U.S. patent application number 11/715971 was filed with the patent office on 2007-08-16 for substrate processing apparatus and method.
Invention is credited to Itsuki Kobata, Masayuki Kumekawa, Yuji Makita, Takayuki Saito, Mitsuhiko Shirakashi, Tsukuru Suzuki, Yasushi Toma, Kaoru Yamada, Hozumi Yasuda.
Application Number | 20070187259 11/715971 |
Document ID | / |
Family ID | 26621999 |
Filed Date | 2007-08-16 |
United States Patent
Application |
20070187259 |
Kind Code |
A1 |
Kobata; Itsuki ; et
al. |
August 16, 2007 |
Substrate processing apparatus and method
Abstract
A substrate processing apparatus can perform an electrolytic
processing, which is different from a common, conventional etching,
to remove (clean off) a conductive material (film) formed on or
adhering to a bevel portion, etc. of a substrate, or process a
peripheral portion of a substrate through an electrochemical
action. The substrate processing apparatus includes: an electrode
section having a plurality of electrodes which are laminated with
insulators being interposed, and having a holding portion which is
to be opposed to a peripheral portion of a substrate; an ion
exchanger disposed in the holding portion of the electrode section;
a liquid supply section for supplying a liquid to the holding
position of the electrode section; and a power source for applying
a voltage to the electrodes of the electrode section so that the
electrodes alternately have different polarities.
Inventors: |
Kobata; Itsuki; (Tokyo,
JP) ; Shirakashi; Mitsuhiko; (Tokyo, JP) ;
Kumekawa; Masayuki; (Tokyo, JP) ; Saito;
Takayuki; (Kanagawa, JP) ; Toma; Yasushi;
(Kanagawa, JP) ; Suzuki; Tsukuru; (Kanagawa,
JP) ; Yamada; Kaoru; (Kanagawa, JP) ; Makita;
Yuji; (Kanagawa, JP) ; Yasuda; Hozumi; (Tokyo,
JP) |
Correspondence
Address: |
WENDEROTH, LIND & PONACK, L.L.P.
2033 K STREET N. W.
SUITE 800
WASHINGTON
DC
20006-1021
US
|
Family ID: |
26621999 |
Appl. No.: |
11/715971 |
Filed: |
March 9, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10485177 |
Jul 6, 2004 |
7208076 |
|
|
PCT/JP02/09255 |
Sep 11, 2002 |
|
|
|
11715971 |
Mar 9, 2007 |
|
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Current U.S.
Class: |
205/674 |
Current CPC
Class: |
C25F 7/00 20130101; C25F
3/00 20130101; H01L 21/6708 20130101 |
Class at
Publication: |
205/674 |
International
Class: |
B23H 5/00 20060101
B23H005/00 |
Foreign Application Data
Date |
Code |
Application Number |
Sep 11, 2001 |
JP |
2001-275112 |
Jan 23, 2002 |
JP |
2002-14132 |
Claims
1-13. (canceled)
14. A substrate processing apparatus for processing a substrate,
comprising: a processing tool facing across a first film and a
second film for removing the first film and the second film
simultaneously from an entire surface of a substrate, wherein the
first film is formed on the surface of the substrate, and the
second film is formed on the first film so as to form a step
between a peripheral portion and an effective device portion of the
substrate by the first film and the second film.
15. The substrate processing apparatus according to claim 14,
wherein said substrate processing apparatus comprises an
electrolytic processing apparatus.
16. The substrate processing apparatus according to claim 15,
wherein said electrolytic processing apparatus comprises: a
processing electrode brought into contact with or close to the
substrate; a feeding electrode for feeding electricity to the
substrate; a fluid supply section for supplying a fluid between the
substrate and one of the processing electrode and feeding
electrode; and a power source for applying a voltage between the
processing electrode and the feeding electrode.
17. The substrate processing apparatus according to claim 16,
further comprises an ion exchanger disposed in at least one of the
space between the substrate and the processing electrode, and the
space between the substrate and the feeding electrode.
18. The substrate processing apparatus according to claim 16,
wherein said fluid is pure water, a liquid having an electric
conductivity of not more than 500 .mu.S/cm, or an electrolysis
solution.
19. The substrate processing apparatus according to claim 18,
wherein said pure water is ultrapure water.
20. The substrate processing apparatus according to claim 14,
wherein said substrate processing apparatus comprises a chemical
etching apparatus.
21. A substrate processing method comprising: preparing a substrate
on which a first film is formed and a second film is formed on the
first film so as to form a step between a peripheral portion and an
effective device portion of the substrate by the first film and the
second film; facing a processing tool across the first film and the
second film; and removing the first film and the second film
simultaneously from the entire surface of the substrate.
22. The substrate processing method according to claim 21, wherein
the removal of the first film and the second film is carried out by
electrolytic processing.
23. The substrate processing method according to claim 22, wherein
said electrolytic processing comprises: bringing a processing
electrode close to a substrate while feeding electricity from a
feeding electrode to the substrate; supplying a fluid between the
substrate and one of the processing electrode and feeding
electrode; and applying a voltage between the processing electrode
and the feeding electrode so as to remove the first film and the
second film simultaneously from the entire surface of the substrate
by a predetermined thickness.
24. The substrate processing method according to 23, further
comprises: disposing an ion exchanger in at least one of the space
between the substrate and the processing electrode, and the space
between the substrate and the feeding electrode.
25. The substrate processing method according to claim 23, wherein
said fluid is pure water, a liquid having an electric conductivity
of not more than 500 .mu.S/cm, or an electrolysis solution.
26. The substrate processing method according to claim 23, wherein
said pure water is ultrapure water.
27. The substrate processing method according to claim 21, wherein
the removal of the first film and the second film is carried out by
chemical etching.
Description
TECHNICAL FIELD
[0001] This invention relates to a substrate processing apparatus
and method, and more particularly to a substrate processing
apparatus and method which can be utilized as a bevel-removal
apparatus for processing a conductive material or removing
impurities adhering to a peripheral portion (bevel portion or edge
portion) of a substrate, such as a semiconductor wafer, or which
can be used for carrying out processing to remove a film formed on
the surface of a substrate by a predetermined thickness.
BACKGROUND ART
[0002] In recent years, instead of using aluminum or aluminum
alloys as a material for forming interconnection circuits on a
substrate such as a semiconductor wafer, there is an eminent
movement towards using copper (Cu) which has a low electric
resistance and high electromigration resistance. Copper
interconnects are generally formed by filling copper into fine
recesses formed in a surface of a substrate. There are known
various techniques for forming such copper interconnects, including
CVD, sputtering, and plating. According to any such technique, a
copper film is formed on the substantially entire surface of a
substrate, followed by removal of unnecessary copper by chemical
mechanical polishing (CMP).
[0003] FIGS. 13A through 13C illustrate, in sequence of process
steps, an example of forming such a substrate W having copper
interconnects. As shown in FIG. 13A, an insulating film 2, such as
a silicon oxide film of SiO.sub.2 or a film of low-k material, is
deposited on a conductive layer 1a in which electronic devices are
formed, which is formed on a semiconductor base 1. A contact hole 3
and a trench 4 for interconnects are formed in the insulating film
2 by the lithography and etching technique. Thereafter, a barrier
layer 5 of TaN or the like is formed on the entire surface, and a
seed layer 7 as an electric supply layer for electroplating is
formed on the barrier layer 5.
[0004] Then, as shown in FIG. 13B, copper plating is performed onto
the surface of the substrate W to fill the contact hole 3 and the
trench 4 with copper and, at the same time, deposit a copper film 6
on the insulating film 2. Thereafter, the copper film 6 and the
barrier layer 5 on the insulating film 2 is removed by chemical
mechanical polishing (CMP) so as to make the surface of the copper
film 6 filled in the contact hole 3 and the trench 4 for
interconnects and the surface of the insulating film 2 lie
substantially on the same plane. An interconnection composed of the
copper film 6 as shown in FIG. 13C is thus formed.
[0005] In this case, the barrier layer 5 is formed so as to cover
the substantially entire surface of the insulating film 2, and the
seed layer 7 is also formed so as to cover the substantially entire
surface of the barrier layer 5. Thus, in some cases, a copper film
that is the seed layer 7 resides on a bevel (outer peripheral
portion) of the substrate W, or copper is deposited on an edge
(outer peripheral portion), which is inward of the bevel of the
substrate W, and remains unpolished. Copper can easily be diffused
into the insulating film in a semiconductor fabrication process
such as annealing, thus deteriorating the electric insulation of
the insulating film, and may cause cross contamination in
subsequent processes of delivering, storing and processing the
substrate. For these reasons, it is necessary that the remaining
deposited copper on the peripheral portion of the substrate should
be completely removed. Therefore, it is suggested that conductive
material such as copper deposited on or adhering to the peripheral
portion of the substrate will be removed by an etching process or
the like.
[0006] As described above, the impurity contamination in the
production of a semiconductor device greatly affects the
reliability of the semiconductor device. Accordingly, with respect
to a substrate in which a film has been formed e.g. by plating over
the entire surface e.g. for the formation of semiconductor
interconnects or contacts, the substrate is usually subjected to a
process for removing the film on a peripheral portion of the
substrate in order to prevent a later contamination of a processing
device which would be caused by contact between the film and a
substrate transport device. Such a film removal processing has
generally been carried out by supplying an etching liquid only to a
to-be-removed region of a substrate to effect removal of a film
only in the to-be-removed region.
[0007] Components in various types of equipment have recently
become finer and have required higher accuracy. As sub-micro
manufacturing technology has commonly been used, the properties of
materials are largely influenced by the processing method. Under
these circumstances, in such a conventional machining method that a
desired portion in a workpiece is physically destroyed and removed
from the surface thereof by a tool, a large number of defects may
be produced to deteriorate the properties of the workpiece.
Therefore, it becomes important to perform processing without
deteriorating the properties of the materials.
[0008] Some processing methods, such as chemical polishing,
electrolytic processing, and electrolytic polishing, have been
developed in order to solve this problem. In contrast with the
conventional physical processing, these methods perform removal
processing or the like through chemical dissolution reaction.
[0009] Therefore, these methods do not suffer from defects, such as
formation of an altered layer and dislocation, due to plastic
deformation, so that processing can be performed without
deteriorating the properties of the materials.
[0010] When removing a conductive material, such as copper, by e.g.
a common etching processing technique conventionally employed, a
chemical liquid, selected from a variety of kinds, is used. This
requires an adequate post-cleaning and, in addition, imposes a
considerable load up on waste liquid treatment. Also in this
connection, it is to be pointed out that though a low-k material,
which has a low dielectric constant, is expected to be
predominantly used in the future as a material for the insulating
film of a semiconductor substrate, the low-k material has a low
mechanical strength and therefore is hard to endure the stress
applied during CMP processing.
[0011] Further, with such an etching processing (film-removing
processing), control of an etching width and of an edge
configuration cannot be made with ease. In addition, with the
progress towards multi-layered interconnects, there is the problem
of an increased number of process steps becoming necessary.
[0012] A method has been reported which performs CMP processing
simultaneously with plating, viz. chemical mechanical electrolytic
polishing. According to this method, the mechanical processing is
carried out to the growing surface of a plating film, causing the
problem of denaturing of the resulting film.
