U.S. patent application number 13/429274 was filed with the patent office on 2013-09-26 for sige heterojunction bipolar transistor with a shallow out-diffused p+ emitter region.
The applicant listed for this patent is Jeffrey A. Babcock, Alexei Sadovnikov. Invention is credited to Jeffrey A. Babcock, Alexei Sadovnikov.
Application Number | 20130248935 13/429274 |
Document ID | / |
Family ID | 49034634 |
Filed Date | 2013-09-26 |
United States Patent
Application |
20130248935 |
Kind Code |
A1 |
Babcock; Jeffrey A. ; et
al. |
September 26, 2013 |
SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH A SHALLOW OUT-DIFFUSED
P+ EMITTER REGION
Abstract
A pnp SiGe heterojunction bipolar transistor (HBT) reduces the
rate that p-type dopant atoms in the p+ emitter of the transistor
out diffuse into a lowly-doped region of the base of the transistor
by epitaxially growing the emitter to include a single-crystal
germanium region and an overlying single-crystal silicon
region.
Inventors: |
Babcock; Jeffrey A.;
(Sunnyvale, CA) ; Sadovnikov; Alexei; (Sunnyvale,
CA) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Babcock; Jeffrey A.
Sadovnikov; Alexei |
Sunnyvale
Sunnyvale |
CA
CA |
US
US |
|
|
Family ID: |
49034634 |
Appl. No.: |
13/429274 |
Filed: |
March 23, 2012 |
Current U.S.
Class: |
257/197 ;
257/E21.09; 257/E29.188; 438/478 |
Current CPC
Class: |
H01L 27/0826 20130101;
H01L 29/0817 20130101; H01L 29/66242 20130101; H01L 29/7378
20130101; H01L 21/82285 20130101 |
Class at
Publication: |
257/197 ;
438/478; 257/E29.188; 257/E21.09 |
International
Class: |
H01L 29/737 20060101
H01L029/737; H01L 21/20 20060101 H01L021/20 |
Claims
1. A bipolar structure comprising: a substrate structure having a
first conductivity type; a first epitaxial structure that touches
the substrate structure, the first epitaxial structure including
single-crystal silicon; a second epitaxial structure that touches
the first epitaxial structure, the second epitaxial structure
including a first single-crystal germanium region, the first
single-crystal germanium region having a second conductivity type;
a non-conductive structure that touches the second epitaxial
structure, the non-conductive structure having an emitter opening
that exposes the second epitaxial structure; and a third epitaxial
structure that touches the non-conductive structure and extends
through the emitter opening to touch the second epitaxial
structure, the third epitaxial structure including a second
single-crystal germanium region, the second single-crystal
germanium region having the first conductivity type.
2. The bipolar structure of claim 1 wherein the third epitaxial
structure further includes a first single-crystal silicon region
that touches and lies above the second single-crystal germanium
region.
3. The bipolar structure of claim 2 wherein the first
single-crystal silicon region has the first conductivity type.
4. The bipolar structure of claim 3 wherein the second epitaxial
structure further includes a second single-crystal silicon region
that touches and lies above the first single-crystal germanium
region.
5. The bipolar structure of claim 4 wherein the third epitaxial
structure touches the second single-crystal silicon region.
6. The bipolar structure of claim 5 wherein the second
single-crystal silicon region includes the first conductivity
type.
7. The bipolar structure of claim 1 wherein a single-crystal region
of the third epitaxial structure touches a single-crystal region of
the second epitaxial structure.
8. The bipolar structure of claim 1 wherein the second epitaxial
structure further includes a first single-crystal silicon region
that touches and lies above the first single-crystal germanium
region.
9. The bipolar structure of claim 8 wherein the first
single-crystal silicon region includes the first conductivity
type.
10. The bipolar structure of claim 9 wherein the third epitaxial
structure touches the first single-crystal silicon region.
11. The bipolar structure of claim 10 wherein the third epitaxial
structure further includes a second single-crystal silicon region
that touches and lies above the second single-crystal germanium
region.
12. The bipolar structure of claim 11 wherein the second
single-crystal silicon region has the first conductivity type.
