U.S. patent application number 11/932770 was filed with the patent office on 2008-03-20 for static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate.
This patent application is currently assigned to TOKYO ELECTRON LIMITED. Invention is credited to Takashi Fuse, Tadashi Kotsugi, Koji Takeya, Kyo Tsuboi.
Application Number | 20080067429 11/932770 |
Document ID | / |
Family ID | 38557432 |
Filed Date | 2008-03-20 |
United States Patent
Application |
20080067429 |
Kind Code |
A1 |
Fuse; Takashi ; et
al. |
March 20, 2008 |
STATIC ELECTRICITY DEFLECTING DEVICE, ELECTRON BEAM IRRADIATING
APPARATUS, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING
METHOD AND METHOD OF MANUFACTURING SUBSTRATE
Abstract
A substrate processing apparatus which irradiates a substrate
under processing with an electron beam and processes the substrate
with the electron beam is disclosed. The substrate processing
apparatus includes an electron beam generation mechanism which
generates the electron beam, first area having a plurality of first
static electricity deflecting devices whose thicknesses gradually
increase in a traveling direction of the electron beam, and a
second area disposed on a downstream side of the electron beam of
the first area and having a plurality of second static electricity
deflecting devices whose thicknesses are nearly same in the
traveling direction of the electron beam. The substrate processing
apparatus may further include a plurality of lenses whose
thicknesses gradually decrease in the traveling direction of the
electron beam, at least one of the plurality of lenses being
disposed in each of the first area and the second area.
Inventors: |
Fuse; Takashi; (Minato-ku,
JP) ; Kotsugi; Tadashi; (Minato-ku, JP) ;
Tsuboi; Kyo; (Minato-ku, JP) ; Takeya; Koji;
(Minato-ku, JP) |
Correspondence
Address: |
OBLON, SPIVAK, MCCLELLAND MAIER & NEUSTADT, P.C.
1940 DUKE STREET
ALEXANDRIA
VA
22314
US
|
Assignee: |
TOKYO ELECTRON LIMITED
Minato-ku
JP
|
Family ID: |
38557432 |
Appl. No.: |
11/932770 |
Filed: |
October 31, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11615485 |
Dec 22, 2006 |
|
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|
11932770 |
Oct 31, 2007 |
|
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Current U.S.
Class: |
250/492.2 |
Current CPC
Class: |
Y10T 29/49204 20150115;
H01J 2237/03 20130101; H01J 37/1474 20130101; H01L 21/67017
20130101; Y10T 29/49224 20150115; H01J 37/3174 20130101; H01J
37/026 20130101; Y10T 29/49117 20150115; B82Y 40/00 20130101; H01J
37/147 20130101; Y10T 29/49885 20150115; H01L 21/67213 20130101;
B82Y 10/00 20130101; H01J 2237/151 20130101 |
Class at
Publication: |
250/492.2 |
International
Class: |
H01L 21/30 20060101
H01L021/30 |
Foreign Application Data
Date |
Code |
Application Number |
Mar 30, 2006 |
JP |
2006-092639 |
Claims
1. A substrate processing apparatus, comprising: a light source for
irradiating a substrate to be processed with an electron beam; and
a plurality of lenses which are disposed between the light source
and the substrate to be processed, whose thicknesses gradually
decreasing in a traveling direction of the electron beam.
Description
BACKGROUND OF THE INVENTION
[0001] 1. Field of the Invention
[0002] The present invention relates to a static electricity
deflecting device, an electron beam irradiating apparatus, a
substrate processing apparatus, a substrate processing method, and
a method of manufacturing a substrate.
[0003] 2. Description of the Related Art
[0004] In recent years, an exposing method using for example an
electron beam has been accomplished instead of photolithography
technology.
[0005] In a conventional exposing apparatus using an electron beam,
an objective lens that irradiates a wafer with an electron beam and
a static electricity deflecting device that deflects the position
of the electron beam on the wafer are disposed in a cylindrical
column. In the static electricity deflecting device, a plurality of
deflecting electrodes are disposed on an inner wall surface of a
base member composed of cylindrical ceramic such that the
deflecting electrodes are electrically divided as described in for
example Japanese Patent Application Laid-Open No. 2002-231170
(hereinafter this related art is referred to as Patent Document
1).
[0006] In the static electricity deflecting device of such an
exposing apparatus, ceramic or the like is exposed on a
non-electrode are of the inner wall surface of the cylindrical base
member. Thus, a material that dos not easily discharge static
electricity, such as exposed ceramic, tends to be charged up. As a
result, an electron beam is deflected to an undesired position,
resulting in deterioration of exposure accuracy.
[0007] The present invention is made from the foregoing point of
view. An object of the present invention is to provide a static
electricity deflecting device that suppresses occurrence of
charge-up and to an electron beam irradiating apparatus, a
substrate processing apparatus, a substrate processing method, and
a method of manufacturing a substrate that use the static
electricity deflecting device.
SUMMARY OF THE INVENTION
[0008] To solve the foregoing problem, a static electricity
deflecting device of the present invention includes a cylindrical
member having an electron beam passing portion, a plurality of
deflecting electrodes which are disposed on an inner wall surface
of the cylindrical member along a cylindrical axis thereof and each
of which is electrically divided, a plurality of space portions
each of which is connected to a gap portion formed by adjacent two
of the plurality of deflecting electrodes, each of the plurality of
space portions being disposed at an outer position of the gap
portion when each of the plurality of space portions is viewed from
the electron beam passing portion, and a first conductive film
formed in each of the plurality of space portions
[0009] In the structure of the present invention, of electrons that
passed through the electron beam passing portion, electrons that
entered a gap portion of adjacent deflecting electrodes enters into
a space portion. The electrons are discharged by the first
conduction film. Thus, occurrence of charge-up is suppressed. An
electron beam emitted by the electron beam irradiating apparatus
that has such a static electricity deflecting device is not
unnecessarily deflected by charge-up. Thus, the electron beam can
be deflected in a desired manner. An exposing device that has such
an electron beam irradiating apparatus can perform an exposing
process with high accuracy.
[0010] In addition, the deflecting electrode and the first
conductive film are insulated.
[0011] In such a manner, the deflecting electrode and the
conductive film are insulated.
[0012] The space portion is wider than the gap portion.
[0013] In such a structure, since the gap portion is narrowed,
electrons do not easily enter from the electron beam passing
portion to the space portion and electrons that entered into the
space portion do not easily return to the electron beam passing
portion. Electrons that cause charge-up can be captured in the
space portion. In addition, the electron beam is not largely
affected by electrons charged in the insulative area.
[0014] In addition, the space portion is curved.
[0015] In such a structure, when electrons that entered into the
space portion collide with and bounce from the wall surface of the
space portion, they do not easily return to the electron beam
passing portion.
[0016] The first conductive film is disposed in an area that is
visible when each of the plurality of space portions is viewed from
the electron beam passing portion.
[0017] Thus, it is thought that many electrons that enter into the
space portion through the gap portion reaches the area that is
visible when the space portion is viewed from the electron beam
passing portion. Thus, the first conductive film is formed at least
in the area that is visible when the space portion is viewed from
the electron beam passing portion. Thus, electrons can be securely
discharged by the first conductive film.
[0018] In addition, a connection portion that connects the gap
portion and the space portion is disposed.
[0019] In such a structure, since the connection portion is
disposed between the gap portion and the space portion, the area of
which the insulative area is exposed can be decreased.
[0020] Such a structure can be easily manufactured, the
manufacturing cost can be reduced. In addition, adjacent deflecting
electrodes can be securely insulated.
[0021] The connection portion includes a first connection portion
that is connected to the electron beam passing portion, and a
second connection portion that is wider than the first connection
portion and narrower than each of the plurality of space portions
and that is connected to each of the plurality of space
portions.
[0022] In such a structure, since a portion that is not coated with
the conductive film can be decreased in the space portion,
charge-up can be suppressed.
[0023] In addition, a second conductive film that electrically
connects each of the deflecting electrodes and that is disposed in
the connection portion insulated from the first conductive film is
provided.
[0024] In such a structure, electrons do not easily enter from the
electron beam passing portion to the space portion. In addition,
electrons that entered into the space portion do not easily return
to the electron beam passing portion. Moreover, the electron beam
is not largely affected by electrons charged in the insulative
area. In addition, since electrons that entered into the connection
portion pass between two second conductive films, the potential
therebetween prevents the electrons from entering into the space
portion.
[0025] In addition, a connection conductive film that electrically
connect the first conductive film disposed in each space portion is
provided.
[0026] In such a structure, since a plurality of first conductive
films can be collectively grounded, the structure of the static
electricity deflecting device can be simplified.
[0027] In addition, the first conductive film is grounded.
[0028] In such a structure, electricity stored in the first
conductive film can be quickly discharged.
[0029] In addition, an insulative area is disposed between the
deflecting electrode and the first conductive film.
[0030] In such a structure, the deflecting electrode and the first
conductive film can be insulated.
[0031] In addition, the deflecting electrode and the first
conductive film are made of the same material.
[0032] In such a manner, the deflecting electrode and the first
conductive film can be made of the same material.
[0033] In addition, the material of the cylindrical member is
ceramic whose volume resistivity is 10.sup.7 to 10.sup.10
ohmcm.
[0034] Thus, as the material of the cylindrical member, ceramic
whose volume resistivity is 10.sup.7 to 10.sup.10 ohmcm can be
used.
[0035] In addition, the deflecting electrode is composed of a metal
film.
[0036] Thus, as the deflecting electrode, a metal film can be
used.
[0037] In addition, the metal film is a platinum group metal.
[0038] In such a manner, a platinum group metal can be used. Thus,
when the front surface of the electrode is cleaned with active
oxygen gas, the electrode is not insulated.
[0039] In addition, the platinum group metal is one of ruthenium,
rhodium, palladium, osmium, iridium, and platinum.
[0040] Thus, as the platinum group metal, ruthenium, rhodium,
palladium, osmium, iridium, and platinum can be used.
[0041] In addition, the deflecting electrode is made of a
conductive oxide.
[0042] Thus, as the deflecting electrode, a conductive oxide can be
used. When the electron beam irradiating apparatus that has the
static electricity deflecting device is cleaned with a strong
oxidizer, the apparatus is not easily oxidized.
[0043] In addition, the conductive oxide is one of ruthenium oxide,
iridium oxide, and platinum oxide.
[0044] Thus, as the conductive oxide, ruthenium oxide, iridium
oxide, or platinum oxide can be used.
[0045] In addition, a temperature adjustment mechanism that can set
the static electricity deflecting device at a predetermined
temperature is also provided.
[0046] In the electron beam irradiating apparatus having the static
electricity deflecting device, when the deflecting electrode is
heated by the temperature adjustment mechanism and the interior of
the electron beam irradiating apparatus is cleaned with active
oxygen gas, a contaminant that adheres to the front surface of the
deflecting electrode can be effectively removed.
[0047] The electron beam irradiating apparatus according to the
present invention is an electron beam irradiating apparatus that
includes an electron gun that emits an electron beam and a static
electricity deflecting device that controls the electron beam. The
static electricity deflecting device includes a cylindrical member
having an electron beam passing portion, a plurality of deflecting
electrodes that are disposed on an inner wall surface of the
cylindrical member along a cylindrical axis thereof and each of
which is electrically divided, a plurality of space portions each
of which is connected to a gap portion formed by adjacent two of
the plurality of deflecting electrodes, each of the plurality of
space portions being disposed at an outer position of the gap
portion when each of the plurality of space portions is viewed from
the electron beam passing portion, and a first conductive film
formed in each of the plurality of space portions
[0048] In the structure of the present invention, of electrons that
passed through the electron beam passing portion, electrons that
entered into a gap portion of adjacent deflecting electrodes enters
into a space portion. The electrons are discharged by the first
conduction film. Thus, occurrence of charge-up is suppressed. An
electron beam emitted by the electron beam irradiating apparatus
that has such a static electricity deflecting device is not
unnecessarily deflected by charge-up. Thus, the electron beam can
be deflected in a desired manner. An exposing device that has such
an electron beam irradiating apparatus can perform an exposing
process with high accuracy.
[0049] As described above, according to the present invention,
occurrence of charge-up can be suppressed and exposure accuracy can
be prevented from deteriorating.
[0050] These and other objects, features and advantages of the
present invention will become more apparent in light of the
following detailed description of a best mode embodiment thereof,
as illustrated in the accompanying drawings.
BRIEF DESCRIPTION OF DRAWINGS
[0051] FIG. 1 is a plan view showing an outline of the structure of
a substrate processing apparatus according to an embodiment of the
present invention;
[0052] FIG. 2 is a perspective view describing an outline of the
structure of an atmospheric aligner shown in FIG. 1;
[0053] FIG. 3 is a perspective view describing an outline of the
structure of a heat processing section shown in FIG. 2;
[0054] FIG. 4 is a sectional view describing an outline of the
structure of the heat processing section shown in FIG. 2;
[0055] FIG. 5 is a sectional view describing an outline of the
structure of the atmospheric aligner shown in FIG. 2;
[0056] FIG. 6 is a plan view describing an outline of the structure
of a vacuum preparation chamber shown in FIG. 1;
[0057] FIG. 7 is a sectional view describing an outline of the
structure of a reduced pressure transferring chamber shown in FIG.
1;
[0058] FIG. 8 is a plan view describing an outline of the structure
of an exposure processing section shown in FIG. 1;
[0059] FIG. 9 is a flow chart describing a process flow with
respect to the structure of the substrate processing apparatus
shown in FIG. 1;
[0060] FIG. 10 is a schematic sectional view describing the
structure of the exposure processing chamber shown in FIG. 1;
[0061] FIG. 11 is a sectional view describing an outline of the
structure of principal portions of the exposure processing chamber
shown in FIG. 10;
[0062] FIG. 12 is a sectional view describing an outline of the
structure of principal portions of the exposure processing chamber
shown in FIG. 10;
[0063] FIG. 13 is a plan view describing an outline of the
structure of principal portions of a stage shown in FIG. 12;
[0064] FIG. 14 is a schematic diagram describing the structure of a
static electricity chuck mechanism section of the exposure
processing chamber shown in FIG. 10;
[0065] FIG. 15 is a conceptual diagram showing a basic structure of
an electron beam irradiating apparatus disposed in the exposure
processing chamber shown in FIG. 10;
[0066] FIG. 16 is a perspective view showing an outline of a static
electricity deflecting device of a column of the electron beam
irradiating apparatus shown in FIG. 15;
[0067] FIG. 17 is a top view showing the static electricity
deflecting device shown in FIG. 16;
[0068] FIG. 18 is a perspective view showing an outline of the
static electricity deflecting device shown in FIG. 16, the static
electricity deflecting device being cut in an axial direction;
[0069] FIG. 19 is a partial plan view showing the static
electricity deflecting device shown in FIG. 16;
[0070] FIG. 20 is a top view showing a static electricity
deflecting device according to a modification of the
embodiment;
[0071] FIG. 21 is a top view showing a static electricity
deflecting device according to another modification of the
embodiment;
[0072] FIG. 22 is a top view showing a static electricity
deflecting device according to another modification of the
embodiment;
[0073] FIG. 23 is a perspective view showing an outline of a lens
of the column of the electron beam irradiating apparatus shown in
FIG. 15;
[0074] FIG. 24 is a sectional view showing an outline of the lens
shown in FIG. 23, taken along line A-A';
[0075] FIG. 25 is a plan view describing an outline of the
structure of the substrate processing apparatus shown in FIG.
1;
[0076] FIG. 26 is a sectional view describing an outline of the
structure of the substrate processing apparatus shown in FIG.
1;
[0077] FIG. 27 is a sectional view describing an outline of the
structure of the substrate processing apparatus shown in FIG.
1;
[0078] FIG. 28 is a perspective view describing an outline of the
structure of the substrate processing apparatus shown in FIG.
1;
[0079] FIG. 29 is a plan view describing an outline of the
structure of the substrate processing apparatus shown in FIG.
1;
[0080] FIG. 30 is a schematic diagram describing an outline of the
structure of a control system of the substrate processing apparatus
shown in FIG. 1;
[0081] FIG. 31 is a plan view showing the structure of a substrate
processing apparatus according to another embodiment of the present
invention;
[0082] FIG. 32 is a perspective view showing an outline of the
structure of Helmholtz coils shown in FIG. 31;
[0083] FIG. 33 is a sectional view describing an outline of a
static electricity deflecting device according to another
embodiment of the present invention;
[0084] FIG. 34 is a sectional view describing an outline of a
static electricity deflecting device according to another
embodiment of the present invention;
[0085] FIG. 35 is a sectional view describing an outline of a
static electricity deflecting device according to another
embodiment of the present invention;
[0086] FIG. 36 is a sectional view describing an outline of a
manufacturing process of the static electricity deflecting device
shown in FIG. 17;
[0087] FIG. 37 is a sectional view describing an outline of a
manufacturing process of the static electricity deflecting device
shown in FIG. 17;
[0088] FIG. 38 is a perspective view describing an outline of a
static electricity deflecting device according to another
embodiment of the present invention;
[0089] FIG. 39 is a perspective view describing an outline of a
static electricity deflecting device according to another
embodiment of the present invention;
[0090] FIG. 40 is a perspective view describing an outline of
principal sections of the static electricity deflecting device
shown in FIG. 39;
[0091] FIG. 41 is a perspective view describing an outline of the
static electricity deflecting device shown in FIG. 40;
[0092] FIG. 42 is a perspective view describing an outline of the
static electricity deflecting device shown in FIG. 40;
[0093] FIG. 43 is a perspective view describing an outline of the
static electricity deflecting device shown in FIG. 39;
[0094] FIG. 44 is a perspective view describing an outline of the
static electricity deflecting device shown in FIG. 40;
[0095] FIG. 45 is a schematic diagram describing an outline of the
structure of a substrate processing apparatus according to another
embodiment of the present invention;
[0096] FIG. 46 is a sectional view showing an outline of a lens
according to another embodiment of the present invention;
[0097] FIG. 47 is a sectional view showing an outline of a lens
according to another embodiment of the present invention; and
[0098] FIG. 48 is a sectional view showing an outline of a lens
according to another embodiment of the present invention.
