U.S. patent application number 12/131827 was filed with the patent office on 2008-10-09 for method for cleaning elements in vacuum chamber and apparatus for processing substrates.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. Invention is credited to Tsuyoshi Moriya, Hiroshi Nagaike, Hiroyuki Nakayama.
Application Number | 20080245388 12/131827 |
Document ID | / |
Family ID | 34467134 |
Filed Date | 2008-10-09 |
United States Patent
Application |
20080245388 |
Kind Code |
A1 |
Moriya; Tsuyoshi ; et
al. |
October 9, 2008 |
METHOD FOR CLEANING ELEMENTS IN VACUUM CHAMBER AND APPARATUS FOR
PROCESSING SUBSTRATES
Abstract
To clean an element in a vacuum chamber by causing particles
sticking to the element to scatter, the present invention uses a
means for applying a voltage to the element and causing the
particles to scatter by utilizing Maxwell's stress, a means for
electrically charging the particles and causing the particles to
scatter by utilizing the Coulomb force, a means for introducing a
gas into the vacuum chamber and causing the particles sticking to
the element to scatter by causing a gas shock wave to hit the
element, a means for heating the element and causing the particles
to scatter by utilizing the thermal stress and thermophoretic
force, or a means for causing the particles to scatter by applying
mechanical vibrations to the element. The thus scattered particles
are removed by carrying them in a gas flow in a relatively high
pressure atmosphere.
Inventors: |
Moriya; Tsuyoshi;
(Nirasaki-shi, JP) ; Nagaike; Hiroshi;
(Nirasaki-shi, JP) ; Nakayama; Hiroyuki;
(Nirasaki-shi, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
TOKYO ELECTRON LIMITED
Minato-ku
JP
|
Family ID: |
34467134 |
Appl. No.: |
12/131827 |
Filed: |
June 2, 2008 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10921947 |
Aug 20, 2004 |
|
|
|
12131827 |
|
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Current U.S.
Class: |
134/1 |
Current CPC
Class: |
B08B 3/12 20130101; H01L
21/67028 20130101; H01L 21/6831 20130101; H01J 37/32862
20130101 |
Class at
Publication: |
134/1 |
International
Class: |
B08B 6/00 20060101
B08B006/00 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 25, 2003 |
JP |
2003-300427 |
Jul 27, 2004 |
JP |
2004-218939 |
Claims
1. An element cleaning method which causes particles sticking to an
element in a vacuum chamber to scatter, wherein by applying a
voltage to said element, the particles sticking to said element are
caused to scatter in accordance with a permittivity difference
between said element and said particles.
2. An element cleaning method as claimed in claim 1, wherein said
voltage is a voltage that cycles on and off repeatedly.
3. An element cleaning method as claimed in claim 2, wherein said
voltage is an AC voltage.
4. An element cleaning method as claimed in claim 1, wherein said
element is a stage for mounting thereon a substrate to be
processed.
5. An element cleaning method as claimed in claim 4, wherein said
voltage is applied using an electrostatic power supply unit
connected to said stage.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a divisional application of and
claims priority to U.S. application Ser. No. 10/921,947, filed on
Aug. 20, 2004, of which the entire content is hereby incorporated
by reference, with the present application also claiming priority
to predecessors of the '947 application as follows. U.S.
application Ser. No. 10/921,947 is based upon and claims the
benefit of priority from prior Japanese Applications JP
2003-300427, filed on Aug. 25, 2003 and JP 2004-218939, filed on
Jul. 27, 2004.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to a technique for cleaning
elements in a vacuum chamber and, more particularly, to a technique
for cleaning a stage, or the like, for holding, for example, a
substrate to be processed.
[0004] 2. Description of the Related Art
[0005] In the manufacturing processes of semiconductors or flat
panel displays (FPDs) such as liquid crystal displays, a major
concern is to prevent substrates, during processing, being
contaminated with particles entering from outside the manufacturing
equipment or generated within the manufacturing equipment. In
particular, if the stage installed in a vacuum chamber is
contaminated with particles, the particles may stick to the
underside of the substrate mounted thereon, and the contamination
may spread in subsequent steps, eventually rendering the final
products defective.
[0006] FIG. 1 shows a schematic diagram of a conventional plasma
etching apparatus. A stage 2, for holding a substrate to be
processed, is disposed inside a vacuum chamber 1, and a
high-frequency power supply unit 3 as a bias power supply unit is
connected via a capacitor 4 to the stage 2 to which is also
connected, via a low-pass filter 6, to an electrostatic power
supply unit 5 for holding the substrate onto the stage 2. The
vacuum chamber is grounded, and its upper surface acts as an upper
electrode 7. The surface of the stage 2 is coated with alumina,
polyimide, or the like, and the semiconductor substrate is
attracted onto it when a DC voltage is applied from the
electrostatic power supply unit 5. A focus ring 8 is mounted on the
peripheral portion of the stage 2 in such a manner as to encircle
the substrate placed thereon. The focus ring is a ring-shaped plate
made of a material similar to that of the substrate, for example,
and is provided to hold a generated plasma on the substrate. A
processing gas is introduced through gas inlet ports 10 of a shower
head 9 disposed above the stage. Though not shown here, a pump for
partially or wholly evacuating the chamber is provided. In the
illustrated example, it is assumed that particles P are left
sticking to the stage 2.
[0007] When performing processing in the above vacuum chamber, the
semiconductor substrate (not shown) is placed on the stage 2, and
is held on it by electrostatic attraction by applying a voltage
from the electrostatic power supply unit 5; then, a reactive gas
for processing is introduced into the chamber 1 through the gas
inlet ports 10 of the shower head 9, and a plasma is generated by
supplying power from the high-frequency power supply unit 3, to
perform a predetermined processing. At this time, if the particles
P are left sticking to the stage 2, they stick to the underside of
the substrate during processing, and the contamination spreads in
subsequent steps, leading to such problems as a reduced production
yield of the finally produced semiconductor devices.
[0008] Possible sources of such particles include, for example,
those entering from outside the chamber, those due to the contact
friction between the stage 2 and the semiconductor substrate, and
those formed by the deposition of products of the reactive gas. In
view of this, Japanese Unexamined Patent Publication No.
2002-100567, for example, proposes a method of keeping the stage
clean by cleaning it with a brush scrubber or a wiper blade or by
spraying a clean liquid or gas onto the stage.
