U.S. patent application number 14/029902 was filed with the patent office on 2015-03-19 for design structure for chip extension.
The applicant listed for this patent is Taiwan Semiconductor Manufacturing Co., Ltd.. Invention is credited to Chia-Cheng Chang, Hung-Chang Hsieh, Chin-Min Huang, Chien-Wen Lai, Hua-Tai Lin, Kong-Beng Thei, Cherng-Shyan Tsay.
Application Number | 20150082265 14/029902 |
Document ID | / |
Family ID | 52575240 |
Filed Date | 2015-03-19 |
United States Patent
Application |
20150082265 |
Kind Code |
A1 |
Huang; Chin-Min ; et
al. |
March 19, 2015 |
DESIGN STRUCTURE FOR CHIP EXTENSION
Abstract
One embodiment relates to a method of achieving an circuit
dimension which is greater than a size of an exposure field of an
illumination tool. A first area of a first reticle field and a
second area of a second reticle field are defined. An extension
zone is created as a region outside the first area, and includes a
first layout shape formed on a first design level. A corresponding
forbidden zone is created for the second reticle field as a region
inside the second area where no layout shape on the first design
level is permitted. A second layout shape is formed on a second
design level within the forbidden zone. The first and second areas
are then abutted. Upon abutment of the first and second areas, the
second layout shape overlaps the first layout shape to form a
connection between circuitry of the first and second reticle
fields.
Inventors: |
Huang; Chin-Min; (Taichung
City, TW) ; Chang; Chia-Cheng; (Baoshan Township,
TW) ; Tsay; Cherng-Shyan; (Toufen Township, TW)
; Lai; Chien-Wen; (Hsinchu City, TW) ; Thei;
Kong-Beng; (Pao-Shan Village, TW) ; Lin; Hua-Tai;
(Hsinchu City, TW) ; Hsieh; Hung-Chang; (Hsin-Chu
City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Hsin-Chu |
|
TW |
|
|
Family ID: |
52575240 |
Appl. No.: |
14/029902 |
Filed: |
September 18, 2013 |
Current U.S.
Class: |
716/111 ;
716/119 |
Current CPC
Class: |
G06F 30/392 20200101;
H01L 23/528 20130101; G03F 1/36 20130101; H01L 21/76895
20130101 |
Class at
Publication: |
716/111 ;
716/119 |
International
Class: |
G06F 17/50 20060101
G06F017/50 |
Claims
1-12. (canceled)
13. A semiconductor device, comprising: a die comprising a combined
reticle field with an oblong shape that extends in a first
direction for a larger distance than in a second direction, wherein
the combined reticle field has a first reticle field comprising a
first plurality of layout shapes on a first design level and a
second reticle field comprising a second plurality of layout shapes
on the first design level; wherein the first plurality of layout
shapes extend into the second reticle field to positions spatially
separated from the second plurality of layout shapes along a
boundary region that extends across the combined reticle field in
the second direction, wherein the boundary region is devoid of
layout shapes on the first design level; wherein one or more of the
first plurality of layout shapes are electrically coupled to one or
more of the second plurality of layout shapes by a connection
disposed on second design layer, which extends across the boundary
region.
14. The semiconductor device of claim 13, wherein the connection
across boundary comprises a first feature which originates in the
first reticle field, extends across the boundary, and connects to a
second feature in the second reticle field.
15. The semiconductor device of claim 14, wherein the first feature
comprises a first gate structure, and the second feature comprises
a gate contact or a second gate structure.
16. The semiconductor device of claim 14, wherein the first feature
comprises a first metallization structure and the second feature
comprises a via structure or second metallization structure.
17. The semiconductor device of claim 13, wherein the first reticle
field and the second reticle field comprise identical circuit
structures.
