U.S. patent application number 15/094716 was filed with the patent office on 2017-10-12 for shielded probe systems with controlled testing environments.
The applicant listed for this patent is Cascade Microtech, Inc.. Invention is credited to Walter Matthias Clauss, Swen Schmiedchen, Karsten Stoll, Michael Teich.
Application Number | 20170292974 15/094716 |
Document ID | / |
Family ID | 59981479 |
Filed Date | 2017-10-12 |
United States Patent
Application |
20170292974 |
Kind Code |
A1 |
Teich; Michael ; et
al. |
October 12, 2017 |
SHIELDED PROBE SYSTEMS WITH CONTROLLED TESTING ENVIRONMENTS
Abstract
Shielded probe systems are disclosed herein. The shielded probe
systems are configured to test a device under test (DUT) and
include an enclosure that defines an enclosure volume, a
translation stage with a stage surface, a substrate-supporting
stack extending from the stage surface, an electrically conductive
shielding structure, an isolation structure, and a thermal
shielding structure. The substrate-supporting stack includes an
electrically conductive support surface and a
temperature-controlled chuck. The electrically conductive shielding
structure defines a shielded volume. The isolation structure
electrically isolates the electrically conductive shielding
structure from the enclosure and from the translation stage. The
thermal shielding structure extends within the enclosure volume and
at least partially between the enclosure and the
substrate-supporting stack.
Inventors: |
Teich; Michael; (Moritzburg,
DE) ; Stoll; Karsten; (Sohland an der Spree, DE)
; Clauss; Walter Matthias; (Radeberg, DE) ;
Schmiedchen; Swen; (Dresden, DE) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Cascade Microtech, Inc. |
Beaverton |
OR |
US |
|
|
Family ID: |
59981479 |
Appl. No.: |
15/094716 |
Filed: |
April 8, 2016 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
G01R 1/07392 20130101;
G01R 1/07378 20130101; G01R 1/18 20130101; G01R 1/06711 20130101;
G01N 31/02 20130101; G01N 27/42 20130101; G01R 1/44 20130101 |
International
Class: |
G01R 1/18 20060101
G01R001/18; G01R 1/44 20060101 G01R001/44; G01R 1/067 20060101
G01R001/067 |
Claims
1. A shielded probe system for testing a device under test (DUT),
the probe system comprising: an enclosure defining an enclosure
volume; a translation stage including a stage surface that extends
within the enclosure volume; a substrate-supporting stack extending
from the stage surface and within the enclosure volume, wherein the
substrate-supporting stack includes an electrically conductive
support surface, which is configured to support a substrate that
includes the DUT, and a temperature-controlled chuck, which is
configured to regulate a temperature of the electrically conductive
support surface; an electrically conductive shielding structure
extending within the enclosure volume and defining a shielded
volume that contains the electrically conductive support surface,
wherein the shielded volume is a subset of the enclosure volume,
and further wherein the electrically conductive shielding structure
extends between the electrically conductive support surface and the
enclosure, the translation stage, and the temperature-controlled
chuck; an isolation structure that electrically isolates the
electrically conductive shielding structure from the enclosure and
from the translation stage; and a thermal shielding structure
extending within the enclosure volume and at least partially
between the enclosure and the substrate-supporting stack.
2. The shielded probe system of claim 1, wherein the electrically
conductive shielding structure is configured to shield the
electrically conductive support surface from electromagnetic
radiation that is generated external to the shielded volume, and
further wherein the electrically conductive shielding structure
includes an electrically conductive peripheral shield that is
spaced-apart from the substrate-supporting stack and extends around
an external periphery of the substrate-supporting stack.
3. The shielded probe system of claim 2, wherein the electrically
conductive shielding structure further includes a flexible,
electrically conductive lower shield that extends between the
substrate-supporting stack and the electrically conductive
peripheral shield, and further wherein the electrically conductive
lower shield fluidly isolates the shielded volume from the
temperature-controlled chuck.
4. The shielded probe system of claim 3, wherein the electrically
conductive lower shield is configured to permit relative motion
between the electrically conductive peripheral shield and the
substrate-supporting stack.
5. The shielded probe system of claim 1, wherein the electrically
conductive shielding structure further includes an electrically
conductive upper shield that extends above the electrically
conductive support surface.
6. The shielded probe system of claim 5, wherein the electrically
conductive shielding structure includes an electrically conductive
peripheral shield that is spaced-apart from the
substrate-supporting stack and extends around an external periphery
of the substrate-supporting stack, wherein the electrically
conductive shielding structure further includes an electrically
conductive gasket that extends between the electrically conductive
peripheral shield and the electrically conductive upper shield, and
further wherein the electrically conductive gasket is configured to
restrict electromagnetic radiation from entering the shielded
volume.
7. The shielded probe system of claim 6, wherein the electrically
conductive shielding structure is configured to selectively contact
the electrically conductive gasket with the electrically conductive
upper shield and to selectively retract the electrically conductive
gasket from the electrically conductive upper shield.
8. The shielded probe system of claim 1, wherein the
temperature-controlled chuck, the translation stage, and the
isolation structure each are external to the shielded volume.
9. The shielded probe system of claim 1, wherein the isolation
structure spatially separates the electrically conductive shielding
structure from the translation stage.
10. The shielded probe system of claim 1, wherein the thermal
shielding structure surrounds at least a portion of the
electrically conductive shielding structure.
11. The shielded probe system of claim 10, wherein the at least a
portion of the electrically conductive shielding structure includes
an external periphery of an electrically conductive peripheral
shield, and further wherein the thermal shielding structure is
spaced-apart from the external periphery of the electrically
conductive peripheral shield.
12. The shielded probe system of claim 1, wherein the enclosure is
an electrically conductive enclosure, and wherein the shielded
probe system further includes a shield conductor that is in
electrical communication with the enclosure and configured to at
least one of: (i) maintain the enclosure at a shield potential; and
(ii) ground the enclosure.
13. The shielded probe system of claim 1, wherein the shielded
probe system further includes a guard conductor that is in
electrical communication with the electrically conductive shielding
structure and configured to at least one of: (i) maintain the
electrically conductive shielding structure at a guard potential;
and (ii) ground the electrically conductive shielding
structure.
14. The shielded probe system of claim 13, wherein the probe system
further includes a switching structure configured to selectively
apply the guard potential to the guard conductor and to selectively
ground the guard conductor.
15. The shielded probe system of claim 1, wherein the shielded
probe system further includes an environmental control assembly
configured to provide a purge gas stream to the shielded volume to
regulate a chemical composition of a testing environment that
extends within the shielded volume.
16. The shielded probe system of claim 1, wherein the
temperature-controlled chuck includes an electrically conductive
upper chuck layer, and wherein the shielded probe system further
includes a guard conductor that is in electrical communication with
the electrically conductive upper chuck layer and configured to
maintain the electrically conductive upper chuck layer at one of:
(i) a shield potential; and (ii) a guard potential.
17. The shielded probe system of claim 16, wherein the
substrate-supporting stack further includes a lower electrically
insulating layer that extends between the electrically conductive
upper chuck layer and at least a portion of the electrically
conductive shielding structure, and further wherein the lower
electrically insulating layer is a thermally conductive lower
electrically insulating layer configured to facilitate thermal
exchange between the temperature-controlled chuck and the
electrically conductive support surface.
18. The shielded probe system of claim 1, wherein the
substrate-supporting stack further includes an electrically
conductive upper stack layer that defines the electrically
conductive support surface, wherein the substrate-supporting stack
further includes an upper electrically insulating layer that
extends between the temperature-controlled chuck and the
electrically conductive upper stack layer, wherein the upper
electrically insulating layer further extends between the
electrically conductive upper stack layer and at least a portion of
the electrically conductive shielding structure, and further
wherein the upper electrically insulating layer is a thermally
conductive upper electrically insulating layer configured to
facilitate thermal exchange between the temperature-controlled
chuck and the electrically conductive upper stack layer.
19. The shielded probe system of claim 1, wherein a ratio of a
volume of the shielded volume to a volume of the enclosure volume
is at least 0.001 and at most 0.25.
20. The shielded probe system of claim 1, wherein the shielded
probe system further includes a contacting assembly including a
plurality of probe tips, wherein each of the plurality of probe
tips is configured to at least one of: (i) provide a corresponding
test signal to the DUT; and (ii) receive a corresponding resultant
signal from the DUT.
Description
FIELD OF THE DISCLOSURE
[0001] The present disclosure relates generally to shielded probe
systems and more specifically to shielded probe systems that
utilize a shielding structure to shield a testing environment from
an ambient environment that surrounds the probe system.