[0009] However, since such cleaning means usually requires opening
the lid of the chamber and thus exposing the chamber to the
atmosphere, the cleaning itself can cause contamination. Further,
using a brush scrubber or a wiper blade under reduced pressure is
not effective in removing particles (for examples, particles with
particle size of about 10 nm); on the contrary, this runs the risk
of generating new particles due to physical friction. On the other
hand, cleaning the stage with a liquid requires a complicated
structure for cleaning, and greatly reduces throughput. Moreover,
by simply spraying a gas, it is difficult to thoroughly clean the
stage, because the collision cross section between the particle and
the gas is very small.
SUMMARY OF THE INVENTION
[0010] In view of the above problems, it is an object of the
present invention to provide an element cleaning method that
removes particles from the surface of an element in a vacuum
chamber by effectively causing the particles to scatter, a
substrate processing apparatus that is equipped with means for
implementing the cleaning method, a scattering particle detecting
apparatus that monitors the cleaning, a method for evaluating
cleanness, and a method for detecting the end point of the
cleaning.
[0011] To solve the above problems, in a first aspect of the
invention, particles sticking to the element are caused to scatter
in accordance with a permittivity difference between the element
and the particles by applying a voltage to the element.
[0012] In a second aspect of the invention, particles sticking to
the element are electrically charged, and a voltage of the same
polarity as the charge of the charged particles is applied to the
element, thereby causing the particles sticking to the element to
scatter.
[0013] In a third aspect of the invention, a gas is introduced
while maintaining the vacuum chamber at a predetermined pressure,
and particles sticking to the element are caused to scatter by
causing a gas shock wave to hit the element.
[0014] In a fourth aspect of the invention, particles sticking to
the element are caused to scatter by utilizing thermal stress and a
thermophoretic force induced by controlling the temperature of the
element.
[0015] In a fifth aspect of the invention, particles sticking to
the element are caused to scatter by applying mechanical vibration
to the element.
[0016] In a sixth aspect of the invention, while maintaining the
vacuum chamber at a pressure equal to or higher than
1.3.times.10.sup.3 Pa (10 Torr), particles are caused to scatter
and the particles are removed by utilizing a gas flow.
[0017] In a seventh aspect of the invention, in a preprocessing
step preceding the step of removing the particles by utilizing a
gas flow while maintaining the vacuum chamber at a pressure equal
to or higher than 1.3.times.10.sup.3 Pa (10 Torr), the particles
are caused to scatter by holding the vacuum chamber at a pressure
lower than 1.3.times.10.sup.2 Pa (1 Torr).
[0018] In an eighth aspect of the invention, when causing the
particles to scatter by utilizing a gas flow while maintaining the
vacuum chamber at a pressure equal to or higher than
1.3.times.10.sup.3 Pa (10 Torr), mechanical vibration is applied to
the particles to be scattered.
[0019] In a ninth aspect of the invention, with the element heated
and maintained at a high temperature, the step of introducing a gas
while maintaining the vacuum chamber at a predetermined pressure
and of causing a gas shock wave to hit the element and the step of
applying a high voltage to the element are performed simultaneously
or successively.
[0020] In a 10th aspect of the invention, there is provided a
substrate processing apparatus which applies a voltage from an
electrostatic power supply unit to the stage on which the substrate
to be processed is yet to be mounted, and thereby causes particles
sticking to the stage to scatter.
[0021] In an 11th aspect of the invention, there is provided a
substrate processing apparatus which, while maintaining the vacuum
chamber at a predetermined pressure, introduces a gas through a gas
inlet pipe toward the stage on which the substrate to be processed
is yet to be mounted, and causes particles sticking to the stage to
scatter by causing a shock wave, generated by the introduction of
the gas, to hit the stage.
[0022] In a 12th aspect of the invention, there is provided a
substrate processing apparatus which passes a head cooling gas
through a gas inlet pipe provided to introduce a gas to an upper
surface of the stage and, in this condition, heats the stage with
no substrate to be processed mounted thereon up to a predetermined
temperature by using a heating means and thereby causes particles
sticking to the stage to scatter.
[0023] In a 13th aspect of the invention, there is provided a
scattering particle detecting apparatus which comprises: a light
source for projecting incident light into the vacuum chamber in
such a manner that the incident light passes through a space above
the element; and a light detector, disposed at a predetermined
angle to the incident light, for detecting scattered light
occurring due to the particles.
[0024] In 14th and 15th aspects of the invention, there are
provided a cleanness evaluating method for evaluating the cleanness
of an element in a vacuum chamber by detecting scattered light
occurring due to particles, and a cleaning end point detecting
method for detecting the end point of the cleaning of the
element.
BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The above object and features of the present invention will
be more apparent from the following description of the preferred
embodiments with reference to the accompanying drawings,
wherein:
[0026] FIG. 1 is a diagram showing a prior art plasma processing
apparatus to which the present invention can be applied;
[0027] FIG. 2 is a diagram showing the results of an experiment in
which particles were caused to scatter by utilizing Maxell's stress
in accordance with a first embodiment of the present invention;
[0028] FIG. 3 is a diagram showing the results of an experiment in
which particles were caused to scatter by applying a voltage with a
rectangular waveform in accordance with the first embodiment of the
present invention;
[0029] FIG. 4 is a picture showing an image of laser scattered
light due to scattering particles in accordance with the first
embodiment of the present invention;
[0030] FIG. 5 is an explanatory diagram showing the relationship
between laser light and scattering particles in accordance with the
first embodiment of the present invention;
[0031] FIG. 6 is a diagram showing the number of scattered
particles as a function of an applied voltage in accordance with
the first embodiment of the present invention;
[0032] FIG. 7 is a picture showing the scattering of particles
caused by a gas shock wave, at a certain pressure, in accordance
with a sixth embodiment of the present invention;
[0033] FIG. 8 is a picture showing the scattering of particles
caused by a gas shock wave at another pressure in accordance with
the sixth embodiment of the present invention;
[0034] FIG. 9 is a diagram showing the number of particles
scattering caused by a gas shock wave applied repetitively in
accordance with the sixth embodiment of the present invention;
[0035] FIG. 10 is a diagram showing the number of particles
scattering caused by heating in accordance with a seventh
embodiment of the present invention;
[0036] FIG. 11 is a schematic diagram showing a scattering particle
detecting apparatus in accordance with an 11th embodiment of the
present invention;
[0037] FIG. 12 is a diagram showing the effect of ultrasonic
vibrations in accordance with an eighth embodiment of the present
invention;
[0038] FIG. 13 is a schematic diagram showing a plasma processing
apparatus in accordance with a 12th embodiment of the present
invention;
[0039] FIG. 14 is a diagram showing a flow of a cleaning method in
accordance with the 12th embodiment of the present invention;
[0040] FIG. 15 is a diagram showing the relationship between the
internal pressure of a chamber and the number of particles
according to the cleaning method of the 12th embodiment of the
present invention;
[0041] FIG. 16 is a diagram showing a flow of a cleaning method in
accordance with a 13th embodiment of the present invention;
[0042] FIG. 17 is a diagram showing the effect of preprocessing in
accordance with the 13th embodiment of the present invention;
[0043] FIG. 18 is a diagram showing the relationship between the
number of particles remaining on a wafer and the number of
repetitions of particle removal when the particle removal with
preprocessing was performed in accordance with the 13th embodiment
of the present invention;
[0044] FIG. 19 is a diagram showing one step in a cleaning method
in accordance with a 14th embodiment of the present invention;
and
[0045] FIG. 20 is a diagram showing the relationship between moving
speed and particles in accordance with the 14th embodiment of the
present invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0046] Before proceeding to the description of the preferred
embodiments of the invention, the principles of the present
invention will be described first. The present inventor et al.
