U.S. patent application number 14/289694 was filed with the patent office on 2015-12-03 for semiconductor arrangement and formation thereof.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Company Limited. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company Limited. Invention is credited to Helen Shu-Hui Chang, Chih-Liang Chen, Wei-Cheng Lin, Kam-Tou Sio, Jiann-Tyng Tzeng, Charles Chew-Yuen Young.
Application Number | 20150349071 14/289694 |
Document ID | / |
Family ID | 54363561 |
Filed Date | 2015-12-03 |
United States Patent
Application |
20150349071 |
Kind Code |
A1 |
Chen; Chih-Liang ; et
al. |
December 3, 2015 |
SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
Abstract
A semiconductor arrangement and methods of formation are
provided. The semiconductor arrangement includes a first contact
having first contact dimensions that are relative to first gate
dimensions of at least one of a first gate or a second gate, where
relative refers to a specific relationship between the first
contact dimensions and the first gate dimensions. The first contact
is between the first gate and the second gate. The first contact
having the first contact dimensions relative to the first gate
dimensions has lower resistance with little to no increased
capacitance, as compared to a semiconductor arrangement having
first contact dimensions not in accordance with the specific
relationship. The semiconductor arrangement having the lower
resistance with little to no increased capacitance exhibits at
least one of improved performance or reduced power requirements
than a semiconductor arrangement that does not have such lower
resistance with little to no increased capacitance.
Inventors: |
Chen; Chih-Liang; (Hsinchu
City, TW) ; Chang; Helen Shu-Hui; (Baoshan Township,
TW) ; Young; Charles Chew-Yuen; (Cupertino, CA)
; Tzeng; Jiann-Tyng; (Hsin Chu, TW) ; Sio;
Kam-Tou; (Zhubei City, TW) ; Lin; Wei-Cheng;
(Taichung City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Company Limited |
Hsin-Chu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Company Limited
Hsin-Chu
TW
|
Family ID: |
54363561 |
Appl. No.: |
14/289694 |
Filed: |
May 29, 2014 |
Current U.S.
Class: |
257/392 ;
438/586 |
Current CPC
Class: |
H01L 29/423 20130101;
H01L 27/0207 20130101; H01L 29/417 20130101; H01L 21/823431
20130101; H01L 29/42356 20130101; H01L 27/088 20130101; H01L
21/823456 20130101; H01L 21/823437 20130101; H01L 29/41775
20130101; H01L 21/823475 20130101 |
International
Class: |
H01L 29/417 20060101
H01L029/417; H01L 21/8234 20060101 H01L021/8234; H01L 29/423
20060101 H01L029/423; H01L 27/088 20060101 H01L027/088 |
Claims
1. A semiconductor arrangement comprising: a first gate having a
first gate height and a first gate length, the first gate adjacent
a first contact having a first contact width, a first bottom
contact length and a first top contact length lying within a first
top contact length plane, the first top contact length plane a
first critical contact distance from a bottom surface of the first
contact; and a second gate having a second gate height and a second
gate length a first pitch distance from the first gate, the second
gate adjacent the first contact, such that the first contact is
between the first gate and the second gate, where dimensions of the
semiconductor arrangement conform to ( ( k 2 .times. H ) + ( k 3
.times. L ) + P - k 4 ) ( ( k 5 .times. H ) + P + ( k 6 .times. L )
) .ltoreq. ~ 0.56 , ##EQU00005## where k2 is a second constant of
about 0.26 to about 0.30, H is at least one of the first gate
height or the second gate height, k3 is a third constant of about
0.70 to about 0.74, L is at least one of the first gate length or
the second gate length, P is the first pitch distance, k4 is a
fourth constant of about 48 to about 52, k5 is a fifth constant of
about 0.18 to about 0.22, and k6 is a sixth constant of about 0.78
to about 0.82.
2. The semiconductor arrangement of claim 1, where the dimensions
of the semiconductor arrangement conform to W.gtoreq.k7.times.L,
where W is a sum of contact widths of contacts between the first
gate and the second gate, k7 is a seventh constant of about 1.48 to
about 1.52, and L is at least one of the first gate length or the
second gate length.
3. The semiconductor arrangement of claim 1, where the dimensions
of the semiconductor arrangement conform to
C.sub.tl.gtoreq.(k8.times.H)+(k9.times.L), where C.sub.tl is the
first top contact length, k8 is an eighth constant of about 0.18 to
about 0.22, H is at least one of the first gate height or the
second gate height, k9 is a ninth constant of about 0.74 to about
0.78, and L is at least one of the first gate length or the second
gate length.
4. The semiconductor arrangement of claim 1, where the dimensions
of the semiconductor arrangement conform to
C.sub.bl.gtoreq.(k10.times.H)+(k11.times.L), where C.sub.bl is the
first bottom contact length, k10 is a tenth constant of about 0.14
to about 0.18, H is at least one of the first gate height or the
second gate height, k11 is an eleventh constant of about 0.66 to
about 0.70, and L is at least one of first gate length or the
second gate length.
5. The semiconductor arrangement of claim 1, where the dimensions
of the semiconductor arrangement conform to
C.sub.al.gtoreq.(k12.times.H)+(k13.times.L), where C.sub.al is a
first average length comprising an average of the first bottom
contact length and the first top contact length, k12 is a twelfth
constant of about 0.18 to about 0.22, H is at least one of the
first gate height or the second gate height, k13 is a thirteenth
constant of about 0.68 to about 0.72, and L is at least one of the
first gate length or the second gate length.
6. The semiconductor arrangement of claim 1, comprising: a second
contact between the second gate and a third gate having a third
gate height and a third gate length, the second contact having a
second contact width, a second bottom contact length and a second
top contact length lying within a second top contact length plane,
the second top contact length plane a second critical contact
distance from a bottom surface of the second contact; and a third
contact between the second gate and the third gate, the third
contact having a third contact width, a third bottom contact length
and a third top contact length lying within a third top contact
length plane, the third top contact length plane a third critical
contact distance from a bottom surface of the third contact.
