U.S. patent application number 12/636582 was filed with the patent office on 2011-06-16 for ultra low silicon loss high dose implant strip.
Invention is credited to David Cheung, Haoquan Fang, Anirban Guha, Ilia Kalinovski, Jack Kuo, Ted Li, Kirk Ostrowski, Andrew Yao.
Application Number | 20110143548 12/636582 |
Document ID | / |
Family ID | 44143417 |
Filed Date | 2011-06-16 |
United States Patent
Application |
20110143548 |
Kind Code |
A1 |
Cheung; David ; et
al. |
June 16, 2011 |
ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP
Abstract
Improved methods for stripping photoresist and removing ion
implant related residues from a work piece surface are provided.
According to various embodiments, plasma is generated using
elemental hydrogen, a fluorine-containing gas and a protectant gas.
The plasma-activated gases reacts with the high-dose implant
resist, removing both the crust and bulk resist layers, while
simultaneously protecting exposed portions of the work piece
surface. The work piece surface is substantially residue free with
low silicon loss.
Inventors: |
Cheung; David; (Foster City,
CA) ; Fang; Haoquan; (Sunnyvale, CA) ; Kuo;
Jack; (Pleasanton, CA) ; Kalinovski; Ilia;
(Berkeley, CA) ; Li; Ted; (Sunnyvale, CA) ;
Yao; Andrew; (San Jose, CA) ; Guha; Anirban;
(Milpitas, CA) ; Ostrowski; Kirk; (San Jose,
CA) |
Family ID: |
44143417 |
Appl. No.: |
12/636582 |
Filed: |
December 11, 2009 |
Current U.S.
Class: |
438/714 ;
156/345.24; 257/E21.218; 438/725 |
Current CPC
Class: |
G03F 7/427 20130101;
H01L 21/31138 20130101; H01L 21/31116 20130101; H01L 21/32136
20130101; H01L 21/31144 20130101; H01L 21/32139 20130101; H01L
21/32137 20130101 |
Class at
Publication: |
438/714 ;
438/725; 156/345.24; 257/E21.218 |
International
Class: |
H01L 21/3065 20060101
H01L021/3065; C23F 1/08 20060101 C23F001/08 |
Claims
1. A method of removing material from a work piece surface in a
reaction chamber, the method comprising: forming a first plasma
from a process gas mixture comprising molecular hydrogen, a
non-carbon-containing fluorine-containing gas and a fluorocarbon
protectant compound, wherein said non-carbon-containing
fluorine-containing gas and said fluorocarbon protectant compound
are provided in a first volumetric flow ratio; exposing the work
piece surface to the first plasma to thereby remove a first portion
of material from the work piece surface; changing the volumetric
flow ratio of said non-carbon-containing fluorine-containing gas
and said fluorocarbon protectant compound to form a second plasma;
and exposing the work piece surface to the second plasma to thereby
remove a second portion of material from the work piece
surface.
2. The method of claim 1, wherein the fluorocarbon protectant
compound is one of CF.sub.4, C.sub.2F.sub.6, CHF.sub.3,
CH.sub.2F.sub.2, C.sub.3F.sub.8.
3. The method of claim 2 wherein the fluorocarbon protectant
compound is CF.sub.4.
4. The method of claim 1 wherein the non-carbon-containing
fluorine-containing gas is one of NF.sub.3, F.sub.2, HF or
SF.sub.6.
5. The method of claim 1 wherein the non-carbon-containing
fluorine-containing gas is NF.sub.3.
6. The method of claim 1, wherein the material removed from the
work piece surface comprises a high-dose implanted resist.
7. The method of claim 1, wherein the first volumetric flow ratio
of said non-carbon-containing fluorine-containing gas and said
fluorocarbon protectant compound is between about 1:20-1:5 and
changing the volumetric flow ratio comprises changing the ratio to
between about 1:4-1:2.
8. The method of claim 1, wherein the first volumetric flow ratio
of the non-carbon-containing fluorine-containing gas and said
fluorocarbon protectant compound is between about 1:20-1:5.
9. The method of claim 1, wherein changing the volumetric flow
ratio of said non-carbon-containing fluorine-containing gas and
said fluorocarbon protectant compound to form a second plasma
comprises shutting off a flow of the fluorocarbon protectant
compound.
10. The method of claim 1 wherein the process gas mixture further
comprises carbon dioxide.
11. The method of claim 1, wherein the work piece is substantially
residue free of the high-dose implanted resist after removal and
wherein less than about 2 angstroms silicon is lost from a silicon
surface of the work piece.
12. The method of claim 1, wherein the work piece is substantially
residue free of the high-dose implanted resist after removal and
wherein less than about 1 angstrom silicon is lost from a silicon
surface of the work piece.
13. A method of removing material from a work piece surface in a
reaction chamber, the method comprising: forming a first plasma
from a process gas mixture comprising molecular hydrogen,
non-carbon-containing fluorine-containing gas and a fluorocarbon
protectant compound, and exposing the work piece surface to the
first plasma to thereby remove a first portion of material from the
work piece surface and simultaneously form a protective layer on a
silicon-containing surface of the workpiece.
14. The method of claim 13, wherein the fluorocarbon protectant
compound is one of CF.sub.4, C.sub.2F.sub.6, CHF.sub.3,
CH.sub.2F.sub.2, C.sub.3F.sub.8.
15. The method of claim 13, wherein the non-carbon-containing
fluorine-containing gas is one of NF3, F.sub.2, HF or SF.sub.6.
16. The method of claim 13, wherein the fluorocarbon protectant
compound is CF.sub.4 and the non-carbon-containing
fluorine-containing gas is NF.sub.3.
17. The method of claim 13, wherein the process gas mixture further
comprises carbon dioxide.
18. The method of claim 13, wherein the work piece is substantially
residue free of the high-dose implanted resist after removal and
wherein less than about 2 angstroms silicon is lost from a silicon
surface of the work piece.
19. The method of claim 13, wherein the work piece is substantially
residue free of the high-dose implanted resist after removal and
wherein less than about 1 angstrom silicon is lost from a silicon
surface of the work piece.
