U.S. patent application number 15/483520 was filed with the patent office on 2017-07-27 for sputter source for semiconductor process chambers.
The applicant listed for this patent is APPLIED MATERIALS, INC.. Invention is credited to TZA-JING GUNG, PRASHANTH KOTHNUR, ANANTHA K. SUBRAMANI, HANBING WU.
Application Number | 20170211175 15/483520 |
Document ID | / |
Family ID | 51522600 |
Filed Date | 2017-07-27 |
United States Patent
Application |
20170211175 |
Kind Code |
A1 |
SUBRAMANI; ANANTHA K. ; et
al. |
July 27, 2017 |
SPUTTER SOURCE FOR SEMICONDUCTOR PROCESS CHAMBERS
Abstract
Embodiments of a sputter source for semiconductor process
chambers are provided herein. In some embodiments, a sputter source
for a semiconductor process chamber may include: a target
comprising a magnetic material to be deposited on a substrate, the
magnetic material including a front surface where material is to be
sputtered and an opposing back surface; and an outer magnet
disposed proximate a back surface of the target and arranged
symmetrically with respect to a central axis of the target, wherein
the target has an annular groove formed in the back surface of the
target disposed proximate the outer magnet to reduce a magnetic
permeability of a region of the target proximate the outer magnet,
wherein the groove is an unfilled v-shaped groove having an inner
angle greater than 90 degrees.
Inventors: |
SUBRAMANI; ANANTHA K.; (SAN
JOSE, CA) ; GUNG; TZA-JING; (SAN JOSE, CA) ;
KOTHNUR; PRASHANTH; (San Jose, CA) ; WU; HANBING;
(Millbrae, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
APPLIED MATERIALS, INC. |
Santa Clara |
CA |
US |
|
|
Family ID: |
51522600 |
Appl. No.: |
15/483520 |
Filed: |
April 10, 2017 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13836328 |
Mar 15, 2013 |
9620339 |
|
|
15483520 |
|
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
C23C 14/3414 20130101;
H01J 37/3402 20130101; H01J 37/3426 20130101; C23C 14/35 20130101;
H01J 37/342 20130101; H01J 37/3405 20130101; H01J 37/34 20130101;
C23C 14/3407 20130101; H01J 37/345 20130101; H01J 37/3423
20130101 |
International
Class: |
C23C 14/34 20060101
C23C014/34; C23C 14/35 20060101 C23C014/35; H01J 37/34 20060101
H01J037/34 |
Claims
1. A sputter source for a semiconductor process chamber,
comprising: a target comprising a magnetic material to be deposited
on a substrate, the magnetic material including a front surface
where material is to be sputtered and an opposing back surface,
wherein the target includes a central axis passing through and
normal to the front and back surfaces of the target; and an outer
magnet disposed proximate a back surface of the target and arranged
axisymmetrically with respect to the central axis of the target,
wherein the target has an annular groove formed in the back surface
of the target disposed proximate the outer magnet to reduce a
magnetic permeability of a region of the target proximate the outer
magnet, wherein the groove is an unfilled v-shaped groove having an
inner angle greater than 90 degrees.
2. The sputter source of claim 1, wherein the outer magnet is
disposed proximate the back surface of the target such that at
least a portion of a magnetic field formed by the outer magnet has
an orientation that is substantially perpendicular to the back
surface of the target.
3. The sputter source of claim 1, further comprising: an inner
magnet disposed proximate the back surface of the target proximate
the central axis of the target.
4. The sputter source of claim 3, wherein the inner magnet is a
ring shaped magnet disposed symmetrically about the central axis of
the target.
5. The sputter source of claim 3, further comprising: a magnetic
backing plate disposed on a side of the inner magnet and outer
magnet opposite the target.
6. The sputter source of claim 1, further comprising: a backing
plate coupled to the back surface of the target.
7. The sputter source of claim 6, wherein the backing plate
comprises one or more channels formed within the backing plate
configured to flow a temperature control fluid through the backing
plate to control a temperature of the target.
8. The sputter source of claim 6, further comprising a cooling
plate disposed between the backing plate and the outer magnet, the
cooling plate having one or more channels formed within the cooling
plate configured to flow a temperature control fluid through the
cooling plate to control a temperature of the target.
