U.S. patent application number 11/462413 was filed with the patent office on 2008-02-07 for novel photoresist materials and photolithography process.
This patent application is currently assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.. Invention is credited to Ching-Yu CHANG, H. J. LEE, Burn Jeng LIN, Chin-Hsiang LIN, Hua-Tai LIN, Hsien-Cheng WANG.
Application Number | 20080030692 11/462413 |
Document ID | / |
Family ID | 39028785 |
Filed Date | 2008-02-07 |
United States Patent
Application |
20080030692 |
Kind Code |
A1 |
WANG; Hsien-Cheng ; et
al. |
February 7, 2008 |
NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESS
Abstract
A material for use in lithography processing includes a polymer
that turns soluble to a base solution in response to reaction with
acid and a plurality of magnetically amplified generators (MAGs)
each having a magnetic element and each decomposing to form acid
bonded with the magnetic element in response to radiation
energy.
Inventors: |
WANG; Hsien-Cheng; (Hsinchu,
TW) ; LIN; Chin-Hsiang; (Hsin-Chu, TW) ; LEE;
H. J.; (Hsin-Chu, TW) ; CHANG; Ching-Yu;
(Yilang County, TW) ; LIN; Hua-Tai; (Hsin-Chu,
TW) ; LIN; Burn Jeng; (Hsin-Chu, TW) |
Correspondence
Address: |
HAYNES AND BOONE, LLP
901 Main Street, Suite 3100
Dallas
TX
75202
US
|
Assignee: |
TAIWAN SEMICONDUCTOR MANUFACTURING
COMPANY, LTD.
Hsin-Chu
TW
|
Family ID: |
39028785 |
Appl. No.: |
11/462413 |
Filed: |
August 4, 2006 |
Current U.S.
Class: |
355/18 ;
430/311 |
Current CPC
Class: |
G03F 7/0397 20130101;
G03F 7/38 20130101; G03F 7/70858 20130101; G03F 7/0392 20130101;
Y10S 430/106 20130101; G03F 7/0045 20130101; G03F 7/30 20130101;
Y10S 430/111 20130101 |
Class at
Publication: |
355/18 ;
430/311 |
International
Class: |
G03F 7/26 20060101
G03F007/26 |
Claims
1. A material for use in lithography processing, comprising: a
polymer that turns soluble to a base solution in response to
reaction with acid; and a plurality of magnetically amplified
generators (MAGs) each having a magnetic element and each
configured to decompose to form acid bonded with the magnetic
element in response to a radiation energy.
2. The material of claim 1, wherein the magnetic element comprises
an iron-containing magnetic chemical group.
3. The material of claim 1, wherein the magnetic element comprises
at least one of Fe.sub.3O.sub.4 and Fe.sub.2O.sub.3.
4. The material of claim 1, wherein the magnetic element comprises
at least one of Fe.sub.3O.sub.4 and Fe.sub.2O.sub.3 doped with
transitional metal ions.
5. The material of claim 1, wherein the magnetic element comprises
a component selected from the group consisting of Fe, Co, Ni, Sc,
Ti, V, Cr, Mn, Cu, Zn, Na, K, Mg, Ca, Al, Ga, compounds thereof,
and combinations thereof.
6. The material of claim 1, wherein the magnetic element has a
linear size ranging between about 0.1 micrometer and 10
micrometer.
7. The material of claim 1, wherein the magnetic element comprises
a composite structure.
8. The material of claim 1, wherein the magnetic element is
chemically bonded to one of the plurality of MAGs.
9. The material of claim 1, further comprising a plurality of
quenchers that are capable of neutralizing acid.
10. The material of claim 9, wherein the plurality of quenchers
comprise second magnetic elements bonded thereto.
11. The material of claim 1, wherein the plurality of MAGs each
comprises a polycyclic aromatic group.
