U.S. patent application number 13/716844 was filed with the patent office on 2013-05-23 for method for stacking devices and structure thereof.
This patent application is currently assigned to Taiwan Semiconductor Manufacturing Company, Ltd.. The applicant listed for this patent is Taiwan Semiconductor Manufacturing Company, Ltd.. Invention is credited to Clinton Chao, Tjandra Winata Karta, Chien-Hsiun Lee, Mirng-Ji Lii, Dean Wang.
Application Number | 20130127049 13/716844 |
Document ID | / |
Family ID | 41446411 |
Filed Date | 2013-05-23 |
United States Patent
Application |
20130127049 |
Kind Code |
A1 |
Wang; Dean ; et al. |
May 23, 2013 |
Method for Stacking Devices and Structure Thereof
Abstract
A semiconductor device that has a first device that includes a
first through-silicon via (TSV) structure, a first coating material
disposed over the first device, the first coating material
continuously extending over the first device and covering the first
TSV structure, a second device disposed over the first device and
within the first coating material, the second device includes a
second TSV structure and a plurality of conductive bumps, the
plurality of conductive bumps are positioned within the first
coating material, a second coating material disposed over the
second device, the second coating material continuously extends
over the second device and covers the second TSV structure, and a
third device disposed over the second coating material, the third
device includes a third TSV structure.
Inventors: |
Wang; Dean; (Tainan, TW)
; Lee; Chien-Hsiun; (Hsinchu, TW) ; Chao;
Clinton; (Hsinchu, TW) ; Lii; Mirng-Ji; (Sinpu
Township, TW) ; Karta; Tjandra Winata; (Chu-Pei,
TW) |
|
Applicant: |
Name |
City |
State |
Country |
Type |
Manufacturing Company, Ltd.; Taiwan Semiconductor |
Hsin-Chu |
|
TW |
|
|
Assignee: |
Taiwan Semiconductor Manufacturing
Company, Ltd.
Hsin-Chu
TW
|
Family ID: |
41446411 |
Appl. No.: |
13/716844 |
Filed: |
December 17, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
12163464 |
Jun 27, 2008 |
8334170 |
|
|
13716844 |
|
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|
Current U.S.
Class: |
257/737 |
Current CPC
Class: |
H01L 2924/0665 20130101;
H01L 2224/73104 20130101; H01L 2924/01006 20130101; H01L 2224/131
20130101; H01L 2224/83986 20130101; H01L 2924/0133 20130101; H01L
2924/1461 20130101; H01L 2224/8121 20130101; H01L 2224/8321
20130101; H01L 2924/01005 20130101; H01L 2924/01082 20130101; H01L
2924/3512 20130101; H01L 2924/01073 20130101; H01L 2924/0133
20130101; H01L 2224/27416 20130101; H01L 2224/73204 20130101; H01L
2224/2919 20130101; H01L 2224/83856 20130101; H01L 2224/2919
20130101; H01L 2225/06513 20130101; H01L 2924/01074 20130101; H01L
2224/27436 20130101; H01L 24/95 20130101; H01L 2224/9211 20130101;
H01L 2924/01013 20130101; H01L 2924/01032 20130101; H01L 2924/13091
20130101; H01L 2225/06517 20130101; H01L 2224/95 20130101; H01L
2224/83862 20130101; H01L 2225/06527 20130101; H01L 2224/16145
20130101; H01L 25/50 20130101; H01L 23/481 20130101; H01L 2924/0665
20130101; H01L 24/81 20130101; H01L 24/75 20130101; H01L 2924/1306
20130101; H01L 2924/01079 20130101; H01L 2924/3512 20130101; H01L
2224/131 20130101; H01L 2224/32145 20130101; H01L 2224/94 20130101;
H01L 2924/01014 20130101; H01L 23/49811 20130101; H01L 2924/00
20130101; H01L 2924/01029 20130101; H01L 2924/00014 20130101; H01L
2924/01014 20130101; H01L 2924/00 20130101; H01L 2224/32145
20130101; H01L 2924/00 20130101; H01L 2924/00 20130101; H01L
2924/00 20130101; H01L 2924/01013 20130101; H01L 24/27 20130101;
H01L 2224/16145 20130101; H01L 2924/01033 20130101; H01L 2224/73204
20130101; H01L 2924/014 20130101; H01L 2924/1306 20130101; H01L
2924/181 20130101; H01L 24/33 20130101; H01L 2924/181 20130101;
H01L 24/83 20130101; H01L 2224/9221 20130101; H01L 2225/06589
20130101; H01L 2924/01029 20130101; H01L 25/0657 20130101; H01L
2224/75744 20130101; H01L 2224/81815 20130101; H01L 2924/1461
20130101; H01L 24/29 20130101; H01L 2225/06541 20130101; H01L
2224/27848 20130101; H01L 2224/2919 20130101; H01L 2224/9205
20130101; H01L 2924/00 20130101; H01L 2924/0665 20130101 |
Class at
Publication: |
257/737 |
International
Class: |
H01L 23/498 20060101
H01L023/498 |
Claims
1. A semiconductor device comprising: a first device including a
first plurality of conductive bumps; a second device including a
second plurality of conductive bumps, the second device overlying
the first device and electrically coupled to the first device; a
third device including a third plurality of conductive bumps, the
third device overlying the second device and electrically coupled
to the second device; a first coating material disposed between the
first and second devices, wherein the first coating material
continuously covers a surface area between and surrounding the
second plurality of conductive bumps, and wherein a wall of the
first coating material is in direct contact with a wall of the
second plurality of conductive bumps; and a second coating material
disposed between the second and third devices, wherein the second
coating material continuously covers a surface area between and
surrounding the third plurality of conductive bumps, and wherein a
wall of the second coating material is in direct contact with a
wall of the third plurality of conductive bumps.
2. The semiconductor device of claim 1, wherein the first and
second coating materials are configured with substantially similar
defect characteristics.
3. The semiconductor device of claim 1, wherein the first, second,
and third devices are each dies.
4. The semiconductor device of claim 3, further comprising a fourth
device including a fourth plurality of conductive bumps, the fourth
device overlying the third device and electrically coupled to third
device, the fourth device being a die; and a third coating material
disposed between the third and fourth devices, the third coating
material being configured with substantially similar defect
characteristics as that of the first and second coating materials,
wherein the third coating material continuously covers a surface
area between and surrounding the fourth plurality of conductive
bumps, and wherein a wall of the third coating material is in
direct contact with a wall of the fourth plurality of conductive
bumps.
5. The semiconductor device of claim 1, wherein the first, second,
and third devices each include a plurality of through silicon via
(TSV) structures.