9. The sputter source of claim 1, wherein the outer magnet
comprises a plurality of outer magnets symmetrically disposed about
the central axis of the target.
10-20. (canceled)
21. The sputter source of claim 1, wherein the annular groove is
disposed beneath the outer magnet.
22. A sputter source for a semiconductor process chamber,
comprising: a target comprising a magnetic material to be deposited
on a substrate, the magnetic material including a front surface
where material is to be sputtered and an opposing back surface; an
annular outer magnet disposed proximate a back surface of the
target and axisym metrically arranged with respect to a central
axis of the target; and an annular groove formed in the back
surface of the target disposed beneath the outer magnet, wherein
the groove is an unfilled v-shaped groove having an inner angle
greater than 90 degrees.
23. The sputter source of claim 22, further comprising: a backing
plate coupled to the back surface of the target.
24. The sputter source of claim 22, further comprising: a top plate
disposed atop the outer magnet; and a bottom ring disposed beneath
the outer magnet.
25. The sputter source of claim 22, wherein the outer magnet
comprises a plurality of outer magnets axisymmetrically disposed
about the central axis of the target.
26. The sputter source of claim 22, further comprising: an inner
magnet disposed proximate the back surface of the target proximate
the central axis of the target.
27. The sputter source of claim 22, wherein the annular groove is
the only annular groove formed in the back surface of the
target.
28. A sputter source for a semiconductor process chamber,
comprising: a target comprising a magnetic material to be deposited
on a substrate, the magnetic material including a front surface
where material is to be sputtered and an opposing back surface,
wherein the target includes a central axis passing through and
normal to the front and back surfaces of the target; a backing
plate coupled to the back surface of the target; an inner magnet
disposed proximate the back surface of the target proximate the
central axis of the target, wherein the inner magnet is a ring
shaped magnet disposed axisym metrically about the central axis of
the target; a plurality of outer magnets disposed proximate a back
surface of the target and axisym metrically arranged in a ring
about the central axis of the target; and an annular groove formed
in the back surface of the target disposed beneath the plurality of
outer magnets, wherein the groove is an unfilled v-shaped groove
having an inner angle greater than 90 degrees.
29. The sputter source of claim 28, further comprising: a top plate
disposed atop the plurality of outer magnets and the inner magnet;
a bottom plate disposed beneath the inner magnet; and a bottom ring
disposed beneath the plurality of outer magnets.
30. The sputter source of claim 28, wherein the annular groove is
the only annular groove formed in the back surface of the
target.
31. The sputter source of claim 28, further comprising: a first
spacer disposed between the plurality of outer magnets and the
backing plate; and a second spacer disposed between the inner
magnet and the backing plate.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a divisional of co-pending U.S. patent
application Ser. No. 13/836,328, filed Mar. 15, 2013, which is
herein incorporated by reference in its entirety.
FIELD
[0002] Embodiments of the present invention generally relate to
semiconductor processing equipment.
BACKGROUND
[0003] Conventional sputter sources utilized in depositing magnetic
materials typically include a target fabricated from the magnetic
material to be deposited. However, the inventors have observed that
such magnetic materials may create a path of least resistance for
magnetic fields produced by other magnetic components of the
process chamber (e.g., magnets used to maintain a plasma), thereby
affecting magnetic fields formed within the process chamber and
creating non-uniformities within a plasma formed within the process
chamber. To offset this, the thickness of the target may be reduced
to minimize the effect on the magnetic field. However, the
inventors have observed that because the target is consumed during
sputtering, the reduced thickness of the target leads to a
shortened target life.
[0004] Thus, the inventors have provided an improved sputter source
for semiconductor process chambers.
SUMMARY
[0005] Embodiments of a sputter source for semiconductor process
chambers are provided herein. In some embodiments, a sputter source
for a semiconductor process chamber may include: a target
comprising a magnetic material to be deposited on a substrate, the
magnetic material including a front surface where material is to be
sputtered and an opposing back surface; and an outer magnet
disposed proximate a back surface of the target and arranged
symmetrically with respect to a central axis of the target, wherein
the target has an annular groove formed in the back surface of the
target disposed proximate the outer magnet to reduce a magnetic
permeability of a region of the target proximate the outer magnet,
wherein the groove is an unfilled v-shaped groove having an inner
angle greater than 90 degrees.