7. The semiconductor arrangement of claim 6, where the dimensions
of the semiconductor arrangement conform to D.sub.c=k1.times.L,
where D.sub.c is at least one of the first critical contact
distance, the second critical contact distance or the third
critical contact distance, k1 is a first constant of about 1.58 to
about 1.62, and L is at least one of the first gate length, the
second gate length or the third gate length.
8. The semiconductor arrangement of claim 6, where the dimensions
of the semiconductor arrangement conform to
C.sub.tl.gtoreq.(k8.times.H)+(k9.times.L), where C.sub.tl is a top
contact length average of the second top contact length and the
third top contact length, k8 is an eighth constant of about 0.18 to
about 0.22, H is at least one of the second gate height or the
third gate height, k9 is a ninth constant of about 0.74 to about
0.78, and L is at least one of the second gate length or the third
gate length.
9. The semiconductor arrangement of claim 6, where the dimensions
of the semiconductor arrangement conform to
C.sub.bl.gtoreq.(k10.times.H)+(k11.times.L), where C.sub.bl is a
bottom contact length average of the second bottom contact length
and the third bottom contact length, k10 is a tenth constant of
about 0.14 to about 0.18, H is at least one of the second gate
height or the third gate height, K11 is an eleventh constant of
about 0.66 to about 0.70, and L is at least one of second gate
length or the third gate length.
10. The semiconductor arrangement of claim 6, where the dimensions
of the semiconductor arrangement conform to
C.sub.al.gtoreq.(k12.times.H)+(k13.times.L), where C.sub.al is a
second average length comprising an average of the second bottom
contact length, the third bottom contact length, the second top
contact length and the third top contact length, k12 is a twelfth
constant of about 0.18 to about 0.22, H is at least one of the
second gate height or the third gate height, k13 is a thirteenth
constant of about 0.68 to about 0.72, and L is at least one of the
second gate length or the third gate length.
11.-15. (canceled)
16. A semiconductor arrangement comprising: a first gate having a
first gate height and a first gate length, the first gate adjacent
a first contact having a first contact width, a first bottom
contact length and a first top contact length lying within a first
top contact length plane; and a second gate having a second gate
height and a second gate length a first pitch distance from the
first gate, the second gate adjacent the first contact, such that
the first contact is between the first gate and the second gate,
where dimensions of the semiconductor arrangement conform to ( ( k
2 .times. H ) + ( k 3 .times. L ) + P - k 4 ) ( ( k 5 .times. H ) +
P + ( k 6 .times. L ) ) .ltoreq. ~ 0.56 ##EQU00006## and
W.gtoreq.k7.times.L, where k2 is a second constant of about 0.26 to
about 0.30, H is at least one of the first gate height or the
second gate height, k3 is a third constant of about 0.70 to about
0.74, L is at least one of the first gate length or the second gate
length, P is the first pitch distance, k4 is a fourth constant of
about 48 to about 52, k5 is a fifth constant of about 0.18 to about
0.22, k6 is a sixth constant of about 0.78 to about 0.82, W is a
sum of contact widths of contacts between the first gate and the
second gate, and k7 is a seventh constant of about 1.48 to about
1.52.
17. The semiconductor arrangement of claim 16, where the dimensions
of the semiconductor arrangement conform to
C.sub.tl.gtoreq.(k8.times.H)+(k9.times.L), where C.sub.tl is the
first top contact length, k8 is an eighth constant of about 0.18 to
about 0.22, H is at least one of the first gate height or the
second gate height, k9 is a ninth constant of about 0.74 to about
0.78, and L is at least one of the first gate length or the second
gate length.
18. The semiconductor arrangement of claim 16, where the dimensions
of the semiconductor arrangement conform to
C.sub.bl.gtoreq.(k10.times.H)+(k11.times.L), where C.sub.bl is the
first bottom contact length, k10 is a tenth constant of about 0.14
to about 0.18, H is at least one of the first gate height or the
second gate height, K11 is an eleventh constant of about 0.66 to
about 0.70, and L is at least one of first gate length or the
second gate length.
19. The semiconductor arrangement of claim 16, where the dimensions
of the semiconductor arrangement conform to
C.sub.al.gtoreq.(k12.times.H)+(k13.times.L), where C.sub.al is a
first average length comprising an average of the first bottom
contact length and the first top contact length, k12 is a twelfth
constant of about 0.18 to about 0.22, H is at least one of the
first gate height or the second gate height, k13 is a thirteenth
constant of about 0.68 to about 0.72, and L is at least one of the
first gate length or the second gate length.
20. The semiconductor arrangement of claim 16, the first top
contact length plane a first critical contact distance from a
bottom surface of the first contact, where the dimensions of the
semiconductor arrangement conform to D.sub.c=k1.times.L, where
D.sub.c is the first critical contact distance, k1 is a first
constant of about 1.58 to about 1.62, and L is at least one of the
first gate length or the second gate length.
21. A semiconductor arrangement comprising: a gate having a gate
length and a gate height; and a contact adjacent the gate, where a
bottom surface of the contact has a bottom contact length that is
greater than or equal to (k10.times.H)+(k11.times.L), where k10 is
a tenth constant of about 0.14 to about 0.18, H is the gate height,
K11 is an eleventh constant of about 0.66 to about 0.70, and L is
the gate length.
22. The semiconductor arrangement of claim 21, the contact
comprising a critical contact region extending from the bottom
surface to a top contact length plane, the top contact length plane
a critical contact distance from the bottom surface, the critical
contact distance conforming to (k1.times.L), where k1 is a first
constant of about 1.58 to about 1.62, and L is the gate length.
23. The semiconductor arrangement of claim 22, wherein the contact
has a top contact length at the top contact length plane, the top
contact length greater than or equal to (k8.times.H)+(k9.times.L),
where k8 is an eighth constant of about 0.18 to about 0.22, H is
the gate height, and k9 is a ninth constant of about 0.74 to about
0.78, and L is the gate length.
24. The semiconductor arrangement of claim 22, wherein an average
length of the critical contact region is greater than or equal to
(k12.times.H)+(k13.times.L), where k12 is a twelfth constant of
about 0.18 to about 0.22, H is the gate height, k13 is a thirteenth
constant of about 0.68 to about 0.72, and L is the gate length.
