U.S. patent application number 14/801377 was filed with the patent office on 2015-11-05 for flexural plate wave device for chip cooling.
The applicant listed for this patent is Broadcom Corporation. Invention is credited to Milind S. Bhagavat, Mehdi Saeidi, Tak Sang Yeung.
Application Number | 20150318230 14/801377 |
Document ID | / |
Family ID | 45697018 |
Filed Date | 2015-11-05 |
United States Patent
Application |
20150318230 |
Kind Code |
A1 |
Bhagavat; Milind S. ; et
al. |
November 5, 2015 |
FLEXURAL PLATE WAVE DEVICE FOR CHIP COOLING
Abstract
Methods, systems, and apparatuses are described for cooling
electronic devices. The electrical device includes an integrated
circuit die (IC) having opposing first and second surfaces, a
plurality of interconnects on the second surface of the IC die that
enable the IC die to be coupled to a substrate, and a flexural
plate wave device. The flexural plate wave device is configured to
generate a stream of air to flow across the electrical device to
cool the IC die during operation of the IC die.
Inventors: |
Bhagavat; Milind S.;
(Fremont, CA) ; Saeidi; Mehdi; (Irvine, CA)
; Yeung; Tak Sang; (Irvine, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Broadcom Corporation |
Irvine |
CA |
US |
|
|
Family ID: |
45697018 |
Appl. No.: |
14/801377 |
Filed: |
July 16, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13173456 |
Jun 30, 2011 |
9123698 |
|
|
14801377 |
|
|
|
|
61376757 |
Aug 25, 2010 |
|
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Current U.S.
Class: |
361/694 ;
257/713 |
Current CPC
Class: |
H05K 7/20154 20130101;
H01L 23/3675 20130101; H05K 7/20145 20130101; H05K 7/20136
20130101; H01L 23/467 20130101; H01L 2924/0002 20130101; H01L
2924/0002 20130101; H01L 2924/00 20130101 |
International
Class: |
H01L 23/467 20060101
H01L023/467; H05K 7/20 20060101 H05K007/20; H01L 23/367 20060101
H01L023/367 |
Claims
1. An electrical device, comprising: an integrated circuit (IC) die
having opposing first and second surfaces; a plurality of
interconnects on the second surface of the IC die that enable the
IC die to be coupled to a substrate; a flexural plate wave device
configured to generate an acoustic wave through at least a portion
of the flexural plate wave device, the acoustic wave causing
vortexes of air to be pumped across the electrical device to cool
the IC die during operation of the IC die.
2. The electrical device of claim 1, wherein the flexural plate
wave device is on the first surface of the IC die.
3. The electrical device of claim 1, further comprising: a cooling
device having opposing first and second surfaces, wherein the
cooling device is coupled to the IC die, and the flexural plate
wave device is on the first surface of the cooling device.
4. The electrical device of claim 3, further comprising: a
plurality of support members coupled between the first surface of
the cooling device and the first surface of the IC die that mount
the cooling device to the IC die and form a channel between the IC
die and the cooling device; wherein the vortexes of air are pumped
through the channel.
5. The electrical device of claim 4, wherein the second surface of
the cooling device has a recessed region.
6. The electrical device of claim 3, wherein the second surface of
the cooling device is attached to the first surface of the IC die;
wherein the vortexes of air flow across the first surface of the
cooling device.
7. The electrical device of claim 1, wherein the flexural plate
wave device comprises: a base layer; a support layer coupled to the
base layer; a diaphragm layer coupled to the support layer, the
support layer including an opening to form an air gap between the
base layer and the diaphragm layer; a piezoelectric material layer
coupled to the diaphragm layer; and a wave generator formed on the
piezoelectric material layer that is configured to generate the
acoustic wave.
8. The electrical device of claim 7, wherein the wave generator
comprises: a first comb-shaped electrically conductive feature; and
a second comb-shaped electrically conductive feature electrically
isolated from and interlocked with the first comb-shaped
electrically conductive feature; wherein a first oscillating signal
is coupled to the first comb-shaped electrically conductive
feature, and a second oscillating signal is coupled to the second
comb-shaped electrically conductive feature.
9. The electrical device of claim 7, further comprising: a wave
absorber formed on the piezoelectric material layer configured to
receive and absorb the acoustic wave to at least reduce a
reflection of the acoustic wave through the piezoelectric material
layer.
10. The electrical device of claim 9, wherein the wave absorber
comprises: a first comb-shaped electrically conductive feature; and
a second comb-shaped electrically conductive feature interlocked
with the first comb-shaped electrically conductive feature.
11. The electrical device of claim 10, wherein the second
comb-shaped electrically conductive feature is electrically coupled
to the first comb-shaped electrically conductive feature.
12. A cooling device, comprising: a body that has opposing first
and second surfaces; and a flexural plate wave device on the first
surface that is configured to generate an acoustic wave through at
least a portion of the flexural plate wave device, the acoustic
wave causing vortexes of air to be pumped across the cooling device
to cool an integrated circuit (IC) during operation of the
integrated circuit (IC).
13. The cooling device of claim 12, wherein the body is an IC die,
and the second surface is an active surface of the IC die.
14. The cooling device of claim 12, further comprising: a plurality
of support members on the first surface of the body configured to
mount the cooling device to an IC die and form a channel between
the IC die and the cooling device; wherein the vortexes of air are
pumped through the channel.
15. The cooling device of claim 14, wherein the second surface of
the body has a recessed region.
16. The cooling device of claim 12, wherein the second surface of
the body is configured to be attached to an IC die.
17. The cooling device of claim 12, wherein the flexural plate wave
device comprises: a support layer coupled to the body; a diaphragm
layer coupled to the support layer, the support layer including an
opening to form an air gap between the body and the diaphragm
layer; a piezoelectric material layer coupled to the diaphragm
layer; and a wave generator formed in contact with the
piezoelectric material layer that is configured to generate the
acoustic wave.
18. The cooling device of claim 17, wherein the wave generator
comprises: a first comb-shaped electrically conductive feature; and
a second comb-shaped electrically conductive feature electrically
isolated from and interlocked with the first comb-shaped
electrically conductive feature; wherein a first oscillating signal
is coupled to the first comb-shaped electrically conductive
feature, and a second oscillating signal is coupled to the second
comb-shaped electrically conductive feature.
19. The cooling device of claim 17, further comprising: a wave
absorber formed in contact with the piezoelectric material layer
configured to receive and absorb the acoustic wave to prevent the
acoustic wave from reflecting through the piezoelectric material
layer.
20. A method, comprising: operating an integrated circuit (IC) of
an electrical device that generates heat during operation; and
generating an acoustic wave with a flexural plate wave device of
the electrical device, the acoustic wave causing vortexes of air to
be pumped across the electrical device to cool the IC during
operation of the IC.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. application Ser.
No. 13/173,456, now allowed, filed Jun. 30, 2011, which claims the
benefit of U.S. Provisional Application No. 61/376,757, filed on
Aug. 25, 2010, which are both incorporated by reference herein in
their entireties.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The invention relates generally to cooling techniques, and
more particularly to techniques for cooling dies in integrated
circuit packages.
[0004] 2. Background
[0005] Integrated circuit (IC) dies are typically mounted in or on
a package that is attached to a printed circuit board (PCB). Many
types of IC packages exist, including leadless chip carriers (LCC),
ball grid array (BGA) packages, quad flat packages (QFP), etc. One
example advanced type of package is a wafer-level package.
Different types of wafer-level packages exist, including wafer
level chip scale packages (WLCSP), wafer level ball grid array
(WLBGA) packages, and further types. Wafer level packages typically
have an array of interconnects located on a bottom external surface
of the package die, which may have the form of pads, posts, or
balls/bumps (in the case of WLBGA packages). In a WLBGA package, an
array of solder bump interconnects may be mounted directly to the
die when the die has not yet been singulated from its fabrication
wafer. As such, WLBGA packages do not include a package substrate.