[0006] Other and further embodiments of the present invention are
described below.
BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Embodiments of the present invention, briefly summarized
above and discussed in greater detail below, can be understood by
reference to the illustrative embodiments of the invention depicted
in the appended drawings. It is to be noted, however, that the
appended drawings illustrate only typical embodiments of this
invention and are therefore not to be considered limiting of its
scope, for the invention may admit to other equally effective
embodiments.
[0008] FIG. 1 depicts a sputter source for a semiconductor process
chamber in accordance with some embodiments of the present
invention.
[0009] FIG. 2 depicts a sputter source for a semiconductor process
chamber in accordance with some embodiments of the present
invention.
[0010] FIG. 3 depicts a semiconductor process chamber suitable for
use with a sputter source in accordance with some embodiments of
the present invention.
[0011] To facilitate understanding, identical reference numerals
have been used, where possible, to designate identical elements
that are common to the figures. The figures are not drawn to scale
and may be simplified for clarity. It is contemplated that elements
and features of one embodiment may be beneficially incorporated in
other embodiments without further recitation.
DETAILED DESCRIPTION
[0012] Embodiments of sputter sources for semiconductor process
chambers are provided herein. In at least some embodiments, the
inventive sputter source may advantageously provide a target
fabricated from a magnetic material having a longer useful life
while reducing instances of adversely affecting magnetic fields
within the process chamber formed by other process chamber
components, as compared to conventionally used magnetic material
sputter sources.
[0013] FIG. 1 depicts a sputter source for a semiconductor process
chamber in accordance with some embodiments of the present
invention. In some embodiments, the sputter source 100 may
generally comprise a target 102 and an outer magnet 110 disposed
proximate a back surface 124 of the target 102.
[0014] The outer magnet 110 produces a magnetic field to, for
example, maintain and/or shape a plasma formed in a process chamber
to facilitate a desired sputtering of material from the target 102
and subsequent deposition of the material atop a substrate disposed
within the process chamber (e.g., the substrate 304 disposed in
process chamber 300 described below with respect to FIG. 3). The
outer magnet 110 may be any type of magnet suitable to form the
desired magnetic field, for example such as a permanent magnet or
an electromagnet. In addition, the outer magnet 110 may be arranged
in any manner suitable to form the desired magnetic field. For
example, in some embodiments, the outer magnet 110 may be annularly
disposed symmetrically about a central axis 106 of the target 102.
In such embodiments, the outer magnet 110 is disposed proximate the
back surface 124 of the target 102 such that at least a portion of
a magnetic field formed by the outer magnet 110 has an orientation
that is substantially perpendicular to the back surface 124 of the
target 102. Although described as an outer magnet 110 herein, the
outer magnet 110 may comprise any amount of magnets suitable to
produce a magnetic field having a desired shape and magnitude. For
example, in some embodiments, the outer magnet 110 may comprise a
plurality of magnets symmetrically disposed about the central axis
106 of the target 102, such as shown in FIG. 1.
[0015] In some embodiments, the sputter source 100 may include
additional magnets, for example such as an inner magnet 114
disposed proximate the central axis 106 of the target 102. When
present, the inner magnet 114 may facilitate shaping the magnetic
field formed by the outer magnet 110. The inner magnet 114 may be
any type of magnet suitable to form the desired magnetic field, for
example such as a permanent magnet or an electromagnet.
[0016] The target 102 comprises a front surface 126 having a
material to be deposited on a substrate and an opposing back
surface 124, wherein a groove 104 is formed in the back surface 124
of the target 102. In some embodiments, the groove 104 is unfilled
(e.g., no solid or liquid material is disposed within the groove
104). The target 102 may be fabricated from any suitable magnetic
material suitable to be deposited on a substrate during a
sputtering process. For example, in some embodiments, the target
102 may be fabricated from a nickel-iron alloy (NiFe), cobalt-iron
alloy (CoFe), cobalt-iron-boron alloy (CoFeB), cobalt (Co), or the
like.
