U.S. patent application number 12/698862 was filed with the patent office on 2010-06-03 for substrate processing apparatus.
This patent application is currently assigned to Sokudo Co., Ltd.. Invention is credited to Toru Asano, Masashi Kanaoka, Koji Kaneyama, Tsuyoshi Mitsuhashi, Tadashi Miyagi, Tsuyoshi Okumura, Kazuhito Shigemori, Takashi Taguchi, Yukio Toriyama, Shuichi Yasuda.
Application Number | 20100136257 12/698862 |
Document ID | / |
Family ID | 36652899 |
Filed Date | 2010-06-03 |
United States Patent
Application |
20100136257 |
Kind Code |
A1 |
Yasuda; Shuichi ; et
al. |
June 3, 2010 |
SUBSTRATE PROCESSING APPARATUS
Abstract
A method of processing a substrate in a substrate processing
apparatus that is arranged adjacent to an exposure device and
includes first, second and third processing units, includes forming
a photosensitive film on the substrate by said first processing
unit before exposure processing by said exposure device and
applying washing processing to the substrate by supplying a washing
liquid to the substrate in said second processing unit after the
formation of said photosensitive film and before the exposure
processing. The method also includes applying drying processing to
the substrate in said second processing unit after the washing
processing by said second processing unit and before the exposure
processing and applying development processing to the substrate by
said third processing unit after the exposure processing. Applying
the drying processing to the substrate includes the step of
supplying an inert gas onto the substrate, to which the washing
liquid is supplied.
Inventors: |
Yasuda; Shuichi; (Kyoto,
JP) ; Kanaoka; Masashi; (Kyoto, JP) ;
Kaneyama; Koji; (Kyoto, JP) ; Miyagi; Tadashi;
(Kyoto, JP) ; Shigemori; Kazuhito; (Kyoto, JP)
; Asano; Toru; (Kyoto, JP) ; Toriyama; Yukio;
(Kyoto, JP) ; Taguchi; Takashi; (Kyoto, JP)
; Mitsuhashi; Tsuyoshi; (Kyoto, JP) ; Okumura;
Tsuyoshi; (Kyoto, JP) |
Correspondence
Address: |
TOWNSEND AND TOWNSEND AND CREW, LLP
TWO EMBARCADERO CENTER, EIGHTH FLOOR
SAN FRANCISCO
CA
94111-3834
US
|
Assignee: |
Sokudo Co., Ltd.
Kyoto
JP
|
Family ID: |
36652899 |
Appl. No.: |
12/698862 |
Filed: |
February 2, 2010 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11295216 |
Dec 6, 2005 |
|
|
|
12698862 |
|
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|
|
Current U.S.
Class: |
427/553 |
Current CPC
Class: |
H01L 21/67028 20130101;
H01L 21/67051 20130101; H01L 21/67034 20130101; H01L 21/67178
20130101; G03F 7/30 20130101; H01L 21/67225 20130101 |
Class at
Publication: |
427/553 |
International
Class: |
B05D 3/06 20060101
B05D003/06 |
Foreign Application Data
Date |
Code |
Application Number |
Dec 6, 2004 |
JP |
2004-353120 |
Mar 29, 2005 |
JP |
2005-095783 |
Sep 14, 2005 |
JP |
2005-267331 |
Claims
1. A method of processing a substrate in a substrate processing
apparatus that is arranged adjacent to an exposure device and
includes first, second and third processing units, comprising the
steps of: forming a photosensitive film made of a photosensitive
material on the substrate by said first processing unit before
exposure processing by said exposure device; applying washing
processing to the substrate by supplying a washing liquid to the
substrate in said second processing unit after the formation of
said photosensitive film by said first processing unit and before
the exposure processing by said exposure device; applying drying
processing to the substrate in said second processing unit after
the washing processing by said second processing unit and before
the exposure processing by said exposure device and applying
development processing to the substrate by said third processing
unit after the exposure processing by said exposure device, wherein
said step of applying the drying processing to the substrate
includes the step of supplying an inert gas onto the substrate, to
which the washing liquid is supplied.
2. The substrate processing method according to claim 1, wherein
said step of supplying the inert gas includes the steps of:
rotating the substrate, onto which the washing liquid is supplied,
about an axis vertical to the substrate while holding the substrate
substantially horizontally, and supplying the inert gas onto the
substrate being rotated.
3. The substrate processing method according to claim 2, wherein
said step of supplying the inert gas includes Lhs step of:
supplying the inert gas so that the washing liquid supplied onto
the substrate is removed from the substrate as the washing liquid
moves outwardly from the center of the substrate.
4. The substrate processing method according to claim 2, wherein
said step of applying the drying processing to the substrate
further includes the step of supplying a rinse liquid onto the
substrate after the supply of the washing liquid and before the
supply of the inert gas.
5. The substrate processing method according to claim 4, wherein
said step of supplying the inert gas includes the step of supplying
the inert gas so that the rinse liquid supplied onto the substrate
is removed from the substrate as the rinse liquid moves outwardly
from the center of the substrate.
6. The substrate processing method according claim 1, wherein said
step of supplying the washing liquid includes the step of supplying
a fluid mixture containing a washing liquid and a gas from a fluid
nozzle of said second processing unit to the substrate.
7. The substrate processing method according to claim 6, wherein
said step of applying the drying processing to the substrate
includes the step of supplying an inert gas from said fluid nozzle
onto the substrate.
8. The substrate processing method according to claim 1, further
comprising the steps of: transporting the substrate after the
washing processing to said exposure device; and transporting the
substrate from said exposure device.
9. The substrate processing method according to claim 8, wherein
said substrate processing apparatus further comprises a first
transport unit including first and second holders, said step of
transporting the substrate to said exposure device includes the
step of holding and transporting the substrate with said first
holder of said first transport unit to said exposure device, and
said step of transporting the substrate from said exposure device
includes the step of holding and transporting the substrate from
said exposure device with said second holder of said first
transport unit.
10. The substrate processing method according to claim 9, wherein
said step of holing and transporting the substrate from said
exposure device includes the step of holding and transporting the
substrate with said second holder that is provided below said first
holder.
11. The substrate processing method according to claim 9, wherein
said step of holding and transporting the substrate to said
exposure device includes the step of holding and transporting the
substrate after the washing processing by said second processing
unit, with said first holder of said first transport unit, to said
exposure device.
12. The substrate processing method according to claim 9, wherein
said substrate processing apparatus further include a second
transport unit and a platform, said method further, comprises the
step of transporting the substrate by said second transport unit
after the washing processing S by said second processing unit and
before the exposure processing by said exposure device to said
platform, and said step of holding and transporting the substrate
to said exposure device includes the step of holding and
transporting the substrate before the exposure processing, mounted
on said platform, with said first holder of said first transport
unit to said exposure device.
13. The substrate processing method according to claim 12, wherein
said step of holing and transporting the substrate from said
exposure device includes the step of holding and transporting the
substrate after the exposure processing by said exposure device
from said exposure device to said platform with said second holder
of said first transport unit, and said method further includes the
step of transporting the substrate after the exposure processing,
mounted on said platform, by said second transport unit.
14. The substrate processing method according to claim 13, wherein
said second transport unit includes third and fourth holders, said
step of transporting the substrate before the exposure processing
to said platform by said second transport unit includes the step of
holding and transporting the substrate after the washing processing
by said second processing unit and before the exposure processing
by said exposure device to said platform, with said third holder of
said second transport unit, and said step of transporting the
substrate after the exposure processing by said second transport
unit includes the step of holding and transporting the substrate
after the exposure processing, mounted on said platform, with said
fourth holder of said second transport unit.
15. The substrate processing method according to claim 14, wherein
said step of transporting the substrate after the exposure
processing by said second transport unit includes the step of
holding and transporting the substrate after the exposure
processing, mounted on said platform, with said fourth holder
provided below said third holder of said second transport unit.
16. The substrate processing method according to claim 15, wherein
said platform includes first and second substrate platforms, said
step of transporting the substrate before the exposure processing
to said platform by said second transport unit includes the step of
holding and transporting the substrate after the washing processing
by said second processing unit and before the exposure processing
by said exposure device to said first substrate platform, with said
third holder of said second transport unit, said step of
transporting the substrate before the exposure processing, mounted
on said plat form to said exposure device: includes the step of
holding and transporting the substrate mounted on said first
substrate platform to said exposure device, with said first holder
of said first transport unit, said step of transporting the
substrate after the exposure processing from said exposure device
to said platform includes the step of transporting the substrate
after the exposure processing from said exposure device to said
second substrate platform by said second holder of said first
transport unit, and said step of transporting the substrate after
the exposure processing, mounted on said plat form includes the
step of holding and transporting the substrate after the exposure
processing, mounted on said second substrate platform, with said
fourth holder of said second transport unit.
17. The substrate processing method according to claim 16, wherein
said substrate processing apparatus further includes a fourth
processing unit, and said step of holding and transporting the
substrate before the exposure processing to said first substrate
plat form, with said third holder of said second transport unit
includes the steps of: transporting the substrate after the washing
processing by said second processing unit and before the exposure
processing by said exposure device to said fourth processing unit,
by said third holder of said second transport unit, applying given
processing to the substrate before the exposure processing,
transported by said second transport unit, by said fourth
processing unit, and transporting the substrate after the
processing by said fourth processing unit to said second substrate
platform by said third holder of said second transport unit.
18. The substrate processing method according to claim 17, wherein
said step of applying the given processing by said fourth
processing unit includes the step of subjecting a peripheral
portion of the substrate to exposure by said fourth processing
unit.
19. The substrate processing method according to claim 1, Wherein
said substrate processing apparatus further includes a fifth
processing unit, and said method further includes the step of
forming an anti-reflection film on the substrate by said fifth
processing unit before the formation of said photosensitive film by
said first processing unit.
Description
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a division of U.S. patent application
Ser. No. 11/295,216, filed Dec. 6, 2005, which claims priority to
Japanese Patent Application No. 2004-353120, filed Dec. 6, 2004,
Japanese Patent Application 2005-095783, filed Mar. 29, 2005, and
Japanese Patent Application No. 2005-267331, filed on Sep. 14,
2005. The disclosures of 11/295,216, JP 2004-353120, 2005-095783,
and JP 2005-267331 are hereby incorporated by reference in their
entirety for all purposes.
