U.S. patent application number 11/688041 was filed with the patent office on 2007-08-09 for etching liquid for controlling silicon wafer surface shape.
Invention is credited to Tomohiro Hashii, Yuichi Kakizono, Sakae Koyata, Katsuhiko Murayama.
Application Number | 20070184658 11/688041 |
Document ID | / |
Family ID | 36755390 |
Filed Date | 2007-08-09 |
United States Patent
Application |
20070184658 |
Kind Code |
A1 |
Koyata; Sakae ; et
al. |
August 9, 2007 |
Etching Liquid for Controlling Silicon Wafer Surface Shape
Abstract
A method for manufacturing a silicon wafer includes a
planarizing process 13 for polishing or lapping the upperside and
lowerside surfaces of a thin disk-shaped silicon wafer obtained by
slicing a silicon single crystal ingot, an etching process for
dipping the silicon wafer into the etching liquid wherein silica
powder is dispersed uniformly in an alkali aqueous solution,
thereby etching the upperside and lowerside surfaces of the silicon
wafer, and a both-side simultaneous polishing process 16 for
polishing the upperside and lowerside surfaces of the etched
silicon wafer simultaneously or a one-side polishing process for
polishing the upperside and lowerside surfaces of the etched
silicon wafer one after another, in this order.
Inventors: |
Koyata; Sakae; (Tokyo,
JP) ; Kakizono; Yuichi; (Tokyo, JP) ; Hashii;
Tomohiro; (Tokyo, JP) ; Murayama; Katsuhiko;
(Tokyo, JP) |
Correspondence
Address: |
REED SMITH, LLP;ATTN: PATENT RECORDS DEPARTMENT
599 LEXINGTON AVENUE, 29TH FLOOR
NEW YORK
NY
10022-7650
US
|
Family ID: |
36755390 |
Appl. No.: |
11/688041 |
Filed: |
March 19, 2007 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
11345009 |
Jan 31, 2006 |
|
|
|
11688041 |
Mar 19, 2007 |
|
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Current U.S.
Class: |
438/689 ; 216/88;
252/79.1; 257/E21.214; 257/E21.237 |
Current CPC
Class: |
C30B 33/10 20130101;
H01L 21/02008 20130101 |
Class at
Publication: |
438/689 ;
252/079.1; 216/088 |
International
Class: |
C09K 13/00 20060101
C09K013/00; C03C 15/00 20060101 C03C015/00; H01L 21/302 20060101
H01L021/302 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 31, 2005 |
JP |
2005-022764 |
Claims
1. An etching liquid for controlling a silicon wafer surface shape,
wherein silica powder is dispersed uniformly in an alkali aqueous
solution.
2. The etching liquid of claim 1, wherein the alkali aqueous
solution is a 40 to 50 weight % sodium hydroxide aqueous solution,
and the addition rate of the silica powder to be added to the
alkali aqueous solution is 1 to 100 g/L to the sodium
hydroxide.
3. The etching liquid of claim 1, wherein the average particle
diameter of the silica powder is 50 to 5000 nm.
4. (canceled)
5. (canceled)
6. The etching liquid of claim 2 wherein the average particle
diameter of the silica powder is from 500 nm (0.5 .mu.m) to 3000 nm
(3 .mu.m).
Description
CROSS-REFERENCES TO RELATED APPLICTION
[0001] This application claims priority of Japanese Application No.
2005-0022764 filed Jan. 31, 2005, the entire disclosure of whis is
hereby incorporated by reference.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to an etching liquid for
controlling a silicon wafer surface shape and a method for
manufacturing a silicon wafer using the same for reducing loads of
a both-side simultaneous polishing process, and attaining both a
high flatness degree and the reduction of surface roughness.
[0004] 2. Description of the Related Art
[0005] Generally, the manufacturing processes of a semiconductor
silicon wafer include processes of chamfering, mechanical polishing
(lapping), etching, mirror grinding (polishing) and cleaning on a
wafer that is cut and sliced from a silicon single crystal ingot
pulled up, and the wafer is manufactured into a wafer having a
highly precise flatness degree. A silicon wafer that goes through
mechanical manufacturing processes including block cutting, outer
diameter grinding, slicing, lapping and the like has a damaged
layer, i.e., a work-affected layer on the surface thereof. The
work-affected layer induces crystal defects such as a slip
dislocation and the like in the device manufacturing processes, and
decreases the mechanical strength of the wafer, and causes adverse
effects on the electrical characteristics thereof, and accordingly
such defects must be removed completely.
[0006] An etching process is performed so as to remove this
work-affected layer. In the etching process, either an acid etching
method or an alkali etching method is employed. In this etching
process, a plurality of wafers are dipped into an etching bath
containing an etching liquid, thereby the work-affected layer is
chemically removed.
[0007] The acid etching has advantages that there is no selective
etching property to a silicon wafer, and the surface roughness is
small, therefore, the micro shape precision is improved, and the
etching efficiency is high. As the etching liquid of this acid
etching, an etching liquid of three components obtained by thinning
mixed acid of hydrofluoric acid (HF) and nitric acid (HNO.sub.3) by
water (H.sub.2O) or acetic acid (CH.sub.3COOH) is mainly employed.
