U.S. patent application number 11/881801 was filed with the patent office on 2008-01-31 for capacitively coupled plasma reactor with magnetic plasma control.
Invention is credited to Michael Barnes, Heeyeop Chae, Daniel J. Hoffman, Tetsuya Ishikawa, Matthew L. Miller, Jang Gyoo Yang, Yan Ye.
Application Number | 20080023143 11/881801 |
Document ID | / |
Family ID | 31990260 |
Filed Date | 2008-01-31 |
United States Patent
Application |
20080023143 |
Kind Code |
A1 |
Hoffman; Daniel J. ; et
al. |
January 31, 2008 |
Capacitively coupled plasma reactor with magnetic plasma
control
Abstract
A plasma reactor includes a vacuum enclosure including a side
wall and a ceiling defining a vacuum chamber, and a workpiece
support within the chamber and facing the ceiling for supporting a
planar workpiece, the workpiece support and the ceiling together
defining a processing region between the workpiece support and the
ceiling. Process gas inlets furnish a process gas into the chamber.
A plasma source power electrode is connected to an RF power
generator for capacitively coupling plasma source power into the
chamber for maintaining a plasma within the chamber. The reactor
further includes at least a first overhead solenoidal electromagnet
adjacent the ceiling, the overhead solenoidal electromagnet, the
ceiling, the side wall and the workpiece support being located
along a common axis of symmetry.
Inventors: |
Hoffman; Daniel J.;
(Saratoga, CA) ; Miller; Matthew L.; (Newark,
CA) ; Yang; Jang Gyoo; (Sunnyvale, CA) ; Chae;
Heeyeop; (San Jose, CA) ; Barnes; Michael;
(San Ramon, CA) ; Ishikawa; Tetsuya; (Saratoga,
CA) ; Ye; Yan; (Saratoga, CA) |
Correspondence
Address: |
LAW OFFICE OF ROBERT M. WALLACE
2112 EASTMAN AVENUE, SUITE 102
VENTURA
CA
93003
US
|
Family ID: |
31990260 |
Appl. No.: |
11/881801 |
Filed: |
July 27, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10841116 |
May 7, 2004 |
|
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11881801 |
Jul 27, 2007 |
|
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|
10192271 |
Jul 9, 2002 |
6853141 |
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10841116 |
May 7, 2004 |
|
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Current U.S.
Class: |
156/345.33 ;
118/728 |
Current CPC
Class: |
H01J 37/32623 20130101;
H01J 37/3266 20130101; H01J 37/3244 20130101; H01J 37/32091
20130101 |
Class at
Publication: |
156/345.33 ;
118/728 |
International
Class: |
H01L 21/3065 20060101
H01L021/3065; H01L 21/285 20060101 H01L021/285 |
Claims
1. A wafer processing apparatus, comprising: a housing defining a
process chamber a wafer support configured to support a wafer
within the chamber during processing; a first process gas inlet; a
second process gas inlet; a gas distribution system, comprising: a
center circular gas disperser configured to receive a process gas
from the first process gas inlet and to distribute the process gas
into the chamber over the wafer through a first plurality of
injection ports; and an outer annular gas disperser centered around
the center gas disperser configured to receive the process gas from
the second process gas inlet and to distribute the process gas into
the chamber over the wafer through a second plurality of injection
ports.
2. The apparatus of claim 1 wherein the first and second plurality
of injection ports are annular.
3. The apparatus of claim 1 wherein the first and second plurality
of injection ports are circular holes, wherein the holes have
diameters ranging between 0.01 and 0.03 inches.
4. The apparatus of claim 1 wherein the gas distribution system
comprises an annular wall that separates the center gas disperser
and the outer gas disperser.
5. The apparatus of claim 1 further comprising: a first gas flow
controller coupled to the first process gas inlet, wherein the
first gas flow controller can be independently controlled to adjust
the amount of the process gas flowing into the center gas
disperser; a second gas flow controller coupled to the second
process gas inlet; and wherein the first and the second gas flow
controllers can be independently controlled to adjust the amount of
the process gas flowing into the center circular gas disperser
relative to the amount of process gas flowing into the outer
annular gas disperser.
6. The apparatus of claim 5 wherein the first gas flow controller
comprises a first valve and wherein the second gas flow controller
comprises a second valve.
7. The apparatus of claim 5 further comprising a dual zone
controller coupled to the first gas flow controller and the second
gas flow controller, the dual zone controller configured to adjust
flow through the first gas flow controller and through the second
gas flow controller.
8. A wafer processing apparatus, comprising: a housing defining a
processing chamber, the housing coupled to an RF ground; a
substrate support located in a chamber configured to support a
wafer during processing; first and second process gas inlets
configured to deliver a process gas into the chamber; a gas
distribution system comprising a circular gas disperser having a
circular center gas dispersing region fluidly coupled to the first
process gas inlet and an annular gas dispersing region surrounding
the center region and fluidly coupled to the second process gas
inlet, wherein the center gas dispersing region comprises a first
plurality of gas injection holes configured to introduce the
process gas into the chamber above a wafer supported on the
substrate support and the annular gas dispersing region comprises a
second plurality of gas injection holes configured to introduce the
process gas into the chamber annularly to the center gas dispersion
region above the wafer; and an RF generator coupled to an impedance
match circuit used to provide RF power to the wafer support,
wherein the impedance match circuit is coupled to the wafer support
and wherein the RF generator is coupled to the RF ground.
9. The apparatus of claim 8 wherein the first and second plurality
of gas injections holes are annular.
10. The apparatus of claim 8 wherein the first and second plurality
of injection holes have diameters ranging between 0.01 and 0.03
inches.
11. The apparatus of claim 8 wherein the gas distribution system
comprises an annular wall that forms a boundary separating the
center gas disperser and the outer gas disperser.
12. The apparatus of claim 8 wherein the first plurality of gas
injection holes are configured to introduce the process gas into a
center portion of a wafer supported on the substrate support and
the second plurality of gas injection holes are configured to
introduce the process gas into the chamber above an outer
peripheral portion of the wafer.
13. The apparatus of claim 8 further comprising: a first gas flow
controller coupled to the first process gas inlet, wherein the
first gas flow controller can be independently controlled to adjust
the amount of the process gas flowing into the center gas
disperser; and a second gas flow controller coupled to the second
process gas inlet, wherein the second gas flow controller can be
independently controlled to adjust the amount of the process gas
flowing into the outer annular gas disperser.
14. The apparatus of claim 13 further comprising a dual zone
controller coupled to the first gas flow controller and the second
gas flow controller, the dual zone controller configured to adjust
flow through the first gas flow controller and through the second
gas flow controller.
15. The apparatus of claim 8 further comprising an annular pumping
channel below and surrounding the wafer support coupled to an
exhaust line.
16. A wafer processing apparatus, comprising: a vacuum chamber
configured to support a plasma; a process gas inlet configured to
deliver a process gas used for the plasma into the vacuum chamber;
a gas disperser coupled to the process gas inlet, comprising: a
base having a plurality of injection ports formed throughout,
surrounded by an annular wall having an interior shoulder; a cover
having a top surface, a bottom surface and a plurality of fingers,
the plurality of fingers attached to the bottom surface and
extending downwardly from the bottom surface, the top surface
coupled to the process gas inlet; and wherein the fingers extend
into the injection ports of the base to form a plurality of annular
ports in the base for the process gas to flow from the gas
disperser to a processing region.
17. The apparatus of claim 16 wherein the plurality of injection
ports are circular holes, wherein the holes have diameters ranging
between 0.01 and 0.03 inches.
18. The apparatus of claim 17 further comprising an annular wall
positioned between the base and the cover forming a center gas
disperser and an outer gas disperser.
19. The apparatus of claim 18 further comprising a second process
gas inlet coupled to the top surface of the cover and positioned to
be over the outer gas disperser.
20. The apparatus of claim 19 further comprising: a first gas flow
controller coupled to the process gas inlet, wherein the first gas
flow controller can be independently controlled to adjust the
amount of the process gas flowing into the center gas disperser;
and a second gas flow controller coupled to the second process gas
inlet, wherein the second gas flow controller can be independently
controlled to adjust the amount of the process gas flowing into the
outer gas disperser.
21. The apparatus of claim 19 further comprising a dual zone
controller coupled to the first gas flow controller and the second
gas flow controller, the dual zone controller configured to adjust
flow through the first gas flow controller and through the second
gas flow controller.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of U.S. patent
application Ser. No. 10/841,116, filed May 7, 2004 entitled
CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL,
by Daniel Hoffman, et al., which is a divisional of U.S. patent
application Ser. No. 10/192,271, filed Jul. 9, 2002 entitled
CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL,
by Daniel Hoffman, et al., issued as U.S. Pat. No. 6,853,141 on
Feb. 8, 2005, which claims priority of U.S. Provisional Application
Ser. No. 60/638,194, filed May 22, 2002 entitled CAPACITIVELY
COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL by Daniel
Hoffman, et al. This application is also a continuation-in-part of
U.S. patent application Ser. No. 11/105,307, filed Apr. 12, 2005
entitled MERIE PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO
THE PLASMA WITH ARCING SUPPRESSION, by Daniel Hoffman, et al.,
issued as U.S. Pat. No. 7,186,943 on Mar. 6, 2007, which is a
continuation of U.S. patent application Ser. No. 10/007,367, filed
Oct. 22, 2001 entitled MERIE PLASMA REACTOR WITH OVERHEAD RF
ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION, by Daniel
Hoffman, et al., issued as U.S. Pat. No. 6,894,245 on May 17, 2005,
which is a continuation-in-part of U.S. patent application Ser. No.
09/527,342, filed Mar. 17, 2000 entitled PLASMA REACTOR WITH
OVERHEAD RF ELECTRODE TUNED TO THE PLASMA by Daniel Hoffman, et
al., issued as U.S. Pat. No. 6,528,751 on Mar. 4, 2003, all of
which are assigned to the present assignee.
BACKGROUND
[0002] Capacitively coupled plasma reactors are used in fabricating
semiconductor microelectronic structures with high aspect ratios.
Such structures typically have narrow, deep openings through one or
more thin films formed on a semiconductor substrate. Capacitively
coupled plasma reactors are used in various types of processes in
fabricating such devices, including dielectric etch processes,
metal etch processes, chemical vapor deposition and others. Such
reactors are also employed in fabricating photolithographic masks
and in fabricating semiconductor flat panel displays. Such
applications depend upon plasma ions to enhance or enable desired
processes. The density of the plasma ions over the surface of the
semiconductor workpiece affects the process parameters, and is
particularly critical in the fabrication of high aspect ratio
microelectronic structures. In fact, a problem in fabricating high
aspect ratio microelectronic integrated circuits is that
non-uniformities in the plasma ion density across the workpiece
surface can lead to process failure due to non-uniform etch rates
or deposition rates.
[0003] A typical capacitively coupled reactor has a wafer support
pedestal in the reactor chamber and a ceiling overlying the wafer
support. The ceiling may include a gas distribution plate that
sprays process gas into the chamber. An RF power source is applied
across the wafer support and ceiling or wall to strike and maintain
a plasma over the wafer support. The chamber is generally
cylindrical, while the ceiling and wafer support are circular and
coaxial with the cylindrical chamber to enhance uniform processing.
Nevertheless, such reactors have non-uniform plasma density
distributions. Typically, the radial density distribution of plasma
ions is high over the center of the wafer support and low near the
periphery, a significant problem. Various approaches are used to
control the plasma ion density distribution so as to improve
process uniformity across the wafer or workpiece surface, and at
least partially overcome this problem.
