U.S. patent application number 14/474835 was filed with the patent office on 2014-12-18 for method for fabricating semiconductor device and the semiconductor device.
This patent application is currently assigned to TOHOKU UNIVERSITY. The applicant listed for this patent is FUJI ELECTRIC CO., LTD., TOHOKU UNIVERSITY, TOKYO ELECTRON LIMITED. Invention is credited to Katsushige HARADA, Kazuhide HASEBE, Hiroshi KAMBAYASHI, Yuichiro MOROZUMI, Tadahiro OHMI, Akinobu TERAMOTO, Hirokazu UEDA.
Application Number | 20140367699 14/474835 |
Document ID | / |
Family ID | 46580804 |
Filed Date | 2014-12-18 |
United States Patent
Application |
20140367699 |
Kind Code |
A1 |
TERAMOTO; Akinobu ; et
al. |
December 18, 2014 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR
DEVICE
Abstract
The method for fabricating a semiconductor device is to
fabricate a semiconductor device including GaN (gallium nitride)
that composes a semiconductor layer and includes a step of forming
a gate insulating film. In the step, at least one film selected
from the group consisting of a SiO.sub.2 film and an
Al.sub.2O.sub.3 film is formed on a nitride layer containing GaN by
using microwave plasma and the formed film is used as at least a
part of the gate insulating film.
Inventors: |
TERAMOTO; Akinobu;
(Sendai-shi, JP) ; KAMBAYASHI; Hiroshi;
(Yokohama-shi, JP) ; UEDA; Hirokazu; (Sendai-City,
JP) ; MOROZUMI; Yuichiro; (Nirasaki-City, JP)
; HARADA; Katsushige; (Nirasaki-City, JP) ;
HASEBE; Kazuhide; (Nirasaki-City, JP) ; OHMI;
Tadahiro; (Sendai-shi, JP) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
TOHOKU UNIVERSITY
FUJI ELECTRIC CO., LTD.
TOKYO ELECTRON LIMITED |
Sendai-shi
Kawasaki-shi
Tokyo |
|
JP
JP
JP |
|
|
Assignee: |
TOHOKU UNIVERSITY
Sendai-shi
JP
FUJI ELECTRIC CO., LTD.
Kawasaki-shi
JP
TOKYO ELECTRON LIMITED
Tokyo
JP
|
Family ID: |
46580804 |
Appl. No.: |
14/474835 |
Filed: |
September 2, 2014 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
13981048 |
Jul 22, 2013 |
|
|
|
PCT/JP2012/051348 |
Jan 23, 2012 |
|
|
|
14474835 |
|
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Current U.S.
Class: |
257/76 ;
438/779 |
Current CPC
Class: |
H01L 21/0254 20130101;
H01L 29/778 20130101; H01L 21/022 20130101; H01L 2924/0002
20130101; H01L 29/517 20130101; H01L 29/42364 20130101; H01L
21/28264 20130101; H01L 21/0228 20130101; H01L 21/02274 20130101;
H01L 29/205 20130101; H01L 29/2003 20130101; H01L 29/7787 20130101;
H01L 29/51 20130101; H01L 29/513 20130101; H01L 2924/00 20130101;
H01L 2924/0002 20130101; H01L 21/02164 20130101; H01L 23/564
20130101; H01L 21/02178 20130101; H01L 29/66462 20130101 |
Class at
Publication: |
257/76 ;
438/779 |
International
Class: |
H01L 21/02 20060101
H01L021/02; H01L 29/20 20060101 H01L029/20; H01L 29/205 20060101
H01L029/205; H01L 21/28 20060101 H01L021/28; H01L 23/00 20060101
H01L023/00; H01L 29/51 20060101 H01L029/51; H01L 29/778 20060101
H01L029/778 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 25, 2011 |
JP |
2011-013066 |
Claims
1. A semiconductor device including GaN that composes a
semiconductor layer comprising: a nitride layer containing GaN that
composes the semiconductor layer; and a gate insulating film formed
on the nitride layer, wherein the gate insulating film includes at
least one film selected from the group consisting of a SiO.sub.2
film formed by using microwave plasma generated with microwaves at
a frequency of 2.45 GHz by using a radial line slot antenna and an
Al.sub.2O.sub.3 film formed with microwave plasma generated with
microwaves at a frequency of 2.45 GHz by using the radial line slot
antenna.
2. The semiconductor device according to claim 1, wherein the
nitride layer includes a GaN layer and an AlGaN layer
Description
CROSS REFERENCE TO RELATED APPLICATION
[0001] The present application is a divisional application of U.S.
application Ser. No. 13/981,048, filed on Jul. 22, 2013, which is a
National Stage of International Application No. PCT/JP2012/051348,
filed on Jan. 23, 2012, which claimed priority to Japanese
Application No. 2011-013066, filed on Jan. 25, 2011. Each of the
above-referenced applications are hereby incorporated by reference
in their entirety.
BACKGROUND OF THE INVENTION
[0002] This invention relates to a method for fabricating a
semiconductor device and the semiconductor device.
TECHNICAL FIELD
[0003] Recently, semiconductor devices with an active layer made of
GaN (gallium nitride)-based materials, or group III-V compounds,
have been actively developed. The GaN-based nitrides have a wider
band gap than GaAs (gallium arsenide)-based nitrides, which are the
same group III-V compounds used as a material of the semiconductor
devices. Such GaN-based nitrides with a wide band gap are being
actively developed to find applications especially in a field of
short wavelength light-emitting materials. The GaN-based
semiconductor devices include AlGaN (aluminum gallium
nitride)/GaN-based semiconductor devices with a heterojunction made
of dissimilar materials.
[0004] These GaN-based semiconductor devices can achieve relatively
high field effect mobility. This property of the GaN-based
semiconductor devices have captured attention in semiconductor
device development aiming at low operation power and low power
consumption.
[0005] Other properties required for the GaN-based power
semiconductor devices are normally-off operation, low
ON-resistance, low interface state density, high dielectric
breakdown voltage, and so on. In order to obtain the properties,
gate insulating films formed on the GaN-based semiconductor devices
are also required to have the properties that satisfy the
aforementioned requirements.
[0006] One possible way to form the gate insulating film on a
GaN-based semiconductor device is to oxidize the outermost surface
of a GaN layer, which is a semiconductor layer, to form an oxide
film, i.e., a Ga.sub.2O.sub.3 (gallium oxide) film and use the
oxide film as the gate insulating film. However, Ga.sub.2O.sub.3
has a band gap of approximately 4.8 eV only. In addition,
Ga.sub.2O.sub.3 has a conduction band offset (hereinafter sometimes
referred to as ".DELTA.Ec"), which is energy band discontinuity on
the conduction band side of GaN, of approximately 0.5 eV and a
valence band offset (hereinafter sometimes referred to as
".DELTA.Ev"), which is energy band discontinuity on the valence
band side of GaN, of approximately 1.1 eV. Even if a
Ga.sub.2O.sub.3 film of high quality can be formed, it is not
preferable to employ the Ga.sub.2O.sub.3 film having small band gap
.DELTA.Ec and .DELTA.Ev as a gate insulating film in terms of
current leakage. Thus, what is needed to form a GaN-based
semiconductor device functioning as a good semiconductor element is
to form an insulating film having a large band gap and so on as a
gate insulating film on the upper side of a GaN layer, which is a
semiconductor layer, rather than to form the Ga.sub.2O.sub.3 film
as the gate insulating film by oxidation of the outermost surface
of the GaN layer.
[0007] A technology of a nitride compound semiconductor transistor,
more specifically, an AlGaN/GaN-based heterojunction transistor is
disclosed in Japanese Unexamined Patent Publication No. 2008-103408
(PTL 1). A technology of a nitride semiconductor element is
disclosed in Japanese Unexamined Patent Publication No. 2008-277640
(PTL 2).
[0008] The nitride compound semiconductor transistor disclosed in
PTL 1 is obtained by forming a double-layer gate insulating film on
a nitride compound semiconductor layer. Specifically, the
double-layer gate insulating film is composed of a first gate
insulating film that is a silicon nitride film formed on the
nitride compound semiconductor layer and a second gate insulating
film that is formed on the silicon nitride film and is made of a
material having higher breakdown strength than the silicon nitride
film. According to the structure, since the interface state density
between the silicon nitride film formed on the lower side and the
nitride compound semiconductor layer is reduced and the gate
insulating film formed on the upper side is made of the material
with high breakdown strength, the transistor can achieve high
mobility in a channel region and low ON-resistance.