20. A method of removing high-dose implanted resist from a work
piece surface in a reaction chamber, the method comprising:
removing a first portion of the material comprising: introducing a
first gas comprising molecular hydrogen, a weak oxidizing agent, a
non-carbon-containing fluorine containing gas and a fluorocarbon
protectant gas into a plasma source; generating a first plasma from
the first gas introduced into the plasma source; and exposing the
workpiece to a first plasma to remove a first portion of the
material; and removing a second portion of the material comprising:
introducing a second gas comprising molecular hydrogen, a weak
oxidizing agent, a non-carbon-containing fluorine containing gas
and essentially no fluorocarbon protectant gas into a plasma
source; generating a second plasma from the second gas introduced
into the plasma source; and exposing the workpiece to second plasma
to remove a second portion of the material.
21. An apparatus for removing material from a work piece surface
comprising: a reaction chamber comprising a plasma source, a
showerhead positioned downstream of the plasma source, and a work
piece support downstream of the showerhead, said work piece support
comprising a pedestal and temperature-controlling mechanism to
control a temperature of a work piece supported on the work piece
support; and, a controller for executing a set of instructions,
said set of instruction comprising instructions to form a first
plasma from a process gas mixture comprising molecular hydrogen,
non-carbon-containing fluorine-containing gas and a fluorocarbon
protectant compound, wherein said non-carbon-containing
fluorine-containing gas and said fluorocarbon protectant compound
are provided in a first volumetric flow ratio; expose the work
piece surface to the first plasma to thereby remove a first portion
of material from the work piece surface; change the volumetric flow
ratio of said non-carbon-containing fluorine-containing gas and
said fluorocarbon protectant compound to form a second plasma; and
expose the work piece surface to the second plasma to thereby
remove a second portion of material from the work piece surface.
Description
FIELD OF INVENTION
[0001] The present invention pertains to methods and apparatuses to
remove or strip photoresist material and removing related residues
from a work piece surface. In certain embodiments, this application
relates to methods and apparatus for stripping resist after ion
implant or plasma assisting doping implant (low dose or high-dose
implanted resist).
BACKGROUND
[0002] Photoresist is a light sensitive material used in certain
fabrication processes to form a patterned coating on a work piece,
e.g., a semiconductor wafer, during processing. After exposing the
photoresist coated surface to a pattern of high energy radiation, a
portion of the photoresist is removed to reveal the surface below,
leaving the rest of the surface protected. Semiconductor processes
such as etching, depositing, and ion implanting are performed on
the uncovered surface and the remaining photoresist. After
performing one or more semiconductor processes, the remaining
photoresist is removed in a strip operation.
[0003] During ion implantation, dopant ions, e.g., ions of boron,
boron difluoride, indium, gallium, thallium, phosphorous, arsenic,
antimony, bismuth, or germanium, are accelerated toward a work
piece target. The ions implant in exposed regions of the work piece
as well as in the remaining photoresist surface. The process may
form well regions (source/drain) and lightly doped drain (LDD) and
doubled diffused drain (DDD) regions. The ion implant impregnates
the resist with the implant species and depletes the surface of
hydrogen. The outer layer or crust of the resist forms a carbonized
layer that may be much denser than the underlying bulk resist
layer. These two layers have different thermal expansion rates and
react to stripping processes at different rates.
[0004] The difference between the outer layer and bulk layer is
quite pronounced in post high-dose ion implant resist. In high-dose
implantation, the ion dose may be greater than 1.times.10.sup.15
ions/cm.sup.2 and the energy may be from 10 Kev to greater than 100
keV. Traditional high dose implantation strip (HDIS) processes
employ oxygen chemistries where monatomic oxygen plasma is formed
away from the process chamber and then directed at the work piece
surface. The reactive oxygen combines with the photoresist to form
gaseous by-products which is removed with a vacuum pump. For HDIS,
additional gases are needed to remove the implanted dopants with
oxygen.
[0005] Primary HDIS considerations include strip rate, amount of
residue, and film loss of the exposed and underlying film layer.
Residues are commonly found on the substrate surface after HDIS and
stripping. They may result from sputtering during the high-energy
implant, incomplete removal of crust, and/or oxidation of implant
atoms in the resist. After stripping, the surface should be residue
free or substantially residue free to ensure high yield and
eliminate the need for additional residue removal processing.
Residues may be removed by overstripping, i.e., a continuation of
the strip process past the point nominally required to remove all
photoresist. Unfortunately, in conventional HDIS operations,
overstripping sometimes removes some of the underlying functional
device structure. At the device layer, even very little silicon
loss from the transistor source/drain regions may adversely affect
device performance and yield, especially for ultra shallow junction
devices fabricated at the <32 nm design rule or below.
[0006] What is needed therefore are improved methods and apparatus
for stripping photoresist and ion implant related residues,
especially for HDIS, which minimizes silicon loss and leaves little
or no residue while maintaining an acceptable strip rate.
SUMMARY OF THE INVENTION
[0007] Improved methods for stripping photoresist and removing ion
implant related residues from a work piece surface are provided.
According to various embodiments, plasma is generated using
elemental hydrogen, a fluorine-containing gas and a protectant gas.
The plasma-activated gases reacts with the high-dose implant
resist, removing both the crust and bulk resist layers, while
simultaneously protecting exposed portions of the work piece
surface. The work piece surface is left substantially residue free
with low silicon loss.
[0008] These and other features and advantages of the present
invention will be described in more detail below with reference to
the associated drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] FIGS. 1A-1D depict various stages of semiconductor device
fabrication before and after ion implantation and stripping
operations.
[0010] FIGS. 2A-2D depict various stages of semiconductor device
fabrication before and after ion implantation and stripping
operations according to certain embodiments in which the device
includes a metal gate.
[0011] FIG. 3A shows residue remaining as functions of NF3 flow
rate and CF4 flow rate.
[0012] FIG. 3B shows silicon loss as functions of NF3 flow rate and
CF4 flow rate.
[0013] FIGS. 4 and 5 are a process flow diagrams showing various
operations in accordance with certain embodiments of the present
invention.
[0014] FIG. 6 shows silicon loss as a function of CO2 flow
rate.
[0015] FIG. 7 shows a multi-station sequential architecture
suitable for implementing aspects of the present invention.
[0016] FIG. 8 is a schematic illustration showing an apparatus
suitable for implementing aspects of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Introduction
[0017] In the following detailed description of the present
invention, numerous specific embodiments are set forth in order to
provide a thorough understanding of the invention. However, as will
be apparent to those skilled in the art, the present invention may
be practiced without these specific details or by using alternate
elements or processes. In other instances well-known processes,
procedures and components have not been described in detail so as
not to unnecessarily obscure aspects of the present invention.
