U.S. patent application number 12/899048 was filed with the patent office on 2011-07-07 for methods and apparatus for tuning matching networks.
This patent application is currently assigned to APPLIED MATERIALS, INC.. Invention is credited to JAMES P. CRUSE, BRYAN LIAO, KARTIK RAMASWAMY, ANDREY SEMENIN, SERGIO F. SHOJI, CHUNLEI ZHANG.
Application Number | 20110162798 12/899048 |
Document ID | / |
Family ID | 43900889 |
Filed Date | 2011-07-07 |
United States Patent
Application |
20110162798 |
Kind Code |
A1 |
ZHANG; CHUNLEI ; et
al. |
July 7, 2011 |
METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS
Abstract
Methods and apparatus for tuning matching networks are provided
herein. A method of tuning a matching network includes providing a
matching network coupling an RF source to a load, the matching
network having a tunable element disposed at a first set point;
increasing a value of the tunable element by a first step above the
first set point; sensing a first adjusted value of a reflected RF
power; decreasing the value of the tunable element by the first
step below the first set point; sensing a second adjusted value of
the reflected RF power; comparing the first and the second adjusted
values of the reflected RF power; and moving the tunable element to
a second set point that corresponds to a position having a lowest
adjusted value of the reflected RF power. The method may be
repeated until the reflected RF power falls within an acceptable
reflected RF power range.
Inventors: |
ZHANG; CHUNLEI; (Santa
Clara, CA) ; SHOJI; SERGIO F.; (San Jose, CA)
; SEMENIN; ANDREY; (Sunnyvale, CA) ; RAMASWAMY;
KARTIK; (San Jose, CA) ; CRUSE; JAMES P.;
(Santa Cruz, CA) ; LIAO; BRYAN; (Saratoga,
CA) |
Assignee: |
APPLIED MATERIALS, INC.
Santa Clara
CA
|
Family ID: |
43900889 |
Appl. No.: |
12/899048 |
Filed: |
October 6, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
61253727 |
Oct 21, 2009 |
|
|
|
Current U.S.
Class: |
156/345.28 ;
333/32 |
Current CPC
Class: |
H03H 7/40 20130101; H05H
1/46 20130101; H01J 37/32183 20130101; H01J 37/32935 20130101 |
Class at
Publication: |
156/345.28 ;
333/32 |
International
Class: |
C23F 1/08 20060101
C23F001/08; H03H 7/38 20060101 H03H007/38 |
Claims
1. A method of tuning a matching network during a plasma process,
comprising: (a) providing a matching network coupling an RF source
to a load, the matching network having a first tunable element
disposed at a first set point; (b) increasing a value of the first
tunable element by a first step above the first set point; (c)
sensing a first adjusted value of a reflected RF power; (d)
decreasing the value of the first tunable element by the first step
below the first set point; (e) sensing a second adjusted value of
the reflected RF power; (f) comparing the first and the second
adjusted values of the reflected RF power; and (g) moving the first
tunable element to a second set point that corresponds to a
position having a lowest adjusted value of the reflected RF
power.
2. The method of claim 1, further comprising: (h) determining that
the first and second adjusted values of the reflected RF power are
not less than an initial reflected RF power corresponding to the
matching network having a first tunable element disposed at the
first set point; (i) increasing the value of the first tunable
element by a second step above the second set point, the second
step having a value less than that of the first step; (j) sensing a
third adjusted value of the reflected RF power; (k) decreasing the
value of the first tunable element by the second step below the
second set point; (l) sensing a fourth adjusted value of the
reflected RF power; and (m) comparing the third and the fourth
adjusted values of the reflected RF power; wherein (h) through (m)
occur between (f) and (g).
3. The method of claim 2, further comprising: determining that the
lowest adjusted value of reflected RF power is within an acceptable
range of reflected RF power; and maintaining the first tunable
element at a position corresponding to the lowest adjusted value of
the reflected RF power.
4. The method of claim 1, further comprising: determining the
lowest adjusted value of reflected RF power is within an acceptable
range of reflected RF power; and maintaining the first tunable
element at a position corresponding to the lowest adjusted value of
the reflected RF power.