BACKGROUND OF THE DISCLOSURE
[0002] Probe systems may be utilized to test operation and/or
performance of a device under test (DUT). Probe systems generally
include one or more probes that may be configured to provide a test
signal to the DUT and/or to receive a resultant signal from the
DUT. By measuring the response of the DUT to the test signal (e.g.,
by measuring and/or quantifying the resultant signal), the
operation and/or performance of the DUT may be quantified.
[0003] Under certain circumstances, it may be desirable to test the
DUT under controlled environmental conditions. As examples, it may
be desirable to test the DUT under controlled thermal conditions,
under controlled light conditions, and/or under controlled
atmospheric conditions, such as to quantify operation and/or
performance of the DUT under these controlled environmental
conditions. Additionally or alternatively, it also may be desirable
to test the DUT under low noise conditions, such as by limiting
electromagnetic interference (EMI) with the testing process and/or
by limiting electromagnetic radiation and/or electric fields within
the testing environment. Thus, there exists a need for improved
shielded probe systems.
SUMMARY OF THE DISCLOSURE
[0004] Shielded probe systems are disclosed herein. The shielded
probe systems, which also may be referred to herein as a probe
system, are configured to test a device under test (DUT) and
include an enclosure that defines an enclosure volume. The probe
systems also include a translation stage including a stage surface
that extends within the enclosure volume and a substrate-supporting
stack extending from the stage surface. The substrate-supporting
stack includes an electrically conductive support surface, which is
configured to support a substrate that includes the DUT, and a
temperature-controlled chuck, which is configured to regulate a
temperature of the electrically conductive support surface.
[0005] The probe systems further include an electrically conductive
shielding structure extending within the enclosure volume. The
electrically conductive shielding structure defines a shielded
volume that is a subset of the enclosure volume and that contains
the electrically conductive support surface. The electrically
conductive shielding structure extends between the electrically
conductive support surface and the enclosure, the translation
stage, and the temperature-controlled chuck.
[0006] The probe systems further include an isolation structure and
a thermal shielding structure. The isolation structure electrically
isolates the electrically conductive shielding structure from the
enclosure and from the translation stage. The thermal shielding
structure extends within the enclosure volume and at least
partially between the enclosure and the substrate-supporting
stack.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] FIG. 1 is a less schematic cross-sectional view of a portion
of a shielded probe system according to the present disclosure.
[0008] FIG. 2 is a schematic representation of shielded probe
systems according to the present disclosure.
[0009] FIG. 3 is a schematic representation of shielded probe
systems according to the present disclosure.
DETAILED DESCRIPTION AND BEST MODE OF THE DISCLOSURE
[0010] FIGS. 1-3 provide examples of shielded probe systems 20
according to the present disclosure. Elements that serve a similar,
or at least substantially similar, purpose are labeled with like
numbers in each of FIGS. 1-3, and these elements may not be
discussed in detail herein with reference to each of FIGS. 1-3.
Similarly, all elements may not be labeled in each of FIGS. 1-3,
but reference numerals associated therewith may be utilized herein
for consistency. Elements, components, and/or features that are
discussed herein with reference to one or more of FIGS. 1-3 may be
included in and/or utilized with any of FIGS. 1-3 without departing
from the scope of the present disclosure. In general, elements that
are likely to be included in a particular embodiment are
illustrated in solid lines, while elements that are optional are
illustrated in dash-dot-dot lines. However, elements that are shown
in solid lines may not be essential and, in some embodiments, may
be omitted without departing from the scope of the present
disclosure.
[0011] FIG. 1 is a representation of a shielded probe system 20
according to the present disclosure, while FIGS. 2-3 provide more
schematic representations of additional embodiments of shielded
probe systems 20 according to the present disclosure. Shielded
probe systems 20 also may be referred to herein as a shielded probe
system 20, a test system 20, a probe system 20, and/or a system 20.
Probe systems 20 may be adapted, configured, designed, shaped,
sized, and/or constructed to test one or more devices under test
(DUTs) 92, which may be formed on, supported by, and/or included in
a substrate 90.
[0012] As illustrated in FIGS. 1-3, probe systems 20 include an
enclosure 30 that at least partially bounds, or defines, an
enclosure volume 32. Enclosure volume 32 may be adapted,
configured, designed, shaped, sized, and/or constructed to receive
substrate 90 and/or DUT 92.
[0013] Probe systems 20 further may include a contacting assembly
50 configured to contact DUT 92 with one or more probes 56. As
illustrated in FIGS. 1-3, contacting assembly 50 may include one or
more probe arms 55, one or more probes 56 with a corresponding one
or more probe tips 58, and/or one or more manipulators 53.
Manipulator 53 may be external to enclosure volume 32, such that
probe 56 may be oriented within enclosure volume 32 and probe arm
55 may operatively connect manipulator 53 to probe 56. Probe 56 may
include, and/or be, a needle probe 54. In addition, and as
illustrated, at least a portion of contacting assembly 50 may
extend through and/or within an aperture 232.
[0014] As illustrated in FIGS. 1-3, probe systems 20 further
include an electrically conductive shielding structure 200, which
may be configured to provide electromagnetic shielding to a
shielded volume 202. Additionally, probe systems 20 include a
thermal shielding structure 400, which may be configured to provide
thermal shielding to shielded volume 202.
[0015] As also illustrated in FIGS. 1-3, probe systems 20 further
include a substrate-supporting stack 100 that includes an
electrically conductive support surface 152 configured to support
substrate 90 and/or DUT 92. Substrate-supporting stack 100 also may
be referred to herein as a chuck assembly 100, a
substrate-supporting chuck assembly 100, and/or a
substrate-supporting assembly 100. Electrically conductive support
surface 152 also may be referred to herein as a support surface
152.
[0016] As also illustrated in FIGS. 1-3, probe systems 20 include a
translation stage 40 extending within enclosure volume 32.
Translation stage 40 includes a stage surface 42 configured to
support substrate-supporting stack 100. Translation stage 40 may be
configured to operatively translate substrate-supporting stack 100
relative to probes 56 and/or to operatively rotate
substrate-supporting stack 100 relative to probes 56, such as to
facilitate alignment between one or more DUTs 92 and probes 56.
Translation stage 40 is at least partially, or even fully, external
to shielded volume 202.
[0017] Substrate-supporting stack 100 extends from stage surface 42
and at least partially within shielded volume 202 of enclosure
volume 32. Substrate-supporting stack 100 includes a
temperature-controlled chuck 110 configured to regulate a
temperature of support surface 152, and thereby to regulate a
temperature of substrate 90 and/or DUTs 92. Temperature-controlled
chuck 110 also may be referred to herein as a thermal chuck 110
and/or as a chuck 110. Temperature-controlled chuck 110 is at least
partially, or even fully, external to shielded volume 202.
[0018] Probe systems 20 further include an isolation structure 300
that electrically isolates electrically conductive shielding
structure 200 from enclosure 30 and from translation stage 40. As
illustrated, isolation structure 300 may be at least partially, or
even fully, external to shielded volume 202. Isolation structure
300 may extend between at least a portion of shielding structure
200 and translation stage 40, and/or may spatially separate
shielding structure 200 from translation stage 40. Isolation
structure 300 may be operatively attached to stage surface 42 of
translation stage 40, and/or may be operatively attached to
shielding structure 200. Isolation structure 300 may be formed from
any appropriate material, and may include, or be, an electrically
insulating material and/or a thermally insulating material.
[0019] Probe systems 20 further include thermal shielding structure
400 extending within enclosure volume 32 and at least partially
between enclosure 30 and substrate-supporting stack 100. Thermal
shielding structure 400 may surround at least a portion of
shielding structure 200, such as to at least partially thermally
isolate shielded volume 202 from a remainder of enclosure volume
32. Thermal shielding structure 400 may be formed from any
appropriate material, and may include, or be, a thermally
insulating material.
[0020] Probe systems 20 according to the present disclosure may be
configured to provide environmental shielding to shielded volume
202 via a plurality of distinct structures. As examples,
electrically conductive shielding structure 200 may be configured
to provide electromagnetic shielding to shielded volume 202, and
thermal shielding structure 400 may be configured to provide
thermal shielding to shielded volume 202. Additionally, isolation
structure 300 may be configured to electrically isolate shielding
structure 200, such as to facilitate applying an electrical bias to
shielding structure 200. Because probe systems 20 according to the
present disclosure utilize distinct electromagnetic shielding
elements and thermal shielding elements, each of shielding
structure 200, isolation structure 300, and thermal shielding
structure 400 may be individually configured to exhibit a specific
respective shielding characteristic.
