U.S. patent application number 15/664554 was filed with the patent office on 2017-11-16 for method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system.
The applicant listed for this patent is Entegris, Inc.. Invention is credited to Anthony M. Avila, Robert Kaim, Richard S. Ray, Joseph D. Sweeney.
Application Number | 20170330756 15/664554 |
Document ID | / |
Family ID | 44507609 |
Filed Date | 2017-11-16 |
United States Patent
Application |
20170330756 |
Kind Code |
A1 |
Kaim; Robert ; et
al. |
November 16, 2017 |
METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION
SOURCE IN AN ION IMPLANTATION SYSTEM
Abstract
An ion implantation system and process, in which the performance
and lifetime of the ion source of the ion implantation system are
enhanced, by utilizing isotopically enriched dopant materials, or
by utilizing dopant materials with supplemental gas(es) effective
to provide such enhancement.
Inventors: |
Kaim; Robert; (Brookline,
MA) ; Sweeney; Joseph D.; (New Milford, CT) ;
Avila; Anthony M.; (Austin, TX) ; Ray; Richard
S.; (New Milford, CT) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Entegris, Inc. |
Billerica |
MA |
US |
|
|
Family ID: |
44507609 |
Appl. No.: |
15/664554 |
Filed: |
July 31, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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14691904 |
Apr 21, 2015 |
9754786 |
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15664554 |
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14338132 |
Jul 22, 2014 |
9012874 |
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14691904 |
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13840961 |
Mar 15, 2013 |
8785889 |
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14338132 |
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13567571 |
Aug 6, 2012 |
8399865 |
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13840961 |
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13401527 |
Feb 21, 2012 |
8237134 |
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13567571 |
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PCT/US2011/026388 |
Feb 26, 2011 |
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13401527 |
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61308428 |
Feb 26, 2010 |
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61390715 |
Oct 7, 2010 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01J 2237/022 20130101;
F17C 7/00 20130101; H01L 21/26506 20130101; H01J 2237/304 20130101;
H01L 21/2225 20130101; H01J 37/08 20130101; H01J 37/3002 20130101;
H01J 37/3171 20130101; Y10T 428/13 20150115; Y02E 60/32 20130101;
Y02E 60/321 20130101; H01L 21/223 20130101 |
International
Class: |
H01L 21/22 20060101
H01L021/22; H01J 37/08 20060101 H01J037/08; H01J 37/317 20060101
H01J037/317; H01L 21/265 20060101 H01L021/265; H01L 21/223 20060101
H01L021/223; F17C 7/00 20060101 F17C007/00; H01J 37/30 20060101
H01J037/30 |
Claims
1-21. (canceled)
22. A gas supply for an ion implantation system, comprising: (i) a
first gas storage and dispensing vessel containing a dopant source
gas including a dopant species, the first gas storage and
dispensing vessel in fluid communication with a mixing region of
the ion implantation system via a first dispensing line; and (ii) a
second gas storage and dispensing vessel containing supplemental
gas including xenon gas and hydrogen gas, the second gas storage
and dispensing vessel in fluid communication with the mixing region
of the ion implantation system via a second dispensing line,
wherein the mixing region is adapted for mixing the dopant gas and
the supplemental gas to form a gas mixture for delivery to an ion
source of the ion implantation system.
23. The gas supply of claim 22, wherein the dopant source gas
comprises a boron dopant species.
24. The gas supply of claim 22, wherein the dopant source gas
comprises a germanium dopant species.
25. The gas supply of claim 22, wherein the dopant source gas
comprises a silicon dopant species.
26. The gas supply of claim 22, wherein the dopant species is
isotopically enriched above a natural abundance level in at least
one isotope.
27. The gas supply of claim 22, wherein the dopant gas comprises
boron trifluoride.
28. The gas supply of claim 22, wherein the dopant gas comprises
germanium tetrafluoride.
29. The gas supply of claim 22, wherein the dopant gas comprises
silicon tetrafluoride.
30. The gas supply of claim 22, wherein the dopant source gas or
the supplemental gas further comprises a co-species gas.
31. The gas supply of claim 30, wherein the co-species gas
comprises diborane.
32. The gas supply of claim 30, wherein the co-species gas
comprises germane.
33. The gas supply of claim 30, wherein the co-species gas
comprises silane.
34. The gas supply of claim 22, wherein the first and second gas
storage and dispensing vessels comprise at least one vessel
containing a sorbent medium for adsorption storage and desorption
dispensing of gas.
35. The gas supply of claim 22, wherein the first and second gas
storage and dispensing vessels comprise at least one vessel that is
internally pressure-regulated.
36. The gas supply of claim 22, further comprising a third gas
storage gas storage and dispensing vessel, the third gas storage
and dispensing vessel in fluid communication with the mixing region
of the ion implantation system via a third dispensing line.
37. The gas supply of claim 36, wherein the third gas storage and
dispensing vessel contains a co-species gas.
38. The gas supply of claim 36, wherein the second gas storage and
dispensing vessel contains xenon gas and the third gas storage and
dispensing vessel contains hydrogen gas.
39. A method for enhancing operation of an ion implantation system
comprising: delivering a dopant source gas and a supplement gas
from the gas supply according to claim 1 to a mixing chamber of the
ion implantation system to form a gas mixture; generating ionic
dopant species from the gas mixture at an ion source of the ion
implantation system; and implanting the ionic dopant species in a
substrate.
40. The method of claim 39, further comprising monitoring cathode
bias power during operation of the ion source, and in response to
the monitored cathode bias power, monitoring at least one of the
dopant source gas and the supplemental gas delivered to the mixing
chamber.
41. The method of claim 39, wherein the supplemental gas is
effective in mixture with the dopant gas to improve the lifetime
and performance of the ion source as compared to a corresponding
gas mixture lacking the supplemental gas.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation under 35 USC 120
of U.S. patent application Ser. No. 14/338,132, filed Jul. 22,
2014, in the names of Robert Kaim, et al. for "METHOD AND APPARATUS
FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION
IMPLANTATION SYSTEM, issuing Apr. 21, 2015 as U.S. Pat. No.
9,012,874, which is a continuation under 35 USC 120 of U.S. patent
application Ser. No. 13/840,961, filed Mar. 15, 2013, in the names
of Robert Kaim, et al. for "METHOD AND APPARATUS FOR ENHANCED
LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION
SYSTEM, issued Jul. 22, 2014 as U.S. Pat. No. 8,785,889, which is a
continuation under 35 USC 120 of U.S. patent application Ser. No.
13/567,571, filed Aug. 6, 2012, in the names of Robert Kaim, et al.
for "METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF
ION SOURCE IN AN ION IMPLANTATION SYSTEM," issued Mar. 19, 2013 as
U.S. Pat. No. 8,399,865, which is a continuation under 35 USC 120
of U.S. patent application Ser. No. 13/401,527, filed Feb. 21,
2012, in the names of Robert Kaim, et al. for "METHOD AND APPARATUS
FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION
IMPLANTATION SYSTEM," issued Aug. 7, 2012 as U.S. Pat. No.
8,237,134, which is a continuation under 35 USC 120 of
International Application PCT/US2011/026388, with an international
filing date of Feb. 26, 2011 in the names of Robert Kaim, et al.
for "METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF
ION SOURCE IN AN ION IMPLANTATION SYSTEM," which International
Application claims the benefit of priority under 35 USC 119 of U.S.
Provisional Patent Application No. 61/308,428 filed Feb. 26, 2010
in the names of Robert Kaim, et al. for "METHOD AND APPARATUS FOR
ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION
IMPLANTATION SYSTEM" and the benefit of priority under 35 USC 119
of U.S. Provisional Patent Application No. 61/390,715 filed Oct. 7,
2010 in the names of Robert Kaim, et al. for "METHOD AND APPARATUS
FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION
IMPLANTATION SYSTEM." The disclosures of said U.S. patent
applications, said International Application and said U.S.
Provisional Patent Application Nos. 61/308,428 and 61/390,715 are
hereby incorporated herein by reference, in their respective
entireties, for all purposes.
FIELD
[0002] The present disclosure relates to ion implantation using
dopants and dopant gas mixtures for enhanced lifetime and
performance of an ion source in an ion implantation system.
BACKGROUND
[0003] Ion implantation as practiced in semiconductor manufacturing
involves deposition of a chemical species into a substrate, such as
a microelectronic device wafer, by impingement of energetic ions of
such species on the substrate. In order to generate the ionic
implantation species, the dopant gas, which may for example
comprise a halide or hydride of the dopant species, is subjected to
ionization. This ionization is carried out using an ion source to
generate an ion beam.
