U.S. patent application number 14/517192 was filed with the patent office on 2016-04-21 for substrate for mounting gas supply components and methods thereof.
This patent application is currently assigned to Lam Research Corporation. The applicant listed for this patent is Lam Research Corporation. Invention is credited to John E. Daugherty, Michael C. Kellogg, Christopher J. Pena.
Application Number | 20160111257 14/517192 |
Document ID | / |
Family ID | 55749596 |
Filed Date | 2016-04-21 |
United States Patent
Application |
20160111257 |
Kind Code |
A1 |
Kellogg; Michael C. ; et
al. |
April 21, 2016 |
SUBSTRATE FOR MOUNTING GAS SUPPLY COMPONENTS AND METHODS
THEREOF
Abstract
A gas delivery substrate for mounting gas supply components of a
gas delivery system for a semiconductor processing apparatus. The
substrate includes a plurality of layers having major surfaces
thereof bonded together forming a laminate with openings for
receiving and mounting first, second, third and fourth gas supply
components on an outer major surface. The substrate includes a
first gas channel extending into an interior major surface that at
least partially overlaps a second gas channel extending into a
different interior major surface. The substrate includes a first
gas conduit including the first gas channel connecting the first
gas supply component to the second gas supply component, and a
second gas conduit including the second channel connecting the
third gas supply component to the forth gas supply component.
Inventors: |
Kellogg; Michael C.;
(Oakland, CA) ; Pena; Christopher J.; (Hayward,
CA) ; Daugherty; John E.; (Fremont, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Lam Research Corporation |
Fremont |
CA |
US |
|
|
Assignee: |
Lam Research Corporation
|
Family ID: |
55749596 |
Appl. No.: |
14/517192 |
Filed: |
October 17, 2014 |
Current U.S.
Class: |
438/710 ;
137/334; 137/544; 137/594; 156/250; 228/111; 228/114; 228/165;
29/890.14 |
Current CPC
Class: |
B32B 7/12 20130101; F17D
3/01 20130101; B32B 2315/02 20130101; B32B 15/04 20130101; B32B
38/04 20130101; B32B 17/00 20130101; B32B 3/266 20130101; F17D 1/02
20130101; B32B 9/005 20130101; B32B 9/04 20130101; B32B 2307/714
20130101; H01J 37/32449 20130101; B32B 27/06 20130101; H01J 37/3244
20130101; B32B 3/10 20130101; B32B 2315/08 20130101; F17D 3/16
20130101 |
International
Class: |
H01J 37/32 20060101
H01J037/32; B32B 37/18 20060101 B32B037/18; B32B 38/00 20060101
B32B038/00; B32B 9/00 20060101 B32B009/00; F17D 3/01 20060101
F17D003/01; B32B 17/00 20060101 B32B017/00; H01L 21/3065 20060101
H01L021/3065; H01L 21/67 20060101 H01L021/67; F17D 1/02 20060101
F17D001/02; F17D 3/16 20060101 F17D003/16; B32B 3/10 20060101
B32B003/10; B32B 15/04 20060101 B32B015/04 |
Claims
1. A gas delivery substrate for mounting gas supply components of a
gas delivery system for a semiconductor processing apparatus, the
substrate comprising: a plurality of layers having major surfaces
thereof bonded together forming a laminate, wherein the laminate
includes openings, at least some of which are mounting holes,
configured to receive and mount at least a first gas supply
component, a second gas supply component, a third gas supply
component, and a fourth gas supply component on an outer major
surface; a first gas channel extending at least partially into an
interior major surface; a second gas channel extending at least
partially into a different interior major surface, wherein the
first gas channel is at least partially overlapping the second gas
channel; a first gas conduit including the first gas channel
configured to connect the first gas supply component to the second
gas supply component; and a second gas conduit including the second
gas channel configured to connect the third gas supply component to
the forth gas supply component.
2. The substrate of claim 1, wherein the laminate includes: a
plurality of inner layers, wherein the inner layers include
horizontal gas channels and/or vertical through holes, wherein the
horizontal gas channels and/or vertical through holes form part of
the first gas conduit or the second gas conduit; and at least two
outer layers, wherein at least one of the outer layers includes
mounting holes configured to receive fasteners to mount the gas
supply components on the laminate, and openings which form part of
the first gas conduit or the second gas conduit.
3. The substrate of claim 2, wherein at least one of the inner
layers includes a plenum in fluid communication with at least one
of the openings, a plurality of horizontal gas channels radially
extending from a common point, one or more heaters for heating gas,
a gas flow splitter, a filter forming a gas restrictor, and/or a
non-linear gas channel.
4. The substrate of claim 2, wherein at least one of the horizontal
gas channels or vertical through holes forms an angle with respect
to a plane of a layer.
5. The substrate of claim 2, wherein the inner layers include
horizontal gas channels and vertical through holes in fluid
communication with the openings of the outer layers.
6. The substrate of claim 5, wherein the inner layers include a
plenum extending through more than one inner layer that is in fluid
communication with at least some of the openings of the outer
layers.
7. The substrate of claim 5, further comprising: an inner layer,
residing between at least two other inner layers, including
vertical holes and/or horizontal gas channels, wherein at least
some of the vertical holes and/or horizontal gas channels are in
fluid communication with at least some of the openings of the outer
layers.
8. The substrate of claim 7, wherein the inner layer, residing
between the at least two other inner layers, includes a plenum in
fluid communication with at least some of the openings of the outer
layers.
9. The substrate of claim 1, wherein the layers are bonded through
firing, sintering, adhesive, welding, soldering, cold spraying and
heat treatment, ultrasonic welding, brazing, diffusion bonding,
clamps, bolts, screws, or rivets.