[0021] Additionally, probe systems 20 according to the present
disclosure may be configured such that shielded volume 202 has a
size, shape, and/or orientation that facilitates electromagnetic,
thermal, and/or environmental shielding thereof. Additionally or
alternatively, utilizing a plurality of distinct shielding elements
may allow for control of a testing environment within shielded
volume 202 to a higher degree of precision and/or accuracy relative
to traditional probe systems.
[0022] During operation of probe system 20 of FIG. 1, manipulator
53 may be utilized to operatively translate needle probes 54
throughout a needle probe range-of-motion, thereby operatively
translating probe tips 58 relative to DUT 92. As an example, one or
more manipulators 53 may be utilized to operatively align one or
more probe tips 58 with specific, target, and/or desired locations
on DUT 92, such as to permit communication between the
corresponding probes and the DUT. This may include operative
translation of probes 56 in a plurality of different, separate,
distinct, perpendicular, and/or orthogonal directions, such as the
X, Y, and/or Z-directions that are illustrated in FIGS. 1-3. In the
example of FIGS. 1-3, the X and Y-directions may be parallel, or at
least substantially parallel, to an upper surface of substrate 90,
while the Z-direction may be perpendicular, or at least
substantially perpendicular, to the upper surface of substrate 90.
However, this specific configuration is not required.
[0023] As discussed, probe systems 20 include electrically
conductive shielding structure 200. Electrically conductive
shielding structure 200 also may be referred to herein as a
shielding structure 200. Shielding structure 200 may extend between
enclosure 30, or at least a portion of enclosure 30, and support
surface 152, or at least a portion of support surface 152.
[0024] Shielding structure 200 may be adapted, configured,
designed, shaped, sized, and/or constructed to shield shielded
volume 202, which is a subset of enclosure volume 32. This may
include shielding the shielded volume from an ambient environment,
and the ambient environment may surround enclosure 30 and/or
shielding structure 200, may be external to enclosure 30 and/or
shielding structure 200, and/or may be external to enclosure volume
32 and/or shielded volume 202. As examples, shielding structure 200
may shield the shielded volume from electromagnetic radiation that
may be present in the ambient environment, from electric fields
that may be present within the ambient environment, from magnetic
fields that may be present in the ambient environment, and/or from
visible light that may be present within the ambient
environment.
[0025] Shielded volume 202 may include and/or be any appropriate
fraction of enclosure volume 32. As examples, a ratio of a volume
of shielded volume 202 to a volume of enclosure volume 32 may be at
least 0.001, at least 0.005, at least 0.01, at least 0.05, at least
0.1, at least 0.15, at least 0.2, at least 0.25, at most 0.5, at
most 0.4, at most 0.3, at most 0.25, at most 0.2, at most 0.15,
and/or at most 0.1.
[0026] The specific ratio between the volume, or magnitude, of
shielded volume 202 and the volume, or magnitude, of enclosure
volume 32 may be selected and/or specified based upon one or more
design criteria. As examples, the ratio may be selected and/or
specified based upon a distance that translation stage 40 moves in
the X-direction and in the Y-directions and/or based upon a
diameter of substrate 90. As another example, the distance that
translation stage 40 moves in the X-direction and in the
Y-direction may dictate a minimum value for the volume of enclosure
volume 32, or at least a minimum value for a cross-sectional area
of enclosure volume 32 as measured in the X-Y plane. This distance
generally is at least twice the diameter of substrate 90. As yet
another example, and since substrate 90 extends within shielded
volume 202, the minimum value for the cross-sectional area of
shielded volume 202, as measured in the X-Y plane, may be greater
than the area of an upper surface of substrate 90.
[0027] Substrate-supporting stack 100 additionally may include an
electrically conductive upper stack layer 150, which defines
electrically conductive support surface 152, and an upper
electrically insulating layer 140, which extends between
temperature-controlled chuck 110 and electrically conductive upper
stack layer 150. Electrically conductive upper stack layer 150 also
may be referred to herein as an upper stack layer 150, an upper
chuck assembly layer 150, and/or an upper substrate-supporting
layer 150. Upper stack layer 150 may be metallic and/or may be
thermally conductive.
[0028] As illustrated in FIGS. 1-3, upper electrically insulating
layer 140 additionally may extend between upper stack layer 150 and
at least a portion of shielding structure 200. More specifically,
upper electrically insulating layer 140 may be a thermally
conductive layer configured to facilitate thermal exchange between
temperature-controlled chuck 110 and upper stack layer 150 but to
resist electrical communication therebetween.
[0029] Shielding structure 200 extends between electrically
conductive support surface 152 and enclosure 30, between the
electrically conductive support surface and translation stage 40,
and between the electrically conductive support surface and
temperature-controlled chuck 110. Shielding structure 200 may
shield shielded volume 202 and/or support surface 152 that extends
therein in any suitable manner. As examples, shielding structure
200 may be metallic and/or metal-coated, may be electrically
grounded, and/or may be electrically biased to a target
potential.
[0030] Additionally, shielding structure 200 may be adapted,
configured, designed, shaped, sized, and/or constructed to
restrict, limit, block, and/or occlude fluid flow between shielded
volume 202 and a remainder of enclosure volume 32. Such a
configuration may permit one or more environmental conditions
within shielded volume 202 to be maintained differently from
corresponding environmental conditions within a remainder of
enclosure volume 32 and/or within an ambient environment that
surrounds probe system 20 and/or that is external to enclosure
volume 32. Examples of the one or more environmental conditions
include one or more of a humidity within the shielded volume, a
temperature within the shielded volume, and/or a gas composition
within the shielded volume.
[0031] Shielding structure 200 may restrict the fluid flow in any
suitable manner. As an example, shielding structure 200 may be
configured to restrict, limit, block, and/or occlude fluid flow
into shielded volume 202. As another example, shielding structure
200 may be configured to restrict, limit, block, and/or occlude
diffusion of moisture into shielded volume 202.
[0032] Shielding structure 200, or shielding structure 200 in
combination with enclosure 30, additionally or alternatively may be
adapted, configured, designed, sized, and/or constructed to
restrict, limit, block, and/or occlude transmission of ambient
light into shielded volume 202. As examples, shielding structure
200, or the combination of shielding structure 200 and enclosure
30, may be configured to attenuate the ambient light that passes
from an ambient environment into shielded volume 202 by at least
100 decibels (dB), by at least 110 dB, by at least 120 dB, by at
least 130 dB, and/or by at least 140 dB. This attenuation of
ambient light also may be referred to herein as shielding the
shielded volume from ambient, or visible, light that may be present
within the ambient environment.
[0033] Stated another way, shielding structure 200 may include
and/or may be formed from a light-absorbing material that absorbs
light that may be incident thereon and that thereby restricts,
limits, blocks, and/or occludes transmission of ambient light into
shielded volume 202. Additionally or alternatively, shielding
structure 200 may include and/or be formed from a light-reflecting
material that reflects light that may be incident thereon and that
thereby restricts, limits, blocks, and/or occludes transmission of
ambient light into shielded volume 202.
[0034] As illustrated in FIGS. 1-3, shielding structure 200 may
include an electrically conductive peripheral shield 210 that may
be spaced-apart from substrate-supporting stack 100. Electrically
conductive peripheral shield 210 also may be referred to herein as
a peripheral shield 210. Peripheral shield 210 may have an external
shield periphery 212 and may extend around an external stack
periphery 102 of substrate-supporting stack 100. Peripheral shield
210 and substrate-supporting stack 100 thus may together define an
annular region 204 that defines at least a portion of shielded
volume 202.
[0035] Shielding structure 200 additionally may include a flexible,
electrically conductive lower shield 220 that extends between
substrate-supporting stack 100 and peripheral shield 210.
Electrically conductive lower shield 220 also may be referred to
herein as a lower shield 220. Lower shield 220 may be configured to
fluidly isolate shielded volume 202 from temperature-controlled
chuck 110, such as to minimize and/or prevent fluid flow between
shielded volume 202 and temperature-controlled chuck 110.
Additionally or alternatively, lower shield 220 may extend between,
or at least partially between, temperature controlled chuck 110 and
support surface 152. Additionally or alternatively, lower shield
220 may be configured to limit heat transfer between
substrate-supporting stack 100 and/or temperature-controlled chuck
110 thereof and peripheral shield 210. Lower shield 220 may be
constructed of any appropriate material and may include a metal
foil, a metallic foil, a nickel foil, a metal-coated membrane,
and/or an electrically conductive membrane.
[0036] Probe system 20 additionally may include an electrically
conductive upper shield 230 that extends above, or is opposed to,
support surface 152. Electrically conductive upper shield 230 also
may be referred to herein as an upper shield 230. Upper shield 230
may include aperture 232, which may be sized to permit at least one
probe 56, a plurality of probes 56, and/or a plurality of
spaced-apart probes 56, to extend therethrough.