[0017] The inventors have observed that providing the groove 104 in
the back surface 124 of target 102 forms an area that is thinner
than the surrounding portions of the target 102, thereby lowering
the magnetic permeability of the target 102 proximate the groove
104. Lowering the magnetic permeability of the target 102 reduces
or eliminates any adverse effect on a magnetic field formed by the
outer magnet 110 that would otherwise be caused by a target 102
fabricated from a magnetic material not having the groove 104. In
addition, the inventors have observed that the groove 104 may
contain the magnetic field within an area 128 disposed within the
groove 104, thereby substantially limiting the sputtering of the
material from the target 102 to the area 128. As such, the target
102 may be fabricated such that area 128 within the groove 124 has
a higher thickness as compared to conventionally utilized targets,
thus providing a target 102 having a longer life as compared to
conventional targets. For example, in some embodiments, the target
102 may have a thickness of up to about 0.75 inches.
[0018] The groove 104 may be formed having any shape and size
suitable to sufficiently reduce the magnetic permeability of the
target 102 in a desired location about the target 102, as discussed
above. For example, in some embodiments, the groove 104 is a
v-shaped groove having an inner angle 132 of at least 90 degrees.
In some embodiments, the groove 104 may have a depth of about 0.02
inches to about 0.1 inch, or in some embodiments, about 0.12
inches. The groove 104 may be positioned in any manner suitable to
reduce the magnetic permeability of the target 102 in a desired
location. For example, in some embodiments, the groove 104 may be
annularly disposed about the back surface 124 of the target 102 and
positioned such that when the target 102 is coupled to the sputter
source 100, the groove 104 is disposed in an area proximate the
outer magnet 110 (e.g., beneath the outer magnet 110, such as shown
in FIG. 1).
[0019] In some embodiments, a backing plate 108 may be disposed
between the outer magnet 110 and the target 102 to support the
target 102 and/or couple the target 102 to the sputter source 100.
In some embodiments, the backing plate 108 may comprise a
conductive material, such as copper-zinc, copper-chrome, or the
same material as the target 102, such that RF and DC power can be
coupled to the target 102 via the backing plate 108. Alternatively,
the backing plate 108 may be non-conductive and may include
conductive elements (not shown) such as electrical feedthroughs or
the like. In some embodiments, the backing plate 108 may comprise
one or more temperature control mechanisms to control a temperature
of the sputter source 100 and/or target 102. For example, in some
embodiments, the backing plate 108 may include one or more channels
formed within the backing plate 108 to flow a temperature control
fluid through the backing plate 108.
[0020] In some embodiments, the sputter source 100 may comprise an
enclosure 130 surrounding a plurality of the outer magnets 110. In
such embodiments, the backing plate 108 may be coupled to the
enclosure 130 to facilitate coupling the target 102 to the sputter
source 100. Although described as two components, the backing plate
108 and enclosure 130 may be fabricated from a single piece of
material, thereby providing a unitary design comprising both the
backing plate 108 and enclosure 130.
[0021] In some embodiments, the outer magnet 110 and the inner
magnet 114 may be disposed between a top plate 112 and a bottom
ring 120 and bottom plate 122 to secure the outer magnet 110 and
inner magnet 114 in a desired position within the sputter source
100. In some embodiments, for example, where the sputter source 100
is retrofit into a preexisting enclosure (e.g., enclosure 130), a
plurality of spacers (two spacers 116, 118 shown) may be utilized
to securely fit the outer magnet 110 and inner magnet 114 within
the enclosure 130.
[0022] Although shown as a plate in FIG. 1, the target 102 may have
any shape suitable to sputter material for a desired application.
For example, referring to FIG. 2, in some embodiments, the target
202 may comprise a ring 242 having a top 232 and a bottom 244 and a
lip 236 that extends radially inward from the ring 242 coupled to
the top 232 of the ring 242 (e.g., having a substantially "L"
shaped cross section). In such embodiments, a first groove 218 may
be formed in a back surface 240 of the ring 242 and a second groove
216 may be formed in a back surface 238 of the lip 236. In some
embodiments, the lip 236 may be substantially perpendicular to the
ring 242.
[0023] In some embodiments, a first set of outer magnets 248 may be
disposed proximate the back surface 240 of the ring 242 and a
second set of outer magnets 246 may be disposed proximate the back
surface 238 of the lip 236. In some embodiments, each of the first
set of outer magnets 248 and the second set of outer magnets 246
may be disposed symmetrically with respect to a central axis 234 of
the target 202.