[0009] In addition, the nitride semiconductor element disclosed in
PTL 2 is characterized by including a field isolation film
containing silicon and a gate insulating film not containing
silicon. Specifically, the gate insulating film is composed of, for
example, AlN (aluminum nitride) and some other materials, instead
of silicon. The exclusion of silicon can maintain the concentration
of 2DEG (Two Dimensional Electron Gas) in a region immediately
under the gate electrode relatively low and the concentration of
2DEG in an offset region relatively high to achieve both the
normally-off operation and low ON-resistance.
CITATION LIST
Patent Literature
[0010] PTL1: Japanese Unexamined Patent Publication No.
2008-103408
[0011] PTL2: Japanese Unexamined Patent Publication No.
2008-277640
SUMMARY OF THE INVENTION
Technical Problem
[0012] In PTL 1 described above, the silicon nitride film, as
represented by SiN (silicon nitride), which is one layer in the
double-layer gate insulating film, needs to be formed precisely.
However, it is very difficult to properly form such a silicon
nitride film containing nitrogen while maintaining the
aforementioned properties.
[0013] In PTL 2, the gate insulating film does not include silicon,
but includes, concretely, AlN or the like. However, such a gate
insulating film containing AlN or the like is not always
appropriate to use as a gate insulating film of the GaN-based
nitride semiconductor element in terms of the required high
breakdown voltage.
[0014] An available material having a large band gap for the
GaN-based semiconductor device is a silicon dioxide film (SiO.sub.2
film). The silicon dioxide film can be formed on the upper side of
the GaN by a CVD (Chemical Vapor Deposition) process by using
plasma generated by an ECR (Electron Cyclotron Resonance) apparatus
or by a CVD process using CCP (Capacitively Coupled Plasma) as
represented by a parallel plate apparatus. The silicon dioxide film
formed on the upper side of the GaN layer through the
aforementioned processes can be possibly used as a gate insulating
film.
[0015] However, plasma generated by the parallel plate apparatus or
the like has a relatively high electron temperature and the surface
of a specimen to be processed is exposed to the high electron
temperature, and therefore the surface on the processed side of the
GaN layer may suffer electrical stress, such as charging damage,
and physical damage caused by ion irradiation and so on during the
CVD process. The damaged GaN layer induces degradation of the field
effect mobility, resulting in property degradation as a GaN-based
semiconductor device.
[0016] This invention has an object to provide a method for
fabricating a semiconductor device with excellent properties.
[0017] Another object of the invention is to provide a
semiconductor device with excellent properties.
Solution to Problem
[0018] The method for fabricating the semiconductor device
according to the present invention is to fabricate a semiconductor
device including GaN (gallium nitride) that composes a
semiconductor layer and includes a step of forming a gate
insulating film, in the step at least one film selected from the
group consisting of a SiO.sub.2 film and an Al.sub.2O.sub.3 film
being formed on a nitride layer containing GaN by using microwave
plasma and the formed film being used as at least a part of the
gate insulating film.
[0019] According to the structure, when the gate insulating film of
the semiconductor device is formed on the GaN layer, plasma is
excited by microwave plasma. Since the plasma used for processing
has a relatively low electron temperature, charging damage and
other damage to the GaN-containing nitride layer, which serves as a
base layer, can be significantly reduced. In addition, at least one
film selected from the group consisting of the SiO.sub.2 film
formed by using the microwave plasma and the Al.sub.2O.sub.3 film
formed by using the microwave plasma is used as at least a part of
the gate insulating film, thereby improving the properties of the
gate insulating film. Therefore, a semiconductor device with
excellent properties can be fabricated.
[0020] Preferably, the step of forming the gate insulating film
includes a plasma-enhanced CVD process using microwave plasma.
[0021] The step of forming the gate insulating film can include a
plasma-enhance ALD (Atomic Layer Deposition) process using
microwave plasma.
[0022] More preferably, the step of forming the gate insulating
film is a step of forming a film in which a SiO.sub.2 film and an
Al.sub.2O.sub.3 film are stacked.
[0023] In a further preferable embodiment, the step of forming the
gate insulating film is a step of forming the Al.sub.2O.sub.3 film
on a nitride layer and forming the SiO.sub.2 film on the formed
Al.sub.2O.sub.3 film to form the gate insulating film.
[0024] In addition, the step of forming the gate insulating film
may be a step of forming the Al.sub.2O.sub.3 film by a thermal ALD
process and forming the SiO.sub.2 film by a plasma-enhanced CVD
process.
[0025] More preferably, the step of forming the gate insulating
film may be a step of forming either one of the SiO.sub.2 film and
Al.sub.2O.sub.3 film to form the gate insulating film and may
include a step of forming either one of the films by both the
plasma-enhanced CVD and plasma-enhanced ALD processes.
[0026] In addition, the step of forming the gate insulating film
may be a step of forming the Al.sub.2O.sub.3 film on the nitride
layer by the thermal ALD process, subjecting the formed
Al.sub.2O.sub.3 film to radical oxidation for a predetermined
period of time, and forming the SiO.sub.2 film on the
radical-oxidized Al.sub.2O.sub.3 film by the plasma-enhanced CVD
process to form the gate insulating film.
[0027] In addition, the step of forming the gate insulating film is
a step of forming SiO.sub.2 films to form the gate insulating film
and may be a step of forming a first SiO.sub.2 film on a nitride
layer by the plasma-enhanced ALD process and forming a second
SiO.sub.2 film by the plasma-enhanced CVD process on the first
SiO.sub.2 film formed by the plasma-enhanced ALD process to form
the gate insulating film including the first and second SiO.sub.2
films.
[0028] The step of forming the gate insulating film preferably
includes a step of introducing gas containing nitrogen atoms for
processing.
[0029] In a further preferable embodiment, the plasma-enhanced ALD
process includes a step of introducing deposition gas containing
BTBAS (bis-tertiaryl-buthyl-amino-silane) onto the nitride
layer.
[0030] The step of forming the gate insulating film preferably
includes a step of successively performing the plasma-enhanced ALD
and plasma-enhanced CVD processes.
[0031] In the step of forming the gate insulating film in a
preferable embodiment, the microwave plasma is generated by
producing microwaves at a frequency of 2.45 GHz.
[0032] More preferably, in the step of forming the gate insulating
film, the microwave plasma is generated by using a radial line slot
antenna (RLSA).
[0033] A step of forming the nitride layer includes a step of
forming a nitride layer with a heterojunction.
[0034] More preferably, the step of forming the nitride layer
includes a step of forming a nitride layer composed of a GaN layer
and AlGaN (aluminum gallium nitride) layer.
[0035] The semiconductor device in another aspect of the present
invention is a semiconductor device including GaN that composes a
semiconductor layer and includes a nitride layer containing GaN
that composes the semiconductor layer and a gate insulating film
formed on the nitride layer. The gate insulating film includes at
least one film selected from the group consisting of a SiO.sub.2
film formed by using microwave plasma and an Al.sub.2O.sub.3 film
formed by using microwave plasma.
[0036] When the gate insulating film of the semiconductor device is
formed on the GaN layer, plasma is excited by microwave plasma.
Since the plasma used for processing has a relatively low electron
temperature, charging damage and other damage to the GaN-containing
nitride layer, which serves as a base layer, can be significantly
reduced. At least one film selected from the group consisting of
the SiO.sub.2 film formed by using the microwave plasma and the
Al.sub.2O.sub.3 film formed by using the microwave plasma is used
as at least a part of the gate insulating film, thereby providing
the semiconductor device with excellent properties.
[0037] The nitride layer is preferably composed of a GaN layer and
an AlGaN layer.
Advantageous Effects of Invention
[0038] According to the method for fabricating the semiconductor
device, when the gate insulating film is formed on the GaN layer,
plasma is excited by microwave plasma. Since the plasma used for
processing has a relatively low electron temperature, charging
damage and other damage to the GaN-containing nitride layer, which
serves as a base layer, can be significantly reduced. In addition,
at least one film selected from the group consisting of the
SiO.sub.2 film formed by using the microwave plasma and the
Al.sub.2O.sub.3 film formed by using the microwave plasma is used
as at least a part of the gate insulating film, thereby improving
the properties of the gate insulating film. Therefore,
semiconductor devices with excellent properties can be
fabricated.
[0039] According to the semiconductor device, when the gate
insulating film is formed on the GaN layer, plasma is excited by
microwave plasma. Since the plasma used for processing has a
relatively low electron temperature, charging damage and other
damage to the GaN-containing nitride layer, which serves as a base
layer, can be significantly reduced. In addition, at least one film
selected from the group consisting of the SiO.sub.2 film formed by
using the microwave plasma and the Al.sub.2O.sub.3 film formed by
using the microwave plasma is used as at least a part of the gate
insulating film, thereby providing the semiconductor device with
excellent properties.