5. The method of claim 1, further comprising: (h) determining that
the lowest adjusted value of reflected RF power is not within an
acceptable range of reflected RF power; (i) increasing a value of
the first tunable element by a first step above the first set
point; (j) sensing a first adjusted value of a reflected RF power;
(k) decreasing the value of the first tunable element by the first
step below the first set point; (l) sensing a second adjusted value
of the reflected RF power; (m) comparing the first and the second
adjusted values of the reflected RF power; and (n) moving the first
tunable element to a second set point that corresponds to a
position having a lowest adjusted value of the reflected RF
power.
6. The method of claim 5, further comprising: repeating (h) through
(n) until the lowest adjusted value of reflected RF power is within
an acceptable range of reflected RF power.
7. The method of claim 1, wherein the first tunable elements are
capacitors or capacitive shunts to ground.
8. The method of claim 1, wherein the method further comprises:
performing (a) through (g) for a first matching network coupled to
a first RF source; and repeating (a) through (g) for a second
matching network coupled to a second RF source.
9. The method of claim 1, wherein the matching network further
comprises a second tunable element disposed at a first set point,
and further comprising: (h) increasing a value of the second
tunable element by a second step above the first set point; (i)
sensing a third adjusted value of the reflected RF power; (j)
decreasing the value of the second tunable element by the second
step below the first set point; and (k) sensing a fourth adjusted
value of the reflected RF power; wherein (f) further comprises
comparing the first, second, third, and fourth adjusted values of
the reflected RF power, and wherein (h) through (k) occur prior to
(f) and (g), and wherein (g) further comprises moving either the
first tunable element or the second tunable element to a second set
point that corresponds to a position having a lowest adjusted value
of the reflected RF power.
10. The method of claim 1, wherein the matching network further
comprises a second tunable element disposed at a first set point,
and further comprising: (h) increasing a value of the second
tunable element by a second step above the first set point at the
same time as one of increasing or decreasing the value of the first
tunable element by the first step; (i) decreasing the value of the
second tunable element by the second step below the first set point
while keeping the first tunable element in the same position as in
(h); and (i) sensing a third adjusted value of the reflected RF
power; wherein (f) further comprises comparing the first, second,
and third adjusted values of the reflected RF power, wherein (h)
through (j) occur prior to (f) and (g), and wherein (g) further
comprises moving either or both of the first tunable element or the
second tunable element to a second set point that corresponds to a
position having a lowest adjusted value of the reflected RF
power.
11. A computer readable medium, having instructions stored thereon
which, when executed by a controller, causes the tuning of a match
network by a method, the match network coupling an RF source to a
load and having a tunable element disposed at a first set point,
the method comprising: (a) increasing a value of the tunable
element by a first step above the first set point; (b) sensing a
first adjusted value of a reflected RF power; (c) decreasing the
value of the tunable element by the first step below the first set
point; (d) sensing a second adjusted value of the reflected RF
power; (e) comparing the first and the second adjusted values of
the reflected RF power; and (f) moving the tunable element to a
second set point that corresponds to a position having a lowest
adjusted value of the reflected RF power.
12. The computer readable medium of claim 11, further comprising:
(g) determining that the first and second adjusted values of the
reflected RF power are not less than an initial reflected RF power
corresponding to the matching network having a tunable element
disposed at the first set point; (h) increasing the value of the
tunable element by a second step above the second set point, the
second step having a value less than that of the first step; (i)
sensing a third adjusted value of the reflected RF power; (j)
decreasing the value of the tunable element by the second step
below the second set point; (k) sensing a fourth adjusted value of
the reflected RF power; and (l) comparing the third and the fourth
adjusted values of the reflected RF power; wherein (g) through (l)
occur between (e) and (f).
13. The computer readable medium of claim 12, further comprising:
determining the lowest adjusted value of reflected RF power is
within an acceptable range of reflected power; and maintaining the
tunable element at a position corresponding to the lowest adjusted
value of the reflected RF power.
