U.S. patent application number 12/752699 was filed with the patent office on 2010-07-29 for interlayer dielectric under stress for an integrated circuit.
This patent application is currently assigned to FREESCALE SEMICONDUCTOR, INC.. Invention is credited to James D. Burnett, Jon D. Cheek.
Application Number | 20100190354 12/752699 |
Document ID | / |
Family ID | 37073903 |
Filed Date | 2010-07-29 |
United States Patent
Application |
20100190354 |
Kind Code |
A1 |
Burnett; James D. ; et
al. |
July 29, 2010 |
INTERLAYER DIELECTRIC UNDER STRESS FOR AN INTEGRATED CIRCUIT
Abstract
An integrated circuit that has logic and a static random access
memory (SRAM) array has improved performance by treating the
interlayer dielectric (ILD) differently for the SRAM array than for
the logic. The N channel logic and SRAM transistors have ILDs with
non-compressive stress, the P channel logic transistor ILD has
compressive stress, and the P channel SRAM transistor at least has
less compressive stress than the P channel logic transistor, i.e.,
the P channel SRAM transistors may be compressive but less so than
the P channel logic transistors, may be relaxed, or may be tensile.
It is beneficial for the integrated circuit for the P channel SRAM
transistors to have a lower mobility than the P channel logic
transistors. The P channel SRAM transistors having lower mobility
results in better write performance; either better write time or
write margin at lower power supply voltage.
Inventors: |
Burnett; James D.; (Austin,
TX) ; Cheek; Jon D.; (Cedar Park, TX) |
Correspondence
Address: |
FREESCALE SEMICONDUCTOR, INC.;LAW DEPARTMENT
7700 WEST PARMER LANE MD:TX32/PL02
AUSTIN
TX
78729
US
|
Assignee: |
FREESCALE SEMICONDUCTOR,
INC.
Austin
TX
|
Family ID: |
37073903 |
Appl. No.: |
12/752699 |
Filed: |
April 1, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11100168 |
Apr 6, 2005 |
7238990 |
|
|
12752699 |
|
|
|
|
Current U.S.
Class: |
438/761 ;
257/E21.24 |
Current CPC
Class: |
H01L 27/1104 20130101;
H01L 27/1116 20130101; H01L 27/11 20130101; H01L 21/823807
20130101; H01L 21/84 20130101; H01L 27/105 20130101; H01L 27/1203
20130101; H01L 29/7843 20130101; H01L 21/823412 20130101; Y10S
257/903 20130101 |
Class at
Publication: |
438/761 ;
257/E21.24 |
International
Class: |
H01L 21/31 20060101
H01L021/31 |
Claims
1-17. (canceled)
18. A method of making a semiconductor device comprising: forming a
first N channel transistor that is used in a logic circuit; forming
a first P channel transistor that is used in the logic circuit;
forming a second N channel transistor that is used in a SRAM array;
forming a second P channel transistor that is used in the SRAM
array; depositing a first dielectric layer over the semiconductor
device that has a first stress; removing the first dielectric layer
over the first and second P channel transistors; depositing a
second dielectric layer over the semiconductor device that has a
second stress that is more compressive than the first stress; and
removing the second layer over the first and second N channel
transistors and the second P channel transistor; depositing a third
dielectric layer over the semiconductor device that has a third
stress that is between the first stress and the second stress;
removing the third dielectric layer over the first and second N
channel transistors and the first P channel transistor.
19. A method of making a semiconductor device comprising: forming a
first N channel transistor that is used in a logic circuit; forming
a first P channel transistor that is used in the logic circuit;
forming a second N channel transistor that is used in a SRAM array;
forming a second P channel transistor that is used in the SRAM
array; depositing a first dielectric layer over the semiconductor
device that has a first stress; removing the first dielectric layer
over the first and second P channel transistors; depositing a
second dielectric layer over the semiconductor device that has a
second stress that is more compressive than the first stress; and
removing the second dielectric layer over the first and second N
channel transistors whereby a first portion of the second
dielectric layer is left on the first P channel transistor and a
second portion of the second dielectric layer is left over the
second P channel transistor; and implanting into the second portion
of the second dielectric layer to cause the second portion of the
second dielectric layer to become less compressive.