DESCRIPTION OF PREFERRED EMBODIMENTS
[0099] Next, with reference to the accompanying drawings,
embodiments of the present invention will be described.
[0100] FIG. 1 is a schematic diagram showing the structure of a
system of for example an exposing device as a substrate processing
apparatus according to an embodiment of the present invention. The
system of the exposing device designated as reference numeral 1 can
be freely inline connected to another device, for example a resist
processing device 2 (on a C/D side of FIG. 1). The resist
processing device 2 has a coating device that coats resist solution
on a process surface of a substrate under processing, for example a
semiconductor wafer W (the coating device is referred to as a
coater (COT)) and a developing device that develops a resist film
formed on the process surface of the semiconductor wafer W (the
developing device is referred to as a developer (DEV)). The
exposing device 1 is composed of an atmospheric aligner section 3
(designated as S1 in FIG. 1) as a first unit (an interface section)
having a linear space section and an exposure processing section 5
(designated as S2 in FIG. 1) as a second unit. The atmospheric
aligner section 3 conveys a semiconductor wafer W in atmospheric
pressure (non-reduced pressure). The exposure processing section 5
conveys a semiconductor wafer W in reduced pressure
(non-atmospheric pressure) and performs an exposing process for the
semiconductor wafer W.
[0101] Disposed on the resist processing device 2 side are a
passing portion 10, a receiving portion 11, and a conveying
mechanism 12. The passing portion 10 has a stage with an alignment
mechanism (not shown) that physically holds and aligns a
semiconductor wafer W to be passed to the exposing device 1. The
receiving portion 11 has a stage with an alignment mechanism (not
shown) that physically holds and aligns a semiconductor wafer W
received from the exposing device 1. The conveying mechanism 12 is
of a self propelled type and freely conveys a semiconductor wafer W
to the passing portion 10 and the receiving portion 11.
[0102] Disposed on the resist processing device 2 side are also a
cassette section 13 and an operation panel 14 that face an
operator's working space area A. The cassette section 13 can hold
at least one holding member for example a cassette that can contain
a plurality of semiconductor wafers W that are loaded and unloaded
by the conveying mechanism 12. The operation panel 14 is an
operation mechanism with a display mechanism for a control
mechanism that controls the resist processing device 2 side.
[0103] Disposed on the resist processing device 2 side is also an
alignment mechanism 15 that faces the operator's working space area
A side (non-working space area side). The alignment mechanism 15
aligns a semiconductor wafer W to be transferred to the passing
portion 10 and/or a semiconductor wafer W received from the
receiving portion 11 with reference to a cutout portion for example
a notch portion or an orientation flag portion thereof. The
conveying mechanism 12 can freely load and unload a semiconductor
wafer W to and from the alignment mechanism 15.
[0104] Disposed in the atmospheric aligner section 3 (designated as
S1 in FIG. 1) are a self-propelled conveying mechanism 20 and an
alignment mechanism 21. The self-propelled conveying mechanism 20
can freely convey a semiconductor wafer W to the passing portion 10
and the receiving portion 11 disposed on the resist processing
device 2 side. The alignment mechanism 21 is disposed on the
working space area A side (on one end side in the longitudinal
directions of the atmospheric aligner section 3). The alignment
mechanism 21 aligns a semiconductor wafer W that has been received
from the passing portion 10 on the resist processing device 2 side
and/or a semiconductor wafer W to be transferred to the receiving
portion 11 on the resist processing device 2 side with reference to
a cutout portion, for example a notch portion or an orientation
flat portion thereof. The self-propelled conveying mechanism 20 can
freely load and unload a semiconductor wafer W to and from the
alignment mechanism 21.
[0105] The alignment accuracy of the alignment mechanism 21 is
important to improve the yield of semiconductor wafers W in the
exposure process. Thus, the alignment mechanism 21 has higher
alignment accuracy than does the alignment mechanism 15 on the
resist processing device 2 side and/or the passing portion 10 or
the receiving portion 11 on the resist processing device 2
side.
[0106] Disposed in the atmospheric aligner section 3 (designated as
S1 in FIG. 1) is also a heat processing section 22 that performs a
Post Exposure Bake (PEB) process as a heat process for a
semiconductor wafer W that has been exposed in the exposure
processing section 5. The heat processing section 22 faces the
working space area A side of the self-propelled conveying mechanism
20 (on the other end side in the longitudinal directions of the
atmospheric aligner section 3) as shown in FIG. 2, FIG. 3, and FIG.
4.
[0107] The heat processing section 22 has a loading/unloading
opening 25 through which a semiconductor wafer W is loaded and
unloaded to and from the heat processing section 22. The heat
processing section 22 contains a heating plate 26 as a heat process
mechanism and a temperature adjustment plate 27 as a temperature
adjustment mechanism. The heating plate 26 has a heating mechanism,
for example a heater 31, that generates predetermined heat, for
example in the range from 75.degree. C. to 650.degree. C.,
preferably for example in the range from 120.degree. C. to
300.degree. C., more preferably for example 250.degree. C. for a
semiconductor wafer W. The temperature adjustment plate 27 is a
temperature adjustment mechanism that adjusts the temperature of a
semiconductor wafer W to a predetermined temperature, for example
23.degree. C. that is nearly the same as the inner temperature of
the atmospheric aligner section 3 or the inner temperature of the
resist processing device 2.
[0108] Of course, the temperature adjustment plate 27 adjusts the
temperature of a semiconductor wafer W before and after it is
conveyed to the heating plate 26. Instead, the temperature
adjustment plate 27 may adjust the temperature of a semiconductor
wafer W received from the passing portion 10 on the resist
processing device 2 side by the self-propelled conveying mechanism
20 and/or a semiconductor wafer W to be conveyed to the receiving
portion 11 of the resist processing device 2 by the self-propelled
conveying mechanism 20 without conveying the semiconductor wafer W
to the heating plate 26. The temperature adjustment plate 27 may
adjust the temperature of a semiconductor wafer W before and/or
after it is conveyed to the alignment mechanism 21.
[0109] As shown in FIG. 3 and FIG. 4, the temperature adjustment
plate 27 can be horizontally moved between a standby position B and
an upper position B of the heating plate 26 by a moving mechanism
(not shown). A support mechanism 30 is disposed below the
temperature adjustment plate 27 and at the standby position B of
the temperature adjustment plate 27. The support mechanism 30 has a
plurality of support pins, for example three support pins, that
protrude from cutout portions 28 of the temperature adjustment
plate 27 and point-support the rear surface of the semiconductor
wafer W.
[0110] In addition, the heating plate 26 has a support mechanism 33
with a plurality of support pins, for example three support pins,
that raise and lower and point-support the rear surface of a
semiconductor wafer W. Thus, a semiconductor wafer W conveyed by
the self-propelled conveying mechanism 20 through the
loading/unloading opening 25 is received at the up position of the
support mechanism 30. The semiconductor wafer W is supported by the
support pins 29. Thereafter, when the support mechanism 30 is
lowered, the semiconductor wafer W on the support points 29 is
transferred to the temperature adjustment plate 27.
[0111] After the temperature adjustment plate 27 is raised to the
up position of the heat processing section 22, the support
mechanism 33 is raised. The semiconductor wafer W on the
temperature adjustment plate 27 is supported on the support pins
32. When or after the temperature adjustment plate 27 is moved to
the standby position, the support mechanism 33 is lowered and the
semiconductor wafer W is transferred to the heating plate 26.
[0112] As shown in FIG. 2, a fan filter unit (FFU) 40 is disposed
above the atmospheric aligner section 3 (designated as S1 in FIG.
1). The FFU 40 generates a down-flow of clean air in the
atmospheric aligner section 3. The temperature, the humidity,
and/or concentration of a chemical compound, for example amine, of
the clean air are controlled. The concentration of amine is
controlled to a predetermined value for example 1 ppb or less by a
filter mechanism (not shown). In addition, the inner pressure of
the atmospheric aligner section 3 is controlled to a predetermined
value.
[0113] Next, a conceptual example of suppressing occurrence of
cross contamination in the atmospheric aligner section 3
(designated as S1 in FIG. 1) will be described. Now, the height of
each of a loading opening 10a for a semiconductor wafer W from the
passing portion 10 on the resist processing device 2 side and a
unloading opening 11a for a semiconductor wafer W to the receiving
portion 11 on the resist processing device 2 side is designated as
h1. The height of a loading/unloading opening 41 for a
semiconductor wafer W on the exposure processing section 5 side is
designated as h2. The height of a loading/unloading opening 25 for
a semiconductor wafer W loaded and unloaded to and from the heat
processing section 22 is designated as h3. Since the exposure
processing section 5 is operated in reduced pressure and the air
cleanness class required in the exposure process is higher than
that for the environment in the resist processing device 2, the
condition of h2.gtoreq.h1 is kept, preferably h2>h1. In
addition, from a point of view of suppressing the influence of heat
from the loading/unloading opening 25 of the heat processing
section 22, the condition of h3.gtoreq.(h1 or h2) is kept,
preferably h3>(h1 or h2).
[0114] When the height of the loading opening 10a and/or the
unloading opening 11a and the height of the loading/unloading
opening 41 are nearly the same, it is preferred that they not just
face each other, but with a slight deviation.
[0115] Next, another conceptual example of suppression of influence
of heat from the loading/unloading opening 25 of the heat
processing section 22 will be described with reference to FIG. 5. A
wall 50 is disposed above and below the loading/unloading opening
25 through which a semiconductor wafer W is loaded to and from the
heat processing section 22. The wall 50 shields inner atmosphere of
the heat processing section 22 from inner atmosphere of the
self-propelled conveying mechanism 20. A venting mechanism, for
example a vacuum pump 52, generates an air flow 51 in the heat
processing section 22 so that the air flow 51 occurs from the
temperature adjustment plate 27 side to the heating plate 26
side.
[0116] With an opening and closing mechanism 54 that can open and
close an opening portion of the loading/unloading opening 25,
radiation of heat can be suppressed. With this structure, an area
for a down-flow DF in the atmospheric aligner section 3 can be
decreased. As a result, the FFU 40 can be downsized. As the merits,
the system can be downsized and the foot print and cost of the
apparatus can be decreased. When a control mechanism 53 (and/or a
heat generation mechanism such as a power supply mechanism) of the
heat processing section 22 is disposed above the heat processing
section 22, the influence of heat to a semiconductor wafer W in the
atmospheric aligner section 3 can be suppressed.
[0117] As shown in FIG. 6, a vacuum preparation chamber 60 is
disposed in the exposure processing section 5. The vacuum
preparation chamber 60 is a substrate loading and unloading section
through which a semiconductor wafer W is loaded and unloaded by the
self-propelled conveying mechanism 20 through the loading/unloading
opening 41. Disposed at the loading/unloading opening 41 of the
vacuum preparation chamber 60 is an opening and closing mechanism
61 that air-tightly seals the interior of the vacuum preparation
chamber 60. The vacuum preparation chamber 60 has a holding table
63 with a support mechanism (not shown). The support mechanism has
a plurality of support pins 62 for example three support pins 62
that point-support the bottom surface of a semiconductor wafer W
that can be freely transferred by the self-propelled conveying
mechanism 20.
[0118] In addition, the holding table 63 has a temperature
adjustment mechanism (not shown). The temperature adjustment
mechanism adjusts the temperature of the holding table 63 to a
temperature lower than the temperatures of sections of the resist
processing device 2, for example the temperature of a semiconductor
wafer W processed by the coating device (coater COT) that coats
resist solution on the semiconductor wafer W, the ambient
temperature in the resist processing device 2, and/or the ambient
temperature in the atmospheric aligner section 3, for example in
the range from a fraction of 1.degree. C. to 3.degree. C.,
preferably in the range from 0.1.degree. C. to 0.5.degree. C. As a
result, the accuracy of the exposure process can be prevented from
deteriorating since a resist film formed on a semiconductor wafer W
can be prevented from shrinking and expanding.
[0119] In addition, at least one image detection mechanism is
disposed at an upper position of a semiconductor wafer W held on
the holding table 63. For example, a plurality of CCD cameras 65
are disposed so that an image of at least a peripheral portion of a
semiconductor wafer W can be freely detected. These CCD cameras 65
are disposed to detect at least an arrangement angle .theta. of a
semiconductor wafer W. The CCD cameras 65 are disposed in such a
manner that at least one CCD camera 65, preferably two CCD cameras
65, are disposed on the Y axis perpendicular to the conveying
directions of a semiconductor wafer W by the self-propelled
conveying mechanism 20, namely on the X axis and at least one CCD
camera 65 is disposed with an angle on the Y axis. Thus, based on
the arrangement angle .theta. and reference coordinates
pre-registered on the X and Y axes, namely registered data and
detected data are compared. The difference is calculated and
detected by a control mechanism 166. In FIG. 6, Q denotes the
center position of a semiconductor wafer W.
[0120] In addition, a conveying opening 66 is disposed in the
directions on the Y axis of the vacuum preparation chamber 60. A
semiconductor wafer W is conveyed to a reduced pressure conveying
chamber (that will be described later) through the conveying
opening 66.
[0121] An opening and closing mechanism 67 that can air-tightly
close the conveying opening 66 is disposed in the conveying opening
66. The vacuum preparation chamber 60 has an air venting nozzle 68
through which a venting mechanism, for example an exhaust pump 69,
vents the vacuum preparation chamber 60. Thus, the supply amount of
a predetermined gas, for example inert gas such as nitrogen gas,
supplied from a gas supplying mechanism (not shown) and the amount
of gas vented of the exhaust pump 69 can be freely set between a
predetermined degree of vacuum and atmospheric pressure under the
control of the control mechanism 166.
[0122] Next, with reference to FIG. 1 and FIG. 7, the reduced
pressure conveying chamber 70 will be described. Disposed in the
reduced pressure conveying chamber 70 is a conveying mechanism 72
that conveys a semiconductor wafer W to the vacuum preparation
chamber 60 through a conveying opening 71. The conveying mechanism
72 has an arm 73 that is a support mechanism having a surface
contact function of at least one position of the peripheral portion
of a semiconductor wafer W and/or a point contact function of a
plurality of points on the rear surface of the semiconductor wafer
W.
[0123] Disposed in the reduced pressure conveying chamber 70 is an
gas venting chamber 80 opposite to the vacuum preparation chamber
60 of the reduced pressure conveying chamber 70. The gas venting
chamber 80 is connected to the atmosphere of the reduced pressure
conveying chamber 70. An air venting nozzle 81 is disposed below
the gas venting chamber 80. A venting mechanism, for example a
vacuum pump 83, vents not only the gas venting chamber 80 but the
reduced pressure conveying chamber 70 from the air venting nozzle
81 through an air venting path 82.
[0124] Thus, venting means is not directly connected to the reduced
pressure conveying chamber 70. Since the conveying mechanism 72 is
disposed in the reduced pressure conveying chamber 70 and the
venting mechanism is connected thereto, a problem of which the
reduced pressure conveying chamber 70 becomes large is solved.
Thus, the apparatus can be downsized and slimmed. In addition, even
if the vacuum pump 83 and so forth get defective or the air venting
path 82 is maintained, when the gas venting chamber 80 is removably
structured, the maintenance time can be short. With respect to the
relationship of a volume 70a of the reduced pressure conveying
chamber 70 and a volume 80a of the gas venting chamber 80, the
condition of volume 70a.gtoreq.volume 80a is kept, more preferably
volume 70a>volume 80a. Thus, the throughput of which the reduced
pressure conveying chamber 70 is maintained in a predetermined
degree of vacuum is improved. In addition, the height h4 of the
space section of the reduced pressure conveying chamber 70 is
greater than the height h5 of the space section of the gas venting
chamber 80. As a result, the gas venting chamber 80 can be vented
at high venting speed.
[0125] In addition, as shown in FIG. 8, the conveying mechanism 72
of the reduced pressure conveying chamber 70 is controlled by the
control mechanism 166. When there is an error as a result of a
calculation based on data captured by the CCD cameras 65, a
conveying angle .theta.1 of the arm 73 for a semiconductor wafer W
held by the arm 73 to an exposure processing chamber 4 is varied
and compensated (the position is adjusted by a rotation operation
of the arm 73) based on information of the error. The semiconductor
wafer W held by the arm 73 is conveyed through a loading opening 89
to a stage 91 of the exposure processing chamber 4 in which reduced
pressure is maintained. In other words, the semiconductor wafer W
is aligned and compensated on the stage 91. The loading opening 89
of the reduced pressure conveying chamber 70 and the loading
opening 89 of the exposure processing chamber 4 can be air-tightly
opened and closed.
[0126] In addition, the stage 91 in the exposure processing chamber
4 can freely move a semiconductor wafer W in directions on the X1
axis (left and right directions shown in FIG. 8) and directions on
the Y1 axis (upper and lower directions shown in FIG. 8). When
there is an error as a result of a calculation based on data
captured by the CCD cameras 65, the control mechanism 166
horizontally aligns the semiconductor wafer W held on the stage 91
with respect to the X and Y axes based on the information about the
error. When the semiconductor wafer W is conveyed by varying the
conveying angle .theta.1 of the arm 73 to the exposure processing
chamber 4, the stage 91 of the exposure processing chamber 4 is
moved based on data of which the transfer position of the
semiconductor wafer W by the arm 73 is predicted by the control
mechanism 166.
[0127] Thus, the semiconductor wafer W is aligned at steps shown in
FIG. 9. At step 95, the semiconductor wafer W is aligned on the
resist processing device 2 side as another device. At step 96, the
semiconductor wafer W is aligned in the atmospheric aligner section
3. At these steps, the semiconductor wafer W is aligned in
atmospheric pressure. Thereafter, at step 97, the position of the
semiconductor wafer W is detected by the CCD cameras 65 of the
vacuum preparation chamber 60 in reduced pressure. At step 98,
while the rotation angle of the arm 73 of the reduced pressure
conveying chamber 70 is being adjusted based on position data
detected by the CCD cameras 65, the semiconductor wafer W held by
the arm 73 is aligned in reduced pressure. Thereafter, at step 99,
while the stage 91 of the exposure processing chamber 4 as another
reduced pressure chamber is being moved on the X and Y axes, the
semiconductor wafer W on the stage 91 is aligned in reduced
pressure. The semiconductor wafer W is aligned at a plurality of
positions in atmospheric pressure. Thereafter, the position of the
semiconductor wafer W is detected in reduced pressure. In addition,
the semiconductor wafer W is aligned at a plurality of positions in
reduced pressure. Thus, the accuracy with which the semiconductor
wafer W is aligned is improved.