25. The semiconductor arrangement of claim 21, comprising a fin,
wherein the gate surrounds at least 3 sides of the fin.
Description
BACKGROUND
[0001] In a semiconductor device, such as a transistor, current
flows through a channel region between a source region and a drain
region upon application of a sufficient voltage or bias to a gate
of the device. When current flows through the channel region, the
transistor is generally regarded as being in an `on` state, and
when current is not flowing through the channel region, the
transistor is generally regarded as being in an `off` state.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0003] FIG. 1 is a flow diagram illustrating a method of forming a
semiconductor arrangement, in accordance with some embodiments.
[0004] FIG. 2 is an illustration of a semiconductor arrangement, in
accordance with some embodiments.
[0005] FIG. 3 is an illustration of a semiconductor arrangement, in
accordance with some embodiments.
[0006] FIG. 4 is an illustration of a semiconductor arrangement, in
accordance with some embodiments.
[0007] FIG. 5 is an illustration of a semiconductor arrangement, in
accordance with some embodiments.
[0008] FIG. 6 is a graphic representation of values associated with
semiconductor arrangements, in accordance with some
embodiments.
[0009] FIG. 7 is a graphic representation of values associated with
semiconductor arrangements, in accordance with some
embodiments.
[0010] FIG. 8 is a graphic representation of values associated with
semiconductor arrangements, in accordance with some
embodiments.
[0011] FIG. 9 is a graphic representation of values associated with
semiconductor arrangements, in accordance with some
embodiments.
DETAILED DESCRIPTION
[0012] The following disclosure provides many different
embodiments, or examples, for implementing different features of
the provided subject matter. Specific examples of components and
arrangements are described below to simplify the present
disclosure. These are, of course, merely examples and are not
intended to be limiting. For example, the formation of a first
feature over or on a second feature in the description that follows
may include embodiments in which the first and second features are
formed in direct contact, and may also include embodiments in which
additional features may be formed between the first and second
features, such that the first and second features may not be in
direct contact. In addition, the present disclosure may repeat
reference numerals and/or letters in the various examples. This
repetition is for the purpose of simplicity and clarity and does
not in itself dictate a relationship between the various
embodiments and/or configurations discussed.
[0013] Further, spatially relative terms, such as "beneath,"
"below," "lower," "above," "upper" and the like, may be used herein
for ease of description to describe one element or feature's
relationship to another element(s) or feature(s) as illustrated in
the figures. The spatially relative terms are intended to encompass
different orientations of the device in use or operation in
addition to the orientation depicted in the figures. The apparatus
may be otherwise oriented (rotated 90 degrees or at other
orientations) and the spatially relative descriptors used herein
may likewise be interpreted accordingly.
[0014] One or more techniques for forming a semiconductor
arrangement and resulting structures formed thereby are provided
herein.
[0015] A first method 100 of forming a semiconductor arrangement
200 is illustrated in FIG. 1, and one or more semiconductor
arrangements formed by such a method are illustrated in FIGS. 2-5.
FIG. 2 is a top view of the semiconductor arrangement 200, and
FIGS. 3 and 4 are cross sectional views of the semiconductor
arrangement 200 at various stages of fabrication, taken along a
first line 240 in FIG. 2. FIG. 5 is a 3D cross-sectional view of
the semiconductor arrangement 200 as viewed from a perspective
indicated by a second line 5-5 in FIG. 2.
[0016] In some embodiments, such as illustrate in FIG. 4, a first
gate 208a of the semiconductor arrangement 200 has a first gate
height 222a and a first gate length 203a. The first gate 208a is
adjacent a first contact 215a having a first bottom contact length
223a and a first top contact length 227a lying within a first top
contact length plane 214a. In some embodiments, the first top
contact length plane 214a is parallel to a bottom surface 215a1 of
the first contact 215a. In some embodiments, the first top contact
length plane 214a is a first critical contact distance 219a from
the bottom surface 215a1 of the first contact 215a. In some
embodiments, dimensions of the semiconductor arrangement 200, such
as the first critical contact distance 219a, conform to equation
(1) below.
D.sub.c=k1.times.L (1)
[0017] In equation (1), D.sub.c is a critical contact distance of a
contact, k1 is a first constant and L is a gate length of a gate
adjacent the contact having the critical contact distance.
According to some embodiments, D.sub.c thus corresponds to the
first critical contact distance 219a of the first contact 215a and
L corresponds to the first gate length 203a of the first gate 208a
such that the first critical distance 219a of the first contact
215a is k1 times the first gate length 203a of the first gate 208a.
In some embodiments, the first constant k1 is approximately 1.6. In
some embodiments, the first constant k1 is about 1.58 to about
1.62, such that the critical distance D.sub.c is about 1.58 times
the gate length to about 1.62 times the gate length. In some
embodiments, such as where the first gate length 203a is about 75
.mu.m, the first critical contact distance 219a is thus between
about 39.5 .mu.m to about 40.5 .mu.m ((75 .mu.m times about
1.58=about 39.5 .mu.m) to (75 .mu.m times about 1.62=about 40.5
.mu.m)).
[0018] In some embodiments, a second gate 208b has a second gate
height 222b and a second gate length 203b. In some embodiments, the
first gate 208a is a first pitch distance 230a from the second gate
208b, where the first pitch distance 230a is measured from a
location of the first gate 208a to a corresponding location of the
second gate 208b, such as from the middle of the first gate 208a to
the middle of the second gate 208b. In some embodiments, the second
gate 208b is adjacent the first contact 215a, such that the first
contact 215a is between the first gate 208a and the second gate
208b. In some embodiments, first contact dimensions of the first
contact 215a are relative to first gate dimensions of at least one
of the first gate 208a or the second gate 208b. In some
embodiments, the first contact dimensions comprise the first bottom
contact length 223a, the first top contact length 227a, the first
critical contact distance 219a, and a first contact width 211a,
illustrated in FIGS. 2 and 5, of the first contact 215a. In some
embodiments, dimensions of the semiconductor arrangement 200
conform to equation (2) below.
