U.S. patent application number 13/721983 was filed with the patent office on 2014-02-06 for semiconductor package and method for fabricating base for semiconductor package.
This patent application is currently assigned to Media Tek Inc.. The applicant listed for this patent is MEDIA TEK INC.. Invention is credited to Andrew C. CHANG, Wen-Sung HSU, Tzu-Hung LIN, Ta-Jen YU.
Application Number | 20140035095 13/721983 |
Document ID | / |
Family ID | 50979426 |
Filed Date | 2014-02-06 |
United States Patent
Application |
20140035095 |
Kind Code |
A1 |
LIN; Tzu-Hung ; et
al. |
February 6, 2014 |
SEMICONDUCTOR PACKAGE AND METHOD FOR FABRICATING BASE FOR
SEMICONDUCTOR PACKAGE
Abstract
The invention provides a semiconductor package and a method for
fabricating a base for a semiconductor package. The semiconductor
package includes a conductive trace embedded in a base. A
semiconductor device is mounted on the conductive trace via a
conductive structure.
Inventors: |
LIN; Tzu-Hung; (Zhubei City,
TW) ; HSU; Wen-Sung; (Zhubei City, TW) ; YU;
Ta-Jen; (Taichung City, TW) ; CHANG; Andrew C.;
(Hsinchu City, TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
MEDIA TEK INC. |
Hsin-Chu |
|
TW |
|
|
Assignee: |
Media Tek Inc.
Hsin-Chu
TW
|
Family ID: |
50979426 |
Appl. No.: |
13/721983 |
Filed: |
December 20, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61677835 |
Jul 31, 2012 |
|
|
|
Current U.S.
Class: |
257/528 ;
156/150; 156/247; 156/248; 216/14; 257/737; 257/750; 257/782;
29/25.01 |
Current CPC
Class: |
H01L 24/13 20130101;
H01L 2224/81191 20130101; H01L 2224/16237 20130101; H01L 23/49541
20130101; H01L 2221/68345 20130101; H01L 24/16 20130101; H01L 21/48
20130101; H01L 24/81 20130101; H01L 28/00 20130101; H01L 2224/13083
20130101; H01L 21/4857 20130101; H01L 2224/0401 20130101; H01L
2924/12042 20130101; H01L 23/49827 20130101; H01L 21/6835 20130101;
H01L 2224/05571 20130101; H01L 23/498 20130101; H01L 2224/16238
20130101; H01L 2224/1308 20130101; H01L 2924/00012 20130101; H01L
2224/05572 20130101; H01L 2224/81385 20130101; H01L 2224/73204
20130101; H01L 23/49822 20130101; H01L 23/49811 20130101; H01L
2924/00 20130101; H01L 2924/12042 20130101 |
Class at
Publication: |
257/528 ;
257/750; 257/737; 257/782; 156/247; 156/248; 156/150; 216/14;
29/25.01 |
International
Class: |
H01L 49/02 20060101
H01L049/02; H01L 23/498 20060101 H01L023/498; H01L 21/48 20060101
H01L021/48 |
Claims
1. A semiconductor package, comprising: a conductive trace embedded
in a base; and a semiconductor device mounted on the conductive
trace via a conductive structure.
2. The semiconductor package as claimed in claim 1, wherein the
conductive trace has a width which is larger than 5 nm.
3. The semiconductor package as claimed in claim 1, wherein the
conductive trace has a top surface above, below or aligned to a
surface of the base.
4. The semiconductor package as claimed in claim 1, further
comprising: an underfill between the semiconductor device and the
base.
5. The semiconductor package as claimed in claim 3, further
comprising: an insulation layer having an opening disposed on the
base, above the top surface of the conductive trace, wherein the
conductive trace is exposed within the opening.
6. The semiconductor package as claimed in claim 1, wherein the
conductive structure contacts the conductive trace.
7. The semiconductor package as claimed in claim 1, wherein the
conductive structure contacts a top surface of the conductive trace
only.