[0037] Shielding structure 200 additionally may include an
electrically conductive gasket 240 that extends between peripheral
shield 210 and upper shield 230. Electrically conductive gasket 240
also may be referred to herein as a shielding gasket 240 and/or as
a gasket 240. Electrically conductive gasket 240 may be configured
to form an at least partial fluid seal between peripheral shield
210 and upper shield 230, such as to minimize and/or prevent fluid
flow between shielded volume 202 and a remainder of enclosure
volume 32. Additionally or alternatively, electrically conductive
gasket 240 may be configured to restrict electromagnetic radiation
from entering shielded volume 202, such as from enclosure volume
32.
[0038] Electrically conductive gasket 240 is configured to
selectively contact upper shield 230 to form the at least partial
fluid seal and/or an electromagnetic shield between peripheral
shield 210 and upper shield 230, and may include any appropriate
material of construction. For example, electrically conductive
gasket 240 may include, or be, a resilient gasket, such as a foam
gasket. Additionally or alternatively, electrically conductive
gasket 240 may include, or be, an inflatable gasket configured to
be selectively inflated to selectively contact upper shield 230 and
selectively deflated to retract from upper shield 230.
[0039] As illustrated in FIGS. 1-3, probe system 20 additionally
may include a platen 80 that extends above electrically conductive
support surface 152 and that is configured to support contacting
assembly 50, or at least a portion of contacting assembly 50. For
example, and as illustrated in FIG. 1, manipulator 53 may be
operatively attached to platen 80.
[0040] FIGS. 2-3 further illustrate additional and/or optional
structures, components, and/or features that may be included in
and/or utilized with probe systems 20 according to the present
disclosure. Any of the structures, components, and/or features that
are discussed herein with reference to FIGS. 2-3 may be included in
and/or utilized with probe system 20 of FIG. 1 without departing
from the scope of the present disclosure. Similarly, any of the
structures, components, and/or features that are discussed herein
with reference to FIG. 1 may be included in and/or utilized with
probe systems 20 of FIGS. 2-3 without departing from the scope of
the present disclosure.
[0041] Lower shield 220 may be sufficiently flexible to permit
relative motion between peripheral shield 210 and
substrate-supporting stack 100 such that lower shield 220 may
provide uninterrupted electromagnetic and/or thermal shielding as a
relative position of substrate-supporting stack 100 and shielding
structure 200 is varied, such as due to a thermal expansion and/or
contraction of substrate-supporting stack 100, of shielding
structure 200, and/or of isolation structure 300. Thus, lower
shield 220 may include at least one expansion region 222 configured
to permit relative motion between peripheral shield 210 and
substrate-supporting stack 100. For example, expansion region 222
may be configured to expand and/or to contract to permit relative
motion between peripheral shield 210 and substrate-supporting stack
100, and may include at least one pleat.
[0042] As discussed, and as illustrated in FIGS. 1-3, electrically
conductive gasket 240 may be configured to selectively contact
upper shield 230 and retract from upper shield 230. Stated
differently, shielding structure 200 may be configured to
selectively contact electrically conductive gasket 240 with upper
shield 230 and/or to selectively retract electrically conductive
gasket 240 from upper shield 230, such as to permit relative motion
between substrate-supporting stack 100 and contacting assembly 50.
Specifically, FIGS. 1-2 illustrate electrically conductive gasket
240 in contact with upper shield 230, while FIG. 3 illustrates
electrically conductive gasket 240 retracted from the electrically
conductive upper shield.
[0043] Electrically conductive gasket 240 may be brought into
contact with upper shield 230 and/or removed from contact with
upper shield 230 in any appropriate manner. For example, and as
illustrated in FIG. 2, electrically conductive gasket 240 may
include, or be, an inflatable gasket, and probe system 20
additionally may include a pressurizing fluid source 242 configured
to selectively inflate the inflatable gasket and to selectively
deflate the inflatable gasket. Pressurizing fluid source 242 may be
configured to produce, supply, deliver, and/or control a flow of a
pressurizing fluid stream 246 through a pressurizing fluid conduit
244 operatively coupled to pressurizing fluid source 242 and
electrically conductive gasket 240.
[0044] Additionally or alternatively, shielding structure 200 may
include a drive mechanism 250 configured to selectively contact
electrically conductive gasket 240 with upper shield 230 and/or to
selectively retract electrically conductive gasket 240 from upper
shield 230. Drive mechanism 250 may include, or be, any appropriate
mechanism, and may be coupled to, integrated into, and/or at least
partially enclosed by peripheral shield 210.
[0045] Additionally or alternatively, translation stage 40 may be
configured to selectively contact electrically conductive gasket
240 with upper shield 230 and/or to selectively retract
electrically conductive gasket 240 from upper shield 230. For
example, translation stage 40 may be configured to translate
shielding structure 200 in at least the Z-direction as illustrated
in FIGS. 1-3 to selectively establish and/or cease mechanical
and/or electrical contact between electrically conductive gasket
240 and upper shield 230.
[0046] As discussed, and with continued reference to FIGS. 2-3,
thermal shielding structure 400 may be spaced-apart from external
shield periphery 212 of peripheral shield 210. However, this is not
required, and it is within the scope of the present disclosure that
shielding structure 400 additionally or alternatively may be in
direct physical contact with external shield periphery 212 of
peripheral shield 210. As illustrated in FIGS. 1-3, thermal
shielding structure 400 may extend between at least a portion of
shielding structure 200 and at least a portion of enclosure 30.
Additionally or alternatively, thermal shielding structure 400 may
extend between temperature-controlled chuck 110 and/or translation
stage 40. Thermal shielding structure 400 may be operatively
attached to stage surface 42 of translation stage 40, and/or may be
operatively attached to substrate-supporting stack 100.
Additionally or alternatively, isolation structure 300 may be
integrally formed with, form a portion of, and/or be operatively
coupled to thermal shielding structure 400.
[0047] Enclosure 30 may be an electrically conductive enclosure,
and/or may be configured to at least partially shield enclosure
volume 32 from the ambient environment that surrounds enclosure 30,
that is external to enclosure 30, and/or that is external to
enclosure volume 32. As examples, enclosure 30 may shield enclosure
volume 32 from electromagnetic radiation that may be present within
the ambient environment, from electric fields that may be present
within the ambient environment, from magnetic fields that may be
present within the ambient environment, and/or from visible light
that may be present within the ambient environment.
[0048] As a more specific example, and with reference to FIGS. 2-3,
probe system 20 additionally may include a shield conductor 60 in
electrical communication with enclosure 30. As used herein, the
term "electrical communication" may be used to describe an
electrical coupling and/or an electrical connection through which
an electric current may pass. Additionally or alternatively, the
term "electrical communication" may be used herein to describe an
electrical connection that may be characterized by a net electrical
resistance of less than 10 Ohms, less than 5 Ohms, less than 1 Ohm,
less than 0.5 Ohm, and/or less than 0.1 Ohm. Additionally or
alternatively, as used herein, the term "direct electrical
communication" may be used to describe an electrical coupling
and/or an electrical connection that is physically, mechanically,
and/or operatively connected to each element said to be in direct
electrical communication.
[0049] In an embodiment in which enclosure 30 is an electrically
conductive enclosure, shield conductor 60 may be configured to
maintain enclosure 30 at a predetermined and/or user-configurable
shield potential and/or to electrically ground enclosure 30. For
example, probe system 20 additionally may include a shield
potential generator 66 configured to generate the shield potential,
and shield conductor 60 may be in electrical communication with
shield potential generator 66 and enclosure 30.
[0050] Similarly, and as illustrated in FIGS. 2-3, probe system 20
may include a guard conductor 62 in electrical communication with
shielding structure 200 and configured to maintain shielding
structure 200 at a predetermined and/or user-configurable guard
potential and/or to electrically ground shielding structure 200.
For example, probe system 20 additionally may include a guard
potential generator 68 configured to generate the guard potential,
and guard conductor 62 may be in electrical communication with
guard potential generator 68 and shielding structure 200.
[0051] The guard potential may be equal, or at least substantially
equal, to the shield potential, or the guard potential may be
different than the shield potential. In an embodiment in which the
guard potential is equal, or at least substantially equal, to the
shield potential, shield potential generator 66 and guard potential
generator 68 may refer to a single potential generator. Probe
system 20 additionally may include a switching structure 64
configured to selectively apply the guard potential to guard
conductor 62 and to selectively ground guard conductor 62.