WLBGA packages can therefore be made very small, with high pin out,
relative to other IC package types including traditional BGA
packages.
[0006] IC packages often are subjected to high temperatures
resulting from heat dissipation by circuitry during normal
operation. These high temperatures can impair the performance of
the circuits and/or cause thermal stresses in the package.
Accordingly, a package sometimes includes one or more passive
cooling devices, such as heat sinks, coupled to the IC die to
facilitate conduction of heat away from the die. However, the mere
introduction of passive cooling devices may not adequately
dissipate heat from the IC die. Other techniques that are prevalent
in industry use active system cooling devices, such as fans.
However, in handheld devices and limited-space applications, it
typically is not possible to incorporate system level cooling fans.
A failure to adequately dissipate heat from the IC die may
negatively affect the performance and/or reliability of the IC
die.
BRIEF SUMMARY OF THE INVENTION
[0007] A system and/or method for actively cooling an electronic
device using a flexural plate wave device, substantially as shown
in and/or described in connection with at least one of the figures,
as set forth more completely in the claims.
BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES
[0008] The accompanying drawings, which are incorporated herein and
form part of the specification, illustrate embodiments of the
present invention and, together with the description, further serve
to explain the principles involved and to enable a person skilled
in the relevant art(s) to make and use the disclosed
technologies.
[0009] FIG. 1 shows a side view of a conventional integrated
circuit (IC) package mounted to a substrate.
[0010] FIGS. 2-5 show side views of IC packages with respective
cooling mechanisms included therein, according to example
embodiments.
[0011] FIG. 6 shows a perspective view of an example cooling
device, according to an example embodiment.
[0012] FIG. 7 shows a flowchart providing a process for cooling an
electrical device, according to an example embodiment.
[0013] FIG. 8 shows a block diagram view of a surface of an
electrical device having a cooling mechanism formed thereon,
according to an example embodiment.
[0014] FIG. 9 shows a flowchart providing a process for generating
a stream of air to cool an electrical device, according to an
example embodiment.
[0015] FIG. 10 shows a side cross-sectional view of an example
configuration of a flexural plate wave (FPW) device, according to
an example embodiment.
[0016] FIG. 11 shows a top view of an example configuration of a
FPW device, according to an embodiment.
[0017] FIG. 12 shows a view of a wave generator to illustrate
configuring of acoustic wave wavelength and input signal frequency,
according to an example embodiment.
[0018] FIG. 13 shows a graph that includes plots of displacement
amplitude versus frequency for a diaphragm of a FPW device,
according to an example embodiment.
[0019] FIG. 14 shows a top view of example configuration of a FPW
device, according to an example embodiment.
[0020] FIGS. 15A and 15B illustrate a pumping effect and a vortex
effect for an FPW device, according to an example embodiment.
[0021] FIG. 16 shows a graph that includes plots of maximum
streaming velocity versus vibration frequency for an FPW device,
according to an example embodiment.
[0022] FIG. 17 shows a graph that includes plots of maximum
streaming velocity versus vibration amplitude for an FPW device,
according to an example embodiment.
[0023] FIG. 18 shows a graph that includes plots of maximum
streaming velocity versus a gap distance between upper and lower
beams of a FPW device, according to example embodiments.
[0024] FIG. 19 shows a graph that includes a plot of die
temperature versus time, according to an example embodiment.
[0025] FIG. 20 shows a graph that includes plots of
junction-to-ambient thermal resistances with respect to a wave
travel velocity, according to an example embodiment.
[0026] FIG. 21 shows a modeled temperature distribution for an IC
die that does not include a FPW device, according to an example
embodiment.
[0027] FIG. 22 shows a modeled temperature distribution for an IC
die that includes a cooling device, according to an example
embodiment.
[0028] The features and advantages of the disclosed technologies
will become more apparent from the detailed description set forth
below when taken in conjunction with the drawings, in which like
reference characters identify corresponding elements throughout. In
the drawings, like reference numbers generally indicate identical,
functionally similar, and/or structurally similar elements. The
drawing in which an element first appears is indicated by the
leftmost digit(s) in the corresponding reference number.
DETAILED DESCRIPTION OF THE INVENTION
[0029] I. Introduction
[0030] The following detailed description refers to the
accompanying drawings that illustrate example embodiments of the
present invention. However, the scope of the present invention is
not limited to these embodiments, but is instead defined by the
appended claims. Thus, embodiments beyond those shown in the
accompanying drawings, such as modified versions of the illustrated
embodiments, may nevertheless be encompassed by the present
invention.
[0031] References in the specification to "one embodiment," "an
embodiment," "an example embodiment," or the like, indicate that
the embodiment described may include a particular feature,
structure, or characteristic, but every embodiment may not
necessarily include the particular feature, structure, or
characteristic. Moreover, such phrases are not necessarily
referring to the same embodiment. Furthermore, when a particular
feature, structure, or characteristic is described in connection
with an embodiment, it is submitted that it is within the knowledge
of one skilled in the art to implement such feature, structure, or
characteristic in connection with other embodiments whether or not
explicitly described.
[0032] Furthermore, it should be understood that spatial
descriptions (e.g., "above," "below," "up," "left," "right,"
"down," "top," "bottom," "vertical," "horizontal," etc.) used
herein are for purposes of illustration only, and that practical
implementations of the structures described herein can be spatially
arranged in any orientation or manner.
[0033] Various approaches are described herein for, among other
things, cooling a chip using a flexural plate wave (FPW) device.
The cooling techniques described herein are applicable to any
suitable type of IC package, including but not limited to wafer
level chip scale packages (WLCSPs) and wafer level ball grid array
(WLBGA) packages. For example, packages that utilize the cooling
techniques described herein may be relatively easy to fabricate,
may dissipate heat more effectively than conventional packages,
and/or may provide a competitive advantage in technologies that
enable very small device features (e.g., 40 nm and lower
technologies). Such cooling techniques can also be used as a
system-level cooling solution where multiple chips are cooled using
one FPW device (or larger numbers of FPW devices). Such techniques
may be implemented in any type of commercially available and/or
proprietary devices/systems, including stationary devices (e.g.,
desktop computers, displays (e.g., computer monitors, televisions
such as flat panel displays, etc.), mobile devices (e.g., cell
phones, smart phones, handheld computers laptop computers,
netbooks, tablet computers, handheld music players, etc.), and
further types of devices. [0034] II. Example Chip Cooling
Embodiments
[0035] FIG. 1 depicts a conventional integrated circuit (IC)
package 100. As shown in FIG. 1, package 100 includes an IC die 102
that is coupled to a substrate 104 through electrically conductive
interconnect elements 106. Examples of a conductive interconnect
element 106 include but are not limited to a solder ball, a solder
bump, etc. During operation of die 102, heat 108 is produced in die
102. The junction temperature at a bottom surface 112 of die 102 is
represented as Tj. The junction temperature Tj represents a maximum
temperature of surface 112 of die 102 during operation.
Electrically conductive interconnect elements 106 may be configured
to conduct at least some of heat 108 from die 102 into substrate
104. For instance, heat 110 is shown in FIG. 1 to be conducted into
substrate 104. In one implementation, substrate 104 may be a
printed circuit board (PCB), or may be an intermediate substrate
that is coupled to a PCB through solder balls or other type of
interconnects. In accordance with this example, heat 110 may be
conducted through substrate 104 and the solder balls into the
PCB.
[0036] Package 100 may be subjected to high temperatures resulting
from heat 108. These high temperatures can impair the performance
of the circuits of die 102 and/or cause thermal stresses in package
100. Accordingly, a passive cooling device, such as heat sink, may
be coupled to die 102 to facilitate further conduction of heat 108
from die 102. However, the mere introduction of passive cooling
devices may not adequately dissipate heat 108 from die 102. An
active system cooling device, such as a fan, may be used to further
dissipate heat 108 from die 102 (e.g., into the air surrounding die
102). However, if package 100 is incorporated in a mobile handheld
device, or is used in other limited-space application, it typically
is not possible to use a system level cooling fan with regard to
package 100. A failure to adequately dissipate heat 108 from die
102 may negatively affect the performance and/or reliability of die
102.