analyzed attraction forces acting between particles and the stage,
conducted studies on means for separating and scattering particles
off the stage by overcoming the attraction forces, and discovered
that it would be effective to utilize (1) Maxwell's stress, (2)
force generated by gas shock wave, or (3) thermal stress and a
thermophoretic force, or a combination of them. That is,
experimental results were obtained showing that when these forces
were applied to the stage or the particles, the particles were
effectively separated and scattered from the stage. Here, a laser
light scattering method was used to confirm the scattering of
particles.
[0047] (1) Utilizing Maxwell's Stress
[0048] The present inventor et al. obtained unique experimental
results showing that the application of a voltage to an
electrostatic stage causes particles sticking to the stage to
scatter, and discovered that this phenomenon is attributable to
Maxwell's stress.
[0049] Maxwell's stress is given by
F = .rho. E - 1 2 E 2 .gradient. + 1 2 .gradient. ( E 2 .tau.
.differential. .differential. .tau. ) [ MATHEMATICAL 1 ]
##EQU00001##
[0050] where .rho. is the amount of charge, E is the electric
field, .epsilon. is the permittivity, and .tau. is the density.
[0051] The first term in the above equation expresses the Coulomb
force due to charged particles. The second term indicates that a
negative force occurs when an electric field acts at a place where
the permittivity changes, since .gradient..epsilon. is the
differentiation of the permittivity with respect to the place. The
third term expresses the force, due to deformation or the like,
acting on a substance whose permittivity .epsilon. varies with the
density .tau.; rubber is an example of such a substance, but when
we consider particles existing within semiconductor manufacturing
equipment, the third term may be ignored. Accordingly, the forces
expressed by the first and second terms can be utilized.
[0052] (2) Utilizing the Force Generated by Gas Shock Wave
[0053] As a result of an experiment conducted by spraying a gas to
the stage, it was discovered that particles cannot be effectively
scattered by simply spraying the gas, but can be effectively
scattered under certain conditions. That is, in the experiment, the
particles could be effectively scattered when a large amount of gas
was introduced, at once, into an atmosphere held, for example, at a
pressure not higher than 1.3.times.10.sup.-2 Pa (1.times.10.sup.-4
Torr), and, as a result of an analysis, it has been found that when
a large amount of gas is introduced at once with a large pressure
difference, a shock wave occurs because of the pressure difference
and, when it hits the surface of the stage, the particles are
effectively scattered. Accordingly, the force generated by a gas
shock wave can also be utilized effectively as a means for
scattering and removing the particles sticking to the stage.
[0054] (3) Utilizing Thermal Stress and Thermophoretic Force
[0055] By making the temperature of the stage sufficiently higher
or lower than its normal operating temperature by using a stage
temperature control means, separation of particles due to thermal
stress can be induced. Further, according to an experiment, when
the stage was maintained at a high temperature while holding a
predetermined pressure, particles were successfully caused to
scatter from the stage by the resulting thermophoretic force. In
this way, the thermal stress or the thermophoretic force can be
utilized for cleaning the stage. Further, in these experiments, in
situ particle measurements were performed using a laser light
scattering method. It has been found that this apparatus can also
be used for monitoring the cleanness of the stage, etc.
[0056] The preferred embodiments of the present invention will be
described below with reference to the accompanying drawings. The
description given herein deals with the case of a plasma etching
apparatus as an example, but the present invention is not limited
to this particular example, but can be applied to any apparatus,
such as a film deposition apparatus, that has a stage on which a
substrate is mounted for processing. Further, the stage is not
limited to a stage for mounting a semiconductor substrate thereon,
but may be a stage intended for any other kind of substrate such as
a substrate for a liquid crystal display device. Furthermore, the
stage to be cleaned is only one example, and it will be appreciated
that the present invention can be applied for cleaning any kind of
element in a vacuum chamber.
Embodiment 1
[0057] In this embodiment, in case where there is a large
difference between the permittivity of the stage surface and the
permittivity of the particles, a predetermined electric field is
formed on the surface of the stage in accordance with the second
term of Maxwell's stress equation, and the particles are caused to
scatter by the resulting repelling force.
[0058] More specifically, before the substrate to be processed is
placed on the stage, a positive or negative voltage is applied to
the stage by an electrostatic power supply unit such as shown in
FIG. 1. An electric field appears at the surface via a dielectric
on the surface of the stage. The strength of the electric field at
the surface of the stage is considered to depend on the
permittivity and thickness of the dielectric on the surface of the
stage but, according to an experiment, a voltage approximately
equal to the applied voltage appeared, and the strength of the
electric field did not suffer attenuation due to the presence of
the dielectric. According to Maxwell's stress equation, if an
electric field is applied when there is a difference between the
permittivity of the stage surface and the permittivity of the
particles, the particles should experience forces that cause the
particles to scatter in the directions of the electric lines of
force.