It is considered that the acid etching has the above advantages
because etching progresses on the basis of diffusion controlling
conditions by the above etching liquid, and under the diffusion
controlling conditions, the reaction speed does not depend upon the
crystal orientation of the crystal surface, crystal defects and the
like, and the diffusion on the crystal surface has a main effect.
However, in this acid etching, although the work-affected layer can
be etched while improving the surface roughness of a silicon wafer,
as the acid etching progresses, the outer circumferential portion
of the wafer becomes dull, and the flatness degree as micro shape
precision obtained by lapping is deteriorated, which causes
mm-order concaves and convexes called swells or peels on the etched
surface. Further, the cost of the chemical liquid is high, and it
is difficult to control and maintain the composition of the etching
liquid, which has been a problem in the prior art.
[0008] The alkali etching has advantages that the flatness degree
is excellent and the macro shape precision is improved, and there
is little metal contamination, and there is no problem of harmful
secondary products like NOx in the acid etching or no danger in
handling thereof. As the etching liquid of this alkali etching, KOH
and NaOH are employed. It is considered that the alkali etching has
the above advantages because this etching progresses basically on
the basis of diffusion controlling conditions. However, in the
alkali etching, although the work-affected layer can be etched
while maintaining the flatness degree of a silicon wafer, there
occur facets whose partial depth is several pm, and whose size is
several to several ten .mu.m (hereinafter, referred to as facets)
that deteriorates the wafer surface roughness, which has been
another problem in the prior art.
[0009] As a method to solve the problems in the alkali etching,
there is disclosed an etching method of a silicon wafer wherein an
etching liquid obtained by adding 0.01 to 0.2 weight percentage of
hydrogen peroxide to 100 weight percentage of a caustic soda
(sodium hydroxide) aqueous solution is employed (for example, see
Patent Document 1) According to the etching method disclosed in the
above Patent Document, by adding hydrogen peroxide to a caustic
soda aqueous solution at a specified percentage, nonconformities
arising in the alkali etching by the caustic soda aqueous solution
are solved. Specificially, in comparison with the etching using a
NaOH aqueous solution, the size of an etched pit on the lowerside
surface of a silicon wafer is made finer. Furthermore, the
occurrence of micro etched pits on the lowerside surface of the
silicon wafer is restricted, and the desired etching speed can be
adjusted easily and in a wide area, and furthermore, the etching
speed is increased.
[0010] Patent Document 1: Japanese Unexamined Patent Application
Publication No.H07-37871 (claims 1 to 4, paragraph [0021])
[0011] However, in the conventional methods including the method
disclosed in the above Patent Document, a wafer after the etching
process is sent to a both-side simultaneous polishing process and a
one-side polishing process wherein the surface thereof is processed
into a mirror surface. However, in the upperside and lowerside
surfaces of the silicon wafer after the etching process, the wafer
flatness degree obtained at completion of the planarizing process
is not maintained. Furthermore, a desired wafer surface roughness
is not obtained yet, and accordingly, in order to improve the wafer
flatness degree and the wafer surface roughness, it is necessary to
move or remove large amounts of grinding residue in the both-side
simultaneous polishing process and the one-side polishing process.
As a result, this creates additional time and energy loads on the
both-side simultaneous polishing process and the one-side polishing
process.
BRIEF SUMMARY OF THE INVENTION
[0012] Accordingly, the object of the present invention is to
provide an etching liquid for controlling a silicon wafer surface
shape and a method for manufacturing a silicon wafer using the same
for reducing the time and energy loads on the both-side
simultaneous polishing process and the one-side polishing process,
and attaining both a high flatness degree at completion of the
planarizing process and the reduction of surface roughness.
[0013] An invention according to claim 1 is an etching liquid for
controlling a silicon wafer surface shape, wherein silica powder is
dispersed uniformly in an alkali aqueous solution.
[0014] In the invention according to claim 1, the etching liquid
for controlling a silicon wafer surface shape, wherein silica
powder is dispersed uniformly in an alkali aqueous solution can
control the surface roughness and the texture size of a wafer
before polishing, and accordingly, by etching a silicon wafer
having a work-affected layer after the planarizing process by use
of this etching liquid, it is possible to reduce the polishing
removal amount in the upperside and lowerside surfaces of the wafer
in the both-side simultaneous polishing process and the one-side
polishing process, and further attain both the maintenance of a
high flatness degree of the wafer and the reduction of the wafer
surface roughness at completion of the planarizing process.
[0015] An invention according to claim 2 is one according to claim
1, and is an etching liquid wherein the alkali aqueous solution is
a 40 to 50 weight % sodium hydroxide aqueous solution, and the
addition rate of the silica powder to be added to the alkali
aqueous solution is 1 to 100 g/L to the sodium hydroxide.
[0016] In the invention according to claim 2, by adding silica
powder into the alkali aqueous solution within the above mentioned
concentration range in a given proportion, it is possible to more
easily maintain the high flatness degree of the wafer and to attain
the more reduced wafer surface roughness at complettion of the
etching process.