[0002] The present application is related to the following four
applications filed Dec. 6, 2005, and commonly owned: 1) U.S. patent
application Ser. No. 11/294,877, entitled "SUBSTRATE PROCESSING
APPARATUS AND SUBSTRATE PROCESSING METHOD," 2) U.S. patent
application Ser. No. 11/295,257, entitled "SUBSTRATE PROCESSING
APPARATUS," 3) U.S. patent application Ser. No. 11/294,727,
entitled "SUBSTRATE PROCESSING APPARATUS," and 4) U.S. patent
application Ser. No. 11/295,240, entitled "SUBSTRATE PROCESSING
APPARATUS AND SUBSTRATE PROCESSING METHOD."
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] The present invention relates to substrate processing
apparatuses for applying processing to substrates.
[0005] 2. Description of the Background Art
[0006] A substrate processing apparatus is used to apply a variety
of processing to substrates such as semiconductor substrates,
substrates for use in liquid crystal displays, plasma displays,
optical disks, magnetic disks, magneto-optical disks, photomasks,
and other substrates.
[0007] Such a substrate processing apparatus typically applies a
plurality of successive processing to a single substrate. The
substrate processing apparatus as described in JP 2003-324139 A
comprises an indexer block, an anti-reflection film processing
block, a resist film processing block, a development processing
block, and an interface block. An exposure device is arranged
adjacent to the interface block as an external device separate from
the substrate processing apparatus.
[0008] In the above-described substrate processing apparatus, a
substrate is carried from the indexer block into the
anti-reflection film processing block and the resist film
processing block, where the formation of an anti-reflection film
and resist film coating processing are applied to the substrate.
The substrate is then carried to the exposure device through the
interface block. After exposure processing has been applied to the
resist film on the substrate by the exposure device, the substrate
is transported to the development processing block through the
interface block. In the development processing block, development
processing is applied to the resist film on the substrate to form a
resist pattern thereon, and the substrate is subsequently carried
into the indexer block.
[0009] With recent improvements in the density and integration of
devices, making finer resist patterns have become very important.
Conventional exposure devices typically perform exposure processing
by providing reduction projection of a reticle pattern on a
substrate through a projection lens. With such conventional
exposure devices, however, the line width of an exposure pattern is
determined by the wavelength of the light source of an exposure
device, thus making it impossible to make a resist pattern finer
than that.
[0010] For this reason, a liquid immersion method is suggested as a
projection exposure method allowing for finer exposure patterns
(refer to, e.g., WO99/49504 pamphlet). In the projection exposure
device according to the WO99/49504 pamphlet, a liquid is filled
between a projection optical system and a substrate, resulting in a
shorter wavelength of exposure light on a surface of the substrate.
This allows for a finer exposure pattern.
[0011] However, in the projection exposure device according to the
aforementioned WO99/49504 pamphlet, exposure processing is
performed with the substrate and the liquid being in contact with
each other. Accordingly, part of the component of a resist applied
on the substrate is eluted in the liquid. The resist component
eluted in the liquid remains on a surface of the substrate, which
may become the cause of a defect.
[0012] The resist component eluted in the liquid contaminates the
lens of the exposure device. This may cause a defective dimension
and a defective shape of the exposure pattern.
SUMMARY OF THE INVENTION
[0013] It is an object of the invention to provide a substrate
processing apparatus capable of preventing a component of a
photosensitive material on a substrate from being eluted in a
liquid in an exposure device.
[0014] (1) A substrate processing apparatus according to one aspect
of the invention that is arranged adjacent to an exposure device
comprises a processing section for applying processing to a
substrate, and an interface that is provided on one end of the
processing section for exchanging the substrate between the
processing section and the exposure device, wherein the processing
section includes a first processing block that includes a first
processing unit that forms a photosensitive film made of
photosensitive material, a first thermal processing unit that
thermally treats the substrate, and a first transport unit that
transports the substrate, a second processing block that includes a
second processing unit that applies a development processing to the
substrate after the exposure processing by the exposure device, a
second thermal processing unit that thermally treats the substrate,
and a second transport unit that transports the substrate, and a
third processing block that includes a third processing unit that
washes the substrate after the formation of the photosensitive film
by the first processing unit and before the exposure processing by
the exposure device, and a third transport unit that transports the
substrate.
[0015] In the substrate processing apparatus, a photosensitive film
made of a photosensitive material is formed on the substrate by the
first processing unit in the first processing block. Then, the
substrate is transported to the first thermal processing unit by
the first transport unit, where the substrate is subjected to given
thermal treatment. The substrate is subsequently transported to an
adjacent other processing block by the first transport unit.
[0016] Next, in the third processing block, the substrate is
subjected to the washing processing by the third processing unit.
Then, the substrate is transported to the exposure device from the
processing section through the interface, where the substrate is
subjected to exposure processing. The substrate after the exposure
processing is subsequently transported to the processing section
from the exposure device through the interface.
[0017] After that, in the second processing block, the substrate is
subjected to development processing in the second processing unit.
Then, the substrate is transported to the second thermal processing
unit by the second transport unit, where the substrate is subjected
to given thermal treatment. The substrate is subsequently
transported to an adjacent other processing block by the second
transport unit.
[0018] In this way, the substrate is subjected to washing
processing by the third processing unit in the third processing
block before the exposure processing by the exposure device. Part
of the component of the photosensitive film formed on the substrate
by the first processing unit is thus eluted, and washed away. In
this case, even if the substrate in contact with a liquid is
subjected to the exposure processing by the exposure device, the
component of the photosensitive material on the substrate is hardly
eluted. This reduces contamination in the exposure device while
preventing the component of the photosensitive material from
remaining on a surface of the substrate. As a result, processing
defects of the substrate that may be generated in the exposure
device can be reduced.
[0019] In addition, the substrate processing apparatus has the
structure in which the third processing block is added to the
existing substrate processing apparatus having the first and second
processing blocks. This results in reduced processing defects of
the substrate that may be generated in the exposure device.
[0020] (2) The third processing block may further include a third
thermal processing unit that thermally treats the substrate, and is
arranged adjacent to the interface. In this case, the washing
processing can be applied to the substrate by the third processing
unit immediately before the exposure processing by the exposure
device. This enables the transport route for the substrate after
the washing processing to the exposure device to be shortened. This
prevents the attachment of particles and the like in the atmosphere
to the substrate in the transport process after the washing
processing.
[0021] In addition, the substrate is subjected to a post-exposure
bake (PEB) by the third thermal processing unit immediately after
the exposure processing, and then the development processing can be
applied to the substrate in the second processing block
subsequently. This makes it possible to smoothly apply the
post-exposure bake and the development processing to the
substrate.
[0022] (3) The processing section further comprises a fourth
processing block that includes a fourth processing unit that forms
an anti-reflection film on the substrate before the formation of
the photosensitive film by the first processing unit, a fourth
thermal processing unit that thermally treats the substrate, and a
fourth transport unit that transports the substrate. In this case,
the anti-reflection film is formed on the substrate by the fourth
processing unit, which prevents the potential standing wave and
halation during the exposure processing. Therefore, the generation
of the processing defects of the substrate during the exposure
processing can be sufficiently reduced.
[0023] (4) The substrate processing apparatus may further comprise
an indexer that is arranged adjacent to another end of the
processing section and carries in the substrate to the processing
section and carries out the substrate from the processing section,
wherein the fourth processing block is arranged adjacent to the
indexer. In this case, the anti-reflection film is formed in the
fourth processing block immediately after the transporting of the
substrate to the processing section, and then the photosensitive
film can be formed in the first processing block subsequently. This
enables the formations of the anti-reflection film and the
photosensitive film on the substrate smoothly.
[0024] (5) The interface may include a fifth processing unit that
applies given processing to the substrate, a platform on which the
substrate is temporarily mounted, a fifth transport unit that
transports the substrate between the processing section, the fifth
processing unit, and the platform, and a sixth transport unit that
transports the substrate between the platform and the exposure
device.
[0025] In this case, the substrate is transported to the fifth
processing unit from the processing section by the fifth transport
unit. The substrate is subjected to the given processing by the
fifth processing unit, and then transported to the platform by the
fifth transport unit. After this, the substrate is transported to
the exposure device from the platform by the sixth transport unit.
The substrate is subjected to the exposure processing by the
exposure device, and then transported to the platform from the
exposure device by the sixth transport unit. After this, the
substrate is transported to the processing section from the
platform by the fifth transport unit.
[0026] In this way, the disposition of the fifth processing unit in
the interface and the transport of the substrate by the two
transport units enables the addition of processing contents without
increasing the footprint of the substrate processing apparatus.
[0027] (6) The fifth transport unit may include first and second
holders for holding the substrate, the fifth transport unit may
hold the substrate with the first holder during the transport of
the substrate before the exposure processing by the exposure
device, and may hold the substrate with the second holder during
the transport of the substrate after the exposure processing by the
exposure device, the sixth transport unit may include third and
fourth holders for holding the substrate, and the sixth transport
unit may hold the substrate with the third holder during the
transport of the substrate before the exposure processing by the
exposure device, and may hold the substrate with the fourth holder
during the transport of the substrate after the exposure processing
by the exposure device.
[0028] In this case, the first and third holders are used during
the transport of the substrate to which no liquid is attached
before the exposure processing, while the second and fourth holders
are used during the transport of the substrate to which a liquid is
attached after the exposure processing. This prevents a liquid from
attaching to the first and third holders, which prevents the
attachment of a liquid to the substrate before the exposure
processing. This makes it possible to prevent contamination of the
substrate due to the attachment of particles and the like in the
atmosphere. As a result, it is possible to prevent contamination in
the exposure device, so that the processing defects of the
substrate that may be generated in the exposure device can be
reduced.
[0029] (7) The second holder may be provided below the first
holder, and the fourth holder may be provided below the third
holder. This prevents a liquid that drops from the second and
fourth holders and substrates held thereon from attaching to the
first and third holders and substrates held thereon. This reliably
prevents a liquid from attaching to the substrate before the
exposure processing.
[0030] (8) The fifth processing unit may include an edge exposure
unit that subjects a peripheral portion of the substrate to
exposure. In this case, the peripheral portion of the substrate is
subjected to the exposure processing by the edge exposure unit.
[0031] (9) The third processing unit may further dry the substrate
after washing the substrate.