[0004] One such approach is to provide a set of magnetic coils
spaced circumferentially around the side of the reactor chamber,
the coils all facing the center of the chamber. A relatively low
frequency sinusoidal current is supplied to each coil, the
sinusoidal currents in adjacent coils being offset in phase so as
to produce a slowly rotating magnetic field over the wafer support.
This feature tends to improve the radial distribution of plasma ion
density over the wafer support. Where this approach is employed in
reactive ion etching, it is called magnetically enhanced reactive
ion etching (MERIE). This approach has certain limitations. In
particular, the strength of the magnetic field may need to be
limited in order to avoid device damage to microelectronic
structures on the semiconductor workpiece associated with the
strength of the magnetic field. The strength must also be limited
to avoid chamber arcing associated with the rate of change of
magnetic field strength. As a result, the total MERIE magnetic
field may need to be substantially reduced and therefore may face
substantial limitations in plasma ion density uniformity
control.
[0005] Another approach is called configurable magnetic fields
(CMF) and employs the same circumferentially spaced coils referred
to above. But, in CMF the coils are operated so as to impose a
magnetic field that extends across the plane of the workpiece
support, from one side to the other. In addition, the magnetic
field rotates about the axis of the wafer support, to produce a
time-averaged magnetic field that is radial. This is all
accomplished, in the case of a reactor having four side-by-side
coils, by furnishing one D.C. current to one pair of adjacent coils
and a different (or opposite) D.C. current to the opposite pair of
adjacent coils. The coils are switched to rotate this pattern so
that the magnetic field rotates, as mentioned above. This approach
is vulnerable to chamber or wafer arcing problems due to the abrupt
switching of the CMF magnetic fields, and therefore the magnetic
field strength must be limited. As a result, in some applications
the magnetic field cannot be sufficient to compensate for plasma
ion density non-uniformities produced by the reactor.
[0006] Thus, what is needed is a way of compensating for plasma ion
density distribution non-uniformities more efficiently (so that the
magnetic field strength can be less) and with less (or with no)
time fluctuations in the magnetic field.
SUMMARY OF THE INVENTION
[0007] A plasma reactor includes a vacuum enclosure including a
side wall and a ceiling defining a vacuum chamber, and a workpiece
support within the chamber and facing the ceiling for supporting a
planar workpiece, the workpiece support and the ceiling together
defining a processing region between the workpiece support and the
ceiling. Process gas inlets furnish a process gas into the chamber.
A plasma source power electrode is connected to an RF power
generator for capacitively coupling plasma source power into the
chamber for maintaining a plasma within the chamber. The reactor
further includes at least a first overhead solenoidal electromagnet
adjacent the ceiling, the overhead solenoidal electromagnet, the
ceiling, the side wall and the workpiece support being located
along a common axis of symmetry. A current source is connected to
the first solenoidal electromagnet and furnishes a first electric
current in the first solenoidal electromagnet whereby to generate
within the chamber a magnetic field which is a function of the
first electric current, the first electric current having a value
such that the magnetic field increases uniformity of plasma ion
density radial distribution about the axis of symmetry near a
surface of the workpiece support.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIGS. 1A, 1B and 1C illustrate a plasma reactor with an
overhead VHF electrode and overhead coils for controlling plasma
ion uniformity.
[0009] FIG. 2 illustrates an exemplary apparatus for controlling
the overhead coils of FIG. 1.
[0010] FIGS. 3A and 3B are graphical representations of a magnetic
field of the overhead coils of FIG. 1 and FIG. 3C is a spatial
representation of the same field.
[0011] FIGS. 4A, 4B, 4C and 4D are graphs of the etch rate
(vertical axis) on the wafer surface as a function of radial
location (horizontal axis) for various modes of operation of the
reactor of FIG. 1.
[0012] FIGS. 5A, 5B, 5C and 5D are graphs of the etch rate
(vertical axis) on the wafer surface as a function of radial
location (horizontal axis) for further modes of operation of the
reactor of FIG. 1.
[0013] FIG. 6 is a graph depicting etch rate as a function of
magnetic field.
[0014] FIGS. 7 and 8 illustrate the reactor of FIG. 1A with MERIE
magnets.
[0015] FIG. 9 depicts a method of operating the reactor of FIG.
1A.
[0016] FIG. 10 is a graph illustrating a comparative example of
magnetic pressure and ion or electron density as functions of
radial location on the wafer surface in the reactor of FIG. 1A.
[0017] FIG. 11 is a graph depicting etch rate non-uniformity as a
function of coil current.
[0018] FIG. 12 illustrates radial ion distribution at zero coil
current in the example of FIG. 11.
[0019] FIGS. 13A and 13B compare measured and predicted etch rate
distributions at a coil current of about 11 amperes in the example
of FIG. 11.
[0020] FIGS. 14A and 14B compare measured and predicted etch rate
distributions at a coil current of about 35 amperes in the example
of FIG. 11.
[0021] FIG. 15 depicts a further method of operating the reactor of
FIG. 1A.
[0022] FIG. 16 illustrates a magnetic field distribution obtained
in a reactor corresponding to FIG. 1A.
[0023] FIG. 17 depicts the gradient of the square of the magnetic
field of FIG. 16 in the wafer plane.
[0024] FIG. 18 illustrates another magnetic field distribution
obtained in a reactor corresponding to FIG. 1A.
[0025] FIG. 19 depicts the gradient of the square of the magnetic
field of FIG. 18 in the wafer plane.
[0026] FIG. 20 illustrates a yet further magnetic field
distribution obtained in a reactor corresponding to FIG. 1A.
[0027] FIG. 21 depicts the gradient of the square of the magnetic
field of FIG. 20 in the wafer plane.
[0028] FIG. 22 depicts yet another method of operating the reactor
of FIG. 1A.
[0029] FIG. 23 illustrates an exemplary microcontroller operation
for controlling the reactor of FIG. 1A.
[0030] FIG. 24 illustrates a plasma reactor including features
contained in the reactor of FIG. 1A.
[0031] FIG. 25 illustrates another plasma reactor including
features contained in the reactor of FIG. 1A.
[0032] FIGS. 26, 27, 28, 29A and 29B illustrate a gas distribution
plate for the reactors of FIGS. 1A, 24 and 25.
[0033] FIGS. 30 and 31 illustrate thermal control features in gas
distribution plate like that of FIG. 26.
[0034] FIGS. 32 and 33 illustrate a gas distribution plate
corresponding to FIG. 26 having dual zone gas flow control.
[0035] FIG. 34 illustrates a plasma reactor corresponding to FIG.
1A having the dual zone gas distribution plate.
[0036] FIGS. 35 and 36 illustrate exemplary dual zone gas flow
controllers.
[0037] FIG. 37 illustrates a plasma reactor corresponding to FIG.
34 having three overhead coils for controlling plasma ion
distribution.
[0038] FIGS. 38 and 39 depict different gas injection hole patterns
in the gas distribution plate of FIG. 26 for producing center low
or center high gas flow distributions, respectively.
[0039] FIGS. 40, 41, 42 and 43 illustrate different arrangements of
overhead coils for controlling plasma ion distribution.
[0040] FIGS. 44 and 45 illustrate a plasma reactor corresponding to
FIG. 1A in which the overhead coils are replaced by upper and lower
magnetic coils above and below the reactor chamber to produce a
cusp-shaped magnetic field best seen in FIG. 45.
[0041] FIG. 46 illustrates how the upper and lower coils of FIG. 44
can be replaced by configurable magnetic field (CMF) coils operated
in such a manner as to produce the cusp-shaped magnetic field of
FIG. 45.
[0042] FIGS. 47A-47D illustrate a mode of operation of the CMF
coils of FIG. 46 to produce a desired magnetic field
configuration.
[0043] FIGS. 48, 49 and 50 illustrate an annular apertured plate in
the reactor of FIG. 1A for preventing plasma ions from entering the
reactor's pumping annulus.
[0044] FIG. 51 illustrates a rectangular version of the reactor of
FIG. 1A for processing rectangularly shaped workpieces.
[0045] FIG. 52 illustrates a reactor corresponding to FIG. 1A
having a retractable workpiece support pedestal.
DETAILED DESCRIPTION
[0046] The plasma ion density distribution exhibited by a
particular plasma reactor is a function of chamber pressure, gas
mixture and diffusion, and source power radiation pattern. In the
present invention, this distribution is magnetically altered to
approximate a selected or ideal distribution that has been
predetermined to improve process uniformity. The magnetically
altered or corrected plasma ion density distribution is such that
process uniformity across the surface of the wafer or workpiece is
improved. For this purpose, the magnetically corrected plasma
distribution may be non-uniform or it may be uniform, depending
upon the needs determined by the user. We have discovered that the
efficiency with which an average magnetic field strength exerts
pressure on a plasma to change its distribution to a desired one
can be improved. This surprising result can be achieved in
accordance with this discovery by increasing the radial component
of the gradient of the magnetic field. The radial direction is
understood to be about the axis of symmetry of the cylindrical
chamber. Thus, what is needed is a magnetic field configuration
which has a large radial gradient and a small field strength in
other directions. Such a magnetic field is cusp-shaped with its
axis of symmetry coinciding with the axis of the cylindrical
reactor chamber. One way of producing a cusp-shaped magnetic field
is to provide coils above and below the cylindrical chamber and run
D.C. currents through these coils in opposite directions.
[0047] Depending upon the chamber design, it may be impractical to
provide a coil below the wafer pedestal, and therefore in a first
case, a top coil suffices for these purposes. In addition, what is
needed is for the cusp-shaped magnetic field to be configurable or
adjustable for accurate control or alteration of a plasma ion
distribution inherent in a given plasma reactor chamber (the
"ambient" plasma ion distribution). Since the plasma ion
distribution provided in different capacitively coupled reactors
can vary widely, such adjustability may be essential in some cases.
The radial component of the magnetic field gradient is chosen to
apply the magnetic pressure required to alter the ambient
distribution to the desired distribution. For example, if the
desired distribution is a uniform distribution, then the applied
magnetic field is selected to counteract the non-uniformity in the
radial distribution of plasma ion density exhibited by the reactor
in the absence of the magnetic field. In this case, for example, if
the reactor tends to have a center-high distribution of plasma ion
density, then the magnetic field gradient is chosen to sustain the
plasma density over the center of the wafer support pedestal and
enhance it near the periphery to achieve uniformity.
[0048] Such adjustability of the cusp-shaped magnetic field is
achieved in accordance with our discovery by providing at least a
second overhead coil of a different (e.g., smaller) diameter than
the first coil. The D.C. currents in the respective coils are
independently adjustable so as to permit configuration of the
cusp-shaped magnetic field in a highly flexible manner to alter
virtually any ambient plasma ion distribution to approximate some
desired plasma ion distribution. This choice of field configuration
can be designed to modify center-high or center-low plasma ion
density distributions.
[0049] One advantage that can be realized is two-fold, in that the
cusp-shaped magnetic field has a large radial gradient relative to
the magnetic field strength (as noted above) and therefore is
highly efficient in exerting corrective pressure on the plasma;
but, since the magnetic field is constant over time, there is far
less tendency to produce arcing, and therefore a somewhat stronger
magnetic field may be employed for even greater corrective capacity
when required. As will be described later in this specification,
this feature can be quite helpful at higher chamber pressures.