( ( k 2 .times. H ) + ( k 3 .times. L ) + P - k 4 ) ( ( k 5 .times.
H ) + P + ( k 6 .times. L ) ) .ltoreq. ~ 0.56 ( 2 )
##EQU00001##
[0019] In equation (2), k2 is a second constant, H is a height of a
gate, such as at least one of the first gate height 222a or the
second gate height 222b, k3 is a third constant, L is a length of a
gate, such as at least one of the first gate length 203a or the
second gate length 203b, P is a pitch distance between adjacent
gates, such as the first pitch distance 230a between the first gate
208a and the second gate 208b, k4 is a fourth constant, k5 is a
fifth constant and k6 is a sixth constant. In some embodiments, the
numerator of the second constant times at least one of the first
gate height 222a or the second gate height 222b (H) plus the third
constant times at least one of the first gate length 203a or the
second gate length 203b (L) plus the first pitch distance 230a (P)
minus the fourth constant divided by the denominator of the fifth
constant times at least one of the first gate height 222a or the
second gate height 222b (H) plus the first pitch distance 230a (P)
plus the sixth constant times at least one of the first gate length
203a or the second gate length 203b (L) is less than or equal to
approximately 0.56, where approximately 0.56 corresponds to about
0.54 to about 0.58.
[0020] In some embodiments, at least one of the second constant k2
is approximately 0.28, the third constant k3 is approximately 0.72,
the fourth constant is approximately 50, the fifth constant is
approximately 0.20 or the sixth constant k6 is approximately 0.80.
In some embodiments, at least one of the second constant k2 is
about 0.26 to about 0.30, the third constant k3 is about 0.70 to
about 0.74, the fourth constant k4 is about 48 to about 52, the
fifth constant k5 is about 0.18 to about 0.22 or the sixth constant
k6 is about 0.78 to about 0.82. In some embodiments, such as where
at least one of the first gate height 222a or the second gate
height 222b (H) is about 75 .mu.m, where at least one of the first
gate length 203a or the second gate length 203b (L) is about 25
.mu.m, and where the first pitch distance 230a (P) is about 50
.mu.m, the left side of equation (2) yields between about 0.45 to
about 0.47, which falls below 0.56 and thus the dimensions of the
semiconductor arrangement 200 conform to equation (2).
[0021] Turning to FIG. 2, the first contact 215a has the first
contact width 211a. In some embodiments, a sum of contact widths
comprises a sum of widths of contacts disposed between adjacent
gates and in a single active area, such as a first active area 207
or a second active area 205. In some embodiments, the dimensions of
the semiconductor arrangement 200, such as the first contact width
211a, conform to equation (3) below.
W.gtoreq.k7.times.L (3)
[0022] In equation (3), W is a sum of contact widths of contacts
disposed between adjacent gates and in a single active area, such
as the first contact width 211a, k7 is a seventh constant and L is
the length of a gate adjacent the contact in question, such as at
least one of the first gate length 203a or the second gate length
203b. In some embodiments, the seventh constant is approximately
1.50. In some embodiments, the seventh constant is about 1.48 to
about 1.52, such that the first contact width 211a (W) is about
1.48 to about 1.52 times greater than or equal to at least one of
the first gate length 203a or the second gate length 203b (L). In
some embodiments, such as where at least one of the first gate
length 203a or the second gate length 203b is about 25 .mu.m the
first contact width 211a is between about 37 .mu.m to about 38
.mu.m.
[0023] In some embodiments, such as illustrated in FIG. 4, the
dimensions of the semiconductor arrangement 200, such as the first
top contact length 227a, conform to equation (4) below.
C.sub.tl.gtoreq.(k8.times.H)+(k9.times.L) (4)
[0024] In equation (4), C.sub.tl is a top contact length of a
contact, such as the first top contact length 227a of the first
contact 215a, k8 is an eighth constant, H is the height of a gate
adjacent the contact in question, such as at least one of the first
gate height 222a or the second gate height 222b, k9 is a ninth
constant and L is the length of the gate adjacent the contact in
question, such as at least one of the first gate length 203a or the
second gate length 203b. In some embodiments, the eighth constant
is approximately 0.20 and the ninth constant is approximately 0.76.
In some embodiments, the eighth constant is about 0.18 to about
0.22 and the ninth constant is about 0.74 to about 0.78 such that,
the first top contact length 227a (CO is greater than or equal to
about 0.18 to about 0.22 times at least one of the first gate
height 222a or the second gate height 222b (H) plus about 0.74 to
about 0.78 times at least one of the first gate length 203a or the
second gate length 203b (L). In some embodiments, such as where at
least one of the first gate height 222a or the second gate height
222b (H) is about 75 .mu.m and at least one of the first gate
length 203a or the second gate length 203b (L) is about 25 .mu.m,
the first top contact length 227a (C.sub.tl) is greater than or
equal to about 32 .mu.m to about 36 .mu.m.
[0025] In some embodiments, the dimensions of the semiconductor
arrangement 200, such as the first bottom contact length 223a,
conform to equation (5) below.
C.sub.bl.gtoreq.(k10.times.H)+(k11.times.L) (5)
[0026] In equation (5), C.sub.bl is a bottom contact length of a
contact, such as the first bottom contact length 223a of the first
contact 215a, k10 is a tenth constant, H is the height of a gate
adjacent the contact in question, such as at least one of the first
gate height 222a or the second gate height 222b, k11 is an eleventh
constant and L is the length of the gate adjacent the contact in
question, such as at least one of the first gate length 203a or the
second gate length 203b. In some embodiments, the tenth constant is
approximately 0.66 and the eleventh constant is approximately 0.70.
In some embodiments, the tenth constant is about 0.14 to about 0.18
and the eleventh constant is about 0.66 to about 0.70 such that the
first bottom contact length 223a (C.sub.bl) is greater than or
equal to about 0.14 to about 0.18 times at least one of the first
gate height 222a or the second gate height 222b (H) plus about 0.66
to about 0.70 times at least one of first gate length 203a or the
second gate length 203b (L). In some embodiments, such as where at
least one of the first gate height 222a or the second gate height
222b (H) is about 75 .mu.m and at least one of the first gate
length 203a or the second gate length 203b (L) is about 25 .mu.m,
the first bottom contact length 223a (C.sub.bl) is greater than or
equal to about 27 .mu.m to about 31 .mu.m.