[0032] This prevents the attachment of particles and the like in
the atmosphere to the washed substrate. Also, if the washing liquid
remains on the washed substrate, the component of the
photosensitive material may be eluted in the residual washing
liquid. Thus, by drying the washed substrate, it is possible to
prevent the component of the film on the substrate from being
eluted in the washing liquid remaining on the substrate. It is
therefore possible to reliably prevent a defective shape of the
photosensitive film formed on the substrate and the contamination
inside the exposure device. As a result of the foregoing,
processing defects of the substrate are reliably prevented.
[0033] (10) The third processing unit may comprise a substrate
holding device that holds the substrate substantially horizontally,
a rotation-driving device that rotates the substrate held on the
substrate holding device about an axis vertical to the substrate, a
washing liquid supplier that supplies a washing liquid onto the
substrate held on the substrate holding device, and an inert gas
supplier that supplies an inert gas onto the substrate after the
washing liquid has been supplied onto the substrate by the washing
liquid supplier.
[0034] In the third processing unit, the substrate is held on the
substrate holding device substantially horizontally, and the
substrate is rotated about the axis vertical to the substrate by
the rotation-driving device. Then, the washing liquid is supplied
onto the substrate from the washing liquid supplier, followed by
the supply of the inert gas from the inert gas supplier.
[0035] In this case, since the substrate is rotated as the washing
liquid is supplied onto the substrate, the washing liquid on the
substrate moves toward the peripheral portion of the substrate by
the centrifugal force and splashed away. This prevents the
component of the photosensitive material eluted in the washing
liquid from remaining on the substrate. In addition, since the
substrate is rotated as the inert gas is supplied onto the
substrate, the washing liquid remaining on the substrate after the
washing of the substrate is efficiently removed. This reliably
prevents the deposits of particles and the like from remaining on
the substrate and the substrate is reliably dried. Therefore,
during the transport of the washed substrate to the exposure
device, it is possible to reliably prevent the component of
photosensitive material on the substrate from being further eluted
in the washing liquid remaining on the substrate. As a result of
the foregoing, it is possible to reliably prevent a defective shape
of the photosensitive film formed on the substrate and the
contamination inside the exposure device.
[0036] (11) The inert gas supplier may supply the inert gas so that
the washing liquid supplied onto the substrate from the washing
liquid supplier is removed from the substrate as the washing liquid
moves outwardly from the center of the substrate.
[0037] This prevents the washing liquid from remaining on the
center of the substrate, thus reliably preventing the generation of
dry marks (dry stains) on a surface of the substrate. In addition,
during the transport of the washed substrate to the exposure
device, it is possible to reliably prevent the component of
photosensitive material on the substrate from being further eluted
in the washing liquid remaining on the substrate. As a result of
the foregoing, processing defects of the substrate are more
reliably prevented.
[0038] (12) The third processing unit may further comprise a rinse
liquid supplier that supplies a rinse liquid onto the substrate
after the supply of the washing liquid from the washing liquid
supplier and before the supply of the inert gas from the inert gas
supplier.
[0039] This allows the washing liquid to be reliably washed away by
the rinse liquid, making it possible to prevent the component of
the photosensitive material eluted in the washing liquid from
remaining on the substrate more reliably.
[0040] (13) The inert gas supplier may supply the inert gas so that
the rinse liquid supplied onto the substrate from the rinse liquid
supplier is removed from the substrate as the rinse liquid moves
outwardly from the center of the substrate.
[0041] This prevents the rinse liquid from remaining on the center
of the substrate, which prevents the generation of dry marks on the
surface of the substrate reliably. Also, during the transport of
the washed substrate to the exposure device, it is possible to
reliably prevent the component of photosensitive material on the
substrate from being further eluted in the rinse liquid remaining
on the substrate. As a result of the foregoing, it is possible to
prevent processing defects of the substrate more reliably.
[0042] (14) The third processing unit may wash the substrate by
supplying a fluid mixture containing a washing liquid and a gas
onto the substrate from a fluid nozzle.
[0043] Since the fluid mixture discharged from the fluid nozzle
contains fine droplets, any contaminants attached on the surface of
the substrate are stripped off, even if the surface has
irregularities. Moreover, even if the film on the substrate has low
wettability, the fine droplets strip off the contaminants on the
substrate surface.
[0044] Consequently, even if the solvent or the like in the film on
the substrate is sublimated and the sublimates are attached to the
substrate again before the exposure processing, the sublimates
attached to the substrate can be reliably removed by the third
processing unit. It is therefore possible to reliably prevent the
contamination inside the exposure device. As a result of the
foregoing, processing defects of the substrate can be reliably
reduced.
[0045] In addition, adjusting the flow rate of the gas allows
adjustments to be easily made to the detergency in washing the
substrate. Thus, when the film on the substrate is prone to damage,
damage to the film on the substrate can be prevented by weakening
the detergency. Tough contaminants on the substrate surface can
also be removed reliably by strengthening the detergency. By
adjusting the detergency in this way according to the properties of
the film on the substrate and the degree of contamination, it is
possible to prevent damage to the film on the substrate and wash
the substrate reliably.
[0046] (15) The gas may be an inert gas. In this case, it is
possible to prevent a chemical influence upon the film on the
substrate and the washing liquid while removing the contaminants on
the substrate surface more reliably, even if a chemical solution is
used as washing liquid.
[0047] (16) The third processing unit may further dry the substrate
after washing the substrate.
[0048] This prevents the attachment of particles and the like in
the atmosphere to the washed substrate. Also, if the washing liquid
remains on the washed substrate, the component of the film formed
on the substrate may be eluted in the residual washing liquid.
Thus, by drying the washed substrate, it is possible to prevent the
component of the film on the substrate from being eluted in the
washing liquid remaining on the substrate. It is therefore possible
to reliably prevent a defective shape of the photosensitive film
formed on the substrate and the contamination inside the exposure
device. As a result of the foregoing, processing defects of the
substrate are reliably prevented.
[0049] (17) The third processing unit may include an inert gas
supplier that dries the substrate by supplying an inert gas onto
the substrate. The use of the inert gas prevents a chemical
influence upon the film on the substrate and the substrate is
reliably dried.
[0050] (18) The fluid nozzle may function as the inert gas
supplier. In this case, the inert gas is supplied onto the
substrate from the fluid nozzle to apply drying processing to the
substrate. This obviates the need to provide the inert gas supplier
separately from the fluid nozzle. As a result, the washing and
drying processing can be reliably applied to the substrate with a
simple structure.
[0051] (19) The third processing unit may further includes a
substrate holding device that holds the substrate substantially
horizontally, and a rotation-driving device that rotates the
substrate held on the substrate holding device about an axis
vertical to the substrate.
[0052] In the third processing unit, the substrate is held on the
substrate holding device substantially horizontally, and the
substrate is rotated about the axis vertical to the substrate by
the rotation-driving device. Further, the fluid mixture is supplied
onto the substrate from the fluid nozzle, followed by the supply of
the inert gas from the inert gas supplier.
[0053] In this case, since the substrate is rotated as the fluid
mixture is supplied onto the substrate, the fluid mixture on the
substrate moves toward the peripheral portion of the substrate by
the centrifugal force and splashed away. This reliably prevents the
deposits of particles and the like removed by the fluid mixture
from remaining on the substrate. In addition, since the substrate
is rotated as the inert gas is supplied onto the substrate, the
fluid mixture remaining on the substrate after the washing of the
substrate is efficiently removed. This reliably prevents the
deposits of particles and the like from remaining on the substrate
and the substrate dried reliably. As a result, processing defects
of the substrate are prevented reliably.
[0054] (20) The third processing unit may supply the inert gas so
that the fluid mixture supplied onto the substrate from the fluid
nozzle is removed from the substrate as the fluid mixture moves
outwardly from the center of the substrate.
[0055] This prevents the fluid mixture from remaining on the center
of the substrate, thus reliably preventing the generation of dry
marks on a surface of the substrate. Accordingly, processing
defects of the substrate are prevented reliably.
[0056] (21) The third processing unit may further include a rinse
liquid supplier that supplies a rinse liquid onto the substrate,
after the supply of the fluid mixture from the fluid nozzle and
before the supply of the inert gas from the inert gas supplier.
[0057] This allows the fluid mixture to be reliably washed away by
the rinse liquid, thus reliably preventing the deposits of
particles and the like from remaining on the substrate.
[0058] (22) The fluid nozzle may function as the rinse liquid
supplier. In this case, the rinse liquid is supplied from the fluid
nozzle. This obviates the need to provide the rinse liquid supplier
separately from the fluid nozzle. As a result, the washing and
drying processing can be reliably applied to the substrate with a
simple structure.
[0059] (23) The third processing unit may supply the inert gas so
that the rinse liquid supplied onto the substrate from the rinse
liquid supplier is removed from the substrate as the rinse liquid
moves outwardly from the center of the substrate.
[0060] This prevents the rinse liquid from remaining on the center
of the substrate, thus reliably preventing the generation of dry
marks on the surface of the substrate. Accordingly, processing
defects of the substrate are prevented reliably.
[0061] (24) The fluid nozzle may have a liquid flow passage through
which a liquid flows, a gas flow passage through which a gas flows,
a liquid discharge port having an opening that communicates with
the liquid flow passage, and a gas discharge port that is provided
near the liquid discharge port and has an opening that communicates
with the gas flow passage.
[0062] In this case, the washing liquid flows through the liquid
flow passage, and is discharged from the liquid discharge port,
while the gas flows through the gas flow passage, and is discharged
from the gas discharge port. The washing liquid and gas are mixed
outside the fluid nozzle. A mist-like fluid mixture is thus
generated.
[0063] In this way, the fluid mixture is generated by mixing the
washing liquid and the gas outside the fluid nozzle. This obviates
the need to provide space for mixing the washing liquid and the gas
inside the fluid nozzle. As a result, the size of the fluid nozzle
can be reduced.
[0064] According to the invention, the substrate is washed in the
third processing block before the exposure processing by the
exposure device. In this case, even if the substrate in contact
with a liquid is subjected to the exposure processing by the
exposure device, the component of the photosensitive material on
the substrate is hardly eluted. This prevents contamination inside
the exposure device while preventing the component of the
photosensitive material from remaining on a surface of the
substrate. As a result, processing defects of the substrate that
may be generated in the exposure device can be reduced.