[0017] An invention according to claim 3 is one according to claim
1 or 2, and is an etching liquid wherein the average particle
diameter of the silica powder is 50 to 5000 nm.
[0018] An invention according to claim 4 is a method for
manufacturing a silicon wafer as shown in FIG. 1 including a
planarizing process 13 for polishing or lapping the upperside and
lowerside surfaces of a thin disk-shaped silicon wafer obtained by
slicing a silicon single crystal ingot, an etching process 14 for
dipping the silicon wafer into the etching liquid according to any
one of claims 1 to 3, thereby etching the upperside and lowerside
surfaces of the silicon wafer, and a both-side simultaneous
polishing process 16 for polishing the upperside and lowerside
surfaces of the etched silicon wafer simultaneously, in this
order.
[0019] In the invention according to claim 4, by the etching
process 14 by use of an etching liquid adjusted by adding silica
powder to an alkali aqueous solution, the surface roughness and the
texture size of a wafer before polishing can be controlled, and
accordingly, in the both-side simultaneous polishing process 16, it
is possible to reduce the polishing removal amount in the upperside
and lowerside surfaces of the wafer, and further attain both the
maintenance of a high flatness degree of the wafer at completion of
the planarizing process and the reduction of the wafer surface
roughness.
[0020] An invention according to claim 5 is a method for
manufacturing a silicon wafer including a planarizing process for
polishing or lapping the upperside and lowerside surfaces of a thin
disk-shaped silicon wafer obtained by slicing a silicon single
crystal ingot, an etching process for dipping the silicon wafer
into the etching liquid according to any one of claims 1 to 3,
thereby etching the upperside and lowerside surfaces of the silicon
wafer, and a one-side polishing process for polishing the upperside
and lowerside surfaces of the etched silicon wafer one after
another, in this order.
[0021] In the invention according to claim 5, by the etching
process by use of an etching liquid adjusted by adding silica
powder to an alkali aqueous solution, the surface roughness and the
texture size of a wafer before polishing can be controlled, and
accordingly, in the one-side polishing process, it is possible to
reduce the polishing removal amount in the upperside and lowerside
surfaces of the wafer, and further attain both the maintenance of a
high flatness degree of the wafer at completion of the planarizing
process and the reduction of the wafer surface roughness.
[0022] The etching liquid for controlling a silicon wafer surface
shape of the present invention is an etching liquid wherein silica
powder is dispersed uniformly in an alkali aqueous solution, and
this etching liquid can control the surface roughness and the
texture size of a wafer before polishing, and accordingly, by
etching a silicon wafer having a work-affected layer after the
planarizing process by use of this etching liquid, it is possible
to reduce the polishing removal amount in the upperside and
lowerside surfaces of the wafer in the both-side simultaneous
polishing process and the one-side polishing process, and further
attain both the maintenance of a high flatness degree of the wafer
at completion of the planarizing process and the reduction of the
wafer surface roughness.
[0023] Further, in the method for manufacturing a silicon wafer, by
the etching process by use of an etching liquid adjusted by adding
silica powder to an alkali aqueous solution, the surface roughness
and the texture size of a wafer before polishing can be controlled,
and accordingly, it is possible to reduce the polishing removal
amount in the upperside and lowerside surfaces of the wafer in the
both-side simultaneous polishing process and the one-side polishing
process, and further attain both the maintenance of a high flatness
degree of the wafer at completion of the planarizing process and
the reduction of the wafer surface roughness.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] FIG. 1 is a process chart showing a method for manufacturing
a silicon wafer according to the present invention.
[0025] FIG. 2 is a top view showing a grinding device.
[0026] FIG. 3 is a horizontal cross sectional view showing the
grinding device.
[0027] FIG. 4 is a structural view showing a lapping device.
[0028] FIG. 5 is a figure showing an etching process.
[0029] FIG. 6 is a structural view showing a both-side simultaneous
grinding device.
[0030] FIG. 7 is a cross sectional view of a wafer for explaining
how to obtain Ra.
[0031] FIG. 8 is a cross sectional view of a wafer for explaining
how to obtain Rmax.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0032] Preferred embodiments according to the present invention are
illustrated in more details with reference to the attached drawings
hereinafter.
[0033] The etching liquid for controlling a silicon wafer surface
shape of the present invention is an etching liquid wherein silica
powder is dispersed uniformly in an alkali aqueous solution. This
etching liquid wherein silica powder is dispersed uniformly in an
alkali aqueous solution affects metal impurities and the like in a
chemical liquid by adding silica powder and restricts selectivity
peculiar to alkali etching, thereby can control the surface
roughness and the texture size of a wafer before polishing, and
accordingly, by etching a silicon wafer having a work-affected
layer after the planarizing process by use of this etching liquid,
it is possible to reduce the polishing removal amount in the
upperside and lowerside surfaces of the wafer in the both-side
simultaneous polishing process and the one-side polishing process,
and further attain both the maintenance of a high flatness degree
of the wafer at completion of the planarizing process and the
reduction of the wafer surface roughness.