[0027] In some embodiments, the dimensions of the semiconductor
arrangement 200, such as a first average length comprising an
average of the first bottom contact length 223a and the first top
contact length 227a, conform to equation (6) below.
C.sub.al.gtoreq.(k12.times.H)+(k13.times.L) (6)
[0028] In equation (6), C.sub.al is an average contact length of a
contact, such as an average of the first bottom contact length 223a
of the first contact 215a and the first top contact length 227a of
the first contact 215a, k12 is a twelfth constant, H is the height
of a gate adjacent the contact in question, such as at least one of
the first gate height 222a or the second gate height 222b, k13 is a
thirteenth constant and L is the length of the gate adjacent the
contact in question, such as at least one of the first gate length
203a or the second gate length 203b. In some embodiments, the
twelfth constant is approximately 0.20 and the thirteenth constant
is approximately 0.70. In some embodiments, the twelfth constant is
about 0.18 to about 0.22 and the thirteenth constant is about 0.68
to about 0.72 such that the first average contact length (C.sub.al)
is greater than or equal to about 0.18 to about 0.22 times at least
one of the first gate height 222a or the second gate height 222b
(H) plus about 0.68 to about 0.72 times at least one of the first
gate length 203a or the second gate length 203b (L). In some
embodiments, such as where at least one of the first gate height
222a or the second gate height 222b (H) is about 75 .mu.m and at
least one of the first gate length 203a or the second gate length
203b (L) is about 25 .mu.m, the average contact length (C.sub.al)
is greater than or equal to about 30.5 .mu.m to about 34.5
.mu.m.
[0029] In some embodiments, a contact, such as the first contact
215a, in a semiconductor arrangement having dimensions that conform
to equations (1-6), has lower resistance with little to no
increased capacitance, which reduces power consumption of the
semiconductor arrangement as compared to a semiconductor
arrangement that does not have dimensions that conform to equations
(1-6).
[0030] With reference to FIG. 2, the first active region 207
comprises epitaxial (Epi) caps 206a and 206b, the first gate 208a,
the second gate 208b, and the first contact 215a between the first
gate 208a and the second gate 208b. In some embodiments, the first
active region 207 comprises a third gate 208c adjacent the second
gate 208b, where a second contact 215b1 and a third contact 215b2
are between the second gate 208b and the third gate 208c.
[0031] In some embodiments, the second active region 205 comprises
the Epi caps 206a and 206b, the first gate 208a, the second gate
208b, the third gate 208c, and a fourth contact 216a between the
first gate 208a and the second gate 208b. In some embodiments, the
second active region 205 comprises the third gate 208c adjacent the
second gate 208b, where a fifth contact 216b1 and a sixth contact
216b2 are between the second gate 208b and the third gate 208c.
[0032] In some embodiments, an STI region 209 is between the first
active region 207 and the second active region 205, where the STI
region 209 comprises STI 212, the first gate 208a, the second gate
208b, and the third gate 208c. In some embodiments, the first gate
208a has the first gate length 203a, the second gate 208b has the
second gate length 203b and the third gate 208c has a third gate
length 203c. In some embodiments, the first contact 215a has the
first top contact length 227a, the second contact 215b1 has a
second top contact length 227b1 and the third contact 215b2 has a
third top contact length 227b2.
[0033] In some embodiments, the second contact 215b1 and the third
contact 215b2 are coplanar, such that the second contact 215b1 and
the third contact 215b2 lie along a first contact plane 232a. In
some embodiments, the fifth contact 216b1 and the sixth contact
216b2 are coplanar, such that the fifth contact 216b1 and the sixth
contact 216b2 lie along a second contact plane 232b. In some
embodiments, the first gate 208a is the first pitch distance 230a
from the second gate 208b. In some embodiments, the second gate
208b is a second pitch distance 230b from the third gate 208c,
where the second pitch distance 230b is measured from a location of
the second gate 208b to a corresponding location of the third gate
208c, such as from the middle of the second gate 208b to a middle
of the third gate 208c. In some embodiments, the fourth contact
216a has a fourth top contact length 228a, the fifth contact 216b1
has a fifth top contact length 228b1 and the sixth contact 216b2
has a sixth top contact length 228b2.
[0034] At 102 of method 100, as illustrated in FIG. 3, the first
gate 208a having the first gate height 222a and the first gate
length 203a is formed adjacent the second gate 208b having the
second gate height 222b and the second gate length 203b, where the
first gate 208a is the first pitch distance 230a from the second
gate 208b, according to some embodiments. In some embodiments, the
third gate 208c having a third gate height 222c and a third gate
length 203c is formed adjacent the second gate 208b, where the
second gate 208b is the second pitch distance 230b from the third
gate 208c. In some embodiments, at least one of the first gate
208a, the second gate 208b or the third gate 208c is formed with
dimensions so as to conform to equation (2). In some embodiments,
at least one of the dimensions of the first gate 208a are equal to
the dimensions of the second gate 208b, the dimensions of the
second gate 208b are equal to the dimensions the third gate 208c or
the dimensions of the first gate 208a are equal to the dimensions
of the third gate 208c.
[0035] In some embodiments, at least one of the first gate 208a,
the second gate 208b, or the third gate 208c are formed over the
Epi caps 206a and 206b. In some embodiments, the Epi caps 206a and
206b are formed over one or more fins 204, as illustrated in FIG.