[0024] Each of the first set of outer magnets 248 and second set of
outer magnets 246 may comprise any number of magnets suitable to
form a desired magnetic field. For example, in some embodiments,
the first set of outer magnets 248 may comprise two ring shaped
magnets 208, 210 that extend peripherally about the back surface
240 of the ring 242. In such embodiments, each of the two ring
shaped magnets 208, 210 may be oriented such that opposing poles of
each of the two ring shaped magnets 208, 210 are adjacent to one
another, thereby forming a first magnetic loop 241, wherein at
least a portion of the first magnetic loop 241 is perpendicular to
the ring 242. In some embodiments, the second set of outer magnets
246 may comprise two ring shaped magnets 212, 214 disposed
annularly proximate the back surface 238 of the lip 236. In such
embodiments, each of the two ring shaped magnets 212, 214 may be
oriented such that opposing poles of each of the two ring shaped
magnets 212, 214 are adjacent to one another, thereby forming a
second magnetic loop 260, wherein at least a portion of the second
magnetic loop 241 is perpendicular to the lip 236. In some
embodiments, a magnetic backing plate 230 may be disposed atop the
set outer magnets 248 and second set of outer magnets 246 to
facilitate forming the first magnetic loop 241 and the second
magnetic loop 260. When arranged as described in the above
embodiments, the first magnetic loop 241 and the second magnetic
loop 260 form a confined magnetic field 228 that extends away from
the target 202 and towards a substrate disposed beneath the sputter
source 100. The inventors have observed that the aforementioned
confinement of the magnetic field may facilitate ionization of
process gas species within the process chamber to form at least a
portion of the plasma, thereby offsetting a low power density and
low plasma density caused by a large area of the first set of outer
magnets 248 and second set of outer magnets 246.
[0025] In some embodiments, each of the first groove 218 and second
groove 216 may be unfilled (e.g., no solid or liquid material is
disposed within the first groove 218 and second groove 216). The
inventors have observed that providing the first groove 218 and
second groove 216 lowers the magnetic permeability of the target
202 proximate each of the first groove 218 and the second groove
216 thereby reducing or eliminating any adverse effect on a
magnetic field (e.g., magnetic field 228) formed by the outer
magnet 110 that would otherwise be caused by a target 202
fabricated from a magnetic material not having the first groove 218
and second groove 216, for example, such as described above with
respect to the groove 104 formed in the back surface 124 of the
target 102 shown in FIG. 1. In addition, the inventors have
observed that the first groove 218 and second groove 216 may
contain the magnetic field 228 within an area 262 disposed between
the first groove 218 and second groove 216, thereby substantially
limiting the sputtering of the material from the target 202 to the
area 262. As such, the target 202 may be fabricated such that the
area 262 disposed between the first groove 218 and second groove
216 has a higher thickness as compared to conventionally utilized
targets, thus providing a target 202 having a longer life as
compared to conventional targets. For example, in some embodiments,
the area 262 disposed between the first groove 218 and second
groove 216 may have a thickness of up to about 0.75 inches. In
addition, the inventors have observed that material that is
sputtered outside of the area 262 (e.g., from the ring 242 and lip
236) and not directed towards the substrate may redeposit on the
ring 242 and/or lip 236, thereby extending the life of the target
202.
[0026] The first groove 218 and second groove 216 may be formed
having any shape and size suitable to sufficiently reduce the
magnetic permeability of the target 202 in a desired location about
the target 202, for example, such as the sizes and shapes of the
groove 104 discussed above. In addition, the first groove 218 and
second groove 216 may be positioned in any manner suitable to
reduce the magnetic permeability of the target 202 in a desired
location. For example, in some embodiments, the first groove 218
and second groove 216 may be positioned such that when the target
202 is coupled to the sputter source 100, the first groove 218 and
the second groove 216 is disposed proximate the first set of outer
magnets 248 and second set of outer magnets 246, respectively, such
as shown in FIG. 2. In such embodiments, the first groove 218 and
second groove 216 may be positioned such that when the target 202
is coupled to the sputter source 100, the first groove 218 and the
second groove 216 is disposed directly beneath the first set of
outer magnets 248 and second set of outer magnets 246,
respectively.