13. A method of forming a bipolar structure comprising forming an
upper single-crystal region to touch a lower single-crystal region,
the upper single-crystal region including an upper single-crystal
germanium region of a first conductivity type, the lower
single-crystal region including a lower single-crystal germanium
region of a second conductivity type.
14. The method of claim 13 and further comprising forming a first
single-crystal silicon region to touch and lie over the upper
single-crystal region.
15. The method of claim 14 wherein first single-crystal silicon
region has the first conductivity type.
16. The method of claim 14 wherein the lower single-crystal region
further includes a second single-crystal silicon region that
touches and lies above the lower single-crystal germanium
region.
17. The method of claim 16 wherein forming the upper single-crystal
region includes: epitaxially growing a germanium layer; and
selectively removing the germanium layer to form a structure that
includes the upper single-crystal germanium region.
18. The method of claim 17 wherein forming the first single-crystal
silicon region includes: epitaxially growing a silicon layer on the
structure; and selectively removing the silicon layer to form a
structure that includes the first single-crystal silicon
region.
19. The method of claim 18 and further comprising doping the first
single-crystal silicon region to have the first conductivity
type.
20. The method of claim 19 and further comprising annealing to out
diffuse dopants from the first single-crystal silicon region into
the second single-crystal silicon region.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a SiGe heterojunction
bipolar transistor (HBT) and, more particularly, to a SiGe HBT with
a shallow out-diffused p+ emitter region.
[0003] 2. Description of the Related Art
[0004] A bipolar transistor is a well-known structure that has an
emitter, a base connected to the emitter, and a collector connected
to the base. The emitter has a first conductivity type, the base
has a second conductivity type, and the collector has the first
conductivity type. For example, an npn bipolar transistor has an
n-type emitter, a p-type base, and an n-type collector, while a pnp
bipolar transistor has a p-type emitter, an n-type base, and a
p-type collector.
[0005] When the emitter and base are formed from different
semiconductor materials, such as silicon and germanium,
respectively, the interface is known as a heterojunction. The
heterojunction limits the number of holes that can be injected into
the emitter from the base. Limiting the number of injected holes
allows the dopant concentration of the base to be increased which,
in turn, reduces the base resistance and increases the maximum
frequency of the transistor.
[0006] FIG. 1 shows a cross-sectional view that illustrates an
example of a prior-art SiGe heterojunction bipolar structure 100.
As shown in FIG. 1, bipolar structure 100 includes a
silicon-on-oxide (SOI) wafer 110, which has a silicon handle wafer
112, a buried insulation layer 114 that touches silicon handle
wafer 112, and a single-crystal silicon substrate 116 that touches
buried insulation layer 114. Silicon substrate 116, in turn, has a
heavily-doped, p conductivity type (p+) buried region 120 and a
heavily-doped, n conductivity type (n+) buried region 122.
[0007] As further shown in FIG. 1, bipolar structure 100 includes a
single-crystal silicon epitaxial structure 130 that touches the top
surface of silicon substrate 116. Epitaxial structure 130 has a
very low dopant concentration, except for regions of out diffusion.
For example, a number of p-type atoms out diffuse from p+ buried
layer 120 into epitaxial structure 130, and a number of n-type
atoms out diffuse from n+ buried layer 122 into epitaxial structure
130. In the present example, epitaxial structure 130 is a very
lightly doped, n conductivity type (n---) region, excluding the
regions of out diffusion.
[0008] Bipolar structure 100 also includes a number of shallow
trench isolation structures 132 that touch epitaxial structure 130,
and a deep trench isolation structure 134 that touches and extends
through epitaxial structure 130 as well as silicon substrate 116 to
touch buried insulation layer 114. Buried insulation layer 114 and
deep trench isolation structure 132 form an electrically-isolated,
single-crystal silicon region 136 and a laterally-adjacent,
electrically-isolated, single-crystal silicon region 138. In
addition, bipolar structure 100 includes a lightly-doped, p
conductivity type (p-) region 140 that extends from the top surface
of silicon epitaxial structure 130 down through epitaxial structure
130 to touch p+ buried region 120, and a lightly-doped, n
conductivity type (n-) region 142 that extends from the top surface
of silicon epitaxial structure 130 down through epitaxial structure
130 to touch n+ buried region 122.