12. A method for photolithography, comprising: forming a photo
sensitive layer on a substrate, the photo sensitive layer
including: a polymer that turns soluble to a base solution in
response to reaction with acid; and a plurality of magnetically
amplified generators (MAGs) that decompose to form acid associated
with magnetic elements in response to radiation energy; exposing
the photo sensitive layer to a radiation energy; applying a
magnetic field to the photo sensitive layer on the substrate; and
developing the exposed photo sensitive layer.
13. The method of claim 12, wherein the application of the magnetic
field comprises applying a magnetic field perpendicular to the
substrate.
14. The method of claim 12, wherein the application of the magnetic
field comprises applying an alternating magnetic field changing
amplitude and direction at a predefined frequency.
15. The method of claim 12, wherein the formation of the photo
sensitive layer comprises forming the photo sensitive layer in a
multilevel structure.
16. The method of claim 12, further comprising: baking the photo
sensitive layer between the exposing and the developing steps.
17. The method of claim 16, wherein the baking occurs at least
partially concurrent with the applying the magnetic field.
18. The method of claim 12, wherein the substrate is selected from
the group consisting of a semiconductor substrate, a photomask
substrate, and thin-film-transistor liquid-crystal-display
(TFT-LCD) substrate.
19. The method of claim 12, wherein the exposing of the photo
sensitive layer comprises performing the exposing in an immersion
lithography environment.
20. An apparatus for lithography processing, comprising: a chamber;
a substrate stage in the chamber operable to hold a substrate; and
a magnetic module configured to provide a magnetic field to the
substrate on the substrate stage.
21. The apparatus of claim 20, further comprising: a radiation
energy source; and an objective lens configured to receive
radiation energy form the radiation energy source and direct the
radiation energy toward the substrate positioned on the substrate
stage.
22. The apparatus of claim 20, wherein the magnetic module is
configured to provide the magnetic field in a tunable and
alternating configuration.
23. The apparatus of claim 20, wherein the magnetic module is
configured to provide the magnetic field perpendicular to a
substrate positioned on the substrate stage.
24. The apparatus of claim 20, further comprising a baking module
to heat a substrate positioned on the substrate stage.
25. The apparatus of claim 20, further comprising a fluid module
configured to provide a fluid and hold thereof for immersion
lithography processing.
Description
BACKGROUND
[0001] When the minimum feature size of an integrated circuit (IC)
shrinks to 250 nm or less, traditional photolithography technology
has various difficulties to achieve high resolution in photoresist
patterning. For example, shorter wavelength light such as deep
ultraviolet (DUV) including 248 nm UV by krypton fluoride (KrF)
excimer lasers and 193 nm UV by argon fluoride (ArF) excimer lasers
are employed to realize patterning integrated circuit features much
smaller, such as those in 130 nm, 90 nm, and 65 nm technology
nodes. However, DUV radiation is not compatible with many different
types of photoresist. Correspondingly, a new type of photoresist
material, referred to as chemical amplified resists (CAR), has been
adopted for use with DUV. However, in CAR, photo generated acid in
exposed regions often diffuses into unexposed regions, causing
blurring of the latent image and resulting in lateral bias of the
exposed image.
[0002] It is desired to provide a new and improved system and
process for supporting DUV and other types of photolithography. It
is also desired to provide new photoresist materials that overcome
one or more problems associated with conventional materials.
BRIEF DESCRIPTION OF THE DRAWINGS
[0003] Aspects of the present disclosure are best understood from
the following detailed description when read with the accompanying
figures. It is noted that, in accordance with the standard practice
in the industry, various features are not drawn to scale. In fact,
the dimensions of the various features may be arbitrarily increased
or reduced for clarity of discussion.
[0004] FIG. 1 is a flowchart of one embodiment of a method of
lithography patterning utilizing magnetically-amplified resist.
[0005] FIGS. 2 through 5 illustrate sectional views of one
exemplary semiconductor device utilizing magnetically-amplified
resist during various stages of a lithography patterning
process.