[0050] FIG. 1A illustrates a capacitively coupled plasma reactor
capable of providing an adjustable cusp-shaped magnetic field. The
reactor of FIG. 1A includes a cylindrical side wall 5, a ceiling 10
that is a gas distribution plate, and a wafer support pedestal 15
that holds a semiconductor workpiece 20. The ceiling 10 or gas
distribution plate may be conductive so as to enable it to serve as
an anode or it may have an anode attached to it. The ceiling 10 or
gas distribution plate is typically made of aluminum and has an
internal gas manifold and gas injection orifices in its interior
surface that face into the chamber. A process gas supply 25
furnishes process gas to the gas distribution plate 10. A vacuum
pump 30 controls the pressure inside the reactor chamber. Plasma
source power for igniting and maintaining a plasma inside the
reactor chamber is produced by an RF generator 40 connected through
an impedance match circuit 45 to the wafer support pedestal 15 so
that the wafer support pedestal serves as an RF electrode. The
anode (which may be the ceiling 10 formed of a conductor material)
is connected to RF ground so that is serves as the counter
electrode. Such a reactor tends to have a very non-uniform plasma
ion density distribution, which is typically center-high.
[0051] FIG. 1B illustrates a feature in which the ceiling 10,
rather than being connected directly to ground as in FIG. 1A, is
connected through an RF impedance match element 11 (shown only
schematically) to a VHF signal generator 12 that furnishes the
plasma source power. In this case, the RF generator 40 merely
controls the RF bias on the semiconductor wafer or workpiece 20.
(The RF impedance match element 11 may be a fixed tuning element
such as for example a coaxial tuning stub or a strip line circuit.)
Such a feature is discussed in greater detail in a later portion of
this specification.
[0052] In order to control distribution of plasma ion density, a
set of inductive coils are provided above the ceiling 10. In the
case of FIG. 1A, the set of coils includes an inner coil 60 and an
outer coil 65 which are coaxial with the cylindrical chamber and
each constitutes single winding of a conductor. While the windings
60, 65 are illustrated in FIG. 1A as being single turns, they may
each consist of plural turns arranged vertically, for example as
shown in FIG. 1B. Or, as shown in FIG. 1C, the windings 60, 65 may
extend both vertically and horizontally. In the case of FIG. 1A,
the inner coil 60 is located farther above the ceiling 10 than the
outer coil 65. However, in other cases this arrangement may be
reversed, or the two coils 60, 65 may be at the same height above
the ceiling 10.
[0053] In the case of FIGS. 1A and 1B, a controller 90 determines
the magnitude and polarity of currents flowing to the respective
overhead coils 60, 65 by controlling respective independent D.C.
current supplies 70, 75 that are connected to respective ones of
the coils 60, 65. Referring now to FIG. 2, a case is illustrated in
which the controller 90 governs the D.C. currents to the coils 60,
65 from a D.C. current supply 76 that furnished current through the
controller 90, the controller 90 being connected to respective ones
of the coils 60, 65. In either case, the controller 90 is capable
of causing D.C. currents of different polarities and magnitudes to
flow in different ones of the coils 60, 65. In the case of FIG. 2,
the controller 90 includes a pair of potentiometers 82a, 82b that
adjust the D.C. current applied to the respective coils 60, 65 and
a pair of ganged switches 84a, 84b that independently determine the
polarity of the D.C. current applied to each of the coils 60, 65. A
programmable device such as a microprocessor 91 can be included in
the controller 90 in order to intelligently govern the
potentiometers 82a, 82b and the ganged switches 84a, 84b.
[0054] The arrangement of the two coils 60, 65 illustrated in FIGS.
1A, 1B and 1C, in which the inner coil 60 is placed at a greater
height above the ceiling 10 than the outer coil 65, provides
certain advantages. Specifically, the radial component of the
magnetic field gradient provided by either coil is, at least
roughly, proportional to the radius of the coil and inversely
proportional to the axial displacement from the coil. Thus, the
inner and outer coils 60, 65 will perform different roles because
of their different sizes and displacements: The outer coil 65 will
dominate across the entire surface of the wafer 20 because of its
greater radius and closer proximity to the wafer 20, while the
inner coil 60 will have its greatest effect near the wafer center
and can be regarded as a trim coil for finer adjustments or
sculpting of the magnetic field. Other arrangements may be possible
for realizing such differential control by different coils which
are of different radii and placed at different displacements from
the plasma. As will be described later in this specification with
reference to certain working examples, different changes to the
ambient plasma ion density distribution are obtained by selecting
not only different magnitudes of the currents flowing in the
respective overhead coils (60, 65) but also by selecting different
polarities or directions of current flow for the different overhead
coils.
[0055] FIG. 3A illustrates the radial (solid line) and azimuthal
(dashed line) components of the magnetic field produced by the
inner coil 60 as a function of radial position on the wafer 20, in
the case of FIG. 1A. FIG. 3B illustrates the radial (solid line)
and azimuthal (dashed line) components of the magnetic field
produced by the outer coil 65 as a function of radial position on
the wafer 20. The data illustrated in FIGS. 3A and 3B were obtained
in an implementation in which the wafer 20 was 300 mm in diameter,
the inner coil 60 was 12 inches in diameter and placed about 10
inches above the plasma, and the outer coil 65 was 22 inches in
diameter and placed about 6 inches above the plasma. FIG. 3C is a
simplified diagram of the half-cusp shaped magnetic field line
pattern produced by the inner and outer overhead coils 60, 65.
[0056] The controller 90 of FIG. 2 can change the currents applied
to the respective coils 60, 65 in order to adjust the magnetic
field at the wafer surface and thereby change the spatial
distribution of plasma ion density. What will now be illustrated
are the effects of different magnetic fields applied by different
ones of the coils 60, 65, in order to illustrate how profoundly the
controller 90 can affect and improve plasma ion distribution in the
chamber by changing these magnetic fields. In the following
examples, the spatial distribution of the etch rate across the
wafer surface rather than the plasma ion distribution is measured
directly. The etch rate distribution changes directly with changes
in the plasma ion distribution and therefore changes in one are
reflected by changes in the other.
[0057] FIGS. 4A, 4B, 4C and 4D illustrate the beneficial effects
realized using the inner coil 60 only at a low chamber pressure (30
mT). FIG. 4A illustrates measured etch rate (vertical Z axis) as a
function of location (horizontal X and Y axes) on the surface of
the wafer 20. FIG. 4A thus illustrates the spatial distribution of
the etch rate in the plane of the wafer surface. The center-high
non-uniformity of the etch rate distribution is clearly seen in
FIG. 4A. FIG. 4A corresponds to the case in which no magnetic field
is applied, and therefore illustrates a non-uniform etch rate
distribution that is inherent in the reactor and needs correction.
The etch rate has a standard deviation of 5.7% in this case. In
FIGS. 4A-D and FIGS. 5A-D, the magnetic field strength will be
described as the axial field near the center of the wafer although
it is to be understood that the radial field is the one that works
on the radial distribution of plasma ion density to improve
uniformity. The axial field is chosen in this description because
it is more readily measured. The radial field at the edge of the
wafer typically is about one third the axial field at this
location.
[0058] FIG. 4B illustrates how the etch rate distribution changes
when the inner coil 60 has been energized to generate a magnetic
field of 9 Gauss. The non-uniformity decreases to a standard
deviation of 4.7%.
[0059] In FIG. 4C the magnetic field of the inner coil 60 has been
increased to 18 Gauss, and it can be seen that the peak at the
center has been greatly diminished, with the result that the etch
rate standard deviation across the wafer is reduced to 2.1%.
[0060] In FIG. 4D the magnetic field of the inner coil 60 has been
further increased to 27 Gauss, so that the center high pattern of
FIG. 4A has been nearly inverted to a center low pattern. The
standard deviation of the etch rate across the wafer surface in the
case of FIG. 4D was 5.0%.
[0061] FIGS. 5A, 5B, 5C and 5D illustrate the beneficial effects of
using both the coils 60, 65 at higher chamber pressures (200 mT).
FIG. 5A corresponds to FIG. 4A and depicts the center-high etch
rate non-uniformity of the reactor uncorrected by a magnetic field.
In this case, the standard deviation of the etch rate across the
wafer surface was 5.2%.
[0062] In FIG. 5B, the outer coil 65 has been energized to produce
a 22 Gauss magnetic field, which decreases somewhat the center peak
in the etch rate distribution. In this case, the etch rate standard
deviation has been decreased to 3.5%.
[0063] In FIG. 5C, both coils 60, 65 are energized to produce a 24
Gauss magnetic field. The result seen in FIG. 5C is that the center
peak in the etch rate distribution has been significantly
decreased, while the etch rate near the periphery has increased.
The overall effect is a more uniform etch rate distribution with a
low standard deviation of 3.2%.
[0064] In FIG. 5D, both coils are energized to produce a 40 Guass
magnetic field, producing an over-correction, so that the etch rate
distribution across the wafer surface has been transformed to a
center-low distribution. The etch rate standard deviation in this
latter case has risen slightly (relative to the case of FIG. 5C) to
3.5%.
[0065] Comparing the results obtained in the low pressure tests of
FIGS. 4A-4D with the high pressure tests of FIGS. 5A-5D, it is seen
that the higher chamber pressure requires a much greater magnetic
field to achieve a similar correction to etch rate non-uniform
distribution. For example, at 30 mT an optimum correction was
obtained using only the inner coil 60 at 18 Gauss, whereas at 300
mT a magnetic field of 24 Gauss using both coils 60, 65 was
required to achieve an optimum correction.
[0066] FIG. 6 shows that the magnetic fields of the overhead coils
greatly affect the uniformity of plasma ion density or etch rate
distribution, but do not greatly affect etch rate itself. This is
an advantage because, while it is desirable to improve uniformity
of etch rate distribution, it is preferable to not change the etch
rate chosen for a particular semiconductor process. In FIG. 6, the
diamond symbols depict measured etch rate (left-hand vertical axis)
as a function of magnetic field (horizontal axis), while the square
symbols depict standard deviation (non-uniformity) of the etch rate
(right-hand vertical scale) as a function of the magnetic field.
The change in non-uniformity over the illustrated range is about
one order of magnitude, the change in etch rate is only about
25%.
[0067] The overhead coil inductors 60, 65 of FIGS. 1A, 1B and 1C
may be used with a conventional MERIE reactor. FIGS. 7 and 8
illustrate an case corresponding to FIG. 1A with the additional
feature of four conventional MERIE electromagnets 92, 94, 96, 98
and an MERIE current controller 99. The current controller 99
provides A.C. currents to the respective MERIE electromagnets 92,
94, 96, 98. The respective currents are of the same low frequency
but have their phases offset by 90 degrees so as to produce a
slowly rotating magnetic field within the chamber in the
conventional way.
Controlling Plasma Distribution with the Overhead Coils:
[0068] In accordance with a method of the invention, plasma ion
density distribution across the wafer surface that is inherent in a
particular reactor is tailored in a particular way by selecting a
particular the magnetic field produced by the overhead coils 60,
65. For example, the plasma distribution may be tailored to produce
a more uniform etch rate distribution across the wafer surface.
This tailoring is accomplished, for example, by programming the
controller 90 to select optimum polarities and amplitudes of the
D.C. current flow in the overhead coils. While the present example
concerns a reactor with only two concentric overhead coils (i.e.,
the coils 60 and 65), the method can be carried out with more than
two coils, and may provide more accurate results with a greater
number of overhead coils. The magnetic field is tailored by the
controller 90 to change the plasma ion density distribution across
the wafer surface, which in turn affects the etch rate
distribution.
