U.S. patent application number 14/987843 was filed with the patent office on 2016-04-28 for method of forming diamond conditioners for cmp process.
This patent application is currently assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.. The applicant listed for this patent is TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.. Invention is credited to Yen-Chang CHAO, Kei-Wei CHEN, Ying-Lang WANG.
Application Number | 20160114460 14/987843 |
Document ID | / |
Family ID | 49477716 |
Filed Date | 2016-04-28 |
United States Patent
Application |
20160114460 |
Kind Code |
A1 |
CHAO; Yen-Chang ; et
al. |
April 28, 2016 |
METHOD OF FORMING DIAMOND CONDITIONERS FOR CMP PROCESS
Abstract
A method for making a conditioner disk used in a chemical
mechanical polishing (CMP) process comprises applying a first layer
of at least one binder over a substrate; disposing a plurality of
diamond particles on the first layer of the at least one first
binder at the plurality of locations; and fixing the plurality of
diamond particles to the substrate by heating the substrate to a
raised temperature and then cooling the substrate. The plurality of
diamond particles disposed over the substrate are configured to
provide a working diamond ratio higher than 50% when the
conditioner disk is used in a CMP process.
Inventors: |
CHAO; Yen-Chang; (Taichung
City, TW) ; CHEN; Kei-Wei; (Tainan City, TW) ;
WANG; Ying-Lang; (Lung-Jing Country, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
Hsin-Chu |
|
TW |
|
|
Assignee: |
TAIWAN SEMICONDUCTOR MANUFACTURING
CO., LTD.
Hsin-Chu
TW
|
Family ID: |
49477716 |
Appl. No.: |
14/987843 |
Filed: |
January 5, 2016 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13455448 |
Apr 25, 2012 |
9254548 |
|
|
14987843 |
|
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Current U.S.
Class: |
451/443 |
Current CPC
Class: |
B24B 53/12 20130101;
B24D 18/00 20130101; B24B 53/017 20130101; B24D 3/06 20130101; B24D
3/28 20130101 |
International
Class: |
B24B 53/12 20060101
B24B053/12 |
Claims
1. A conditioner disk used in a chemical mechanical process (CMP),
comprising: a substrate; a first binder layer comprising at least
one first binder disposed over the substrate; a plurality of
diamond particles disposed on the first binder layer at a plurality
of locations; and a second layer of at least one second binder over
the substrate, wherein at least one top portion of each of the
plurality of diamond particles protrudes out of the second layer of
at least one second binder and is exposed, and the plurality of
diamond particles disposed over the substrate are configured to
provide a working diamond ratio higher than 50% when the
conditioner disk contacts a flat surface.
2. The conditioner disk of claim 1, wherein the at least one first
binder is a metal or metal alloy.
3. The conditioner disk of claim 1, wherein the at least one first
binder comprises a metal selected from the group consisting of
nickel, titanium, iron and chromium.
4. The conditioner disk of claim 1, wherein the at least one first
binder is a material comprising a thermosetting polymer.
5. The conditioner disk of claim 1, wherein a material of the at
least one second binder layer is the same as the at least one first
binder.
6. The conditioner disk of claim 1, wherein the plurality of
diamond particles are of substantially the same particle size.
7. The conditioner disk of claim 1, wherein the plurality of
diamond particles are oriented in substantially the same direction
as each other.
8. The conditioner disk of claim 1, wherein the first binder layer
is disposed over the substrate in a regular pattern.
9. The conditioner disk of claim 1, wherein the plurality of
diamond particles are uniformly disposed onto portions of the first
binder layer.
10. The conditioner disk of claim 1, wherein the plurality of
diamond particles have a particle size in the range of from 0.5
micron to 500 microns.
11. The conditioner disk of claim 1, wherein the working diamond
ratio is higher than 75%.
12. The conditioner disk of claim 1, wherein the working diamond
ratio is higher than 90%.
13. The conditioner disk of claim 1, wherein the plurality of
diamond particles are selected from the group consisting of diamond
having centered cubic crystal structure, polycrystalline diamond
(PCD), diamond-like carbon (DLC), and combinations thereof.
14. A conditioner disk used in a chemical mechanical process (CMP),
comprising: a substrate; a first binder layer comprising at least
one first binder disposed over the substrate, wherein the first
layer of at least one binder does not completely cover the
substrate; a plurality of diamond particles disposed on the first
binder layer at a plurality of locations; and a second layer of at
least one second binder over the substrate, wherein at least one
top portion of each of the plurality of diamond particles protrudes
out of the second layer of at least one second binder and is
exposed, and the plurality of diamond particles disposed over the
substrate are configured to provide a working diamond ratio higher
than 50% when the conditioner disk contacts a flat surface.
