U.S. patent application number 11/554567 was filed with the patent office on 2007-03-29 for integrated inductor structure and method of fabrication.
Invention is credited to Henning Braunisch, Ankur Mohan Crawford, Rajendran Nair, Gilroy Vandentop, Shan X. Wang.
Application Number | 20070069333 11/554567 |
Document ID | / |
Family ID | 36206694 |
Filed Date | 2007-03-29 |
United States Patent
Application |
20070069333 |
Kind Code |
A1 |
Crawford; Ankur Mohan ; et
al. |
March 29, 2007 |
INTEGRATED INDUCTOR STRUCTURE AND METHOD OF FABRICATION
Abstract
An inductor structure comprised of a magnetic section and a
single turn solenoid The single turn solenoid to contain within a
portion of the magnetic section and circumscribed by the magnetic
section.
Inventors: |
Crawford; Ankur Mohan; (New
York, NY) ; Braunisch; Henning; (Chandler, AZ)
; Nair; Rajendran; (Gilbert, AZ) ; Vandentop;
Gilroy; (Tempe, AZ) ; Wang; Shan X.; (Portola
Valley, CA) |
Correspondence
Address: |
BLAKELY SOKOLOFF TAYLOR & ZAFMAN
12400 WILSHIRE BOULEVARD
SEVENTH FLOOR
LOS ANGELES
CA
90025-1030
US
|
Family ID: |
36206694 |
Appl. No.: |
11/554567 |
Filed: |
October 30, 2006 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10975552 |
Oct 27, 2004 |
|
|
|
11554567 |
Oct 30, 2006 |
|
|
|
Current U.S.
Class: |
257/531 ;
257/E21.022; 257/E23.062 |
Current CPC
Class: |
H01L 2224/16 20130101;
H05K 2201/086 20130101; H01L 2924/15311 20130101; H01L 23/49822
20130101; H05K 2201/09563 20130101; H01L 2924/00011 20130101; H05K
3/4644 20130101; H01L 2924/01078 20130101; H01L 2224/0401 20130101;
H01L 23/645 20130101; H05K 1/165 20130101; H01L 2924/3011 20130101;
H01L 2924/00014 20130101; H01F 41/046 20130101; H05K 1/0373
20130101; H01L 2224/0401 20130101; H01L 2924/00014 20130101; H01L
2924/15312 20130101; H01L 2224/16235 20130101; H01L 2924/00011
20130101; H01L 28/10 20130101; H01L 2924/01077 20130101; H01F
17/0033 20130101 |
Class at
Publication: |
257/531 |
International
Class: |
H01L 29/00 20060101
H01L029/00 |
Claims
1. A method of forming an inductor structure comprising: forming an
open conductive loop; and forming a magnetic material contained
within said open conductive loop and to encompass said open
conductive loop.
2. A method of forming an inductor structure of claim 1 used to
form an inductor in a build-up packaging layer of an integrated
circuit package.
3. A method of forming an inductor structure of claim 1 coupled to
an integrated device.
4. A method of forming an inductor comprising: forming a magnetic
layer; and forming a single turn solenoid to contain within a
portion of said magnetic layer and circumscribed by said magnetic
layer.
5. The method of claim 4 wherein said magnetic layer consists of
CoFHfO.
6. The method of claim 4 wherein said single turn solenoid consists
of copper.
7. The method of claim 6 used to form an inductor in a build-up
packaging layer of an integrated circuit package.
8. The method of claim 4 wherein the magnetic layer is formed by a
laminating technique.
9. A method of forming an inductor comprising: forming a metal
layer; shaping said metal layer to form a bowl shape; and forming a
magnetic layer onto and around said metal layer.
10. The method of claim 9 wherein said metal layer consists of
copper.
11. The method of claim 9 wherein said magnetic layer is formed by
a sputtering technique.
12. The method of claim 9 wherein said magnetic layer has a
permeability of about 300.
13. The method of claim 12 used to form an inductor in a build-up
packaging layer of an integrated circuit package and coupled to an
integrated device.