[0069] A first step is to measure the etch rate distribution across
the wafer surface in the absence of any corrective magnetic field
from the overhead coils 60, 65. A next step is to determine a
change in the plasma ion density distribution that renders the etch
rate distribution more uniform. A final step is to determine a
magnetic field that would produce the desired change in plasma ion
density distribution. Given this magnetic field, the magnitudes and
directions of the currents in the overhead coils 60, 65 necessary
to produce such a field can be computed from well-known static
magnetic field equations.
[0070] We have found a way of computing, from the magnetic field,
pressure exerted by the magnetic field of the overhead coils 60, 65
on the plasma (the so-called "magnetic pressure"). This will be
discussed below. The magnetic pressure on the plasma produces a
change in plasma ion density distribution. This change in plasma
ion density distribution produces a proportional change in etch
rate distribution across the wafer surface, which can be directly
observed. The plasma ion density distribution across the wafer
surface and the etch rate distribution are therefore at least
roughly related by a factor of proportionality.
[0071] Initially, the spatial distribution of the etch rate across
the wafer surface is measured prior to the application of magnetic
fields from the overhead coils 60, 65. From this, a desired change
in etch rate distribution (to achieve a uniform distribution) can
be determined. Next, the spatial distribution of the magnetic field
produced by each overhead coil 60, 65 as a function of location
within the chamber and current flow in the coil is determined
analytically from the geometry of each coil. Then, by applying a
known set of currents to the coils and then measuring the resulting
change in etch rate distribution across the wafer surface, a linear
scale factor can be deduced that relates the vector sum of the
magnetic fields from all the coils at the wafer surface to the
change in etch rate distribution at the wafer surface. (This scale
factor is generally a function of neutral pressure in the plasma
and is operative up to about 500 mT chamber pressure.) Therefore,
given a desired change or correction in etch rate distribution (to
achieve better uniformity), the necessary magnetic fields can be
found (in a manner described later in this specification), and the
corresponding coil currents can be inferred therefrom using the
magnetic field spatial distribution function previously determined
analytically.
[0072] The desired correction to the non-uniformity in etch rate
distribution can be established in a variety of ways. For example,
the 2-dimensional etch rate distribution across the wafer surface
can be subtracted from a uniform or average etch rate to produce a
"difference" distribution. The non-uniformities in etch rate
distribution to be corrected in this method are the result of
various factors in the reactor chamber, including non-uniform
application of the capacitively coupled source power, non-uniform
process gas distribution as well as non-uniform plasma ion density
distribution. In the foregoing method, the non-uniformities are
corrected by changing the plasma ion density distribution by
magnetic pressure.
[0073] The following method can also be employed to establish a
"corrected" plasma distribution that is non-uniform in some desired
way. In this case, the correction to be made is the difference
between the "uncorrected" or ambient plasma ion density
distribution and the desired distribution (that is itself
non-uniform). Thus, the method is useful for making the plasma
density distribution either more uniform or of a particular
selected density distribution pattern that is not necessarily
uniform.
[0074] A series of steps for carrying out the foregoing method will
now be described with reference to FIG. 9.
[0075] The first step (block 910 of FIG. 9) is to analytically
determine, for each one of the overhead coils 60, 65, the
expression for the magnetic field at the wafer surface as a
function of current flow in the coil and radial location on the
wafer surface. Using cylindrical coordinates, this expression may
be written, for the i.sup.th coil, as B.sub.i(r, z=wafer, I.sub.i).
It is determined from the Biot-Savart law in a very
straight-forward manner.
[0076] The next step (block 920 of FIG. 9) is carried out with no
current flowing in the overhead coils 60, 65. In this step, the
spatial distribution of plasma ion density across the wafer surface
is measured. This spatial distribution may be written as n(r,
z=wafer). In this step, the plasma ion density distribution can be
measured indirectly by measuring the etch rate distribution across
the surface of a test wafer. The skilled worker can readily infer
the plasma ion density distribution from the etch rate
distribution.
[0077] Next, in the step of block 930, a correction, c(r), to the
measured plasma ion density spatial distribution function n(r,
z=wafer) measured in the previous step is determined. The
correction c(r) may be defined in any number of appropriate ways.
For example, it may be defined as the maximum value n(r,
z=wafer).sub.max minus n(r, z=wafer). In this way, adding c(r) to
n(r, z=wafer) produces a "corrected" distribution with a uniform
amplitude equal to n(r).sub.max. Of course, the correction function
c(r) may be defined differently to produce a different uniform
amplitude. Or, as briefly noted above, if the desired distribution
is non-uniform, then the correction is the difference between the
desired distribution and n(r, z=wafer).
[0078] The next step (block 940) is to select a "test" current
I.sub.i for each of the overhead coils 60, 65 and apply that
current to the appropriate coil and measure the resulting plasma
ion distribution, which may be written n(r, z=wafer).sub.test. The
change in ion distribution .DELTA.n(r) is obtained by subtracting
the ion distributions measured with and without the magnetic field:
.DELTA.n(r).apprxeq.n(r,z=wafer)-n(r,z=wafer).sub.test
[0079] The next step (block 950) is to compute a scale factor S
relating the pressure gradient exerted by the magnetic field (i.e.,
the magnetic pressure) to the change in ion distribution
.DELTA.n(r). This computation is performed by dividing the magnetic
pressure gradient by .DELTA.n(r). The magnetic pressure gradient of
the magnetic field B(r, z=wafer, I.sub.i) of the i.sup.th coil is
computed individually for each of the coils in accordance with the
magneto-hydrodynamics equation:
.gradient..sub.rP.apprxeq.-.gradient..sub.r[B(r,z=wafer,I.sub.i).sup.2/2.-
mu..sub.0]
[0080] where the subscript r denotes radial component. The results
thus obtained for each coil individually are then summed together.
Therefore, the total magnetic pressure gradient is:
-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.0]}
Therefore, the scale factor S is:
S={-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.0-
]}}/.DELTA.n(r)
[0081] This division operation may be carried out at different
values of r and the results averaged to obtain S in scalar form.
Otherwise, the scale factor S will be a function of r and used in
the appropriate manner.
[0082] The scale factor S found in the step of block 950 is a link
between the coil currents I.sub.i that determine the magnetic
pressure and a resulting change in ion distribution. Specifically,
given a set of coil currents I.sub.i, a corresponding change in ion
distribution n(r) can be computed by multiplying the magnetic
pressure determined from the set of I.sub.i by the scale factor S:
.DELTA.n(r)={-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2-
.mu..sub.0]}}/S
[0083] This fact provides the basis for the following step (block
960) in which a computer (such as the microprocessor 91) uses the
foregoing equation to search for a set of coil currents I.sub.i
that produces the best approximation to previously specified or
desired change in plasma ion density distribution, .DELTA.n(r). In
this case, the desired change is equal to the correction function
c(r) computed in the step of block 930. In other words, the
computer searches for a set of coil currents I.sub.i that satisfies
the following condition:
{-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.0]}-
}=c(r)S
[0084] This search may be carried out by well-known optimization
techniques involving, for example, the method of steepest descents.
Such techniques are readily carried out by the worker skilled in
this field and need not be described here.
[0085] The magnitudes and polarities of the set of coil currents
I.sub.i discovered by the search are then sent to the controller
90, which in turn applies these currents to the respective coils
60, 65.
[0086] FIG. 10 compares magnetic pressure (solid line) with the
measured change in plasma ion distribution (dotted line) as a
function of radial position at the wafer surface. As discussed
above, the magnetic pressure is the gradient of the square of the
magnetic fields of the overhead coils. FIG. 10 indicates that there
is good correlation between magnetic pressure and change in ion
density distribution.
[0087] The application of such a method is illustrated in FIGS.
11-14. FIG. 11 illustrates how non-uniformity or the standard
deviation (vertical axis) in the etch rate spatial distribution at
the wafer surface varied with coil current in one of the overhead
coils. At zero coil current, the standard deviation was about 12%,
and the ion distribution was center-high as shown in FIG. 12.
[0088] The minimum non-uniformity at about 3% was achieved at a
coil current of about 17 amperes. This represents an improvement by
about a factor of four (i.e., 12% to 3% standard deviation in the
etch rate distribution). The actual or measured etch rate
distribution was as shown in FIG. 13A, while the etch rate
distribution predicted using the techniques of FIG. 9 was as shown
in FIG. 13B.
[0089] At the high coil current of 35 amperes, the etch rate
distribution standard deviation was about 14%. The measured etch
rate spatial distribution was as shown in FIG. 14A while the
predicted distribution was as shown in FIG. 14B.
[0090] Referring again to FIG. 13A, the most uniform ion
distribution obtained is certainly not flat and in fact has "bowl"
shape, being concave near the periphery and convex near the center.
It is possible that with a greater number of independent overhead
coils (e.g., three or more), the optimization of currents may be
carried out with greater resolution and better uniformity in
results. Therefore, the invention is not limited to the cases
having only two coils. The invention may be implemented with
varying results using less than or more than two overhead
coils.
[0091] The same method may be applied in order to control plasma
ion density distribution or etch rate distribution at the ceiling
surface. Such an approach may be useful during chamber cleaning
operations, for example. FIG. 15 illustrates a version of the
method of FIG. 9 in which uniformity of the spatial distribution of
ion density (or, etch rate) is optimized. The steps of FIG. 15,
namely blocks 910', 920', 930', 940', 950' and 960' are the same as
the steps of FIG. 9, namely blocks 910, 920, 930, 940, 950 and 960,
except that they are carried out for the ceiling plane rather than
the wafer plane:
[0092] The first step (block 910' of FIG. 15) is to analytically
determine, for each one of the overhead coils 60, 65, the
expression for the magnetic field at the ceiling surface as a
function of current flow in the coil and radial location on the
wafer surface. Using cylindrical coordinates, this expression may
be written, for the i.sup.th coil, as B.sub.i(r, z=ceiling,
I.sub.i). It is determined from simple static magnetic field
equations and is a function not only of coil current I.sub.i and
radial location r on the ceiling surface but also of certain
constants such as the radius of the coil and the distance,
z=ceiling, between the coil and the ceiling interior surface.
[0093] The next step (block 920' of FIG. 15) is carried out with no
current flowing in the overhead coils 60, 65. In this step, the
spatial distribution of plasma ion density across the ceiling
surface is measured. This spatial distribution may be written as
n(r, z=ceiling). In this step, the plasma ion density distribution
can be measured by a conventional probe or other indirect
techniques.
[0094] Next, in the step of block 930', a correction, c'(r), to the
measured plasma ion density spatial distribution function n(r,
z=ceiling) measured in the previous step is determined. (It should
be noted that the prime notation ' is employed here to distinguish
the computations of FIG. 15 from those of FIG. 9 described above,
and does not connote a derivative as used herein.) The correction
c'(r) may be defined in any number of appropriate ways. For
example, it may be defined as the maximum value n(r,
z=ceiling).sub.max minus n(r, z=ceiling). In this way, adding c'(r)
to n(r, z=ceiling) produces a "corrected" distribution with a
uniform amplitude equal to n(r).sub.max. Of course, the correction
function c'(r) may be defined differently to produce a different
uniform amplitude. Also, if a particular non-uniform distribution
is desired, then the correction is the difference between the
uncorrected or ambient plasma distribution n(r, z=ceiling) and the
desired non-uniform distribution. Thus, the method can be employed
to establish either a desired plasma ion distribution having a
particular non-uniform pattern or to establish a uniform plasma ion
density distribution.