[0034] The etching liquid of the present invention is obtained by
adding silica powder to an alkali aqueous solution adjusted to a
specified concentration at a specified rate, stirring this added
liquid, and dispersing the silica powder uniformly in the alkali
aqueous solution. As the alkali aqueous solution to be included in
the etching liquid of the present invention, there are potassium
hydroxide and sodium hydroxide, and especially among them, a 40 to
50 weight % sodium hydroxide aqueous solution that reduces the
surface roughness and restricts the texture size is preferable.
Further, it is preferable that the addition rate of the silica
powder to be added to this 40 to 50 weight % sodium hydroxide
aqueous solution is in the rage of 1 to 100 g/L to the sodium
hydroxide, because after the etching process, the high wafer
flatness degree can be maintained more easily and the wafer surface
roughness can be more reduced. Especially, it is preferable to make
the addition rate to the range of 5 to 10 g/L to sodium hydroxide.
As the silica powder to be used in the etching liquid of the
present invention, silica powder whose average particle diameter is
in the range of 50 to 5000 nm is preferable. If the average
particle diameter is below 50 nm, there occurs a nonconformity in
the affection to the metal impurities in the alkali aqueous
solution, and if the average particle diameter is over 5000 mm (5
.mu.m), there occurs a nonconformity that silica powder dispersed
in the alkali aqueous solution becomes massed together. The
especially preferable average particle diameter of the silica
powder is 500 nm (0.5 .mu.m) to 3000 nm (3 .mu.m).
[0035] Next, the method for manufacturing a silicon wafer by use of
the etching liquid for controlling a silicon wafer surface shape of
the present invention is explained hereinafter.
[0036] First, the fore-end portion and the aft-end portion of a
grown silicon single crystal ingot are cut and the ingot is made
into a block shape, and the outer diameter of the ingot is grinded
so as to make the diameter of the ingot uniform and the ingot is
made into a block body. In order to show a specific crystal
orientation, orientation flats and orientation notches are made on
this block body. After this process, as shown in FIG. 1, the block
body is sliced with a specified angle to the bar axis direction
(step 11). The circumference of a wafer sliced at the step 11 is
chamfered so as to prevent cracks and chips in the circumferential
portion of the wafer (step 12). By performing this chamfering
process, it is possible to restrict for example a crown phenomenon
wherein an erroneous growth occurs on the circumferential portion
at epitaxial growth on a silicon wafer that is not chamfered and
embossment occurs in a ring shape.
[0037] Next, the concave and convex layers on the upperside and
lowerside surfaces of the thin disk-shaped silicon wafer that have
occurred in the slicing process and the like are planarized flat
and the flatness degree of the upperside and lowerside surfaces of
the wafer and the parallel degree of the wafer are increased (step
13). In this planarizing process 13, the upperside and lowerside
surfaces of the wafer are planarized by grinding or lapping.
[0038] As a method to planarize a wafer by grinding, the wafer is
grinded by use of a grinding device 20 as shown in FIG. 2 and FIG.
3. As shown in FIG. 2, a turn table 22 as a wafer supporting unit
for loading a silicon wafer 21 thereon is structured so as to
rotate around a vertical axis by a driving mechanism not
illustrated therein. Above the turn table 22, as shown in FIG. 3,
to the silicon wafer 21 absorbed and loaded on the turn table 22
via a chuck 22a, a grinding stone supporting means 24 for
supporting a grinding stone 23 is arranged so as to press the
grinding surface thereof. This grinding stone supporting means 24
is structured so as to rotate the grinding stone 23 around the
vertical axis by a driving mechanism not illustrated therein.
Further, above the silicon wafer, a water supply nozzle 26 for
supplying grinding water onto the surface of the silicon wafer at
grinding is arranged. In such a grinding device 20, the grinding
stone 23 and the silicon wafer 21 are relatively rotated by the
respective driving mechanisms, further the grinding water is
supplied from the water supply nozzle 26 to the portion out of the
contact portion with the grinding stone 23 on the surface of the
silicon wafer 21, and the surface of the silicon wafer 21 is
cleaned while the grinding stone 23 is pressed onto the surface of
the silicon wafer 21 to grind it.
[0039] Further, as a method to planarize a wafer by lapping, the
wafer is planarized by use of a lapping device 30 as shown in FIG.
4. As shown in FIG. 4, first, a carrier plate 31 is engaged with a
sun gear 37 and an internal gear 38 of the lapping device 30, and
the silicon wafer 21 is set into a holder of the carrier plate 31.
Thereafter, both of the surfaces of this silicon wafer 21 is held
so as to be pinched by an upper surface table 32 and a lower
surface table 33, and a grinding agent 36 is supplied from a nozzle
34, and the carrier plate 31 is moved in a sun-and-planet motion by
the sun gear 37 and the internal gear 38, and at the same time, the
upper surface table 32 and the lower surface table 33 are rotated
relatively, thereby both of the surfaces of the silicon wafer 21
are lapped simultaneously. In this manner, the silicon wafer after
the planarizing process 13, wherein the flatness degree of the
upperside and lowerside surfaces of the wafer and the parallel
degree of the wafer are increased, is cleaned in the cleaning
process and sent to the next process.