[0128] As shown in FIG. 10, the exposure processing chamber 4 has
an electron beam irradiating apparatus 500 at a ceiling portion.
The electron beam irradiating apparatus 500 irradiates a
semiconductor wafer W on the stage 91 with an electron beam. The
electron beam irradiating apparatus 500 has an electron gun 501 and
a column 100. As will be described later, the column 100 is divided
into a GL block 560, a CL block 561, a PL block 562, and a RL/OL
block 563. The column 100 also has a venting mechanism, for example
an ion pump 101, that highly vacuum-vents the electron gun
section.
[0129] As shown in FIG. 11, a plurality of air vent lines 106 are
disposed in the vertical direction of the column 100. According to
this embodiment, the air vent lines 106 gradually decrease degrees
of vacuum downwardly from the electron gun 501 to the semiconductor
wafer W, for example, 10.sup.-7 Pa, 10.sup.-6 Pa, and 10.sup.-5 Pa.
The degree of vacuum in an area of which a semiconductor wafer W is
irradiated with an electron beam is set at 10.sup.-5 Pa.
[0130] In this embodiment, the air vent lines 106 are disposed in
areas having different degrees of vacuum. The vent amounts of the
air vent lines 106 are varied such that the degrees of vacuum of
the areas vary. Since the degrees of vacuum decrease downwardly,
straightness of the electron beam can be improved or energy can be
prevented from lowering.
[0131] In this embodiment, the air vent lines 106 are disposed in
the areas that differ in degrees of vacuum and the vent amounts of
the air vent lines 106 are varied. Instead, a plurality of air vent
lines 106 having the same vent amount may be used such that the
degrees of vacuum are varied by changing the number of air vent
lines 106. In this case, the densities of the air vent lines
decrease downwardly. In other words, the air vent lines 106 are
disposed such that the amounts of vent substantially decrease
downwardly in the column 100.
[0132] In addition, as shown in FIG. 10, the exposure processing
chamber 4 has an air venting duct 102 in a side wall opposite to
the reduced pressure conveying chamber 70 of the stage 91. A
venting mechanism, for example, a high vacuum pump (turbo molecular
pump) 104 that vents the inside of the exposure processing chamber
4 through an air vent line 103 is disposed. Disposed at a ceiling
section of the exposure processing chamber 4 is also a mark
detection mechanism 105 that optically detects a mark formed on the
process surface of a semiconductor wafer W held on the stage 91.
When necessary, the semiconductor wafer W is finally aligned by
moving the stage 91 on the X and Y axes based on the detected
mark.
[0133] In addition, as shown in FIG. 12 and FIG. 13, the stage 91
has a static electricity chuck mechanism 110 that electrostatically
sucks a semiconductor wafer W. In addition, the stage 91 is made of
for example alumina, which is an insulative material. The stage 91
is conductively coated. It is preferred the stage 91 be made of a
material that is light, strong, and non-elastic to reduce the
weight of the moving portion, increase the characteristic
frequency, and reduce the thermal expansion. In addition, it is
preferred that the stage 91 be conductively coated with a thin
film. In other words, when the front surface of the stage 91 is
charged with electrons, they adversely affect a path of an electron
beam. Thus, it is preferred that the entire surface exposed to an
electron beam be conductive such that electrons flow to the ground.
In addition, when the thickness of the conductive member is thick,
an eddy current occurs, resulting in adversely affecting the
electron beam.
[0134] In addition, a ring-shaped member 111 is disposed around the
stage 91. The ring-shaped member 111 is made of an insulative
material, for example alumina. The front surface of the ring-shaped
member 111 is coated with a conductive film. The outer
circumferential portion of the ring-shaped member 111 has a flat
portion 112 whose height is the same as the height of the process
surface of a semiconductor wafer W sucked and held by the static
electricity chuck mechanism 110 of the stage 91. In addition, the
flat portion 112 is level with the semiconductor wafer W. The front
surface of the ring-shaped member 111 is coated with an electron
beam refraction protection film as an eddy current protection
mechanism that suppresses the refraction of an electron beam
emitted from a column 100, namely occurrence of an eddy current.
The film is made of for example titan such as a TiN film. In
addition, the ring-shaped member 111 and the stage 91 are grounded
as shown in FIG. 12.
[0135] In addition, the stage 91 has a heating mechanism, for
example a heater 170. The control mechanism 166 can freely adjust
the temperature of the semiconductor wafer W on the stage 91 to a
predetermined temperature along with a cooling mechanism (not
shown). The predetermined temperature is lower than the temperature
of a semiconductor wafer W in a process section of the resist
processing device 2, for example, the coating device (coater
(COT)), that coats resist solution on the semiconductor wafer W,
the inner temperature of the resist processing device 2, and/or the
inner temperature of the atmospheric aligner section 3. The
predetermined temperature is for example a low temperature in the
range from a fraction of 1.degree. C. to 3.degree. C., preferably
in the range from 0.1.degree. C. to 0.5.degree. C.
[0136] In other words, the accuracy of the exposure process can be
prevented from deteriorating against expansion or shrinkage of the
resist film formed on the semiconductor wafer W. For example, when
a load lock (for example, the vacuum preparation chamber 60) is
vacuum-vented, since heat is removed from the semiconductor wafer
W, the temperature of the semiconductor wafer W that has been just
conveyed to the stage 91 tends to be lower than the temperature of
the semiconductor wafer W in for example the atmospheric aligner
section 3 before the semiconductor wafer W is conveyed to the load
lock. Thus, when the temperature of the stage 91 is lowered for
which the temperature of the semiconductor wafer W is lowered by
vacuum venting, it is not necessary to wait until the temperature
of the semiconductor wafer W conveyed to the stage becomes stable
(namely, expansion of the semiconductor wafer W stops).
[0137] In addition, as shown in FIG. 14, the static electricity
chuck mechanism 110 has a plurality of electrodes, for example two
electrodes, that are a first electrode 300 and a second electrode
301 buried in an insulative member 299 made of an insulator such as
ceramics. A conductive needle 303 that is a conductive mechanism
(grounding mechanism) is disposed outside the second electrode 301.
The conductive needle 303 can be freely moved in a through-hole 302
formed in the insulative member 299 and contacted to a
predetermined position on the rear surface of the semiconductor
wafer W. In addition, a raising and lowering mechanism (first
conductive needle contacting mechanism) 304 is disposed. The
raising and lowering mechanism 304 raises and lowers the conductive
needle 303 so that it contacts the rear surface of the
semiconductor wafer W with a predetermined pressure.
[0138] In addition, a conductive needle 305 that is a conductive
mechanism is disposed at a more outer peripheral position on the
process surface of the semiconductor wafer W than the conductive
needle 303 by a predetermined distance, for example X2 shown in
FIG. 14. The conductive needle 305 can be contacted to a resist
film area of the process surface of the semiconductor wafer W. In
addition, a raising and lowering mechanism (second conductive
needle contacting mechanism) 306 is disposed. The raising and
lowering mechanism 306 raises and lowers the conductive needle 305
so that it contacts the process surface of the semiconductor wafer
W with a predetermined pressure.
[0139] With respect to contacting of the conductive needle 303 and
the conductive needle 305 to a semiconductor wafer W, the
conductive needle 303 is pressed by the raising and lowering
mechanism 304 so that the conductive needle 303 contacts at least a
nitride film formed on the rear surface of the semiconductor wafer
W, for example an SiN film, and an oxide film, for example a
SiO.sub.2 film as a base film thereof. Thus, the raising and
lowering mechanism 304 needs to have a pressing force that causes
the conductive needle 303 to pierce the SiN film. Instead, the
raising and lowering mechanism 304 may cause the conductive needle
303 to pierce a plurality of films for example SiN and SiO.sub.2,
and contact Si. Si 312 is the material of the semiconductor wafer W
itself. Thus, static electricity charged in the semiconductor wafer
W can be effectively removed from the rear surface thereof by the
conductive needle 303. In addition, since the conductive needle 303
does not reach Si 312, which is the material of the semiconductor
wafer W itself, the problem of breakage and so forth of the
semiconductor wafer W itself can be solved.
[0140] On the other hand, since the conductive needle 303 needs to
pierce the SiN film 310, which is a harder film than a film on the
process surface side, as shown in FIG. 18, a conductive hard
material, for example a plurality of pieces of a conductive diamond
331, are buried in a tip portion 330 of the conductive needle 303.
The material of the tip portion 330 or the material of the
conductive needle 303 may be tungsten carbide, alumina titanium
carbide type ceramic (Al.sub.2O.sub.3+TiC), thermite (TiC+TiN),
tungsten, palladium, iridium, or beryllium-copper alloy besides
conductive diamond. Important characteristics for the material of
the conductive needles are conductive, hard, and nonmagnetic.
[0141] With respect to the contacting of the conductive needle 305
on the process surface side of the semiconductor wafer W, the
conductive needle 305 is contacted to for example a circuit pattern
area formed on the process surface side of the semiconductor wafer
W, a resist film formed on the circuit pattern area, and an
antistatic film formed on the resist film. As another example, the
conductive needle is contacted to the circuit pattern area formed
on the process surface side of the semiconductor wafer W, a
conductive film formed on the circuit pattern area, and the resist
film formed on the conductive film.
[0142] As another example, the conductive needle 305 is contacted
to the circuit pattern area formed on the process surface side of
the semiconductor wafer W, a conductive film formed in the circuit
pattern area, and the resist film 316 formed in the circuit pattern
area.
[0143] Thus, the semiconductor wafer W is not directly contacted to
Si of the semiconductor wafer W itself. Instead, since the
conductive needle 305 is contacted to a conductive film formed on
Si of the semiconductor wafer W itself, static electricity charged
in the semiconductor wafer W can be effectively removed from the
process surface side by the conductive needle 305. In addition,
since the conductive needle 305 does not reach Si, which is the
material of the semiconductor wafer W itself, the problem of
breakage and so forth of the semiconductor wafer W itself can be
solved.
[0144] In addition, since the conductive needle 305 does not reach
Si, which is the material of the semiconductor wafer W itself, a
contact hole of the conductive needle 305 formed in the circuit
pattern area and the resist film can be decreased. Thus, the
contacting of the conductive needle 305 does not largely affect the
later processes, for example coating of developing solution on the
semiconductor wafer W in the developing process of the resist
processing device 2. As a result, the yield of semiconductor wafers
W can be improved.
[0145] In addition, as shown in FIG. 14, the conductive needle 303
and the conductive needle 305 can be freely connected to a first
switch terminal 320, a second switch terminal 321, or a third
switch terminal 322 selected through a switch mechanism, for
example a switch SW1. The first switch terminal 320 is connected to
a current detection mechanism, for example an ammeter, that detects
a current that flows in the conductive needle 303 and/or the
conductive needle 305. The second switch terminal 321 is connected
to the ground. Thus, the conductive needle 303 and/or the
conductive needle 305 is grounded through the second switch
terminal 321. The third switch terminal 322 is connected to a power
supply VP5 that applies a predetermined voltage to the conductive
needle 303 and/or the conductive needle 305.
[0146] The term "and/or" of the conductive needle 303 and/or the
conductive needle 305 means that the conductive needle 303 and the
conductive needle 305 are connected and also they are connected to
the first switch terminal 320, the second switch terminal 321, or
the third switch terminal 222. Instead, for each of the conductive
needle 303 and the conductive needle 305, the first switch terminal
320, the second switch terminal 321, and the third switch terminal
322 may be independently provided.
[0147] In addition, data of a current value in the ammeter
connected to the first switch terminal 320 can be monitored by the
control mechanism 166. In addition, for convenience, in the power
supply connected to the third switch terminal 322, a negative
voltage is applied to the conductive needle 303 and the conductive
needle 305. Instead, a positive voltage may be applied to the
conductive needle 303 and the conductive needle 305. When
necessary, the polarities of the voltages applied may be
changed.
[0148] In addition, the first electrode 300 is connected to a
switch mechanism, for example a switch SW2, and another switch
mechanism, for example a switch SW3. The switch SW3 can freely
connect the first electrode 300 to a power supply VP1 that applies
a predetermined negative voltage thereto or a power supply VP2 that
applies a predetermined positive voltage thereto. In addition, the
power supply VP1 and the power supply VP2 can be freely connected
to a power supply VP4 that generates a reference voltage through a
switch mechanism, for example a switch SW4. The switch SW4 can
freely select one of the power supply VP4 side and the GND side.
Thus, when the switch SW4 selects the GND, the reference voltage
becomes 0 V.
[0149] In addition, the second electrode 301 can be freely
connected to a power supply VP3 that applies a predetermined
negative voltage through a switch mechanism, for example a switch
SW5. In addition, the power supply VP3 can be freely connected to
the power supply VP4 that applies the reference voltage through a
switch mechanism, for example the switch SW4. Likewise, the switch
SW4 can freely select one of the power supply VP4 side and the GND
side. Thus, when the switch SW4 selects the GND, the reference
voltage becomes 0 V.
[0150] In the foregoing description, the power supply VP1 applies a
predetermined negative voltage; the power supply VP2 applies a
predetermined positive voltage; and the power supply VP3 applies a
predetermined negative voltage. In contrast, the power supply VP1
may apply a predetermined positive voltage; the power supply VP2
may apply a predetermined negative voltage; and the power supply
VP3 may apply a predetermined positive voltage. In the drawing, the
power supply VP4 applies a negative reference voltage. Instead, the
power supply VP4 may apply a positive reference voltage. When
necessary, the polarities of the voltages applied may be
changed.
[0151] Thus, the contact position that the conductive needle 303
contacts on the rear surface of the semiconductor wafer W is closer
to the center of the semiconductor wafer W than the contact
position that the conductive needle 305 contacts on the process
surface of the semiconductor wafer W.
[0152] Although the conductive needles are used to remove electrons
stored on the semiconductor wafer W or potential of the static
electricity chuck mechanism, since the resist film of the
semiconductor wafer W is exposed by irradiating it with an electron
beam, the distance of the conductive needle 305, which contacts on
the process surface from the center of the semiconductor wafer W,
is limited. In addition, the conductive needle 305 contact the
process surface of the semiconductor wafer W above the insulative
member 299. In other words, when the contact position of the
conductive needle 305 contacts the process surface of the
semiconductor wafer W apart from the insulative member 299, the
pressing force of the conductive needle 305 causes the
semiconductor wafer W to deviate from the insulative member 299 or
fly.
[0153] Next, with reference to FIG. 15, the structure of the
electron beam irradiating apparatus 500 of the exposure processing
chamber 4 will be described in detail.
[0154] FIG. 15 is a conceptual diagram showing a basic structure of
the electron beam irradiating apparatus 500.
[0155] As shown in FIG. 15, the electron beam irradiating apparatus
500 has the electron gun 501 and the column 100. The electron gun
501 irradiates a semiconductor wafer W with an electron beam
502.
[0156] The column 100 is divided into four blocks of a gun lens
(GL) block 560, a condenser lens (CL) block 561, a projection lens
(PL) block 562, and a reduce lens/object lens (RL/OL) block 563.
The PL block 562 is disposed between a first forming aperture
S1-AP553 and a second forming aperture S2-AP555. The first forming
aperture S1-AP553, the second forming aperture S2-AP 555, and the
air vent lines 106 satisfy the condition of which the number of air
vent lines 106 disposed between the electron gun 501 and the first
forming aperture S1-AP 553 is larger than the number of air vent
lines 106 disposed between the first forming aperture S1-AP 553 and
the second forming aperture S2-AP 555 and/or the interval of the
air vent lines 106 disposed between the electron gun 501 and the
first forming aperture S1-AP 553 is smaller than the interval of
the air vent lines 106 disposed between the first forming aperture
S1-AP 553 and the second forming aperture S2-AP 555.
[0157] The GL block 560 is an area in which the electron beam 502
emitted from the electron gun 501 is focused. The GL block 560
includes a gun lens 511, a first adjustment static electricity
deflecting device (AL1)521 and a gun lens aperture (GL-AP)551. The
electron beam 502 is focused by the GL 511. The first adjustment
static electricity deflecting device (AL1) 521 adjusts the position
of the electron beam 502 at the center of the column 100. The GL-AP
551 cuts the largest current portion from the electron beam
502.
[0158] The CL block 561 is an area in which the first forming
aperture S1-AP 553 is irradiated with the electron beam. The CL
block 561 includes a second adjustment static electricity
deflecting device (AL2) 522, a condenser lens aperture (CL-AP) 552,
a CL 512, and a third adjustment static electricity deflecting
device (AL3) 523.
[0159] The electron beam 502 that passed through the GL block 560
is adjusted by the AL2 522 such that the electron beam 502 passes
through the center of the CL 512. The electron beam 502 is adjusted
by the CL-AP 552 and the CL 512 such that the number of electrons
of the electron beam 502 becomes a desired value, namely desired
brightness is obtained. The third adjustment static electricity
deflecting device (AL3) irradiates the first forming aperture
(S1-AP) 553 with the electron beam 502.
[0160] The S1-AP553 forms the electron beam 502 in a desired shape.
The electron beam 502 that passed through the CL block 561 is
formed in a desired shape by the S1-AP553. A plurality of static
electricity deflecting devices disposed between the electron gun
501 and the first forming aperture S1-AP 553 (first area), for
example the static electricity deflecting devices 521, 522, and 523
have different thicknesses (widths) as shown in FIG. 15. In this
embodiment, the thicknesses of the static electricity deflecting
devices increase in the direction from the electron gun 501 to the
semiconductor wafer W, or in the traveling direction of the
electron beam emitted from the electron gun 501 such that the
electron beam is properly controlled.