[0009] Bipolar structure 100 also includes a p conductivity type
sinker region 144 that extends from the top surface of silicon
epitaxial structure 130 down through epitaxial structure 130 to p+
buried region 120, and an n conductivity type sinker region 146
that extends from the top surface of silicon epitaxial structure
130 down through epitaxial structure 130 to n+ buried region
122.
[0010] Sinker region 144 includes a heavily-doped, p conductivity
type (p+) surface region and a moderately-doped, p conductivity
type (p) lower region, while sinker region 146 includes a
heavily-doped, n conductivity type (n+) surface region and a
moderately-doped, n conductivity type (n) lower region.
[0011] Further, bipolar structure 100 includes a SiGe epitaxial
structure 150 that touches and lies over silicon epitaxial
structure 130, a shallow trench isolation structure 132, and p-
region 140. SiGe epitaxial structure 150 has a number of layers
including a top layer 151 and a lower layer 152 that touches and
lies below top layer 151.
[0012] Top layer 151 includes a single-crystal silicon region and a
polycrystalline silicon region. Top layer 151 also has an
out-diffused emitter region 153, and an outer region 154 that
touches out-diffused emitter region 153. Out-diffused emitter
region 153, which lies in the single-crystal silicon region, has a
heavy dopant concentration and a p conductivity type (p+).
[0013] Outer region 154, which horizontally surrounds out-diffused
emitter region 153, has a very low dopant concentration and, in the
present example, an n conductivity type (n---). Lower layer 152, in
turn, includes a single-crystal germanium region that touches the
single-crystal silicon region of top layer 151, and a
polycrystalline germanium region that touches the polycrystalline
silicon region of top layer 151. Lower layer 152 also has a heavy
dopant concentration and an n conductivity type (n+). Thus, the
single-crystal germanium region has an n+ dopant concentration.
[0014] Bipolar structure additionally includes a SiGe epitaxial
structure 155 that touches and lies over silicon epitaxial
structure 130, a shallow trench isolation structure 132, and n-
region 142. SiGe epitaxial structure 155 has a number of layers
including a top layer 156 and a lower layer 157 that touches and
lies below top layer 156.
[0015] Top layer 156 includes a single-crystal silicon region and a
polycrystalline silicon region. Top layer 156 also has an
out-diffused emitter region 158, and an outer region 159 that
touches out-diffused emitter region 158. Out-diffused emitter
region 158, which lies in the single-crystal silicon region of top
layer 156, has a heavy dopant concentration and an n conductivity
type (n+).
[0016] Outer region 159, which horizontally surrounds out-diffused
emitter region 158, has a very low dopant concentration and, in the
present example, an n conductivity type (n---). Lower layer 157, in
turn, includes a single-crystal germanium region that touches the
single-crystal silicon region of top layer 156, and a
polycrystalline germanium region that touches the polycrystalline
silicon region of top layer 156. Lower layer 157 also has a heavy
dopant concentration and a p conductivity type (p+).
[0017] Bipolar structure 100 additionally includes an isolation
structure 160 that touches SiGe epitaxial structure 150, and an
isolation structure 162 that touches SiGe epitaxial structure 155.
Isolation structures 160 and 162 are electrically non-conductive.
Isolation structure 160 has an emitter opening 164 that exposes the
single-crystal silicon region of top layer 151 of SiGe epitaxial
structure 150, and a contact opening 166 that exposes the
polycrystalline silicon region of top layer 151 of SiGe epitaxial
structure 150. Similarly, isolation structure 162 has an emitter
opening 170 that exposes the single-crystal silicon region of top
layer 156 of SiGe epitaxial structure 155, and a contact opening
172 that exposes the polycrystalline silicon region of top layer
156 of SiGe epitaxial structure 155.
[0018] Bipolar structure 100 further includes a heavily-doped, p
conductivity type (p+) polysilicon structure 180 that touches
isolation structure 160 and extends through emitter opening 164 to
touch the p+ out-diffused emitter region 153 of SiGe epitaxial
structure 150. Bipolar structure 100 also includes a heavily-doped,
n conductivity type (n+) polysilicon structure 182 that touches
isolation structure 162 and extends through emitter opening 170 to
touch the n+ out-diffused emitter region 158 of SiGe epitaxial
structure 155.
