U.S. patent application number 14/978650 was filed with the patent office on 2017-06-22 for methods and devices for back end of line via formation.
This patent application is currently assigned to GLOBALFOUNDRIES Inc.. The applicant listed for this patent is GLOBALFOUNDRIES Inc.. Invention is credited to Sohan Singh MEHTA, Sunil Kumar SINGH, Ravi Prakash SRIVASTAVA.
Application Number | 20170178953 14/978650 |
Document ID | / |
Family ID | 59066366 |
Filed Date | 2017-06-22 |
United States Patent
Application |
20170178953 |
Kind Code |
A1 |
SINGH; Sunil Kumar ; et
al. |
June 22, 2017 |
METHODS AND DEVICES FOR BACK END OF LINE VIA FORMATION
Abstract
Back end of line via formation for semiconductor devices and
methods of fabricating the semiconductor devices. One method
includes, for instance: obtaining a wafer with a substrate and at
least one contact in the substrate; depositing at least one
lithography stack over the substrate; performing lithography to
pattern at least one via opening; depositing a block co-polymer
coating over the wafer into the at least one via opening;
performing an ashing to remove excess block co-polymer material and
form block co-polymer caps; and performing a thermal bake to
separate the block co-polymer caps into a first material and a
second material. An intermediate semiconductor device is also
disclosed.
Inventors: |
SINGH; Sunil Kumar;
(Mechanicville, NY) ; MEHTA; Sohan Singh;
(Saratoga Springs, NY) ; SRIVASTAVA; Ravi Prakash;
(Clifton Park, NY) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
GLOBALFOUNDRIES Inc. |
Grand Cayman |
|
KY |
|
|
Assignee: |
GLOBALFOUNDRIES Inc.
Grand Cayman
KY
|
Family ID: |
59066366 |
Appl. No.: |
14/978650 |
Filed: |
December 22, 2015 |
Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01L 23/5226 20130101;
H01L 21/76813 20130101; H01L 21/31144 20130101; H01L 21/76811
20130101; H01L 21/76817 20130101; H01L 21/76879 20130101; H01L
21/76808 20130101; H01L 21/76814 20130101; H01L 23/528
20130101 |
International
Class: |
H01L 21/768 20060101
H01L021/768; H01L 23/528 20060101 H01L023/528; H01L 23/522 20060101
H01L023/522 |
Claims
1. A method comprising: obtaining a wafer with a substrate and at
least one contact in the substrate; depositing a first lithography
stack over the substrate; performing a first lithography to pattern
at least one trench opening; depositing a second lithography stack
over the wafer; performing a second lithography to pattern at least
one via opening; depositing a block co-polymer coating over the
wafer into the at least one via opening; performing an ashing to
remove excess block co-polymer material and form block co-polymer
caps; performing a thermal bake to separate the block co-polymer
caps into a first material and a second material; etching to remove
the first material and form at least one smaller opening; and
performing a full etch to open the at least one trench opening and
the at least one via opening, wherein the at least one via opening
is formed through the at least one smaller opening.
2. The method of claim 1, wherein the at least one contact
comprises: at least one first contact; and at least one second
contact.
3. The method of claim 2, wherein the wafer further comprises: an
insulation layer deposited over the substrate; an interlayer
dielectric layer deposited over the insulation layer; a first
dielectric layer deposited over the insulation layer; a hard mask
layer deposited over the first dielectric layer; and a second
dielectric layer deposited over the hard mask layer.
4. The method of claim 3, wherein the wafer further comprises: at
least one first opening; and at least one second opening, wherein
the at least one first opening and the at least one second opening
extend from a top surface of the second dielectric layer, through
the second dielectric layer and a metal hard mask layer, and down
to the first dielectric layer.
5. The method of claim 4, wherein the second lithography stack is
deposited over the second dielectric layer and the second
lithography stack comprises: a spin-on-hardmask layer; a third
dielectric layer over the spin-on-hardmask layer; a bottom
anti-reflection coating layer over the third dielectric layer; and
a photoresist layer.
6. The method of claim 5, wherein the at least one via opening
extends through a portion of the spin-on-hardmask layer, the second
dielectric layer, the hard mask layer, the first dielectric layer,
and into a portion of the interlayer dielectric layer.