[0059] FIG. 2 is a table showing the results of the experiment. In
the experiment shown in FIG. 2, a number of materials were selected
for the stage, and the amount of scattering was detected for two
kinds of particles, one made of SiO.sub.2 and the other of CF-based
polymer. Particle scattering was particularly large in the case
where the stage was made of bare silicon (permittivity
.epsilon.=11) and the particles deposited thereon were fluorocarbon
(CF) based polymer particles (permittivity .epsilon.=2), and also
in the case where the stage was made of alumina (permittivity
.epsilon.=9) and the particles deposited thereon were fluorocarbon
(CF) based polymer particles. In either case, the difference in
permittivity is as large as 9 or 7. In the other cases where the
difference in permittivity is zero or very small, particle
scattering is nearly zero or small.
[0060] FIG. 3 shows the results obtained when a rectangular
waveform of +2500 V was applied by the electrostatic power supply
unit to the bare silicon stage on which CF-based polymer particles
had been deposited. The solid line shows the waveform of the
electrostatic voltage, and each filled circle indicates the number
of particles. As can be seen, many (more than 60) particles were
scattered the instant that the voltage was applied.
[0061] As shown in FIGS. 4 and 5, the scattered particles can be
detected by using laser light scattering. FIG. 4 shows a photograph
taken of the scattered particles when +2500 V was applied to the
bare silicon on which CF-based polymer particles had been
deposited. As can be seen, many particles are scattering from the
surface of the stage. The photograph was taken by projecting laser
light in the form of a flat plate-like beam at a height about 3 mm
to 4 mm above the stage and by capturing the image from one side
thereof using a CCD camera.
[0062] FIG. 6 is a graph showing the number of scattered particles
as a function of the voltage applied to the stage. The horizontal
axis represents the applied high voltage, and the vertical axis
represents the number of scattered particles. At 1000 V, no
scattered particles were observed, but at 2000 V, about 10
particles were caused to scatter, while at 2500 V, more than 60
particles were caused to scatter. The voltage to be applied for
scattering the particles depends on the permittivity and thickness
of the dielectric on the surface of the stage and the permittivity
and size of the particles; here, it was also found that when
fluorocarbon-based particles were left sticking to the
electrostatic stage having an alumina ceramic surface as used in a
plasma etching apparatus, the particles were successfully scattered
and removed by applying a voltage greater than about .+-.1500
V.
[0063] Further, at this time, to effectively remove the scattered
particles, a gas such as a nitrogen gas may be passed into the
chamber and be drawn off by a pump so that the scattered particles
are drawn out the chamber by being carried in the flow of the gas.
The method of drawing out the scattered particles by passing a gas
can be employed in any of the embodiments hereinafter
described.
[0064] In the present embodiment, an electrostatic electrode was
used to apply the voltage, but a dedicated power supply unit may be
provided. Further, the polarity of the applied voltage may be
either positive or negative, as described above. In this way, by
applying this method prior to the processing of the substrate when
the substrate is not yet placed on the stage, particles can be
prevented from sticking to the underside of the substrate during
processing.
Embodiment 2
[0065] When utilizing the difference between the permittivity of
the stage surface and the permittivity of the particles as
described in the first embodiment above, the effect can be further
enhanced by coating the stage surface with a material having
permittivity sufficiently larger than that of the particles
expected to stick to the surface. Generally, in an environment
where the stage surface is likely to be contaminated by the stick
of silicon particles, a greater effect can be obtained if the stage
surface is coated with a material having permittivity sufficiently
larger than 11.
[0066] Examples of such materials include Bi.sub.2O.sub.3
(permittivity 18.2), CuO (permittivity 18.1), FeO (permittivity
14.2), KH.sub.2PO.sub.4 (permittivity 46), KIO.sub.3 (permittivity
16.85), PbBr.sub.2 (permittivity>30), PbCl.sub.2 (permittivity
33.5), PbCO.sub.3 (permittivity 18.6), PbI.sub.2 (permittivity
20.8), Pb(NO.sub.3).sub.2 (permittivity 16.8), PbO (permittivity
25.9), PbSO.sub.4 (permittivity 14.3), SrSO.sub.4 (permittivity
18.5), TiO.sub.2 (permittivity 85.6 to 170), TlBr (permittivity
30.3), TlCl (permittivity 31.9), Tll (permittivity 21.8),
TiNO.sub.3 (permittivity 16.5), cyclohexanol (permittivity 16.0),
and succinonitrile (permittivity 65.9).
Embodiment 3
[0067] In the first embodiment, the forces acting on the particles
are exerted throughout the application of the voltage but, as
previously shown in FIG. 3, the number of scattered particles
greatly increases when the voltage changes (in particular, the
instant that the voltage is applied). To utilize this phenomenon, a
voltage of rectangular waveform may be applied repetitively to the
stage. By so doing, the particles can be efficiently caused to
scatter as the voltage is applied and stopped. Since it is the
change in voltage that serves to promote the scattering of the
particles, the waveform need not be limited to the rectangular
waveform, but any other waveform, such as a pulse waveform or a
sine waveform, may be used.
[0068] The reason is believed to be that particles easier to
scatter are scattered at the first application of the voltage and
the particles remaining to be scattered are given another change to
scatter when the applied voltage is temporarily removed and the
voltage is applied once again. A similar effect can also be
obtained by applying an AC voltage using an AC power supply. The
higher the AC frequency, the greater the effect.
Embodiment 4
[0069] This embodiment concerns an example in which particles are
caused to scatter by utilizing the Coulomb force. When the
permittivity of the stage and the permittivity of the particles are
approximately the same (close to each other), the force defined by
the second term of Maxwell's stress cannot be utilized, and
therefore, the Coulomb force expressed by the first term is
utilized. That is, the particles on the stage are deliberately
charged, and a voltage of the same polarity as the charge of the
charged particles is applied, thus causing the particles to scatter
by the electrostatic repulsion. Here, to charge the particles on
the stage, a plasma is generated in a space above the stage on
which the substrate is not yet to be placed. Charged particles of
the generated plasma reach the stage, thus charging the particles
on the stage. A suitable gas, such as argon, helium, oxygen,
nitrogen, etc., can be used as the gas for generating the plasma,
but the gas must not contain any substance that can essentially
corrode the material of the stage, and control parameters (power,
pressure, flow rate, etc.) must be selected so that the surface of
the stage will not be etched by physical sputtering.
[0070] As the stage is negatively charged by a self-bias voltage,
the particles on the stage are also negatively charged.
Accordingly, by applying a negative voltage to the stage, the
particles can be scattered off the substrate.
