the present embodiment, the reflective layer 140E is
located in the light-emitting region C, and the blocking wall 160E
is suitable of limiting the reflective layer 140E to be located in
the light-emitting region C. The space among the light-emitting
units 120E is filled with the reflective layer 140E, i.e., the
reflective layer 140E in the light-emitting region C is located in
an area exposed by the light-emitting units 120E and covers the
side surfaces of the light-emitting units 120E.
[0081] From another perspective, an upper surface 141E of the
reflective layer 140E is substantially lower than upper surfaces
121E of the light-emitting units 120E and an upper surface 161E of
the blocking wall 160E. That is, the upper surface 141E of the
reflective layer 140E is co-planar with or lower than the upper
surfaces of the light-emitting units 120E, and thus the flowable
material constituting the reflective layer 140E can be easily
formed in the light-emitting region C.
[0082] According to the present embodiment, the phosphor layer 130E
covers the reflective layer 140E and the light-emitting units 120E,
and the light-emitting units 120E are encapsulated onto the
substrate 110E. The reflective layer 140E can block the light
emitted from the side surfaces of the light-emitting units 120E,
and the upper surface 141E of the reflective layer 140E can provide
a large reflective surface, such that the light from the upper
surfaces 120E of the light-emitting units 120E can be emitted in an
efficient manner. Moreover, the phosphor layer 130E can be well
formed on the reflective layer 140E and the light-emitting units
120E. As a result, the semiconductor light-emitting device 100
provided herein is characterized by exceptional light-emitting
quality.
[0083] To sum up, the reflective layer of the semiconductor
light-emitting device provided in an embodiment of the invention
surrounds the light-emitting unit and exposes the phosphor layer on
the upper surface of the light-emitting unit. While the reflective
layer reflects the light emitted from the upper surface of the
light-emitting unit, the reflective layer can simultaneously block
the light emitted from the side surface of the light-emitting unit,
such that the semiconductor light-emitting device is capable of
emitting light with favorable quality. Besides, according to the
manufacturing method of the semiconductor light-emitting device
provided in an embodiment of the invention, when the light-emitting
unit is encapsulated by the phosphor layer and the reflective
layer, the reflective layer surrounds the light-emitting unit and
exposes the phosphor layer adjoining the upper surface of the
light-emitting unit. Thereby, while the reflective layer reflects
the light emitted from the upper surface of the light-emitting
unit, the reflective layer can simultaneously block the light
emitted from the side surface of the light-emitting unit, such that
the semiconductor light-emitting device is capable of emitting
light with favorable quality.
[0084] Although the disclosure has been provided with reference to
the above embodiments, it will be apparent to one of ordinary skill
in the art that modifications to the described embodiments may be
made without departing from the spirit of the disclosure.
Accordingly, the scope of the disclosure will be defined by the
attached claims and not by the above detailed descriptions.
* * * * *