10. The substrate of claim 1, wherein the layers are made from the
same or different material selected from ceramic, glass, metal or a
polymer.
11. The substrate of claim 1, wherein the outer layers include a
plurality of gas inlets and one or more gas outlets.
12. The substrate of claim 1, wherein the laminate includes air
conduits extending through one or more layers configured to carry
air between a pneumatic manifold and diaphragm valves and/or wire
conduits extending through one or more layers configured route
wires to or from gas supply components.
13. A system for a gas block including the substrate of claim 1,
the system including a plurality of gas supply components mounted
on at least one outer major surface, wherein the mounted gas supply
components are selected from a group comprising: an on/off gas
valve, a mass flow controller (MFC), a vacuum coupling radiation
(VCR) fitting, a manual gas valve, a gas pressure regulator, a gas
filter, a purge gas component, a gas flow restrictor, and a
pressure transducer.
14. The system of claim 13, wherein the plurality of gas supply
components are mounted on at opposed outer major surfaces.
15. The system of claim 13, further including: a first on/off gas
valve connected to an MFC through a gas conduit within the
substrate; a second on/off gas valve connected to the MFC through a
gas conduit within the substrate, wherein the second on/off gas
valve is connected to a mixing manifold through a gas conduit
within the substrate; and a mixing manifold exit connected to one
or more of the openings on the laminate.
16. The system of claim 15, wherein: (a) some of the gas conduits
crisscross each other, and at least some of the mounted gas supply
components are arranged on one or two outer major surfaces in a
non-linear arrangement, or (b) some of the gas conduits crisscross
each other, and at least some of the mounted gas supply components
are arranged on one or two outer major surfaces in a circular
arrangement.
17. The system of claim 15, wherein gas paths between gas inlets on
the laminate to a mixing manifold in the laminate has equal
lengths.
18. A method of producing the gas delivery substrate of claim 1,
said method comprising: creating a first gas channel extending at
least partially into an interior major surface of at least one
layer of a plurality of layers having major surfaces thereof;
creating a second gas channel extending at least partially into a
different interior major surface; creating openings on an outer
major surface at least some of which are mounting holes configured
to receive and mount at least a first gas supply component, a
second gas supply component, a third gas supply component, and a
fourth gas supply component; and bonding the plurality of layers
together to form a laminate such that the first gas channel is at
least partially overlapping the second gas channel, the first gas
channel forms part of a first gas conduit configured to connect the
first gas supply component to the second gas supply component, and
the second gas channel forms part of a second gas conduit
configured to connect the third gas supply component to the fourth
gas supply component.
19. A method of delivering gas through the substrate of claim 1,
wherein a plurality of gases are supplied through the openings of
the laminate, wherein the plurality of gases include at least a
first gas and a second gas; delivering the first gas from the first
gas supply component to the second gas supply component through the
first gas channel; delivering the second gas from the third gas
supply component to the fourth gas supply component through the
second gas channel; delivering the first gas from the second gas
supply component to a mixing manifold within the substrate through
a third gas channel in the substrate; delivering the second gas
from the fourth gas supply component to the mixing manifold within
the substrate through a fourth gas channel in the substrate; mixing
the first gas and the second gas in the mixing manifold to create a
first gas mixture; delivering the first gas mixture through one or
more gas channels in the substrate and/or one or more outlets on
the substrate to a semiconductor processing chamber downstream.
20. The method of claim 19, the method further comprising:
combining the first gas mixture with a tuning gas to create a
second gas mixture; delivering the second gas mixture to a plasma
etching chamber; and plasma etching a semiconductor substrate in
the chamber.
21. The method of claim 19, wherein the first, second, third and
fourth gas supply components are selected from a group comprising:
an on/off gas valve, a mass flow controller (MFC), a vacuum
coupling radiation (VCR) fitting, a manual gas valve, a gas
pressure regulator, a gas filter, a purge gas component, a gas flow
restrictor, and a pressure transducer.
22. The method of claim 19, wherein the gases are selected from the
group comprising: a deposition gas, an etch gas, a tuning gas and a
purge gas.
23. The method of claim 19, wherein the gas inlets include at least
eight gas inlets arranged along one side of the laminate, each of
the gas inlets in fluid communication with a mixing manifold in the
laminate, via a gas flow path extending through gas channels and
openings in the laminate, the method comprising opening a shutoff
valve along the gas flow path such that a process gas travels
through the gas flow path and passes through a mass flow controller
and gas pressure regulator along the gas flow path.
Description
FIELD OF THE INVENTION
[0001] The invention relates to gas delivery systems for
semiconductor substrate processing apparatuses. More particularly,
the invention relates to a gas delivery substrate for mounting gas
supply components of a gas delivery system for a semiconductor
processing apparatus.
BACKGROUND
[0002] Semiconductor substrate processing apparatuses are used for
processing semiconductor substrates by techniques including, but
not limited to, plasma etching, physical vapor deposition (PVD),
chemical vapor deposition (CVD), plasma enhanced chemical vapor
deposition (PECVD), atomic layer deposition (ALD), plasma enhanced
atomic layer deposition (PEALD), ion implantation, and resist
removal. Semiconductor substrate processing apparatuses include gas
delivery systems through which process gas is flowed and
subsequently delivered into a processing region of a vacuum chamber
of the apparatus by a gas distribution member such as a showerhead,
gas injector, gas ring, or the like. For example, the gas delivery
system can be configured to supply process gas to a gas injector
positioned in the chamber above a semiconductor substrate so as to
distribute process gas over a surface of the semiconductor
substrate being processed in the chamber. Current gas delivery
systems are constructed from many individual components, many of
which have conduits therein through which process gas flows.
