U.S. patent application number 15/055442 was filed with the patent office on 2016-06-23 for polishing apparatus.
The applicant listed for this patent is EBARA CORPORATION. Invention is credited to Makoto FUKUSHIMA, Hozumi YASUDA, Hiroshi YOSHIDA.
Application Number | 20160176009 15/055442 |
Document ID | / |
Family ID | 54158039 |
Filed Date | 2016-06-23 |
United States Patent
Application |
20160176009 |
Kind Code |
A1 |
YOSHIDA; Hiroshi ; et
al. |
June 23, 2016 |
POLISHING APPARATUS
Abstract
A polishing apparatus capable of performing multi-stage
polishing of a substrate, such as wafer, is disclosed. The
polishing apparatus includes: a plurality of polishing tables each
for supporting a polishing pad; a plurality of polishing heads each
configured to press a substrate against the polishing pad; and a
transporting device configured to transport the substrate to at
least two of the plurality of polishing heads. The plurality of
polishing heads have different structures.
Inventors: |
YOSHIDA; Hiroshi; (Tokyo,
JP) ; FUKUSHIMA; Makoto; (Tokyo, JP) ; YASUDA;
Hozumi; (Tokyo, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
EBARA CORPORATION |
Tokyo |
|
JP |
|
|
Family ID: |
54158039 |
Appl. No.: |
15/055442 |
Filed: |
February 26, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
14672003 |
Mar 27, 2015 |
|
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15055442 |
|
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Current U.S.
Class: |
156/345.14 ;
156/345.12 |
Current CPC
Class: |
H01L 21/02024 20130101;
H01L 21/67742 20130101; H01L 21/67219 20130101; B24B 37/10
20130101; B24B 37/345 20130101 |
International
Class: |
B24B 37/10 20060101
B24B037/10; H01L 21/677 20060101 H01L021/677; H01L 21/67 20060101
H01L021/67; B24B 37/34 20060101 B24B037/34 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 31, 2014 |
JP |
2014-072965 |
Nov 11, 2014 |
JP |
2014-229169 |
Claims
1. A polishing apparatus comprising: a plurality of polishing
tables each for supporting a polishing pad; a plurality of
polishing heads each configured to press a substrate against the
polishing pad, the plurality of polishing heads having different
structures; and a transporting device configured to transport the
substrate to at least two of the plurality of polishing heads.
2. The polishing apparatus according to claim 1, wherein the
plurality of polishing heads include: at least one uniform-pressure
polishing head configured to apply a uniform pressure to the
substrate; and at least one multi-chamber polishing head capable of
applying different pressures to the substrate.
3. The polishing apparatus according to claim 2, wherein: the at
least one uniform-pressure polishing head is at least one of a
rigid-body polishing head and a single-chamber polishing head; the
rigid-body polishing head includes a rigid body having a flat
surface in a circular shape, a substrate holding material in a
circular shape attached to the flat surface and configured to press
the substrate against the polishing pad, and a guide ring
configured to hold the substrate without contact with the polishing
pad; and the single-chamber polishing head includes a carrier, a
plate disposed below the carrier, a circular elastic membrane that
forms a single pressure chamber under the plate, and a retainer
ring secured to the carrier so as to surround the substrate and
configured to press the polishing pad.
4. The polishing apparatus according to claim 2, wherein: the at
least one multi-chamber polishing head is at least one of a first
multi-chamber polishing head and a second multi-chamber polishing
head; the first multi-chamber polishing head includes a carrier, a
plate disposed below the carrier, a circular elastic membrane that
forms a plurality of pressure chambers under the plate, and a
retainer ring secured to the carrier so as to surround the
substrate and configured to press the polishing pad; and the second
multi-chamber polishing head includes a carrier, a circular elastic
membrane that forms a plurality of pressure chambers under the
carrier, a retainer ring disposed so as to surround the substrate
and configured to press the polishing pad, and an annular elastic
membrane provided between the retainer ring and the carrier, an
annular pressure chamber being formed in the annular elastic
membrane.
5. A polishing apparatus comprising: a plurality of polishing
tables each for supporting a polishing pad; a first polishing head
having a plurality of pressure chambers each configured to generate
a pressure for pressing a substrate against the polishing pad; and
a second polishing head having a plurality of pressure chambers
each configured to generate a pressure for pressing the substrate
against the polishing pad, an arrangement of the pressure chambers
of the second polishing head being different from an arrangement of
the pressure chambers of the first polishing head.
6. The polishing apparatus according to claim 5, wherein the
pressure chambers of the second polishing head are arranged at
positions corresponding to positions of boundaries between the
pressure chambers of the first polishing head.
7. The polishing apparatus according to claim 5, wherein at least
two of the pressure chambers of the second polishing head are
arranged at positions corresponding to a position of one of the
pressure chambers of the first polishing head.
8. A polishing apparatus for polishing a substrate, comprising: a
first polishing head configured to press a substrate against a
first polishing surface to polish a surface of the substrate, the
first polishing head having a first elastic membrane which receives
a pressure of a fluid to press the substrate against the first
polishing surface; and a second polishing head configured to press
a substrate against a second polishing surface to polish a surface
of the substrate, the second polishing head having a second elastic
membrane which receives a pressure of a fluid to press the
substrate against the second polishing surface, and the second
elastic membrane having a structure different from that of the
first elastic membrane.
9. The polishing apparatus according to claim 8, wherein the second
polishing head is configured to further polish the substrate which
has been polished by the first polishing head.
10. The polishing apparatus according to claim 8, wherein the
second elastic membrane has a hardness different from that of the
first elastic membrane.
11. The polishing apparatus according to claim 8, wherein the
second elastic membrane has a circumferential wall whose shape is
different from that of a circumferential wall of the first elastic
membrane.
12. The polishing apparatus according to claim 8, wherein the
second elastic membrane has a contact portion which is to be
brought into contact with the substrate, the contact portion having
a thickness different from that of a contact portion, which is to
be brought into contact with the substrate, of the first elastic
membrane.
13. The polishing apparatus according to claim 8, wherein the
second elastic membrane has a substrate pressing surface whose area
is different from that of a substrate pressing surface of the first
elastic membrane.
14. The polishing apparatus according to claim 8, wherein the
second elastic membrane has a contact portion which is to be
brought into contact with the substrate, the contact portion having
an edge whose shape is different from that of an edge of a contact
portion, which is to be brought into contact with the substrate, of
the first elastic membrane.
15. The polishing apparatus according to claim 8, further
comprising: a third polishing head configured to press a substrate
against a third polishing surface to polish a surface of the
substrate, the third polishing head having a third elastic membrane
which receives a pressure of a fluid to press the substrate against
the third polishing surface, the first elastic membrane having the
same structure as that of the third elastic membrane; and a fourth
polishing head configured to press a substrate against a fourth
polishing surface to polish a surface of the substrate, the fourth
polishing head having a fourth elastic membrane which receives a
pressure of a fluid to press the substrate against the fourth
polishing surface, the second elastic membrane having the same
structure as that of the fourth elastic membrane.
16. A polishing apparatus for polishing a substrate, comprising: a
first polishing head configured to press a substrate against a
first polishing surface to polish a surface of the substrate, the
first polishing head having a first retainer ring disposed so as to
surround the substrate and configured to press the first polishing
surface; and a second polishing head configured to press a
substrate against a second polishing surface to polish a surface of
the substrate, the second polishing head having a second retainer
ring disposed so as to surround the substrate and configured to
press the second polishing surface, and the second retainer ring
having a structure different from that of the first retainer
ring.
17. The polishing apparatus according to claim 16, wherein the
second polishing head is configured to further polish the substrate
which has been polished by the first polishing head.
18. The polishing apparatus according to claim 16, wherein: the
first retainer ring has first grooves each extending from an inner
circumferential surface to an outer circumferential surface of the
first retainer ring; the second retainer ring has second grooves
each extending from an inner circumferential surface to an outer
circumferential surface of the second retainer ring; and the number
of second grooves differs from the number of first grooves.
19. The polishing apparatus according to claim 16, wherein: the
first retainer ring has first grooves each extending from an inner
circumferential surface to an outer circumferential surface of the
first retainer ring; the second retainer ring has second grooves
each extending from an inner circumferential surface to an outer
circumferential surface of the second retainer ring; and the second
grooves have shape different from that of the first grooves.
20. The polishing apparatus according to claim 16, wherein one of
the first retainer ring and the second retainer ring has grooves
each extending from an inner circumferential surface to an outer
circumferential surface thereof, while the other of the first
retainer ring and the second retainer ring has no groove that
extends from an inner circumferential surface to an outer
circumferential surface thereof.
21. The polishing apparatus according to claim 16, wherein the
first retainer ring or the second retainer ring has a tapered or
oval edge portion.
22. The polishing apparatus according to claim 16, wherein the
second retainer ring has a width different from that of the first
retainer ring.
23. The polishing apparatus according to claim 16, wherein the
first retainer ring or the second retainer ring comprises an inner
retainer ring and an outer retainer ring.
24. The polishing apparatus according to claim 16, wherein the
second retainer ring is composed of a material different from that
of the first retainer ring.
25. The polishing apparatus according to claim 16, further
comprising: a third polishing head configured to press a substrate
against a third polishing surface to polish a surface of the
substrate, the third polishing head having a third retainer ring
disposed so as to surround the substrate and configured to press
the third polishing surface, the third retainer ring having the
same structure as that of the first retainer ring; and a fourth
polishing head configured to press a substrate against a fourth
polishing surface to polish a surface of the substrate, the fourth
polishing head having a fourth retainer ring disposed so as to
surround the substrate and configured to press the fourth polishing
surface, and the fourth retainer ring having the same structure as
that of the second retainer ring.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This document is a Divisional application of U.S. patent
Ser. No. 14/672,003 filed Mar. 27, 2015, which claims priorities to
Japanese Patent Application Number 2014-072965 filed Mar. 31, 2014
and Japanese Patent Application Number 2014-229169 filed Nov. 11,
2014, the entire contents of which are hereby incorporated by
reference.
BACKGROUND
[0002] As semiconductor devices have been in a trend toward high
integration and high density in recent years, circuit interconnects
are also becoming smaller and finer, and the larger number of
layers are used to form multilayer interconnects. The multilayer
interconnects with the finer circuits entail greater surface steps
which reflect surface irregularities of lower layers. An increase
in the number of interconnect layers would result in poor film
formation (or step coverage) over stepped configurations of thin
films. Therefore, better multilayer interconnects need to have the
improved step coverage and proper surface planarization.