[0018] In this application, the terms "work piece", "semiconductor
wafer", "wafer" and "partially fabricated integrated circuit" will
be used interchangeably. One skilled in the art would understand
that the term "partially fabricated integrated circuit" can refer
to a silicon wafer during any of many stages of integrated circuit
fabrication thereon. The following detailed description assumes the
invention is implemented on a wafer. However, the invention is not
so limited. The work piece may be of various shapes, sizes, and
materials. In addition to semiconductor wafers, other work pieces
that may take advantage of this invention include various articles
such as displays, printed circuit boards, and the like.
[0019] As mentioned previously, the methods and apparatus of the
invention may be used to efficiently and effectively to remove
photoresist materials after high-dose ion implantation. The
invention is not limited to high-dose implant strip (HDIS). The
invention is also not limited to any particular category of dopants
implanted. For instance, described methods and apparatus may be
effectively used with stripping after medium or low dose implant.
Although specific dopant ions such as boron, arsenic, and
phosphorous are discussed, the described methods and apparatus may
be effectively used to strip resist impregnated with other dopants,
such as nitrogen, oxygen, carbon, germanium, and aluminum.
[0020] The methods and apparatus of the present invention use
plasmas that are produced from gases that contain hydrogen. In
certain embodiments, the gases also contain a weak oxidizing agent,
a fluorine-containing gas and a protectant gas, such as CF.sub.4.
One skilled in the art will recognize that the actual species
present in the plasma may be a mixture of different ions, radicals,
and molecules derived from the hydrogen, weak oxidizing agent,
fluorine containing gas and protectant gas. It is noted that other
species may be present in the reaction chamber, such as small
hydrocarbons, carbon dioxide, water vapor and other volatile
components as the plasma reacts with and breaks down the organic
photoresist and other residues. One of skill in the art will also
recognize that the initial gas/gases introduced into the plasma
is/are often different from the gas/gases that exist in the plasma
as well as the gas/gases contact the work piece surface during
strip.
[0021] FIG. 1A to 1D depicts various stages of semiconductor
fabrication before and after ion implantation and stripping
operations. FIG. 1A shows a semiconductor substrate 101 coated with
photoresist material 103. The substrate 101 may include one or more
layers of deposited film, e.g., oxide film, silicide contact,
and/or polysilicon film, or may be a bare silicon substrate,
including for example a silicon-on-insulator type substrate.
Initially, the photoresist material coats the entire substrate
surface. The photoresist is then exposed to patterned radiation
generated through a mask and developed to remove a portion of the
material, e.g., the opening 104 shown in FIG. 1A between the
remaining photoresist materials 103.
[0022] The substrate is then exposed to an ion implant process.
During ion implant, the surface of the work piece or wafer is
implanted with dopant ions. The process may be, for example, a
plasma-immersion ion implantation (PIII) or ion beam implantation.
The ions bombard the substrate surface, including the exposed
silicon layer 101 and the photoresist 103. With high energy ion
implantation, small amounts of the underlying material 107 may be
sputtered to the photoresist sidewalls. See FIG. 1B. This material
may include some of the implant species, other material in the
plasma or ion beam, and by-products of the implantation. They
include silicon, aluminum, carbon, fluorine, titanium, other
contact materials such as cobalt, and oxygen in both elemental and
compound forms. The actual species depend on the composition of the
substrate before ion implant, the photoresist, and the implanted
species.
[0023] At the exposed silicon layer 101, a doped region 109 is
created. The ion energy or intensity of the bombardment determines
the depth or thickness of the doped region. The density of the ion
flux determines the extent of doping.
[0024] The ions also impregnate the photoresist surface creating a
crust layer 105. The crust layer 105 may be carbonized and highly
cross-linked polymer chains. The crust is usually depleted of
hydrogen and impregnated with the implant species. The crust layer
105 is denser than the bulk resist layer 103. The relative density
depends on the ion flux while the thickness of the crust layer
depends on the ion energy.
[0025] This crust layer 105 is harder to strip than the bulk
photoresist 103 below. Removal rates of the crust layer may be 50%
or 75% slower than the underlying bulk photoresist. The bulk
photoresist contains relatively high levels of chemically bonded
nitrogen and some of its original casting solvent. At elevated
wafer temperature, e.g., above 150 to above 200.degree. C., the
bulk resist can outgas and expand relative to the crust layer. The
entire photoresist can then "pop" as the underlying bulk
photoresist builds up pressure under the crust. Photoresist popping
is a source of particles and process defects because the residues
are especially hard to clean from the wafer surface and chamber
internal parts. With high-dose ion implantation, the density
difference between the crust and underlying bulk photoresist layer
is even higher. The crust may also be thicker.
[0026] FIG. 1C shows the substrate after a strip that fails to
completely remove the photoresist 103 and the sidewall sputter
residue 107. The sidewall sputter residue 107 may include particles
that do not form a volatile compound under conventional strip
chemistries. These particles may remain after a conventional strip
operation. The residue may also include oxides of implanted species
formed with the reactive oxygen used in the conventional strip
chemistry, such as boron oxide and arsenic oxide. Portions of the
crust 105 may also remain on the substrate. Crust sidewalls and
corners at the bottom of photoresist vias may be hard to strip
because of geometries.
[0027] These residue particles may be removed by overstripping in
some cases, using fluorinated chemistry, or wet cleaning the wafer.
Overstripping in conventional oxygen chemistry has been found to
cause unwanted silicon oxidation but still not remove boron oxide
and arsenic oxide residues if present. Using fluorinated compounds
in plasmas generated in accordance with this invention produces
fluorine radicals that can form volatile boron fluoride and arsenic
fluoride. This helps remove residues but may unfortunately also
etch underlying silicon and silicon oxide from the substrate. Use
of the particular strip fluorinated chemistries in accordance with
embodiments of this invention mitigates this problem.
[0028] Silicon loss is a function of resist thickness, crust
thickness, and percent overstrip. Longer and more aggressive
stripping to remove thicker resist can also remove more silicon.
