U.S. patent application number 15/674266 was filed with the patent office on 2017-12-21 for damage implantation of a cap layer.
The applicant listed for this patent is TEXAS INSTRUMENTS INCORPORATED. Invention is credited to Wayne Bather, Narendra Singh Mehta, Mahalingam Nandakumar.
Application Number | 20170365715 15/674266 |
Document ID | / |
Family ID | 40161075 |
Filed Date | 2017-12-21 |
United States Patent
Application |
20170365715 |
Kind Code |
A1 |
Nandakumar; Mahalingam ; et
al. |
December 21, 2017 |
Damage Implantation of a Cap Layer
Abstract
A method for fabricating a transistor on a semiconductor wafer
includes providing a partial transistor containing a gate stack,
extension regions, and source/drain sidewalls, The method also
includes performing a source/drain implant of the semiconductor
wafer, forming a cap layer over the semiconductor wafer, and
performing a source/drain anneal. In addition, the method includes
performing a damage implant of the cap layer and removing the cap
layer over the semiconductor wafer.
Inventors: |
Nandakumar; Mahalingam;
(Richardson, TX) ; Bather; Wayne; (Richardson,
TX) ; Mehta; Narendra Singh; (Dallas, TX) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TEXAS INSTRUMENTS INCORPORATED |
DALLAS |
TX |
US |
|
|
Family ID: |
40161075 |
Appl. No.: |
15/674266 |
Filed: |
August 10, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12817829 |
Jun 17, 2010 |
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15674266 |
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11771269 |
Jun 29, 2007 |
8859377 |
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12817829 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 21/823807 20130101;
H01L 21/8238 20130101; H01L 21/31155 20130101; H01L 29/6659
20130101; H01L 21/823814 20130101; H01L 29/7847 20130101 |
International
Class: |
H01L 29/78 20060101
H01L029/78; H01L 21/8238 20060101 H01L021/8238; H01L 29/66 20060101
H01L029/66 |
Claims
1. An integrated circuit comprising: a silicon oxide liner film in
contact with annealed source/drain regions and a gate electrode of
a transistor; and a cap layer comprising silicon and nitrogen in
contact with said silicon oxide liner film; wherein said cap layer
contains an electrically neutral species.
2. integrated circuit of claim 1 wherein said electrically neutral
species comprises Ar.
3. The integrated circuit of claim 1 wherein said electrically
neutral species comprises Sb.
4. The integrated circuit of claim 1 wherein said cap layer also
contains another electrically neutral species.
5. An integrated circuit comprising: a silicon oxide liner film in
contact with annealed source/drain regions and a gate electrode of
a transistor; and a cap layer comprising silicon and carbon in
contact with said silicon oxide liner film; wherein said cap layer
contains an electrically neutral species.
6. The integrated circuit of claim 5 wherein said electrically
neutral species comprises Ar.
7. The integrated circuit of claim 5 wherein said electrically
neutral species comprises Sb.
6. The integrated circuit of claim 5 wherein said cap layer also
contains another electrically neutral species.
9. An integrated circuit comprising: a cap layer comprising silicon
and nitrogen in contact with unannealed source/drain regions and a
gate electrode of a transistor; wherein said cap layer contains an
electrically neutral species.
9. An integrated circuit of claim 9 wherein said electrically
neutral species comprises Ar.
11. An integrated circuit comprising: a cap layer comprising
silicon and carbon in contact with unannealed source/drain regions
and a gate electrode of a transistor; wherein said cap layer
contains an electrically neutral species.
12. The integrated circuit of claim 11 wherein said electrically
neutral species comprises Ar.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This is a division of and claims priority to U.S.
application Ser. No. 12/817,829, filed on Jun. 17, 2017, which is a
division of and claims priority to U.S. application Ser. No.
11/771,269, filed on Jun. 29, 2007, that is now U.S. Pat. No.
8,859,377, granted Oct. 14, 2014, the contents of all are
incorporated herein by reference in its entirety.