Furthermore, miniaturization of a photolithographic process
necessitates a smaller depth of focus in a photolithographic
optical system, and therefore a surface of the semiconductor device
needs to be planarized such that the irregularities or steps on the
surface of the semiconductor device will fall within the depth of
focus.
[0003] Thus, in a process of manufacturing semiconductor devices,
it becomes increasingly important to planarize a surface of the
semiconductor device. One of the most important techniques in the
surface planarization is chemical mechanical polishing (CMP). This
chemical mechanical polishing is performed by bringing a wafer into
sliding contact with a polishing surface of a polishing pad, while
supplying a polishing liquid, containing abrasive particles such as
silica (SiO.sub.2) therein, onto the polishing surface to thereby
polish the wafer.
[0004] A CMP apparatus is a polishing apparatus for chemically and
mechanically polishing a wafer. Such a polishing apparatus, which
is called CMP apparatus, includes a plurality of polishing tables
and a plurality of polishing heads in order to perform multistage
polishing of a wafer. A wafer is transported to polishing pads on
polishing tables successively, and is polished on the polishing
pads by polishing heads successively. For example, rough polishing
of a wafer is performed as a first-stage polishing, and final
polishing of the wafer is performed as a second-stage
polishing.
[0005] The polishing apparatus is required to execute polishing
recipes adapted to various polishing processes. To meet such
requirement, high-performance polishing heads are used as the
above-described plurality of polishing heads. More specifically,
the polishing heads may each include a membrane for pressing a
plurality of areas of a wafer independently, a retainer ring for
pressing a polishing pad in an area around the wafer, etc.
[0006] However, such a high-performance polishing head has a
complicated structure and has costly consumables (the membrane, the
retainer ring, etc.), and therefore entails an increased
maintenance cost and an increased running cost. Further, a
frequency of maintenance work will also increase, resulting in a
decrease in an operation rate of the apparatus.
[0007] The above polishing head has a plurality of pressure
chambers formed by the membrane. The pressure chambers are capable
of changing the internal pressures, so that the polishing head can
apply different polishing pressures to a plurality of areas of a
wafer. Therefore, the polishing head can polish the wafer while
individually controlling polishing rates in the respective areas of
the wafer.
[0008] However, the polishing head of this type cannot control the
polishing rate in smaller areas than the pressure chambers. It is
possible to perform finer control of a wafer profile by using more
pressure chambers, but there is a limit on the number of pressure
chambers that can be provided in the polishing head. Furthermore,
the above-described polishing head is not able to positively
control a polishing rate of a wafer at a boundary between the
pressure chambers, and therefore the polishing rate may be low at
the boundary between the pressure chambers.
[0009] With the progress toward higher integration of semiconductor
devices and in order to increase the productivity in manufacturing
of semiconductor devices, there has recently been a strong demand
for higher-performance polishing apparatus. Performance
characteristics as required for the polishing apparatus may include
a planarization capability (a capability of Dishing/Erosion), a
polishing rate (also called a removal rate), a uniformity of
polishing-rate distribution over a wafer surface, a low defect
level of polished wafer, a throughput of the polishing apparatus,
etc.
[0010] The above-described performance characteristics often
require contradictory polishing conditions. For example, polishing
with a low pressure is typically desirable for enhancing the
planarization capability, while polishing with a high pressure is
desirable for increasing the polishing rate and the throughput. In
addition, polishing using a high-hardness polishing pad is
typically desirable for enhancing the planarization capability,
while use of a low-hardness polishing pad is often desirable in
order to achieve a low defect level of a polished wafer.
[0011] Japanese laid-open patent publication No. 2010-50436
discloses a polishing apparatus having multiple polishing heads.
When such a polishing apparatus is used to perform multistage
polishing, different polishing liquids and different polishing pads
are used in accordance with types of intended polishing, such as
rough polishing, final polishing, etc., thus resulting in basically
different polishing-rate distributions. Therefore, polishing head
control characteristics, which are necessary to improve the
uniformity of polishing rate in a wafer surface, differ between
rough polishing and final polishing.
SUMMARY OF THE INVENTION
[0012] According to an embodiment, there is provided a low-cost
polishing apparatus which can perform multistage polishing of a
substrate, such as a wafer.
[0013] According to embodiments, there are provided a polishing
apparatus and a polishing method which can more precisely control a
profile of a substrate, such as a wafer.
[0014] Further, according to an embodiment, there is provided a
polishing apparatus provided with different types of polishing
heads which can perform optimum multistage polishing under
different polishing conditions.
[0015] Embodiments, which will be described below, relate to a
polishing apparatus and a polishing method for polishing a
substrate, such as a wafer, and more particularly to a polishing
apparatus and a polishing method for polishing a substrate with use
of various types of polishing heads having different
structures.
[0016] In an embodiment, there is provided a polishing apparatus
comprising: a plurality of polishing tables each for supporting a
polishing pad; a plurality of polishing heads each configured to
press a substrate against the polishing pad, the plurality of
polishing heads having different structures; and a transporting
device configured to transport the substrate to at least two of the
plurality of polishing heads.
[0017] In an embodiment, the plurality of polishing heads include:
at least one uniform-pressure polishing head configured to apply a
uniform pressure to the substrate; and at least one multi-chamber
polishing head capable of applying different pressures to the
substrate.
[0018] In an embodiment, the at least one uniform-pressure
polishing head is at least one of a rigid-body polishing head and a
single-chamber polishing head. The rigid-body polishing head
includes a rigid body having a flat surface in a circular shape, a
substrate holding material in a circular shape attached to the flat
surface and configured to press the substrate against the polishing
pad, and a guide ring configured to hold the substrate without
contact with the polishing pad. The single-chamber polishing head
includes a carrier, a plate disposed below the carrier, a circular
elastic membrane that forms a single pressure chamber under the
plate, and a retainer ring secured to the carrier so as to surround
the substrate and configured to press the polishing pad.
[0019] In an embodiment, the at least one multi-chamber polishing
head is at least one of a first multi-chamber polishing head and a
second multi-chamber polishing head. The first multi-chamber
polishing head includes a carrier, a plate disposed below the
carrier, a circular elastic membrane that forms a plurality of
pressure chambers under the plate, and a retainer ring secured to
the carrier so as to surround the substrate and configured to press
the polishing pad. The second multi-chamber polishing head includes
a carrier, a circular elastic membrane that forms a plurality of
pressure chambers under the carrier, a retainer ring disposed so as
to surround the substrate and configured to press the polishing
pad, and an annular elastic membrane provided between the retainer
ring and the carrier, an annular pressure chamber being formed in
the annular elastic membrane.
[0020] In an embodiment, there is provided a polishing apparatus
comprising: a plurality of polishing tables each for supporting a
polishing pad; a first polishing head having a plurality of
pressure chambers each configured to generate a pressure for
pressing a substrate against the polishing pad; and a second
polishing head having a plurality of pressure chambers each
configured to generate a pressure for pressing the substrate
against the polishing pad, an arrangement of the pressure chambers
of the second polishing head being different from an arrangement of
the pressure chambers of the first polishing head.
[0021] In an embodiment, the pressure chambers of the second
polishing head are arranged at positions corresponding to positions
of boundaries between the pressure chambers of the first polishing
head.
[0022] In an embodiment, at least two of the pressure chambers of
the second polishing head are arranged at positions corresponding
to a position of one of the pressure chambers of the first
polishing head.
[0023] In an embodiment, there is provided a polishing method
comprising: pressing a substrate against a polishing pad by a first
polishing head having a plurality of pressure chambers to polish
the substrate; and then pressing the substrate against a polishing
pad by a second polishing head having a plurality of pressure
chambers, whose arrangement is different from an arrangement of the
pressure chambers of the first polishing head, to polish the
substrate.
[0024] According to the above-described embodiments, the plurality
of polishing heads having different structures, i.e., having
different initial costs and maintenance costs, are used. The use of
the plurality of polishing heads having different structures can
reduce a frequency of using a polishing head that requires a high
maintenance cost. Therefore, the total maintenance cost of the
polishing apparatus can be reduced.
[0025] According to the above-described embodiments, the first
polishing head and the second polishing head, having the pressure
chambers in different arrangements, are used. These two polishing
heads can press different areas of a substrate against the
polishing pad. In other words, the use of the two polishing heads,
having the pressure chambers in different arrangements, can achieve
the same effect as that achieved by use of a single polishing head
having an increased number of pressure chambers. Therefore, a
profile of a substrate can be controlled more precisely.
[0026] In an embodiment, there is provided a polishing apparatus
for polishing a substrate, comprising: a first polishing head
configured to press a substrate against a first polishing surface
to polish a surface of the substrate, the first polishing head
having a first elastic membrane which receives a pressure of a
fluid to press the substrate against the first polishing surface;
and a second polishing head configured to press a substrate against
a second polishing surface to polish a surface of the substrate,
the second polishing head having a second elastic membrane which
receives a pressure of a fluid to press the substrate against the
second polishing surface, and the second elastic membrane having a
structure different from that of the first elastic membrane.
[0027] In an embodiment, the second polishing head is configured to
further polish the substrate which has been polished by the first
polishing head.
[0028] In an embodiment, the second elastic membrane has a hardness
different from that of the first elastic membrane.
[0029] In an embodiment, the second elastic membrane has a
circumferential wall whose shape is different from that of a
circumferential wall of the first elastic membrane.
[0030] In an embodiment, the second elastic membrane has a contact
portion which is to be brought into contact with the substrate, the
contact portion having a thickness different from that of a contact
portion, which is to be brought into contact with the substrate, of
the first elastic membrane.
[0031] In an embodiment, the second elastic membrane has a
substrate pressing surface whose area is different from that of a
substrate pressing surface of the first elastic membrane.
[0032] In an embodiment, the second elastic membrane has a contact
portion which is to be brought into contact with the substrate, the
contact portion having an edge whose shape is different from that
of an edge of a contact portion, which is to be brought into
contact with the substrate, of the first elastic membrane.
[0033] In an embodiment, the polishing apparatus further comprises:
a third polishing head configured to press a substrate against a
third polishing surface to polish a surface of the substrate, the
third polishing head having a third elastic membrane which receives
a pressure of a fluid to press the substrate against the third
polishing surface, the first elastic membrane having the same
structure as that of the third elastic membrane; and a fourth
polishing head configured to press a substrate against a fourth
polishing surface to polish a surface of the substrate, the fourth
polishing head having a fourth elastic membrane which receives a
pressure of a fluid to press the substrate against the fourth
polishing surface, the second elastic membrane having the same
structure as that of the fourth elastic membrane.
