U.S. patent application number 14/045081 was filed with the patent office on 2014-01-30 for alternate pad structures/passivation integration schemes to reduce or eliminate imc cracking in post wire bonded dies during cu/low-k beol processing.
This patent application is currently assigned to LSI CORPORATION. Invention is credited to Hemanshu Bhatt, Chi-Yi Kao, Jayanthi Pallinti, Sey-Shing Sun, Dilip Vijay, Hong Ying.
Application Number | 20140030541 14/045081 |
Document ID | / |
Family ID | 38052695 |
Filed Date | 2014-01-30 |
United States Patent
Application |
20140030541 |
Kind Code |
A1 |
Bhatt; Hemanshu ; et
al. |
January 30, 2014 |
ALTERNATE PAD STRUCTURES/PASSIVATION INTEGRATION SCHEMES TO REDUCE
OR ELIMINATE IMC CRACKING IN POST WIRE BONDED DIES DURING CU/LOW-K
BEOL PROCESSING
Abstract
Passivation integration schemes and pad structures to reduce the
stress gradients and/or improve the contact surface existing
between the Al in the pad and the gold wire bond. One of the pad
structures provides a plurality of recessed pad areas which are
formed in a single aluminum pad. An oxide mesa can he provided
under the aluminum pad. Another pad structure provides a single
recessed pad area which is formed in a single aluminum pad, and the
aluminum pad is disposed above a copper pad and a plurality of
trench/via pads. Still another pad structure provides a single
recessed pad area which is formed in a single aluminum pad, and the
aluminum pad is disposed above a portion of a copper pad, such that
the aluminum pad and the copper pad are staggered relative to each
other.
Inventors: |
Bhatt; Hemanshu; (Vancouver,
WA) ; Vijay; Dilip; (San Jose, CA) ; Pallinti;
Jayanthi; (San Jose, CA) ; Sun; Sey-Shing;
(Portland, OR) ; Ying; Hong; (Cupertino, CA)
; Kao; Chi-Yi; (San Jose, CA) |
Assignee: |
LSI CORPORATION
San Jose
CA
|
Family ID: |
38052695 |
Appl. No.: |
14/045081 |
Filed: |
October 3, 2013 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11283219 |
Nov 18, 2005 |
8552560 |
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14045081 |
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Current U.S.
Class: |
428/601 ;
216/18 |
Current CPC
Class: |
H01L 24/03 20130101;
H01L 2924/01013 20130101; H01L 2924/01073 20130101; Y10T 428/12396
20150115; H01L 2224/48624 20130101; H01L 2924/01006 20130101; H01L
2924/351 20130101; H01L 2224/05624 20130101; H01L 2224/05556
20130101; H01L 2224/05073 20130101; H01L 24/48 20130101; H01L
2924/01033 20130101; H01L 2924/01014 20130101; H01L 2224/48463
20130101; H01L 2924/351 20130101; H01L 2224/48624 20130101; H01L
2924/01079 20130101; H01L 2224/05647 20130101; H01L 2924/05042
20130101; H01L 2924/0105 20130101; H01L 2224/48453 20130101; H01L
2924/181 20130101; H01L 24/05 20130101; H01L 2224/05624 20130101;
H01L 2224/05558 20130101; H01L 2924/01082 20130101; H01L 2224/04042
20130101; H01L 2224/05009 20130101; H01L 2224/45144 20130101; H01L
2924/00 20130101; H01L 2924/00014 20130101; H01L 2224/48647
20130101; H01L 2224/05647 20130101; H01L 2224/48647 20130101; H01L
2924/01074 20130101; H01L 2924/01029 20130101; H01L 2924/01019
20130101; H01L 2924/01075 20130101; H05K 3/107 20130101; H01L
2224/48463 20130101; H01L 24/45 20130101; H01L 2924/01022 20130101;
H01L 2924/181 20130101; H01L 2224/02166 20130101; H01L 2224/05553
20130101; H01L 2924/01327 20130101; H01L 2924/04953 20130101; H01L
2224/45144 20130101; H01L 2924/01005 20130101; H01L 2224/48507
20130101; H05K 1/0271 20130101; H01L 2924/00 20130101; H01L
2924/00014 20130101; H01L 2924/00 20130101; H01L 2924/00 20130101;
H01L 2924/00014 20130101; H01L 2924/00014 20130101 |
Class at
Publication: |
428/601 ;
216/18 |
International
Class: |
H05K 1/02 20060101
H05K001/02; H05K 3/10 20060101 H05K003/10 |
Claims
1. A pad structure comprising: a copper pad; a single aluminum pad
above the copper pad; at least one recessed pad area formed in the
aluminum pad, said aluminum pad being disposed above trench/via
pads which are disposed proximate the copper pad; a first layer
along an entire bottom surface of the aluminum pad and in contact
with a top surface of each trench/via pad; and a second layer along
an entire top surface of the copper pad and in contact with both
the trench/via pads and portions of the first layer.