[0037] In embodiments, a cooling device that incorporates
piezoelectric vibrating structures may be incorporated in package
100 to further dissipate heat 108 from die 102. In an embodiment,
the cooling device may be a separate device from die 102 that is
attached to die 102. In another embodiment, the cooling device may
be integrated with die 102 (e.g., a single-piece die-cooling device
combination). In an embodiment, the cooling device may include a
flexural plate wave (FPW) device on at least one surface of the
cooling device. The FPW device generates a stream of air (e.g., a
stream of the gas in the environment in which the cooling device is
located) that flows over the surface of the cooling device. The
stream of air aids in dissipating heat from the cooling device,
which includes at least a portion of heat 108 generated by die 102.
In this manner, dies 102 is cooled, which may enable the
performance and/or reliability of die 102 to be less negatively
affected, even entirely unaffected, by heat 108.
[0038] Such cooling devices may be implemented in various ways in
embodiments. For instance, FIGS. 2-5 depict IC packages that
implement cooling devices in accordance with embodiments. FIGS. 2-5
are described as follows.
[0039] FIG. 2 shows a package 200 mounted to a substrate 204,
according to an example embodiment. As shown in FIG. 2, package 200
includes a die 202, a plurality of electrically conductive
interconnect elements 206, a cooling device 214, support members
216A and 216B, and a plurality of flexural plate wave (FPW) devices
218. Substrate 204 may be any type of surface or substrate,
including a circuit board such as a printed circuit board, an
intermediate substrate such as a substrate in an integrated circuit
package (e.g., a ball grid array package substrate, etc.), or other
type of surface or substrate. Package 200 is described as
follows.
[0040] Die 202 has opposing first and second surfaces 224 and 212.
First surface 224 is a non-active surface of die 202, and second
surface 212 is an active surface of die 202. Die 202 may be formed
of various semiconductor materials, such as silicon, gallium
arsenide, or other type of semiconductor material. Die 202 may have
been separated (singulated) from a semiconductor wafer that
includes tens, hundreds, or even larger numbers of dies, and that
was processed according to photolithographic and/or other
techniques to form integrated circuitry in die 202 (and the other
dies) that is accessible at second surface 212.
[0041] Electrically conductive interconnect elements 206 are on
second surface 212 of die 202. Electrically conductive interconnect
elements 206 may be applied to second surface 212 in any manner.
Although shown in FIG. 2 as solder bumps/balls, electrically
conductive interconnect elements 206 may be another type of
electrically conductive interconnects, including posts, pads, etc.
Die 202 has a plurality of die terminals on second surface 212 of
die 202 that are I/O pads for signals of die 202. Electrically
conductive interconnect elements 206 may be coupled to respective
die terminals to at second surface 212 to conduct signals from die
202, or may not be coupled to die terminals of die 202, but may be
present to provide mechanical support/stability for mounting
package 200 to a substrate, to enable heat conduction from die 202
(e.g., may be thermal bumps/balls), and/or to provide other
function/purpose
[0042] In the example of FIG. 2, package 200 is coupled to
substrate 204 by electrically conductive interconnect elements 206.
During operation of die 202, heat 208 is produced in die 202.
Electrically conductive interconnect elements 206 may be configured
to conduct at least some of the heat 208 into substrate 204. For
instance, heat 210 is shown in FIG. 2 to be conducted into
substrate 204. A temperature of second surface 212 of die 202 at a
junction between die 202 and electrically conductive interconnect
elements 206 may be represented as the junction temperature Tj
(maximum die surface temperature).
[0043] In the embodiment of FIG. 2, cooling device 214 is coupled
to die 202 through support members 216A and 216B. As shown in FIG.
2, cooling device 214 includes opposing first and second surfaces
220 and 228. Cooling device 214 may be made of any suitable
material, including a semiconductor material, a metal (e.g.,
aluminum, copper, iron, tin, nickel, lead, silver, gold, etc.), a
combination of metals/alloy, a ceramic material, a polymer, or
other suitable material or combination of materials. Cooling device
214 is configured to be thermally conductive to transfer heat 208
from die 202 received through support members 216A and 216B to the
environment. For instance, cooling device 214 may be a heat
sink.
[0044] Support members 216A and 216B are coupled between first
surface 220 of cooling device 214 and first surface 224 of die 202.
Support members 216A and 216B mount cooling device 214 to die 202
and form a gap or channel 226 between die 202 and cooling device
214. Two support members 216A and 216B are shown in FIG. 2 for
illustrative purposes and this number is not intended to be
limiting. It will be recognized that any number of support members
216 may be used to couple cooling device 214 to die 202. For
instance, four support members 216A-216D may be present (with each
support member positioned near a corresponding corner of die 202 or
at other location), six support members 216A-216F may be present,
etc. Support members 216 may be made of any suitable material,
including a semiconductor material, a metal (e.g., aluminum,
copper, iron, tin, nickel, lead, silver, gold, etc.), a combination
of metals/alloy, a ceramic material, a polymer, or other suitable
material or combination of materials. Support members 216 may be
formed in any manner, including as posts, as build-up layers, etc.
Support members 216 may be attached to surfaces 220 and 224 in any
manner, including by solder, an adhesive material (e.g., a
thermally conductive adhesive material), or other material, and may
optionally be inserted in recesses/holes in one or both of surfaces
220 and 224. Support members 216 may have any shape, including
having circular or rectangular cross-sections.
[0045] The region between first surface 220 of cooling device 214
and first surface 224 of die 202 may be referred to as channel 226.
Channel 226 has a spacing, gap distance, or height defined by a
height (length) of support members 216A and 216B. FPW devices 218
(also referred to as piezoelectric vibrating structures or FPW
pumps) are coupled to first surface 220 of cooling device 214. Each
of the FPW devices 218 is configured to generate a respective
traveling wave. The traveling waves act to pump air 222 through
channel 226 along surface 220 of cooling device 214 and surface 224
of die 202. The streaming of air 222 along surface 224 of die 202
acts to dissipate at least some of heat 208 that is produced during
the operation of die 202 by flowing air along surface 224 of die
202 to receive some of heat 208 in air 222. For instance, the
junction temperature Tj that is described with respect to FIG. 2
may be less than the junction temperature Tj described with respect
to FIG. 1 due to the flow of air 222 through channel 226 caused by
the traveling waves of FPW devices 218.
[0046] Although a plurality of FPW devices 218 are shown on first
surface 220 of die 202 in FIG. 2, any number of one or more FPW
devices 218 may be present on first surface 2214 of die 202.
Furthermore, although FPW devices 218 are shown located on surface
220 of cooling device 214 in FIG. 2, in embodiments, FPW devices
218 may be present on alternative and/or additional surfaces of
cooling device 214, including second surface 228 and/or one or more
side surfaces of cooling device 214. Furthermore, one or more FPW
devices 218 may additionally be present on one or more surfaces of
die 202, including second surface 212 and/or one or more side
surfaces of die 202.
[0047] FIG. 3 shows a package 300 mounted to substrate 204,
according to another example embodiment. As shown in FIG. 3,
package 300 includes die 202, electrically conductive interconnect
elements 206, cooling device 214, and FPW devices 218. Package 300
is similar to package 200 of FIG. 2, with differences described as
follows.