[0003] Conventional semiconductor processing systems typically
utilize gas sticks. The term "gas sticks" refers, for example, to a
series of gas distribution and control components such as a mass
flow controller (MFC), one or more pressure transducers and/or
regulators, a heater, one or more filters or purifiers, and shutoff
valves. The components used in a given gas stick and their
particular arrangement can vary depending upon their design and
application. In a typical semiconductor processing arrangement,
over seventeen gases may be connected to the chamber via gas supply
lines, gas distribution components, and mixing manifolds. These are
attached to a base plate forming a complete system known as a "gas
panel" or "gas box" which serves as a mounting surface and does not
play a role in gas distribution.
[0004] In general, a gas stick comprises multiple integrated
surface mount components (e.g., valve, filter, etc.) that are
connected to other gas control components through channels on a
substrate assembly or base plate, upon which the gas control
components are mounted. Each component of the gas stick is
typically positioned above a manifold block in a linear
arrangement. A plurality of manifold blocks form a modular
substrate, a layer of manifold blocks that creates the flow path of
gases through the gas stick. The modular aspect of conventional gas
sticks allow for reconfiguration, much like children's LEGO.RTM.
block toys. However, each component of a gas stick typically
comprises highly machined parts, making each component relatively
expensive to manufacture and replace. Each component is typically
constructed with a mounting block, which in turn is made with
multiple machine operations, making the component expensive. In
addition, conventional gas sticks require a substantial amount of
space, long connections between components, multiple seals between
components, and comprise multiple potential failure points and
contamination points. Also, the long connections result in gas
delivery delays, which adversely affect gas pulsing times and
switching times. Thus, there is a need for an improved substrate
for mounting gas supply components for a semiconductor processing
apparatus.
SUMMARY
[0005] Disclosed herein is a gas delivery substrate for mounting
gas supply components of a gas delivery system for a semiconductor
processing apparatus. The substrate includes a plurality of layers
having major surfaces thereof bonded together forming a laminate.
The laminate includes openings configured to receive and mount at
least a first gas supply component, a second gas supply component,
a third gas supply component, and a fourth gas supply component on
an outer major surface of at least one of the layers. The substrate
includes a first gas channel extending at least partially into an
interior major surface of one of the layers, a second gas channel
extending at least partially into a different interior major
surface of one of the layers, wherein the first gas channel is at
least partially overlapping the second gas channel. In addition,
the substrate includes a first gas conduit including the first gas
channel configured to connect the first gas supply component to the
second gas supply component, and a second gas conduit including the
second channel configured to connect the third gas supply component
to the forth gas supply component.
[0006] Also disclosed herein is a system for a gas block that
includes the gas delivery substrate. The system includes gas supply
components mounted on at least one major surface. In one
embodiment, the gas supply components can be mounted on opposed
major surfaces. In another embodiment, the system includes an
on/off gas valve connected to an MFC through a gas conduit within
the substrate, another on/off gas valve connected to a mixing
manifold through a gas conduit within the substrate, and a mixing
manifold exit connected to one or more openings on the
laminate.
[0007] Disclosed herein is a method of producing the gas delivery
substrate. The method includes creating a first gas channel
extending into an interior major surface of at least one layer of a
plurality of layers having major surfaces thereof, creating a
second gas channel extending at least partially into a different
interior major surface, and creating openings on an outer major
surface. At least some of the openings are mounting holes
configured to receive and mount at least a first gas supply
component, a second gas supply component, a third gas supply
component, and a fourth gas supply component. The method further
includes bonding the layers together to form a laminate such that
the first gas channel is at least partially overlapping the second
gas channel, the first gas channel forms part of a first gas
conduit connecting the first gas supply component to the second gas
supply component, and the second gas channel forms part of a second
gas conduit connecting the third gas supply component to the fourth
gas supply component.
[0008] Disclosed herein is a method of delivering gas through the
gas delivery substrate, wherein gases are supplied through the
openings of the laminate. The method includes delivering a first
gas from the first gas supply component to the second gas supply
component through the first gas channel, and delivering the first
gas from the second gas supply component to a mixing manifold
within the substrate through a third gas channel in the substrate.
The method further includes delivering a second gas from the third
gas supply component to the fourth gas supply component through the
second gas channel, and delivering the second gas from the fourth
gas supply component to the mixing manifold within the substrate
through a fourth gas channel in the substrate. The method includes
mixing the first gas and the second gas in the mixing manifold to
create a first gas mixture and delivering the first gas mixture
through one or more gas channels in the substrate and/or one or
more outlets on the substrate to a semiconductor processing chamber
downstream.
BRIEF DESCRIPTION OF THE DRAWING FIGURES
[0009] FIG. 1 illustrates an embodiment of a semiconductor
substrate processing apparatus in accordance with embodiments
disclosed herein.
[0010] FIG. 2 is a schematic of a gas delivery system, in
accordance with embodiments disclosed herein.
[0011] FIG. 3 illustrates an example of a gas stick.
[0012] FIG. 4 illustrates an embodiment of a single layer in a gas
delivery substrate for mounting gas supply components of a gas
delivery system for a semiconductor processing apparatus, in
accordance with embodiments disclosed herein.
[0013] FIG. 5A illustrates multiple layers in a gas delivery
substrate for mounting gas supply components before being bonded
together, in accordance with embodiments disclosed herein.
[0014] FIG. 5B illustrates multiple layers in a gas delivery
substrate for mounting gas supply components of a gas delivery
system after being bonded together, in accordance with embodiments
disclosed herein.