Embodiment 5
[0071] In the fourth embodiment described above, the particles
sticking to the stage are negatively charged by using a plasma, but
the method of charging the particles is not limited to this
particular example. Rather, any other suitable method may be
employed, for example, a method that positively charges the
particles by emitting photoelectrons by applying ultraviolet light
or vacuum ultraviolet light, a method that positively or negatively
charges the particles by applying ions, or a method that positively
charges the particles by emitting photoelectrons by applying an X
ray or a soft X ray. By charging the particles using such a method,
and applying a voltage of the same polarity as the charge of the
charged particles to the stage, the particles can be effectively
caused to scatter.
Embodiment 6
[0072] According to an experiment conducted by the present inventor
et al., when a large amount of gas was introduced in a short time
into a vacuum chamber held at a pressure not higher than about
1.3.times.10.sup.-2 Pa (1.times.10.sup.-4 Torr), a shock wave with
a maximum speed reaching the speed of sound was generated by the
pressure difference, and particles were efficiently scattered by
causing the shock wave to hit the stage. Here, during the
introduction of the gas, the gas was constantly drawn off by a
vacuum pump.
[0073] For example, an N.sub.2 gas was introduced at a pressure
approximately equal to atmospheric pressure into the vacuum chamber
in which bare silicon with SiO.sub.2 particles sticking thereto was
placed. The N.sub.2 gas was introduced using the shower head
disposed above the stage. FIGS. 7 and 8 are diagrams each showing,
by way of example, the result obtained when the N.sub.2 gas was
introduced while increasing the pressure of the stage vacuum
chamber by utilizing chamber leakage.
[0074] FIG. 7 shows the scattering of particles when the pressure
of the vacuum chamber was 6.7.times.10.sup.-2 Pa
(5.0.times.10.sup.-4 Torr). FIG. 8 shows the scattering of
particles when the pressure was 1.3.times.10.sup.2 Pa
(1.0.times.10.sup.-0 Torr). Each diagram shows an image of laser
light scattering, captured for three seconds starting from the
introduction of the N.sub.2 gas.
[0075] It is shown that, to scatter many particles, the pressure
must be held at about 1.3.times.10.sup.-2 Pa (1.times.10.sup.-4
Torr) or lower, and that, at 1.3.times.10.sup.2 Pa
(1.0.times.10.sup.-0 Torr), hardly any effect is obtained that
causes the particles to scatter. Further, according to the
experiment, it was found that the scattering of particles occurred
immediately following the introduction of the gas, causing 60 to
70% of the particles to scatter.
[0076] FIG. 9 shows the results of an experiment conducted to
verify the particle scattering effect of the N.sub.2 gas; here,
after making SiO.sub.2 particles stick to the bare silicon, as in
the above example, the N.sub.2 gas was introduced at
1.3.times.10.sup.-2 Pa (1.times.10.sup.-4 Torr). In this example,
the amount of particle scattering was evaluated by capturing the
light scattered by the particles and calculating the luminance
value. The vertical axis represents total grayscale value, i.e.,
scattering intensity. According to the experiment, 60 to 70% of the
particles were scattered at the first introduction of the gas, and
a small amount of particle scattering occurred at the second
introduction; however, at the third introduction of the gas, hardly
any scattering occurred. This means that the gas should be
introduced twice to accomplish the particle scattering and removal
process.
[0077] Any suitable gas such as nitrogen, oxygen, argon, etc. can
be used as the gas to be introduced here. The shape and position of
the hole through which the gas is introduced should be determined
so that the shock wave can reach the particles. When introducing
the gas through the shower head, the most effective result can be
obtained if the shower head is formed with a large number of
closely spaced small holes so that the shock wave from the shower
head hits the entire stage, but even when the existing shower head
is used, a marked effect can be obtained, since 60 to 70% of the
particles can be scattered as described above.
Embodiment 7
[0078] This embodiment utilizes the thermal stress or the
thermophoretic force; that is, by making the temperature of the
stage sufficiently higher or lower than its normal operating
temperature by using a stage temperature control means, separation
of particles due to thermal stress can be induced. Further, by
maintaining the stage at a high temperature while holding a
predetermined pressure, the particles can be moved away from the
stage by the resulting thermophoretic force.
[0079] Here, thermophoresis refers to the phenomenon in which a
body in a gas having a temperature gradient experiences a greater
momentum from molecules on the higher temperature side than from
molecules on the lower temperature side, and moves toward the lower
temperature side by being subjected to a force acting in the
direction opposite to the temperature gradient; the thermophoretic
force is dependent on the internal pressure of the chamber and on
the temperature gradient in the vicinity of particle surface.
[0080] FIG. 10 is a graph showing the results of an experiment in
which the particles were caused to scatter by heating the stage. In
this experiment, Si with SiO.sub.2 particles sticking thereto was
used as the stage. The pressure was 1.3.times.10.sup.2 Pa (1 Torr),
and a nitrogen gas was introduced through the upper shower head in
order to maintain the shower head disposed above the stage at low
temperature. The horizontal axis represent the temperature
difference, and the vertical axis represents the number of
particles counted for one minute. As can be seen from the figure,
the scattering of particles began when the temperature difference
increased to about 50.degree. C., and a considerable number of
particles were scattered when the difference exceeded 250.degree.
C.
[0081] According to another experiment in which the stage was
heated while varying the pressure, hardly any scattering was
observed at 1.3 Pa (0.01 Torr), which shows that the scattering of
particles is strongly influenced by the thermophoretic force.
According to still another experiment conducted, the scattering
particles presumably have initial velocity, and it can be said that
the particles are separated from the stage by the resultant of the
thermal stress and the thermophoretic force, and are caused to
scatter by the thermophoretic force. In this embodiment, the
temperature gradient was increased by introducing the nitrogen gas
into the shower head which also functions as the upper electrode,
but it will be appreciated that other suitable means may be used to
increase the temperature gradient.
Embodiment 8
[0082] The scattering of particles can be promoted by applying
ultrasonic vibrations to the surface of the stage. That is, the
sticking of particles to the substrate can be loosened by applying
ultrasonic vibrations. Accordingly, when used in combination with
any one of the first to seventh embodiments, the application of
ultrasonic vibrations can serve to scatter the particles more
effectively. Any suitable method can be employed to apply
ultrasonic vibrations, a typical example being a method that
connects a piezoelectric element to a portion contacting the stage
via a rigid part and applies a voltage to the piezoelectric
element.