[0034] In an embodiment, there is provided a polishing apparatus
for polishing a substrate, comprising: a first polishing head
configured to press a substrate against a first polishing surface
to polish a surface of the substrate, the first polishing head
having a first retainer ring disposed so as to surround the
substrate and configured to press the first polishing surface; and
a second polishing head configured to press a substrate against a
second polishing surface to polish a surface of the substrate, the
second polishing head having a second retainer ring disposed so as
to surround the substrate and configured to press the second
polishing surface, and the second retainer ring having a structure
different from that of the first retainer ring.
[0035] In an embodiment, the second polishing head is configured to
further polish the substrate which has been polished by the first
polishing head.
[0036] In an embodiment, the first retainer ring has first grooves
each extending from an inner circumferential surface to an outer
circumferential surface of the first retainer ring, the second
retainer ring has second grooves each extending from an inner
circumferential surface to an outer circumferential surface of the
second retainer ring, and the number of second grooves differs from
the number of first grooves.
[0037] In an embodiment, the first retainer ring has first grooves
each extending from an inner circumferential surface to an outer
circumferential surface of the first retainer ring, the second
retainer ring has second grooves each extending from an inner
circumferential surface to an outer circumferential surface of the
second retainer ring, and the second grooves have shape different
from that of the first grooves.
[0038] In an embodiment, one of the first retainer ring and the
second retainer ring has grooves each extending from an inner
circumferential surface to an outer circumferential surface
thereof, while the other of the first retainer ring and the second
retainer ring has no groove that extends from an inner
circumferential surface to an outer circumferential surface
thereof.
[0039] In an embodiment, the first retainer ring or the second
retainer ring has a tapered or oval edge portion.
[0040] In an embodiment, the second retainer ring has a width
different from that of the first retainer ring.
[0041] In an embodiment, the first retainer ring or the second
retainer ring comprises an inner retainer ring and an outer
retainer ring.
[0042] In an embodiment, the second retainer ring is composed of a
material different from that of the first retainer ring.
[0043] In an embodiment, the polishing apparatus further comprises:
a third polishing head configured to press a substrate against a
third polishing surface to polish a surface of the substrate, the
third polishing head having a third retainer ring disposed so as to
surround the substrate and configured to press the third polishing
surface, the third retainer ring having the same structure as that
of the first retainer ring; and a fourth polishing head configured
to press a substrate against a fourth polishing surface to polish a
surface of the substrate, the fourth polishing head having a fourth
retainer ring disposed so as to surround the substrate and
configured to press the fourth polishing surface, and the fourth
retainer ring having the same structure as that of the second
retainer ring.
[0044] The polishing apparatus according to the above-described
embodiments can perform optimum multistage polishing with use of
the different types of polishing heads. For example, a wafer is
polished at a relatively high pressure with use of a polishing head
having a high-hardness elastic membrane in the first-stage
polishing, and the wafer is polished at a relatively low pressure
with use of a polishing head having a low-hardness elastic membrane
in the second-stage polishing. In another exemplary process, in
order to obtain different wafer-edge profiles in the first-stage
polishing and the second-stage polishing, the first-stage polishing
and the second-stage polishing are performed using polishing heads
whose elastic membranes have different shapes of edge portions. It
is also possible to use a high-hardness polishing pad in the
first-stage polishing and to use, in the second-stage polishing, a
polishing head whose retainer ring has the smaller number of
grooves than the retainer ring used in the first-stage polishing or
has a tapered or oval edge portion. A width of a retainer ring
affects rebound characteristics of a polishing pad and a flow of a
polishing liquid being supplied to a wafer surface. Therefore, two
polishing heads, provided with retainer rings having different
widths, may be used to perform multistage polishing of a wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0045] FIG. 1 is a diagram showing a polishing apparatus according
to an embodiment;
[0046] FIG. 2 is a schematic perspective view of a first polishing
unit;
[0047] FIG. 3 is a cross-sectional view showing a polishing head of
the first polishing unit;
[0048] FIG. 4 is a cross-sectional view showing a polishing head of
a second polishing unit;
[0049] FIG. 5 is a cross-sectional view showing a polishing head of
a third polishing unit;
[0050] FIG. 6 is a cross-sectional view showing a polishing head of
a fourth polishing unit;
[0051] FIG. 7 is a diagram illustrating a process including the
steps of rough polishing of a wafer, first profile control
polishing of the wafer, second profile control polishing of the
wafer, and final polishing of the wafer, performed in this order
with use of four polishing heads;
[0052] FIG. 8A is a schematic diagram showing part of pressure
chambers of a first multi-chamber polishing head and corresponding
part of a profile of a wafer;
[0053] FIG. 8B is a schematic diagram showing part of pressure
chambers of a second multi-chamber polishing head and corresponding
part of a profile of a wafer;
[0054] FIG. 9 is a schematic diagram showing an example of an
arrangement of the pressure chambers of the first multi-chamber
polishing head, and an example of an arrangement of the pressure
chambers of the second multi-chamber polishing head;
[0055] FIG. 10 is a diagram showing an arrangement of the pressure
chambers capable of performing a precise adjustment on a profile of
a peripheral portion (or an edge portion) of a wafer;
[0056] FIG. 11 is a diagram showing an arrangement of the pressure
chambers capable of performing a precise adjustment on a profile of
an intermediate portion of a wafer;
[0057] FIG. 12 is a diagram showing an arrangement of the pressure
chambers capable of performing a precise adjustment on a profile of
a central portion of a wafer;
[0058] FIG. 13 is a diagram illustrating an embodiment in which a
rigid-body polishing head is used in a first polishing unit and a
fourth polishing unit, and a second multi-chamber polishing head is
used in a second polishing unit and a third polishing unit;
[0059] FIG. 14 is a diagram illustrating exemplary combinations of
polishing heads to be selected in accordance with polishing
targets, such as an amount of wafer to be polished, a demand for
planarization of wafer surface, a demand for no defect such as
scratch, etc.;
[0060] FIG. 15 is a graph showing an example of a polishing-rate
distribution as obtained when a wafer is polished with use of an
elastic membrane having a stretchy shape of circumferential wall or
a low-hardness elastic membrane, and another example of a
polishing-rate distribution as obtained when a wafer is polished
with use of an elastic membrane having a non-stretchy shape of
circumferential wall or a high-hardness elastic membrane;
[0061] FIG. 16 is a cross-sectional view of an example of an
elastic membrane having a stretchy shape of circumferential
wall;
[0062] FIG. 17 is a cross-sectional view of an example of an
elastic membrane having a non-stretchy shape of circumferential
wall;
[0063] FIG. 18 is a cross-sectional view of a modification of the
elastic membrane of the polishing head, shown in FIG. 3;
[0064] FIG. 19 is a cross-sectional view partly showing the elastic
membrane and the retainer ring, shown in FIG. 3;
[0065] FIG. 20 is a cross-sectional view partly showing an elastic
membrane having a smaller diameter and a smaller pressing surface
than those of the elastic membrane shown in FIG. 19;
[0066] FIG. 21 is a cross-sectional view partly showing an elastic
membrane having the same diameter as, but having a smaller pressing
surface than those of the elastic membrane shown in FIG. 19;
[0067] FIG. 22 is a cross-sectional view showing an elastic
membrane whose contact portion, which is to be brought into contact
with a wafer, has approximately a right-angled edge;
[0068] FIG. 23 is a cross-sectional view showing an elastic
membrane whose contact portion, which is to be brought into contact
with a wafer, has an oval edge;
[0069] FIG. 24 is a cross-sectional view showing an elastic
membrane whose contact portion, which is to be brought into contact
with a wafer, has an inclined edge;
[0070] FIG. 25 is a diagram showing grooves formed in a bottom
surface of a retainer ring;
[0071] FIG. 26 is a diagram showing another example of grooves
formed in a bottom surface of a retainer ring;
[0072] FIG. 27 is a diagram showing yet another example of grooves
formed in the bottom of a retainer ring;
[0073] FIG. 28 is a diagram showing yet another example of grooves
formed in a bottom surface of a retainer ring;
[0074] FIG. 29 is a diagram showing yet another example of grooves
formed in a bottom surface of a retainer ring;
[0075] FIG. 30 is a cross-sectional view of a polishing head having
a retainer ring with a large radial width;
[0076] FIG. 31 is a cross-sectional view of a polishing head having
double retainer rings;
[0077] FIG. 32 is a cross-sectional view of a retainer ring whose
outer edge portion, which is to be brought into contact with a
polishing pad, has a tapered shape; and
[0078] FIG. 33 is a cross-sectional view of a retainer ring whose
outer edge portion, which is to be brought into contact with a
polishing pad, has an oval shape.
DESCRIPTION OF EMBODIMENTS
[0079] Embodiments will be described with reference to the
drawings. FIG. 1 is a view showing a polishing apparatus according
to an embodiment. As shown in FIG. 1, this polishing apparatus has
a housing 1 in approximately a rectangular shape. An interior space
of the housing 1 is divided by partitions 1a and 1b into a
load-unload section 2, a polishing section 3, and a cleaning
section 4. The polishing apparatus includes an operation controller
5 configured to control wafer processing operations.
[0080] The load-unload section 2 has front load sections 20 on
which substrate cassettes are placed, respectively. A plurality of
wafers (substrates) are stored in each substrate cassette. The
load-unload section 2 has a moving mechanism 21 extending along an
arrangement direction of the front load sections 20. A transfer
robot (or a loader) 22 is provided on the moving mechanism 21, so
that the transfer robot 22 can move along the arrangement direction
of the substrate cassettes. The transfer robot 22 moves on the
moving mechanism 21 so as to be able to access the substrate
cassettes mounted to the front load sections 20.
[0081] The polishing section 3 is an area where a wafer is
polished. This polishing section 3 includes a first polishing unit
3A, a second polishing unit 3B, a third polishing unit 3C, and a
fourth polishing unit 3D. As shown in FIG. 1, the first polishing
unit 3A includes a first polishing table 30A to which a polishing
pad 10, having a polishing surface, is attached, a polishing head
31A for holding a wafer and pressing the wafer against the
polishing pad 10 on the first polishing table 30A so as to polish
the wafer, a first polishing liquid supply nozzle 32A for supplying
a polishing liquid (e.g., slurry) and a dressing liquid (e.g., pure
water) onto the polishing pad 10, a first dresser 33A for dressing
the polishing surface of the polishing pad 10, and a first atomizer
34A for ejecting a mixture of a liquid (e.g., pure water) and a gas
(e.g., nitrogen gas) in an atomized state, onto the polishing
surface.