Switching structure 64 may be configured to selectively apply the
shield potential to shield conductor 60 and/or to selectively
ground shield conductor 60. Switching structure 64 additionally or
alternatively may be configured to electrically interconnect
electrically conductive upper chuck layer 120 and/or electrically
conductive upper stack layer 150 with a signal generator/measuring
unit 67. Signal generator/measuring unit 67 may be configured to
provide any suitable signal to upper chuck layer 120, to provide
any suitable signal to electrically conductive upper stack layer
150, to receive any suitable signal from upper chuck layer 120,
and/or to receive any suitable signal from electrically conductive
upper stack layer 150. Switching structure 64 may include, or be,
any appropriate mechanism, such as an electrical switch, an
electrical relay, and/or a solid-state relay.
[0052] In addition to shielding shielded volume 202 from electrical
and/or thermal disturbances, probe system 20 additionally may be
configured to provide, modify, control, and/or regulate an
atmospheric environment within shielded volume 202. For example,
and with reference to FIGS. 2-3, probe system 20 additionally may
include an environmental control assembly 70 that is configured to
regulate a chemical composition of a testing environment that
extends within shielded volume 202. The testing environment may
occupy a portion of, a majority of, and/or an entirety of shielded
volume 202. Specifically, environmental control assembly 70 may be
configured to provide a purge gas stream 74 to shielded volume 202
to regulate the chemical composition of the testing environment,
for example via a purge gas conduit 72. As examples, purge gas
stream 74 may include and/or be a dry, or at least substantially
dry, purge gas stream; a low humidity purge gas stream; an inert
purge gas stream; and/or an oxygen-free, or at least substantially
oxygen-free, purge gas stream. Environmental control assembly 70
may include a purge gas source 71 configured to generate purge gas
stream 74.
[0053] Probe system 20 also may be configured to provide, modify,
control, and/or regulate an atmospheric environment within a
portion of enclosure volume 32 that is external to shielded volume
202. For example, purge gas stream 74 may be a first purge gas
stream 74, and environmental control assembly 70 additionally may
be configured to provide a second purge gas stream 78 to a portion
of enclosure volume 32 that is external to shielded volume 202.
Similarly, in an embodiment that includes second purge gas stream
78, purge gas conduit 72 may be a first purge gas conduit 72, and
environmental control assembly 70 additionally may include a second
purge gas conduit 76 configured to provide second purge gas stream
78 to a portion of enclosure volume 32 that is external to shielded
volume 202.
[0054] As discussed, temperature-controlled chuck 110 is configured
to regulate a temperature of support surface 152, and thereby to
regulate a temperature of substrate 90 and/or DUT 92. Specifically,
temperature-controlled chuck 110 may be configured to regulate a
temperature of substrate 90 and/or DUT 92 over a test temperature
range. As examples, the test temperature range may extend over at
least 100 degrees Celsius, at least 150 degrees Celsius, at least
200 degrees Celsius, at least 250 degrees Celsius, at least 300
degrees Celsius, at least 350 degrees Celsius, at least 400 degrees
Celsius, at least 450 degrees Celsius, and/or at least 500 degrees
Celsius.
[0055] The test temperature range may extend between a minimum test
temperature and a maximum test temperature. Examples of the minimum
test temperature include minimum test temperatures of at least
-200.degree. C., at least -150.degree. C., at least -100.degree.
C., at least -50.degree. C., at least 0.degree. C., and/or at least
50.degree. C. Examples of the maximum test temperature include
maximum test temperatures of at most 100.degree. C., at most
150.degree. C., at most 200.degree. C., at most 250.degree. C., at
most 300.degree. C., at most 350.degree. C., or at most 400.degree.
C.
[0056] With continued reference to FIGS. 2-3,
temperature-controlled chuck 110 may include an electrically
conductive upper chuck layer 120 positioned between upper
electrically insulating layer 140 and a remainder of
temperature-controlled chuck 110. Electrically conductive upper
chuck layer 120 also may be referred to herein as an upper chuck
layer 120. Upper chuck layer 120 may be in electrical
communication, and/or in direct electrical communication, with at
least a portion of shielding structure 200. Additionally or
alternatively, in an embodiment that includes guard conductor 62,
guard conductor 62 may be in electrical communication with upper
chuck layer 120 and/or may be configured to maintain upper chuck
layer 120 at the shield potential and/or at the guard
potential.
[0057] Temperature-controlled chuck 110 additionally may include a
lower electrically insulating layer 130 that extends between upper
chuck layer 120 and at least a portion of shielding structure 200.
Lower electrically insulating layer 130 may be thermally
conductive, and may be configured to facilitate thermal exchange
between temperature-controlled chuck 110 and support surface 152
and/or between a remainder of temperature-controlled chuck 110 and
support surface 152. However, lower electrically insulating layer
130 also may electrically isolate upper chuck layer 120 and/or
temperature-controlled chuck 110 from electrically conductive
shielding structure 200.
[0058] As discussed, upper stack layer 150 may be configured to
support substrate 90 via support surface 152. As illustrated in
FIGS. 2-3, upper stack layer 150 additionally may include a vacuum
distribution manifold 154 configured to apply a retention vacuum to
support surface 152 to retain substrate 90 on support surface 152.
Vacuum distribution manifold 154 may be coupled to a vacuum source
156 via a vacuum conduit 158.
[0059] Enclosure 30 may include and/or be any suitable structure
that may define enclosure volume 32 and/or that may house and/or
contain at least a portion of contacting assembly 50, substrate 90,
and/or DUT 92. In addition, enclosure 30 also may be configured to
shield and/or protect at least a portion of contacting assembly 50,
substrate 90, and/or DUT 92 from the ambient environment that
surrounds probe system 20. Specifically, enclosure 30 may be
configured to shield support surface 152, substrate 90, and/or DUT
92 from electromagnetic radiation generated external to enclosure
volume 32. For example, enclosure 30 may be formed from an
electromagnetically shielding material. Additionally or
alternatively, enclosure 30 may be an electrically conductive
enclosure, may be a metallic enclosure, and/or may be an
electrically shielded enclosure. Additionally or alternatively,
enclosure 30 may be configured to thermally insulate support
surface 152, substrate 90, and/or DUT 92 from the ambient
environment that surrounds enclosure 30.
[0060] As examples, enclosure 30 may include and/or be a sealed,
fluidly sealed, and/or hermetically sealed enclosure. As additional
examples, enclosure 30 may be configured to restrict transmission
of ambient light and/or other electromagnetic radiation into
enclosure volume 32. As yet another example, enclosure 30 may be
configured to provide shielding for DUT 92 and/or probe 56 from
electromagnetic radiation. As another example, enclosure 30 may
include one or more walls, which may at least partially bound
enclosure volume 32.
[0061] As discussed, translation stage 40 is configured to
operatively translate and/or rotate substrate-supporting stack 100.
More specifically, translation stage 40 may be configured to
operatively and/or simultaneously translate substrate-supporting
stack 100, isolation structure 300, thermal shielding structure
400, and/or at least a portion of electrically conductive shielding
structure 200 relative to enclosure 30 along a first axis and along
a second axis that is perpendicular, or at least substantially
perpendicular, to the first axis. The first axis and the second
axis may both be parallel, or at least substantially parallel, to
support surface 152. For example, the first axis may be oriented in
the X-direction as illustrated in FIGS. 1-3, and/or the second axis
may be oriented in the Y-direction as illustrated in FIGS. 1-3.
[0062] Translation stage 40 additionally may be configured to
operatively and/or simultaneously translate substrate-supporting
stack 100, isolation structure 300, thermal shielding structure
400, and/or at least a portion of electrically conductive shielding
structure 200 relative to enclosure 30 along a third axis that is
perpendicular, or at least substantially perpendicular, to support
surface 152. For example, the third axis may be oriented in the
Z-direction as illustrated in FIGS. 1-3.
[0063] Additionally or alternatively, translation stage 40 may be
configured to operatively and/or simultaneously rotate
substrate-supporting stack 100, isolation structure 300, thermal
shielding structure 400, and/or at least a portion of electrically
conductive shielding structure 200 about a rotation axis. The
rotation axis may be perpendicular, or at least substantially
perpendicular, to support surface 152, and/or may be the third
axis.
[0064] As discussed, probe system 20 may include contacting
assembly 50 configured to contact DUT 92 with one or more probe
tips 58 of a corresponding one or more probes 56. More
specifically, and with reference to FIGS. 2-3, contacting assembly
50 may include a plurality of probe tips 58, and each of the
plurality of probe tips 58 may be configured to provide a
corresponding test signal 86 to DUT 92 and/or to receive a
corresponding resultant signal 88 from DUT 92. Test signal 86 may
include, or be, a direct current test signal and/or an alternating
current test signal. Contacting assembly 50 additionally or
alternatively may include a probe head assembly 52 that includes
the plurality of probe tips 58 and/or a corresponding plurality of
probes 56. Additionally or alternatively, probe system 20 may
include a signal generation and analysis assembly 84 that is
configured to provide corresponding test signal 86 to contacting
assembly 50 and/or to receive corresponding resultant signal 88
from the contacting assembly.
