U.S. patent application number 13/344207 was filed with the patent office on 2012-05-10 for aluminum bond pads with enhanced wire bond stability.
This patent application is currently assigned to LSI Corporation. Invention is credited to Frank A. Baiocchi, John M. DeLucca, John W. Osenbach.
Application Number | 20120111927 13/344207 |
Document ID | / |
Family ID | 42340880 |
Filed Date | 2012-05-10 |
United States Patent
Application |
20120111927 |
Kind Code |
A1 |
Baiocchi; Frank A. ; et
al. |
May 10, 2012 |
ALUMINUM BOND PADS WITH ENHANCED WIRE BOND STABILITY
Abstract
A method of forming an electronic device bond pad includes
providing an electronic device substrate having an Al bond pad
located thereover. An aluminum layer is formed over the Al bond
pad. A metal layer is formed located between the Al bond pad and
the aluminum layer. The metal layer comprises one or more of Ni, Pd
and Pt and has a total concentration of Ni, Pd and/or Pt of at
least about 50 wt. %. A gold bond wire may be attached to the
aluminum layer.
Inventors: |
Baiocchi; Frank A.;
(Allentown, PA) ; DeLucca; John M.; (Wayne,
PA) ; Osenbach; John W.; (Kutztown, PA) |
Assignee: |
LSI Corporation
Milpitas
CA
|
Family ID: |
42340880 |
Appl. No.: |
13/344207 |
Filed: |
January 5, 2012 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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12471982 |
May 26, 2009 |
8101871 |
|
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13344207 |
|
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Current U.S.
Class: |
228/203 ;
427/123 |
Current CPC
Class: |
H01L 2224/48465
20130101; H01L 2224/05083 20130101; H01L 2224/05624 20130101; H01L
2224/05624 20130101; H01L 2224/48507 20130101; H01L 2224/04042
20130101; H01L 2924/01046 20130101; H01L 24/45 20130101; H01L
2224/85205 20130101; H01L 2924/01028 20130101; H01L 24/05 20130101;
H01L 2224/05082 20130101; H01L 2224/05082 20130101; H01L 2224/05169
20130101; H01L 2224/45144 20130101; H01L 2224/45144 20130101; H01L
2224/48227 20130101; H01L 2924/01327 20130101; H01L 2924/14
20130101; H01L 2924/01033 20130101; H01L 2224/05624 20130101; H01L
2224/05624 20130101; H01L 2224/45144 20130101; H01L 2924/01018
20130101; H01L 2924/01047 20130101; H01L 2924/01029 20130101; H01L
2224/48225 20130101; H01L 2924/01078 20130101; H01L 2224/05124
20130101; H01L 2224/05169 20130101; H01L 2224/05124 20130101; H01L
2224/05624 20130101; H01L 2224/48091 20130101; H01L 2924/01079
20130101; H01L 2924/01204 20130101; H01L 2224/48465 20130101; H01L
2224/05155 20130101; H01L 2224/05556 20130101; H01L 24/48 20130101;
H01L 2224/45144 20130101; H01L 2224/45144 20130101; H01L 2224/48091
20130101; H01L 2924/01006 20130101; H01L 2924/01005 20130101; H01L
2224/05082 20130101; H01L 2224/48091 20130101; H01L 2224/48465
20130101; H01L 2924/00 20130101; H01L 2224/48465 20130101; H01L
2924/00 20130101; H01L 2924/01202 20130101; H01L 2924/01202
20130101; H01L 2224/05624 20130101; H01L 2924/01202 20130101; H01L
2924/00014 20130101; H01L 2924/013 20130101; H01L 2924/00015
20130101; H01L 2924/01204 20130101; H01L 2924/00 20130101; H01L
2924/00014 20130101; H01L 2224/05169 20130101; H01L 2924/01078
20130101; H01L 2924/01029 20130101; H01L 2924/00015 20130101; H01L
2924/01202 20130101; H01L 2924/01046 20130101; H01L 2924/01082
20130101; H01L 2924/00 20130101; H01L 2224/05164 20130101; H01L
2924/01013 20130101; H01L 2224/05164 20130101; H01L 2924/01046
20130101; H01L 2224/45144 20130101; H01L 2924/00 20130101; H01L
2224/05624 20130101; H01L 2224/05155 20130101; H01L 2924/013
20130101; H01L 2224/48227 20130101; H01L 2924/01046 20130101; H01L