5. In some embodiments, the Epi caps 206a and 206b are grown. In
some embodiments, the Epi caps 206a and 206b comprises at least one
of silicon or germanium. In some embodiments, the one or more fins
204 comprise the same material as a substrate 202. In some
embodiments, the substrate 202 comprises an epitaxial layer, a
silicon-on-insulator (SOI) structure, a wafer, or a die formed from
a wafer, according to some embodiments. In some embodiments, the
substrate 202 comprises at least one of silicon or germanium. In
some embodiments, the one or more fins 204 are formed in the
substrate 202 of the first active region 207. In some embodiments,
the second active region 205 is formed substantially the same way
as the first active region 207. In some embodiments, as illustrated
in FIGS. 3 and 4, a first gate dielectric 234a is formed prior to
the formation of the first gate 208a, such that the first gate 208a
is over the first gate dielectric 234a. In some embodiments, a
second gate dielectric 234b is formed prior to the formation of the
second gate 208b, such that the second gate 208b is over the second
gate dielectric 234b. In some embodiments, a third gate dielectric
234c is formed prior to the formation of the third gate 208c, such
that the third gate 208c is over the third gate dielectric
234c.
[0036] At 104 of method 100, as illustrated in FIG. 4, the first
contact 215a formed between the first gate 208a and the second gate
208b, where the first contact 215a has the first contact width
211a, as illustrated in FIG. 2, the first bottom contact length
223a and the first top contact length 227a, where the first contact
dimensions are relative to the first gate dimensions of at least
one of the first gate 208a or the second gate 208b, according to
some embodiments. In some embodiments, the first contact dimensions
of the first contact conform to equations (1-6). In some
embodiments, as illustrated in FIGS. 2 and 5, the second contact
215b1 and the third contact 215b2 are formed between the second
gate 208b and the third gate 208c, where the second contact 215b1
has a second contact width 211b1 and the third contact 215b2 has a
third contact width 211b2.
[0037] In some embodiments, as illustrated in FIG. 4, the second
contact 215b1 has a second bottom contact length 223b and the
second top contact length 227b1. In some embodiments, the second
contact dimensions of the second contact 215b1 comprise the second
bottom contact length 223b, the second top contact length 227b1, a
second critical contact distance 219b, and the second contact width
211b1. In some embodiments, the third contact 215b2 has a third
bottom contact length (not shown) and a third top contact length
227b2, illustrated in FIGS. 2 and 5. In some embodiments, the third
contact dimensions of the third contact 215b2 comprise the third
bottom contact length (not shown), the third top contact length
227b2, a third critical contact distance (not shown), and the third
contact width 211b2.
[0038] In some embodiments, a second top contact length plane 214b
is the second critical contact distance 219b from a bottom surface
215b1a of the second contact 215b1. In some embodiments, the second
top contact length plane 214b is parallel to the bottom surface
215b1a of the second contact 215b1. In some embodiments, the second
critical contact distance 219b is about 1.58 to about 1.62 times at
least one of the second gate length 203b or the third gate length
203c, and thus conforms to equation (1). Turning to FIG. 2, at
least one of the second contact 215b1 or the third contact 215b2
are formed to conform to equation (3) such that a sum of the second
contact width 211b1 and the third contact width 211b2 is about 1.48
to about 1.52 times greater than or equal to at least one of the
second gate length 203b or the third gate length 203c, according to
some embodiments.
[0039] In some embodiments, such as illustrated in FIG. 4, at least
one of the second contact 215b1 or the third contact 215b2 are
formed to conform to equation (4) such that the top contact length
average (CO of the second top contact length 227b1 and the third
top contact length 227b2, illustrated in FIGS. 2 and 5, is greater
than or equal to about 0.18 to about 0.22 times at least one of the
second gate height 222b or the third gate height 222c, illustrated
in FIG. 4, plus about 0.74 to about 0.78 times at least one of the
second gate length 203b or the third gate length 203c.
[0040] In some embodiments, at least one of the second contact
215b1 or the third contact 215b2, illustrated in FIGS. 2 and 5, are
formed to conform to equation (5) such that the bottom contact
length average (C.sub.bl) of the second bottom contact length 223b,
illustrated in FIG. 4, and the third bottom contact length (not
shown) is greater than or equal to about 0.14 to about 0.18 times
at least one of the second gate height 222b or the third gate
height 222c plus about 0.66 to about 0.70 times at least one of
second gate length 203b or the third gate length 203c.
[0041] In some embodiments, at least one of the second contact
215b1 or the third contact 215b2, illustrated in FIGS. 2 and 5, are
formed to conform to equation (6) such that the second average
length (C.sub.al) comprising an average of the second bottom
contact length 223b, illustrated in FIG. 4, the third bottom
contact length (not shown), the second top contact length 227b1 and
the third top contact length 227b2, illustrated in FIGS. 2 and 5,
is greater than or equal to about 0.18 to about 0.22 times at least
one of the second gate height 222a or the third gate height 222b
plus about 0.68 to about 0.72 times at least one of the second gate
length 203b or the third gate length 203c.
[0042] Turning to FIG. 5, in some embodiments, the one or more fins
204 with Epi caps 206a and 206b pass through the second gate 208b,
such that on a first side 256 of the second gate 208b, the Epi caps
206b comprise one of a source or a drain and on a second side 258
of the second gate 208b, the Epi caps 206a comprise a source if the
Epi caps 206b comprise a drain or a drain if the Epi caps 206b
comprises a source. In some embodiments, the STI region 209
comprises the STI 212, where the STI 212 is situated such that the
STI 212 separates the one or more fins 204 with Epi caps 206a and
206b in the first active region 207 from the one or more fins 204
with Epi caps 206a and 206b in the second active region 205. The
third gate 208c is not shown in FIG. 5 to simplify the figure.
[0043] In some embodiments, the fourth contact 216a is formed to
have dimensions that conform to equation (2), where the dimensions
of the fourth contact 216a comprise a fourth bottom contact length
224a, the first top contact length 228a, a fourth critical contact
distance 220a, and a fourth contact width 210a. In some
embodiments, the fifth contact 216b1, illustrated in FIG. 2, is
formed to have dimensions that conform to equation (2), where the
dimensions of the fifth contact comprise a fifth bottom contact
length (not shown), the fifth top contact length 228b1, a fifth
critical contact distance (not shown), and a fifth contact width
210b1. In some embodiments, the sixth contact 216b2 is formed to
have dimensions that conform to equation (2), where the sixth
contact dimension comprise a third bottom contact length 224b, the
sixth top contact length 228b2, a sixth critical contact distance
220b, and a sixth contact width 210b2. In some embodiments, the
fourth contact 216a, the fifth contact 216b1 and the sixth contact
216b2 are formed in the second active region 205 in the same manner
and with the same dimensions as described above with regard to the
first contact 215a, the second contact 215b1 and the third contact
215b2, as illustrated in FIGS. 2-4.