BACKGROUND OF THE INVENTION
[0002] This invention relates to the fabrication of a semiconductor
transistor using a cap layer during the source/drain anneal
process.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] FIG. 1 is a cross-sectional view of a semiconductor
structure in accordance with the present invention,
[0004] FIGS. 2A-2E are cross-sectional diagrams of a process for
forming a transistor in accordance with the present invention.
[0005] FIGS. 3A-3E are cross-sectional diagrams of an alternative
process for forming a transistor in accordance with an alternative
embodiment of the present invention,
[0006] FIGS. 4A-4F are cross-sectional diagrams of another
alternative process for forming a transistor in accordance with an
alternative embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0007] The present invention is described with reference to the
attached figures, wherein like reference numerals are used
throughout the figures to designate similar or equivalent elements.
The figures are not drawn to scale and they are provided merely to
illustrate the invention. Several aspects of the invention are
described below with reference to example applications for
illustration. It should be understood that numerous specific
details, relationships, and methods are set forth to provide a full
understanding of the invention. One skilled in the relevant art,
however, will readily recognize that the invention can be practiced
without one or more of the specific details or with other methods.
In other instances, well-known structures or operations are not
shown in detail to avoid obscuring the invention. The present
invention is not limited by the illustrated ordering of acts or
events, as some acts may occur in different orders and/or
concurrently with other acts or events. Furthermore, not all
illustrated acts or events are required to implement a methodology
in accordance with the present invention.
[0008] Referring to the drawings, FIG. 1 is a cross-sectional view
of a portion of a semiconductor wafer 10 in accordance with the
present invention. In the example application, CMOS transistors 60,
70 are formed within a semiconductor substrate 20 having a p-well
30 containing the NMOS transistor 70 and an n-well 40 containing
PMOS transistor 60. The potions of the semiconductor wafer 10 that
are not shown may contain any combination of active and passive
devices, such as additional CMOS, BiCMOS and bipolar junction
transistors--as well as capacitors, optoelectronic devices,
inductors, resistors, and diodes.
[0009] The CMOS transistors 60, 70 are electrically insulated from
other active devices located within the semiconductor wafer 10 (not
shown) by shallow trench isolation structures 50 formed within the
semiconductor substrate 20; however, any conventional isolation
structure may be used such as field oxide regions or implanted
isolation regions. The semiconductor substrate 20 may be a
single-crystalline substrate that is doped with n-type and p-type
dopants; however, it may also be a silicon germanium ("SiGe")
substrate, a silicon-on-insulator ("SOI") substrate, or a
single-crystalline substrate having an epitaxial silicon layer that
is doped with n-type and p-type dopants.
[0010] Transistors, such as CMOS transistors 60, 70, are generally
comprised of a gate, source, and drain. More specifically, as shown
in FIG. 1, the active portion of the CMOS transistors are comprised
of source/drain regions 80, source/drain extension regions 90, a
gate stack that is comprised of a gate dielectric 100 and gate
electrode 110, and a channel region 190 located under the gate
dielectric 100 and near the surface of the substrate.
[0011] The example PMOS transistor 50 is a p-channel MOS
transistor. Therefore it is formed within an n-well region 40 of
the semiconductor substrate 20, In addition, the deep source/drain
regions 80 and the extension regions 90 have p-type dopants, such
as boron. The extension regions 90 may be lightly doped ("LDD"),
medium doped ("MDD"), or highly doped ("HDD"), However,
sources/drain regions 80 are usually heavily doped. The PMOS gate
stack is comprised of a p-type doped polysilicon electrode 110 and
gate oxide dielectric 100. However, it is within the scope of the
invention for the PMOS gate stack to have a metal electrode 110
instead of a polysilicon electrode 110.
[0012] The example NMOS transistor 70 is an n-channel MOS
transistor. Therefore it is formed within a p-well region 30 of the
semiconductor substrate 20. In addition, the deep sources and
drains 80 and the source and drain extensions 90 have n-type
dopants such as arsenic, phosphorous, antimony, or a combination of
n-type dopants. The extension regions 90 may be LDD, MDD, or HDD.