[0006] FIG. 6 illustrates a schematic view of one embodiment of a
lithography apparatus designed for processing
magnetically-amplified resist and utilizing the method of FIG.
1.
DETAILED DESCRIPTION
[0007] It is understood that the following disclosure provides many
different embodiments, or examples, capable of implementing
different features of the invention. Specific examples of
components and arrangements are described below to simplify and
thus clarify the present disclosure. These are, of course, merely
examples and are not intended to be limiting. For example, the
formation of a first feature over or on a second feature in the
description that follows may include embodiments in which the first
and second features are formed in direct contact, and may also
include embodiments in which additional features may be formed
interposing the first and second features, such that the first and
second features may not be in direct contact. In addition, the
present disclosure may repeat reference numerals and/or letters in
the various examples. This repetition is for the purpose of
simplicity and clarity and does not in itself dictate a
relationship between the various embodiments and/or configurations
discussed.
[0008] FIG. 1 is a flowchart of one embodiment of a method 100 of
lithography patterning utilizing magnetically-amplified resist.
FIGS. 2 through 5 illustrate sectional views of one exemplary
semiconductor device 200 utilizing magnetically-amplified resist
during various stages of a lithography patterning process. FIG. 6
illustrates a schematic view of one embodiment of a lithography
apparatus 300 designed for processing magnetically-amplified resist
and utilizing the method 100. With reference to FIGS. 1 through 6,
the method 100, the semiconductor device 200 fabricated thereby,
the lithography apparatus 300, and the magnetically-amplified
resist will be collectively described below.
[0009] Referring to FIG. 1 and FIG. 2, the method 100 is initiated
at step 102 by forming, on a substrate 210 of the semiconductor
device 200, a magnetically-amplified resist (MAR) 220. The
semiconductor device 200 may be a semiconductor wafer or other
suitable devices. In the present embodiment, the substrate 210 may
include silicon. The substrate may alternatively include other
suitable semiconductor material, including Ge, SiGe, or GaAs. The
substrate may alternatively include a non-semiconductor material
such as a glass plate for thin-film-transistor liquid crystal
display (TFT-LCD) devices. The substrate 210 may further include
other materials such as low k dielectric material, oxide, and
conductive material. The substrate 210 may further include one or
more material layers to be patterned. Additionally, the substrate
210 may include a bottom anti reflecting coating (BARC).
[0010] MAR 220 is formed on the substrate 110. For example, MAR 220
may be formed on a BARC layer of the substrate 210. In the present
embodiment, MAR 220 has a thickness ranging between about 50
angstroms and 5000 angstroms. In another embodiment, MAR 220 may
have a thickness ranging between about 500 angstroms and 2000
angstroms. The formation of MAR 220 may be implemented by a
technique such as spin-on coating and may be followed by a soft
baking process.
[0011] MAR 220 includes a polymer material that turns soluble to a
developer such as a base solution when the polymer is reacted with
acid. Alternatively, MAR 220 includes a polymer material that turns
insoluble to a developer such as a base solution when the polymer
is reacted with acid. MAR 220 further includes a solvent filling
inside the polymer. The solvent may be partially evaporated due to
a prior baking process. The MAR 220 also includes a
magnetically-amplified generator (MAG) 230, with MAG molecules
distributed inside the solvent and/or polymer. When absorbing photo
energy (or radiation energy), the MAG 230 decomposes and forms a
small amount of acid bonded with a magnetic element (referred to as
magnetic acid). In the present embodiment, MAG 230 includes a
polycyclic aromatic group. MAG 230 may have a concentration ranging
between about 1% and 20% wt of MAR 220. In the present embodiment,
MAG 230 is adopted as a replacement to a photo-acid generator (PAG)
and is incorporated into polymer to form MAR 230. The magnetic
element is chemically or otherwise bonded to MAG 230. Upon
absorbing photo energy, the magnetic element is bonded to a
corresponding acid formed from MAG.