[0004] Once generated at the ion source, the ion beam is processed
by extraction, magnetic filtering, acceleration/deceleration,
analyzer magnet processing, collimation, scanning and magnetic
correction to produce the final ion beam that is impinged on the
substrate.
[0005] Various types of ion sources have been developed, including
inductively heated cathode ion sources, Freeman, Bernas, and
various others, but regardless of the specific type of ion source
employed, the ion source must be capable of continuous operation
for extended periods of time, without the occurrence of "glitching"
or other impairment that would necessitate shut-down, maintenance
or repair of the ion source. Accordingly, ion source lifetime is a
critical characteristic of the ion implantation system, as regards
the efficient and cost-effective operation of the system.
[0006] Ion source failures are attributable to various causes,
including accumulation of deposits on cathode surfaces that
negatively affect thermionic emission of ions, resulting in lowered
arc currents, reduced performance and shortened lifetime of the ion
source, as well as deleterious etching reactions from such dopant
gases as germanium tetrafluoride as a result of the generation of
free fluorine in the arc chamber, as well as stripping or
sputtering of cathode material resulting in loss of physical
integrity of the cathode and consequent reduction of performance
and lifetime of the ion source.
[0007] In consequence of the need to avoid ion source failures, and
to maintain the operating efficiency and lifetime of the ion source
at high levels, the art is continually engaged in efforts to
enhance lifetime and performance of ion sources in ion implantation
systems.
SUMMARY
[0008] The present disclosure relates to ion implantation systems
and processes, and to method and apparatus for achieving enhanced
lifetime and performance of ion sources in such systems and
processes.
[0009] In one aspect, the disclosure relates to an ion implantation
process, comprising flowing a dopant composition to an ion source
for generation of ionic dopant species for implantation, wherein
the dopant composition is selected from the group consisting
of:
(i) germanium compounds isotopically enriched to above natural
abundance level of at least one germanium isotope of mass 70, 72,
73, 74 or 76, wherein the isotopically enriched level of said at
least one germanium isotope is greater than 21.2% for mass 70
germanium isotope, greater than 27.3% for mass 72 germanium
isotope, greater than 7.9% for mass 73 germanium isotope, greater
than 37.1% for mass 74 germanium isotope, and greater than 7.4% for
mass 76 germanium isotope, with the proviso that when the dopant
composition consists of germanium tetrafluoride isotopically
enriched in mass 72 germanium isotope, said isotopically enriched
level is greater than 51.6% for the mass 72 germanium isotope; and
(ii) dopant gas formulations comprising a dopant gas and a
supplemental gas, wherein the supplemental gas includes at least
one of a diluent gas and a co-species gas, and wherein at least one
of the dopant gas and, when present, a co-species gas, is
isotopically enriched.
[0010] In another aspect, the disclosure relates to a method of
operating an ion source in an ion implantation process of the type
described above, comprising: sequentially flowing to the ion source
different dopant materials comprised in said dopant
composition;
monitoring cathode bias power during operation of the ion source
during the sequential flow of said different dopant materials to
the ion source; and in response to the monitored cathode bias
power, modulating at least one of said sequentially supplied dopant
compositions, to extend operating lifetime of the ion source,
cathode and/or one or more other components of the ion source.
[0011] A further aspect of the disclosure relates to a method of
improving performance and lifetime of an ion source arranged to
generate ionic doping species for ion implantation from a dopant
feedstock, comprising generating said ionic doping species from a
dopant composition as described above in connection with the ion
implantation process of the disclosure.
[0012] The disclosure relates in another aspect to an ion
implantation system, comprising an ion source and a dopant
composition source arranged for supplying dopant composition to
said ion source, wherein said dopant composition source comprises a
dopant composition as described above in connection with the ion
implantation process of the disclosure.
[0013] Another aspect of the disclosure relates to a dopant
feedstock apparatus, comprising a vessel having interior volume,
and a dopant feedstock in the interior volume, wherein the dopant
feedstock comprises a dopant composition as described above in
connection with the ion implantation process of the disclosure.
[0014] A further aspect of the disclosure relates to a method of
increasing at least one of source life and turbo pump life in an
ion implantation system in which germanium ions are implanted in a
substrate, said method comprising ionizing a germanium-containing
dopant gas in an ionization chamber of said ion implantation
system, wherein said germanium-containing dopant gas comprises a
mixture of germane and one or more of hydrogen, argon, nitrogen,
and helium, wherein said dopant gas optionally is isotopically
enriched in at least one isotopic Ge species
[0015] Yet another aspect of the disclosure relates to a method of
increasing ion source life in an ion implantation system wherein
germanium tetrafluoride is introduced and ionized in said ion
source, said method comprising introducing ammonia with said
germanium tetrafluoride to the ion source, and wherein said
germanium tetrafluoride optionally is isotopically enriched in at
least one Ge isotopic species.
[0016] A further aspect of the disclosure relates to a dopant gas
composition comprising a dopant gas and a supplemental gas, wherein
the supplemental gas includes at least one of a diluent gas and a
co-species gas, and wherein at least one of the dopant gas and,
when present, a co-species gas, is isotopically enriched.
[0017] In another aspect, the disclosure relates to a method of
operating an ion source, comprising:
sequentially flowing different dopant materials to the ion source;
monitoring cathode bias power during operation of the ion source
during the sequential flow of said different dopant materials to
the ion source; and in response to the monitored cathode bias
power, modulating at least one of said sequentially supplied dopant
compositions, to extend operating lifetime of the ion source,
cathode and/or one or more other components of the ion source.
[0018] A still further aspect of the disclosure relates to a method
of operating an ion source, comprising:
flowing dopant material to the ion source; monitoring cathode bias
power during operation of the ion source during the flow of said
dopant material to the ion source; and in response to the monitored
cathode bias power, flowing a cleaning or deposition agent to the
ion source, to extend operating lifetime of the ion source, cathode
and/or one or more other components of the ion source, in relation
to a corresponding ion source lacking said flowing a cleaning or
deposition agent thereto.
[0019] Other aspects, features and embodiments of the disclosure
will be more fully apparent from the ensuing description and
appended claims.
BRIEF DESCRIPTION OF THE DRAWING
[0020] FIG. 1 is a schematic representation of an ion implant
process system according to one aspect of the disclosure.
[0021] FIG. 2 is a schematic representation of an ion implant
process system according to another aspect of the disclosure.
DETAILED DESCRIPTION
[0022] The present disclosure relates to the use of isotopically
enriched dopant and/or supplemental materials for improving the
lifetime (service life) and performance of an ion source of an ion
implantation system.
[0023] As used herein, the singular forms "a", "and", and "the"
include plural referents unless the context clearly dictates
otherwise.
[0024] The disclosure, as variously set out herein in respect of
features, aspects and embodiments thereof, may in particular
implementations be constituted as comprising, consisting, or
consisting essentially of, some or all of such features, aspects
and embodiments, as well as elements and components thereof being
aggregated to constitute various further implementations of the
invention. The disclosure is set out herein in various embodiments,
and with reference to various features and aspects of the
invention. The disclosure contemplates such features, aspects and
embodiments in various permutations and combinations, as being
within the scope of the disclosure. The disclosure may therefore be
specified as comprising, consisting or consisting essentially of,
any of such combinations and permutations of these specific
features, aspects and embodiments, or a selected one or ones
thereof.
[0025] The compounds, compositions, features, steps and methods of
the disclosure may be further specified in particular embodiments
by provisos or limitations excluding specific substituents,
isotopes, moieties, structures, ingredients, characteristics, steps
or conditions, as applicable, in relation to various specifications
and exemplifications thereof set forth herein.
[0026] The ion implantation systems and processes of the present
disclosure as a result of using such isotopically enriched dopant
and/or supplemental materials achieve enhanced ion source lifetime
and performance, in relation to corresponding ion implantation
systems and processes not using such isotopically enriched dopant
and/or supplemental materials.
[0027] As used herein, the term "dopant gas" refers to a gas-phase
material including a dopant species, i.e., the species to be
implanted in the ion implantation substrate, as coordinated or
associated to a non-dopant component, such as a hydride, halide,
organo or other moiety. Examples of dopant gases include germanium
tetrafluoride, germane, boron trifluoride, diborane, silicon
tetrafluoride, silane, phosphine and arsine.
[0028] The term "supplemental gas" as used herein refers to a
diluent gas or a co-species gas.
[0029] A diluent gas is a gas that does not contain the dopant
species and is effective in mixture with the dopant gas to improve
the lifetime and performance of an ion source processing such
diluent gas-containing mixture with the dopant gas, as compared to
the lifetime and performance of a corresponding ion source
processing the dopant gas without the presence of the diluent gas.