15. The conditioner disk of claim 14, wherein the plurality of
diamond particles are selected from the group consisting of diamond
having centered cubic crystal structure, polycrystalline diamond
(PCD), diamond-like carbon (DLC), and combinations thereof.
16. The conditioner disk of claim 14, wherein the at least one
first binder comprises a metal or a thermosetting polymer.
17. A conditioner disk used in a chemical mechanical process (CMP),
comprising: a substrate; a first binder layer comprising at least
one first binder disposed over the substrate, wherein the first
layer of at least one binder completely covers the substrate; a
plurality of diamond particles disposed on the first binder layer
at a plurality of locations; and a second layer of at least one
second binder over the substrate, wherein at least one top portion
of each of the plurality of diamond particles protrudes out of the
second layer of at least one second binder and is exposed, and the
plurality of diamond particles disposed over the substrate are
configured to provide a working diamond ratio higher than 50% when
the conditioner disk contacts a flat surface.
18. The conditioner disk of claim 17, wherein the plurality of
diamond particles are selected from the group consisting of diamond
having centered cubic crystal structure, polycrystalline diamond
(PCD), diamond-like carbon (DLC), and combinations thereof.
19. The conditioner disk of claim 17, wherein the at least one
first binder comprises a metal or a thermosetting polymer.
20. The conditioner disk of claim 17, wherein the plurality of
diamond particles are of substantially the same particle size, and
are oriented in substantially the same direction as each other.
Description
PRIORITY CLAIM AND CROSS-REFERENCE
[0001] This application is a divisional application of U.S. patent
application Ser. No. 13/455,448, filed Apr. 25, 2012, which
application is expressly incorporated by reference herein in its
entirety.
FIELD
[0002] The disclosure relates to conditioner disks used in chemical
mechanical polishing (CMP), and the methods of manufacturing the
same.
BACKGROUND
[0003] Chemical mechanical polishing/planarization (CMP) is a key
process of smoothing surface of semiconductor wafers through both
chemical etching and physical abrasion. A semiconductor wafer is
mounted onto a polishing head, which rotates during a CMP process.
The rotating polishing head presses the semiconductor wafer against
a rotating polishing pad. Slurry containing chemical etchants and
colloid particles is applied onto the polishing pad. Irregularities
on the surface are removed to result in planarization of the
semiconductor wafer.
[0004] In a CMP process, conditioner disks are used to prepare and
maintain the surface of polishing pad. A conditioner disk removes
the debris on the polishing pad surface and revives the polish pad
surface to ensure a stable CMP process. A conditioner disk
generally comprises abrasive particles fixed on a substrate.
Non-uniformity of the surface of the conditioner disk can result in
non-uniformity in smoothness of the resulting wafer. In addition,
some abrasive particles might be dislodged and pulled out from the
surface. Such dislodgement and pull-out cause further deterioration
of the wafer surface uniformity.
[0005] Meanwhile, the size of semiconductor wafers has increased to
improve throughput and reduce cost per die. For example, in the
transition from 300 mm to 450 mm wafer size, the wafer area
increases by 125%. The uniformity in smoothness of the whole wafer
becomes more difficult to maintain in the more-than-doubled-sized
wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] The present disclosure is best understood from the following
detailed description when read in conjunction with the accompanying
drawings. It is emphasized that, according to common practice, the
various features of the drawings are not necessarily to scale. On
the contrary, the dimensions of the various features are
arbitrarily expanded or reduced for clarity. Like numerals denote
like features throughout specification and drawing.
[0007] FIG. 1 is a flow chart diagram illustrating an exemplary
method for making a conditioner disk used in a chemical mechanical
polishing (CMP) process, in accordance with some embodiments.
[0008] FIG. 2 is a cross section view of an exemplary substrate, in
accordance with some embodiments.
[0009] FIG. 3 illustrates a first layer of at least one first
binder disposed over the exemplary substrate of FIG. 2, in
accordance with some embodiments.
[0010] FIG. 4 is a cross section view of an exemplary resulting
restructure after a plurality of diamond particles are disposed at
a plurality of locations on the first layer of binder of FIG. 3, in
accordance with some embodiments.