[0013] In the case of the above-mentioned conventional electrolytic
processing or electrolytic polishing, the process proceeds through
an electrochemical interaction between a workpiece and an
electrolytic solution (aqueous solution of NaCl, NaNO.sub.3, HF,
HCl, HNO.sub.3, NaOH, etc.) Since an electrolytic solution
containing such an electrolyte must be used, contamination of a
workpiece with the electrolyte cannot be avoided.
SUMMARY OF THE INVENTION
[0014] The present invention has been made in view of the above
situation in the related art. It is therefore a first object of the
present invention to provide a substrate processing apparatus and
method that can perform an electrolytic processing through an
electrochemical action, which is different from a common,
conventional etching, to remove (clean off) a conductive material
(film) formed on or adhering to a bevel portion, etc. of a
substrate.
[0015] It is a second object of the present invention to provide a
substrate processing apparatus and method that can simplify removal
of a film in a peripheral portion of a substrate and can securely
remove the film.
[0016] In order to achieve the above objects, the present invention
provides a substrate processing apparatus comprising: an electrode
section having a plurality of electrodes which are laminated with
insulators being interposed, and having a holding portion which is
to be opposed to a peripheral portion of a substrate; a liquid
supply section for supplying a liquid to the holding position of
the electrode section; and a power source for applying a voltage to
the electrodes of the electrode section so that the electrodes
alternately have different polarities.
[0017] An ion exchanger may be disposed in the holding portion of
the electrode section.
[0018] FIG. 1 illustrates the principle of electrolytic processing
effected in the above electrolytic processing apparatus. FIG. 1
shows the ionic state in the electrolytic processing apparatus when
an ion exchanger 12a mounted on a processing electrode 14 (e.g.
cathode) and an ion exchanger 12b mounted on a feeding electrode 16
(e.g. anode) are brought into contact with or close to a surface of
a workpiece (substrate) 10, while a voltage is applied via a power
source 17 between the processing electrode 14 and the feeding
electrode 16, and a liquid 18, e.g. ultrapure water, is supplied
from a liquid supply section 19 between the processing electrode
14, the feeding electrode 16 and the workpiece 10.
[0019] When a liquid like ultrapure water that in itself has a
large resistivity is used, it is preferred to bring the ion
exchanger 12a into contact with the surface of the workpiece 10.
This can lower the electric resistance, lower the requisite voltage
and reduce the power consumption. The "contact" in the present
electrolytic processing does not imply "press" for giving a
physical energy (stress) to a workpiece as in CMP.
[0020] Water molecules 20 in the liquid 18 such as ultrapure water
are dissociated using the ion exchangers 12a, 12b into hydroxide
ions 22 and hydrogen ions 24 effectively. The hydroxide ions 22
thus produced, for example, are carried, by the electric field
between the workpiece 10 and the processing electrode 14 and by the
flow of the liquid 18, to the surface of the workpiece 10 opposite
to the processing electrode 14 whereby the density of the hydroxide
ions 22 in the vicinity of the workpiece 10 is enhanced, and the
hydroxide ions 22 react with the atoms 10a of the workpiece 10. The
reaction product 26 produced by this reaction is removed from the
workpiece 10 by the flow of the liquid 18 along the surface of the
workpiece 10. Removal processing of the surface of the workpiece 10
is thus effected.
[0021] As will be appreciated from the above, the removal
processing according to the present invention is effected purely by
the electrochemical interaction between the reactant ions and the
workpiece. The present electrolytic processing thus clearly differs
in the processing principle from CMP according to which processing
is effected by the combination of the physical interaction between
an abrasive and a workpiece, and the chemical interaction between a
chemical species in a polishing liquid and the workpiece.
[0022] The ion exchanger may be a laminate of a plurality of
ion-exchange materials.
[0023] By making the ion exchanger a multi-layer structure
consisting of laminated layers of ion-exchange materials, such as
ion-exchange fibers and an ion-exchange membrane, it is possible to
increase the total ion exchange capacity whereby formation of an
oxide, for example in removal (polishing) processing of copper, can
be restrained to thereby avoid the oxide adversely affecting the
processing rate. Further, by using a soft ion-exchange material,
such as a porous membrane or a woven fabric, for the outermost
layer of a multi-layer ion exchanger, the occurrence of an abnormal
processing, such as rise-up or pealing of a copper film after
processing, can be suppressed.
[0024] The ion exchanger may have water-absorbing properties. This
allows a liquid such as ultrapure water to flow within the ion
exchanger.
[0025] The ion exchanger may have one or both of an anion-exchange
ability and a cation-exchange ability. An ion exchanger having an
anion-exchange ability and an ion exchanger having a
cation-exchange ability can be used selectively according to a
substrate. The use of an ion-exchanger having both of
anion-exchange and cation-exchange abilities can broaden the range
of processible materials and, in addition, can prevent the
formation of impurities due to the polarity.
[0026] The liquid may be pure water, a liquid having an electric
conductivity (referring herein to that at 25.degree. C., 1 atm) of
not more than 500 .mu.S/cm, or an electrolytic solution.
[0027] Pure water is a water having an electric conductivity of not
more than 10 .mu.S/cm. The use of pure water in electrolytic
processing enables a clean processing without leaving impurities on
the processed surface of a workpiece, whereby a cleaning step after
the electrolytic processing can be simplified. Specifically, one or
two-stages of cleaning may suffice after the electrolytic
processing.
[0028] It is also possible to use a liquid obtained by adding an
additive, such as a surfactant, to pure water or ultrapure water,
and having an electric conductivity of not more than 500 .mu.S/cm,
preferably not more than 50 .mu.S/cm, more preferably not more than
0.1 .mu.S/cm (resistivity of not less than 10 M.OMEGA.cm). Such a
low electric conductive liquid can form a layer, which functions to
inhibit ion migration evenly, at the interface between a workpiece
(e.g. substrate) and an ion exchanger, thereby moderating
concentration of ion exchange (metal dissolution) to enhance the
flatness of the processed surface.
[0029] The additive plays a role to prevent local concentration of
ions (e.g. hydroxide ions (OH.sup.-)). It is noted in this regard
that "an equal processing (removal) rate at various points over the
entire processing surface" is an important factor for providing a
flat processed surface. When a single electrochemical removal
reaction is in progress, a local difference in the processing
removal rate may be produced by a local concentration of reactant
ions. The local concentration of reactant ions may be caused mainly
by a deviation in the electric field intensity between the
processing electrode and the feeding electrode, and a deviation in
the distribution of reactant ions in the vicinity of the surface of
a workpiece. The local concentration of reactant ions can be
prevented by allowing the additive, which plays a role to prevent
local concentration of ions (e.g. hydroxide ions), to exist between
a workpiece and an ion exchanger.
[0030] An aqueous solution of a neutral salt such as NaCl or
Na.sub.2SO.sub.4, an acid such as HCl or H.sub.2SO.sub.4, or an
alkali such as ammonia may be used as the electrolytic solution,
and may be properly selected according to the properties of a
workpiece. When using electrolytic solution, it is better to use
the low concentration electrolytic solution which electric
conductivity is not more than 500 .mu.S/cm, to avoid much
contamination.
[0031] Ultra pure water is preferably used as the liquid. By
"ultrapure water" is herein meant a water having an electric
conductivity of not more than 0.1 .mu.S/cm. The use of ultrapure
water enables a cleaner processing without leaving impurities on
the processed surface of a workpiece.
[0032] The electrode section may be disposed in a tilted state
relative to a horizontal plane so that the substrate can roll over
the ion exchanger disposed in the holding portion of the electrode
section and move along the electrode section.
[0033] The present invention also provides a substrate processing
method comprising: opposing a peripheral portion of a substrate to
a holding portion provided in an electrode section having a
plurality of electrodes which are laminated with insulators being
interposed; supplying a liquid to the holding portion of the
electrode section; and applying a voltage to the electrodes of the
electrode section so that the electrodes alternately have different
polarities.
[0034] An ion exchanger may be disposed in the holding portion of
the electrode section.
[0035] The present invention also provides another substrate
processing apparatus for processing a substrate, comprising: a
processing tool facing across a first film and a second film for
removing the first film and the second film simultaneously from an
entire surface of a substrate, wherein the first film is formed on
the surface of the substrate, and the second film is formed on the
first film so as to form a step between a peripheral portion and an
effective device portion of the substrate by the first film and the
second film. The predetermined thickness may be at least the
thickness of the film 7 in the peripheral portion 532 (see FIGS. 7A
and 7B).
[0036] The substrate processing apparatus can perform in a simple
manner an effective removal processing of a substrate W, for
example, a substrate W as shown in FIGS. 7A and 7B, in which a film
is formed in the substrate surface WA such that the film has a step
between the peripheral portion 532 and the effective device portion
533 of the substrate, thereby removing the film 6, 7 in the
substrate surface WA by a predetermined thickness t over the entire
surface simultaneously, and completely removing the film 7 in the
peripheral portion 532 while leaving the film 6 in the effective
device portion 533. Preferably, the substrate processing apparatus
can remove the film 6, 7 in the substrate surface WA simultaneously
over the entire surface by a predetermined uniform thickness.
[0037] The substrate processing apparatus may comprise an
electrolytic processing apparatus. Such a substrate processing
apparatus, because of an electrolytic processing apparatus, can
produce a high-quality substrate having a high flatness without
defects in the substrate surface, such as a denatured layer and
transformation, caused by plastic deformation.
[0038] According to one embodiment, as shown in FIG. 9, the
substrate processing apparatus as an electrolytic processing
apparatus comprises: a processing electrode 218 brought into
contact with or close to a substrate W; a feeding electrode 236 for
feeding electricity to the substrate W; an ion exchanger 235
disposed in at least one of the space between the substrate W and
the processing electrode 218, and the space between the substrate W
and the feeding electrode 236; a fluid supply section 229, 217,
219, 220, 228 for supplying a fluid 202 between the substrate W and
the ion exchanger 235; and a power source 223 for applying a
voltage between the processing electrode 218 and the feeding
electrode 236.
[0039] According to this substrate processing apparatus, with the
provision of the processing electrode 218, the feeding electrode
236, the ion exchanger 235 and the power source 223, electrolytic
processing of a substrate W proceeds through the electrochemical
action described below.
[0040] When the fluid 202 is a liquid, for example pure water,
water is dissociated into hydroxide ions and hydrogen ions by the
application of a voltage between the processing electrode 218 and
the feeding electrode 236. The dissociation of water is promoted by
the ion exchanger 235. By the electric field between the substrate
W and the processing electrode 218, and by the flow of pure water
202 supplied between the substrate W and the ion exchanger 235, the
hydroxide ions produced by the water dissociation are moved to the
surface WA, facing the processing electrode 218, of the substrate
W. The density of hydroxide ions thus increases in the vicinity of
the substrate surface WA, whereby reaction between the atoms of the
surface WA and hydroxide ions occurs. The reaction product of this
reaction dissolves in pure water 202 and is removed from the
substrate W, while some of the product accumulates in the ion
exchanger 235. Removal processing of the surface WA of the
substrate W is thus effected. Since the surface WA facing the
processing electrode 218 is processed, by moving the processing
electrode 218 along the surface WA of the substrate W, the surface
WA can be removed by a desired thickness or processed into a
desired surface configuration.