[0015] FIG. 6A illustrates an embodiment of a gas delivery
substrate for mounting gas supply components of a gas delivery
system for a semiconductor processing apparatus, in accordance with
embodiments disclosed herein.
[0016] FIG. 6B illustrates a detailed view of a cross section of
the gas delivery substrate shown in FIG. 6A.
[0017] FIG. 7A illustrates an embodiment of a gas delivery
substrate for mounting gas supply components of a gas delivery
system for a semiconductor processing apparatus, in accordance with
embodiments disclosed herein.
[0018] FIG. 7B illustrates a top view of the gas delivery substrate
shown in FIG. 7A.
DETAILED DESCRIPTION
[0019] Disclosed herein is a gas delivery substrate for mounting
gas supply components of a gas delivery system for a semiconductor
processing apparatus and methods for producing and using the same.
The semiconductor substrate processing apparatus can be used for
processing semiconductor substrates by techniques including, but
not limited to, plasma etching, physical vapor deposition (PVD),
chemical vapor deposition (CVD), plasma enhanced chemical vapor
deposition (PECVD), atomic layer deposition (ALD), plasma enhanced
atomic layer deposition (PEALD), ion implantation, or resist
removal. In the following description, numerous specific details
are set forth in order to provide a thorough understanding of the
present embodiments. It will be apparent, however, to one skilled
in the art that the present embodiments may be practiced without
some or all of these specific details. In other instances, well
known process operations have not been described in detail in order
not to unnecessarily obscure present embodiments disclosed herein.
Additionally, as used herein, the term "about" when used with
reference to numerical values refers to .+-.10%.
[0020] As integrated circuit devices continue to shrink in both
their physical size and their operating voltages, their associated
manufacturing yields become more susceptible to contamination.
Consequently, fabricating integrated circuit devices having smaller
physical sizes requires that the level of contamination be less
than previously considered to be acceptable. In addition, the
wafers and processing equipment used in semiconductor processing
are becoming more complex and larger in size, in order to produce
more dies per wafer. Accordingly, producing and maintaining the
equipment and manufacturing the wafers is becoming more
expensive.
[0021] Gas distribution systems of semiconductor substrate
processing apparatuses can utilize gas sticks which are a series of
gas distribution and control components such as a mass flow
controller (MFC), one or more pressure transducers and/or
regulators, one or more heaters, one or more filters or purifiers,
manifolds, gas flow adaptors, and shutoff valves. The components
used and their particular arrangement in a gas stick can vary
depending upon their design and application. For example, in a
semiconductor substrate processing arrangement, over seventeen
process gases can be supplied to the chamber via gas supply lines
and gas distribution system components. The gas distribution system
components are attached to a base plate (i.e. gas pallet) forming
the system which is also known as a "gas panel" or "gas box."
[0022] As discussed above, gas delivery system components are made
from metals such as stainless steel or other metal alloys wherein
constituent components are assembled together, requiring interfaces
and seals between the constituent components, in order to achieve a
desired conduit path for process gas. However, the constituent
components typically comprise highly machined parts, making each
component relatively expensive to manufacture, maintain and
replace. Each component is typically constructed with a mounting
block, which in turn is made with multiple machine operations,
making the component expensive. Interchangeable components require
a substantial amount of space and longer connections to connect the
components with each other. Thus, the interchangeable components
have multiple potential failure points, contamination points, and
introduce gas delivery delays.
[0023] Corrosion, erosion, and/or corrosion/erosion in
environments, such as those formed in the interior of gas delivery
systems may contain oxygen, halogens, carbonyls, reducing agents,
etching gases, depositing gases, and/or hydro-fluorocarbon process
gas, or process gases which may be used in semiconductor substrate
processing such as but not limited Cl.sub.2, HCl, BCl.sub.3,
Br.sub.2, HBr, O.sub.2, SO.sub.2, CF.sub.4, CH.sub.2F.sub.2,
NF.sub.3, CH.sub.3F, CHF.sub.3, SF.sub.6, CO, COS, SiH.sub.4
H.sub.2. In addition inert gases, such as but not limited Ar and
N.sub.2, may be supplied to said environments.
[0024] Accordingly, disclosed herein is a gas delivery substrate
for mounting gas supply components of a gas delivery system for a
semiconductor processing apparatus and methods for producing and
using the same. The substrate can be formed from laminated layers
which are bonded together to create a uniform monolithic structure
having gas tight channels that can be in fluid communication with
each other. The substrate can be configured to receive and mount
gas supply components such that the gas supply components are in
fluid communication with each other via channels within the
substrate. The layered structure of the substrate can allow
channels or connections to be created of any size, in any
direction, in three dimensional space (e.g., X-direction,
Y-direction, and Z-direction) within the substrate. In this way,
gas supply components of a gas delivery system can be housed closer
together and the connections between components can be made
shorter, which reduces the size of the gas delivery system. In
addition, gas supply components and their connections often need to
be made from high quality materials, such as expensive metal alloys
(e.g., Hastelloy.RTM.), glass or ceramics. In an embodiment, all of
the metallic surfaces which may contact process gases (i.e. become
chemically wetted) can be eliminated or reduced so as to comply
with on wafer (i.e. substrate) purity requirements. This compact
design allows for reduced material costs while also reducing the
number of possible contamination and failure points, and faster gas
delivery pulsing and switching times for a gas delivery system.