[0011] FIG. 5 illustrates an exemplary resulting structure after a
second layer of at least one second binder is disposed over the
resulting structure of FIG. 4, in accordance with some
embodiments.
DETAILED DESCRIPTION
[0012] This description of the exemplary embodiments is intended to
be read in connection with the accompanying drawings, which are to
be considered part of the entire written description. In the
description, relative terms such as "lower," "upper," "horizontal,"
"vertical,", "above," "below," "up," "down," "top" and "bottom" as
well as derivative thereof (e.g., "horizontally," "downwardly,"
"upwardly," etc.) should be construed to refer to the orientation
as then described or as shown in the drawing under discussion.
These relative terms are for convenience of description and do not
require that the apparatus be constructed or operated in a
particular orientation. Terms concerning attachments, coupling and
the like, such as "connected" and "interconnected," refer to a
relationship wherein structures are secured or attached to one
another either directly or indirectly through intervening
structures, as well as both movable or rigid attachments or
relationships, unless expressly described otherwise.
[0013] In the conventional conditioner pads or disks used in a CMP
process, the abrasive particles are generally fixed onto a
substrate using an electroplated metal or a brazing alloy.
Dislodgement and pull-out of the abrasive particles occur due to
insufficient interfacial bonding between the abrasive particles and
the substrate. More particularly, not all the abrasive particles on
the conditioner disk surface are available as the working abrasive
particles for contacting the surface of the polishing disk. A
conditioner disk having strong bonding and high ratio of the
working abrasive particles are desired.
[0014] This disclosure provides a method for making a conditioner
disk comprising diamond particles and the resulting conditioner
disk, which is configured to provide a high working diamond ratio
with good interfacial bonding during its use in a CMP process.
[0015] In some embodiments, the method comprises applying a first
layer of at least one binder over a substrate; disposing a
plurality of diamond particles on the first layer of the at least
one first binder at a plurality of locations; and fixing the
plurality of diamond particles to the substrate by heating the
substrate to a raised temperature and then cooling the substrate.
In some embodiments, the method further comprises disposing a
second layer of at least one second binder over the substrate after
disposing and fixing the plurality of the particles on the
substrate.
[0016] This disclosure also provides a conditioner disk used in a
chemical mechanical polishing (CMP) process. The conditioner disk
comprises a substrate; a first binder layer comprising at least one
binder disposed over the substrate; and a plurality of diamond
particles disposed on the first binder layer at a plurality of
locations. In such a conditioner disk, the plurality of diamond
particles are uniformly distributed over the substrate, and the
conditioner disk is configured to provide a working diamond ratio
higher than 50%. In some embodiments, the working diamond ratio is
higher than 75%. In some embodiments, the working diamond ration is
higher than 90%.
[0017] For brevity, references to "diamond" in this disclosure will
be understood to encompass any form of carbon selected from:
conventional diamond as an allotrope of carbon, where the carbon
atoms are arranged in a tetrahedron configuration as a variation of
the face-centered cubic crystal structure; polycrystalline diamond
(PCD), diamond-like carbon (DLC) having amorphous structure; and
any combination or any variation of traditional diamond,
polycrystalline diamond and DLC. References to "diamond particles"
will be understood to encompass any diamond or DLC in any shape of
a regular or irregular form, or combination thereof.
[0018] References to "working diamond" in this disclosure will be
understood to encompass the diamond particles fixed to the
substrate and capable of contacting a working surface such as a
polishing pad. Reference to the "working diamond ratio" in this
disclosure will be understood as the ratio of the working diamond
particles among all the diamond particles disposed over a
substrate. In some embodiments, the working diamond ratio can be
measured by determining the number of all the diamond particles
disposed over the substrate, and determining the number of the
available working diamond particles when the conditioner disk is
pressed against a working surface or a flat surface as the control.
The number of the available working diamond particles divided by
the number of all the diamond particles is the working diamond
ratio.
[0019] FIG. 1 is a flow chart diagram 100 illustrating an exemplary
method for making a conditioner disk 500 used in a chemical
mechanical polishing (CMP) process, in accordance with some
embodiments. FIGS. 2-5 illustrate the structure in each step of
such a method.
[0020] FIG. 2 is a cross section view of an exemplary substrate 200
for a conditioner disk, in accordance with some embodiments.