2. A pad structure comprising: at least one copper pad; an aluminum
pad above the copper pad; at least one recessed pad area formed in
the aluminum pad, wherein the copper pad and the aluminum pad are
staggered relative to each other; a first layer along an entire
bottom surface of the aluminum pad and in contact with a top
surface of each recessed pad area; and a second layer along an
entire top surface of the copper pad and in contact with both the
recessed pad areas and portions of the first layer.
3. A pad structure as recited in claim 2, wherein the aluminum pad
is above a single copper pad, as opposed to a plurality of copper
pads being disposed below the aluminum pad.
4. A passivation scheme for forming a pad structure which includes
at least one copper pad, an aluminum pad above the copper pad, and
a plurality of recessed pad areas formed in the aluminum pad, said
passivation scheme comprising: providing a multiple-layer stack
which includes the copper pad and a dielectric layer above the
copper pad; masking the stack; etching the stack such that a
plurality of slots are formed in the dielectric layer, above the
copper pad; depositing aluminum in the slots; and masking and
etching the stack to form a plurality of recessed pad areas in the
aluminum, wherein the pad structure comprises at least one copper
pad; an aluminum pad above the copper pad; at least one recessed
pad area formed in the aluminum pad, wherein the copper pad and the
aluminum pad are staggered relative to each other; a first layer
along an entire bottom surface of the aluminum pad and in contact
with a top surface of each recessed pad area; and a second layer
along an entire top surface of the copper pad and in contact with
both the recessed pad areas and portions of the first layer.
5. A passivation scheme as recited in claim 4, further comprising
forming and oxide mesa between the copper pad and the aluminum pad,
wherein the oxide mesa is disposed between two of the recessed pad
areas formed in the aluminum pad.
6. A passivation scheme as recited in claim 4, further comprising
providing a dielectric layer between the copper pad and the
aluminum pad, wherein the dielectric layer is disposed between two
of the recessed pad areas formed in the aluminum pad.
7. A passivation scheme as recited in claim 4, further comprising
providing that the aluminum pad is above a single copper pad, as
opposed to a plurality of copper pads being disposed below the
aluminum pad.
8. A passivation scheme for forming a pad structure which includes
an oxide mesa, a single aluminum pad above the oxide mesa,
trench/via pads disposed proximate the oxide mesa, and at least one
recessed pad area formed in the aluminum pad, said passivation
scheme comprising: providing a multiple-layer stack which includes
the oxide mesa, the trench/via pads disposed proximate the copper
pad, and a dielectric layer above, the oxide mesa; masking the
stack; etching the stack such that at least one slot is formed in
the dielectric layer, above the oxide mesa; depositing aluminum in
the at least one slot; and masking and etching the stack to form at
least one recessed pad area in the aluminum, Wherein the pad
structure comprises a copper pad; a single aluminum pad above the
copper pad; at least one recessed pad area formed in the aluminum
pad, said aluminum pad being disposed above trench/via pads which
are disposed proximate the copper pad; a first layer along an
entire bottom surface of the aluminum pad and in contact with a top
surface of each trench/via pad; and a second layer along an entire
top surface of the copper pad and in contact with both the
trench/via pads and portions of the first layer.