However, sources/drain regions 80 are usually heavily doped. The
NMOS gate stack is comprised of an n-type doped polysilicon
electrode 110 and gate oxide dielectric 100. However, it is within
the scope of the invention for the NMOS gate stack to have a metal
electrode 110 instead of a polysilicon electrode 110.
[0013] The extension regions 90 are formed using the gate stack
100, 110 as a mask in the example embodiment. However, it is within
the scope of the invention to form the extension regions 90 using
the gate stack plus extension sidewalls that are located proximate
the gate stack (not shown) as a mask. An offset structure
comprising source/drain sidewalls 130 is used during fabrication to
enable the proper placement of the source/drain regions 80. More
specifically, the sources/drain regions 80 are formed with the gate
stack and source/drain sidewalls 130 as a mask.
[0014] In the example application shown in FIG. 1, a sacrificial
conformal cap layer 120 (sometimes called a "stress memorization
layer") covers the PMOS and NMOS transistors. The cap layer 120 is
used during the fabrication process to impart (or "memorize")
stress into the gate electrode 110 during the source/drain anneal
process. In the On-state of the transistor, the stress that is
memorized in the poly gate electrode 110 is transferred to the
channel region 190, thereby improving transistor performance by
improving the carrier mobility in the channel region (resulting in
an improved transistor drive current without an increase in leakage
current).
[0015] The cap layer 120 is preferably SiN; however, the cap layer
120 may be comprised of any suitable material such as SiON, SIC,
SiOCN, or SiOC. In addition, the cap layer 120 is preferably
300-6001 .ANG. thick; however, the cap layer may be any suitable
thickness between 50-1000 .ANG.. The cap layer 120 in the example
application is formed by a plasma enhanced chemical vapor
deposition ("PECVD") process (using silane and ammonia precursors);
however, the cap layer 120 may be formed with any suitable process
such as chemical vapor deposition ("CVD") or low pressure chemical
vapor deposition ("LPCVD").
[0016] The cap layer 120 in the example application may be
implanted with an electrically neutral species such as Ar. However,
the cap layer 120 may be implanted with other electrically neutral
species such as Ge, As, and Sb. Moreover, it is within the scope of
the invention for the cap layer to be implanted with any dopant
that causes structural damage to the cap layer 120 but is
un-reactive with the silicon substrate 20, such as Ar. The
sacrificial cap layer 120 is implanted with one or more of these
additional dopants to facilitate an improved etch rate when the cap
layer is removed, as described infra.
[0017] Referring again to the drawings, FIGS. 2A-2E are
cross-sectional views of a partially fabricated semiconductor wafer
10 illustrating a process for forming an example PMOS transistor 60
and NMOS transistor 70 in accordance with the present invention.
The following example application is exemplary but not restrictive
of alternative ways of implementing the principles of the
invention. Moreover, features and procedures whose implementations
are well known to those skilled in the art are omitted for brevity.
For example, the implementation of common fabrication steps lies
within the ability of those skilled in the art and accordingly any
detailed discussion thereof may be omitted.
[0018] FIG. 2A is a cross-sectional view of a semiconductor
substrate 20 containing partial PMOS and NMOS transistors 60, 70
that are formed with any standard manufacturing process. For
example, a gate oxide layer and a gate polysilicon layer are
initially formed over a semiconductor substrate 20 containing
shallow trench isolation structures 50. Then, the gate oxide layer
and the gate polysilicon layer are etched (using a patterned
photoresist mask) to form the gate stacks of the PMOS and NMOS
transistors 60, 70.
[0019] The extension regions 90 may be formed by low-energy ion
implantation, gas phase diffusion, or solid phase diffusion. The
dopants used to create the extension regions 90 for a PMOS
transistor are p-type (i.e. boron). The dopants used to create the
extension regions 90 for an NMOS transistor 70 are n-type (i.e.
phosphorous and arsenic). In the example application, the gate
stack 100, 110 is used as the mask to direct the placement of the
extension regions 90; however, extension sidewalls may be formed
proximate the gate stack 100, 110 and then used as a mask to direct
the placement of the extension regions 90.