[0012] The magnetic element may include an iron-containing magnetic
chemical group. In one embodiment, the magnetic element includes at
least one of Fe.sub.3O.sub.4 and Fe.sub.2O.sub.3. In another
embodiment, the magnetic element includes a transitional metal such
as Fe.sub.3O.sub.4 and/or Fe.sub.2O.sub.3 doped with transitional
metal ions. In another embodiment, the magnetic element includes
atoms in 1A, 2A, or 3A groups of the Periodic Table of the
Elements, such as Na, K, Mg, Ca, Al, or Ga. Alternatively, the
magnetic element may include Fe, Co, Ni, Sc, Ti, V, Cr, Mn, Cu, Zn,
Na, K, Mg, Ca, Al, Ga, compounds thereof, or combinations thereof.
The magnetic element may have a linear size ranging between about
0.1 micrometer and 10 micrometer. The magnetic element may include
a composite structure such as an organic compound with iron oxide
physically or otherwise bonded to or enclosed by the organic
compound.
[0013] In furtherance of the present embodiment, MAR 220 also
includes a quencher material (not shown) that distributes inside
the solvent and polymer. The quencher may be a base type and is
capable of neutralizing acid. Collectively or alternatively, the
quencher may inhibit other active component of MAR 220, such as
inhibiting MAG 230 and acid. The quencher may have a concentration
ranging between 0.5% and 10% wt of MAR 220. In one example, the
quencher includes a magnetic element bonded thereto, similar to the
magnetic element bonded to MAG 230.
[0014] Referring to FIG. 1 and FIG. 3, the method 100 proceeds to
step 104 by exposing the MAR 230 to photo energy. At step 104
during a photolithographic patterning process, MAR 220 is exposed
to a radiation energy such as deep ultra-violet (DUV) through a
photomask (mask or reticle) having a predefined pattern, resulting
in a resist pattern that includes a plurality of unexposed regions
such as unexposed features 220a and a plurality of exposed regions
such as exposed features 220b. The radiation energy may include a
193 nm beam by Argon Fluoride (ArF) excimer lasers, or a 157 nm
beam by Fluoride (F2) excimer lasers. The exposed MAG 230 in the
MAR 220 is decomposed as anion and acid 240, resulting in the MAR
being more soluble to water than unexposed MAR. The acid 240
generated by photo energy from MAG 230 in the exposed regions 220a
includes magnetic element bonded thereto, and is therefore referred
to as magnetic acid (MA) as mentioned above. The exposing process
may be implemented by a lithography tool such as a scanner, a
stepper, a wet lithography tool, or a cluster tool capable of photo
exposing and applying a magnetic field to MAR 220, which is further
described below.
[0015] Referring to FIGS. 1 and 4, the method 100 proceeds to step
106 by applying a magnetic field 250 to MAR 220. The magnetic field
is designed so that the magnetic acid 240 in the exposed regions of
MAR 220 is driven to move up and down substantially along a z-axis
perpendicular to the plane of the substrate 210. In the present
embodiment, the magnetic field 250 changes directions up and down
periodically or randomly, and has a gradient in magnitude along the
z-axis. In such a way, the magnetic acid is controlled to move up
and down along the z-axis in the exposed regions of MAR 220 to
cause chemical amplification, which results in more acid 245 being
formed in the exposed regions, increasing the solubility of MAR 230
of the exposed regions when placed in a developer. Since chemical
amplification is introduced by (or partially introduced by) the
magnetic field 250 instead of a high temperature baking (such as a
post exposure baking), lateral diffusion of the magnetic acid 240
is reduced. Furthermore, the chemical amplification reaction
duration is shortened. For example, the magnetic field 250 applied
to the MAR 220 may have a duration less than a few minutes, such as
somewhere between about 10 seconds and 60 seconds. As a result of
the shortened duration, the diffusion of the magnetic acid 240 is
further reduced and the diffusion of the acid 245 formed by the
chemical amplification is also reduced. The lithography patterning
resolution is enhanced accordingly.