9. A passivation scheme for forming a pad structure which includes
at least one copper pad; an aluminum pad above the copper pad, and
at least one recessed pad area formed in the aluminum pad, wherein
the copper pad and the aluminum pad are staggered relative to each
other, said passivation scheme comprising: providing a
multiple-layer stack which includes the copper pad and a dielectric
layer above the copper pad; masking the stack; etching the stack
such that at least one slot is formed in the dielectric layer,
above the copper pad; depositing aluminum in the at least one slot;
and masking and etching the stack to form at least one recessed pad
area in the aluminum, wherein the pad structure comprises at least
one copper pad; an aluminum pad above the copper pad; at least one
recessed pad area formed in the aluminum pad, wherein the copper
pad and the aluminum pad are staggered relative to each other; a
first layer along an entire bottom surface of the aluminum pad and
in contact with a top surface of each recessed pad area; and a
second layer along an entire top surface of the copper pad and in
contact with both the recessed pad areas and portions of the first
layer.
10. A passivation scheme as recited in claim 9, further comprising
providing that the aluminum pad is above a single copper pad, as
opposed to a plurality of copper pads being disposed below the
aluminum pad.
11. A pad structure as recited in claim 1, further comprising an
oxide mesa disposed between two of the trench/via pads and being
disposed under the single recessed pad area.
Description
[0001] This application is a divisional of U.S. patent application
Ser. No. 11/283,219, filed on Nov. 18, 2005.
BACKGROUND
[0002] The present invention generally relates to wire bonds, and
more specifically relates to pad structures and passivation schemes
to reduce or eliminate MC cracking in post wire bonded dies during
Cu/Low-K BEOL processing.
[0003] It has been observed that some post wire bonded dies that
have undergone Cu/Low-K metallization show signature of `open`
fails after several hours of HTS (high temperature storage),
Failure analysis on such parts shows cracks at the interface of
intermetallic compound (IMC) and gold bond. FIG. 1 shows an X-SEM
of a bonded die with IMC cracking.
[0004] Historically, MC cracking in Au--Al wirebonds have been
attributed to several causes including contamination on the surface
of the Al-pads, incompatible film properties of the Al-films,
presence of halides in the molding compounds, excessive levels of
voids in the molding compounds and poorly optimized bonding and
molding conditions. However, in the case of wire bond devices with
Cu/Low-k metallization, the cracking of IMC persists despite
careful control of the above-mentioned factors. Through a
cumulative set of deductive experiments and use advanced analytical
techniques, it has been determined that the cracking of IMC wire
bond devices with Cu/Low-k metallization is a strong function of
the tensile stresses in the film. It has been found that the
unusually high tensile stresses generated in the Cu/Low-K stacks
can drive excessive diffusion of Al into the Au bonds leading to
very thick and Al-rich IMC phases. The unstable Al-rich phases
eventually undergo reverse phase transformations to Au-rich phases;
the associated volume change (very large .about.30%) in such phase
transformations can result in voiding and eventual cracking of the
IMC. The way to prevent this issue then is to tailor the stresses
in the Cu/Low-K stacks so that the Al-diffusion rates are
controlled to a low enough level that the stable Au-rich phases are
formed preferably when compared to Al-rich phases. This will
prevent any tendencies for phase transformation in the system.
Stress Build-Up:
[0005] The present invention addresses the stress related issues
that cause the IMC cracking and methods to eliminate the IMC
cracking by controlling the macro stresses in the wafer. During
Cu/Low-k processing, it has been found that there is cumulative
stress buildup in wafers due to intrinsic stresses in metal and
dielectric films and due to various thermal cycles. Thermal
stresses are generated due to a mismatch between the temperature
coefficients of expansion between metal, dielectric films and
substrate, as illustrated in the following table:
TABLE-US-00001 Coefficient of thermal expansion for various film
Material (per degree Celsius) Al 2.2E-05 Cu 1.7E-05 Ti/TiN 9.0E-06
Ta/TaN 6.0E-06 Si #.0E-06 SiO.sub.2 5.5E-07
[0006] Intrinsic stresses are generated during deposition. The
stress state can be evaluated with freestanding films (or films on
flexible substrates). Some general observations regarding stresses
in thin films is provided below for reference:
[0007] 1. Tensile: typically, an upward curve is generated due to
repulsive forces between tapered grains in zone 1 structure formed
by evaporation or sputtering with high pressure and low power.
[0008] 2. Compressive: typically, a downward curve is generated due
to atomic peening of crystal grains by reflected neutrals during
sputtering.
[0009] 3. Metals with Body Centered Cubic (BCC) structure, e.g., W,
Ta (mostly refractory metals), can have extremely high compressive
stress due to open lattice that allows atoms to be easily
displaced.