[0048] As shown in FIG. 3, second surface 228 of cooling device 214
is directly coupled to first surface 224 of die 202. Support
members 216 of FIG. 2 are not present, and thus channel 226 is not
present. Second surface 228 of cooling device 214 may be coupled
directly to first surface 224 of die 202 using an adhesive material
(e.g., a thermally conductive adhesive material that includes a
thermally conductive material, such as a metal such as silver,
etc.) as shown in FIG. 3, or may be indirectly coupled to surface
224 of die 202 (e.g., through an intermediate heat sink). FPW
devices 218 are coupled to first surface 220 of cooling device 214,
which faces away from die 202 in the embodiment of FIG. 3. Each of
the FPW devices 218 is configured to generate a respective
traveling wave. The traveling waves act to pump air 322 along
surface 220 of cooling device 214. The streaming of air 322 along
surface 220 of cooling device 214 acts to dissipate at least some
of heat 208 that is produced during the operation of die 202. For
example, cooling device 214 may conduct at least some of heat 208
from die 202 through cooling device 214 toward surface 220 to be
dissipated into air 322.
[0049] FIG. 4 shows a package 400 mounted to substrate 204,
according to another example embodiment. As shown in FIG. 4,
package 400 includes die 202, electrically conductive interconnect
elements 206, and FPW devices 218. Package 400 is similar to
package 200 of FIG. 2, with differences described as follows.
[0050] As shown in FIG. 4, FPW devices 218 are on a top surface 224
of a die 202. As such, in the embodiment of FIG. 4, a one-piece
cooling device/die (die 202) is present, and a separate cooling
device 214 and support members 216A and 216B are not present. As
described above, FPW devices 218 are configured to generate
respective traveling waves, which collaboratively pump air 422
along surface 224 of die 202. The streaming of air 422 along first
surface 224 of die 202 acts to dissipate at least some of heat 208
from die 202 that is produced during the operation of die 202.
[0051] FIG. 5 shows a package 500 mounted to substrate 204,
according to another example embodiment. As shown in FIG. 5,
package 500 includes die 202, electrically conductive interconnect
elements 206, cooling device 214, support members 216A and 216B,
and FPW devices 218. Package 500 is similar to package 200 of FIG.
2, with differences described as follows.
[0052] As shown in FIG. 5, cooling device 214 is coupled to die 202
by support members 216A and 216B in a similar fashion as described
above with respect to FIG. 2. FPW devices 218 are on first surface
220 of cooling device 214. Furthermore, second surface 228 of
cooling device 214 includes a centrally-located recessed region
530, rather than second surface 228 being completely planar as
shown in FIG. 2. As a result, recessed region 530 forms an air
cavity 532 in cooling device 214. Recessed region 530 is shown to
have the shape of an isosceles trapezoid in FIG. 5 for illustrative
purposes, but is not intended to be limited to this shape. It will
be recognized that recessed region 530 may have any suitable shape
or combination of shapes, whether regular or irregular, including
being rectangular, elliptical, rounded, or other polygonal shape.
Furthermore, although a single recessed region 530 is shown in FIG.
5, any number of one or more recessed regions 530 may be present in
second surface 228, as well as any number of other features,
including slots, openings, fins, etc.
[0053] As described above, FPW devices 218 are configured to
generate respective traveling waves, which collaboratively pump air
522 along surface 224 of die 202 and surface 220 of cooling device
214 through channel 226 formed between cooling device 214 and die
202. The streaming of air 522 along through channel 226 and along
surfaces 220 and 224 acts to dissipate at least some of heat 208
that is produced during the operation of die 202 from die 202 and
cooling device 214. Furthermore, the inclusion of recessed region
530 in second surface 228 increases a surface area of second
surface 228 of cooling device 214. For example, the increased
surface area of surface 228 in FIG. 5 may further facilitate the
dissipation of heat from cooling device 214, and thereby from
package 500.
[0054] As described above, cooling device 214 may be made of a
variety of materials, and may be thermally conductive. FIG. 6 shows
a perspective view of an example cooling device 600, according to
an embodiment. Cooling device 600 is an example of cooling device
204. As shown in FIG. 6, cooling device 600 includes a body 602
having opposing first and second surfaces 604 and 606 (second
surface 606 is not visible in FIG. 6). First surface 604 includes a
FPW region 608, which may extend to one or more of the edges of
first surface 604, and in which one or more FPW devices (e.g., FPW
devices 218 of FIGS. 2-5) may be positioned. The FPW devices are
configured to generate a stream of air to flow at least across
cooling device 600 to cool an integrated circuit (IC) during
operation of the integrated circuit (IC). For instance, in an
embodiment (e.g., FIGS. 2, 3, and 5) cooling device 600 may be
coupled to an IC die (e.g., IC die 202) that includes the
integrated circuit. In another embodiment, (e.g., FIG. 4) cooling
device 600 may include the integrated circuit (e.g., die 202).
[0055] As shown in FIG. 6, cooling device 600 may have a
rectangular shape (e.g., square). In other embodiments, cooling
device 600 may have other shape, regular or irregular, including
being elliptical (e.g., circular), oval, triangular, or other
polygonal shape. Furthermore, surfaces 604 and 606 may be
completely planar, as shown in FIG. 6, or may include one or more
recesses (e.g., holes, depressions, slots, grooves, etc.).
[0056] Electrical devices that include IC packages with cooling
devices may function in various ways to dissipate heat, in
embodiments. For instance, FIG. 7 shows a flowchart 700 providing
an example process for cooling an electrical device, according to
an embodiment. Flowchart 700 is described with respect to FIG. 8
for purposes of illustration. FIG. 8 shows a block diagram view of
a surface 802 of an electrical device 800 having a cooling
mechanism formed thereon, according to an example embodiment.
Electrical device 800 is an example of packages 200, 300, 400, and
500, and of other type of electrical devices enabled for cooling
according to embodiments described herein. Other structural and
operational embodiments will be apparent to persons skilled in the
relevant art(s) based on the discussion provided herein. Flowchart
700 and electrical device 800 are described as follows.
[0057] Referring to flowchart 700, in step 702, an integrated
circuit (IC) of an electrical device is operated that generates
heat during operation. For example, referring to FIG. 8, electrical
device 800 may include an integrated circuit that generates heat
during operation, as described herein. For instance, surface 802
may be a surface of an integrated circuit die of electrical device
800, which has an integrated circuit incorporated therein (e.g.,
see package 400 of FIG. 4). In another example, surface 802 may be
a surface of a cooling device that is separate from and attached to
an integrated circuit die (e.g., see packages 200, 300, and 500 of
FIGS. 2, 3, and 5, respectively). As described above, the
integrated circuit of the die may generate heat (e.g., heat 208)
during operation.
[0058] In step 704, a stream of air is generated with a flexural
plate wave device of the electrical device to dissipate at least a
portion of the heat generated by the IC die. For example, as shown
in FIG. 8, surface 802 of electrical device 800 has a FPW device
804 present thereon. FPW device 804 is an example of one of FPW
devices 218 described above. Although a single FPW device 804 is
shown in FIG. 8, any number of FPW devices 804 may be present on
surface 802. As shown in FIG. 8, FPW device 804 includes a wave
generator 806, a wave absorber 808, and a diaphragm 810.
[0059] In an embodiment, FPW device 804 is configured to generate a
stream of air (e.g., air 222, 322, 422, 522 of FIGS. 2-5,
respectively) to dissipate at least a portion of the heat generated
by an integrated circuit of electrical device 800. For instance,
FPW device 804 may perform step 704 of flowchart 700 according to
FIG. 9. FIG. 9 shows a flowchart 900 providing a process for
generating a stream of air to cool an electrical device, according
to an example embodiment. Other structural and operational
embodiments will be apparent to persons skilled in the relevant
art(s) based on the discussion provided herein. Flowchart 900 is
described as follows.
[0060] Referring to flowchart 900, in step 902, an acoustic wave is
generated that travels through the piezoelectric material that
causes the stream of air to flow across the electrical device. For
example, referring to FIG. 8, wave generator 806 may be configured
to generate an acoustic wave 812 that travels through diaphragm
810. Acoustic wave 812 may cause the stream of air to flow across
surface 802 of electrical device 800 to dissipate heat from
electrical device 800. For instance, in an embodiment, diaphragm
810 may be made from a piezoelectric material. Wave generator 806
may generate an electric field in which diaphragm 810 is located.