[0082] Similarly, the second polishing unit 3B includes a second
polishing table 30B to which a polishing pad 10 is attached, a
polishing head 31B, a second polishing liquid supply nozzle 32B, a
second dresser 33B, and a second atomizer 34B. The third polishing
unit 3C includes a third polishing table 30C to which a polishing
pad 10 is attached, a polishing head 31C, a third polishing liquid
supply nozzle 32C, a third dresser 33C, and a third atomizer 34C.
The fourth polishing unit 3D includes a fourth polishing table 30D
to which a polishing pad 10 is attached, a polishing head 31D, a
fourth polishing liquid supply nozzle 32D, a fourth dresser 33D,
and a fourth atomizer 34D.
[0083] The four polishing heads 31A, 31B, 31C, and 31D have
different structures as will be described later, while the first
polishing unit 3A, the second polishing unit 3B, the third
polishing unit 3C, and the fourth polishing unit 3D have basically
the same configuration as a whole. Therefore, the first polishing
unit 3A will be described below with reference to FIG. 2. FIG. 2 is
a perspective view schematically showing the first polishing unit
3A. In FIG. 2, the dresser 33A and the atomizer 34A are
omitted.
[0084] The polishing table 30A is coupled to a table motor 19
through a table shaft 30a, so that the polishing table 30A is
rotated by the table motor 19 in a direction indicated by arrow.
The table motor 19 is located below the polishing table 30A. The
polishing pad 10 is attached to an upper surface of the polishing
table 30A. The polishing pad 10 has an upper surface, which
provides a polishing surface 10a for polishing a wafer W. The
polishing head 31A is secured to a lower end of a head shaft 16A.
The polishing head 31A is configured to be able to hold the wafer W
on its lower surface by vacuum suction. The head shaft 16A is
elevated and lowered by an elevating mechanism (not shown in FIG.
2).
[0085] Polishing of the wafer W is performed as follows. The
polishing head 31A and the polishing table 30A are rotated in
directions as indicated by arrows, while the polishing liquid
(i.e., the slurry) is supplied onto the polishing pad 10 from the
polishing liquid supply nozzle 32A. In this state, the polishing
head 31A presses the wafer W against the polishing surface 10a of
the polishing pad 10. The surface of the wafer W is polished by a
mechanical action of abrasive grains contained in the polishing
liquid and a chemical action of the polishing liquid. After
polishing of the wafer W, dressing (or conditioning) of the
polishing surface 10a is performed by the dresser 33A. Further,
high-pressure fluid is supplied from the atomizer 34A onto the
polishing surface 10a to remove polishing debris and the abrasive
grains remaining on the polishing surface 10a.
[0086] Referring back to FIG. 1, a first linear transporter 6 is
arranged adjacent to the first polishing unit 3A and the second
polishing unit 3B. This first linear transporter 6 is configured to
transport the wafer between four transfer positions (i.e., a first
transfer position TP1, a second transfer position TP2, a third
transfer position TP3, and a fourth transfer position TP4). A
second linear transporter 7 is arranged adjacent to the third
polishing unit 3C and the fourth polishing unit 3D. This second
linear transporter 7 is configured to transport the wafer between
three transfer positions (i.e., a fifth transfer position TP5, a
sixth transfer position TP6, and a seventh transfer position
TP7).
[0087] The wafer is transported to the polishing units 3A and 3B by
the first linear transporter 6. The polishing head 31A of the first
polishing unit 3A is moved between a position above the polishing
table 30A and the second transfer position TP2 by the swinging
motion of the polishing head 31A. Therefore, transferring of the
wafer between the polishing head 31A and the first linear
transporter 6 is performed at the second transfer position TP2.
[0088] Similarly, the polishing head 31B of the second polishing
unit 3B is moved between a position above the polishing table 30B
and the third transfer position TP3, and transferring of the wafer
between the polishing head 31B and the first linear transporter 6
is performed at the third transfer position TP3. The polishing head
31C of the third polishing unit 3C is moved between a position
above the polishing table 30C and the sixth transfer position TP6,
and transferring of the wafer between the polishing head 31C and
the second linear transporter 7 is performed at the sixth transfer
position TP6. The polishing head 31D of the fourth polishing unit
3D is moved between a position above the polishing table 30D and
the seventh transfer position TP7, and transferring of the wafer
between the polishing head 31D and the second linear transporter 7
is performed at the seventh transfer position TP7.
[0089] A lifter 11 for receiving the wafer from the transfer robot
22 is provided adjacent to the first transfer position TP1. The
wafer is transported from the transfer robot 22 to the first linear
transporter 6 via the lifter 11. A shutter (not shown in the
drawing) is provided on the partition 1a at a position between the
lifter 11 and the transfer robot 22. When the wafer is to be
transported, this shutter is opened to allow the transfer robot 22
to deliver the wafer to the lifter 11.
[0090] A swing transporter 12 is provided between the first linear
transporter 6, the second linear transporter 7, and the cleaning
section 4. Transporting of the wafer from the first linear
transporter 6 to the second linear transporter 7 is performed by
the swing transporter 12. The wafer is transported to the third
polishing unit 3C and/or the fourth polishing unit 3D by the second
linear transporter 7.
[0091] A buffer stage 72 for the wafer is disposed beside the swing
transporter 12. This buffer stage 72 is mounted to a
non-illustrated frame. As shown in FIG. 1, the buffer stage 72 is
arranged adjacent to the first linear transporter 6 and located
between the first linear transporter 6 and the cleaning section 4.
The swing transporter 12 is configured to transport the wafer
between the fourth transfer position TP4, the fifth transfer
position TP5, and the buffer stage 72.
[0092] The wafer, placed on the buffer stage 72, is transported to
the cleaning section 4 by a first transfer robot 77 of the cleaning
section 4. As shown in FIG. 1, the cleaning section 4 includes a
first cleaning unit 73 and a second cleaning unit 74 for cleaning
the polished wafer with a cleaning liquid, and a drying unit 75 for
drying the cleaned wafer. The first transfer robot 77 is configured
to transport the wafer from the buffer stage 72 to the first
cleaning unit 73 and further transport the wafer from the first
cleaning unit 73 to the second cleaning unit 74. A second transfer
robot 78 is arranged between the second cleaning unit 74 and the
drying unit 75. This second transfer robot 78 is operable to
transport the wafer from the second cleaning unit 74 to the drying
unit 75.
[0093] Next, operations of the polishing apparatus will be
described. The transfer robot 22 removes a wafer from the substrate
cassette, and transports the wafer to the first linear transporter
6. The wafer is transported to at least two of the polishing units
3A to 3D via the first linear transporter 6 and/or the second
linear transporter 7. The wafer is polished in at least two of the
polishing units 3A to 3D.
[0094] The polished wafer is transported to the first cleaning unit
73 and the second cleaning unit 74 via the first linear transporter
6 and/or the second linear transporter 7, the swing transporter 12,
and the transfer robot 77. The polished wafer is cleaned by the
first cleaning unit 73 and the second cleaning unit 74
successively. Further, the cleaned wafer is transported by the
transfer robot 78 to the drying unit 75, where the cleaned wafer is
dried.
[0095] The dried wafer is removed from the drying unit 75 by the
transfer robot 22, and then returned to the substrate cassette on
the front load section 20. In this manner, a sequence of processes
including polishing, cleaning, and drying is performed on the
wafer.
[0096] The transfer robot 22, the first linear transporter 6, the
second linear transporter 7, and the swing transporter 12
constitute a transporting device that transports a wafer to at
least two of the polishing units 3A to 3D. Operation of this
transporting device is controlled by the operation controller 5.
The transporting device is configured to transport the wafer to at
least two of the four polishing units 3A, 3B, 3C, and 3D in
accordance with a predetermined transporting route.
[0097] The four polishing heads 31A, 31B, 31C, and 31D have
different structures. The polishing heads 31A, 31B, 31C, and 31D
will now be described. FIG. 3 is a cross-sectional view showing the
polishing head 31A. The polishing head 31A includes a rigid body
101 having a circular flat surface 101a, a circular wafer holding
material (or a substrate holding material) 103 attached to the flat
surface 101a and used to press a wafer W against the polishing pad
10, and a guide ring 105 for holding the wafer W without contact
with the polishing pad 10. The wafer holding material (substrate
holding material) 103 is also called a backing film.
[0098] The rigid body 101 is coupled via a universal joint 110 to
the lower end of the head shaft 16A. Accordingly, the entirety of
the polishing head 31A can freely tilt with respect to the head
shaft 16A. The head shaft 16A is coupled to a vertically-moving
mechanism 120. This vertically-moving mechanism 120 is configured
to elevate and lower the head shaft 16A and the polishing head 31A,
and to generate a predetermined downward load. An air cylinder or a
combination of a servo motor and a ball screw mechanism, for
example, may be used as the vertically-moving mechanism 120.
[0099] The circular wafer holding material 103 is brought into
contact with a back surface (i.e., a surface opposite to a surface
to be polished) of the wafer W. When the vertically-moving
mechanism 120 applies the downward load to the polishing head 31A
through the head shaft 16A with the wafer holding material 103 in
contact with the back surface of the wafer W, the polishing head
31A presses the surface, to be polished, of the wafer W against the
polishing pad 10. The polishing pressure is transmitted from the
flat surface 101a (lower surface) of the rigid body 101 to the
wafer W through the wafer holding material 103. The polishing head
31A may be hereinafter sometimes referred to as rigid-body
polishing head.
[0100] FIG. 4 is a cross-sectional view showing the polishing head
31B. The polishing head 31B includes a disk-shaped carrier 201, a
plate 209 disposed under the carrier 201, a circular flexible
elastic membrane 203 that forms a single pressure chamber P1 under
the plate 209, and a retainer ring 205 which is secured to the
carrier 201 so as to surround a wafer W and which is to press the
polishing pad 10. The elastic membrane 203 is attached to the plate
209, and the pressure chamber P1 is formed between the plate 209
and the elastic membrane 203. The pressure chamber P1 is coupled to
a fluid line 231 so that a pressurized gas (e.g., pressurized air)
having a regulated pressure is supplied through the fluid line 231
into the pressure chamber P1. A vacuum line 232 is coupled to the
fluid line 231 so that negative pressure is created in the pressure
chamber P1 by the vacuum line 232.