6. The semiconductor device of claim 5, wherein one of the TSV
structures of the first device is electrically coupled to one of
the TSV structures of the second device, and wherein one of the TSV
structures of the second device is electrically coupled to one of
the TSV structures of the third device.
7. The semiconductor device of claim 1, wherein the second and
third plurality of conductive bumps connect the first, second, and
third devices.
8. The semiconductor device of claim 1, further comprising: a
carrier substrate; and wherein the first device overlies the
carrier substrate and is secured to the carrier substrate.
9. A semiconductor device comprising: a first device having a first
through-silicon via (TSV) structure; a first coating material
disposed over the first device, wherein the first coating material
continuously extends over the first device and covers the first TSV
structure; a second device disposed over the first device and
within the first coating material, wherein the second device
includes a second TSV structure and a plurality of conductive
bumps, wherein the plurality of conductive bumps are positioned
within the first coating material; a second coating material
disposed over the second device, wherein the second coating
material continuously extends over the second device and covers the
second TSV structure; and a third device disposed over the second
coating material, wherein the third device includes a third TSV
structure.
10. The semiconductor device of claim 9, wherein the first coating
material includes a polymer component and a flux component.
11. The semiconductor device of claim 9, wherein the first coating
material and the second coating material are substantially
similar.
12. The semiconductor device of claim 9, wherein at least one of
the conductive bumps from the plurality of conductive bumps
contacts the first TSV structure.
13. The semiconductor device of claim 9, wherein the first, second,
and third devices each include a circuit; and wherein the circuits
of the first, second, and third devices are electrically coupled
using the first and second TSV structures.
14. The semiconductor device of claim 9, wherein the first, second,
and third devices are chips.
15. A semiconductor device comprising: a first device having a
first through-silicon via (TSV) structure; a first coating material
disposed over the first device, the first coating material
extending over the first device and covering the first TSV
structure; a second device disposed on the first coating material,
the second device having a second TSV structure and a plurality of
conductive bumps, wherein the plurality of conductive bumps are
disposed within the first coating material; a second coating
material disposed over the second device, the second coating
material extending over the second device and covering the second
TSV structure; and a third device disposed on the second coating
material.
16. The semiconductor device of claim 15, wherein the first TSV
structure is exposed on a side of the first device.
17. The semiconductor device of claim 15, wherein the second device
further includes a bonding pad, wherein the bonding pad is
electrically coupled to the second TSV structure.
18. The semiconductor device of claim 15, wherein the first coating
material includes a B-stage polymer.
19. The semiconductor device of claim 15, wherein the first coating
material continuously extends over the first device and the second
coating material continuously extends over the second device.
20. The semiconductor device of claim 15, wherein the first,
second, and third devices are one of a circuit and a die, and
wherein the first, second, and third devices are electrically
coupled together.
Description
PRIORITY DATA
[0001] The present application is a divisional application of U.S.
patent application Ser. No. 12/163,464, filed Jun. 27, 2008, which
is incorporated herein by reference in its entirety.
BACKGROUND
[0002] The present disclosure relates generally to semiconductor
manufacturing and, more particularly, to a method for fabricating a
stacked semiconductor device.
[0003] Vias have been routinely used in semiconductor fabrication
to provide electrical coupling between one or more layers of
conductive material within a semiconductor device. More recently,
through-silicon vias (TSV) have arisen as a method of overcoming
limitations of conventional wire bonding for example, as
performance and density requirements increase no longer allowing
traditional wire bonding to be adequate. TSV allow for shorter
interconnects by forming an interconnect in the z-axis. The
interconnect is created through a substrate (e.g. wafer), by
forming a via extending from a front surface to a back surface of
the substrate. TSV are also useful in forming interconnects for
stacked wafers, stacked chip, and/or combinations thereof for 3-D
packaging technologies.
[0004] In fabricating stacked semiconductor devices, a liquid
no-flow underfill (NFU) including a flux is typically used for
stacking and coupling two devices. The NFU layer is subjected to a
thermal process (e.g., curing/reflow cycle) in which the NFU layer
is cured and encapsulates the structures in a region between the
devices. Also, solder bumps of one of the devices are reflowed and
form a solder joint with TSV structures of the other device such
that the devices become electrically coupled. For each additional
device that is to be stacked and coupled, an additional NFU layer
is provided and the thermal process is repeated. Although this
method has been satisfactory for its intended purpose, it has not
been satisfactory in all respects. One of the disadvantages is that
the lower NFU layers are subjected to many curing/reflow cycles
during the fabrication of stacked semiconductor device. This may
increase the thermal stress of the NFU layer, and may induce
various defects such as voids in the NFU layer, bump cracks or
fracture, and peeling of the NFU layer, and thus may lead to poor
device performance and reliability.
[0005] Therefore, a need exists for a method for fabricating a
stacked semiconductor device that reduces the thermal stress of the
coating material between devices.
BRIEF DESCRIPTION OF THE DRAWINGS
[0006] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is emphasized that, in accordance with the standard
practice in the industry, various features are not drawn to scale.
In fact, the dimensions of the various features may be arbitrarily
increased or reduced for clarity of discussion.
[0007] FIGS. 1A to 1G, illustrated are cross sectional views of a
stacked semiconductor device at various stages of fabrication;
[0008] FIG. 2, illustrated is a cross sectional view of a stacked
semiconductor device with various defects that may be induced
during fabrication;
[0009] FIG. 3, illustrated is a flowchart of a method for
fabricating a stacked semiconductor device according to various
aspects of the present disclosure;
[0010] FIGS. 4A to 4E, illustrated are cross-sectional views a
stacked semiconductor device at various stages of fabrication
according to the method of FIG. 3;
[0011] FIG. 5, illustrated is a flowchart of an alternative method
for fabricating a stacked semiconductor device according to various
aspects of the present disclosure;
[0012] FIGS. 6A to 6F, illustrated are cross sectional views of a
stacked semiconductor device at various stages of fabrication
according to the method of FIG. 5;
[0013] FIG. 7, illustrated are cross-sectional views of the stacked
semiconductor device of FIG. 4 being fabricated with an alternative
method for forming a coating material; and
[0014] FIGS. 8A and 8B, illustrated are cross-sectional views of
the stacked semiconductor device of FIG. 6 being fabricated with an
alternative method for forming a coating material.