[0095] The next step (block 940') is to select a "test" current
I.sub.i for each of the overhead coils 60, 65 and apply that
current to the appropriate coil and measure the resulting plasma
ion distribution, which may be written n(r, z=ceiling).sub.test.
The change in ion distribution .DELTA.n(r) is obtained by
subtracting the ion distributions measured with and without the
magnetic field:
.DELTA.n'(r)=n(r,z=ceiling)-n(r,z=ceiling).sub.test
[0096] The next step (block 950') is to compute a scale factor S'
relating the pressure gradient exerted by the magnetic field (i.e.,
the magnetic pressure) to the change in ion distribution
.DELTA.n'(r). This computation is performed by dividing the
magnetic pressure gradient by .DELTA.n'(r). The magnetic pressure
gradient of the magnetic field B(r, z=ceiling, I.sub.i) of the
i.sup.th coil is computed individually for each of the coils in
accordance with the magneto-hydrodynamics equation:
.gradient..sub.rP=-.gradient..sub.r[B(r,z=ceiling,I.sub.i).sup.2/2.mu..su-
b.0] where the subscript r denotes radial component. The results
thus obtained for each coil individually are then summed together.
Therefore, the total magnetic pressure gradient is:
-.gradient..sub.r{.sub.--.sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.0]}
Therefore, the scale factor S is:
S'={-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.-
0]}}/.DELTA.n'(r)
[0097] The scale factor S' found in the step of block 950' is a
link between the coil currents I.sub.i that determine the magnetic
pressure and a resulting change in ion distribution. Specifically,
given a set of coil currents I.sub.i, a corresponding change in ion
distribution n'(r) can be computed by multiplying the magnetic
pressure determined from the set of I.sub.i by the scale factor S':
.DELTA.n'(r)={-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/-
2.mu..sub.0]}}/S'
[0098] This fact provides the basis for the following step (block
960') in which a computer (such as the microprocessor 91) uses the
foregoing equation to search for a set of coil currents I.sub.i
that produces the best approximation to previously specified or
desired change in plasma ion density distribution, .DELTA.n'(r). In
this case, the desired change is equal to the correction function
c'(r) computed in the step of block 930'. In other words, the
computer searches for a set of coil currents I.sub.i that satisfies
the following condition:
{-.gradient..sub.r{.SIGMA..sub.i[B(r,z=wafer,I.sub.i).sup.2/2.mu..sub.0]}-
}=c'(r)S'
[0099] This search may be carried out by well-known optimization
techniques involving, for example, the method of steepest descents.
Such techniques are readily carried out by the worker skilled in
this field and need not be described here.
[0100] The magnitudes and polarities of the set of coil currents
I.sub.i discovered by the search are then sent to the controller
90, which in turn applies these currents to the respective coils
60, 65.
[0101] With only a single overhead coil, the apparatus can be used
to optimize plasma ion distribution uniformity at either the wafer
or the ceiling but not both simultaneously. With at least two
overhead coils (e.g., the overhead coils 60 and 65), plasma ion
distribution uniformity can be at least approximately optimized at
both the wafer and the ceiling simultaneously.
Steering Plasma with the Overhead Coils:
[0102] We have discovered that the coil currents I.sub.i may be
selected in such a manner as to steer the plasma toward the ceiling
and/or side walls or to steer it to the wafer surface. The coil
currents I.sub.i may also be selected to improve uniformity of
plasma density distribution at the ceiling surface in a manner
similar to the method of FIG. 9. As a result, the plasma may be
concentrated during processing on the wafer, and then during
cleaning may be concentrated on the ceiling and/or side walls. By
thus concentrating the plasma at the ceiling, cleaning time may be
reduced.
[0103] In one example, the plasma was steered to the side wall of
the chamber by the controller 90 applying a current of -17.5
amperes to the inner coil 60 and a current of +12.5 amperes to the
outer coil 65. FIG. 16 illustrates a radial portion of the chamber
interior extending along the horizontal axis from zero radius to
the periphery of the chamber and extending along the vertical axis
from the wafer surface to the ceiling. The small arrows in FIG. 16
indicate the magnitude and direction of the magnetic field at
various locations in the chamber when the plasma is steered to the
side wall of the chamber by the controller 90 applying a current of
-17.5 amperes to the inner coil 60 and a current of +12.5 amperes
to the outer coil 65. FIG. 17 illustrates the corresponding
gradient of the square of the magnetic field at the wafer surface
as a function of radial position.
[0104] In another example, the plasma was steered to the roof of
the chamber by the controller 90 applying a current of -12.5
amperes to the inner coil 60 and a current of +5 amperes to the
outer coil 65. FIG. 18 illustrates a radial portion of the chamber
interior extending along the horizontal axis from zero radius to
the periphery of the chamber and extending along the vertical axis
from the wafer surface to the ceiling. The small arrows in FIG. 18
indicate the magnitude and direction of the magnetic field at
various locations in the chamber when the plasma is steered to the
side wall of the chamber by the controller 90 applying a current of
-12.5 amperes to the inner coil 60 and a current of +5 amperes to
the outer coil 65. FIG. 19 illustrates the corresponding gradient
of the square of the magnetic field at the wafer surface as a
function of radial position.
[0105] In a further example, plasma was steered along field lines
extending from the center of the ceiling to the side wall by the
controller 90 applying a current of -25 amperes to the inner coil
60 and a current of +2.75 to the outer coil 65. FIG. 20 illustrates
a radial portion of the chamber interior extending along the
horizontal axis from zero radius to the periphery of the chamber
and extending along the vertical axis from the wafer surface to the
ceiling. The small arrows in FIG. 20 indicate the magnitude and
direction of the magnetic field at various locations in the chamber
when the plasma is steered to the side wall of the chamber by the
controller 90 applying a current of -25 amperes to the inner coil
60 and a current of +2.5 amperes to the outer coil 65. FIG. 21
illustrates the corresponding gradient of the square of the
magnetic field at the wafer surface as a function of radial
position.
[0106] FIG. 17 shows that a high positive magnetic pressure on the
plasma is exerted near the edge of the chamber when the plasma is
steered to the edge. FIG. 19 shows that a low magnetic pressure on
the plasma is exerted near the edge of the chamber when the plasma
is directed to the edge of the ceiling. FIG. 21 shows that a high
negative pressure is present near the chamber edge when the field
lines extend from the ceiling to the edge.
[0107] Thus, the currents in the overhead coils 60, 65 may be
chosen to direct the plasma to various locations in the chamber
that may require cleaning, such as the ceiling and the side wall.
Or, the plasma may be concentrated more near the wafer. In order to
steer the plasma to either the wafer or the ceiling, or to
apportion the plasma between the wafer and the ceiling in
accordance with some steering ratio SR, a method such as that
illustrated in FIG. 22 may be carried out.
[0108] Referring now to FIG. 22, the first step (block 2210 of FIG.
22) is to define an analytical model of the magnetic field inside
the chamber as a function of all coil currents in the overhead
coils (e.g., the pair of coils 60, 65). This is readily
accomplished using static magnetic field equations by a worker
skilled in this field, and need not be described here. The magnetic
field is the sum of the individual magnetic fields from each of the
coils. Each individual magnetic field is a function of the diameter
of the respective coil, the location of each coil, the current flow
in the coil and the location in the chamber. Thus, the magnetic
field produced by the i.sup.th coil may be written as:
B(x,y,z,I.sub.i) so that the total magnetic field is:
.SIGMA..sub.i{B(x,y,z,I.sub.i)}
[0109] The next step (block 2220) is to select a set of magnetic
fields that fulfill a set of desired process conditions. For
example, to steer plasma to the ceiling, a magnetic field is
selected that produces a magnetic pressure on the plasma that
pushes the plasma toward the ceiling, as illustrated in the example
of FIG. 18. To steer the plasma toward the side wall, a magnetic
field is chosen that produces a magnetic pressure on the plasma
that pushes the plasma toward the periphery, as illustrated in FIG.
16.
[0110] For each magnetic field defined in the step of block 2220
above that fulfills a particular condition, a computer searches the
model defined in the step of block 2210 for a set of coil currents
that produce the desired magnetic field. This is the next step of
block 2230. Each set of currents found in the step of block 2230 is
stored along with the name of the corresponding condition in a
memory location associated with the corresponding process condition
(block 2240 of FIG. 22). Whenever a particular process condition is
selected (e.g., steering the plasma to the ceiling), then the
microprocessor 91 fetches the set of current values from the
corresponding memory location (block 2250) and causes the
corresponding currents to be applied to the appropriate coils
(block 2260).
[0111] FIG. 23 shows how the microprocessor 91 may be programmed to
respond to user inputs. A determination is first made whether the
processing includes etching of the wafer surface (block 2310 and
whether the process includes cleaning (etching) the ceiling (block
2320). If only the wafer is to be etched, then the plasma is
steered to the wafer (block 2330) and the plasma distribution
uniformity at the wafer surface is optimized (block 2350) using the
method of FIG. 9. If the wafer is to etched while the ceiling is to
cleaned at the same time, then the plasma density is apportioned
between the ceiling and the wafer (block 2360) and plasma density
uniformity is optimized at the wafer surface as in FIG. 9 and at
the ceiling as in FIG. 15 (block 2370). If only the ceiling is to
be cleaned, then the plasma is steered to the ceiling (block 2380)
and plasma density uniformity at the ceiling is optimized (block
2390).
Use with VHF Overhead Electrode:
[0112] FIG. 24 illustrates how the inner and outer coils 60, 65 may
be combined with a capacitively coupled reactor that has an
overhead electrode connected to a VHF plasma source power generator
through a fixed tuning stub. Such a reactor is described in U.S.
patent application Ser. No. 10/028,922 filed Dec. 19, 2001 by
Daniel Hoffman et al. entitled "Plasma Reactor with Overhead RF
Electrode Tuned to the Plasma" and assigned to the present
assignee, the disclosure of which is incorporated herein by
reference.
[0113] Referring to FIG. 24, a plasma reactor includes a reactor
chamber 100 with a wafer support 105 at the bottom of the chamber
supporting a semiconductor wafer 110. A process kit may include, in
an exemplary implementation, a conductive or semi-conductive ring
115 supported by a dielectric ring 120 on a grounded chamber body
127. The chamber 100 is bounded at the top by a disc shaped
overhead conductive electrode 125 supported at a gap length above
the wafer 110 on grounded chamber body 127 by a dielectric seal. In
one implementation, the wafer support 105 is movable in the
vertical direction so that the gap length may change. In other
implementations, the gap length may be a fixed predetermined
length. The overhead electrode 125 may be a metal (e.g., aluminum)
which may be covered with a semi-metal material (e.g., Si or SiC)
on its interior surface, or it may be itself a semi-metal material.
An RF generator 150 applies RF power to the electrode 125. RF power
from the generator 150 is coupled through a coaxial cable 162
matched to the generator 150 and into a coaxial stub 135 connected
to the electrode 125. The stub 135 has a characteristic impedance,
has a resonance frequency, and provides an impedance match between
the electrode 125 and the coaxial cable 162 or the output of the RF
power generator 150, as will be more fully described below. The
chamber body is connected to the RF return (RF ground) of the RF
generator 150. The RF path from the overhead electrode 125 to RF
ground is affected by the capacitance of the dielectric seal 120
and by the capacitance of the dielectric seal 130. The wafer
support 105, the wafer 110 and the process kit conductive or
semiconductive ring 115 provide the primary RF return path for RF
power applied to the electrode 125.