[0065] The foregoing and other objects, features, aspects and
advantages of the present invention will become more apparent from
the following detailed description of the present invention when
taken in conjunction with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0066] FIG. 1 is a plan view of a substrate processing apparatus
according to a first embodiment of the invention;
[0067] FIG. 2 is a side view of the substrate processing apparatus
in FIG. 1 that is seen from the +X direction;
[0068] FIG. 3 is a side view of the substrate processing apparatus
in FIG. 1 that is seen from the -X direction;
[0069] FIG. 4 is a diagram for use in illustrating the
configuration of a washing processing unit;
[0070] FIGS. 5 (a), 5 (b), and 5 (c) are diagrams for use in
illustrating the operation of the washing processing unit;
[0071] FIG. 6 is a schematic diagram of a nozzle in which a nozzle
for washing processing and a nozzle for drying processing are
formed integrally;
[0072] FIG. 7 is a schematic diagram showing another example of the
nozzle for drying processing;
[0073] FIGS. 8 (a), 8 (b), and 8 (c) are diagrams for use in
illustrating a method of applying drying processing to a substrate
using the nozzle in FIG. 7;
[0074] FIG. 9 is a schematic diagram showing another example of the
nozzle for drying processing;
[0075] FIG. 10 is a schematic diagram showing another example of
the drying processing unit;
[0076] FIG. 11 is a diagram for use in illustrating a method of
applying drying processing to the substrate using the drying
processing unit in FIG. 10;
[0077] FIG. 12 is a diagram for use in illustrating the
configuration and the operation of the interface transport
mechanism.
[0078] FIG. 13 is a longitudinal cross section showing an example
of the internal structure of a two-fluid nozzle for use in washing
and drying processing; and
[0079] FIGS. 14 (a), 14 (b), and 14 (c) are diagrams for use in
illustrating a method of applying drying processing to the
substrate using the two-fluid nozzle in FIG. 13.
DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS
[0080] A substrate processing apparatus according to an embodiment
of the invention will be described with reference to the drawings.
A substrate as used in the specification includes a semiconductor
substrate, a substrate for a liquid crystal display, a substrate
for a plasma display, a glass substrate for a photomask, a
substrate for an optical disk, a substrate for a magnetic disk, a
substrate for a magneto-optical disk, and a substrate for a
photomask.
[0081] FIG. 1 is a plan view of the semiconductor laser apparatus
according to the embodiment of the invention.
[0082] Each of FIG. 1 and the subsequent drawings is accompanied by
the arrows that indicate
[0083] X, Y, and Z directions perpendicular to one another for
clarification of positions. The X and Y directions are
perpendicular to each other in a horizontal plane, and the Z
direction corresponds to the vertical direction. In each of the
directions, the direction toward an arrow is defined as +
direction, and the opposite direction is defined as - direction.
The rotation direction about the Z direction is defined as .theta.
direction.
[0084] As shown in FIG. 1, the substrate processing apparatus 500
includes an indexer block 9, an anti-reflection film processing
block 10, a resist film processing block 11, a development
processing block 12, a washing processing block 13, and an
interface block 14. An exposure device 15 is arranged adjacent to
the interface block 14. The exposure device 15 applies exposure
processing to substrates W by a liquid immersion method.
[0085] Each of the indexer block 9, the anti-reflection film
processing block 10, the resist film processing block 11, the
development processing block 12, the washing processing block 13,
and the interface block 14 will hereinafter be referred to as a
processing block.
[0086] The indexer block 9 includes a main controller (controller)
30 for controlling the operation of each processing block, a
plurality of carrier platforms 40, and an indexer robot IR. The
indexer robot IR has a hand IRH for receiving and transferring the
substrates W.
[0087] The anti-reflection film processing block 10 includes
thermal processing groups 100, 101 for anti-reflection film, a
coating processing group 50 for anti-reflection film, and a first
central robot CR1. The coating processing group 50 is arranged
opposite to the thermal processing groups 100, 101 with the first
central robot CR1 therebetween. The first central robot CR1 has
hands CRH1, CRH2 provided one above the other for receiving and
transferring the substrates W.
[0088] A partition wall 17 is arranged between the indexer block 9
and the anti-reflection film processing block 10 for shielding an
atmosphere. The partition wall 17 has substrate platforms PASS1,
PASS2 provided closely one above the other for receiving and
transferring the substrates W between the indexer block 9 and the
anti-reflection film processing block 10. The upper substrate
platform PASS1 is used in transferring the substrates W from the
indexer block 9 to the anti-reflection film processing block 10,
and the lower substrate platform PASS2 is used in transferring the
substrates W from the anti-reflection film processing block 10 to
the indexer block 9.
[0089] Each of the substrate platforms PASS1, PASS2 has an optical
sensor (not shown) for detecting the presence or absence of a
substrate W. This enables a determination to be made whether or not
a substrate W is on the substrate platform PASS1, PASS2. In
addition, each of the substrate platforms PASS1, PASS2 has a
plurality of support pins secured thereto. Note that each of
substrate platforms PASS3 to PASS12 mentioned below similarly has
such an optical sensor and support pins.
[0090] The resist film processing block 11 includes thermal
processing groups 110, 111 for resist film, a coating processing
group 60 for resist film, and a second central robot CR2. The
coating processing group 60 is arranged opposite to the thermal
processing groups 110, 111 with the second central robot CR2
therebetween. The second central robot CR2 has hands CRH3, CRH4
provided one above the other for receiving and transferring the
substrates W.
[0091] A partition wall 18 is arranged between the anti-reflection
film processing block 10 and the resist film processing block 11
for shielding an atmosphere. The partition wall 18 has substrate
platforms PASS3, PASS4 provided closely one above the other for
receiving and transferring the substrates W between the
anti-reflection film processing block 10 and the resist film
processing block 11. The upper substrate platform PASS3 is used in
transferring the substrates W from the anti-reflection film
processing block 10 to the resist film processing block 11. The
lower substrate platform PASS4 is used in transferring the
substrates W from the resist film processing block 11 to the
anti-reflection film processing block 10.
[0092] The development processing block 12 includes thermal
processing groups 120, 121 for development, a development
processing group 70, and a third central robot CR3. The development
processing group 70 is arranged opposite to the thermal processing
groups 120, 121 with the third central robot therebetween. The
third central robot CR3 has hands CRH5, CRH6 provided one above the
other for receiving and transferring the substrates W.
[0093] A partition wall 19 is arranged between the resist film
processing block 11 and the development processing block 12 for
shielding an atmosphere. The partition wall 19 has substrate
platforms PASS5, PASS6 provided closely one above the other for
receiving and transferring the substrates W between the resist film
processing block 11 and the development processing block 12. The
upper substrate platform PASS5 is used in transferring the
substrates W from the resist film processing block 11 to the
development processing block 12, and the lower substrate platform
PASS6 is used in transferring the substrates W from the development
processing block 12 to the resist film processing block 11.
[0094] The washing processing block 13 includes thermal processing
groups 130, 131 for post-exposure bake (PEB), a washing processing
group 80, and a fourth central robot CR4. The thermal processing
group 131, adjacent to the interface block 14, comprises the
substrate platforms PASS9, PASS10 as described below. The washing
processing group 80 is arranged opposite to the thermal processing
groups 130, 131 with the fourth central robot CR4 therebetween. The
fourth central robot CR4 has hands CRH7, CRH8 provided one above
the other for receiving and transferring the substrates W.
[0095] A partition wall 20 is arranged between the development
processing block 12 and the washing processing block 13 for
shielding an atmosphere. The partition wall 20 has substrate
platforms PASS7, PASS8 provided closely one above the other for
receiving and transferring the substrates W between the development
processing block 12 and the washing processing block 13. The upper
substrate platform PASS7 is used in transferring the substrates W
from the development processing block 12 to the washing processing
block 13, and the lower substrate platform PASS8 is used in
transferring the substrates W from the washing processing block 13
to the development processing block 12.
[0096] The interface block 14 includes a fifth central robot CR5, a
buffer unit SBF, an interface transport mechanism IFR, and edge
exposure units EEW. Return buffer units RBF and substrate platforms
PASS11, PASS12 mentioned below are provided under the edge exposure
units EEW. The fifth central robot CR5 has hands CRH9, CRH10
provided one above the other for receiving and transferring the
substrates W, and the interface transport mechanism IFR has hands
CRH5, CRH6 provided one above the other for receiving and
transferring the substrates W
[0097] In the substrate processing apparatus 500 according to this
embodiment, the indexer block 9, the anti-reflection film
processing block 10, the resist film processing block 11, the
development processing block 12, the washing processing block 13,
and the interface block 14 are sequentially arranged in parallel
along the Y direction.
[0098] FIG. 2 is a side view of the substrate processing apparatus
500 in FIG. 1 that is seen from the +X direction.
[0099] The coating processing group 50 in the anti-reflection film
processing block 10 (see FIG. 1) includes a vertical stack of three
coating units BARC. Each of the coating units BARC comprises a spin
chuck 51 for rotating a substrate W while holding the substrate W
in a horizontal attitude by suction, and a supply nozzle 52 for
supplying coating liquid for anti-reflection film to the substrate
W held on the spin chuck 51.
[0100] The coating processing group 60 in the anti-reflection film
processing block 11 (see FIG. 1) includes a vertical stack of three
coating units RES. Each of the coating units RES comprises a spin
chuck 61 for rotating a substrate W while holding the substrate Win
a horizontal attitude by suction, and a supply nozzle 62 for
supplying coating liquid for anti-reflection film to the substrate
W held on the spin chuck 61.
[0101] The development processing group 70 in the development
processing block 12 (see FIG. 1) includes a vertical stack of five
development processing units DEV. Each of the development
processing units DEV comprises a spin chuck 71 for rotating a
substrate W while holding the substrate W in a horizontal attitude
by suction, and a supply nozzle 72 for supplying development liquid
to the substrate W held on the spin chuck 71.
[0102] The washing processing group 80 in the washing processing
block 13 (see FIG. 1) includes a vertical stack of three washing
processing units SOAK. Each of the washing processing units SOAK
applies washing and drying processing to a substrate W. The washing
processing units SOAK will be described in detail below.
[0103] The interface block 14 includes a vertical stack of the two
edge exposure units EEW, return buffer unit RBF, substrate
platforms PASS11, PASS12, and also includes the fifth central robot
CR5 (see FIG. 1) and interface transport mechanism IFR. Each of the
edge exposure units EEW comprises a spin chuck 98 for rotating a
substrate W while holding the substrate W in a horizontal attitude
by suction, and a light irradiator 99 for subjecting a peripheral
edge of the substrate W held on the spin chuck 98 to exposure.
