U.S. patent application number 12/960178 was filed with the patent office on 2013-10-24 for semiconductor device and method of forming bump-on-lead interconnection.
This patent application is currently assigned to STATS CHIPPAC, LTD.. The applicant listed for this patent is Rajendra D. Pendse. Invention is credited to Rajendra D. Pendse.
Application Number | 20130277826 12/960178 |
Document ID | / |
Family ID | 43779388 |
Filed Date | 2013-10-24 |
United States Patent
Application |
20130277826 |
Kind Code |
A9 |
Pendse; Rajendra D. |
October 24, 2013 |
SEMICONDUCTOR DEVICE AND METHOD OF FORMING BUMP-ON-LEAD
INTERCONNECTION
Abstract
A semiconductor device has a semiconductor die with a plurality
of composite bumps formed over a surface of the semiconductor die.
The composite bumps have a fusible portion and non-fusible portion,
such as a conductive pillar and bump formed over the conductive
pillar. The composite bumps can also be tapered. Conductive traces
are formed over a substrate with interconnect sites having edges
parallel to the conductive trace from a plan view for increasing
escape routing density. The interconnect site can have a width less
than 1.2 times a width of the conductive trace. The composite bumps
are wider than the interconnect sites. The fusible portion of the
composite bumps is bonded to the interconnect sites so that the
fusible portion covers a top surface and side surface of the
interconnect sites. An encapsulant is deposited around the
composite bumps between the semiconductor die and substrate.
Inventors: |
Pendse; Rajendra D.;
(Fremont, CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Pendse; Rajendra D. |
Fremont |
CA |
US |
|
|
Assignee: |
STATS CHIPPAC, LTD.
Singapore
SG
|
Prior
Publication: |
|
Document Identifier |
Publication Date |
|
US 20110074024 A1 |
March 31, 2011 |
|
|
Family ID: |
43779388 |
Appl. No.: |
12/960178 |
Filed: |
December 3, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12472236 |
May 26, 2009 |
7901983 |
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12960178 |
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12062293 |
Apr 3, 2008 |
7700407 |
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12472236 |
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10985654 |
Nov 10, 2004 |
7368817 |
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12062293 |
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60518864 |
Nov 10, 2003 |
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60533918 |
Dec 31, 2003 |
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Current U.S.
Class: |
257/737 ;
257/E21.295; 257/E23.021; 438/118 |
Current CPC
Class: |
H01L 2224/13018
20130101; H01L 2224/1308 20130101; H01L 2224/131 20130101; H01L
2224/13111 20130101; H01L 2224/13116 20130101; H01L 2224/1308
20130101; H01L 2224/73265 20130101; H01L 2924/01082 20130101; H01L
21/563 20130101; H01L 24/11 20130101; H01L 2224/16 20130101; H01L
2224/32225 20130101; H01L 24/16 20130101; H01L 2224/13111 20130101;
H01L 2224/16227 20130101; H01L 2224/32145 20130101; H01L 2224/83192
20130101; H01L 2224/94 20130101; H01L 2924/01047 20130101; H01L
2924/014 20130101; H01L 2924/14 20130101; H01L 2924/1579 20130101;
H01L 2224/13147 20130101; H01L 2224/75301 20130101; H01L 2224/81203
20130101; H01L 2924/00014 20130101; H01L 2224/16225 20130101; H01L
2224/81385 20130101; H01L 2924/0105 20130101; H01L 2924/0132
20130101; H01L 2924/13091 20130101; H01L 2924/1433 20130101; H01L
2924/3025 20130101; H01L 2224/13109 20130101; H01L 23/3157
20130101; H01L 2224/13147 20130101; H01L 2224/13155 20130101; H01L
2224/48091 20130101; H01L 2224/83192 20130101; H01L 2924/00014
20130101; H01L 2924/01074 20130101; H01L 2924/0132 20130101; H01L
2224/1308 20130101; H01L 2924/0133 20130101; H01L 2924/12042
20130101; H01L 2224/48091 20130101; H01L 2224/131 20130101; H01L
2224/73204 20130101; H01L 2224/13 20130101; H01L 2224/27013
20130101; H01L 2224/81193 20130101; H01L 2924/3011 20130101; H01L
2224/13155 20130101; H01L 2224/1411 20130101; H01L 2224/11
20130101; H01L 2224/16237 20130101; H01L 2224/81194 20130101; H01L
2924/01022 20130101; H01L 2924/01029 20130101; H01L 2924/01078
20130101; H01L 2924/1306 20130101; H01L 2924/15174 20130101; H01L
2224/13111 20130101; H01L 2224/1601 20130101; H01L 2224/16225
20130101; H01L 2224/83051 20130101; H01L 2224/83192 20130101; H01L
2224/93 20130101; H01L 2924/01015 20130101; H01L 2924/12041
20130101; H01L 2224/13082 20130101; H01L 2224/73203 20130101; H01L
2224/81208 20130101; H01L 2924/0133 20130101; H01L 2924/12042
20130101; H01L 2224/13111 20130101; H01L 23/49838 20130101; H01L
2224/13111 20130101; H01L 2224/13111 20130101; H01L 2224/13144
20130101; H01L 2224/83191 20130101; H01L 2924/01322 20130101; H01L
2924/3025 20130101; H01L 2224/13111 20130101; H01L 2224/1134
20130101; H01L 2224/13111 20130101; H01L 2224/13111 20130101; H01L
2224/13 20130101; H01L 24/48 20130101; H01L 2224/1308 20130101;
H01L 2224/1308 20130101; H01L 2224/16238 20130101; H01L 2224/81345
20130101; H01L 2224/16225 20130101; H01L 2224/16225 20130101; H01L
2224/29109 20130101; H01L 2924/00013 20130101; H01L 2924/01047
20130101; H01L 2224/13111 20130101; H01L 2924/01047 20130101; H01L
2924/01047 20130101; H01L 2224/16 20130101; H01L 2224/1308
20130101; H01L 2224/2919 20130101; H01L 2924/01075 20130101; H01L
2924/181 20130101; H01L 2224/13111 20130101; H01L 24/17 20130101;
H01L 23/3128 20130101; H01L 2224/75301 20130101; H01L 2224/81191
20130101; H01L 2924/00013 20130101; H01L 2924/01013 20130101; H01L
2924/3011 20130101; H01L 2224/1134 20130101; H01L 2224/1308
20130101; H01L 2224/17107 20130101; H01L 2224/83385 20130101; H01L
2924/01005 20130101; H01L 24/73 20130101; H01L 24/12 20130101; H01L
2224/73204 20130101; H01L 2924/00011 20130101; H01L 2924/19041
20130101; H01L 2224/13111 20130101; H01L 2224/73265 20130101; H01L
2224/11 20130101; H01L 2224/13019 20130101; H01L 2224/13116
20130101; H01L 2224/73265 20130101; H01L 2924/1306 20130101; H01L
2924/181 20130101; H01L 2224/16225 20130101; H01L 2224/73265
20130101; H01L 2224/29111 20130101; H01L 2924/0132 20130101; H01L
2924/15787 20130101; H01L 2224/13144 20130101; H01L 2224/13111
20130101; H01L 2924/00012 20130101; H01L 2924/01029 20130101; H01L
2924/01049 20130101; H01L 2924/0105 20130101; H01L 2924/01082
20130101; H01L 2224/131 20130101; H01L 2224/73204 20130101; H01L
2924/00 20130101; H01L 2924/00014 20130101; H01L 2924/00 20130101;
H01L 2924/00014 20130101; H01L 2924/0105 20130101; H01L 2224/13147
20130101; H01L 2224/81805 20130101; H01L 2924/01082 20130101; H01L
2224/32145 20130101; H01L 2224/32225 20130101; H01L 2924/00
20130101; H01L 2924/00014 20130101; H01L 2924/0105 20130101; H01L
2924/207 20130101; H01L 2224/13099 20130101; H01L 2924/00014
20130101; H01L 2224/48227 20130101; H01L 2924/0665 20130101; H01L
2924/00014 20130101; H01L 2924/01047 20130101; H01L 2924/01047
20130101; H01L 2924/01047 20130101; H01L 2224/32225 20130101; H01L
2224/45099 20130101; H01L 2924/00 20130101; H01L 2924/00 20130101;
H01L 2224/13116 20130101; H01L 2224/48227 20130101; H01L 2224/32225
20130101; H01L 2924/00 20130101; H01L 2924/00 20130101; H01L
2924/01047 20130101; H01L 2224/45015 20130101; H01L 2924/00
20130101; H01L 2924/00014 20130101; H01L 2924/00014 20130101; H01L
2924/01029 20130101; H01L 2924/01029 20130101; H01L 2924/00014
20130101; H01L 2924/00 20130101; H01L 2224/13111 20130101; H01L
2924/00012 20130101; H01L 2924/00014 20130101; H01L 2924/01029
20130101; H01L 2924/00 20130101; H01L 2224/16225 20130101; H01L
2224/13155 20130101; H01L 2224/32225 20130101; H01L 2924/00012
20130101; H01L 2924/0105 20130101; H01L 2924/01047 20130101; H01L
2924/0105 20130101; H01L 2224/32145 20130101; H01L 2924/00014
20130101; H01L 2924/01029 20130101; H01L 2924/01047 20130101; H01L
2924/01049 20130101; H01L 2924/014 20130101; H01L 2924/00 20130101;
H01L 2924/00012 20130101; H01L 2924/01029 20130101; H01L 2924/0105
20130101; H01L 2224/13111 20130101; H01L 2924/00 20130101; H01L
2924/00014 20130101; H01L 2924/014 20130101; H01L 2924/01047
20130101; H01L 2924/01082 20130101; H01L 2924/00012 20130101; H01L
2924/00014 20130101; H01L 2924/01047 20130101; H01L 2924/13091
20130101; H01L 2924/00 20130101; H01L 2924/00014 20130101; H01L
2924/01029 20130101; H01L 2924/00 20130101; H01L 2224/13111
20130101; H01L 2924/00 20130101; H01L 2224/11 20130101; H01L
2924/00 20130101; H01L 2924/00 20130101; H01L 2924/0105 20130101;
H01L 2224/16225 20130101; H01L 2924/00 20130101; H01L 2924/00
20130101; H01L 2924/00012 20130101; H01L 2924/01082 20130101; H01L
2924/00 20130101; H01L 2224/48227 20130101; H01L 2924/01029
20130101; H01L 2924/00 20130101; H01L 2924/00014 20130101; H01L
2924/00014 20130101; H01L 2924/01033 20130101; H01L 2924/00011
20130101; H01L 2924/01079 20130101; H01L 2924/01322 20130101; H01L
2924/181 20130101; H01L 2924/3512 20130101; H01L 2224/13116
20130101; H01L 33/62 20130101; H01L 2224/83856 20130101; H01L
2924/00014 20130101; H01L 2924/14 20130101; H01L 2924/181 20130101;
H01L 2224/13018 20130101; H01L 24/32 20130101; H01L 2224/1308
20130101; H01L 2224/16225 20130101; H01L 2224/2919 20130101; H01L
2224/48227 20130101; H01L 2224/81801 20130101; H01L 2924/0133
20130101; H01L 2224/93 20130101; H01L 2224/13144 20130101; H01L
2924/01027 20130101; H01L 2924/15787 20130101; H01L 24/29 20130101;
H01L 23/49811 20130101; H01L 24/75 20130101; H01L 24/83 20130101;
H01L 2224/13023 20130101; H01L 2224/16235 20130101; H01L 2224/75
20130101; H01L 2924/0132 20130101; H01L 2924/13091 20130101; H01L
2924/12041 20130101; H01L 2224/13016 20130101; H01L 24/81 20130101;
H01L 2224/16225 20130101; H01L 2924/01006 20130101; H01L 2924/01049
20130101; H01L 2224/13111 20130101; H01L 2224/13111 20130101; H01L
2924/00012 20130101; H01L 2924/00012 20130101; H01L 2924/01047
20130101; H01L 2924/01049 20130101 |
Class at
Publication: |
257/737 ;
438/118; 257/E21.295; 257/E23.021 |
International
Class: |
H01L 23/485 20060101
H01L023/485; H01L 21/3205 20060101 H01L021/3205 |
Claims
1. A method of making a semiconductor device, comprising: providing
a semiconductor die having a plurality of composite bumps formed
over a surface of the semiconductor die, the composite bumps having
a fusible portion and non-fusible portion; providing a substrate;
forming a plurality of conductive traces over the substrate with
interconnect sites having edges parallel to the conductive trace
from a plan view for increasing escape routing density, the
composite bumps being wider than the interconnect sites; bonding
the fusible portion of the composite bumps to the interconnect
sites so that the fusible portion covers a top surface and side
surface of the interconnect sites; and depositing an encapsulant
around the composite bumps between the semiconductor die and
substrate.
2. The method of claim 1, wherein the non-fusible portion of the
composite bumps includes gold, copper, nickel, lead solder, or
lead-tin alloy.
3. The method of claim 1, wherein the fusible portion of the
composite bumps includes tin, lead-free alloy, tin-silver alloy,
tin-silver-copper alloy, tin-silver-indium alloy, eutectic solder,
or other tin alloys with silver, copper, or lead.
4. The method of claim 1, wherein the interconnect site has a width
less than 1.2 times a width of the conductive trace.
5. The method of claim 1, further including forming a masking layer
over an area of the substrate away from the interconnect sites.
6. The method of claim 1, wherein the composite bumps is
tapered.