[0025] FIG. 1 illustrates an embodiment of a semiconductor
substrate processing apparatus which can include a gas delivery
system 234 including a gas delivery substrate for mounting gas
supply components, as disclosed herein. As shown in FIG. 1, an
inductively coupled plasma processing apparatus can include a
vacuum chamber 200 (i.e. plasma etch chamber). The vacuum chamber
200 includes a substrate support (lower electrode assembly) 215 for
supporting a semiconductor substrate 214 in the interior of the
vacuum chamber 200. A dielectric window 20 forms a top wall of
vacuum chamber 200. Process gases are injected to the interior of
the vacuum chamber 200 through a gas injector 22. The gas delivery
system 234 supplies process gases to the interior of the vacuum
chamber 200 through gas injector 22. Parameters (e.g., temperature,
flow rate, and chemical makeup) of the process gases supplied to
the interior of the vacuum chamber by the gas delivery system are
preferably controlled by a control system 385.
[0026] Once process gases are introduced into the interior of
vacuum chamber 200, they are energized into a plasma state by an
antenna 18 supplying energy into the interior of vacuum chamber
200. Preferably, the antenna 18 is an external planar antenna
powered by a RF power source 240 and RF impedance matching
circuitry 238 to inductively couple RF energy into vacuum chamber
200. However, in an alternate embodiment, the antenna 18 may be an
external or embedded antenna which is nonplanar. An electromagnetic
field generated by the application of RF power to the antenna
energizes the process gas in the interior of the vacuum chamber 200
to form high-density plasma (e.g., 10.sup.9-10.sup.12
ions/cm.sup.3) above substrate 214. During an etching process, the
antenna 18 (i.e. a RF coil) performs a function analogous to that
of a primary coil in a transformer, while the plasma generated in
the vacuum chamber 200 performs a function analogous to that of a
secondary coil in the transformer. Preferably, the antenna 18 is
electrically connected to the RF impedance matching circuitry 238
by an electrical connector 238b (i.e. lead) and the RF power source
240 is electrically connected to the RF impedance matching
circuitry 238 by an electrical connector 240b.
[0027] FIG. 2 is a schematic view of an exemplary gas delivery
system 500 for a semiconductor substrate processing apparatus
processing including a gas delivery substrate for mounting gas
supply components, as disclosed herein. A vacuum chamber 510 of a
semiconductor substrate processing apparatus is supplied process
gas through a gas supply line 514. The gas supply line 514 can
provide process gases, such as etching and deposition gases which
may be alternatively supplied or pulsed, to a gas distribution
member such as a showerhead or a gas injector arranged in the upper
portion of the vacuum chamber 510, and downstream of the gas
delivery system 500. Additionally, gas supply line 514 may supply
process gas to a lower portion of the vacuum chamber such as, for
example, to a gas distribution ring surrounding the semiconductor
substrate support or through gas outlets arranged in the substrate
support. Processing gas may be supplied to gas line 514 from gas
supplies 516, 518, 520, 530 with the process gases from supplies
516, 518, 520, 530 being supplied to MFCs 522, 524, 526, 532
respectively. The MFCs 522, 524, 526, 532 supply the process gases
to a mixing manifold 528 after which the mixed gas is directed to
gas flow line 514. Mixing manifold 528 may be within a substrate
for mounting gas supply components or external to the substrate.
The gas delivery system 500 includes a substrate for mounting gas
supply components, as disclosed herein.
[0028] FIG. 3 illustrates a cross section of a prior art gas stick
with a modular substrate 322 and the flow of gases through the gas
stick. The gas may flow through primary shut-off valve 314, out of
the purge valve 316 and into MFC 318 in the direction of flow path
A. The gas may then flow out of the MFC 318 into the substrate 322,
through the mixing valve 320 and into a mixing manifold (not
shown), as illustrated by flow path D.
[0029] Substrate 322 is of a modular design which comprises
multiple interchangeable parts which are connected to each other
with seals, which introduce potential failure points. Since
substrate 332 is made up of multiple parts, it allows for a
LEGO.RTM. type construction. However, this design causes the flow
path between gas supply components to become long, which increases
size, introduces multiple failure points and delays when delivering
gas.
[0030] Accordingly, disclosed herein is a gas delivery substrate
for mounting gas supply components of a gas delivery system that
can be formed from stacked layers which are bonded together to
create a uniform monolithic structure that is configured to receive
and mount gas supply components such that the gas supply components
are in fluid communication with each other via channels within the
substrate. The layered structure of the substrate can allow gas
channels or conduits to be created of any size, in any direction.
In addition, the layered substrate can include channels or conduits
for running electrical wire connections between gas supply
comments. Also, the substrate can include channels or conduits for
carrying air between gas supply components. For example, the
channels or conduits within the substrate can provide air supply
connections between a pneumatic manifold and diaphragm values
(e.g., on/off valves). For example, the diaphragm valves can
include a solenoid which is actuated by air, in order to control
the flow of gas. Thus, gas supply components can be housed closer
together on the substrate and the connections between components
can made shorter than the connections within substrate 322, as
shown in FIG. 3.
[0031] FIG. 4 illustrates an embodiment of a gas delivery substrate
for mounting gas supply components of a gas delivery system for a
semiconductor processing apparatus, as disclosed herein. FIG. 4
shows an example of a single layer which can be included in a
substrate comprising stacked layers that are bonded together. The
layers of the substrate can be made from any suitable material,
such as ceramic, metal, metal alloy, glass or composites. A layer
of the substrate can also include one or more chambers or plenums.
Alternatively, the substrate may include one or more chambers or
plenums which extend through two or more layers of the substrate
which can form part of a mixing manifold. The substrate may include
one or more heaters for heating processing gases. In addition, the
substrate can incorporate one or more flow restrictors (e.g., a
filter with one or more small openings) across one or more layers
of the substrate. In addition, a flow splitter can be created
within one or more layers of the substrate for diverting gas.