20. A method of making a semiconductor device, comprising: forming
a first portion comprising a first transistor of the first type and
a first transistor of a second type for use in a circuit of a first
type; forming a second portion comprising a second transistor of
the first type and a second transistor of the second type for use
in a circuit of a second type; forming a first ILD over the first
transistor of the first type having a first stress of a first type;
and forming a second ILD over the second transistor of the first
type having a second stress that is at least less than the first
stress of the first type.
Description
FIELD OF THE INVENTION
[0001] This invention relates to integrated circuits, and more
particularly to integrated circuits that have an interlayer
dielectric that is stressed to improve performance of the
integrated circuits.
BACKGROUND OF THE INVENTION
[0002] One of the techniques that has been under development to
improve transistor mobility is strained silicon. Typically the
silicon layer is put under tensile stress to improve the N channel
mobility. This has been extended to using an interlayer dielectric
(ILD), a dielectric layer between conductive layers, that is under
a selected stress to improve transistor performance. For N channel
transistors this has meant using tensile stress, and for P channel
transistors this has meant using compressive stress.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] The foregoing and further and more specific objects and
advantages of the invention will become readily apparent to those
skilled in the art from the following detailed description of a
preferred embodiment thereof taken in conjunction with the
following drawings:
[0004] FIG. 1 is a cross section of a semiconductor structure at a
stage in processing according to multiple embodiments of the
invention;
[0005] FIG. 2 is a cross section of the semiconductor structure of
FIG. 1 at a subsequent stage in processing according to first,
second, third, and fourth embodiments of the invention;
[0006] FIG. 3 is a cross section of the semiconductor structure of
FIG. 2 at a subsequent stage in processing according to the first
and fourth embodiments of the invention;
[0007] FIG. 4 is a cross section of the semiconductor structure of
FIG. 3 at a subsequent stage in processing according to the first
and fourth embodiments of the invention;
[0008] FIG. 5 is a cross section of the semiconductor structure of
FIG. 4 at a subsequent stage in processing according to the first
and fourth embodiments of the invention;
[0009] FIG. 6 is a cross section of the semiconductor structure of
FIG. 5 at a subsequent stage in processing according to the first
embodiment of the invention;
[0010] FIG. 7 is a cross section of the semiconductor structure of
FIG. 2 at a subsequent stage in processing according to the second
and third embodiments of the invention;
[0011] FIG. 8 is a cross section of the semiconductor structure of
FIG. 7 at a subsequent stage in processing according to the second
and third embodiments of the invention;
[0012] FIG. 9 is a cross section of the semiconductor structure of
FIG. 8 at a subsequent stage in processing according to the second
embodiment of the invention;
[0013] FIG. 10 is a cross section of the semiconductor structure of
FIG. 9 at a subsequent stage in processing according to the second
embodiment of the invention;
[0014] FIG. 11 is a cross section of the semiconductor structure of
FIG. 10 at a subsequent stage in processing according to the second
embodiment of the invention;
[0015] FIG. 12 is a cross section of the semiconductor structure of
FIG. 11 at a subsequent stage in processing according to the second
embodiment of the invention;
[0016] FIG. 13 is a cross section of the semiconductor structure of
FIG. 8 at a subsequent stage in processing according to the third
embodiment of the invention;
[0017] FIG. 14 is a cross section of the semiconductor structure of
FIG. 13 at a subsequent stage in processing according to the third
embodiment of the invention;
[0018] FIG. 15 is a cross section of the semiconductor structure of
FIG. 5 at a subsequent stage in processing according to the fourth
embodiment of the invention; and
[0019] FIG. 16 is a cross section of the semiconductor structure of
FIG. 15 at a subsequent stage in processing according to the fourth
embodiment of the invention;
DETAILED DESCRIPTION OF THE INVENTION
[0020] In one aspect an integrated circuit that has both logic and
a static random access memory (SRAM) array has improved performance
by treating the interlayer dielectric (ILD) differently for the
SRAM array than for the logic. The N channel logic and N channel
SRAM transistors both have ILDs with non-compressive stress, the P
channel transistor ILD has compressive stress, and the P channel
SRAM transistors at least have less compressive stress than the P
channel logic transistors, i.e., the P channel SRAM transistors may
be compressive but with less magnitude of such compressive stress
than the logic P channel transistors, may be relaxed, or may be
tensile. It has been found to be advantageous for the integrated
circuit for the P channel SRAM transistors to have a lower mobility
than the P channel logic transistors. The P channel SRAM
transistors having lower mobility results in better write
performance; either better write time or write margin at lower
power supply voltage. This is better understood by reference to the
drawings and the following description.