Examples of substrate 200 include but are not limited to metals,
metal alloys, ceramics and organic materials such as engineering
plastics. Examples of suitable materials include but are not
limited to stainless steel, copper alloy, alumina, and polyether
ether ketone (PEEK). In some embodiments, the substrates are
optionally treated with at least one adhesion promoter. Examples of
adhesion promoters include but are not limited to silane coupling
agents having different functional group.
[0021] In step 100 of FIG. 1, a first layer of at least one first
binder 202 is coated over substrate 200. FIG. 3 illustrates the
structure after a first layer of at least one first binder 202 is
disposed over the exemplary substrate 200, in accordance with some
embodiments.
[0022] Examples of the first layer of at least one first binder 202
include but are not limited to metals, metal alloys, and
thermosetting polymers. In some embodiments, the first binder layer
202 is a metal or metal alloy comprising iron, nickel, titanium and
chromium. In some other embodiments, the first binder layer 202 is
a material comprising a thermosetting polymer including but are not
limited to a crosslinkable/curable epoxy in a liquid or paste form.
In some embodiments, a combination of a metal and a thermosetting
polymer such as curable epoxy is used. In some embodiments, it is a
solder flux in a liquid or paste form that can be printed and
coated onto substrate 200.
[0023] Examples of suitable coating process include but are not
limited to casting, spin coating, dip coating, print coating,
screen printing, spray coating, powder coating, electroplating and
physical or chemical vapor deposition.
[0024] In some embodiments, the first layer of the least one first
binder 202 does not completely cover substrate 200. For example, in
some embodiments the first binder layer 202 is disposed onto
substrate 200 in a regular pattern at a plurality of locations. The
patterned layer of the first binder 202 can be formed through
masking the substrate followed by coating a binder, or through
screen printing or direct printing a binder over the substrate. In
some embodiments, the first binder layer 202 of a certain pattern
is formed through a process of lithography such as
photolithography.
[0025] The patterned first binder layer 202 shown in FIG. 3 is for
illustration purpose only. The first layer of the at least one
first binder 202 is a flat portion having a top surface parallel to
the substrate surface as shown in FIG. 3 in accordance with some
embodiments. The surface of the first binder layer 202 is not
necessarily flat. In some embodiments, the first layer of the at
least one first binder 202 has a curved top surface. A portion of
the patterned first binder layer 202 can be in a shape of a dot,
polygon, irregular pattern or the like.
[0026] Step 104 of FIG. 1 is an optional step. In some embodiments
in which the first binder layer 202 completely cover the surface of
the substrate 200, in step 104, some portions of the substrate 200
comprising the first layer of the at least one binder 202 may be
masked so that portions of the first layer of the at least one
binder 202 is exposed at a plurality of locations. The exposed
portions of the first binder layer 202 are the locations where a
plurality of diamond particles are disposed.
[0027] In step 106 of FIG. 1, a plurality of diamond particles 204
are disposed onto the first layer of binder 202 at the plurality of
locations. In some embodiments, a plurality of diamond particles
are disposed separately on the first layer of the at least one
first binder 202 at a plurality of locations.
[0028] FIG. 4 is a cross section view of an exemplary resulting
restructure after a plurality of diamond particles 204 disposed on
the first layer of binder 202 of FIG. 3 at the plurality of
locations, in accordance with some embodiments.
[0029] Examples of the diamond particles 204 include but are not
limited to conventional crystalline diamond, polycrystalline
diamond (PCD), diamond-like carbon (DLC) having amorphous
structure; and any combination or any variation of crystalline
diamond, polycrystalline diamond and DLC. In some embodiments, the
diamond particles are synthetic. The diamond particles or powders
can be synthesized using a process such as high-pressure
high-temperature synthesis, a chemical vapor deposition and
ultrasound cavitation. Examples of the suppliers of diamond
particles include but are not limited to Tomei Diamond of Japan;
General Electrical Super-abrasives of U.S.; Beta Diamond Products,
Inc. of U.S.
[0030] In some embodiments, the diamond particles 204 are of
various shapes and sizes. In some embodiments, the diamond
particles are of substantially the same particle size and/or
substantially the same shape. In some embodiments, the diamond
particles are oriented in substantially the same direction as each
other.
[0031] In some embodiments, the diamond particles have identical
shape and particle size. In some embodiments, the particle size is
in the range of from 0.5 to 500 microns. In some embodiments, the
particle size of the diamond particles 204 are in the range of
50-300 microns. In some embodiments, all the diamond particles of
the same shape and size are oriented in the same direction.