[0161] The PL block 562 is an area in which an image of the S1-AP
553 is focused on the second forming aperture S2-AP 555. The PL
block 562 includes a first blanking static electricity deflecting
device (BLK1) 531, a fourth adjustment static electricity
deflecting device (AL4) 524, a blanking aperture (BLK-AP) 554, a
fifth adjustment static electricity deflecting device (AL5) 525, a
second blanking static electricity deflecting device (BLK2) 532, a
sixth adjustment static electricity deflecting device (AL6) 526, a
PL 513, and a first character projection (CP) static electricity
deflecting device (CP1)541. A plurality of static electricity
deflecting devices disposed between the first forming aperture
S1-AP 553 and the BLK-AP 554 (second area), for example the static
electricity deflecting devices 531 and 524 have different
thicknesses (widths) as shown in FIG. 15. In this embodiment, the
thicknesses of the static electricity deflecting devices decrease
in the direction from the electron gun 501 to the semiconductor
wafer W, or in the traveling direction of the electron beam emitted
from the electron gun 501 such that the electron beam is properly
controlled.
[0162] The electron beam 502 that passed through the S1-AP 553 is
deflected by the blanking static electricity deflecting device 531
such that an unnecessary portion of the semiconductor wafer W is
not exposed. The electron beam 502 is adjusted by the fourth
adjustment static electricity deflecting device (AL4) 524 such that
the electron beam 502 passes through the BLK-AP 554 and the
electron beam is deflected on the BLK-AP 554. Thereafter, the
electron beam is cut such that it dose not reach an unnecessary
portion on the semiconductor wafer W.
[0163] The electron beam 502 that passed through the BLK-AP 554 is
adjusted by the fifth adjustment static electricity deflecting
device (AL5) 525 and the sixth adjustment static electricity
deflecting device (AL6) 526 such that the electron beam 502 passes
through the center of the PL. The PL 513 focuses an image of the
S1-AP 553 on the second forming aperture S2-AP 555. The electron
beam 502 is selected as any character or an electron beam having
any size on the S2-AP 555 by the first CP static electricity
deflecting device (CP1) 541. A plurality of static electricity
deflecting devices disposed between the BLK-AP 554 and the second
forming aperture S2-AP 555 (third area), for example the static
electricity deflecting devices 525 and 526 have the same thickness
(width) as shown in FIG. 15. In this embodiment, the static
electricity deflecting devices are structured in the direction from
the electron gun 501 to the semiconductor wafer W, or in the
traveling direction of the electron beam emitted from the electron
gun 501 such that the electron beam is properly controlled. Taking
account of another static electricity deflecting device, for
example the first CP static electricity deflecting device 541, the
thickness of the first CP static electricity deflecting device 541
is larger than the thickness of each of the static electricity
deflecting devices 525 and 526 such that the electron beam is
properly controlled. Since the static electricity deflecting
devices 525 and 526 having the same thickness are used and the
static electricity deflecting device 541 whose thickness is larger
than the thickness of each of the static electricity deflecting
devices 525 and 526 is also used in combination, the electron beam
can be properly controlled.
[0164] The second forming aperture S2-AP 555 is an aperture that
forms the electron beam in any character and in any size. The
electron beam 502 that passed through the PL block 562 is formed in
any shape by the S2-AP 555.
[0165] The RL/OL block 563 is a region in which an image of the
S2-AP 555 is focused on the semiconductor wafer W. The RL/OL block
563 includes a second CP static electricity deflecting device (CP2)
542, an RL 514, and an OL 571. The electron beam 502 that passed
through the second forming aperture S2-AP 555 is adjusted by the
second CP static electricity deflecting device (CP2) 542 such that
the electron beam 502 passes through the center of the RL. The
electron beam 502 is transferred on the semiconductor wafer W by
the RL 514. As shown in FIG. 15, the thickness (width) of the
second CP static electricity deflecting device 542 is nearly the
same as or larger than the thickness (width) of the first CP static
electricity deflecting device 541 such that the electron beam is
properly controlled. As will be described later, the thickness
(width) of the second CP static electricity deflecting device 542
is larger than that of the other static electricity deflecting
devices except for the first CP static electricity deflecting
device 541 such that the electron beam is properly controlled. The
thicknesses of the static electricity deflecting devices are not
limited to the foregoing example. Instead, the thicknesses of the
static electricity deflecting devices can be properly selected such
that the electron beam is properly controlled when necessary.
[0166] The number of deflecting electrodes of each of the
adjustment static electricity deflecting devices 521 to 526 is
plural, for example four. The number of deflecting electrodes of
each of the blanking static electricity deflecting devices 531 and
532 is plurality, for example two. The number of deflecting
electrodes of each of the CP static electricity deflecting devices
541 and 542 is plurality, for example eight. Thus, the column 100
has a plurality of static electricity deflecting devices whose
numbers of deflecting electrodes are different. Static electricity
deflecting devices whose numbers of deflecting electrodes are large
are disposed on the semiconductor wafer W side, whereas static
electricity deflecting devices whose numbers of deflecting
electrodes are small are disposed on the electron gun 501 side. In
addition, the blanking static electricity deflecting devices 531
and 532 having two deflecting electrodes are disposed between the
adjustment static electricity deflecting devices 521 to 526 having
four deflecting electrodes. When the electron beam is deflected by
a static electricity deflecting device, the distortion of the
electron beam is reversely proportional to the number of deflecting
electrodes. However, when the number of deflecting electrodes of a
static electricity deflecting device is large, it becomes difficult
to form the deflecting electrodes of the static electricity
deflecting device.
[0167] Thus, according to this embodiment, the number of deflecting
electrodes of the static electricity deflecting devices, disposed
in the semiconductor wafer W area, where distortion of deflection
of the electron beam largely affects exposure accuracy, is plural,
for example eight. The number of deflecting electrodes of the CL
axis and PL axis adjustment static electricity deflecting devices,
where distortion of deflection of the electron beam does not
largely affect exposure accuracy, is plural, for example four. The
number of deflecting electrodes of the static electricity
deflecting devices that have an unnecessary electron beam shut-out
function is plural, for example two. Thus, the manufacturing cost
can be reduced. With respect to the number of deflecting electrodes
of the static electricity deflecting devices, in the direction from
the electron gun 501 to the semiconductor wafer W, or in the
traveling direction of the electron beam of the electron gun 501,
there are an area of at least one type of a static electricity
deflecting device having a two's multiple or an even multiple of
deflecting electrodes, for example 2.times.2=4 deflecting
electrode, for example an area from the electron gun 501 to the
first forming aperture S1-AP 553, an area of a plurality of types
of static electricity deflecting devices having a two's multiple of
deflecting electrodes, for example 2.times.1=2 deflecting
electrodes and 2.times.2=4 deflecting electrodes, for example an
area from the first forming aperture S1-AP 553 to the BLK-AP 554,
namely a combination of static electricity deflecting devices
having a two's integer multiple of deflecting electrodes or an even
multiple of deflecting electrodes, for example 2.times.1=2
deflecting electrodes and 2.times.2=4 deflecting electrodes, an
area of a plurality of, for example three or more types of static
electricity deflecting devices having 2.times.4 deflecting
electrodes, for example an area from the first forming aperture
S1-AP 553 to the S2-AP 555, and an area of at least one type of a
static electricity deflecting device having a two's integer
multiple of deflecting electrodes or an even multiple of deflecting
electrodes, for example 2.times.4=8 deflecting electrodes, for
example an area from the S2-AP 555 to the semiconductor wafer W
(fourth area). Instead, of course, at least one of the static
electricity deflecting devices may have a two's odd multiple of
deflecting electrodes rather than two's even multiple of deflecting
electrodes, for example six deflecting electrodes or 10 deflecting
electrodes. Instead, a static electricity deflecting devices having
a two's odd multiple of deflecting electrodes, for example six
deflecting electrodes or 10 deflecting electrodes may be used in
combination. Instead, at least one of the static electricity
deflecting devices may have a three's even multiple, a three's
integer multiple, or a three's odd multiple of deflecting
electrodes rather than a two's even multiple of deflecting
electrodes. Instead, a static electricity deflecting device having
a three's even multiple, a three's integer multiple, or a three's
odd multiple of deflecting electrodes may be used in
combination.
[0168] The CP static electricity deflecting devices 541 and 542 are
longer than other static electricity deflecting devices. In other
words, the static electricity deflecting devices are composed of
cylindrical members. The axial length of each of the CP static
electricity deflecting devices 541 and 542 is larger than that of
each of other static electricity deflecting devices. When the
length of a static electricity deflecting device is large, the
deflection amount of the electron beam can be increased at low
voltage. Thus, the length of each of the static electricity
deflecting devices on the semiconductor wafer W side is larger than
that of each of other static electricity deflecting devices such
that the electron beam is emitted to a desired position on the
semiconductor wafer W.
[0169] In this embodiment, there are two blanking static
electricity deflecting devices that sandwich the BLK-AP 554.
However, when a blanking static electricity deflecting device is
disposed between the BLK-AP 554 and the electron gun 501, the
electron beam can be cut. As in this embodiment, when the second
blanking static electricity deflecting device (BLK2) 532 is also
disposed between the BLK-AP 554 and the semiconductor wafer W, the
amount of leakage of the electron beam that is cut can be
decreased. As described above, although the first blanking static
electricity deflecting device (BLK1) 531 and the second blanking
static electricity deflecting device BLK2 532 have two deflecting
electrodes each, these deflecting electrodes match when these
static electricity deflecting devices are viewed from the top. With
respect to the positions of the static electricity deflecting
devices corresponding to a electron beam passing portion 609, which
will be described later, the center position of each of the
deflecting electrodes matches the passing line of the electron beam
such that the electron beam passes from the electron gun 501 to the
semiconductor wafer W or in the traveling direction of the electron
beam from the electron gun 501. In addition, a space portion 608 of
each deflecting electrode of each static electricity deflecting
device is formed such that the space portion 608 matches the
passing line of the electron beam.
[0170] The diameter of the electron beam passing portion of each of
the static electricity deflecting devices except for the second
blanking static electricity deflecting device BLK2 532 is nearly
the same. In contrast, the diameter of the electron beam passing
portion of the electron beam passing portion of the second blanking
static electricity deflecting device BLK2 532 is larger than that
of each of the static electricity deflecting devices. In other
words, with the second blanking static electricity deflecting
device BLK2 532, deflecting sensitivity is adjusted such that the
two blanking static electricity deflecting devices operate as a
diaphragm of the electron beam.
[0171] A voltage of -100 V to 100 V is designed to be able to be
applied to the adjustment static electricity deflecting devices 521
to 526. A voltage of for example -20 V to 20 V, which is lower in
an amplitude control width than the voltage applied to the
adjustment static electricity deflecting devices 521 to 526, is
designed to be able to be applied to the blanking static
electricity deflecting devices 531 and 532. A voltage of for
example -40 V to 40 V, which is lower in an amplitude control width
than the voltage applied to the adjustment static electricity
deflecting devices 521 to 526, and larger in an amplitude control
width than the voltage applied to the blanking static electricity
deflecting devices 531 and 532, is designed to be able to be
applied to the CP static electricity deflecting devices 541 and
542. These static electricity deflecting devices are electrically
independent from each other. They can be independently controlled.
Two voltages with the same potential and different polarities, for
example, -40 V and +40 V, can be applied to opposite
electrodes.
[0172] The static electricity deflecting devices each have a
temperature adjustment mechanism (not shown) such that they can be
set at a predetermined temperature. The temperature adjustment
mechanism allows an unnecessary matter to be prevented from
adhering on each of the static electricity deflecting devices.
[0173] As shown in FIG. 15, the lenses, which are the GL 511, the
CL 512, the PL 513, and the RL 514, are formed such that their
thicknesses are reversely proportional to the distances from the
semiconductor wafer W. A predetermined voltage, for example -4200 V
to -4900 V, is designed to be able to be applied to the GL 511. A
predetermined voltage, for example -2800 V, is designed to be able
to be applied to the PL 513. A predetermined voltage, for example
-2800 V, is applied to the PL 513. A predetermined voltage, for
example -4300 V, is designed to be able to be applied to the RL
514. A predetermined voltage, for example -4300 V, is designed to
be able to be applied to the RL 514.
[0174] Next, with reference to FIG. 16 to FIG. 19, an example of
the structure of the foregoing static electricity deflecting
devices will be described. In this example, a static electricity
deflecting device having four deflecting electrodes used as an
adjustment static electricity deflecting device will be described.
The structure of a static electricity deflecting device having four
deflecting electrodes is basically the same as the structure of a
static electricity deflecting device having two deflecting
electrodes or eight deflecting electrodes except that their numbers
of deflecting electrodes are different. In the drawings, for easy
understanding, their scales are different.
[0175] FIG. 16 is a perspective view showing an outline of a static
electricity deflecting device of the column 100 of the electron
beam irradiating apparatus shown in FIG. 16. FIG. 17 is a top view
showing the static electricity deflecting device shown in FIG. 16.
FIG. 18 is a perspective view showing an outline of the static
electricity deflecting device shown in FIG. 16, taken in the axial
direction. FIG. 19 is a partial plan view showing the static
electricity deflecting device shown in FIG. 16.
[0176] As shown in FIG. 16 and FIG. 17, the adjustment static
electricity deflecting device 521 (522 to 526) includes a
cylindrical member 612, which has the electron beam passing portion
609; four deflecting electrodes 603 disposed radially along the
cylindrical axis on the inner wall surface of the cylindrical
member 612 and electrically divide; four space portions 608 each of
which is connected to a gap portion 611 between the two
corresponding deflecting electrodes 603 and is disposed at an outer
position of the corresponding gap portion 611 than the electron
beam passing portion 609 when each of the space portions 608 are
viewed from the electron beam passing portion 609; four connection
portions 607 each of which connects the corresponding gap portion
611 and the corresponding space portion 608; four first conduction
films 602 each of which is formed along the cylindrical axis on the
wall surface of the corresponding space portion 608; four
connection conductive films 703 each of which has a nearly
ring-shaped section and which electrically connects the
corresponding first conductive film 602; and four voltage input
terminals 605 each of which applies a voltage to the corresponding
deflecting electrode 603. Formed on the wall surface of each of the
connection portions 607 is a second conductive film 610 that is
electrically connected to the corresponding deflecting electrode
603. The second conductive film 610 is formed from the
corresponding gap portion 611 to the corresponding space portion
608. The second conductive film 610 may protrude into the space
portion 608 to some extent as long as the second conductive film
610 does not contact the first conductive film 602.
[0177] The cylindrical member 612 is composed of three layers of an
inner layer 606, a middle layer 604, and an outer layer 601, each
of which is composed of the same material, ceramic. The deflecting
electrodes 603 and the second conductive films 610 that are
electrically connected are insulated from the first conductive
films 602 and the connection conductive films 703 that are
electrically connected. In this embodiment, the deflecting
electrodes 603 and the second conductive films 610 are insulated
from the first conductive films 602 and the connection conductive
films 703 by the middle layer 604 as an insulative area. In the
space portions 608 formed in the middle layer 604, ceramic is
exposed. In other words, the wall surface of each of the space
portions 608 is composed of a conductive area on which the
corresponding first conductive film 602 is formed and an insulative
area in which ceramic is exposed. The connection conductive films
703 provide a shield effect that prevents the static electricity
deflecting device 521 from being affected by an external electric
field.
[0178] The deflecting electrodes 603 and the second conductive
films 610 are formed on inner wall surfaces and divided surfaces of
four divided portions of the inner layer 606, respectively. The
deflecting electrode 603 and the second conductive film 610 formed
on one of the four divided portions of the inner layer 606 are
electrically insulated from another four divided portions. The
connection portions 607 each have a first connection portion 607a
connected to the electron beam passing portion 609 and a second
connection portion 607b connected to the corresponding space
portion 608 that is wider than the first connection portion 607a.
Although the deflecting electrodes 603 and the second conductive
films 610 are formed on the inner wall surfaces and the divided
surfaces of the four axially-divided portions of the cylindrical
inner layer 606, when necessary, a conductive film may not be
formed on the surface (upper surface and/or the lower surface) of
the outer layer 601. Instead, a conductive film electrically
connected to the connection conductive film 703 and/or the first
conductive film 602 may be formed on the surface (upper surface
and/or the lower surface) of the outer layer 601.
[0179] Thus, when the width of each of the connection portions 607
on the electron beam passing portion 609 side (namely, each of the
first connection portions 607a) is decreased, the amount of the
electron beam that enters into the space portions 608 can be
decreased. On the other hand, when the width of each of the second
connection portions 607 on the space portion 608 side (namely, each
of the second connection portions 607b) is increased, the exposed
area of ceramic of the middle layer 604 on which the first
conductive films is not formed in the space portions 608 can be
decreased. In addition, since the second conductive film 610 is
formed in each of the connection portions 607, electrons that enter
into the corresponding connection portion 607 pass between two
second conductive films 610. Thus, a potential between the two
second conductive films 610 further prevents electrons from
entering into the corresponding space portion 608.
[0180] The space portions 608 are wider than the connection
portions 607. The space portions 608 have a nearly circular
section. The first conductive films 602 are electrically insulated
from the second conductive films 610. The first conductive films
602 are formed at least in an area that is visible when each of the
space portions 608 is viewed from the electron beam passing portion
609. Although the space portions 608 have a circular section in
this example, the space portions 608 may have a square section, an
elliptic section or a section combination thereof. The volume,
diameter, or distance of each of the space portions 608 need to be
designed such that no abnormal discharge takes place. It is
preferred that the volume that substantially forms each of the
space portions 608 be larger than the volume of each of the
connection portions 607, which will be described later. More
specifically, in each of the connection portions 607 and the space
portions 608, the volume that substantially forms the first
connection portion 607a of the connection portion 607, the volume
that substantially forms the second connection portion 607b, and
the volume that substantially forms the space portion 608 satisfies
the condition of the volume that substantially forms the first
connection portion 607a<the volume that substantially forms the
second connection portion 607b<the volume that substantially
forms the space portion 608. When the first connection portion 607a
of the connection portion 607 is a substantial connection portion,
if the second connection portion 607b is processed as the first
space portion, the space portion 608 can be processed as a second
space portion. When each of the space portions 608 has a square
section, it is preferred that the first conductive film 602 be
formed in an area that is visible when each of the space portions
608 is viewed from the electron beam passing portion 609.