14. The computer readable medium of claim 11, further comprising:
determining the lowest adjusted value of reflected RF power is
within an acceptable range of reflected power; and maintaining the
tunable element at a position corresponding to the lowest adjusted
value of the reflected RF power.
15. The computer readable medium of claim 11, further comprising:
(g) determining that the lowest adjusted value of reflected RF
power is not within an acceptable range of reflected RF power; (h)
increasing a value of the tunable element by a first step above the
first set point; (i) sensing a first adjusted value of a reflected
RF power; (j) decreasing the value of the tunable element by the
first step below the first set point; (k) sensing a second adjusted
value of the reflected RF power; (l) comparing the first and the
second adjusted values of the reflected RF power; and (m) moving
the tunable element to a second set point that corresponds to a
position having a lowest adjusted value of the reflected RF
power.
16. The computer readable medium of claim 11, wherein the method
further comprises: performing the method a number of times wherein
a first RF source provides power, then performing the method a
number of times wherein a second RF source provides power.
17. The computer readable medium of claim 11, wherein the method
further comprises: performing (a) through (f) for a first matching
network coupled to a first RF source; and repeating (a) through (f)
for a second matching network coupled to a second RF source.
18. The computer readable medium of claim 11, wherein the matching
network further comprises a second tunable element disposed at a
first set point, and further comprising: (g) increasing a value of
the second tunable element by a second step above the first set
point; (h) sensing a third adjusted value of the reflected RF
power; (i) decreasing the value of the second tunable element by
the second step below the first set point; and (j) sensing a fourth
adjusted value of the reflected RF power; wherein (e) further
comprises comparing the first, second, third, and fourth adjusted
values of the reflected RF power, and wherein (g) through (j) occur
prior to (e) and (f).
19. The computer readable medium of claim 11, wherein the matching
network further comprises a second tunable element disposed at a
first set point, and further comprising: (g) increasing a value of
the second tunable element by a second step above the first set
point at the same time as one of increasing or decreasing the value
of the tunable element by the first step; (h) decreasing the value
of the second tunable element by the second step below the first
set point while keeping the tunable element in the same position as
in (h); and (i) sensing a third adjusted value of the reflected RF
power; wherein (e) further comprises comparing the first, second,
and third adjusted values of the reflected RF power, and wherein
(g) through (i) occur prior to (e) and (f).
20. A system for plasma processing of a substrate, comprising: a
process chamber for processing a substrate; a first RF source
coupled to the process chamber through a first matching network
coupled; a second RF source coupled to the process chamber through
a second matching network; and a controller comprising computer
readable medium having instructions stored thereon that, when
executed, cause the controller to tune the first matching network
and the second matching network to a load during a plasma process,
wherein the first matching network coupled the first RF source to
the load and includes a first tunable element disposed at a first
set point, and wherein the method comprises: (a) increasing a value
of the first tunable element by a first step above the first set
point; (b) sensing a first adjusted value of a reflected RF power;
(c) decreasing the value of the first tunable element by the first
step below the first set point; (d) sensing a second adjusted value
of the reflected RF power; (e) comparing the first and the second
adjusted values of the reflected RF power; and (f) moving the first
tunable element to a second set point that corresponds to a
position having a lowest adjusted value of the reflected RF power.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application claims benefit of U.S. provisional patent
application Ser. No. 61/253,727, filed Oct. 21, 2009, which is
herein incorporated by reference.
BACKGROUND
[0002] 1. Field
[0003] The present invention generally relates to substrate process
chambers and, more particularly, to tuning matching networks to
match the impedance of a plurality of RF sources to a load within a
substrate process chamber.
[0004] 2. Description of the Related Art
[0005] Plasma enhanced substrate process chambers are widely used
in the manufacture of integrated devices. In some plasma enhanced
substrate process chambers, multiple radio frequency (RF)
generators may be utilized to form and control the plasma. Each
generator is connected to the substrate process chamber through a
matching network. The matching network may be manually tuned and
balanced for the percentage of power supplied by each generator. As
a result of the manual tuning, significant trial and error
substrate runs may be needed to further tune the match to minimize
the reflected power. This manual trial and error process generally
continues throughout processing to account for any drift in the
chamber conditions. The currently used manual tuning is a slow and
tedious process, reducing the efficiency of substrate
processing.