2224/05624 20130101; H01L 2924/01028 20130101; H01L 2924/00013
20130101; H01L 2224/45144 20130101; H01L 2224/45144 20130101; H01L
2224/85205 20130101; H01L 2224/05155 20130101; H01L 24/03 20130101;
H01L 2224/05164 20130101; H01L 2224/85205 20130101; H01L 2924/0105
20130101; H01L 2224/48624 20130101; H01L 2224/05082 20130101; H01L
2224/48624 20130101 |
Class at
Publication: |
228/203 ;
427/123 |
International
Class: |
B23K 1/20 20060101
B23K001/20; B05D 5/12 20060101 B05D005/12 |
Claims
1. A method of forming an electronic device bond pad, comprising:
providing an electronic device substrate having an Al bond pad
located thereover; forming an aluminum layer over said Al bond pad;
forming a metal layer located between said Al bond pad and said
aluminum layer, said metal layer comprising one or more of Ni, Pd
and Pt and having a total concentration of Ni, Pd and/or Pt of at
least about 50 wt. %; and attaching a gold bond wire to said
aluminum layer.
2. The method of claim 1, wherein said metal layer has a thickness
in a range from about 10 nm to about 200 nm.
3. The method recited in claim 1, wherein said aluminum layer has a
thickness in a range from about 10 nm to about 200 nm.
4. The method recited in claim 1, wherein electronic device bond
pad has an average concentration of Ni, Pd and/or Pt in a range
from about 0.1 wt % to about 35 wt %.
5. The method recited in claim 1, wherein said electronic device
bond pad has an average concentration of Ni, Pd and/or Pt in a
range from about 0.5 wt % to about 12 wt %.
6. The method recited in claim 1, wherein said electronic device
bond pad has an average concentration of Ni, Pd and/or Pt in a
range from about 1 wt % to about 8 wt %.
7. The method recited in claim 1, wherein said substrate is mounted
to a device package, and said bond wire connects said Al layer to a
package pad.
8. The method of claim 1, wherein said gold bond wire comprises at
least about 99.99% gold.
9. The method of claim 1, further comprising forming an
intermetallic compound region comprising Al, Au and Ni, Pd and/or
Pt between said gold bond wire and said Al bond pad.
10. A method of forming an electronic device bond pad, comprising:
providing an electronic device substrate having an Al bond pad
located thereover; forming an aluminum layer over said Al bond pad;
and forming a metal layer located between said Al bond pad and said
aluminum layer, said metal layer comprising one or more of Ni, Pd
and Pt and having a total concentration of Ni, Pd and/or Pt of at
least about 50 wt. %.
11. The method of claim 10, further comprising attaching a gold
bond wire to said aluminum layer.
12. The method of claim 11, wherein said gold bond wire is at least
about 99.99% pure.
13. The method of claim 10, wherein said Ni, Pd and/or Pt is
located in a layer located between upper and lower aluminum layers
and having a thickness in a range from about 10 nm to about 200
nm.
14. The method recited in claim 10, wherein said Ni, Pd and/or Pt
has an average concentration in said electronic device bond pad in
a range from about 0.1 wt % to about 35 wt %.
15. The method recited in claim 10, wherein said Ni, Pd and/or Pt
has an average concentration in said electronic device bond pad in
a range from about 0.5 wt % to about 12 wt %.
16. The method recited in claim 10, wherein said Ni, Pd and/or Pt
has an average concentration in said electronic device bond pad in
a range from about 1 wt % to about 8 wt %.
17. The method recited in claim 11, wherein said substrate is
mounted to a device package, and said bond wire connects said Al
layer to a package pad.