[0010] 4. Metals with Face Centered Cubic (FCC) structure, e.g.,
Cu, Al and Au (most noble metals), have very little intrinsic
stress (low re-crystallization temperature).
[0011] 5. Dielectric (CVD) films can be tensile or compressive
depending on deposition parameters, e.g., temperature and plasma
power.
[0012] The macro stresses in the wafer can be measured by measuring
the bow in the wafer and translating the values to stresses through
Poisson's equations. In general, a positive wafer gap during the
wafer bow measurement indicates tensile stresses in the wafers and
a negative wafer gap indicates compressive stresses. FIG. 2 shows a
normalized graph with stress accumulated on a wafer at various
stages in the BEOL Cu/Low-k wafer processing.
[0013] It is evident from FIG. 2 that the tensile stresses on the
wafer keep increasing in the wafer as more and more metallization
steps are added to the film and the wafer experiences maximum
tensile stress during deposition of the Aluminum pad. Aluminum and
copper are known to contribute to tensile stresses, while the
dielectric films can contribute to tensile or compressive stresses
based on deposition conditions like temperature, time, etc. As the
tensile stresses in the wafer build-up, the wafer can bow due to
the warpage or macro stress distributions from the center to the
edge of the wafer. However, the local stress distribution in the
Aluminum pads is harder to characterize.
OBJECTS AND SUMMARY
[0014] An object of an embodiment of the present invention is to
provide a passivation integration scheme and pad structure which
provides for more uniform IMC formation and increased surface
area.
[0015] Another object of an embodiment of the present invention is
to provide a passivation integration scheme and pad structure which
provides for a reduction in IMC crack initiation and propagation
between the Al--Au interface and for improved reliability of wire
bonded parts with Cu/Low-K metallization.
[0016] Briefly, and in accordance with at least one of the
foregoing objects, the present invention is directed at providing
passivation integration schemes and pad structures to reduce the
stress gradients and/or improve the contact surface existing
between the Al in the pad and the gold wire bond. One of the pad
structures which is in accordance with an embodiment of the present
invention provides a plurality of recessed pad areas which are
formed in a single aluminum pad. An oxide mesa can be provided
under the aluminum pad. Another pad structure which is in
accordance with an embodiment of the present invention provides a
single recessed pad area which is formed in a single aluminum pad,
and the aluminum pad is disposed above a copper pad and a plurality
of trench/via pads. Still another pad structure which is in
accordance with an embodiment of the present invention provides a
single recessed pad area which is formed in a single aluminum pad,
and the aluminum pad is disposed above a portion of a copper pad,
such that the aluminum pad and the copper pad are staggered
relative to each other.
BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The organization and manner of the structure and operation
of the invention, together with further objects and advantages
thereof, may best be understood by reference to the following
description, taken in connection with the accompanying drawing,
wherein:
[0018] FIG. 1 is an X-SEM of a bonded die, showing IMC
cracking;
[0019] FIG. 2 is a graph which shows normalized stress on a wafer
at various metallization steps in the Cu/Low-k steps, wherein a
positive value for stress indicates tensile stress and a negative
value for stress indicates compressive stress;
[0020] FIG. 3 provides cross-sectional views relating to a prior
art passivation scheme, wherein aluminum pads are defined post R2
module;
[0021] FIG. 4 provides a cross-sectional view relating to the prior
art passivation scheme, wherein a passivation 2 stack is deposited
and a pad area is opened for bonding;
[0022] FIG. 5 provides cross-sectional views relating to a
passivation scheme which is in accordance with an embodiment of the
present invention, wherein a plurality of oxide slots are formed in
pad areas, post R2 module;
[0023] FIG. 6 provides cross-sectional views relating to the
passivation scheme which is in accordance with an embodiment of the
present invention, wherein a plurality of slots are formed in an
aluminum pad;
[0024] FIG. 7 provides a cross-sectional view relating to the
passivation scheme which is in accordance with an embodiment of the
present invention, wherein a passivation 2 stack is deposited and a
pad area is opened for bonding;
[0025] FIG. 8 is a block flow diagram which illustrates a