[0006] Thus, the inventors have provided an improved method for
tuning matching networks in substrate process chambers.
SUMMARY
[0007] Methods and apparatus for tuning a matching network are
provided herein. In some embodiments, a method of tuning a matching
network includes providing a matching network coupling an RF source
to a load, the matching network having a tunable element disposed
at a first set point. The value of the tunable element may be
increased by a first step above the first set point. A first
adjusted value of a reflected RF power is then read. The value of
the tunable element is then decreased by the first step below the
first set point and a second adjusted value of the reflected RF
power is read. The first and the second adjusted values of the
reflected RF power are compared and if the lowest adjusted value is
lower than the initial read reflected RF power the tunable element
is adjusted to a second set point that corresponds to a position
having a lowest adjusted value of the reflected RF power. If the
lowest adjusted value of the reflected RF power is not lower than
the initial read reflected RF power the tuning method is repeated
using a smaller step size. The method of tuning a matching network
may be repeated until the reflected RF power falls within an
acceptable reflected RF power range.
[0008] In some embodiments, a method of tuning a matching network
includes a computer readable medium having instructions stored
thereon which, when executed by a controller, causes the tuning of
a match network by a method, wherein the matching network includes
coupling an RF source to a load, the matching network having a
tunable element disposed at a first set point. The value of the
tunable element may be increased by a first step above the first
set point. A first adjusted value of a reflected RF power is then
read. The value of the tunable element is then decreased by the
first step below the first set point and a second adjusted value of
the reflected RF power is read. The first and the second adjusted
values of the reflected RF power are compared and if the lowest
adjusted value is lower than the initial read reflected RF power
the tunable element is adjusted to a second set point that
corresponds to a position having a lowest adjusted value of the
reflected RF power. If the lowest adjusted value of the reflected
RF power is not lower than the initial read reflected RF power the
tuning method is repeated using a smaller step size. The method of
tuning a matching network may be repeated until the reflected RF
power falls within an acceptable reflected RF power range.
[0009] In some embodiments, a system for plasma processing of a
substrate may include a process chamber for processing a substrate;
a first RF source coupled to the process chamber through a first
matching network coupled; a second RF source coupled to the process
chamber through a second matching network; and a controller
comprising computer readable medium having instructions stored
thereon that, when executed, cause the controller to tune the first
matching network and the second matching network to a load during a
plasma process, wherein the first matching network coupled the
first RF source to the load and includes a first tunable element
disposed at a first set point. In some embodiments, the method of
tuning the first matching network and the second matching network
to the load during the plasma process may include (a) increasing a
value of the first tunable element by a first step above the first
set point; (b) sensing a first adjusted value of a reflected RF
power; (c) decreasing the value of the first tunable element by the
first step below the first set point; (d) sensing a second adjusted
value of the reflected RF power; (e) comparing the first and the
second adjusted values of the reflected RF power; and (f) moving
the first tunable element to a second set point that corresponds to
a position having a lowest adjusted value of the reflected RF
power. The method may further include any of the other embodiments
and variations disclosed herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] So that the manner in which the above summarized features of
the present invention can be understood in detail, a more
particular description of the invention may be had by reference to
embodiments, some of which are illustrated in the appended
drawings. It is to be noted, however, that the appended drawings
illustrate only typical embodiments of the invention and are
therefore not to be considered limiting of its scope, for the
invention may admit to other equally effective embodiments.
[0011] FIG. 1 depicts an apparatus suitable for processing of
substrates in accordance with some embodiments of the present
invention.
[0012] FIGS. 2-2A depict a schematic diagram of an illustrative
matching network used in accordance with some embodiments of the
present invention.
[0013] FIGS. 3-6 depict methods of tuning a matching network in
accordance with some embodiments of the present invention.
[0014] The figures are not drawn to scale and may be simplified for
clarity. It is contemplated that elements and features of one
embodiment may be beneficially incorporated in other embodiments
without further recitation.