[0041] The ion exchanger may be of a single-layer structure or of a
multi-layer laminated structure. The use of a multi-layer laminated
structure makes it possible to use a thin membrane as one ion
exchanger and increases the total ion exchange capacity. The kinds
or properties of ion exchangers may be varied for every layer. For
example, the hardness may be varied for every layer.
[0042] The power source may apply a predetermined voltage or a
controlled voltage that allows a constant electric current to flow.
This facilitates control of the processing amount (processing
thickness) or the end point of processing. Typically, the object to
be processed is a film formed in the substrate surface WA.
[0043] According to another embodiment, as shown in FIG. 6, the
substrate processing apparatus as an electrolytic processing
apparatus comprises: a processing electrode 518 brought into
contact with or close to a substrate W; a feeding electrode for
feeding electricity to the substrate W; a fluid supply section 529,
517, 519, 520, 528 for supplying a fluid 502 to at least one of the
space between the substrate W and the processing electrode 518, and
the space between the substrate W and the feeding electrode; and a
power source 523 for applying a voltage between the processing
electrode 518 and the feeding electrode (substrate W, connected to
the power source 523).
[0044] According to this substrate processing apparatus, with the
provision of the processing electrode 518, the feeding electrode
(substrate W) and the power source 523, electrolytic processing of
a substrate W proceeds through the electrochemical action as
described below.
[0045] When the fluid 502 is a liquid, for example pure water,
water is dissociated into hydroxide ions and hydrogen ions by the
application of a voltage between the processing electrode 518 and
the feeding electrode (substrate W). By the electric field between
the substrate W and the processing electrode 518 and by the flow of
pure water 502 supplied between the substrate W and the processing
electrode 518 and/or between the substrate W and the feeding
electrode, the hydroxide ions produced by the water dissociation
are moved to the surface WA, facing the processing electrode 518,
of the substrate W. The density of hydroxide ions thus increases in
the vicinity of the substrate surface WA, whereby reaction between
the atoms of the surface WA and hydroxide ions occurs. The reaction
product of this reaction dissolves in pure water 502 and is removed
from the substrate W. Removal processing of the surface WA of the
substrate W is thus effected. Since the surface WA facing the
processing electrode 518 is processed, by relatively moving the
processing electrode 518 along the surface WA of the substrate W,
the surface WA can be removed by a desired thickness or processed
into a desired surface configuration.
[0046] In the substrate processing apparatus of the present
invention, for example the substrate processing apparatus shown in
FIG. 9, the use of an electrolysis solution as a fluid 202 can
enhance the processing rate. When a liquid having an electric
conductivity of not more than 500 .mu.S/cm is used as the fluid
202, through the processing rate may be lowered as compared to the
use of an electrolysis solution, processing can be performed with
the liquid containing less impurity. The use of pure water enables
a cleaner processing. Even when using pure water or a liquid having
an electric conductivity of not more than 500 .mu.S/cm, the
processing rate can be maintained at a high level by the provision
of the ion exchanger 235.
[0047] According to still another embodiment of the present
invention, as shown in FIG. 8, the substrate processing apparatus
as an electrolytic processing apparatus comprises: a processing
electrode 118 brought into contact with or close to a substrate W;
a feeding electrode (substrates, connected to the power source 123)
for feeding electricity to the substrate W; a fluid supply section
for supplying a fluid 102 which is pure water or a liquid having an
electric conductivity of not more than 500 .mu.S/cm; a power source
123 for applying a voltage between the processing electrode 118 and
the feeding electrode (substrate W); and an ion exchanger 135.
[0048] According to this substrate processing apparatus, with the
provision of the processing electrode 118, the feeding electrode
(substrate W), the ion exchanger 135 and the power source 123,
electrolytic processing of a substrate W proceeds through the
electrochemical action described below.
[0049] Water is dissociated into hydroxide ions and hydrogen ions
by the application of a voltage between the processing electrode
118 and the feeding electrode (substrate W). The dissociation of
water is promoted by the ion exchanger 135. By the electric field
between the substrate W and the processing electrode 118 and by the
flow of pure water 102 or the liquid 102 supplied, the hydroxide
ions produced by the water dissociation a removed to the surface
WA, facing the processing electrode 118, of the substrate W. The
density of hydroxide ions thus increases in the vicinity of the
substrate surface WA, whereby reaction between the atoms of the
surface WA and hydroxide ions occurs. The reaction product of this
reaction dissolves in pure water 102 or in the liquid 102 and is
removed from the substrate W, while some of the product accumulates
in the ion exchanger 135. Removal processing of the surface WA of
the substrate W is thus effected. Since the surface WA facing the
processing electrode 118 is processed, by moving the processing
electrode 118 along the surface WA of the substrate W, the surface
WA can be removed by a desired thickness or processed into a
desired surface configuration.
[0050] The substrate processing apparatus may comprise a chemical
etching apparatus. Such a substrate processing apparatus, because
of a chemical etching apparatus, can produce a high-quality
substrate having a high flatness without defects in the substrate
surface, such as a denatured layer and transformation, caused by
plastic deformation.
[0051] The present invention also provides a substrate processing
method as illustrated in FIGS. 7A and 7B, comprising: forming a
film 6, 7 on a substrate W such that the film has a step between
the peripheral portion 532 and the effective device portion 533 of
the substrate W; and removing the film 6, 7 in the substrate
surface WA by a predetermined thickness over the entire surface
simultaneously.
[0052] The step of forming the film such that the film has a step
between the peripheral portion 532 and the effective device portion
533 typically consists of: a first stage of forming a first film 7
over the entire substrate surface WA; and a second stage of forming
a second film 6 in the effective device portion 533 of the
substrate. The step of removing the film 6, 7 in the substrate
surface WA by a predetermined thickness over the entire surface
simultaneously may be carried out in such a manner that the film 6,
7 in the substrate surface WA is processed at a uniform processing
rate over the entire surface WA until the first film 7 in the
peripheral portion 532 is completely removed. The processing may be
terminated at the time when the film 7 is completely removed. Since
the film has a step between the peripheral portion 532 and the
effective device portion 533, even when the first film 7 in the
peripheral portion 532 is completely removed, the second film 6 in
the effective device portion 533 still remains. The film 7 in the
peripheral portion 532 can thus be selectively removed. The
processing may be either by electrolytic processing or by chemical
etching processing.
[0053] According to a preferred embodiment, the substrate
processing method as an electrolytic processing method comprises:
forming a first film on the surface of a substrate, and a second
film on the first film so as to form a step between a peripheral
portion and an effective device portion of the substrate by the
first film and the second film; bringing a processing electrode
close to a substrate while feeding electricity from a feeding
electrode to the substrate; disposing an ion exchanger in at least
one of the space between the substrate and the processing
electrode, and the space between the substrate and the feeding
electrode; supplying a fluid between the substrate and the ion
exchanger; and applying a voltage between the processing electrode
and the feeding electrode so as to remove the first film and the
second film simultaneously from the entire surface of the substrate
by a predetermined thickness.
[0054] The above and other objects, features, and advantages of the
present invention will be apparent from the following description
when taken in conjunction with the accompanying drawings which
illustrate preferred embodiments of the present invention by way of
example.
BRIEF DESCRIPTION OF DRAWINGS
[0055] FIG. 1 is a diagram illustrating the principle of
electrolytic processing according to the present invention;
[0056] FIG. 2 is a schematic view of an electrolytic processing
apparatus (substrate processing apparatus) of one embodiment of the
present invention, which is utilized as a bevel-removal
apparatus;
[0057] FIG. 3 is a perspective view of the electrode section of
FIG. 2;
[0058] FIG. 4 is an enlarged sectional view of the electrode of the
electrode section of FIG. 2;
[0059] FIG. 5 is a schematic sectional view of an electrolytic
processing apparatus (substrate processing apparatus), utilized as
a bevel-removal apparatus, according to another embodiment of the
present invention;
[0060] FIG. 6 is a schematic sectional view of an electrolytic
processing apparatus (substrate processing apparatus) according to
still another embodiment of the present invention;
[0061] FIGS. 7A and 7B are cross-sectional views illustrating a
configurational change of a substrate when it is processed by the
electrolytic processing apparatus of FIG. 6;
[0062] FIG. 8 is a schematic sectional view of an electrolytic
processing apparatus (substrate processing apparatus) according to
still another embodiment of the present invention;
[0063] FIG. 9 is a schematic sectional view of an electrolytic
processing apparatus (substrate processing apparatus) according to
still another embodiment of the present invention;
[0064] FIG. 10 is a bottom plan view illustrating the arrangement
of the processing electrode and the feeding electrode of the
electrolytic processing apparatus of FIG. 9;
[0065] FIG. 11 is a schematic sectional view of a chemical etching
apparatus (substrate processing apparatus) according to an
embodiment of the present invention;
[0066] FIG. 12 is a plan view showing a substrate processing system
which is provided with a substrate processing apparatus according
to the present invention; and
[0067] FIGS. 13A through 13C are diagrams illustrating, in sequence
of process steps, the formation of copper interconnects.
DETAILED DESCRIPTION OF THE INVENTION
[0068] Preferred embodiments of the present invention will now be
described in detail with reference to the drawings. Though the
below-described embodiments refer to substrate processing
apparatuses which use a substrate as a workpiece to be processed
and remove (polish) copper formed on or adhering to a peripheral
portion (bevel portion or edge portion) of the substrate, the
present invention is of course applicable to processing apparatuses
which process a workpiece other than a substrate.
[0069] FIGS. 2 through 4 show an electrolytic processing apparatus
(substrate processing apparatus) according to an embodiment of the
present invention, which is utilized as a bevel-removal apparatus.
The bevel-removal apparatus (electrolytic processing apparatus)
includes a pair of rotatable roller chucks 30 for vertically
holding a substrate W, which has been dropped in from above, and an
electrode section 32 provided below the roller chucks 30.
[0070] The roller chucks 30 each have a V-shaped groove in the
circumferential end surface and hold the substrate W by bringing a
peripheral portion of the substrate into engagement with the
groove. Further, the roller chucks 30 are directly connected to a
motor (not shown), and are allowed to rotate synchronously in the
same direction by the actuation of the motor, thereby rotating the
substrate W.
[0071] The electrode section 32 has a plurality of electrodes 36
that are connected in series with insulators 34 being interposed.
The cathode and the anode of a power source 40 are alternately
connected to the electrodes 36. According to this embodiment, the
electrodes 36 connected to the cathode of the power source 40
become processing electrodes 42, and the electrodes 36 connected to
the anode of the power source 40 become feeding electrodes 44. This
applies to processing of e.g. copper, because electrolytic
processing of copper proceeds on the cathode side. Depending upon a
material to be processed, the cathode side can be a feeding
electrode and the anode side can be a processing electrode. More
specifically, when the material to be processed is copper,
molybdenum, iron or the like, electrolytic processing proceeds on
the cathode side, and therefore the electrodes 36 connected to the
cathode of the power source 40 should be the processing electrodes
42 and the electrodes 36 connected to the anode of the power source
40 should be the feeding electrodes 44. In the case of aluminum,
silicon or the like, on the other hand, electrolytic processing
proceeds on the anode side. Accordingly, the electrodes connected
to the anode of the power source should be the processing
electrodes and the electrodes connected to the cathode should be
the feeding electrodes.