14. A method of forming an inductor structure comprising: forming a
first conductive layer; forming a magnetic layer over said first
conductive layer; forming a first conductive sidewall and a second
conductive sidewall through said magnetic layer and adjoined to
said first conductive layer; forming a first conductive portion
adjoined to said first conductive sidewall, said first conductive
portion formed opposite said magnetic layer from said first
conductive layer; and forming a second conductive portion adjoined
to said second conductive sidewall, said second portion formed
opposite said magnetic layer from said first conductive layer.
15. The method of forming an inductor structure of claim 14 further
comprising planarizing said magnetic layer.
16. The method of forming an inductor structure of claim 14 wherein
the first conductive layer is formed by an electroplating
technique.
17. The method of forming an inductor structure of claim 14 wherein
said first conductive sidewall and said second conductive sidewall
are formed by vias.
18. A method of forming an inductor on a package substrate, said
method comprising: forming a first seed layer on the package
substrate; electroplating a first conductive layer on said
substrate; depositing a layer having magnetic properties over said
first conductive layer; laser drilling a via array in said layer
having magnetic properties to form opposite first and second
sidewalls coupled to said first conductive layer; forming a second
seed layer on said via array and said layer having magnetic
properties; forming a dry film resist over said second seed layer;
creating openings in said dry film resist in predetermined
locations; electroplating a second conductive layer in said
openings; and removing said dry film resist and said second seed
layer.
19. The method of claim 18 used to form an inductor coupled to an
integrated circuit die and a voltage regulator module.
20. The method of claim 19, wherein said layer having magnetic
properties is a magneto-dielectric material with a relative
permeability of approximately 300.
21. A method of forming an inductor structure into an array
comprising: forming a plurality of magnetic sections; and forming a
plurality of single turn solenoids, each one of said plurality of
single turn solenoids to contain within a portion of one of said
plurality of said magnetic sections and circumscribed by one of
said plurality of magnetic sections.
22. The method of forming an inductor structure into an array of
claim 21 further including the step of forming a dielectric
material between said plurality of magnetic sections.
23. The method of forming an inductor structure into an array of
claim 22 wherein said dielectric material is selected from a group
consisting of an Ajinomoto buildup film (ABF), a ceramic, and a
solder resist.
24. The method of forming an inductor structure into an array of
claim 23 wherein said plurality of magnetic sections is formed from
a magneto-dielectric.
25. The method of forming an inductor structure into an array of
claim 21 used to form an inductor array used in conjunction with a
voltage regulator module array.
26. A method of forming an inductor structure included in an
inductor array comprising: forming a plurality of first conductive
layers; forming a plurality of magnetic sections over said
plurality of first conductive layers; forming a plurality of first
conductive sidewalls and a plurality of second conductive sidewalls
through said magnetic sections, each one of said plurality of first
and second conductive sidewalls adjoined to one of said plurality
of first conductive layers; forming a plurality of first conductive
portions, each one of said plurality of first conductive portions
adjoined to one of said plurality of first conductive sidewalls,
each one of said plurality of first conductive portions formed
opposite one of said plurality of magnetic sections from one of
said plurality of first conductive layers; and forming a plurality
of second conductive portions, each one of said plurality of second
conductive portions adjoined to one of said plurality of second
conductive sidewalls, each one of said plurality of second
conductive portions formed opposite one of said plurality of
magnetic sections from one of said plurality of first conductive
layers.
27. The method of claim 26 further including the step of forming a
dielectric material between each of said plurality of magnetic
sections and over said plurality of first and second conductive
portions.
28. The method of claim 27 used to fabricate an inductor array
between a voltage regulator module array and an integrated circuit
die.
29. The method of claim 27 wherein said dielectric material is a
solder resist.
30. The method of claim 29 further comprising forming openings in
said dielectric material to expose a portion of said plurality of
first and second conductive portions and filling said openings with
conductive material.
31. The method of claim 30 wherein said openings are filled by
electrolytic plating.
32. The method of claim 26 wherein said plurality of first
conductive sidewalls and said plurality of second conductive
sidewalls are formed by vias.
33. The method of claim 27 wherein said plurality of magnetic
sections have a relative permeability about 300.
Description
RELATED APPLICATIONS
[0001] This application is a divisional application of U.S.
application Ser. No. 10/975,552, filed on Oct. 27, 2004, currently
pending.