DETAILED DESCRIPTION
[0015] Embodiments of the present invention generally relate to
methods of tuning matching networks. The inventive methods may
advantageously increase productivity and efficiency of operating
substrate process chambers by providing stable temperatures and
stable output of power sources.
[0016] FIG. 1 depicts an apparatus suitable for a processing of
substrates in accordance with some embodiments of the present
invention. For example, FIG. 1 depicts a plasma enhanced substrate
process system 100 that may be used, for example, for etching
substrates 122 (or other work pieces). Although the disclosed
embodiment of the invention is described in the context of a
substrate process chamber used for etching, the invention is
generally applicable to any form of plasma process that uses RF
power delivered through a tunable matching network during a plasma
enhanced process. Such reactors and/or processes include plasma
annealing, plasma enhanced chemical vapor deposition, physical
vapor deposition, plasma cleaning, and the like. Exemplary process
chambers may include the DPS.RTM., ENABLER.RTM., ADVANTEDGE.TM., or
other process chambers, available from Applied Materials, Inc. of
Santa Clara, Calif. It is contemplated that other suitable chambers
that utilize plasma processing may benefit from the inventive
methods disclosed herein.
[0017] This illustrative substrate process system 100 comprises a
substrate process chamber 101, a process gas supply 126, a
controller 114, a first RF source 112, a second RF source 116, a
first matching network 110, and a second matching network 118.
Either or both of the first and second RF sources 112, 116 may be
configured for fast frequency tuning (e.g., the source may be able
to vary frequency within about +/-5 percent in response to a sensed
reflected power measurement in order to minimize reflected power).
Such frequency tuning may require about 100 micro-seconds or much
less to minimize the reflected power from a plasma in a given
steady state.
[0018] The substrate process chamber 101 comprises a vacuum vessel
102 that contains a cathode pedestal 120 that forms a pedestal for
a substrate 122. The roof or lid 103 of the process chamber has at
least one antenna assembly 104 proximate the roof 103. The antenna
assembly 104 may comprise a pair of antennas 106 and 108.
Generally, one or more antennas or an electrode in combination or
in lieu of an antenna may be used to couple RF energy to a plasma.
In this particular illustrative embodiment, the antennas 106 and
108 inductively couple energy to the process gas or gases supplied
by the process gas supply 126 to the interior of the vacuum vessel
102. The RF energy supplied by the antennas 106 and 108 is
inductively coupled to the process gases to form a plasma 124 in a
reaction zone above the substrate 122. The reactive gases formed by
the plasma may, for example, etch the materials on the substrate
122 (although as discussed above other plasma processes may benefit
from the invention disclosed herein).
[0019] In some embodiments, the power to the antenna assembly 104
ignites the plasma 124 and power coupled to the cathode pedestal
120 controls the plasma 124. As such, RF energy is coupled to both
the antenna assembly 104 and the cathode pedestal 120. The first RF
source 112 supplies energy to the first matching network 110 which
couples the RF energy to the antenna assembly 104. Similarly, the
second RF source 116 couples energy to the second matching network
118 which couples energy to the cathode pedestal 120. A controller
114 controls the timing of activating and deactivating the first
and second RF sources 112 and 116 as well as tuning the first and
second matching networks 110 and 118. The power coupled to the
antenna assembly 104 is known as the source power and the power
coupled to the cathode pedestal 120 is known as the bias power. In
the embodiments of the invention, the source power, the bias power,
or both can be operated in either a continuous wave (CW) mode or a
pulsed mode.
[0020] A first indicator device 150 and a second indicator device
152 are used to determine the effectiveness of the ability of the
matching networks 110, 118 to match to the plasma 124. In some
embodiments, the indicator devices 150 and 152 monitor the power
that is reflected from the respective matching networks 110, 118.