The electric field may cause a mechanical deformation in the
piezoelectric material of diaphragm 810 in the form of acoustic
wave 812. For instance, the electric field generated by wave
generator 806 may be oscillating to cause the piezoelectric
material to vibrate to generate acoustic wave 812 to flow through
diaphragm 810. Acoustic wave 812 may be generated to produce
traveling waves in diaphragm 810 that flow in a predetermined
direction (e.g., from wave generator 806 toward wave absorber 808).
Air adjacent to surface 802 is caused to flow or stream in the
predetermined direction due to friction between the air and
acoustic wave 812 traveling through diaphragm 810.
[0061] In step 904, the acoustic wave is absorbed to prevent the
acoustic wave from reflecting. Step 904 is optional. For example,
in an embodiment, wave absorber 808 of FIG. 8 may be configured to
perform step 904, and is optionally present. Wave absorber 808 may
be configured to absorb acoustic wave 812 generated by wave
generator 806 so that acoustic wave 812 does not reflect from an
end of diaphragm 810 to return back through the piezoelectric
material of diaphragm 810 towards wave generator 806. If acoustic
wave 812 is allowed to reflect back towards wave generator 806,
acoustic wave 812 may create standing waves in diaphragm 810 due to
the superposition of the source wave and wave reflections. Such
standing waves would not effectively generate a stream of air, and
instead may generate vortexes as described herein.
[0062] FPW device 804 may be formed and configured in various ways
to perform flowcharts 700 and 900, as described above. Various
techniques, including micromachining techniques, photolithography,
chemical vapor deposition (CVD), vacuum deposition, and/or other
techniques may be used to form FPW device 804. FIG. 10 shows a side
cross-sectional view of an example configuration of an FPW device
1000 in accordance with an embodiment. FPW device 1000 is an
example of FPW device 804. FIG. 11 shows a surface view of FPW
device 1000 of FIG. 10, according to an example embodiment. As
shown in FIG. 10, FPW device 100 includes a base layer 1002, a
support layer 1004, a diaphragm layer 1006, a dielectric layer
1008, a piezoelectric material layer 1110, a wave generator 1014, a
wave absorber 1016, a first input bond pad 1012a, and a first
output bond pad 1018a. FPW device 1000 is described as follows.
[0063] Base layer 1002 may be considered to be part of FPW device
1000, or may be considered to be separate from FPW device 1000. For
example, in one embodiment, base layer 1002 may be a layer formed
on a body (e.g., body 602 of FIG. 6) of a cooling device as a first
layer of FPW device 1000. In another embodiment, base layer 1002
may be an existing layer of the body of the cooling device or the
entirety of the body of cooling device (when the cooling device is
single-layer). Base layer 1002 may be formed from one or more
materials, including a semiconductor material (e.g., silicon,
gallium arsenide, etc.), a metal (e.g., aluminum, copper, iron,
tin, nickel, lead, silver, gold, etc.), a combination of
metals/alloy, a ceramic material, a polymer, or other suitable
material or combination of materials.
[0064] As shown in FIG. 10, support layer 1004 coupled to (e.g.,
attached to or formed on, directly, or indirectly through one or
more further layers) base layer 1002. Furthermore, as shown in FIG.
10, support layer 1004 is a planar layer that includes a centrally
located opening 1024. Diaphragm layer 1006 is coupled to (e.g.,
attached to or formed on, directly, or indirectly through one or
more further layers) support layer 1004. In the example of FIG. 10,
diaphragm layer 1006 is a planar solid layer. Support layer 1004 is
configured to support diaphragm layer 1006. As shown in FIG. 10,
opening 1024 in support layer 1004 forms an air gap 1020 between
base layer 1002 and diaphragm layer 1006, which may enable enhanced
flexing of diaphragm layer 1006. Support layer 1004 and diaphragm
layer 1006 may each be formed from one or more materials, including
a semiconductor material (e.g., silicon, gallium arsenide, a metal
(e.g., aluminum, copper, iron, tin, nickel, lead, silver, gold,
etc.), a combination of metals/alloy, a ceramic material, a
polymer, or other suitable material or combination of
materials.
[0065] Dielectric layer 1008 is optionally present. When present,
dielectric layer 1008 is coupled to (e.g., attached to or formed
on, directly, or indirectly through one or more further layers)
diaphragm layer 1006. Dielectric layer 1008 may be formed from one
or more electrically insulating layers, including a polymer, a
ceramic (e.g., silicon nitride), or other suitable material or
combination of materials.
[0066] Piezoelectric material layer 1010 is coupled to (e.g.,
attached to or formed on, directly, or indirectly through one or
more further layers) dielectric layer 1008. Piezoelectric material
layer 1010 may be formed from one or more piezoelectric materials.
Example piezoelectric materials for piezoelectric material layer
1010 include aluminum nitride (AlN), zinc oxide (ZnO), etc.
[0067] As shown in FIG. 10, wave generator 1014 is formed on (e.g.,
in contact with) piezoelectric material layer 1010. Wave generator
1014 generates an acoustic wave (acoustic wave 1134 in FIG. 11)
that travels through piezoelectric material layer 1010, causing
piezoelectric material layer 1010 to vibrate and to cause diaphragm
layer 1006 to vibrate, causing a stream of air to flow across
surface 1022 of FPW device 1000 in FIG. 10 in a direction 1026
(from wave generator 1014 on a first position of piezoelectric
material layer 1010 towards wave absorber 1016 on a second position
of piezoelectric material layer 1010). Wave absorber 1016 is formed
on piezoelectric material layer 1010. When present, wave absorber
1016 is configured to receive and absorb the acoustic wave to
prevent the acoustic wave from reflecting back through
piezoelectric material layer 1010 (e.g., from reflecting from a
right edge of piezoelectric material layer 1010 in FIG. 10, in a
direction opposite to direction 1026).
[0068] Although a particular configuration for FPW device 1000 is
shown in FIG. 10,
[0069] FPW device 1000 may include any number of layers, including
additional, fewer, and/or alternative layers, to implement its
functions. Furthermore, the layers of FPW device 1000 may be formed
any suitable combination of materials. In one example embodiment,
base layer 1002 is made of silicon, support layer 1004 and
diaphragm layer 1006 are made of polysilicon, dielectric layer 1008
is made of silicon nitride, and piezoelectric material layer 1110
is made of aluminum nitride.
[0070] Wave generator 1014 and wave absorber 1016 may be configured
in various ways to perform their respective functions. For
instance, as shown in FIG. 11, wave generator 1014 may include a
first comb-shaped electrically conductive feature 1104 and a second
comb-shaped electrically conductive feature 1106 formed on
piezoelectric material layer 1010. First and second comb-shaped
electrically conductive feature 1104 and 1106 are electrically
isolated from each other, and are interlocked with each other. As
shown in FIG. 11, first comb-shaped electrically conductive feature
1104 includes a base feature 1112 (e.g., an electrical conductor or
trace) and a pair of fingers 1114 that extend in a same direction
in parallel from base feature 1112, and second comb-shaped
electrically conductive feature 1106 includes a base feature 1116
and a pair of fingers 1118 that extend in a same direction in
parallel from base feature 1116, in an opposite direction from
fingers 1114. Fingers 1114 interlock (e.g., are inter-digitated)
with fingers 1118 and are separated by a gap from fingers 1118 on
piezoelectric material layer 1010.
[0071] A first input bond pad 1012a is coupled to base feature
1112, and a second input bond pad 1012b is coupled to base feature
1116. An oscillating voltage source 1102 is coupled to first and
second input bond pads 1012a and 1012b such that a first
oscillating signal 1128 is coupled to first comb-shaped
electrically conductive feature 1104, and a second oscillating
signal 1130 is coupled to second comb-shaped electrically
conductive feature 1106. Oscillating voltage source 1102 generates
first and second oscillating signals 1128 and 1130 to generate an
electric field with first and second comb-shaped electrically
conductive features 1104 and 1106. The electric field causes
piezoelectric material layer 1010 to vibrate to form an acoustic
wave 1134 in piezoelectric material layer 1010, dielectric layer
1008, and diaphragm layer 1006 that travels in the direction of
direction 1026.