[0019] P+ polysilicon structure 180 and p+ out-diffused emitter
region 153 form the emitter, the remaining portion of SiGe
epitaxial structure 150 forms the n-type base, and the combination
of p+ buried region 120, p- region 140, and p-type sinker region
144 form the collector of a pnp SiGe heterojunction bipolar
transistor (HBT) 190.
[0020] In addition, n+ polysilicon structure 182 and n+
out-diffused emitter region 158 form the emitter, the remaining
p-type portion of SiGe epitaxial structure 155 forms the p-type
base, and the combination of n+ buried region 122, n- region 142,
and n-type sinker region 146 form the collector of an npn SiGe HBT
192.
[0021] During an anneal in the fabrication of HBT 190 and HBT 192,
p-type atoms in p+ polysilicon structure 180 out diffuse into top
layer 151 of SiGe epitaxial structure 150 to form p+ emitter region
153, and n-type atoms in n+ polysilicon structure 182 out diffuse
into top layer 156 of SiGe epitaxial structure 155 to form n+
emitter region 158.
[0022] One of the drawbacks of HBT 190 and HBT 192 is that p+
out-diffused emitter region 153 is significantly larger and deeper
than n+ out-diffused emitter region 158 due to the higher diffusion
rate of p-type atoms, such as boron, when compared to the lower
diffusion rate of n-type atoms, such as phosphorous.
[0023] In applications where the pnp and npn parameters are to be
matched as closely as possible, the significantly deeper depth of
p+ out-diffused emitter region 153 when compared to the depth of n+
out-diffused emitter region 158 poses a problem. One approach to
reducing the variation in the depths is to form a thin oxide layer
on the portion of the single-crystal silicon region of top layer
151 of SiGe epitaxial structure 150 that is exposed by emitter
opening 164.
[0024] FIG. 2 shows a cross-sectional view that illustrates an
example of a prior-art SiGe heterojunction bipolar structure 200.
SiGe heterojunction bipolar structure 200 is similar to SiGe
heterojunction bipolar structure 100 and, as a result, utilizes the
same reference numerals to designate the elements that are common
to both structures.
[0025] As shown in FIG. 2, SiGe heterojunction bipolar structure
200 differs from SiGe heterojunction bipolar structure 100 in that
SiGe heterojunction bipolar structure 200 utilizes a p+
out-diffused emitter region 210 in lieu of p+ out-diffused emitter
region 153. P+ out-diffused emitter region 210 is similar to p+
out-diffused emitter region 153, except that p+ out-diffused
emitter region 210 is smaller and shallower than p+ out-diffused
emitter region 153.
[0026] SiGe heterojunction bipolar structure 200 also differs from
SiGe heterojunction bipolar structure 100 in that SiGe
heterojunction bipolar structure 200 includes an oxide layer 212
that lies between and touches p+ out-diffused emitter region 210 of
SiGe epitaxial structure 150 and p+ polysilicon structure 180.
[0027] P+ polysilicon structure 180 and p+ out-diffused emitter
region 210 form the emitter, the remaining portion of SiGe
epitaxial structure 150 forms the n-type base, and the combination
of p+ buried region 120, p- region 140, and p-type sinker region
144 form the collector of a pnp SiGe heterojunction bipolar
transistor (HBT) 214.
[0028] During the anneal that causes the atoms to out diffuse,
oxide layer 212 is thin enough to allow p-type atoms to diffuse
through from p+ polysilicon structure 180 into the top layer 151 of
SiGe epitaxial structure 150 to form p+ emitter region 210, but
thick enough to slow down the rate at which the atoms diffuse into
the top layer 151 of SiGe epitaxial structure 150. As a result, the
depth of p+ out-diffused emitter region 210 can be formed to be
approximately the same as the depth of n+ out-diffused emitter
region 158.