[0044] Turning to FIG. 6, which illustrates a graphic
representation of normalized power in mW/mW on a y-axis versus a
normalized speed in GHz/GHz on an x-axis for semiconductor
arrangements having a cell area limitation of about 1.16.times. web
runtime (W.R.T.), according to some embodiments. In some
embodiments, a curve 304 represents the normalized power versus the
normalized speed of the semiconductor arrangement 200, where the
semiconductor arrangement 200 has dimensions that conform to
equations (1-6) above. In some embodiments, a curve 306 represents
the normalized power versus the normalized speed of a semiconductor
arrangement that has dimensions that do not conform to equations
(1-6) above. In some embodiments, the semiconductor arrangement 200
exhibits an decrease in normalized power or power consumption as
compared to the semiconductor arrangement that does not have
dimensions in accordance with equations (1-6). According to some
embodiments, at a normalized speed of about 2.00 GHz/GHz the
semiconductor arrangement 200 has a decrease 302 in power
consumption of about 15%. In some embodiments, the decrease in
power consumption is attributable, at least in part, to a decreased
contact resistance, such as a decrease in the resistance of the
first contact 215a.
[0045] Turning to FIG. 7, which illustrates a graphic
representation of normalized delay in ps/ps on a y-axis versus a
normalized wire length in um/um on an x-axis for semiconductor
arrangements having a cell area limitation of about 1.16.times.
W.R.T., according to some embodiments. In some embodiments, a line
308 represents the normalized delay versus the normalized wire
length of the semiconductor arrangement 200, where the
semiconductor arrangement 200 has dimensions that conform to
equations (1-6) above. In some embodiments, a line 310 represents
the normalized delay versus the normalized wire length of a
semiconductor arrangement that has dimensions that do not conform
to equations (1-6) above. In some embodiments, the semiconductor
arrangement 200 exhibits a decreased delay for the same normalized
wire length as compared to the semiconductor arrangement that does
not have dimensions in accordance with equations (1-6) above. In
some embodiments, a wire length corresponds to a length of a
contact, such as the first contact 215a. A contact, such as the
first contact 215, of the semiconductor arrangement 200 of equal
length to a corresponding contact of a semiconductor arrangement
not in conformance with equations (1-6) thus has a decreased delay.
The decrease in delay is attributable, at least in part, to a
decreased contact resistance, such as a decrease in the resistance
of the first contact 215a.
[0046] Turning to FIG. 8, which illustrates a graphic
representation of normalized power in mW/mW on a y-axis versus a
normalized speed in GHz/GHz on an x-axis of semiconductor
arrangements having a cell area limitation of about 1.49.times.
W.R.T., according to some embodiments. In some embodiments, a curve
314 represents the normalized power versus the normalized speed of
the semiconductor arrangement 200, where the semiconductor
arrangement 200 has dimensions that conform to equations (1-6)
above. In some embodiments, a curve 316 represents the normalized
power versus the normalized speed of a semiconductor arrangement
that has dimensions that do not conform to equations (1-6) above.
In some embodiments, the semiconductor arrangement 200 exhibits an
decrease in normalized power or power consumption as compared to
the semiconductor arrangement that does not have dimensions in
accordance with equations (1-6). According to some embodiments, at
a normalized speed of about 2.00 GHz/GHz the semiconductor
arrangement 200 has a decrease 312 in power consumption of about
27%. In some embodiments, the decrease in power consumption is
attributable, at least in part, to a decreased contact resistance,
such as a decrease in the resistance of the first contact 215a.
[0047] Turning to FIG. 9, which illustrates a graphic
representation of normalized delay in ps/ps on a y-axis versus a
normalized wire length in um/um on an x-axis for semiconductor
arrangements having a cell area limitation of about 1.49.times.
W.R.T., according to some embodiments. In some embodiments, a line
318 represents the normalized delay versus the normalized wire
length of the semiconductor arrangement 200, where the
semiconductor arrangement 200 has dimensions that conform to
equations (1-6) above. In some embodiments, a line 320 represents
the normalized delay versus the normalized wire length of a
semiconductor arrangement that has dimensions that do not conform
to equations (1-6) above. In some embodiments, the semiconductor
arrangement 200 exhibits a decreased delay for the same normalized
wire length as compared to the semiconductor arrangement that does
not have dimensions in accordance with equations (1-6) above. In
some embodiments, a wire length corresponds to a length of a
contact, such as the first contact 215a. A contact, such as the
first contact 215, of the semiconductor arrangement 200 of equal
length to a corresponding contact of a semiconductor arrangement
not in conformance with equations (1-6) thus has a decreased delay.
The decrease in delay is attributable, at least in part, to a
decreased contact resistance, such as a decrease in the resistance
of the first contact 215a.
[0048] According to some embodiments, a semiconductor arrangement
comprises a first gate having a first gate height and a first gate
length, the first gate adjacent a first contact having a first
contact width, a first bottom contact length and a first top
contact length lying within a first top contact length plane, the
first top contact length plane a first critical contact distance
from a bottom surface of the first contact. According to some
embodiments, the arrangement comprises a second gate having a
second gate height and a second gate length a first pitch distance
from the first gate, the second gate adjacent the first contact,
such that the first contact is between the first gate and the
second gate. In some embodiments, dimensions of the semiconductor
arrangement conform to
( ( k 2 .times. H ) + ( k 3 .times. L ) + P - k 4 ) ( ( k 5 .times.
H ) + P + ( k 6 .times. L ) ) .ltoreq. ~ 0.56 , ##EQU00002##
where k2 is a second constant of about 0.26 to about 0.30, H is at
least one of the first gate height or the second gate height, k3 is
a third constant of about 0.70 to about 0.74, L is at least one of
the first gate length or the second gate length, P is the first
pitch distance, k4 is a fourth constant of about 48 to about 52, k5
is a fifth constant of about 0.18 to about 0.22 and k6 is a sixth
constant of about 0.78 to about 0.82.