[0104] FIG. 3 is a side view of the substrate processing apparatus
500 in FIG. 1 that is seen from the -X direction.
[0105] In the anti-reflection film processing block 10, the thermal
processing group 100 includes a vertical stack of two cooling units
(cooling plates) CP, and the thermal processing unit 101 includes a
vertical stack of four heating units (hot plates) HP and two
cooling units CP. The thermal processing group 100 also includes a
local controller LC on top thereof for controlling the temperatures
of the cooling units CP, and the thermal processing group 101 also
includes a local controller LC on top thereof for controlling the
temperatures of the heating units HP and the cooling units CP.
[0106] In the resist film processing block 11, the thermal
processing group 110 includes a vertical stack of four cooling
units CP, and the thermal processing group 111 includes a vertical
stack of four heating units HP. The thermal processing group 110
also includes a local controller LC on top thereof for controlling
the temperatures of the cooling units CP, and the thermal
processing group 111 also includes a local controller LC on top
thereof for controlling the temperatures of the heating units
HP.
[0107] In the washing processing block 13, the thermal processing
group 130 includes a vertical stack of two heating units HP and two
cooling units CP, and the thermal processing group 131 includes a
vertical stack of four heating units HP, a cooling unit CP, the
substrate platforms PASS9, PASS10, and a cooling unit CP. The
thermal processing group 130 also includes a local controller LC on
top thereof for controlling the temperatures of the heating units
HP and the cooling units CP, and the thermal processing group 131
also includes a local controller LC on top thereof for controlling
the temperatures of the heating units HP and the cooling units
CP.
[0108] Next, the operation of the substrate processing apparatus
500 in this embodiment will be described.
[0109] Carriers C for storing the substrates W in multiple stages
are mounted on the carrier platforms 40, respectively, in the
indexer block 9. The indexer robot IR takes out a substrate W yet
to be processed which is stored in a carrier C using the hand IRH
for receiving and transferring the substrates W. Then, the indexer
robot IR moves in the .+-.X direction while rotating in the
.+-..theta. direction to transfer the unprocessed substrate W onto
the substrate platform PASS1.
[0110] Although FOUPs (Front Opening Unified Pods) are adopted as
the carriers C in this embodiment, SMIF (Standard Mechanical Inter
Face) pods or OCs (Open Cassettes) that expose stored substrates W
to outside air may also be used, for example. In addition, although
linear-type transport robots that move their hands forward or
backward by sliding them linearly to a substrate W are used as the
indexer robot IR, the first central robot CR1 to the fifth central
robot CR5, and the interface transport mechanism IFR, multi joint
type transport robots that linearly move their hands forward and
backward by moving their joints may also be used.
[0111] The unprocessed substrate W that has been transferred onto
the substrate platform PASS1 is received by the first central robot
CR1 in the anti-reflection film processing block 10. The first
central robot CR1 carries the substrate W into the thermal
processing group 100 or 101. After this, the first central robot
CR1 takes out the thermally treated substrate W from the thermal
processing group 100 or 101, and then carries the substrate W into
the coating processing group 50. The coating processing group 50
forms a coating of an anti-reflection film over a lower portion of
a photoresist film using a coating unit BARC, in order to reduce a
standing wave and halation that may be generated during
exposure.
[0112] The first central robot CR1 subsequently takes out the
substrate W after the coating processing from the coating
processing group 50, and carries the substrate W into the thermal
processing group 100 or 101. Then, the first central robot CR1
takes out the thermally treated substrate W from the thermal
processing group 100 or 101, and transfers the substrate W onto the
substrate platform PASS3.
[0113] The substrate W on the substrate platform PASS3 is received
by the second central robot CR2 in the resist film processing block
11. The second central robot CR2 carries the substrate W into the
thermal processing group 110 or 111. The second central robot CR2
then takes out the thermally treated substrate W from the thermal
processing group 110 or 111, and carries the substrate W into the
coating processing group 60. In the coating processing group 60, a
coating unit RES forms a coating of a resist film over the
substrate W that is coated with the anti-reflection film.
[0114] After this, the second central robot CR2 takes out the
substrate W after the coating processing from the coating
processing group 60, and carries the substrate W into the thermal
processing group 110 or 111. Then, the second central robot CR2
takes out the thermally treated substrate W from the thermal
processing group 110 or 111, and transfers the substrate W onto the
substrate platform PASS5.
[0115] The substrate W on the substrate platform PASS5 is received
by the third central robot CR3 in the development processing block
12. The third central robot CR3 transfers the substrate W onto the
substrate platform PASS7.
[0116] The substrate W on the substrate platform PASS7 is received
by the fourth central robot CR4 in the washing processing block 13.
The fourth central robot CR4 carries the substrate W into the
washing processing group 80. As described above, in the washing
processing group 80, the substrate W is subjected to the washing
and drying processing by the washing processing unit SOAK.
[0117] The fourth central robot CR4 then takes out the substrate W
after the washing processing from the washing processing unit 80,
and transfers the substrate W to the substrate platform PASS9. The
substrate W on the substrate platform PASS9 is received by the
upper hand CRH9 of the fifth central robot CR5 in the interface
block 14. The fifth central robot CR5 carries the substrate W into
an edge exposure unit EEW with the hand CRH9. The edge exposure
unit EEW subjects the peripheral portion of the substrate W to
exposure processing.
[0118] Next, the fifth central robot CR5 takes out the substrate W
after the edge exposure processing from the edge exposure unit EEW
with the hand CRH9. Then, the fifth central robot CR5 transfers the
substrate W onto the substrate platform PASS11 with the hand
CRH9.
[0119] The substrate W transferred onto the substrate platform
PASS11 is carried into the exposure device 15 by the interface
transport mechanism IFR. The substrate W is subjected to exposure
processing by the exposure device 15, and then transferred onto the
substrate platform PASS12 by the interface transport mechanism IFR.
The interface transport mechanism IFR will be described in detail
below.
[0120] The substrate Won the substrate platform PASS12 is received
by the lower hand CRH10 of the fifth central robot CR5 in the
interface block 14. The fifth central robot CR5 carries the
substrate W into the thermal processing group 131 in the washing
processing block 13 with the hand CRH10. The substrate W is
subjected to a post-exposure bake (PEB) by the thermal processing
group 131. In addition, the substrate W may also be subject to a
post-exposure bake by the thermal processing group 130.
[0121] After this, the fifth central robot CR5 takes out the
substrate W after the thermal processing from the thermal
processing group 131, and transports the substrate W onto the
substrate platform PASS10. The substrate W on the substrate
platform PASS10 is received by the fourth central robot CR4 in the
washing processing block 13. The fourth central robot CR4
transports the substrate W onto the substrate platform PASS8.
[0122] The substrate W on the substrate platform PASS8 is received
by the third central robot CR3 in the development processing block
12. The third central robot CR3 carries the substrate W into the
development processing group 70. The exposed substrate W is
subjected to development processing by the development processing
group 70. Then, the third central robot CR3 takes out the substrate
W after the development processing from the development processing
group 70, and carries the substrate W into the thermal processing
groups 120, 121.
[0123] Then, the third central robot CR3 takes out the thermally
treated substrate W from the thermal processing groups 120, 120,
and transport the substrate W onto the substrate platform PASS6.
The substrate W on the platform PASS6 is transferred onto substrate
platform PASS4 by the second central robot CR2 in the processing
block 11. The substrate W on the platform PASS4 is transferred onto
substrate platform PASS2 by the first central robot CR2 in the
processing block 10.
[0124] The substrate W on the substrate platform PASS2 is stored in
a carrier C by the indexer robot IR in the indexer block 9. Each of
the processing to the substrate W in the substrate processing
apparatus 500 is thus completed.
[0125] If the development processing group 80 is temporarily not
capable of applying development processing to the substrate W by,
e.g., a failure, the substrate W may temporarily be stored in the
return buffer RBF1 in the interface block 14 after the thermal
treatment in the thermal processing group 131.
[0126] Now, the aforementioned washing processing units SOAK will
be described in detail with reference to drawings.
[0127] The configuration of a washing processing unit SOAK is first
described. FIG. 4 is a diagram for use in illustrating the
configuration of the washing processing unit SOAK.
[0128] As shown in FIG. 4, the washing processing unit SOAK
comprises a spin chuck 621 for rotating a substrate W about the
vertical rotation axis passing through the center of the substrate
W while horizontally holding the substrate W.
[0129] The spin chuck 621 is secured to an upper end of a rotation
shaft 625, which is rotated via a chuck rotation-drive mechanism
636. An air suction passage (not shown) is formed in the spin chuck
621. With the substrate W being mounted on the spin chuck 621, air
inside the air suction passage is discharged, so that a lower
surface of the substrate W is sucked onto the spin chuck 621 by
vacuum, and the substrate W can be held in a horizontal
attitude.
[0130] A first rotation motor 660 is arranged outside the spin
chuck 621. The first rotation motor 660 is connected to a first
rotation shaft 661. The first rotation shaft 661 is coupled to a
first arm 662, which extends in the horizontal direction, and whose
end is provided with a nozzle 650 for washing processing.
[0131] The first rotation shaft 661 is rotated by the first
rotation motor 660, so that the first arm 662 swings. This causes
the nozzle 650 to move above the substrate W held on the spin chuck
621.
[0132] A supply pipe 663 for washing processing is arranged so as
to pass through the inside of the first rotation motor 660, the
first rotation shaft 661, and the first arm 662. The supply pipe
663 is connected to a washing liquid supply source R1 and a rinse
liquid supply source R2 through a valve Va and a valve Vb,
respectively. By controlling the opening and closing of the valves
Va, Vb, it is possible to select a processing liquid supplied to
the supply pipe 663 and adjust the amount of the processing liquid.
In the configuration of FIG. 4, when the valve Va is opened,
washing liquid is supplied to the supply pipe 663, and when the
valve Vb is opened, rinse liquid is supplied to the supply pipe
663.
[0133] The washing liquid or the rinse liquid is supplied to the
nozzle 650 through the supply pipe 663 from the washing liquid
supply source R1 or the rinse liquid supply source R2. The washing
liquid or the rinse liquid is thus supplied to a surface of the
substrate W. Examples of the washing liquid may include pure water,
a pure water solution containing a complex (ionized), or a
fluorine-based chemical solution. Examples of the rinse liquid may
include pure water, carbonated water, hydrogen water, electrolytic
ionic water, and HFE (hydrofluoroether).