[0029] One of the drawbacks of SiGe heterojunction bipolar
structure 200 is that SiGe heterojunction bipolar structure 200 has
a significantly larger 1/f noise than SiGe heterojunction bipolar
structure 100 due to the presence of oxide layer 212. In addition,
next generation HBTs commonly use epitaxially-grown single-crystal
silicon structures to form the emitters in lieu of polysilicon
structures like polysilicon structure 180. However, an oxide layer
like oxide layer 212 cannot be used with epitaxially-grown
single-crystal silicon emitters to reduce the depth of the p+
out-diffused emitter region because single-crystal silicon cannot
be epitaxially grown on oxide.
[0030] Thus, there is a need for a SiGe HBT with a shallow p+
out-diffused emitter region which is approximately equal to the
depth of the n+ out-diffused emitter region.
BRIEF DESCRIPTION OF THE DRAWINGS
[0031] FIG. 1 is a cross-sectional view illustrating an example of
a prior-art SiGe heterojunction bipolar structure 100.
[0032] FIG. 2 is a cross-sectional view illustrating an example of
a prior-art SiGe heterojunction bipolar structure 200.
[0033] FIG. 3 is a cross-sectional view illustrating an example of
a SiGe heterojunction bipolar structure 300 in accordance with the
present invention.
[0034] FIGS. 4A-4G are cross-sectional views illustrating a method
400 of forming a SiGe heterojunction bipolar structure in
accordance with the present invention.
DETAILED DESCRIPTION OF THE INVENTION
[0035] FIG. 3 shows a cross-sectional view that illustrates an
example of a SiGe heterojunction bipolar structure 300 in
accordance with the present invention. SiGe heterojunction bipolar
structure 300 is similar to SiGe heterojunction bipolar structure
100 and, as a result, utilizes the same reference numerals to
designate the elements that are common to both structures.
[0036] As shown in FIG. 3, SiGe heterojunction bipolar structure
300 differs from SiGe heterojunction bipolar structure 100 in that
SiGe heterojunction bipolar structure 300 utilizes a p+
out-diffused emitter region 310 in lieu of p+ out-diffused emitter
region 153. P+ out-diffused emitter region 310 is similar to p+
out-diffused emitter region 153, except that p+ out-diffused
emitter region 310 is smaller and shallower than p+ out-diffused
emitter region 153. Thus, outer region 154 touches and horizontally
surrounds a smaller p+ out-diffused emitter region 310.
[0037] SiGe heterojunction bipolar structure 300 also differs from
SiGe heterojunction bipolar structure 100 in that SiGe
heterojunction bipolar structure 300 utilizes an n+ out-diffused
emitter region 312 in lieu of n+ out-diffused emitter region 158.
N+ out-diffused emitter region 312 is similar to n+ out-diffused
emitter region 158. Thus, outer region 159 touches and horizontally
surrounds n+ out-diffused emitter region 312. P+ out-diffused
emitter region 310 has a depth that is approximately the same as
the depth of n+ out-diffused emitter region 312.
[0038] In addition, SiGe heterojunction bipolar structure 300
differs from SiGe heterojunction bipolar structure 100 in that SiGe
heterojunction bipolar structure 300 replaces p+ polysilicon
structure 180 with a p+ epitaxial structure 314. P+ epitaxial
structure 314, in turn, has a number of layers including a bottom
layer 316 and an upper layer 318 that touches and lies above bottom
layer 316.
[0039] Bottom layer 316, which lies over isolation structure 160,
includes a single-crystal region that touches the single-crystal p+
out-diffused emitter region 310. In addition, bottom layer 316
includes a single-crystal germanium region and a polycrystalline
germanium region. Bottom layer 316 also has a heavy dopant
concentration and a p conductivity type (p+). Thus, the
single-crystal germanium region has a p+ dopant concentration.
[0040] Upper layer 318, in turn, includes a single-crystal silicon
region that touches and lies over the single-crystal germanium
region of bottom layer 316, and a polycrystalline silicon region
that touches and lies over the polycrystalline germanium region of
bottom layer 316. Further, upper layer 318 has a heavy dopant
concentration and a p conductivity type (p+). Thus, the
single-crystal silicon region has a p+ dopant concentration.