8. The semiconductor package as claimed in claim 1, wherein the
conductive structure wraps around a top surface and a portion of a
sidewall of the conductive trace.
9. The semiconductor package as claimed in claim 1, wherein the
conductive structure is connected to at least a portion of the
base.
10. The semiconductor package as claimed in claim 1, wherein the
conductive structure comprises a conductive pillar structure, a
conductive wire structure, or a conductive paste structure.
11. The semiconductor package as claimed in claim 10, wherein the
conductive pillar structure is composed of a metal stack comprising
an under bump metallurgy (UBM) layer, a copper layer, and a solder
cap.
12. The semiconductor package as claimed in claim 11, wherein the
conductive pillar structure further comprises a conductive buffer
layer between the copper layer and the solder cap.
13. The semiconductor package as claimed in claim 4, wherein the
underfill comprises capillary underfill (CUF), molded underfill
(MUF), nonconductive paste (NCP), nonconductive film (NCF) or a
combination thereof.
14. The semiconductor package as claimed in claim 1, wherein the
semiconductor device comprises a die, a passive component, a
package or a wafer level package.
15. The semiconductor package as claimed in claim 1, wherein the
conductive structure comprises a copper bump or solder bump
structure.
16. The semiconductor package as claimed in claim 1, wherein the
base comprises a single layer structure or a multilayer
structure.
17. A semiconductor package, comprising: a conductive trace, having
a bottom surface and at least a portion of a sidewall connected to
a base; and a semiconductor device mounted on the conductive trace
via a conductive structure.
18. A method for fabricating a base for a semiconductor package,
comprising: providing a carrier with conductive seed layers on a
top surface and a bottom surface of the carrier; forming first
conductive traces respectively on the conductive seed layers;
laminating a first base material layer and a second base material
layer respectively on the conductive seed layers, covering the
first conductive traces; forming second conductive traces
respectively on first surfaces of the first base material layer and
the second base material layer, wherein the first surfaces of the
first base material layer and the second base material layer are
respectively away from the top surface and the bottom surface of
the carrier; and separating the first base material layer
containing the first and second conductive traces thereon and the
second base material layer containing the first and second
conductive traces thereon from the carrier to form a first base and
a second base.
19. The method for fabricating a base for a semiconductor package
as claimed in claim 18, further comprising: performing a drilling
process to form openings through the first base material layer and
the second base material layer; and performing a plating process to
fill a conductive material into the opening to form a via for
interconnecting the first conductive traces to the second
conductive traces, before forming the second conductive traces.
20. The method for fabricating a base for a semiconductor package
as claimed in claim 19, wherein the drilling process comprises a
laser drilling process, an etching drilling process or a mechanical
drilling process, and the plating process comprises an electrical
plating process.
21. The method for fabricating a base for a semiconductor package
as claimed in claim 18, wherein the first conductive traces and the
second conductive traces are formed by a plating process and an
anisotropic etching process.
22. The method for fabricating a base for a semiconductor package
as claimed in claim 18, further comprising: removing conductive
seed layers from the first base and the second base.
23. The method for fabricating a base for a semiconductor package
as claimed in claim 18, further comprising: forming insulation
layers having openings respectively on the first and second bases,
wherein the first conductive traces of the first and second bases
are exposed within the openings.
24. The method for fabricating a base for a semiconductor package
as claimed in claim 18, wherein the first conductive traces of the
first and second bases are aligned to second surfaces of the of the
first and second bases, and wherein the second surfaces are
respectively opposite to the first surfaces of the first and second
bases.
25. The method for fabricating a base for a semiconductor package
as claimed in claim 18, wherein the first conductive traces have a
width which is larger than 5 nm.
26. A method for fabricating a semiconductor package, comprising:
providing a base; forming at least one conductive trace on the
base; forming an additional insulation material on the base; and
defining patterns upon the additional insulation material, wherein
the pattern is formed on at least once conductive trace.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the benefit of U.S. Provisional
Application No. 61/677,835, filed on Jul. 31, 2012, the entirety of
which is incorporated by reference herein.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a semiconductor package and
a method for fabricating a base for a semiconductor package, and in
particular, to a base for a high density semiconductor package.