BRIEF DESCRIPTION OF DRAWINGS
[0040] FIG. 1 is a schematic cross sectional view showing a
relevant part of a plasma processing apparatus used in a method for
fabricating a semiconductor device according to an embodiment of
the present invention.
[0041] FIG. 2 shows a slot antenna plate in the plasma processing
apparatus of FIG. 1, as viewed in a through-thickness
direction.
[0042] FIG. 3 is a graph showing the relationship between distance
from a lower surface of a dielectric window and electron
temperature of plasma.
[0043] FIG. 4 is a graph showing the relationship between distance
from a lower surface of a dielectric window and electron density of
plasma.
[0044] FIG. 5 is a flowchart showing representative fabrication
steps of the method for fabricating the semiconductor device
according to the embodiment of the invention.
[0045] FIG. 6 is a schematic cross sectional view at the time when
a field oxide film has been formed through the method for
fabricating the semiconductor device according to the embodiment of
the invention.
[0046] FIG. 7 is a schematic cross sectional view at the time when
a resist layer has been formed through the method for fabricating
the semiconductor device according to the embodiment of the
invention.
[0047] FIG. 8 is a schematic cross sectional view at the time when
the field oxide film has been partially etched through the method
for fabricating the semiconductor device according to the
embodiment of the invention.
[0048] FIG. 9 is a schematic cross sectional view at the time when
a semiconductor has been partially etched through the method for
fabricating the semiconductor device according to the embodiment of
the invention.
[0049] FIG. 10 is a schematic cross sectional view at the time when
a resist layer has been removed through the method for fabricating
the semiconductor device according to the embodiment of the
invention.
[0050] FIG. 11 is a schematic cross sectional view at the time when
a gate insulating film has been formed through the method for
fabricating the semiconductor device according to the embodiment of
the invention.
[0051] FIG. 12 is a schematic cross sectional view at the time when
a gate electrode has been formed through the method for fabricating
the semiconductor device according to the embodiment of the
invention.
[0052] FIG. 13 is a schematic cross sectional view at the time when
an opening for an ohmic electrode has been formed through the
method for fabricating the semiconductor device according to the
embodiment of the invention.
[0053] FIG. 14 is a schematic cross sectional view at the time when
the ohmic electrode is formed in the method for fabricating the
semiconductor device according to the embodiment of the
invention.
[0054] FIG. 15 is a flowchart showing representative steps of
forming the gate insulating film through a method for fabricating
the semiconductor device according to another embodiment of the
invention.
[0055] FIG. 16 is a schematic cross sectional view showing a part
of a semiconductor device fabricated by a method for fabricating
the semiconductor device according to yet another embodiment of the
invention.
[0056] FIG. 17 is a schematic cross sectional view showing a part
of a semiconductor device fabricated by a method for fabricating
the semiconductor device according to yet another embodiment of the
invention.
[0057] FIG. 18 is a graph showing the relationship between gate
voltage and drain current.
[0058] FIG. 19 is a graph showing the relationship between channel
length and field effect mobility.
[0059] FIG. 20 is a graph showing I-V curves.
[0060] FIG. 21 is a graph showing measurement results of
secondary-ion mass spectrometry on a gate insulating film including
a SiO.sub.2 film formed by PECVD and a SiO.sub.2 film formed by an
ALD method.
[0061] FIG. 22 is a graph showing measurement results of
secondary-ion mass spectrometry on a gate insulating film including
a SiO.sub.2 film formed by only PECVD.
[0062] FIG. 23 is a graph showing C-V curves of a semiconductor
device fabricated through a fabrication method according to yet
another embodiment of the invention, the method not including
radical oxidation between formation of an Al.sub.2O.sub.3 film and
formation of a SiO.sub.2 film.
[0063] FIG. 24 is a graph showing C-V curves of a semiconductor
device fabricated through a fabrication method according to yet
another embodiment of the invention, the method including radical
oxidation between formation of an Al.sub.2O.sub.3 film and
formation of a SiO.sub.2 film for 20 seconds.
[0064] FIG. 25 is a graph showing C-V curves of a semiconductor
device fabricated through a fabrication method according to yet
another embodiment of the invention, the method including radical
oxidation between formation of an Al.sub.2O.sub.3 film and
formation of a SiO.sub.2 film for 20 seconds.
[0065] FIG. 26 is a graph showing C-V curves of a semiconductor
device fabricated through a fabrication method according to yet
another embodiment of the invention, the method including radical
oxidation between formation of an Al.sub.2O.sub.3 film and
formation of a SiO.sub.2 film for 7 minutes.
DESCRIPTION OF EMBODIMENTS
[0066] Embodiments of the present invention will be described below
with reference to the drawings. First, the structure and operation
of a plasma processing apparatus used in a method for fabricating a
semiconductor device according to an embodiment of the invention
will be described.
[0067] FIG. 1 is a schematic cross sectional view showing a
relevant part of the plasma processing apparatus used in the method
for fabricating a GaN-based semiconductor device according to the
embodiment of the present invention. FIG. 2 shows a slot antenna
plate in the plasma processing apparatus of FIG. 1, as viewed from
the bottom or in the direction of arrow II in FIG. 1. In order to
provide a clear understanding of the apparatus of FIG. 1, some
components of the apparatus are not hatched.
[0068] With reference to FIGS. 1 and 2, the plasma processing
apparatus 31 includes a chamber 32 in which a substrate W to be
processed undergoes plasma processing, a gas supplying section 33
that feeds plasma excitation gas, material gas used for plasma CVD
processes, deposition gas used to perform an atomic layer
deposition (ALD) method, which will be described later, and some
other types of gas into the chamber 32, a disc-like holding stage
34 on which the substrate W is held, a plasma generation mechanism
39 that generates plasma with use of microwaves in the chamber 32,
and a control unit (not shown) that controls the operation of the
entire plasma processing apparatus 31. The control unit controls
the operation of the entire plasma processing apparatus 31,
including the gas flow rate of the gas supplying section 33 and
pressure inside the chamber 32.
[0069] The chamber 32 has a bottom 41 positioned below the holding
stage 34 and a sidewall 42 upwardly extending from the rim of the
bottom 41. The sidewall 42 is roughly cylindrical. The chamber 32
has an exhaust hole 43 that penetrates a part of the bottom 41 to
discharge gas. The chamber 32 has an opening in the top and is
designed to be hermetically sealed by a cover 44 arranged on the
top of the chamber 32, a dielectric window 36, which will be
described later, and an O ring 45 that is a sealing member
interposed between the dielectric window 36 and the cover 44.
[0070] The gas supplying section 33 includes a first gas supplying
section 46 that blows gas toward the center of the substrate W to
be processed and a second gas supplying section 47 that blows gas
from the surroundings of the substrate W. The first gas supplying
section 46 has a gas supply hole 30 that introduces gas and is
positioned at the radially center of the dielectric window 36 and
at an inwardly recessed part relative to the lower surface 48,
which is an opposed surface to the holding stage 34, of the
dielectric window 36. The first gas supplying section 46 supplies
inert gas used to excite plasma, material gas, deposition gas and
so on at a flow rate adjusted by a gas supply system 49 that is
connected to the first gas supplying section 46. The second gas
supplying section 47 is composed of a plurality of gas supply holes
50 formed in an upper part of the sidewall 42 to introduce plasma
excitation gas, material gas, deposition gas and so on into the
chamber 32. The gas supply holes 50 are spaced uniformly along the
circumferential direction. The same kind of plasma excitation inert
gas, material gas, deposition gas or the like is supplied from the
same gas resource to the first and second gas supplying sections 46
and 47. Alternatively, according to the requirements and control
conditions, the first gas supplying section 46 and second gas
supplying section 47 can supply different types of gas at adjusted
flow rates.
[0071] An RF generator 58 for supplying RF (radio frequency) bias
is electrically connected to an electrode 61 in the holding stage
34 via a matching unit 59. This RF generator 58 can output, for
example, a high frequency of 13.56 MHz at a predetermined amount of
electric power (bias power). The matching unit 59 accommodates a
matching box that matches the impedance of the RF generator 58 and
the impedance of loads, mainly including the electrode 61, plasma,
and chamber 32. The matching box contains a blocking capacitor that
generates self-bias.