BACKGROUND OF THE INVENTION
[0002] 1. Field of the Invention
[0003] The present invention relates to the field of semiconductor
devices and more specifically to an integrated inductor structure
and its method of fabrication.
[0004] 2. Discussion of Related Art
[0005] The need for inductors in semiconductor design dictates the
use of discrete inductors or spiral inductors. The discrete
inductor is in an off-chip, off-package configuration and requires
long interconnects to connect the inductor to the chip. These
interconnects have high impedances and result in large ohmic
losses. Also, discrete inductors require extra space outside the
chip package, which is difficult to provide for in high-density
circuit board fabrication.
[0006] Spiral inductors are created through windings of metal thin
films, usually on a silicon substrate. The first drawback of spiral
inductors includes the large area necessary to create large
inductances, Another drawback of spiral inductors includes the
tendency of the inductors to have high resistances. This high
resistance deteriorates the quality factor of spiral inductors
force the magnetic flux into the silicon substrate causing both
eddy current losses and interference with devices.
SUMMARY
[0007] An inductor structure comprised of a magnetic section and a
single turn solenoid. The single turn solenoid to contain within a
portion of the magnetic section and circumscribed by the magnetic
section.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG. 1a is an illustration of a cross-sectional view of an
embodiment of the inductor structure.
[0009] FIG. 1b is an illustration of an overhead view of an
embodiment of the inductor structure.
[0010] FIG. 2a is a circuit diagram of an embodiment of a buck
converter circuit with the switch in the on position.
[0011] FIG. 2b is a circuit diagram of an embodiment of a buck
converter circuit with the switch in the off position
[0012] FIG. 3 is an illustration of an overhead view of an array of
inductors.
[0013] FIG. 4 is an illustration of a cross-sectional view of an
inductor structure incorporated into the build-up packaging layers
of an integrated circuit package.
[0014] FIG. 5a is an illustration of a cross-sectional view of a
seed layer and a photoresist mask formed on a package substrate for
the formation of an inductor structure.
[0015] FIG. 5b is an illustration of a cross-sectional view of a
package substrate and a conductive layer with a remaining seed
layer for forming an inductor structure.
[0016] FIG. 5c is an illustration of a cross-sectional view of a
package substrate and a conductive layer with a remaining exposed
seed layer removed for forming, an inductor structure.
[0017] FIG. 5d is an illustration of a cross-sectional view showing
a magnetic material formed over a conductive layer and a package
substrate for forming of an inductor structure.
[0018] FIG. 5e is an illustration of a cross-sectional view of
formed trench regions in a magnetic layer for forming an inductor
structure.
[0019] FIG. 5f is an illustration of a cross-sectional view of a
second seed layer formed over a magnetic layer and the trench
formations for forming an inductor structure.
[0020] FIG. 5g is an illustration of a cross-sectional view of a
second photoresist mask formed over the second seed layer for
forming an inductor structure.
[0021] FIG. 5h is an illustration of a cross-sectional view of the
formed sidewalls through a magnetic material with a second and
third conductive layer formed over the magnetic material for
forming an inductor structure.
[0022] FIG. 5e is an illustration of an overhead view of formed
trench regions in a magnetic layer for forming an inductor
structure.
[0023] FIG. 6a is an illustration of a cross-sectional view of
formed conductive layers over a package substrate for forming an
inductor structure.
[0024] FIG. 6b is an illustration of a cross-sectional view of
metal-adhesion layers formed over conductive layers for forming an
inductor structure.
[0025] FIG. 6c is an illustration of a cross-sectional view of a
bowl shape formed by conductive layers after subjected to thermal
stress for forming an inductor structure.
[0026] FIG. 6d is an illustration of a cross-sectional view of bowl
shaped conductive layers with magnetic material formed within and
around the conductive layers for forming an inductor structure.
DETAILED DESCRIPTION
[0027] In the following description numerous specific details are
set forth in order to provide an understanding of the claims. One
of ordinary skill in the art will appreciate that these specific
details are not necessary in order to practice the disclosure. In
other instances, well-known semiconductor fabrication processes and
techniques have not been set forth in particular detail in order to
not unnecessarily obscure the present invention.