[0181] The connection conductive films 703 formed between the outer
layer 601 and the middle layer 604 are electrically connected to
the four first conductive films 602. Thus, when any one position of
the connection conductive films 703 and the first conductive films
602 is grounded, all the first conductive films 602 can be
collectively grounded. As a result, the structure of the static
electricity deflecting device 521 (522 to 526) can be
simplified.
[0182] In addition, the space portion 608 can be used as air vent
openings through which the degree of vacuum of the electron beam
passing portion 609 is increased. In addition, the space portions
608 can be also used as gas vent openings when the exposure
processing chamber 4 is cleaned. Moreover, for safety reason, it is
necessary to provide the space portions 608 with abnormal discharge
detection mechanisms that detect abnormal discharge therein. In
addition, as described above, the space portions 608 may be
provided with temperature adjustment mechanisms, for example
heaters, which keep the space portions 608 at a predetermined
temperature to suppress depositing of unnecessary matter.
[0183] In the static electricity deflecting device 521 (522 to 526)
of this embodiment, the space portions 608 are formed such that
they are connected to the electron beam passing portion 609 through
the corresponding gap portions 611 formed between adjacent
deflecting electrodes 603. In addition, the first conductive films
602 are formed in the space portions 608. Thus, electrons that
entered from the electron beam passing portion 609 into the space
portions 608 do not easily return to the electron beam passing
portion 609. Thus, the space portions 608 function as electron
capturing areas. Electrons that passed through each of the gap
portions 611 and that are stored in the corresponding space portion
608 are quickly discharged by the corresponding first conductive
film 602. Thus, since occurrence of charge-up can be suppressed, an
electron beam can be deflected in a desired shape. As a result,
deterioration of the exposure accuracy due to charge-up can be
prevented.
[0184] As described above, it is preferred that each of the first
conductive films 602 be formed at least in an area that is visible
when each of the space portion 608 is viewed from the electron beam
passing portion 609. Electrons that passed through the gap portion
611 and entered into the space portion 608 are nearly securely
captured by the first conductive film 602.
[0185] When electrons pass through each of the connection portions
607 and reached the corresponding space portion 608, the traveling
direction of the electrons is restricted. Thus, when the first
conductive film 602 is formed at least in an area that is visible
when each of the space portion 608 is viewed from the electron beam
passing portion 609, the electrons can be nearly securely captured
by the first conductive film 602.
[0186] To electrically insulate each of the space portion 608 and
the corresponding deflecting electrode 603, there is an area in
which ceramic of the middle layer 604 is exposed in the space
portion 608. As the material of the outer layer 601, the middle
layer 604, and the inner layer 606 of the cylindrical member 612,
it is preferred to use a material that satisfies the conditions of
which the CR value (C represents capacitance, whereas R represents
resistance) of the scanning frequency of the electron beam is equal
to or smaller than 100 .mu.m, the capacitance C is equal to or
smaller than 100 pF, and the resistance R is 10.sup.6 to 10.sup.7
ohms. When the capacitance C is 100 pF, even if charge-up occurs in
the area in which ceramic is exposed, the electrons tend to be
easily discharged before next electrons enter. Thus, charge-up can
be suppressed to some extent.
[0187] In this embodiment, since the space portions 608 have a
curved section, electrons that entered into the space portions 608
do not easily return to the electron beam passing portion 609
although the electrons collide and bounce.
[0188] In addition, in this embodiment, since each of the space
portions 608 is designed to be larger than the widths of the
corresponding gap portion 611 and the corresponding connection
portion 607, electrons that entered into each of the space portions
608 do not easily return to the electron beam passing portion 609.
Thus, the electrons do not adversely affect an electron beam that
passes through the electron beam passing portion 609.
[0189] In this embodiment, each of the connection portions 607 has
the first connection portion 607a and the second connection portion
607b, which differ in their widths. Thus, in each of the space
portions 608, an area in which ceramic is exposed in the middle
layer 604, namely an area not coated with the first conductive film
602, can be decreased. As a result, charge-up can be
suppressed.
[0190] In this embodiment, the first conductive films 602 and the
connection conductive films 703, which are electrically connected,
are grounded. Instead, when a plus potential is applied to the
first conductive films 602, electrons can be securely captured.
[0191] In the exposure processing chamber 4, the first conductive
films 602 of each of the static electricity deflecting devices of
the column 100 are grounded and the semiconductor wafer W is also
grounded. Thus, no potential occurs between the semiconductor wafer
W and each of the static electricity deflecting devices. As a
result, no electric charges are stored on the semiconductor wafer
W. Instead, the static electricity deflecting devices may be
designed such that the potential of each of the first conductive
films 602 becomes the same as that of the semiconductor wafer W. In
this case, no potential occurs between the semiconductor wafer W
and each of the static electricity deflecting devices. As a result,
no electric charges are stored on the semiconductor wafer W.
[0192] As the material of the cylindrical member 612, a
non-conductive material for example alumina, ceramic, or conductive
ceramic whose volume resistivity is 10.sup.7 to 10.sup.10 ohmcm can
be used. When a non-conductive material whose volume resistivity is
10.sup.7 to 10.sup.10 ohmcm is used as the material of the
cylindrical member 612, even if the cylindrical member 612 is
charged with static electricity, the cylindrical member 612 is
easily discharged. In addition, the cylindrical member 612
insulates the deflecting electrodes from the ground (GND). In this
embodiment, as the cylindrical member 612, conductive ceramic is
used. Instead, insulative ceramic may be used. When insulative
ceramic is used, its volume resistivity may be 10.sup..infin.ohmcm.
Instead, the cylindrical member 612 may be composed such that the
specific resistance of ceramic of the middle layer 604 is higher
than that of the outer layer 601 and/or the inner layer 606, for
example the specific resistance of ceramic of the middle layer 604
is on the order of 10.sup.7 ohmcm or higher and the specific
resistance of ceramic of the outer layer 601 and/or the inner layer
606 is on the order of 10.sup.7 ohmcm or lower. Instead, the
cylindrical member 612 may be composed such that the specific
resistance of ceramic of the middle layer 604 is higher than that
of the outer layer 601 and/or the inner layer 606 and the specific
resistance of the outer layer 601 is lower or higher than that of
the inner layer 606.
[0193] In addition, as was described above, it is preferred to use
a material that satisfies the conditions of which the CR value (C
represents capacitance, whereas R represents resistance) of the
scanning frequency of the electron beam is equal to or smaller than
100 .mu.m, the capacitance C is equal to or smaller than 100 pF,
and the resistance R is 10.sup.6 to 10.sup.7 ohms. The deflecting
electrode 603 is composed of a platinum group metal such as
ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium
(Ir), or platinum or a conductive oxide such as ruthenium oxide,
iridium oxide, or platinum oxide.
[0194] When the interior of the exposure processing chamber 4 is
cleaned, a strong oxidizing agent is used. Thus, it is preferred
that the deflecting electrodes 603 be composed of a material that
is not easily oxidized. The first conductive films 602, the
connection conductive films 703, and the second conductive films
610 may be composed of the same material as the deflecting
electrodes 603 or different materials therefrom. Like the material
of the deflecting electrodes 603, the material of the first
conductive films 602, the connection conductive films 703, and the
second conductive films 610 may be a platinum group metal such as
ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium
(Ir), or platinum or a conductive oxide such as ruthenium oxide,
iridium oxide, or platinum oxide. As the first conductive films
602, the deflecting electrodes 603, the connection conductive films
703, and the second conductive films 610, gold-plated metal films
may be used. In this embodiment, the deflecting electrodes 603, the
first conductive films 602, the connection conductive films 703,
and the second conductive films 610 are made of the same material,
gold. As a conductive oxide, a conductive metal oxide such as
vanadium dioxide (VO.sub.2), chromium dioxide (CrO.sub.2),
molybdenum dioxide (MoO.sub.2), tungsten dioxide (WO.sub.2),
rhenium dioxide (ReO.sub.2), niobium dioxide (NbO.sub.2), ruthenium
dioxide (RuO.sub.2), rhodium dioxide (RhO.sub.2), iridium dioxide
(IrO.sub.2), palladium dioxide (PdO.sub.2), platinum dioxide
(PtO.sub.2), or osmium dioxide (OsO.sub.2) or a conductive complex
oxide such as lanthanum nickel complex oxide (LaNiO.sub.3),
strontium vanadic acid (SrVO.sub.3), calcium vanadic acid
(SrVO.sub.3), calcium vanadic acid (CaVO.sub.3), strontium ferrate
(SrFeO.sub.3), lanthanum titanic acid (LaTiO.sub.3), lanthanum
strontium nickel complex oxide (LaSrNiO.sub.4), strontium chromate
(SrCrO.sub.3), calcium chromate (CaCrO.sub.3), calcium ruthenate
(CaRuO.sub.3), strontium ruthenate (SrRuO.sub.3), or strontium
iridate (SrIrO.sub.3). It is preferred that these conductive films
be formed by electrolytic plating method or spattering method.
[0195] In FIG. 19, width a of the gap portions 611 is a
predetermined width, for example a predetermined value of 1 mm or
less, for example around 0.5 mm. Length b of the connection portion
607 is a predetermined length, for example a predetermined value of
50 mm or less, for example around 1.5 mm to 25 mm. In this
embodiment, the gap portion 611 and the connection portion 607 are
designed to satisfy the relationship of which width a and length b
are 1:10. When the diameter of the electron beam passing portion
609 and the diameter of the cylindrical member 612 are the same,
electrons can be prevented from entering into the space portion 608
as length b increases. As a result, an electron beam that passes
through the electron passing portion can be prevented from being
affected by static electricity charged up in the space portion
608.
[0196] However, length b is reversely proportional to diameter d of
the space portion 608. Thus, to secure a sufficient electron
capturing area and decrease the area in which ceramic is exposed in
the space portion 608 as much as possible, it is preferred that the
ratio of width a and length b be a predetermined value, for example
1:1 or larger, for example 1:3 to 1:10.
[0197] In addition, in this embodiment, since the second connection
portion 607b is wider than the first connection portion 607a, the
area in which ceramic is exposed in the space portion 608 can be
decreased in comparison with the case that the width of the
connection portion 607 is the same as the width of the first
connection portion 607a, namely the gap portion 611.
[0198] In this embodiment, the thickness of the first conductive
film 602 is a predetermined thickness, for example a predetermined
thickness of 0.5 .mu.m to 5 .mu.m, for example around 2 to 3 .mu.m.
Diameter d of the space portion 608 is a predetermined diameter,
for example a predetermined diameter of 10 mm or less, for example
around 2 to 3 mm. The thickness of the outer layer 601 is a
predetermined thickness, for example a predetermined thickness of
10 mm or less, for example around 1 to 5 mm. The thickness of the
middle layer is a predetermined thickness, for example a
predetermined thickness of 5 mm or less, for example around 0.5 to
1 mm. The thickness of the inner layer 606 is a predetermined
thickness, for example a predetermined thickness of 10 mm or less,
for example around 1.5 to 5 mm. The thickness of the deflecting
electrode 603 is a predetermined thickness, for example a
predetermined thickness of 10 .mu.m or less, for example around 2
to 3 .mu.m. The diameter of the electron beam passing portion 609
is a predetermined diameter, for example a predetermined diameter
of 20 mm or less, for example around 4 to 11 mm. These values may
be changed depending on the type of the static electricity
deflecting device. In this embodiment, the relationship of the
thickness of the outer layer 601, the thickness of the middle layer
604, and the thickness of the inner layer 606 satisfies the
condition of the thickness of the inner layer 606.gtoreq.the
thickness of the outer layer 601>the thickness of the middle
layer 604. Instead, the relationship of the thickness of the outer
layer 601.gtoreq.the thickness of the inner layer 606>the
thickness of the middle layer 604 may be satisfied.
[0199] In the column 100 of this embodiment, all the static
electricity deflecting devices have the space portions 608.
Instead, at least static electricity deflecting devices that are
disposed in the vicinity of the semiconductor wafer W and whose
charge-up largely and adversely affects exposure accuracy, for
example CP static electricity deflecting devices in this
embodiment, necessitate the space portions 608.
[0200] The static electricity deflecting devices are not limited to
those of the foregoing embodiment. Instead, they may be modified
and/or changed without departing from the spirit and scope of the
present invention. FIG. 20 is a plan view showing a static
electricity deflecting device 1521 according to a modification of
the foregoing embodiment. For simplicity, in FIG. 20, similar
portions to those of the foregoing embodiment are denoted by
similar reference numerals. In the embodiment, the second
conductive film 610 is formed on the wall surface of each of the
connection portions 607. In contrast, in this modification, a
conductive film may not be formed on the wall surface of the
connection portion 607 such that ceramic of the inner layer 606 is
exposed.
[0201] FIG. 21 is a plan view showing a static electricity
deflecting device 2521 according to another modification of the
foregoing embodiment. Likewise, for simplicity, in FIG. 21, similar
portions to those of the foregoing embodiment are denoted by
similar reference numerals. In the foregoing embodiment, the shape,
width, of the connection portion 607 partially varies. In this
modification, as shown in FIG. 21, the shape, width, of a
connection portion 707 that connects the space portion 608 and the
electron beam passing portion 609 may be formed constant. Thus,
since the width of the connection portion 707 is narrow, it
prevents electrons from entering into the space portion 608. In
addition, the ratio of width a and length b substantially becomes
large.
[0202] FIG. 22 is a plan view showing a static electricity
deflecting device 3521 according to another modification of the
foregoing embodiment. For simplicity, in FIG. 22, similar portions
to those of the foregoing embodiment are denoted by similar
reference numerals. In the foregoing embodiment, the first
conductive films 602 are electrically connected by the connection
conductive film 703. Instead, in this modification, as shown in
FIG. 22, each of the first conductive films 602 may be grounded
without the connection conductive film 703. Ammeters may be
disposed in grounding paths of the first conductive films 602 to
detect the amounts of charge-up of the deflecting electrodes.
Corresponding to the detected results, voltages applied to the
deflecting electrodes may be controlled by a control mechanism. The
outer layer 601 and the inner layer 606 of the upper surface and
the lower surface of the cylindrical member 612 may be gold-plated.
The plated conductive film may be grounded.
[0203] Next, with reference to FIG. 23 and FIG. 24, the structures
of the GL 511, the CL 512, the PL 513, and the RL 514 will be
described. Their structures are basically the same.
[0204] FIG. 23 is a perspective view showing an outline of the lens
511 (512 to 514). FIG. 24 is a sectional view showing an outline of
the state of which the lens 511 (512 to 514) is mounted in the
column 100.
[0205] As shown in FIG. 24, the lens 511 (512 to 514) has a
rail-shaped section. The lens 511 (512 to 514) is supported and
secured by a support member 801. The lens 511 (512 to 514) is made
of titanium or the like. The support member 801 is made of ceramic
or the like. A film made of gold is formed between the lens 511 and
the support member 801. As shown in FIG. 15, the GL 511, the CL
512, the PL 513, and the RL 514 are designed such that the
thicknesses (widths) of the plurality of lenses disposed from the
electron gun 501 to the first forming aperture S1-AP 553, for
example the lenses 511 and 512, are nearly the same. In this
embodiment, in the direction from the electron gun 501 to the
semiconductor wafer W, or in the traveling direction of an electron
beam from the electron gun 501, the thicknesses of the lenses
increase. The thickness (width) of the lens 513 disposed from the
first forming aperture S1-AP 553 to the second forming aperture
S2-AP 555 is smaller than that of each of the lenses 511 and 512.
The thickness (width) of the lens 514 disposed from the second
forming aperture S2-AP 555 to the semiconductor wafer W is smaller
than the thickness (width) of the lens 513. At least, the lenses
that satisfy the foregoing conditions are disposed in these areas.
More preferably, the plurality of lenses disposed from the electron
gun 501 to the first forming aperture S1-AP 553, for example the
lens 511 and 512, are designed to satisfy the condition of the
thickness (width) of the lens 511>the thickness (width) of the
lens 512.apprxeq.the thickness (width) of the lens 513>the
thickness (width) of the lens 514.
[0206] The lens 511 (512 to 514) is made of a conductive material,
for example a nonmagnetic and conductive material, for example
tungsten carbide. In addition, DC voltages are independently
applied to the lenses 511, 512, 513, and 514. The voltages of the
lenses 511 to 514 are set by the control mechanism. The voltage
applied to the lens 511 is a predetermined value of 4.0 to 5.0 kV.
The voltage applied to the lens 512 is a predetermined value of 2.0
to 4.0 kV. The voltage applied to the lens 513 is a predetermined
voltage of 2.5 to 3.5 kV. The voltage applied to the lens 514 is a
predetermined voltage of 3.5 to 4.0 kV. It is preferred that the
relationship of the voltage of the lens 511>the voltage of the
lens 514>the voltage of the lens 512 or the voltage of the lens
513 be satisfied. Since the lens 513 projects the first forming
aperture S1-AP 553 to the second forming aperture S2-AP 555, it is
preferred that the voltage applied to the lens 513 be a
predetermined value of 2.8 to 3.2 kV. The inner diameters of the
lenses 511 to 514 satisfy the condition of the inner diameter of
the lens 513.apprxeq.the inner diameter of the lens 512>the
inner diameter of the lens 514. Members 2010 disposed at an upper
portion and a lower portion of the lens 511 (512 to 514) are made
of a conductive material, for example a nonmagnetic and conductive
material, for example tungsten carbide. The members 2010 are
grounded. When only the lens 512 is provided with an extension
portion 2011 only on the member 2010 side, namely the electron gun
side, the inner diameter of the member 2010 is smaller than the
inner diameter of the lens 512, whereas the inner diameter of the
member 2010 on the semiconductor wafer W side is nearly the same as
the inner diameter of the lens 512. It is preferred that the inner
diameter of the member 2010 be nearly the same as the inner
diameter of each of the other lenses 511, 513, and 514.
[0207] As shown in FIG. 47, a lens 511 according to another
embodiment may be composed of a ring member 511 whose inner
diameter increases in the traveling direction of the electron beam.