7. A method of making a semiconductor device, comprising: providing
a semiconductor; providing a substrate; forming a plurality of
conductive traces over the substrate with interconnect sites having
edges parallel to the conductive trace from a plan view for
increasing escape routing density; forming a plurality of
interconnect structures between the semiconductor die and the
interconnect sites on the substrate; bonding the interconnect
structures to the interconnect sites so that the interconnect
structures cover a top surface and side surface of the interconnect
sites; and depositing an encapsulant between the semiconductor die
and substrate.
8. The method of claim 7, wherein the interconnect site has a width
less than 1.2 times a width of the conductive trace.
9. The method of claim 7, wherein the interconnect structures
include a fusible portion and non-fusible portion.
10. The method of claim 8, wherein the non-fusible portion of the
interconnect structures includes gold, copper, nickel, lead solder,
or lead-tin alloy.
11. The method of claim 7, wherein the fusible portion of the
interconnect structures includes tin, lead-free alloy, tin-silver
alloy, tin-silver-copper alloy, tin-silver-indium alloy, eutectic
solder, or other tin alloys with silver, copper, or lead.
12. The method of claim 7, wherein the interconnect structures
include a conductive pillar and bump formed over the conductive
pillar.
13. The method of claim 7, wherein the interconnect structures
include a bump.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die; providing a substrate; forming a
plurality of conductive traces over the substrate with interconnect
sites having edges parallel to the conductive trace from a plan
view for increasing escape routing density; forming a plurality of
interconnect structures between the semiconductor die and the
interconnect sites on the substrate; and bonding the interconnect
structures to the interconnect sites so that the interconnect
structures cover a top surface and side surface of the interconnect
sites.
15. The method of claim 14, wherein the interconnect site has a
width less than 1.2 times a width of the conductive trace.
16. The method of claim 14, further including depositing an
encapsulant between the semiconductor die and substrate.
17. The method of claim 14, wherein the interconnect structures
include a fusible portion and non-fusible portion.
18. The method of claim 17, wherein the non-fusible portion of the
interconnect structures includes gold, copper, nickel, lead solder,
or lead-tin alloy.
19. The method of claim 17, wherein the fusible portion of the
interconnect structures includes tin, lead-free alloy, tin-silver
alloy, tin-silver-copper alloy, tin-silver-indium alloy, eutectic
solder, or other tin alloys with silver, copper, or lead.
20. The method of claim 14, wherein the interconnect structures
include a conductive pillar and bump formed over the conductive
pillar.
21. A semiconductor device, comprising: a semiconductor die; a
substrate; a plurality of conductive traces formed over the
substrate with interconnect sites having edges parallel to the
conductive trace from a plan view for increasing escape routing
density; a plurality of interconnect structures formed between the
semiconductor die and interconnect sites on the substrate, the
interconnect structures being bonded to the interconnect sites; and
an encapsulant deposited between the semiconductor die and
substrate.
22. The semiconductor device of claim 21, wherein the non-fusible
portion of the interconnect structures includes gold, copper,
nickel, lead solder, or lead-tin alloy.
23. The semiconductor device of claim 21, wherein the fusible
portion of the interconnect structures includes tin, lead-free
alloy, tin-silver alloy, tin-silver-copper alloy, tin-silver-indium
alloy, eutectic solder, or other tin alloys with silver, copper, or
lead.
24. The semiconductor device of claim 21, wherein the interconnect
site has a width less than 1.2 times a width of the conductive
trace.
25. The semiconductor device of claim 21, wherein the interconnect
structures include a conductive pillar and bump formed over the
conductive pillar.
Description
CLAIM OF DOMESTIC PRIORITY
[0001] The present application is a continuation-in-part of
application Ser. No. 12/472,236, filed May 26, 2009, and claims
priority to the foregoing application pursuant to 35 U.S.C.
.sctn.120.
FIELD OF THE INVENTION
[0002] The present invention relates in general to semiconductor
devices and, more particularly, to a semiconductor device and
method of forming a bump-on-lead interconnection.
BACKGROUND OF THE INVENTION
[0003] Semiconductor devices are commonly found in modern
electronic products. Semiconductor devices vary in the number and
density of electrical components. Discrete semiconductor devices
generally contain one type of electrical component, e.g., light
emitting diode (LED), small signal transistor, resistor, capacitor,
inductor, and power metal oxide semiconductor field effect
transistor (MOSFET). Integrated semiconductor devices typically
contain hundreds to millions of electrical components. Examples of
integrated semiconductor devices include microcontrollers,
microprocessors, charged-coupled devices (CCDs), solar cells, and
digital micro-mirror devices (DMDs).
[0004] Semiconductor devices perform a wide range of functions such
as signal processing, high-speed calculations, transmitting and
receiving electromagnetic signals, controlling electronic devices,
transforming sunlight to electricity, and creating visual
projections for television displays. Semiconductor devices are
found in the fields of entertainment, communications, power
conversion, networks, computers, and consumer products.
Semiconductor devices are also found in military applications,
aviation, automotive, industrial controllers, and office
equipment.
[0005] Semiconductor devices exploit the electrical properties of
semiconductor materials. The atomic structure of semiconductor
material allows its electrical conductivity to be manipulated by
the application of an electric field or base current or through the
process of doping. Doping introduces impurities into the
semiconductor material to manipulate and control the conductivity
of the semiconductor device.
[0006] A semiconductor device contains active and passive
electrical structures. Active structures, including bipolar and
field effect transistors, control the flow of electrical current.
By varying levels of doping and application of an electric field or
base current, the transistor either promotes or restricts the flow
of electrical current. Passive structures, including resistors,
capacitors, and inductors, create a relationship between voltage
and current necessary to perform a variety of electrical functions.
The passive and active structures are electrically connected to
form circuits, which enable the semiconductor device to perform
high-speed calculations and other useful functions.
[0007] Semiconductor devices are generally manufactured using two
complex manufacturing processes, i.e., front-end manufacturing, and
back-end manufacturing, each involving potentially hundreds of
steps. Front-end manufacturing involves the formation of a
plurality of die on the surface of a semiconductor wafer. Each die
is typically identical and contains circuits formed by electrically
connecting active and passive components. Back-end manufacturing
involves singulating individual die from the finished wafer and
packaging the die to provide structural support and environmental
isolation.
[0008] One goal of semiconductor manufacturing is to produce
smaller semiconductor devices. Smaller devices typically consume
less power, have higher performance, and can be produced more
efficiently. In addition, smaller semiconductor devices have a
smaller footprint, which is desirable for smaller end products. A
smaller die size can be achieved by improvements in the front-end
process resulting in die with smaller, higher density active and
passive components. Back-end processes may result in semiconductor
device packages with a smaller footprint by improvements in
electrical interconnection and packaging materials.
[0009] In conventional flipchip type packages, a semiconductor die
is mounted to a package substrate with the active side of the die
facing the substrate. Conventionally, the interconnection of the
circuitry in the die with circuitry in the substrate is made by way
of bumps which are attached to an array of interconnect pads on the
die, and bonded to a corresponding complementary array of
interconnect pads, often referred to as capture pads on the
substrate.
[0010] The areal density of electronic features on integrated
circuits has increased enormously, and semiconductor die having a
greater density of circuit features also may have a greater density
of sites for interconnection with the package substrate.
[0011] The package is connected to underlying circuitry, such as a
printed circuit board or motherboard, by way of second level
interconnects between the package and the underlying circuit. The
second level interconnects have a greater pitch than the flipchip
interconnects, and so the routing on the substrate conventionally
fans out. Significant technological advances have enabled
construction of fine lines and spaces. The space between adjacent
pads limits the number of traces than can escape from the more
inward capture pads in the array. The fan-out routing between the
capture pads beneath the die and external pins of the package is
conventionally formed on multiple metal layers within the package
substrate. For a complex interconnect array, substrates having
multiple layers can be required to achieve routing between the die
pads and second level interconnects on the package.
[0012] Multiple layer substrates are expensive and, in conventional
flipchip constructs, the substrate alone typically accounts for
more than half the package cost. The high cost of multilayer
substrates has been a factor in limiting proliferation of flipchip
technology in mainstream products. The escape routing pattern
typically introduces additional electrical parasitics because the
routing includes short runs of unshielded wiring and vias between
wiring layers in the signal transmission path. Electrical
parasitics can significantly limit package performance.
[0013] The flipchip interconnection can be made by using a melting
process to join the bumps, e.g., solder bumps, onto the mating
surfaces of the corresponding capture pads, referred to as
bump-on-capture pad (BOC) interconnect. Two features are evident in
the BOC design: first, a comparatively large capture pad is
required to mate with the bump on the die, and second, an
insulating material, typically a solder mask, is required to
confine the flow of solder during the interconnection process. The
solder mask opening defines the contour of the melted solder at the
capture pad, i.e. solder mask defined, or the solder contour may
not be defined by the mask opening, i.e. non-solder mask defined.
In the latter case, the solder mask opening is significantly larger
than the capture pad. Since the techniques for defining solder mask
openings have wide tolerance ranges for a solder mask defined bump
configuration, the capture pad must be large, typically
considerably larger than the design size for the mask opening, to
ensure that the mask opening will be located on the mating surface
of the pad. For a non-solder mask defined bump configuration, the
solder mask opening must be larger than the capture pad. The width
of capture pads or diameter can be as much as two to four times
wider than the trace width. The larger width of the capture pads
results in considerable loss of routing space on the top substrate
layer. In particular, the escape routing pitch is much larger than
the finest trace pitch that the substrate technology can offer. A
significant number of pads must be routed on lower substrate layers
by means of short stubs and vias, often beneath the footprint of
the die, emanating from the pads in question.
[0014] In a typical example of a conventional solder mask defined
BOC interconnection, the capture pad has a diameter about 140
.mu.m, and the solder mask opening has a diameter about 90 .mu.m,
and the routing traces are about 25-30 .mu.m wide. The diameter of
the mating surface for attachment of the bump to the die pad, that
is, the place of interface between the bump and the die pad, is
defined by the solder mask opening as having a diameter about 90
.mu.m.
[0015] Conventional BOC interconnect layouts are shown in FIGS. 1
and 2 as portions 10 and 20 of a flipchip package. The partial
sectional view in FIG. 1 is taken in a plane parallel to the
package substrate surface, along the line 1-1' in FIG. 2. The
partial sectional view in FIG. 2 is taken in a plane perpendicular
to the package substrate surface, along the line 2-2' in FIG. 1.
Certain features are shown as if transparent, but many of the
features in FIG. 1 are shown partly obscured by overlying
features.
[0016] In FIGS. 1 and 2, a die attach surface of the package
substrate includes a metal or layer formed on a dielectric layer
over substrate 12. The metal layer is patterned to form traces or
leads 13 and capture pads 14. An insulating layer or solder mask 16
covers the die attach surface of substrate 12. Solder mask 16 is
usually a photo-definable material patterned by photoresist to
leave the mating surfaces of capture pads 14 exposed. The
interconnect bumps 15 attached to pads on the active side of
semiconductor die 18 are joined to the mating surfaces of
corresponding capture pads 14 on substrate 12 to form appropriate
electrical interconnection between the circuitry on the die and the
leads on the substrate. After the reflowed solder is cooled to
establish the electrical connection, an underfill material 17 is
introduced into the space between semiconductor die 18 and
substrate 12 to mechanically stabilize the interconnects and
protect the features between the die and substrate.
[0017] FIG. 1 shows signal escape traces 13 in the upper metal
layer of substrate 12 routed from their respective capture pads 14
across the die edge location, indicated by broken line 11, and away
from the die footprint. The signal traces 13 can have an escape
pitch P.sub.E about 112 micrometers (.mu.m). A 30 .mu.m/30 .mu.m
design rule is typical for traces 13 in a configuration such as
shown in FIG. 1. Traces 13 are nominally 30 .mu.m wide and can be
spaced as close together as 30 .mu.m. The capture pads 14 are
typically three times greater than the trace width, and the capture
pads have a width or diameter nominally 90 .mu.m. The openings in
the solder mask are larger than the pads, having a nominal width or
diameter of 135 .mu.m.
[0018] FIGS. 1 and 2 show a non-solder mask defined solder contour.
As the fusible material of the bumps on the die melt, the molten
solder tends to wet the metal of the leads and capture pads and the
solder tends to run out over any contiguous metal surfaces that are
not masked. The solder tends to flow along the contiguous lead 13,
and here the solder flow is limited by the solder mask at location
19 in FIG. 1. A non-solder mask defined solder contour at the pad
is apparent in FIG. 2, in which portion 29 of bumps 15 is shown as
having flowed over the sides of capture pads 14 and down to the
surface of the dielectric layer of substrate 12. The non-solder
mask defined contour does not limit the flow of solder over the
surface and down over the sides of the capture pads and, unless
there is a substantial excess of solder at the pad, the flow of
solder is limited by the fact that the dielectric surface of the
substrate is typically not wettable by the molten solder. A lower
limit on the density of the capture pads in the arrangement shown
in FIG. 1 is determined by, among other factors, the capacity of
the mask forming technology to make reliable narrow mask structures
and the need to provide mask structures between adjacent mask
openings. A lower limit on the escape density is additionally
determined by, among other factors, the need for escape lines from
more centrally located capture pads to be routed between more
peripherally located capture pads.
[0019] FIG. 3 shows a solder mask defined solder contour, in a
sectional view similar to FIG. 2. Semiconductor die 38 is shown
affixed by way of bumps 35 onto the mating surfaces of capture pads
34 formed along with traces or leads 33 by patterning a metal layer
on the die attach side of a dielectric layer of substrate 32. After
the reflowed solder is cooled to establish the electrical
connection, an underfill material 37 is introduced into the space
between die 38 and substrate 32 to mechanically stabilize the
interconnects and protect the features between the die and
substrate. Here, capture pads 34 are wider than in the example of
FIGS. 1 and 2, and the solder mask openings are smaller than the
capture pads, so that the solder mask material covers the sides and
part of the mating surface of each capture pad, as shown at
location 39, as well as leads 33. When bumps 35 are brought into
contact with the mating surfaces of the respective capture pads 34,
and then melted, solder mask material 36 restricts the flow of the
molten solder, so that the shapes of the solder contours are
defined by the shapes and dimensions of the mask openings over
capture pads 34.