[0072] For instance, oscillating voltage source 1102 may generate
first and second oscillating signals 1128 and 1130 to be out of
phase (e.g., opposite phase or 180 degrees out of phase) to
generate the electric field to be oscillating. The oscillating
electric field may cause piezoelectric material layer 1010 to
vibrate to generate acoustic waves 1134 as Rayleigh waves, as are
known to persons skilled in the relevant art(s). A velocity of
Rayleigh waves depends on factors that include the type of
piezoelectric material of piezoelectric material layer 1010. If
zinc oxide is used as the piezoelectric material, the Rayleigh
velocity is about 4 times lower. Hence, with zinc oxide, the
frequency of oscillation is also 4 times lower for a same
inter-digitated finger spacing of wave generator 1014. When the
piezoelectric material is selected, a basic pumping velocity (speed
of wave propagation through diaphragm layer 1006) is thereby
selected. The actual pumping velocity is then the function of the
height of channel 226 (when a channel is present), the amplitude of
the acoustic wave (for transfer effect), and a velocity profile
across the channel (a function of the air being pumped), as would
be known to persons skilled in the relevant art(s) from the
teachings herein.
[0073] In one embodiment, the Rayleigh wave velocity for the
piezoelectric material of piezoelectric material layer 1010 may be
used to determine a frequency of oscillating signals 1128 and 1130.
Equation 1 shown below indicates a relationship between the
Rayleigh wave velocity (C.sub.R), wavelength (.lamda.), and
oscillating voltage frequency (f):
C.sub.R=.lamda..times.f Equation 1
FIG. 12 shows a view of wave generator 1014 of FIG. 11 to
illustrate configuring of wavelength .lamda., according to an
example embodiment. As shown in FIG. 12, wavelength .lamda. is
equal to 2.times.distance d, where distance d is a spacing between
adjacent interlocked fingers (on different comb-shaped electrically
conductive features), and as such, wavelength .lamda. is equal to
the distance between adjacent fingers on a same comb-shaped
electrically conductive feature. Once finger spacing is configured,
and wavelength .lamda. is thereby determined, frequency f for
oscillating signals 1128 and 1130 of FIG. 11 may be determined
according to Equation 1 (e.g., f==C.sub.R/.lamda.). Oscillating
signals 1128 and 1130 may be generated by oscillating voltage
source 1102 at the determined frequency f as square wave signals
(as shown in FIG. 11) or signals having other signal shape.
[0074] For instance, if wavelength .lamda. is 0.00001 meters, and
the Rayleigh wave velocity is 10.4 km/sec (e.g., for AlN
piezoelectric material in a particular configuration), frequency f
may be determined to be 10.4 km/sec/0.00001 meters=1040 MHz. Thus,
for a spacing of d=0.000005 meters, and a piezoelectric material of
AlN, oscillating signals 1128 and 1130 may be generated to have
frequencies of 1040 MHz.
[0075] Note that the amplitude of the vibration of piezoelectric
material layer 1010 and diaphragm layer 1006 may be selected based
on various factors. For instance, FIG. 13 shows a graph 1300 that
includes frequency response plots of displacement amplitude versus
frequency for a diaphragm of a FPW device in accordance with an
example embodiment. For instance, graph 1300 shows a plot 1302 that
indicates that a displacement amplitude for a diaphragm (e.g.,
diaphragm layer 1006) rises from a first level at a vibration
frequency of zero to maximum amplitude at a resonant vibration
frequency for the diaphragm. As the vibration frequency increases
from the resonant frequency, the displacement amplitude for the
diaphragm decreases. Furthermore, FIG. 13 indicates that as the
amplitude of the voltage wave (e.g., the amplitudes of first and
second oscillating signals 1128 and 1130) increases, the entire
waveform of plot 1302 is shifted higher (e.g., displacement
amplitude of the diaphragm increases with increasing voltage
wave).
[0076] Note that the piezoelectric efficiency of conversion of
voltage to vibration depends on these and various other factors,
including the type of piezoelectric material, a crystallographic
orientation of the crystals of the piezoelectric material, and a
quality of the piezoelectric films.
[0077] Referring back to FIG. 11, when present, wave absorber 1016
may include a first comb-shaped electrically conductive feature
1108 and a second comb-shaped electrically conductive feature 1110
formed on piezoelectric material layer 1010. In the example of FIG.
11, first and second comb-shaped electrically conductive features
1108 and 1110 are electrically isolated from each other, and are
interlocked with each other. As shown in FIG. 11, first comb-shaped
electrically conductive feature 1108 includes a base feature 1120
and a pair of fingers 1122 that extend in a same direction in
parallel from base feature 1120, and second comb-shaped
electrically conductive feature 1110 includes a base feature 1124
and a pair of fingers 1126 that extend in a same direction in
parallel from base feature 1124, in an opposite direction from
fingers 1122. Fingers 1122 interlock (e.g., are inter-digitated)
with fingers 1126 and are separated by a gap from fingers 1126 on
piezoelectric material layer 1010. A first output bond pad 1018a is
coupled to base feature 1120, and a second output bond pad 1018b is
coupled to base feature 1124. Output bond pads 1018a and 1018b are
optional, and a characteristic frequency electrical output may be
measured across output bond pad 1018a and 1018b.
[0078] Wave absorber 1016 is configured to at least reduce a
reflection of acoustic waves 1134 through piezoelectric material
layer 1010 (and diaphragm layer 1006 of FIG. 10). As described
above, in FIG. 11, first and second comb-shaped electrically
conductive features 1108 and 1110 are electrically isolated from
each other. In another embodiment, first and second comb-shaped
electrically conductive features 1108 and 1110 may be electrically
coupled to each other. In this manner, wave absorber 1016 may
better absorb acoustic waves 1134 (e.g., form a better termination)
to reduce/prevent reflections, and thereby reduce/prevent standing
waves.
[0079] For example, FIG. 14 shows a surface view of a FPW device
1400, according to an example embodiment. FPW device 1400 is the
same as FPW device 1000 of FIG. 11, except that first and second
output bond pads 1018a and 1018b are electrically coupled together
by an electrical conductor (e.g., a trace) 1402. Furthermore, in an
embodiment, first and second output bond pads 1018a and 1018b may
be coupled to a ground signal. In this manner, acoustic wave 1134
is more fully or even completely absorbed by wave absorber 1016,
preventing reflections of acoustic wave 1134, and enabling acoustic
wave 1134 to perform as a traveling wave in piezoelectric material
1010 and diaphragm layer 1006 rather than causing a standing
wave.
[0080] Note that other configurations for wave generator 1014 and
wave absorber 1016 than shown in FIGS. 10-12 and 14 are also
applicable to embodiments. Each of first comb-shaped electrically
conductive feature 1104, second comb-shaped electrically conductive
feature 1106, first input bond pad 1012a, second input bond pad
1012b, first comb-shaped electrically conductive feature 1108,
second comb-shaped electrically conductive feature 1110, first
output bond pad 1018a, second output bond pad 1018b, and conductor
1402, when present, may each include any number of layers, and may
be made of any suitable electrically conductive material, including
a metal (e.g., aluminum, copper, iron, tin, nickel, lead, silver,
gold, etc.), a combination of metals/alloy (e.g., solder, etc.),
and/or one or more other electrically conductive materials.
Although pairs of fingers (fingers 1114, 1118, 1122, and 1126) are
shown in FIGS. 11 and 14, any number of fingers may be present in
each comb-shaped electrically conductive feature, including 3
fingers, 4 fingers, etc. Oscillating voltage source 1102 may be any
suitable voltage source that is either separate from a cooling
device that includes FPW device 1000/1400, or is associated with or
integrated in the cooling device (e.g., incorporated in an
integrated circuit die such as die 202, etc.). First and second
oscillating signals 1128 and 1130 of oscillating voltage source
1102 may be coupled to input bond pads 1018a and 1018b by any
suitable mechanism, including any combination of bond wires,
routing, vias, support members, interconnects, etc.