For resist with thicker crust, the difference between the crust
layer and bulk resist layer is even more pronounced. The thicker
crust sidewalls and corners are even harder to strip. Thus, strip
processes designed to remove thick crust also tends to remove more
silicon. Overstrip may be used to address resist uniformity and
geometries in addition to residue removal. Overstrip is a
continuation of the strip process past the point nominally required
to remove all photoresist. If the photoresist is totally removed in
some areas of the wafer but not others, continuation of the strip
process would cause additional material, typically silicon and
silicon oxide, to be removed from areas that are already stripped.
Typical overstrip is about 100%.
[0029] FIG. 1D shows the substrate after all residue has been
removed. According to various embodiments, the residue is removed
without additional silicon loss or oxidation and with minimum
delay. In certain embodiments, the strip process leaves no residue
and thus reduces the number of process steps.
[0030] FIGS. 2A-2D depicts various stages of semiconductor
fabrication before and after ion implantation and stripping
operations for a particular embodiment in which the device includes
a metal gate. FIG. 2A shows the partially fabricated device
including metal gate stack 210 and patterned photoresist 203 on
semiconductor substrate 201 prior to ion implantation. Note that
patterned photoresist 203 partially obscures the view of metal gate
stack 210 in the depicted figure. In certain embodiments, substrate
201 is a silicon-on-insulator substrate. Shallow trench isolation
(STI) regions 205 are embedded with substrate 201 and are generally
trenches filled with an insulating material such as silicon oxide.
FIG. 2B shows the device during implantation, including ion beam
flux 214 and resputter flux 216. The resputter flux 216 deposits
substrate materials (Si, STI and SiN) on the sidewall. After
implantation, a crust 215 is formed on the top (215a) and sidewalls
(215b) of the bulk photoresist 203 as shown in FIG. 2C. The top
crust 215a and side crust 215b may see different environments
during implantation due to the angle of the ion implant beam flux
214 as well as the sidewall deposition from the resputter flux 216.
Using the processes described herein, the bulk photoresist 203 and
crust formations 215a and 215b are removed, leaving an undamaged
metal gate 210 and minimal loss of surface material from the
surfaces of substrate 201 and STI regions 205, as shown in FIG.
2D.
[0031] The methods described herein remove photoresist and residues
while minimizing silicon loss and damage to the gate stack.
According to various embodiments, the metal gate stack can include
one or more of titanium nitride (TiN), Ta, TaN, or W. A high-k gate
dielectric such as hafnium oxide, zirconium oxide and titanium
oxide may be disposed between the substrate and metal gate. Unlike
polysilicon gates, metal gates are incompatible with conventional
oxygen-based strip chemistries. Moreover, conventional oxygen-based
chemistries result in high silicon loss.
[0032] One aspect of the invention relates to novel strip
chemistries for high dose implant resist and residue removal that
limit silicon loss. According to various embodiments, the
photoresist and residues are exposed to a plasma formed from
molecular hydrogen, a weak oxidizing agent, a fluorine-containing
compound and a protectant compound. The disclosed processes achieve
a substantially residue free strip process with minimal silicon
loss and are compatible with metal gates. Without being bound by
any particular theory or mechanism of reaction, it is believed that
fluorine radicals in the plasma combine with hydrogen in the
process gas to form hydrogen fluoride (HF) instead of remaining as
fluorine radicals. The silicon loss is believed to be reduced in
part because the protectant compound reacts with the surface
silicon to form protective polymerized films, carbides, nitrides or
other non-oxide protective layers, which have lower etch rates than
oxides in HF.
[0033] Process Chemistries
[0034] As indicated, the strip process involves generating a plasma
from a gas including various component gases. The strip chemistries
described herein are hydrogen-based, rather than oxygen-based.
Molecular hydrogen (H.sub.2) is the main component of the
plasma-generating gas, with 1,000-40,000 sccm, e.g., 1,000-6,000
sccm, H.sub.2 run in the background, with example flow rates of
other components of the plasma-generating gas being at least an
order of magnitude. According to various embodiments, the other
component gases include a fluorine-containing compound and a
protectant compound. In many embodiments, carbon dioxide or other
weak oxidizing agent is included, though in certain embodiments it
is not.
[0035] Examples of weak oxidizing agents include carbon oxides such
as carbon dioxide (CO.sub.2), carbon monoxide (CO), nitrogen oxides
such as nitrous oxide (N.sub.2O), nitric oxide (NO), nitrogen
dioxide (NO.sub.2), and sulfur oxides such as sulfur oxide (SO) and
sulfur dioxide (SO.sub.2). Examples of other weak oxides include
any oxygen containing hydrocarbons (C.sub.XH.sub.YO.sub.Z) and
water (H.sub.2O). In certain embodiments the weak oxidizing agent
is a carbon-containing compound. In particular embodiments, carbon
dioxide is used as the weak oxidizing agent because it is cheap,
safe, and effective.
[0036] The fluorine-containing gas can be nitrogen trifluoride
(NF.sub.3), sulfur hexafluoride (SF.sub.6), hexafluoroethane
(C.sub.2F.sub.6), tetrafluoromethane (CF4), trifluoromethane
(CHF.sub.3), difluoromethane (CH.sub.2F.sub.2), octofluoropropane
(C.sub.3F.sub.8), octofluorocyclobutane (C.sub.4F.sub.8),
octofluoro[1-]butane (C.sub.4F.sub.8), octofluoro[2-]butane
(C.sub.4F.sub.8), octofluoroisobutylene (C.sub.4F.sub.8), fluorine
(F.sub.2), and the like. In particular embodiments, the
fluorine-containing gas is NF.sub.3, SF.sub.6, F.sub.2, or HF
vapor. As described below, it has been found that these gases are
superior strip gases than certain carbon-containing etchants such
as CF.sub.4. In certain embodiments, the fluorine-containing
compound is a non-carbon containing compound. In a particular
embodiment, NF.sub.3 is used as the fluorine-containing gas. As
discussed above, it is believed that the main etchant component in
the chamber during the strip is HF vapor. Accordingly, in certain
embodiments, any fluorine-containing gas that readily converts to
HF vapor may be used.