[0016] The magnetic field 250 can be provided by a magnet device or
a cluster tool such as a cluster lithography apparatus 300
schematically illustrated in FIG. 6. The cluster lithography
apparatus 300 is designed to be operable to provide a magnetic
field such as the magnetic field 250 described above. The apparatus
300 includes a substrate stage 310 designed to secure a substrate
320 to be processed by the apparatus 300 for patterning. The
substrate stage 310 is operable to move the substrate relative to
the apparatus 300. For example, the substrate stage 310 is capable
of translational and/or rotational displacement for substrate
alignment, stepping, and scanning. The substrate stage 310 may
include various components suitable to perform precise movement. A
substrate to be held by the substrate stage 310 and processed by
the apparatus 300 may be a semiconductor wafer such as the
semiconductor device 200.
[0017] The apparatus 300 includes one or more imaging lens systems
(referred to as a "lens system") 330. The substrate 320 may be
positioned on the substrate stage 310 under the lens system 330.
The lens system 330 may further include or be integral to an
illumination system (e.g., a condenser) which may have a single
lens or multiple lenses and/or other lens components. For example,
the illumination system may include microlens arrays, shadow masks,
and/or other structures. The lens system 330 may further include an
objective lens which may have a single lens element or a plurality
of lens elements. Each lens element may include a transparent
substrate and may further include a plurality of coating layers.
The transparent substrate may be a conventional objective lens, and
may be made of fused silica (SiO2), calcium-fluoride (CaF2),
lithium fluoride (LiF), barium fluoride (BaF2), or other suitable
material. The materials used for each lens element may be chosen
based on the wavelength of light used in the lithography process to
minimize absorption and scattering.
[0018] The apparatus 300 may include an immersion fluid retaining
module 340 designed for holding an immersion fluid 350 and/or other
proper fluid such as a cleaning fluid. The module 340 may be
positioned proximate (such as around) the lens system 330 and
designed for other functions, in addition to holding the immersion
fluid. The immersion fluid to be utilized in the apparatus 300 may
include water (water solution or de-ionized water-DIW), gas, or
other suitable fluid. The module 340 may include various apertures
(or nozzles) for providing an immersion fluid for an exposure
process, and/or performing other proper functions. For example, the
module 340 may include an aperture 342 as an immersion fluid inlet
to provide and transfer the immersion fluid into a space between
the lens system 330 and the substrate 320 on the substrate stage
310.
[0019] The apparatus 300 may further include a radiation source.
The radiation source may be a suitable ultraviolet (UV) or extra
UV(EUV) light source. For example, the radiation source may be a
mercury lamp having a wavelength of 436 nm (G-line) or 365 nm
(I-line); a Krypton Fluoride (KrF) excimer laser with wavelength of
248 nm; an Argon Fluoride (ArF) excimer laser with a wavelength of
193 nm; a Fluoride (F2) excimer laser with a wavelength of 157 nm;
or other light sources having a desired wavelength (e.g., below
approximately 100 nm). The apparatus 300 may include a chamber to
provide a vacuum environment or a low pressure environment with
inert gas for protecting various components and a substrate to be
processed.
[0020] The apparatus 300 may include a photomask for use during a
lithography process. The mask may include a transparent substrate
and a patterned absorption layer. The transparent substrate may use
fused silica (SiO2) relatively free of defects, such as
borosilicate glass and soda-lime glass. The transparent substrate
may use calcium fluoride and/or other suitable materials. The
patterned absorption layer may be formed using a plurality of
processes and a plurality of materials, such as depositing a metal
film made with chromium (Cr) and iron oxide, or an inorganic film
made with MoSi, ZrSiO, SiN, and/or TiN.