18-20. (canceled)
21. A method of patterning a wafer, comprising: forming a first
reticle field having a first plurality of layout shapes
corresponding to a first design level relating to a first plurality
of structures to be formed on a semiconductor substrate, wherein
the first reticle field comprises a first forbidden zone devoid of
layout shapes; forming a second reticle field having a second
plurality of layout shapes corresponding to the first design level;
positioning the first reticle field and the second reticle field so
that the first forbidden zone of the first reticle field overlaps a
part of the second plurality of layout shapes within the second
reticle field; and interconnecting the first plurality of layout
shapes to the second plurality of layout shapes using a second
design level.
22. The method of claim 21, further comprising: forming a third
reticle field comprising a third plurality of layout shapes on the
second design level; and positioning the third reticle field so
that the third plurality of layout shapes abut the first plurality
of layout shapes and the second plurality of layout shapes within
the first forbidden zone.
23. The method of claim 22, further comprising: forming a fourth
reticle field comprising one or more layout shapes on a third
design level; and positioning the fourth reticle field so that the
one or more layout shapes couple the third plurality of layout
shapes abutting the first plurality of layout shapes to the third
plurality of layout shapes abutting the second plurality of layout
shapes within the first forbidden zone.
24. The method of claim 23, wherein the third design level resides
above the first design level and the second design level in a
layout design hierarchy.
25. The method of claim 23, wherein edges of the third reticle
field are vertically aligned with edges of the second reticle field
and are offset from edges of the first reticle field.
26. The method of claim 25, wherein edges of the fourth reticle
field are vertically aligned with edges of the third reticle
field.
27. The method of claim 21, wherein the first design level
comprises a first gate design level, and the second design level
comprises a contact design level.
28. The method of claim 21, wherein the first design level
comprises a first metallization design level and the second design
level comprises a via design level.
29. The method of claim 21, wherein the first reticle field and the
second reticle field comprise identical circuit layouts.
30. The method of claim 21, wherein the second reticle field
comprises a second forbidden zone disposed along a first edge of
the second reticle field, which opposes a second edge of the second
reticle field that overlaps the first reticle field.
31. The method of claim 21, wherein the first plurality of layout
shapes are spatially separated from the second plurality of layout
shapes on the first design level.
32. A method of patterning a wafer, comprising: forming a first
reticle field using a layout design system including a schematic
design tool, wherein the first reticle field comprises a first
interconnect zone having a first plurality of layout shapes
corresponding to a first design level and a first forbidden zone
devoid of layout shapes corresponding to the first design level;
forming a second reticle field using the layout design system,
wherein the second reticle field comprises a second interconnect
zone having a second plurality of layout shapes corresponding to
the first design level and a second forbidden zone devoid of layout
shapes corresponding to the first design level; positioning the
first reticle field to partially overlap the second reticle field
so that the second plurality of layout shapes extend into the first
forbidden zone in a layout representation that is stored in a
memory; positioning a third reticle field over the second reticle
field, wherein the third reticle field comprises a third plurality
of layout shapes corresponding to a second design level, which
contact the first plurality of layout shapes and the second
plurality of layout shapes within the first forbidden zone; and
positioning a fourth reticle field over the third reticle field,
wherein the fourth reticle field comprises one or more layout
shapes corresponding to a third design level, which couple the
third plurality of layout shapes that contact the first plurality
of layout shapes to the third plurality of layout shapes that
contact the second plurality of layout shapes within the first
forbidden zone.
33. The method of claim 32, wherein the second forbidden zone is
disposed along a first edge of the second reticle field, which
opposes a second edge of the second reticle field that overlaps the
first reticle field.
34. The method of claim 32, wherein the third design level resides
above the first design level and the second design level in a
layout design hierarchy.
35. The method of claim 32, wherein the first plurality of layout
shapes are spatially separated from the second plurality of layout
shapes on the first design level.
Description
BACKGROUND
[0001] The following disclosure relates to patterning of a
plurality reticle fields disposed on a wafer, and a method to form
connections between circuitry disposed on adjacent reticle
fields.
BRIEF DESCRIPTION OF THE DRAWINGS
[0002] FIG. 1 illustrates a plurality of reticle fields disposed on
a surface of a wafer, wherein connections are formed between
circuitry of adjacent reticle fields.