In this case, the inner diameter of the grounding member 2010 on
the semiconductor wafer W side is nearly the same as the inner
diameter of the bottom position of the ring member 511. The
grounding member 2010 is not disposed on the electron gun side such
that the distance between the source of the electron beam and the
ring member 511 becomes as short as possible. In this structure,
the efficiency of which the electron beam passes is improved. As
shown in FIG. 48, a lens 511 according to another embodiment may be
composed of a plurality of ring members 2012 whose inner diameters
increase in the traveling direction of the electron beam. The lens
511 may be adequately structured in a combination of the disclosed
technologies.
[0208] With respect to a structure of suppressing the penetration
of magnetism in the exposure processing chamber 4 that emits an
electron beam to a semiconductor wafer W and performs the exposure
process for a semiconductor wafer W, as shown in FIG. 25, the
exposure processing chamber 4, the reduced pressure conveying
chamber 70, and the vacuum preparation chamber 60 are surrounded by
a magnetism penetration suppressing mechanism, for example a
magnetic shield member 121 such as a member made of a material such
as permalloy, magnetic soft iron, magnetic steel iron, Sendust, or
ferrite. In the exposure processing chamber 4, the reduced pressure
conveying chamber 70, and the vacuum preparation chamber 60, an
electron beam is affected by an external magnetism, for example it
is deflected. Thus, the yield of semiconductor wafers W in the
exposure process are affected. Although the whole apparatus may be
surrounded by the magnetic shield member 121, in this case, the
size of the apparatus will increase. Thus, this approach would be
neither practical, nor economical. In addition, since the apparatus
has magnetism generation sources such as a control device and so
forth, it is preferred that the exposure processing chamber 4, the
reduced pressure conveying chamber 70, and the vacuum preparation
chamber 60 be covered by the magnetic shield member 121. Instead,
only the exposure processing chamber 4 may be covered by the
magnetic shield member 121. In this case, magnetism generated by
the reduced pressure conveying chamber 70 and the vacuum
preparation chamber 60 may not be sufficiently protected. Thus, it
is necessary to cover at least the exposure processing chamber 4
and the reduced pressure conveying chamber 70 by the magnetic
shield member 121. It is preferred that the exposure processing
chamber 4, the reduced pressure conveying chamber 70, and the
vacuum preparation chamber 60 be covered by the magnetic shield
member 121.
[0209] Thus, an area 120 that is more than half of the floor area
of the apparatus is covered by the magnetic shield member 121. In
addition, it is preferred that the magnetic shield member 121 have
a thickness and structure that allows the intensity of magnetic
field inside the magnetic shield member 121 is half or less of the
intensity of magnetic field outside the magnetic shield member 121
or the apparatus.
[0210] In addition, as shown in FIG. 26, as an example of magnetism
generation sources, there is a power supply section as an energy
source that generates an electron beam, for example an amplifier
section 130. The amplifier section 130 is disposed opposite to the
reduced pressure conveying chamber 70 of the exposure processing
chamber 4. The height of the bottom position of the amplifier
section 130 is greater than the height h5 of the holding surface of
the semiconductor wafer W on the stage 91. Preferably, the height
of the bottom position of the amplifier section 130 is greater than
the height h6 of the loading openings 89 from which the
semiconductor wafer W is loaded into the exposure processing
chamber 4. More preferably, the height of the bottom position of
the amplifier section 130 is greater than the height of radiation
position h7 of an electron beam emitted from the column 100. This
arrangement prevents an electron beam used for the exposure process
from being adversely affected by electromagnetic waves emitted from
the amplifier section 130.
[0211] A maintenance space section 131 is disposed below the
amplifier section 130. The maintenance space section 131 allows a
worker to maintain the exposure processing chamber 4 and so forth.
Thus, not only influence of electromagnetic waves, but efficiency
of a maintenance work is considered. Since the space of the
apparatus is effectively used, the size of the apparatus is
downsized and the foot print thereof is decreased.
[0212] As shown in FIG. 27, a gas supplying mechanism 140 is
disposed opposite to the atmospheric aligner section 3 of the
exposure processing section 5. The gas supplying mechanism 140
supplies a gas, for example clean air to the whole apparatus. At
least the temperature and humidity of the clean air are controlled.
The gas supplying mechanism 140 also supplies clean air 141 to the
FFU 40 through a gas flow path 142 disposed above the exposure
processing section 5. In addition, the gas supplying mechanism 140
supplies the clean air 141 to the exposure processing section 5
through the gas flow path 142 at a predetermined flow rate so that
a down-flow DF takes place in the exposure processing section 5.
The clean air 141 is collected at lower positions of the exposure
processing section 5 and the atmospheric aligner section 3. The
collected clean air 141 is supplied to the gas supplying mechanism
140 through a gas collection path 143. As a result, a recycling
system is effectively achieved.
[0213] As shown in FIG. 28, the gas flow path 142 is divided into a
plurality of zones Z1, Z2, and Z3. In addition, a plurality of air
flow paths 150 are disposed on both wall sides of the exposure
processing section 5. Each of the air flow paths 150 has a
plurality of vertical zones Z11, Z12, Z13, Z14, and Z15. The zone
Z2 of the gas flow path 142 has an air supplying opening 152 that
is a flow path through which clean air supplied from the gas
supplying mechanism 140 and taken from an air taking opening 151 is
supplied to the exposure processing section 5 and the FFU 40.
[0214] The zone Z1 and the zone Z3 of the gas flow path 142 have an
air supply opening 153 through which clean air is supplied from the
gas supplying mechanism 140 to a flow path of at least one zone,
for example the zone Z11 of the gas flow path 150. The supplied
clean air is taken from a gas taking opening 154 disposed above a
flow path of the zone Z11. The taken clean air forms a down-flow DF
that flows downward as shown in FIG. 28. The down-flow DF is guided
to flow paths of the zones Z12, Z13, Z14, and Z15 from a lower
position of the flow path of the zone Z11. The guided clean air
forms up-flows UPF in the plurality of zones Z12, Z13, Z14, and Z15
as shown in FIG. 28. All the up-flows UPF in the flow paths of the
plurality of zones Z12, Z13, Z14, and Z15 are collected to the gas
flow path 142 through gas collection openings 155. The collected
air is supplied to the gas supplying mechanism 140 through a gas
collection opening 156. As a result, a recycling system is
effectively achieved.
[0215] Thus, a partition plate 157 as a gas separation member is
disposed in the flow paths of the zones Z1 and Z3 so that a gas
supply path of clean air to the zone Z11 and a gas collection path
of clean air from the zones Z12, Z13, Z14, and Z15 are formed.
Disposed in the follow path of the zone Z11 in which a down-flow is
formed is a heat source, for example a control mechanism 166 of the
exposure processing section 5. Disposed in the zone Z15 in which an
up-flow UPF is formed is an operation mechanism of the control
mechanism 166, for example an operation panel 160, whose heat
generation is smaller than the control mechanism 166.
[0216] The magnetic shield prevents magnetism from entering into
the inside of the apparatus. In addition, heat management is
performed outside the magnetic shield. Thus, the whole system can
be prevented from being environmentally affected. In addition, the
system prevents itself from affecting the environment of the
outside. Alternatively, a heat source may be provided to at least
one of the up-flow UPF zones Z12, Z13, Z14, and Z15 and heat caused
by the heat source may be actively collected, heat can be prevented
from staying in the apparatus. As a result, the influence of heat
against the processing chamber may be suppressed. Thus, the yield
of semiconductor wafers W may be preferably improved.
[0217] With respect to the relationship of inner pressures of
individual sections of the apparatus, as shown in FIG. 29, when the
inner pressure of the resist processing device 2 is denoted by P1,
the inner pressure of the atmospheric aligner section 3 is denoted
by P2, the inner pressure of the heat processing section 22 is
denoted by P3 (when heat processing section 22 has an opening and
closing mechanism, it is open), the pressure in the space of the
heat processing section 22 is denoted by P4 (clean air may be
supplied from the gas supplying mechanism 140 or a down-flow may be
formed by clean air supplied from the FFU 40), the inner pressure
of the vacuum preparation chamber 60 is denoted by P5 (when an
opening and closing mechanism 61 is open), the inner pressure of
the exposure processing section 5 is denoted by P6, the inner
pressure of the zones Z11, Z12, Z13, Z14, and Z15 is denoted by P7,
and the inner pressure of the clean room in which the apparatus is
disposed is denoted by P8, the conditions of P6>P2, P1>P2,
P5>P2, P2>P4, P2>P3, and P6.gtoreq.P7 are kept.
[0218] The conditions of P6>P2, P1>P2, and P5>P2 are kept
because clean air is prevented from flowing from the atmospheric
aligner section 3 to the processing chambers of the resist
processing device 2 and the exposure processing section 5. As a
result, the problem of cross contamination of the apparatus can be
solved.
[0219] In addition, when the inner pressure P8 of the clean room is
compared with the conditions of P6>P2, P1>P2, and P5>P2,
the condition of P2>P8 is kept. Thus, air in the clean room is
prevented from adversely affecting the process environment. Next,
the relationship of P2>P4 and P2>3 will be described. As was
described above, vented gas from the heat processing section 22
flows from the temperature adjustment mechanism side to the heat
process mechanism side. These conditions prevent heat from
affecting the conveying mechanism side. In addition, these
conditions prevent particles that take place from a semiconductor
wafer W for the heat process of the heat process mechanism from
leaking into the conveying mechanism side. In addition, since there
are heat generation sources such as a power supply section, a
thermal process control mechanism, and so forth above the heat
processing section, these conditions prevent heat from leaking into
the conveying mechanism side. Of course, when the inner pressures
of the resist processing device 2, and the exposure processing
chamber 4, the atmospheric aligner section 3, and the atmospheric
aligner section 3 are compared with the inner pressure of the clean
room, the conditions of (P2, P4, P3)>P8 are kept. With respect
to the relationship of P4 and P3, it is preferred that the
condition of P3.gtoreq.P4 is kept to prevent heat from affecting
the heat processing section 22.
[0220] In addition, the condition of P6.gtoreq.P7 is kept. This is
because a down-flow is formed in the exposure processing section 5.
However, since the processing chamber and so forth are disposed in
the exposure processing section 5, a part of the down-flow bents
horizontally. Although gas is collected downwardly, since gas is
prevented from being agitated in the apparatus, it is preferred
that the inner pressure of the zone Z15, P7, be lower than the
inner pressure of the exposure processing section 5, P6, and that
gas be collected on the side wall side even if gas leaks. In other
words, even if a worker forgot to mount a panel in place during a
maintenance work and a gap occurred, gas could be collected on the
side wall side. When the inner pressure P6 of the exposure
processing section 5 and the inner pressure P7 of the zones 11 to
15 are compared with the inner pressure P8 of the clean room the
conditions of (P6, P7)>P8 are kept. Thus, air in the clean room
can be prevent from adversely affecting the process
environment.
[0221] With respect to the relationship of P5, P2, and P1, the
conditions of P5.gtoreq.P1>P2 are kept. These conditions prevent
particles from entering into the vacuum preparation chamber 60.
When the inner pressure of the atmospheric aligner section 3 is
compared with the inner pressure P8 of the clean room, the
condition of P2>P8 is kept.
[0222] With respect to the relationship of the inner pressure of
the vacuum preparation chamber 60 (when the opening and closing
mechanism 67 is open) and the inner pressure of the reduced
pressure conveying chamber 70 (when the opening and closing
mechanism 67 is open), the condition of which the inner pressure of
the vacuum preparation chamber 60 be equal to or greater than the
inner pressure of the reduced pressure conveying chamber 70 is
kept. Preferably, the condition of which the inner pressure of the
vacuum preparation chamber 60 be greater than the inner pressure of
the reduced pressure conveying chamber 70 is kept. With respect to
the relationship of the inner pressure of the reduced pressure
conveying chamber 70 (when an opening and closing mechanism 92 is
open) and the inner pressure of the exposure processing chamber 4
(when the opening and closing mechanism 92 is open), the condition
of which the inner pressure of the exposure processing chamber 4 be
equal to or greater than the inner pressure of the reduced pressure
conveying chamber 70 is kept. Preferably, the condition of which
the inner pressure of the exposure processing chamber 4 be greater
than the inner pressure of the reduced pressure conveying chamber
70 is kept. This condition allows particles that take place in the
vacuum preparation chamber 60 to be collected by the reduced
pressure conveying chamber 70 and prevents particles from entering
into the exposure processing chamber 4.
[0223] Thus, in this condition, the yield of substrates under
processing is improved. With respect to the relationship of the
inner pressure of the reduced pressure conveying chamber 70 and the
inner pressure of the vacuum preparation chamber 60, preferably,
the conditions of which the inner pressure of the vacuum
preparation chamber 60 is greater than the inner pressure of the
exposure processing chamber 4, the inner pressure of the exposure
processing chamber 4 is greater than the inner pressure of the
reduced pressure conveying chamber 70 are kept.
[0224] With respect to inner temperatures, the condition of which
the inner temperature of the resist processing device 2 is equal to
or greater than the inner temperature of the atmospheric aligner
section 3 is kept. Preferably, the condition of which the inner
temperature of the resist processing device 2 is greater than the
inner temperature of the atmospheric aligner section 3 is kept. As
described above, the difference between the inner temperature of
the atmospheric aligner section 3 and the inner temperature of the
resist processing device 2 is small, for example from a fraction of
1.degree. C. to 3.degree. C., preferably, from 0.1 to 0.5.degree.
C. This condition prevents the resist film formed on a
semiconductor wafer W from expanding and shrinking and thereby the
accuracy of the exposure process from deteriorating. When a
semiconductor wafer W is conveyed to the load lock (vacuum
preparation chamber 60) with the temperature adjustment plate 27
whose temperature is slightly higher than the temperature of the
upper portion of the stage 91, the decrease of the temperature of
the semiconductor wafer W due to the vacuum venting of the load
lock (vacuum preparation chamber 60) can be offset. In addition,
the conditions of which the inner temperature of the atmospheric
aligner section 3 is equal to the inner temperature of the exposure
processing section 5 and the inner temperature of the exposure
processing section 5 is equal to the inner temperature of the zones
Z11, Z12, Z13, Z14, and Z15 are kept. In this description, the
phrase "equal to" means "nearly" that implies an error within
3.degree. C.
[0225] With respect to the relationship of inner humidities, the
conditions of which the inner humidity of the atmospheric aligner
section 3 is equal to the inner humidity of the exposure processing
section 5, the inner humidity of the exposure processing section 5
is equal to the inner humidity of the zones Z11, Z12, Z13, Z14, and
Z15, and the inner humidity of the zones Z11, Z12, Z13, Z14, and
Z15 is equal to the inner humidity of the vacuum preparation
chamber 60 (when the opening and closing mechanism 61 is open) are
kept. In addition, the condition of which the inner humidity of the
atmospheric aligner section 3 is equal to or greater than the inner
humidity of the vacuum preparation chamber 60 (when the opening and
closing mechanism 61 is open) is kept. Preferably, the condition of
which the inner humidity of the atmospheric aligner section 3 is
greater than the inner humidity of the vacuum preparation chamber
60 (when the opening and closing mechanism 61 is open) is kept.
Thus, of course, the condition of which the inner humidity of the
resist processing device 2 is greater than the inner humidity of
the vacuum preparation chamber 60 (when the opening and closing
mechanism 61 is open) is kept. This is because atmospheric pressure
and reduced pressure take place in the vacuum preparation chamber
60. Thus, if moisture entered into the vacuum preparation chamber
60, the throughput of the pressure reduction would decrease. Thus,
it is necessary to cause an inert gas, for example N.sub.2, to flow
from the vacuum preparation chamber 60 to the atmospheric aligner
section 3.
[0226] With respect to control signals and a control structure, as
shown in FIG. 30, as described above, the control mechanism 166 is
disposed in the exposure processing section 5. In addition, an
operation mechanism 160 is disposed. The operation mechanism 160
has a display mechanism. The control mechanism 166 controls
individual devices of the exposure processing section 5. The
control mechanism 166 sends and receives signals to a management
host computer (block L in FIG. 30) of the plant in which the
apparatus is disposed. The atmospheric aligner section 3 has a
control mechanism 180 that controls individual devices of the
atmospheric aligner section 3. An operation mechanism 181 is
connected to the control mechanism 180. The operation mechanism 181
has a display mechanism. The operation mechanism 181 may be shared
by the operation mechanism 160. When necessary, if the atmospheric
aligner section 3 is manufactured and sold as one independent unit
or maintained, the operation mechanism 181 may be able to be freely
connected to the atmospheric aligner section 3.
[0227] The control mechanism 180 sends and receives signals to and
from the control mechanism 53 that controls the heat processing
section as described above. In addition, the control mechanism 180
sends and receives signals to and from a control mechanism 183 that
controls the conveying mechanism 20 (block M in FIG. 30). In
addition, the control mechanism 180 sends and receives signals to
and from a control mechanism 184 on the resist processing device 2
side through a signal line 185. The control mechanism 184 is
connected to an operation panel 14. The operation panel 14 has a
display mechanism. Signals that are sent and received to and from
the resist processing device 2 are signals that cause a
semiconductor wafer W to be transferred between the conveying
mechanism 20 and the passing portion 10 and the receiving portion
11 of the resist processing device 2 and signals about atmospheric
pressures in the resist processing device 2.
[0228] By sending a signal about the inner atmospheric pressure of
the atmospheric aligner section 3 to the control mechanism 184 of
the resist processing device 2 through the control mechanism 180,
the atmospheric pressure may be checked mutually on the resist
processing device 2 side and the atmospheric aligner section 3
side. The control mechanism 166 may control the atmospheric
pressure of the whole apparatus based on the information. In the
foregoing example, the control mechanism 180 and the control
mechanism 184 were described. Instead, the control mechanism 166
may receive a signal from the control mechanism 184 through a
signal line 186. The control mechanism 166 may send a control
command to the control mechanism 180.