These devices are generally integrated into the matching networks
110, 118, or power sources 112, 116; however, for descriptive
purposes, they are shown here as being separate from the matching
networks 110, 118. When reflected power is used as the indicator,
the indicator devices 150 and 152 are respectively coupled between
the power sources 112 and 116 and the matching networks 110 and
118. To produce a signal indicative of reflected power, the
indicator devices 150 and 152 are directional couplers coupled to a
RF detector such that the match effectiveness indicator signal is a
voltage that represents the magnitude of the reflected power. A
large reflected power is indicative of an unmatched situation. The
signals produced by the indicator devices 150 and 152 are coupled
to the controller 114. In response to an indicator signal, the
controller 114 produces a tuning signal (matching network control
signal) that is coupled to the matching networks 110, 118. This
signal is used to tune the matching networks 110, 118. The tuning
process strives to minimize or achieve a particular level of, for
example, reflected power as represented in the indicator signal.
The matching networks 110, 118 typically may require between about
100 microseconds to about a few milliseconds to minimize reflected
power from a plasma in a given steady state.
[0021] FIG. 2 depicts a schematic diagram of an illustrative
matching network that may be used in accordance with some
embodiments of the present invention. Specifically, FIG. 2 depicts
a schematic diagram of an illustrative system 200 including a
matching network used, for example, as the first RF matching
network 110. This particular embodiment depicts a power source 202,
a sensor 204, a matching circuit 210, a load 206, and a ground 208.
In some embodiments, the load 206 may be the plasma 124 formed in
the chamber 102. The matching circuit 210 is formed by capacitors,
C.sub.1 and C.sub.2, and an inductor, L.sub.1. The values of
capacitor C.sub.1 may be electronically or mechanically tuned to
adjust the matching of the network 110. In lower power systems, the
capacitor C.sub.1 may be electronically tuned rather than
mechanically tuned. In some embodiments, the matching circuit 210
may have a tunable inductor. In some embodiments, for example as
depicted in FIG. 2A, the fixed capacitor C.sub.2 may be replaced
with a variable capacitor C.sub.3, which may be electronically or
mechanically tuned to adjust the matching of the network 110 in a
similar manner as capacitor C.sub.1. In some embodiments, the
matching circuit 210 may have a capacitive shunt to ground. The
power source 202 may be, for example, the first or second RF source
112 or 116 described above with respect to FIG. 1, and may operated
in pulse or CW mode. The power source 202 that is matched by the
network 210 provides power at an illustrative frequency of about 2
MHZ or about 13.56 MHz and has an illustrative power level of up to
about 8000 Watts. The above described matching networks are
illustrative only and other various configurations of matching
networks having one or more adjustable elements for tuning the
matching network may be utilized and tuned in accordance with the
teachings provided herein.
[0022] Returning to FIG. 1, the controller 114 comprises a central
processing unit (CPU) 130, a memory 132 and support circuits 134.
The controller 114 is coupled to various components of the system
100 to facilitate control of the process. The controller 114
regulates and monitors processing in the chamber via interfaces
that can be broadly described as analog, digital, wire, wireless,
optical, and fiber optic interfaces. To facilitate control of the
chamber as described below, the CPU 130 may be one of any form of
general purpose computer processor that can be used in an
industrial setting for controlling various chambers and sub
processors. The memory 132 is coupled to the CPU 130. The memory
132, or a computer readable medium, may be one or more readily
available memory devices such as random access memory, read only
memory, floppy disk, hard disk, or any other form of digital
storage either local or remote. The support circuits 134 are
coupled to the CPU 130 for supporting the processor in a
conventional manner. These circuits include cache, power supplies,
clock circuits, input/output circuitry and related subsystems, and
the like.
[0023] Process instructions are generally stored in the memory 132
as a software routine typically known as a recipe. The software
routine may also be stored and/or executed by a second CPU (not
shown) that is remotely located from the hardware being controlled
by the CPU 130. The software routine, when executed by CPU 130,
transforms the general purpose computer into a specific purpose
computer (controller) 114 that controls the system operation such
as that for controlling the plasma during the substrate process.
Although the process of the present invention is discussed as being
implemented as a software routine, some of the method steps that
are disclosed therein may be performed in hardware as well as by
the software controller. As such, the invention may be implemented
in software as executed upon a computer system, and hardware as an
application specific integrated circuit or other type of hardware
implementation, or a combination of software and hardware.