[0003] FIGS. 2A-2B illustrate some embodiments of an extension zone
and a forbidden zone corresponding to an integrated circuit (IC)
layout.
[0004] FIGS. 3A-3C illustrate some embodiments of a connection
formed across a boundary between two adjacent reticle fields.
[0005] FIGS. 4A-4F illustrate some embodiments of patterning
adjacent reticle fields with a step-and-repeat tool, in order to
form connections across a boundary between the adjacent reticle
fields.
[0006] FIG. 5 illustrates some embodiments of a method of forming a
connection across a reticle field boundary.
[0007] FIG. 6 illustrates an example of layout design
hierarchy.
[0008] FIG. 7 illustrates some embodiments of a design system,
configured to form an IC comprising a die further comprising two
adjacent reticle fields on a wafer.
[0009] FIGS. 8A-8C illustrate some embodiments of a connection
formed across a boundary between two adjacent reticle fields.
DETAILED DESCRIPTION
[0010] The present disclosure will now be described with reference
to the drawings wherein like reference numerals are used to refer
to like elements throughout, and wherein the illustrated structures
are not necessarily drawn to scale. It will be appreciated that
this detailed description and the corresponding figures do not
limit the scope of the present disclosure in any way, and that the
detailed description and figures merely provide a few examples to
illustrate some ways in which the inventive concepts can manifest
themselves.
[0011] In semiconductor manufacturing, a wafer comprising a
periodic array of reticle fields is patterned through a sequence of
successive photolithography steps, wherein each reticle field is
patterned individually by a step-and-repeat tool. The
photolithography steps include alignment of a photomask with each
reticle field, and exposure of light from a illumination tool
through the photomask onto the reticle field. The illumination
transfers a pattern from the photomask onto a layer of photoresist
disposed on the wafer. After all of the reticle fields have been
aligned and exposed by the step-an-repeat tool, the photoresist
layer is developed, and the developed portions are dissolved. The
wafer is then subjected an etch, implant, or other process which
forms components of an IC within each reticle field corresponding
to the pattern. Uniform illumination conditions across a reticle
field (e.g. focus and dose) limit the amount of surface area of the
wafer that the illumination tool can illuminate in a single
exposure. This defines an exposure field of the illumination
tool.
[0012] Accordingly, the present disclosure relates to a method and
system to achieve an IC dimension which is greater than a size of
an exposure field of the illumination tool. The method comprises
defining a first area of a first reticle field and a second area of
a second reticle field. An extension zone is created as a region
outside the first area, and includes a first layout shape formed on
a first design level. A corresponding forbidden zone is then
created for the second reticle field as a region inside the second
area where no layout shape formed on the first design level is
permitted. A second layout shape is then formed on a second design
level within the forbidden zone. The first and second areas are
then abutted when forming a plurality of reticle fields for wafer
patterning. Upon abutment of the first and second areas, the second
layout shape overlaps the first layout shape to form a connection
between circuitry of the first and second reticle fields.
[0013] FIG. 1 illustrates a plurality of reticle fields disposed on
a surface of a wafer 100. For the embodiments of FIG. 1, the wafer
100 comprises a silicon (Si) wafer. Alternatively, the wafer 100
may comprise another elementary semiconductor, such as germanium; a
compound semiconductor including silicon carbide, gallium arsenic,
gallium phosphide, indium phosphide, indium arsenide, or indium
antimonide; an alloy semiconductor including SiGe, GaAsP, AlInAs,
AlGaAs, GaInAs, GaInP, or GaInAsP; or combinations thereof.
[0014] The plurality of reticle fields include two types of reticle
fields: a first reticle field type 102, comprising a first circuit
component; and a second reticle field type 104, comprising a second
circuit component. Some IC manufacturing techniques comprise dicing
of the wafer 100 along scribe lines 106 which separate adjacent
reticle fields. Scribing is achieved by mechanical means such as a
dicing saw, or by a laser, into first and second die, respectively.