[0040] Next, referring back to FIG. 1, the planarized silicon wafer
is dipped into an etching liquid and the upperside and lowerside
surfaces of the silicon wafer are etched (step 14). The etching
liquid used herein is the etching liquid for controlling a silicon
wafer surface shape according to the present invention. In this
etching process 14, the work-affected layer introduced by the
mechanical processes such as the chamfering process 12 and the
planarizing process is removed completely by etching. By etching
using the etching liquid for controlling a silicon wafer surface
shape according to the present invention adjusted by adding silica
powder, the surface roughness and the texture size of the wafer can
be controlled, and accordingly, it is possible to reduce the
polishing removal amount in the upperside and lowerside surfaces of
the wafer in the both-side simultaneous polishing process 16 and
the one-side polishing process following thereto, and further
attain both the maintenance of a high flatness degree of the wafer
and the reduction of the wafer surface roughness at completion of
the planarizing process. It is preferable that the etching removal
depth in the etching process 14 is 8 to 10 .mu.m for each surface,
and the total removal depth for the upperside and lowerside
surfaces of the wafer is 16 to 20 .mu.m. By setting the etching
removal depth in the above range, it is possible to greatly reduce
the grinding removal amount in the following both-side simultaneous
polishing process and the one-side polishing process. If the
etching removal depth is below the lower limit value, the wafer
surface roughness is not reduced sufficiently, loads in the
both-side simultaneous polishing process and the one-side polishing
process become large, meanwhile, if the etching removal depth is
above the upper limit value, the wafer flatness degree is
deteriorated and productivity in the wafer manufacture is
decreased.
[0041] In this etching process 14, as shown in FIG. 5, first, a
plurality of wafers 41a are held vertically in a holder 41, and
this holder 41 is lowered as shown by a solid line arrow in FIG. 5,
and dipped into the etching liquid 42a for controlling a silicon
wafer surface shape according to the present invention stored in an
etching bath 42 and the work-affected layer of the wafer surface is
removed by the etching liquid. Then, the holder 41 wherein the
wafers 41a dipped in the etching liquid 42a for a specified time is
pulled up as shown in a dot line arrow in FIG. 5. Next, the holder
41 wherein the wafers 41a after the etching process are held is
lowered as shown by the solid line arrow in FIG. 5, and dipped into
a rinse liquid 43a such as pure water or the like stored in a rinse
bath 43 and the etching liquid attaching to the wafer surface is
removed. Thereafter, the holder 41 wherein the wafers 41a dipped in
the rinse liquid 43a for a specified time is pulled up as shown by
the dot line arrow in FIG. 5, and the silicon wafer is dried.
[0042] Next, referring back to FIG. 1, the both-side simultaneous
polishing process for polishing the upperside and lowerside
surfaces of the wafer after the etching process 14 simultaneously
is carried out (step 16).
[0043] As a method to polish the upperside and lowerside surfaces
simultaneously, polishing is carried out by use of a both-side
simultaneous polishing device 50 as shown in FIG. 6. As shown in
FIG. 6, first, a carrier plate 51 is engaged with a sun gear 57 and
an internal gear 58 of the both-side simultaneous polishing device
50, and the silicon wafer 21 is set into a holder of the carrier
plate 51. Thereafter, both of the surfaces of this silicon wafer 21
is held so as to be pinched by an upper surface table 52 to which a
first grinding cloth 52a is attached to the polishing surface side
thereof and a lower surface table 53 to which a second grinding
cloth 53a is attached, and a grinding agent 56 is supplied from a
nozzle 54, and the carrier plate 51 is moved in a sun-and-planet
motion by the sun gear 57 and the internal gear 58, and at the same
time, the upper surface table 52 and the lower surface table 53 are
rotated relatively, thereby both of the surfaces of the silicon
wafer 21 are mirror-polished simultaneously. Further, in this
both-side simultaneous polishing process 16, the rotation speeds of
upper surface table 52 and the lower surface table 53 are
controlled respectively and the both of the surfaces of the silicon
wafer are polished simultaneously, thereby, it is possible to
obtain a one-side mirror surface wafer whose upperside and
lowerside surfaces can be identified by visual inspection. By
performing the method for manufacturing a silicon wafer according
to the present invention as mentioned above, productivity in the
wafer manufacture can be improved to a great extent.
[0044] Meanwhile, in the aspect of the present preferred
embodiment, the upperside and lowerside surfaces of the wafer are
polished simultaneously, however, it will be known to those skilled
in the art that, instead of this both-side simultaneous polishing,
by one-side polishing wherein the upperside and lowerside surfaces
of the wafer are polished one after another, the same effect can be
attained.
EXAMPLE
[0045] Examples according to the present invention are explained in
more details together with comparative examples hereinafter.