[0024] Conventional matching networks and generators typically each
contain control algorithms used for tuning the respective systems
that are independent. Accordingly, each algorithm is not linked to
the other with respect to the time or manner in which they both
should be aiming to reduce the reflected power to the generator.
The lack of such a link might cause a significant competition
between the various tuning algorithms, and therefore, might cause
system instabilities. In order to overcome this problem, methods
for tuning a matching network are provided that advantageously
facilitates the independent matching networks to make adjustments
relative to and in response to the other matching networks, thus
reducing competition between the matching networks, and thus,
promoting improved overall system stability.
[0025] For example, FIG. 3 depicts a method 300 of tuning a
matching network in accordance with some embodiments of the present
invention. The method 300 may be performed, for example, with the
illustrative apparatus disclosed in FIGS. 1 and 2, above. The
method 300 generally begins at 302, where an initial reflected RF
power is read. Next, at 304, a query is made as to whether the
initial reflected RF power is within a predetermined acceptable
range. If the initial reflected RF power is within the acceptable
range the method proceeds to 322, where the tuning ends. If the
initial reflected RF power is not within the acceptable range, the
method progresses to 306, where the RF match is tuned.
[0026] At 306, the RF match is tuned. The process for tuning the RF
match begins at 308, where a tunable element of the match network
is adjusted by increasing its value by a predetermined step size
from an initial set point. The type of tunable element depends upon
the configuration of the particular RF match network being used. A
first adjusted reflected RF power is then read at 310. Next, at
312, the tunable element is again adjusted by decreasing its value
by the predetermined step size from the initial point. A second
adjusted power is then read at 314. The adjustment steps to obtain
the adjusted reflected RF power measurements may occur in either
order. In some embodiments, a period of time may lapse between the
adjustment of the tunable element and the reading of the adjusted
reflected RF power, such as between 308 and 310, or between 312 and
314, to allow for stabilization of the system. This time period may
vary with respect to the particular process conditions, system
being utilized, process performed, etc. For example, a pause of up
to about 100 microseconds, or up to about a few milliseconds, or up
to about 100 ms, or up to about 2 seconds, or more, may be used to
allow the system to stabilize and provide accurate data with regard
to the reflected power.
[0027] Next at 316 a query is made as to whether at least one of
the first and second adjusted reflected powers is less than the
initial reflected RF power.
[0028] If that query is answered in the affirmative the method
proceeds to 320 where the tunable element is adjusted to the
position corresponding to the lowest reflected RF power. The method
then returns to 304 where a query is made as to whether the
reflected RF power determined in 316 and 320 is within the
acceptable range. If the reflected power is within the acceptable
range the tuning ends at 322 and the method stops. If it is not
within the acceptable range the method of tuning the RF match
repeats at 306. This method continues until the reflected RF power
falls within the acceptable range. By tuning to within an
acceptable range, the stability of the system may be increased by
not attempting to further adjust the matching networks (which then
alters the plasma conditions in the chamber) so long as the
reflected power is within the acceptable range.
[0029] If the query at 316 is answered in the negative the method
proceeds to 318, where the step size for adjusting the tunable
element is reduced and the method to tune RF match 306 is repeated
using the reduced step size.
[0030] In embodiments where the matching network comprises more
than one tunable element, the above methodology may be applied to
each of the tunable elements to rapidly tune the matching network
to an acceptable state. For example, a variation of the tuning
method described above at 306 is shown in FIG. 4 for a matching
network having two tuning elements (e.g., a first tunable element
and a second tunable element).
[0031] In some embodiments, in addition to increasing and
decreasing the value of the first tunable element, as described
above at 308-314, the second tunable element may also be similarly
adjusted and the reflected RF power measured. For example, at 402
the value of the second tunable element may be increased by a
second step from an initial set point. The second step may be the
same or different in magnitude than the first step. Next, at 404, a
third adjusted reflected RF power may be read. At 406, the value of
the second tunable element may be decreased by the second step from
the initial set point and, at 408, a fourth adjusted reflected RF
power may be read. The third and fourth adjusted reflected RF
powers may be read in the same manner as described above with
respect to the first and second adjusted reflected RF powers.