[0101] The retainer ring 205 is secured to the lower surface of the
carrier 201. The carrier 201 is coupled via a universal joint 210
to a lower end of a head shaft 16B. Accordingly, the carrier 201
and the retainer ring 205 can freely tilt with respect to the head
shaft 16B. The head shaft 16B is coupled to a vertically-moving
mechanism 235. This vertically-moving mechanism 235 is configured
to elevate and lower the head shaft 16B and the polishing head 31B,
and to generate a predetermined downward load. An air cylinder or a
combination of a servo motor and a ball screw mechanism, for
example, may be used as the vertically-moving mechanism 235. When
the vertically-moving mechanism 235 applies a downward load to the
polishing head 31B through the head shaft 16B, the retainer ring
205 presses the polishing pad 10.
[0102] The carrier 201 is coupled to the plate 209 by an annular
diaphragm 220, and a pressure chamber P2 is formed between the
carrier 201 and the plate 209. The pressure chamber P2 is coupled
to a fluid line 238 so that a pressurized gas (e.g., pressurized
air) having a regulated pressure is supplied through the fluid line
238 into the pressure chamber P2. A vacuum line 239 is coupled to
the fluid line 238 so that negative pressure is created in the
pressure chamber P2 by the vacuum line 239. The entirety of the
plate 209 and the elastic membrane 203 can move in the vertical
directions in accordance with a change in the pressure in the
pressure chamber P2.
[0103] As can be seen from FIG. 4, the plate 209, the elastic
membrane 203, and the wafer W can flexibly tilt with respect to the
carrier 201 and the retainer ring 205, because the plate 209 is
coupled to the carrier 201 via the diaphragm 220. The lower surface
of the elastic membrane (or membrane) 203 is brought into contact
with the back surface (i.e., the surface opposite to the
to-be-polished surface) of the wafer W, and the elastic membrane
203 presses the to-be-polished surface of the wafer W against the
polishing pad 10. The polishing pressure is generated by the
pressure developed in the pressure chamber P1, and is applied from
the elastic membrane 203 to the wafer W. The polishing head 31B may
be hereinafter sometimes referred to as single-chamber polishing
head.
[0104] The above-described rigid-body polishing head 31A and
single-chamber polishing head 31B are uniform-pressure polishing
heads which apply a uniform polishing pressure to the entire
surface of the wafer W. The uniform-pressure polishing heads 31A,
31B have a relatively simple structure, and therefore entail low
maintenance costs. For example, in the case of the rigid-body
polishing head 31A, the guide ring 105 does not touch the polishing
pad 10, and therefore does not wear. Moreover, the polishing head
31A is inexpensive because of its simple construction using the
wafer holding material 103. In the case of the polishing head 31B,
both the initial cost and maintenance cost are low because of the
few pressure chambers.
[0105] FIG. 5 is a cross-sectional view showing the polishing head
31C. The polishing head 31C includes a disk-shaped carrier 301, a
plate 309 disposed below the carrier 301, a circular flexible
elastic membrane (or membrane) 303 that forms a plurality of
pressure chambers C1, C2, C3, C4 under the plate 309, and a
retainer ring 305 which is secured to the carrier 301 such that it
surrounds a wafer W and which is to press the polishing pad 10. The
elastic membrane 303 is attached to the plate 309, and the pressure
chambers C1, C2, C3, C4 are formed between the elastic membrane 303
and the plate 309.
[0106] The elastic membrane 303 has a plurality of annular
partitions 303a by which the pressure chambers C1, C2, C3, C4 are
isolated from each other. The central pressure chamber C1 has a
circular shape, while the other pressure chambers C2, C3, C4 each
have an annular shape. The pressure chambers C1, C2, C3, C4 are
arranged concentrically. There is no particular limitation on the
number of pressure chambers of the polishing head 31C, so long as
the polishing head 31C has at least two pressure chambers.
[0107] The pressure chambers C1, C2, C3, C4 are coupled to fluid
lines F1, F2, F3, F4 so that a pressurized gas (e.g., pressurized
air) having regulated pressures is supplied through the fluid lines
F1, F2, F3, F4 into the pressure chambers C1, C2, C3, C4. Vacuum
lines V1, V2, V3, V4 are coupled to the fluid lines F1, F2, F3, F4
so that negative pressure is created in the pressure chambers C1,
C2, C3, C4 by the vacuum lines V1, V2, V3, V4. The internal
pressures of the pressure chambers C1, C2, C3, C4 can be changed
independently of each other, so that the pressure chambers C1, C2,
C3, C4 can independently regulate polishing pressures on the four
corresponding areas of the wafer W, i.e., a central portion, an
inner intermediate portion, an outer intermediate portion, and a
peripheral portion.
[0108] The carrier 301 and the plate 309 are coupled by an annular
diaphragm 320, and a pressure chamber C5 is formed between the
carrier 301 and the plate 309. The pressure chamber C5 is coupled
to a fluid line F5 so that a pressurized gas (e.g., pressurized
air) having a regulated pressure is supplied through the fluid line
F5 into the pressure chamber C5. A vacuum line V5 is coupled to the
fluid line F5 so that negative pressure is created in the pressure
chamber C5 by the vacuum line V5. The entirety of the plate 309 and
the elastic membrane 303 can move in the vertical directions in
accordance with a change in the pressure in the pressure chamber
C5.
[0109] The retainer ring 305 is secured to the lower surface of the
carrier 301. The carrier 301 is coupled via a universal joint 310
to a lower end of a head shaft 16C. Accordingly, the carrier 301
and the retainer ring 305 can freely tilt with respect to the head
shaft 16C. As can be seen from FIG. 5, the plate 309, the elastic
membrane 303, and the wafer W can flexibly tilt with respect to the
carrier 301 and the retainer ring 305 because the plate 309 is
coupled to the carrier 301 via the diaphragm 320.
[0110] The head shaft 16C is coupled to a vertically-moving
mechanism 325. This vertically-moving mechanism 325 is configured
to elevate and lower the head shaft 16C and the polishing head 31C,
and to generate a predetermined downward load. An air cylinder or a
combination of a servo motor and a ball screw mechanism, for
example, may be used as the vertically-moving mechanism 325. When
the vertically-moving mechanism 325 applies a downward load to the
polishing head 31C through the head shaft 16C, the retainer ring
305 presses the polishing pad 10. During polishing of the wafer W,
the elastic membrane 303 presses the wafer W against the polishing
pad 10 while the retainer ring 305 presses the polishing pad 10 in
an area around the wafer W. The polishing head 31C may be
hereinafter sometimes referred to as first multi-chamber polishing
head.
[0111] FIG. 6 is a cross-sectional view showing the polishing head
31D. The polishing head 31D includes a disk-shaped carrier 401, a
circular flexible elastic membrane (or membrane) 403 that forms a
plurality of pressure chambers D1, D2, D3, D4 under the carrier
401, and a retainer ring 405 which is disposed such that it
surrounds a wafer W and which is to press the polishing pad 10. The
pressure chambers D1, D2, D3, D4 are formed between the elastic
membrane 403 and a lower surface of the carrier 401.
[0112] The elastic membrane 403 has a plurality of annular
partitions 403a by which the pressure chambers D1, D2, D3, D4 are
isolated from each other. The central pressure chamber D1 has a
circular shape, while the other pressure chambers D2, D3, D4 each
have an annular shape. The pressure chambers D1, D2, D3, D4 are
arranged concentrically. There is no particular limitation on the
number of pressure chambers of the polishing head 31D, so long as
the polishing head 31D has at least two pressure chambers.
[0113] The pressure chambers D1, D2, D3, D4 are coupled to fluid
lines G1, G2, G3, G4 so that a pressurized gas (e.g., pressurized
air) having regulated pressures is supplied through the fluid lines
G1, G2, G3, G4 into the pressure chambers D1, D2, D3, D4. Vacuum
lines U1, U2, U3, U4 are coupled to the fluid lines G1, G2, G3, G4
so that negative pressure is created in the pressure chambers D1,
D2, D3, D4 by the vacuum lines U1, U2, U3, U4. The internal
pressures of the pressure chambers D1, D2, D3, D4 can be changed
independently of each other, so that the pressure chambers D1, D2,
D3, D4 can independently regulate polishing pressures on the four
corresponding areas of the wafer W, i.e., a central portion, an
inner intermediate portion, an outer intermediate portion and a
peripheral portion.
[0114] An annular elastic membrane 406 is disposed between the
retainer ring 405 and the carrier 401. An annular pressure chamber
D5 is formed in the elastic membrane 406. The pressure chamber D5
is coupled to a fluid line G5 so that a pressurized gas (e.g.,
pressurized air) having a regulated pressure is supplied through
the fluid line G5 into the pressure chamber D5. A vacuum line U5 is
coupled to the fluid line G5 so that negative pressure is created
in the pressure chamber D5 by the vacuum line U5. The entire
retainer ring 405 can move in the vertical directions in accordance
with a change in the pressure in the pressure chamber D5. The
pressure in the pressure chamber D5 acts on the retainer ring 405,
which can directly press the polishing pad 10 independently of the
elastic membrane (or membrane) 403. During polishing of the wafer
W, the elastic membrane 403 presses the wafer W against the
polishing pad 10 while the retainer ring 405 presses the polishing
pad 10 in an area around the wafer W.
[0115] The carrier 401 is fixed to a lower end of a head shaft 16D.
Accordingly, the carrier 401 and the retainer ring 405 cannot tilt
with respect to the head shaft 16D. The head shaft 16D is coupled
to a vertically-moving mechanism 410. The vertically-moving
mechanism 410 is configured to elevate and lower the head shaft 16D
and the polishing head 31D, and to locate the polishing head 31D at
a predetermined height. A combination of a servo motor and a ball
screw mechanism may be used as the vertically-moving mechanism 410
which functions as a polishing head positioning mechanism. The
height of the polishing head 31D herein refers to the height from
the polishing surface (upper surface) 10a of the polishing pad
10.
[0116] After positioning of the polishing head 31D at a
predetermined height is performed by means of the vertically-moving
mechanism 410, the pressurized gas is supplied to the pressure
chambers D1 to D5. During polishing of the wafer W, the elastic
membrane 403 receives the pressures in the pressure chambers D1 to
D4 and presses the wafer W against the polishing pad 10, and the
retainer ring 405 receives the pressure in the pressure chamber D5
and presses the polishing pad 10. The polishing head 31D will be
hereinafter sometimes referred to as second multi-chamber polishing
head.