Examples 1 to 4
[0046] First, a plurality of .phi.200 mm silicon wafers were
prepared, and as a planarizing process, the upperside and lowerside
surfaces of the silicon wafer were lapped by use of a lapping
device shown in FIG. 4. As a polishing agent in the lapping
process, a polishing agent whose count was #1500 including
Al.sub.2O.sub.3 was employed, and the flow rate of the polishing
agent used was controlled at 2.0 L/min, and the load of the upper
surface table was controlled at 70 g/cm.sup.2, and the rotation
speed of the upper surface table was controlled at 10 rpm, and the
rotation speed of the lower surface table was controlled at 40 rpm,
and the silicon wafer was planarized. Next, the silicon wafer after
being planarized was etched by use of the etching device shown in
FIG. 5. As etching liquids, four kinds of etching liquids wherein
silica powder whose average particle diameter was 2 to 5 .mu.m was
mixed to 51 weight % sodium hydroxide and adjusted to be 1 g/L, 5
g/L, 10 g/L and 100 g/L respectively to the sodium hydroxide were
employed. In this etching process, the silicon wafer was dipped in
the etching liquid for 15 minutes and etched therein. The etching
removal depth in this etching was 10 .mu.m for one side of the
wafer, and 20 .mu.m for both the sides of the wafer.
Examples 5 to 8
[0047] The planarizing process and the etching process were
performed in the same manner as examples 1 to 4 except that the
alkali aqueous solution to be used in the etching liquid in the
etching process was replaced with 48 weight % sodium hydroxide
aqueous solution.
Comparative Examples 1 to 3
[0048] The planarizing process and the etching process were
performed in the same manner as example 1 except that as alkali
aqueous solutions, three kinds of chemical liquids composed of only
51 weight % sodium hydroxide were prepared, and the chemical
liquids were used as etching liquids in the etching process as they
were. Namely, silica powder was not added to the etching
liquids.
Comparative Examples 4 to 6
[0049] The planarizing process and the etching process were
performed in the same manner as example 1 except that as alkali
aqueous solutions, three kinds of chemical liquids composed of only
48 weight % sodium hydroxide were prepared, and the chemical
liquids were used as etching liquids in the etching process as they
were. Namely, silica powder was not added to the etching
liquids.
Examples 9 to 16
[0050] The planarizing process and the etching process were
performed in the same manner as examples 1 to 8 except that the
load of the upper surface table of the lapping device in the
lapping process was controlled at 100 g/cm.sup.2 and the silicon
wafer was planarized.
Comparative Examples 7 to 12
[0051] The planarizing process and the etching process were
performed in the same manner as comparative examples 1 to 6 except
that the load of the upper surface table of the lapping device in
the lapping process was controlled at 100 g/cm.sup.2 and the
silicon wafer was planarized.
Examples 17 to 24
[0052] The planarizing process and the etching process were
performed in the same manner as examples 1 to 8 except that as a
polishing agent in the lapping process, a polishing agent whose
count was #1000 including Al.sub.2O.sub.3 was employed, and the
load of the upper surface table of the lapping device was
controlled at 100 g/cm.sup.2 and the silicon wafer was
planarized.
Comparative Examples 13 to 18
[0053] The planarizing process and the etching process were
performed in the same manner as comparative examples 1 to 6 except
that as a polishing agent in the lapping process, a polishing agent
whose count was #1000 including Al.sub.2O.sub.3 was employed, and
the load of the upper surface table of the lapping device was
controlled at 100 g/cm.sup.2 and the silicon wafer was
planarized.
Examples 25 to 28
[0054] The planarizing process and the etching process were
performed in the same manner as Examples 1 to 4 except that the
load of the upper surface table of the lapping device in the
lapping process was controlled at 100 g/cm.sup.2 and the silicon
wafer was planarized, and the alkali aqueous solution to be used in
the etching liquid in the etching process was replaced with 48
weight % sodium hydroxide aqueous solution.
Examples 29 to 32
[0055] The planarizing process and the etching process were
performed in the same manner as examples 1 to 4 except that as a
polishing agent in the lapping process, a polishing agent whose
count was #1000 including Al.sub.2O.sub.3 was employed, and the
load of the upper surface table of the lapping device was
controlled at 100 g/cm.sup.2 and the silicon wafer was planarized,
and the alkali aqueous solution to be used in the etching liquid in
the etching process was replaced with 48 weight % sodium hydroxide
aqueous solution.
Comparative Examples 19 to 21
[0056] The planarizing process and the etching process were
performed in the same manner as comparative examples 1 to 3 except
that as a polishing agent in the lapping process, a polishing agent
whose count was #1000 including Al.sub.2O.sub.3 was employed, and
the alkali aqueous solution to be used in the etching liquid in the
etching process was replaced with 48 weight % sodium hydroxide
aqueous solution.
Comparative Examples 22 to 24
[0057] The planarizing process and the etching process were
performed in the same manner as comparative examples 1 to 3 except
that as a polishing agent in the lapping process, a polishing agent
whose count was #1000 including Al.sub.2O.sub.3 was employed, and
the load of the upper surface table of the lapping device was
controlled at 100 g/cm.sup.2 and the silicon wafer was planarized,
and the alkali aqueous solution to be used in the etching liquid in
the etching process was replaced with 48 weight % sodium hydroxide
aqueous solution.