DETAILED DESCRIPTION
[0015] The present disclosure relates generally to semiconductor
manufacturing and more particularly, to a method for fabricating a
stacked semiconductor device. It is understood, however, that
specific embodiments are provided as examples to teach the broader
inventive concept, and one of ordinary skill in the art can easily
apply the teaching of the present disclosure to other methods or
devices. In addition, it is understood that the methods and
apparatus discussed in the present disclosure include some
conventional structures and/or processes. Since these structures
and processes are well known in the art, they will only be
discussed in a general level of detail.
[0016] Furthermore, reference numbers are repeated throughout the
drawings for sake of convenience and example, and such repetition
does not indicate any required combination of features or steps
throughout the drawings. Moreover, the formation of a first feature
over, on, adjacent, abutting, or coupled to a second feature in the
description that follows may include embodiments in which the first
and second features are formed in direct contact, and may also
include embodiments in which additional features may be formed
interposing the first and second features, such that the first and
second features may not be in direct contact. Also, the formation
of a feature on a substrate, including for example, etching a
substrate, may include embodiments where features are formed above
the surface of the substrate, directly on the surface of the
substrate, and/or extending below the surface of the substrate.
[0017] Referring to FIGS. 1A to 1G, illustrated are cross sectional
views of a stacked semiconductor device 100 at various stages of
fabrication. In FIG. 1A, the semiconductor device 100 may include a
first level device 102 having a circuit. Accordingly, the device
102 may comprise a substrate 104 that includes one or more features
formed on the substrate. These features are not illustrated but may
be present on the substrate 104, and may include, for example, gate
structures, source/drain regions, other doped regions, isolation
structures, contacts to one or more of the gate, source, or drain
regions, memory elements (e.g., memory cells), and/or other
features known in the art. The device 102 may further include one
or more metal layers and inter-layer dielectric (collectively
referred to as interconnect structure) formed on the front surface
106 of the substrate 104. The device 102 may further include one or
more contact pads that provide electrical contact to the
interconnect structure.
[0018] The device 102 may further include a plurality of
through-silicon via (TSV) structures 108 formed on and in the
substrate 104. The TSV structures 108 may be vertical conductive
structures that pass through the substrate 104. Also, the TSV
structures 108 may be electrically coupled to the contact pads, and
electrically coupled to the interconnect structure. The TSV
structures 108 may be exposed from the back surface 110 of the
substrate 104 for 3-D packaging such as stacking and coupling to
other devices as will be discussed later herein. The device 102 may
further include a plurality of bonding pads 112 that are
electrically coupled to the interconnect structure, and may support
conductive features such as solder bumps (or balls) for use in
flip-chip packaging technology and other suitable packaging
technologies.
[0019] The device 102 may be secured to a vacuum plate 120 that is
capable of providing a vacuum suction force 122, 124. The vacuum
plate 120 may also provide a stable base support for stacking a
number of devices to form the stacked semiconductor device 100. The
vacuum plate 120 may include a support plate 126 with a buffer
layer formed thereon for supporting an area of the front surface
106 of the device 102 that includes various structures such as
bonding pads 112. Accordingly, these various structures on the
front surface 106 of the device 102 are protected from being
damaged during the stacking process. The area of the front surface
106 of the device 102 that does not include external structures has
a substantially flat surface, and may be well suited for securing
to the vacuum plate 120 via the suction force 122, 124.
Alternatively, the device 102 may optionally be secured to a
carrier substrate with an adhesive material.
[0020] A layer 130 of a liquid no-flow underfill (NFU) may be
formed on the back surface 110 of the device 102. The NFU may
function as both a low viscosity liquid epoxy material for
encapsulating, and a flux component for reflowing. The layer 130 of
NFU may be applied (referred to as NFU printing) to the back
surface 110 by a dispenser 132. It should be noted that "front" and
"back" such as the front surface of the substrate and the back
surface of the substrate, as used herein are arbitrary and the
surfaces of the substrate may be referenced by any suitable
convention.
[0021] In FIG. 1B, the semiconductor device 100 may include a
second level device 140 with a circuit. Accordingly, the device 140
may include a substrate 142 having various features (similar to the
features discussed in device 102) that function as the circuit, a
plurality of bonding pads 143 and micro bumps 144 formed on the
front surface 145 that are electrically coupled to the circuit, and
a plurality of TSV structures 146 that extend through the substrate
and may be exposed from the back surface 147. The device 140 may be
placed overlying the layer 130 and the device 102 such that the
micro bumps 144 are in contact and aligned with the proper TSV
structures 108 of device 102.
[0022] In FIG. 1C, the semiconductor device 100 including device
102 and device 140 may be transferred to a heating chamber 150 such
as an oven, and the semiconductor device 100 may be heated 155 to a
desired temperature or range of temperatures for a period of time
(e.g., curing/reflow cycle). For example, the temperature range may
be from 200 to 300.degree. C. As previously noted, the layer 130
includes an epoxy material for encapsulating and a flux component
for reflowing. Accordingly, responsive to the heating, the epoxy
material fully cures and encapsulates the various structures
between the device 102 and the device 140. This provides the
required mechanical strength and stability for stacking and bonding
the device 102 to device 140. Simultaneously, the flux component
reflows the micro bumps 144 of device 140, and forms a solder joint
with the TSV structure 108 of device 102. As such, the circuit of
device 102 may be electrically coupled to the circuit of device
140.
[0023] In FIG. 1D, a layer 160 of a liquid NFU may be formed on the
back surface 147 of the device 140 via the dispenser 132. As
previously noted, the NFU may function as both a low viscosity
liquid epoxy material for underfilling or encapsulating, and a flux
component for reflowing or soldering. In FIG. 1E, the semiconductor
device 100 may include a third level device 170 with a circuit.
Accordingly, the device 170 may include a substrate 172 having
various features (similar to the features discussed in device 102)
that function as the circuit, a plurality of bonding pads 173 and
micro bumps 174 formed on the front surface 175 that are
electrically coupled to the circuit, and a plurality of TSV
structures 176 that extend through the substrate and may be exposed
from the back surface 177. The device 170 may placed overlying the
layer 160 and the device 140 such that the micro bumps 174 are in
contact and aligned with the proper TSV structures 146 of device
140.
[0024] In FIG. 1F, the semiconductor device 100 including device
102, device 140, and device 170 may be placed in the heating
chamber 150, and the semiconductor device 100 may be heated 155 to
a desired temperature or range of temperatures for a period of time
(e.g., cycle) similar to the thermal process of FIG. 1C. The layer
160 fully cures and encapsulates the structures between the device
140 and the device 170, and the flux component reflows the micro
bumps 174 to form a solder joint with the TSV structure 146 of
device 140. However, the fully cured layer 130 is subjected to
another thermal cycle, and the thermal stress of layer 130 may be
increased. In FIG. 1G, the process above is repeated for each
additional device that is to be stacked, and the number of devices
may depend on the application and/or design requirements. After the
last device has been stacked and the last layer of NFU layer has
been fully cured, the vacuum suction force 122, 124 may be turned
off, and the semiconductor device 100 may be removed from the
vacuum plate 120 for further processing.