[0083] Further, by only applying mechanical vibrations such as
ultrasonic vibrations, the scattering or separation of particles
occurs. FIG. 12 shows an experimental example showing the particle
scattering effect achieved by the application of ultrasonic
vibrations. A scanning particle detector was used to detect the
scattered particles. In the figure, the horizontal axis represents
the time, and the vertical axis represents signals counted by the
detector. As shown in the figure, residual particles carried in an
evacuation line are detected when the detection is started, but the
number of particles detected gradually decreases as the time
elapses. However, when vibrations generated by a ultrasonic wave
are applied in the periods shown (the period from about 30-second
to 130-second points and the period from about 150-second to
180-second points), larger numbers of particles than the particles
detected when the detection was started are caused to separate or
scatter. It is shown that during the time period that the
ultrasonic vibrations are applied, scattered particles are detected
intermittently without any appreciable drop in the number detected.
Since very few particles are detected during the time that the
ultrasonic vibrations are not applied, it can be seen that
application of the ultrasonic vibrations is quite effective.
[0084] Further, not only by applying ultrasonic vibrations, but
also by applying mechanical vibrations caused by the movement of a
component member, the sticking particles can be caused to scatter
or separate. In particular, the stage is often constructed so as to
be movable up and down in the chamber, and it has been found that
during the movement of the stage or when the moving stage comes to
a stop, mechanical vibrations occur, producing a great effect in
causing the particles to scatter or separate. This will be
described in detail later.
Embodiment 9
[0085] Further, by combining the methods so far described, the
particle removal effect can be multiplied. All possible methods may
be combined, or several selected methods may be combined. The
methods may be combined in any suitable way; for example, the
methods that can be carried out simultaneously may be carried out
simultaneously or sequentially. The methods that cannot be carried
out simultaneously should be carried out sequentially. Further, the
methods of the respective embodiments may be carried out
repeatedly, or a combination of the methods of some embodiments may
be carried out repeatedly; in either case, a highly effective
result can be obtained.
[0086] For example, first a gas is introduced and the force
generated by a shock wave is applied to the particles (sixth
embodiment), and thereafter a high voltage is applied (second and
third embodiments), while continuing to heat the stage (seventh
embodiment); these processes may be carried out repeatedly.
Alternatively, these processes may be carried out simultaneously
and repeatedly. In particular, when utilizing the gas shock wave,
the process should be repeated twice, as previously described.
Embodiment 10
[0087] The first to ninth embodiments have each been described as
providing a stage cleaning method, but a similar effect can also be
obtained if the cleaning method is applied for cleaning other
components, for example, the focus ring, included in the stage.
Further, a similar effect can be obtained if the method is applied
for cleaning other elements in the vacuum chamber that need
cleaning.
Embodiment 11
[0088] In carrying out the method of the present invention, the
cleanness of the stage can be evaluated by detecting scattered
particles using a particle detecting apparatus such as shown in
FIG. 11. Further, the end point of the cleaning can be detected by
detecting that the number of particles has dropped below a
predetermined number.
[0089] FIG. 11 shows the scattered particle detecting apparatus
which observes scattered laser light. A stage 110 for mounting a
substrate thereon is installed in a vacuum chamber 100. Laser light
R from a laser light source 20 is passed through an optical system
30 such as a lens and enters the process chamber through an
entrance window 120. The laser light R passing through the optical
system 30 is shaped so as to form a flat plate-like beam in a space
above the stage 110. The laser light R propagates in the space
above the stage 110, while scattered light S, reflected by the
particles scattered by the method of the present invention, enters
a CCD camera 40 through an exit window 130. The laser light R
propagated straight in the space above the stage 110 enters a beam
damper 140 where the light is absorbed. The scattered light S that
entered the CCD camera 40 is converted into an electrical signal
which is supplied to an information processing apparatus 50 such as
a personal computer, and an image of scattering particles is
displayed on a display part 51. In the present embodiment, the
image is captured as a moving image which varies with time, but the
image may be captured as a still image. Control information from a
process equipment control panel 60 is supplied via an A/D converter
70 to the information processing apparatus 50 which, based on the
supplied information, controls the laser light source 20 and the
CCD camera 40 via a pulse generator 80.
[0090] The laser light R emitted for entrance into the chamber 100
is controlled so that the light enters at a position aligned so as
to be able to detect the scattered particles accurately. For
instance, to detect the scattered particles near the stage, the
laser light should be made to enter at a height of 3 mm to 4 mm
above the stage, and to detect the particles scattering higher than
that, the laser light should be shaped to be high enough to cover
the higher portion.
[0091] The light source is not limited to the laser light source,
but a lamp may be used as the light source. For the light detector,
any suitable device, such as a photomultiplier, can be used. The
CCD camera as the detector is arranged so as to capture the
scattering light S scattering in a direction perpendicular to the
incident light R, but may be arranged at some other angle, or
alternatively, a plurality of detectors may be arranged at suitable
angles.
[0092] FIGS. 4, 7, and 8 show examples of captured images; as can
be seen, the scattered particles are clearly captured.
Embodiment 12
[0093] While studying the cleaning process for separating particles
from the wall surfaces of the chamber and removing the separated
particles by carrying them in a gas flow, it has been found that,
to effectively carry the particles in the gas flow, the internal
pressure of the chamber must be maintained not lower than a certain
value (1.3.times.10.sup.3 Pa (10 Torr)). In the step of separating
the particles, any means according to the present invention may be
used, but in the case of a vacuum chamber, such as a process
chamber, that has a mechanism for electrostatically holding a
wafer, the means for separating the particles by utilizing
Maxwell's stress occurring due to the application of a high voltage
can be employed. Examples of the vacuum chamber include, in
addition to the process chamber, vacuum transfer chambers such as a
load lock chamber, transfer chamber, cassette chamber, etc.
[0094] FIG. 13 shows one example of an apparatus for implementing
the cleaning process of the present embodiment. The diagram of FIG.