[0032] As shown in FIG. 4, a layer can include multiple vertical
through holes 410 and horizontal channels 420. Vertical through
holes 410 can be configured as gas conduits to provide fluid
communication and/or fasten to attach gas supply components to the
substrate. The vertical through holes 410 used for gas conduits can
be coated with one or more additional materials, such as metal,
glass, plastic, ceramic, metal alloys, or composites.
[0033] In addition, vertical through holes 410 can take any shape,
pattern or direction. Vertical through holes 410 can extend
partially and/or completely through a layer. Also, vertical through
holes 410 can be configured to create a gas tight connection with
vertical through holes and/or horizontal channels of another layer
when multiple layers are bonded together. Vertical through holes
410 can be set perpendicular to a plane of a layer or at any angle
which respect to the plane of the layer. Vertical through holes 410
can be tapered in size. For example, vertical through holes 410 can
be wider at one end and smaller at another end. In other words,
vertical through holes 410 can extend vertically or at an angle in
any direction within the three dimensional space of a layer (e.g.,
X-direction, Y-direction, and Z-direction).
[0034] Also shown in FIG. 4, a layer of the gas delivery substrate
can include horizontal channels 420. Horizontal channels 420 can be
linear or take any shape, pattern or direction. Horizontal channels
420 can extend partially into or completely through the layer.
Also, horizontal channels 420 can be formed at different angles
which respect to a plane of the layer. For example, the horizontal
channels 420 can have a slope that is higher at one end and lower
at another end. The slope of a channel can also be varied (e.g.,
zigzag, curving or undulating). In addition, horizontal channels
420 can be configured to create a gas tight connection with
vertical through holes 410 and/or horizontal channels 420 of
another layer when the layers are bonded together to form a gas
conduit. Alternatively, vertical through holes 410 can connect to
horizontal channels 420 within the same layer to form a gas
conduit. Horizontal channels 420 can be set parallel to a plane of
the layer or at any angle with respect to the plane of the layer.
Interior surfaces of horizontal channels 420 and vertical through
holes 410 can be coated with corrosion resistant material, such as
siloxane, see U.S. Patent Application Publication No. 2011/0259519,
the disclosure of which is hereby incorporated. Some horizontal
channels can partially or fully overlap other horizontal channels.
Also, some horizontal channels can crisscross other horizontal
channels and/or some vertical channels. In this way, connections
between gas supply components can be more efficiently routed, in
order to save space and reduce the overall footprint of the
substrate.
[0035] In addition, horizontal channels 420 can follow any path
(e.g., winding or curved) within a layer. Horizontal channels 420
can extend in any direction within the layer. For example,
horizontal channels 420 can extend radially from a common point or
curve around a common point in the axial direction. In other words,
horizontal channels 420 can extend any in direction in the three
dimensional space of a layer (e.g., X-direction, Y-direction, and
Z-direction). In addition, horizontal channels 420 can extend
partially into an interior major surface of a layer or completely
through an interior major surface of a layer within the
substrate.
[0036] Referring now to FIG. 5A and FIG. 5B, embodiments of a gas
delivery substrate for mounting gas supply components of a gas
delivery system are shown comprising multiple layers 501-505. FIG.
5A shows different layers 501-505 of a substrate before being
bonded together. For example, the gas delivery substrate can
include a first layer 501 including vertical through holes and a
second layer 502 having vertical through holes and horizontal gas
channels. In addition, the substrate can include a third layer 503,
a fourth layer 504 and a fifth layer 505. Each layer of the
substrate can have vertical through holes and/or horizontal
channels, some of which are gas conduits. The horizontal gas
channels in one layer can partially overlap or fully overlap
horizontal gas channels in other layers. Also, each layer may
include one or more chambers or plenums, which may extend partially
through a layer or completely through one or more layers. A chamber
or plenum can form part of a mixing manifold. Each layer can
comprise vertical through holes, horizontal channels, chambers
and/or plenums. The layers can be bonded together through firing,
sintering, adhesive, friction, pressure, welding, soldering, cold
spraying and heat treatment, ultrasonic welding, cooling, brazing
or diffusion bonding. By selecting a proper material for each layer
and the bonding material the substrate can improve corrosion
resistance and gas purity while also reducing cost by avoiding
expensive metal alloys (e.g., Hastelloy.RTM., or stainless steel
e.g., 316). Alternatively, the layers can be bonded together
through any mechanical means, such as clamps, bolts, screws,
rivets, or through bolts.
[0037] FIG. 5B illustrates a gas delivery substrate comprising
multiple layers bonded together to form a monolith structure 509.
While five layers are shown for the substrate in FIG. 5A and FIG.
5B, any number layers can be used to form the substrate. The layers
of the substrate can be made of the same material such that when
bonded together form a uniform monolith structure. Each layer of
the substrate can have a uniform thickness or a non-uniform
thickness. Alternatively, different materials can be used for each
layer. For example, the outer layers can be formed from a higher
quality material than the inner layers and vice versa. In addition,
the layers can have identical shapes or different shapes or
configurations. For example, two layers can be spaced apart and
reside on top of the same layer. In another example, one layer may
have a rectangular shape while another layer may have a circular
shape.
[0038] Also shown in FIG. 5A and FIG. 5B are vertical through holes
410 on the substrate for mounting gas supply components, some of
which are openings for gas passages. The vertical through holes 410
can also be used for mounting the substrate or fastening the layers
together. The layers can be bonded together to form a monolithic
structure configured to receive and mount gas supply
components.