Examples of illustrative diluent gases include hydrogen, argon,
fluorine, and xenon.
[0030] A co-species gas is a gas that contains the same dopant
species as the dopant gas, wherein such same dopant species is
coordinated or associated to a non-dopant component that is
different from the non-dopant component of the dopant gas.
[0031] For example, the dopant gas may be germanium tetrafluoride,
and the co-species gas may be germane, GeH.sub.4.
[0032] The disclosure in one aspect relates to an ion implantation
process, comprising flowing a dopant composition to an ion source
for generation of ionic dopant species for implantation, wherein
the dopant composition is selected from the group consisting
of:
(i) germanium compounds isotopically enriched to above natural
abundance level of at least one germanium isotope of mass 70, 72,
73, 74 or 76, wherein the isotopically enriched level of said at
least one germanium isotope is greater than 21.2% for mass 70
germanium isotope, greater than 27.3% for mass 72 germanium
isotope, greater than 7.9% for mass 73 germanium isotope, greater
than 37.1% for mass 74 germanium isotope, and greater than 7.4% for
mass 76 germanium isotope, with the proviso that when the dopant
composition consists of germanium tetrafluoride isotopically
enriched in mass 72 germanium isotope, said isotopically enriched
level is greater than 51.6% for the mass 72 germanium isotope; and
(ii) dopant gas formulations comprising a dopant gas and a
supplemental gas, wherein the supplemental gas includes at least
one of a diluent gas and a co-species gas, and wherein at least one
of the dopant gas and, when present, a co-species gas, is
isotopically enriched.
[0033] In various embodiments of such process, the dopant
composition can be selected from the group consisting of germanium
compounds isotopically enriched to above natural abundance level of
at least one germanium isotope of mass 70, 72, 73, 74 or 76. The
dopant composition can therefore comprise: a germanium compound
isotopically enriched to greater than 21.2% in mass 70 germanium
isotope; a germanium compound isotopically enriched to greater than
27.3% in mass 72 germanium isotope; a germanium compound
isotopically enriched to greater than 51.6% in mass 72 germanium
isotope; a germanium compound isotopically enriched to greater than
7.9% in mass 73 germanium isotope; a germanium compound
isotopically enriched to greater than 37.1% in mass 74 germanium
isotope; or a germanium compound isotopically enriched to greater
than 7.4% in mass 76 germanium isotope.
[0034] The process in other embodiments may be practiced with the
germanium compound comprising at least one of germanium
tetrafluoride and germane. For example, the germanium compound may
comprise germanium tetrafluoride, in which germanium in the
germanium tetrafluoride can have: an isotopically enriched level of
mass 70 germanium isotope that is greater than 21.2%; an
isotopically enriched level of mass 72 germanium isotope that is
greater than 27.3%; an isotopically enriched level of mass 72
germanium isotope that is greater than 51.6%; an isotopically
enriched level of mass 73 germanium isotope that is greater than
7.9%; an isotopically enriched level of mass 74 germanium isotope
that is greater than 37.1%; or an isotopically enriched level of
mass 76 germanium isotope that is greater than 7.4%.
[0035] Still other embodiments of the disclosure can be carried out
in which the dopant composition comprises germane, and the
germanium in the germane has: an isotopically enriched level of
mass 70 germanium isotope that is greater than 21.2%; an
isotopically enriched level of mass 72 germanium isotope that is
greater than 51.6%; an isotopically enriched level of mass 73
germanium isotope that is greater than 7.9%; an isotopically
enriched level of mass 74 germanium isotope that is greater than
37.1%; or an isotopically enriched level of mass 76 germanium
isotope that is greater than 7.4%.
[0036] The ion implantation process broadly described above can be
carried out in other embodiments in which the dopant composition is
selected from the group consisting of dopant gas formulations
comprising a dopant gas and a supplemental gas, wherein the
supplemental gas includes at least one of a diluent gas and a
co-species gas, and wherein at least one of the dopant gas and,
when present, a co-species gas, is isotopically enriched. In
various embodiments, such at least one of the dopant gas and, when
present, the co-species gas, that is isotopically enriched, can be
selected from the group consisting of germanium compounds
isotopically enriched above natural abundance level of at least one
germanium isotope of mass 70, 72, 73, 74 or 76. Illustrative
examples of such isotopically enriched germanium compounds include:
germanium compounds isotopically enriched to greater than 21.2% in
mass 70 germanium isotope; germanium compounds isotopically
enriched to greater than 27.3% in mass 72 germanium isotope;
germanium compounds isotopically enriched to greater than 51.6% in
mass 72 germanium isotope; germanium compounds isotopically
enriched to greater than 7.9% in mass 73 germanium isotope;
germanium compounds isotopically enriched to greater than 37.1% in
mass 74 germanium isotope; and germanium compounds isotopically
enriched to greater than 7.4% in mass 76 germanium isotope.
[0037] In various implementations of the ion implantation process,
the dopant composition can comprise at least one of germanium
tetrafluoride and germane. For example, the dopant composition can
comprise germanium tetrafluoride, in which the germanium has: an
isotopically enriched level of mass 70 germanium isotope that is
greater than 21.2%; an isotopically enriched level of mass 72
germanium isotope that is greater than 27.3%; an isotopically
enriched level of mass 72 germanium isotope that is greater than
51.6%; an isotopically enriched level of mass 73 germanium isotope
that is greater than 7.9%; an isotopically enriched level of mass
74 germanium isotope that is greater than 37.1%; or an isotopically
enriched level of mass 76 germanium isotope that is greater than
7.4%.
[0038] Alternatively, the dopant composition can comprise germane,
in which the germanium has: an isotopically enriched level of mass
70 germanium isotope that is greater than 21.2%; an isotopically
enriched level of mass 72 germanium isotope that is greater than
27.3%; an isotopically enriched level of mass 73 germanium isotope
that is greater than 7.9%; an isotopically enriched level of mass
74 germanium isotope that is greater than 37.1%; or an isotopically
enriched level of mass 76 germanium isotope that is greater than
7.4%.
[0039] In other embodiments of the process, the supplemental gas
may include a diluent gas, e.g., at least one gas species selected
from the group consisting of argon, hydrogen, fluorine and xenon.
Still other embodiments may include a supplemental gas comprising a
co-species gas.
[0040] Yet other embodiments of the process employ a dopant
composition comprising at least one of germanium tetrafluoride,
germane, boron trifluoride, diborane, silicon tetrafluoride and
silane.
[0041] Still other embodiments of the process employ a dopant gas
selected from the group consisting of germanium tetrafluoride,
germane, boron trifluoride, diborane, silicon tetrafluoride and
silane, and a diluent gas comprising at least one diluent gas
species selected from the group consisting of argon, hydrogen,
fluorine, and xenon.
[0042] The dopant composition in other embodiments of the process
includes a dopant gas formulation selected from the group
consisting of:
(i) isotopically enriched germanium tetrafluoride with xenon and
hydrogen; (ii) isotopically enriched germanium tetrafluoride with
germane; (iii) isotopically enriched germanium tetrafluoride and
isotopically enriched germane; (iv) isotopically enriched boron
trifluoride with xenon and hydrogen; (v) isotopically enriched
boron trifluoride with diborane; and (vi) isotopically enriched
boron trifluoride and isotopically enriched diborane.
[0043] In various embodiments of the process, the dopant gas and
co-species gas are flowed in mixture with one another to the ion
source for generation of ionic dopant species for implantation.
Other embodiments of the process are carried out in which the
dopant gas and co-species gas are sequentially flowed to the ion
source for generation of ionic dopant species for implantation.
[0044] In the ion implantation process of the disclosure, the ion
source in one embodiment can be operated according to the following
methodology: flowing sequentially to the ion source different
dopant materials comprised in said dopant composition different
dopant materials comprised in the dopant composition; monitoring
cathode bias power during operation of the ion source during the
sequential flow of the different dopant materials to the ion
source; and in response to the monitored cathode bias power,
modulating at least one of the sequentially supplied dopant
compositions, to extend operating lifetime of the ion source,
cathode and/or one or more other components of the ion source.
[0045] The disclosure in another aspect relates to a method of
improving performance and lifetime of an ion source arranged to
generate ionic doping species for ion implantation from a dopant
feedstock, comprising generating such ionic doping species from any
of the dopant compositions of the present disclosure, as variously
described herein. In one embodiment of such method, a dopant gas
and co-species gas are flowed in mixture with one another to the
ion source for generation of ionic dopant species for implantation.
In another embodiment of such method, a dopant gas and co-species
gas are sequentially flowed to the ion source for generation of
ionic dopant species for implantation.