[0025] Referring to FIG. 2, illustrated are various defects that
may be induced during the fabrication of a stacked semiconductor
200. The stacked semiconductor 200 may be similarly fabricated as
was discussed in the stacked semiconductor 100 of FIG. 1. The
stacked semiconductor 200 may include a first 201, second 202,
third 203, fourth 204, fifth 205, and nth 206 device (where n is
the total number of devices being stacked). The device 201 may
include a plurality of solder bumps (or balls) 207 each formed on a
bonding pad 208 for use in flip-chip packaging technology or other
suitable packaging technologies. The device 201 may further include
a plurality of redistribution layer (RDL) structures 209 for
rerouting bonding pads to various areas of the device 201. The
device 201 may further include a plurality of TSV structures 210
for coupling to other devices in 3-D device packaging and/or device
stacking configurations.
[0026] As previously discussed, a NFU layer 211 (similar to the
layer 130 of FIG. 1) may be dispensed (also referred to as NFU
printing) over the device 201, and the device 202 may be placed
overlying the NFU layer 211 and the device 201. The device 202 may
include a plurality of micro bumps (or balls) 216 each formed on a
bonding pad 218 for coupling to one or more TSV structures 210 of
device 201. The NFU layer 211 may then be subjected to a thermal
process to cure the NFU layer 211 and reflow the micro bumps to
electrically couple the devices 201 and 202. The device 202 may
further include one or more TSV structures 219 for coupling to
another device in 3-D device packaging and/or device stacking
configurations. The process above is repeated for each of the other
devices 203, 204, 205, 206 to form the stacked semiconductor device
200. Accordingly, the NFU layer 211 may be subjected to (n-1) times
of curing/reflow cycles, NFU layer 212 may be subjected to (n-2)
times of curing/reflow cycles, NFU layer 213 may be subjected to
(n-3) times of curing/reflow cycles, NFU layer 214 may be subjected
to (n-4) times of curing/reflow cycles, and NFU layer 215 may be
subjected to (n-5) times of curing/reflow cycles, and so forth.
Therefore, each of the NFU layers 211-215 may have a different
thermal history or cycle than the others, with the NFU layer 211
having the longest thermal cycle and the NFU layer 215 having the
shortest thermal cycle (e.g., for n=6 total devices).
[0027] It has been observed that various defects may be induced
with the increase in the thermal history or cycle of the NFU layer.
That is, the longer or more times the NFU layer is subjected to
thermal processing (e.g., curing/reflow cycles), the more likely
defects will be induced by thermal stress experienced in the NFU
layer. For example, the NFU layer 211 may have the longest thermal
cycle, and the defects that may be induced include a bump crack or
fracture 220 in which the micro bump may be separated from the bond
pad, voids 222, 224, 226, 228 in the NFU layer 211, and
delaminating or peeling 229 occurring at the interface of the NFU
layer 211 and micro bumps 216. The NFU layer 212 may have the
second longest thermal cycle, and thus similar defects may be
induced such as laminating or peeling 230, and voids 234, 236, 238
in the NFU layer 212. The NFU layer 213 may have the third longest
thermal cycle, and thus may induce defects such as voids 240, 242
in the NFU layer 213. The NFU layer 215 may have the shortest
thermal cycle that includes one curing/reflow cycle, and thus may
have substantially no or very few defects induced by thermal
stress. However, the NFU layer 215 is a low viscosity liquid before
being fully cured, and thus some defects such as voids may develop
even after one curing/reflow cycle. These various defects can lead
to poor device performance and reliability.
[0028] For the sake of example, an example device will be shown
below in a series of processing operations to illustrate various
embodiments of the present invention. It is understood that several
processing steps may be only briefly described, such steps being
well known to those of ordinary skill in the art. Also, additional
processing steps can be added, and certain of the following
processing steps can be removed and/or changed while still
implementing the claimed invention. Thus, the following description
should be understood to represent examples only, and are not
intended to suggest that one or more steps is required. It should
further be noted that "front" and "back" such as the front surface
of the substrate and the back surface of the substrate, as used
herein are arbitrary and the surfaces of the substrate may be
referenced by any suitable convention.
[0029] Referring to FIG. 3, illustrated is a method 300 for
fabricating a stacked semiconductor device that utilizes one
curing/reflow cycle. Referring also to FIGS. 4A to 4E, illustrated
are cross sectional views of a stacked semiconductor device 400
being fabricated according to the method 300 of FIG. 3. In FIG. 4A,
the method 300 begins with block 302 in which a first level device
402 may be provided with a first coating material 404 formed
thereon.
[0030] The coating material 404 may be formed by applying a
lamination or tape 406 having a polymer component and a flux
component. The coating material 404 may include an epoxy polymer
that is configured as a high viscosity solid film. Accordingly, the
coating material 404 may have sufficient mechanical strength and
stability to hold a device in place before the material is later
fully cured. Alternatively, the coating material 404 may optionally
be formed by a spin-coating process. For example, the coating
material 404 may include a liquid epoxy polymer with a flux
component that is applied to the device 402, and the coating
material 404 may be subjected to a pre-treatment process. In the
pre-treatment process, the coating material 404 may be heated to a
temperature that is less than a curing temperature of the coating
material 404. For example, the coating material 404 may be heated
to a temperature from about 80 to about 150.degree. C. The heating
may include a heat source such as a flash lamp, ultraviolet
illumination, or other suitable heating mechanisms. Accordingly,
the coating material 404 may be transformed from a liquid to a
B-stage polymer (e.g., intermediate stage between liquid and fully
cured polymer), such that the viscosity of the coating material is
increased. Thus, the coating material 404 may have sufficient
mechanical strength and stability to hold a device in place before
the material is later fully cured. Further, the coating material
404 may include a promoter for increasing the adhesive properties
of the coating material 404, and other additives for enhancing the
curing of the coating material 404.