[0032] A plurality of diamond particles 204 can be disposed
separately onto the first layer of binder 202 at the plurality of
locations using any suitable technique. For example, in some
embodiments, each diamond particle 204 is picked and then placed
onto a respective patterned portion of the first layer of binder
202 by a dispense robot. An example of such a dispense robot is
available from Everprecision Tech Co., Ltd. of Taiwan, under the
trade name of SR-LF Series Vision Dispense Robot.
[0033] In step 108, the plurality of diamond particles 204 are
fixed onto substrate 200 through the first layer of binder 202. One
exemplary process is to heat substrate 200 comprising the diamond
particles 204 and the first layer of binder 202 to a raised
temperature, followed by a cooling step. At such a raised
temperature, the first layer of the at least one first binder 202
melts in some embodiments. In some other embodiments, the first
layer of the at least one first binder 202 comprising a
thermosetting polymer cures to chemically form a crosslinked
structure.
[0034] The heating temperature is lower than the melting point of
the substrate 200. For example, in some embodiments it is less than
1500.degree. C. when substrate 200 is stainless steel. In some
other embodiments, it may be less than 800.degree. C. when
substrate 200 is a type of copper alloy. Suitable temperature range
depends on material type of the first layer of binder 202 used. For
example, the heating temperature is about 170.degree. C. when a
lead alloy is used in some embodiments. The heating temperature can
be as high as 370.degree. C. when a tin alloy is used in some other
embodiments. The suitable temperature range is 50-150.degree. C.
when the first binder layer 202 is epoxy in some other
embodiments.
[0035] During the heating and cooling process in step 108, in some
embodiments, an additional step is optionally included to adjust
the distribution of the plurality of the diamond particles to
ensure that they are at substantially the same height and the same
orientation. As shown in FIG. 4, the dimension (a) from the top of
a diamond particle to the bottom surface of the substrate is
substantially the same for the plurality of the diamond particles
in some embodiments. The dimension of the diamond particles (b) is
also substantially the same for the plurality of the diamond
particles. A mold is optionally included to fix the plurality of
diamond particles before the cooling procedure is finished.
[0036] In step 110 of FIG. 1, a second layer of at least one second
binder 206 is disposed over the resulting structure of FIG. 4. FIG.
5 illustrates an exemplary resulting structure 500 after step 110,
in accordance with some embodiments.
[0037] Examples of the second layer of at least one second binder
206 include but are not limited to metals, metal alloys, and
thermosetting polymers. In some embodiments, it is a metal or metal
alloy comprising iron, nickel, titanium and chromium. In some other
embodiments, the second layer of the at least second binder 206
comprises a thermosetting polymer including but are not limited to
a crosslinkable/curable epoxy in a liquid or paste form. In some
embodiments, a combination of a metal and a thermosetting polymer
such as curable epoxy is used. If the second layer of the as least
one second binder comprises a thermosetting polymer, a curing step
through a mechanism such as thermal or radiation curing can be
used.
[0038] Examples of suitable coating processes include but are not
limited to casting, spin coating, dip coating, print coating,
screen printing, spray coating, powder coating, electroplating and
physical or chemical vapor deposition.
[0039] In some embodiments, the second layer of at least one second
binder 206 has a chemical composition different from the first
layer of the at least one first binder 202. In some embodiments,
the second layer of at least one second binder 206 is chemically
the same as the first layer of the at least one first binder
202.
[0040] In some embodiments, step 110 is performed before step 108
so that the second binder layer is heated or cured concurrently,
while the first binder layer is heated. Therefore, only one step of
curing is used. For example, if the two binder layers 202 and 206
are both heat-curable, only one step of heating followed by cooling
is used in some embodiments. In some embodiments, during such a
heating and cooling process, it is optional to include adjusting
the distribution of the plurality of the diamond particles to
ensure that they are at the same height and the same orientation. A
mold is optionally included to fix the plurality of diamond
particles before the cooling procedure is finished.
[0041] Step 112 of FIG. 1 is an optional step of cleaning the
conditioner disk 500 after fixing the plurality of the diamond
particles over the substrate. For example, the conditioner disk 500
is cleaned using solvents in some embodiments.
[0042] In FIG. 5, the exemplary conditioner disk 500 resulting from
process 100 comprises substrate 200; the first layer comprising at
least one first binder 202 that is coated over substrate 200; and a
plurality of diamond particles 204 disposed on the first binder
layer 202 at a plurality of locations. In conditioner disk 500 in
accordance with some embodiments, the plurality of diamond
particles 204 is uniformly distributed over the substrate 200.