[0021] In the present embodiment, the apparatus 300 includes a
magnetic module 360 designed to provide a magnetic field, such as
the magnetic field 250 in FIG. 4, to a substrate on the substrate
stage 310. The magnetic module 360 is mechanically attached to the
apparatus 300. In the present embodiment, the magnetic module 360
is attached to the module 340. The magnetic module 360 may include
conductive parts or conductive wires properly designed and
configured according to the requirement of the magnetic field 250.
The magnetic module 360 may further include or be coupled to an
electric power supply to provide the conductive parts or wires with
electric current in proper magnitude and frequency in order to
realize the magnetic field 250. For example, a conductive wire
configured around the module 340 as a magnetic solenoid as
illustrated in FIG. 6. The apparatus 300 described above can
provide the magnetic field 250 to the magnetic acid 240 in the
exposed regions of the MAR 220 at step 106. The apparatus 300 can
also be used to perform exposing process to the MAR 220 at step
104. Alternatively, steps 104 and 106 may be combined to be
implemented concurrently to MAR 220. The apparatus 300 may further
include a module to provide high temperature for baking a substrate
on the substrate stage 310.
[0022] Referring to step 106 of the method 100, a baking process
may be additionally implemented before, during, and/or after the
application of the magnetic field 250 to the MAR 220 at step 106.
The accompanying baking process may have a temperature lower and a
duration less than those of a conventional post exposure baking
process for enhanced performance and accelerated throughput.
[0023] Referring to FIGS. 1 and 5, the method 100 then proceeds to
step 108 to develop the MAR layer 220 in a developer. The MAR in
the exposed regions are substantially dissolved. The developer may
be a tetramethylammonium hydroxide (TMAH) based solution. As one
alternative, magnetic element may be bonded to the developer in
chemical or ionic bond, in order to neutralize or eliminate
magnetic element in the MAR layer 220 after the developing process.
The method 100 may further include other processing steps after the
developing of MAR 220 at step 108, such as baking,
etching/implanting, and/or stripping the MAR layer.
[0024] The present disclosure provides a material, a method, and an
apparatus for lithography patterning. The present disclosure may
have various variations without departure from the spirit of the
present disclosure. In one example, the apparatus 300 may be
reduced to only provide the magnetic field and perform step 106 of
the method 100. In another example, the apparatus 300 may be
reduced to provide both a high temperature and a magnetic field to
the MAR layer on a substrate. In other embodiments for implementing
the disclosed material, method, and/or apparatus, it is not limited
to patterning a semiconductor substrate. Other substrate such as a
glass substrate for TFT_LCD devices, or a transparent substrate
(such as fused quartz) for photomask may be patterned using the
disclosed material, method, and apparatus. In another variation,
the exposing process at step 104 may be implemented by techniques
such as maskless photolithography, x-ray lithography, electron-beam
writing, or ion-beam writing.
[0025] As an alternative to the disclosed material, method, and
apparatus, ferroelectric material may be utilized. The alternative
material, referred to as electrically amplified resist, includes a
polymer material that turns soluble to a developer such as a base
solution when the polymer is reacted with acid; a solvent filling
inside the polymer; and an electrically-amplified generator (EAG).
EAG molecules are distributed inside the solvent and/or polymer.
When absorbing photo energy, the EAG decomposes and forms a small
amount of acid with electric element (referred to as electric
acid). The electric element may be other proper material with
electric dipole moment in addition to ferroelectric material and is
chemically or otherwise bonded to EAG. In the alternative method,
step 106 will be replaced by applying an electric field to the
electrically-amplified resist layer. The electric field is designed
operable to drive the electric acid up and down along the z-axis
perpendicular to the substrate plane, resulting in chemical
amplification to form more acid in the exposed regions of the
electrically-amplified resist. The alternative apparatus is
designed to provide an electric field, instead of a magnetic field,
along the z-axis with proper magnitude and frequency capable of
driving electric acid accordingly.