[0031] The device 402 may include a circuit formed in a
semiconductor substrate 410 such as a silicon in a crystalline
structure. Alternatively, the substrate 410 may have an epitaxial
layer overlying a bulk semiconductor. Further, the substrate 410
may be strained for performance enhancement. For example, the
epitaxial layer may comprise semiconductor materials different from
those of the bulk semiconductor such as a layer of silicon
germanium overlying a bulk silicon, or a layer of silicon overlying
a bulk silicon germanium formed by a process including selective
epitaxial growth (SEG). Furthermore, the substrate 410 may include
a semiconductor-on-insulator (SOI) structure. For example, the
substrate 410 may include a buried oxide (BOX) layer formed by a
process such as separation by implanted oxygen (SIMOX). The
substrate 410 may include various doped wells, doped features, and
semiconductor layers configured to form various microelectronic
devices such as metal-oxide-semiconductor field effect transistor
(MOSFET) including complementary metal-oxide-semiconductor (CMOS),
imaging sensor including CMOS imaging sensor (CIS),
micro-electro-mechanical system (MEMS), memory cells, and/or other
suitable active and passive devices. The substrate 410 may also
include various isolation features configured to separate different
devices formed on the substrate. The isolation features may include
different structures and can be formed using different processing
technologies. For example, the isolation features may include
dielectric isolation features such as shallow trench isolation
(STI). The doped wells and doped features include p-type doped
region and/or an n-type doped region, formed by a doping process
such as ion implantation.
[0032] The device 402 may further include an interconnect structure
with one or more metal layers that are configured to connect
various doped regions and/or features in the semiconductor
substrate 410, resulting in the functional circuit. The
interconnect structure may include conductive materials such as
copper, copper alloy, titanium, titanium nitride, tantalum,
tantalum nitride, tungsten, polysilicon, metal silicide, or
combinations. The copper interconnect may be formed by a technique
such as CVD, sputtering, plating, or other suitable processes.
Alternatively or additionally, an aluminum interconnect may be used
and include an aluminum, aluminum/silicon/copper alloy, titanium,
titanium nitride, tungsten, polysilicon, metal silicide, or
combinations. The aluminum interconnect may be formed by a process
including physical vapor deposition (or sputtering), chemical vapor
deposition (CVD), or combinations thereof. Other manufacturing
techniques to form the aluminum interconnect may include
photolithography processing and etching to pattern the conductive
materials for vertical (via and contact) and horizontal connects
(conductive line).
[0033] The interconnect structure may include an inter-layer
dielectric with a low dielectric constant such as less than about
3.5. The dielectric may include silicon dioxide, silicon nitride,
silicon oxynitride, polyimide, spin-on glass (SOG), fluoride-doped
silicate glass (FSG), carbon doped silicon oxide, Black
Diamond.RTM. (Applied Materials of Santa Clara, Calif.), Xerogel,
Aerogel, amorphous fluorinated carbon, Parylene, BCB
(bis-benzocyclobutenes), SiLK (Dow Chemical, Midland, Mich.),
and/or other suitable materials. The dielectric may be formed by a
technique including spin-on, CVD, sputtering, or other suitable
processes. The metal layers and inter-layer dielectric may be
formed in an integrated process such as a damascene process or
lithography/plasma etching process.
[0034] The device 402 may include a plurality of bonding pads 412
for supporting solder bumps (or balls) and other external bonding
mechanisms for use in flip-chip packaging technology and other
suitable packaging technologies. The device 402 may further include
a plurality of redistribution layer (RDL) structures (not shown)
for rerouting the bonding pads to various areas of the device 402.
The bonding pads 412 may be formed within a passivation layer
overlying the top metal layer on the front surface 413 of the
substrate 410, and may be electrically coupled to the interconnect
structure. The device 402 may further include a plurality of
through-silicon via (TSV) structures 414. The TSV structures 414
may be vertical conductive structures that pass through the
substrate 410, and may be electrically coupled to the interconnect
structure and/or the bonding pads 412. The TSV structures 414 may
be exposed from the back surface 415 of the substrate 410 for 3-D
packaging such as stacking and coupling to other devices as will be
discussed later herein. Such TSV 3-D packaging creates vertical
connections through the substrate body, eliminates additional
wires, and produces a flatter and more compact structure.
[0035] The device 402 may be secured to a vacuum plate 420 that is
capable of providing a vacuum suction force 422, 424. The vacuum
plate 420 may also provide a stable base support for stacking a
number of devices to form the stacked semiconductor device 400. The
vacuum plate 420 may include a support plate 426 with a buffer
layer formed thereon for supporting an area of the front surface
413 of the device 102 that includes various structures such as
bonding pads 412. Accordingly, these various structures on the
front surface 413 of the device 402 are prevented from being
damaged during the stacking process. The area of the front surface
413 of the device 402 that does not include external structures has
a substantially flat surface, and may be well suited for securing
to the vacuum plate 420 via the suction force 422, 424.
Alternatively, the device 402 may optionally be secured to a
carrier substrate with an adhesive material.
[0036] In FIG. 4B, the method 300 continues with block 304 in which
a second level device 430 may be placed overlying the first coating
material 404 and the first level device 402. The device 430 may
include a second coating material 431 formed thereon. The coating
material 431 may be similar to the coating material 404, and may be
formed in a similar manner as discussed above. Also, the coating
material 431 may be pre-laminated on the device 430 prior to being
placed over the device 402, reducing processing time. The device
430 may further include a substrate 432 having various features
(similar to the features discussed in device 402) that function as
a circuit, a plurality of bonding pads 433 and micro bumps 434
formed on the front surface 435 that are electrically coupled to
the circuit via an interconnect structure, and a plurality of TSV
structures 436 that extend through the substrate 432 and may be
exposed from the back surface 437. The TSV structures 436 may be
electrically coupled to the interconnect structure and/or bonding
pads 433. A sufficient amount of force may be applied to the device
430 such that the front surface 435 contacts and adheres to the
coating material 404. Further, the micro bumps 434 of device 430
may be aligned with the proper TSV structures 414 of device 402,
and positioned proximate to or in contact with the TSV structures
414 for reflowing the micro bumps 434.
[0037] Alternatively, referring also to FIG. 7, the coating
material 404 may optionally be formed on the front surface 435 of
device 430 instead of being formed on the back surface 415 of
device 402 prior to stacking. Accordingly, the device 430 with the
coating material 404 may be flipped over 702 and stacked on the
device 402. A sufficient amount of force may be applied to the
device 430 such that the front surface 415 of device 402 contacts
and adheres to the coating material 404. Further, the micro bumps
434 of device 430 may be aligned with the proper TSV structures 414
of device 402, and positioned proximate to or in contact with the
TSV structures 414 for reflowing the micro bumps 434.