[0229] The control mechanism 166 and the control mechanism 180 send
and receive signals through a signal line 187. Since the control
mechanism 166 manages the whole apparatus, the control mechanism
166 can freely receive signals about the states of individual
functions of the atmospheric aligner section 3 from the control
mechanism 180. One of important signals that the control mechanism
166 sends to the control mechanism 180 is a signal that causes the
control mechanism 180 to control the control mechanism 53 to start
the heat process based on the start time or the end time of the
exposure process for a semiconductor wafer W in the exposure
processing chamber 4.
[0230] Since the state of a resist film formed on a semiconductor
wafer W deteriorates with time, it is one of factors that cause the
yield of semiconductor wafers W to decrease. Thus, the time
management from exposure process to PEB heat process is important.
Since the control mechanism 166 manages the whole exposure device,
the yield of semiconductor wafers W is prevented from
decreasing.
[0231] Since the state of a resist film formed on a semiconductor
wafer W deteriorates with time, the control mechanism 184 on the
resist processing device 2 side informs the control mechanism 180
of the end time of resist coating. In addition, the control
mechanism 184 informs the control mechanism 166 of time information
such as conveying time in the atmospheric aligner section 3. The
control mechanism 166 causes the exposure processing chamber 4 to
perform the exposure process for a semiconductor wafer W based on
conveying times of a semiconductor wafer W and/or change factors of
the state of a resist film formed on a semiconductor wafer W in the
reduced pressure conveying chamber 70, the vacuum preparation
chamber 60, and the exposure processing chamber 4. The control
mechanism 180 manages times such as the start time for PEB heat
process for a semiconductor wafer W that has been exposed based on
change factors of the state of the resist film and the information
received from the control mechanism 166.
[0232] After the PEB heat process has been completed, the control
mechanism 180 sends information about transfer time for the resist
processing device 2 and so forth to the control mechanism 184. The
control mechanism 184 manages times for a semiconductor wafer W,
for example the start time of the development process for a resist
film formed on a semiconductor wafer W. Thus, a plurality of
substrates can be prevented from becoming different in their
processes. As a result, the yield of semiconductor wafers W can be
improved. In the foregoing description, the control mechanism 180
was provided. Instead, of course, the control mechanism 166 may
contain at least a part of the functions of the control mechanism
180. Their information is stored in a storage mechanism, for
example a nonvolatile memory or a CD-R, of each control mechanism
and can be freely displayed on a display mechanism of each
operation mechanism.
[0233] The control mechanism 166 or the control mechanism 180 can
send time information such as the end time of the PEB heat process
in the atmospheric aligner section 3 and/or atmospheric information
about the atmospheric aligner section 3 to the control mechanism
184. The control mechanism 184 can manage the development start
time. As a result, the yield of semiconductor wafers W can be
improved. In addition, the control mechanism 166 or the control
mechanism 180 receives information about the time at which the
resist solution was coated on a semiconductor wafer W, information
about the time at which the heat process was performed after
coating of the resist solution, information about the heat process
and manages the start time for the exposure process.
[0234] Connected to the control mechanism 166 are a pressure
detection mechanism, for example a pressure sensor 190, that
detects the pressure of a predetermined portion of the exposure
processing chamber 5, a pressure detection mechanism, for example a
pressure sensor group 191, that detects pressures of predetermined
portions of the zones Z11, Z12, Z13, Z14, and Z15, and a pressure
detection mechanism, for example a pressure sensor 192, that
detects the pressure of a predetermined portion of the vacuum
preparation chamber 60.
[0235] Connected to the control mechanism 180 are a pressure
detection mechanism, for example a pressure detection sensor 193,
that detects the pressure of a predetermined portion of the
atmospheric aligner section 3, and a chemical detection mechanism
194 that detects a chemical component, for example ammonia or the
like, of a predetermined portion of the atmospheric aligner section
3. Connected to the control mechanism 184 are a pressure detection
mechanism, for example a pressure sensor 195 that detects the
pressure of a predetermined section of the resist processing device
2, and a chemical detection mechanism 196 that detects a chemical
component, for example ammonium, of a predetermined section of the
resist processing device 2.
[0236] Connected to the control mechanism 166 and/or the control
mechanism 184 is a pressure detection mechanism, for example a
pressure sensor 197, that detects the pressure outside the
apparatus, for example the inner pressure of the clean room in
which the apparatus is disposed. In such a manner, the pressure and
so forth of the individual sections can be monitored. Since a
chemical component that is present in the process section of the
resist processing device 2 is one of factors that adversely affect
the process of a semiconductor wafer W, the chemical detection
mechanisms in the resist processing device 2 and the atmospheric
aligner section 3 monitor a chemical component that is present
therein. Thus, a chemical component needs to be monitored not only
in the resist processing device 2, but in the atmospheric aligner
section 3.
[0237] The substrate processing apparatus according to this
embodiment is structured as described above. Next, operations for
processes of a semiconductor wafer W will be described.
[0238] First, the coating device (coater COT) of the resist
processing device 2 coats resist solution on the process surface of
a semiconductor wafer W. Thereafter, a heating process is performed
for the semiconductor wafer W at a predetermined temperature.
Thereafter, the temperature of the semiconductor wafer W is
adjusted to nearly the same temperature as the inner temperature of
the resist processing device 2. Thereafter, the semiconductor wafer
W is conveyed to the alignment mechanism 15. The alignment
mechanism 15 aligns the semiconductor wafer W (this operation is
referred to as the first alignment of the resist processing device
2). Thereafter, the semiconductor wafer W is conveyed to the
passing portion 10 by the conveying mechanism 12. The passing
portion 10 aligns the semiconductor wafer W by physically placing
the semiconductor wafer W in a predetermined position (this
operation is referred to as the second alignment of the resist
processing device 2). After the control mechanism 184 has checked
the presence or absence of a semiconductor wafer W at the passing
portion 10 with a sensor, the control mechanism 184 sends a
"conveyance ready completion" signal to the control mechanism 166
and/or the control mechanism 180.
[0239] When the control mechanism 166 and/or the control mechanism
180 has received the "conveyance ready completion" signal, the
semiconductor wafer W is received from the passing portion 10 by
the conveying mechanism 20. Thereafter, the control mechanism 166
and/or the control mechanism 180 checks the presence or absence of
the semiconductor wafer W with a sensor of the conveying mechanism
20 and then sends a "conveyance completion" signal to the control
mechanism 184. During this operation, the semiconductor wafer W is
conveyed to the alignment mechanism 21 by the conveying mechanism
20. The alignment mechanism 21 aligns the semiconductor wafer W
(this operation is referred to as the alignment of the atmospheric
aligner section 3). During the conveying operation, the temperature
of the semiconductor wafer W is adjusted to nearly the same
temperature as the inner temperature of the resist processing
device 2 or to a lower temperature than the inner temperature of
the resist processing device 2 with the inner temperature of the
atmospheric aligner section 3.
[0240] Thereafter, the semiconductor wafer W is conveyed to the
vacuum preparation chamber 60, which is a substrate loading and
unloading section of the exposure processing section 5, by the
conveying mechanism 20. The vacuum preparation chamber 60 is vented
so that a positive pressure higher than the inner atmospheric
pressure of the atmospheric aligner section 3 becomes a
predetermined reduced pressure (this reduced pressure is the same
as the pressure at which the semiconductor wafer W is transferred
to the reduced pressure conveying chamber 70, which will be
described later. When the inner pressure of the vacuum preparation
chamber 60 is slightly lower than the inner pressure of the reduced
pressure conveying chamber 70, particles can be prevented from
entering into the reduced pressure conveying chamber 70). After the
vacuum preparation chamber 60 has been vented or while it is being
vented, the state of the semiconductor wafer W is detected by a
plurality of CCD cameras 65 (position detection step). Thereafter,
the opening and closing mechanism 67 is opened. Thereafter, the
semiconductor wafer W is conveyed from the vacuum preparation
chamber 60 to the reduced pressure conveying chamber 70 by the
conveying mechanism 72 of the reduced pressure conveying chamber
70. Thereafter, the opening and closing mechanism 67 is closed.
[0241] Thereafter, the vacuum pump 83 is driven so that the inner
pressure of the reduced pressure conveying chamber 70 is nearly the
same as the inner pressure of an exposure processing section 90
(the inner pressure of the reduced pressure conveying chamber 70
may be slightly lower than the inner pressure of the exposure
processing section 90 so as to prevent particles from entering into
the exposure processing section 90). Thereafter, the opening and
closing mechanism 92 is opened. The conveying mechanism 72 adjusts
the angle of approach of the semiconductor wafer W to the exposure
processing section 90 corresponding to position data detected by
the CCD cameras 65. Before or after the semiconductor wafer W is
conveyed, the stage 91 of the exposure processing section 90 is
moved to an expected transfer position at which the semiconductor
wafer W is transferred to the conveying mechanism 72 (this
operation is referred to as the first alignment of the exposure
processing section 5).
[0242] The semiconductor wafer W is placed on a support mechanism
disposed in the stage 91. The support mechanism supports the rear
surface of the semiconductor wafer W. The support mechanism
receives the semiconductor wafer W from the conveying mechanism 72
by raising a plurality of support pins. The support mechanism
places the semiconductor wafer W on an insulation portion 299 of
the static electricity chuck mechanism 110 by lowering the support
pins. While or after the semiconductor wafer W is placed on the
insulation portion 299, the conveying mechanism 72 retreats from
the exposure processing section 90. Thereafter, the opening and
closing mechanism 92 is closed.
[0243] Next, the semiconductor wafer W is placed on the insulation
portion 299 of the static electricity chuck mechanism 110.
Thereafter, the conductive needle 305 is moved and contacted to the
predetermined film on the process surface of the semiconductor
wafer W by the raising and lowering mechanism 306. Thereafter, the
semiconductor wafer W is electrostatically sucked by the static
electricity chuck mechanism 110. Thereafter, the conductive needle
303 is moved and contacted to the predetermined film on the rear
surface of the semiconductor wafer W by the raising and lowering
mechanism 304 as a conveying mechanism. Thereafter, electric
charges on the semiconductor wafer W are discharged such that they
becomes lower than a predetermined value.
[0244] Thereafter, the mark detection mechanism 105 of the exposure
processing section 90 detects an alignment mark on a semiconductor
wafer W held by the static electricity chuck mechanism 110 on the
stage 91. The stage 91 is moved on the X and Y axes corresponding
to the detected data. Finally, the semiconductor wafer W is aligned
(this operation is referred to as the second alignment of the
exposure processing section 5). After this alignment, an exposure
process is performed, namely an electron beam is emitted from the
column 100 to the resist film formed on the semiconductor wafer W
at an acceleration voltage in the range from 1 kV to 60 kV,
preferably in the range from 1 kV to 10 kV, more preferably 5 kV so
that a predetermined pattern is formed on the semiconductor wafer
W. It is preferred that the acceleration voltage of the electron
beam be set so that the electron beam acts on the resist film
formed on the semiconductor wafer W. It is necessary to prevent
electrons of the electron beam emitted to silicon (Si), which is
the base material of the semiconductor wafer W, from diffusing. In
addition, while the semiconductor wafer W is being exposed, the
first conductive film of the space portion of each of the static
electricity deflecting devices in the column 100 is grounded.
[0245] After the exposure process, the stage 91 is moved to the
transfer position of the semiconductor wafer W to the conveying
mechanism 72. First, the voltages applied to the first electrode
300 and the second electrode 301 are turned off. Thereafter, the
switches SW2 and SW5 are turned on. The current value of the leak
current that flows in the conductive needle 303 and/or the
conductive needle 305 is measured. When the current value is out of
the predetermined allowable range, the predetermined voltage is
applied to the conductive needle 303 and/or the conductive needle
305 at least one time or the error process is performed. When the
determined result indicates that the current value of the leak
current is in the predetermined range, after it is checked that the
conductive needle 305 and the conductive needle 303 are kept apart
from the semiconductor wafer W, the semiconductor wafer W is kept
apart from the static electricity chuck mechanism 110. Thereafter,
the semiconductor wafer W is unloaded from the exposure processing
chamber 4 by the conveying mechanism 72.
[0246] Thereafter, the semiconductor wafer W is loaded into the
vacuum preparation chamber 60 by the conveying mechanism 72. Next,
the semiconductor wafer W is unloaded from the vacuum preparation
chamber 60 by the conveying mechanism 20. The semiconductor wafer W
is conveyed to the temperature adjustment plate 27 of the heat
processing section 22 by the conveying mechanism 20. The
semiconductor wafer W is held on the temperature adjustment plate
27 or by the conveying mechanism 20 for a predetermined period of
time (this period of time is constant for each of the plurality of
semiconductor wafers W) based on information that the control
mechanism 166 has calculated corresponding to the end time of the
exposure process and a period of time for which the semiconductor
wafer W has been placed in reduced pressure. Thereafter, the
semiconductor wafer W is placed on the heating plate 26. The
heating plate 26 performs a heat process for the semiconductor
wafer W. Since the period of time for which the heat process is
started needs to be constant for each of the plurality of
semiconductor wafers W, it is necessary to manage the period of
time for which the semiconductor wafer W is conveyed from the
temperature adjustment plate 27 to the heating plate 26. When the
semiconductor wafer W is held by the conveying mechanism 20, it is
necessary to manage the period of time for which the semiconductor
wafer W is conveyed from the conveying mechanism 20 to the
temperature adjustment plate 27 and the period of time for which
the semiconductor wafer W is conveyed from the temperature
adjustment plate 27 to the heating plate 26.
[0247] The semiconductor wafer W for which the heat process has
been performed at the predetermined temperature is transferred to
the temperature adjustment plate 27. Thereafter, the semiconductor
wafer W is transferred from the temperature adjustment plate 27 to
the conveying mechanism 20. Thereafter, the semiconductor wafer W
is unloaded from the heat processing section 22 by the conveying
mechanism 20. Thereafter, the semiconductor wafer W is temporarily
aligned by the alignment mechanism 21 and then conveyed to the
receiving portion 11 of the resist processing device 2. Instead,
the semiconductor wafer W may be directly conveyed to the receiving
portion 11 of the resist processing device 2. When the
semiconductor wafer W is conveyed, the control mechanism 180 and/or
the control mechanism 166 needs to ask the control mechanism 184
whether the receiving portion 11 has a semiconductor wafer W. Only
when the control mechanism 180 and/or the control mechanism 166 has
checked that the receiving portion 11 does not have a semiconductor
wafer W, the conveying mechanism 20 conveys the semiconductor wafer
W to the receiving portion 11. Before or after the semiconductor
wafer W is conveyed to the receiving portion 11, the control
mechanism 180 and/or the control mechanism 166 sends information
about the semiconductor wafer W and information about the end time
of the process of the heating plate 26 to the control mechanism
184.
[0248] The control mechanism 184 manages time information about
individual sections of the apparatus corresponding to information
received from the control mechanism 180 and/or the control
mechanism 166 and conveys the semiconductor wafer W to the
developing device (developer (DEV)). The developing device performs
a developing process for the semiconductor wafer W. Thereafter, a
sequence of operations is completed.
[0249] Next, with reference to FIG. 31, a substrate processing
apparatus according to another embodiment of the present invention
will be described. In FIG. 31, similar portions to those of the
foregoing embodiment will be denoted by similar reference numerals
and their description will be described. As shown in FIG. 31, six
surfaces, which are an upper surface, a lower surface, a left
surface, a right surface, a front surface, and a rear surface of
each of an exposure processing chamber 4, a reduced pressure
conveying chamber 70, and a vacuum preparation chamber 60 are
covered by a magnetism penetration suppressing mechanism (first
magnetic shield), for example a magnetic shield member 121 that
non-magnetically shields a member made of for example permalloy,
magnetic soft iron, magnetic steel iron, Sendust, or ferrite. As
described above, the exposure processing chamber 4 is covered by
the magnetic shield member 121 because an electron beam is
deflected by magnetism. Thus, the magnetism shield member 121
prevents the yield of the exposure process for a semiconductor
wafer W from lowering. Although the whole apparatus may be covered
by the magnetism shield member 121, since the apparatus becomes
large, such a method is neither practical, nor economical. In
addition, since the apparatus has a magnetic generation source such
as a control device, it is preferred that the exposure processing
chamber 4, the reduced pressure conveying chamber 70, and the
vacuum preparation chamber 60 be covered by the magnetism shield
member 121. Although only the exposure processing chamber 4 may be
covered by the magnetism shield member 121, magnetism generated by
the reduced pressure conveying chamber 70 and the vacuum
preparation chamber 60 cannot be effectively prevented. Thus, it is
necessary to cover at least the exposure processing chamber 4 and
the reduced pressure conveying chamber 70 by the magnetism shield
member 121. It is preferred that the exposure processing chamber 4,
the reduced pressure conveying chamber 70, and the vacuum
preparation chamber 60 be covered by the magnetism shield member
121. In addition, to downsize the system, it is more preferred that
only the exposure processing chamber 4 be covered by the magnetism
shield member 121.
[0250] Disposed inside the magnetic shield member 121 is a
magnetism penetration suppressing mechanism (second magnetic
shield), for example a magnetic shield member 500, that
electromagnetically shields the inside. The magnetic shield member
1500 is for example Helmholtz coils. The Helmholtz coils are
disposed on the six inner surfaces, which are an upper surface, a
lower surface, a left surface, a right surface, a front surface,
and a rear surface of the magnetism shield member 121. A power
supply 1501 is connected to each surface of the magnetic shield
member 1500 so that a current having a predetermined current value
and a predetermined frequency flows in each surface. Disposed at a
predetermined position of an inner area of the magnetic shield
member 1500 is a magnetic sensor 1502 that measures magnetism.
Based on the measured result of the magnetic sensor 1502, a control
mechanism 1503 controls the power supply 1501 for a current value,
frequency, and current direction for the current that flows in the
magnetic shield member 1500 so as to control a magnetic field
generated in an inner area of the magnetic shield member 1500.
[0251] In this structure, the exposure processing chamber 4 can be
prevented from being affected by a magnetic field generated by an
external device. Thus, the throughput of the exposure process can
be improved. In addition, although the magnetic shield member 1500
generates a magnetic field that varies, since the magnetic shield
member 1500 is covered by the magnetic shield member 121, the
magnetic shield member 1500 does not magnetically affect the
outside of the apparatus. Thus, the intensity of the magnetic field
in the exposing device 1 is half or less of that of the outside
thereof.