[0046] A further aspect of the disclosure relates to an ion
implantation system, comprising an ion source and a dopant
composition source arranged for supplying dopant composition to
said ion source, wherein the dopant composition source comprises
any of the dopant compositions as variously described herein. In
such ion implantation system, the dopant composition may comprise
dopant gas and co-species gas, and the dopant composition source
may be arranged to flow the dopant gas and co-species gas in
mixture with one another to said ion source for supplying dopant
composition thereto. Alternatively, the dopant composition source
may be arranged for sequentially flowing dopant gas and co-species
gas to the ion source for supply of dopant composition thereto.
[0047] A still further aspect of the disclosure relates to a dopant
feedstock apparatus, comprising a vessel having interior volume,
and a dopant feedstock in the interior volume, wherein the dopant
feedstock comprises any of the dopant compositions as variously
described herein.
[0048] The disclosure relates in another aspect to a method of
increasing at least one of source life and turbo pump life in an
ion implantation system in which germanium ions are implanted in a
substrate. The method comprises ionizing a germanium-containing
dopant gas in an ionization chamber of the ion implantation system,
wherein the germanium-containing dopant gas comprises a mixture of
germane and one or more of hydrogen, argon, nitrogen, and helium,
wherein the dopant gas optionally is isotopically enriched in at
least one isotopic Ge species.
[0049] For example, germane may be present in such mixture at a
concentration in a range of from 5 to 35 percent volume, based on
the total volume of the mixture.
[0050] The disclosure in a further aspect relates to a method of
increasing ion source life in an ion implantation system wherein
germanium tetrafluoride is introduced and ionized in the ion
source. The method comprises introducing ammonia with the germanium
tetrafluoride to the ion source, and wherein the germanium
tetrafluoride optionally is isotopically enriched in at least one
Ge isotopic species. In such method, the ammonia and germanium
tetrafluoride may be provided in a mixture in a supply vessel from
which the mixture is dispensed for introduction thereof to the ion
source. Alternatively, in such method, the ammonia and germanium
tetrafluoride may be provided in separate supply vessels from which
they are dispensed for introduction thereof to the ion source. As a
still further embodiment, the ammonia and germanium tetrafluoride
may be mixed with one another in the ion source after introduction
thereof to the ion source.
[0051] Another variant of such method involves introducing xenon to
the ion source. The xenon may be introduced in mixture with ammonia
and/or germanium tetrafluoride.
[0052] In another embodiment of such method as broadly described
above, the germanium tetrafluoride may be isotopically enriched in
at least one Ge isotopic species, e.g., at least one Ge isotopic
species comprises germanium isotope selected from the group
consisting of .sup.70Ge, .sup.72Ge and .sup.74Ge.
[0053] A further aspect of the disclosure relates to a dopant gas
composition comprising a dopant gas and a supplemental gas, wherein
the supplemental gas includes at least one of a diluent gas and a
co-species gas, and wherein at least one of the dopant gas and,
when present, a co-species gas, is isotopically enriched. The
composition, wherein at least one of the dopant gas and, when
present, the co-species gas, is isotopically enriched, may be
selected from the group consisting of germanium compounds
isotopically enriched above natural abundance level of at least one
germanium isotope of mass 70, 72, 73, 74 or 76.
[0054] Such compounds may include: a germanium compound
isotopically enriched to greater than 21.2% in mass 70 germanium
isotope; a germanium compound isotopically enriched to greater than
27.3% in mass 72 germanium isotope; a germanium compound
isotopically enriched to greater than 51.6% in mass 72 germanium
isotope; a germanium compound isotopically enriched to greater than
7.9% in mass 73 germanium isotope; a germanium compound
isotopically enriched to greater than 37.1% in mass 74 germanium
isotope; or a germanium compound isotopically enriched to greater
than 7.4% in mass 76 germanium isotope.
[0055] The dopant composition in another embodiment comprises at
least one of germanium tetrafluoride and germane.
[0056] When the composition comprises germanium tetrafluoride, the
germanium in the germanium tetrafluoride may have: an isotopically
enriched level of mass 70 germanium isotope that is greater than
21.2%; an isotopically enriched level of mass 72 germanium isotope
that is greater than 27.3%; an isotopically enriched level of mass
72 germanium isotope that is greater than 51.6%; an isotopically
enriched level of mass 73 germanium isotope that is greater than
7.9%; an isotopically enriched level of mass 74 germanium isotope
that is greater than 37.1%; or an isotopically enriched level of
mass 76 germanium isotope that is greater than 7.4%.
[0057] When the composition comprises germane, the germanium in the
germane may have: an isotopically enriched level of mass 70
germanium isotope that is greater than 21.2%; an isotopically
enriched level of mass 72 germanium isotope that is greater than
27.3%; an isotopically enriched level of mass 73 germanium isotope
that is greater than 7.9%; an isotopically enriched level of mass
74 germanium isotope that is greater than 37.1%; or an isotopically
enriched level of mass 76 germanium isotope that is greater than
7.4%.
[0058] The dopant composition in other embodiments may be
constituted to include a supplemental gas that comprises a
co-species gas, or alternatively a diluent gas, or alternatively,
both a co-species gas and a diluent gas. The diluent gas can
include, for example, at least one gas species selected from the
group consisting of argon, hydrogen, fluorine and xenon.
[0059] The dopant composition in another embodiment can comprise at
least one of germanium tetrafluoride, germane, boron trifluoride,
diborane, silicon tetrafluoride and silane. A further dopant
composition can include dopant gas selected from the group
consisting of germanium tetrafluoride, germane, boron trifluoride,
diborane, silicon tetrafluoride and silane, and diluent gas
comprising at least one diluent gas species selected from the group
consisting of argon, hydrogen, fluorine, and xenon.
[0060] The dopant composition in specific embodiments may comprise
any of:
(i) isotopically enriched germanium tetrafluoride with xenon and
hydrogen; (ii) isotopically enriched germanium tetrafluoride with
germane; (iii) isotopically enriched germanium tetrafluoride and
isotopically enriched germane; (iv) isotopically enriched boron
trifluoride with xenon and hydrogen; (v) isotopically enriched
boron trifluoride with diborane; and (vi) isotopically enriched
boron trifluoride and isotopically enriched diborane.
[0061] Dopant compositions of the disclosure are effective to
improve the lifetime and performance of an implantation process, as
compared to the lifetime and performance of a corresponding process
that does not utilize isotopically enriched dopant gas and
isotopically enriched supplemental gas.
[0062] As used herein, the term "isotopically enriched" or
"enriched" in reference to a dopant gas and/or co-species gas means
that the dopant species in such gas(es) are varied from a naturally
occurring isotopic distribution of the dopant species. By way of
example, a natural abundance isotopic distribution of
concentrations of germanium in a germanium tetrafluoride dopant
gas, and the isotopic distribution of germanium concentrations in
an illustrative isotopically enriched germanium tetrafluoride
dopant gas, are shown in the following Table I.
TABLE-US-00001 TABLE I Isotopic Distributions in Natural and
Isotopically Enriched Germanium Tetrafluoride Concentration (+/-1%)
Isotope Natural Enriched 70 21.2% 15.8% 72 27.3% 51.6% 73 7.9% 9.4%
74 37.1% 20.1% 76 7.4% 3.1%
[0063] The information shown in Table I shows that germanium
isotopes occur at mass 70, 72, 73, 74 and 76, with .sup.74Ge being
the most abundant.
[0064] The present disclosure contemplates ion implantation,
wherein any one or more of such stable isotopes of germanium is
enriched, i.e., increased in concentration above natural abundance
level thereof, in the germanium dopant gas. Thus, the dopant gas in
one embodiment may comprise germanium tetrafluoride, or germane, in
which the germanium is isotopically enriched above natural
abundance levels in at least one isotope. The disclosure in another
embodiment relates to germanium dopant gases in which the dopant
gas is germanium tetrafluoride, and such dopant gas is enriched
above natural abundance level in germanium isotope of mass 70, 72,
73 or 74, with the proviso in various embodiments that when the
germanium isotope enriched above natural abundance level is
.sup.72Ge, e.g., in germanium tetrafluoride, then the enriched
concentration is greater than 51.6%, e.g., with a concentration of
.sup.72Ge that is greater than 52%, 55%, 60%, 70%, 80%, 90%, 99% or
99.99%, in corresponding embodiments. In other embodiments, the
enriched level of .sup.72Ge in a germanium compound in the dopant
composition may be greater than 27.3%.