[0038] In FIG. 4C, the method 300 continues with block 306 in which
a third level device 440 may be placed overlying the second coating
material 431 and the second level device 430. The device 440 may
include a third coating material (not shown) formed thereon for
stacking another device. The device 440 may further include a
substrate 442 having various features (similar to the features
discussed in device 402) that function as a circuit, a plurality of
bonding pads 443 and micro bumps 444 formed on the front surface
445 that are electrically coupled to the circuit via an
interconnect structure, and a plurality of TSV structures 446 that
extend through the substrate 442 and may be exposed from the back
surface 447. The TSV structures 446 may be electrically coupled to
the interconnect structure and/or bonding pads 443. A sufficient
amount of force may be applied to the device 440 such that the
front surface 445 contacts and adheres to the coating material 431.
Also, the micro bumps 444 of device 440 may be aligned with the
proper TSV structures 436 of device 430, and positioned proximate
to or in contact with the TSV structures 436 for reflowing the
micro bumps 444.
[0039] It should be noted that the coating material 431 may
optionally be formed on the front surface 445 of device 440 instead
of being formed on the back surface 437 of device 430 prior to
stacking, as was similarly discussed above in FIG. 7. Accordingly,
subsequent coating materials may be formed in a similar manner for
stacking additional devices to form the stacked semiconductor
device 400.
[0040] The process above may be repeated for each additional device
that is to be stacked, and the number of devices may vary depending
on the design requirements of the stacked semiconductor device 400.
It should be noted that only three devices are described for the
sake of clarity and a better understanding of the disclosed
embodiments. In FIG. 4D, after the last device has been stacked,
the method 300 continues with block 308 in which the coating
materials 404, 431 may be cured in the same thermal process. The
semiconductor device 400 may be transferred to a heating chamber
450 such as an oven, and the semiconductor device 400 may be heated
455 to a desired temperature or range of temperatures for a period
of time (e.g., curing/reflow cycle). For example, the temperature
range may be from 200 to 300.degree. C. The heating chamber 450 may
include a heat source such as a flash lamp, ultraviolet
illumination, or other suitable heating mechanisms. As previously
noted, each coating material 404, 431 includes an epoxy polymer for
encapsulating and a flux component for reflowing. Accordingly,
responsive to the heating, the epoxy polymer fully cures and
encapsulates the various structures between the devices 402, 430,
and 440, and provides the required mechanical strength and
stability for stacking and bonding the devices. Simultaneously, the
flux component reflows the micro bumps 434, 444, and forms a solder
joint with the corresponding TSV structures 414, 436.
[0041] Therefore, the circuits of the devices 402, 430, and 440 may
be electrically coupled to each other to form a circuit for the
stacked semiconductor device 400. Accordingly, the coating
materials 404, 431 are fully cured and the micro bumps 434, 444 are
reflowed in the same curing/reflow cycle, and thus the coating
materials 404, 431 may have substantially similar thermal
histories. This greatly reduces the thermal stress of the coating
materials 404, 431 even as the number of devices being stacked
increases since all the coating materials will still be subjected
to one curing/reflowing cycle. The various defects induced by
thermal stress as discussed in FIG. 2 may be minimized, and thus
the performance and reliability of the semiconductor device 400 may
be improved. Further, since the coating materials 404, 431 may be
configured as a high viscosity solid film or a B-stage polymer for
device stacking, voids formed in the coating materials 404, 431
will be reduced as compared to using a low viscosity liquid NFU as
discussed in FIG. 2.
[0042] Additionally, the semiconductor device 400 may optionally be
subjected to a post-treatment process in a heating chamber to fully
crosslink the epoxy polymer of the coating materials 404 and 431.
In the post-treatment process, the semiconductor device 400 may be
heated to a temperature range from 100 to about 200.degree. C. The
heating chamber may include a heat source such as a flash lamp,
ultraviolet illumination, or other suitable heating mechanisms.
[0043] In FIG. 4E, after the curing/reflow process, the stacked
semiconductor device 400 may be removed from the vacuum plate 420
by turning off the vacuum suction force 422, 424. The semiconductor
device 400 may further include a plurality of solder bumps (or
balls) 460 for use in flip-chip packaging technology, and other
suitable packaging technologies. The devices 402, 430, 440 may each
include a chip (or die), and thus the method 300 of FIG. 3 may be
implemented for chip-to-chip stacking and bonding. Alternatively,
the devices 402, 430, 440 may each include a wafer, and thus the
method 300 of FIG. 3 may be implemented for wafer-to-wafer stacking
and bonding.
[0044] Referring to Referring to FIG. 5, illustrated is a method
500 for fabricating a stacked semiconductor device. Referring also
to FIGS. 6A to 6F, illustrated are cross sectional views of a
stacked semiconductor device 600 being fabricated according to the
method 500 of FIG. 5. The stacked semiconductor device 600 is
similar to the stacked semiconductor device 400 of FIG. 4 except
that the device 600 includes die-to-wafer stacking and bonding.
Similar features in FIGS. 4 and 6 are numbered the same for the
sake of simplicity and clarity.
[0045] In FIG. 6A, the method 500 begins with block 502 in which a
wafer 602 such as a semiconductor wafer may be provided with a
coating material 404 formed thereon. The wafer 602 may include
various semiconductor features (similar to the features discussed
in device 402) that function as a circuit, a plurality of bonding
pads 607 and conductive bumps 608 (e.g., Au, Cu, or other suitable
conductive material) formed on the front surface 609 that are
electrically coupled to the circuit via an interconnect structure
(not shown). The conductive bumps 608 may be used in flip-chip
packaging technology or other suitable packaging technologies. The
wafer 602 may further include a plurality of redistribution layer
(RDL) structures (not shown) for rerouting the bonding pads to
various areas of the wafer 602. The wafer 602 may further include a
plurality of through-silicon via (TSV) structures 610, 611, 612
that extend through the wafer 602 and may be exposed from the back
surface 613. Each of the TSV structures 610, 611, 612 may be formed
in a portion of the wafer 602 for coupling to a plurality of chips
as discussed below. The TSV structures 610, 611, 612 may be
electrically coupled to the circuit via the interconnect structure,
and may be electrically coupled to the bonding pads and/or other
conductive features. Alternatively, the TSV structures 610, 611,
612 may be part of the interconnect structure.
[0046] The wafer 602 may be secured to a vacuum plate 420 that is
capable of providing a vacuum suction force 422, 424. The vacuum
plate 420 may also provide a stable base support for stacking a
number of devices to form the stacked semiconductor device 600. The
vacuum plate 420 may include a support plate 426 with a buffer
layer formed thereon for supporting an area of the front surface
609 of the wafer 602 that includes various structures such as
conductive bumps 608. Accordingly, these various structures on the
front surface 609 of the wafer 602 are prevented from being damaged
during the stacking process. The area of the front surface 609 of
the wafer 602 that does not include external structures has a
substantially flat surface, and may be well suited for securing to
the vacuum plate 420 via the suction force 422, 424.