[0134] A second rotation motor 671 is arranged outside the spin
chuck 621. The second rotation motor 671 is connected to a second
rotation shaft 672. The second rotation shaft 672 is coupled to a
second arm 673, which extends in the horizontal direction, and
whose end is provided with a nozzle 670 for drying processing.
[0135] The second rotation shaft 672 is rotated by the second
rotation motor 671, so that the second arm 673 swings. This causes
the nozzle 670 to move above the substrate W held on the spin chuck
621.
[0136] A supply pipe 674 for drying processing is arranged so as to
pass through the inside of the second rotation motor 671, the
second rotation shaft 672, and the second arm 673. The supply pipe
674 is connected to an inert gas supply source R3 through a valve
Vc. By controlling the opening and closing of the valve Vc, it is
possible to adjust the amount of the inert gas supplied to the
supply pipe 674.
[0137] The inert gas is supplied to the nozzle 670 through the
supply pipe 674 from the inert gas supply source R3. The inert gas
is thus supplied to the surface of the substrate W. Nitrogen gas
(N.sub.2), for example, may be used as the inert gas.
[0138] When supplying the washing liquid or the rinse liquid onto
the surface of the substrate W, the nozzle 650 is positioned above
the substrate. When supplying the inert gas onto the surface of the
substrate W, the nozzle 650 is retracted to a predetermined
position.
[0139] When supplying the washing liquid or the rinse liquid onto
the surface of the substrate W, the nozzle 670 is retracted to a
predetermined position. When supplying the inert gas onto the
surface of the substrate W, the nozzle 670 is positioned above the
substrate W.
[0140] The substrate W held on the spin chuck 621 is housed in a
processing cup 623. A cylindrical partition wall 633 is provided
inside the processing cup 623. A discharge space 631 is formed so
as to surround the spin chuck 621 for discharging the processing
liquid (i.e., washing liquid or rinse liquid) used in processing
the substrate W. Also, a liquid recovery space 632 is formed
between the processing cup 623 and the partition wall 633, so as to
surround the discharge space 631, for recovering the processing
liquid used in processing the substrate W.
[0141] The discharge space 631 is connected with a discharge pipe
634 for directing the processing liquid to a liquid discharge
processing device (not shown), while the liquid recovery space 632
is connected with a recovery pipe 635 for directing the processing
liquid to a recovery processing device (not shown).
[0142] A guard 624 is provided above the processing cup 623 for
preventing the processing liquid on the substrate W from splashing
outward. The guard 624 is configured to be rotation-symmetric with
respect to the rotation shaft 625. An annular-shaped liquid
discharge guide groove 641 with a V-shaped cross section is formed
inwardly of an upper end portion of the guard 624.
[0143] Also, a liquid recovery guide 642 having an inclined surface
that inclines down outwardly is formed inwardly of a lower portion
of the guard 624. A partition wall housing groove 643 for receiving
the partition wall 633 in the processing cup 623 is formed in the
vicinity of the upper end of the liquid recovery guide 642.
[0144] This guard 624 is provided with a guard lifting mechanism
(not shown) composed of a ball-screw mechanism or the like. The
guard lifting mechanism lifts and lowers the guard 624 between a
recovery position in which the liquid recovery guide 642 is
positioned opposite to outer edges of the substrate W held on the
spin chuck 621 and a discharge position in which the liquid
discharge guide groove 641 is positioned opposite to the outer
edges of the substrate W held on the spin chuck 621. When the guard
624 is in the recovery position (i.e., the position of the guard
shown in FIG. 4), the processing liquid splashed out from the
substrate W is directed by the liquid recovery guide 642 to the
liquid recovery space 632, and then recovered through the recovery
pipe 635. On the other hand, when the guard 624 is in the discharge
position, the processing liquid splashed out from the substrate W
is directed by the liquid discharge guide groove 641 to the
discharge space 631, and then discharged through the discharge pipe
634. With such a configuration, discharge and recovery of the
processing liquid is performed.
[0145] The processing operation of the washing processing unit SOAK
having the aforementioned configuration is next described. Note
that the operation of each component in the washing processing unit
SOAK described below is controlled by the main controller 30 in
FIG. 1.
[0146] When the substrate W is initially carried into the washing
processing unit SOAK, the guard 624 is lowered, and the fourth
central robot CR4 in FIG. 1 places the substrate W onto the spin
chuck 621. The substrate W on the spin chuck 621 is held by
suction.
[0147] Next, the guard 624 moves to the aforementioned discharge
position, and the nozzle 650 moves above the center of the
substrate W. Then, the rotation shaft 625 rotates, causing the
substrate W held on the spin chuck 621 to rotate. After this, the
washing liquid is discharged onto the top surface of the substrate
W from the nozzle 650. The substrate W is thus washed, and part of
the component of the resist on the substrate W is eluted in the
washing liquid. During the washing, the substrate W is rotated as
the washing liquid is supplied onto the substrate W. This causes
the washing liquid on the substrate W to constantly move toward a
peripheral portion of the substrate W by the centrifugal force, and
splashed away. It is therefore possible to prevent the component of
the resist eluted in the washing liquid from remaining on the
substrate W. Note that the aforementioned resist component may be
eluted with pure water being poured onto the substrate Wand kept
thereon for a certain period. The supply of the washing liquid onto
the substrate W may also be executed by a soft spray method using a
two-fluid nozzle.
[0148] After the elapse of a predetermined time, the supply of the
washing liquid is stopped, and the rinse liquid is discharged from
the nozzle 650. The washing liquid on the substrate W is thus
washed away. As a result, it is possible to reliably prevent the
resist components eluted in the washing liquid from remaining on
the substrate W.
nAfter the elapse of another predetermined time, the rotation speed
of the rotation shaft 625 decreases. This reduces the amount of the
rinse liquid that is shaken off by the rotation of the substrate W,
resulting in the formation of a liquid layer L of the rinse liquid
over the entire surface of the substrate W, as shown in FIG. 5 (a).
Alternatively, the rotation of the rotation shaft 625 may be
stopped to form the liquid layer L over the entire surface of the
substrate W.
[0149] The embodiment employs the configuration in which the nozzle
650 is used for supplying both the washing liquid and the rinse
liquid, so as to supply both the washing liquid and the rinse
liquid from the nozzle 650. However, a configuration may also be
employed in which nozzles are separately provided for supplying the
washing liquid and the rinse liquid.
[0150] In order to prevent the rinse liquid from flowing to the
back surface of the substrate W during the supply of the rinse
liquid, pure water may be supplied to the back surface of the
substrate W using a back rinsing nozzle (not shown).
[0151] Note that when using pure water as the washing liquid for
washing the substrate W, it is not necessary to supply the rinse
liquid.
[0152] The supply of the rinse liquid is subsequently stopped, and
the nozzle 650 retracts to the predetermined position while the
nozzle 670 moves above the center of the substrate W. The inert gas
is subsequently discharged from the nozzle 670. This causes the
rinse liquid around the center of the substrate W to move toward
the peripheral portion of the substrate W, leaving the liquid layer
L only on the peripheral portion, as shown in FIG. 5 (b).
[0153] Next, as the number of revolutions of the rotation shaft 625
(see FIG. 4) increases, the nozzle 670 gradually moves from above
the center of the substrate W to above the peripheral portion
thereof, as shown in FIG. 5 (c). This causes a great centrifugal
force acting on the liquid layer L on the substrate W while
allowing the inert gas to be sprayed toward the entire surface of
the substrate W, thereby ensuring the removal of the liquid layer L
on the substrate W. As a result, the substrate W can be reliably
dried.
[0154] Then, the supply of the inert gas is stopped, and the nozzle
670 retracts to the predetermined position while the rotation of
the rotation shaft 625 is stopped. After this, the guard 624 is
lowered, and the fourth central robot CR4 in FIG. 1 carries the
substrate W out of the washing processing unit SOAK. The processing
operation of the washing processing unit SOAK is thus
completed.
[0155] It is preferred that the position of the guard 624 during
washing and drying processing is suitably changed according to the
necessity of the recovery or discharge of the processing
liquid.
[0156] Moreover, although the washing processing unit SOAK shown in
FIG. 4 includes the nozzle 650 for washing processing and the
nozzle 670 for drying processing separately, the nozzle 650 and the
nozzle 670 may also be formed integrally, as shown in FIG. 6. This
obviates the need to move each of the nozzle 650 and the nozzle 670
separately during the washing or drying processing to the substrate
W, thereby simplifying the driving mechanism.
[0157] A nozzle 770 for drying processing as shown in FIG. 7 may
also be used instead of the nozzle 670 for drying processing.
[0158] The nozzle 770 in FIG. 7 extends vertically downward, and
also has branch pipes 771, 772 that extend obliquely downward from
sides thereof. A gas discharge port 770a is formed at the lower end
of the branch pipe 771, a gas discharge port 770b at the lower end
of the nozzle 770, and a gas discharge port 770c at the lower end
of the branch pipe 772, each for discharging an inert gas. The
discharge port 770b discharges an inert gas vertically downward,
and the discharge ports 770a, 770c each discharge an inert gas
obliquely downward, as indicated by the arrows in FIG. 7. That is
to say, the nozzle 770 discharges the inert gas so as to increase
the spraying area downwardly.
[0159] Now, a washing processing unit SOAK using the nozzle 770 for
drying processing applies drying processing to the substrate W as
will be described below.
[0160] FIGS. 8 (a), 8 (b), 8 (c) are diagrams for use in
illustrating a method of applying drying processing to the
substrate W using the nozzle 770.
[0161] Initially, a liquid layer L is formed on a surface of the
substrate W by the method as described in FIG. 5 (a), and then the
nozzle 770 moves above the center of the substrate W, as shown in
FIG. 8 (a). After this, an inert gas is discharged from the nozzle
770. This causes the rinse liquid on the center of the substrate W
to move to the peripheral portion of the substrate W, leaving the
liquid layer L only on the peripheral portion of the substrate W,
as shown in FIG. 8 (b). At the time, the nozzle 770 is brought
close to the surface of the substrate W so as to reliably move the
rinse liquid present on the center of the substrate W.