7. The method of claim 6, wherein the first material of the block
co-polymer caps is a polymethyl methacrylate.
8. The method of claim 7, wherein the second material of the block
co-polymer caps is polystyrene.
9. (canceled)
10. The method of claim 6, wherein the at least one via opening
aligns with and contacts a top surface of the at least one second
contact.
11. The method of claim 10, further comprising: removing the hard
mask layer; and depositing at least one metal layer over the wafer
and into the at least one trench opening and at least one via
opening.
12. The method of claim 11, wherein removing the hard mask layer
comprises: performing an EKC wet etch to strip the hard mask
layer.
13. An intermediate semiconductor device comprising: a substrate;
at least one first contact in the substrate; at least one second
contact in the substrate; and at least one block co-polymer cap
aligned with the at least one second contact.
14. The device of claim 13, further comprising: an insulation layer
deposited over the substrate and the at least one first and second
contacts; an interlayer dielectric layer deposited over the
insulation layer; and a first dielectric layer deposited over the
interlayer dielectric layer.
15. The device of claim 14, wherein the at least one block
co-polymer cap extends from a top surface of the device, through
the first dielectric layer, and into a portion of the interlayer
dielectric layer.
16. The device of claim 15, wherein the at least one block
co-polymer cap comprises: a first material; and a second material
positioned adjacent to the first material.
17. The device of claim 16, wherein the first material is
polymethyl methacrylate (PMMA).
18. The device of claim 17, wherein the second material is
polystyrene (PS).
19. The device of claim 16, wherein the first material is
positioned adjacent to the interlayer dielectric layer on a first
side and the first material is positioned adjacent to the second
material on a second side.
20. The device of claim 16, further comprising: a metal hard mask
layer deposited over the first dielectric layer; and a second
dielectric layer deposited over the metal hard mask layer; wherein
at least one opening extends from the top surface of the device,
through the second dielectric layer and the metal hard mask layer
down to the first dielectric layer, the at least one opening
aligned with the at least one first contact.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to semiconductor devices and
methods of fabricating semiconductor devices, and more
particularly, to methods and devices for back end of line via
formation.
BACKGROUND OF THE INVENTION
[0002] As semiconductor devices continue to decrease in size, the
size of trenches and vias continue to decrease. With smaller
trenches and vias the semiconductor devices may experience via
bowing and time dependent dielectric breakdown resulting in, for
example, via to metal shorts and lower resolution and uniformity.
The shorts and dielectric breakdown may decrease the device yield
and reliability and also increase defectivity. Thus, new devices
and methods for shrinking the critical dimension of back end of
line via formation is needed.
SUMMARY OF THE INVENTION
[0003] The shortcomings of the prior art are overcome and
additional advantages are provided through the provision, in one
aspect, a method includes obtaining a wafer with a substrate and at
least one contact in the substrate; depositing at least one
lithography stack over the substrate; performing lithography to
pattern at least one via opening; depositing a block co-polymer
coating over the wafer into the at least one via opening;
performing an ashing to remove excess block co-polymer material and
form block co-polymer caps; and performing a thermal bake to
separate the block co-polymer caps into a first material and a
second material.
[0004] In another aspect, an intermediate semiconductor device is
provided which includes, for instance: a substrate; at least one
first contact in the substrate; at least one second contact in the
substrate; and at least one block co-polymer cap aligned with the
at least one second contact.