[0065] Manipulator 53 may include and/or be any suitable structure
that may be operatively attached to probe 56, such as via probe arm
55, and/or that may be configured to operatively translate probe 56
throughout the probe range-of-motion. As discussed, manipulator 53
may be external to enclosure volume 32 and/or may be operatively
attached to platen 80. As also discussed, the probe arm
range-of-motion may extend in three orthogonal, or at least
substantially orthogonal, axes, such as the X, Y, and Z-axes of
FIGS. 1-3.
[0066] Manipulator 53 may include any suitable structure. As
examples, manipulator 53 may include one or more translation
stages, lead screws, ball screws, rack and pinion assemblies,
motors, stepper motors, electrical actuators, mechanical actuators,
micrometers, and/or manual actuators. Manipulator 53 may be a
manually actuated manipulator and/or an automated, or electrically
actuated, manipulator.
[0067] Substrate 90 may include and/or be any suitable structure
that may support, include, and/or have formed thereon DUT 92.
Examples of substrate 90 include a wafer, a semiconductor wafer, a
silicon wafer, and/or a gallium arsenide wafer.
[0068] Similarly, DUT 92 may include and/or be any suitable
structure that may be probed and/or tested by probe system 20. As
examples, DUT 92 may include a semiconductor device, an electronic
device, an optical device, a logic device, a power device, a
switching device, and/or a transistor.
[0069] As used herein, the term "and/or" placed between a first
entity and a second entity means one of (1) the first entity, (2)
the second entity, and (3) the first entity and the second entity.
Multiple entities listed with "and/or" should be construed in the
same manner, i.e., "one or more" of the entities so conjoined.
Other entities may optionally be present other than the entities
specifically identified by the "and/or" clause, whether related or
unrelated to those entities specifically identified. Thus, as a
non-limiting example, a reference to "A and/or B," when used in
conjunction with open-ended language such as "comprising" may
refer, in one embodiment, to A only (optionally including entities
other than B); in another embodiment, to B only (optionally
including entities other than A); in yet another embodiment, to
both A and B (optionally including other entities). These entities
may refer to elements, actions, structures, steps, operations,
values, and the like.
[0070] As used herein, the phrase "at least one," in reference to a
list of one or more entities should be understood to mean at least
one entity selected from any one or more of the entity in the list
of entities, but not necessarily including at least one of each and
every entity specifically listed within the list of entities and
not excluding any combinations of entities in the list of entities.
This definition also allows that entities may optionally be present
other than the entities specifically identified within the list of
entities to which the phrase "at least one" refers, whether related
or unrelated to those entities specifically identified. Thus, as a
non-limiting example, "at least one of A and B" (or, equivalently,
"at least one of A or B," or, equivalently "at least one of A
and/or B") may refer, in one embodiment, to at least one,
optionally including more than one, A, with no B present (and
optionally including entities other than B); in another embodiment,
to at least one, optionally including more than one, B, with no A
present (and optionally including entities other than A); in yet
another embodiment, to at least one, optionally including more than
one, A, and at least one, optionally including more than one, B
(and optionally including other entities). In other words, the
phrases "at least one," "one or more," and "and/or" are open-ended
expressions that are both conjunctive and disjunctive in operation.
For example, each of the expressions "at least one of A, B and C,"
"at least one of A, B, or C," "one or more of A, B, and C," "one or
more of A, B, or C" and "A, B, and/or C" may mean A alone, B alone,
C alone, A and B together, A and C together, B and C together, A, B
and C together, and optionally any of the above in combination with
at least one other entity.
[0071] In the event that any patents, patent applications, or other
references are incorporated by reference herein and (1) define a
term in a manner that is inconsistent with and/or (2) are otherwise
inconsistent with, either the non-incorporated portion of the
present disclosure or any of the other incorporated references, the
non-incorporated portion of the present disclosure shall control,
and the term or incorporated disclosure therein shall only control
with respect to the reference in which the term is defined and/or
the incorporated disclosure was present originally.
[0072] As used herein the terms "adapted" and "configured" mean
that the element, component, or other subject matter is designed
and/or intended to perform a given function. Thus, the use of the
terms "adapted" and "configured" should not be construed to mean
that a given element, component, or other subject matter is simply
"capable of" performing a given function but that the element,
component, and/or other subject matter is specifically selected,
created, implemented, utilized, programmed, and/or designed for the
purpose of performing the function. It is also within the scope of
the present disclosure that elements, components, and/or other
recited subject matter that is recited as being adapted to perform
a particular function may additionally or alternatively be
described as being configured to perform that function, and vice
versa.
[0073] As used herein, the phrase, "for example," the phrase, "as
an example," and/or simply the term "example," when used with
reference to one or more components, features, details, structures,
and/or embodiments according to the present disclosure, are
intended to convey that the described component, feature, detail,
structure, and/or embodiment is an illustrative, non-exclusive
example of components, features, details, structures, and/or
embodiments according to the present disclosure. Thus, the
described component, feature, detail, structure, and/or embodiment
is not intended to be limiting, required, or exclusive/exhaustive;
and other components, features, details, structures, and/or
embodiments, including structurally and/or functionally similar
and/or equivalent components, features, details, structures, and/or
embodiments, are also within the scope of the present
disclosure.
[0074] Illustrative, non-exclusive examples of probe systems
according to the present disclosure are presented in the following
enumerated paragraphs.
[0075] A1. A shielded probe system for testing a device under test
(DUT), the probe system comprising:
[0076] an enclosure defining an enclosure volume;
[0077] a translation stage including a stage surface that extends
within the enclosure volume;
[0078] a substrate-supporting stack extending from the stage
surface and within the enclosure volume, wherein the
substrate-supporting stack includes an electrically conductive
support surface, which is configured to support a substrate that
includes the DUT, and a temperature-controlled chuck, which is
configured to regulate a temperature of the electrically conductive
support surface;
[0079] an electrically conductive shielding structure extending
within the enclosure volume and defining a shielded volume that
contains the electrically conductive support surface, wherein the
shielded volume is a subset of the enclosure volume, and further
wherein the electrically conductive shielding structure extends
between the electrically conductive support surface and the
enclosure, the translation stage, and the temperature-controlled
chuck;
[0080] an isolation structure that electrically isolates the
electrically conductive shielding structure from the enclosure and
from the translation stage; and
[0081] a thermal shielding structure extending within the enclosure
volume and at least partially between the enclosure and the
substrate-supporting stack.
[0082] A2. The shielded probe system of paragraph A1, wherein the
electrically conductive shielding structure is configured to shield
the electrically conductive support surface from electromagnetic
radiation that is generated external to the shielded volume.
[0083] A3. The shielded probe system of any of paragraphs A1-A2,
wherein the electrically conductive shielding structure includes an
electrically conductive peripheral shield that is spaced-apart from
the substrate-supporting stack and extends around an external
periphery of the substrate-supporting stack.
[0084] A4. The shielded probe system of paragraph A3, wherein the
electrically conductive peripheral shield and the
substrate-supporting stack together define an annular region that
defines at least a portion of the shielded volume.
[0085] A5. The shielded probe system of any of paragraphs A3-A4,
wherein the electrically conductive shielding structure further
includes a flexible, electrically conductive lower shield that
extends between the substrate-supporting stack and the electrically
conductive peripheral shield.
[0086] A6. The shielded probe system of paragraph A5, wherein the
electrically conductive lower shield fluidly isolates the shielded
volume from the temperature-controlled chuck.
[0087] A7. The shielded probe system of any of paragraphs A5-A6,
wherein the electrically conductive lower shield further extends
between the temperature-controlled chuck and the electrically
conductive support surface.
[0088] A8. The shielded probe system of any of paragraphs A5-A7,
wherein the electrically conductive lower shield is configured to
limit heat transfer from the temperature-controlled chuck to the
electrically conductive peripheral shield.
[0089] A9. The shielded probe system of any of paragraphs A5-A8,
wherein the electrically conductive lower shield includes at least
one of a metal foil, a metallic foil, a nickel foil, a metal-coated
membrane, and an electrically conductive membrane.
[0090] A10. The shielded probe system of any of paragraphs A5-A9,
wherein the electrically conductive lower shield is configured to
permit relative motion between the electrically conductive
peripheral shield and the substrate-supporting stack.