[0041] SiGe heterojunction bipolar structure 300 also differs from
SiGe heterojunction bipolar structure 100 in that SiGe
heterojunction bipolar structure 300 replaces n+ polysilicon
structure 182 with an n+ epitaxial structure 320. N+ epitaxial
structure 320, in turn, includes a single-crystal silicon region
and a polycrystalline silicon region. The single-crystal silicon
region of n+ epitaxial structure 320 touches the single-crystal n+
out-diffused emitter region 312 of SiGe epitaxial structure
155.
[0042] Thus, p+ epitaxial structure 314 and p+ out-diffused emitter
region 310 form the emitter, the remaining portion of SiGe
epitaxial structure 150 forms the n-type base, and the combination
of p+ buried region 120, p- region 140, and p-type sinker region
144 form the collector of a pnp SiGe heterojunction bipolar
transistor (HBT) 322.
[0043] Further, n+ epitaxial structure 320 and n+ out-diffused
emitter region 312 form the emitter, the remaining p-type portion
of SiGe epitaxial structure 155 forms the p-type base, and the
combination of n+ buried region 122, n- region 142, and n-type
sinker region 146 form the collector of a npn SiGe heterojunction
bipolar transistor (HBT) 324.
[0044] In operation, during the anneal that causes the p-type atoms
to out diffuse, the germanium in bottom layer 316 is thin enough to
allow p-type atoms to diffuse from upper layer 318 into the top
layer 151 of SiGe epitaxial structure 150 to form p+ out-diffused
emitter region 310, but thick enough to slow down the rate at which
the atoms diffuse into the top layer 151 of SiGe epitaxial
structure 150. As a result, the depth of p+ out-diffused emitter
region 310 can be formed to be approximately the same as the depth
of n+ out-diffused emitter region 312.
[0045] FIGS. 4A-4G show cross-sectional views that illustrate a
method 400 of forming a SiGe heterojunction bipolar structure in
accordance with the present invention. As shown in FIG. 4A, the
method utilizes a conventionally-formed intermediate structure 408
that includes a silicon-on-oxide (SOI) wafer 410, which has a
silicon handle wafer 412, a buried insulation layer 414 that
touches silicon handle wafer 412, and a single-crystal silicon
substrate 416 that touches buried insulation layer 414. Silicon
substrate 416, in turn, has a p+ buried region 420 and an n+ buried
region 422.
[0046] In addition, base structure 408 includes a single-crystal
silicon epitaxial structure 430 that touches the top surface of
silicon substrate 416. In the present example, epitaxial structure
430 has a very low dopant concentration and an n conductivity type
(n---), except for regions of out diffusion. For example, a number
of p-type atoms out diffuse from p+ buried layer 420 into epitaxial
structure 430, and a number of n-type atoms out diffuse from n+
buried layer 422 into epitaxial structure 430. As a result,
substantially all of epitaxial structure 430 has a very low dopant
concentration.
[0047] Intermediate structure 408 also includes a number of shallow
trench isolation structures 432 that touch epitaxial structure 430,
and a deep trench isolation structure 434 that touches and extends
through epitaxial structure 430 as well as silicon substrate 416 to
touch buried insulation layer 414. Deep trench isolation structure
434 forms an electrically-isolated, single-crystal silicon region
436, and a laterally-adjacent, electrically-isolated,
single-crystal silicon region 438.
[0048] In addition, intermediate structure 408 includes a
lightly-doped, p conductivity type (p-) region 440 that extends
from the top surface of silicon epitaxial structure 430 down
through epitaxial structure 430 to touch p+ buried region 420, and
a lightly-doped, n conductivity type (n-) region 442 that extends
from the top surface of silicon epitaxial structure 430 down
through epitaxial structure 430 to touch n+ buried region 422.
[0049] Intermediate structure 408 also includes a p conductivity
type sinker region 444 that extends from the top surface of silicon
epitaxial structure 430 down through epitaxial structure 430 to p+
buried region 420, and an n conductivity type sinker region 446
that extends from the top surface of silicon epitaxial structure
430 down through epitaxial structure 430 to n+ buried region
422.