[0072] The holding stage 34 can hold the substrate W to be
processed thereon with an electrostatic chuck (not shown). In
addition, the holding stage 34 includes a heater (not shown) or the
like to apply heat and a temperature regulating mechanism 29 that
can set the holding stage 34 at a desired temperature. An
insulative cylindrical support section 51 extends upwardly from
below the bottom 41 in a vertical direction to support the holding
stage 34. The aforementioned exhaust hole 43 is formed so as to
penetrate a part of the bottom 41 of the chamber 32 along the outer
circumference of the cylindrical support section 51. The lower part
of the ring-like exhaust hole 43 is connected to an exhaust system
(not shown) via an exhaust pipe (not shown). The exhaust system
includes a vacuum pump such as a turbo-molecular pump. The pressure
inside the chamber 32 can be reduced to a predetermined pressure by
the exhaust system.
[0073] The plasma generation mechanism 39 is provided at an upper
part of and outside the chamber 32 and includes a microwave
generator 35 that generates microwaves to excite plasma, a
dielectric window 36 that is opposed to the holding stage 34 and
introduces the microwaves generated by the microwave generator 35
into the chamber 32, a slot antenna plate 37 that has a plurality
of slots 40 (see FIG. 2) formed therein, disposed on the upper side
of the dielectric window 36 and radiates the microwaves to the
dielectric window 36, and a dielectric member 38 that is disposed
on the upper side of the slot antenna plate 37 and radially
propagates the microwaves introduced through a coaxial waveguide 56
which will be described later.
[0074] The microwave generator 35 with the matching mechanism 53 is
connected to an upper part of the coaxial waveguide 56 for
introducing microwaves via a waveguide 55 and a mode transducer 54.
For example, a microwave propagating in TE mode, which is generated
by the microwave generator 35, passes through the waveguide 55, is
transduced into a microwave propagating in TEM mode by the mode
transducer 54, and propagates through the coaxial waveguide 56. A
selected frequency of the microwave generated by the microwave
generator 35 is, for example, 2.45 GHz.
[0075] The dielectric window 36 is roughly in the shape of a disc
that is made of a dielectric material. In a part of the lower
surface 48 of the dielectric window 36 formed is a ring-like recess
57 that tapers down to facilitate generation of a standing wave of
the introduced microwaves. With this recess 57, plasma can be
efficiently generated by the microwaves under the dielectric window
36. Specific materials of the dielectric window 36 are quartz,
alumina and so on.
[0076] The slot antenna plate 37 is in the shape of a thin disc.
The plurality of long slots 40 are arranged, as shown in FIG. 2, in
pairs, the slots 40 in each pair being orthogonal to each other as
if they form the shape of a letter T. The pairs of the slots 40 are
arranged in the circumferential direction at predetermined
spacings. The pairs of the slots 40 are also arranged in the radial
direction at predetermined spacings.
[0077] The microwave generated by the microwave generator 35 passes
through the coaxial waveguide 56 and propagates to the dielectric
member 38. The microwave spreads out radially in the dielectric
member 38, which is interposed between a cooling jacket 52 and the
slot antenna plate 37, and is radiated from the slots 40 formed in
the slot antenna plate 37 to the dielectric window 36. The cooling
jacket 52 includes a circulation path 60 therein through which a
coolant circulates in order to adjust the temperature of the
dielectric member 38 and other components. The microwave having
passed through the dielectric window 36 generates an electric field
immediately under the dielectric window 36 to generate plasma
inside the chamber 32. In short, the microwave plasma to be used
for processing in the plasma processing apparatus 31 is generated
in the chamber 32 with the microwave radiated from the radial line
slot antenna (RLSA) including the above-described cooling jacket
52, slot antenna plate 37, and dielectric member 38. Note that in
the following description, the plasma generated in the
above-described manner is occasionally referred to as RLSA
plasma.
[0078] FIG. 3 is a graph showing the relationship between distance
from the lower surface 48 of the dielectric window 36 in the
chamber 32 and electron temperature of plasma when the plasma is
generated in the plasma processing apparatus 31. FIG. 4 is a graph
showing the relationship between distance from the lower surface 48
of the dielectric window 36 in the chamber 32 and electron density
of plasma when the plasma is generated in the plasma processing
apparatus 31.
[0079] Referring to FIGS. 3 and 4, an area immediately under the
dielectric window 36, more specifically an area 26 up to
approximately 10 mm from the dielectric window 36, circled by a
dot-and-dash line in FIG. 3, is so-called a plasma generation area.
In this area 26, the electron temperature is high and the electron
density is greater than 1.times.10.sup.12 cm.sup.-3. On the other
hand, an area 27 over 10 mm from the lower surface 48, circled by a
dashed double-dotted line, is referred to as a plasma diffusion
area. In this area 27, the electron temperature is approximately
1.0 to 1.3 eV or lower than at least 1.5 eV, and the electron
density is approximately 1.times.10.sup.12 cm.sup.-3 or higher than
at least 1.times.10.sup.11 cm.sup.-3. The plasma processing
performed on the substrate W, which will be described later, is
conducted, for example, in the plasma diffusion area. It is
preferable to perform the plasma processing in the vicinity of the
surface of the substrate W by using the microwave plasma with an
electron temperature lower than 1.5 eV and an electron density
higher than 1.times.10.sup.11 cm.sup.-3.
[0080] The plasma processing apparatus 31 described above can
generate RLSA plasma with a high electron density and a low
electron temperature in the chamber 32 under a high pressure
condition, for example, at a pressure of 50 mTorr or higher. In
other words, with the RLSA plasma generated at a high pressure in
the chamber 32, the plasma processing can be performed at a
relatively low electron temperature and at a relatively high
electron density.
[0081] The plasma processing apparatus 31 having the
above-described structure is applicable to a plasma-enhanced ALD
apparatus, a plasma-enhanced CVD apparatus, and a plasma etching
apparatus. For example, the plasma processing apparatus 31 can etch
the substrate W with etching gas and plasma excitation gas supplied
from the gas supplying section under preferable predetermined
etching conditions.
[0082] Next, a method for fabricating a GaN-based semiconductor
device with the use of the aforementioned plasma processing
apparatus 31 will be described. FIG. 5 is a flowchart showing
representative steps of the method for fabricating the
semiconductor device according to an embodiment of the present
invention. FIGS. 6, 7, 8, 9, 10, 11, 12, 13 and 14 are schematic
cross sectional views showing a part of a semiconductor device
material or a semiconductor device in the representative steps of
the method for fabricating the semiconductor device according to
the embodiment of the invention. In order to provide a clear
understanding of the fabrication method, some components in FIGS. 6
to 14 are not hatched.
[0083] First, referring to FIGS. 5 and 6, a GaN layer 13 and an
AlGaN layer 14 are successively formed on a substrate 12, which is
a base made of Si (silicon), sapphire or the like, to prepare a
semiconductor device material 11. The GaN layer 13 and AlGaN layer
14 in this description form a heterojunction. The semiconductor
device including the semiconductor device material 11 is also
referred to as AlGaN/GaN hybrid MOS-HFET (Metal Oxide
Semiconductor-Heterojunction Field Effect Transistor). A step of
joining the GaN layer 13 and AlGaN layer 14 to form a semiconductor
layer is a step of forming a nitride layer containing GaN on a
substrate.
[0084] Then, a silicon oxide film (SiO.sub.2), which serves as a
field oxide film 15, is formed on the prepared semiconductor device
material 11, more specifically on the uppermost AlGaN layer 14
(FIG. 5 (A)). In this embodiment, a selected thickness of the field
oxide film 15 is, for example, 300 nm. The film thickness described
herein is concretely a thickness between the lower surface 16a and
upper surface 16b of the field oxide film 15 in the thickness
direction, more specifically is the distance A.sub.1 indicated
along the vertical direction in the drawing of FIG. 6. The field
oxide film 15 is formed, for example, by CVD under normal
pressures. The field oxide film 15 formed in the above manner is
annealed at 800.degree. C. for about 30 minutes to improve the film
quality.
[0085] Referring to FIG. 7, a resist layer 17 is formed over the
field oxide film 15 and is patterned by photolithography (FIG. 5
(B)). A material of the resist layer 17 is, for example, OFPR
800LB.
[0086] Referring to FIG. 8, the field oxide film 15 is etched using
the formed resist layer 17 as a mask (FIG. 5 (C)). The etching
performed on the field oxide film is so-called dry etching. An
etching gas used herein is, for example, a mixture gas of
C.sub.5F.sub.8 gas and O.sub.2 gas.
[0087] Referring to FIG. 9, the AlGaN layer 14 and GaN layer 13,
which serves as a semiconductor layer, is subsequently etched using
the formed resist layer 17 as a mask (FIG. 5 (D)). In this manner,
an opening 18 to be used to form a gate electrode later is formed.