[0005] Additional features and advantages are realized through the
techniques of the present invention. Other embodiments and aspects
of the invention are described in detail herein and are considered
a part of the claimed invention.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0006] One or more aspects of the present invention are
particularly pointed out and distinctly claimed as examples in the
claims at the conclusion of the specification. The foregoing and
other objects, features, and advantages of the invention are
apparent from the following detailed description taken in
conjunction with the accompanying drawings in which:
[0007] FIG. 1 depicts one embodiment of a method to shrink back end
of line via critical dimension formation, in accordance with one or
more aspects of the present invention;
[0008] FIG. 2 depicts a cross-sectional elevation view of one
embodiment of an integrated circuit with at least one lithography
stack over the intermediate semiconductor device, in accordance
with one or more aspects of the present invention;
[0009] FIG. 3 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 2 after performing lithography to
pattern at least one via, in accordance with one or more aspects of
the present invention;
[0010] FIG. 4 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 3 after etching to pattern the at
least one via and depositing a block co-polymer (BCP) over the
intermediate semiconductor device, in accordance with one or more
aspects of the present invention;
[0011] FIG. 5 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 4 after performing an ashing to remove
the excess BCP material, in accordance with one or more aspects of
the present invention;
[0012] FIG. 6 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 5 after performing a thermal bake to
the intermediate semiconductor device to separate the BCP material
into polymethyl methacrylate (PMMA) and polystyrene (PS), in
accordance with one or more aspects of the present invention;
[0013] FIG. 7 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 6 after removing the PMMA from the
intermediate semiconductor device, in accordance with one or more
aspects of the present invention;
[0014] FIG. 8 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 7 after performing a full etch to open
the at least one trench and at least one via, in accordance with
one or more aspects of the present invention;
[0015] FIG. 9 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 8 after stripping the hard mask layer,
in accordance with one or more aspects of the present
invention;
[0016] FIG. 10 depicts the cross-sectional elevation view of the
semiconductor device of FIG. 9 after performing a barrier
deposition, a seed deposition, and metal plating, in accordance
with one or more aspects of the present invention;
[0017] FIG. 11 depicts a first cross-sectional elevation view of
the semiconductor device of FIG. 10 after performing a chemical
mechanical planarization (CMP), in accordance with one or more
aspects of the present invention; and
[0018] FIG. 12 depicts a second cross-sectional elevation view of
the semiconductor device of FIG. 10 after performing a CMP, in
accordance with one or more aspects of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0019] Aspects of the present invention and certain features,
advantages, and details thereof, are explained more fully below
with reference to the non-limiting embodiments illustrated in the
accompanying drawings. Descriptions of well-known materials,
fabrication tools, processing techniques, etc., are omitted so as
to not unnecessarily obscure the invention in detail. It should be
understood, however, that the detailed description and the specific
examples, while indicating embodiments of the invention, are given
by way of illustration only, and are not by way of limitation.
Various substitutions, modifications, additions and/or arrangements
within the spirit and/or scope of the underlying inventive concepts
will be apparent to those skilled in the art from this disclosure.
Note also that reference is made below to the drawings, which are
not drawn to scale for ease of understanding, wherein the same
reference numbers used throughout different figures designate the
same or similar components.
[0020] Generally stated, disclosed herein are certain semiconductor
devices, for example, field-effect transistors (FETs), which
provide advantages over the above noted, existing semiconductor
devices and fabrication processes. Advantageously, the
semiconductor device fabrication processes disclosed herein provide
for devices with improved yield, defectivity, and reliability.
[0021] In one aspect, in one embodiment, as shown in FIG. 1, the
semiconductor device formation process in accordance with one or
more aspects of the present invention may include, for instance:
obtaining a semiconductor device 100; performing lithography to
pattern at least one via opening 110; depositing a block co-polymer
coating over the semiconductor device 120; performing an ashing to
remove excess block co-polymer material 130; performing a thermal
bake to the device to separate the PMMA and PS 140; etching to
remove the PMMA 150; performing a full etch to open the at least
one trench opening and the at least one via opening 160; removing a
hard mask layer 170; and depositing at least one metal layer over
the semiconductor device 180.
[0022] FIGS. 2-12 depict, by way of example only, a detailed
embodiment of a portion of a semiconductor device formation process
of FIG. 1 and an intermediate semiconductor device, in accordance
with one or more aspects of the present invention. Note again that
these figures are not drawn to scale in order to facilitate
understanding of the invention, and that the same reference
numerals used throughout different figures designate the same or
similar elements.