[0114] As in the case of FIG. 1A, the inner coil 60 is less than
half the diameter of the outer coil 65 and is in a plane farther
away from the chamber than the outer coil 65. The outer coil 65 is
located at or close to the plane of the top of the electrode 125,
while the inner coil 60 is located well above the electrode 125. As
in the case of FIG. 1A, the D.C. currents in the coils 60, 65 are
controlled by the plasma steering controller 90 governing the
current supplies 70, 75 of the coils 60, 65.
[0115] The capacitance of the overhead electrode assembly 126,
including the electrode 125, the process kit 115, 120 and the
dielectric seal 130 measured with respect to RF return or ground
was, in one exemplary case, 180 pico farads. The electrode assembly
capacitance is affected by the electrode area, the gap length
(distance between wafer support and overhead electrode), and by
factors affecting stray capacitances, especially the dielectric
values of the seal 130 and of the dielectric ring 120, which in
turn are affected by the dielectric constants and thicknesses of
the materials employed. More generally, the capacitance of the
electrode assembly 126 (an unsigned number or scalar) is equal or
nearly equal in magnitude to the negative capacitance of the plasma
(a complex number) at a particular source power frequency, plasma
density and operating pressure, as will be discussed below.
[0116] Many of the factors influencing the foregoing relationship
are in great part predetermined due to the realities of the plasma
process requirements needed to be performed by the reactor, the
size of the wafer, and the requirement that the processing be
carried out uniformly over the wafer. Thus, the plasma capacitance
is a function of the plasma density and the source power frequency,
while the electrode capacitance is a function of the wafer
support-to-electrode gap (height), electrode diameter, and
dielectric values of the insulators of the assembly. Plasma
density, operating pressure, gap, and electrode diameter must
satisfy the requirements of the plasma process to be performed by
the reactor. In particular, the ion density must be within a
certain range. For example, silicon and dielectric plasma etch
processes generally require the plasma ion density to be within the
range of 10.sup.9 to 10.sup.12 ions/cc. The wafer electrode gap
provides an optimum plasma ion distribution uniformity for 8 inch
wafers, for example, if the gap is about 2 inches. The electrode
diameter is preferably at least as great as, if not greater than
the diameter of the wafer. Operating pressures similarly have
practical ranges for typical etch and other plasma processes.
[0117] But it has been found that other factors remain which can be
selected to achieve the above preferred relationship, particularly
choice of source frequency and choice of capacitances for the
overhead electrode assembly 126. Within the foregoing dimensional
constraints imposed on the electrode and the constraints (e.g.,
density range) imposed on the plasma, the electrode capacitance can
be matched to the magnitude of the negative capacitance of the
plasma if the source power frequency is selected to be a VHF
frequency, and if the dielectric values of the insulator components
of electrode assembly 126 are selected properly. Such selection can
achieve a match or near match between source power frequency and
plasma-electrode resonance frequency.
[0118] Accordingly in one exemplary case, for an 8-inch wafer the
overhead electrode diameter is approximately 11 inches, the gap is
about 2 inches, the plasma density and operating pressure is
typical for etch processes as above-stated, the VHF source power
frequency is 210 MHz (although other VHF frequencies could be
equally effective), and the source power frequency, the plasma
electrode resonance frequency and the stub resonance frequency are
all matched or nearly matched.
[0119] More particularly, these three frequencies are slightly
offset from one another, with the source power frequency being 210
MHz, the electrode-plasma resonant frequency being approximately
200 MHz, and the stub frequency being about 220 MHz, in order to
achieve a de-tuning effect which advantageously reduces the system
Q. Such a reduction in system Q renders the reactor performance
less susceptible to changes in conditions inside the chamber, so
that the entire process is much more stable and can be carried out
over a far wider process window.
[0120] A currently preferred mode has chamber and pedestal
diameters suitable for accommodating a 12 inch diameter wafer, a
wafer-to-ceiling gap of about 1.25 inch and an VHF source power
frequency of 162 MHz (rather than the 210 MHz referred to
above).
[0121] The coaxial stub 135 is a specially configured design which
further contributes to the overall system stability, its wide
process window capabilities, as well as many other valuable
advantages. It includes an inner cylindrical conductor 140 and an
outer concentric cylindrical conductor 145. An insulator 147
(denoted by cross-hatching in FIG. 24), having a relative
dielectric constant of 1 for example, fills the space between the
inner and outer conductors 140, 145. The inner and outer conductors
140, 145 may be formed, for example, of nickel-coated aluminum. In
an exemplary case, the outer conductor 145 has a diameter of about
4 inches and the inner conductor 140 has a diameter of about 1.5
inches. The stub characteristic impedance is determined by the
radii of the inner and outer conductors 140, 145 and the dielectric
constant of the insulator 147. The stub 135 of the case described
above has a characteristic impedance of 65.OMEGA.. More generally,
the stub characteristic impedance exceeds the source power output
impedance by about 20%-40% and preferably by about 30%. The stub
135 has an axial length of about 29 inches (a half wavelength at
220 MHz) in order to have a resonance in the vicinity of 220 MHz to
generally match while being slightly offset from the VHF source
power frequency of 210 MHz.
[0122] A tap 160 is provided at a particular point along the axial
length of the stub 135 for applying RF power from the RF generator
150 to the stub 135, as will be discussed below. The RF power
terminal 150b and the RF return terminal 150a of the generator 150
are connected at the tap 160 on the stub 135 to the inner and outer
coaxial stub conductors 140, 145, respectively. These connections
are made via a generator-to-stub coaxial cable 162 having a
characteristic impedance that matches the output impedance of the
generator 150 (typically, 50.OMEGA.) in the well-known manner. A
terminating conductor 165 at the far end 135a of the stub 135
shorts the inner and outer conductors 140, 145 together, so that
the stub 135 is shorted at its far end 135a. At the near end 135b
(the unshorted end) of the stub 135, the outer conductor 145 is
connected to the chamber body via an annular conductive housing or
support 175, while the inner conductor 140 is connected to the
center of electrode 125 via a conductive cylinder or support 176. A
dielectric ring 180 is held between and separates the conductive
cylinder 176 and the electrode 125.
[0123] The inner conductor 140 provides a conduit for utilities
such as process gases and coolant. The principal advantage of this
feature is that, unlike typical plasma reactors, the gas line 170
and the coolant line 173 do not cross large electrical potential
differences. They therefore may be constructed of metal, a less
expensive and more reliable material for such a purpose. The
metallic gas line 170 feeds gas outlets 172 in or adjacent the
overhead electrode 125 while the metallic coolant line 173 feeds
coolant passages or jackets 174 within the overhead electrode
125.
[0124] An active and resonant impedance transformation is thereby
provided by this specially configured stub match between the RF
generator 150, and the overhead electrode assembly 126 and
processing plasma load, minimizing reflected power and providing a
very wide impedance match space accommodating wide changes in load
impedance. Consequently, wide process windows and process
flexibility is provided, along with previously unobtainable
efficiency in use of power, all while minimizing or avoiding the
need for typical impedance match apparatus. As noted above, the
stub resonance frequency is also offset from ideal match to further
enhance overall system Q, system stability and process windows and
multi-process capability.
Matching the Electrode-Plasma Resonance Frequency and the VHF
Source Power Frequency:
[0125] As outlined above, a principal feature is to configure the
overhead electrode assembly 126 for resonance with the plasma at
the electrode-plasma resonant frequency and for the matching (or
the near match of) the source power frequency and the
electrode-plasma frequency. The electrode assembly 126 has a
predominantly capacitive reactance while the plasma reactance is a
complex function of frequency, plasma density and other parameters.
(As will be described below in greater detail, a plasma is analyzed
in terms of a reactance which is a complex function involving
imaginary terms and generally corresponds to a negative
capacitance.) The electrode-plasma resonant frequency is determined
by the reactances of the electrode assembly 126 and of the plasma
(in analogy with the resonant frequency of a capacitor/inductor
resonant circuit being determined by the reactances of the
capacitor and the inductor). Thus the electrode-plasma resonant
frequency may not necessarily be the source power frequency,
depending as it does upon the plasma density. The problem,
therefore, is to find a source power frequency at which the plasma
reactance is such that the electrode-plasma resonant frequency is
equal or nearly equal to the source power frequency, given the
constraints of practical confinement to a particular range of
plasma density and electrode dimensions. The problem is even more
difficult, because the plasma density (which affects the plasma
reactance) and the electrode dimensions (which affect electrode
capacitance) must meet certain process constraints. Specifically,
for dielectric and conductor plasma etch processes, the plasma
density should be within the range of 10.sup.9-10.sup.12 ions/cc,
which is a constraint on the plasma reactance. Moreover, a more
uniform plasma ion density distribution for processing 8-inch
diameter wafers for example, is realized by a wafer-to-electrode
gap or height of about 2 inches and an electrode diameter on the
order of the wafer diameter, or greater, which is a constraint on
the electrode capacitance. On the other hand, a different gap may
be utilized for a 12-inch diameter wafer.
[0126] Accordingly, by matching (or nearly matching) the electrode
capacitance to the magnitude of the negative capacitance of the
plasma, the electrode-plasma resonant frequency and the source
power frequency are at least nearly matched. For the general
conductor and dielectric etch process conditions enumerated above
(i.e., plasma density between 10.sup.9-10.sup.12 ions/cc, a 2-inch
gap and an electrode diameter on the order of roughly 11 inches),
the match is possible if the source power frequency is a VHF
frequency. Other conditions (e.g., different wafer diameters,
different plasma densities, etc.) may dictate a different frequency
range to realize such a match in carrying out this feature of the
reactor. As will be detailed below, under favored plasma processing
conditions for processing 8-inch wafers in several principal
applications including dielectric and metal plasma etching and
chemical vapor deposition, the plasma capacitance in one typical
working example having plasma densities as set forth above was
between -50 and -400 pico farads. In an exemplary case the
capacitance of the overhead electrode assembly 126 was matched to
the magnitude of this negative plasma capacitance by using an
electrode diameter of 11 inches, a gap length (electrode to
pedestal spacing) of approximately 2 inches, choosing a dielectric
material for seal 130 having a dielectric constant of 9, and a
thickness of the order of one inch, and a dielectric material for
the ring 120 having a dielectric constant of 4 and thickness of the
order of 10 mm.
[0127] The combination of electrode assembly 126 and the plasma
resonates at an electrode-plasma resonant frequency that at least
nearly matches the source power frequency applied to the electrode
125, assuming a matching of their capacitances as just described.
We have discovered that for favored etch plasma processing recipes,
environments and plasmas, this electrode-plasma resonant frequency
and the source power frequency can be matched or nearly matched at
VHF frequencies; and that it is highly advantageous that such a
frequency match or near-match be implemented. In an exemplary case,
the electrode-plasma resonance frequency corresponding to the
foregoing values of plasma negative capacitance is approximately
200 MHz, as will be detailed below. The source power frequency is
210 MHz, a near-match in which the source power frequency is offset
slightly above the electrode-plasma resonance frequency in order to
realize other advantages to be discussed below.
[0128] The plasma capacitance is a function of among other things,
plasma electron density. This is related to plasma ion density,
which needs, in order to provide good plasma processing conditions,
to be kept in a range generally 10.sup.9 to 10.sup.12 ions/cc. This
density, together with the source power frequency and other
parameters, determines the plasma negative capacitance, the
selection of which is therefore constrained by the need to optimize
plasma processing conditions, as will be further detailed below.