[0004] 2. Description of the Related Art
[0005] In order to ensure miniaturization and multi-functionality
of electronic products or communication devices, semiconductor
packages are desired to be small in size, to support multi-pin
connection, to support high speeds, and to support high
functionality. The demand for increasing Input-Output (I/O) pin
counts and high-performance ICs has led to the development of flip
chip packages.
[0006] Flip-chip technology uses bumps on a chip to interconnect to
a package substrate. The flip-chip is bonded face down to the
package substrate through the shortest path. The technology used
can be applied not only to a single-chip package, but also to
higher or integrated levels of packaging in which the packages are
larger and packaged with more sophisticated substrates that
accommodate several chips to form larger functional units. The
flip-chip technique, using an area array, can achieve a high
density interconnection with devices and a very low inductance
interconnection with packaging. However, this requires printed
circuit board (PCB) fabricators to minimize line widths and space
or to develop direct chip attach (DCA) semiconductors. Accordingly,
the increased amount of input/output connections of a
multi-functional flip-chip package may induce thermal electrical
problems, for example, problems with heat dissipation, cross talk,
signal propagation delay, electromagnetic interference for RF
circuits, etc. The thermal electrical problems may affect the
reliability and quality of products.
[0007] Thus, a novel high-density flip chip package and a printed
circuit board for a high-density flip chip package are
desirable.
BRIEF SUMMARY OF INVENTION
[0008] A semiconductor package and a method for fabricating a base
for a semiconductor package are provided. An exemplary embodiment
of a semiconductor package includes a conductive trace embedded in
a base. A semiconductor device is mounted on the conductive trace
via a conductive structure.
[0009] Another exemplary embodiment of a semiconductor package
includes a conductive trace, having a bottom surface and at least a
portion of a sidewall connected to a base. A semiconductor device
is mounted on the conductive trace via a conductive structure.
[0010] An exemplary embodiment of a method for fabricating a base
for a semiconductor package includes providing a carrier with
conductive seed layers on a top surface and a bottom surface of the
carrier. First conductive traces are respectively formed on the top
surface and the bottom surface of the carrier, connecting to the
conductive seed layers. A first base material layer and a second
base material layer are respectively laminated on the top surface
and the bottom surface of the carrier, covering the first
conductive traces. Second conductive traces are respectively formed
on first surfaces of the first base material layer and the second
base material layer, wherein the first surfaces of the first base
material layer and the second base material layer are respectively
away from the top surface and the bottom surface of the carrier.
The first base material layer with the first and second conductive
traces thereon and the second base material layer with the first
and second conductive traces thereon are separated from the carrier
to form a first base and a second base.
[0011] Another exemplary embodiment of a method for fabricating a
semiconductor package includes providing a base, forming a
conductive trace on the base, further forming an additional
insulation material on the base, and further defining patterns upon
the additional insulation material, wherein the pattern is formed
on at least one conductive trace.
[0012] A detailed description is given in the following embodiments
with reference to the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
[0013] The invention can be more fully understood by reading the
subsequent detailed description and examples with references made
to the accompanying drawings, wherein:
[0014] FIGS. 1 to 4 show cross sections of various exemplary
embodiments of a semiconductor package of the invention.
[0015] FIGS. 5a to 5e are cross sections showing one exemplary
embodiment of a method for fabricating a base for a semiconductor
package of the invention.
[0016] FIGS. 6a to 6e are cross sections showing another exemplary
embodiment of a method for fabricating a semiconductor package of
the invention.
DETAILED DESCRIPTION OF INVENTION
[0017] The following description is a mode for carrying out the
invention. This description is made for the purpose of illustrating
the general principles of the invention and should not be taken in
a limiting sense. The scope of the invention is best determined by
reference to the appended claims. Wherever possible, the same
reference numbers are used in the drawings and the descriptions to
refer the same or like parts.