[0020] Next, source/drain sidewalls 130 are formed proximate to the
gate stack 100, 110. The example source/drain sidewalls 130 are
comprised of a layer of nitride and a cap oxide; however, it Is
within the scope of the invention to use more layers (i.e. an
L-shaped cap oxide layer, an L-shaped nitride layer, and a final
oxide layer) or less layers (just a silicon oxide layer or just a
silicon nitride layer) to create the source/drain sidewalls 130.
The gate stack 100, 110 and the source/drain sidewalls 110 are used
as a template for the source/drain implant 140 of dopants to form
the source/drain regions 80. The source/drain regions 80 may be
formed by any standard implantation process, such as deep ion
implantation or deep diffusion. The dopants used to create the
source/drain regions 80 for a PMOS transistor are typically boron;
however, other dopants or combinations for dopants may be used, The
dopants used to create the source/drain regions 80 for an NMOS
transistor are typically phosphorous and arsenic; however, other
dopants or combinations for dopants may be used.
[0021] In accordance with the example embodiment, a sacrificial cap
layer 120 is now formed over the semiconductor wafer 10, as shown
in FIG. 2B. The cap layer 120 is preferably SIN; however, the cap
layer 120 may be comprised of any suitable material such as SiON,
SiC, SiOCN, or SiOC, The SIN cap layer 120 may have a thickness
between 200-1000 .ANG. and the thickness is preferably between
300-600 .ANG..
[0022] The cap layer 120 may be formed by any suitable process such
as plasma enhanced chemical vapor deposition ("PECVD") using any
suitable machine such as the Centura (sold by AMAT). In the example
application, the PECVD process 150 uses silane and ammonia
precursors, a pressure of 1-30 Torr, a power level between 50 300
W, and a substrate temperature of 250-450.degree. C..
Alternatively, the cap layer 120 may be formed using another
standard process, such as CVD or LPCVD (including BTBAS).
[0023] The next step in the fabrication process is a standard
source/drain anneal 180, as shown in FIG. 2C. In the example
application, the source/drain regions 80 plus the extension regions
90 are activated by the anneal step 160. This anneal step activates
the dopants and repairs the damage to the semiconductor wafer
caused by the ion implants. The activation anneal may be performed
by any conventional technique such as rapid thermal annealing
("RTA") or spike annealing. However, the anneal 160 is preferably
performed by a millisecond anneal process such as flash lamp
annealing ("FLA") or laser annealing. Moreover, it is within the
scope of the invention to use a combination of conventional and
millisecond anneals for step 160.
[0024] The anneal step 160 causes lateral and vertical migration of
dopants in the sources/drain regions 80 and the extension regions
90. In addition, the anneal step causes the full crystallization of
the ion implant areas 80, 90. If needed, a second anneal (which is
generally similar to the first anneal), or multiple conventional
and millisecond anneals, may be performed to promote
recrystallization and further lateral dopant movement of the ion
implant areas 80, 90.
[0025] The anneal 160 also causes the cap layer 120 to change
stoichiometrically (by physically restructuring of the bonds of the
cap layer 120). For the SiN cap layer 120 of the example
application, hydrogen is released in the anneal process causing the
atomic percent of nitrogen and the atomic percent of silicon to
increase, The result is that the cap layer 120 will have an
increased density (and a reduced thickness). Therefore, the
compositional changes of the cap layer 120 that occur during the
anneal process causes the cap layer 120 to density and transfer its
stresses to the gate electrode 110.
[0026] The change in structure of the cap layer 120 (resulting from
the source/drain anneal 160) generally reduces the etch rate of the
cap layer 120. As a result, it is sometimes difficult to thoroughly
remove the cap layer 120 using standard wafer cleaning processes.