<Comparison Test 1>
[0058] To the silicon wafers obtained in examples 1 to 32 and
comparative examples 1 to 24, the wafer surface roughness thereof
was measured by use of a non contact surface roughness gauge
(manufactured by Chapman), and Ra and Rmax as the basic parameters
of wafer surface shapes were obtained respectively. The
mathematical average roughness Ra as the amplitude average
parameter in the height direction is expressed by the average of
the absolute values of Z (x) in the standard length, when the
standard length is defined as 1r, as shown in the following
equation (1). Ra = 1 lr .times. .intg. 0 lr .times. Z .function. (
x ) .times. d x ( 1 ) ##EQU1##
[0059] Further, the maximum cross sectional height Rmax of a
roughness curve as the parameter of the peak and the bottom in the
height direction is expressed by the sum of the maximum value of
the peak height Zp of a outline curve in the evaluation length in
and the maximum value of the bottom depth Zv, in the wafer surface
shown in FIG. 8, as shown in the following equation. In FIG. 8, the
maximum value of the peak height Zp is ZP.sub.6, and the maximum
value of the bottom depth Zv is Zv.sub.4. Rmax=max(Zpi)+max(Zvi)
(2)
[0060] The results of Ra and Rmax in the silicon wafers obtained in
examples 1 to 32 and comparative examples 1 to 24 are shown in
Table 1 to Table 4 respectively. TABLE-US-00001 TABLE 1 Lapping
process Etching process Load of Concentration Kind of Wafer surface
Count of upper surface of alkali alkali Addition roughness after
polishing table aqueous aqueous rate of silica etching process
agent [g/cm.sup.2] solution solution powder Ra [mm] Rmax [.mu.m]
Example 1 #1500 70 51 weight % NaOH 1 g/L 185 1.81 Example 2 5 g/L
183 1.75 Example 3 10 g/L 180 1.72 Example 4 100 g/L 175 1.65
Example 5 48 weight % NaOH 1 g/L 246 2.36 Example 6 5 g/L 243 2.28
Example 7 10 g/L 233 2.24 Example 8 100 g/L 231 2.15 Comparative
#1500 70 51 weight % NaOH -- 191 1.91 Example 1 Comparative -- 197
1.93 Example 2 Comparative -- 211 1.95 Example 3 Comparative 48
weight % NaOH -- 258 2.51 Example 4 Comparative -- 267 2.48 Example
5 Comparative -- 251 2.55 Example 6
[0061] TABLE-US-00002 TABLE 2 Lapping process Etching process Load
of Concentration Kind of Wafer surface Count of upper surface of
alkali alkali Addition roughness after polishing table aqueous
aqueous rate of silica etching process agent [g/cm.sup.2] solution
solution powder Ra [mm] Rmax [.mu.m] Example 9 #1500 100 51 weight
% NaOH 1 g/L 236 2.15 Example 10 5 g/L 233 2.08 Example 11 10 g/L
229 2.05 Example 12 100 g/L 223 1.96 Example 13 48 weight % NaOH 1
g/L 310 2.65 Example 14 5 g/L 306 2.56 Example 15 10 g/L 294 2.52
Example 16 100 g/L 291 2.41 Comparative #1500 100 51 weight % NaOH
-- 250 2.30 Example 7 Comparative -- 255 2.25 Example 8 Comparative
-- 258 2.34 Example 9 Comparative 48 weight % NaOH -- 320 2.80
Example 10 Comparative -- 328 2.75 Example 11 Comparative -- 330
2.92 Example 12
[0062] TABLE-US-00003 TABLE 3 Lapping process Etching process Load
of Concentration Kind of Wafer surface Count of upper surface of
alkali alkali Addition roughness after polishing table aqueous
aqueous rate of silica etching process agent [g/cm.sup.2] solution
solution powder Ra [mm] Rmax [.mu.m] Example 17 #1000 100 51 weight
% NaOH 1 g/L 332 3.33 Example 18 5 g/L 328 3.22 Example 19 10 g/L
323 3.16 Example 20 100 g/L 314 3.03 Example 21 48 weight % NaOH 1
g/L 395 3.55 Example 22 5 g/L 390 3.44 Example 23 10 g/L 374 3.38
Example 24 100 g/L 371 3.24 Comparative #1000 100 51 weight % NaOH
-- 355 3.52 Example 13 Comparative -- 361 3.54 Example 14
Comparative -- 359 3.58 Example 15 Comparative 48 weight % NaOH --
410 3.74 Example 16 Comparative -- 415 3.76 Example 17 Comparative
-- 420 3.87 Example 18
[0063] TABLE-US-00004 TABLE 4 Lapping process Etching process Load
of Concentration Kind of Wafer surface Count of upper surface of
alkali alkali Addition roughness after polishing table aqueous
aqueous rate of silica etching process agent [g/cm.sup.2] solution
solution powder Ra [mm] Rmax [.mu.m] Example 25 #1500 100 48 weight
% KOH 1 g/L 327 3.45 Example 26 5 g/L 324 3.34 Example 27 10 g/L
319 3.28 Example 28 100 g/L 310 3.15 Example 29 #1000 100 48 weight
% KOH 1 g/L 483 5.02 Example 30 5 g/L 478 4.85 Example 31 10 g/L
470 4.77 Example 32 100 g/L 475 4.57 Comparative #1500 100 48
weight % KOH -- 351 3.67 Example 19 Comparative -- 355 3.68 Example
20 Comparative -- 354 3.70 Example 21 Comparative #1000 100 48
weight % KOH -- 510 5.35 Example 22 Comparative -- 523 5.25 Example
23 Comparative -- 530 5.45 Example 24
[0064] As is clear from Tables 1 to 4, in the comparison of
examples 1 to 32 wherein the silica powder was added to the alkali
aqueous solution, and comparative examples 1 to 24 wherein the
silica powder was not added to the alkali aqueous solution, among
the wafers that were planarized under the same conditions, it is
known that the results of Ra and Rmax decrease in examples 1 to 32.