[0065] By way of specific examples, the isotopically enriched
dopant gas can comprise a dopant selected from the group consisting
of:
(i) germane (GeH.sub.4), isotopically enriched in .sup.70Ge above
21.2%, e.g., with a concentration of .sup.70Ge that is greater than
22%, 25%, 30%, 40%, 50%, 60%, 70%, 80%, 90%, 99% or 99.99%, in
various corresponding embodiments; (ii) germane (GeH.sub.4),
isotopically enriched in .sup.72Ge above 27.3%, e.g., with a
concentration of .sup.72Ge that is greater than 28%, 30%, 40%, 50%,
60%, 70%, 80%, 90%, 99% or 99.99%, in various corresponding
embodiments; (iii) germane (GeH.sub.4), isotopically enriched in
.sup.74Ge above 37.1%, e.g., with a concentration of .sup.74Ge that
is greater than 38%, 40%, 50%, 60%, 70%, 80%, 90%, 99% or 99.99%,
in various corresponding embodiments; (iv) germanium tetrafluoride
(GeF.sub.4), isotopically enriched in .sup.70Ge above 21.2%, e.g.,
with a concentration of .sup.70Ge that is greater than 22%, 25%,
30%, 40%, 50%, 60%, 70%, 80%, 90%, 99% or 99.99%, in various
corresponding embodiments; (v) germanium tetrafluoride (GeF.sub.4),
isotopically enriched in .sup.72Ge above 27.3% in some embodiments,
and above 51.6% in other embodiments, e.g., with a concentration of
.sup.72Ge that is greater than 52%, 55%, 60%, 70%, 80%, 90%, 99% or
99.99%, in various corresponding embodiments; and (vi) germanium
tetrafluoride (GeF.sub.4), isotopically enriched in .sup.74Ge above
37.1%, e.g., with a concentration of .sup.74Ge that is greater than
38%, 40%, 50%, 60%, 70%, 80%, 90%, 99% or 99.99%, in various
corresponding embodiments.
[0066] Considering usage of germanium dopants containing .sup.74Ge,
the use of .sup.74Ge as an implanted germanium species, or the
presence thereof in a dopant composition carries the risk of cross
contamination when such .sup.74Ge-containing dopant is used in an
implanter that also processes arsenic having a mass of 75, since
counter-doping from arsenic residues in Ge implantation can result.
Such counter-doping in turn can render implanted microelectronic
device structures deficient or even useless for their intended
purpose. Thus, the usage of natural abundance germanium dopant gas
challenges the implanter's ability to resolve unwanted species and
produce high current beams of the desired isotope, in instances in
which arsenic is also implanted in other usage of the same
implanter, and can reduce the efficiency of cleaning operations
involving the ion source and beamline.
[0067] In addition to such cross-contamination with .sup.75As, the
presence of .sup.74Ge in ion implantation systems may produce
cross-contamination with corrosion byproducts of BF.sub.3 or
GeF.sub.4 with stainless steel tubing that delivers the dopant gas
to the arc chamber, e.g., FeF. Such issues of cross-contamination
are, however, absent in implanter systems in which arsenic is not
utilized as a dopant, and in which the dopant gas delivery tube to
arc chamber interface uses components of graphite, tungsten or
other suitable materials that eliminate or minimize the generation
of FeF. In such implanter systems, dopant gases containing
.sup.74Ge may be employed without the disadvantages of such
cross-contamination.
[0068] In ion implantation systems in which dopant gases containing
.sup.74Ge can be utilized without adverse effect, the present
disclosure, in one aspect thereof, contemplates the use of
germanium-containing dopant gas enriched in .sup.74Ge beyond
natural abundance, taking advantage of the fact that natural
abundance concentration of .sup.74Ge is higher than other stable
germanium isotopes (.sup.70Ge, .sup.72Ge and .sup.73Ge), as shown
in Table I above. Such higher concentration of .sup.74Ge, relative
to other stable isotopes in natural abundance isotopic
compositions, enables enrichment levels above natural abundance to
be more economically achieved for .sup.74Ge than for other
germanium isotopes having lower natural abundance concentration
that are enriched to a corresponding enrichment level.
Alternatively, from the standpoint of capital equipment and process
costs, the higher natural abundance concentration of .sup.74Ge can
be advantageous to achieve higher enrichment content than is
obtainable at the same cost for other stable germanium isotopes
(.sup.70Ge, .sup.72Ge and .sup.73Ge).
[0069] To address the germanium implantation issues of arsenic
contamination, in ion implantation systems in which arsenic doping
is conducted, the less abundant mass 72 germanium isotope can be
advantageously employed. However, the naturally occurring abundance
of mass 72 germanium isotope in, for example, germanium
tetrafluoride is 27.3%, as compared to 37.1% for mass 74 germanium
isotope (see Table I, above). The use of natural abundance
germanium thus causes a reduction of available beam current,
potential decrease in throughput, and an increase in implantation
cost.
[0070] Accordingly, the use of isotopically enriched mass 72
germanium in germanium tetrafluoride or germane, in accordance with
the present disclosure, achieves significant benefit in increasing
available beam current, increasing throughput and decreasing
implantation cost, in those systems susceptible to
cross-contamination due to the presence of mass 74 germanium in the
dopant composition. For example, the enrichment of mass 72
germanium isotope, e.g., to a level greater than 27.3% in germanium
tetrafluoride or germane is beneficial in correspondingly
increasing beam current which in turn is advantageous in yielding a
corresponding increase in throughput in the ion implantation
system.
[0071] Analogous benefits in increased beam current, throughput,
and overall performance, can be achieved with other isotopically
enriched dopant compositions, such as germanium tetrafluoride, or
germane, isotopically enriched in .sup.70Ge.
[0072] The present disclosure thus broadly contemplates
isotopically enriched dopant gases, and/or isotopically enriched
co-species gases, in which the concentration of a beneficial
isotope is increased in relation to its natural occurrence in such
dopant and/or co-species gases, to such extent as to improve the
performance and lifetime of the ion source in the ion implantation
system, in relation to a corresponding system in which the dopant
and/or co-species gases are not isotopically adjusted from natural
abundance concentration levels. The term "isotopically enriched" is
therefore to be understood as indicating an increased
concentration, relative to natural abundance levels, of the
particular isotopic species considered.
[0073] In various specific embodiments, the beneficial/desired
isotope may be increased, relative to natural abundance
concentration, by the amount of 5, 10, 15, 20, 25, 30, 35, 40, 45,
50, 55, 60 or more percent, above the natural abundance
concentration level of such isotope. In other specific embodiments,
the beneficial/desired isotope may be enriched from the natural
abundance concentration level to a higher concentration level, such
as 10, 20, 30, 40, 50, 60, 70, 80, 90, 99, 99.99 or more percent,
depending on the specific isotopic species involved.
[0074] As used herein, the term "by" in reference to a percentage
increase of an isotope above the natural abundance concentration,
such as in the phrase "increased, relative to natural abundance
concentration, by the amount of . . . " means that the percentage
increase is based on the natural abundance atomic percentage of the
specified isotope in the specified element or compound. Thus, for
example, the phrase "increased, relative to natural abundance
concentration, by the amount of 20 percent, e.g., for .sup.70Ge in
GeF.sub.4, means that the 21.2% atomic percent natural abundance
for .sup.70Ge in GeF.sub.4 is increased by 21.2%.times.1.20=25.4%
of .sup.70Ge in the isotopically enriched GeF.sub.4 compound.
[0075] By contrast, the term "to" in reference to a percentage of
an isotope above the natural abundance concentration, such as in
the phrase "enriched from the natural abundance concentration level
to a higher concentration level of . . . " means that the atomic
percent concentration in the isotopically enriched element or
compound is the numeric value specified. Thus, for example, the
phrase "enriched from the natural abundance concentration level for
.sup.70Ge in GeF.sub.4 to a higher concentration level of 40
percent, means that .sup.70Ge is present in an amount of 40 atomic
% in the isotopically enriched GeF.sub.4. If otherwise specified
than with reference to the terms "by" or "to" in phraseology such
as the foregoing, reference to isotopic concentrations or levels
will be understood to refer to atomic percent concentration of the
isotopically enriched element or compound having the specific
identified numeric value.
[0076] In various embodiments, the beneficial isotope may be
increased to a major portion of the total isotopes in the
composition, i.e., an isotopic concentration greater than 50% in
the composition. For example, the mass 72 germanium isotope in
germanium tetrafluoride and germane in specific embodiments may be
enriched to >52% and >27.3%, respectively. In other specific
embodiments, the mass 70 germanium isotope in germanium
tetrafluoride or germane may be enriched to >21.2%.