SUMMARY OF THE INVENTION
[0020] A need exists to minimize the interconnect sites on a
substrate to increase routing density without impacting electrical
functionality or manufacturing reliability. Accordingly, in one
embodiment, the present invention is a method of making a
semiconductor device comprising the steps of providing a
semiconductor die having a plurality of composite bumps formed over
a surface of the semiconductor die, providing a substrate, and
forming a plurality of conductive traces over the substrate with
interconnect sites having edges parallel to the conductive trace
from a plan view for increasing escape routing density. The
composite bumps have a fusible portion and non-fusible portion. The
composite bumps are wider than the interconnect sites. The method
further includes the steps of bonding the fusible portion of the
composite bumps to the interconnect sites so that the fusible
portion covers a top surface and side surface of the interconnect
sites, and depositing an encapsulant around the composite bumps
between the semiconductor die and substrate.
[0021] In another embodiment, the present invention is a method of
making a semiconductor device comprising the steps of providing a
semiconductor die, providing a substrate, forming a plurality of
conductive traces over the substrate with interconnect sites having
edges parallel to the conductive trace from a plan view for
increasing escape routing density, forming a plurality of
interconnect structures between the semiconductor die and the
interconnect sites on the substrate, bonding the interconnect
structures to the interconnect sites so that the interconnect
structures cover a top surface and side surface of the interconnect
sites, and depositing an encapsulant between the semiconductor die
and substrate.
[0022] In another embodiment, the present invention is a method of
making a semiconductor device comprising the steps of providing a
semiconductor die, providing a substrate, forming a plurality of
conductive traces over the substrate with interconnect sites having
edges parallel to the conductive trace from a plan view for
increasing escape routing density, forming a plurality of
interconnect structures between the semiconductor die and the
interconnect sites on the substrate, and bonding the interconnect
structures to the interconnect sites so that the interconnect
structures cover a top surface and side surface of the interconnect
sites.
[0023] In another embodiment, the present invention is a
semiconductor device comprising a semiconductor die. A plurality of
conductive traces is formed over a substrate with interconnect
sites having edges parallel to the conductive trace from a plan
view for increasing escape routing density. A plurality of
interconnect structures is formed between the semiconductor die and
the interconnect sites on the substrate. The interconnect
structures are bonded to the interconnect sites. An encapsulant is
deposited between the semiconductor die and substrate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] FIG. 1 illustrates a conventional bump-on-capture pad
flipchip interconnection parallel to the plane of the package
substrate surface;
[0025] FIG. 2 illustrates the conventional bump-on-capture pad
flipchip interconnection perpendicular to the plane of the package
substrate surface;
[0026] FIG. 3 illustrates a portion of another conventional
bump-on-capture pad flipchip interconnection perpendicular to the
plane of the package substrate surface;
[0027] FIG. 4 illustrates a PCB with different types of packages
mounted to its surface;
[0028] FIGS. 5a-5c illustrate further detail of the representative
semiconductor packages mounted to the PCB;
[0029] FIG. 6 illustrates a BOL flipchip interconnection parallel
to the plane of the package substrate surface;
[0030] FIG. 7 illustrates the BOL flipchip interconnection of FIG.
6 perpendicular to the plane of the package substrate surface;
[0031] FIG. 8 illustrates a second BOL flipchip interconnection
parallel to the plane of the package substrate surface;
[0032] FIG. 9 illustrates the BOL flipchip interconnection of FIG.
8 perpendicular to the plane of the package substrate surface;
[0033] FIG. 10 illustrates a third BOL flipchip interconnection
parallel to the plane of the package substrate surface;
[0034] FIG. 11 illustrates a fourth BOL flipchip interconnection
parallel to the plane of the package substrate surface;
[0035] FIGS. 12a-12c illustrate a process for making the BOL
flipchip interconnection;
[0036] FIGS. 13a-13d illustrate further detail of the process for
making the BOL flipchip interconnection;
[0037] FIG. 14 illustrates a force or temperature schedule for a
process for making the BOL flipchip interconnection;
[0038] FIG. 15 illustrates a BOL flipchip interconnection having
composite bumps;
[0039] FIGS. 16a-16h illustrate various interconnect structures
formed over a semiconductor die for bonding to conductive traces on
a substrate;
[0040] FIGS. 17a-17g illustrate the semiconductor die and
interconnect structure bonded to the conductive traces;
[0041] FIGS. 18a-18d illustrate the semiconductor die with a
wedge-shaped interconnect structure bonded to the conductive
traces;
[0042] FIGS. 19a-19d illustrate another embodiment of the
semiconductor die and interconnect structure bonded to the
conductive traces;
[0043] FIGS. 20a-20c illustrate stepped bump and stud bump
interconnect structures bonded to the conductive traces;
[0044] FIGS. 21a-21b illustrate conductive traces with conductive
vias;
[0045] FIGS. 22a-22c illustrate mold underfill between the
semiconductor die and substrate;
[0046] FIG. 23 illustrates another mold underfill between the
semiconductor die and substrate;
[0047] FIG. 24 illustrates the semiconductor die and substrate
after mold underfill;
[0048] FIGS. 25a-25g illustrate various arrangements of the
conductive traces with open solder registration;
[0049] FIGS. 26a-26b illustrate the open solder registration with
patches between the conductive traces; and
[0050] FIG. 27 illustrates a POP with masking layer dam to restrain
the encapsulant during mold underfill.
DETAILED DESCRIPTION OF THE DRAWINGS
[0051] The present invention is described in one or more
embodiments in the following description with reference to the
figures, in which like numerals represent the same or similar
elements. While the invention is described in terms of the best
mode for achieving the invention's objectives, it will be
appreciated by those skilled in the art that it is intended to
cover alternatives, modifications, and equivalents as may be
included within the spirit and scope of the invention as defined by
the appended claims and their equivalents as supported by the
following disclosure and drawings.
[0052] Semiconductor devices are generally manufactured using two
complex manufacturing processes: front-end manufacturing and
back-end manufacturing. Front-end manufacturing involves the
formation of a plurality of die on the surface of a semiconductor
wafer. Each die on the wafer contains active and passive electrical
components, which are electrically connected to form functional
electrical circuits. Active electrical components, such as
transistors and diodes, have the ability to control the flow of
electrical current. Passive electrical components, such as
capacitors, inductors, resistors, and transformers, create a
relationship between voltage and current necessary to perform
electrical circuit functions.
[0053] Passive and active components are formed over the surface of
the semiconductor wafer by a series of process steps including
doping, deposition, photolithography, etching, and planarization.
Doping introduces impurities into the semiconductor material by
techniques such as ion implantation or thermal diffusion. The
doping process modifies the electrical conductivity of
semiconductor material in active devices, transforming the
semiconductor material into an insulator, conductor, or dynamically
changing the semiconductor material conductivity in response to an
electric field or base current. Transistors contain regions of
varying types and degrees of doping arranged as necessary to enable
the transistor to promote or restrict the flow of electrical
current upon the application of the electric field or base
current.
[0054] Active and passive components are formed by layers of
materials with different electrical properties. The layers can be
formed by a variety of deposition techniques determined in part by
the type of material being deposited. For example, thin film
deposition can involve chemical vapor deposition (CVD), physical
vapor deposition (PVD), electrolytic plating, and electroless
plating processes. Each layer is generally patterned to form
portions of active components, passive components, or electrical
connections between components.
[0055] The layers can be patterned using photolithography, which
involves the deposition of light sensitive material, e.g.,
photoresist, over the layer to be patterned. A pattern is
transferred from a photomask to the photoresist using light. The
portion of the photoresist pattern subjected to light is removed
using a solvent, exposing portions of the underlying layer to be
patterned. The remainder of the photoresist is removed, leaving
behind a patterned layer. Alternatively, some types of materials
are patterned by directly depositing the material into the areas or
voids formed by a previous deposition/etch process using techniques
such as electroless and electrolytic plating.
[0056] Depositing a thin film of material over an existing pattern
can exaggerate the underlying pattern and create a non-uniformly
flat surface. A uniformly flat surface is required to produce
smaller and more densely packed active and passive components.
Planarization can be used to remove material from the surface of
the wafer and produce a uniformly flat surface. Planarization
involves polishing the surface of the wafer with a polishing pad.
An abrasive material and corrosive chemical are added to the
surface of the wafer during polishing. The combined mechanical
action of the abrasive and corrosive action of the chemical removes
any irregular topography, resulting in a uniformly flat
surface.
[0057] Back-end manufacturing refers to cutting or singulating the
finished wafer into the individual die and then packaging the die
for structural support and environmental isolation. To singulate
the die, the wafer is scored and broken along non-functional
regions of the wafer called saw streets or scribes. The wafer is
singulated using a laser cutting tool or saw blade. After
singulation, the individual die are mounted to a package substrate
that includes pins or contact pads for interconnection with other
system components. Contact pads formed over the semiconductor die
are then connected to contact pads within the package. The
electrical connections can be made with solder bumps, stud bumps,
conductive paste, or wirebonds. An encapsulant or other molding
material is deposited over the package to provide physical support
and electrical isolation. The finished package is then inserted
into an electrical system and the functionality of the
semiconductor device is made available to the other system
components.
[0058] FIG. 4 illustrates electronic device 50 having a chip
carrier substrate or printed circuit board (PCB) 52 with a
plurality of semiconductor packages mounted on its surface.
Electronic device 50 can have one type of semiconductor package, or
multiple types of semiconductor packages, depending on the
application. The different types of semiconductor packages are
shown in FIG. 4 for purposes of illustration.
[0059] Electronic device 50 can be a stand-alone system that uses
the semiconductor packages to perform one or more electrical
functions. Alternatively, electronic device 50 can be a
subcomponent of a larger system. For example, electronic device 50
can be part of a cellular phone, personal digital assistant (PDA),
digital video camera (DVC), or other electronic communication
device. Alternatively, electronic device 50 can be a graphics card,
network interface card, or other signal processing card that can be
inserted into a computer. The semiconductor package can include
microprocessors, memories, application specific integrated circuits
(ASIC), logic circuits, analog circuits, RF circuits, discrete
devices, or other semiconductor die or electrical components. The
miniaturization and the weight reduction are essential for these
products to be accepted by the market. The distance between
semiconductor devices must be decreased to achieve higher
density.
[0060] In FIG. 4, PCB 52 provides a general substrate for
structural support and electrical interconnect of the semiconductor
packages mounted on the PCB. Conductive signal traces 54 are formed
over a surface or within layers of PCB 52 using evaporation,
electrolytic plating, electroless plating, screen printing, or
other suitable metal deposition process. Signal traces 54 provide
for electrical communication between each of the semiconductor
packages, mounted components, and other external system components.
Traces 54 also provide power and ground connections to each of the
semiconductor packages.
[0061] In some embodiments, a semiconductor device has two
packaging levels. First level packaging is a technique for
mechanically and electrically attaching the semiconductor die to an
intermediate carrier. Second level packaging involves mechanically
and electrically attaching the intermediate carrier to the PCB. In
other embodiments, a semiconductor device may only have the first
level packaging where the die is mechanically and electrically
mounted directly to the PCB.
[0062] For the purpose of illustration, several types of first
level packaging, including wire bond package 56 and flip chip 58,
are shown on PCB 52. Additionally, several types of second level
packaging, including ball grid array (BGA) 60, bump chip carrier
(BCC) 62, dual in-line package (DIP) 64, land grid array (LGA) 66,
multi-chip module (MCM) 68, quad flat non-leaded package (QFN) 70,
and quad flat package 72, are shown mounted on PCB 52. Depending
upon the system requirements, any combination of semiconductor
packages, configured with any combination of first and second level
packaging styles, as well as other electronic components, can be
connected to PCB 52. In some embodiments, electronic device 50
includes a single attached semiconductor package, while other
embodiments call for multiple interconnected packages. By combining
one or more semiconductor packages over a single substrate,
manufacturers can incorporate pre-made components into electronic
devices and systems. Because the semiconductor packages include
sophisticated functionality, electronic devices can be manufactured
using cheaper components and a streamlined manufacturing process.
The resulting devices are less likely to fail and less expensive to
manufacture resulting in a lower cost for consumers.
[0063] FIGS. 5a-5c show exemplary semiconductor packages. FIG. 5a
illustrates further detail of DIP 64 mounted on PCB 52.
Semiconductor die 74 includes an active region containing analog or
digital circuits implemented as active devices, passive devices,
conductive layers, and dielectric layers formed within the die and
are electrically interconnected according to the electrical design
of the die. For example, the circuit can include one or more
transistors, diodes, inductors, capacitors, resistors, and other
circuit elements formed within the active region of semiconductor
die 74. Contact pads 76 are one or more layers of conductive
material, such as aluminum (Al), copper (Cu), tin (Sn), nickel
(Ni), gold (Au), or silver (Ag), and are electrically connected to
the circuit elements formed within semiconductor die 74. During
assembly of DIP 64, semiconductor die 74 is mounted to an
intermediate carrier 78 using a gold-silicon eutectic layer or
adhesive material such as thermal epoxy or epoxy resin. The package
body includes an insulative packaging material such as polymer or
ceramic. Conductor leads 80 and bond wires 82 provide electrical
interconnect between semiconductor die 74 and PCB 52. Encapsulant
84 is deposited over the package for environmental protection by
preventing moisture and particles from entering the package and
contaminating die 74 or bond wires 82.