13 corresponds to the diagram of the plasma etching apparatus shown
in FIG. 1, except that a vent line, an evacuation system, and a
wafer loading gate, omitted in FIG. 1, are added; therefore, the
same parts as those in FIG. 1 are designated by the same reference
numerals. The vent line 13 in the present embodiment is a passage
for passing therethrough a purge gas such as a nitrogen gas, and
comprises a pipe and a valve but does not have an orifice structure
such as that of a flow rate control device. The vent line 13 can
also be used as a passage for introducing a reactive gas; in that
case, the purge gas is introduced through the shower head 9. In
this case also, no orifice structure is provided in the passage
constructed as the vent line. The reason is that, if an orifice
structure is provided, the gas flow may be impeded leading to an
inability to generate a shock wave. The evacuation system comprises
a turbo molecular pump (TMP) 14 as the main pump, behind which is
provided a dry pump (DP) 15 as a roughing vacuum pump. Further, the
wafer load/unload gate 17 is provided in the present
embodiment.
[0095] FIG. 14 shows the cleaning process sequence according to the
present embodiment. When the process is started, first in step S1
an automatic pressure control valve (APC) (not shown) is closed,
thus closing the main evacuation line of the turbo pump 14 while
opening the roughing vacuum pump line 16 of the dry pump (DP)
16.
[0096] Next, in step S2, a nitrogen gas is introduced through the
vent line 13 at a flow rate as high as, for example, 70,000 cc per
minute. The introduction of the large amount of nitrogen gas
through the vent line 13 causes a rapid increase in pressure, thus
causing the particles in the chamber 1 to separate. The separated
particles are carried away through the roughing vacuum pump line
16.
[0097] In step S3, the internal pressure of the chamber stabilizes
at a certain value depending on the performance of the roughing
vacuum pump 15 and the flow rate of the nitrogen gas. In this
condition, in step S4 a positive or negative high voltage is
repetitively applied to the stage from the electrostatic power
supply unit 5. For example, +3 kV and 0 V are repetitively applied.
Here, the particles sticking to the inside walls of the chamber are
separated from them in accordance with Maxwell's stress, as
previously described. The separated particles are carried away
together with the nitrogen gas. After the DC high voltage has been
applied a predetermined number of times, the introduction of the
nitrogen gas is stopped in step S5. As the roughing vacuum pump
line is left open, the roughing vacuuming continues.
[0098] In step S6, the valve in the roughing vacuum pump line is
closed, and the APC is opened to evacuate the chamber through the
main vacuum line to a predetermined pressure, for example,
1.3.times.10.sup.-2 Pa (0.1 mTorr), by means of the turbo pump 15.
The entire flow is repeated as needed.
[0099] To verify the effectiveness of this cleaning method, the
number of particles passed through the evacuation line (roughing
vacuum pump line) was detected by the laser light scattering method
described in the 11th embodiment, while varying the internal
pressure of the chamber. The results are shown in FIG. 15.
[0100] In FIG. 15, the internal pressure of the chamber is plotted
along the horizontal axis, and the number of particles counted is
plotted along the vertical axis. As can be seen, when the internal
pressure of the chamber is lower than about 1333.22 Pa (10 Torr),
no particles are detected in the evacuation line. When the pressure
exceeds about 1333.2 Pa, particles begin to be detected, and
thereafter, the number of particles removed increases as the
internal pressure of the chamber rises.
[0101] It has been discovered that the reason that there are no
particles passing through the evacuation line at pressures lower
than about 1333.22 Pa (10 Torr) is because the gas viscous force
imparted to the particles is small when the pressure is low.
Accordingly, when carrying away the particles, the effectiveness
increases as the internal pressure of the chamber is raised, and it
is preferable to set the chamber pressure, for example, at
6.7.times.10.sup.3 Pa (50 Torr) or higher.
[0102] The means employed in step S4 to separate the particles was
the high voltage application which utilizes Maxwell's stress, but
instead, any of the previously described particle separation method
may be used here. That is, use may be made of the Coulomb force or
of the shock wave generated by a rapid introduction of a gas, or
the thermal stress or thermophoretic force may be used by
controlling the temperature of the stage, and in addition,
mechanical vibrations may be applied.
Embodiment 13
[0103] In the 12th embodiment described above, as priority is given
to carrying away the particles by utilizing the gas flow, the
application of the high voltage for separating the particles is
performed in a relatively high pressure atmosphere. However, it is
known that if the particles are to be separated or scattered by
making effective use of Maxwell's stress occurring due to the high
voltage application, the efficiency increases when the high voltage
application is performed in a low pressure atmosphere. Further, as
described in the sixth embodiment, the scattering of particles
utilizing the gas shock wave can also be performed more efficiently
at lower pressures.
[0104] In view of this, in the present embodiment, provisions are
made to perform the cleaning process of the 12th embodiment after
performing the introduction of the purge gas and the application of
the high voltage at a low pressure as preprocessing steps. That is,
in the preprocessing steps, the particles are separated from the
inside walls of the chamber in a low pressure atmosphere, and after
that, the pressure is increased and the separated particles are
carried away. This enhances the particle separation effect as well
as the removal effect of the separated particles.
[0105] FIG. 16 shows a flow illustrating the preprocessing steps of
the present embodiment. When the preprocessing is started, first,
in step S11, the internal pressure of the chamber is controlled to
the pressure used in the actual process (for example, 0.2 Pa (150
mTorr) and nitrogen gas is introduced. Here, the main evacuation
line is used, and the chamber is evacuated by the turbo pump 14 and
maintained at the predetermined pressure. In this case, the
separation of particles by an impact force also occurs more
effectively.
[0106] Next, in step S12, the high voltage application, which
utilizes Maxwell's stress, is performed in order to separate the
particles sticking to the inside walls of the chamber. The method
of the high voltage application is the same as that employed in
step S4 in FIG. 13. However, in step S4 in FIG. 13, the pressure
was 6.7.times.10.sup.3 Pa (50 Torr), but the pressure in this
preprocessing step is 2.0 Pa (0.15 Torr).
[0107] In step S13, the introduction of the nitrogen gas is
stopped, and the chamber is evacuated to about 1.3.times.10.sup.-2
Pa (0.1 mTorr) by the turbo pump. Then, the process is repeated
again, as needed. When the preprocessing is completed after being
repeated a predetermined number of times, the process proceeds to
the flow of FIG. 14 (12th embodiment). When the main process of the
12th embodiment is performed after performing the preprocessing, a
larger number of particles can be separated or scattered and thus
removed than would be the case if the preprocessing were not
performed.
[0108] The high voltage application which utilizes Maxwell's stress
has been described as being the means used in the preprocessing
step to separate the particles, but instead, use may be made of the
Coulomb force or of the shock wave generated by a rapid
introduction of a gas, or the thermal stress or thermophoretic
force may be used by controlling the temperature of the stage and,
in addition, mechanical vibrations may be applied.