[0027] In some embodiments, a backing plate 204 may be disposed
between the outer magnets (the first set of outer magnets 248 and
second set of outer magnets) and the target 202 to support the
target 202 and/or couple the target 202 to the sputter source 100.
The backing plate 204 may be fabricated from any suitable material,
for example, such as the materials described above with respect to
the backing plate 108 of FIG. 1. In some embodiments, a cooling
jacket 206 may be disposed between the outer magnets (the first set
of outer magnets 248 and second set of outer magnets) and the
backing plate 204 to facilitate control over a temperature of the
target 202. In such embodiments, the cooling jacket 206 may include
one or more channels formed within the cooling jacket 206 to flow a
temperature control fluid provided by a fluid source 220 through
the backing plate 108. In some embodiments, a total thickness of
the target 202, cooling jacket 206 and backing plate 204 may be
adjusted to maximize the structural strength and life of the target
202. For example, in some embodiments, the target 202, cooling
jacket 206 and backing plate 204 may have a combined thickness of
about 1 inches to about 2 inches.
[0028] In some embodiments, the sputter source 100 may include
additional magnets, for example such as an inner magnet 226
disposed symmetrically about the central axis 234 of the target
202. When present, the inner magnet 226 may facilitate shaping the
magnetic field 228 formed by the first set of outer magnets 248 and
second set of outer magnets 246. The inner magnet 226 may be any
type of magnet suitable to form the desired magnetic field, for
example such as a permanent magnet or an electromagnet. In some
embodiments, the inner magnet 226 may be supported by a plate 222.
In some embodiments, the plate 222 may be supported by a portion of
the target 202. In such embodiments, a nonconductive spacer 224 may
be disposed between the plate 222 and the target 202 to
electrically isolate the plate 222 from the target 202
[0029] FIG. 3 depicts a process chamber suitable for use with a
sputter source in accordance with some embodiments of the present
invention. The process chamber may be any type of process chamber
suitable for semiconductor processing that utilizes a sputter
source. Examples of suitable process chambers include the ALPS.RTM.
Plus and SIP ENCORE.RTM. PVD process chambers, both commercially
available from Applied Materials, Inc., of Santa Clara, Calif.
Other process chambers from Applied Materials, Inc. or other
manufactures may also benefit from the inventive method disclosed
herein.
[0030] In some embodiments, the process chamber 300 may generally
include a chamber body 320 having a substrate support pedestal 302
for receiving a substrate 304 thereon, and a sputter source 100
(e.g., sputter source 100 described above) having a target 306. The
substrate support pedestal 302 may be located within a grounded
enclosure wall, which may be the chamber wall 308 (as shown) or a
grounded shield. In some embodiments, the sputter source 100 may be
supported on a grounded conductive aluminum adapter (adapter) 342
through a dielectric isolator 344.
[0031] Any number of power sources may be utilized to provide power
to the target 306 to accommodate for a particular application or
process performed in the process chamber 300. For example, in some
embodiments, a DC power source 326 and RF power source 324 may
provide DC power and RF power, respectively, to the target 306 via
a source distribution plate (not shown), such as the backing plate
108 described above. In such embodiments, the DC power source 326
may be utilized to apply a negative voltage, or bias, to the target
306. In some embodiments, RF energy supplied by the RF power source
324 may range in frequency from about 2 MHz to about 60 MHz, or,
for example, non-limiting frequencies such as 2 MHz, 13.56 MHz,
27.12 MHz, or 60 MHz can be used. In some embodiments, a plurality
of RF power sources may be provided (i.e., two or more) to provide
RF energy in a plurality of the above frequencies.
[0032] The substrate support pedestal 302 has a substrate support
surface 310 facing the principal surface of the target 306 and
supports the substrate 304 to be processed. The substrate support
pedestal 302 may support the substrate 304 in a processing volume
348 of the process chamber 300. The processing volume 348 is
defined as the region above the substrate support pedestal 302
during processing (for example, between the target 306 and the
substrate support pedestal 302 when in a processing position).