[0064] FIG. 5b illustrates further detail of BCC 62 mounted on PCB
52. Semiconductor die 88 is mounted over carrier 90 using an
underfill or epoxy-resin adhesive material 92. bond wires 94
provide first level packaging interconnect between contact pads 96
and 98. Molding compound or encapsulant 100 is deposited over
semiconductor die 88 and bond wires 94 to provide physical support
and electrical isolation for the device. Contact pads 102 are
formed over a surface of PCB 52 using a suitable metal deposition
process such as electrolytic plating or electroless plating to
prevent oxidation. Contact pads 102 are electrically connected to
one or more conductive signal traces 54 in PCB 52. Bumps 104 are
formed between contact pads 98 of BCC 62 and contact pads 102 of
PCB 52.
[0065] In FIG. 5c, semiconductor die 58 is mounted face down to
intermediate carrier 106 with a flip chip style first level
packaging. Active region 108 of semiconductor die 58 contains
analog or digital circuits implemented as active devices, passive
devices, conductive layers, and dielectric layers formed according
to the electrical design of the die. For example, the circuit can
include one or more transistors, diodes, inductors, capacitors,
resistors, and other circuit elements within active region 108.
Semiconductor die 58 is electrically and mechanically connected to
carrier 106 through bumps 110.
[0066] BGA 60 is electrically and mechanically connected to PCB 52
with a BGA style second level packaging using bumps 112.
Semiconductor die 58 is electrically connected to conductive signal
traces 54 in PCB 52 through bumps 110, signal lines 114, and bumps
112. A molding compound or encapsulant 116 is deposited over
semiconductor die 58 and carrier 106 to provide physical support
and electrical isolation for the device. The flip chip
semiconductor device provides a short electrical conduction path
from the active devices on semiconductor die 58 to conduction
tracks on PCB 52 in order to reduce signal propagation distance,
lower capacitance, and improve overall circuit performance. In
another embodiment, the semiconductor die 58 can be mechanically
and electrically connected directly to PCB 52 using flip chip style
first level packaging without intermediate carrier 106.
[0067] In a flipchip type semiconductor die, the interconnect is
accomplished by connecting the interconnect bump directly onto a
narrow interconnection pad rather than onto a conventional capture
pad. The width of the narrow pad is selected according to the base
diameter of the interconnect bump that is to be connected onto the
narrow pad.
[0068] Particularly, the width of the narrow pad is less than the
base diameter of the interconnect bump, e.g. in a range about 20%
to about 80%. The present flipchip interconnect provides more
efficient routing of traces on the substrate. The signal routing
can be formed entirely in a single metal layer of the substrate to
reduce the number of layers in the substrate. Forming the signal
traces in a single layer permits relaxation of some of the via,
line, and space design rules that the substrate must meet. The
simplification of the substrate greatly reduces the overall cost of
the flipchip package. The bump-on-narrow-pad (BONP) architecture
also helps eliminate such features as vias and stubs from the
substrate design and enables a microstrip controlled impedance
electrical environment for signal transmission, thereby improving
performance.
[0069] The flipchip interconnection has bumps attached to
interconnect pads on a die and mated onto corresponding narrow
interconnection pads on a substrate. A flipchip package includes a
die having bumps attached to interconnect pads in an active
surface, and a substrate having narrow interconnection pads in a
die attach surface, in which the bumps are mated onto the narrow
pads. The BONP interconnection is formed without use of a solder
mask to confine the molten solder during a re-melt stage in the
process and avoid the need for a solder mask which allows for finer
interconnection geometry.
[0070] FIGS. 6 and 7 each show, in relation to FIGS. 4 and 5a-5c, a
portion of a bump-on-lead (BOL) flipchip interconnection, in a
diagrammatic partial sectional view taken in a plane parallel to
the substrate surface, along the lines 7-7' and 6-6' in FIGS. 6 and
7, respectively. Certain features are shown as if transparent. The
interconnection is achieved by mating the bumps directly onto
respective narrow leads or traces on the substrate, referred to as
a BOL interconnect. Solder mask materials typically cannot be
resolved at such fine geometries and no solder mask is used.
Instead, the function of confining molten solder flow is
accomplished without a solder mask in the course of the assembly
process. FIG. 7 shows a partial sectional view of a package as in
FIG. 6, taken in a plane perpendicular to the plane of the package
substrate surface, along the line 7-7' in FIG. 6. FIG. 8 shows a
partial sectional view of a package as in FIG. 9, taken in a plane
perpendicular to the plane of the package substrate surface, along
the line 8-8' in FIG. 9. FIG. 9 shows a partial sectional view of a
package as in FIG. 8, taken in a plane perpendicular to the plane
of the package substrate surface, along the line 9-9' in FIG.
8.
[0071] The escape routing patterns for BOL substrates are shown in
FIGS. 6 and 8. In FIG. 6, the escape routing patterns are arranged
for semiconductor die 120 on which the die attach pads for the
interconnect balls are formed in a row near the die perimeter.
Bumps 125 are mated onto corresponding interconnect sites on escape
traces 123 in a row near the edge of the die footprint, indicated
by broken line 121. In FIG. 8, the escape routing patterns are
arranged for a semiconductor die on which the die attach pads are
located in an array of parallel rows near the die perimeter. Bumps
135 are mated onto corresponding interconnect sites on escape
traces 133 in a complementary array near the edge of the die
footprint, indicated by broken line 131.
[0072] As FIGS. 6 and 8 illustrate, the routing density achievable
using BOL interconnect can equal the finest trace pitch offered by
the substrate technology. In one embodiment, a width of the
interconnect site on the trace is less than 1.2 times a width of
the trace. The routing density is significantly higher than is
achieved in a conventional BOC arrangement, as described in FIGS.
1-3. Conventional capture pads are typically two to four times as
wide as the trace or lead width.
[0073] The BOL arrangement poses a challenge for the assembly
process because the bumping and bonding pitch must be very fine. In
the perimeter array version of BOL of FIG. 8, the bumps are
arranged on an area array providing greater space for a larger
bumping and bonding pitch and relieving the technological
challenges for the assembly process. Even in the array embodiments,
the routing traces on the substrate are at the same effective pitch
as in the perimeter row arrangement. The array arrangement relieves
the burden of fine pitch bumping and bonding without sacrificing
the fine escape routing pitch advantage.
[0074] FIGS. 6 and 7 show traces or leads 123 formed by patterning
a metal layer on a die attach surface of substrate dielectric layer
122. The electrical interconnection of semiconductor die 128 is
made by joining bumps 125 on the die directly onto leads 123.
Similarly, FIGS. 8 and 9 show traces or leads 133 formed by
patterning a metal layer on a die attach surface of substrate
dielectric layer 132. The signal escape traces are routed across
the die edge location, indicated by broken line 131, and away from
the die footprint. The electrical interconnection of semiconductor
die 138 is made by joining bumps 135 on the die directly onto leads
133. Escape traces 136 are routed across the die edge location from
interconnect sites in rows toward the interior of the die
footprint, passing between bumps 135 on more peripheral rows of
interconnect sites.
[0075] The BOL interconnection structure of FIGS. 6, 7, 8, and 9
can be produced by any of several methods, not requiring a solder
mask. In the no solder mask implementation, interconnect bumps are
affixed onto interconnect pads on the active side of the die. An
upper die attach surface of the substrate has an upper metal layer
patterned to provide the traces as appropriate for interconnection
with the arrangement of bumps on the particular die. Because no
capture pads are required, the patterned traces or leads need only
route through sites corresponding to a pattern complementary to the
arrangement of bumps on the die. In one embodiment, an
encapsulating resin adhesive is employed to confine the solder flow
during a melt phase of the interconnection process.
[0076] FIGS. 10 and 11 show two examples of a portion of a BOL
flipchip interconnection in a diagrammatic sectional view taken in
a plane parallel to the substrate surface. Certain features are
shown as if transparent. In this case, solder mask 144 is provided,
which can have a nominal mask opening diameter in the range about
80 .mu.m to 90 .mu.m. Solder mask materials can be resolved at such
pitches and, particularly, substrates can be made comparatively
inexpensively with solder masks having 90 .mu.m openings and having
alignment tolerances plus or minus 25 .mu.m. In some embodiments, a
laminate substrate is used, such as four metal layer laminates. The
traces can be at approximately 90 .mu.m pitch and the
interconnection sites can be in a 170 .mu.m area array, providing
an effective escape pitch approximately 90 .mu.m across the edge of
the die footprint, indicated by broken line 140.
[0077] In FIG. 10, the electrical interconnect is achieved by
mating the bumps directly onto interconnect site 141 on a narrow
lead or trace 142 patterned on a dielectric layer on the die attach
surface of substrate 143. In one embodiment, a width of
interconnect site 141 is less than 1.2 times a width of trace 142.
There is no pad and solder mask 144 serves to limit flow of bump
material within the bounds of mask openings 145, preventing bump
material flow away from interconnect site 141 along the wettable
lead 142. The solder mask additionally confines flow of molten bump
material between leads.
[0078] In FIG. 11, narrow leads or traces 146 are patterned on a
dielectric layer on the die attach surface of substrate 147. In one
embodiment, solder paste is deposited on interconnect sites 148 of
leads 146 to provide a fusible medium for the interconnect. The
openings 149 in solder mask 150 serve to define the paste. The
paste is dispensed, reflowed, and coined if necessary to provide
uniform surfaces to meet the bumps. The solder paste can be applied
in the course of assembly using a substrate as described above with
reference to FIG. 10. Alternatively, a substrate can be provided
with paste suitably patterned prior to assembly. Other approaches
to applying solder selectively to the interconnect sites can be
employed in the solder-on-lead embodiments, including electroless
plating and electroplating techniques. The solder-on-lead
configuration provides additional solder volume for the
interconnect, and can accordingly provide higher product yield, and
can also provide a higher die standoff.
[0079] Accordingly, in some embodiments the solder-on-lead
configuration is employed for interconnection of a die having
high-melting temperature bumps, such as a high-lead solder, used
for interconnection with ceramic substrates, onto an organic
substrate. The solder paste can be selected to have a melting
temperature low enough that the organic substrate is not damaged
during reflow. To form the interconnect in such embodiments, the
high-melting interconnect bumps are contacted with the
solder-on-lead sites, and the remelt fuses the solder-on-lead to
the bumps. Where a non-collapsible bump is used, together with a
solder-on-lead process, no preapplied adhesive is required, as the
displacement or flow of the solder is limited by the fact that only
a small quantity of solder is present at each interconnect, and the
non-collapsible bump prevents collapse of the assembly. In other
embodiments, the solder-on-lead configuration is employed for
interconnection of a die having eutectic solder bumps.
[0080] One embodiment for making a BOL interconnection is shown
diagrammatically in FIGS. 12a-12c. In FIG. 12a, substrate 151 has a
dielectric layer and metal layer on die attach surface 152. The
metal layer is patterned to provide circuitry, particularly traces
or leads 153 having sites for interconnection, on the die attach
surface. Substrate 151 is supported on a carrier or stage 154, with
a substrate surface 155 opposite die attach surface 152 facing the
support. A quantity of encapsulating resin 156 is dispensed over
die attach surface 152 of substrate 151, covering the interconnect
sites on leads 153. Semiconductor die 157 has bumps 158 attached to
die pads on active side 159. Bumps 158 include a fusible material
which contacts the mating surfaces of leads 153. A pick-and-place
tool 160 including chuck 161 picks up semiconductor die 157 by
contact of the chuck with backside 162 of the die. Using
pick-and-place tool 160, semiconductor die 157 is positioned facing
substrate 152 with the active side of the die toward the die attach
surface of substrate 151. Semiconductor die 157 and substrate 151
are aligned and moved one toward the other, as shown by arrow M, so
that bumps 158 contact the corresponding interconnect sites on
traces or leads 153 on the substrate. A force F is applied to press
bumps 158 onto mating surfaces 163 at the interconnect sites on
leads 153, as shown in FIG. 12b. The force must be sufficient to
displace adhesive 156 from between bumps 158 and mating surfaces
163 at the interconnect sites on leads 153. Bumps 158 can be
deformed by the force F, breaking the oxide film on the contacting
surface of the bumps and/or on the mating surface of leads. The
deformation of bumps 158 cause the fusible material of the bumps to
be pressed onto the top and over the edges of lead 153. Adhesive
156 is partially cured by heating to a selected temperature. At
this stage, adhesive 156 need only be partially cured, that is,
only to an extent sufficient subsequently to prevent flow of molten
solder along an interface between the adhesive and conductive
traces 153. The fusible material of bumps 158 is melted and then is
re-solidified, forming a metallurgical interconnection between the
bump and lead 153. Adhesive 156 is cured to complete the die mount
and secure the electrical interconnection at the mating surface
163, as shown in FIG. 12c. An electrical interconnection is thus
formed between bumps 158 and corresponding interconnect sites on
leads 153 in a configuration similar to FIG. 8. Other leads 164 are
interconnected at other localities, which would be visible in other
sectional views. The curing of adhesive 156 can be completed prior
to, or concurrently with, or following melting the solder.
Typically, adhesive 156 is a thermally curable adhesive, and the
extent of curing at any phase in the process is controlled by
regulating the temperature. The components can be heated and cured
by raising the temperature of the chuck on the pick and place tool,
or by raising the temperature of the substrate support.