For the embodiments of the present disclosure, a pair 108 of first
and second reticle field types 102, 104 are coupled by a connection
across the scribe line 106, which couples the first and second
circuit components, effectively doubling a size of an IC formed
from a single reticle field.
[0015] For the embodiments of FIG. 1, the pair 108 of first and
second reticle field types 102, 104 are not scribed along the
scribe line 106, but rather remain coupled to form a single IC
after scribing. Scribe lines 106 between uncoupled first and second
reticle field types 102, 104 are diced to separate the single ICs
formed from the coupled first and second reticle field types 102,
104. In some embodiments, the scribe lines 106 comprises a crack
stop structure configured for mechanical re-enforcement of the
wafer 100 during scribing. In some embodiments, the scribe lines
106 comprise a moisture barrier configured to prevent contamination
of circuitry within diced die. In some embodiments, while the
scribe line 106 between coupled first and second reticle field
types 102, 104 forming a single IC are un-diced, the crack stop,
moisture barrier, or other shapes (e.g., alignment marks, metrology
structures, etc.) can be used to identify a boundary between the
first and second reticle field types 102, 104 within a die.
[0016] It is appreciated that in various embodiments the first and
second circuit components of the coupled IC may include various
passive and active microelectronic devices, such as resistors,
capacitors, inductors, diodes, metal-oxide-semiconductor field
effect transistors (MOSFETs), complementary MOS (CMOS) transistors,
bipolar junction transistors (BJTs), finFET transistors, ultra-high
voltage (UHV) devices, other high power MOS transistors, or other
types of transistors.
[0017] FIG. 2A illustrates of a layout view 200A corresponding to a
reticle field, comprising a plurality of first layout shapes 202
formed on a first design level (e.g., a gate design level, a
metallization design level, etc.), within a chip area 204 of the
layout view 200A. In some embodiments, the layout view 200A
comprises an industry-standard layout format such as GDSII or
OASIS, formed in an industry-standard layout design tool such as a
CADENCE VIRTUOSO or MENTOR GRAPHICS design window. The layout view
200A also comprises an extension zone 206, which resides outside
the chip area 204, and includes one or more first layout shapes
202. The layout view 200A further comprises a forbidden zone 208,
which resides inside the chip area 204, where no first layout shape
202 is permitted by layout guidelines.
[0018] In some embodiments, the layout guidelines comprise "design
rules" which define allowed geometries and placement of the first
layout shapes 202, extension zone 206, and forbidden zone 208
relative to the chip area 204. A design rule outlawing placement of
first layout shapes 202 within the forbidden zone 208 is one
example. A design rule outlawing a first layout shape 202 with a
size below a minimum threshold is another example.
[0019] FIG. 2B illustrates of a layout view 200B, comprising layout
view 200A, wherein additional layout shapes have been placed above
the first layout shapes 202. Note that in FIG. 2B only a single
first layout shape 202 is numbered. The other numerical labels
(202) have been removed to enhance readability. However, as the
pattern of first layout shapes 202 is identical between FIG. 2A and
FIG. 2B, the first layout shapes 202 are discernible in FIG. 2B.
The additional layout shapes comprise second layout shapes 210
(e.g., formed on a gate contact design level or on a metal via
design level), and third layout shapes 212 (e.g., formed on a
metallization design level). The second layout shapes 210 form
connections between the first layout shapes 202 and the third
layout shapes 212 in layout view 200B. The first, second, and third
layout shapes 202, 210, 212 of the layout view 200B will be
decomposed onto three respective quartz photomasks for patterning
of these features on a semiconductor substrate (e.g., a reticle
field of wafer 100).
[0020] Note that the second and third layout shapes 210, 212 of
FIG. 2B extend into the forbidden zone 208. In some embodiments,
the aforementioned design rules outlaw placement of first layout
shapes 202 within the forbidden zone 208, while requiring exact
placement of the second and third layout shapes 210, 212 relative
to the first layout shapes 202, chip area 204, or forbidden zone
208. It will be demonstrated in the embodiments of FIG. 3 that the
exact placement enforced by the design rules ensures both
manufacturability and alignment of the second and third layout
shapes 210, 212 residing in the forbidden zone 208 of a first
layout view 200B, to first layout shapes residing in the extension
zone 206 of a second layout view 200B, when two such layout views
200B are placed side-by-side, such that their respective chip areas
204 abut.