18. The method of claim 11, wherein said attaching forms an
intermetallic compound region comprising Al, Au and Ni, Pd and/or
Pt between said gold bond wire and said Al bond pad.
19. A method of forming an electronic device bond pad, comprising:
forming an Al bond pad over an electronic device substrate; and
incorporating one or more of Ni, Pd and Pt into said Al bond pad to
result in a total concentration of said Ni, Pd and/or Pt in said Al
bond pad in a range from about 0.1 wt. % to about 35 wt. %.
20. The method of claim 19, further comprising attaching a bond
wire comprising at least about 99.99 wt. % gold to said Al bond
pad.
Description
CROSS REFERENCE RELATED APPLICATION
[0001] This application is a divisional of U.S. application Ser.
No. 12/471,982 filed on May 26, 2009, to Frank A. Baiocchi, et al.,
entitled "ALUMINUM BOND PADS WITH ENHANCED WIRE BOND STABILITY",
currently allowed, commonly assigned with the present invention and
incorporated herein by reference.
TECHNICAL FIELD
[0002] This application is directed, in general, to electronic
packaging, and more specifically to gold wire bonding.
BACKGROUND
[0003] An integrated circuit die is commonly electrically connected
to a package lead by a gold wire bonded to the package lead and an
Al bond pad on the die. The wire bonding process, sometimes called
thermosonic bonding, typically uses a combination of pressure and
ultrasonic energy to form a metallurgical bond between the gold
wire and the Al bond pad.
SUMMARY
[0004] One aspect provides a method of forming an electronic device
bond pad. The method includes providing an electronic device
substrate having an Al bond pad located thereover. An aluminum
layer is formed over the Al bond pad. A metal layer is formed
located between the Al bond pad and the aluminum layer. The metal
layer comprises one or more of Ni, Pd and Pt and has a total
concentration of Ni, Pd and/or Pt of at least about 50 wt. %. In
some embodiments a gold bond wire is attached to the aluminum
layer.
[0005] Another aspect provides a method of forming an electronic
device bond pad. An Al bond pad is formed over an electronic device
substrate. One or more of Ni, Pd and Pt is incorporated into the Al
bond pad to result in a total concentration of the Ni, Pd and/or Pt
in the Al bond pad in a range from about 0.1 wt. % to about 35 wt.
%. In some embodiments a bond wire comprising at least about 99.99
wt. % gold is attached to the Al bond pad.
BRIEF DESCRIPTION
[0006] Reference is now made to the following descriptions taken in
conjunction with the accompanying drawings, in which:
[0007] FIG. 1 illustrates an electronic device bond pad connected
to a package pad by a bond wire;
[0008] FIGS. 2A-2C illustrate a ball bond located over a bond pad
of the disclosure, with a layer including a group 10 metal located
therebetween;
[0009] FIG. 3 illustrates a bond pad of the disclosure in which an
Al layer is uniformly doped with a group 10 metal;
[0010] FIG. 4 illustrates a bond pad of the disclosure in which a
layer including a group 10 metal is located between an upper and a
lower Al layer;
[0011] FIG. 5 illustrates a bond pad of the disclosure in which a
layer including Al and a group 10 metal is located at an upper
surface of the bond pad; and
[0012] FIG. 6 illustrates a method of the disclosure.
DETAILED DESCRIPTION
[0013] Thermosonic bonding of a gold (Au) wire directly to an
aluminum (Al) bond pad typically forms an intermetallic compound
(IMC) region between the Au wire and the Al bond pad. The IMC
region includes, e.g., Au and Al. The thermodynamic system that
includes the Au wire, the IMC, and the Al pad is not at
equilibrium. Thus, atoms within the system may diffuse over time by
various diffusion pathways to lower the free energy of the system,
sometimes forming voids. The voids weaken the wire bond and may
lead to failure of the bond and the device associated with the bond
pad.
[0014] To reduce void formation, conventional Au wire may be
alloyed with about 1 wt % Pd. However, the Pd increases the
stiffness of the Au wire, which complicates the wire bond process
and may reduce reliability by other mechanisms.