[0081] The process is shown in further detail in FIGS. 13a-13d. In
FIG. 13a, substrate 170 has a die attach surface with conductive
traces 172, and the interconnect sites on the traces are covered
with adhesive 174. Semiconductor die 176 is positioned in relation
to substrate 170 such that the active side of the die faces the die
attach side of substrate 170, and is aligned by arrows A, such that
bumps 178 on the die are aligned with corresponding mating surfaces
on traces 172. Semiconductor die 176 and substrate 170 are moved
toward one another so that the bumps contact the respective mating
surfaces on the traces. In FIG. 13b, a force is applied to move
bumps 178 and traces 172 against one another, displacing adhesive
174, and deforming the bumps onto mating surfaces 180 and over the
edges of the traces. Deformation of bumps 178 on traces 172 breaks
the oxide film on the contact surfaces of the bumps and the mating
surfaces of the traces and establish a good electrical connection.
The deformation of bumps 178 over the edges of traces 172 helps
establish a good temporary mechanical connection. The interconnect
sites of traces 182 are out of the plane of FIG. 13b. Heat is
applied to partially cure adhesive 174 in FIG. 13c. Additional heat
is applied to raise the temperature of bumps 178 sufficiently to
cause the fusible material of the bumps to melt and complete the
cure of adhesive 174, as shown in FIG. 13d. A metallurgical
interconnection of bumps 178 is thus formed onto mating surfaces
180 at the interconnect sites on leads 172. The cured adhesive
stabilizes the die mount.
[0082] In an alternative embodiment, the adhesive can be
pre-applied to the die surface or to the bumps on the die surface,
rather than to the substrate. The adhesive can be pooled in a
reservoir. The active side of the die can be dipped in the pool and
removed, so that a quantity of the adhesive is carried on the
bumps. Using a pick-and-place tool, the die is positioned facing a
supported substrate with the active side of the die toward the die
attach surface of the substrate. The die and substrate are aligned
and moved one toward the other so that the bumps contact the
corresponding traces or leads on the substrate. Such a method is
described in U.S. Pat. No. 6,780,682, which is hereby incorporated
by reference. The process of forcing, curing, and melting are
carried out as described above.
[0083] A force or temperature schedule for the process is shown
diagrammatically in FIG. 14. The process can use force, or
temperature, or both. Time runs from left to right on the
horizontal axis. A force profile 184 is shown as a thick solid
line, and a temperature profile 186 is shown as a dotted line. The
temperature profile begins at a temperature in the range of
80-90.degree. C. The force profile begins at essentially zero
force. Beginning at an initial time t.sub.i, the force is rapidly
increased from F.sub.i to a displacement/deformation force F.sub.d
during portion 188 and held at that force for a time during portion
190. The force F.sub.d is sufficient to displace the adhesive away
from between the bumps and the mating surfaces of the leads. The
force F.sub.d is sufficient to deform the fusible portion of the
bumps onto the mating surface, breaking the oxide film, and forming
a good metal-to-metal contact. In some embodiments, the bumps flow
over the edges of the leads to establish a mechanical interlock of
the bumps and narrow pads, referred to as creep deformation. The
total amount of force required depends upon the bump material and
dimensions and upon the number of bumps.
[0084] The temperature is also rapidly increased from an initial
temperature T.sub.i to a gel temperature T.sub.g during portion
192. The gel temperature T.sub.g is a temperature sufficient to
partially cure the adhesive to a gel. The temperature ramps are set
so that there is a short lag time t.sub.def, following the moment
when F.sub.d is reached and before T.sub.g is reached, long enough
to permit the elevated force to displace the adhesive and to deform
the bumps before the partial cure of the adhesive commences. The
assembly is held during portion 190 and 194 at the
displacement/deformation pressure F.sub.d and at the gel
temperature T.sub.g for a time t.sub.gel sufficient to effect the
partial cure of the adhesive. The adhesive should become
sufficiently firm that it can subsequently maintain a good bump
profile during the solder remelt phase, that is, sufficiently firm
to prevent undesirable displacement of the molten fusible material
of the bump or flow of the molten fusible material along the
leads.
[0085] Once the adhesive has partially cured to a sufficient
extent, the pressure can be ramped down rapidly during portion 195
to substantially no force or just the weight of the components. The
temperature is then rapidly raised further during portion 196 to a
temperature T.sub.m sufficient to remelt the fusible portions of
the bumps, and the assembly is held during portion 198 at the
remelt temperature T.sub.m for a time t.sub.melt/cure sufficient to
fully form the solder remelt on the traces, and preferably
sufficient to substantially, though not necessarily fully, cure the
adhesive. The temperature is ramped down during portion 200 to the
initial temperature T.sub.i and eventually to ambient. The process
outlined in FIG. 14 can run its course over a time period of 5-10
seconds.
[0086] The adhesive in FIG. 14 can be a no-flow underfill material.
In some approaches to flipchip interconnection, the metallurgical
interconnection is formed first, and then an underfill material is
flowed into the space between the die and the substrate. The
no-flow underfill material is applied before the semiconductor die
and substrate are brought together, and the no-flow underfill
material is displaced by the approach of the bumps onto the leads,
and by the opposed surfaces of the die and the substrate. The
adhesive for the no-flow underfill material is a fast-gelling
adhesive, that is, a material that gels sufficiently at the gel
temperature in a time period in the order of 1-2 seconds. The
materials for the no-flow underfill adhesive include non-conductive
pastes.
[0087] Alternative bump structures, such as composite bumps, can be
employed in the BOL interconnects. Composite bumps have two
portions, made of different bump materials, including one which is
collapsible under reflow conditions, and one which is substantially
non-collapsible under reflow conditions. The non-collapsible
portion is attached to the interconnect site on the die. Typical
materials for the non-collapsible portion include various solders
having a high lead content. The collapsible portion is joined to
the non-collapsible portion, and it is the collapsible portion that
makes the connection with the lead. Typical materials for the
collapsible portion of the composite bump include eutectic
solder.
[0088] FIG. 15 shows a BOL interconnect employing a composite bump.
Semiconductor die 202 has die pads on the active side of the die
with composite bumps 204 that include non-collapsible portion 206
and collapsible portion 208. The collapsible portion 208 can be a
eutectic solder or a relatively low temperature melt solder. The
collapsible portion 208 contacts the mating surface of lead 210
and, where deformation of the fusible portion of the bump over the
lead is desired, the collapsible portion of the bump is deformable
under the conditions of force employed. The non-collapsible portion
206 does not deform when semiconductor die 202 is moved under
pressure against substrate 212 during processing, and does not melt
during the reflow phase of the process. The non-collapsible portion
206 can be dimensioned to provide a standoff distance between the
active surface of semiconductor die 202 and the die attach surface
of substrate 212.
[0089] The bumps as shown in FIGS. 6, 7, 8, and 9 need not
necessarily be fully collapsible bumps. The structures shown in
those figures may alternatively be made using composite bumps, or
using a solder-on-lead method, as described above.
[0090] FIGS. 16-21 describe other embodiments with various
interconnect structures which can be used with the BOL interconnect
structures, as described in FIGS. 6-15. FIG. 16a shows a
semiconductor wafer 220 with a base substrate material 222, such as
silicon, germanium, gallium arsenide, indium phosphide, or silicon
carbide, for structural support. A plurality of semiconductor die
or components 224 is formed on wafer 220 separated by saw streets
226 as described above.
[0091] FIG. 16b shows a cross-sectional view of a portion of
semiconductor wafer 220. Each semiconductor die 224 has a back
surface 228 and active surface 230 containing analog or digital
circuits implemented as active devices, passive devices, conductive
layers, and dielectric layers formed within the die and
electrically interconnected according to the electrical design and
function of the die. For example, the circuit may include one or
more transistors, diodes, and other circuit elements formed within
active surface 230 to implement analog circuits or digital
circuits, such as digital signal processor (DSP), ASIC, memory, or
other signal processing circuit. Semiconductor die 224 may also
contain integrated passive devices (IPDs), such as inductors,
capacitors, and resistors, for RF signal processing. In one
embodiment, semiconductor die 224 is a flipchip type semiconductor
die.
[0092] An electrically conductive layer 232 is formed over active
surface 230 using PVD, CVD, electrolytic plating, electroless
plating process, or other suitable metal deposition process.
Conductive layer 232 can be one or more layers of Al, Cu, Sn, Ni,
Au, Ag, or other suitable electrically conductive material.
Conductive layer 232 operates as contact pads or bumps pads
electrically connected to the circuits on active surface 230.
[0093] FIG. 16c shows a portion of semiconductor wafer 220 with an
interconnect structure formed over contact pads 232. An
electrically conductive bump material 234 is deposited over contact
pads 232 using an evaporation, electrolytic plating, electroless
plating, ball drop, or screen printing process.
[0094] Bump material 234 can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu,
solder, and combinations thereof, with an optional flux solution.
For example, bump material 234 can be eutectic Sn/Pb, high-lead
solder, or lead-free solder. Bump material 234 is generally
compliant and undergoes plastic deformation greater than about 25
.mu.m under a force equivalent to a vertical load of about 200
grams. Bump material 234 is bonded to contact pad 232 using a
suitable attachment or bonding process. For example, bump material
234 can be compression bonded to contact pad 232. Bump material 234
can also be reflowed by heating the material above its melting
point to form spherical balls or bumps 236, as shown in FIG. 16d.
In some applications, bumps 236 are reflowed a second time to
improve electrical connection to contact pad 232. Bumps 236
represent one type of interconnect structure that can be formed
over contact pad 232. The interconnect structure can also use stud
bump, micro bump, or other electrical interconnect.
[0095] FIG. 16e shows another embodiment of the interconnect
structure formed over contact pads 232 as composite bumps 238
including a non-fusible or non-collapsible portion 240 and fusible
or collapsible portion 242. The fusible or collapsible and
non-fusible or non-collapsible attributes are defined for bumps 238
with respect to reflow conditions. The non-fusible portion 240 can
be Au, Cu, Ni, high-lead solder, or lead-tin alloy. The fusible
portion 242 can be Sn, lead-free alloy, Sn--Ag alloy, Sn--Ag--Cu
alloy, Sn--Ag-indium (In) alloy, eutectic solder, tin alloys with
Ag, Cu, or Pb, or other relatively low temperature melt solder. In
one embodiment, given a contact pad 232 width or diameter of 100
.mu.m, the non-fusible portion 240 is about 45 .mu.m in height and
fusible portion 242 is about 35 .mu.m in height.
[0096] FIG. 16f shows another embodiment of the interconnect
structure formed over contact pads 232 as bump 244 over conductive
pillar 246. Bump 244 is fusible or collapsible and conductive
pillar 246 is non-fusible or non-collapsible. The fusible or
collapsible and non-fusible or non-collapsible attributes are
defined with respect to reflow conditions. Bump 244 can be Sn,
lead-free alloy, Sn--Ag alloy, Sn--Ag--Cu alloy, Sn--Ag--In alloy,
eutectic solder, tin alloys with Ag, Cu, or Pb, or other relatively
low temperature melt solder. Conductive pillar 246 can be Au, Cu,
Ni, high-lead solder, or lead-tin alloy. In one embodiment,
conductive pillar 246 is a Cu pillar and bump 244 is a solder cap.
Given a contact pad 232 width or diameter of 100 .mu.m, conductive
pillar 246 is about 45 .mu.m in height and bump 244 is about 35
.mu.m in height.
[0097] FIG. 16g shows another embodiment of the interconnect
structure formed over contact pads 232 as bump material 248 with
asperities 250. Bump material 248 is soft and deformable under
reflow conditions with a low yield strength and high elongation to
failure, similar to bump material 234. Asperities 250 are formed
with a plated surface finish and are shown exaggerated in the
figures for purposes of illustration. The scale of asperities 250
is generally in the order about 1-25 .mu.m. The asperities can also
be formed on bump 236, composite bump 238, and bump 244.
[0098] In FIG. 16h, semiconductor wafer 220 is singulated through
saw street 226 using a saw blade or laser cutting tool 252 into
individual semiconductor die 224.
[0099] FIG. 17a shows a substrate or PCB 254 with conductive trace
256. Substrate 254 can be a single-sided FR5 laminate or 2-sided
BT-resin laminate. Semiconductor die 224 is positioned so that bump
material 234 is aligned with an interconnect site on conductive
trace 256, see FIGS. 25a-25g. Alternatively, bump material 234 can
be aligned with a conductive pad or other interconnect site formed
on substrate 254. Bump material 234 is wider than conductive trace
256. In one embodiment, bump material 234 has a width of less than
100 .mu.m and conductive trace or pad 256 has a width of 35 .mu.m
for a bump pitch of 150 .mu.m. Conductive traces 256 are similar to
the escape traces and interconnect sites, as described in FIGS.
6-15, for increasing routing density.
[0100] A pressure or force F is applied to back surface 228 of
semiconductor die 224 to press bump material 234 onto conductive
trace 256. The force F can be applied with an elevated temperature.
Due to the compliant nature of bump material 234, the bump material
deforms or extrudes around the top surface and side surface of
conductive trace 256, referred to as BOL. In particular, the
application of pressure causes bump material 234 to undergo a
plastic deformation greater than about 25 .mu.m under force F
equivalent to a vertical load of about 200 grams and cover the top
surface and side surface of the conductive trace, as shown in FIG.
17b. Bump material 234 can also be metallurgically connected to
conductive trace 256 by bringing the bump material in physical
contact with the conductive trace and then reflowing the bump
material under a reflow temperature.
[0101] By making conductive trace 256 narrower than bump material
234, the conductive trace pitch can be reduced to increase routing
density and I/O count. The narrower conductive trace 256 reduces
the force F needed to deform bump material 234 around the
conductive trace. For example, the requisite force F may be 30-50%
of the force needed to deform bump material against a conductive
trace or pad that is wider than the bump material. The lower
compressive force F is useful for fine pitch interconnect and small
die to maintain coplanarity with a specified tolerance and achieve
uniform z-direction deformation and high reliability interconnect
union. In addition, deforming bump material 234 around conductive
trace 256 mechanically locks the bump to the trace to prevent die
shifting or die floating during reflow.