[0023] One detailed embodiment of a portion of the semiconductor
device formation process of FIG. 1 is depicted, by way of example
only, in FIGS. 2-12. FIG. 2 shows a portion of a semiconductor
device 200 obtained during the fabrication process. The device 200
may have been processed through initial device processing steps in
accordance with the design of the device 200 being fabricated, for
example, the device 200 may include, for example, a substrate 202
with at least one first contact 204 and at least one second contact
206. The device 200 may also include at least one isolation region
(not shown), at least one fin (not shown), source regions (not
shown), drain regions (not shown) and the like. The substrate 202
may in some embodiments have or be a substantially crystalline
substrate material (i.e., bulk silicon), whereas in other
embodiments, substrate 202 may be formed on the basis of a
silicon-on-insulator (SOI) architecture. The at least one contact
openings 204, 206 may be filled with a metal, for example, tungsten
(W). The device 200 may also include an insulation layer 208
deposited over the substrate 202. The insulation layer 208 may be,
for example, a nitrogen-doped silicon carbide, such as NBLoK. The
device 200 may further include an interlayer dielectric (ILD) layer
210 deposited over the insulation layer 208. The ILD layer 210 may
be, for example, carbon doped oxide dielectric, such as, SiCOH
(C-doped Si--O k=2.0-2.7), and the like, or a combination of these
commonly used dielectric materials.
[0024] Next, as also shown in FIG. 2, a first dielectric hard mask
layer 212 may be deposited over the device 200. The first
dielectric hard mask layer 212 may be, for example, a dielectric
hard mask layer, such as, silicon oxynitride (SiON), tetraethyl
orthosilicate (TEOS), or silicon dioxide (SiO.sub.2). A hard mask
layer 214 may then be deposited over the device 200 and the hard
mask layer 214 may be, for example, a metal hard mask layer 214,
such as, titanium nitride (TiN) and tantalum nitride (TaN). A
second dielectric hard mask layer 216 may then be deposited over
the metal hard mask layer 214. The second dielectric hard mask
layer 216 may be, for example, a dielectric hard mask layer, such
as, SiON, TEOS, or SiO.sub.2. The first and second dielectric hard
masks 212, 216 may act as protective layers for the underlying
layers during the device fabrication, for example, during an ashing
process of a photoresist mask layer. The first and second
dielectric hard masks 212, 216 may have an etch selectivity
relative to at least the material including the upper surface
portion of the ILD layer 210, such as silicon nitride (SiN),
silicon oxynitride (SiON), silicon carbide (SiC), silicon
carbonitride (SiCN), and the like. The dielectric hard masks 212,
216 may be formed above the contacts 204, 206 by performing a
suitable deposition process based on device parameters well known
in the art, such as, a chemical vapor deposition (CVD) process, a
physical vapor deposition (PVD) process, an atomic layer deposition
(ALD), a spin on coating, and the like.
[0025] Then, lithography may be performed to pattern at least one
first opening 218 and at least one second opening 220, as shown in
FIG. 2. The lithography may be performed by known methods including
applying a lithography stack (not shown) over the device 200,
patterning the lithography stack (not shown) and then etching into
the second dielectric layer 216 and the hard mask layer 214 to form
the openings 218, 220. After the openings 218, 220 are formed, a
second lithography stack may be applied over the device 200. The
second lithography stack may include a spin-on-hardmask (SOH) layer
222, a third dielectric layer 224, a bottom anti-reflection coating
(BARC) layer 226, and a photoresist layer 228. The SOH layer 222
may be deposited over the device 200 filling the openings 218, 220.
The third dielectric layer 224 may be deposited over the SOH layer
222 and may be, for example, a SiON layer or a silicon-containing
anti-reflective coating (Si-ARC) layer.
[0026] Next, as shown in FIGS. 3 and 4, lithography may be
performed to pattern openings 230 in the photoresist layer 228. The
device 200 may then be etched to form at least one via or via
opening 232 through the BARC layer 226, the third dielectric layer
224, the SOH layer 222, the second dielectric layer 216, the hard
mask layer 214, the first dielectric layer 212 and into the ILD
layer 210. Once the at least one opening 232 is formed any
remaining portion of the second lithography stack may be removed
from the device 200. A portion of the SOH layer 222 may also be
removed, as shown in FIG. 4. Next, as also shown in FIG. 4, a block
co-polymer (BCP) layer 234 may be deposited over the device 200.
The BCP layer 234 may be deposited by, for example, a spin-on
process.