[0117] While the above-described first multi-chamber polishing head
31C and second multi-chamber polishing head 31D each have a
complicated construction, these polishing heads 31C, 31D are
superior to the above-described uniform-pressure polishing heads
31A, 31B in that the polishing heads 31C, 31D can control polishing
of a wafer W with precision. However, the elastic membranes 303,
403 of the multi-chamber polishing heads 31C, 31D are costly
because the multi-chamber polishing heads 31C, 31D include the
plurality of pressure chambers. Furthermore, the complicated
constructions of the multi-chamber polishing heads 31C, 31D entail
high maintenance costs. The polishing apparatus of this embodiment
includes not only the high-performance multi-chamber polishing
heads 31C, 31D, but also the uniform-pressure polishing heads 31A,
31B which have low initial cost and maintenance cost. Therefore,
the cost of the entire polishing apparatus and the cost for
processing of a wafer W can be reduced.
[0118] In addition, a life of a polishing head can increase and the
maintenance cost can be reduced by selecting a polishing head
according to the type of processing of a wafer W. The polishing
heads 31A, 31B shown in FIGS. 3 and 4 are preferably used in rough
polishing and final polishing of a wafer W. In rough polishing of a
wafer W, the wafer W is polished at a high polishing rate (or a
high removal rate). In such rough polishing, the retainer ring
wears fast. The use of the polishing heads 31A, 31B in rough
polishing can decrease the frequency of use of the polishing heads
31C, 31D. Accordingly, the frequency of maintenance of the
polishing heads 31C, 31D that entail high maintenance costs can be
decreased, whereby the total maintenance cost can be reduced. The
rigid-body polishing head 31A shown in FIG. 3 is especially suited
for final polishing of a wafer W. This is because the guide ring
105 does not touch the polishing pad 10, and therefore no wear
particles of the guide ring 105 are produced during polishing of a
wafer W.
[0119] There is usually no need to perform profile control of a
wafer in final polishing of the wafer. Therefore, there is no need
to use the polishing heads 31C, 31D having the plurality of
pressure chambers capable of controlling the wafer profile. The
polishing heads 31A, 31B are therefore used in final polishing, so
that the frequency of maintenance on the polishing heads 31C, 31D
can be decreased and the total maintenance cost can be reduced.
[0120] An exemplary polishing process which involves polishing a
wafer with use of at least two of the four different types of
polishing heads 31A, 31B, 31C, 31D will now be described with
reference to FIG. 7. FIG. 7 is a diagram illustrating the exemplary
polishing process comprising rough polishing of a wafer, first
profile control polishing of the wafer, second profile control
polishing of the wafer, and final polishing of the wafer, performed
in this order with use of the four polishing heads 31A, 31B, 31C,
31D. In this polishing process a wafer is transported to the first
polishing unit 3A, the third polishing unit 3C, the fourth
polishing unit 3D and the second polishing unit 3B in this order.
Rough polishing of the wafer is performed with use of the polishing
head 31A in the first polishing unit 3A, first profile control
polishing of the wafer is performed with use of the polishing head
31C in the third polishing unit 3C, second profile control
polishing of the wafer is performed with use of the polishing head
31D in the fourth polishing unit 3D, and final polishing of the
wafer is performed with use of the polishing head 31B in the second
polishing unit 3B.
[0121] The second profile control polishing is performed for fine
correction of the wafer profile obtained by the first profile
control polishing. In order to ensure the effect of the second
profile control polishing, the arrangement of the pressure chambers
of the second multi-chamber polishing head 31D preferably differs
from the arrangement of the pressure chambers of the first
multi-chamber polishing head 31C. This is because the pressure
chambers D1 to D4 of the polishing head 31D are to press those
portions of a wafer to which the pressures in the pressure chambers
C1 to C4 of the polishing head 31C are not fully applied. This will
now be described with reference to FIGS. 8A and 8B.
[0122] FIG. 8A is a schematic diagram showing part of the pressure
chambers C1 to C4 of the first multi-chamber polishing head 31C and
the corresponding part of a profile of a wafer. As shown in FIG.
8A, the pressure chambers C1, C2 are separated by the partition
303a of the elastic membrane 303. This partition 303a prevents the
pressures in the pressure chambers C1, C2 from being fully applied
to the wafer. As a result, the polishing rate of the wafer is lower
at a position corresponding to the partition 303a (i.e., the
boundary between the pressure chambers C1, C2). In order to improve
such a local decrease in the polishing rate, the pressure chamber
D2 of the polishing head 31D is located at a position corresponding
to the position of the boundary between the pressure chambers C1,
C2 of the polishing head 31C, as shown in FIG. 8B. With these
arrangements, the pressure in the pressure chamber D2 of the
polishing head 31D can be applied to the portion of the wafer that
has previously been polished at a locally low polishing rate,
thereby increasing the polishing rate at that portion of the
wafer.
[0123] FIG. 9 is a schematic diagram showing an example of the
arrangement of the pressure chambers C1, C2, C3, C4 of the first
multi-chamber polishing head 31C, and an example of the arrangement
of the pressure chambers D1, D2, D3, D4 of the second multi-chamber
polishing head 31D. As shown in FIG. 9, the arrangement of the
pressure chambers of the first multi-chamber polishing head 31C
differs from the arrangement of the pressure chambers of the second
multi-chamber polishing head 31D. Specifically, the pressure
chambers D1, D2, D3, D4 of the second multi-chamber polishing head
31D are arranged at positions corresponding to the boundaries
between the pressure chambers C1, C2, C3, C4 of the first
multi-chamber polishing head 31C. Because of the difference in the
arrangement of the pressure chambers, one of the two polishing
heads 31C, 31D can perform polishing for correction or fine
adjustment of a wafer profile.
[0124] The two polishing heads 31C, 31D can press different areas
of a wafer against the respective polishing pads 10. Thus, the use
of the two polishing heads 31C, 31D, having the pressure chambers
in different arrangements, can achieve substantially the same
effect as that achieved by using a single polishing head having an
increased number of pressure chambers. The profile of the wafer can
therefore be controlled more precisely.
[0125] In order to control a profile of a wafer more precisely in a
particular area of the wafer, the pressure chambers D1, D2, D3, D4
may be arranged densely in an area corresponding to that particular
area of the wafer. FIG. 10 shows the arrangement of the pressure
chambers D1, D2, D3, D4 which is capable of performing a precise
adjustment of a profile of a peripheral portion (or an edge
portion) of a wafer, FIG. 11 shows the arrangement of the pressure
chambers D1, D2, D3, D4 which is capable of performing a precise
adjustment of a profile of an intermediate portion of a wafer, and
FIG. 12 shows the arrangement of the pressure chambers D1, D2, D3,
D4 which is capable of performing a precise adjustment of a profile
of a central portion of a wafer. As will be appreciated from FIGS.
10 through 12, at least two of the pressure chambers D1, D2, D3, D4
are arranged at positions corresponding to a position of one of the
pressure chambers C1, C2, C3, C4.
[0126] The above-described combination and arrangement of the four
different types of polishing heads 31A, 31B, 31C, 31D may be
arbitrarily changed. For example, as shown in FIG. 13, it is
possible to dispose the rigid-body polishing head 31A in the first
polishing unit 3A, the second multi-chamber polishing head 31D in
the second polishing unit 3B, the second multi-chamber polishing
head 31D in the third polishing unit 3C, and the rigid-body
polishing head 31A in the fourth polishing unit 3D. Thus, in this
embodiment, the two rigid-body polishing heads 31A and the two
second multi-chamber polishing heads 31D are used, while the
single-chamber polishing head 31B and the first multi-chamber
polishing head 31C are not used. The arrangement of the pressure
chambers of one of the two second multi-chamber polishing heads 31D
differs from the arrangement of the pressure chambers of the other
second multi-chamber polishing head 31D as shown in FIG. 9.
Therefore, the two second multi-chamber polishing heads 31D can
perform polishing for positive control (or production) of a profile
of a wafer and polishing for fine adjustment of the profile of the
wafer.
[0127] One or both of the two rigid-body polishing heads 31A used
in the embodiment of FIG. 13 may be replaced with the
single-chamber polishing head(s) 31B. One or both of the two second
multi-chamber polishing heads 31D used in the embodiment of FIG. 13
may be replaced with the first multi-chamber polishing head(s)
31C.
[0128] Examples of polishing of a wafer using the combination of
polishing heads shown in FIG. 13 will now be described. FIG. 14 is
a diagram illustrating exemplary combinations of polishing heads to
be selected in accordance with polishing targets, such as an amount
of polishing of a wafer, a demand for planarization of a wafer
surface, a demand for no defect, e.g., scratch, etc. Example 1
shown in FIG. 14 represents an exemplary selection of polishing
heads in a case of a large amount of polishing of a wafer, a high
demand for planarization of a wafer surface and a high demand for
no defect. In this example 1, all of the four polishing heads of
the four polishing units 3A, 3B, 3C, 3D are used to polish a
wafer.
[0129] Example 2 represents an exemplary selection of polishing
heads in a case of a small amount of polishing of a wafer, a high
demand for planarization of a wafer surface and a high demand for
no defect. In this example 2, the rigid-body polishing head of the
first polishing unit 3A is not used, while the second multi-chamber
polishing head of the second polishing unit 3B, the second
multi-chamber polishing head of the third polishing unit 3C, and
the rigid-body polishing head of the fourth polishing unit 3D are
used. Example 3 represents an exemplary selection of polishing
heads in a case of a small amount of polishing of a wafer, a low
demand for planarization of a wafer surface and a high demand for
no defect. In this Example 3, the rigid-body polishing head of the
first polishing unit 3A and the second multi-chamber polishing head
of the third polishing unit 3C are not used, while the second
multi-chamber polishing head of the second polishing unit 3B and
the rigid-body polishing head of the fourth polishing unit 3D are
used. Example 4 represents an exemplary selection of polishing
heads in a case of a large amount of polishing of a wafer, a low
demand for planarization of a wafer surface, and a low demand for
no defect. In this example 4, the second multi-chamber polishing
head of the third polishing unit 3C and the rigid-body polishing
head of the fourth polishing unit 3D are not used, while the
rigid-body polishing head of the first polishing unit 3A and the
second multi-chamber polishing head of the second polishing unit 3B
are used. Example 5 represents an exemplary selection of polishing
heads in a case of a small amount of polishing of a wafer, a high
demand for planarization of a wafer surface, and a low demand for
no defect. In this example 5, the rigid-body polishing heads of the
first polishing unit 3A and the fourth polishing unit 3D are not
used, while the second multi-chamber polishing heads of the second
polishing unit 3B and the third polishing unit 3C are used.