[0028] The present invention is an integrated inductor structure
100 and its method of fabrication. In an embodiment, the integrated
inductor structure 100, as shown in FIG. 1a and FIG. 1b, is a
solenoid structure 115 with a single turn that is filled with and
is surrounded by magnetic material 110. The magnetic material 110
enables a reduction of the inductor size because the magnetic
material 110 has a relative magnetic permeability greater than
one[HB1]. This results in a higher inductance per area than an
inductor without magnetic material. In an embodiment of the
inductor structure 100, the area can be about 0.01-9 mm.sup.2 with
an inductance in the nanohenry (nH) range. The dimensions of the
structure of the inductor can be altered to meet specific
inductance and area requirements.
[0029] Another benefit of the magnetic material 110 is the
encapsulation of the magnetic flux within the plane of the inductor
structure 100, leading to a reduction of interference with
surrounding components. In an embodiment, the single turn solenoid
structure of the present invention enables an inductor with a low
resistance. The low resistance and the capability of the inductor
of the present invention to provide inductances in the nanohenry
range permit the use of the inductor in applications such as power
delivery for integrated circuits.
[0030] One such power application includes the use in a buck
converter circuit 200 as shown in FIGS. 2a and 2b. In the buck
converter circuit 200 the inductor structure 100 and the capacitor
240 act as energy storage devices when the switch 220 is in the on
position as shown in FIG. 2a. Once the switch 220 is placed in the
off position, as shown in FIG. 2b, the inductor structure 100 acts
like a source and works to maintain the current through the load
resistor 230. Similarly, the capacitor 240 works to maintain the
voltage across the load resistor 230.
[0031] In the embodiment of FIG. 1a, the layer of magnetic material
110 is formed around and within a conductive material 115 in a
single loop configuration. The conductive material 115 can be
formed from such materials including copper, tungsten, or aluminum.
FIG. 1b shows the overhead view of one embodiment where the
magnetic material 110 surrounds the conductive material 115 in the
longitudinal plane of the inductor structure 100. In an embodiment
the inductor structure 100 can be formed having an area of 0.11
mm.sup.2 with a resistance less than 10 m.OMEGA. and an inductance
of 10.1 nH. An embodiment of the inductor structure 100 can have a
magnetic material 110 with the height of approximately 20-30
microns. This embodiment includes a conductive material 115 in the
single loop configuration with a length of approximately 200-1000
microns, a width of approximately 350-450 microns, and a thickness
of the conductive material 115 of approximately 20 microns.
[0032] In one embodiment the magnetic material 110 is composed of a
soft magnetic material. Soft magnetic materials are easily
magnetized and demagnetized. These properties make soft magnetic
materials useful for enhancing or channeling flux produced by an
electric current. One parameter used to distinguish soft magnetic
materials is the relative permeability, The relative permeability
indicates the amount of magnetic flux density in a material over
that contained in a vacuum when in the presence of a magnetic
force. In an embodiment of the inductor structure 100, the relative
permeability is approximately 95-900. Generally, the relative
permeability of an embodiment of the inductor structure 100 is
approximately 100-500 and typically approximately 300. As mentioned
earlier, materials with magnetic properties are used because the
high permeability creates an increased magnetic flux resulting in a
higher inductance over inductors without material with magnetic
properties. In some embodiments of the inductor structure 100, the
magnetic material 110 is a magneto-dielectric such as CoFHfO. The
magneto-dielectric in another embodiment is formed from magnetic
nanoparticles embedded into a dielectric material. In one
embodiment nanoparticles can be distributed throughout a host
material such as a polymer host.
[0033] As shown in FIG. 3, an embodiment of the inductor structure
100 includes fabrication of an inductor array 300 formed from a
predetermined number of the inductor structures of the present
invention. In such an array, a dielectric material 310, including
an Ajinomoto buildup film (ABF); a ceramic; or a solder resist, can
be used to separate an inductor structure 100 from one another
within the inductor array 300. One embodiment of an inductor array
300 can include approximately 9-10,000 inductor structures of the
present invention.