[0077] Accordingly, germanium tetrafluoride enriched in mass 72
germanium isotope may be advantageously enriched to levels of from
at least 52% up to 100%, or to enrichment levels in other specified
ranges, such as from 55% to 100%, from 60% to 90%, from 75 to 95%,
from 80 to 100% or other permutations of such ranges including one
of such lower limits and another of such upper limits, in which a
desired level of increase in beam current, enhancement in
throughput and/or improved economic character of the implantation
operation is achieved. Germane enriched in mass 72 germanium
isotope may be advantageously enriched to levels of from above
27.3% up to 100%, or to enrichment levels in other specified
ranges, such as from 30% to 100%, from 35% to 85%, from 40% to 60%,
from 50% to 99%, from 75-95%, or other permutations of such ranges
including one of such lower limits and another of such upper
limits, in which the desired improvement in the aforementioned
process characteristics of beam current, throughput and cost is
achieved.
[0078] Correspondingly, germanium tetrafluoride enriched in mass 70
germanium isotope may be advantageously enriched to levels of from
greater than 21.2% to 100% or to enrichment levels in other
specified ranges, such as from 45% to 100%, from 50% to 99%, from
60% to 85%, from 75% to 98%, or other permutations of such ranges
including one of such lower limits and another of such upper
limits, achieving the desired level of enhancement in beam current,
throughput and cost. Corresponding use of germane enriched in mass
70 germanium isotope may be employed, wherein the enrichment of
.sup.70Ge is to levels of from greater than 21.2% to 100%, or to
enrichment levels in other ranges, such as from 25% to 100%, from
30% to 99%, from 40% to 95%, from 50% to 90%, from 75% to 95%, from
80% to 99%, or other permutations of such ranges including one of
such lower limits and another of such upper limits, as may be
appropriate to the specific ion implantation operation and
apparatus in which the isotopically enriched dopant gas is
used.
[0079] The present disclosure therefore contemplates the
achievement of improved lifetime and performance of an ion source
in an ion implantation system, by using dopant gases and/or
supplemental gases that have been isotopically enriched to levels
heretofore unknown in ion implantation. The dopant gas may be
isotopically enriched beyond natural abundance, or the co-species
gas when present may be isotopically enriched beyond natural
abundance, or both the dopant gas and the co-species gas may be
isotopically enriched beyond natural abundance. All combinations of
isotopic enrichment beyond natural abundance, involving dopant
gases, co-species gases, and diluent gases, are contemplated as
being within the scope of the present disclosure.
[0080] Examples of dopant gas mixtures that may be usefully
employed in the practice of the present disclosure to improve
lifetime and performance of an ion source include, without
limitation, dopant gas compositions comprising:
(1) isotopically enriched germanium tetrafluoride, in combination
with xenon and hydrogen as diluent gases; (2) isotopically enriched
germanium tetrafluoride, in combination with germane as a
co-species gas; (3) isotopically enriched germanium tetrafluoride
in combination with isotopically enriched germane as a co-species
gas; (4) isotopically enriched boron trifluoride, in combination
with xenon and hydrogen as diluent gases; (5) isotopically enriched
boron trifluoride, in combination with diborane as a co-species
gas; or (6) isotopically enriched boron trifluoride, in combination
with isotopically enriched diborane as a co-species gas.
[0081] In one specific embodiment, the dopant gas mixture includes
atomic mass 72 germanium having concentration of more than 55%,
e.g., more than 60%, 70%, 80%, or 90%, based on the total isotopic
species of germanium that are present, to provide a high level of
beam current, improving both throughput and source life.
[0082] In another specific embodiment, wherein the dopant gas
mixture does not comprise germanium tetrafluoride, the dopant gas
mixture includes atomic mass 72 germanium having concentration of
more than 25%, e.g., more than 30%, 40%, 50%, 60%, 70%, 80%, or
90%, based on the total isotopic species of germanium that are
present, to provide a high level of beam current, improving both
throughput and source life.
[0083] In still another specific embodiment, the dopant gas mixture
includes atomic mass 70 germanium having concentration of more than
25%, e.g., more than 30%, 40%, 50%, 60%, 70%, 80%, or 90%, based on
the total isotopic species of germanium that are present, to
provide high levels of beam current, and corresponding increases in
throughput and source life.
[0084] Dopant gas compositions in specific embodiments of the
disclosure can comprise a germanium-containing dopant gas and
optionally a supplemental gas, wherein the supplemental gas
includes at least one of a diluent gas and a co-species gas, and
the dopant gas composition is isotopically enriched in at least one
Ge isotopic species. Such compositions may in specific embodiments
include isotopically enriched germane, or alternatively
isotopically enriched germanium tetrafluoride, or alternatively
both isotopically enriched germane and germanium tetrafluoride, or
alternatively both germane and germanium tetrafluoride wherein only
one of such germanium-containing components is isotopically
enriched. In other embodiments, when germanium tetrafluoride is
present in an isotopically enriched form, the dopant gas
composition may include germanium tetrafluoride isotopically
enriched in germanium of mass 70, 72, 73, 74 or 76. Other
embodiments may include germanium tetrafluoride isotopically
enriched in germanium of mass 70, 73 or 74. Still other embodiments
may include germanium tetrafluoride isotopically enriched in
germanium of mass 70, 72 or 74. In some embodiments, when germanium
of mass 72 is present in germanium tetrafluoride, the isotopic
enrichment of such mass 72 isotope may be greater than 51.6%, e.g.,
greater than 52%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99%,
99.9% or 99.99% in specific implementations, and isotopic
enrichment from any of such numeric values of to 100% is
contemplated within the broad scope of the present disclosure.
[0085] Dopant gas compositions in other embodiments may include a
germanium-containing component, such as germane and/or germanium
tetrafluoride, in mixture with one or more of argon, helium,
hydrogen, nitrogen, ammonia and xenon, wherein the
germanium-containing component optionally is isotopically enriched,
e.g., in germanium of mass 70, 72, 73, 74 or 76. In one embodiment,
the dopant gas composition includes germanium tetrafluoride and
ammonia, wherein the germanium tetrafluoride is isotopically
enriched, e.g. in germanium of mass 70, 72, 73, 74 or 76, and in
another embodiment, wherein the germanium tetrafluoride is
isotopically enriched in germanium of mass 72, the isotopic
enrichment of such mass 72 isotope may be greater than 51.6%, e.g.,
greater than 52%, 55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99%,
99.9% or 99.99% in specific implementations, and isotopic
enrichment from any of such numeric values of to 100% is
contemplated within the broad scope of the present disclosure.
[0086] In one illustrative embodiment, the disclosure relates to an
ion implantation process, wherein a dopant gas mixture comprising a
dopant gas and optionally a supplemental gas is provided to an ion
source for generation of ionic dopant species for implantation,
wherein the supplemental gas includes at least one of a diluent gas
and a co-species gas, and wherein at least one of the dopant gas
and, when present, the supplemental gas, includes an isotopically
enriched component.
[0087] In another embodiment, the disclosure relates to improving
performance and lifetime of an ion source arranged to generate
ionic doping species for ion implantation from a dopant gas,
comprising using a dopant gas mixture comprising a dopant gas and
optionally a supplemental gas, wherein the supplemental gas
includes at least one of a diluent gas and a co-species gas, and
wherein at least one of the dopant gas and, when present, the
supplemental gas, includes an isotopically enriched component.
[0088] A further embodiment of the invention relates to an ion
implantation system, comprising a dopant gas source and an optional
supplemental gas source, wherein each of the gas sources is
arranged for dispensing respective dopant gas and supplemental gas
to a mixing locus in the system adapted for mixing of the dopant
gas and supplemental gas to form a dopant gas mixture, and an ion
source constituting the mixing locus or arranged to receive the
dopant gas mixture from the mixing locus, wherein the supplemental
gas includes at least one of a diluent gas and a co-species gas,
and wherein at least one of the dopant gas and, when present, the
supplemental gas includes an isotopically enriched component. Thus,
the dopant gas mixture can comprise a dopant gas and a supplemental
gas, wherein both the dopant gas and the supplemental gas include
an isotopically enriched component (e.g., beneficial/desired
isotope), or the dopant gas and the supplemental gas can both be
isotopically enriched in different isotopic components.
[0089] Additional embodiments of the disclosure relate to use of
isotopic mass 70 germanium dopant gas and/or co-species gas usage
in ion implantation, wherein the dopant gas and/or co-species gas
is isotopically enriched in atomic mass 70 germanium beyond natural
abundance level, e.g., a level of at least 30%, 35%, 40%, 45%, 50%,
55%, 60%, 65%, 70%, 75%, 80%, 85%, 90%, 95%, 99%, 99.5%, 99.99%, or
other level appropriate to the specific ion implantation
application employed.