[0018] The present invention will be described with respect to
particular embodiments and with reference to certain drawings, but
the invention is not limited thereto and is only limited by the
claims. The drawings described are only schematic and are
non-limiting. In the drawings, the size of some of the elements may
be exaggerated and not drawn to scale for illustrative purposes.
The dimensions and the relative dimensions do not correspond to
actual dimensions to practice of the invention.
[0019] FIGS. 1 to 4 show cross sections of various exemplary
embodiments of a semiconductor package of the invention. In this
embodiment, the semiconductor package can be a flip chip package
using conductive structures, for example, copper pillar bumps,
connecting a semiconductor device to a base. Alternatively, the
semiconductor package can be a package using wire bonding
technology to connect a semiconductor device to a base. FIG. 1
shows a partial cross section of one exemplary embodiment of a
semiconductor package 500a of the invention. Please refer to FIG.
1, wherein the semiconductor package 500a comprises a base 200
having a device attach surface 214. In one embodiment, the base
200, for example, a print circuit board (PCB), may be formed of
polypropylene (PP). It should be also noted that the base 200 can
be a single layer or a multilayer structure. A plurality of
conductive traces 202a is embedded in the base 200. In one
embodiment, the conductive traces 202a may comprise signal trace
segments or ground trace segments, which are used for input/output
(I/O) connections of a semiconductor device 300 mounted directly
onto the base 200. Therefore, each of the conductive traces 202a
has a portion serving as a pad region of the base 200. In this
embodiment, the conductive traces 202a are designed to have a width
which is larger than 5 nm. However, it should be noted that there
is no limitation on the width of the conductive traces. For
different designs, the width of the conductive traces can be
smaller than 5 nm if required.
[0020] A semiconductor device 300 is mounted on the device attach
surface 214 of the base 200 with an active surface of the
semiconductor device 300 facing the base 200 by a bonding process.
In one embodiment, the semiconductor device 300 may comprise a die,
a passive component, a package or a wafer level package. In this
embodiment, the semiconductor device 300 is a flip chip package. A
circuitry of the semiconductor device 300 is disposed on the active
surface, and metal pads 304 are disposed on a top of the circuitry.
The circuitry of the semiconductor device 300 is interconnected to
the circuitry of the base 200 via a plurality of conductive
structures 222 disposed on the active surface of the semiconductor
device 300. However, it should be noted that the conductive
structures 222 shown in FIG. 1 is only an example and is not a
limitation to the present invention.
[0021] As shown in FIG. 1, the semiconductor device 300 may include
a body 301, metal pads 304 overlying the semiconductor body 301,
and an insulation layer 302 covering the metal pads 304. In this
embodiment, the semiconductor body 301 may include but is not
limited to a semiconductor substrate, circuit elements fabricated
on the main surface of the semiconductor substrate, inter-layer
dielectric (ILD) layers and an interconnection structure. In one
embodiment, the interconnection structure may comprise a plurality
of metal layers, a plurality of dielectric layers alternatively
laminated with the metal layers and a plurality of vias formed
through the dielectric layers on the semiconductor substrate. The
metal pads 304 comprise the topmost metal layer of the metal layers
of the interconnection structure. In one embodiment, the insulation
layer 302 may be a single layer structure or a multilayer
structure, and the insulation layer 302 may comprise but is not
limited to silicon nitride, silicon oxide, silicon oxynitride,
polyimide or any combination thereof. Also, the insulation layer
302 may have functions of stress buffering and insulation. In one
embodiment, the metal pad 304 may comprise but is not limited to
aluminum, copper or alloys thereof. A plurality of openings can be
formed in the insulation layer 302. Each of the openings exposes at
least a portion of one of the metal pads 304.