[0130] Another embodiment will now be described. In this embodiment
the second multi-chamber polishing head shown in FIG. 6 is used in
each of the first polishing unit 3A, the second polishing unit 3B,
the third polishing unit 3C, and the fourth polishing unit 3D. The
polishing head shown in FIG. 4 or the polishing head shown in FIG.
5 may be used instead of the polishing head shown in FIG. 6.
[0131] The first polishing head 31A, the second polishing head 31B,
the third polishing head 31C and the fourth polishing head 31D,
which are the second multi-chamber polishing heads, have basically
the same construction; however, two of the four polishing heads 31A
to 31D each have the elastic membrane 403 whose structure differs
from the elastic membranes 403 of the other two polishing heads.
For example, the first polishing head 31A and the third polishing
head 31C have the elastic membranes 403 of the same structure, and
the second polishing head 31B and the fourth polishing head 31D
have the elastic membranes 403 of the same structure. The structure
of the elastic membranes 403 of the first polishing head 31A and
the third polishing head 31C differs from that of the elastic
membranes 403 of the second polishing head 31B and the fourth
polishing head 31D. In this specification, the structure of the
elastic membrane 403 includes at least size, hardness and shape of
the elastic membrane 403.
[0132] Two of the four polishing heads 31A to 31D may each have the
retainer ring 405 (see FIG. 6) whose structure differs from the
retainer rings 405 of the other two polishing heads. For example,
the first polishing head 31A and the third polishing head 31C have
the retainer rings 405 of the same structure, and the second
polishing head 31B and the fourth polishing head 31D have the
retainer rings 405 of the same structure. The structure of the
retainer rings 405 of the first polishing head 31A and the third
polishing head 31C differs from that of the retainer rings 405 of
the second polishing head 31B and the fourth polishing head 31D. In
this specification, the structure of the retainer ring 405 includes
at least shape and material of the retainer ring 405, and shape and
the number of grooves (described later) formed in the bottom of the
retainer ring 405.
[0133] The following problem can arise when the polishing pressure
is changed between a first-stage polishing and a second-stage
polishing. In high-pressure polishing, the elastic membrane 403 may
be deformed greatly or the elastic membrane 403 may be twisted. As
a result, a pressing force may not be applied uniformly to a wafer.
Therefore, it is desirable that a polishing head for performing the
high-pressure polishing use an elastic membrane having a higher
hardness than the elastic membranes of the other polishing heads.
The elastic membrane having a high hardness is less likely to be
deformed or twisted, and therefore can apply a uniform pressing
force to a wafer.
[0134] The elastic membrane 403 has, in its lower surface, holes
for attracting a wafer by suction. In particular, when a vacuum is
created in the pressure chamber D3 shown in FIG. 6, a wafer is
attracted to the elastic membrane 403 through the holes. If the
elastic membrane 403 is deformed or twisted during polishing of the
wafer, the pressurized fluid can leak through the holes. In the
event of leakage of the pressurized fluid, the elastic membrane 403
cannot press the wafer at an appropriate pressing force. This may
result in a decrease in the polishing rate or variation in the
polishing rate in the wafer surface, leading to a significant
decrease in the productivity of the polishing apparatus. The use of
the high-hardness elastic membrane 403 is effective also in
preventing the leakage of the pressurized fluid from the elastic
membrane 403 during polishing.
[0135] The hardness of the elastic membrane 403 also affects
extension of the elastic membrane 403 in the vertical direction.
Thus, a difference in the hardness of the elastic membrane of the
polishing head may produce a difference in a polishing profile of a
peripheral portion of a wafer. In general, an elastic membrane
having a high hardness is not stretchy in its edge portion.
Therefore, use of a high-hardness elastic membrane can result in a
low pressure on a peripheral portion of a wafer, thus enabling a
low polishing rate of the peripheral portion of the wafer. In
contrast, an elastic membrane having a relatively low hardness is
stretchy in its edge portion. Therefore, use of a low-hardness
elastic membrane can result in a relatively high pressure on a
peripheral portion of a wafer, thus increasing a pressing force
applied to the peripheral portion of the wafer, as compared to the
use of the high-hardness elastic membrane. Therefore, the use of
the low-hardness elastic membrane can increase the polishing rate
of the peripheral portion of the wafer, as compared to the use of
the high-hardness elastic membrane.
[0136] Because a low-hardness elastic membrane is stretchy as
compared to a high-hardness elastic membrane, a pressure loss upon
the supply of the pressurized fluid into the pressure chamber is
low. Therefore, in the case of low-pressure polishing, the use of
the low-hardness elastic membrane may decrease a variation in the
polishing rate along the circumferential direction of the wafer.
High-pressure polishing herein refers to a polishing process
performed with use of a pressurized fluid having a pressure of not
less than approximately 2 psi (about 140 hPa), while low-pressure
polishing herein refers to a polishing process performed with use
of a pressurized fluid having a pressure of less than approximately
2 psi (about 140 hPa). A high-hardness elastic membrane herein
refers to an elastic membrane having a Type A durometer of not less
than 60 points, determined in accordance with ISO 7619, while a
low-hardness elastic membrane herein refers to an elastic membrane
having a Type A durometer of less than 60 points.
[0137] An elastic membrane to be used in the low-pressure polishing
is preferably selected based on a combination of process
consumables. For example, when using process consumables likely to
be over-polishing of a peripheral portion of a wafer in the
first-stage polishing, and using process consumables likely to be
under-polishing of the peripheral portion of the wafer in the
second-stage polishing, it is preferred to use a high-hardness
elastic membrane in the first-stage polishing and use a
low-hardness elastic membrane in the second-stage polishing.
Depending on the combination of process consumables to be used, it
is possible to use a low-hardness elastic membrane in the
first-stage polishing and use a high-hardness elastic membrane in
the second-stage polishing. Examples of the process consumables
include a polishing pad, a polishing liquid, a dresser, etc.
[0138] A hardness of an elastic membrane to be used may be selected
based on an initial film-thickness distribution before polishing.
For example, when polishing a wafer having a large initial film
thickness in a peripheral portion, a low-hardness elastic membrane
may be used in the first-stage polishing to increase the polishing
rate of the peripheral portion of the wafer, and a high-hardness
elastic membrane may be used in the second-stage polishing to
decrease the polishing rate of the peripheral portion of the
wafer.
[0139] Specific examples of elastic membranes 403 having different
shapes of circumferential walls will now be described. FIG. 15 is a
graph showing an exemplary polishing-rate distribution as obtained
when a wafer is polished with use of an elastic membrane 403 having
a circumferential wall of stretchy shape or with use of a
low-hardness elastic membrane 403, and an exemplary polishing-rate
distribution as obtained when a wafer is polished with use of an
elastic membrane 403 having a circumferential wall whose shape is
less stretchy or with use of a high-hardness elastic membrane 403.
FIG. 16 is a cross-sectional view of an exemplary elastic membrane
403 having a circumferential wall of stretchy shape, and FIG. 17 is
a cross-sectional view of an exemplary elastic membrane 403 having
a circumferential wall whose shape is less stretchy.
[0140] The elastic membranes 403 shown in FIGS. 16 and 17 each
include an outermost first circumferential wall 403a-1, a second
circumferential wall 403a-2 located inside the first
circumferential wall 403a-1, a third circumferential wall 403a-3
located inside the second circumferential wall 403a-2, a fourth
circumferential wall 403a-4 located inside the third
circumferential wall 403a-3, and a circular contact portion 411 to
be brought into contact with a wafer. Pressure chamber D4 is formed
between the first circumferential wall 403a-1 and the second
circumferential wall 403a-2, pressure chamber D3 is formed between
the second circumferential wall 403a-2 and the third
circumferential wall 403a-3, and pressure chamber D2 is formed
between the third circumferential wall 403a-3 and the fourth
circumferential wall 403a-4. In the examples shown in FIGS. 16 and
17, the holes formed in the lower surface of each elastic membrane
403 are located under the pressure chamber D1.
[0141] A difference in shape between the elastic membranes 403 of
FIGS. 16 and 17 resides in a thickness of the outermost first
circumferential wall 403a-1. The first circumferential wall 403a-1
having an increased thickness can achieve a polishing profile in
which a polishing rate of a peripheral portion of a wafer is low.
For example, the thickness of the first circumferential wall 403a-1
of FIG. 16 may be not less than 0.5 mm and not more than 1.5 mm,
while the thickness of the first circumferential wall 403a-1 of
FIG. 17 may be not less than 1.5 mm and not more than 4 mm.
[0142] Another difference between the elastic membranes 403 of
FIGS. 16 and 17 resides in a connecting position of the second
circumferential wall 403a-2. In the example shown in FIG. 16, the
first circumferential wall 403a-1, the second circumferential wall
403a-2, the third circumferential wall 403a-3 and the fourth
circumferential wall 403a-4 are all connected to the contact
portion 411, while in the example shown in FIG. 17, the second
circumferential wall 403a-2 is connected to the first
circumferential wall 403a-1, and the first circumferential wall
403a-1, the third circumferential wall 403a-3, and the fourth
circumferential wall 403a-4 are connected to the contact portion
411. With the shape shown in FIG. 17, the polishing rate of the
wafer changes in a narrower area with a change in the pressure in
the pressure chamber D4, compared to the shape shown in FIG.
16.
[0143] As discussed above, the area of the wafer, which responds to
a change in the pressure in the pressure chamber D4, differs
between the elastic membranes 403 of FIGS. 16 and 17 due to the
difference in the connecting position of the second circumferential
wall 403a-2. Therefore, the use of these elastic membranes 403 in
multistage polishing makes it possible to obtain polishing
characteristics that meet various demands. For example, in the
first-stage polishing, the elastic membrane 403 of FIG. 16 is used
and the pressure in the pressure chamber D4 is made high to
increase a polishing rate of a wafer in a relatively wide area. In
the second-stage polishing, the elastic membrane 403 of FIG. 17 is
used and the pressure in the pressure chamber D4 is made low to
decrease the polishing rate of the wafer in a relatively narrow
area. It is possible to interchange the elastic membranes 403 used
in the first-stage polishing and the second-stage polishing, or to
change the pressures in the pressure chambers D4.