[0033] In some embodiments, the substrate support pedestal 302 may
be vertically movable through a bellows 350 connected to a bottom
chamber wall 352 to allow the substrate 304 to be transferred onto
the substrate support pedestal 302 through a load lock valve (not
shown) in the lower portion of processing the process chamber 300
and thereafter raised to one or more positions for processing
(e.g., as described above).
[0034] One or more processing gases may be supplied from a gas
source 354 through a mass flow controller 356 into the lower part
of the process chamber 300. An exhaust port 358 may be provided and
coupled to a pump (not shown) via a valve 360 for exhausting the
interior of the process chamber 300 and facilitating maintaining a
desired pressure inside the process chamber 300.
[0035] In some embodiments, one or more power sources (an RF power
source 362 and DC power source 364 shown) may be coupled to the
substrate support pedestal 302. When present, the RF power source
362 may be coupled to the substrate support pedestal 302 to induce
a negative DC bias on the substrate 304. In addition, in some
embodiments, a negative DC self-bias may form on the substrate 304
during processing.
[0036] In some embodiments, the process chamber 300 may further
include a process kit shield 374 connected to a ledge 376 of the
adapter 342. The adapter 342 in turn is sealed and grounded to the
chamber wall 308. Generally, the process kit shield 374 extends
downwardly along the walls of the adapter 342 and the chamber wall
308 downwardly to below an upper surface of the substrate support
pedestal 302 and returns upwardly until reaching an upper surface
of the substrate support pedestal 302 (e.g., forming a u-shaped
portion 384 at the bottom). Alternatively, the bottommost portion
of the process kit shield need not be a u-shaped portion 384 and
may have any suitable shape. A cover ring 386 rests on the top of
an upwardly extending lip 388 of the process kit shield 374. An
additional deposition ring (not shown) may be used to shield the
periphery of the substrate 304 from deposition.
[0037] In some embodiments, a magnet 390 may be disposed about the
process chamber 300 for selectively providing a magnetic field
between the substrate support pedestal 302 and the target 306. For
example, as shown in FIG. 3, the magnet 390 may be disposed about
the outside of the chamber wall 308 in a region just above the
substrate support pedestal 302. In some embodiments, the magnet 390
may be disposed additionally or alternatively in other locations,
such as adjacent the adapter 342. The magnet 390 may be an
electromagnet and may be coupled to a power source (not shown) for
controlling the magnitude of the magnetic field generated by the
electromagnet. When present, the magnet 390 may be configured to
provide a uniform magnetic field proximate the substrate 304 to
facilitate coercing the material sputtered from the target 306 in
desired orientation prior to, during, or subsequent to, deposition
of the material atop the substrate 304.
[0038] A controller 318 may be provided and coupled to various
components of the process chamber 300 to control the operation
thereof. The controller 318 includes a central processing unit
(CPU) 312, a memory 314, and support circuits 316. The controller
318 may control the process chamber 300 directly, or via computers
(or controllers) associated with particular process chamber and/or
support system components. The controller 318 may be one of any
form of general-purpose computer processor that can be used in an
industrial setting for controlling various chambers and
sub-processors. The memory, or computer readable medium, 314 of the
controller 318 may be one or more of readily available memory such
as random access memory (RAM), read only memory (ROM), floppy disk,
hard disk, optical storage media (e.g., compact disc or digital
video disc), flash drive, or any other form of digital storage,
local or remote. The support circuits 316 are coupled to the CPU
312 for supporting the processor in a conventional manner. These
circuits include cache, power supplies, clock circuits,
input/output circuitry and subsystems, and the like. One or more
processes may be stored in the memory 314 as software routine that
may be executed or invoked to control the operation of the process
chamber 300 in the manner described herein. The software routine
may also be stored and/or executed by a second CPU (not shown) that
is remotely located from the hardware being controlled by the CPU
312.
[0039] Thus, embodiments of a sputter source have been provided
herein. In at least some embodiments, the inventive sputter source
may advantageously reduce instances of adversely affecting magnetic
fields within the process chamber formed by other process chamber
components, as compared to conventionally used magnetic material
sputter sources.
[0040] While the foregoing is directed to embodiments of the
present invention, other and further embodiments of the invention
may be devised without departing from the basic scope thereof.
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