[0072] Further, in the upper surface of the electrode section 32,
there is provided a groove 38 as a holding portion, which extends
linearly over the full length in the longitudinal direction of the
electrode section 32, and which may have a U-shape section in
conformity with the sectional configuration of the periphery of the
substrate W. The entire surface of the groove (holding portion) 38
is covered with an ion exchanger 48 that is bent in the U-shape
conforming to the surface of the groove 38.
[0073] The electrode section 32 is located in such a position that
when the substrate W is held by the roller chucks 30, the lowermost
surface of the substrate W is close to or in slight contact with
the surface of the ion exchanger 48 disposed in the groove 38 of
the electrode section 32. The groove 38 extends in such a direction
that the substrate W transverses the lamination of electrodes
36.
[0074] Though this embodiment shows the provision in the electrode
section 32 of the groove 38 which extends linearly across the
insulators 34 and the electrodes 36, it is also possible to provide
a groove which extends in an arc in conformity with the peripheral
shape of the substrate W, so that the ion exchanger disposed in the
groove can be closed to or in slight contact with the peripheral
end surface of the substrate W over the full length in the
longitudinal direction of the ion exchanger.
[0075] The "bevel portion" of a substrate (e.g. semiconductor
wafer) generally refers to a several mm-width region from the
peripheral end of the substrate. When carrying out removing of a
conductive film in such a portion, the portion needs to be "in a
covered state". To meet this requirement, the groove 38 as a
holding portion is provided in the electrode section 32, according
to this embodiment. As an alternative, it is possible to form a
groove by disposing two flat plates so that they face each other.
It is also possible to make an electrode portion of a flat plate,
and press the end of a substrate (e.g. substrate wafer) against the
electrode portion by utilizing elasticity of an ion exchanger
mounted on the flat plate-shaped electrode section.
[0076] The ion exchanger 48 may be a nonwoven fabric which has an
anion-exchange ability or a cation-exchange ability. A cation
exchanger preferably carries a strongly acidic cation-exchange
group (e.g. sulfonic acid group); however, a cation exchanger
carrying a weakly acidic cation-exchange group (e.g. carboxyl
group) may also be used. Though an anion exchanger preferably
carries a strongly basic anion-exchange group (e.g. quaternary
ammonium group), an anion exchanger carrying a weakly basic
anion-exchange group (e.g. tertiary or lower amino group) may also
be used.
[0077] The nonwoven fabric carrying a strongly basic anion-exchange
group can be prepared by, for example, the following method: A
polyolefin nonwoven fabric having a fiber diameter of 20-50 .mu.m
and a porosity of about 90% is subjected to the so-called radiation
graft polymerization, comprising .gamma.-ray irradiation onto the
nonwoven fabric and the subsequent graft polymerization, thereby
introducing graft chains; and the graft chains thus introduced are
then aminated to introduce quaternary ammonium groups thereinto.
The capacity of the ion-exchange groups introduced can be
determined by the amount of the graft chains introduced. The graft
polymerization may be conducted by the use of a monomer such as
acrylic acid, styrene, glicidyl methacrylate, sodium
styrenesulfonate or chloromethylstyrene. The amount of the graft
chains can be controlled by adjusting the monomer concentration,
the reaction temperature and the reaction time. Thus, the degree of
grafting, i.e. the ratio of the weight of the nonwoven fabric after
graft polymerization to the weight of the nonwoven fabric before
graft polymerization, can be made 500% at its maximum.
Consequently, the capacity of the ion-exchange groups introduced
after graft polymerization can be made 5 meq/g at its maximum.
[0078] The nonwoven fabric carrying a strongly acidic
cation-exchange group can be prepared by the following method. As
in the case of the nonwoven fabric carrying a strongly basic
anion-exchange group, a polyolefin nonwoven fabric having a fiber
diameter of 20-50 .mu.m and a porosity of about 90% is subjected to
the so-called radiation graft polymerization comprising .gamma.-ray
irradiation onto the nonwoven fabric and the subsequent graft
polymerization, thereby introducing graft chains; and the graft
chains thus introduced are then treated with a heated sulfuric acid
to introduce sulfonic acid groups thereinto. If the graft chains
are treated with a heated phosphoric acid, phosphate groups can be
introduced. The degree of grafting can reach 500% at its maximum,
and the capacity of the ion-exchange groups thus introduced after
graft polymerization can reach 5 meq/g at its maximum.
[0079] The base material of the ion-exchanger 48 may be a
polyolefin such as polyethylene or polypropylene, or any other
organic polymer. Further, besides the form of a nonwoven fabric,
the ion-exchanger may be in the form of a woven fabric, a sheet, a
porous material, short fibers, etc.
[0080] When polyethylene or polypropylene is used as the base
material, graft polymerization can be effected by first irradiating
radioactive rays (.gamma.-rays or electron beam) onto the base
material (pre-irradiation) to thereby generate a radical, and then
reacting the radical with a monomer, whereby uniform graft chains
with few impurities can be obtained. When an organic polymer other
than polyolefin is used as the base material, on the other hand,
radical polymerization can be effected by impregnating the base
material with a monomer and irradiating radioactive rays
(.gamma.-rays, electron beam or UV-rays) onto the base material
(simultaneous irradiation). Though this method fails to provide
uniform graft chains, it is applicable to a wide variety of base
materials.
[0081] By using as the ion exchanger 48 a nonwoven fabric having an
anion-exchange ability or a cation-exchange ability, it becomes
possible that pure water or ultrapure water, or a liquid such as an
electrolytic solution can freely move within the nonwoven fabric
and easily arrive at the active points in the nonwoven fabric
having a catalytic activity for water dissociation, so that many
water molecules are dissociated into hydrogen ions and hydroxide
ions. Further, by the movement of pure water or ultrapure water, or
a liquid such as an electrolytic solution, the hydroxide ions
produced by the water dissociation can be efficiently carried to
the surface of the processing electrode 42, whereby a high electric
current can be obtained even with a low voltage applied.
[0082] When the ion exchanger 48 has only one of anion-exchange
ability and cation-exchange ability, a limitation is imposed on
electrolytically processible materials and, in addition, impurities
are likely to form due to the polarity. In order to solve this
problem, the ion exchanger 48 may have such a structure wherein
anion-exchangers having an anion-exchange ability and
cation-exchangers having a cation-exchange ability are
concentrically disposed to constitute an integral structure. The
anion exchangers and the cation exchangers may be superimposed on
the surface, to be processed, of a substrate. Alternatively, the
above problem can be solved by using, as the ion exchanger 48, an
ion-exchanger which in itself carries both of an anion-exchange
group and a cation-exchange group. Such an ion exchanger may
include an amphoteric ion exchanger in which anion-exchange groups
and cation-exchange groups are distributed randomly, a bipolar ion
exchanger in which anion-exchange groups and cation-exchange groups
are present in layers, and a mosaic ion exchanger in which portions
containing anion-exchange groups and portions containing
cation-exchange groups are present in parallel in the thickness
direction. Incidentally, it is of course possible to selectively
use, as the ion exchanger 48, one having an anion-exchange ability
or one having a cation-exchange ability according to the material
to be processed.
[0083] Further, by making the ion exchanger 48 a multi-layer
structure consisting of laminated layers of ion-exchange materials,
such as a nonwoven fabric, a woven fabric and a porous membrane, it
is possible to increase the total ion exchange capacity whereby
formation of an oxide, for example in removal (polishing)
processing of copper, can be restrained to thereby avoid the oxide
adversely affecting the processing rate. In this regard, when the
total ion exchange capacity of an ion exchanger is smaller than the
amount of copper ions taken in the ion exchanger during removal
processing, the oxide should inevitably be formed on the surface or
the inside of the ion exchanger, which adversely affects the
processing rate. Thus, the formation of the oxide is governed by
the ion exchange capacity of an ion exchanger, and copper ions
exceeding the capacity should become the oxide. The formation of an
oxide can thus be effectively restrained by using, as the ion
exchanger 48, a multi-layer ion exchanger composed of laminated
layers of ion-exchange materials which has enhanced total ion
exchange capacity. In using any of the above-described ion
exchangers, the formation of an oxide can also be restrained and
the processing rate can be stabilized by regenerating the ion
exchanger, by means of an ion exchanger regeneration mechanism for
discharging process products accumulated within an ion exchanger,
so as to suppress accumulation of copper ions within the ion
exchanger.
[0084] It is also possible to make the ion exchanger 48 a
multi-layer structure with the topmost layer being composed of a
soft ion exchanger (ion exchange material) such as a porous
membrane or a woven fabric, or to cover the surface of the ion
exchanger 48 with a water-absorbing pad. This can avoid direct
contact between the ion exchanger 48 and a to-be-processed
material, thereby suppressing production of fiber dust due to
friction between the ion exchanger 48 and the to-be-processed
material and prolonging the mechanical life of the ion exchanger 48
itself.
[0085] Located above the electrode section 32, there is provided a
pure water nozzle 50 as a pure water supply section, extending
toward almost the center in the long direction of the groove 38,
for supplying pure water or ultrapure water. The pure water nozzle
50 supplies pure water or ultrapure water into the groove 38 of the
electrode section 32 to fill the groove 38 with pure water or
ultrapure water, and the pure water or ultra pure water is
discharged successively. Pure water herein refers to water having
an electric conductivity of not more than 10 .mu.S/cm, and
ultrapure water refers to water having an electric conductivity of
not more than 0.1 .mu.S/cm. Instead of pure water, a liquid having
an electric conductivity of not more than 500 .mu.S/cm or any
electrolytic solution may be used. By supplying such a processing
liquid during processing, the instability factors of processing,
such as process products and dissolved gases, can be removed, and
processing can be effected uniformly with good reproducibility.
[0086] With respect to the processing electrode 42 and the feeding
electrode 44, oxidation or dissolution thereof due to an
electrolytic reaction is generally a problem. In view of this, it
is preferred to use, as a base material of the feeding electrode
44, carbon, a noble metal that is relatively inactive, a conductive
oxide or a conductive ceramic, rather than a metal or metal
compound widely used for electrodes. A noble metal-based electrode
may, for example, be one obtained by plating or coating platinum or
iridium onto a titanium electrode, and then sintering the coated
electrode at a high temperature to stabilize and strengthen the
electrode. Ceramics products are generally obtained by
heat-treating inorganic raw materials, and ceramics products having
various properties are produced from various raw materials
including oxides, carbides and nitrides of metals and nonmetals.
Among them there are ceramics having an electric conductivity. When
an electrode is oxidized, the value of the electric resistance
generally increases to cause an increase of applied voltage.
However, by protecting the surface of an electrode with a
non-oxidative material such as platinum or with a conductive oxide
such as an iridium oxide, the decrease of electric conductivity due
to oxidation of the base material of an electrode can be
prevented.
[0087] A description will now be given of an example of processing
by means of the electrolytic processing apparatus (bevel-removal
apparatus).
[0088] First, a substrate W, having e.g. a copper film 6 (see FIG.