[0049] According to some embodiments, a method of forming a
semiconductor arrangement comprises forming a first gate having a
first gate height and a first gate length adjacent a second gate
having a second gate height and a second gate length a first pitch
distance from the first gate. According to some embodiments, the
method of forming a semiconductor arrangement comprises forming a
first contact between the first gate and the second gate, the first
contact having a first contact width, a first bottom contact length
and a first top contact length. In some embodiments, dimensions of
the semiconductor arrangement is formed to conform to
( ( k 2 .times. H ) + ( k 3 .times. L ) + P - k 4 ) ( ( k 5 .times.
H ) + P + ( k 6 .times. L ) ) .ltoreq. ~ 0.56 , ##EQU00003##
where k2 is a second constant of about 0.26 to about 0.30, H is at
least one of the first gate height or the second gate height, k3 is
a third constant of about 0.70 to about 0.74, L is at least one of
the first gate length or the second gate length, P is the first
pitch distance, k4 is a fourth constant of about 48 to about 52, k5
is a fifth constant of about 0.18 to about 0.22 and k6 is a sixth
constant of about 0.78 to about 0.82.
[0050] According to some embodiments, a semiconductor arrangement
comprises a first gate having a first gate height and a first gate
length, the first gate adjacent a first contact having a first
contact width, a first bottom contact length and a first top
contact length lying within a first top contact length plane. In
some embodiments, the semiconductor arrangement comprises a second
gate having a second gate height and a second gate length a first
pitch distance from the first gate, the second gate adjacent the
first contact, such that the first contact is between the first
gate and the second gate. In some embodiments, dimensions of the
semiconductor arrangement conform to
( ( k 2 .times. H ) + ( k 3 .times. L ) + P - k 4 ) ( ( k 5 .times.
H ) + P + ( k 6 .times. L ) ) .ltoreq. ~ 0.56 , ##EQU00004##
where k2 is a second constant of about 0.26 to about 0.30, H is at
least one of the first gate height or the second gate height, k3 is
a third constant of about 0.70 to about 0.74, L is at least one of
the first gate length or the second gate length, P is the first
pitch distance, k4 is a fourth constant of about 48 to about 52, k5
is a fifth constant of about 0.18 to about 0.22 and k6 is a sixth
constant of about 0.78 to about 0.82. In some embodiments,
dimensions of the semiconductor arrangement conforms to
W.gtoreq.k7.times.L where W is a sum of contact widths of contacts
between the first gate and the second gate, k7 is a seventh
constant of about 1.48 to about 1.52, L is at least one of the
first gate length or the second gate length.
[0051] The foregoing outlines features of several embodiments so
that those skilled in the art may better understand the aspects of
the present disclosure. Those skilled in the art should appreciate
that they may readily use the present disclosure as a basis for
designing or modifying other processes and structures for carrying
out the same purposes and/or achieving the same advantages of the
embodiments introduced herein. Those skilled in the art should also
realize that such equivalent constructions do not depart from the
spirit and scope of the present disclosure, and that they may make
various changes, substitutions, and alterations herein without
departing from the spirit and scope of the present disclosure.
[0052] Various operations of embodiments are provided herein. The
order in which some or all of the operations are described should
not be construed to imply that these operations are necessarily
order dependent. Alternative ordering will be appreciated having
the benefit of this description. Further, it will be understood
that not all operations are necessarily present in each embodiment
provided herein. Also, it will be understood that not all
operations are necessary in some embodiments.
[0053] It will be appreciated that layers, features, elements, etc.
depicted herein are illustrated with particular dimensions relative
to one another, such as structural dimensions or orientations, for
example, for purposes of simplicity and ease of understanding and
that actual dimensions of the same differ substantially from that
illustrated herein, in some embodiments. Additionally, a variety of
techniques exist for forming the layers features, elements, etc.
mentioned herein, such as etching techniques, implanting
techniques, doping techniques, spin-on techniques, sputtering
techniques such as magnetron or ion beam sputtering, growth
techniques, such as thermal growth or deposition techniques such as
chemical vapor deposition (CVD), physical vapor deposition (PVD),
plasma enhanced chemical vapor deposition (PECVD), or atomic layer
deposition (ALD), for example.
[0054] Moreover, "exemplary" is used herein to mean serving as an
example, instance, illustration, etc., and not necessarily as
advantageous. As used in this application, "or" is intended to mean
an inclusive "or" rather than an exclusive "or". In addition, "a"
and "an" as used in this application and the appended claims are
generally be construed to mean "one or more" unless specified
otherwise or clear from context to be directed to a singular form.
Also, at least one of A and B and/or the like generally means A or
B or both A and B. Furthermore, to the extent that "includes",
"having", "has", "with", or variants thereof are used, such terms
are intended to be inclusive in a manner similar to the term
"comprising". Also, unless specified otherwise, "first," "second,"
or the like are not intended to imply a temporal aspect, a spatial
aspect, an ordering, etc. Rather, such terms are merely used as
identifiers, names, etc. for features, elements, items, etc. For
example, a first element and a second element generally correspond
to element A and element B or two different or two identical
elements or the same element.
[0055] Also, although the disclosure has been shown and described
with respect to one or more implementations, equivalent alterations
and modifications will occur to others skilled in the art based
upon a reading and understanding of this specification and the
annexed drawings. The disclosure comprises all such modifications
and alterations and is limited only by the scope of the following
claims. In particular regard to the various functions performed by
the above described components (e.g., elements, resources, etc.),
the terms used to describe such components are intended to
correspond, unless otherwise indicated, to any component which
performs the specified function of the described component (e.g.,
that is functionally equivalent), even though not structurally
equivalent to the disclosed structure. In addition, while a
particular feature of the disclosure may have been disclosed with
respect to only one of several implementations, such feature may be
combined with one or more other features of the other
implementations as may be desired and advantageous for any given or
particular application.
* * * * *