The etching performed to form the opening is also dry etching. An
etching gas used herein is, for example, HBr gas. The opening is
formed so as to penetrate the AlGaN layer 14 in the thickness
direction and so as to etch an upper part of the GaN layer 13,
namely a part of the GaN layer 13 adjacent to the AlGaN layer 14 in
the thickness direction. The GaN layer 13 is preferably etched
about 10 nm in depth. In other words, in FIG. 9, the distance
A.sub.2 between a surface 16c of the GaN layer 13 exposed upward in
the opening 18 and a lower surface 16d of the AlGaN layer 14 in the
thickness direction is approximately 10 nm. After etched as
described above, the semiconductor device material is subjected to
ashing with oxygen (O.sub.2) gas. Note that the etching process
resultantly separates the AlGaN layer 14 into an AlGaN layer 14a on
the left of the drawing to be a source region later and an AlGaN
layer 14b on the right of the drawing to be a drain region
later.
[0088] Referring to FIG. 10, the formed resist layer 17 is removed
(FIG. 5 (E)). Removal of the resist layer 17 is made, for example,
by cleaning the resist layer 17, which is made of the
aforementioned materials, with SPM (Sulfuric acid Hydrogen Peroxide
Mixture), or by other removal techniques.
[0089] Next, as shown in FIG. 11, a gate insulating film 19 is
formed so as to cover an exposed surface 16e on the upper side of
the field oxide film 15 and surfaces of the opening 18, the
surfaces of the opening 18 including the surface 16c of the GaN
layer 13 exposed upwardly in the opening 18 and a surface 16f of
the sidewall of the opening 18 (FIG. 5 (F)). It may be preferable
to clean the exposed surfaces 16c, 16e, and 16f before formation of
the gate insulating film 19.
[0090] The gate insulating film 19 is formed by plasma-enhanced CVD
using microwave plasma in the above-described plasma processing
apparatus 31. A specific procedure will be described below.
[0091] Referring again to FIGS. 1 and 2, first, a semiconductor
device material 11, which is a substrate W to be processed, is held
by the action of an electrostatic chuck on the holding stage 34
placed in the chamber 32. Second, the gas supplying section 33
introduces inert gas, such as He gas, Ar gas, Xe gas, and Kr gas,
serving as plasma excitation gas with the application of a
predetermined amount of bias power. At this point, the pressure in
the chamber 32 is controlled to be appropriate for plasma
processing. Simultaneously, the temperature regulating mechanism 29
disposed in the holding stage 34 heats up the substrate W held on
the holding stage 34 to 400.degree. C. In this state, microwave
plasma is generated in the chamber 32. The generated microwave
plasma makes an area including the holding stage 34 into a plasma
diffusion area.
[0092] Then, a material gas is supplied to perform plasma-enhanced
CVD. The material gas is supplied through a gas supplying section
33. In this case, the material gas is mixed with plasma excitation
inert gas and supplied. In this manner, the plasma-enhanced CVD
using microwave plasma is performed.
[0093] The gate insulating film 19 formed herein is composed of a
SiO.sub.2 film. Specifically, the gate insulating film 19 is formed
by supplying a material gas containing silicon atoms and oxygen
atoms.
[0094] Subsequently, as shown in FIG. 12, a gate electrode 20 is
formed in the opening 18 so as to cover the gate insulating film 19
(FIG. 5 (G)). A material of the gate electrode 20 is, for example,
TaN (tantalum nitride). The gate electrode 20 is formed as follows:
first, a layer of the TaN is formed by a facing target sputtering
method so as to cover upwardly exposed surfaces, more specifically,
a surface 16g on the upper side of the gate insulating film, a
surface 16h on the sidewall of the opening 18, and a surface 16i on
the bottom of the opening 18. After a resist layer (not shown) is
subsequently formed over the upper layer, the resist layer is
patterned by photolithography. Then, the TaN layer is wet-etched
with an etchant, using the resist layer as a mask. In this manner,
the TaN layer remains at a position corresponding to the opening
18, thereby forming a gate electrode 20. By the way, the etchant
used herein is, for example, a mixed solution of HF (hydrofluoric
acid), HNO.sub.3 (nitric acid) and CH.sub.3COOH (acetic acid) with
a mixing ratio of HF:HNO.sub.3:CH.sub.3COOH=1:1:40.
[0095] Next, as shown in FIG. 13, openings 21a, 21b are formed that
are used to form ohmic electrodes which will be described later
(FIG. 5 (H)). The openings 21a, 21b are formed by wet etching with
LAL800. During the etching, predetermined parts of the gate
insulating film 19a formed on the field oxide film 15 and the field
oxide film 15 are etched. The gate insulating film 19a and the
field oxide film 15 are etched until surfaces 16i, 16j on the upper
side of the AlGaN layer 14 are exposed, thereby forming the
openings 21a, 21b.
[0096] Next, as shown in FIG. 14, ohmic electrodes 22a, 22b are
formed in the prepared openings 21a, 21b (FIG. 5 (I)). The ohmic
electrodes 22a, 22b are formed by filling the prepared openings
21a, 21b with a conductive material. Specifically, as with the case
of the formation of the gate electrode 20, a TaN layer is firstly
formed by a facing target sputtering method. Then, an Al (aluminum)
layer of approximately 300 nm is formed by an evaporation method.
Subsequently, photolithographic patterning and then wet etching are
performed. The etchant used to etch Al is, for example, a mixed
solution of H.sub.2PO.sub.3 (phosphoric acid), HNO.sub.3 (nitric
acid), CH.sub.3COOH (acetic acid) and H.sub.2O (water) with a
mixing ratio of
H.sub.2PO.sub.3:HNO.sub.3:CH.sub.3COOH:H.sub.2O=16:1:2:1. The
etchant used to etch TaN is, for example, the same etchant used to
form the gate electrode, that is, a mixed solution of HF
(hydrofluoric acid), HNO.sub.3 (nitric acid) and CH.sub.3COOH
(acetic acid) with a mixing ratio of
HF:HNO.sub.3:CH.sub.3COOH=1:1:40.
[0097] In this manner, the GaN-based semiconductor device 23a
according to the embodiment of the invention is fabricated. Of the
ohmic electrodes 22a, 22b formed on the right and left of the gate
electrode 20 in the drawing, the ohmic electrode 22a that is
provided on the left of the gate electrode 20 in the drawing with a
relatively short space therebetween in the lateral direction
functions as a source electrode and the AlGaN layer 14a under the
source electrode functions as a source region. On the other hand,
the ohmic electrode 22b that is provided on the right of the gate
electrode 20 in the drawing with a relatively long space
therebetween in the lateral direction functions as a drain
electrode and the AlGaN layer 14b under the drain electrode
functions as a drain region.
[0098] According to the method for fabricating the semiconductor
device, when the gate insulating film of the GaN-based
semiconductor device is formed on the GaN layer, plasma is excited
by microwave plasma. Since the plasma used for processing has a
relatively low electron temperature, electrical stress, such as
charging damage, and physical damage caused by ion irradiation to
the nitride layer containing GaN, which serves as a base layer, can
be significantly reduced. In addition, the use of a SiO.sub.2 film
formed by using microwave plasma as the gate insulating film can
improve the properties of the gate insulating film. Therefore, the
method can provide semiconductor devices with excellent properties.
Evaluation of the semiconductor devices with excellent properties
will be described later.
[0099] Furthermore, the GaN-based semiconductor device according to
the embodiment of the present invention is a semiconductor device
including GaN that composes a semiconductor layer and includes a
nitride layer including GaN that composes a semiconductor layer and
a gate insulating film formed on the nitride layer. The gate
insulating film in this embodiment includes a SiO.sub.2 film formed
by using microwave plasma.
[0100] Since the gate insulating film of the GaN-based
semiconductor device is formed on the GaN layer with plasma excited
by microwave plasma and is processed by using the microwave plasma
with a relatively low electron temperature, charging damage and
other damage to the nitride layer containing GaN, which serves as a
base layer, can be significantly reduced. In addition, the
SiO.sub.2 film formed by using the microwave plasma is used as the
gate insulating film. Therefore, the semiconductor device has
excellent properties.
[0101] In the aforementioned embodiment, it is preferable to supply
a material gas containing nitrogen oxides (NOx) during the CVD
process using microwave plasma. Using such a gas can add a very
small number of nitrogen (N) atoms into the SiO.sub.2 film to be
formed. The small number of nitrogen atoms can prevent Ga from
diffusing from the GaN layer to the SiO.sub.2 film. Therefore,
further improvement of film quality can be achieved.