[0102] FIG. 17c shows bump 236 formed over contact pad 232 of
semiconductor die 224. Semiconductor die 224 is positioned so that
bump 236 is aligned with an interconnect site on conductive trace
256. Alternatively, bump 236 can be aligned with a conductive pad
or other interconnect site formed on substrate 254. Bump 236 is
wider than conductive trace 256. Conductive traces 256 are similar
to the escape traces and interconnect sites, as described in FIGS.
6-15, for increasing routing density.
[0103] A pressure or force F is applied to back surface 228 of
semiconductor die 224 to press bump 236 onto conductive trace 256.
The force F can be applied with an elevated temperature. Due to the
compliant nature of bump 236, the bump deforms or extrudes around
the top surface and side surface of conductive trace 256. In
particular, the application of pressure causes bump material 236 to
undergo a plastic deformation and cover the top surface and side
surface of conductive trace 256. Bump 236 can also be
metallurgically connected to conductive trace 256 by bringing the
bump in physical contact with the conductive trace under reflow
temperature.
[0104] By making conductive trace 256 narrower than bump 236, the
conductive trace pitch can be reduced to increase routing density
and I/O count. The narrower conductive trace 256 reduces the force
F needed to deform bump 236 around the conductive trace. For
example, the requisite force F may be 30-50% of the force needed to
deform a bump against a conductive trace or pad that is wider than
the bump. The lower compressive force F is useful for fine pitch
interconnect and small die to maintain coplanarity within a
specified tolerance and achieve uniform z-direction deformation and
high reliability interconnect union. In addition, deforming bump
236 around conductive trace 256 mechanically locks the bump to the
trace to prevent die shifting or die floating during reflow.
[0105] FIG. 17d shows composite bump 238 formed over contact pad
232 of semiconductor die 224. Semiconductor die 224 is positioned
so that composite bump 238 is aligned with an interconnect site on
conductive trace 256. Alternatively, composite bump 238 can be
aligned with a conductive pad or other interconnect site formed on
substrate 254. Composite bump 238 is wider than conductive trace
256. Conductive traces 256 are similar to the escape traces and
interconnect sites, as described in FIGS. 6-15, for increasing
routing density.
[0106] A pressure or force F is applied to back surface 228 of
semiconductor die 224 to press fusible portion 242 onto conductive
trace 256. The force F can be applied with an elevated temperature.
Due to the compliant nature of fusible portion 242, the fusible
portion deforms or extrudes around the top surface and side
surfaces of conductive trace 256. In particular, the application of
pressure causes fusible portion 242 to undergo a plastic
deformation and cover the top surface and side surfaces of
conductive trace 256. Composite bump 238 can also be
metallurgically connected to conductive trace 256 by bringing
fusible portion 242 in physical contact with the conductive trace
under reflow temperature. The non-fusible portion 240 does not melt
or deform during the application of pressure or temperature and
retains its height and shape as a vertical standoff between
semiconductor die 224 and substrate 254. The additional
displacement between semiconductor die 224 and substrate 254
provides greater coplanarity tolerance between the mating
surfaces.
[0107] During a reflow process, a large number (e.g., thousands) of
composite bumps 238 on semiconductor die 224 are attached to
interconnect sites on conductive trace 256 of substrate 254. Some
of the bumps 238 may fail to properly connect to conductive trace
256, particularly if die 224 is warped. Recall that composite bump
238 can be wider than conductive trace 256. With a proper force
applied, the fusible portion 242 deforms or extrudes around the top
surface and side surfaces of conductive trace 256 and mechanically
locks composite bump 238 to the conductive trace. The mechanical
interlock is formed by nature of the fusible portion 242 being
softer and more compliant than conductive trace 256 and therefore
deforming over the top surface and around the side surfaces of the
conductive trace for greater contact surface area. The mechanical
interlock between composite bump 238 and conductive trace 256 holds
the bump to the conductive trace during reflow, i.e., the bump and
conductive trace do not lose contact. Accordingly, composite bump
238 mating to conductive trace 256 reduces bump interconnect
failures.
[0108] FIG. 17e shows conductive pillar 246 and bump 244 formed
over contact pad 232 of semiconductor die 224. Semiconductor die
224 is positioned so that bump 244 is aligned with an interconnect
site on conductive trace 256. Alternatively, bump 244 can be
aligned with a conductive pad or other interconnect site formed on
substrate 254. Bump 244 is wider than conductive trace 256.
Conductive traces 256 are similar to the escape traces and
interconnect sites, as described in FIGS. 6-15, for increasing
routing density.
[0109] A pressure or force F is applied to back surface 228 of
semiconductor die 224 to press bump 244 onto conductive trace 256.
The force F can be applied with an elevated temperature. Due to the
compliant nature of bump 244, the bump deforms or extrudes around
the top surface and side surfaces of conductive trace 256. In
particular, the application of pressure causes bump 244 to undergo
a plastic deformation and cover the top surface and side surfaces
of conductive trace 256. Conductive pillar 246 and bump 244 can
also be metallurgically connected to conductive trace 256 by
bringing the bump in physical contact with the conductive trace
under reflow temperature. Conductive pillar 246 does not melt or
deform during the application of pressure or temperature and
retains its height and shape as a vertical standoff between
semiconductor die 224 and substrate 254. The additional
displacement between semiconductor die 224 and substrate 254
provides greater coplanarity tolerance between the mating surfaces.
The wider bump 244 and narrower conductive trace 256 have similar
low requisite compressive force and mechanical locking features and
advantages described above for bump material 234 and bump 236.
[0110] FIG. 17f shows bump material 248 with asperities 250 formed
over contact pad 232 of semiconductor die 224. Semiconductor die
224 is positioned so that bump material 248 is aligned with an
interconnect site on conductive trace 256. Alternatively, bump
material 248 can be aligned with a conductive pad or other
interconnect site formed on substrate 254. Bump material 248 is
wider than conductive trace 256. A pressure or force F is applied
to back surface 228 of semiconductor die 224 to press bump material
248 onto conductive trace 256. The force F can be applied with an
elevated temperature. Due to the compliant nature of bump material
248, the bump deforms or extrudes around the top surface and side
surfaces of conductive trace 256. In particular, the application of
pressure causes bump material 248 to undergo a plastic deformation
and cover the top surface and side surfaces of conductive trace
256. In addition, asperities 250 are metallurgically connected to
conductive trace 256. Asperities 250 are sized on the order about
1-25 .mu.m.
[0111] FIG. 17g shows a substrate or PCB 258 with trapezoidal
conductive trace 260 having angled or sloped sides. Bump material
261 is formed over contact pad 232 of semiconductor die 224.
Semiconductor die 224 is positioned so that bump material 261 is
aligned with an interconnect site on conductive trace 260.
Alternatively, bump material 261 can be aligned with a conductive
pad or other interconnect site formed on substrate 258. Bump
material 261 is wider than conductive trace 260. Conductive traces
260 are similar to the escape traces and interconnect sites, as
described in FIGS. 6-15, for increasing routing density.
[0112] A pressure or force F is applied to back surface 228 of
semiconductor die 224 to press bump material 261 onto conductive
trace 260. The force F can be applied with an elevated temperature.
Due to the compliant nature of bump material 261, the bump material
deforms or extrudes around the top surface and side surfaces of
conductive trace 260. In particular, the application of pressure
causes bump material 261 to undergo a plastic deformation under
force F to cover the top surface and the angled side surfaces of
conductive trace 260. Bump material 261 can also be metallurgically
connected to conductive trace 260 by bringing the bump material in
physical contact with the conductive trace and then reflowing the
bump material under a reflow temperature.
[0113] FIGS. 18a-18d show a BOL embodiment of semiconductor die 224
and elongated composite bump 262 having a non-fusible or
non-collapsible portion 264 and fusible or collapsible portion 266.
The non-fusible portion 264 can be Au, Cu, Ni, high-lead solder, or
lead-tin alloy. The fusible portion 266 can be Sn, lead-free alloy,
Sn--Ag alloy, Sn--Ag--Cu alloy, Sn--Ag--In alloy, eutectic solder,
tin alloys with Ag, Cu, or Pb, or other relatively low temperature
melt solder. The non-fusible portion 264 makes up a larger part of
composite bump 262 than the fusible portion 266. The non-fusible
portion 264 is fixed to contact pad 232 of semiconductor die
224.
[0114] Semiconductor die 224 is positioned so that composite bump
262 is aligned with an interconnect site on conductive trace 268
formed on substrate 270, as shown in FIG. 18a. Composite bump 262
is tapered along conductive trace 268, i.e., the composite bump has
a wedge shape, longer along a length of conductive trace 268 and
narrower across the conductive trace. The tapered aspect of
composite bump 262 occurs along the length of conductive trace 268.
The view in FIG. 18a shows the shorter aspect or narrowing taper
co-linear with conductive trace 268. The view in FIG. 18b, normal
to FIG. 18a, shows the longer aspect of the wedge-shaped composite
bump 262. The shorter aspect of composite bump 262 is wider than
conductive trace 268. The fusible portion 266 collapses around
conductive trace 268 upon application of pressure and/or reflow
with heat, as shown in FIGS. 18c and 18d. The non-fusible portion
264 does not melt or deform during reflow and retains its form and
shape. The non-fusible portion 264 can be dimensioned to provide a
standoff distance between semiconductor die 224 and substrate 270.
A finish such as Cu OSP can be applied to substrate 270. Conductive
traces 268 are similar to the escape traces and interconnect sites,
as described in FIGS. 6-15, for increasing routing density.
[0115] During a reflow process, a large number (e.g., thousands) of
composite bumps 262 on semiconductor die 224 are attached to
interconnect sites on conductive trace 268 of substrate 270. Some
of the bumps 262 may fail to properly connect to conductive trace
268, particularly if semiconductor die 224 is warped. Recall that
composite bump 262 can be wider than conductive trace 268. With a
proper force applied, the fusible portion 266 deforms or extrudes
around the top surface and side surfaces of conductive trace 268
and mechanically locks composite bump 262 to the conductive trace.
The mechanical interlock is formed by nature of the fusible portion
266 being softer and more compliant than conductive trace 268 and
therefore deforming around the top surface and side surfaces of the
conductive trace for greater contact area. The wedge-shape of
composite bump 262 increases contact area between the bump and
conductive trace, e.g., along the longer aspect of FIGS. 18b and
18d, without sacrificing pitch along the shorter aspect of FIGS.
18a and 18c. The mechanical interlock between composite bump 262
and conductive trace 268 holds the bump to the conductive trace
during reflow, i.e., the bump and conductive trace do not lose
contact. Accordingly, composite bump 262 mating to conductive trace
268 reduces bump interconnect failures.
[0116] FIGS. 19a-19d show a BOL embodiment of semiconductor die 224
with bump material 274 formed over contact pads 232, similar to
FIG. 16c. In FIG. 19a, bump material 274 is generally compliant and
undergoes plastic deformation greater than about 25 .mu.m under a
force equivalent to a vertical load of about 200 grams. Bump
material 274 is wider than conductive trace 276 on substrate 278. A
plurality of asperities 280 is formed on conductive trace 276 with
a height on the order about 1-25 .mu.m.
[0117] Semiconductor die 224 is positioned so that bump material
274 is aligned with an interconnect site on conductive trace 276.
Alternatively, bump material 274 can be aligned with a conductive
pad or other interconnect site formed on substrate 278. A pressure
or force F is applied to back surface 228 of semiconductor die 224
to press bump material 274 onto conductive trace 276 and asperities
280, as shown in FIG. 19b. The force F can be applied with an
elevated temperature. Due to the compliant nature of bump material
274, the bump material deforms or extrudes around the top surface
and side surfaces of conductive trace 276 and asperities 280. In
particular, the application of pressure causes bump material 274 to
undergo a plastic deformation and cover the top surface and side
surfaces of conductive trace 276 and asperities 280. The plastic
flow of bump material 274 creates macroscopic mechanical
interlocking points between the bump material and the top surface
and side surfaces of conductive trace 276 and asperities 280. The
plastic flow of bump material 274 occurs around the top surface and
side surfaces of conductive trace 276 and asperities 280, but does
not extend excessively onto substrate 278, which could cause
electrical shorting and other defects. The mechanical interlock
between the bump material and the top surface and side surfaces of
conductive trace 276 and asperities 280 provides a robust
connection with greater contact area between the respective
surfaces, without significantly increasing the bonding force. The
mechanical interlock between the bump material and the top surface
and side surfaces of conductive trace 276 and asperities 280 also
reduces lateral die shifting during subsequent manufacturing
processes, such as encapsulation.
[0118] FIG. 19c shows another BOL embodiment with bump material 274
narrower than conductive trace 276. A pressure or force F is
applied to back surface 228 of semiconductor die 224 to press bump
material 274 onto conductive trace 276 and asperities 280. The
force F can be applied with an elevated temperature. Due to the
compliant nature of bump material 274, the bump material deforms or
extrudes over the top surface of conductive trace 276 and
asperities 280. In particular, the application of pressure causes
bump material 274 to undergo a plastic deformation and cover the
top surface of conductive trace 276 and asperities 280. The plastic
flow of bump material 274 creates macroscopic mechanical
interlocking points between the bump material and the top surface
of conductive trace 276 and asperities 280. The mechanical
interlock between the bump material and the top surface of
conductive trace 276 and asperities 280 provides a robust
connection with greater contact area between the respective
surfaces, without significantly increasing the bonding force. The
mechanical interlock between the bump material and the top surface
of conductive trace 276 and asperities 280 also reduces lateral die
shifting during subsequent manufacturing processes, such as
encapsulation.