[0015] It is presently recognized that void formation may be
reduced or substantially prevented by forming an Al bond pad that
includes an intrinsic group 10 metal within the bond pad. A group
10 metal is one or more of the elements Ni, Pd, or Pt in group 10
of the periodic table (IUPAC recommended nomenclature). The group
10 metal is intrinsic when it originates from within the bond pad,
but not from the Au wire, as described in various embodiments
below.
[0016] The group 10 metal provided by the Al pad may concentrate
over time in or near the IMC region formed by the thermosonic
process, inhibiting void formation. Advantageously, however, Au
wire may be used that does not contain Pd or other group 10 metal.
The Pd-free Au wire is more compliant than the Au--Pd alloy wire.
The more compliant wire is easier to process during wire bonding
operations, easing the burden on the manufacturer and resulting in
more reliable wire bond connections.
[0017] Turning initially to FIG. 1, illustrated is a packaged
electronic device 100. The device 100 includes a package substrate
110 and a device substrate 120. The substrate 120 may be, e.g., an
integrated circuit on a semiconductor substrate. The package
substrate 110 has a lead pad 130, and the substrate 120 has a bond
pad 140 formed thereover. The bond pad 140 is an Al layer that
includes Al and an intrinsic group 10 metal distributed therein as
described in detail below. As used herein and in the claims, an Al
layer is a layer including at least about 50 wt % Al. The Al layer
may include elemental Al, one or more alloys of Al, or one or more
intermetallic compounds of Al. An Au wire 150 connects the lead pad
130 to the bond pad 140. The connection may be formed, e.g., by a
thermosonic wire bond process. The wire bond process may be
conventional. Thus, e.g., the bond may be formed by a combination
of heat, pressure, and ultrasonic energy for a preselected
duration. The wire bonding process produces an Au ball 160 that
forms an electrical and metallurgical connection to the bond pad
140.
[0018] FIG. 2A illustrates the bond pad 140 formed according to the
disclosure with the ball 160 formed thereover. The bond pad 140
initially includes a layer 210 that may be formed according to the
embodiments described herein, e.g., an alloy of Al and a group 10
metal. The bonding process forms an IMC region 220 located between
the ball 160 and the layer 210. At least a portion of the group 10
metal is incorporated into the IMC region 220 during the bonding
process. Because the group 10 metal in the IMC region originates
from the bond pad 140, but not from the bond wire as found in
conventional processes, the group 10 metal is an intrinsic group 10
metal. As such, the above-described problems associated with the
conventional process can be avoided.
[0019] FIG. 2B illustrates the bond pad 140 after aging, e.g., a
sufficient period of time after formation of the Au bond that
various atomic species have diffused from their initial locations.
The thermodynamic system of the bond pad 140, the ball 160, and the
IMC region 220 is generally not in equilibrium immediately after
the wire bond process forms the IMC region 220. Au readily diffuses
into the Al bond pad 140 to form IMCs including Au and Al, e.g.,
Al.sub.2Au.sub.5 and Al.sub.2Au. In many cases, the solubility of
the group 10 metal is lower in a particular IMC than in Al. Thus,
as the Au diffuses into the bond pad 140, a portion of the group 10
metal is concentrated in an IMC region 230 between the ball 160 and
the layer 210. The bond pad 140 may thereby be transformed from an
alloy of Al and the group 10 metal to an IMC region of Al/Au IMCs
with a portion of the group 10 metal that was originally present in
the bond pad 140 remaining distributed therein. The presence of the
IMC region 230, rich in the group 10 metal relative to the layer
210 and the ball 160, is thought to inhibit void formation as the
bond pad 140 and ball 160 age. In some embodiments, the IMC region
230 includes at least about 50 wt % of the group 10 metal. The
reduction or absence of voids is expected to significantly reduce
the probability of wire bond failure in operational circuits
employing embodiments within the scope of the disclosure, thereby
increasing device reliability and lifetime.