13B) as a conductor film (to-be-processed portion) formed in the
surface, is dropped between the pair of roller chucks 30, 30 to
hold the substrate vertically. At this time, the lowermost surface
of the substrate W is close to or in slight contact with the
surface of the ion exchanger 48.
[0089] Next, a given voltage is applied from the power source 40
between the processing electrodes 42 and the feeding electrodes 44,
while the substrate W is rotated. At the same time, pure water or
ultrapure water is supplied through the pure water nozzle 50 to the
inside of the groove 38 so as to fill the groove 38 with pure water
or ultrapure water. Thereby, electrolytic processing of the
conductor film (copper film 6) formed on the substrate W is
effected by hydrogen ions or hydroxide ions produced using the ion
exchanger 48. According to the above electrolytic processing
apparatus, a large amount of hydrogen ions or hydroxide ions can be
produced by allowing pure water or ultrapure water to flow within
the ion exchanger 48, and the large amount of such ions can be
supplied to the surface of the substrate W, whereby the
electrolytic processing can be conducted efficiently.
[0090] More specifically, by allowing pure water or ultrapure water
to flow within the ion exchanger 48, a sufficient amount of water
can be supplied to a functional group (sulfonic acid group in the
case of an ion exchanger carrying a strongly acidic cation-exchange
group) thereby to increase the amount of dissociated water
molecules, and the process product (including a gas) formed by the
reaction between the conductor film (copper film 6) and hydroxide
ions (or OH radicals) can be removed by the flow of water, whereby
the processing efficiency can be enhanced. The flow of pure water
or ultrapure water is thus necessary, and the flow of water should
desirably be constant and uniform. The constancy and uniformity of
the flow of water leads to constancy and uniformity in the supply
of ions and the removal of the process product, which in turn leads
to constancy and uniformity in the processing.
[0091] After completion of the electrolytic processing, the power
source 40 is disconnected, the supply of pure water or ultrapure
water is stopped, and then the rotation of the substrate W is
stopped. Thereafter, the transfer robot takes the processed
substrate W, and then transfers the substrate W to the next
process.
[0092] This embodiment shows the case of supplying pure water,
preferably ultrapure water to the ion exchanger 48. The use of pure
water or ultrapure water containing no electrolyte upon
electrolytic processing can prevent impurities such as an
electrolyte from adhering to and remaining on the surface of the
substrate W. Further, copper ions or the like dissolved during
electrolytic processing are immediately caught by the ion exchanger
48 through the ion-exchange reaction. This can prevent the
dissolved copper ions or the like from re-precipitating on the
other portions of the substrate W, or from being oxidized to become
fine particles which contaminate the surface of the substrate
W.
[0093] Ultrapure water has a high resistivity, and therefore an
electric current is hard to flow therethrough. A lowering of the
electric resistance is made by interposing the ion exchanger 48
between the electrodes and a substrate. Further, an electrolytic
solution, when used in combination with ultrapure water, can
further lower the electric resistance and reduce the power
consumption. When electrolytic processing is conducted by using an
electrolytic solution, the portion of a workpiece that undergoes
processing ranges over a slightly wider area than the area of the
processing electrode. In the case of the combined use of ultrapure
water and the ion exchanger, on the other hand, since almost no
electric current flows through ultrapure water, electric processing
is effected only within the area of a workpiece that is equal to
the area of the processing electrode and the ion exchanger.
[0094] It is possible to use, instead of pure water or ultrapure
water, an electrolytic solution obtained by adding an electrolyte
to pure water or ultrapure water. The use of such an electrolytic
solution can further lower the electric resistance and reduce the
power consumption. A solution of a neutral salt such as NaCl or
Na.sub.2SO.sub.4, a solution of an acid such as HCl or
H.sub.2SO.sub.4, or a solution of an alkali such as ammonia, may be
used as the electrolytic solution, and these solutions may be
selectively used according to the properties of the workpiece. When
the electrolytic solution is used, it is preferred to provide a
slight interspace between the substrate W and the ion exchanger 48
so that they are not in contact with each other. To avoid
contamination of the substrate W induced by an electrolytic
solution, it is better to use a dilute electrolytic solution which
electric conductivity is not more than 500 .mu.S/cm. Therefore, the
cleanliness of the processed workpiece can be increased.
[0095] Further, it is also possible to use, instead of pure water
or ultrapure water, a liquid obtained by adding a surfactant to
pure water or ultrapure water, and having an electric conductivity
of not more than 500 .mu.S/cm, preferably not more than 50
.mu.S/cm, more preferably not more than 0.1 .mu.S/cm (resistivity
of not less than 10 M.OMEGA.cm). Due to the presence of a
surfactant, the liquid can form a layer, which functions to inhibit
ion migration evenly, at the interface between the substrate W and
the ion exchanger 48, thereby moderating concentration of ion
exchange (metal dissolution) to enhance the flatness of the
processed surface. The surfactant concentration is desirably not
more than 100 ppm. When the value of the electric conductivity is
too high, the current efficiency is lowered and the processing rate
is decreased. The use of the liquid having an electric conductivity
of not more than 500 .mu.S/cm, preferably not more than 50
.mu.S/cm, more preferably not more than 0.1 .mu.S/cm, can attain a
desired processing rate.
[0096] According to the present invention, the processing rate can
be considerably enhanced by interposing the ion exchanger 48
between the substrate W and the processing and feeding electrodes
42, 44. In this regard, electrochemical processing using ultrapure
water is effected by a chemical interaction between hydroxide ions
in ultrapure water and a material to be processed. However, the
amount of the hydroxide ions acting as reactant in ultrapure water
is as small as 10.sup.-7 mol/L under normal temperature and
pressure conditions, so that the removal processing efficiency can
decrease due to reactions (such as an oxide film-forming reaction)
other than the reaction for removal processing. It is therefore
necessary to increase hydroxide ions in-order to conduct removal
processing efficiently. A method for increasing hydroxide ions is
to promote the dissociation reaction of ultrapure water by using a
catalytic material, and an ion exchanger can be effectively used as
such a catalytic material. More specifically, the activation energy
relating to water-molecule dissociation reaction is lowered by the
interaction between functional groups in an ion exchanger and water
molecules, whereby the dissociation of water is promoted to thereby
enhance the processing rate.
[0097] FIG. 5 shows an electrolytic processing apparatus (substrate
processing apparatus), utilized as a bevel-removal apparatus,
according to another embodiment of the present invention. The
bevel-removal apparatus (electrolytic processing apparatus) of this
embodiment employs, as the electrode section 32 having a plurality
of electrodes 36, one having a sufficiently larger length than the
peripheral length of the substrate W. Further, the electrode
section 32 is disposed in a tilted state, e.g. by angle .theta.
relative to a horizontal plane, whereby the substrate W is allowed
to roll over the ion exchanger 48 disposed in the groove 38 and
move along the electrode section 32. The other construction is the
same as the above-described embodiment.
[0098] According to this embodiment, the substrate W spontaneously
rotates by its own weight, making it possible to omit a mechanism
for holding and rotating a substrate, and thus simplify the
construction.
[0099] According to the bevel-removal apparatuses (substrate
processing apparatuses) of the above-described embodiments,
electrolytic processing of a workpiece, such as a substrate, can be
effected through electrochemical action, without causing any
physical defects in the workpiece that would impair the properties
of the workpiece. The electrolytic processing can effectively
remove (clean off) a conductive material formed on or adhering to a
bevel portion, etc. of a substrate or process a peripheral portion
of a substrate. Although the apparatuses, as shown in FIGS. 2
through 5, are accompanied with ion exchangers, the process of the
present invention is achieved without an ion exchanger, but by
using electrolytic solution as a liquid. The processing of a
substrate can be effected even by solely using pure water or
ultrapure water. This obviates the possibility that impurities such
as an electrolyte will adhere to or remain on the surface of the
substrate, can simplify a cleaning process after the removal
processing, and can remarkably reduce a load upon waste liquid
disposal.
[0100] FIG. 6 is a schematic sectional view of an electrolytic
processing apparatus 511 as a substrate processing apparatus
according to still another embodiment of the present invention. The
electrolytic processing apparatus 511 comprises an electrode
holding section 512 for holding a processing electrode 518, an
electrode-rotating shaft 513 secured to the electrode holding
section 512, a substrate holding section 514, provided below the
electrode holding section 512, for sucking and holding a substrate
W as a workpiece (e.g. a wafer having a copper film 6 as shown in
FIG. 13B), and a substrate-rotating shaft 515 secured to the
substrate holding section 514. According to this embodiment, the
substrate W functions as a feeding electrode, as will be described
below. The electrolytic processing apparatus 511 also includes a
power source 523 for applying a voltage between the processing
electrode 518 and the substrate W. The electrode holding section
512 moves relative to the substrate holding section 514, as will be
described later.
[0101] The electrolytic processing apparatus 511 is also provided
with a hollow motor 541 as a substrate-rotating means for rotating
the substrate holding section 514 via the substrate-rotating shaft
515 (rotation about the central axis of the substrate-rotating
shaft 515 (rotation L)); a hollow motor 542 as an
electrode-rotating means for eccentrically rotating the electrode
holding section 512 about a vertical axis via the
electrode-rotating shaft 513 (rotation U); a pivot arm 543, a pivot
shaft 544 and a pivot motor 545, as an electrode-pivoting means for
pivoting the electrode holding section 512 toward a position right
above the substrate holding section 514, or pivoting the electrode
holding section 512 horizontally from the position right above the
substrate holding section 514; a ball screw 546 and a vertical
movement motor 547, as a vertical movement means for raising the
electrode holding section 512 away from the substrate holding
section 514, or lowering it close to the substrate holding section
514; and a processing liquid supply means (not shown) as a fluid
supply means for supplying a processing liquid 502 as a fluid. The
pivot arm 543 is driven by the pivot motor 545, and pivots the
electrode holding section 512. The ball screw 546 is driven by the
vertical movement motor 547, and raises and lowers the pivot shaft
544, the pivot arm 543 and the electrode holding section 512.
[0102] The electrode holding section 512 has a substantially
discoidal shape, and is disposed horizontally. A circumferential
wall 516 is formed at the periphery of the lower surface 512b of
the electrode holding section 512. A concave section 517 is formed
by the circumferential wall 516 in the lower surface 512b of the
electrode holding section 512. The processing electrode 518 in a
discoidal shape is mounted horizontally to the end of the
circumferential wall 516. A through-hole 519 is formed in the
center of the electrode holding section 512. A number of
through-holes 519 are formed in the processing electrode 518 for
supplying the processing liquid 502 to the substrate W. The
processing electrode 518 is designed to have a radius larger than
the radius of the substrate W.
[0103] The electrode-rotating shaft 513 in a hollow cylindrical
shape is mounted vertically on the upper surface 512a of the
electrode holding section 512. A hollow passage 520 is formed in
the electrode-rotating shaft 513, and the hollow passage 520
communicates with the through-hole 519 of the electrode holding
section 512. The hollow motor 542 is coupled to the upper end 513a
of the electrode-rotating shaft 513, and the hollow portion 542c of
the hollow motor 542 communicates with the hollow passage 520. A
hollow portion 548 is formed at the connection of the pivot arm 543
with the hollow motor 542, and the hollow portion 548 communicates
with the hollow portion 542c. The hollow motor 542 is provided on
the lower surface 543a of the pivot arm 543 in the vicinity of the
free end 543c of the pivot arm 543.