[0039] The substrate can be formed such that it is configured to
receive and mount gas supply components on both the top layer and
bottom layer. In addition, the substrate can be formed with three
sides or more sides (e.g., a triangular shape, a rectangle,
pentagon, hexagon, etc.), such that the one or more sides of the
substrate are configured to receive and mount gas supply
components. Alternatively, the layered substrate can be formed in a
circular, oval or curvy shape (e.g., a single vertical side). Also,
the substrate can be formed with a mixture of flat angular sides
and curved sides (e.g., a "D" shape). In addition, the substrate
can be formed such that it is configured with one or more gas
inlets and one or more gas outlets. The gas inlets and outlets can
be included in any layer or across more than one layer of the
substrate. The gas outlets can be configured to connect to one or
more gas lines and/or a processing chamber downstream.
[0040] FIG. 6A and FIG. 6B illustrate two views of an embodiment of
a gas delivery substrate for mounting gas supply components of a
gas delivery system for a semiconductor processing apparatus as
disclosed herein. FIG. 6A shows a side view of a gas delivery
substrate with gas supply components 610 and 612 mounted on both
the top layer and bottom layer of the substrate. FIG. 6B
illustrates a close up view of a cross section of the substrate
shown in FIG. 6A. As shown in FIG. 6B, gas supply components 610
can be in fluid communication with each other via vertical through
holes 410 and horizontal channels 420 within different layers of
the substrate. The different layers of the substrate can be bonded
together such that the vertical through holes 410 and horizontal
channels 420 within the layers form gas tight connections or paths
through the substrate.
[0041] As shown in FIG. 6B, vertical through holes 410 and
horizontal channels 420 of different layers of the substrate can
connect to form gas tight channels between gas supply components
610. The gas supply components 610 can be mounted on any side of
the substrate. Vertical through holes 410 and horizontal channels
420 within different layers of the substrate can connect gas supply
components that are mounted on different sides of the substrate.
For example, vertical through holes 410 and horizontal channels 420
of different layers can connect to place a gas supply component
mounted on a top layer in fluid communication with a gas supply
component mounted on a bottom layer. In other words, the substrate
comprises an interleaved mesh interconnect of different conduits
and channels which can connect to various gas supply components. In
addition to housing conduits within the layers of the substrate,
one or more layers of the substrate may include a gas flow
splitter, a heater, a restrictor (e.g., a filter with one or more
small holes), and/or a gas mixing manifold. In an embodiment, the
layers of the substrate can include air conduits. For example, the
air conduits can allow a pneumatic manifold to connect to and
control diaphragm valves or air actuators mounted on the
substrate.
[0042] Referring now to FIG. 7A and FIG. 7B, an embodiment of a gas
delivery substrate for mounting gas supply components of a gas
delivery system for a semiconductor processing apparatus is
illustrated. For example, FIG. 7A and FIG. 7B show alternate views
of the substrate mounted with gas supply components depicted in
FIG. 6A. FIG. 7A shows a three-dimensional view of the substrate
with gas supply components mounted on both sides. FIG. 7B
illustrates a top view of the substrate shown in FIG. 7A. The
substrate can be configured to receive and mount gas supply
components in any configuration. For example, the gas supply
components can be organized in different sections on any side of
the substrate. In addition, the substrate can be configured with
one or more gas outlets or openings for allowing gas to exit the
substrate. The outlets can be included on any side of the
substrate. The gas outlets can be configured to connect to one or
more gas lines and/or a processing chamber downstream.
[0043] The gas delivery substrate can be configured to receive and
mount gas supply components such that different components can be
shared between different gas lines. This design can save space and
reduce costs while also reducing gas pulsing and switching times.
In addition, FIG. 7B illustrates an example of the substrate being
configured to receive and mount gas supply components in a
circumferentially spaced arrangement on the substrate. In other
words, the gas supply components can be spaced in a ring formation
around a common point. For example, the substrate can comprise a
multi-inlet mixing manifold, where the gas inlets are spaced
equally from a center mixing chamber of the manifold. In such an
arrangement, the length scales for all gas species approach zero,
or are zero. The gas inlets can be spaced on the substrate such
that radial lines drawn from the gas inlets to a center point of
the center mixing chamber or plenum are the same length.
[0044] For example, a mixing manifold within the substrate can
include a cylindrical mixing chamber housed within one or more
layers or on a surface of the substrate, and the gas inlets may be
located at circumferentially spaced locations on any side of the
substrate. Arranging all gases in a cylindrical arrangement in this
way collapses a linear tubular design into a single mixing
point--that is to say, by arranging all gases in a circular
arrangement such that the length scale approaches zero (or is
zero), high and low flow gases can be mixed instantly, and co-flow
effects (i.e., gas mixing delays due to gas position or location)
can be eliminated.
[0045] In embodiments, a manual valve may be mounted on the gas
delivery substrate for carrying out the supply or isolation of a
particular gas supply. The manual valve may also have a
lockout/tagout device above it. Worker safety regulations often
mandate that plasma processing manufacturing equipment include
activation prevention capability, such as a lockout/tagout
mechanism. A lockout generally refers, for example, to a device
that uses positive means such as a lock, either key or combination
type, to hold an energy-isolating device in a safe position. A
tagout device generally refers, for example, to any prominent
warning device, such as a tag and a means of attachment that can be
securely fastened to an energy-isolating device in accordance with
an established procedure.