[0022] As shown in FIG. 1, the conductive structure 222 may
comprise a conductive bump structure such as a copper bump or a
solder bump structure, a conductive wire structure, or a conductive
paste structure. In this embodiment, the conductive structure 222
may be a copper bump structure composed of a metal stack comprising
a UBM (under bump metallurgy) layer 306, a copper layer 216 such as
a plated copper layer, a conductive buffer layer 218, and a solder
cap 220. In one embodiment, the UBM layer 306 can be formed on the
exposed metal pads 304 within the openings by a deposition method
such as a sputtering or plating method and a subsequent anisotropic
etching process. The anisotropic etching process is performed after
forming conductive pillars. The UBM layer 306 may also extend onto
a top surface of the insulation layer 302. In this embodiment, the
UBM layer 306 may comprise titanium, copper or a combination
thereof. A copper layer 216 such as an electroplated copper layer
can be formed on the UBM layer 306. The opening can be filled with
the copper layer 216 and the UBM layer 306, and the copper layer
216 and the UBM layer 306 within the opening may form an integral
plug of the conductive structure 222. A formation position of the
copper layer 216 is defined by a dry film photoresist or liquid
photoresist patterns (not shown).
[0023] A solder cap 220 can be formed on the copper layer 216 by
electroplating a solder with a patterned photoresist layer or by a
screen printing process and a subsequent solder re-flow process. A
conductive buffer layer 218 formed of Ni may be formed between the
copper layer 216 and the solder cap 220 by an electroplating
method. The conductive buffer layer 218 may serve as a seed layer,
adhesion layer and barrier layer for the solder cap 220 formed
thereon. In this embodiment, the conductive structure 222, such as
a conductive pillar structure, is used as a solder joint for the
metal pad 304, which transmits input/output (I/O), ground or power
signals of the semiconductor device 300 formed thereon. Therefore,
the copper layer 216 of the conductive structure 222 may help to
increase the mechanical strength of the bump structure. In one
embodiment, an underfill material or the underfill 230 can be
introduced into the gap between the semiconductor device 300 and
the base 200. In one embodiment, the underfill 230 may comprises a
capillary underfill (CUF), molded underfill (MUF) or a combination
thereof.
[0024] In one embodiment, the conductive traces may have a top
surface disposed above, below or aligned to a surface of the base
to improve routing ability for high-density semiconductor packages.
As shown in FIG. 1, the conductive traces 202a have top surfaces
212a disposed below a device attach surface 214 of the base 200.
That is to say, a bottom surface 206a and at least a portion of a
sidewall 204a of the conductive trace 202a are designed to be
connected to the base 200. In this embodiment, the solder cap 220
of the conductive structure 222 is disposed to contact with a
portion of the base 200 and to connect to a top surface 212a of the
conductive trace 202a only. Due to the top surfaces of the
conductive traces being recessed from the device attach surface 214
of the base 200, the bump-to-trace space is increased and the
problem of bump-to-trace bridging can be effectively avoided.
[0025] FIG. 2 shows a partial cross section of another exemplary
embodiment of a semiconductor package 500b of the invention.
Elements of the embodiments that are the same or similar as those
previously described with reference to FIG. 1, are hereinafter not
repeated for brevity. In this embodiment, conductive traces 202b of
the semiconductor package 500b embedded in the base 200 may have a
top surface 212b designed to be aligned to a device attach surface
214 of the base 200 to improve routing ability for high-density
semiconductor packages. That is to say, a bottom surface 206b and a
sidewall 204b of the conductive trace 202b are designed to be fully
connected to the base 200. Therefore, the solder cap 220 of the
conductive structure 222 is disposed on the device attach surface
214 of the base 200, contacting the top surface 212b of the
conductive trace 202b only.
[0026] FIG. 3 shows a partial cross section of yet another
exemplary embodiment of a semiconductor package 500c of the
invention. Elements of the embodiments that are the same or similar
as those previously described with reference to FIGS. 1 and 2, are
hereinafter not repeated for brevity. In this embodiment,
conductive traces 202c of the semiconductor package 500c embedded
in the base 200 may have a top surface 212c designed above a device
attach surface 214 of the base 200 to improve routing ability for
high-density semiconductor packages. That is to say, a bottom
surface 206c and only a portion of a sidewall 204c of the
conductive trace 202c are designed to be connected to the base 200.