[0102] Although the SiO.sub.2 film to be the gate insulating film
is formed by a CVD process using microwave plasma in the
aforementioned embodiment, the present invention is not limited
thereto, and the SiO.sub.2 film to be the gate insulating film can
be formed by an ALD method using microwave plasma. In short, an ALD
process using microwave plasma can be used to form the SiO.sub.2
film.
[0103] FIG. 15 is a flowchart showing representative steps of
forming the gate insulating film through a method for fabricating
the semiconductor device according to another embodiment of the
present invention. The flowchart of FIG. 15 corresponds to the step
of forming the gate insulating film (F) in the flowchart of FIG. 5.
The other steps in the method for fabricating the semiconductor
device according to this embodiment of the invention are identical
to the steps (A) to (E) and steps (G) to (I) in FIG. 5, and
therefore the explanations thereof will not be reiterated.
[0104] Referring to FIG. 15, the gate insulating film is formed by
an ALD process by using microwave plasma in the aforementioned
plasma processing apparatus 31. The ALD process begins with
application of deposition gas to a semiconductor device material
11, which will be a substrate W and has openings and so on (FIG. 15
(J)). The application of the deposition gas will be made from a gas
supplying section 33.
[0105] After the deposition gas is adsorbed to deposit a few atomic
layers, a first evacuation step of the deposition gas is carried
out (FIG. 15 (K)). Upon the completion of the deposition gas
evacuation, plasma excitation gas is introduced (FIG. 15 (L)). With
the generated microwave plasma, the adsorbed atom layers are
subjected to plasma processing. In this manner, a few atom layers
of SiO.sub.2 are deposited. Then, a second evacuation step of the
plasma excitation gas is carried out (FIG. 15 (M)). The gas
adsorption step, the first evacuation step, the plasma processing
step and the second evacuation step shown in FIG. 15 (J) to FIG. 15
(M) form one cycle, and a few cycles are carried out to obtain a
SiO.sub.2 film having a desired thickness.
[0106] The obtained SiO.sub.2 film, namely the SiO.sub.2 film
formed by ALD by using microwave plasma, can be denser than the
SiO.sub.2 film formed by the CVD method by using microwave plasma,
thereby improving a property required to semiconductor devices,
that is a leakage characteristic. Consequently, the ALD process
using microwave plasma can further improve the film quality.
[0107] Preferable deposition gas used to form the SiO.sub.2 film by
the ALD process is an aminosilane-based ALD film-forming material
which is a silicon dioxide film material containing N (nitrogen).
Such deposition gas can add a trace amount of N into the SiO.sub.2
film. The trace amount of N present in the film can prevent Ga in
the GaN layer from diffusing into the SiO.sub.2 film, i.e., the
gate insulating film. An example of the deposition gas contains
BTBAS (bis-tertiaryl-buthyl-amino-silane).
[0108] Although the SiO.sub.2 film is formed as a gate insulating
film in the aforementioned embodiment, the present invention is not
limited thereto, and, for instance, an Al.sub.2O.sub.3 (alumina)
film can be used instead of the SiO.sub.2 film. In short, at least
one film selected from the group consisting of the SiO.sub.2 film
and Al.sub.2O.sub.3 film may be formed in the step of forming the
gate insulating film.
[0109] Consequently, the method for fabricating the semiconductor
device according to the embodiment of the present invention is to
fabricate a semiconductor device including GaN (gallium nitride)
that composes a semiconductor layer and includes a step of forming
a gate insulating film, in the step at least one film selected from
the group consisting of a SiO.sub.2 film and an Al.sub.2O.sub.3
film being formed on a nitride layer containing GaN by using
microwave plasma and the formed film being used as the gate
insulating film.
[0110] The semiconductor device according to the embodiment of the
present invention is a semiconductor device including GaN that
composes a semiconductor layer and includes a nitride layer
including GaN that composes the semiconductor layer and a gate
insulating film formed on the nitride layer. The gate insulating
film includes at least one film selected from the group consisting
of a SiO.sub.2 film formed by using microwave plasma and an
Al.sub.2O.sub.3 film formed by using microwave plasma.
[0111] A study has been conducted of what materials are preferable
for the gate insulating film in the GaN-based semiconductor device
and the study results will be shown below. Possible materials for
the gate insulating film in the GaN-based semiconductor device are,
in addition to the aforementioned SiO.sub.2 and Al.sub.2O.sub.3,
SiNx such as Si.sub.3N.sub.4, AlN, GaOx such as Ga.sub.2O.sub.3,
Gd.sub.2O.sub.3, MgO, Sc.sub.2O.sub.3, HfO.sub.2, ZrO.sub.2 and
some other compounds. As described above, the gate insulating film
used in the GaN-based semiconductor device is required to have a
large conduction band offset (.DELTA.Ec). The gate insulating film
is also desired to have a high breakdown voltage. Si.sub.3N.sub.4,
Ga.sub.2O.sub.3, HfO.sub.2 and ZrO.sub.2 are reported to have a
band offset .DELTA.Ec of 1.3 eV, 0.46 eV, 1.09 eV and 1.1 eV,
respectively, which are relatively small. Ga.sub.2O.sub.3,
Gd.sub.2O.sub.3, MgO and Sc.sub.2O.sub.3 are reported to have a
breakdown voltage of 2.8 MV/cm, 0.1 or 3 MV/cm, 1.2 MV/cm and 0.7
MV/cm, respectively, which are relatively low. AlN in a crystalline
state has a relatively high breakdown voltage, approximately less
than 15 MV/cm, but AlN in an amorphous state has a relatively low
breakdown voltage, approximately 1.4 MV/cm. Therefore, SiO.sub.2
and Al.sub.2O.sub.3 are preferable as a material of the gate
insulating film in the GaN-based semiconductor device. In the above
described fabrication method, a film including SiO.sub.2 is formed
to use as a gate insulating film; however, a film including
Al.sub.2O.sub.3 can be formed to use as the gate insulating film
instead of the SiO.sub.2.
[0112] In addition, the gate insulating film can be a double-layer
gate insulating film in which a SiO.sub.2 film and an
Al.sub.2O.sub.3 film are stacked. FIG. 16 is a schematic
cross-sectional view of a GaN-based semiconductor device with a
double-layer gate insulating film and corresponds to the
cross-section of FIG. 14. In FIG. 16, like components are denoted
by like numerals as of FIG. 14 and therefore the explanations
thereof will not be reiterated.
[0113] Referring to FIG. 16, a semiconductor device 23b fabricated
by a method for fabricating the semiconductor device according to
yet another embodiment of the present invention includes a gate
insulating film 19b from between a GaN layer 13, which composes a
semiconductor layer, and a gate electrode 20 to between a field
oxide film 15 and the gate electrode 20. The gate insulating film
19b is composed of an Al.sub.2O.sub.3 film 24a that is an oxide
film adjacent to the GaN layer 13, which composes a semiconductor
layer, and the AlGaN layers 14a, 14b and a SiO.sub.2 film 24b that
is an oxide film adjacent to the gate electrode 20, in the vicinity
of the opening 18 as viewed vertically in the drawing. In short,
the gate insulating film 19b is a double-layer film composed of the
Al.sub.2O.sub.3 film 24a and SiO.sub.2 film 24b.
[0114] The double-layer gate insulating film can utilize the
advantages of the respective film properties, thereby satisfying
the requirements for the gate insulating film, and by extension the
semiconductor device. The gate insulating film is not limited to
the double-layer and can have three layers or more according to the
needs and requirements. In addition, the Al.sub.2O.sub.3 film and
SiO.sub.2 film can be replaced with each other in the vertical
direction. In other words, the Al.sub.2O.sub.3 film can be formed
after the SiO.sub.2 film has been formed.
[0115] In the case of using the double-layer gate insulating film,
the Al.sub.2O.sub.3 film may be formed by thermal ALD and the
SiO.sub.2 film may be formed by plasma-enhanced CVD. Thus, the
method for fabricating the semiconductor device according to the
embodiment of the invention includes a step of forming the gate
insulating film by forming a SiO.sub.2 film on a nitride layer
containing GaN by using microwave plasma and using the formed film
as a part of the gate insulating film. Specifically, the step of
forming the gate insulating film is a step of forming the
Al.sub.2O.sub.3 film by thermal ALD and forming the SiO.sub.2 film
by plasma-enhanced CVD. The method for fabricating the
semiconductor device can include such a step. In this case where
the gate insulating film includes an Al.sub.2O.sub.3 film formed by
thermal ALD and a SiO.sub.2 film formed by plasma-enhanced CVD by
using microwave plasma, and the SiO.sub.2 film formed by
plasma-enhanced CVD functions as a part of the gate insulating
film.