[0032] The comparison of the adjusted reflected RF powers described
above at 316 will encompass comparison of all adjusted reflected RF
powers (e.g., the first, second, third, and fourth, etc.) to
identify the position of the first and second tunable elements that
has the lowest reflected RF power. As discussed above, if the
lowest reflected RF power is present at the initial position of
each of the tunable elements, the tuning method continues with
reduced step sizes for each of the first and second steps. If the
lowest reflected RF power is present at an adjusted position of one
of the tunable elements, then moving the tunable element to the
position corresponding to the lowest reflected RF power (discussed
at 320, above) refers to the moving either the first or the second
tunable element, as appropriate.
[0033] In another example, a variation of the tuning method
described above at 306 is shown in FIG. 5 for a matching network
having two tuning elements (e.g., a first tunable element and a
second tunable element). In some embodiments, the method begins
similarly as described above at 308-310, where a value of the first
tunable element is increased by a first step from an initial set
point (at 502) and a first adjusted reflected RF power is read (at
504).
[0034] Next, at 506, The value of the first tunable element may be
decreased by the first step from the initial set point. At 508, the
value of the second tunable element may be increased by a second
step from an initial set point while the first tunable element is
held at the decreased set point. As above, the second step may be
the same or different in magnitude as the first step. Next, at 510,
a second adjusted reflected RF power may be read. At 512, the value
of the second tunable element may be decreased by the second step
from the initial set point while the first tunable element is still
held at the decreased set point. Next, at 514 a third adjusted
reflected RF power may be read.
[0035] Alternatively, the value of the first tunable element may be
decreased and the first reflected RF power read, with the movement
of the second tunable element as described above performed in
conjunction with increasing the first tunable element to obtain the
second and third adjusted reflected RF powers.
[0036] The comparison of the adjusted reflected RF powers described
above at 316 will encompass comparison of all adjusted reflected RF
powers (e.g., the first, second, and third) to identify the
position of the first and second tunable elements that has the
lowest reflected RF power. As discussed above, if the lowest
reflected RF power is present at the initial position of each of
the tunable elements, the tuning method continues with reduced step
sizes for each of the first and second steps. If the lowest
reflected RF power is present at an adjusted position of one or
both of the tunable elements, then moving the tunable element to
the position corresponding to the lowest reflected RF power
(discussed at 320, above) refers to the moving either or both of
the first or the second tunable element, as appropriate.
[0037] The above tuning methods may be utilized to tune one or a
plurality of matching networks in a processing system. In
embodiments where a plurality of matching networks are provided,
each matching network may be tuned using the above method. In some
embodiments, one matching network may be tuned while all other
matching networks are held constant. For example, FIG. 6 depicts a
method 600 of tuning a plurality of match networks in accordance
with some embodiments of the present invention. In some
embodiments, one or more iterations of the above method may be run
on a first match network while maintaining the other matching
networks in a fixed mode (as shown at 602), then (regardless of
whether the matching network provides an acceptable reflected power
range) one or more iterations of the above method may be run on a
second matching network while maintaining the other matching
networks in a fixed mode (as shown at 604). This sequence may be
continued for any number of matching networks coupled to the
process chamber during the plasma process. At 606, a query is made
to determine whether the reflected RF power for any one or more of
the matching networks is within an acceptable range. For each
matching network that provides an acceptable reflected RF power,
the method ends (as depicted at 610). For any matching network that
continues to provide an unacceptable reflected RF power, the method
may continue by repeating the tuning adjustment process as
discussed above for the respective matching networks that require
further tuning (as depicted at 608).
[0038] Tuning a plurality of matching networks in this manner
advantageously facilitates more rapid plasma stabilization and
match network tuning without interference resultant from concurrent
tuning of other matching networks in the system. Moreover, by
cycling through the matching networks using only limited iterations
of the tuning methodology, large changes in one matching network
relative to the other matching networks is avoided, further
facilitating stable plasma processing and rapid tuning to an
acceptable low reflected power state.
[0039] While the foregoing is directed to embodiments of the
present invention, other and further embodiments of the invention
may be devised without departing from the basic scope thereof.
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