Therefore, the solder cap 220 of the conductive structure 222 is
disposed on the device attach surface 214 of the base 200, wrapping
a top surface 212c and only a portion of the sidewall 204c of the
conductive trace 202c.
[0027] FIG. 4 shows a partial cross section of still another
exemplary embodiment of a semiconductor package 500d of the
invention. Elements of the embodiments that are the same or similar
as those previously described with reference to FIGS. 1-3, are
hereinafter not repeated for brevity. In one embodiment, the base
may comprise a single layer structure as shown in FIGS. 1-3.
Alternatively, the base may comprise a multilayer structure. In
this embodiment, conductive traces 202d of the semiconductor
package 500d embedded in the base portion 200a may have a top
surface 212d designed to be aligned to a surface 214 of the base
portion 200a to improve routing ability for high-density
semiconductor packages. That is to say, a bottom surface 206d and a
sidewall 204d of the conductive trace 202d are designed to be
connected to the base portion 200a. Also, an insulation layer 208
having openings 210 is disposed on the base portion 200a. The
insulation layer 208 is disposed above the device attach surface
214 of the conductive trace 202d. In this embodiment, the base
portion 200a and the insulation layer 208 collectively serve as a
multilayer base. As shown in FIG. 4, the conductive traces 202d are
exposed within the openings 210. Therefore, the solder cap 220 of
the conductive structure 222 is formed through a portion of the
insulation layer 208, contacting a top surface 212d of the
conductive trace 202d only. It should be noted that it is not
necessary for the insulation layer 208 to align with the sidewall
204d of the conductive traces 202d. Instead, it can be designed to
be distanced outward or inward from the sidewall 204d of the
conductive traces 202d as shown in FIG. 4.
[0028] FIGS. 5a to 5d are cross sections showing one exemplary
embodiment of a method for fabricating two bases 200c and 200d for
a semiconductor package of the invention. In this embodiment, the
method for fabricating bases for a semiconductor package is also
called a double-sided base fabricating process. Elements of the
embodiments that are the same or similar as those previously
described with reference to FIGS. 1-4, are hereinafter not repeated
for brevity. As shown in FIG. 5a, a carrier 400 with conductive
seed layers 402a and 402b on a top surface 401 and a bottom surface
403 is provided. In one embodiment, the carrier 400 may comprise
FR4 glass epoxy or stainless steel. Also, the conductive seed
layers 402a and 402b are used as seed layers for subsequently
formed interconnection conductive traces of bases on the top
surface 401 and the bottom surface 403 of the carrier 400. In one
embodiment, the conductive seed layers 402a and 402b may comprise
copper.
[0029] Next, as shown in FIG. 5b, first conductive traces 404a and
404b are respectively formed on the top surface 401 and the bottom
surface 403 of the carrier 400. Bottom portions of the first
conductive traces 404a and 404b connect to top portions of the
conductive seed layers 402a and 402b. In one embodiment, the first
conductive traces 404a and 404b may be formed by a plating process
and an anisotropic etching process. The plating process and the
anisotropic etching process are simultaneously performed on the top
surface 401 and the bottom surface 403 of the carrier 400. In one
embodiment, the plating process may comprise an electrical plating
process. In one embodiment, the first conductive traces 404a and
404b may comprise copper. In one embodiment, the first conductive
traces 404a and 404b are designed to have a width which is larger
than 5 .mu.m. However, it should be noted that there is no
limitation on the width of the conductive traces. For different
designs, the width of the conductive traces can be smaller than 5
.mu.m if required. In this embodiment, the anisotropic etching
process may precisely control the width of the first conductive
traces 404a and 404b.