[0091] A11. The shielded probe system of any of paragraphs A5-A10,
wherein the electrically conductive lower shield includes at least
one expansion region configured to permit relative motion between
the electrically conductive peripheral shield and the
substrate-supporting stack.
[0092] A12. The shielded probe system of paragraph A11, wherein the
expansion region is configured to at least one of expand and
contract to permit the relative motion between the electrically
conductive peripheral shield and the substrate-supporting
stack.
[0093] A13. The shielded probe system of any of paragraphs A11-A12,
wherein the expansion region includes at least one pleat.
[0094] A14. The shielded probe system of any of paragraphs A1-A13,
wherein the electrically conductive shielding structure further
includes an electrically conductive upper shield that extends above
the electrically conductive support surface.
[0095] A15. The shielded probe system of paragraph A14, wherein the
electrically conductive upper shield includes an aperture sized to
permit at least one probe, optionally a plurality of probes, and
further optionally a plurality of spaced-apart probes, to extend
therethrough.
[0096] A16. The shielded probe system of any of paragraphs A14-A15,
when dependent upon paragraph A3, wherein the electrically
conductive shielding structure further includes an electrically
conductive gasket that extends between the electrically conductive
peripheral shield and the electrically conductive upper shield.
[0097] A17. The shielded probe system of paragraph A16, wherein the
electrically conductive gasket is configured to form an at least
partial fluid seal between the electrically conductive peripheral
shield and the electrically conductive upper shield.
[0098] A18. The shielded probe system of any of paragraphs A16-A17,
wherein the electrically conductive gasket is configured to
restrict electromagnetic radiation from entering the shielded
volume.
[0099] A19. The shielded probe system of any of paragraphs A16-A18,
wherein the electrically conductive gasket includes a resilient
gasket, and optionally a foam gasket.
[0100] A20. The shielded probe system of any of paragraphs A16-A19,
wherein the electrically conductive gasket includes an inflatable
gasket configured to be:
[0101] (i) selectively inflated to selectively contact the
electrically conductive upper shield; and
[0102] (ii) selectively deflated to retract from the electrically
conductive upper shield.
[0103] A21. The shielded probe system of paragraph A20, wherein the
shielded probe system further includes a pressurizing fluid source
configured to selectively inflate the inflatable gasket and to
selectively deflate the inflatable gasket.
[0104] A22. The shielded probe system of any of paragraphs A16-A21,
wherein the electrically conductive shielding structure is
configured to selectively contact the electrically conductive
gasket with the electrically conductive upper shield and to
selectively retract the electrically conductive gasket from the
electrically conductive upper shield.
[0105] A23. The shielded probe system of any of paragraphs A16-A22,
wherein the electrically conductive shielding structure further
includes a drive mechanism configured to selectively contact the
electrically conductive gasket with the electrically conductive
upper shield and to selectively retract the electrically conductive
gasket from the electrically conductive upper shield.
[0106] A24. The shielded probe system of any of paragraphs A16-A23,
wherein the translation stage is configured to selectively contact
the electrically conductive gasket with the electrically conductive
upper shield and to selectively retract the electrically conductive
gasket from the electrically conductive upper shield.
[0107] A25. The shielded probe system of any of paragraphs A1-A24,
wherein the electrically conductive shielding structure is at least
one of metallic and metal-coated.
[0108] A26. The shielded probe system of any of paragraphs A1-A25,
wherein the temperature-controlled chuck is external to the
shielded volume.
[0109] A27. The shielded probe system of any of paragraphs A1-A26,
wherein the translation stage is external to the shielded
volume.
[0110] A28. The shielded probe system of any of paragraphs A1-A27,
wherein the isolation structure is external to the shielded
volume.
[0111] A29. The shielded probe system of any of paragraphs A1-A28,
wherein the isolation structure is formed from an electrically
insulating material.
[0112] A30. The shielded probe system of any of paragraphs A1-A29,
wherein the isolation structure is formed from a thermally
insulating material.
[0113] A31. The shielded probe system of any of paragraphs A1-A30,
wherein the isolation structure forms a portion of the thermal
shielding structure.
[0114] A32. The shielded probe system of any of paragraphs A1-A31,
wherein the isolation structure extends between at least a portion
of the electrically conductive shielding structure and the
translation stage.
[0115] A33. The shielded probe system of any of paragraphs A1-A32,
wherein the isolation structure spatially separates the
electrically conductive shielding structure from the translation
stage.
[0116] A34. The shielded probe system of any of paragraphs A1-A33,
wherein the isolation structure is operatively attached to the
stage surface of the translation stage.
[0117] A35. The shielded probe system of any of paragraphs A1-A34,
wherein the isolation structure is operatively attached to the
electrically conductive shielding structure.
[0118] A36. The shielded probe system of any of paragraphs A1-A35,
wherein the thermal shielding structure is formed from a/the
thermally insulating material.
[0119] A37. The shielded probe system of any of paragraphs A1-A36,
wherein the thermal shielding structure surrounds at least a
portion of the electrically conductive shielding structure.
[0120] A38. The shielded probe system of paragraph A37, wherein the
at least a portion of the electrically conductive shielding
structure includes an external periphery of a/the electrically
conductive peripheral shield.
[0121] A39. The shielded probe system of paragraph A38, wherein the
thermal shielding structure is spaced-apart from the external
periphery of the electrically conductive peripheral shield.
[0122] A40. The shielded probe system of paragraph A38, wherein the
thermal shielding structure is in direct physical contact with the
external periphery of the electrically conductive peripheral
shield.
[0123] A41. The shielded probe system of any of paragraphs A1-A40,
wherein the thermal shielding structure extends between at least a
portion of the electrically conductive shielding structure and at
least a portion of the enclosure.
[0124] A42. The shielded probe system of any of paragraphs A1-A41,
wherein the thermal shielding structure extends between the
temperature-controlled chuck and the translation stage.
[0125] A43. The shielded probe system of any of paragraphs A1-A42,
wherein the thermal shielding structure is operatively attached to
the stage surface of the translation stage.
[0126] A44. The shielded probe system of any of paragraphs A1-A43,
wherein the thermal shielding structure is operatively attached to
the substrate-supporting stack.
[0127] A45. The shielded probe system of any of paragraphs A1-A44,
wherein the enclosure is an electrically conductive enclosure.
[0128] A46. The shielded probe system of paragraph A45, wherein the
shielded probe system further includes a shield conductor that is
in electrical communication with the enclosure and configured to at
least one of: [0129] (i) maintain the enclosure at a shield
potential; and [0130] (ii) ground the enclosure.
[0131] A47. The shielded probe system of paragraph A46, wherein the
shielded probe system further includes a shield potential generator
configured to generate the shield potential.
[0132] A48. The shielded probe system of any of paragraphs A1-A47,
wherein the shielded probe system further includes a guard
conductor that is in electrical communication with the electrically
conductive shielding structure and configured to at least one
of:
[0133] (i) maintain the electrically conductive shielding structure
at a guard potential; and
[0134] (ii) ground the electrically conductive shielding
structure.
[0135] A49. The shielded probe system of paragraph A48, wherein the
shielded probe system further includes a guard potential generator
configured to generate the guard potential.
[0136] A50. The shielded probe system of any of paragraphs A48-A49,
when dependent upon paragraph A46, wherein the guard potential is
different from a/the shield potential of the enclosure.
[0137] A51. The shielded probe system of any of paragraphs A48-A49,
when dependent upon paragraph A46, wherein the guard potential is
equal to the shield potential.
[0138] A52. The shielded probe system of any of paragraphs A48-A51,
wherein the probe system further includes a switching structure
configured to selectively apply the guard potential to the guard
conductor and to selectively ground the guard conductor.
[0139] A53. The shielded probe system of any of paragraphs A1-A52,
wherein the shielded probe system further includes an environmental
control assembly configured to provide a purge gas stream to the
shielded volume to regulate a chemical composition of a testing
environment that extends within the shielded volume.
[0140] A54. The shielded probe system of paragraph A53, wherein the
environmental control assembly includes a purge gas conduit
configured to provide the purge gas stream to the shielded
volume.
[0141] A55. The shielded probe system of any of paragraphs A53-A54,
wherein the purge gas stream includes at least one of:
[0142] (i) a dry, or at least substantially dry, purge gas
stream;
[0143] (ii) a low humidity purge gas stream;
[0144] (iii) an inert purge gas stream; and
[0145] (iv) an oxygen-free, or at least substantially oxygen-free,
purge gas stream.
[0146] A56. The shielded probe system of any of paragraphs A53-A55,
wherein the environmental control assembly further includes a purge
gas source configured to generate the purge gas stream.