[0021] Shown in FIG. 1 is a semiconductor device 10 comprising
using an SOI substrate comprising a relatively thick insulating
layer 12 and a semiconductor layer 14. Semiconductor layer 14 is
preferably silicon but could be another semiconductor material such
as silicon germanium or silicon carbon. Insulating layer 12 is
preferably oxide but could be another insulating material.
Semiconductor device 10 has built therein a logic region 16 and an
SRAM array region 18. Shown in FIG. 1, logic portion 16 comprises
an N channel transistor 20 and a P channel transistor 22.
Transistors 20 and 22 are representative of many other, typically
millions, N and P channel transistors that would be present on a
typical integrated circuit for the purpose of forming logic
function circuits such as logic gates, registers, and processing
units, as well as other logic function circuits. Similarly shown in
FIG. 1, SRAM array portion 18 comprises an N channel transistor 24
and a P channel transistor 26. Transistors 24 and 26 are similarly
representative of many other, typically millions, N and P channel
transistors that would form an SRAM array. Logic transistors 20 and
22 are isolated from each other and other transistors by isolation
regions 28, 30, and 32 formed in semiconductor layer 14. Similarly
SRAM transistors 24 and 26 are separated from each other and other
SRAM transistors by isolation regions 34, 36, and 38.
[0022] Shown in FIG. 2 is semiconductor device 10 after deposition
of a dielectric layer 40 over logic portion 16 and SRAM array
portion 18. Dielectric layer 40 is deposited with tensile stress.
An exemplary material of dielectric layer 40 is silicon nitride
deposited by plasma-enhanced chemical vapor deposition (PECVD). The
amount of tensile stress is selectable based on the parameters of
the deposition. Dielectric layer 40 has a thickness of about half
the height of the gate of transistors 20, 22, 24, and 26. In this
example, that would make dielectric layer 40 about 500 Angstroms in
thickness.
[0023] Shown in FIG. 3 is semiconductor device 10 after selectively
removing dielectric layer from transistor 22, which is a P channel
transistor, which suffers a reduction in mobility with tensile
stress.
[0024] Shown in FIG. 4 is semiconductor device 10 after deposition
of a dielectric layer 42 over logic portion 16 and SRAM array
portion 18. Dielectric layer 42 is deposited with compressive
stress and of substantially the same thickness as dielectric layer
40. Dielectric layer 42 is also preferably silicon nitride
deposited by PECVD but with the parameters chosen to make it
compressive.
[0025] Shown in FIG. 5 is semiconductor device 10 after selectively
etching dielectric layer 42 so that dielectric layer 42 remains
only over transistor 22 with a small overlap over dielectric layer
40. The etch, although done with a mask step, does result in
dielectric layer 40 being exposed to the etch after dielectric
layer 42 has been etched through. Because both dielectric layers 40
and 42 are of similar composition, silicon nitride formed with
different parameters, there is a small selectivity between the two
layers. Thus, this is preferably a timed etch. It may be desirable
to form dielectric layer 40 to a little more thickness than
dielectric layer 42 to account for some over-etch into dielectric
layer 40. The result at this point is that N channel transistors 20
and 24 have an ILD that is tensile, the SRAM P channel has an ILD
that is tensile, and the logic P channel has an ILD that is
compressive. This provides for enhanced mobility for transistors
20, 22, and 24 and reduced mobility for transistor 26. Transistor
26, as a P channel transistor in an SRAM array, is used as a
pull-up transistor. Such pull-up transistor with lower mobility
improves write performance. This write performance can be either in
the write margin for low power supply voltage applications or for a
faster write.
[0026] Shown in FIG. 6 is semiconductor device 10 after formation
of a dielectric layer 44 that completes formation of an ILD over
transistors 20, 22, 24, and 26. Dielectric layer 44 is preferably
an oxide such as TEOS or another oxide such as doped glass or even
another insulating type of material. Dielectric layer 44 is
preferably of a material that can be planarized and has a stress
that is or is nearly relaxed. After completion of dielectric layer
44, metal layer formation can proceed for providing interconnect
for the integrated circuit.
[0027] Shown in FIG. 7 is a semiconductor device 45 that follows
from semiconductor device 10 of FIG. 2 after an etch that removes
dielectric layer from over transistor 26 as well as transistor 22.
Analogous features from FIGS. 1-6 are retained for FIG. 7.