[0021] FIG. 3A illustrates the top view 300A of an abutment of a
first chip area 302 and a second chip area 304, wherein the first
and second chip areas 302, 304 each comprise layout view 200B. The
abutment of the first and second chip areas 302, 304 forms an
interconnect zone 306 within the second chip area 304 comprising an
intersection of the extension zone 206 and the forbidden zone 208.
Connections 308 are formed between the first and second chip areas
302, 304 through the second and third layout shapes 210, 212 of the
second chip area 304, and the first layout shapes 202 of the first
chip area.
[0022] It is again appreciated that the numerical labels have again
been removed from all but one of the first, second, and third
layout shapes 202, 210, 212 of FIG. 3A to enhance readability.
However, as the pattern of the first, second, and third layout
shapes 202, 210, 212 is identical between FIGS. 2A-2B and FIG. 3A,
these shapes are discernible. Note further that this practice will
be followed again in FIGS. 3B-3C, FIGS. 4A-4F, and FIGS. 8A-8C.
[0023] For the embodiments of FIGS. 2A-2B and FIG. 3A, extension
zone 206 and the forbidden zone 208 are positioned along opposite
edges of a boundary defining the a respective chip area, and
comprise identical shapes. As a result, the abutment of the first
and second chip areas 302, 304 results the interconnect zone 306
which also forms an identical shape to the extension zone 206 and
the forbidden zone 208. In other embodiments, the extension zone
206 and the forbidden zone 208 do not form identical shapes.
[0024] FIG. 3B illustrates a cross-sectional view 300B of the top
view 300A, wherein a connection 308 between the first and second
chip areas 302, 304 within the interconnect zone 306 is
illustrated. FIG. 3C illustrate cross-sectional view 300C of layout
shape occupancy within the first and second chip areas 302, 304,
and the interconnect zone 306.
[0025] FIGS. 4A-4F illustrate some embodiments of patterning of two
adjacent reticle fields with a step-and-repeat tool, in order to
form connections across a boundary between the adjacent reticle
fields. The patterning occurs within a semiconductor fabrication
plant, or "fab," wherein a series of photomasks are aligned with a
wafer to transfer respective patterns of the photomask onto a
surface of the wafer. In some embodiments, the wafer comprises a
300 mm wafer or a 450 mm wafer for manufacturing within the fab,
wherein two adjacent reticle fields are exposed individually to
form the respective pattern. The step-and-repeat tool is used to
align a photomask with metrology structures of a respective reticle
field to ensure robust alignment. After patterning of the
respective reticle field, the step-and-repeat tool moves to the
next adjacent reticle field. After then entire surface of the wafer
has been patterned, additional manufacturing steps follow,
comprising photoresist development, layer etch, implantation,
epitaxial layer growth, etc. to form a pattern which defines device
structures and interconnects of the integrated circuit (IC), within
a respective reticle field.
[0026] FIG. 4A illustrates a first exposure by a first photomask
coupled to the step-and-repeat tool, to form a first pattern of
first layout shapes 202 within a first reticle field 402. The first
reticle field 402 comprises a first extended zone 206 residing
outside a reticle field boundary 404 (i.e., a scribe line). The
first extended zone 206 comprises first layout shapes 202. The
first reticle field 402 further comprises a first forbidden zone
208 in which no first layout shapes 202 are permitted.
[0027] FIG. 4B illustrates a second exposure by the first photomask
to form a second pattern of first layout shapes 202 within a second
reticle field 406, after stepping by the step-and-repeat tool. The
second reticle field 406 comprises a second extended zone which
overlaps the first forbidden zone 208 to form an interconnect zone
412.