passivation scheme which can be used to obtain the pad structure
shown in FIG. 7;
[0026] FIG. 9 provides a cross-sectional view relating to a pad
structure which is in accordance with another embodiment of the
present invention, wherein an oxide mesa is formed under the
aluminum pad;
[0027] FIG. 10 provides a cross-sectional view relating to a pad
structure which is in accordance with still another embodiment of
the present invention, wherein a single slot is formed in the
aluminum pad, but the aluminum pad is above a plurality of copper
pads;
[0028] FIG. 11 provides a top view of a wafer, wherein the pad
structure shown in FIG. 10 is used in association with peripheral
vias;
[0029] FIG. 12 provides a top view of a wafer, wherein the pad
structure shown in FIG. 10 is used in association with peripheral
trenches;
[0030] FIG. 13 is a block flow diagram which illustrates a
passivation scheme which can be used to obtain the pad structure
shown in FIG. 10;
[0031] FIG. 14 provides a cross-sectional view relating to a pad
structure which is in accordance with still another embodiment of
the present invention, wherein an aluminum pad is staggered
relative to a copper pad under the aluminum pad;
[0032] FIG. 15 provides a top view of a wafer, wherein the pad
structure shown in FIG. 14 is being utilized; and
[0033] FIG. 16 is a block flow diagram which illustrates a
passivation scheme which can be used to obtain the pad structure
shown in FIG. 14.
DESCRIPTION
[0034] While the invention may be susceptible to embodiment in
different forms, there are shown in the drawings, and herein will
be described in detail, specific embodiments of the invention. The
present disclosure is to be considered an example of the principles
of the invention, and is not intended to limit the invention to
that which is illustrated and described herein.
[0035] The present invention proposes modified passivation
integration schemes and pad structures to reduce the stress
gradients and/or improve the contact surface existing between the
Al in the pad and the gold wire bond. This results in more uniform
IMC formation and increased surface area, and helps in reducing the
IMC crack initiation and propagation between the Al--Au interface
and improve the reliability of wire bonded parts with Cu/Low-K
metallization.
[0036] In FIGS. 3-7, 9, 10 and 14, reference numeral 100 is used to
identify oxide, reference numeral 102 is used to identify SiN, and
reference numeral 104 is used to identify a barrier layer.
[0037] For comparison, a prior art passivation scheme is as
follows:
[0038] 1. Define aluminum pads post R2 Module (see FIG. 3). [0039]
a. Deposit Passivation 1 Stack (SiN/Oxide) (identified with
reference numeral 20 in FIG. 3); [0040] b. Passivation 1 mask and
etch to define the pad and/or fuse area (identified with reference
numeral 22 in FIG. 3); [0041] c. TaN/Al--Cu metal stack and hard
mask (SiON) deposition; and [0042] d. Aluminum pad mask and etch
(in FIG. 3, the mask is identified with reference numeral 24, the
etching is represented by arrows 26, and the aluminum pad is
identified with reference numeral 28).
[0043] 2. Passivation 2 and opening of the pad (final pad
structure) (see FIG. 4). [0044] a. Deposit Passivation 2 Stack
(Oxide/SiN/Oxide/SiN) (identified with reference numeral 30 in FIG.
4); [0045] b. Passivation 2 mask and etch to open the pad area for
bonding (in FIG. 4, the pad area is identified with reference
numeral 32)
[0046] As shown in FIG. 4, this passivation scheme provides that a
single copper pad 34 is disposed under an aluminum pad 28 which has
a single pad area 36 formed therein for bonding to a wire.
[0047] In contrast, as shown in FIG. 7, an embodiment of the
present invention provides a pad structure 50 which includes a
copper pad 52, an aluminum pad 54 above the copper pad 52, and a
plurality of recessed pad areas 56 formed in the aluminum pad 54,
such that the pad 54 consists of a plurality of slots 56 and
islands 58. FIGS. 5-8 illustrate a passivation scheme which may be
used to provide such a pad structure. The passivation scheme
includes the following steps:
[0048] 1. Define oxide slots/islands in the pad area post R2 module
(see FIG. 5). [0049] a. Perform the same steps as the scheme
described with regard to FIGS. 3 and 4, up to Passivation 1
deposition (SiN/Oxide) (identified with reference numeral 60 in
FIG. 5); and [0050] b. Slotted Passivation 1 mask and etch to
define slots/islands in the oxide 61 (in FIG. 5, the mask is
identified with reference numeral 62, and the slots and islands
which are formed as a result of the etching are identified with
reference numerals 64 and 66, respectively).