[0034] In an inductor array 300 embodiment, the inductor structure
100 can be connected to another inductor structure 100 in series,
in parallel, and/or to devices external to the array. Series
connections of an inductor structure 100 can be used to create
inductance values equal to the sum of the inductors connected in
series. Also, the inductor structure 100 in the inductor array 300
can be connected to another inductor structure 100 in parallel to
tune the effective inductance of the combined inductor structure
100 connected together to a certain predetermined inductance. An
individual inductor structure 100 in the inductor array 300, a
combination of serially connected inductor structures 100, a
combination of inductor structures 100 connected in parallel, or a
combination of inductor structures 100 connected in series and in
parallel can be used to connect to devices external to the inductor
array 300. Examples of devices external to the inductor array 300
that could be connected to the inductor structure 100 include
capacitors, voltage regulator modules, resistors, transistors and
other devices useful in electronic design. Embodiments of the
inductor array 300 can have the inductor structure 100 orientated
on its side, upside down, or in other positions.
[0035] As shown in FIG. 4[HB2], one embodiment of the inductor
structure 100, such as an inductor array 300, can be fabricated
into a build-up layer 435 of an integrated circuit package
substrate 405. This build-up layer 435 could contain passive
components including parallel-plate capacitors to form part of a
power converter, such as a buck converter circuit 200. An
embodiment of an inductor structure 100 in an inductor array 300 or
a combination of connected inductors contained in an inductor array
300 contained within a build-up layer 435 can be used in
conjunction with an array of voltage regulator modules (VRMs) 420
incorporated into a separate build-up layer 435. Such an embodiment
can be used as a part of a power conversion circuit, such as a buck
converter circuit 200, to power a die 410. [HB3]One embodiment
positions the inductor array 300 between a die 410 and an array of
VRMs 420 as illustrated in FIG. 4. The voltage regulator elements
of a build-up layer 435[Hb4] convert a higher supply voltage to a
lower voltage that is then coupled to the power grid of the die
410. Since the voltage regulators within the build-up layer 435 are
separated from the circuits on the die 410 by the distance covered
by the connections, which can be on the order of a few tens of
microns in length, the lowered-voltage supply can be distributed in
a manner minimizing IR and Ldi/dt voltage drops.
[0036] In an embodiment, an inductor structure 100 or an inductor
array 300 can be coupled to a die 410 by die bonding techniques
including flip-chip solder bumps 426, bumpless build-up layer
(BBUL), or wire bond. In a BBUL embodiment, the package is built up
around the die 410, so the die is contained within the packaging
substrate core 415. The die 410 is then connected to a build-up
layer 435 and/or input/output (I/O) pins 430 using interconnections
425. The two-dimensional interface and minimal separation distance
between a build-up layer 435 and a die 410 helps ensure a further
reduction of IR voltage drops and supply bottlenecks when compared
to other die bonding techniques.
[0037] As illustrated in FIG. 4, the die 410 can be connected
directly to I/O pins 430 through interconnects 425 including copper
I/O interconnects or thru-vias that transverse the package
substrate 405. The interconnects 425 within an integrated circuit
package substrate 405 can connect an inductor structure 100,
inductor array 300, a die 410 or other devices to external devices
on a motherboard through the I/O pins 430. These I/O pins 430 can
include but are not limited to metal leads, solder bumps, or wire
in formations such as a pin grid array, a ball grid array, a
ceramic column grid array, a leadless grid array, or a land grid
array.
[0038] Because the build-up layer 435 is positioned in between the
I/O pins 430 and the die 410, the build-up layer 435 can be made
thin enough to allow a set of thru-vias to penetrate through the
layer. The thru-vias are interconnections 425 that traverse the
entire build-up layer 435 or packaging core 415, while being
insulated from the layer. In an embodiment, the thru-vias are
situated around the perimeter of the build-up layer 435 and do not
affect the devices contained within the build-up layer 435. An
alternative embodiment does not include thru-vias. Instead, the
devices in the build-up layer 435 and I/O pins 430 and the die 410
are coupled via I/O interconnect wires that run beyond the edge of
the build-up layer 435.