[0020] In some embodiments, the bond pad 140 comprises an average
concentration of the group 10 metal in a range from about 0.1 wt %
to about 35 wt %. The lower limit is a value below which it is
believed an insufficient amount of the group 10 metal will be
incorporated into the IMC region 230 to confer a benefit. The upper
limit is associated with a quantity above which bonding of the wire
150 to the bond pad 140 may become difficult due to, e.g.,
increased hardness of the bond pad 140. In some cases, an average
concentration of the group 10 metal in the bond pad may be in a
range of about 0.5 wt % to about 12 wt %, e.g., to reduce variation
of properties of the bond pad 140 at the extreme limits of the
range. In some cases, the average concentration of the group 10
metal may be in a range of about 1 wt % to about 8 wt %. This
narrower range is thought to reduce any risks associated with the
maximum and minimum values of the larger ranges, while providing a
comfortable process margin.
[0021] FIG. 2C illustrates the bond pad 140 and the ball 160, with
an IMC region 240 located between the IMC region 230 and the ball
160. The IMC region 240 is an IMC region having a lower
concentration of the group 10 metal therein than is present in the
IMC region 230. In some cases, the thermodynamics of the system
including the layer 210, the ball 160 and the IMC region 240 result
in the IMC region 230 being located between two regions having a
lower concentration of the group 10 metal. Thus, in the illustrated
embodiment, the peak concentration of the group 10 metal is located
in the IMC region 230, i.e., between the IMC region 240 and the
layer 210. In such cases, the ball 160 may not directly contact the
IMC region 230.
[0022] In some embodiments, the wire 150 is at least about 99.99 wt
% Au. When the wire 150 is 99.99 wt % Au, it is sometimes referred
to as "4 nines" or "4N." In some cases, the wire 150 and/or ball
160 are essentially free of a group 10 metal, including Pd.
"Essentially free of a group 10 metal" means having a total
concentration of all group 10 metals less than about 0.01 wt %.
Thus, essentially all of the group 10 metal present in the bond pad
140 is intrinsic group 10 metal.
[0023] FIG. 3 illustrates one embodiment of the bond pad 140,
generally designated 300, formed in accordance with the disclosure,
before wire bonding. The bond pad 140 is formed from a layer 310
located over the substrate 120. The layer 310 is a homogeneous Al
alloy that includes a group 10 metal, e.g., the group 10 metal is
about uniformly distributed in the bond pad 140. In this context,
uniformity is over a distance scale on the order of tens of nm, so
localized areas enriched in the group 10 metal such as grain
boundaries and dendrites do not render the distribution of the
group 10 metal nonuniform. A portion of the homogeneously
distributed group 10 metal is expected to concentrate to form the
IMC region 230, e.g., after wire bonding and aging as previously
described. A portion of the group 10 metal is expected to remain in
the layer 310. Thus the remaining portion is located below the IMC
region 230. The layer 310 may optionally include one or more
alloying metals other than group 10 metals in concentrations of a
few wt % or less. For example, about 0.5% Cu is commonly included
to reduce hillock formation.
[0024] The layer 310 may be formed, e.g., by physical vapor
deposition (PVD) or evaporation followed by conventional pattern
and etch to form the bond pad 140. In the case of a PVD process, a
metal target may be used that includes Al and the group 10 metal in
the concentration desired in the layer 310. An evaporation process
may be similarly configured to produce the desired alloy of Al and
the group 10 metal. Specific process parameters typically depend on
manufacturer-specific or device-specific process integration
factors. One skilled in the pertinent art may determine a suitable
process compatible with a particular manufacturer's process
flow.
[0025] FIG. 4 illustrates another embodiment, generally designated
400, of the bond pad 140 formed according to the disclosure. A
lower Al layer 410 comprises Al, but is essentially free of a group
10 metal. In some embodiments, the layer 410 comprises at least
about 99 wt % Al. The layer 410 may optionally include alloying
elements to, e.g., suppress hillocks. An upper layer 420 over the
layer 410 also comprises Al, which may be the same alloy as that
used in the layer 410, but need not be.