[0037] The protectant compound is generally a carbon-containing
compound, though in certain embodiments it may be a
nitrogen-containing compound. In certain embodiments, the
protectant gas may also be a fluorine-containing compound. For
example, in certain embodiments, the protectant compound is
CF.sub.4. It should be noted that the process chemistry generally
includes both a fluorine-containing compound (e.g., NF.sub.3) and a
protectant compound (CF4), where these compounds are distinct. That
is, even where the protectant compound contains fluorine, a
distinct fluorine-containing compound is provided as well. In
certain embodiments, the fluorine-containing compound is a
significantly stronger etchant than the protectant compound. In
certain embodiments, the protectant compound is a carbon-containing
compound, with examples including CF.sub.4, and CH.sub.4. In
certain embodiments, the protectant compound is a
nitrogen-containing compound. Without being bound by a particular
theory or mechanism, it is believed that the protectant compound
reacts with, or provides reactant species to react with, the
silicon/silicon oxide surfaces, forming for example, carbides and
nitrides, that are more resistant to etching. For example, the etch
rate of a nitride in HF is on the order of about 50 times less than
that of an oxide, with the etch rate of a carbide about at least
about an order of magnitude less than that of a nitride. In certain
embodiments, oxygen-containing compounds may be employed as
protectant compounds, so long as the compounds are not strong
oxidants.
[0038] In a particular embodiment, the strip chemistry is
H.sub.2/CO.sub.2/NF.sub.3/CF.sub.4, with example relative
volumetric ratios being 100/0.1-1/0.5-4/2-5. In one example, a
ratio is 3000/32/15/100. The total flow rate of gas, the relative
amount of weak oxidizing agent, fluorine-containing gas, protectant
gas and other conditions in the strip chamber can vary depending
upon, among other factors, plasma type (downstream versus direct),
RF power, chamber pressure, substrate (wafer) size and type of weak
oxidizing agent, fluorine-containing gas and protectant gas used.
Based on a 300 mm wafer in a Novellus Gamma.TM. system, the total
flow rate of gas may range between about 1,000 sccm and about
40,000 sccm with the flow rate of carbon dioxide about 1 sccm and
about 400 sccm and RF power will preferably range between about 300
Watts to about 5000 Watts. Chamber pressures will typically range
between about 300 mTorr and about 2 Torr, e.g., between about 800
mTorr and about 1.6 Torr.
[0039] As discussed further below, in certain embodiments, the
ratios of fluorine-containing gas and protectant gas are varied in
certain process sequence to provide complete photoresist and
residue removal and low silicon loss. Also as discussed further
below, the carbon dioxide or other weak oxidizing agent is
controlled to reduce silicon loss.
[0040] Process Sequences
[0041] In certain embodiments, process sequences effective to
remove the high dose implant crust and residue removal are
provided. In certain embodiments, the process sequences involve
varying the ratio of the fluorine-containing gas and the protectant
gas during the process sequence to provide the necessary removal.
In certain embodiments, the process sequences involve an operation
in which the wafer is exposed to a plasma generated from a gas
including a fluorine-containing and protectant component gases
followed by an operation in which the wafer is exposed to a plasma
generated from a fluorine-containing gas only. In certain
embodiments, these operations may be reversed.
[0042] FIGS. 3A and 3B show experimental results indicating that
the fluorine-containing gas (NF3) and a protectant gas (CF4) may be
employed to both reduce residue and reduce silicon loss. FIG. 3A
shows a residue score, which indicates the amount of residue, as
functions of NF3 and CF4 flow rates (with the other compound held
at constant flow rate). As flow rate increases, the residue
decreases due to the increased presence of fluorine. Note that in
embodiments wherein the protectant gas is not a fluorine-containing
compound, the curve for the protectant gas may be flattened. FIG.
3B shows silicon loss as functions of NF3 and CF4 flow rates.
Silicon loss increases with increasing NF3 flow rate, due to the
etching of the surface by activated fluorine species and/or
fluorine-containing compounds in the plasma. However, silicon loss
decreases with increasing CF4 flow rate at a fixed NF3 flow rate
such as 60 sccm as indicated on FIG. 3B. The slope of the CF4
response is higher or lower depending on NF3 flow
rate--illustrating the importance of having the right ratio. As
indicated above, it is believed that the decrease in silicon loss
with higher CF4 flow rates (contrary to what would normally be
expected with increasing fluorine) may be due to the formation of a
carbon-containing protective film at the substrate surface. The
protective film may be formed by a polymerization reaction between
carbon species and the silicon surface material. The use of a
fluorine-containing protective gas allows the protectant gas to
simultaneously provide a protective effect as well as (along with
the fluorine-containing gas) provide residue removal.
[0043] If NF3 is used alone (e.g., in a H2/CO2/NF3 process), the
residue may all be removed, but at an unacceptably high silicon
loss. If CF4 is used alone (e.g., in a H2/CO2/CF4 process), the
removal process will be significantly slower, and may not result in
complete removal. According to various embodiments, the process
includes at least one operation that uses a combination of NF3 and
CF4. For example, in one embodiment, a post-high implant dose
(post-HDI) wafer may be placed into a strip chamber. After
pre-heating the wafer, H2/CO2/CF4/NF3 gas is introduced in the
chamber, and a plasma struck. The wafer is exposed to the plasma
for a period of time sufficient to clean the crust, bulk
photoresist and other residue.
[0044] In certain embodiments, the process sequence varies the
relative amount of NF3 (or other fluorine-containing gas) and CF4
(or other protectant gas). Depending on the type of resist, ion
implanted and implantation parameters, different process sequences
may be employed. Below are descriptions of sequences or parts of
sequences that may be employed to remove parts of the bulk
photoresist, crust and sputter residue, along with examples of
process sequences for stripping various post-implant photoresist
and residue formations. For simplicity, the below description
refers to NF3 and CF4, however, it should be understood that other
fluorine-containing and protectant gases, respectively may be
employed for either of these component gases. In certain
embodiments, a two step process for removing side and top crusts is
employed, involving NF3+CF4, followed by NF3 only. (H2 and
optionally CO2 are run in the background for all strip operations).
The two step process is employed to remove the side crust (NF3+CF4)
followed by the top crust (NF3 only). The NF3 only operation may
involve a fluorine "spike" or "burst" in which the NF3 flow rate is
increased by two or more times. For example, the following
per-station flow rates may be applied: First operation (side
crust): 2-3 liters per minute (lpm) H2; 32 sccm CO2; 100 sccm CF4;
15 sccm NF3. Second operation (top crust): 2-3 lpm H2; 32 sccm CO2;
0 sccm CF4; 50 sccm NF3. It should be noted that the flow rates
described may be scaled up or down depending on the size and
configuration of the reactor, wafer size, and dose time. It has
been found that in certain cases using NF3 only, for an acceptable
level of silicon loss, the top crust is removed, but the side crust
is not removed. It has also been found that in certain cases using
NF3+CF4, for an acceptable level of silicon loss, removes the side
crust but not the top crust. Accordingly, employing a two-step
process as discussed allows removal of both the side and top
crusts.