[0046] A regulator may be mounted on the gas delivery substrate to
regulate the gas pressure of the gas supply and a pressure gas may
be used to monitor the pressure of the gas supply. In embodiments,
the pressure may be preset and need not be regulated. In other
embodiments, a pressure transducer having a display to display the
pressure may be used. The pressure transducer may be positioned
next to the regulator. A filter may be used to remove impurities in
the supply gas. A primary shut-off valve may be used to prevent any
corrosive supply gases from remaining in the substrate. The primary
shut-off valve may be, for example, a two-port valve having an
automatic pneumatically operated valve assembly that causes the
valve to become deactivated (closed), which in turn effectively
stops gas flow within the substrate. Once deactivated, a
non-corrosive purge gas, such as nitrogen, may be used to purge one
or more portions within the substrate. The purge gas component and
the substrate may have, for example, three ports to provide for the
purge process (i.e., an entrance port, an exit port, and a
discharge port).
[0047] A mass flow controller (MFC) may be located adjacent the
purge valve. The MFC accurately measures the flow rate of the
supply gas. Positioning the purge valve next to the MFC allows a
user to purge any corrosive supply gases in the MFC. A mixing valve
next to the MFC may be used to control the amount of supply gas to
be mixed with other supply cases on the substrate. In an
embodiment, a portion of the MFC can be built into one or more
layers of the substrate. For example, a flow restrictor (e.g., a
filter with one or more small holes) or a flow diverter can be
built into one or more layers of the substrate.
[0048] In embodiments, a discrete MFC may independently control
each gas supply. Exemplary gas component arrangements, and methods
and apparatuses for gas delivery are described, for example, in
U.S. Patent Application Publication No. 2010/0326554, U.S. Patent
Application Publication No. 2011/0005601, U.S. Patent Application
Publication No. 2013/0255781, U.S. Patent Application Publication
No. 2013/0255782, U.S. Patent Application Publication No.
2013/0255883, U.S. Pat. No. 7,234,222, U.S. Pat. No. 8,340,827, and
U.S. Pat. No. 8,521,461, each of which are commonly assigned, and
the entire disclosures of which are hereby incorporated by
reference herein in their entireties.
[0049] In other embodiments, MFCs may be used to initiate the
desired flow set point for each gas and then release the respective
gases for immediate mixing in a mixing manifold within the gas
delivery substrate. Individual gas flow measurement and control may
be performed by each respective MFC. Alternatively, a single MFC
controller can operate multiple gas lines.
[0050] In embodiments, MFCs may be controlled by a remote server or
controller. Each of the MFCs may be a wide range MFC having the
ability to perform as either a high flow MFC or a low flow MFC. The
controller may be configured to control and change the flow rate of
a gas in each of the MFCs.
[0051] The present disclosure further provides, in embodiments, a
method of using a gas delivery substrate for mounting gas supply
components of a gas delivery system for a semiconductor processing
apparatus for supplying process gas to a processing chamber of a
plasma processing apparatus. Such a method may include, for
example, delivering different gases between gas supply components
mounted on the substrate through conduits within the substrate to a
mixing manifold or chamber within the substrate. Initially, the
gases are delivered to the substrate through a plurality of gas
inlets on a surface thereof. After mixing within a mixing manifold,
the gases exit the substrate through one or more outlets. The gas
inlets can be equally spaced from a center mixing chamber of the
mixing manifold, such that the length scale of each gas species is
the same and when gas is flowed from gas supplies to the mixing
manifold within the substrate, the gas delivery time for each gas
is the same. Alternatively, the gas supply components and gas
inlets can be spaced in linear or non-linear arrangements.
[0052] Such a method may further include, for example, delivering
gas through a gas delivery substrate including a first layer having
vertical through holes, a second layer having vertical through
holes and horizontal gas channels, and a third layer having
vertical through holes, some of which are gas conduits. The first,
second and the third layers of the substrate being bonded together
such that the horizontal gas channels of the second layer are in
fluid communication with at least some of the vertical through
holes in the first layer and/or the third layer. The method further
includes delivering the gas between a plurality of gas supply
components via the second layer and the first layer and/or the
third layer of the substrate. In addition, the gas delivery
substrate includes one or more openings for allowing gas to exit
the substrate to one or more gas lines or to a downstream
processing chamber.
[0053] In addition, the present disclosure provides a method of
supplying process gas through a gas delivery substrate for mounting
gas supply components to a processing chamber of a plasma
processing apparatus. Such a method may include, for example,
delivery gases from a plurality of gas supplies in fluid
communication with a plurality of gas inlets on a surface of a
substrate for mounting gas supply components having at least one
mixing manifold outlet; flowing at least two different gases from
the plurality of gas supplies to the substrate to create a gas
mixture; and supplying the gas mixture to a plasma processing
chamber coupled downstream of the substrate. In an embodiment, the
gas mixture can be combined with a tuning gas before delivery to a
processing chamber downstream.
[0054] In embodiments, mass flow controllers can initiate flow set
points for each of the at least two different gases and release
them simultaneously for immediate mixing in a mixing manifold
within the substrate. One of the gases may be a tuning gas which
may be delivered to the mixing manifold of combined to the gas
mixture downstream from a mixing manifold.
[0055] In an embodiment, gas enters the substrate via a plurality
of gas inlets/openings on a surface of the substrate and enters a
mixing manifold within the substrate. The gas mixture may then exit
the substrate via one or more exit outlets/openings. After exiting
the substrate, the gas may be delivered to one or more gas lines,
or directly to a processing chamber. The mixing manifold may be
provided within one or more layers of the substrate or be external
to the substrate. In other embodiments, the gas may be added to
another array of gases or mixed gases, another substrate mounted
with gas supply components or a gas stick.
[0056] While embodiments disclosed herein have been described in
detail with reference to specific embodiments thereof, it will be
apparent to those skilled in the art that various changes and
modifications can be made, and equivalents employed, without
departing from the scope of the appended claims.
* * * * *