[0162] Next, as the number of revolutions of the rotation shaft 625
(see FIG. 4) increases, the nozzle 770 moves upward as shown in
FIG. 8 (c). This causes a great centrifugal force acting on the
liquid layer L on the substrate W while increasing the area to
which the inert gas is sprayed on the substrate W. As a result, the
liquid layer L on the substrate W can be reliably removed. Note
that the nozzle 770 can be moved up and down by lifting and
lowering the second rotation shaft 672 via a rotation shaft lifting
mechanism (not shown) provided to the second rotation shaft 672 in
FIG. 4.
[0163] Alternatively, a nozzle 870 for drying processing as shown
in FIG. 9 may be used instead of the nozzle 770. The nozzle 870 in
FIG. 9 has a discharge port 870a whose diameter gradually increases
downward. This discharge port 870a discharges an inert gas
vertically downward and obliquely downward as indicated by the
arrows in FIG. 9. That is, similarly to the nozzle 770 in FIG. 7,
the nozzle 870 discharges the inert gas so as to increase the
spraying area downwardly. Consequently, drying processing similar
to that using the nozzle 770 can be applied to the substrate W
using the nozzle 870.
[0164] A washing processing unit SOAKa as shown in FIG. 10 may also
be used instead of the washing processing unit SOAK shown in FIG.
4.
[0165] The washing processing unit SOAKa in FIG. 10 is different
from the washing processing unit SOAK in FIG. 4 as described
below.
[0166] The washing processing unit SOAKa in FIG. 10 includes above
the spin chuck 621a disk-shaped shield plate 682 having an opening
through the center thereof. A support shaft 689 extends vertically
downward from around an end of an arm 688, and the shield plate 682
is mounted at a lower end of the support shaft 689 so as to oppose
the top surface of the substrate W held on the spin chuck 621.
[0167] A gas supply passage 690 that communicates with the opening
of the shield plate 682 is inserted into the inside of the support
shaft 689. A nitrogen gas (N.sub.2), for example, is supplied into
the gas supply passage 690.
[0168] The arm 688 is connected with a shield plate lifting
mechanism 697 and a shield plate rotation-driving mechanism 698.
The shield plate lifting mechanism 697 lifts and lowers the shield
plate 682 between a position close to the top surface of the
substrate W held on the spin chuck 621 and a position upwardly away
from the spin chuck 621.
[0169] During the drying processing to the substrate W in the
washing processing unit SOAKa in FIG. 10, with the shield plate 682
brought close to the substrate W as shown in FIG. 11, an inert gas
is supplied to clearance between the substrate W and the shield
plate 682 from the gas supply passage 690. This allows the inert
gas to be efficiently supplied from the center of the substrate W
to the peripheral portion thereof, thereby ensuring the removal of
the liquid layer L on the substrate W.
[0170] Although in the above-described embodiment, the substrate W
is subjected to drying processing by spin drying in the washing
processing unit SOAK, the substrate W may be subjected to drying
processing by other methods such as a reduced pressure drying
method or an air knife drying method.
[0171] Although in the above-described embodiment, the inert gas is
supplied from the nozzle 670 with the liquid layer L of the rinse
liquid being formed, the following method may be applied when the
liquid layer L of the rinse liquid is not formed or the rinse
liquid is not used. That is, the liquid layer of washing liquid is
shaken off once by rotating the substrate W, and an inert gas is
then immediately supplied from the nozzle 670 to thoroughly dry the
substrate W.
[0172] As described above, in the substrate processing apparatus
500 according to the embodiment, the substrate W is subjected to
the washing processing by the washing processing group 80 in the
washing processing block 13 before the exposure processing by the
exposure device 15. During this washing processing, part of the
component of the resist on the substrate W is eluted in the washing
liquid or the rinse liquid, and washed away. Therefore, even if the
substrate W is in contact with liquid in the exposure device 15,
the component of the resist on the substrate W is hardly eluted in
the liquid. This prevents contamination inside the exposure device
15 while preventing the component of the resist eluted in the
washing liquid from remaining on the substrate W.
[0173] Moreover, the washing processing unit SOAK applies the
drying processing to the substrate W after the washing processing,
which prevents the attachment of particles and the like in the
atmosphere to the substrate W while transporting the substrate W
after the washing processing. This prevents the contamination of
the substrate W, which prevents the contamination inside the
exposure device 15.
[0174] In addition, since the washing processing block 13 is
arranged adjacent to the interface block 14, the substrate W is
subjected to the washing processing immediately before the exposure
processing by the exposure device 15. Therefore, this enables the
transport route for the substrate W after the washing processing to
the exposure device 15 to be shortened. This prevents the
attachment of particles and the like in the atmosphere to the
substrate W in the transport process after the washing processing,
which prevents the contamination of the substrate W.
[0175] As a result of foregoing, the processing defects of the
substrate W that may be generated in the exposure device 15 can be
reduced.
[0176] Moreover, the washing processing unit SOAK applies the
drying processing to the substrate W by spraying the inert gas onto
the substrate W from the center to the peripheral portion thereof
while rotating the substrate W. This ensures that the washing
liquid and the rinse liquid are removed from the substrate W, which
reliably prevents the attachment of particles and the like in the
atmosphere on the washed substrate W. It is thus possible to
reliably prevent the contamination of the substrate W and the
generation of dry marks on the surface of the substrate W.
[0177] Also, it is possible to reliably prevent the washing liquid
and the rinse liquid from remaining on the washed substrate W,
which reliably prevents further elution of the resist component in
the washing liquid and the rinse liquid during the transport of the
substrate W from the washing processing unit SOAK to the exposure
device 15. It is thus possible to reliably prevent a defective
shape of the resist film and the contamination inside the exposure
device 15.
[0178] As a result of the foregoing, processing defects of the
substrate W can be reliably prevented.
[0179] In addition, since the substrate processing apparatus 500
according to the embodiment has the structure in which the washing
processing block 13 is added to an existing substrate processing
apparatus, processing defects that may be generated during the
exposure processing and after the exposure processing can be
reduced at low cost.
[0180] The interface transport mechanism IFR is next described.
FIG. 12 is a diagram for illustrating the configuration and the
operation of the interface transport mechanism IFR.
[0181] The configuration of the interface transport mechanism IFR
is first described. As shown in FIG. 12, the movable base 31 in the
interface transport mechanism IFR is threadably mounted to a
screwed shaft 32. The screwed shaft 32 is rotatably supported with
support bases 33 so as to extend in the X direction. One end of the
screwed shaft 32 is provided with a motor M1, which causes the
screwed shaft 32 to rotate and the movable base 31 to horizontally
move in the .+-.X direction
[0182] A hand support base 34 is mounted on the movable base 31 so
as to rotate in the .+-.0 direction while moving up and down in the
.+-.Z direction. The hand support base 34 is coupled to a motor M2
in the movable base 31 through a rotation shaft 35, and rotated by
the motor M2. Two hands H5, H6 for holding the substrate W in a
horizontal attitude are mounted to the hand support base 34 one
above the other, so as to move forward and backward.
[0183] The operation of the interface transport mechanism IFR is
next described. The operation of the interface transport mechanism
IFR is controlled by the main controller 30 in FIG. 1.
[0184] The interface transport mechanism IFR initially rotates the
hand support base 34 at the position A in FIG. 12 while lifting the
hand support base 34 in the +Z direction, to allow the upper hand
H5 to enter the substrate platform PASS11. When the hand H5 has
received the substrate W in the substrate platform PASS11, the
interface transport mechanism IFR retracts the hand H5 from the
substrate platform PASS11, and lowers the hand support base 34 in
the -Z direction.
[0185] The interface transport mechanism IFR subsequently moves in
the -X direction, and rotates the hand support base 34 at the
position B while allowing the hand H5 to enter a substrate inlet
15a (see FIG. 1) in the exposure device 15. After the hand H5 has
carried the substrate W into the substrate inlet 15a, the interface
transport mechanism IFR retracts the hand H5 from the substrate
inlet 15a.
[0186] Then, the interface transport mechanism IFR allows the lower
hand H6 to enter a substrate inlet 15b (see FIG. 1) in the exposure
device 15. When the hand H6 has received the substrate W in the
substrate inlet 15b, the interface transport mechanism retracts the
hand H6 from the substrate inlet 15b.
[0187] The interface transport mechanism IFR subsequently moves in
the +X direction, and rotates the hand support base 34 at the
position A to allow the hand H5 to enter the substrate platform
PASS12 and transfer the substrate W onto the substrate platform
PASS12.
[0188] If the exposure device 15 is not capable of receiving the
substrate W during the transport of the substrate W from the
substrate platform PASS11 to the exposure device 15, the substrate
W is transported to the buffer unit SBF once, and waits there until
the exposure device 15 becomes capable of receiving the substrate
W.
[0189] As described above, in this embodiment, the interface
transport mechanism IFR employs the hand H5 during the transport of
the substrate W from the substrate platform PASS11 to the exposure
device 15, and employs the hand H6 when carrying the substrate W
from the exposure device 15 to the substrate platform PASS12. That
is, the hand H6 is used in transporting the substrate W to which a
liquid is attached after the exposure processing, and the hand H5
is used in transporting the substrate W to which no liquid is
attached before the exposure processing. This prevents the liquid
on the substrate W from attaching to the hand H5.
[0190] Moreover, the hand H6 is arranged below the hand H5, so that
even if a liquid drops from the hand H6 and the substrate W held
thereon, the liquid will not attach to the hand H5 and the
substrate W held thereon.
[0191] Furthermore, as described above, the fifth central robot CR5
also employs the lower hand CRH10 during the transport of the
substrate W to which a liquid is attached after the exposure
processing (between the substrate platform PASS12 and the thermal
processing group 131), and employs the upper hand CRH9 during the
transport of the substrate W to which no liquid is attached before
the exposure processing (between the substrate platform PASS9 and
the edge exposure units EEW, and between the edge exposure units
EEW and the substrate platform PASS11). This prevents a liquid from
attaching to the substrate W before the exposure processing also in
the fifth central robot CR5.
[0192] As a result of the foregoing, a liquid is prevented from
attaching to the substrate W before the exposure processing, which
prevents the contamination of the substrate W due to the attachment
of particles and the like in the atmosphere. This prevents the
generation of processing defects of the substrate W of the exposure
device 15.
[0193] Although in this embodiment, the single interface transport
mechanism IFR is used for transporting the substrate W from the
substrate platform PASS11 to the exposure device 15, from the
exposure device 15 to the substrate platform PASS12, a plurality of
interface transport mechanisms IFR may also be used for
transporting the substrate W.