[0050] Sinker region 444 includes a heavily-doped, p conductivity
type (p+) surface region and a moderately-doped, p conductivity
type (p) lower region, while sinker region 446 includes a
heavily-doped, n conductivity type (n+) surface region and a
moderately-doped, n conductivity type (n) lower region.
[0051] Further, intermediate structure 408 includes a SiGe
epitaxial structure 450 that touches and lies over silicon
epitaxial structure 430, a shallow trench isolation structure 432,
and p-region 440. Intermediate structure 408 also includes a SiGe
epitaxial structure 452 that touches and lies over silicon
epitaxial structure 430, a shallow trench isolation structure 432,
and n- region 442.
[0052] SiGe epitaxial structure 450 has a number of layers
including a top layer 454 and a lower layer 455 that touches and
lies below top layer 454. Top layer 454 includes a single-crystal
silicon region and a polycrystalline silicon region. In addition,
top layer 454 has a very low dopant concentration and, in the
present example, an n conductivity type (n---).
[0053] Lower layer 455, in turn, includes a single-crystal
germanium region that touches the single-crystal silicon region of
top layer 454, and a polycrystalline germanium region that touches
the polycrystalline silicon region of top layer 454. Lower layer
455 also has a heavy dopant concentration and an n conductivity
type (n+).
[0054] Similarly, SiGe epitaxial structure 452 has a number of
layers including a top layer 456 and a lower layer 457 that touches
and lies below top layer 456. Top layer 456 includes a
single-crystal silicon region and a polycrystalline silicon region.
In addition, top layer 456 has a very low dopant concentration and,
in the present example, an n conductivity type (n---).
[0055] Lower layer 457, in turn, includes a single-crystal
germanium region that touches the single-crystal silicon region of
top layer 456, and a polycrystalline germanium region that touches
the polycrystalline silicon region of top layer 456. Lower layer
457 also has a heavy dopant concentration and a p conductivity type
(p+).
[0056] Intermediate structure 408 additionally includes an
isolation structure 460 that touches SiGe epitaxial structure 450,
and an isolation structure 462 that touches SiGe epitaxial
structure 452. The isolation structures 460 and 462 are
electrically non-conductive. Isolation structure 460 has an emitter
opening 464 that exposes the single-crystal silicon region of top
layer 454 of SiGe epitaxial structure 450, and a contact opening
466 that exposes the polycrystalline silicon region of top layer
454 of SiGe epitaxial structure 450. Similarly, isolation structure
462 has an emitter opening 470 that exposes the single-crystal
silicon region of top layer 456 of SiGe epitaxial structure 452,
and a contact opening 472 that exposes the polycrystalline silicon
region of top layer 456 of SiGe epitaxial structure 452.
[0057] As further shown in FIG. 4A, method 400 begins by
epitaxially growing a lower layer 474 in a conventional manner on
the exposed single-crystal silicon regions and the polycrystalline
silicon regions of the SiGe epitaxial structures 450 and 452. Lower
layer 474 is also grown on p sinker region 444 and n sinker region
446. Lower layer 474 is further grown on the isolation structures
460 and 462 as well as on the shallow trench isolation structures
432 and deep trench isolation structure 434.
[0058] Lower layer 474 has a single-crystal region that touches and
lies over the single-crystal silicon region of top layer 454 of
SiGe epitaxial structure 450, and a single-crystal region that
touches and lies over the single-crystal silicon region of top
layer 456. Lower layer 474 also has a single-crystal region that
touches and lies over single-crystal p sinker region 444, and a
single-crystal region that touches and lies over the single-crystal
n sinker region. Lower layer 474 has a polycrystalline region that
touches and lies over the isolation structures 432, 434, 460 and
462.
[0059] In addition, lower layer 474 includes a single-crystal
germanium region and a polycrystalline germanium region, and can
optionally include single-crystal silicon and polycrystalline
silicon that lie below and/or above the germanium. After lower
layer 474 has been grown, a patterned photoresist layer 476 is
formed on lower layer 474 in a conventional manner.