[0028] FIG. 4C illustrates a first exposure by a second photomask
to form a first pattern of second layout shapes 210 within the
first reticle field 402, by the step-and-repeat tool. The first
pattern of second layout shapes 210 is aligned to the first layout
shapes 202. The first pattern of second layout shapes 210 are also
formed in the first forbidden zone 208.
[0029] FIG. 4D illustrates a second exposure by the second
photomask to form a second pattern of second layout shapes 210
within the second reticle field 406, after stepping by the
step-and-repeat tool. The second pattern of second layout shapes
210 are also formed in the interconnect zone 412, and align (408)
to the first layout shapes 202 within the interconnect zone
412.
[0030] FIG. 4E illustrates a first exposure by a third photomask
coupled to the step-and-repeat tool, to form a first pattern of
third layout shapes 212 within the first reticle field 402. The
third layout shapes 212 align to the second layout shapes 210, and
are also formed in the first forbidden zone 208.
[0031] FIG. 4F illustrates a second exposure by the third photomask
to form a second pattern of third layout shapes 212 within the
second reticle field 406, after stepping by the step-and-repeat
tool. The second pattern of third layout shapes 212 are also formed
in the interconnect zone 412, and align to the second layout shapes
210 within the interconnect zone 412, to form a set of
across-boundary connections 410 between to circuitry of the first
and second reticle fields 402, 406, wherein the circuitry comprises
the first, second, and third layout shapes 202, 210, 212.
[0032] FIG. 5 illustrates some embodiments of a method 500 of
forming a connection across a reticle field boundary. While the
method 500 is illustrated and described as a series of acts or
events, it will be appreciated that the illustrated ordering of
such acts or events are not to be interpreted in a limiting sense.
For example, some acts may occur in different orders and/or
concurrently with other acts or events apart from those illustrated
and/or described herein. In addition, not all illustrated acts may
be required to implement one or more aspects or embodiments of the
description herein. Further, one or more of the acts depicted
herein may be carried out in one or more separate acts and/or
phases.
[0033] At 502 a first area of a first reticle field and a second
area of a second reticle field are defined.
[0034] At 504 an extension zone is defined as a region outside the
first area comprising a first layout shape formed on a first design
level. In some embodiments, the first layout shape comprises a
first gate design level. In some embodiments, the first layout
shape comprises a first metallization design level.
[0035] At 506 a forbidden zone for the second reticle field is
defined as a region inside the second area wherein no first layout
shape formed on the first design level is permitted. The forbidden
zone contains a second layout shape formed on a second design
level. In some embodiments, the second layout shape comprises a
contact design level or a second gate design level. In some
embodiments, the second layout shape comprises a via design level
or second metallization design level.
[0036] At 508 the first and second areas are abutted to form an
interconnect zone within the second area. The interconnect zone
comprises an intersection of the extension zone and the forbidden
zone. As a result, the first layout shape of the first die resides
inside the second area of the second die. The second layout shape
overlaps the first layout shape upon abutment, to form a connection
between active circuitry the first and second reticle fields.
[0037] In some embodiments, layout guidelines in the form of design
rules are defined govern allowed geometries and placement of the
extension zone and first layout shape relative to the first area,
and allowed geometries and placement of the forbidden zone and the
second layout shape relative to the second layout area,
respectively. The extension zone, forbidden zone, and the first and
second layout shapes are then placed according to the layout
guidelines.
[0038] FIG. 6 illustrates an example of layout design hierarchy. It
is appreciated by one or ordinary skill in the art of layout design
that for large layouts a design hierarchy may be employed to reduce
data size. This reduction can also reduce layout verification time
(e.g., avoid checking a repeated cell against the design rules
multiple times). A method of cell "instantiation" through layout
design hierarchy is illustrated in the embodiments of FIG. 6,
wherein a primitive cell 602 comprising a transistor-level
representation of a circuit design (e.g., a single FET, or other
device) is defined in a first level of design hierarchy. One or
more such primitive cells 602 are instantiated in a second level of
design hierarchy to form a layout macro 604 comprising a functional
circuit (i.e., NAND, NOR, XOR, etc.). Some embodiments of primitive
cell instantiation comprises symmetry operations such as flipping
or rotation. One or more layout macros 604 are then be instantiated
in a third level of design hierarchy, to form a chip layout 606.