[0116] Specific process conditions when the Al.sub.2O.sub.3 film is
formed as a part of the gate insulating film by the thermal ALD are
shown as follows: temperature of the holding stage is 200 to
400.degree. C.; pressure inside the chamber is 0.1 to 1 Torr; flow
rate of oxygen is 5 to 30 slm; and flow rate of trimethylaluminium
(TMA) gas is 50 to 1000 sccm. Under the conditions, gas adsorption
is carried out. While oxygen is being supplied at the flow rate,
the pressure of the chamber is increased to 0.5 to 2 Torr, and
O.sub.3 (ozone) gas, i.e., an oxidant, of 100 to 500 g/Nm.sup.3 is
introduced to form a film. These steps form a cycle that takes
place for 5 to 120 seconds. This cycle of the thermal ALD is
repeated until the Al.sub.2O.sub.3 film reaches a desired
thickness.
[0117] Subsequently, a SiO.sub.2 film is formed as described above
by plasma-enhanced CVD by using microwave plasma on the
Al.sub.2O.sub.3 film formed by the thermal ALD to obtain a gate
insulating film including the Al.sub.2O.sub.3 film on the lower
side and the SiO.sub.2 film on the upper side and having a desired
thickness.
[0118] This process can avoid using plasma to form the
Al.sub.2O.sub.3 film. In addition, this process can reduce charging
damage or the like to the GaN layer positioned on the lower side of
the Al.sub.2O.sub.3 film during formation of the SiO.sub.2 film by
using microwave plasma.
[0119] The outermost surface of the Al.sub.2O.sub.3 film can be
subjected to radical oxidation by using microwave plasma for a
predetermined period of time between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film, in other
words, after the Al.sub.2O.sub.3 film is formed by thermal ALD and
before the SiO.sub.2 film is formed by plasma-enhanced CVD. In a
specific exemplary process, an Al.sub.2O.sub.3 film formed by
thermal ALD is placed in a plasma diffusion area created by using
microwave plasma for a predetermined period of time, and then,
material gas is introduced to form a SiO.sub.2 film by plasma CVD
process. This can further improve the film quality. Evaluation of
the thus fabricated semiconductor devices will be described
later.
[0120] In a case where the gate insulating film is designed to
include either one of the films, i.e., where a single-layer gate
insulating film is formed, the gate insulating film can be formed
by both plasma-enhanced ALD and plasma-enhanced CVD processes.
[0121] FIG. 17 is a schematic cross-sectional view of the GaN-based
semiconductor device with the single-layer gate insulating film and
corresponds to the cross sections of FIGS. 14 and 16. In FIG. 17,
like components are denoted by like numerals as of FIG. 14 and
therefore the explanations thereof will not be reiterated.
[0122] Referring to FIG. 17, a semiconductor device 23c fabricated
by a method according to yet another embodiment of the invention
includes a gate insulating film 19c from between a GaN layer 13,
which composes a semiconductor layer, and a gate electrode 20 to
between a field oxide film 15 and the gate electrode 20. The gate
insulating film 19c includes a SiO.sub.2 film 24c that is a first
oxide film formed by plasma-enhanced ALD adjacent to the GaN layer
13, which composes a semiconductor layer, and AlGaN layers 14a, 14b
and a SiO.sub.2 film 24d that is a second oxide film formed by
plasma-enhanced CVD adjacent to the gate electrode 20, in the
vicinity of the opening 18 as viewed vertically in the drawing. In
short, the gate insulating film 19c is a double-layer structure
film including the SiO.sub.2 film 24c formed by plasma-enhanced ALD
and the SiO.sub.2 film 24d formed by plasma-enhanced CVD. In FIG.
17, an approximate position of the interface between the SiO.sub.2
film 24c and SiO.sub.2 film 24d is indicated by a dotted line.
[0123] The semiconductor device designed as above has the following
advantages. The SiO.sub.2 film 24c formed by plasma-enhanced ALD
can suppress Ga diffusion from the GaN layer 13, while the
SiO.sub.2 film 24d formed at a faster deposition rate by
plasma-enhanced CVD can enhance the throughput.
[0124] The next description will be about evaluations on the
properties of the semiconductor devices fabricated by the methods
according to the invention. FIG. 18 is a graph showing the
relationship between gate voltage and drain current. The dotted
line in FIG. 18 represents a GaN-based semiconductor device with a
gate insulating film formed by CVD using CCP (capacitively-coupled
plasma), hereinafter abbreviated as CCP-PE (Plasma Enhanced) CVD.
The solid line in FIG. 18 represents a GaN-based semiconductor
device fabricated by the method according to one of the embodiments
of the invention, hereinafter abbreviated as RLSA-PECVD. In FIG.
18, the vertical axis represents drain current (A), while the
horizontal axis represents gate voltage (V). In measurement, the
semiconductor devices have a channel length Lch of 4 .mu.m and a
channel width Wch of 0.84 mm and a voltage Vds of 0.1 V is applied
between the drain and source of the semiconductor devices. The
relationship between the gate voltage and drain current shown in
FIG. 18 presents the current leakage characteristic. It is
preferable that application of a small gate voltage induces a large
drain current flow, and in the case of the graph in FIG. 18, it is
preferable that the lines vertically rise when the gate voltage Vg
is slightly higher than 0 V, this rise demonstrating the excellent
driving cap ability.
[0125] Referring to FIG. 18, in the case of the semiconductor
device formed by CCP-PECVD, application of approximately 5V gate
voltage finally causes drain current to start flowing and the drain
current then moderately increases with an increase of the gate
voltage. On the contrary, in the case of the semiconductor device
formed by RLSA-PECVD, application of approximately 3V gate voltage
causes drain current to start flowing and the drain current then
steeply increases with an increase of the gate voltage.
[0126] The results in FIG. 18 demonstrate that the semiconductor
device formed by RLSA-PECVD is superior to the semiconductor device
formed by CCP-PECVD.
[0127] FIG. 19 is a graph showing the relationship between channel
length (Lch) and field effect mobility. In FIG. 19, hollow diamonds
represent the semiconductor device formed by CCP-PECVD, while black
diamonds represent the semiconductor device formed by RLSA-PECVD.
In FIG. 19, the vertical axis represents field effect mobility
(cm.sup.2/Vs), while the horizontal axis represents channel length
(.mu.m). In measurement, the voltage Vds applied between the drain
and source of the measured semiconductor devices is 0.1 V. The
relationship between the channel length and field effect mobility
in FIG. 19 demonstrates that a semiconductor device with higher
field effect mobility at predetermined channel lengths is
superior.
[0128] FIG. 19 shows that the semiconductor device formed by
RLSA-PECVD exhibits higher field effect mobility than that by
CCP-PECVD at respective channel lengths, 10 nm, 20 nm or longer.
The results in FIG. 19 also demonstrate that the semiconductor
device formed by RLSA-PECVD is superior to the semiconductor device
formed by CCP-PECVD.
[0129] The graphs so far show that the PEALD process is more
preferable than PECVD process to form the gate insulating film.
FIG. 20 is a graph showing I-V curves representing so-called J-E
characteristics. In FIG. 20, the vertical axis represents current J
per unit area (A/cm.sup.2), while the horizontal axis represents
voltage (MV/cm). In measurement, the area to be measured is defined
as 4.52.times.10.sup.-4 cm.sup.2, and the thickness of the
semiconductor device formed by PEALD is 15.9 nm and by PECVD is
63.8 nm. Regarding the J-E characteristics shown in FIG. 20, it is
preferable that voltage and current establish a nearly direct
proportional relationship and the proportional relationship is
maintained even if a high voltage is applied, that is, electrical
breakdown does not occur.
[0130] Referring to FIG. 20, in the case of the semiconductor
device formed by PEALD indicated by a solid line in FIG. 20, the
current value starts increasing at around a voltage of 6 MV/cm, the
graph line rises, and the current value ascends with application of
the voltage while maintaining the nearly direct proportional
relationship. On the contrary, in the case of the semiconductor
device formed by PECVD indicated by a dotted line in FIG. 20, the
current value starts increasing at almost the same voltage of 6
MV/cm and the graph line rises, but the current value then ascends
so as to draw a wavy line. In addition, a phenomenon that seems
like electrical breakdown occurs at around a voltage of 12 MV/cm.
The results in FIG. 20 demonstrate that the oxide film formed by
PEALD is superior to the oxide film formed by PECVD.