[0060] Following the formation of patterned photoresist layer 476,
as shown in FIG. 4B, the exposed regions of lower layer 474 are
etched to form a lower structure 480. Lower structure 480 touches
the single-crystal silicon region of top layer 454 of SiGe
epitaxial structure 450 which is exposed by emitter opening 470,
and the top surface of isolation structure 460. As a result, lower
structure 480 has a single-crystal region that touches and lies
over top layer 454 of SiGe epitaxial structure 450, and a
polycrystalline structure that touches and lies over isolation
structure 460. After lower structure 480 has been formed, patterned
photoresist layer 476 is removed in a conventional manner.
[0061] As shown in FIG. 4C, after patterned photoresist layer 476
has been removed, an upper layer 482 is epitaxially grown in a
conventional manner on lower structure 480 and the single-crystal
silicon region of top layer 456 of SiGe epitaxial structure 452.
Upper layer 482 is also grown on the polycrystalline silicon
regions of the SiGe epitaxial structures 450 and 452. In addition,
upper layer 482 is grown on p sinker region 444 and n sinker region
446. Upper layer 482 is further grown on the isolation structures
460 and 462 as well as on the shallow trench isolation structures
432 and deep trench isolation structure 434.
[0062] Upper layer 482 has a single-crystal region that touches and
lies over lower structure 480, and a single-crystal region that
touches and lies over the single-crystal silicon region of top
layer 456 of SiGe epitaxial structure 452 exposed by emitter
opening 470.
[0063] Further, upper layer 482 has a single-crystal region that
touches and lies over the single-crystal p sinker region 444, and a
single-crystal region that touches and lies over the single-crystal
n sinker region 446. Upper layer 482 has a polycrystalline region
that touches and lies over the isolation structures 432, 434, 460
and 462. In addition, upper layer 482 includes silicon. After upper
layer 482 has been grown, a patterned photoresist layer 484 is
formed on upper layer 482 in a conventional manner.
[0064] Following the formation of patterned photoresist layer 484,
as shown in FIG. 4D, the exposed regions of upper layer 482 are
etched to form a first upper structure 486 that touches lower
structure 480, and a second upper structure 488 that touches the
single-crystal silicon region of top layer 456 of SiGe epitaxial
structures 452 which is exposed by emitter opening 470. After the
upper structures 486 and 488 have been formed, patterned
photoresist layer 484 is removed in a conventional manner.
[0065] As shown in FIG. 4E, after patterned photoresist layer 484
has been removed, a patterned photoresist layer 490 is formed in a
conventional manner. Following the formation of patterned
photoresist layer 490, a p-type dopant, such as boron, is implanted
through patterned photoresist layer 490 to heavily dope (p+) upper
structure 486. After upper structure 486 has been doped, patterned
photoresist layer 490 is removed in a conventional manner.
[0066] As shown in FIG. 4F, after patterned photoresist layer 490
has been removed, a patterned photoresist layer 492 is formed in a
conventional manner. Following the formation of patterned
photoresist layer 492, an n-type dopant, such as phosphorous, is
implanted through patterned photoresist layer 492 to heavily dope
(n+) upper structure 488. After upper structure 488 has been doped,
patterned photoresist layer 492 is removed in a conventional
manner.
[0067] As shown in FIG. 4G, after patterned photoresist layer 492
has been removed, the doped structure is annealed in a conventional
manner. During the anneal, the germanium in lower structure 480 is
thin enough to allow p-type atoms to out diffuse from upper
structure 486 into SiGe epitaxial structure 450 to form a p+
out-diffused emitter region 494, but thick enough to slow down the
rate at which the atoms out diffuse into SiGe epitaxial structure
450.
[0068] At the same time, n-type atoms out diffuse from upper
structure 488 into SiGe epitaxial structure 452 to form an n+
out-diffused emitter region 496. Thus, as a result of the slowing
effect provided by the germanium, the depth of p+ out-diffused
emitter region 494 can be formed to be approximately the same as
the depth of n+ out-diffused emitter region 496. Method 400 then
continues with conventional steps.
[0069] It should be understood that the above descriptions are
examples of the present invention, and that various alternatives of
the invention described herein may be employed in practicing the
invention. Thus, it is intended that the following claims define
the scope of the invention and that structures and methods within
the scope of these claims and their equivalents be covered
thereby.
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