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Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow Grant 8,384,165 - Carter , et al. February 26, 2 | 2013-02-26 |
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Method for redirecting void diffusion away from vias in an integrated circuit design Grant 7,582,566 - Allman , et al. September 1, 2 | 2009-09-01 |
Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing Grant 7,531,442 - Pallinti , et al. May 12, 2 | 2009-05-12 |
Application Of Gate Edge Liner To Maintain Gate Length Cd In A Replacement Gate Transistor Flow App 20080308882 - Carter; Richard J. ;   et al. | 2008-12-18 |
Method and apparatus for diverting void diffusion in integrated circuit conductors Grant 7,436,040 - Allman , et al. October 14, 2 | 2008-10-14 |
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow Grant 7,405,116 - Carter , et al. July 29, 2 | 2008-07-29 |
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Method For Redirecting Void Diffusion Away From Vias In An Integrated Circuit Design App 20080132065 - Allman; Derryl D. J. ;   et al. | 2008-06-05 |
Damascene replacement metal gate process with controlled gate profile and length using Si.sub.1-xGe.sub.x as sacrificial material Grant 7,365,015 - Lin , et al. April 29, 2 | 2008-04-29 |
Method and apparatus for redirecting void diffusion away from vias in an integrated circuit design Grant 7,361,965 - Allman , et al. April 22, 2 | 2008-04-22 |
Incorporating dopants to enhance the dielectric properties of metal silicates Grant 7,312,127 - Lo , et al. December 25, 2 | 2007-12-25 |
Integrated barrier and seed layer for copper interconnect technology Grant 7,300,869 - Sun , et al. November 27, 2 | 2007-11-27 |
Method and apparatus for diverting void diffusion in integrated circuit conductors App 20070259518 - Allman; Derryl D.J. ;   et al. | 2007-11-08 |
Method and apparatus for redirecting void diffusion away from vias in an integrated circuit design App 20070155160 - Allman; Derryl D. J. ;   et al. | 2007-07-05 |
Eliminate IMC cracking in post wirebonded dies: macro level stress reduction by modifying dielectric/metal film stack in be layers during Cu/Low-K processing App 20070123024 - Pallinti; Jayanthi ;   et al. | 2007-05-31 |
Alternate pad structures/passivation inegration schemes to reduce or eliminate IMC cracking in post wire bonded dies during Cu/Low-K BEOL processing App 20070114667 - Bhatt; Hemanshu ;   et al. | 2007-05-24 |
Reduction of macro level stresses in copper/Low-K wafers by altering aluminum pad/passivation stack to reduce or eliminate IMC cracking in post wire bonded dies App 20070102812 - Sun; Sey-Shing ;   et al. | 2007-05-10 |
Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing Grant 7,205,673 - Pallinti , et al. April 17, 2 | 2007-04-17 |
Method and structure for creating ultra low resistance damascene copper wiring Grant 7,196,420 - Burke , et al. March 27, 2 | 2007-03-27 |
Method for fabricating planar semiconductor wafers Grant 7,179,736 - Kwak , et al. February 20, 2 | 2007-02-20 |
Self-aligned cell integration scheme App 20060281256 - Carter; Richard J. ;   et al. | 2006-12-14 |
Nano structure electrode design App 20060278902 - Sun; Sey-Shing ;   et al. | 2006-12-14 |
Incorporating dopants to enhance the dielectric properties of metal silicates App 20060166496 - Lo; Wai ;   et al. | 2006-07-27 |
Incorporating dopants to enhance the dielectric properties of metal silicates Grant 7,064,062 - Lo , et al. June 20, 2 | 2006-06-20 |
Bi-axial texturing of high-K dielectric films to reduce leakage currents App 20060118919 - Lo; Wai ;   et al. | 2006-06-08 |
Method for fabricating planar semiconductor wafers App 20060084267 - Kwak; Byung-Sung Leo ;   et al. | 2006-04-20 |
Integrated barrier and seed layer for copper interconnect technology App 20060063375 - Sun; Sey-Shing ;   et al. | 2006-03-23 |
Bimetallic oxide compositions for gate dielectrics Grant 7,015,096 - Zubkov , et al. March 21, 2 | 2006-03-21 |
Application of gate edge liner to maintain gate length CD in a replacement gate transistor flow App 20060035425 - Carter; Richard J. ;   et al. | 2006-02-16 |
Method for creating barrier layers for copper diffusion Grant 6,998,343 - Sun , et al. February 14, 2 | 2006-02-14 |
Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material App 20060011994 - Lin; Hong ;   et al. | 2006-01-19 |
Method and structure for creating ultra low resistance damascene copper wiring Grant 6,987,059 - Burke , et al. January 17, 2 | 2006-01-17 |
Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell Grant 6,955,937 - Burke , et al. October 18, 2 | 2005-10-18 |
Method for improved local planarity control during electropolishing App 20050224358 - Kwak, Byung-Sung ;   et al. | 2005-10-13 |
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Electroluminescent phosphor thin films with increased brightness that includes an alkali halide Grant 6,169,359 - Sun , et al. January 2, 2 | 2001-01-02 |
Alternating current thin film electroluminescent device having blue light emitting alkaline earth phosphor Grant 6,043,602 - Sun , et al. March 28, 2 | 2000-03-28 |
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TFEL device with injection layer Grant 5,581,150 - Rack , et al. December 3, 1 | 1996-12-03 |
Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices Grant 5,505,986 - Velthaus , et al. April 9, 1 | 1996-04-09 |
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