[0194] The operation and the configuration of the interface
transport mechanism IFR may also be modified according to the
positions of the substrate inlet 15a and the substrate outlet 15b
of the exposure device 15. For example, where the substrate inlet
15a and the substrate outlet 15b of the exposure device 15 are
positioned opposite to the position A in FIG. 12, the screwed shaft
32 of FIG. 12 may not be provided.
[0195] Furthermore, the numbers of the coating units BARC, RES, the
development processing units DEV, the washing processing units
SOAK, the heating units HP, and the cooling units CP may suitably
be changed according to the processing speed of each processing
block.
[0196] Furthermore, a two-fluid nozzle shown in FIG. 13 may also be
used in the washing processing unit SOAK, instead of one or both
the nozzle 650 for washing processing and the nozzle 670 for drying
processing shown in FIG. 4
[0197] FIG. 13 is a longitudinal cross section showing an example
of the internal structure of the two-fluid nozzle 950 for use in
washing and drying processing. The two-fluid nozzle 950 is capable
of selectively discharging a gas, a liquid, and a fluid mixture of
the gas and liquid.
[0198] The two-fluid nozzle 950 in this embodiment is so-called an
external-mix type. The external-mix type two-fluid nozzle 950 shown
in FIG. 13 comprises an inner body portion 311 and an outer body
portion 312. The inner body portion 311 is composed of, e.g.,
quartz, and the outer body portion 312 is composed of a fluororesin
such as PTFE (polytetrafluoroethylene).
[0199] A cylindrical liquid passage 311b is formed along the
central axis of the inner body portion 311. The liquid passage 311b
is provided with the supply pipe 663 shown in FIG. 4 for washing
processing. Washing liquid or rinse liquid supplied from the supply
pipe 663 is thus introduced into the liquid passage 311b.
[0200] A liquid discharge port 311a that communicates with the
liquid passage 311b is formed at a lower end of the inner body
portion 311. The inner body portion 311 is inserted into the outer
body portion 312. Upper ends of the inner body portion 311 and the
outer body portion 312 are joined together, while lower ends
thereof are not joined.
[0201] A cylindrical gas passage 312b is formed between the inner
body portion 311 and the outer body portion 312. A gas discharge
port 312a that communicates with the gas passage 312b is formed at
the lower end of the outer body portion 312. The supply pipe 674
shown in FIG. 4 for drying processing is mounted to a peripheral
wall of the outer body portion 312, so as to communicate with the
gas passage 312b. An inert gas supplied from the supply pipe 674 is
thus introduced into the gas passage 312b.
[0202] The diameter of the gas passage 312b decreases downward in
the vicinity of the gas discharge port 312a. As a result, the
velocity of flow of the inert gas is accelerated, and the inert gas
is discharged from the gas discharge port 312a.
[0203] The washing liquid discharged from the liquid discharge port
311a and the inert gas discharged from the gas discharge port 312a
are mixed outside near the lower end of the two-fluid nozzle 950 to
generate a mist-like fluid mixture that contains fine droplets of
the washing liquid.
[0204] FIGS. 14 (a), 14 (b), 14 (c) are diagrams for use in
illustrating a method of applying drying processing to the
substrate W using the two-fluid nozzle 950 in FIG. 13.
[0205] The substrate W is initially held on the spin chuck 621 by
suction, as shown in FIG. 4, and rotates together with the rotation
of the rotation shaft 625. The rotation speed of the rotation shaft
625 is, e.g., about 500 rpm.
[0206] In this state, as shown in FIG. 14 (a), the two-fluid nozzle
950 discharges the mist-like fluid mixture of the washing liquid
and the inert gas onto the top surface of the substrate W while
gradually moving from above the center of the substrate W to above
the peripheral portion thereof. In this way, the fluid mixture is
sprayed onto the entire surface of the substrate W from the
two-fluid nozzle 950 to wash the substrate W.
[0207] Next, the supply of the fluid mixture is stopped, and the
rotation speed of the rotation shaft 625 decreases while the rinse
liquid is discharged from the two-fluid nozzle 950 onto the
substrate W, as shown in FIG. 14 (b). The rotation speed of the
rotation shaft 625 is, e.g., about 10 rpm. A liquid layer L of the
rinse liquid is thus formed on the entire surface of the substrate
W. Alternatively, the rotation of the rotation shaft 625 may be
stopped to form the liquid layer L on the entire surface of the
substrate W. When pure water is used as the washing liquid in the
fluid mixture for washing the substrate W, the supply of the rinse
liquid may be omitted.
[0208] After the formation of the liquid layer L, the supply of the
rinse liquid is stopped. Then, the inert gas is discharged onto the
substrate W from the two-fluid nozzle 950, as shown in FIG. 14 (c).
This causes the washing liquid on the center of the substrate W to
move to the peripheral portion of the substrate W, leaving the
liquid layer L only on the peripheral portion.
[0209] Then, the rotation speed of the rotation shaft 625
increases. The rotation speed of the rotation shaft 625 is, e.g.,
about 100 rpm. This causes a great centrifugal force acting on the
liquid layer L on the substrate W, allowing the removal of the
liquid layer L on the substrate W. As a result, the substrate W is
dried.
[0210] The two-fluid nozzle 950 may gradually move from above the
center of the substrate W to above the peripheral portion thereof
when removing the liquid layer L on the substrate W. This allows
the inert gas to be sprayed to the entire surface of the substrate
W, which ensures the removal of the liquid layer L on the substrate
W. As a result, the substrate W can be reliably dried.
[0211] As described above, the fluid mixture discharged from the
two-fluid nozzle 950 contains fine droplets of the washing liquid.
Therefore, even if the surface of the substrate W has
irregularities, any contaminants attached on the surface of the
substrate W can be stripped off. The contaminants on the surface of
the substrate W can thus be reliably removed. Moreover, even if the
films on the substrate W have low wettability, the fine droplets of
the washing liquid strip off the contaminants on the surface of the
substrate W, so that the contaminants can be reliably removed from
the surface of the substrate W.
[0212] As a result, even if the solvent or the like in a resist is
sublimated in the thermal processing units HP and the sublimates
are attached to the substrate W again when thermal processing is
applied to the substrate W by the thermal processing units HP
before the exposure processing, the sublimates attached to the
substrate W can be reliably removed by the washing processing units
SOAK. It is therefore possible to reliably prevent the
contamination inside the exposure device 14.
[0213] In addition, adjusting the flow rate of the inert gas allows
adjustments to be easily made to the detergency in washing the
substrate W. Thus, when the organic films (i.e., a resist film) on
the substrate W are prone to damage, damage to the organic films on
the substrate W can be prevented by weakening the detergency. Tough
contaminants on the surface of the substrate W can also be removed
reliably by strengthening the detergency. By adjusting the
detergency in this way according to the properties of the organic
films on the substrate W and the degree of contamination, it is
possible to prevent damage to the organic films on the substrate W
and wash the substrate W reliably.
[0214] Moreover, the external-mix type two-fluid nozzle 950
generates the fluid mixture by mixing the washing liquid and the
inert gas outside the two-fluid nozzle 950. The inert gas and the
washing liquid flow through the separate flow passages,
respectively, in the two-fluid nozzle 950. This prevents the
washing liquid from remaining in the gas passage 312b, allowing the
inert gas to be discharged independently from the two-fluid nozzle
950. Also, the rinse liquid can be discharged independently from
the two-fluid nozzle 950 by supplying the rinse liquid from the
supply pipe 663. This allows the fluid mixture, the inert gas, and
the rinse liquid to be selectively discharged from the two-fluid
nozzle 950.
[0215] Furthermore, the use of the two-fluid nozzle 950 obviates
the need to provide nozzles for supplying the washing liquid or the
rinse liquid to the substrate W and for supplying the inert gas to
the substrate W separately. This provides reliable washing and
drying of the substrate W with a simple structure.
[0216] Although, in this embodiment, the two-fluid nozzle 950 is
used to supply the rinse liquid to the substrate W, a separate
nozzle may also be used for supplying the rinse liquid to the
substrate W.
[0217] Moreover, in this embodiment, although the two-fluid nozzle
950 is used to supply the inert gas to the substrate W, a separate
nozzle may also be used for supplying the inert gas to the
substrate W.
[0218] In this embodiment, the anti-reflection film processing
block 10, the resist film processing block 11, the development
processing block 12, and the washing processing block 13 correspond
to a processing section; the interface block 14 corresponds to an
interface; the indexer block 9 corresponds to an indexer; the
coating units RES correspond to a first processing unit; the resist
film processing block 11 corresponds to a first processing block;
the development processing units DEV correspond to a second
processing unit; the development processing block 12 corresponds to
a second processing block; the washing processing units SOAK, SOAKa
correspond to a third processing unit; the washing processing block
13 corresponds to a third processing block; the coating units BARC
correspond to a fourth processing unit; the anti-reflecting film
processing block 10 corresponds to a fourth processing block; and
the resist film correspond to a photosensitive film.
[0219] The heating units HP and the cooling units CP correspond to
a first to fourth thermal processing units; the second central
robot CR2 corresponds to a first transport unit; the third central
robot CR3 corresponds to a second transport unit; the fourth
central robot CR4 corresponds to a third transport unit; the first
central robot CR1 corresponds to a fourth transport unit; the fifth
central robot CR5 corresponds to a fifth transport unit; the
interface transport mechanism IFR corresponds to a sixth transport
unit; the hand CRH9 corresponds to a first holder; the hand CRH10
corresponds to a second holder; the hand H5 corresponds to a third
holder; the hand H6 corresponds to a fourth holder; and the
platforms PASS11, PASS12 correspond to a platform.
[0220] The spin chuck 621 corresponds to a substrate holding
device; the rotation shaft 625 and the chuck rotation-drive
mechanism 636 correspond to a rotation-drive device; the nozzle 650
for washing processing corresponds to a washing liquid supplier and
a rinse liquid supplier; and the nozzles 670, 770, 870 for drying
processing correspond to an inert gas supplier.
[0221] The two-fluid nozzle 950 corresponds to a fluid nozzle; the
liquid passage 311b corresponds to a liquid flow passage; and the
gas passage 312b corresponds to a gas flow passage.
[0222] Although the present invention has been described and
illustrated in detail, it is clearly understood that the same is by
way of illustration and example only and is not to be taken by way
of limitation, the spirit and scope of the present invention being
limited only by the terms of the appended claims.
* * * * *