[0144] A specific example of elastic membrane 403 whose contact
portion 411 to be brought into contact with a wafer has a different
thickness will now be described. FIG. 18 is a cross-sectional view
of another example of the elastic membrane 403 of the polishing
head shown in FIG. 6. The elastic membrane 403 shown in FIG. 18 has
a contact portion 411 which is thicker than the contact portion 411
of the elastic membrane 403 shown in FIG. 6. An increase in the
thickness of the contact portion 411 of the elastic membrane 403
produces a similar effect to that produced by an increase in the
hardness of the elastic membrane 403. Specifically, the thick
contact portion 411 can reduce a deformation or twist of the
elastic membrane 403. In particular, the elastic membrane 403
having the thick contact portion 411 can prevent the leakage of the
pressurized fluid and can prevent a non-uniform pressing force
during the high-pressure polishing.
[0145] Further, the increase in the thickness of the contact
portion 411 increases a damping effect, making it possible to
prevent abnormal noise or vibration of the polishing head or the
polishing apparatus. Therefore, the use of the elastic membrane 403
having a thick contact portion 411 in the high-pressure polishing
can increase the polishing rate, thereby increasing the throughput.
On the other hand, the elastic membrane 403 having a thin contact
portion 411, because of enhanced sealing capability between it and
a wafer, can prevent the leakage of the pressurized fluid through
the holes formed in the contact portion 411 of the elastic membrane
403. With regard to the elastic membrane 403 having a thin contact
portion 411, the thickness of the contact portion 411 is, for
example, not less than 0.5 mm and not more than 1 mm. With regard
to the elastic membrane 403 having a thick contact portion 411, the
thickness of the contact portion 411 is, for example, more than 1
mm and not more than 4 mm. It is possible to partly vary the
thickness of the contact portion 411. For example, a portion of the
pressure chamber communicating with the holes may be made thin, and
the other portion may be made thick.
[0146] Specific examples of elastic membranes 403 whose pressing
surfaces to press a wafer (wafer pressing surfaces or substrate
pressing surfaces) have different areas will now be described.
FIGS. 19, 20 and 21 show exemplary elastic membranes 403 whose
pressing surfaces have different areas. The elastic membranes 403
shown in FIGS. 19 and 20 have different diameters. The elastic
membrane 403 shown in FIG. 21 has the same diameter as the elastic
membrane 403 shown in FIG. 19. However, with a stepped portion
formed in the edge of the contact portion 411, the elastic membrane
403 of FIG. 21 has a smaller pressing surface than the elastic
membrane 403 shown in FIG. 19. Generally, use of the elastic
membrane 403 having a smaller diameter generates a lower pressure
on a peripheral portion of a wafer, resulting in a lower polishing
rate of the peripheral portion of the wafer. Conversely, use of the
elastic membrane 403 having a larger diameter results in a higher
polishing rate of the peripheral portion of the wafer.
[0147] When the elastic membrane 403 having a small diameter is
used, a large gap is formed between the retainer ring 405 and the
elastic membrane 403 as shown in FIG. 20. The elastic membrane 403,
holding a wafer, may therefore laterally move a long distance, and
as a result the pressure on the wafer may become unstable. To avoid
this, as shown in FIG. 21, it may be effective to use the elastic
membrane 403 having a smaller pressing surface with the same
diameter as that of the elastic membrane 403 shown in FIG. 19.
[0148] Specific examples of elastic membranes 403 whose contact
portions 411 have different edge shapes will now be described.
FIGS. 22, 23 and 24 show exemplary elastic membranes 403 whose
contact portions 411 have different edge shapes. More specifically,
the edge of the contact portion 411 shown in FIG. 22 has
approximately a right-angled shape, the edge of the contact portion
411 shown in FIG. 23 has an oval shape, and the edge of the contact
portion 411 shown in FIG. 24 has a slope. The elastic membrane 403
shown in FIG. 22 can apply a pressing force to an outermost edge of
a wafer W, and can therefore increase the polishing rate of the
peripheral portion of the wafer. The elastic membranes 403 shown in
FIGS. 23 and 24 do not make contact with the outermost edge of the
wafer W, and therefore cannot apply a pressing force to the
outermost edge of the wafer W. Accordingly, the use of the elastic
membrane 403 of FIG. 23 or 24 can lower the polishing rate of the
peripheral portion of the wafer W, as compared to the use of the
elastic membrane 403 of FIG. 22.
[0149] Specific examples of retainer rings 405 having different
structures will now be described. As shown in FIG. 25, a plurality
of grooves, which allow the polishing liquid to move from the
outside to the inside of the retainer ring 45 and from the inside
to the outside of the retainer ring 45, are formed in the bottom of
the retainer ring 405. Each groove 407 extends from an inner
circumferential surface to an outer circumferential surface of the
retainer ring 405. The grooves 407 are arranged at regular
intervals over an entire circumference of the retainer ring
405.
[0150] In the example shown in FIG. 25, the grooves 407 extend in
the radial direction of the retainer ring 405. The number of
grooves 407 shown in FIG. 26 is the same as the number of grooves
407 shown in FIG. 25, while the grooves 407 shown in FIG. 26 are
wider than the grooves 407 shown in FIG. 25. The grooves 407 shown
in FIG. 27 have the same width as the grooves 407 shown in FIG. 25,
while the number of grooves 407 shown in FIG. 27 is larger than the
number of grooves 407 shown in FIG. 25. Though not shown
diagrammatically, both the number and the width of grooves 407 may
be varied. Further, as shown in FIGS. 28 and 29, the grooves 407
may be inclined with respect to the radial direction of the
retainer ring 405. Differences in the structure of the retainer
ring 405 include a difference in the number of grooves 407, a
difference in the shape of each groove 407, and the presence or
absence of grooves 407.
[0151] FIG. 30 is a cross-sectional view of a polishing head having
a retainer ring 405 with a large radial width. The wide retainer
ring 405 as shown in FIG. 30 may be used. FIG. 31 is a
cross-sectional view of a polishing head having double retainer
rings. Retainer rings 405 shown in FIG. 31 include an inner
retainer ring 405A and an outer retainer ring 405B. The inner
retainer ring 405A is coupled to an annular elastic membrane 406
which forms pressure chamber D5 therein, and the outer retainer
ring 405B is coupled to an annular elastic membrane 408 which forms
pressure chamber D6 therein. The outer retainer ring 405B is
arranged outside the inner retainer ring 405A so as to surround the
inner retainer ring 405A. The pressure chamber D5 is coupled to
fluid line G5, and the pressure chamber D6 is coupled to fluid line
G6. The inner retainer ring 405A or the outer retainer ring 405B
may be pressed by any other method.
[0152] The use of the retainer ring 405 as shown in FIGS. 25
through 31 changes the rebound state of the polishing pad 10,
thereby changing the profile of the peripheral portion of the wafer
and also changing the flow of polishing liquid toward the wafer
surface and the flow of polishing liquid away from the wafer
surface. Thus, the results of polishing may vary depending on the
structure of the retainer ring 405. Based on a required process
performance, different retainer rings 405 may be used in the
first-stage polishing and the second-stage polishing.
[0153] The polishing pad 10 is usually composed of nonwoven fabric,
foamed polyurethane, a porous resin, a non-porous resin, or the
like. A fixed-abrasive pad holding abrasive particles may be used.
A polishing pad composed of nonwoven fabric or suede, which has a
lower hardness than foamed polyurethane, may have a short life due
to contact with the edge portion of the retainer ring 405. In such
a case, it is preferred to use the retainer ring 405 having the
small number of grooves 407, the retainer ring 405 having no groove
407, or the retainer ring 405 having narrow grooves 407. Such
retainer rings 405 can reduce friction between the polishing pad
and the edge portion of the retainer rings 405, and therefore can
increase the life of the polishing pad.
[0154] It is also possible to use a retainer ring 405 whose outer
edge portion 405a, which is to be brought into contact with the
polishing pad 10, has a tapered or oval shape as shown in FIGS. 32
and 33. Such retainer ring 405 can also reduce friction between the
polishing pad 10 and the outer edge portion 405a of the retainer
ring 405, thereby increasing the life of the polishing pad 10.
[0155] It is possible to use a polishing pad made of a relatively
hard material, such as foamed polyurethane, in first-stage rough
polishing and to use, in second-stage final polishing, a polishing
pad which is softer than the polishing pad used in the first-stage
polishing. In this case, the life of the polishing pad for the
final polishing can be increased by using, in the second-stage
final polishing, a retainer ring 405 having a different structure
from a retainer ring 405 used in the first-stage polishing.
Examples of the retainer ring 405 for use in the second-stage final
polishing include a retainer ring having the small number of
grooves 407, a retainer ring having no groove 407, a retainer ring
having narrow grooves 407, a retainer ring whose outer edge
portion, which is to make contact with the polishing pad, has a
tapered shape, and a retainer ring whose outer edge portion has an
oval shape.
[0156] Specific examples of retainer rings 405 composed of
different materials will now be described. The retainer ring 405 is
usually rubbed against the polishing pad 10 in the presence of the
polishing liquid, and therefore the bottom surface of the retainer
ring 405 wears gradually. Fine particles, generated from the
retainer ring 405, can be attached as foreign matter to a wafer
during polishing of the wafer or cause damage, such as scratching,
to the surface of the wafer. Therefore, when using a polishing
liquid containing abrasive particles, it is preferred to use a
retainer ring 405 made of a material having high wear resistance.
When using a polishing liquid containing no abrasive particles or
containing abrasive particles at a low concentration, it is
preferred to use a retainer ring 405 made of a soft material in
order to prevent scratching of a wafer. In order to meet various
requirements for multistage polishing, the use of retainer rings
405 of different materials in the first-stage polishing and the
second-stage polishing is sometimes effective. Examples of
materials usable for retainer rings 405 include ceramics such as
SiC, resins such as PPS, PEEK, PTFE, PP, polycarbonate and
polyurethane, and the resins containing a filler to enhance the
wear resistance.
[0157] The polishing apparatus may include a common polishing table
provided with different types of polishing heads. According to this
type of polishing apparatus, the first-stage polishing and the
second-stage polishing of a substrate can be performed using
polishing heads having different constructions on the same
polishing surface.
[0158] The previous description of embodiments is provided to
enable a person skilled in the art to make and use the present
invention. Moreover, various modifications to these embodiments
will be readily apparent to those skilled in the art, and the
generic principles and specific examples defined herein may be
applied to other embodiments. Therefore, the present invention is
not intended to be limited to the embodiments described herein but
is to be accorded the widest scope as defined by limitation of the
claims.
* * * * *