[0147] A57. The shielded probe system of any of paragraphs A53-A56,
wherein the purge gas stream is a first purge gas stream, and
further wherein the environmental control assembly is configured to
provide a second purge gas stream to a portion of the enclosure
volume that is external to the shielded volume.
[0148] A58. The shielded probe system of any of paragraphs A54-A57,
wherein the purge gas conduit is a first purge gas conduit, and
further wherein the environmental control assembly includes a
second purge gas conduit configured to provide the second purge gas
stream to the portion of the enclosure volume that is external to
the shielded volume.
[0149] A59. The shielded probe system of any of paragraphs A1-A58,
wherein the temperature-controlled chuck is configured to regulate
a temperature of the substrate over a test temperature range.
[0150] A60. The shielded probe system of paragraph A59, wherein the
test temperature range extends over at least 100 degrees Celsius,
at least 150 degrees Celsius, at least 200 degrees Celsius, at
least 250 degrees Celsius, at least 300 degrees Celsius, at least
350 degrees Celsius, at least 400 degrees Celsius, at least 450
degrees Celsius, or at least 500 degrees Celsius.
[0151] A61. The shielded probe system of any of paragraphs A1-A60,
wherein the temperature-controlled chuck includes an electrically
conductive upper chuck layer.
[0152] A62. The shielded probe system of paragraph A61, wherein the
shielded probe system further includes a/the guard conductor that
is in electrical communication with the electrically conductive
upper chuck layer and configured to maintain the electrically
conductive upper chuck layer at one of:
[0153] (i) a/the shield potential; and
[0154] (ii) a/the guard potential.
[0155] A63. The shielded probe system of any of paragraphs A61-A62,
wherein the electrically conductive upper chuck layer is in
electrical communication, and optionally in direct electrical
communication, with at least a portion of the electrically
conductive shielding structure.
[0156] A64. The shielded probe system of any of paragraphs A61-A63,
wherein the substrate-supporting stack further includes a lower
electrically insulating layer that extends between the electrically
conductive upper chuck layer and at least a portion of the
electrically conductive shielding structure.
[0157] A65. The shielded probe system of paragraph A64, wherein the
lower electrically insulating layer is a thermally conductive lower
electrically insulating layer configured to facilitate thermal
exchange between the temperature-controlled chuck and the
electrically conductive support surface.
[0158] A66. The shielded probe system of any of paragraphs A1-A65,
wherein the substrate-supporting stack further includes an
electrically conductive upper stack layer that defines the
electrically conductive support surface.
[0159] A67. The shielded probe system of paragraph A66, wherein the
electrically conductive upper stack layer is at least one of:
[0160] (i) thermally conductive; and
[0161] (ii) metallic.
[0162] A68. The shielded probe system of any of paragraphs A66-A67,
wherein the electrically conductive upper stack layer includes a
vacuum distribution manifold configured to apply a retention vacuum
to the electrically conductive support surface to retain the
substrate on the electrically conductive support surface.
[0163] A69. The shielded probe system of any of paragraphs A66-A68,
wherein the substrate-supporting stack further includes an upper
electrically insulating layer that extends between the
temperature-controlled chuck and the electrically conductive upper
stack layer.
[0164] A70. The shielded probe system of paragraph A69, wherein the
upper electrically insulating layer further extends between the
electrically conductive upper stack layer and at least a portion of
the electrically conductive shielding structure.
[0165] A71. The shielded probe system of any of paragraphs A69-A70,
wherein the upper electrically insulating layer is a thermally
conductive upper electrically insulating layer configured to
facilitate thermal exchange between the temperature-controlled
chuck and the electrically conductive upper stack layer.
[0166] A72. The shielded probe system of any of paragraphs A1-A71,
wherein the enclosure is at least one of an electrically conductive
enclosure and a metallic enclosure.
[0167] A73. The shielded probe system of any of paragraphs A1-A72,
wherein the enclosure is configured to shield the electrically
conductive support surface from electromagnetic radiation that is
generated external to the enclosure volume.
[0168] A74. The shielded probe system of any of paragraphs A1-A72,
wherein the enclosure is formed from an electromagnetically
shielding material.
[0169] A75. The shielded probe system of any of paragraphs A1-A74,
wherein the enclosure is configured to thermally insulate the
electrically conductive support surface from an ambient environment
that surrounds the enclosure.
[0170] A76. The shielded probe system of any of paragraphs A1-A75,
wherein a ratio of a volume of the shielded volume to a volume of
the enclosure volume is at least one of:
[0171] (i) at least 0.001, at least 0.005, at least 0.01, at least
0.05, at least 0.1, at least 0.15, at least 0.2, or at least 0.25;
and
[0172] (ii) at most 0.5, at most 0.4, at most 0.3, at most 0.25, at
most 0.2, at most 0.15, or at most 0.1.
[0173] A77. The shielded probe system of any of paragraphs A1-A76,
wherein the translation stage is configured to operatively
translate the substrate-supporting stack, the isolation structure,
the thermal shielding structure, and at least a portion of the
electrically conductive shielding structure relative to the
enclosure along a first axis and along a second axis that is
perpendicular to the first axis.
[0174] A78. The shielded probe system of paragraph A77, wherein the
first axis and the second axis both are parallel, or at least
substantially parallel, to the electrically conductive support
surface.
[0175] A79. The shielded probe system of any of paragraphs A77-A78,
wherein the translation stage further is configured to operatively
translate the substrate-supporting stack, the isolation structure,
the thermal shielding structure, and at least a portion of the
electrically conductive shielding structure relative to the
enclosure along a third axis that is perpendicular, or at least
substantially perpendicular, to the electrically conductive support
surface.
[0176] A80. The shielded probe system of any of paragraphs A1-A79,
wherein the translation stage is configured to operatively rotate
the substrate-supporting stack, the isolation structure, the
thermal shielding structure, and at least a portion of the
electrically conductive shielding structure about a rotational
axis.
[0177] A81. The shielded probe system of paragraph A80, wherein the
rotational axis is perpendicular to the electrically conductive
support surface.
[0178] A82. The shielded probe system of any of paragraphs A80-A81,
wherein the rotational axis is a/the third axis.
[0179] A83. The shielded probe system of any of paragraphs A1-A82,
wherein the shielded probe system further includes a contacting
assembly including a plurality of probe tips, wherein each of the
plurality of probe tips is configured to at least one of:
[0180] (i) provide a corresponding test signal to the DUT; and
[0181] (ii) receive a corresponding resultant signal from the
DUT.
[0182] A84. The shielded probe system of paragraph A83, wherein the
test signal includes a direct current test signal.
[0183] A85. The shielded probe system of any of paragraphs A83-A84,
wherein the test signal includes an alternating current test
signal.
[0184] A86. The shielded probe system of any of paragraphs A83-A85,
wherein the shielded probe system further includes a platen that
extends above the electrically conductive support surface and is
configured to support the contacting assembly.
[0185] A87. The shielded probe system of any of paragraphs A83-A86,
wherein the contacting assembly includes a probe head assembly.
[0186] A88. The shielded probe system of any of paragraphs A83-A87,
wherein the contacting assembly includes at least one probe arm,
and optionally a plurality of probe arms.
[0187] A89. The shielded probe system of any of paragraphs A83-A88,
wherein the shielded probe system further includes a signal
generation and analysis assembly configured to provide the
corresponding test signal to the DUT and receive the corresponding
resultant signal from the DUT.
INDUSTRIAL APPLICABILITY
[0188] The probe systems disclosed herein are applicable to the
semiconductor manufacturing and test industries.
[0189] It is believed that the disclosure set forth above
encompasses multiple distinct inventions with independent utility.
While each of these inventions has been disclosed in its preferred
form, the specific embodiments thereof as disclosed and illustrated
herein are not to be considered in a limiting sense as numerous
variations are possible. The subject matter of the inventions
includes all novel and non-obvious combinations and subcombinations
of the various elements, features, functions and/or properties
disclosed herein. Similarly, where the claims recite "a" or "a
first" element or the equivalent thereof, such claims should be
understood to include incorporation of one or more such elements,
neither requiring nor excluding two or more such elements.
[0190] It is believed that the following claims particularly point
out certain combinations and subcombinations that are directed to
one of the disclosed inventions and are novel and non-obvious.
Inventions embodied in other combinations and subcombinations of
features, functions, elements and/or properties may be claimed
through amendment of the present claims or presentation of new
claims in this or a related application. Such amended or new
claims, whether they are directed to a different invention or
directed to the same invention, whether different, broader,
narrower, or equal in scope to the original claims, are also
regarded as included within the subject matter of the inventions of
the present disclosure.
* * * * *