[0045] FIG. 4 describes a process flow 400 for removing photoresist
and crusts according to various embodiments. First in an operation
401, the wafer is pre-heated to a temperature low enough to prevent
popping, but high enough to provide an acceptable etch rate.
According to various embodiments, this may be between 200 C-400 C,
more particularly between 240 C-350 C, e.g., at 285 C. At operation
403, the wafer is exposed to a plasma generated from hydrogen,
carbon dioxide, nitrogen trifluoride and carbon tetrafluoride
(H2/CO2/NF3/CF4). Generating the plasma generally involves
introducing the component gases (which may be pre-mixed or not)
into a plasma source. Various types of plasma sources may be used
in accordance with the invention, including RF, DC, and microwave
based plasma sources. In certain embodiments, the plasma is a
remote plasma source though it may also be in-situ (i.e., in the
strip chamber). This first operation may remove the side crust and
the bulk photoresist, while protecting the surface from silicon
loss. Then in an operation 405, the CF4 flow is turned off, and the
wafer is exposed to a plasma generated from hydrogen, carbon
dioxide and nitrogen trifluoride (H2/CO2/NF3) only. This operation
removes the top crust residue. After removing byproducts (not
shown), the process ends at an operation 407, and the cleaned wafer
may be removed.
[0046] In certain embodiments, in addition to or instead of turning
off the CF4, the CF4/NF3 ratio may be changed as necessary by
increasing or decreasing the flow rates. For example, in certain
embodiments, a combination of CF4 and NF3 is employed to remove the
bulk photoresist and/or side crusts. NF3 is spiked at various
points in the process to provide additional removal for residues
not easily removed. Spiking NF3 may or may not involve reducing or
turning the CF4 flow. FIG. 5 shows an example of such a process 500
according to various embodiments. As with the previous example, the
wafer is first pre-heated in an operation 501. Then the wafer is
exposed to a plasma generated from H2/CO2/NF3/CF4, with NF3 spiked,
in an operation 503. This operation may remove the crust while
protecting against silicon loss. In certain embodiments, both top
and side crusts may be removed. Then in an operation 505, the NF3
flow rate is reduced and the wafer is exposed to a plasma generated
from H2/CO2/NF3/CF4 for removal of the bulk photoresist. In an
operation 507, the CF4 flow is turned off and the wafer is exposed
to a plasma generated from H2/CO2/NF3. The NF3 is optionally spiked
during this operation. This operation may be an overstrip operation
to completely remove any remaining residue. Overstripping refers to
a continuation of the strip process past the point nominally
required to remove all photoresist, and may involve stripping
material from already cleaned surfaces. After removing byproducts
(not shown), the process ends at an operation 509, and the cleaned
wafer may be removed.
[0047] As indicated, depending on the particular post-implant
photoresist and residue formation on the wafer or other work piece,
spiking NF3 may be done at different stages in the process. For
example, NF3 may be spiked at the beginning of the removal process
to facilitate difficult top crust removal. The top crust may be
removed at the beginning of the process to prevent the possibility
of popping. Bulk photoresist removal may then be performed using a
lower NF3 flow rate in combination with CF4. In certain
embodiments, NF3 is spiked after removal of the bulk photoresist to
facilitate stringer removal. Stringers are long, narrow photoresist
residue segments that may be left by non-exposure between two
adjacent exposure areas.
[0048] In certain embodiments, the NF3 and CF4 ratio during removal
of all or part of the bulk photoresist may be considered to be a
"base" ratio, with spikes measured relative to this ratio. So for
example, taking a NF3:CF4 during bulk photoresist removal to be a
"base," according to various process sequences the ratio may be
raised prior to and/or after the bulk photoresist removal. In one
example, the base ratio is 3:20 (e.g., 15 sccm NF3, 100 sccm CF4)
with a spike raising the ratio to 1:2 (50 sccm NF3, 100 sccm CF4),
or in cases in which CF4 is not present, infinity. The actual flow
rates and ratios employed for any particular process may vary;
however by changing the relative flow rates and the ratio, the
removal process can be controlled using the effects shown in FIGS.
3A and 3B. In certain embodiments, CF4 only and no NF3 may be
present for one or more operations, however, in many embodiments,
CF4 has been found to provide adequate protection allowing the
process to take advantage of the higher removal rate of NF3.
According to various embodiments, a base ratio of 1:50-1:2 may be
employed, with a spike being higher than the base ratio. In certain
embodiments, a NF3 spike may involve at least doubling the ratio of
NF3:CF4.
[0049] As indicated above, in certain embodiments, a CO2 bleed gas
is employed, and run at all times with H2. It has been found that
for a 300 mm wafer, using 10-15 lpm H2 (2-3 lpm per station),
running between about 100 sccm-300 sccm CO2 (20 to 60 sccm per
station) results in less silicon loss than outside this range. This
is shown in FIG. 6. The flow rates in FIG. 6 reflect the total CO2
over a 5-station chamber; on a per-station basis, the wafer sees 20
sccm-60 sccm CO2, more particularly 32 sccm.
Process Parameters
[0050] Inlet Gas
[0051] A hydrogen-containing gas, typically including molecular
hydrogen, is introduced to the plasma source. The gas introduced to
the plasma source contains the chemically active species that will
be ionized or otherwise in the plasma source to form a plasma. The
gas introduced to the plasma source includes a fluorine-containing
gas such as elemental fluorine, nitrogen trifluoride, and sulfur
hexafluoride. The gas introduced to the plasma includes a
protectant gas, typically a carbon-containing protectant gas. In
certain embodiments, the protectant gas is a fluorocarbon gas, such
as carbon tetrafluoride, C.sub.2F.sub.6 or a hydrofluorocarbon.