[0090] An additional embodiment of the disclosure relates to
utilization of a dopant gas reagent including a dopant gas and a
co-species, wherein the gas may be of a composition as described
herein, including isotopically enriched dopant gas and/or
co-species gas components.
[0091] In a further embodiment, the dopant reagent including the
dopant gas and co-species gas is arranged in the ion implantation
system to be flowed to the ion source for supply thereof, wherein
the dopant gas and the co-species gas are in mixture with one
another.
[0092] In a further embodiment, the dopant gas and the co-species
gas are sequentially flowed to the ion source for ionization
therein. Such sequential operation may be conducted in any suitable
manner, utilizing equal time-based flows of the respective dopant
gas and co-species gas, or alternatively, the respective time-based
flows may be different in respect of each other, or otherwise
modulated to provide a doped substrate of desired character.
[0093] The substrate that is ion implanted with ionic species in
accordance with the present disclosure, may be of any suitable
type.
[0094] The substrate may be silicon, silicon carbide, gallium
nitride, or any other suitable substrate composition. Substrates
may include microelectronic device substrates, i.e., substrates
utilized to prepare microelectronic structures for manufacturing of
microelectronic devices or device precursor components.
[0095] In other embodiments, the substrate may be implanted for
manufacturer of products such as displays and solar panels. It will
be recognized that the disclosure is applicable to ion implantation
applications of any suitable character.
[0096] In one embodiment, the present disclosure relates to a
dopant composition supply apparatus including a vessel having an
interior volume and a dopant composition in the interior volume,
wherein the dopant composition may be of any suitable type as
described. Such dopant composition supply apparatus may be arranged
for coupling with an ion source, e.g., by means of suitable flow
circuitry containing appropriate instrumentation and control
components for effecting appropriate flow of dopant composition to
the ion source.
[0097] Referring now to the drawings, FIG. 1 is a schematic
representation of an ion implant process system according to one
aspect of the disclosure.
[0098] The ion implant process system 300 includes a storage and
dispensing vessel 302 containing having an interior volume holding
a dopant gas that is supplied for ion implantation doping of a
substrate 328 in the illustrated ion implant chamber 301. The
storage and dispensing vessel may be of a type containing a sorbent
medium on which the dopant gas is physically adsorbed for storage
of the gas, with the gas being desorbed from the sorbent medium,
under dispensing conditions, for discharge from the vessel. The
sorbent medium may be a solid-phase carbon adsorbent material.
Sorbent-based vessels of such type are commercially available from
ATMI, Inc. (Danbury, Conn., USA) under the trademarks SDS and SAGE.
Alternatively, the vessel may be of an internally
pressure-regulated type, containing one or more pressure regulators
in the interior volume of the vessel. Such pressure-regulated
vessels are commercially available from ATMI, Inc. (Danbury, Conn.,
USA) under the trademark VAC. As a still further alternative, the
vessel may contain the dopant source material in a solid form that
is volatilized, e.g., by heating of the vessel and/or its contents,
to generate the dopant gas as a vaporization or sublimation
product. Solid delivery vessels of such type are commercially
available from ATMI, Inc. (Danbury, Conn., USA) under the trademark
ProEvap.
[0099] In FIG. 1, the storage and dispensing vessel 302 comprises a
cylindrical vessel wall 304 enclosing an interior volume holding
the dopant gas in an adsorbed state, a free gas state, or a
liquefied gas state.
[0100] The storage and dispensing vessel 302 includes a valve head
308 coupled in gas flow communication via a dispensing line 372
with a mixing chamber 360 (which is optional), joined in turn to
discharge line 312. A pressure sensor 310 may be disposed in the
line 312, together with a mass flow controller 314; other optional
monitoring and sensing components may be coupled with the line, and
interfaced with control means such as actuators, feedback and
computer control systems, cycle timers, etc.
[0101] The mixing chamber 360 also if used may be joined in flow
communication with gas feed line 370, to which are coupled
supplemental gas supply vessels 362 and 364, each of which may be
of a same or different type relative to one another, and which may
be of a same or different type in relation to vessel 302 above
described. Vessel 362 may for example contain a diluent gas, and
vessel 364 may for example contain a co-species gas, arranged so
that dopant gas mixtures can be prepared, containing the dopant gas
in combination with the diluent gas and/or the co-species gas.
[0102] Supplemental vessel 362 is formed with a main container
portion to which is secured a valve head 380 that is in turn
coupled with supplemental vessel feed line 366. In like manner,
supplemental vessel 364 is formed with a main container portion to
which is secured valve head 382. Valve head 382 is coupled to
supplemental vessel feed line 368. Feed lines 366 and 368 by such
arrangement deliver diluent and/or co-species gas(es) to the mixing
chamber 360, to provide a dopant gas mixture containing diluent
and/or co-species gas(es), for passage to the ion source of the
implanter. For such purpose, the supplemental vessel feed lines 366
and 368, and dispensing line 372 may be equipped with suitable
valves, controllers and/or sensors for manually or automatically
controlling the flow or other characteristics of the materials
dispensed from the vessels and such valves, controllers and/or
sensors can be coupled with or connected to the corresponding
feed/dispensing lines in any suitable manner.
[0103] Such valves may in turn be coupled with valve actuators
operatively linked to a central processor unit (CPU). The CPU may
be coupled in signal communication relationship with the
aforementioned controllers and/or sensors, and programmably
arranged to control the rates, conditions and amounts of fluids
dispensed from each of the vessels in relation to each other, so
that the dopant gas mixture flowed from the mixing chamber 360 in
line 312 has a desired composition, temperature, pressure and flow
rate for carrying out the ion implantation operation.
[0104] In the illustrated system 300, the ion implant chamber 301
contains an ion source 316 receiving the dispensed dopant gas
mixture from line 312 and generates an ion beam 305. The ion beam
305 passes through the mass analyzer unit 322 which selects the
ions needed and rejects the non-selected ions.
[0105] The selected ions pass through the acceleration electrode
array 324 and then the deflection electrodes 326. The resulting
focused ion beam is impinged on the substrate element 328 disposed
on the rotatable holder 330 mounted on spindle 332. The ion beam of
dopant ions is used to dope the substrate as desired to form a
doped structure.
[0106] The respective sections of the ion implant chamber 301 are
exhausted through lines 318, 340 and 344 by means of pumps 320, 342
and 346, respectively.
[0107] FIG. 2. is a schematic representation of an ion implant
process system according to another aspect of the disclosure. The
FIG. 2 system is numbered correspondingly with respect to the same
components and features of FIG. 1 but the FIG. 2 system utilizes
the respective dopant gas and supplemental gas vessels in a flow
circuitry arrangement wherein each of the vessels 304, 362 and 364
has a separate mass flow controller 314, 400 and 402, respectively,
in its dispensing line. By this arrangement, the flow of gas from
each of the respective vessels is modulated by a dedicated mass
flow controller in the associated dispensing line, to achieve
selected flow rates or flow rate ratios of the respective gases in
operation. The respective mass flow controllers may be operatively
linked with a central processor unit (CPU) by which the respective
mass flow controllers can be adjusted in operation as necessary or
desirable to achieve optimal operation of the system.
[0108] In a further aspect of the present disclosure, the dopant
gas may be supplied in the first instance in a mixture containing
one or more supplemental gas(es), i.e., a diluent and/or co-species
gas, in which the mixture of dopant gas and supplemental gas is
contained in a single supply vessel, from which the gas mixture can
be dispensed and flowed to the ion source of the ion implantation
system. For example, in the FIG. 1 system, the vessel 302 can
constitute a single gas supply vessel (with supplemental vessels
362 and 364 being absent) containing the dopant gas and
supplemental gas mixture.
[0109] Such approach may be utilized to provide germane as a dopant
gas in a mixture comprising hydrogen, an inert gas or other diluent
gas, as a co-packaged mixture that can be provided from a single
supply vessel. This is a safer packaging technique as compared to
high pressure 100% germane, and enables germane to be used as an
alternative to germanium tetrafluoride, since germanium
tetrafluoride can in some ion implant applications cause problems
with respect to source life and turbo pump life that are avoided by
the use of germane.
[0110] As an illustrative example of germane gas mixtures that can
be advantageously used in the broad practice of the present
disclosure, as provided in a single supply vessel, the
germane-containing gas composition can comprise from 5 to 35 volume
% germane, based on the total volume of the composition, or other
suitable concentration of germane, with the balance being one or
more of hydrogen, argon, nitrogen, and helium, wherein the germane
is either natural abundance germane, or germane that is
isotopically enriched in .sup.70Ge or .sup.72Ge or other germanium
isotope, or wherein the dopant gas mixture containing germane is
optionally otherwise isotopically enriched in at least one Ge
isotopic species.