[0047] In FIG. 6B, the method 500 continues with block 504 in which
a plurality of first level chips 621, 622, 623 may be stacked on
the coating material 404 and the wafer 602. It should be noted the
number of first level chips may vary, and that only three chips are
shown for the sake of clarity and better understanding of the
disclosed embodiments. The chips 621, 622, 623 may each include a
circuit such as memory cells, and a bump layer 630 (including
bonding pads) for electrically coupling to the corresponding TSV
structures 610, 611, 612 of the wafer 602. Accordingly, the
circuits of chips 621, 622, 623 may be electrically coupled to the
circuit of wafer 602. The bump layer 630 may include solder bumps,
Au bumps, Cu bumps, or other suitable conductive bumps known in the
art. Each of the chips 621, 622, 623 may further include a
plurality of TSV structures 632 for coupling to other chips as
discussed below. The chips 621, 622, 623 may be stacked on the
wafer 602 by a robotic arm 640 or other suitable mechanism such
that the bump layer 630 is accurately aligned with the
corresponding TSV structures 610, 611, 612, and the bump layer 630
is proximate to or in contact with the corresponding TSV structures
for reflowing. Further, the chips 621, 622, 623 may be held in
place by the coating material 404. The chips 621, 622, 623 may
further include a coating material 645 formed thereon, the coating
material 645 may be substantially similar as the coating material
404 and may be formed in a similar manner.
[0048] Alternatively, referring also to FIG. 8A, a coating material
802 (similar to the coating material 404 in FIG. 6A) may be formed
on the first level chips 621, 622, 623 instead of being formed on
the back surface 613 of the wafer 602 (in FIG. 6A) prior to
stacking the first level chips on the wafer as discussed above in
FIG. 6B.
[0049] In FIG. 6C, the method 500 continues with block 506 in which
a plurality of second level chips 651, 652, 653 may be stacked on
the coating material 645 and the first level chips 621, 622, 623,
respectively. The chips 651, 652, 653 may each include a circuit
such as memory cells, and a bump layer 654 (including bonding pads)
for electrically coupling to the TSV structures 632 of the
corresponding first level chips 621, 622, 623. Accordingly, the
circuits of chips 651, 652, 653 may be electrically coupled to the
circuits of the chips 621, 622, 623, respectively. The bump layer
654 may include solder bumps, Au bumps, Cu bumps, or other suitable
conductive bumps known in the art. Each of the chips 651, 652, 653
may further include a plurality of TSV structures 656 for coupling
to other chips as discussed below. The chips 651, 652, 653 may be
stacked on the chips 621, 622, 623 by a robotic arm 640 such that
the bump layer 654 is accurately aligned with the TSV structures
632 of the corresponding chips 621, 622, 623, and the bump layer
654 is proximate to or in contact with the TSV structures for
reflowing. Further, the chips 651, 652, 653 may be held in place by
the coating material 645. The chips 651, 652, 653 may further
include a coating material 658 formed thereon, the coating material
658 may be substantially similar as the coating material 404 and
may be formed in a similar manner.
[0050] Alternatively, referring also to FIG. 8B, the coating
material 645 may be formed on the second level chips 651, 652, 653
instead of being formed on the first level chips 621, 622, 623 (in
FIG. 6B) prior to stacking the second level chips on the respective
first level chips as discussed above in FIG. 6C.
[0051] In FIG. 6D, the method 500 continues with block 508 in which
a plurality of top level chips 661, 662, 663 may be stacked on the
coating material 658 and the chips 651, 652, 653, respectively. It
should be noted the number of levels may vary depending on the
design requirements of the stacked semiconductor device 600, and
that only three levels are shown for the sake of clarity and better
understanding of the disclosed embodiments. The chips 661, 662, 663
may each include a circuit such as memory cells, and a bump layer
664 for electrically coupling to the TSV structures 656 of the
corresponding chips 651, 652, 653. Accordingly, the circuits of
chips 661, 662, 663 may be electrically coupled to the circuits of
chips 651, 652, 653, respectively. The bump layer 664 may include
solder bumps, Au bumps, or Cu bumps. The chips 661, 662, 663 may
not include TSV structures and coating material since these are the
top level chips and no other chips will be stacked over them. The
chips 661, 662, 663 may be stacked by a robotic arm 640 such that
the bump layer 664 is accurately aligned with the TSV structures
656 of the corresponding chips 651, 652, 653, and the bump layer
664 is proximate to or in contact with the corresponding TSV
structures for reflowing.
[0052] Alternatively, referring also to FIG. 8B, the coating
material 658 may be formed on the top level chips 661, 662, 663
instead of being formed on the second level chips 651, 652, 653 (in
FIG. 6C) prior to stacking the top level chips on the respective
second level chips as discussed above in FIG. 6D.
[0053] In FIG. 6E, the method 500 continues with block 510 in which
the coating materials 404, 645, 658 may be cured in the same
thermal process. The semiconductor device 600 may be transferred to
a heating chamber 450 such as an oven, and the semiconductor device
600 may be heated 455 to a desired temperature or range of
temperatures for a period of time (e.g., curing/reflow cycle). For
example, the temperature range may be from 200 to 300.degree. C. As
previously noted, each coating material 404, 645, 658 includes an
epoxy polymer for encapsulating and a flux component for reflowing.
Accordingly, responsive to the heating, the epoxy polymer fully
cures and encapsulates the various structures between the chips
621-623, 651-653, 661-663, and between the chips 621-623 and wafer
602, and provides the required mechanical strength and stability
for stacking and bonding the chips and wafer. Simultaneously, the
flux component reflows the bump layers 630, 654, 664, and forms a
electrical joint with the corresponding TSV structures 610-612,
632, 656.
[0054] Accordingly, the coating materials 404, 645, 658 are fully
cured and the bump layers 630, 654, 664 are reflowed in the same
curing/reflow cycle, and thus the coating materials 404, 645, 658
may have substantially similar thermal histories. This greatly
reduces the thermal stress of the coating materials 404, 645, 658
even as the number of devices being stacked increases since all the
coating materials will still be subjected to one curing/reflowing
cycle. The various defects induced by thermal stress as discussed
in FIG. 2 may be minimized, and thus the performance and
reliability of the semiconductor device 600 may be improved.
Further, since the coating materials 404, 645, 658 may be
configured as a high viscosity solid film or a B-stage polymer for
device stacking, voids formed in the coating materials 404, 645,
658 will be reduced as compared to using a low viscosity liquid NFU
as discussed in FIG. 2.