[0026] A metal layer 430 that is a concentrated layer of a group 10
metal is located between the lower and upper layers 410, 420. As
described previously, the group 10 metal may diffuse to a location
in the bond pad 140 that advantageously suppresses voids. The layer
430 may be configured to provide a desired quantity of the group 10
metal, or to provide a concentration of the group 10 metal within
the bond pad 140. The layer 430 may be a substantially pure (e.g.,
greater than about 99 wt %) group 10 metal, an alloy of two or more
group 10 metals, or include a metal that is not a group 10 metal.
The layer 430 may even include two or more sub-layers therein, such
as a layer of Ni and a layer of Pd. However, unlike some
conventional bond pad structures, the bond pad 140 presents Al at
its upper surface, since the layer 420 includes Al.
[0027] In the embodiment 400, the bond pad 140 may be formed by
deposition of the layer 410, e.g., an Al composition including any
desired impurities, followed by deposition of the layer 430, on
which the layer 420 with an Al composition is formed. Conventional
PVD or evaporation may be used for each layer. In some embodiments,
a two-chamber deposition tool is used, in which the Al composition
is deposited in one chamber, and the group 10 metal is deposited in
another chamber.
[0028] The layer 410 may be formed by, e.g., PVD or evaporation. In
one embodiment, a PVD process in a first deposition chamber under
vacuum forms the layer 410 having a desired Al composition. The PVD
process may be, e.g., a conventional process using process
parameters determinable by one skilled in the pertinent art. The
substrate 120 is transferred to a second deposition chamber without
breaking vacuum, where a PVD process forms the layer 430 with a
group 10 metal composition. The substrate 120 is then transferred
back to the first deposition chamber without breaking vacuum, where
a PVD process forms the layer 420 with the desired Al composition.
In this manner, incorporated ambient impurities in the bond pad 140
are minimized. However, embodiments in which vacuum is broken,
e.g., the layer 410 or layer 430 is exposed to the ambient before
deposition of the overlying layer, are within the scope of the
disclosure.
[0029] After forming the desired metal layer stack, the stack may
be patterned and etched to form the bond pad 140. In some cases, a
dry (plasma) etch process may be used. The process may use
conventional plasma etch steps. In some cases, a single
conventional etch process may be used to etch the entire metal
stack consisting of the layer 410, 420, 430. For example, a plasma
process optimized for Al etch may physically sputter the group 10
metal when the layer 430 is sufficiently thin. Such an etch process
is typically selective to the substrate 120, thereby minimizing
removal of material therefrom. Depending on the thickness and
composition of the layer 430, the plasma etch may require multiple
steps using different etch chemistry optimized to remove the Al
composition of the layers 410, 420 and the group 10 metal
composition of the layer 430. In a nonlimiting example, the layers
410, 420 may be removed by a Cl.sub.2/BCl.sub.3 plasma. A
CF.sub.4/O.sub.2 passivation step may be used, e.g., to removed an
underlying TiN barrier. The layer 430 may be removed, e.g., by a
Cl.sub.2/Ar or Cl.sub.2/SF6 plasma.
[0030] In some embodiments, a conventional wet etch may be used to
remove the layers 410, 420, the group 10 metal composition of the
layer 430, or both. For example, a 3:1 HCl:HNO.sub.3 etch may
remove the layer 430, while a PAN etch may remove the layers 410,
420. Those skilled in the pertinent art are capable of determining
a suitable etch process with knowledge of the specific thicknesses
and compositions of the various layers of the bond pad 140.
[0031] The steps of forming the layer 430 and the layer 420 may be
repeated in some cases. Thus, for example, the bond pad 140 may
include the layer 410, over which alternating layers of a group 10
metal and an Al layer are located. In some cases such a
configuration may suppress voids more effectively than embodiments
using a single group 10 metal layer by, e.g., placing the group 10
metal at a more efficacious position within the bond pad 140.