[0119] FIG. 19d shows another BOL embodiment with bump material 274
formed over an edge of conductive trace 276, i.e., part of the bump
material is over the conductive trace and part of the bump material
is not over the conductive trace. A pressure or force F is applied
to back surface 228 of semiconductor die 224 to press bump material
274 onto conductive trace 276 and asperities 280. The force F can
be applied with an elevated temperature. Due to the compliant
nature of bump material 274, the bump material deforms or extrudes
over the top surface and side surfaces of conductive trace 276 and
asperities 280. In particular, the application of pressure causes
bump material 274 to undergo a plastic deformation and cover the
top surface and side surfaces of conductive trace 276 and
asperities 280. The plastic flow of bump material 274 creates
macroscopic mechanical interlocking between the bump material and
the top surface and side surfaces of conductive trace 276 and
asperities 280. The mechanical interlock between the bump material
and the top surface and side surfaces of conductive trace 276 and
asperities 280 provides a robust connection with greater contact
area between the respective surfaces, without significantly
increasing the bonding force. The mechanical interlock between the
bump material and the top surface and side surfaces of conductive
trace 276 and asperities 280 also reduces lateral die shifting
during subsequent manufacturing processes, such as
encapsulation.
[0120] FIGS. 20a-20c show a BOL embodiment of semiconductor die 224
with bump material 284 formed over contact pads 232, similar to
FIG. 16c. A tip 286 extends from the body of bump material 284 as a
stepped bump with tip 286 narrower than the body of bump material
284, as shown in FIG. 20a. Semiconductor die 224 is positioned so
that bump material 284 is aligned with an interconnect site on
conductive trace 288 on substrate 290. More specifically, tip 286
is centered over an interconnect site on conductive trace 288.
Alternatively, bump material 284 and tip 286 can be aligned with a
conductive pad or other interconnect site formed on substrate 290.
Bump material 284 is wider than conductive trace 288 on substrate
290.
[0121] Conductive trace 288 is generally compliant and undergoes
plastic deformation greater than about 25 .mu.m under a force
equivalent to a vertical load of about 200 grams. A pressure or
force F is applied to back surface 228 of semiconductor die 224 to
press tip 284 onto conductive trace 288. The force F can be applied
with an elevated temperature. Due to the compliant nature of
conductive trace 288, the conductive trace deforms around tip 286,
as shown in FIG. 20b. In particular, the application of pressure
causes conductive trace 288 to undergo a plastic deformation and
cover the top surface and side surfaces of tip 286.
[0122] FIG. 20c shows another BOL embodiment with rounded bump
material 294 formed over contact pads 232. A tip 296 extends from
the body of bump material 294 to form a stud bump with the tip
narrower than the body of bump material 294. Semiconductor die 224
is positioned so that bump material 294 is aligned with an
interconnect site on conductive trace 298 on substrate 300. More
specifically, tip 296 is centered over an interconnect site on
conductive trace 298. Alternatively, bump material 294 and tip 296
can be aligned with a conductive pad or other interconnect site
formed on substrate 300. Bump material 294 is wider than conductive
trace 298 on substrate 300.
[0123] Conductive trace 298 is generally compliant and undergoes
plastic deformation greater than about 25 .mu.m under a force
equivalent to a vertical load of about 200 grams. A pressure or
force F is applied to back surface 228 of semiconductor die 224 to
press tip 296 onto conductive trace 298. The force F can be applied
with an elevated temperature. Due to the compliant nature of
conductive trace 298, the conductive trace deforms around tip 296.
In particular, the application of pressure causes conductive trace
298 to undergo a plastic deformation and cover the top surface and
side surfaces of tip 296.
[0124] The conductive traces described in FIGS. 17a-17g, 18a-18d,
and 19a-19d can also be compliant material as described in FIGS.
20a-20c.
[0125] FIGS. 21a-21b show a BOL embodiment of semiconductor die 224
with bump material 304 formed over contact pads 232, similar to
FIG. 16c. Bump material 304 is generally compliant and undergoes
plastic deformation greater than about 25 .mu.m under a force
equivalent to a vertical load of about 200 grams. Bump material 304
is wider than conductive trace 306 on substrate 308. A conductive
via 310 is formed through conductive trace 306 with an opening 312
and conductive sidewalls 314, as shown in FIG. 21a. Conductive
traces 306 are similar to the escape traces and interconnect sites,
as described in FIGS. 6-15, for increasing routing density.
[0126] Semiconductor die 224 is positioned so that bump material
304 is aligned with an interconnect site on conductive trace 306,
see FIGS. 25a-25g. Alternatively, bump material 304 can be aligned
with a conductive pad or other interconnect site formed on
substrate 308. A pressure or force F is applied to back surface 228
of semiconductor die 224 to press bump material 304 onto conductive
trace 306 and into opening 312 of conductive via 310. The force F
can be applied with an elevated temperature. Due to the compliant
nature of bump material 304, the bump material deforms or extrudes
around the top surface and side surfaces of conductive trace 306
and into opening 312 of conductive vias 310, as shown in FIG. 21b.
In particular, the application of pressure causes bump material 304
to undergo a plastic deformation and cover the top surface and side
surfaces of conductive trace 306 and into opening 312 of conductive
via 310. Bump material 304 is thus electrically connected to
conductive trace 306 and conductive sidewalls 314 for z-direction
vertical interconnect through substrate 308. The plastic flow of
bump material 304 creates a mechanical interlock between the bump
material and the top surface and side surfaces of conductive trace
306 and opening 312 of conductive via 310. The mechanical interlock
between the bump material and the top surface and side surfaces of
conductive trace 306 and opening 312 of conductive via 310 provides
a robust connection with greater contact area between the
respective surfaces, without significantly increasing the bonding
force. The mechanical interlock between the bump material and the
top surface and side surfaces of conductive trace 306 and opening
312 of conductive via 310 also reduces lateral die shifting during
subsequent manufacturing processes, such as encapsulation. Since
conductive via 310 is formed within the interconnect site with bump
material 304, the total substrate interconnect area is reduced.
[0127] In the BOL embodiments of FIGS. 17a-17g, 18a-18d, 19a-19d,
20a-20c, and 21a-21b, by making the conductive trace narrower than
the interconnect structure, the conductive trace pitch can be
reduced to increase routing density and I/O count. The narrower
conductive trace reduces the force F needed to deform the
interconnect structure around the conductive trace. For example,
the requisite force F may be 30-50% of the force needed to deform a
bump against a conductive trace or pad that is wider than the bump.
The lower compressive force F is useful for fine pitch interconnect
and small die to maintain coplanarity within a specified tolerance
and achieve uniform z-direction deformation and high reliability
interconnect union. In addition, deforming the interconnect
structure around the conductive trace mechanically locks the bump
to the trace to prevent die shifting or die floating during
reflow.
[0128] FIGS. 22a-22c show a mold underfill (MUF) process to deposit
encapsulant around the bumps between the semiconductor die and
substrate. FIG. 22a shows semiconductor die 224 mounted to
substrate 254 using bump material 234 from FIG. 17b and placed
between upper mold support 316 and lower mold support 318 of chase
mold 320. The other semiconductor die and substrate combinations
from FIGS. 17a-17g, 18a-18d, 19a-19d, 20a-20c, and 21a-21b can be
placed between upper mold support 316 and lower mold support 318 of
chase mold 320. The upper mold support 316 includes compressible
releasing film 322.
[0129] In FIG. 22b, upper mold support 316 and lower mold support
318 are brought together to enclose semiconductor die 224 and
substrate 254 with an open space over the substrate and between the
semiconductor die and substrate. Compressible releasing film 322
conforms to back surface 228 and side surfaces of semiconductor die
224 to block formation of encapsulant on these surfaces. An
encapsulant 324 in a liquid state is injected into one side of
chase mold 320 with nozzle 326 while an optional vacuum assist 328
draws pressure from the opposite side to uniformly fill the open
space over substrate 254 and the open space between semiconductor
die 224 and substrate 254 with the encapsulant. Encapsulant 324 can
be polymer composite material, such as epoxy resin with filler,
epoxy acrylate with filler, or polymer with proper filler.
Encapsulant 324 is non-conductive and environmentally protects the
semiconductor device from external elements and contaminants.
Compressible material 322 prevents encapsulant 324 from flowing
over back surface 228 and around the side surfaces of semiconductor
die 224. Encapsulant 324 is cured. The back surface 228 and side
surfaces of semiconductor die 224 remain exposed from encapsulant
324.
[0130] FIG. 22c shows an embodiment of MUF and mold overfill (MOF),
i.e., without compressible material 322. Semiconductor die 224 and
substrate 254 are placed between upper mold support 316 and lower
mold support 318 of chase mold 320. The upper mold support 316 and
lower mold support 318 are brought together to enclose
semiconductor die 224 and substrate 254 with an open space over the
substrate, around the semiconductor die, and between the
semiconductor die and substrate. Encapsulant 324 in a liquid state
is injected into one side of chase mold 320 with nozzle 326 while
an optional vacuum assist 328 draws pressure from the opposite side
to uniformly fill the open space around semiconductor die 224 and
over substrate 254 and the open space between semiconductor die 224
and substrate 254 with the encapsulant. Encapsulant 324 is
cured.
[0131] FIG. 23 shows another embodiment of depositing encapsulant
around semiconductor die 224 and in the gap between semiconductor
die 224 and substrate 254. Semiconductor die 224 and substrate 254
are enclosed by dam 330. Encapsulant 332 is dispensed from nozzles
334 in a liquid state into dam 330 to fill the open space over
substrate 254 and the open space between semiconductor die 224 and
substrate 254. The volume of encapsulant 332 dispensed from nozzles
334 is controlled to fill dam 330 without covering back surface 228
or the side surfaces of semiconductor die 224. Encapsulant 332 is
cured.
[0132] FIG. 24 shows semiconductor die 224 and substrate 254 after
the MUF process from FIGS. 22a, 22c, and 23. Encapsulant 324 is
uniformly distributed over substrate 254 and around bump material
234 between semiconductor die 224 and substrate 254.
[0133] FIGS. 25a-25g show top views of various conductive trace
layouts on substrate or PCB 340. In FIG. 25a, conductive trace 342
is a straight conductor with integrated bump pad or interconnect
site 344 formed on substrate 340. The sides of substrate bump pad
344 can be co-linear with conductive trace 342. In the prior art, a
solder registration opening (SRO) is typically formed over the
interconnect site to contain the bump material during reflow. The
SRO increases interconnect pitch and reduces I/O count. In
contrast, masking layer 346 can be formed over a portion of
substrate 340; however, the masking layer is not formed around
substrate bump pad 344 of conductive trace 342. That is, the
portion of conductive trace 342 designed to mate with the bump
material is devoid of any SRO of masking layer 346 that would have
been used for bump containment during reflow.
[0134] Semiconductor die 224 is placed over substrate 340 and the
bump material is aligned with substrate bump pads 344. The bump
material is electrically and metallurgically connected to substrate
bump pads 344 by bringing the bump material in physical contact
with the bump pad and then reflowing the bump material under a
reflow temperature.
[0135] In another embodiment, an electrically conductive bump
material is deposited over substrate bump pad 344 using an
evaporation, electrolytic plating, electroless plating, ball drop,
or screen printing process. The bump material can be Al, Sn, Ni,
Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with an
optional flux solution. For example, the bump material can be
eutectic Sn/Pb, high-lead solder, or lead-free solder. The bump
material is bonded to substrate bump pad 344 using a suitable
attachment or bonding process. In one embodiment, the bump material
is reflowed by heating the material above its melting point to form
bump or interconnect 348, as shown in FIG. 25b. In some
applications, bump 348 is reflowed a second time to improve
electrical contact to substrate bump pad 344. The bump material
around the narrow substrate bump pad 344 maintains die placement
during reflow.
[0136] In high routing density applications, it is desirable to
minimize escape pitch of conductive traces 342. The escape pitch
between conductive traces 342 can be reduced by eliminating the
masking layer for the purpose of reflow containment, i.e., by
reflowing the bump material without a masking layer. Since no SRO
is formed around die bump pad 232 or substrate bump pad 344,
conductive traces 342 can be formed with a finer pitch, i.e.,
conductive trace 342 can be disposed closer together or to nearby
structures. With no SRO around substrate bump pad 344, the pitch
between conductive traces 342 is given as P=D+PLT+W/2, wherein D is
the base diameter of bump 348, PLT is die placement tolerance, and
W is the width of conductive trace 342. In one embodiment, given a
bump base diameter of 100 .mu.m, PLT of 10 .mu.m, and trace line
width of 30 .mu.m, the minimum escape pitch of conductive trace 342
is 125 .mu.m. The mask-less bump formation eliminates the need to
account for the ligament spacing of masking material between
adjacent openings, solder mask registration tolerance (SRT), and
minimum resolvable SRO, as found in the prior art.
[0137] When the bump material is reflowed without a masking layer
to metallurgically and electrically connect die bump pad 232 to
substrate bump pad 344, the wetting and surface tension causes the
bump material to maintain self-confinement and be retained within
the space between die bump pad 232 and substrate bump pad 344 and
portion of substrate 340 immediately adjacent to conductive trace
342 substantially within the footprint of the bump pads.