[0055] Additionally, the semiconductor device 600 may optionally be
subjected to a post-treatment process in a heating chamber to fully
crosslink the epoxy polymer of the coating materials 404, 645, 658.
In the post-treatment process, the semiconductor device 600 may be
heated to a temperature range from 100 to about 200.degree. C. The
heating chamber may include a heat source such as a flash lamp,
ultraviolet illumination, or other suitable heating mechanisms.
[0056] In FIG. 6F, the method 500 continues with block 512 in which
the semiconductor device 600 may undergo a wafer molding process. A
molding compound 670, NFU, or other suitable material may be formed
partially surrounding the semiconductor device 600 for protection
and mechanical strength. The semiconductor device 600 may be
removed from the vacuum plate 420 and may undergo further
semiconductor processing.
[0057] Thus, provided is a method for fabricating a semiconductor
device which includes providing a first device, a second device,
and a third device, providing a first coating material between the
first device and the second device, providing a second coating
material between the second device and the third device, and
thereafter, curing the first and second coating materials in a same
process. In some embodiments, the first, second, and third devices
each include a circuit, the first and second devices each include a
through silicon via (TSV) structure, and the method further
includes, responsive to the curing, electrically coupling the
circuits of the first, second, and third devices using the TSV
structure of the first and second devices, wherein the first and
second coating materials both include a flux component that
facilitates the coupling. In some other embodiments, the first,
second, and third devices are each one of a die and a wafer.
[0058] In still other embodiments, the third device includes a
third coating material formed thereon, and the method includes
overlying a fourth device on the third coating material and the
third device prior to the curing, the fourth device being one of a
die and a wafer, wherein the curing includes curing the third
coating material such that the third coating material transforms
form the first state to a second state substantially the same as
the first and second coating materials. In other embodiments, the
method further includes pre-treating the first and second coating
materials prior to the curing. In some embodiments, the
pre-treating includes heating the first and second coating
materials to a temperature that is less than a curing temperature
of the first and second coating materials. In other embodiments,
the method further includes post-treating the first and second
coating materials after the curing.
[0059] In some other embodiments, the step of providing the first
coating material includes forming the first coating material on the
first device, and overlying the second device on the first coating
material and the first device, and the step of providing the second
coating material includes forming the second coating material on
the second device, and overlying the third device on the second
coating material and the second device. In still other embodiments,
the step of providing the first coating material includes forming
the first coating material on the second device, and overlying the
second device with the first coating material on the first device,
and the step of providing the second coating material includes
forming the second coating material on the third device, and
overlying the third device with the second coating material on the
second device.
[0060] Also provided is a semiconductor device that includes a
first device, a second device overlying the first device and
electrically coupled to the first device, a third device overlying
the second device and electrically coupled to the second device, a
first coating material disposed between the first and second
devices, and a second coating material disposed between the second
and third devices, wherein the first and second coating materials
are configured with substantially similar thermal histories. In
some embodiments, the first and second coating materials have
substantially the same curing cycles. In other embodiments, the
first, second, and third devices are each one of a die and a wafer.
In some other embodiments, the method further includes providing a
fourth device, the fourth device being one of a die and a wafer,
providing a third coating material between the third device and the
fourth device, and the step of curing includes curing the third
coating material in the same process as the first and second
coating materials.
[0061] In still other embodiments, the first, second, and third
devices each include a plurality of through silicon via (TSV)
structures. In some embodiments, one of the TSV structures of the
first device is electrically coupled to one of the TSV structures
of the second device, and where one of the TSV structures of the
second device is electrically coupled to one of the TSV structures
of the third device. In other embodiments, the first device
includes a plurality of conductive bumps for connecting to another
semiconductor device. In some other embodiments, the semiconductor
device further includes a carrier substrate for supporting a
structure, and the first device overlies the carrier substrate and
is secured to the carrier substrate.
[0062] Additionally, a method for fabricating a stacked
semiconductor device is provided which includes providing a first
device having a circuit and a first coating material formed
thereon, stacking a second device on the first coating material and
the first device, the second device having a circuit and a second
coating material formed thereon, stacking a third device on second
coating material and the second device, the third device having a
circuit, and performing one thermal process that electrically
couples the circuits of the first, second, and third devices to
form a circuit of the stacked semiconductor device. In some
embodiments, the method further includes pre-treating the first and
second coating materials prior to the one thermal process, where a
temperature of the pre-treating is from about 80.degree. C. to
about 150.degree. C. In some other embodiments, the method further
includes post-treating the first and second coating materials after
the one thermal process, where a temperature of the post-treating
is from about 100.degree. C. to about 200.degree. C.
[0063] In still other embodiments, a temperature of the one thermal
process is from about 200.degree. C. to about 300.degree. C. In
other embodiments, the fourth device includes a third coating
material formed thereon, the third coating material substantially
the same as the first and second coating materials, the method
further includes stacking a fifth device on the third coating
material and the fourth device, the fifth device being a chip with
a circuit, and the circuit of the fifth device is electrically
coupled to the circuit of the fourth device in response to the
thermal process. In still other embodiments, the method further
includes selecting the first and second coating materials to be one
of a B-stage polymer and a solid film.
[0064] Although embodiments of the present disclosure have been
described in detail, those skilled in the art should understand
that they may make various changes, substitutions and alterations
herein without departing from the spirit and scope of the present
disclosure. For example, although the embodiments disclosed herein
uses TSV structures for chip and wafer packaging, it is understood
that the methods may be implemented in other traditional packaging
technologies that do not use TSV structures. Accordingly, all such
changes, substitutions and alterations are intended to be included
within the scope of the present disclosure as defined in the
following claims.
[0065] Several different advantages exist from these and other
embodiments. The methods and stacked semiconductor devices
disclosed herein provide a simple and cost-effective technique for
minimizing various defects induced by thermal stress in stacked
semiconductor devices. Thus, the performance and reliability of
stacked semiconductor devices will be improved. The
curing/reflowing of the coating layers of the stacked semiconductor
device are performed in one thermal process. Accordingly, the
fabrication of stacked semiconductor devices will take less
processing time, and fewer equipment will be used to complete a
full multilayer process thereby reducing costs. The coating
material disclosed herein may be configured as a lamination or tape
such that it is easy to apply to devices before they are stacked
and bonded together to form a stacked semiconductor device.
Further, the methods and stacked semiconductor devices disclosed
herein may be implemented for chip-to-chip stacking, wafer-to-wafer
stacking, and chip-to-wafer stacking.
* * * * *