[0052] In certain specific embodiments, the gas introduced to the
plasma source comprises between about 0.1% to about 3% carbon
tetrafluoride by volume and about 0.3% to 2% nitrogen trifluoride
by volume. The gas introduced to the plasma source may include a
weak oxidizing agent such as carbon dioxide, carbon monoxide,
nitrogen dioxide, nitrogen oxide and/or water. In certain
embodiments, the weak oxidizing agent is carbon dioxide. According
to various embodiments, the inlet gas may include between about 1
and 99 volume percent, about 80 and 99.9 volume percent, or about
95 volume percent molecular hydrogen, between about 0 and 25 volume
percent CO2 or other weak oxidizing agent, between about 0.1 and 3
volume percent nitrogen trifluoride or other non-carbon containing
fluorine-containing compound and between about 0.1 and 6% volume
percent carbon tetrafluoride or other protectant compound.
[0053] In certain embodiments, the gas inlet to the plasma source
consists essentially of molecular hydrogen, carbon dioxide or other
weak oxidizing agent, non-carbon containing fluorine-containing
compound, and protectant compound. In certain embodiments wherein
the protectant gas flow is shut off in one or more operations in a
process sequence, the gas inlet to the plasma source consists
essentially of molecular hydrogen, carbon dioxide or other weak
oxidizing agent and non-carbon containing fluorine-containing
compound. In other embodiments, an additional one or more gasses
may be added to the process gas. For example, an inert gas may be
added.
[0054] The gas introduced to the plasma source may be premixed,
partially mixed or unmixed. Individual gas sources may flow into a
mixing plenum before being introduced to the plasma source. In
other embodiments, the different gases may separately enter the
plasma source. The gas introduced to the plasma source may have
different compositions when used in different reaction stations of
a multistation chamber. For example in a 6-station chamber, station
1 (or station 2, if station 1 is used for pre-heat) or station 6
may employ process gases with relatively higher amounts of NF3 gas
to remove the crust or the residue, respectively. One or more of
the other stations may employ process gases with little or no
protectant gas. Process gases with no carbon dioxide or weak
oxidizing agents may also be used.
[0055] Methods of stripping photoresist and etch materials using
hydrogen-based plasmas with weak oxidizing agents are disclosed in
U.S. Pat. No. 7,288,484, which is hereby incorporated by reference
in its entirety and for all purposes. Post-HDI methods of stripping
photoresist and etch residue are described in U.S. Patent
Publication No. US-2009-0053901, which is hereby incorporated by
reference in its entirety and for all purposes.
[0056] Plasma Generation
[0057] Various types of plasma sources may be used in accordance
with the invention, including RF, DC, and microwave based plasma
sources. In a preferred embodiment, a downstream RF plasma source
is used. Typically, the RF plasma power for a 300 mm wafer ranges
between about 300 Watts to about 10 Kilowatts. In some embodiments,
the RF plasma power is between about 2000 Watts and 5000 Watts,
e.g., 3500 W.
[0058] Showerhead Assembly
[0059] According to various embodiments of the present invention
the plasma gas is distributed to the work surface via a showerhead
assembly. The showerhead assembly may be grounded or have an
applied voltage to attract some charge species while not affecting
the flow of neutral species to the wafer, e.g., 0-1000 watt bias.
Many of the electrically charged species in the plasma recombine at
the showerhead. The assembly includes the showerhead itself which
may be a metal plate having holes to direct the plasma and inert
gas mixture into the reaction chamber. The showerhead redistributes
the active hydrogen from the plasma source over a larger area,
allowing a smaller plasma source to be used. The number and
arrangement of the showerhead holes may be set to optimize strip
rate and strip rate uniformity. If the plasma source is centrally
located over the wafer, the showerhead holes are preferably smaller
and fewer in the center of the showerhead in order to push the
active gases toward the outer regions. The showerhead may have at
least 100 holes. Suitable showerhead include the Gamma xPR
showerhead or the GxT drop-in showerhead available from Novellus
Systems, Inc. of San Jose, Calif. In embodiments in which there is
no showerhead assembly, the plasma enters the process chamber
directly.
[0060] Process Chamber
[0061] The process chamber may be any suitable reaction chamber for
the strip operation being performed. It may be one chamber of a
multi-chambered apparatus or it may simply be a single chamber
apparatus. The chamber may also include multiple stations where
different wafers are processed simultaneously. The process chamber
may be the same chamber where the implant, etch, or other
resist-mediated process takes place. In other embodiments, a
separate chamber is reserved for the strip. Process chamber
pressure may range from about 600 mTorr to 2 Torr. In certain
embodiments, the pressure ranges from about 0.9 Torr to 1.5
Torr.
[0062] The process chamber includes one or more processing stations
on which strip operations are performed. In certain embodiments,
the one or more processing stations includes a preheat station, at
least one strip station, and an over-ash station. The wafer support
is configured to support the wafer during processing. The wafer
support may also transfer heat to and from the wafer during
processing to adjust the wafer temperature as necessary. In certain
embodiments, the wafer is supported on a plurality of minimum
contacts and does not physically contact the wafer support surface
plane. A spindle picks up the wafer and transfers the wafer from
one station to another. FIG. 8 is a schematic illustration showing
aspects of a downstream plasma apparatus 800 suitable for
practicing the present invention on wafers. Apparatus 800 has a
plasma producing portion 811 and an exposure chamber 801 separated
by a showerhead assembly 817. Inside exposure chamber 801, a wafer
803 rests on a platen (or stage) 805. Platen 805 is fitted with a
heating/cooling element. In some embodiments, platen 805 is also
configured for applying a bias to wafer 803. Low pressure is
attained in exposure chamber 401 via vacuum pump via conduit 807.
Sources of gaseous hydrogen (with or without dilution/carrier gas)
and carbon dioxide (or other weak oxidizing agent) provide a flow
of gas via inlet 809 into plasma producing portion 811 of the
apparatus. Plasma producing portion 811 is surrounded in part by
induction coils 813, which are in turn connected to a power source
815. During operation, gas mixtures are introduced into plasma
producing portion 811, induction coils 813 are energized and a
plasma is generated in plasma producing portion 811. Showerhead
assembly 817 may have an applied voltage or be grounded directs the
flow of species into exposure chamber 801. As mentioned, wafer 803
may be temperature controlled and/or a RF bias may be applied.
Various configurations and geometries of the plasma source 811 and
induction coils 813 may be used. For example, induction coils 813
may loop around the plasma source 811 in an interlaced pattern. In
another example, the plasma source 811 may be shaped as a dome
instead of a cylinder. A controller 850 may be connected to
components of the process chamber, and control process gas
composition, pressure, temperature and wafer indexing of the
stripping operations. Machine-readable media may be coupled to the
controller and contain instructions for controlling process
conditions for these operations.