[0032] In some embodiments, the layer 430 has a thickness in a
range of about 10 nm to about 200 nm. At a thickness less than
about 10 nm, there may be an insufficient amount of the group 10
metal to confer a benefit in some cases. At a thickness greater
than about 200 nm, the bond pad 140 may be too hard to form a
reliable bond thereto. In a non-limiting example, the layer 410 is
Al with a thickness of about 400 nm, and the layer 430 is Pd with a
thickness of about 34 nm. In this case, the bond pad 140 has an
overall concentration of Pd of about 10 wt %.
[0033] In general, it is expected that only a portion of the group
10 metal provided by the layer 430 concentrates in the IMC region
230. Moreover, the IMC region 230 is generally expected to be a
ternary IMC or alloy including Al, Au and the group 10 metal. Thus,
the concentration of the group 10 metal in the IMC region 230 is
expected to be less than 100 wt %. The concentration may be
substantially less, e.g., 20 wt %. The group 10 metal in other
portions of the bond pad 140 is generally expected to be uninvolved
in suppressing voids.
[0034] In some embodiments, the layer 420 has a thickness in a
range of about 10 nm to about 200 nm. In some cases, when the layer
420 has a thickness less than 10 nm, it may be difficult to bond to
the bond pad 140, as the surface may more closely resemble a group
10 metal surface. On the other hand, a thickness of 200 nm is
thought, e.g., to provide sufficient Al to form an Au/Al IMC
region, thus forming a mechanically strong bond between the bond
pad 140 and the wire 150.
[0035] It is thought that an IMC region formed by the wire 150 and
the layer 420 will consume most of the Al therein, thus placing the
IMC region close to or directly contacting the group 10 metal layer
430. In some cases, this configuration is expected to position the
layer 430 relative to the IMC region formed by the wire bond
process such that the group 10 metal may rapidly diffuse to a
location at which it suppresses void formation. On the other hand,
even if the group 10 metal is consumed in the IMC, or if unreacted
Al remains between the IMC layer and the layer 430, embodiments
within the scope of the disclosure are expected to benefit from the
diffusion of the group 10 metal to a location that inhibits void
formation.
[0036] When the group 10 metal is formed as a layer, e.g., the
layer 430, the group 10 metal layer may be formed as a continuous
layer or a discontinuous layer. A continuous layer 430 has no, or
very few, openings therein through which the layer 420 may directly
contact the layer 410. In some cases, the minimum thickness that
results in a continuous layer is used. In some cases, the minimum
thickness is about 10 nm, but may vary depending on the particular
group 10 metal. Below the minimum thickness, a discontinuous layer
430 may result, which may include numerous openings therein, or may
include islands of the group 10 metal. In some embodiments, the
layer 430 is such a discontinuous layer. In such embodiments, the
group 10 metal of the discontinuous layer may diffuse during
operation under the influence of driving forces (e.g., elevated
temperature, bonding stress) to produce a continuous or
discontinuous group 10 metal layer within an Au/Al IMC region,
e.g., formed by the bonding process. Such a layer may be detected
by, e.g., SEM, TEM, EDS, XPS, or similar analytic techniques.
[0037] FIG. 5 illustrates an embodiment generally designated 500 in
which a bond pad 140 includes a layer 510 that is essentially free
of a group 10 metal and a layer 520 that includes a group 10 metal.
The concentration of the group 10 metal decreases with increasing
depth into the layer 520, as qualitatively illustrated by a
concentration profile 530. Such a profile maybe produced, e.g., by
depositing a layer 540 of a group 10 metal onto the surface of the
layer 510 and thermally diffusing the layer 540 into the layer 510.
In the embodiment 500, the upper surface of the layer 520 is an
alloy of Al and the group 10 metal, as distinguished from some
conventional bond pad structures that include an Al-free Pd upper
surface. In some embodiments the concentration of the group 10
metal may be at between about 50 wt % and about 95 wt % at the
surface of the layer 520.