[0030] Next, as shown in FIG. 5c, a laminating process is performed
to respectively dispose a first base material layer 406a and a
second base material layer 406b on the top surface 401 and the
bottom surface 403 of the carrier 400, wherein the first base
material layer 406a and a second base material layer 406b
respectively cover the first conductive traces 404a and 404b. In
this embodiment, the laminating process of the first base material
layer 406a and the second base material layer 406b is
simultaneously performed on the on the top surface 401 and the
bottom surface 403 of the carrier 400. In one embodiment, the first
base material layer 406a and the second base material layer 406b
may comprise polypropylene (PP).
[0031] Next, please refer to FIG. 5c again, wherein a drilling
process is performed to form openings (not shown) through the first
base material layer 406a and the second base material layer 406b to
define the formation positions of subsequently formed vias 408a and
408b. In one embodiment, the drilling process may comprise a laser
drilling process, an etching drilling process or a mechanical
drilling process. Next, a plating process is performed to fill a
conductive material into the openings to form vias 408a and 408b
for interconnecting the first conductive traces 404a and 404b to
subsequent second conductive traces 410a and 410b. In this
embodiment, the drilling process and the plating process are
simultaneously performed on the first base material layer 406a and
the second base material layer 406b, respectively.
[0032] Next, please refer to FIG. 5c again, wherein a plurality of
second conductive traces 410a and 410b are respectively formed on a
first surface 412 of the first base material layer 406a and a first
surface 414 of the second base material layer 406b. As shown in
FIG. 5c, the first surface 412 of the first base material layer
406a and the first surface 414 of the second base material layer
406b are respectively away from the top surface 401 and the bottom
surface 403 of the carrier 400. The second conductive traces 410a
and 410b are formed by a plating process and an anisotropic etching
process. The plating process and the anisotropic etching process
are simultaneously performed on the first surface 412 of the first
base material layer 406a and the first surface 414 of the second
base material layer 406b. In one embodiment, the plating process
may comprise an electrical plating process. In one embodiment, the
second conductive traces 410a and 410b may comprise copper. In one
embodiment, the second conductive traces 410a and 410b are designed
to have a width which is larger than 5 nm. However, it should be
noted that there is no limitation on the width of the conductive
traces. For different designs, the width of the conductive traces
can be smaller than 5 nm if required. In this embodiment, the
anisotropic etching process may precisely control the width of the
second conductive traces 410a and 410b.
[0033] Next, as shown in FIG. 5d, the first base material layer
406a with the first and second conductive traces 404a and 410a
thereon and the second base material layer 406b with the first and
second conductive traces 404b and 410b thereon are respectively
separated from the top surface 401 and the bottom surface 403 of
the carrier 400 to form a first base 200c and a second base 200d
which are separated from each other. Next, as shown in FIG. 5d
again, the conductive seed layers 402a and 402b are removed from
the first base 200c and the second base 200d, respectively.
[0034] As shown in FIGS. 5d and 5e, the first conductive traces
404a and 404b are aligned to second surfaces 416 and 418 of the of
the first and second bases 200c and 200d, which are respectively
opposite to the first surfaces 412 and 414. In this embodiment, the
first base 200c and the second base 200d are simultaneously
fabricated on opposite surfaces (the top surface 401 and the bottom
surface 403) by the double-sided base fabricating process.
[0035] Alternatively, two passivation or insulation layers (not
shown) having openings may be optionally formed respectively on a
second surface 416 of the first base 200c and the second surface
418 of the second base 200d after the separation of the first base
200c and the second base 200d as shown in FIGS. 5d and 5e. In this
embodiment, the first conductive traces 404a and 404b of the first
and second bases 200c and 200d are exposed within the opening.
Positions of the insulation layer with openings and the first
conductive traces 404a/404b as shown in FIG. 5d/5e can be similar
to the insulation layer 208 with openings 210 and the conductive
traces 202d as shown in FIG. 4. Also, in this embodiment, the first
base 200a/second base 200b and the insulation layer thereon
collectively serve as a multilayer base.