But the overhead electrode assembly capacitance is affected by many
physical factors, e.g. gap length (spacing between electrode 125
and the wafer); the area of electrode 125; the range of the
dielectric loss tangent for the dielectric seal 130; the choice of
dielectric constant of the dielectric seal 130 between electrode
125 and grounded chamber body 127; the choice of dielectric
constant for the process kit dielectric seal 130; and the thickness
of the dielectric seals 130 and 120 and the thickness and
dielectric constant of the ring 180. This permits some adjustment
of the electrode assembly capacitance through choices made among
these and other physical factors affecting the overhead electrode
capacitance. We have found that the range of this adjustment is
sufficient to achieve the necessary degree of matching of the
overhead electrode assembly capacitance to the magnitude of the
negative plasma capacitance. In particular, the dielectric
materials and dimensions for the seal 130 and ring 120 are chosen
to provide the desired dielectric constants and resulting
dielectric values. Matching the electrode capacitance and the
plasma capacitance can then be achieved despite the fact that some
of the same physical factors influencing electrode capacitance,
particularly gap length, will be dictated or limited by the
following practicalities: the need to handle larger diameter
wafers; to do so with good uniformity of distribution of plasma ion
density over the full diameter of the wafer; and to have good
control of ion density vs. ion energy.
[0129] Given the foregoing range for the plasma capacitance and the
matching overhead electrode capacitance, the electrode-plasma
resonance frequency was approximately 200 MHz for a source power
frequency of 210 MHz.
[0130] A great advantage of choosing the capacitance of the
electrode assembly 126 in this manner, and then matching the
resultant electrode-plasma resonant frequency and the source power
frequency, is that resonance of the electrode and plasma near the
source power frequency provides a wider impedance match and wider
process window, and consequently much greater immunity to changes
in process conditions, and therefore greater performance stability.
The entire processing system is rendered less sensitive to
variations in operating conditions, e.g., shifts in plasma
impedance, and therefore more reliable along with a greater range
of process applicability. As will be discussed later in the
specification, this advantage is further enhanced by the small
offset between the electrode-plasma resonant frequency and the
source power frequency.
[0131] FIG. 25 illustrate how the inner and outer coils 60, 65 may
be combined with a capacitively coupled reactor that has an
overhead electrode connected to a VHF plasma source power generator
through a fixed tuning stub, and has MERIE electromagnets around
its periphery. Such a reactor is described in U.S. patent
application Ser. No. 10/028,922 filed Dec. 19, 2001 by Daniel
Hoffman et al. entitled "Plasma Reactor with Overhead RF Electrode
Tuned to the Plasma" and assigned to the present assignee, the
disclosure of which is incorporated herein by reference.
[0132] Referring to FIG. 25, a VHF capacitively coupled plasma
reactor includes the following elements found in the reactor of
FIG. 1A: a reactor chamber 100 with a wafer support 105 at the
bottom of the chamber supporting a semiconductor wafer 110. A
process kit in the illustrated case consists of a semi-conductive
or conductive ring 115 supported by a dielectric ring 120 on the
grounded chamber body 127. The chamber 100 is bounded at the top by
a disc shaped overhead aluminum electrode 125 supported at a
predetermined gap length above the wafer 110 on grounded chamber
body 127 by a dielectric seal 130. The overhead electrode 125 also
may be a metal (e.g., aluminum) which may be covered with a
semi-metal material (e.g., Si or SiC) on its interior surface, or
it may be itself a semi-metal material. An RF generator 150 applies
RF power to the electrode 125. RF power from the generator 150 is
coupled through a coaxial cable 162 matched to the generator 150
and into a coaxial stub 135 connected to the electrode 125. The
stub 135 has a characteristic impedance, resonance frequency, and
provides an impedance match between the electrode 125 and the
coaxial cable 162/RF power generator 150, as will be more fully
described below. The chamber body is connected to the RF return (RF
ground) of the RF generator 150. The RF path from the overhead
electrode 125 to RF ground is affected by the capacitance of the
process kit dielectric ring 120 and the dielectric seal 130. The
wafer support 105, the wafer 110 and the process kit semiconductive
(or conductive) ring 115 provide the primary RF return path for RF
power applied to the electrode 125.
[0133] As in the case of FIG. 1A, the inner coil 60 is less than
half the diameter of the outer coil 65 and is in a plane farther
away from the chamber than the outer coil 65. The outer coil 65 is
located at or close to the plane of the top of the electrode 125,
while the inner coil 60 is located well above the electrode 125. As
in the case of FIG. 1, the D.C. currents in the coils 60, 65 are
controlled by the plasma steering controller 90 governing the
current supplies 70, 75 of the coils 60, 65.
[0134] The improvement in plasma density distribution uniformity is
achieved by the introduction of a set of MERIE electromagnets 902
spaced equally about the periphery of the wafer support pedestal
and outside of the reactor chamber (like those shown in FIGS. 7 and
8). These MERIE magnets are adapted to produce a magnetic field
that slowly rotates about the axis of symmetry of the cylindrical
chamber generally across the surface of the wafer support pedestal.
In one case this feature is realized by the MERIE magnets 902
having electromagnet windings wound about respective axes tangent
to the circumference of the wafer support pedestal. In this case,
an MERIE current controller 904 controls the individual current to
each MERIE magnet. A circulating magnetic field is generated in the
plane of the workpiece support by the controller 904 providing
individual AC currents to each of the individual magnet windings of
the same frequency but offset in phase by 90 degrees (or by 360
degrees divided by the number of MERIE magnets). In an alternative
case, the feature of a rotating magnetic field is realized by a
support frame 1020 (dashed line) supporting all of the MERIE
magnets that is rotated about the axis of symmetry by a rotor 1025
(dashed line). In this alternative case, the MERIE magnets are
permanent magnets.
[0135] A second array of MERIE magnets 906 (shown in dashed line)
equally spaced about the workpiece or wafer support pedestal but in
a higher plane than the first set of MERIE magnets 902 may be
provided as well. Both sets of magnets lie in respective planes
that are near the plane of the workpiece support.
[0136] The controller 904 applies a low frequency (0.5-10 Hz) AC
current to each of the electromagnets 902, 906, the phases of the
currents applied to neighboring magnets being offset as described
above by 90 degrees. The result is a magnetic field that rotates
about the axis of symmetry of the workpiece support at the low
frequency of the AC current. The magnetic field causes the plasma
to be drawn toward the magnetic field near the workpiece surface
and to circulate with the field. This stirs the plasma so that its
density distribution becomes more uniform. As a result, reactor
performance is significantly improved because more uniform etch
results are obtained across the entire surface of the wafer.
Combination Overhead Electrode and Gas Distribution Plate:
[0137] It is desirable to feed the process gas from the overhead
ceiling to improve uniformity of gas distribution within the
chamber. For this purpose, the overhead electrode 125 in the cases
of FIGS. 24 and 25 can be a gas distribution showerhead, and
therefore has a large number of gas injection ports or small holes
300 in its bottom surface facing the workpiece support 105. In an
exemplary case, the holes 300 were between 0.01 and 0.03 inch in
diameter and their centers were uniformly spaced apart by about 3/8
inch.
[0138] The overhead electrode/gas distribution plate 125
(hereinafter referred to as the gas distribution plate 125) has
improved resistance to arcing. This is due to the introduction of
an arc suppression feature that excludes process gas and/or plasma
from the center of each opening or hole 300. This arc suppressing
feature is a set of center pieces or disks 302 in the centers of
the holes 300 supported at the ends of respective cylindrical
fingers or thin rods 303 as shown in the cross-sectional view of
FIG. 26 and the enlarged cross-sectional view of FIG. 27. Arcing
within a typical gas distribution plate tends to occur near the
center of the gas injection holes. Therefore, placing the center
pieces 302 at the center of each hole 300 prevents process gas from
reaching the center of each hole 300 and therefore reduces the
occurrence of arcing. As shown in the plan view of FIG. 28,
introduction of the center pieces 302 in the holes 300 transforms
the otherwise circular openings or holes 300 into annular
openings.
[0139] Referring to FIG. 29A, the gas distribution plate 125 with
improved arc suppression constitutes a cover 1402 and a base 1404.
The base 1404 is a discoid plate 1406 with the gas injection
openings formed therethrough surrounded by an annular wall 1408
having an interior shoulder 1410. The cover 1402 is also a discoid
plate. The disks 302 are the end sections of the cylindrical
fingers 303 attached to and extending downwardly from the bottom
surface of the cover 1402. The outer edge of the cover 1402 rests
on the shoulder 1410 of the base 1404 to form a gas manifold 1414
(FIG. 26) between the cover 1402 and the base 1404. Process gas
flows into the manifold 1414 from a gas inlet 1416 in the center of
the cover 1402.
[0140] The portions of the gas distribution plate 125 that contact
process gas or plasma in the chamber can be formed of a metal such
as aluminum coated with a semiconductor processing compatible
material such as silicon carbide. In this example, all surfaces of
the gas distribution plate, with the exception of the top surface
of the cover 1402, are covered with a silicon carbide coating 1502
as indicated in the enlarged partial cross-sectional view of FIG.
29B. As shown in FIG. 30, the aluminum top surface of the cover
1402 is in contact with a temperature-controlled member 1520 that
may be water-cooled by water jackets 1522 with coolant circulated
by a heat exchanger 1524, so that the thermally conductive aluminum
material of the gas distribution plate 125 has a controlled
temperature. Alternatively, as shown in FIG. 31, the water jackets
may be within the gas distribution plate 125.
[0141] However, in order for the silicon carbide coating 1502 to
have the same controlled temperature, there must be a thermally
conductive bond between the silicon carbide coating and the
aluminum. Otherwise, the temperature of the silicon carbide coating
could fluctuate uncontrollably. In order to achieve good thermal
conductivity between the aluminum material of the gas distribution
plate 125 and the silicon carbide coating, a polymer bonding layer
1504 is formed between the aluminum gas distribution plate and the
silicon carbide coating 1502, as shown in FIG. 29A. FIG. 29A shows
that the polymer bonding layer 1504 is between the silicon carbide
coating 1502 and the aluminum base 1404. The polymer bonding layer
provides good thermal conductivity between the aluminum and the
silicon carbide coating 1502, so that the temperature of the
coating 1502 is controlled by the heat exchanger 1524.
[0142] FIGS. 32, 33 and 34 illustrate how the gas distribution
plate 125 of FIG. 29A can be modified to provide dual zone gas flow
control. Such a feature can be employed to help correct an etch
rate or deposition rate spatial distribution that is either center
high or center low by selecting a process gas distribution that is
complementary. Specifically, an annular partition or wall 1602
divides the gas manifold 1414 into a center manifold 1414a and an
outer manifold 1414b. In addition to the center gas feed 1416 that
feeds the center manifold 1414a, another gas feed 1418 between the
center and periphery of the gas distribution plate 125 feeds the
outer manifold 1414b. A dual zone controller 1610 apportions gas
flow from a process gas supply 1612 between the inner and outer gas
feeds 1416, 1418. FIG. 35 illustrates one implementation of the
valve 1610 in which an articulating vane 1618 controls the relative
amount of gas flow to the inner and outer manifolds 1414a, 1414b of
the gas distribution plate. An intelligent flow controller 1640
governs the position of the vane 1618. In another implementation
illustrated in FIG. 36, a pair of valves 1651, 1652 perform
individual gas flow control for respective radial zones of the
chamber.
[0143] FIG. 37 illustrates an case in which the gas distribution
plate 125 has three gas flow zones, the manifold 1414 being
separated by inner and outer annular partitions 1604, 1606 into
three manifolds 1414a, 1414b and 1414c. Three respective gas feeds
1416, 1418, 1420 provide gas flow to the respective manifolds
1414a, b, c.