[0051] 2. Slotted/Island aluminum pad formation (see FIG. 6).
[0052] a. TaN/Al--Cu metal stack and hard mask (SiON) deposition;
and [0053] b. Aluminum pad mask and etch to form slotted/island
aluminum pad (in FIG. 6, the aluminum pad is identified with
reference numeral 54, the mask is identified with reference numeral
72, the slots which are formed by the etching is identified with
reference numeral 56, and the islands are identified with reference
numeral 58).
[0054] 3. Passivation 2 deposition and opening of pad (final pad
structure) (see FIG. 7). [0055] a. Deposit Passivation 2 Stack
(Oxide/SiN/Oxide/SiN) (identified with reference numeral 73 in FIG.
7); and [0056] b. Passivation 2 mask and etch to open the pad area
74 for bonding (i.e., to the slots 56).
[0057] FIG. 8 is a block flow diagram which illustrates the
passivation scheme which can be used to obtain the pad structure 50
shown in FIG. 7, and is self-explanatory in light of FIGS. 5-7 and
the foregoing description.
[0058] FIG. 9 illustrates a pad structure 50a which is in
accordance with another embodiment of the present invention,
wherein an oxide mesa 80 is formed under the aluminum pad 54,
between two slots 56 (i.e., pads). The scheme used to form such a
pad structure may be the same integration flow as described above
with regard to FIGS. 5-8, but using a different passivation mask in
order to create the oxide mesa 80 at the center of the pad with
peripheral perimeter contact to the metal R2 pad 52 below.
[0059] The primary advantage of the pad structure shown in FIG. 9
is that the local stress in the aluminum film 54 is dictated by the
large interface between the oxide mesa 80 and the aluminum pad film
54 and not by the interface between the tensile copper pad 52 and
the aluminum film 54. This results in more controlled IMC formation
and growth as well as the formation of the desired IMC phases that
reduce crack formation and propagation.
[0060] Additional integration schemes can he used to limit the
copper film/aluminum film interface and replace it with the more
compressive IMD film/aluminum film interfaces offering the
advantage listed above. These structures formed using different
structure metal R2 Trench/Via masks or Passivation 1 Mask
combinations to define the pad region are described below.
[0061] FIG. 10 provides a cross-sectional view relating to a pad
structure 50b which is in accordance with still another embodiment
of the present invention, wherein a single slot 56 is formed in the
aluminum pad 54, and peripheral via/trench pad structures 82 are
provided under the aluminum pad 54, on each side of an oxide mesa
53. FIG. 11 shows a wafer 84 where the pad structure 50b shown in
FIG. 10 is used in association with peripheral vias, and FIG. 12
shows a wafer 86 where the pad structure 50b shown in FIG. 10 is
used in association with peripheral trenches. FIG. 13 is a block
flow diagram which illustrates a passivation scheme which can be
used to obtain the pad structure 50b shown in FIG. 10, and is
self-explanatory in light of FIG. 10 and the foregoing
description.
[0062] FIG. 14 provides a cross-sectional view relating to a pad
structure 50c which is in accordance with still another embodiment
of the present invention, wherein an aluminum pad 54 is staggered
relative to a copper pad 52 under the aluminum pad 54. FIG. 15
provides a top view of a wafer 88, wherein the pad structure shown
in FIG. 14 is being utilized. FIG. 16 is a block flow diagram which
illustrates a passivation scheme which can he used to obtain the
pad structure 50c shown in FIG. 14, and is self-explanatory in
light of FIG. 14 and the foregoing description.
[0063] The present invention proposes passivation integration
schemes and pad structures which reduce the stress gradients and/or
improve the contact surface existing between the aluminum in the
pad and the gold wire bond. This results in more uniform IMC
formation and increased surface area, and helps in reducing the IMC
crack initiation and propagation between the Al--Au interface and
improves the reliability of wire bonded parts with Cu/Low-K
metallization.
[0064] While embodiments of the present invention are shown and
described, it is envisioned that those skilled in the art may
devise various modifications of the present invention without
departing from the spirit and scope of the appended claims.
* * * * *