[0111] In another aspect, the present disclosure relates to use of
ammonia as a co-flow gas with germanium tetrafluoride, to increase
source life in ion implantation systems in which germanium
tetrafluoride is used as a dopant gas, and wherein the germanium
tetrafluoride optionally may be isotopically enriched in at least
one Ge isotopic species. By using ammonia as a supplemental gas in
mixture with germanium tetrafluoride when implanting germanium, the
nitrogen and hydrogen constituents of ammonia (NH.sub.3) will
effectively scavenge fluorine from the germanium tetrafluoride. As
a result of such fluorine scavenging, the GeF.sub.4/NH.sub.3
mixture will at least partially inhibit the halogen cycle within
the ion source that results in poor source life due to tungsten
whiskers growing on the arc slit and/or tungsten depositing on the
cathode and/or anticathode.
[0112] Such usage of ammonia as a co-flow gas with GeF.sub.4 can be
effected in any of a variety of arrangements. In one embodiment,
separate gas supply vessels for ammonia and germanium tetrafluoride
are employed, and the gases from the respective gas supply vessels
are co-flowed to the ion source. The co-flowed gases may be mixed
prior to passage through a mass flow controller, or mixed between a
mass flow controller and the ion source, or mixed within the ion
source.
[0113] Alternatively, a single supply vessel containing a mixture
of ammonia and germanium tetrafluoride, in any suitable relative
proportions, can be provided.
[0114] As a further alternative, xenon can be provided as a
supplemental gas in a separate supply vessel. After being dispensed
from the supply vessel, the xenon can be mixed with ammonia and/or
germanium tetrafluoride. Xenon can also be provided as a
supplemental gas in a gas vessel containing xenon mixed with
ammonia and/or germanium tetrafluoride. The presence of xenon in
the gas introduced to the ion source improves source life by the
sputtering effect of the xenon on the cathode, to remove any excess
tungsten that deposits on such cathode.
[0115] The disclosure in yet another aspect relates to an improved
ion implantation process that comprises, consists essentially of,
or consists of flowing one or more isotopically enriched dopant
material, such as for example germane or germanium tetrafluoride,
into an ionizing chamber to generate ionic dopant species,
extracting the ionic dopant species from the ionizing chamber,
selecting a predetermined ionic dopant species and implanting the
selected/desired ionic dopant species into a microelectronic or
semiconductor substrate.
[0116] In various embodiments, the beneficial/desired isotope may
be increased, relative to natural abundance concentration, by an
amount of 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60 or more
percent above the natural abundance concentration level of such
isotope, or the beneficial/desired isotope may be enriched from the
natural abundance concentration level to a higher concentration
level such as 10, 20, 30, 40, 50, 60, 70, 80, 90 or more percent,
depending on the natural abundance level of the specific isotopic
species involved. The enrichment of a desired germanium isotope is
provided to increase the abundance or concentration of such isotope
and correspondingly increase the quantity of the isotope in the ion
beam. This in turn yields a corresponding advantage in throughput
as compared with systems and/or processes that utilize a germanium
source containing a lower concentration/amount of the same/desired
germanium isotope.
[0117] In one preferred embodiment, a germanium tetrafluoride gas
containing .gtoreq.52% atomic mass 72 germanium isotope, a germane
gas containing >27.3% atomic mass 72 germanium isotope, or a
mixture of both gases is used as the dopant material. In another
preferred embodiment, a germanium tetrafluoride gas containing
.gtoreq.21.2% atomic mass 70 germanium isotope, a germane gas
containing >21.2% atomic mass 70 germanium isotope, or a mixture
of both gases is used as the dopant material.
[0118] In dopant gas compositions comprising a germanium-containing
dopant gas and optionally a supplemental gas, wherein the
supplemental gas includes at least one of the diluent gas and a
co-species gas, and the dopant gas composition is isotopically
enriched in at least one Ge isotopic species, the composition may
comprise at least one of germane and germanium tetrafluoride, in
which either or both of such components is isotopically enriched,
e.g., in germanium of mass 70, 72, 73, 74 or 76, or alternatively
in germanium of mass 70, 72 or 74. In such composition, when
germanium tetrafluoride is present and is isotopically enriched in
germanium of mass 72, the isotopic enrichment level may be greater
than 51.6%. The dopant gas composition may include a supplemental
gas of any suitable character.
[0119] Dopant gas compositions are contemplated that comprise a
germanium-containing component and one or more of argon, helium,
hydrogen, nitrogen, ammonia and xenon, wherein the
germanium-containing component optionally is isotopically enriched.
The germanium-containing component in specific embodiments may
comprise germane and/or germanium tetrafluoride. The dopant gas
composition in a specific embodiment may comprise ammonia. In other
embodiments, the composition may for example consist of germanium
tetrafluoride and ammonia, in which the germanium tetrafluoride is
isotopically enriched. Alternatively, the composition may comprise
isotopically enriched germanium tetrafluoride and at least one of
ammonia and xenon.
[0120] A further aspect of the disclosure relates to sequential
flow of dopant materials, in which cathode bias power is monitored
during operation of the ion source and the monitored cathode biased
source power is utilized in a feedback control process for
controlling/selecting/alternating between respective ones of the
dopant compounds delivered to the ion source, in order to extend
the operating lifetime of the ion source or its components, e.g.,
by maintaining a predetermined cathode bias power in the operation
of the ion source. Such method can be utilized to repair or
remediate the cathode of the ion source, i.e., to effect regrowth
or etching of the cathode, as required to maintain or otherwise
achieve a predetermined cathode bias power in the operation of the
ion source.
[0121] The ion source may be of any suitable type in such monitored
and controlled process, e.g., an indirect hot cathode (IHC) ion
source. Cathode bias power in such method is advantageously used as
a feedback mechanism to control sequential flow of different dopant
compounds to extend the operating lifetime of the ion
source/cathode.
[0122] The different dopant compounds may be, and preferably are,
dopant compounds for the same dopant species, e.g., germanium
tetrafluoride and germane as dopant compounds for the dopant
species germanium. Such different dopant source compounds may
include at least one that is isotopically enriched, as variously
described herein.
[0123] This method of operating an ion implantation system
including a cathode in an arc chamber of an ion source, to maintain
operating efficiency of the ion source, in one embodiment includes
contacting the cathode with sequentially supplied dopant
compositions, while measuring cathode bias power, and in response
to the measured cathode bias power, modulating at least one of said
sequentially supplied dopant compositions, to extend operating
lifetime of the ion source, cathode and/or one or more other
components of the ion source.
[0124] The term "modulating" in reference to the sequentially
supplied dopant compositions, means that the sequence, duration,
process conditions, or dopant composition selection for at least
one of the sequentially supplied dopant compositions is controlled,
i.e., selectively varied, in response to the measured cathode bias
power. Thus, the supply periods for each of the dopant compositions
may be varied in relation to one another, to maintain a set point
cathode bias power value, or one dopant composition may be supplied
at higher voltage conditions than another, or the feedback
monitoring and control system may be arranged to otherwise
control/select/alternate between the respective dopant
compositions.
[0125] In another embodiment, the method may be utilized to flow
concurrently or sequentially a cleaning agent or a deposition agent
through the ion source, in relation to one or more dopant
compositions, wherein the cathode bias power or other power
utilization variable of the ion source is utilized to effect
etching of the cathode to remove deposits therefrom, e.g., if the
monitored power usage increases above an initial or other
predetermined or setpoint value or level, by flowing and etch
cleaning agent through the ion source, and/or wherein the cathode
bias power or other power utilization variable of the ion source is
utilized to effect regrowth of cathode material by flow of a
deposition agent therefor through the ion source, if the monitored
power usage decreases below an initial or other predetermined or
setpoint value.
[0126] It will therefore be appreciated that the compositions,
processes, methods, apparatus and systems of the disclosure are
susceptible to implementation and application in a wide variety of
manners, to provide corresponding improvements in performance and
lifetime of an ion source in an ion implantation system.
[0127] While the disclosure has been has been set out herein in
reference to specific aspects, features and illustrative
embodiments, it will be appreciated that the utility of the
disclosure is not thus limited, but rather extends to and
encompasses numerous other variations, modifications and
alternative embodiments, as will suggest themselves to those of
ordinary skill in the field of the present invention, based on the
description herein. Correspondingly, the invention as hereinafter
claimed is intended to be broadly construed and interpreted, as
including all such variations, modifications and alternative
embodiments, within its spirit and scope.
* * * * *