[0144] While various cases have been described above in this
specification as having a pair of overhead coils 60, 65, FIG. 37
shows that there can be more than two overhead coils. In fact, the
case of FIG. 37 is illustrated as having three concentric overhead
coils or coils 60, 64 and 65. By increasing the number of
independently controlled overhead coils, it is felt the resolution
with which processing non-uniformities are corrected is
increased.
[0145] The multiple zone gas distribution plates of FIGS. 34 and 37
enjoy the advantage of flexible control over gas apportionment
between inner and outer processing zones of the workpiece. However,
another way of customizing gas flow is to do so permanently by
providing different gas injection hole sizes at different radii of
the gas distribution plate 125. For example, if the reactor tends
to exhibit a spatial etch rate distribution that is center high,
then less gas would be supplied near the center and more at the
periphery of the chamber by using smaller gas injection holes 300
at the center and larger ones near the periphery. Such a gas
distribution plate is illustrated in plan view in FIG. 38. For a
center low etch distribution, the opposite hole arrangement would
be employed as illustrated in FIG. 39.
Plasma Steering in the Reactor of FIG. 9:
[0146] Plasma steering as described above with reference to FIGS.
11-14 was performed in the case of FIG. 9. A magnetic field
pointing to the side wall was produced by applying a current of -13
amperes to the inner coil 60 and a current of +1.4 amperes to the
outer coil 65. A magnetic field pointing toward the periphery of
the ceiling or electrode 125 was produced by applying a current of
-13 amperes to the inner coil 60 and a current of +5.2 amperes to
the outer coil 65. A dense magnetic field at the side wall was
produced by applying a current of -13 amperes to the inner coil 60
and a current of +9.2 amperes to the outer coil 65. We found that
the etch rate of chamber surfaces during cleaning were improved by
as much as 40% by applying a magnetic field pointing toward the
periphery of the ceiling or electrode 125 in the manner described
above.
Coil Configurations:
[0147] While the foregoing cases have been described with reference
to the inner and outer coils 60, 65, a greater number of coils may
be employed. For example, the case of FIG. 40 has five overhead
coils 4060, 4062, 4064, 4066, 4068, each with its own current
separately controlled by the controller 90. The coils 4060, 4062,
4064, 4066, 4068 may be at the same height above the ceiling 125
(as in FIG. 40) or at different heights. FIG. 41 illustrates an
case in which the overhead coils 60, 65 are at the same height. In
FIG. 41, the windings in each coil 60, 65 are stacked in both
vertical and radial directions. FIGS. 42 and 43 illustrate
different cases in which the coils 60, 65 have windings extending
in the vertical direction and in the radial direction.
[0148] As discussed previously in this specification with reference
to FIG. 1A, magnetic pressure on the plasma for correcting
non-uniform distribution is proportional to the radial component of
the gradient of the square of the magnetic field. Thus, the most
efficient approach is to employ a magnetic field having a large
radial gradient, such as a cusp-shaped magnetic field. As further
discussed above, the greater efficiency of the cusp-shaped magnetic
field reduces the required strength of the magnetic field for a
given amount of magnetic pressure, thereby reducing or eliminating
device damage associated with high magnetic fields. FIG. 44
illustrates an case in which a fully cusp-shaped magnetic field is
produced by a pair of coils 4420, 4440 located above and below the
chamber, respectively. Current flow in the top and bottom coils
4420, 4440 is clockwise and counter-clockwise, respectively. FIG.
45 is a simplified illustration of the magnetic field line pattern
of the fully cusp-shaped magnetic field produced by the pair of
coils 4420, 4440.
[0149] FIG. 46 illustrates an case in which the four electromagnets
4610, 4620, 4630, 4640 of a conventional MERIE reactor 4650 are
employed to generate the fully cusp-shaped magnetic field of FIG.
45. A current controller 4660 controlling the currents in each of
the electromagnets 4610, 4620, 4630, 4640 is programmed to apply
D.C. currents flowing in the same (e.g., clockwise) direction in
all the electromagnets 4610, 4620, 4630, 4640, as indicated by the
arrows in FIG. 46. In this way the D.C. currents in the top
conductors 4610a, 4620a, 4630a, 4640a form a clockwise current
loop, the D.C. currents in the bottom conductors 4610b, 4620b,
4630b, 4640b form a counter-clockwise current loop, while at each
corner of the array the currents in the vertical conductors of
adjacent electromagnets (e.g., the pair of vertical conductors
4620c and 4630d) cancel the magnetic fields of one another at the
wafer surface. The net effect is to produce clockwise and
counter-clockwise current loops at the top and bottom of the
chamber, respectively, analogous to the case of FIG. 44, with the
same resulting fully cusp-shaped magnetic field illustrated in FIG.
45. The reactor of FIG. 46 is operated in any one of three
modes:
[0150] magnetic pressure mode, in which the cusp-shaped field is
produced;
[0151] sine wave mode, in which four sine wave currents are applied
in quadrature to the four electromagnets 4610, 4620, 4630, 4640 to
produce a slowly rotating magnetic field over the wafer
surface;
[0152] configurable magnetic field (CMF) mode, in which the four
electromagnets 4610, 4620, 4630, 4640 are grouped into to opposing
sets of adjacent pairs, one pair having one D.C. current and the
opposite pair having the opposite D.C. current, to produce
generally straight magnetic field lines extending across the wafer
surface in a diagonal direction relative to the orientation of the
four electromagnets 4610, 4620, 4630, 4640. This grouping is
rotated by switching the currents so that the magnetic field
rotates through four diagonal orientations. A time sequence of
these orientations are illustrated in FIGS. 47A, 47B, 47C and
47D.
[0153] In FIG. 47A, the electromagnets 4610, 4620 have a positive
D.C. current flow while the electromagnets 4630, 4640 have negative
D.C. current flow, and the resulting average magnetic field
direction is generally from the upper left corner to the lower
right corner of the drawing. In FIG. 47B, the groupings have been
switched so that the electromagnets 4620, 4630 have the positive
current flow while the electromagnets 4640, 4610 have the negative
current flow, and the average magnetic field has rotated clockwise
by 90 degrees. FIGS. 47C and 47D complete the cycle. The strength
of the magnetic field lines is determined by the magnitude
difference in the positive and negative D.C. currents thus applied,
and may be adjusted by programming the controller 4650 as
desired.
[0154] The method of FIG. 9 may be employed in the CMF mode to
accurately select the D.C. currents of the four electromagnets
4610, 4620, 4630, 4640 to produce the best correction for
non-uniform etch rate or plasma ion density distribution. In
applying the method of FIG. 9 to the CMF mode of FIGS. 47A-D, the
coils of each of the electromagnets or coils 4610, 4620, 4630, 4640
are substituted for the overhead coils 60, 65, and all steps of
FIG. 9 are performed in accordance with that substitution. The only
difference is that the calculation of the magnetic field from each
coil is computed as an average over the four time periods
corresponding to FIGS. 47A-D.
[0155] FIG. 48 illustrates a reactor including a special grating
4810 inserted over the pumping annulus. The grating 4810 is formed
of a semiconductive material such as silicon carbide or of a
conductive material such as aluminum and has openings 4820 for
permitting gas to be evacuated from the chamber through the pumping
annulus. The special grating 4810 excludes plasma from the pumping
annulus, providing needed protection and process control. For this
purpose, the distance across the interior of each opening 4820 in
the radial plane is no greater than twice the plasma sheath
thickness. In this way it very difficult if not impossible for a
plasma to penetrate through the grating 4810. This reduces or
eliminates plasma interaction with chamber surfaces within the
pumping annulus.
[0156] FIGS. 49 and 50 illustrate an integrally formed removable
chamber liner 4910 that incorporates the plasma-confining grating
4810 of FIG. 48. The liner 4910 covers the portions of the chamber
that are radially outside of the region underlying the electrode
125 and overlying the wafer 110. Thus, the liner 4910 includes an
upper horizontal section 4920 covering an outer periphery of the
chamber ceiling, a vertical section 4930 covering the chamber side
wall and a lower horizontal section 4940 that includes the
plasma-confining grating 4810 and covers the pumping annulus as
well as an annular surface adjacent the wafer 110. In one case,
each of the sections 4920, 4930, 4940 are formed together as a
monolithic silicon carbide piece 4950. The liner 4910 further
includes an aluminum base 4960 underlying the lower horizontal
section 4940 of the silicon carbide piece 4950 and is bonded
thereto. The aluminum base 4960 includes a pair of downwardly
extending annular rails 4962, 4964 that are relatively long and
thin and provide good electrical conductivity to grounded
structural elements of the chamber below the wafer support pedestal
105.
[0157] The reactor can have temperature control elements 4972, 4974
in thermal contact with the downwardly extending annular rails
4962, 4964 as well as a temperature control element 4976 in thermal
contact with the vertical side section 4930. Each of the thermal
control elements 4972, 4974, 4976 can include cooling apparatus
including coolant passages and heating apparatus including an
electric heater. It can be desirable to maintain the liner 4910 at
a sufficiently high temperature (e.g., as high as 120 degrees F.)
to minimize or prevent deposition of polymer or fluorocarbon
compounds on interior surfaces of the liner 4910.
[0158] The liner 4910 enhances process stability because it
provides a good ground return path. This is due to the fact that
the electric potential is uniform along the interior surface of the
silicon carbide piece 4950 (including the interior-facing surfaces
of the upper horizontal section 4920, the vertical section 4930 and
the lower horizontal section 4940). As a result, the liner 4910
provides a uniform RF return path at all of its interior-facing
surfaces for power delivered either from the overhead electrode 125
or from the wafer pedestal 105. One advantage is that as plasma
fluctuations move the RF return current distribution to concentrate
at different parts of the interior surface of the liner 4910, the
impedance presented to that current remains fairly constant. This
feature promotes process stability.
[0159] FIG. 51 illustrates a modification of the case of FIG. 7 in
which the overhead solenoids 60, 65 define a square pattern
symmetrical with the square pattern of the MERIE magnets 92, 94,
96, 98, and is particularly suited for uniform processing of a
square semiconductor or dielectric workpiece 4910, such as a
photolithographic mask.
[0160] FIG. 52 illustrates a version of the reactor of FIG. 24 in
which the wafer support pedestal 105 may be moved up and down. In
addition to the two overhead coils 60, 65 for controlling plasma
ion radial distribution, there is a bottom coil 5210 below the
plane of the wafer support pedestal 105. In addition, there is an
outer coil 5220 at the periphery of the chamber. The outer overhead
coil 65 and the bottom coil 5210 can have opposing D.C. currents to
form a full cusp magnetic field within the chamber.
[0161] While the overhead coils 60, 65 have been described in
combination with reactor having an overhead ceiling that serves as
both an overhead source power electrode and as a gas distribution
plate, the ceiling may be of the type that is not a gas
distribution plate, with process gases being introduced in another
conventional fashion (e.g., through the side wall). Moreover, the
coils 60, 65 may be employed in a reactor in which source power is
not capacitively coupled by a ceiling electrode. Also, the
impedance match element for the overhead electrode has been
described as being a fixed element such as a coaxial tuning stub.
However, the impedance match element may be any suitable or
conventional impedance match device such as a conventional dynamic
impedance match circuit.
[0162] While the invention has been described in detail by specific
reference to preferred cases, it is understood that variations and
modifications thereof may be made without departing from the true
spirit and scope of the invention.
* * * * *