[0252] Like the foregoing amplifier section 130, the power supply
1501 is disposed opposite to the reduced pressure conveying chamber
70 of the exposure processing chamber 4. The height of the power
supply 1501 is greater than the height h5 of the holding surface of
a semiconductor wafer W on the stage 91. Preferably, the height of
the power supply 1501 is greater than the height h6 of a loading
openings 89 as a conveying opening for the semiconductor wafer W of
the exposure processing chamber 4. More preferably, the height of
the power supply 1501 is greater than the height h7 of an electron
beam emitted from a column 100. Otherwise, an electromagnetic wave
generated from the power supply 1501 affects an electron beam.
[0253] It is preferred that the magnetic sensor 1502 be disposed
outside the exposure processing chamber 4 or at a predetermined
position of the inside of the exposure processing chamber 4. As
long as a semiconductor wafer W exposed in the exposure processing
chamber 4 is prevented from being magnetically affected, the
magnetic sensor 1505 may be disposed anywhere outside the exposure
processing chamber 4 or at a predetermined position of the inside
of the exposure processing chamber 4. When the magnetic sensor 1502
cannot be disposed in the exposure processing chamber 4, data of
magnetic field in the exposure processing chamber 4 and data of
magnetic field shielded by the coils controlled by the control
mechanism 1503 may be stored in a storage mechanism. Based on the
relationship of the stored magnetic data and the magnetic sensor
1502 disposed outside the exposure processing chamber 4, the coils
may be controlled.
[0254] As shown in FIG. 32, with respect to controls of the
Helmholtz coils 1500, a left coil 1510, a right coil 1511, an upper
coil 1512, and a lower coil 1513 are disposed (for convenience,
description of a front coil and a rear coil will be omitted).
Currents that flow in the same direction (arrow directions in FIG.
37) are supplied from the power supply 1501 to a pair of coils that
face each other, for example the left coil 1510 and the right coil
1511. Likewise, currents that flow in the same direction (arrow
direction in FIG. 32) are supplied from the power supply 1501 to
another pair of coils that face each other, for example the upper
coil 1512 and the lower coil 1513. Of course, this applies to
another pair that face each other, for example the front coil and
the rear coil. However, with respect to frequency, current value,
and/or DC (Direct Current component) value, it is preferred that
the coils be controlled by the control mechanism 1503 in different
condition, for example the frequency and/or current value of for
example the left coil 1510 is different from that of the right coil
1511 or the frequency, current value, and/or DC value of the right
coil 1511 and the left coil 1510 is different from that of the
upper coil 1512 and the lower coil 1513 so that the magnetic field
at a predetermined position, for example position 0, becomes a
predetermined value, for example 0. In the foregoing description,
for convenience, only the left coil 1510, the right coil 1511, the
upper coil 1512, and the lower coil 1513 were controlled. However,
of course, the coils including the front coil and the rear coil
need to be properly controlled. These coils need to be controlled
on the X, Y, and Z axes so that the magnetic field at the
predetermined position 0 becomes a predetermined value.
[0255] When necessary, the Helmholtz coils 1500 need to be
controlled based on electric charges that are present in the static
electricity chuck and that are measured by an ammeter 320 of the
static electricity chuck or pre-stored data. In addition, as
described above, the Helmholtz coils 1500 generate a varying
magnetic field. Thus, the Helmholtz coils 1500 may generate a
magnetic field outside the apparatus. Thus, although the magnetic
shield member 121 as a magnetic field suppressing mechanism
prevents a magnetic field from entering into the apparatus, the
magnetic shield member 121 also has a function as a mechanism that
prevents a magnetic field of the Helmholtz coils 1500 from
diffusing outside the apparatus.
[0256] Next, with reference to FIG. 33, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 33, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 33, formed on an upper surface (an upper portion
(an electron gun 501 side)) of a cylindrical member 612 of the
static electricity deflecting device is a concave portion 1600 as a
circular cutout portion. Formed on a lower surface (a lower portion
of FIG. 33 (on a semiconductor wafer W side)) of the cylindrical
member 612 of the static electricity deflecting device is a convex
portion 1601 as a circular protrusion portion. In this structure,
when two static electricity deflecting devices or a static
electricity deflecting device and another member are stacked
through a support member made of an insulative material, they can
be easily aligned. As a result, maintenance work or mounting work
can be quickly and efficiently performed. The concave portion 1600
and/or the convex portion 1601 is formed the middle of an middle
layer 604 to an inner layer 606. Instead, the concave portion 1600
and/or the convex portion 1601 may be formed only in the inner
layer 606.
[0257] Next, with reference to FIG. 34, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 34, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 34, formed on an upper surface (an upper portion
of FIG. 34 (on an electron gun 501 side)) of a cylindrical member
612 of the static electricity deflecting device is a first concave
portion 1600 as a circular cutout portion. Formed on a lower
surface (a lower portion of FIG. 34 (on a semiconductor wafer W
side)) of the cylindrical member 612 is a second concave portion
1602 as a circular cutout portion. In this structure, when two
static electricity deflecting devices or a static electricity
deflecting device and another member are stacked through a support
member made of an insulative material, they can be easily aligned.
Thus, maintenance work or mounting work can be quickly and
efficiently performed. The concave portions 1600 and 1602 are
formed from the middle of a middle layer 604 to a inner layer 606.
Instead, the concave portions 1600 and 1602 may be formed only in
the inner layer 606.
[0258] Next, with reference to FIG. 35, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 35, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 35, formed on an upper surface (an upper portion
of FIG. 35 (on an electron gun 501 side)) of a cylindrical member
612 of the static electricity deflecting device is a first concave
portion 1600 as a ring-shaped cutout portion. Formed on a lower
surface (a lower portion of FIG. 35 (on a semiconductor wafer W
side)) is a second concave portion 1602 as a cutout portion. Formed
inside the concave portion 1600 and/or the second concave portion
1602 is a third concave portion 1603 as a circular cutout portion.
Since only a middle layer 604 as an electrical insulator protrudes,
when two static electricity deflecting devices are stacked, since
only their middle layers 604 contact, a support member made of an
insulator can be omitted. Thus, the system can be efficiently
structured. In addition, formed on an outer layer 601 is a fourth
concave portion 1604 as a ring-shaped cutout portion. In this
structure, the static electricity deflecting device can be easily
supported by a support member made of an insulative material from
an outer circumference of the static electricity deflecting device.
The concave portions 1600, 1602, and 1603 are formed from the
middle of a middle layer 604 to an inner layer 606. Instead, the
concave portions 1600, 1602, and 1603 may be formed only in the
inner layer 606. In these embodiments, various convex portions
and/or concave portions are formed on the upper surface and/or the
lower surface of the static electricity deflecting device. Instead,
convex portions and/or concave portions may be formed in various
combinations on the upper surface and/or the lower surface of the
static electricity deflecting device such that static electricity
deflecting devices efficiently mounted and/or aligned.
[0259] Next, a manufacturing method of the static electricity
deflecting device according to an embodiment of the present
invention will be described. For simplicity, in FIG. 36, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 36, a predetermined member, for example a
conductive member 1700, that can contact a voltage input terminal
605 is disposed on an electron beam passing portion 609 side of a
inner layer 606 of the static electricity deflecting device. The
voltage input terminal 605 is inserted into a voltage input
terminal opening 1605 from the outside of an outer layer 601. An
edge portion 1701 of the voltage input terminal 605 is pressed to
the conductive member 1700. As a result, the voltage input terminal
605 is connected to the static electricity deflecting device. The
edge portion 1701 of the voltage input terminal 605 has a convex
portion 1701, for example a plurality of needle-shaped members,
that allow the edge portion 1701 to securely electrically contact
the conductive member 1700. Thereafter, as shown in FIG. 37, the
conductive member 1700 is scraped off for a predetermined
thickness. It is preferred that the thickness of the conductive
member 1700 to be scraped off be smaller than the thickness of the
deflecting electrode 603. Since at least a part of the conductive
member 1700 is scraped off, it can be said that the conductive
member 1700 is a sacrifice member.
[0260] Thereafter, a deflecting electrode 603 is formed on the
inner layer 606 on the electron beam passing portion 609 side of
the static electricity deflecting device for a predetermined
thickness by the spatter method or plating method. At this point,
it is preferred that the deflecting electrode 603 on the electron
beam passing portion 609 side of the inner layer 606 of the static
electricity deflecting device be not unevenly formed. Thus, when
the deflecting electrode 603 is flat against an electron beam
emitted from the electron gun 501, the deflecting electrode 603 can
be prevented from adversely affecting the electron beam. As another
example, after a base film (first film) of the deflecting electrode
603 is formed, the conductive member 1700 is formed. Thereafter,
the voltage input terminal 605 is inserted from the outside of the
outer layer 601 into the voltage input terminal opening 1605. The
edge portion 1701 of the voltage input terminal 605 is pressed to
the conductive member 1700. As a result, the voltage input terminal
605 is connected to the static electricity deflecting device.
Thereafter, the conductive member 1700 is scraped off for a
predetermined thickness. Thereafter, the deflecting electrode 603
as the foregoing main base film (second film) is formed on the
inner layer 606 on the electron beam passing portion 609 side of
the static electricity deflecting device by the spatter method or
the plating method.
[0261] Next, with reference to FIG. 38, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 38, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 38, a space portion 608 of a cylindrical member
612 of the static electricity deflecting device is formed in an
elliptic shape. In addition, elliptic concave portions 1800 are
formed at a plurality of positions, for example two positions. A
part of a deflecting electrode 603 is uniformly formed for a
predetermined portion of the space portion 608. In addition, a
first conductive film 602 is formed nearly from the end of the
concave portion 1800. Since the space portion 608 is formed in such
an elliptic shape, the diameter of the static electricity
deflecting device can be decreased. In addition, since the concave
portions 1800 allow the substantial volume of the space portion 608
to be provided, resulting in preventing an abnormality such as
abnormal discharging from occurring.
[0262] Next, with reference to FIG. 39, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 39, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 39, a cylindrical member 612 of the static
electricity deflecting device is composed of an inner layer 1800
made of a conductive material for example a metal and an outer
layer 601 made of an insulative material, for example ceramic. In
this example, the static electricity deflecting device has eight
deflecting electrodes. As shown in FIG. 40, a connection portion
607 is a groove radially formed from the center of the static
electricity deflecting device. The outer layer 601 is visible from
the center of the static electricity deflecting device. In
addition, since the material of the inner layer 1800 is
substantially different from the material of the outer layer 601,
they are unified by connecting or brazing them. In this structure,
the insulative area of one connection portion 607 (groove) becomes
small in comparison with that of the related art. Since the inner
layer 1800 is made of a metal, the groove can be easily formed. In
addition, since the groove can be easily formed, the aspect ratio
(the length of the groove/the width of the groove) of the inner
layer 1800 to the outer layer 601 as an insulative member become
large. Thus, deflecting electrodes that less drift can be
formed.
[0263] Next, with reference to FIG. 41, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 41, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 41, a connection portion 607 of a cylindrical
member 612 of the static electricity deflecting device is radially
formed as a groove having a plurality of stairs from the center of
the static electricity deflecting device. Thus, since grooves are
radially formed from the center of the static electricity
deflecting device, the outer layer 601 is not visible from the
center of the static electricity deflecting device. In this
structure, the aspect ratio (the length of the groove/the width of
the groove) becomes large. Thus, deflecting electrodes that less
drift can be formed.
[0264] Next, with reference to FIG. 42, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 42, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 42, a connection portion 607 of a cylindrical
member 612 of the static electricity deflecting device is composed
of a groove that has a predetermined length and a predetermined
angle (first angle), for example .theta.1, measured from a radial
line from the center of the static electricity deflecting device,
and a grove that is connected the foregoing groove and the outer
layer 601 and that has a predetermined angle (first angle), for
example -.theta.2, measured from the radial line from the center of
the static electricity deflecting device. Thus, since grooves are
radially formed from the center of the static electricity
deflecting device, the outer layer 601 is not visible from the
center of the static electricity deflecting device. In this
structure, the aspect ratio (the length of the groove/the width of
the groove) becomes large. Thus, deflecting electrodes that less
drift can be formed.
[0265] Next, with reference to FIG. 43, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 43, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 43, in an inner layer 1800, a concave portion 1801
is formed such that static electricity deflecting devices can be
easily stacked or a static electricity deflecting device can be
easily aligned with a support member. In this embodiment, the
thickness of the inner layer 1800 is smaller than the thickness of
an outer layer 601. Instead, the concave portion 1801 may be formed
from the middle of the outer layer 601 to the inner layer 1800. A
connection portion 607 of a cylindrical member 612 of the static
electricity deflecting device is radially formed as a groove having
a plurality of stairs from the center of the static electricity
deflecting device. Thus, since grooves are radially formed from the
center of the static electricity deflecting device, the outer layer
601 is not visible from the center of the static electricity
deflecting device. In this structure, the aspect ratio (the length
of the groove/the width of the groove) becomes large. Thus,
deflecting electrodes that less drift can be formed.
[0266] Next, with reference to FIG. 44, a static electricity
deflecting device according to another embodiment of the present
invention will be described. For simplicity, in FIG. 44, similar
portions to those of the foregoing embodiment will be denoted by
similar reference numerals and their description will be omitted.
As shown in FIG. 44, a cylindrical member 612 of the static
electricity deflecting device is composed of an inner layer 1800
(corresponding to the inner layer 606) made of a conductive
material for example a metal, a middle layer 604 made of the
foregoing material, and an outer layer 601 made of the foregoing
material, for example ceramic. In this example, the static
electricity deflecting device has eight deflecting electrodes. As
shown in FIG. 40, a connection portion 607 is a stair-shaped (or
radial) groove from the center of the static electricity deflecting
device. The outer layer 601 is not visible from the center of the
static electricity deflecting device. In addition, since the
material of the inner layer 1800 is substantially different from
the material of the outer layer 601, they are unified by connecting
or brazing them. In this structure, the insulative area of one
connection portion 607 (groove) becomes small in comparison with
that of the related art. Since the inner layer 1800 is made of a
metal, the groove can be easily formed. In addition, since the
groove can be easily formed, the aspect ratio (the length of the
groove/the width of the groove) of the inner layer 1800 to the
outer layer 601 as an insulative member become large. Thus,
deflecting electrodes that less drift can be formed. In such a
manner, the static electricity deflecting device can be structured
in a combination of the foregoing embodiments without departing
from the spirit and scope of the present invention.
[0267] Next, with reference to FIG. 45, a substrate processing
apparatus according to another embodiment of the present invention
will be described. For simplicity, in FIG. 45, similar portions to
those of the foregoing embodiment will be denoted by similar
reference numerals and their description will be omitted. As shown
in FIG. 45, when a magnetic field generating mechanism such as an
air vent mechanism, for example an ion pump, for example, a coaxial
type ion pump, is used, a magnetic field 1900 is generated in a
predetermined direction. The magnetic field 1900 prevents an
electron beam that is emitted by the electron gun 501 from
traveling straight, thereby causing the electron beam to become a
bent beam 2002. To suppress such a problem, as deflection
compensation means that compensates traveling of an electron beam
outside the exposure processing chamber 4 and that surrounds a
magnetic field generation source such as an ion pump, for example a
motor, a power supply, an amplifier portion 130, or a control
mechanism, a magnetic field suppressing mechanism (third magnetic
shield) that surrounds them, for example a magnetic shield member
2001, for example a member made of for example permalloy, magnetic
soft iron, magnetic steel iron, Sendust, ferrite, or the like. The
magnetic shield member 2001 is designed to cause a moving mechanism
(not shown) to compensate the bent portion 2002 of the electron
beam with a moving mechanism (not shown). The control mechanism may
be designed to automatically control the moving mechanism to move
the magnetic shield member 2001. Instead, the magnetic shield
member 2001 may be manually aligned.
[0268] When a varying magnetic field suppressing mechanism (third
magnetic field), for example, a magnetic shield member that
electromagnetically shields a substance, for example, a Helmholtz
coil is used for the magnetic shield member 2001 instead of the
foregoing fixed shield, the moving mechanism may be omitted. When a
magnetic source generates a DC magnetic field, such a shield may be
used. The column 100 may be surrounded by this shield.
[0269] As the relationship of the magnetic shield member 1500,
which is the second magnetic shield, and the magnetic shield member
2001, which is the third magnetic shield, one of the second
magnetic shield and the third magnetic shield may be disposed
outside the other of the second magnetic shield and the third
magnetic shield. For example, the third magnetic shield may be
disposed inside the second magnetic shield. The second magnetic
shield may be disposed inside the third magnetic shield. Instead,
the third magnetic shield may be disposed inside the second
magnetic shield and the second magnetic shield is disposed inside
the third magnetic shield as a mixed arrangement. However, it is
preferred that the first magnetic shield, which is the foregoing
fixed shield, be disposed outside the second magnetic shield and
the third magnetic shield to prevent a magnetic field from being
generated outside the second magnetic shield and the third magnetic
shield.
[0270] As described above, in this embodiment, since a static
electricity deflecting device of the column in the electron beam
irradiating apparatus disposed in the exposure processing chamber
is provided with space portions as electron capturing areas,
electrons that entered into the space portions do not easily return
to the electron beam passing section. Even if charge-up occurs due
to electrons that entered into the space portions, electrons are
quickly discharged by the first conductive film. Thus, an electron
beam is not deflected to other than a desired position. As a
result, the exposure accuracy does not deteriorate due to
charge-up.
[0271] Although the present invention has been shown and described
with respect to a best mode embodiment thereof, it should be
understood by those skilled in the art that the foregoing and
various other changes, omissions, and additions in the form and
detail thereof may be made therein without departing from the
spirit and scope of the present invention. For example, in the
foregoing embodiments, a semiconductor wafer was described as a
substrate under processing. However, the substrate under processing
may be a plate shape substrate such as an LCD substrate. In
addition, the shape of the space portions was described as a
circular shape having curved portions. However, the present
invention is not limited to such an example.
* * * * *