[0028] Shown in FIG. 8 is semiconductor device 45 after deposition
of dielectric layer 42, which deposition is the same as shown in
FIG. 4, over transistors 20, 22, 24, and 26.
[0029] Shown in FIG. 9 is semiconductor device 45 after selectively
removing layer 42 from over transistors 20, 24, and 26. The partial
removal of dielectric layer 42 is performed in the same as in FIG.
5. The result in this case is that transistor 26 does not have a
dielectric layer in the manner that transistors 20, 22, and 24
have.
[0030] Shown in FIG. 10 is semiconductor device 45 after deposition
of a dielectric layer 46 over logic portion 16 and SRAM array
portion 18. This dielectric layer is also substantially the same
thickness as dielectric layers 40 and 42 is also silicon nitride
deposited by PECVD. In this case the deposition parameters are
chosen so that dielectric layer 46 is at least less compressive
than dielectric layer 42. This means that dielectric layer 46 is
one of compressive but less compressive than dielectric layer 42,
relaxed, or tensile. If tensile, this would preferably be of an
amount different than that of dielectric layer 40.
[0031] Shown in FIG. 11 is semiconductor device 45 after dielectric
layer 46 has been selectively removed from over transistors 20, 22,
and 24. This results in N channel transistors 20 and 24 having an
ILD that is tensile, P channel transistor 22 having an ILD that is
compressive, and P channel transistor 46 having an ILD that is at
least less compressive than that of transistor 42. The SRAM cells
thus have a pull-up transistor that has less mobility than the P
channel transistor used in the logic portion of the integrated
circuit. This is beneficial for SRAM cells and results in improved
write margin or write speed.
[0032] Shown in FIG. 12 is semiconductor device 45 with a completed
ILD showing the formation of a dielectric layer 44, which is
planar, over transistors 20, 22, 24, and 26. Metal interconnect
formation can proceed over dielectric layer 44.
[0033] Shown in FIG. 13 is a semiconductor device 49 that follows
from semiconductor device 45 of FIG. 8 after an etch that removes
dielectric layer 42 from over transistors 20 and 24 so that
dielectric layer 42 remains over transistors 22 and 26. Analogous
features from FIGS. 1-12 are retained for FIG. 13. At this stage P
channel transistors 22 and 26 have the same compressive stress.
[0034] Shown in FIG. 14 is semiconductor device 49 after forming an
implant mask 50 over transistors 20, 22, and 24 and implanting with
an implant 52 into dielectric layer 42 to cause it to convert to a
dielectric layer 54 that at least has less compressive stress than
dielectric layer 42. Implant mask 50 is preferably photoresist but
could be another appropriate material. Implant 52 is preferably
xenon but could be another implant species that would have the
effect of reducing the amount of compressive stress of dielectric
layer 54. This implant is particularly useful in causing dielectric
layer 42 to become relaxed. The result of the implant is to have P
channel pull-ups in the SRAM cells that have less mobility and thus
result in improved write margin or improved write speed.
[0035] Shown in FIG. 15 is a semiconductor device 55 that follows
from semiconductor device 10 of FIG. 5 after formation of an
implant mask 56 is formed over transistors 20, 22, and 24.
Analogous features from FIGS. 1-6 are retained for FIG. 13. This
shows that a portion of dielectric layer 40 that is over transistor
26 is exposed.
[0036] Shown in FIG. 16 is semiconductor device 55 after performing
an implant 58 that reduces the tensile stress of the exposed
portion of dielectric layer 40 so that it becomes dielectric layer
60. This approach is particularly useful when it is desired that
the P channel pull-up be somewhat tensile, to reduce the mobility,
but not so tensile as for the N channel transistors. If the pull-up
becomes too tensile, the read static noise margin can degrade. The
result of the implant is still to have P channel pull-ups in the
SRAM cells that have less mobility than the logic P channels and
thus result in improved write margin or improved write speed.
[0037] Various changes and modifications to the embodiments herein
chosen for purposes of illustration will readily occur to those
skilled in the art. For example, the order of formation of
dielectric layers can be changed. Instead of forming tensile layer
40 first, compressive layer 42 could be formed first. Also these
embodiments have been shown using an SOI substrate but another
substrate type, such as bulk or bulk-SOI hybrid, could also be
used. To the extent that such modifications and variations do not
depart from the spirit of the invention, they are intended to be
included within the scope thereof which is assessed only by a fair
interpretation of the following claims.
* * * * *