[0081] According to embodiments, acoustic streaming is air flow
caused by high frequency travelling waves. Acoustic streaming is
caused by friction between the medium (e.g., the air) and the
vibrating wall (e.g., a diaphragm that vibrates due to one or more
FPW devices). Acoustic streaming creates a flow pattern that
includes the following effects: (a) convective heat transfer
enhancement (vortex type air-flow effect), and (b) an increase in
flow velocity (pumping effect). With regard to the pumping effect,
a flow rate of air in the vicinity of the vibrating diaphragm is
directly proportional to the velocity of the travelling wave. The
higher the velocity, the greater is the pumping of air. The actual
flow-rate depends on a mean velocity in the channel.
[0082] FIGS. 15A and 15B illustrate a pumping effect and a vortex
effect that are generated by a cooling device due to acoustic
streaming, and that are superimposed on each other, according to
embodiment. For example, the pumping effect and the vortex effect
each may be produced as a result of traveling waves being produced
by FPW devices, such as FPW devices 218 shown in FIGS. 2-5.
[0083] FIG. 15A shows a channel configuration 1500 that illustrates
the pumping effect, according to an example embodiment. As shown in
FIG. 15A, channel configuration 1500 includes a channel cap 1502
and an FPW device 1504 that are separated by a channel 1506 (e.g.,
similarly to FIGS. 2 and 5). A pumping velocity is indicated by
arrows 1510, and acoustic pressure fronts 1508 are also shown.
Furthermore, a flow profile 1512 is shown, which illustrates higher
channel flow velocities closer to FPW device 1504, and lower
channel flow velocities closer to channel cap 1502. Further
information regarding acoustic pumping in micromachined flow
systems is described in Bradley et al., "Flow Measurements in a
Micromachined Flow System with Integrated Acoustic Pumping,"
Proceedings: IEEE Ultrasonics Symposium, Vol. 1, (1995), which is
incorporated by reference herein in its entirety.
[0084] FIG. 15B shows a channel configuration 1520 that illustrates
the vortex effect. For example, the vortex effect shown in FIG. 15B
may occur in a same channel configuration as shown in FIG. 15A,
superimposed on the illustrated pumping effect. As shown in FIG.
15B, channel configuration 1520 includes a channel cap (or plate)
1522 and an ultrasonic flexural standing wave 1528 (in a diaphragm
of an FPW device). As shown in FIG. 15B, flexural standing wave
1528 has a plurality of nodes 1530, where the standing wave
amplitude is zero, and an antinode between each pair of nodes 1530,
where the standing wave amplitude is maximal. A plurality of
vortexes 1524 are generated in the channel between channel cap 1522
and ultrasonic flexural standing wave 1528. A streaming velocity
1526 indicating air flow from between vortexes that flow in
opposite circular directions is shown in FIG. 15B. Air flow
indicated according to streaming velocity 1526 rises at antinodes
and descends toward nodes 1530 from the channel. Information
regarding convective heat transfer due to acoustic streaming with
regard to a vibrating beam (aluminum) is described in Loh et al.,
"Acoustic Streaming Induced by Ultrasonic Flexural Vibrations and
Associated Enhancement of Convective Heat Transfer," J. Acoust.
Soc. Am., Vol. 111 No. 2, February 2002, pages 875-883, Acoustical
Society of America (hereinafter "Loh"), which is incorporated by
reference herein in its entirety.
[0085] FIG. 16 shows a graph 1600 that includes plots of maximum
streaming velocity versus vibration frequency for an FPW device
implemented in a channel configuration (e.g., as in FIGS. 2 and 5),
according to an example embodiment. Graph 1600 includes three plots
1602 (circular identifiers), 1604 (square identifiers), and 1606
(triangular identifiers) of maximum streaming velocity measured at
a location in the channel (e.g., channel 226) near the diaphragm
surface (e.g., surface 220 in FIG. 2), measured at a location in
the channel near the surface of channel that opposes the diaphragm
surface (e.g., surface 224 in FIG. 2), and calculated using a
mathematical model for a location in the channel, respectively. The
maximum streaming velocity refers to a maximum velocity at which
air flows as a result of traveling waves being produced by FPW
devices in a package. The vibration frequency refers to a frequency
that is associated with the traveling waves. Graph 1600 indicates
that the maximum streaming velocity is greatest for locations near
the diaphragm surface (plot 1602), while being least when
calculated based on the mathematical model (plot 1606).
Furthermore, graph 1600 indicates that as vibration frequency
increases, maximum streaming velocity decreases. Refer to Loh,
pages 880-881, for further description regarding maximum acoustic
streaming velocity for constant vibration velocity for a vibrating
beam adjacent to a stationary beam.
[0086] FIG. 17 shows a graph 1700 that includes plots of maximum
streaming velocity versus vibration amplitude for an FPW device
implemented in a channel configuration, according to an example
embodiment. Graph 1700 includes three plots 1702 (circular
identifiers), 1704 (square identifiers), and 1706 (triangular
identifiers) of maximum streaming velocity measured at a location
in the channel near the diaphragm surface, measured at a location
in the channel near the surface of channel that opposes the
diaphragm surface, and calculated using a mathematical model for a
location in the channel, respectively. The maximum streaming
velocity refers to a maximum velocity at which air flows as a
result of traveling waves being produced by FPW devices in a
package. The vibration amplitude refers to an amplitude of the
traveling waves. For example, the amplitude may be an average
amplitude of the traveling waves or a mean amplitude of the
traveling waves, though the scope of the example embodiments is not
limited in this respect. Graph 1700 indicates that the maximum
streaming velocity is greatest for locations near the diaphragm
surface (plot 1702), while being least when calculated based on the
mathematical model (plot 1706). Furthermore, graph 1700 indicates
that as vibration amplitude increases, maximum streaming velocity
increases. Refer to Loh, page 881, for further description
regarding maximum acoustic streaming velocity for different
vibration amplitude for a vibrating beam adjacent to a stationary
beam.
[0087] FIG. 18 shows a graph 1800 that includes plots of maximum
streaming velocity versus a gap distance between the opposing
channel surfaces (e.g., surfaces 220 and 224 in FIG. 2) of a FPW
device implemented in a channel configuration, according to example
embodiments. Graph 1800 includes three plots 1802 (circular
identifiers), 1804 (square identifiers), and 1806 (triangular
identifiers) of maximum streaming velocity measured at a location
in the channel near the diaphragm surface, measured at a location
in the channel near the surface of channel that opposes the
diaphragm surface, and calculated using a mathematical model for a
location in the channel, respectively. The maximum streaming
velocity refers to a maximum velocity at which air flows as a
result of traveling waves being produced by the FPW device. Graph
1800 indicates that the maximum streaming velocity is greatest for
locations near the diaphragm surface (plot 1802), while being least
when calculated based on the mathematical model (plot 1806).
Furthermore, graph 1800 indicates that as the gap distance
increases, maximum streaming velocity decreases. Refer to Loh, page
881, for further description regarding maximum acoustic streaming
velocity for different gap size for a vibrating beam adjacent to a
stationary beam.
[0088] FIG. 19 shows a graph 1900 that includes a plot 1902 of die
temperature versus time, according to an example embodiment. FIG.
19 illustrates an effect of vortex generation on a temperature of a
die. In graph 1900, time is represented along an X-axis and
temperature is represented along a Y-axis. The time along the
X-axis is depicted in 0.5 minute increments from zero minutes to
five minutes. The temperature along the Y-axis is depicted in
5.degree. C. increments from 65.degree. C. to 100.degree. C. Plot
1900 includes a plot 1902 for which temperature is shown to
decrease exponentially from approximately 97.degree. C. at a time
of zero minutes to approximately 68.degree. C. at a time of five
minutes. For instance, at time 0.0, where there is no vortex yet
established by a FPW device, the temperature is maximum (e.g.,
97.degree. C.). At time 5.0 minutes, after the vortex effect (e.g.,
a 21 KHz vortex) has been established for several minutes, the
temperature has decreased to a lower steady state temperature
(e.g., 68.degree. C.).