[0063] Suitable plasma chambers and systems include the Gamma 2100,
2130 I.sup.2CP (Interlaced Inductively Coupled Plasma), G400, and
GxT offered by Novellus Systems, Inc. of San Jose, Calif. Other
systems include the Fusion line from Axcelis Technologies Inc. of
Rockville, Md., TERA21 from PSK Tech Inc. in Korea, and the Aspen
from Mattson Technology Inc. in Fremont, Calif. Additionally,
various strip chambers may be configured onto cluster tools. For
example, a strip chamber may be added to a Centura cluster tool
available from Applied Materials of Santa Clara, Calif.
[0064] Work Piece
[0065] In preferred embodiments, the work piece used in accordance
with the methods and apparatus of the invention is a semiconductor
wafer. Any size wafer may be used. Most modern wafer fabrication
facilities use either 200 mm or 300 mm wafers. As disclosed above,
the process and apparatus disclosed herein strips photoresist after
a processing operation such as etching, ion implant, or deposition.
The present invention is suitable for wafers having very small
features or critical dimensions, e.g., sub 100 nm, at 65 nm, or at
or less than 45 nm. The low silicon loss feature of the HDIS as
disclosed is particularly suitable for very shallow junctions of
advanced logic devices. The present invention is also specifically
suitable for wafers undergoing front end of the line (FEOL) ion
implantation, especially high-dose ion implantation.
[0066] The plasma-activated species reacts with the photoresist and
sputter residue on the wafer. At the wafer, the reactive gas may
include a number of plasma activated species, the inert gas,
radicals, charged species, and gas by-products. The volume
concentration of various hydrogen species may be about 20-80% of
the gas at the wafer. The volume concentration of various fluorine
species may be 0.01% to about 2% or less than 1%. The volume
concentration of various species from the weak oxidizing agent may
be 0.05 to about 5% or about 1.2%. These species may include
H.sub.2*, H.sub.2.sup.+, H.sup.+, H*, e.sup.-, OH, O*, CO,
CO.sub.2, H.sub.2O, HF, F*, F.sup.-, CF, CF.sub.2, and
CF.sub.3.
[0067] Process conditions may vary depending upon the wafer size.
In some embodiments of the invention, it is desired to keep the
work piece at a particular temperature during the application of
plasmas to its surface. Wafer temperatures can range between about
110 degrees and about 500 degrees Celsius. To reduce the likelihood
of photoresist popping described above, wafer temperature is
preferably increased slowly until enough crust has been removed and
photoresist popping ceases to be a concern. Initial station
temperature may be about 110 degrees to about 260 degrees Celsius,
for example, about 240 degrees Celsius. Later stations can use
higher temperatures such as 285 degrees Celsius and about 350
degrees Celsius successfully with good strip rates. In certain
embodiments, the temperature is increased during NF3 spikes to
reduce Si loss associated with these spikes.
Example Processes
[0068] As indicated above, in certain embodiments, a multi-station
strip apparatus is employed to perform the photoresist and residue
stripping processes described herein. FIG. 7 is a simplified
schematic showing a top view of such an apparatus including
stations 1, 2, 3, 4, 5 and 6. Wafers enter the apparatus at station
1 via chamber 701, are transferred to each station in sequence for
a processing operation at that station and exit from station 6 via
chamber 702 after the process is complete. The architecture allows
hydrogen based residue free high dose implant strip process with
low silicon loss and TiN metal gate compatibility.
Example Process 1
TABLE-US-00001 [0069] H2 CO2 NF3 CF4 Flow Flow Flow Flow Temper-
Sta- Rate Rate Rate Rate ature tion Operation (lpm) (sccm) (sccm)
(sccm) (C.) 1 Pre-heat 0 0 0 0 240 2 Crust Removal 2-3 32 15 100
240 3-5 Bulk Photo- 2-3 32 15 100 285 resist Strip 6 Overash and
2-3 32 50 0 350 Residue Clean
[0070] The above process is an example of a process sequence
including a NF3 spike in station 6.
Example Process 2
TABLE-US-00002 [0071] H2 CO2 NF3 CF4 Flow Flow Flow Flow Temper-
Sta- Rate Rate Rate Rate ature tion Operation (lpm) (sccm) (sccm)
(sccm) (C.) 1 Pre-heat 0 0 0 0 240 2 Crust Removal 2-3 32 15 100
240 (2-Stage) 50 100 3-5 Bulk Photo- 2-3 32 15 100 285 resist Strip
6 Overash and 2-3 32 50 0 350 Residue Clean
[0072] The above process is an example of a process sequence
including a NF3 spike for half of the exposure time in station 2,
during crust removal. For example, a wafer may be in the station
for 18 seconds, with NF3 spiked for the second 9 seconds.
Example Process 3
TABLE-US-00003 [0073] H2 CO2 NF3 CF4 Flow Flow Flow Flow Temper-
Sta- Rate Rate Rate Rate ature tion Operation (lpm) (sccm) (sccm)
(sccm) (C.) 1 Pre-heat 0 0 0 0 240 2 Crust Removal 2-3 32 50 100
240 (2-Stage) 50 0 3-5 Bulk Photo- 2-3 32 15 100 285 resist Strip 6
Overash and 2-3 32 50 0 350 Residue Clean
[0074] The above process is an example of a process in which CF4 is
shut off at a point during the station 2 exposure time, e.g., to
aid in crust removal.
Example Process 4
TABLE-US-00004 [0075] H2 CO2 NF3 CF4 Flow Flow Flow Flow Temper-
Sta- Rate Rate Rate Rate ature tion Operation (lpm) (sccm) (sccm)
(sccm) (C.) 1 Pre-heat 0 0 0 0 240 2-5 Bulk Photo- 2-3 32 50 100
240 resist Strip and Removal of Residue for Side Crust 3-5 Bulk
Photo- 2-3 32 15 100 285 resist Strip 6 Overash and 2-3 32 50 0 350
Residue Clean
[0076] The above process sequences provide examples showing how the
strip may be controlled by modifying the relative NF3 and CF4 flow
rates.
[0077] While this invention has been described in terms of a few
preferred embodiments, it should not be limited to the specifics
presented above. Many variations on the above-described preferred
embodiments, may be employed. Therefore, the invention should be
broadly interpreted with reference to the following claims.
* * * * *