[0104] An electric wire 524, which is connected to the upper
surface 518a of the processing electrode 518, passes through the
concave section 517, the through-hole 519, the hollow passage 520,
the hollow portion 542c and the hollow portion 548, through a slip
ring 526 provided on the upper surface 543b of the pivot arm 543,
and then through a hollow portion 539 formed in the pivot arm 543
and in the pivot shaft 544, and connects with the power source 523.
A processing liquid supply inlet 528 as a fluid supply section is
formed in the electrode-rotating shaft 513, and a processing liquid
supply means (not shown) supplies the processing liquid 502 to the
supply inlet 528 of the electrode-rotating shaft 513.
[0105] The substrate holding section 514 has a discoidal shape, and
is disposed horizontally. The substrate holding section 514 sucks
and holds the substrate W on the upper surface 514a that the
electrodeposited Cu surface faces upwardly. A through-hole 521 is
formed in the center of the substrate holding portion 514.
[0106] The substrate-rotating shaft 515 in a hollow cylindrical
shape is mounted vertically on the lower surface 514b of the
substrate holding section 514. A hollow passage 522 is formed in
the substrate-rotating shaft 515, and the hollow passage 522
communicates with the through-hole 521 of the substrate holding
section 514. The hollow motor 541 is coupled to the lower end 515b
of the substrate-rotating shaft 515. The hollow portion 541c of the
hollow motor 541 communicates with the hollow passage 522.
[0107] An electric wire 525, which is connected to the lower
surface WB, i.e. the copper layer 6 (see FIG. 13B) of the substrate
W, passes through the through-hole 521, the hollow passage 522 and
the hollow portion 541c, and then through a slip ring 527 provided
on the lower surface 541b of the hollow motor 541, and connects
with the power source 523. The electrolytic processing apparatus
511 of the present embodiment is of the direct feeding type which
feeds electricity directly to the substrate W. The substrate W is
disposed in parallel with the processing electrode 518.
[0108] As shown in FIG. 7A, the substrate W, which is to be held by
suction on the upper surface 514a (see FIG. 6) of the substrate
holding section 514, may be of the shape of a thin disc in which a
seed layer 7 (e.g. copper seed layer) as a film, or as a first film
is formed all over the upper surface WA, and a copper film (plated
layer) 6 as a film, or as a second film is formed in the effective
device portion 533 of the substrate, i.e. the other portion of the
substrate W other than the peripheral portion 532. Typically, the
copper film 6 is formed more thickly than the seed layer 7.
Further, the substrate W has such a film formation that there is a
step between the peripheral portion 532 and the effective device
portion 533. Incidentally, regarding FIGS. 7A and 7B, the seed
layer 7 and the copper film 6 are drawn more thickly than the real
ones.
[0109] The operation of the electrolytic processing apparatus 511
of this embodiment will now be described by referring to FIG.
6.
[0110] The substrate W is placed on the upper surface 514a of the
substrate holding section 514 and held by suction thereon. The
pivot motor 545 pivots, via the pivot shaft 544, the pivot arm 543
about the pivot shaft 544, whereby the electrode holding section
512 is pivoted horizontally by the pivot arm 543 and reaches a
position right above the substrate holding section 514. Thereafter,
the vertical movement motor 547 rotates the ball screw 546 and
lowers the pivot shaft 544, and the pivot shaft 544 lowers, via the
pivot arm 543, the electrode holding section 512 toward the
substrate holding section 514, so that the upper surface WA of the
substrate W comes close to the lower surface 518b of the processing
electrode 518.
[0111] The processing liquid 502 is supplied by a processing liquid
supply means (not shown) to the processing liquid supply inlet 528.
The processing liquid 502 passes through the hollow passage 520,
the through-hole 519, the concave 517 and the through-holes 529,
and is supplied to the entire upper surface WA of the substrate W
from the entire surface 518b, facing the substrate W, of the
processing electrode 518. Thereafter, a voltage is applied from a
power source 523 between the processing electrode 518 and the
substrate W. In this embodiment, the voltage is applied so that the
processing electrode 518 side becomes a cathode, and the substrate
W side becomes an anode. Then, the electrode holding portion 512 is
rotated eccentrically (rotation U) at a predetermined angular rate
by the hollow motor 542 via the electrode-rotating shaft 513, and
the substrate holding section 514 is rotated (rotation L) at a
predetermined angular rate by the hollow motor 541 via the
substrate-rotating shaft 515. It is preferable that the hollow
motors 541 and 542 respectively eccentrically rotate, and thereby
rotate the electrode holding portion 512 and the substrate W in
such a manner that the processing electrode 518 can process the
entire upper surface WA of the substrate W periodically, and
removal processing of the seed layer 7 and the copper film 6 can be
effected at a uniform processing rate. Incidentally, since the
processing electrode 518 rotates eccentrically and the substrate W
rotates, the processing electrode 518 moves relative to the
substrate W.
[0112] Next, the vertical movement motor 547 further rotates the
ball screw 546 to further lower the electrode holding section 512
to a position at which the processing electrode 518 and the upper
surface WA of the substrate W are opposed to each other at a slight
distance. Therefore, treatment of the substrate W, i.e.
electrolytic processing of the copper film 6 and the seed layer 7,
is carried out.
[0113] Since the lower surface 518b of the processing electrode 518
and the upper surface WA of the substrate W, as a workpiece or as a
feeding electrode, are thus opposed and close to each other, when
water, pure water or ultrapure water, for example, is used as the
processing liquid 502, water molecules dissociate into hydroxide
ions (OH.sup.-) and hydrogen ions (H.sup.+). By the flow of the
liquid and by the electric field between the substrate W and the
processing electrode 518, the density of the hydroxide ions
(OH.sup.-), produced by the dissociation of water molecules,
increases in the vicinity of the upper surface WA of the substrate
W, whereby a reaction between the atoms of the copper film 6 and
the hydroxide ions (OH.sup.-) and a reaction between the atoms of
the seed layer 7 and the hydroxide ions (OH.sup.-) can occur. The
reaction products of these reactions are removed from the substrate
W. Removal processing of the copper film 6 and the seed layer 7 is
thus effected.
[0114] The processing of the substrate W is terminated at the time
when the removal of the seed layer 7 in the peripheral portion 532
is completed, as shown in FIG. 7B. In FIG. 7B, the broken lines
denote the surface of the substrate before the processing. By the
processing, the film in the upper surface WA of the substrate W is
removed by an even thickness t over the entire upper surface WA
simultaneously. The seed layer 7 in the peripheral portion 532 is
thus completely removed, whereas the copper film 6 in the effective
device portion 533 still remains. Selective peeling or complete
removal of the seed layer 7 in the peripheral portion 532 can thus
be achieved.
[0115] According to this embodiment, the end portion of the
complete film removal region in the substrate surface WA naturally
corresponds to the boundary between the peripheral portion 532 and
the effective device portion 533, meaning that the complete film
removal width is automatically determined. Further, since the
so-called electrolytic bevel processing can be performed
simultaneously with processing of the effective device portion 533,
the number of process steps can be decreased. The electrolytic
processing apparatus of this embodiment can thus simplify the film
removal step for peeling or completely removing the seed layer 7 in
the peripheral portion 532 and perform processing of the peripheral
portion 532 without the necessity of control of the processing
region.
[0116] Next, the vertical movement motor 547 reverses the rotation
of the ball screw 546 to raise the electrode holding section 512,
and the rotation (rotation U) of the electrode holding section 512
by the hollow motor 542 and the rotation (rotation L) of the
substrate holding section 514 by the hollow motor 541 are
terminated. The voltage application by the power source 523 is also
terminated. The pivot motor 545 pivots the pivot arm 543 via the
pivot shaft 544, thereby pivoting horizontally the electrode
holding portion 512 away from the position right above the
substrate holding portion 514. The substrate W is then taken out of
the substrate holding section 514.
[0117] It is desirable to use as the processing liquid 502 a liquid
obtained by adding an additive, such as a surfactant, to water,
pure water or ultrapure water, and having an electric conductivity
of not more than 500 .mu.S/cm, preferably not more than 50
.mu.S/cm, more preferably not more than 10 .mu.S/cm, especially
preferably not more than 0.1 .mu.S/cm. The use of such a liquid
makes it possible to carry out clean processing, without leaving
impurities, or dipolar molecules having a strong adhesion to the
processed surface, on the substrate surface WA and reduce roughness
of the processed surface, whereby a cleaning step for cleaning the
substrate W after the electrolytic processing can be
simplified.
[0118] An aqueous solution of a neutral salt such as NaCl or
Na.sub.2SO.sub.4, an acid such as HCl or H.sub.2SO.sub.4, or an
alkali such as ammonia may also be used as the processing liquid
502, and may be properly selected according to the properties of a
workpiece (substrate).
[0119] FIG. 8 is a schematic sectional view of an electrolytic
processing apparatus 111 as a substrate processing apparatus
according to still another embodiment of the present invention.
Compared to the electrolytic processing apparatus 511 shown in FIG.
6, the electrolytic processing apparatus 111 of this embodiment
differs in that an ion exchanger 135 is mounted on the lower
surface 118b of a processing electrode 118 such that it covers the
entire lower surface 118b, the other construction of the
electrolytic processing apparatus 111 being the same as the
electrolytic processing apparatus 511. The electrolytic processing
apparatus 111 of this embodiment is also of the direct feeding type
which feeds electricity directly to the substrate W. As with the
electrolytic processing apparatus 511 of FIG. 6, a processing
liquid 102 is supplied from a processing liquid supply inlet 128 as
a fluid supply section, a voltage is applied from a power source
123 between the processing electrode 118 and the substrate W, and
the substrate W shown in FIG. 7A can be processed.
[0120] In FIG. 8, the description of a hollow motor which is
connected to an electrode-rotating shaft 113 and rotates an
electrode holding section 112, a pivot arm, a pivot shaft, a pivot
motor, a slip ring mounted on the pivot arm, a hollow motor which
is connected to a substrate-rotating shaft 115 and rotates a
substrate holding section 114, a slip ring mounted on the hollow
motor, a ball screw and a vertical movement motor is omitted.
[0121] According to the electrolytic processing apparatus 111 of
this embodiment which is provided with the ion exchanger 135, in
carrying out processing of the substrate W, a vertical movement
means (not shown) lowers the electrode holding section 112 until
the ion exchanger 135 comes into contact with the upper surface WA
of the substrate W.
[0122] Due to the provision of the ion exchanger 135, the operation
of the electrolytic processing apparatus 111 differs from that of
the electrolytic processing apparatus 511 shown in FIG. 6, as
explained below.