[0131] FIG. 21 is a graph showing the measurement results of
secondary-ion mass spectrometry (SIMS) on a gate insulating film
including a SiO.sub.2 film formed by PECVD and a SiO.sub.2 film
formed by PEALD. FIG. 22 is a graph showing the measurement results
of secondary-ion mass spectrometry on a gate insulating film
including a SiO.sub.2 film formed by PECVD alone. Both the gate
insulating films shown in FIGS. 21 and 22 include a SiO.sub.2 film
with a thickness of 60 nm. In FIGS. 21 and 22, the vertical axis
represents intensity (cps), while the horizontal axis represents
measured depth (nm) from a set reference position. In FIGS. 21 and
22, the solid line represents Si (silicon), the dotted line
represents O (oxygen), and the dot-and-dash line represents Ga
(gallium).
[0132] In FIGS. 21 and 22, a left area with respect to a dotted
line is an area where the formed gate insulating film, or a
SiO.sub.2 film, is disposed, while a right area with respect to the
dotted line is an area where a GaN layer is disposed. Specifically,
the position of 0 nm along the horizontal axis in FIG. 21
corresponds to the position A.sub.3 in the gate oxide film in FIG.
17, the position of 0 nm along the horizontal axis in FIG. 22
corresponds to the position A.sub.3 in the gate oxide film in FIG.
14, and the measured depth becomes greater in the direction of
arrows A.sub.4 from the positions A.sub.3. The vertically-extending
dotted line roughly represents the interface between the SiO.sub.2
film and GaN layer and corresponds to the surface 16k in FIGS. 17
and 14.
[0133] Referring to FIG. 21, the gate insulating film with a 20-nm
SiO.sub.2 film formed by PEALD and a 40-nm SiO.sub.2 film formed by
PECVD has Ga intensity at a level of about 1.times.10.sup.2 in the
area where the SiO.sub.2 is present. On the contrary, referring to
FIG. 21, the gate insulating film with a 60-nm SiO.sub.2 film
formed by only PECVD has Ga intensity at a level of about
1.times.10.sup.3 in the area where the SiO.sub.2 is present. In
comparison with the gate insulating film including the 20-nm
SiO.sub.2 formed by PEALD and the 40-nm SiO.sub.2 formed by PECVD,
the diffusion degree of Ga of the gate insulating film including
the 60-nm SiO.sub.2 formed by PECVD alone is an order of magnitude
greater. Therefore, it is preferable to use PEALD to form the
SiO.sub.2 film at the interface between the GaN layer and SiO.sub.2
film in order to suppress Ga diffusion to the formed SiO.sub.2
film.
[0134] In the case where the gate insulating film is formed to have
the double-layer structure including an Al.sub.2O.sub.3 film formed
by thermal ALD and a SiO.sub.2 film formed by plasma-enhanced CVD,
it is advantageous in terms of film quality improvement to perform
radical oxidation by using microwave plasma on the outermost
surface of the Al.sub.2O.sub.3 film for a predetermined period of
time between formation of the Al.sub.2O.sub.3 film and formation of
the SiO.sub.2 film. The outermost surface of the Al.sub.2O.sub.3
film described herein is the top surface of the Al.sub.2O.sub.3
film in contact with the SiO.sub.2 film and corresponds to the
surface 16m in FIG. 16.
[0135] FIGS. 23, 24, 25 and 26 are graphs showing the C-V
characteristics of semiconductor devices fabricated by the methods
according to yet other embodiments of the present invention. The
semiconductor devices in FIGS. 23 to 26 have a gate insulating film
including a 5-nm Al.sub.2O.sub.3 film formed on the upper surface
of a GaN layer by thermal ALD and a 60-nm SiO.sub.2 film formed on
the upper surface of the Al.sub.2O.sub.3 film by plasma-enhanced
CVD. FIG. 23 shows the C-V characteristics of the semiconductor
device formed without radical oxidation between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film. FIG. 24
shows the C-V characteristics of the semiconductor device formed
with 20-second radical oxidation between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film. FIG. 25
shows the C-V characteristics of the semiconductor device formed
with 3-minute radical oxidation between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film. FIG. 26
shows the C-V characteristics of the semiconductor device formed
with 7-minute radical oxidation between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film. In FIGS.
23 to 26, the vertical axis represents C/Cox ratio, while the
horizontal axis represents gate voltage Vg (V). The measurement was
conducted under the following conditions: environment temperature
was 150.degree. C.; frequency was 1 MHz; measured area was
4.52.times.10.sup.-4 cm.sup.2; and gate voltage ranged from -20 V
to +20 V. A preferable line of C/Cox values plotted along the
vertical axis is desired to increase without inflection points so
as to draw a moderate curve with an increase of voltage applied to
the gate electrode. A gate insulating film that exhibits such a
curve is considered to have an excellent leakage characteristic and
therefore have excellent film quality.
[0136] Referring to FIG. 23 in the case where radical oxidation has
not been performed at all, a minor inflection point is seen in the
area circled by a dot-and-dash line in FIG. 23, more specifically,
in the area within which Vg is approximately -4.0 to -3.0 V and
C/Cox is 0.7 to 0.8. Referring to FIG. 25 in the case where radical
oxidation has been performed for three minutes, a minor inflection
point is also seen in almost the same area circled by a
dot-and-dash line in FIG. 23. Referring to FIG. 26 in the case
where radical oxidation has been performed for seven minutes, a
major inflection point is seen in the area circled by a
dot-and-dash line in FIG. 26, more specifically in the area within
which Vg is approximately -12.0 to -8.0 V and C/Cox is 0.7 to
0.8.
[0137] On the other hand, in the case where radical oxidation has
been performed for 20 seconds with reference to FIG. 24, any
recognizable inflection point is not seen in the graph, but the
C/Cox value increases so as to draw a moderate curve with an
increase of voltage applied to the gate electrode. In this
embodiment, therefore, it is preferable to perform radical
oxidation for approximately 20 seconds between formation of the
Al.sub.2O.sub.3 film and formation of the SiO.sub.2 film. It is
noted that the period of time required for radical oxidation is
determined based on the thickness of the Al.sub.2O.sub.3 film and
SiO.sub.2 film to be formed and some other factors.
[0138] Although the GaN-based semiconductor device in the
above-described embodiments is an AlGaN/GaN hybrid MOS-HFET device,
the present invention is not limited thereto, and can be applied to
semiconductor devices with a single-layer GaN semiconductor layer
or heterojunction hybrid MOS-HFET devices composed of a GaN layer
and the other kind of gallium compound.
[0139] Although the plasma processing in the above-described
embodiments is performed by using microwave plasma with an electron
temperature of lower than 1.5 eV and an electron density of higher
than 1.times.10.sup.11 cm.sup.-3, the present invention is not
limited thereto and can be used in areas where the electron density
of plasma is lower than 1.times.10.sup.11 cm.sup.-3.
[0140] Although the plasma processing in the above-described
embodiments is performed with microwaves generated by an RLSA using
a slot antenna plate, the present invention is not limited thereto
and can use a microwave plasma processing apparatus having a comb
antenna or a microwave plasma processing apparatus that radiates
microwaves from its slots to generate surface wave plasma.
[0141] The foregoing has described the embodiments of the present
invention by referring to the drawings. However, the invention
should not be limited to the illustrated embodiments. It should be
appreciated that various modifications and changes can be made to
the illustrated embodiments within the scope of the appended claims
and their equivalents.
REFERENCE SIGNS LIST
[0142] 11: semiconductor device material; 12: substrate; 13: GaN
layer; 14, 14a, 14b: AlGaN layer; 15: field oxide film; 16a, 16b,
16c, 16d, 16e, 16f, 16g, 16h, 16i, 16j, 16k, 16m: surface; 17:
resist layer; 18, 21a, 21b: opening; 19, 19a, 19b, 19c: gate
insulating film; 20: gate electrode; 22a, 22b: ohmic electrode;
23a, 23b, 23c: semiconductor device, 24a: Al.sub.2O.sub.3 film;
24b, 24c, 24d: SiO.sub.2 film; 26, 27: area; 29: temperature
regulating mechanism; 31: plasma processing apparatus; 32: chamber;
33, 46, 47: gas supplying section; 34: holding stage; 35: microwave
generator; 36: dielectric window; 37: slot antenna plate; 38:
dielectric member; 39: plasma generation mechanism; 40: slot; 41:
bottom; 42: sidewall; 43: exhaust hole; 44: cover, 45: O ring; 48;
lower surface, 49 gas supply system; 30, 50: gas supply hole; 51:
cylindrical support section; 52: cooling jacket; 53: matching
mechanism; 54: mode transducer; 55: waveguide; 56: coaxial
waveguide; 57 recess, 58: RF generator, 59: matching unit; 60:
circulation path; 61: electrode.
* * * * *