[0109] FIG. 17 is a graph showing how the number of particles
varies when the preprocessing is performed in comparison with the
case where the preprocessing is not performed. In the figure, the
horizontal axis represents the number of times that actual etching
was carried out, and the vertical axis represents the number of
particles remaining on the wafer. The number of times "1"
corresponds to the initial condition of the chamber, showing that
nearly 3,000 particles were initially present. Thereafter, up to
the number of times "7", actual etching was carried out while
performing the particle removal process without preprocessing;
then, between the number of times "7" and "8", the particle removal
was not performed, and from the number of times "8" to "11", the
particle removal process with preprocessing was performed.
[0110] As shown in FIG. 17, as the particle removal process without
preprocessing was repeated, the number of particles decreased down
to about 1000, but thereafter, the number of particles did not
decrease further even when the process was further repeated. After
that, according to a series of experiments conducted in the same
chamber, the particle removal process was not performed between the
number of times "7" and "8" and, after the condition returned to
the initial condition shown at the number of times "8", the
particle removal process with preprocessing was performed, as a
result of which the number of particles could be reduced to 500 or
less. In the example of FIG. 17, as the experiment was started in
the condition in which a large number of particles were present,
many particles remained unremoved even after the particle removal
process with preprocessing was performed.
[0111] FIG. 18 shows correlation between the number of particles
remaining on the wafer and the number of repetitions of the
particle removal process with preprocessing when the mass
production process was performed using conventional mass production
equipment by performing the particle removal process with
preprocessing according to the present invention. The horizontal
axis represents the number of repetitions of the particle removal
(NPPC: Non-Plasma Particle Cleaning) process with preprocessing,
and the vertical axis represents the number of particles counted.
Immediately after the apparatus was started up, nearly 140
particles of diameter 200 nm or larger (.gtoreq.200 nm.phi.) were
present, but when the process was performed and the particle
cleaning process with preprocessing was repeated three times, the
number of particles decreased to about 10, achieving a condition
generally known as "particle spec", i.e., less than 20. In this
way, when there is contamination due to particles, for example,
immediately after the startup of the apparatus, the contamination
due to particles can be greatly reduced by performing the process
of the present embodiment in place of the traditionally employed
dummy run or seasoning or pump and purge.
Embodiment 14
[0112] As described in the eighth embodiment, the scattering of
particles can be induced by applying mechanical vibrations. The
present inventor et al. have found that the scattering of
particles, caused presumably by mechanical vibrations, also occurs
during the movement of the wafer stage or when the stage comes to a
stop. Not only the scattering of particles off the wafer stage, but
also the separation of particles off the inside walls, including
the upper electrode disposed opposite the wafer stage, was
observed. Vibrations due to the movement of the wafer stage can
also be transmitted via a gas remaining in the chamber. In the
present embodiment, the separation effect is enhanced by
introducing a wafer stage driving sequence in the particle removal
process described in the 12th embodiment. The flow of the present
embodiment is the same as the flow of the 13th embodiment (FIG.
13), except that step S35 is added between step S3 and step S4.
[0113] FIG. 19 shows step S35. After the pressure is maintained at
about 6.7.times.10.sup.3 Pa (50 Torr) by introducing the nitrogen
gas in step S3 (FIG. 13), the wafer stage is driven repeatedly in
step S35 and is thus moved up and down a plurality of times, before
proceeding to the high voltage application in step S4. The
vibrations generated cause the particles sticking to the inside
walls of the chamber to separate from them, or make the particles
easier to separate, facilitating their separation in the subsequent
high voltage application step.
[0114] When the particles were observed by the laser light
scattering method (11th embodiment) while moving the wafer stage,
scattering particles were observed the instant that the wafer stage
stopped moving upward. This is because the sticking of the
particles is temporarily loosened by the mechanical vibrations
occurring the instant that the wafer stage comes to a stop, and the
particles sticking to the wafer stage scatter upward by inertia,
while the particles sticking to the upper electrode drop by
gravity. The particle separation effect at this time is greater
than that achieved by the high voltage application, and the
separated particles are effectively carried by passing a gas such
as a nitrogen gas at a pressure of 1.3.times.10.sup.3 Pa (10 Torr)
or higher.
[0115] FIG. 20 shows the relationship between the number of
particles and the moving speed of the wafer stage when the wafer
stage is moved upward. In FIG. 20, the horizontal axis represents
the moving speed of the wafer stage, and the vertical axis at left
represents the particle observation ratio, while the vertical axis
at right represents the acceleration sensor value. The particle
observation ratio is the ratio of the number of times particles
were observed to the number of times the stage was driven, and is
proportional to the number of particles separated. The acceleration
sensor value indicates the vibration caused by the stopping of the
wafer stage. As can be seen from the figure, to achieve the effect
of the present embodiment, a higher moving speed is more desirable.
This is because the kinetic energy of the wafer stage works as the
energy that causes the particles to separate and, as the kinetic
energy is proportional to the mass of a moving body and to the
square of its velocity, a greater effect can be obtained when the
wafer stage of large mass is moved at high speed and is caused to
stop. As the acceleration sensor value in FIG. 20 shows, the higher
the moving speed is at the time just before the stopping, the
greater is the vibration.
[0116] While the present embodiment has utilized the vibrations
occurring during the driving of the wafer stage, it will be
recognized that not only the vibrations caused by the movement of
the wafer stage but, if there is any other moving member in the
chamber, the vibrations caused by the movement of such a member can
also be utilized. For example, use can also be made of the
vibrations occurring when driving a rotating mechanism for a magnet
provided to adjust the magnetic field to be applied to the plasma,
an up-down moving mechanism for a pin provided on the wafer stage
for transferring a wafer, or an open/close mechanism for a shutter
provided in the wafer load/unload gate. If there is no such driving
member that generates vibrations in the chamber, a vibration
generating unit, for example, a unit having such a structure as an
impact driver, may be installed to generate the necessary
vibrations.
[0117] The method of utilizing the mechanical vibrations of the
driving members can be applied not only to the 14th embodiment
described here, but also to the preprocessing in the 13th
embodiment. Further, as the application of mechanical vibrations
facilitates the scattering or separation of particles, the method
may be used in combination with any particle scattering or
separating means described in the present invention.
* * * * *