Therefore, in accordance with the example embodiment, the
semiconductor wafer 10 is subjected to a blanket damage implant
process 170 using a standard high current implanter (sold by AMAT
or Varian), as shown in FIG. 2D.
[0027] The damage implant 170 causes the cap layer 120 to be
damaged, thereby increasing the etch rate of the cap layer 120. In
the example application, the cap layer 120 is implanted with an
inert and electrically neutral species such as Ar. However, it is
within the scope of the invention to implant other electrically
neutral species such as Ge, As, or Sb. It is also within the scope
of the invention to implant a combination of species. Moreover, it
is within the scope of the invention to implant any species that
will cause structural damage to the cap layer 120 (and is
preferably un-reactive with the silicon substrate 20).
[0028] Once the damage implant 170 is complete, the cap layer 120
is removed, as shown in FIG. 2E. In the example fabrication
process, the cap layer 120 is removed with a standard etch 180 such
as a wet etch using hot phosphoric acid clean
(H.sub.3PO.sub.4).
[0029] However, other standard cleaning processes may be used, such
as a plasma dry etch (using a mixture of Cl.sub.2/HBr/He/O.sub.2).
It is to be noted that the damage implant 170 caused the etch rate
of the cap layer 120 to be increased; therefore, it is easier to
remove the cap layer 120 with the standard clean process 180.
Moreover, the damage implant 170 may ensure that the standard clean
process 180 thoroughly removes the cap layer 120.
[0030] The fabrication of the semiconductor wafer 10 now continues
with standard process steps until the semiconductor device is
complete. Generally, the next step is the silicidation of the
source/drain regions 80 and gate electrode 110, the formation of
the dielectric insulator layer, and then the formation of the
contacts within the transistor layer of the integrated circuit. The
semiconductor wafer fabrication continues with the completion of
the back-end structure that contains the metal interconnects for
electrically connecting the PMOS transistor 60 and the NMOS
transistor 70 to the remainder of the integrated circuit. Once the
fabrication process is complete, the integrated circuit will be
tested and then packaged.
[0031] FIGS. 3A-3E are cross-sectional views of a first alternative
process for forming an example PMOS transistor 60 and NMOS
transistor 70 in accordance with the present invention.
Specifically, the structures shown in FIGS. 3A-3B are similar to
the structures shown in FIGS. 2A-2B. The source/drain implant (140)
is performed in FIG. 3A and the cap layer 120 is formed (150) in
FIG. 3B. However, in the first alternative embodiment, the damage
implant 170 is performed before the source/drain anneal (160), as
shown in FIG. 3C. The damage implant 170 may be similar to the
damage implant 170 described supra. Therefore, the dopant is
preferably Ar, but any inert or electrically neutral dopant may be
used. However, in the example alternative application, the implant
dosage is increased (in order to obtain the targeted damage to the
cap layer 120) because some of the dopants will be released
(thereby reversing some of the damage to the cap layer 120) during
the subsequent source/drain anneal 160 (of FIG. 3D).
[0032] As shown in FIG. 3D, the source/drain anneal 160 is
performed upon completion of the damage implant 170, The
source/drain anneal 160 is similar to the source/drain anneal 160
described supra; therefore, the cap layer 120 will change
composition, becoming densified and reduced in thickness.
[0033] In the first alternative fabrication process shown in FIG.
3E, the cap layer 120 is removed after the source/drain anneal 160
with a standard etch 180 such as a wet etch using hot phosphoric
acid clean (H.sub.3PO.sub.4). However, other standard cleaning
processes may be used, such as a plasma dry etch (using a mixture
of Cl.sub.2/HBr/He/O.sub.2). It is to be noted that the damage
implant 170 (performed before the source/drain anneal 160) caused
the etch rate of the cap layer 120 to be increased; therefore, it
is easier to remove the cap layer 120 with a standard clean process
180. In addition, the damage implant 170 may ensure that the
standard clean process 180 will thoroughly remove the cap layer
120.