Conditioner disk 500 is configured to provide a working diamond
ratio higher than 50%. In some embodiments, the working diamond
ratio is higher than 75%. In some embodiments, the working diamond
ration is higher than 90%.
[0043] In some embodiments, the plurality of diamond particles 204
at the plurality of locations shares substantially the same
particle size and shape. In some embodiments, the diamond particles
204 are oriented at the same direction.
[0044] In some embodiments, the first binder layer 202 does not
fully cover substrate 200. In some embodiments, the second layer of
the at least one second binder 206 is disposed over substrate 200
to fully cover the top surface except the top portions of the
plurality of the diamond particles 204. In some embodiments, at
least 50% of the height of each diamond particle protrudes from the
surface of conditioner disk 500. The ratio of dimension (c) to the
dimension (b) as shown in FIG. 5, is higher than 50%. In some
embodiments, at least 25% of the height of each diamond particle
protrudes from the surface of conditioner disk 500. The ratio of
dimension (c) to the dimension (b) is higher than 25%.
[0045] Conditioner disk 500 also provides strong adhesion between
the plurality of the diamond particles 204 and substrate 200
through the two binder layers 202 and 206. It is suitable for
conditioning the polishing pad in a CMP process.
[0046] This disclosure provides a method for making a conditioner
disk used in a chemical mechanical polishing (CMP) process and the
resulting conditioner disk.
[0047] In some embodiments, the method comprises applying a first
layer of at least one binder over a substrate; disposing a
plurality of diamond particles on the first layer of the at least
one first binder at a plurality of locations; and fixing the
plurality of diamond particles to the substrate by heating the
substrate to a raised temperature and then cooling the substrate.
In such a process, the plurality of diamond particles are uniformly
disposed over the substrate, and are configured to provide a
working diamond ratio higher than 50% when the conditioner disk is
used in a CMP process. In some embodiments, the plurality of the
diamond particles is of substantially the same particle size. In
some embodiments, the method further comprises masking the
substrate after applying the first layer of the at least one first
binder at a plurality of locations onto the substrate so that a
plurality of portions of the first binder layer are exposed for
disposing a plurality of diamond particles. In some embodiments, a
plurality of diamond particles are disposed separately onto the
first layer of the at least one first binder at a plurality of
locations. Each diamond particle is individually placed onto one
portion of the first binder layer.
[0048] In some embodiments, the method further comprises disposing
a second layer of at least one second binder over the substrate
after disposing and fixing the plurality of the particles on the
substrate. In some embodiments, the second layer of at least one
second binder is the same as the at least one first binder. In some
embodiments, the second layer of at least one second binder is
different from the at least one first binder. The at least one
first binder or the at least second binder is a metal, a metal
alloy or a thermosetting polymer resin. In some embodiments, the
second layer of the at least one second binder is disposed over the
substrate to fully cover the top surface except the top portions of
the plurality of the diamond particles.
[0049] This disclosure also provides a method for making a
conditioner disk used in a chemical mechanical polishing (CMP)
process. The method comprises coating a first layer of at least one
binder over a substrate at a plurality of locations, the first
layer of at least one binder does not completely cover the
substrate. The method further comprises disposing a plurality of
diamond particles separately on the first layer of the at least one
first binder at the plurality of locations; and fixing the
plurality of diamond particles to the substrate by heating the
substrate to a raised temperature and then cooling the substrate.
In such a process, the plurality of diamond particles are uniformly
disposed over the substrate, and are configured to provide a
working diamond ratio higher than 50% when the conditioner disk is
used in a CMP process.
[0050] In some embodiments, a conditioner disk used in a chemical
mechanical process (CMP) comprises a substrate; a first binder
layer comprising at least one binder disposed over the substrate;
and a plurality of diamond particles disposed on the first binder
layer at a plurality of locations. In such a conditioner disk, the
plurality of diamond particles are uniformly distributed over the
substrate, and the conditioner disk is configured to provide a
working diamond ratio higher than 50%. In some embodiments, the
diamond particles are of substantially the same particle size. In
some embodiments, the diamond particles are oriented in
substantially the same direction as each other.
[0051] Although the subject matter has been described in terms of
exemplary embodiments, it is not limited thereto. Rather, the
appended claims should be construed broadly, to include other
variants and embodiments, which may be made by those skilled in the
art.
* * * * *