This type of hierarchical instantiation may be repeated through an
arbitrary number of hierarchical levels.
[0039] Various embodiments of hierarchical layout design employ
different levels of hierarchy to achieve layout efficiency. For the
embodiments of the present disclosure, a connection between a first
layout shape of a first chip layout and a second layout shape of a
second chip layout is formed with a third layout shape, which
resides in a level of layout design hierarchy which is above a top
level of layout design hierarchy of the first and second chip
layouts.
[0040] FIG. 7 illustrates some embodiments of a design system 700,
configured to form an IC, comprising a die further comprising two
adjacent reticle fields, by forming a connection across the
boundary between the two adjacent reticle fields. The design system
700 comprises a comprising a schematic design tool 702 such as a
CADENCE VIRTUOSO or MENTOR GRAPHICS design window, configured to
produce a schematic representation 708 of a circuit.
[0041] The design system 700 further comprises a layout design tool
704, configured to produce a layout representation 710 of the
circuit corresponding to the schematic representation 708, where
circuit components are formed with physical shapes such as design
layers (e.g., gate design level, metallization design level, etc.)
for manufacturing. For the embodiments of FIG. 7, the layout design
tool 704 is further configured to define a first area of a first
reticle field and a second area of a second reticle field, wherein
the first and second areas are each surrounded by a boundary. The
layout design tool is further configured to define an extension
zone for the first or second reticle field as a region outside the
first or second area boundary, comprising a first layout shape
formed on a first design level. The layout design tool is further
configured to define a forbidden zone for the first or second
reticle field as a region inside the first or second area boundary,
wherein no layout shape formed on the first design level is placed.
The layout design tool is further configured abut the first and
second areas, such that the first layout shape of the first reticle
field resides inside the second area of the second reticle field.
The layout design tool is further configured to overlap the first
layout shape with a second layout shape formed on a second design
level within the forbidden zone of the second reticle field,
forming a connection between circuitry the first and second reticle
fields.
[0042] The design system 700 further comprises a memory 706,
configured to store the schematic and layout representations 708,
710. An LVS tool 712 is configured to determine whether the layout
representation 710 corresponds to the schematic representation 708.
The LVS tool 712 contains LVS checking software such as CALIBRE,
QUARTZ, or HERCULES, which recognizes drawn layout shapes on the
design layers of the layout representation 710 that correspond to
the electrical components of the circuit (e.g., wires, pins, etc.)
of the schematic representation 708. A simulation tool 714
containing SPICE or SPECTRE software is coupled to the memory 706,
and configured to model the electrical behavior of the schematic
representation at 708 or the layout representation 710 within the
design window.
[0043] The design system 700 further comprises a layout
verification tool 716, configured to reference layout guidelines
for the first and second reticle fields which define allowed
geometries and placement of the extension zone, forbidden zone, and
the first and second layout shapes relative to the first and second
reticle field areas. The layout guidelines comprise design rules,
which are encoded into a design rule checking code such a CALIBRE
or QUARTZ format, and configured to verify placement of the
extension zone, forbidden zone, and the first and second layout
shapes according to the layout guidelines.
[0044] FIGS. 8A-8C illustrate some embodiments of a connection
formed across a boundary between two adjacent reticle fields. The
embodiments of FIGS. 8A-8C are substantially identical to the
embodiments of FIGS. 3A-3C, with the exception that the embodiments
of FIGS. 8A-8C utilize an extension of the first layout shapes to
form connections 808 in place of the second and third layout shapes
210, 212, to reduce mask misalignment effects of the
step-and-repeat tool. The mask misalignment effects can result in
offsets between the first, second, and third layout shapes 202,
210, 212, which can reduce contact area and degrade electrical
performance of an IC formed by the connected reticle fields.