[0034] FIGS. 4A-4F are cross-sectional views of a second
alternative process for forming an example PMOS transistor 60 and
NMOS transistor 70 in accordance with the present invention. The
structures shown in FIGS. 4A-4D are similar to the structures shown
in FIGS. 3A-3D. The source/drain implant (140) is performed in
[0035] FIG. 4A and the cap layer 120 is formed (150) in FIG. 4B. As
shown in FIG. 4C, a first damage implant 170A is performed before
the source/drain anneal (160). The first damage implant 170A may be
similar to the damage implants 170 described supra. Therefore, the
dopant is preferably Ar, but any inert or electrically neutral
dopant may be used. However, in the example alternative
application, the implant dosage is reduced (in order to ultimately
obtain the targeted damage to the cap layer 120) because additional
dopants will be implanted during a second damage implant 170E (as
described infra).
[0036] Upon completion of the damage implant, the source/drain
anneal 160 is performed, as shown in FIG. 4D. The source/drain
anneal 160 is similar to the source/drain anneals 160 described
supra; therefore, the cap layer 120 will change
composition--becoming densified and having a reduced thickness.
[0037] In the second alternative fabrication process shown in FIG,
4E, a second damage implant 170B is performed after the
source/drain anneal 160. The second damage implant 170B may be
similar to the damage implants 170 described supra. Therefore, the
dopant is preferably Ar, but any inert or electrically neutral
dopant may be used. However, it is within the scope of the
invention to use a different dopant for the second damage implant
170B than was used for the first damage implant 170A. In the
example alternative application, the dosage of the second damage
implant 170B is the remaining dosage needed to obtain the targeted
damage to the cap layer 120. In addition, the implant energy for
the second damage implant 170B of the example application is
increased in order to facilitate the implantation of dopants into
the densified cap layer 120. The implant energies and doses for
both implants are optimized to ensure adequate damage to the cap
layer and facilitate its easy removal in subsequent cleaning steps.
It is to be noted that it may be desirable to use a heavier dopant
(such as Sb) for the second damage implant 170B in order to better
penetrate the denser cap layer 120 created by the first damage
implant 170A.
[0038] The cap layer 120 is removed after the second damage implant
170B with a standard etch 180 such as a wet etch using hot
phosphoric acid clean (H.sub.3PO.sub.4), as shown in FIG. 4F.
However, other standard cleaning processes may be used, such as a
plasma dry etch (using a mixture of Cl.sub.2/HBr/He/O.sub.2). It is
to be noted that the damage implants 170A and 170B (performed
before and after the source/drain anneal 160) caused the etch rate
of the cap layer 120 to be increased; therefore, it is easier to
remove the cap layer 120 with a standard clean process 180. In
addition, the damage implants 170A and 170B may ensure that the cap
layer 120 is thoroughly removed with the standard clean process
180.
[0039] Various additional modifications to the invention as
described above are within the scope of the claimed invention. As
an example, the invention may be used during the fabrication of
BiCMOS transistors, diodes, or poly block resistors. Moreover, the
cap layer 120 may contain additional layers such as a silicon oxide
liner film that is formed before the SiN layer (to possibly enhance
the transistor drive current).
[0040] Interfacial layers may be formed between any of the layers
shown. In addition, an anneal process may be performed after any
step in the above-described fabrication process. For example, an
anneal process may be performed after the implantation of the
extension regions 90 but before the implantation of the
source/drain regions 80, When used, the anneal process can improve
the microstructure of materials and thereby improve the quality of
the semiconductor structure.
[0041] While various embodiments of the present invention have been
described above, it should be understood that they have been
presented by way of example only, and not limitation. Numerous
changes to the disclosed embodiments can be made in accordance with
the disclosure herein without departing from the spirit or scope of
the invention, Thus, the breadth and scope of the present invention
should not be limited by any of the above described embodiments.
Rather, the scope of the invention should be defined in accordance
with the following claims and their equivalents.
* * * * *