[0089] FIG. 20 shows a graph 2000 that includes plots of
junction-to-ambient thermal resistances (.THETA.JA) with respect to
a wave travel velocity in accordance with an embodiment.
Junction-to-ambient thermal resistance .THETA.JA may be determined
according to Equation 2 shown below:
.THETA.JA=(TJ-TA)/device power Equation 2
where [0090] TJ=junction temperature, [0091] TA=ambient
temperature, and [0092] device power=die active surface power.
Graph 2000 includes plots 2002 and 2004. Plot 2002 represents
junction-to-ambient thermal resistances for an electrical device
that does not include a cooling device or FPW devices. As depicted
by plot 2002, the junction-to-ambient thermal resistance for an
electronic device that does not include a cooling device/FPW device
remains substantially constant at approximately 100% for wave
travel velocities from 0 m/s to 100 m/s. Plot 2004 represents
junction-to-ambient thermal resistances for an electrical device
that does include a cooling device and FPW device. As depicted by
plot 2004, the junction-to-ambient thermal resistance for an
electrical device that does include a cooling device and FPW
devices decreases from approximately 96.8% at a wave travel
velocity of approximately 0 m/s to approximately 67.9% at a wave
travel velocity of approximately 100 m/s. The slope of plot 2004 is
more negative between wave travel velocities of 0 m/s to
approximately 20 m/s than between wave travel velocities of
approximately 20 m/s to 100 m/s. The slope of plot 2004 is shown to
be substantially linear between wave travel velocities of
approximately 20 m/s to 100 m/s. Accordingly, cooling devices with
FPW devices offer substantial reductions in junction-to-ambient
(die-to-ambient) thermal resistance for electrical devices,
particularly as wave travel velocity is increased for an FPW
device.
[0093] FIGS. 21 and 22 show thermal modeling images of die surfaces
that illustrate cooling provided by embodiments. Modeling details
associated with FIGS. 21 and 22 include a die utilized power of 1.5
Watts, an ambient temperature of 70.degree. C., and a JEDEC
standard Zero Airflow enclosure. For instance, FIG. 21 shows a
modeled temperature distribution 2100 for an IC die that does not
include a FPW device, according to an example embodiment. As
indicated by temperature distribution 2100 shown in FIG. 21, the
un-cooled die surface has a hot spot of 121.9.degree. C., and the
die surface temperature decreases as distance increases from the
hot spot to a temperature of approximately 110.degree. C.
[0094] FIG. 22 shows a modeled temperature distribution for an IC
die that includes a cooling device, according to an example
embodiment. As indicated by temperature distribution 2200 shown in
FIG. 22, the hot spot for the cooled die surface has been reduced
in temperature relative to FIGS. 21 to 121.9.degree. C. (for a wave
velocity of 100 m/sec), and the die surface temperature decreases
as distance increases from the hot spot to a temperature of
approximately 94.degree. C.
EXAMPLE EMBODIMENTS
[0095] In an embodiment, an electrical device includes an
integrated circuit die (IC) having opposing first and second
surfaces, a plurality of interconnects on the second surface of the
IC die that enable the IC die to be coupled to a substrate, and a
flexural plate wave device configured to generate a stream of air
to flow across the electrical device to cool the IC die during
operation of the IC die.
[0096] The flexural plate wave device may be on the first surface
of the IC die.
[0097] The electrical device may further include a cooling device
having opposing first and second surfaces, wherein the cooling
device is coupled to the IC die, and the flexural plate wave device
is on the first surface of the cooling device.
[0098] The electrical device may further include a plurality of
support members coupled between the first surface of the cooling
device and the first surface of the IC die that mount the cooling
device to the IC die and form a channel between the IC die and the
cooling device, wherein the stream of air generated by the flexural
plate wave device flows through the channel.
[0099] The second surface of the cooling device may have a recessed
region.
[0100] The second surface of the cooling device may be attached to
the first surface of the IC die, wherein the stream of air
generated by the flexural plate wave device flows across the first
surface of the cooling device.
[0101] The flexural wave plate device may include a base layer, a
support layer coupled to the base layer, a diaphragm layer coupled
to the support layer, the support layer including an opening to
form an air gap between the base layer and the diaphragm layer, a
piezoelectric material layer coupled to the diaphragm layer, and a
wave generator formed on the piezoelectric material layer that is
configured to generate an acoustic wave that travels through the
piezoelectric material layer, the acoustic wave causing the stream
of air to flow across the electrical device.
[0102] The wave generator may include a first comb-shaped
electrically conductive feature, and a second comb-shaped
electrically conductive feature electrically isolated from and
interlocked with the first comb-shaped electrically conductive
feature, wherein a first oscillating signal is coupled to the first
comb-shaped electrically conductive feature, and a second
oscillating signal is coupled to the second comb-shaped
electrically conductive feature.
[0103] The electrical device may further include a wave absorber
formed on the piezoelectric material layer configured to receive
and absorb the acoustic wave to at least reduce a reflection of the
acoustic wave through the piezoelectric material layer.
[0104] The wave absorber may include a first comb-shaped
electrically conductive feature, and a second comb-shaped
electrically conductive feature interlocked with the first
comb-shaped electrically conductive feature.
[0105] The second comb-shaped electrically conductive feature may
be electrically coupled to the first comb-shaped electrically
conductive feature.
[0106] In another embodiment, a cooling device includes a body that
has opposing first and second surfaces, and a flexural plate wave
device on the first surface that is configured to generate a stream
of air to flow at least across the cooling device to cool an
integrated circuit (IC) during operation of the integrated circuit
(IC).
[0107] The body may be an IC die, and the second surface may be an
active surface of the IC die.
[0108] The cooling device may include a plurality of support
members on the first surface of the cooling device configured to
mount the cooling device to an IC die and form a channel between
the IC die and the cooling device, wherein the stream of air
generated by the flexural plate wave device flows through the
channel.
[0109] The second surface of the cooling device may be a recessed
region.
[0110] The second surface of the cooling wave device may be
configured to be attached to an IC die.
[0111] The flexural plate wave device may include a support layer
coupled to the body, a diaphragm layer coupled to the support
layer, the support layer including an opening to form an air gap
between the body and the diaphragm layer, a piezoelectric material
layer coupled to the diaphragm layer, and a wave generator formed
in contact with the piezoelectric material layer that is configured
to generate an acoustic wave that travels through the piezoelectric
material layer, the acoustic wave causing the stream of air to flow
at least across the cooling device.
[0112] The wave generator may include a first comb-shaped
electrically conductive feature, and a second comb-shaped
electrically conductive feature electrically isolated from and
interlocked with the first comb-shaped electrically conductive
feature, wherein a first oscillating signal is coupled to the first
comb-shaped electrically conductive feature, and a second
oscillating signal is coupled to the second comb-shaped
electrically conductive feature.
[0113] The cooling device may include a wave absorber formed in
contact with the piezoelectric material layer configured to receive
and absorb the acoustic wave to prevent the acoustic wave from
reflecting through the piezoelectric material layer.
[0114] In a further embodiment, a method includes operating an
integrated circuit (IC) of an electrical device that generates heat
during operation, and generating a stream of air with a flexural
plate wave device of the electrical device to dissipate at least a
portion of the heat generated by the IC die.
CONCLUSION
[0115] While various embodiments of the present invention have been
described above, it should be understood that they have been
presented by way of example only, and not limitation. It will be
apparent to persons skilled in the relevant art that various
changes in form and detail can be made therein without departing
from the spirit and scope of the invention. Thus, the breadth and
scope of the present invention should not be limited by any of the
above-described exemplary embodiments, but should be defined only
in accordance with the following claims and their equivalents.
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