[0045] FIG. 8A illustrates the top view 800A of an abutment of a
first chip area 802 and a second chip area 804 each comprising
layout view 200B, to form an interconnect zone 806 within the
second chip area 804. The interconnect zone 806 comprises an
intersection of the extension zone 206 and the forbidden zone 208
of the layout views 200B. Connections 808 are formed between the
first and second chip areas 802, 804 through the first layout
shapes 202 of the first chip area.
[0046] FIG. 8B illustrates a cross-sectional view 800B of the top
view 800A, comprising a connection 808 between the first and second
chip areas 802, 804 within the interconnect zone 806. FIG. 8C
illustrate cross-sectional view 800C of layout shape occupancy
within the first and second chip areas 802, 804, and the
interconnect zone 806. Note that when a single layer (e.g., first
layout shapes 202) is used to form the connections 808, and the
remaining layout shapes on the other design layers may be
constrained to their respective reticle boundaries. It is
appreciated that various embodiments may employ a different layer
constraints within the reticle field boundaries, extension zones
206, and the forbidden zones 208, to achieve a comparable
result.
[0047] Although the disclosure has been shown and described with
respect to a certain aspect or various aspects, equivalent
alterations and modifications will occur to others of ordinary
skill in the art upon reading and understanding this specification
and the annexed drawings. In particular regard to the various
functions performed by the above described components (assemblies,
devices, circuits, etc.), the terms (including a reference to a
"means") used to describe such components are intended to
correspond, unless otherwise indicated, to any component which
performs the specified function of the described component (i.e.,
that is functionally equivalent), even though not structurally
equivalent to the disclosed structure which performs the function
in the herein illustrated exemplary embodiments of the disclosure.
In addition, while a particular feature of the disclosure may have
been disclosed with respect to only one of several aspects of the
disclosure, such feature may be combined with one or more other
features of the other aspects as may be desired and advantageous
for any given or particular application. Furthermore, to the extent
that the terms "including", "includes", "having", "has", "with", or
variants thereof are used in either the detailed description and
the claims, such terms are intended to be inclusive in a manner
similar to the term "comprising".
[0048] Therefore, it will be appreciated that the present
disclosure relates to a method and system to achieve an IC
dimension which is greater than a size of an exposure field of an
illumination tool. The method comprises defining a first area of a
first reticle field, and a second area of a second reticle field.
An extension zone is created as a region outside the first area,
and includes a first layout shape formed on a first design level. A
corresponding forbidden zone is then created for the second reticle
field as a region inside the second area where no layout shape
formed on the first design level is permitted. A second layout
shape is then formed on a second design level within the forbidden
zone. The first and second areas are then abutted when forming a
plurality of reticle fields for wafer patterning. Upon abutment of
the first and second areas, the second layout shape overlaps the
first layout shape to form a connection between circuitry of the
first and second reticle fields.
[0049] In some embodiments, a method of forming a connection across
a reticle field boundary is disclosed. The method comprises
defining a first area of a first reticle field and a second area of
a second reticle field, and defining an extension zone as a region
outside the first area comprising a first layout shape formed on a
first design level. The method further comprises abutting the first
and second areas, such that the first layout shape of the first
reticle field resides inside the second area of the second reticle
field.
[0050] In some embodiments, a semiconductor device is disclosed.
The semiconductor device comprises a first die comprising a first
circuit component, and a second die comprising a second circuit
component. The first and second circuit components are coupled by a
connection across a scribe line which separates the first and
second die.
[0051] In some embodiments, a design system for an integrated
circuit is disclosed. The design system comprises a layout design
tool configured to define an area of a first reticle field and a
second area of a second reticle field, wherein the first and second
areas are surrounded by a boundary. The design system is further
configured to define an extension zone for the first or second
reticle field as a region outside the first or second area
comprising a first layout shape formed on a first design level, and
to define a forbidden zone for the first or second reticle field as
a region inside the first or second area wherein no layout shape
formed on the first design level is placed. The design system is
further configured to abut the first and second areas, such that
the first layout shape of the first reticle field resides inside
the second area of the second reticle field.
* * * * *