[0123] According to the electrolytic processing apparatus 111 of
this embodiment, when water, pure water or ultrapure water, for
example, is supplied as the processing liquid 102, the processing
liquid 102 supplied flows between the substrate W and the ion
exchanger 135. The ion exchanger 135 then effectively promotes the
dissociation of the processing liquid 102 to produce plenty of
hydroxide ions and hydrogen ions. By the flow of the processing
liquid 102 and by the electric field between the substrate W and
the processing electrode 118, the density of hydroxide ions
increases in the vicinity of the upper surface WA of the substrate
W, whereby reaction between the atoms of the copper film 6 and
hydroxide ions and reaction between the atoms of the seed layer 7
and hydroxide ions can occur. The use of the ion exchanger 135,
which can produce plenty of hydroxide ions, can further enhance the
density of hydroxide ions in the vicinity of the substrate upper
surface WA, enabling an efficient processing to remove a
predetermined even thickness of film simultaneously from the seed
layer 7 and from the copper film 6 over the entire upper surface WA
of the substrate W and thereby shortening the processing time. The
predetermined thickness should at least be the thickness of the
seed layer 7 in the peripheral portion 532 of the substrate.
[0124] The ion exchanger 135 may either be of a single layer
structure or of a multi-layer laminated structure. Some of the
processing products (hydroxides and ions) of the electrolytic
reactions accumulate on the surface or in the inside of the ion
exchanger, and the amount of the accumulation depends upon the ion
exchange capacity of the ion exchanger. When the amount of the
accumulated processing products exceeds the ion exchange capacity
of the ion exchanger, the accumulated products can change their
forms, which can affect the processing rate and its distribution.
Accordingly, it is necessary not to accumulate the processing
products in the ion exchanger in an amount exceeding the ion
exchange capacity, or to remove the accumulated products from the
ion exchanger. A multi-layer laminated ion exchanger generally has
an enhanced ion exchange capacity.
[0125] FIG. 9 is a schematic sectional view of an electrolytic
processing apparatus 201 as a substrate processing apparatus
according to still another embodiment of the present invention.
[0126] As with the electrolytic processing apparatus 111 shown in
FIG. 8, the electrolytic processing apparatus 201 of this
embodiment includes an electrode holding section 212, a substrate
holding section 214, a processing electrode 218 and an ion
exchanger 235. The ion exchanger 235 is mounted on the lower
surface 218b of the processing electrode 218 such that the ion
exchanger 235 covers the entire lower surface 218b. A concave
section 217 is formed by a circumferential wall 216 in the lower
surface 212b of the electrode holding section 212. A through-hole
219 is formed in the center of the electrode holding section
212.
[0127] Further, a number of through-holes 229 are formed in the
processing electrode 218 for supplying a processing liquid 202 as a
fluid to the substrate W. An electrode-rotating shaft 213 in a
hollow cylindrical shape is mounted vertically on the upper surface
212A of the electrode holding section 212. A hollow passage 220 is
formed in the electrode-rotating shaft 213, and the hollow passage
220 communicates with the through-hole 219 of the electrode holding
section 212. A processing liquid supply inlet 228 is formed in the
electrode-rotating shaft 213, and the processing liquid supply
inlet 228 communicates with the hollow passage 220. The processing
liquid 202 supplied to the processing liquid supply inlet 228
passes through the hollow passage 220, the through-hole 219, the
concave section 217 and the through-holes 229, and is supplied from
the entire surface 218b, facing the substrate W, of the processing
electrode 218. According to the electrolytic processing apparatus
201 of this embodiment, as with the electrolytic processing
apparatus 111 shown in FIG. 8, the substrate W shown in FIG. 7A can
be processed.
[0128] In FIG. 9, the description of a hollow motor which is
connected to the electrode-rotating shaft 213 and rotates the
electrode holding section 212, a pivot arm, a pivot shaft, a pivot
motor, a slip ring mounted on the pivot arm, a motor which is
connected to a substrate-rotating shaft 215 and rotates the
substrate holding section 214, a ball screw and a vertical movement
motor, is omitted.
[0129] The electrolytic processing apparatus 201 of this embodiment
has the same construction as the electrolytic processing apparatus
111 shown in FIG. 8, except for the following respects.
[0130] According to the electrolytic processing apparatus 201 of
this embodiment, a hollow passage is not formed in the
substrate-rotating shaft 215, that is, the substrate-rotating shaft
215 comprises a solid shaft. The motor (not shown in FIG. 9),
connected to the substrate-rotating shaft 215, for rotating the
substrate holding section 214 does not have a hollow portion, and a
slip ring is not mounted on the motor. A hollow portion for passing
therethrough an electric wire is not formed in the pivot arm and in
the pivot shaft (both not shown in FIG. 9).
[0131] In the case of the electrolytic processing apparatus 111
shown in FIG. 8, as described above, the processing electrode 118
is mounted on the electrode holding section 112, and the substrate
W, held by suction on the substrate holding section 114, functions
as a feeding electrode. According to the electrolytic processing
apparatus 201 of this embodiment, on the other hand, feeding
electrode 236, together with the processing electrode 218, is
mounted on the electrode holding section 212, and an insulator
section 237 is provided between the processing electrode 218 and
the feeding electrode 236. Thus, the electrolytic processing
apparatus 201 of this embodiment is of the so-called one side
feeding type.
[0132] An electric wire 225 connected to the feeding electrode 236,
together with an electric wire 224 connected to the processing
electrode 218, passes through the concave section 217, the
through-hole 219, the hollow passage 220, a hollow portion (not
shown) formed in a hollow motor (not sown) for rotating the
electrode holding section 212 and a hollow portion (not shown)
formed in the pivot arm (not shown), and further through a slip
ring (not shown) provided on the upper surface of the pivot arm,
and connects with a power source 223.
[0133] As shown in FIG. 10, the processing electrode 218 may be
composed of three fan-shaped processing electrode elements 218c to
218e, and the feeding electrode may be composed of three fan-shaped
feeding electrode elements 236c to 236e; and the processing
electrode elements 218c to 218e and the feeding electrode elements
236c to 236e may be disposed alternately in the circumferential
direction. The insulator section 237 may include a portion 237a
disposed in the center of the electrode holding section 212 and a
portion 237b disposed radially between the processing electrode
elements 218c to 218e and the feeding electrode elements 236c to
236e. Through-holes 229, in which the processing liquid 202 flows,
may be formed in the processing electrode elements 218c to 218e and
the feeding electrode elements 236c to 236e. In FIG. 10, only the
through-holes 229 formed in the processing electrode element 218c
are shown. Though not shown, through-holes 229 are likewise formed
in the other processing electrode elements 218d and 218e and in the
feeding electrode elements 236c to 236e.
[0134] As shown in FIGS. 9 and 10, electric wires are connected to
the processing electrode elements 218c to 218e and to the feeding
electrode elements 236c to 236e. Three electric wires (only one is
shown) for the processing electrode elements 218c to 218e are
assembled into one electric wire 224, and three electric wires
(only one is shown) for the feeding electrode elements 236c to 236e
are assembled into one electric wire 225; and the electric wires
224, 225 are connected, via the concave section 217, the
through-hole 219, the hollow passage 220 and a slip ring (not
shown), to the power source 236.
[0135] The electrolytic processing apparatus 201 of this embodiment
operates in almost the same manner as the electrolytic processing
apparatus 111 shown in FIG. 8, except that the substrate W held on
the substrate holding section 214 does not function as a feeding
electrode.
[0136] The electrolytic processing apparatus 201 of this
embodiment, owing to the provision of the ion exchanger 235, can
perform an efficient electrolytic processing. Further, since the
substrate W is not utilized as a feeding electrode, not only a
conductive substrate W, but also a non-conductive substrate W on
which a conductive film is formed, can be processed.
[0137] Incidentally, in the above-described electrolytic processing
apparatus 511 shown in FIG. 6, instead of mounting the disc-shaped
processing electrode 518 on the electrode holding section 512, it
is possible to mount such a disc-shaped electrode (processing and
feeding electrodes) as shown in FIG. 10 in which processing
electrode elements and feeding electrode elements are disposed
alternately in the circumferential direction, thereby making the
electrolytic processing apparatus a one side feeding type instead
of the direct feeding type.
[0138] In this case, the electric wire 524 connected to each
processing electrode element and the electric wire 525 connected to
each feeding electrode element together pass through the concave
section 517, the through-hole 519, the hollow passage 520, the
hollow portion 542c and the hollow portion 548, and further through
the slip ring 526 provided on the upper surface 543b of the pivot
arm 543, and connect with the power source 523. Thus, the electric
wire 525 is not connected to the copper film 6 (see FIG. 7A and
FIG. 13B) of the substrate W.
[0139] FIG. 11 is a schematic sectional view of a chemical etching
apparatus 311 as a substrate processing apparatus according to an
embodiment of the present invention. The chemical etching apparatus
311 of this embodiment is a chemical etching apparatus, which uses
an etching liquid 302 instead of a processing liquid, and, as
compared to the electrolytic processing apparatus 511 shown in FIG.
6, has the below-described constructional differences. As with the
electrolytic processing apparatus 511 shown in FIG. 6, the
substrate W shown in FIG. 7A can be etch-processed by this chemical
etching apparatus 311.
[0140] The chemical etching apparatus 311 includes a processing
head holding section 312 which holds a disc-shaped processing head
318. A processing head-rotating shaft 313 for rotating the
processing head 318 is secured to the processing head holding
section 312. The processing head holding section 312, the
processing head-rotating shaft 313 and the processing head 318
respectively have the same shapes as the electrode holding section
512, the electro-rotating shaft 513 and the processing electrode
518 shown in FIG. 6. As with the electrode-rotating shaft 513 shown
in FIG. 6, the processing head-rotating shaft 313 rotates the
processing head 318. A number of through-holes 329 are formed in
the processing head 318 for passing therethrough the etching liquid
302 and supplying the etching liquid 302 to the entire upper
surface WA of the substrate W.
[0141] The chemical etching apparatus 311 is not provided with a
power source, and a voltage is not applied between the processing
head 318 and the substrate W. Accordingly, the chemical etching
apparatus 311 does not have an electric wire and is not provided
with a slip ring. Further, a hollow passage for passing
therethrough an electric wire is not formed in a substrate-rotating
shaft 315 which is secured to a substrate holding section 314.
[0142] The chemical etching apparatus 311 also includes a motor 341
as a substrate-rotating means for rotating the substrate holding
section 314 secured to a substrate-rotating shaft 315 via the
substrate-rotating shaft 315 (rotation about the central axis of
the substrate-rotating shaft 315 (rotation L)); a motor 342 as a
processing head-rotating means for eccentrically rotating the
processing head holding section 312 secured to the processing
head-rotating shaft 313 about a vertical axis (rotation U); a pivot
arm 343, a pivot shaft 344 and a pivot motor 345, as a processing
head-pivoting means for pivoting the processing head holding
section 312 toward a position right above the substrate holding
section 314, or pivoting the processing head holding section 312
horizontally from the position right above the substrate holding
section 314; a ball screw 346 and a vertical movement motor 347, as
a vertical movement means for raising the processing head holding
section 312 away from the substrate holding section 314, or
lowering it close to the substrate holding section 314; and an
etching liquid supply means (not shown) as a fluid supply means for
supplying an etching liquid 302 as a fluid. The pivot arm 343 is
driven by the pivot motor 345, and pivots the processing head
holding section 312. The ball screw 346 is driven by the vertical
movement motor 347, and raises and lowers the pivot shaft 344, the
pivot arm 343 and the processing head holding section 312.