[0026] Thus, the present disclosure provide a material for use in
lithography processing. The material includes a polymer that turns
soluble to a base solution in response to reaction with acid; and a
plurality of magnetically amplified generators (MAGs) each having a
magnetic element and decomposes to form acid bonded with the
magnetic element in response to radiation energy.
[0027] In some embodiments, the magnetic element may include an
iron-containing magnetic chemical group. In other embodiments, the
magnetic element may include at least one of Fe.sub.3O.sub.4 and
Fe.sub.2O.sub.3. The magnetic element may include at least one of
Fe.sub.3O.sub.4 and Fe.sub.2O.sub.3 doped with transitional metal
ions. The magnetic element may include a group selected from the
group consisting of Fe, Co, Ni, Sc, Ti, V, Cr, Mn, Cu, Zn, Na, K,
Mg, Ca, Al, Ga, compounds thereof, and combinations thereof. The
magnetic element may have a linear size ranging between about 0.1
micrometer and 10 micrometer. The magnetic element may include a
composite structure. The magnetic element may be chemically bonded
to one of the plurality of MAGs. The material may further include a
plurality of quenchers that are capable of neutralizing acid. The
plurality of quenchers may include second magnetic element bonded
thereto. The plurality of MAGs each may include a polycyclic
aromatic group.
[0028] The present disclosure also provide a method for
photolithography. The method includes forming a photo sensitive
layer on a substrate. The photo sensitive layer includes a polymer
that turns soluble to a base solution in response to reaction with
acid; and a plurality of magnetically amplified generators (MAGs)
that decompose to form acid associated with magnetic elements in
response to radiation energy. The method further includes exposing
the photo sensitive layer to a radiation energy; applying a
magnetic field to the photo sensitive layer on the substrate; and
developing the exposed photo sensitive layer.
[0029] In some embodiments, the applying of the magnetic field may
include applying a magnetic field perpendicular to the substrate.
The applying of the magnetic field may include applying an
alternating magnetic field changing amplitude and direction at a
predefined frequency. The forming of the photo sensitive layer may
include forming the photo sensitive layer in a multilevel
structure. The method may further include baking the photo
sensitive layer between the exposing and the developing steps. The
baking may occur at least partially concurrent with the applying
the magnetic field. The substrate may be selected from the group
consisting of a semiconductor substrate, a photomask substrate, and
thin-film-transistor liquid-crystal-display (TFT-LCD) substrate.
The exposing of the photo sensitive layer may include performing
the exposing in an immersion lithography environment.
[0030] The present disclosure also provides an apparatus for
lithography processing. The apparatus includes a chamber; a
substrate stage in the chamber operable to hold a substrate; and a
magnetic module configured to provide a magnetic field to the
substrate on the substrate stage. In some embodiments, the
apparatus may further includes a radiation energy source; and an
objective lens configured to receive radiation energy form the
radiation energy source and direct the radiation energy toward the
substrate positioned on the substrate stage. The magnetic module
may be designed to provide the magnetic field tunable and
alternating. The magnetic module may be configured to provide the
magnetic field perpendicular to a substrate positioned on the
substrate stage. The apparatus may further include a baking module
to heat a substrate positioned on the substrate stage. The
apparatus may further include a fluid module configured to provide
a fluid and hold thereof for immersion lithography processing.
[0031] The foregoing has outlined features of several embodiments
so that those skilled in the art may better understand the detailed
description that follows. Those skilled in the art should
appreciate that they may readily use the present disclosure as a
basis for designing or modifying other processes and structures for
carrying out the same purposes and/or achieving the same advantages
of the embodiments introduced herein. Those skilled in the art
should also realize that such equivalent constructions do not
depart from the spirit and scope of the present disclosure, and
that they may make various changes, substitutions and alterations
herein without departing from the spirit and scope of the present
disclosure.
* * * * *