[0036] FIGS. 6a to 6e are cross sections showing another exemplary
embodiment of a method for making a semiconductor package of the
invention. Also, FIG. 6e shows a cross section of another exemplary
embodiment of a semiconductor package 500e of the invention.
Elements of the embodiments that are the same or similar as those
previously described with reference to FIGS. 1-4 and 5a-5e, are
hereinafter not repeated for brevity. Alternatively, the base may
have a multilayer structure. As shown in FIG. 6a, a base 450 with a
top surface 451 is provided. Next, as shown in FIG. 6b, at least
one conductive trace 454 is formed on the top surface 451 of the
base 450. In one embodiment, the conductive trace 454 may be formed
by a plating process and an anisotropic etching process. In one
embodiment, the plating process may comprise an electrical plating
process. In one embodiment, the conductive trace 454 may comprise
copper. In one embodiment, the conductive trace 454 is designed to
have a width which is larger than 5 nm. However, it should be noted
that there is no limitation on the width of the conductive traces.
For different designs, the width of the conductive traces can be
smaller than 5 nm if required. In this embodiment, the anisotropic
etching process may precisely control the width of the conductive
trace 454.
[0037] Next, as shown in FIG. 6c, a laminating process is performed
to respectively dispose an additional insulation material 456 on
the top surface 451 of the base 450. Also, the additional
insulation material 456 covers a top surface 460 and sidewalls 462
of the conductive trace 454.
[0038] Next, please refer to FIG. 6d, wherein a drilling process is
performed to form at least one opening 458 through the additional
insulation material 456 to define formation of a position of a
subsequently formed conductive structure, for example, a copper
bump structure or a solder bump structure. In one embodiment, the
drilling process may comprise a laser drilling process, an etching
drilling process or a mechanical drilling process. In this
embodiment, the top surface 460 of the conductive trace 454 is
exposed within the opening 458 of the additional insulation
material 456.
[0039] Next, as shown in FIG. 6e, a bonding process is performed to
mount a semiconductor device 300 on the base 450 through the
conductive structure 222. Elements of the semiconductor device 300
and the conductive structure 222 that are the same or similar as
those previously described with reference to FIGS. 1-4, are
hereinafter not repeated for brevity. After the bonding process,
the conductive structures 222 are disposed through the opening 458
of the additional insulation material 456, contacting to the top
surface 460 of the conductive trace 454 only. Next, an underfill
material or the underfill 230 can be introduced into the gap
between the semiconductor device 300 and the additional insulation
material 456. In one embodiment, the underfill 230 may comprises a
capillary underfill (CUF), molded underfill (MUF) or a combination
thereof. Finally, the base 450, the additional insulation material
456, the semiconductor device 300, the conductive trace 454, and
the conductive structure 222 collectively form a semiconductor
package 500e.
[0040] Exemplary embodiments provide a semiconductor package. The
semiconductor package is designed to comprise conductive trace
embedded in a base, for example, a print circuit board (PCB). The
conductive traces may have a top surface disposed above, below or
aligned to a surface of the base to improve routing ability for
high-density semiconductor packages. Also, the conductive traces
are designed to have a width which is larger than 5 nm. Further,
the base may comprise a single layer structure or a multilayer
structure. Exemplary embodiments also provide a method for
fabricating a base for a semiconductor package. In one embodiment,
the method can fabricate two bases on two sides of a carrier
simultaneously. Also, the conductive traces may be embedded in the
base. Further, the conductive trace may be formed by a plating
process and an anisotropic etching process, and the anisotropic
etching process may precisely control the width of the conductive
trace. Alternatively, the method can fabricate a base comprising a
single layer structure or a multilayer structure to improve design
capability.
[0041] While the invention has been described by way of example and
in terms of the preferred embodiments, it is to be understood that
the invention is not limited to the disclosed embodiments. On the
contrary, it is intended to cover various modifications and similar
arrangements (as would be apparent to those skilled in the art).
Therefore, the scope of the appended claims should be accorded the
broadest interpretation so as to encompass all such modifications
and similar arrangements.
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