[0138] To achieve the desired self-confinement property, the bump
material can be immersed in a flux solution prior to placement on
die bump pad 232 or substrate bump pad 344 to selectively render
the region contacted by the bump material more wettable than the
surrounding area of conductive traces 342. The molten bump material
remains confined substantially within the area defined by the bump
pads due to the wettable properties of the flux solution. The bump
material does not run-out to the less wettable areas. A thin oxide
layer or other insulating layer can be formed over areas where bump
material is not intended to make the area less wettable. Hence,
masking layer 340 is not needed around die bump pad 232 or
substrate bump pad 344.
[0139] FIG. 25c shows another embodiment of parallel conductive
traces 352 as a straight conductor with integrated rectangular bump
pad or interconnect site 354 formed on substrate 350. In this case,
substrate bump pad 354 is wider than conductive trace 352, but less
than the width of the mating bump. The sides of substrate bump pad
354 can be parallel to conductive trace 352. Masking layer 356 can
be formed over a portion of substrate 350; however, the masking
layer is not formed around substrate bump pad 354 of conductive
trace 352. That is, the portion of conductive trace 352 designed to
mate with the bump material is devoid of any SRO of masking layer
356 that would have been used for bump containment during
reflow.
[0140] FIG. 25d shows another embodiment of conductive traces 360
and 362 arranged in an array of multiple rows with offset
integrated bump pad or interconnect site 364 formed on substrate
366 for maximum interconnect escape routing density and capacity.
Alternate conductive traces 360 and 362 include an elbow for
routing to bump pads 364. The sides of each substrate bump pad 364
is co-linear with conductive traces 360 and 362. Masking layer 368
can be formed over a portion of substrate 366; however, masking
layer 368 is not formed around substrate bump pad 364 of conductive
traces 360 and 362. That is, the portion of conductive trace 360
and 362 designed to mate with the bump material is devoid of any
SRO of masking layer 368 that would have been used for bump
containment during reflow.
[0141] FIG. 25e shows another embodiment of conductive traces 370
and 372 arranged in an array of multiple rows with offset
integrated bump pad or interconnect site 374 formed on substrate
376 for maximum interconnect escape routing density and capacity.
Alternate conductive traces 370 and 372 include an elbow for
routing to bump pads 374. In this case, substrate bump pad 374 is
rounded and wider than conductive traces 370 and 372, but less than
the width of the mating interconnect bump material. Masking layer
378 can be formed over a portion of substrate 376; however, masking
layer 378 is not formed around substrate bump pad 374 of conductive
traces 370 and 372. That is, the portion of conductive trace 370
and 372 designed to mate with the bump material is devoid of any
SRO of masking layer 378 that would have been used for bump
containment during reflow.
[0142] FIG. 25f shows another embodiment of conductive traces 380
and 382 arranged in an array of multiple rows with offset
integrated bump pad or interconnect site 384 formed on substrate
386 for maximum interconnect escape routing density and capacity.
Alternate conductive traces 380 and 382 include an elbow for
routing to bump pads 384. In this case, substrate bump pad 384 is
rectangular and wider than conductive traces 380 and 382, but less
than the width of the mating interconnect bump material. Masking
layer 388 can be formed over a portion of substrate 386; however,
masking layer 388 is not formed around substrate bump pad 384 of
conductive traces 380 and 382. That is, the portion of conductive
trace 380 and 382 designed to mate with the bump material is devoid
of any SRO of masking layer 388 that would have been used for bump
containment during reflow.
[0143] As one example of the interconnect process, semiconductor
die 224 is placed over substrate 366 and bump material 234 is
aligned with substrate bump pads 364 from FIG. 25d. Bump material
234 is electrically and metallurgically connected to substrate bump
pad 364 by pressing the bump material or by bringing the bump
material in physical contact with the bump pad and then reflowing
the bump material under a reflow temperature, as described for
FIGS. 17a-17g, 18a-18d, 19a-19d, 20a-20c, and 21a-21b.
[0144] In another embodiment, an electrically conductive bump
material is deposited over substrate bump pad 364 using an
evaporation, electrolytic plating, electroless plating, ball drop,
or screen printing process. The bump material can be Al, Sn, Ni,
Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with an
optional flux solution. For example, the bump material can be
eutectic Sn/Pb, high-lead solder, or lead-free solder. The bump
material is bonded to substrate bump pad 364 using a suitable
attachment or bonding process. In one embodiment, the bump material
is reflowed by heating the material above its melting point to form
bump or interconnect 390, as shown in FIG. 25g. In some
applications, bump 390 is reflowed a second time to improve
electrical contact to substrate bump pad 364. The bump material
around the narrow substrate bump pad 364 maintains die placement
during reflow. Bump material 234 or bumps 390 can also be formed on
substrate bump pad configurations of FIGS. 25a-25g.
[0145] In high routing density applications, it is desirable to
minimize escape pitch of conductive traces 360 and 362 or other
conductive trace configurations of FIGS. 25a-25g. The escape pitch
between conductive traces 360 and 362 can be reduced by eliminating
the masking layer for the purpose of reflow containment, i.e., by
reflowing the bump material without a masking layer. Since no SRO
is formed around die bump pad 232 or substrate bump pad 364,
conductive traces 360 and 362 can be formed with a finer pitch,
i.e., conductive traces 360 and 362 can be disposed closer together
or to nearby structures. With no SRO around substrate bump pad 364,
the pitch between conductive traces 360 and 362 is given as
P=D/2+PLT+W/2, wherein D is the base diameter of bump 390, PLT is
die placement tolerance, and W is the width of conductive traces
360 and 362. In one embodiment, given a bump base diameter of 100
.mu.m, PLT of 10 .mu.m, and trace line width of 30 .mu.m, the
minimum escape pitch of conductive traces 360 and 362 is 125 .mu.m.
The mask-less bump formation eliminates the need to account for the
ligament spacing of masking material between adjacent openings,
SRT, and minimum resolvable SRO, as found in the prior art.
[0146] When the bump material is reflowed without a masking layer
to metallurgically and electrically connect die bump pad 232 to
substrate bump pad 364, the wetting and surface tension causes the
bump material to maintain self-confinement and be retained within
the space between die bump pad 232 and substrate bump pad 364 and
portion of substrate 366 immediately adjacent to conductive traces
360 and 362 substantially within the footprint of the bump
pads.
[0147] To achieve the desired self-confinement property, the bump
material can be immersed in a flux solution prior to placement on
die bump pad 232 or substrate bump pad 364 to selectively render
the region contacted by the bump material more wettable than the
surrounding area of conductive traces 360 and 362. The molten bump
material remains confined substantially within the area defined by
the bump pads due to the wettable properties of the flux solution.
The bump material does not run-out to the less wettable areas. A
thin oxide layer or other insulating layer can be formed over areas
where bump material is not intended to make the area less wettable.
Hence, masking layer 368 is not needed around die bump pad 232 or
substrate bump pad 364.
[0148] In FIG. 26a, masking layer 392 is deposited over a portion
of conductive traces 394 and 396. However, masking layer 392 is not
formed over integrated bump pads 398. Consequently, there is no SRO
for each bump pad 398 on substrate 400. A non-wettable masking
patch 402 is formed on substrate 400 interstitially within the
array of integrated bump pads 398, i.e., between adjacent bump
pads. The masking patch 402 can also be formed on semiconductor die
224 interstitially within the array of die bump pads 398. More
generally, the masking patch is formed in close proximity to the
integrated bump pads in any arrangement to prevent run-out to less
wettable areas.
[0149] Semiconductor die 224 is placed over substrate 400 and the
bump material is aligned with substrate bump pads 398. The bump
material is electrically and metallurgically connected to substrate
bump pad 398 by pressing the bump material or by bringing the bump
material in physical contact with the bump pad and then reflowing
the bump material under a reflow temperature, as described for
FIGS. 17a-17g, 18a-18d, 19a-19d, 20a-20c, and 21a-21b.
[0150] In another embodiment, an electrically conductive bump
material is deposited over die integrated bump pads 398 using an
evaporation, electrolytic plating, electroless plating, ball drop,
or screen printing process. The bump material can be Al, Sn, Ni,
Au, Ag, Pb, Bi, Cu, solder, and combinations thereof, with an
optional flux solution. For example, the bump material can be
eutectic Sn/Pb, high-lead solder, or lead-free solder. The bump
material is bonded to integrated bump pads 398 using a suitable
attachment or bonding process. In one embodiment, the bump material
is reflowed by heating the material above its melting point to form
spherical balls or bumps 404, as shown in FIG. 26b. In some
applications, bumps 404 are reflowed a second time to improve
electrical contact to integrated bump pads 398. The bumps can also
be compression bonded to integrated bump pads 398. Bumps 404
represent one type of interconnect structure that can be formed
over integrated bump pads 398. The interconnect structure can also
use stud bump, micro bump, or other electrical interconnect.
[0151] In high routing density applications, it is desirable to
minimize escape pitch. In order to reduce the pitch between
conductive traces 394 and 396, the bump material is reflowed
without a masking layer around integrated bump pads 398. The escape
pitch between conductive traces 394 and 396 can be reduced by
eliminating the masking layer and associated SROs around the
integrated bump pads for the purpose of reflow containment, i.e.,
by reflowing the bump material without a masking layer. Masking
layer 392 can be formed over a portion of conductive traces 394 and
396 and substrate 400 away from integrated bump pads 398; however,
masking layer 392 is not formed around integrated bump pads 398.
That is, the portion of conductive trace 394 and 396 designed to
mate with the bump material is devoid of any SRO of masking layer
392 that would have been used for bump containment during
reflow.
[0152] In addition, masking patch 402 is formed on substrate 400
interstitially within the array of integrated bump pads 398.
Masking patch 402 is non-wettable material. Masking patch 402 can
be the same material as masking layer 392 and applied during the
same processing step, or a different material during a different
processing step. Masking patch 402 can be formed by selective
oxidation, plating, or other treatment of the portion of the trace
or pad within the array of integrated bump pads 398. Masking patch
402 confines bump material flow to integrated bump pads 398 and
prevents leaching of conductive bump material to adjacent
structures.
[0153] When the bump material is reflowed with masking patch 402
interstitially disposed within the array of integrated bump pads
398, the wetting and surface tension causes the bump material to be
confined and retained within the space between die bump pads 232
and integrated bump pads 398 and portion of substrate 400
immediately adjacent to conductive traces 394 and 396 and
substantially within the footprint of the integrated bump pads
398.
[0154] To achieve the desired confinement property, the bump
material can be immersed in a flux solution prior to placement on
die bump pads 232 or integrated bump pads 398 to selectively render
the region contacted by the bump material more wettable than the
surrounding area of conductive traces 394 and 396. The molten bump
material remains confined substantially within the area defined by
the bump pads due to the wettable properties of the flux solution.
The bump material does not run-out to the less wettable areas. A
thin oxide layer or other insulating layer can be formed over areas
where bump material is not intended to make the area less wettable.
Hence, masking layer 392 is not needed around die bump pads 232 or
integrated bump pads 398.
[0155] Since no SRO is formed around die bump pads 232 or
integrated bump pads 398, conductive traces 394 and 396 can be
formed with a finer pitch, i.e., the conductive traces can be
disposed closer to adjacent structures without making contact and
forming electrical shorts. Assuming the same solder registration
design rule, the pitch between conductive traces 394 and 396 is
given as P=(1.1D+W)/2, where D is the base diameter of bump 404 and
W is the width of conductive traces 394 and 396. In one embodiment,
given a bump diameter of 100 .mu.m and trace line width of 20
.mu.m, the minimum escape pitch of conductive traces 394 and 396 is
65 .mu.m. The bump formation eliminates the need to account for the
ligament spacing of masking material between adjacent openings and
minimum resolvable SRO, as found in the prior art.
[0156] FIG. 27 shows package-on-package (PoP) 405 with
semiconductor die 406 stacked over semiconductor die 408 using die
attach adhesive 410. Semiconductor die 406 and 408 each have an
active surface containing analog or digital circuits implemented as
active devices, passive devices, conductive layers, and dielectric
layers formed within the die and electrically interconnected
according to the electrical design and function of the die. For
example, the circuit may include one or more transistors, diodes,
and other circuit elements formed within the active surface to
implement analog circuits or digital circuits, such as DSP, ASIC,
memory, or other signal processing circuit. Semiconductor die 406
and 408 may also contain IPDs, such as inductors, capacitors, and
resistors, for RF signal processing.
[0157] Semiconductor die 406 is mounted to conductive traces 412
formed on substrate 414 using bump material 416 formed on contact
pads 418, using any of the embodiments from FIGS. 17a-17g, 18a-18d,
19a-19d, 20a-20c, and 21a-21b. Conductive traces 412 are similar to
the escape traces and interconnect sites, as described in FIGS.
6-15, for increasing routing density. Semiconductor die 408 is
electrically connected to contact pads 420 formed on substrate 414
using bond wires 422. The opposite end of bond wire 422 is bonded
to contact pads 424 on semiconductor die 406.
[0158] Masking layer 426 is formed over substrate 414 and opened
beyond the footprint of semiconductor die 406. While masking layer
426 does not confine bump material 416 to conductive traces 412
during reflow, the open mask can operate as a dam to prevent
encapsulant 428 from migrating to contact pads 420 or bond wires
422 during MUF. Encapsulant 428 is deposited between semiconductor
die 408 and substrate 414, similar to FIGS. 22a-22c. Masking layer
426 blocks MUF encapsulant 428 from reaching contact pads 420 and
bond wires 422, which could cause a defect. Masking layer 426
allows a larger semiconductor die to be placed on a given substrate
without risk of encapsulant 428 bleeding onto contact pads 420.
[0159] While one or more embodiments of the present invention have
been illustrated in detail, the skilled artisan will appreciate
that modifications and adaptations to those embodiments may be made
without departing from the scope of the present invention as set
forth in the following claims.
* * * * *