[0027] An ashing process may then be performed on the device 200
removing a portion of the BCP layer 234 and forming BCP caps 240 in
the openings 232, as shown in FIG. 5. Next, the device 200 may be
thermally baked. The thermal bake may allow for the BCP caps to
separate into a first material 242 and a second material 244, as
shown in FIG. 6. The second material 244 may line the side walls of
the at least one opening 232 and the first material 242 may be
positioned between the second material 244. The first material 242
may be, for example, polymethyl methacrylate (PMMA), and the second
material 244 may be, for example, polystyrene (PS). Then, the PMMA
242 may be removed by, for example, wet etching or exposure and wet
etching, to form at least one opening 246 between the PS material
244, as shown in FIG. 7.
[0028] As shown in FIG. 8, once the at least one opening 246 is
formed, a full etch may be performed to form openings 248, 250,
252. The openings 248, 250 may be, for example, at least one trench
or trench opening, and the at least one opening 252 may be, for
example, at least one via or via opening. The at least one via
opening 252 may be, for example, etched down to contact at least
one contact opening 206. After the openings 248, 250, 252 are
formed, the metal hard mask layer 214 may be stripped, as shown in
FIG. 9. The metal hard mask layer 214 may be stripped by, for
example, a wet clean, such as EKC to remove any of the remaining
metal hard mask layer 214.
[0029] A metal deposition process may then be performed to deposit
at least one metal layer 254 into the trench openings 248, 250 and
via openings 252, as shown in FIG. 10. The metal deposition process
may be any suitable metal deposition process known in the art. For
example, the metal deposition process may include depositing a
barrier layer (not shown) over the device 200 and into the trench
openings 248, 250 and via openings 252. Next, the metal deposition
process may include depositing a seed layer (not shown) over the
barrier layer (not shown). Then, the trench openings 248, 250 and
via openings 252 may be filled with a layer of conductive contact
material 254 based on a substantially "bottom-up" deposition
process well known to those skilled in the art, such as, a suitably
designed electrochemical plating (ECP) process and the like,
thereby reducing the likelihood of voids formed and/or trapped in
the finished trenches and vias 256, 258. The finished trenches and
vias 256, 258 are shown in FIGS. 11 and 12 after a CMP is
performed. A cross-section of the device 200 in the
non-self-aligned via direction is shown in FIG. 11 and a
cross-section of the device 200 in the self-aligned via direction
is shown in FIG. 12.
[0030] The terminology used herein is for the purpose of describing
particular embodiments only and is not intended to be limiting of
the invention. As used herein, the singular forms "a", "an" and
"the" are intended to include the plural forms as well, unless the
context clearly indicates otherwise. It will be further understood
that the terms "comprise" (and any form of comprise, such as
"comprises" and "comprising"), "have" (and any form of have, such
as "has" and "having"), "include" (and any form of include, such as
"includes" and "including"), and "contain" (and any form contain,
such as "contains" and "containing") are open-ended linking verbs.
As a result, a method or device that "comprises", "has", "includes"
or "contains" one or more steps or elements possesses those one or
more steps or elements, but is not limited to possessing only those
one or more steps or elements. Likewise, a step of a method or an
element of a device that "comprises", "has", "includes" or
"contains" one or more features possesses those one or more
features, but is not limited to possessing only those one or more
features. Furthermore, a device or structure that is configured in
a certain way is configured in at least that way, but may also be
configured in ways that are not listed.
[0031] The corresponding structures, materials, acts, and
equivalents of all means or step plus function elements in the
claims below, if any, are intended to include any structure,
material, or act for performing the function in combination with
other claimed elements as specifically claimed. The description of
the present invention has been presented for purposes of
illustration and description, but is not intended to be exhaustive
or limited to the invention in the form disclosed. Many
modifications and variations will be apparent to those of ordinary
skill in the art without departing from the scope and spirit of the
invention. The embodiments were chosen and described in order to
best explain the principles of one or more aspects of the invention
and the practical application, and to enable others of ordinary
skill in the art to understand one or more aspects of the invention
for various embodiments with various modifications as are suited to
the particular use contemplated.
* * * * *