[0038] The layer 540 may be, e.g. less than about 100 nm. In some
cases, the layer 540 is discontinuous, or may be noncontiguous
islands. The group 10 metal may be diffused into the layer 510 at a
temperature close to, but below, the melting point of Al, e.g.,
about 660 C. The bond pad 140 may then be formed by conventional
pattern and etch as described previously. In some cases, etching
the metal stack may be done by employing a multi-step plasma or wet
etch process.
[0039] Alternately, an Al layer over a semiconductor wafer may be
patterned first to form the layer 510. The layer 540 may then be
deposited over the full wafer and diffused into the layer 510,
forming the alloy layer 520 over the layer 510. The undiffused
layer 540 present over the remaining wafer, e.g., the substrate
120, can then be removed in a manner that does not significantly
affect the bond pad 140. In one example, after the group 10 metal
is diffused into the layer 510, the group 10 metal may be removed
by a nonselective process such as a sputter etch or a Ar/SF.sub.6
plasma etch. While some of the bond pad 140 may be removed, the
amount of material lost would not significantly affect the bond pad
140 performance. Moreover, sufficient group 10 metal is expected to
remain in the bond pad 140, conferring the advantages discussed
herein. In another example, a wet etch may be used to remove the
group 10 metal from the substrate 120 after diffusion. A brief etch
in, e.g., 3:1 HNO.sub.3: HCl is expected to remove the thin
undiffused group 10 metal layer, while having a small affect on the
bond pad 140. Those skilled in the art are capable of determining
specific process conditions for the particular group 10 metal and
layer 540 thickness.
[0040] In the embodiment 500, the interface between the layer 520
and the layer 510 may not be distinct. For example, the
concentration of the group 10 metal may smoothly decrease from a
peak concentration at or near the surface of the bond pad 140 with
depth into the bond pad 140. In this case, the thickness of the
layer 520 is regarded as the thickness at which the concentration
of the group 10 metal decreases to about 10% of its peak value in
the layer 520.
[0041] Each of the layers 310, 430, 520 may be viewed as a source
of the group 10 metal to diffuse in the bond pad 140 as the bond
pad 140 ages. It is expected that at operating temperature over the
lifetime of the electronic device 100 the atoms of the group 10
metal will be sufficiently mobile that they will diffuse to the
location within the bond pad 140 that decreases the free energy of
the thermodynamic system of the regions associated with the bond
pad 140 and the wire 150. The concentration of the group 10 metal
is expected to suppress void formation as previously described, but
without the necessity of providing Pd in the wire 150.
[0042] Turning now to FIG. 6, illustrated is a method of the
disclosure, generally designated 600. The method 600 begins with a
step 610, in which an electronic device substrate is provided.
Herein and in the claims, "provided" means that a device,
substrate, structural element, etc., may be manufactured by the
individual or business entity performing the disclosed methods, or
obtained thereby from a source other than the individual or entity,
including another individual or business entity.
[0043] In a step 620, an Al bond pad is placed over the device
substrate. The bond pad may be formed, e.g., in a manner previously
described with respect to the bond pad 140. In a step 630, an
intrinsic group 10 metal is incorporated into the bond pad. The
group 10 metal may have an average concentration in the bond pad in
a range of about 0.1 wt % to about 35 wt %, as previously
described. The layer may be formed such that the surface of the
bond pad has between about 50 wt % and about 95 wt % of the group
10 metal. The group 10 metal may be, e.g., Pd. In some embodiments,
the layer that includes the group 10 metal may be an Al layer,
wherein the Al layer is formed with a homogeneously distributed
concentration of the group 10 metal therein. In other embodiments,
the layer that includes the group 10 metal may be a layer embedded
within the Al bond pad.
[0044] In some embodiments the method 600 continues with a step
640, in which an Au wire is bonded to the Al bond pad. The wire may
be a 4N wire, as previously described. The bonding forms an Au/Al
IMC region between the wire and the bond pad. The IMC region may
optionally contact the peak concentration of the group 10
metal.
[0045] Those skilled in the art to which this application relates
will appreciate that other and further additions, deletions,
substitutions and modifications may be made to the described
embodiments.
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