[0143] The operation of the chemical etching apparatus 311 of this
embodiment differs from that the electrolytic processing apparatus
511 shown in FIG. 6 in the following respects. The etching liquid
302 is used instead of the processing liquid 502, and a voltage is
not applied between the processing head 318 and the substrate
W.
[0144] The chemical etching apparatus 311 of the present embodiment
can perform etch-processing of e.g. a copper-plated substrate as
shown in FIG. 7A, having a seed layer (copper seed layer) 7 and a
copper film (plated layer) 6. As the etching liquid 302, an
oxidative acid (e.g. HNO.sub.3 solution) which can dissolve copper,
a combination of an oxidizing agent and an acid (e.g.
H.sub.2O.sub.2 and HF solution), an alkali liquid (e.g. conc.
NH.sub.4OH), an organic acid solution, an organic alkali solution,
etc. may be used.
[0145] According to this embodiment, the seed layer 7 and the
copper film 6 of the substrate W can be etched by the etching
liquid 302 at a uniform etch-processing rate. The etch-processing
of the substrate W is terminated at the time when the removal of
the seed layer 7 in the peripheral portion 532 is completed, as
shown in FIG. 7B. By the etch-processing, the film in the upper
surface WA of the substrate W is removed by an even thickness t
over the entire upper surface WA simultaneously. The seed layer 7
in the peripheral portion 532 is thus completely removed, whereas
the copper film 6 in the effective device portion 533 still
remains.
[0146] The chemical etching apparatus 311 of this embodiment can
thus simplify removal of the seed layer 7 in the peripheral portion
532 and securely remove the seed layer 7. Since the end portion of
the complete film removal region in the substrate surface WA
naturally corresponds to the boundary between the peripheral
portion 532 and the effective device portion 533, the complete film
removal width is automatically determined. Further, since the
so-called bevel etching can be performed simultaneously with
processing of the effective device portion 533, the number of
process steps can be decreased.
[0147] The above-described apparatuses shown in FIGS. 6 through 11
are of the so-called "face-up type", according to which the
substrate is held by suction on the substrate holding section
disposed at a lower position, the processing electrode or the
processing head is held by the electrode holding section or by the
processing head holding section disposed at an upper position, and
the upper surface of the substrate is processed with the lower
surface of the processing electrode or of the processing head. It
is however possible to employ the so-called "face-down type"
according to which the substrate is held by suction by a substrate
holding section disposed at an upper position, a processing
electrode or a processing head is held by an electrode holding
section or by a processing head holding section disposed at a lower
position, and the lower surface of the substrate is processed with
the upper surface of the processing electrode or of the processing
head.
[0148] Further, according to the above-described apparatuses, the
electrode holding section or the processing head holding section is
allowed to rotate eccentrically (rotation U) about a vertical axis.
But to make a relative movement between the processing section and
the substrate, it is possible to design the apparatuses so that the
electrode holding section or the processing head holding section is
allowed to make a scroll (orbital) movement or a reciprocating
movement. By the scroll movement or reciprocating movement, the
processing electrode or the processing head may process the
entirety of the opposed surface of the substrate in a periodical
manner.
[0149] A description will now be given of an electrolytic
processing method (substrate processing method) according to an
embodiment of the present invention by referring to FIGS. 7A, 7B
and FIG. 8.
[0150] Taking a copper-plated substrate as an example, the seed
layer 7 is first formed over the entire substrate surface WA. Next,
the copper film 6 is formed in the effective device portion 533 of
the substrate surface WA. Accordingly, the film thus formed has a
step between the peripheral portion 532 and the effective device
portion 533 of the substrate surface WA. The processing electrode
118 is moved close to the substrate W so that the ion exchanger 135
gets positioned between the substrate W and the processing
electrode 118. The substrate W, the ion exchanger 135 and the
processing electrode 118 may be positioned such that the substrate
W is in contact with the ion exchanger 135. The processing liquid
102 is supplied between the substrate W and the ion exchanger 135.
The processing liquid 102 may be supplied so that it can spread
over the entire interspace or interface between the substrate W and
the ion exchanger 135. Next, a voltage is applied from the power
source 123 to between the processing electrode 118 and the
substrate W. Upon the voltage application, the substrate W
functions as a feeding electrode. A feeding electrode is thus
provided. The processing electrode 118 is then moved relative to
the substrate W. The ion exchanger 135 may move together with the
processing electrode 118. Further, the processing electrode 118 and
the ion exchanger 135 may be moved over the entire surface WA being
processed in a periodical manner.
[0151] Processing of the substrate W is terminated at the time when
the seed layer 7 in the peripheral portion 532 is completely
removed. By the processing, the film in the upper surface WA of the
substrate W is removed by an even thickness t over the entire upper
surface WA simultaneously.
[0152] Water molecules dissociate into hydroxide ions (OH.sup.-)
and hydrogen ions (H.sup.+). By the flow of the processing liquid
102 and by the electric field between the substrate W and the
processing electrode 118, the density of the hydroxide ions,
produced by the dissociation of water molecules, increases in the
vicinity of the upper surface WA of the substrate W, whereby
reaction between the atoms of the copper film 6 and the hydroxide
ions and reaction between the atoms of the seed layer 7 and the
hydroxide ions can occur. The reaction products of these reactions
dissolve in the processing liquid 102 and, by the flow of the
processing liquid 102 along the to-be-placed surface of the
substrate W, are removed from the substrate W. Removal processing
of the copper film 6 and the seed layer 7 is thus effected.
[0153] It is desirable to use as the processing liquid a liquid
obtained by adding an additive, such as a surfactant, to water,
pure water or ultrapure water, and having an electric conductivity
of not more than 500 .mu.S/cm, preferably not more than 50
.mu.S/cm, more preferably not more than 10 .mu.S/cm, especially
preferably not more than 0.1 .mu.S/cm. The use of such a liquid
makes it possible to carry out clean processing, without leaving
impurities on the substrate surface WA, whereby a cleaning step for
cleaning the substrate W after the electrolytic processing can be
simplified.
[0154] Next, a description will be given of an electrolytic
processing method (substrate processing method) according to
another embodiment of the present invention by referring to FIGS.
7A, 7B and FIG. 9.
[0155] Taking a copper-plated substrate as an example, the seed
layer 7 is first formed over the entire substrate surface WA. Next,
the copper film 6 is formed in the effective device portion 533 of
the substrate surface WA. Accordingly, the film thus formed has a
step between the peripheral portion 532 and the effective device
portion 533 of the substrate surface WA. The processing electrode
218 and the feeding electrode 236 are moved close to the substrate
W so that the ion exchanger 235 gets positioned between the
substrate W and the processing electrode 218, and between the
substrate W and the feeding electrode 236. The processing liquid
202 as a fluid is supplied between the substrate W and the ion
exchanger 235. A voltage is applied from the power source 223 to
between the processing electrode 218 and the feeding electrode 236.
The processing electrode 218, the feeding electrode 236 and the ion
exchanger 235 are then moved relative to the substrate W. The
processing electrode 218, the feeding electrode 236 and the ion
exchanger 235 may be moved over the entire surface WA being
processed in a periodical manner.
[0156] Processing of the substrate W is terminated at the time when
the seed layer 7 in the peripheral portion 532 is completely
removed. By the processing, the film in the upper surface WA of the
substrate W is removed by an even thickness t over the entire upper
surface WA simultaneously.
[0157] With the provision of the ion exchanger 235 between the
substrate W and the processing electrode 218, and between the
substrate W and the feeding device 236, the electric processing
method of this embodiment can carry out an efficient electrolytic
processing. Further, since the substrate W is not utilized as a
feeding electrode, not only a conductive substrate W but also a
non-conductive substrate W can be processed.
[0158] A substrate processing system 401, which is provided with
the electrolytic processing apparatus (substrate processing
apparatus) 111 shown in FIG. 8, will now be described by referring
to FIG. 12. Though any of the electrolytic processing apparatus 511
shown in FIG. 6, the electrolytic processing apparatus 201 shown in
FIG. 9 and the chemical etching apparatus 311 shown in FIG. 11 may
be adopted, a case of adopting the electrolytic processing
apparatus 111 is herein taken as an example and will be described
by also referring to FIG. 8 as necessary. As shown in FIG. 12, the
substrate processing system 401 includes a pair of
loading/unloading sections 430 as a substrate carry-in-and-out
section for carrying in and out a substrate W (see FIG. 7A and FIG.
13B), a reversing machine 432 for reversing the substrate W, and
the electrolytic processing apparatus 111, which are disposed in
series. A transfer robot 438a as a transfer device is provided
which can move parallel to these apparatuses for transporting and
transferring the substrate W therebetween.
[0159] The substrate processing system 401 is also provided with a
control section 442 for monitoring a voltage applied between the
processing electrode 118 (see FIG. 8) and the substrate (feeding
electrode) W (see FIG. 8) upon electrolytic processing in the
electrolytic processing apparatus 111, or an electric current
flowing therebetween, and controlling at least one of the voltage
and the electric current independently. The substrate processing
system 401, with the provision of the electrolytic processing
apparatus 111, can perform in a simple manner an effective removal
processing of a substrate W, in which a film is formed in the
substrate surface WA such that the film has a step between the
peripheral portion 532 (see FIG. 7A) and the effective device
portion 533 (see FIG. 7A) of the substrate W, thereby removing the
film by a predetermined thickness over the entire surface WA
simultaneously, and securely removing the film in the peripheral
portion 532 while leaving the film in the effective device portion
533.
[0160] When the material of a substrate as a workpiece is copper,
molybdenum, iron, tungsten or the like, electrolytic processing
action occurs on the cathode side. Therefore, a voltage is applied
so that the processing electrode side becomes a cathode and the
substrate or feeding electrode side becomes an anode. Conversely,
when the material of a substrate is aluminum, silicon or the like,
electrolytic processing action occurs on the anode side. Therefore,
a voltage is applied so that the processing electrode side becomes
an anode and the substrate or feeding electrode side becomes a
cathode.
[0161] As described hereinabove, the present electrolytic
processing apparatuses shown in FIGS. 6 through 10 and the present
chemical etching apparatus shown in FIG. 11 both can perform in a
simple manner an effective removal processing of a substrate, in
which a film is formed in the surface such that the film has a step
between the peripheral portion and the effective device portion of
the substrate, thereby removing the film by a predetermined
thickness over the entire substrate surface simultaneously, and
securely removing the film in the peripheral portion and leaving
the film in the effective device portion.
[0162] The present application is available for PCT/JP02/01545,
filed on Feb. 21, 2002, the entire disclosure of which is hereby
incorporated by reference.
[0163] Although certain preferred embodiments of the present
invention have been shown and described in detail, it should be
understood that various changes and modifications may be made
therein without departing from the scope of the appended
claims.
INDUSTRIAL APPLICABILITY
[0164] This invention relates to a substrate processing apparatus
and method which can be utilized as a bevel-removal apparatus for
processing a conductive material or removing impurities adhering to
a peripheral portion (bevel portion or edge portion) of a
substrate, such as a semiconductor wafer, or which can be used for
carrying out a processing to remove a film formed on the surface of
a substrate.
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