From this result, a result has been obtained that, by using the
etching liquid wherein the silica powder is added to the alkali
aqueous solution, the wafer surface roughness and the wafer
flatness degree are improved respectively, and it is possible to
greatly reduce the grinding removal amount in the both-side
simultaneous polishing process following thereto. Furthermore, in
the comparison of the results of examples 1 to 32, a tendency that
as the addition amount of the silica powder to be added to the
alkali aqueous solution is higher, so the results of Ra and Rmax
decrease respectively has been obtained.
Examples 33 to 35
[0065] First, a plurality of .phi.200 mm silicon wafers were
prepared, and as a planarizing process, the upperside and lowerside
surfaces of the silicon wafer were lapped in the same manner as
example 1. Next, to the wafer after lapping, by use of the grinding
device shown in FIG. 2 and FIG. 3, final grinding was carried out
on the silicon wafer surface. As the grinding conditions, the
grinding count of the grinding stone was set #2000, the diamond
distribution central particle diameter was 3 to 4 .mu.m, the
rotation speed of the spindle (wheel) was 4800 rpm, the feed speed
was 0.3 .mu.m/sec, the rotation speed of the wafer (wafer chuck)
was 20 rpm, and the processing removal amount was set 10 .mu.m or
below. Next, as an etching process, as an etching process, the
silicon wafer after being planarized was etched by use of the
etching device shown in FIG. 5. As etching liquids, three kinds of
etching liquids wherein silica powder whose average particle
diameter was 2 to 5 .mu.m was mixed to 48 weight % sodium hydroxide
and adjusted to be 1 g/L, 10 g/L and 100 g/L respectively to the
sodium hydroxide were employed. In this etching process, the
silicon wafer was dipped in the etching liquid for 15 minutes and
etched therein. The etching removal depth in this etching was 2.5
.mu.m for one side of the wafer, and 5 .mu.m for both the sides of
the wafer.
Comparative Examples 25 to 27
[0066] The planarizing process and the etching process were
performed in the same manner as examples 33 to 35 except that as
alkali aqueous solutions, three kinds of chemical liquids composed
of only 48 weight % sodium hydroxide were prepared, and the
chemical liquids were used as etching liquids in the etching
process as they were. Namely, silica powder was not added to the
etching liquids.
<Comparison Test 2>
[0067] To the silicon wafers obtained in examples 33 to 35 and
comparative examples 25 to 27, the wafer surface roughness thereof
was measured by use of a non contact surface roughness gauge
(manufactured by Chapman), and Ra and Rmax as the basic parameters
of wafer surface shapes were obtained respectively. The results of
Ra and Rmax in the silicon wafers obtained in examples 33 to 35 and
comparative examples 25 to 27 are shown in Table 5 respectively.
TABLE-US-00005 TABLE 5 Lapping process Etching process Load of
Concentration Kind of Wafer surface Count of upper surface Finish
of alkali alkali Addition roughness after polishing table grinding
aqueous aqueous rate of silica etching process agent [g/cm.sup.2]
process solution solution powder Ra [mm] Rmax [.mu.m] Example 33
#1000 100 Count of 48 weight % NaOH 1 g/L 30.0 0.25 Example 34
grinding: 10 g/L 20.0 0.20 Example 35 #2000 100 g/L 16.0 0.15
Diamond distribution central particle diameter: 3 to 4 .mu.m
Comparative #1000 100 Count of 48 weight % NaOH -- 31.0 0.27
Example 25 grinding: Comparative #2000 -- 31.5 0.28 Example 26
Diamond Comparative distribution -- 32.2 0.28 Example 27 central
particle diameter: 3 to 4 .mu.m
[0068] As is clear from Table 5, in the comparison of examples 33
to 35 wherein the silica powder was added to the alkali aqueous
solution, and comparative examples 25 to 27 wherein the silica
powder was not added to the alkali aqueous solution, among the
wafers that were planarized under the same conditions, it is known
that the results of Ra and Rmax decrease in examples 33 to 35. From
this result, a result has been obtained that, by using the etching
liquid wherein the silica powder is added to the alkali aqueous
solution, the wafer surface roughness and the wafer flatness degree
are improved respectively, and it is possible to greatly reduce the
grinding removal amount in the both-side simultaneous polishing
process following thereto. Furthermore, a tendency that as the
addition amount of the silica powder to be added to the alkali
aqueous solution is higher, so the results of Ra and Rmax decrease
respectively has been obtained.
* * * * *