[0039] One fabrication method of the inductor structure 100 can be
achieved through a modified version of a conventional high-density
interconnect process as illustrated in FIGS. 5a-5h. FIG. 5a
illustrates the formation of the first conductive layer 510 over a
substrate 500 such as a printed circuit board by first forming a
first seed layer 515 such as a copper seed layer. A technique to
form the first conductive layer 510 includes forming a first
photoresist mask 520 using well-known masking, exposing, and
developing techniques over the substrate 500 to define the location
505 of the first conductive layer 510. In an embodiment, the first
conductive layer 510 can be formed of a material such as copper,
tungsten, or aluminum. In an embodiment using copper, well-know
techniques such as electroplating can be used. The first
photoresist mask 520 is removed using well-known techniques to form
the structure illustrated in FIG. 5b. The exposed first seed layer
515 is etched away to produce the formation as shown in FIG. 5c. A
layer of magnetic material 530 is formed over the package substrate
layer 500 and the first conductive layer 510 as illustrated in FIG.
5d.
[0040] One method for forming the magnetic material 530 includes
laminating many layers of a magneto-dielectric sheet until the
desired thickness is achieved. In an embodiment the thickness of
the magnetic material can be approximately 30 microns. A second
method used to form a magneto-dielectric sheet includes
co-sputtering a polymer with a magnetic material. Another method of
forming the magnetic material 530 includes alternating layers of
magnetic material with insulating material. The combination of the
layers helps mitigate the effects of eddy currents when the
inductor structure 100 is used at high frequencies of operation. In
yet another method, the magnetic material 530 can be formed by
sputtering until the desired height of the material 530 is formed.
One method of forming the magnetic material 530 includes a step to
planarize the magnetic material 530 after the material is
deposited.
[0041] Next, as shown in a cross-sectional view in FIG. 5e and the
overhead view in FIG. 5e', sidewall trenches 540 and isolation
trenches 545 between each inductor structure 100 are formed by
etching or typically by laser blazing[HB5] through the magnetic
material 530 until the first conductive layer 510 is exposed. In
one method the conductive sidewalls 560 can be formed using vias.
These sidewall vias can be formed of copper using well-known
plating techniques. One embodiment of the method can employ a
series of vias stacked upon each other until the sidewalls 560 are
formed through the magnetic layer, Another method employs vias
spaced apart from one another at predetermined distances.
[0042] FIGS. 5f and 5g illustrate a step of one technique used to
form the sidewalls 560, the second conductive layer 570, and the
third conductive layer 580. As FIG. 5f shows, the first step
includes forming a second seed layer 575 over the formation shown
in FIG. 5e. Once the second seed layer 575 is formed, a second
photoresist mask 565 illustrated in FIG. 5g is formed to define the
second conductive layer 570 and the third conductive layer 580
illustrated in FIG. 5h. The second photoresist mask 565 also
prevents conductive material from filling the isolation trench 545.
The sidewall trenches 540 are then filled with a conductive
material to form conductive sidewalls 560 coupled to the first
conductive layer 510 as illustrated in FIG. 5h. A second conductive
layer 570 is formed over one conductive sidewall 560 such that the
second conductive layer 570 is coupled to a conductive sidewall
560. The second conductive layer 570 overlays a portion of the
magnetic material 530 toward the other conductive sidewall 560. A
third conductive layer 580 is formed to couple with the other
conductive sidewall 560. The third conductive layer 580 also covers
part of the center portion of the magnetic material 530 as shown in
FIG. 5h.
[0043] One method incorporates the creation of the second
conductive layer 570, third conductive layer 580, and the sidewalls
560 into one step after the formation of a second photoresist mask
565. After the second photoresist mask 565 defines the pattern for
the second conductive layer 570 and third conductive layer 580, a
conductive material can be formed using well-known techniques such
as electroplating. Once the second conductive layer 570, the third
conductive layer 580, and the sidewalls 560 are formed, the second
photoresist mask 565 can be removed by well-known techniques
resulting in the structure shown in FIG. 5h.
[0044] In a method to form the inductor structure 100, a dielectric
layer is formed over the structure shown in FIG. 5h and within the
isolation trench 545. The dielectric layer can be an Ajinomoto
buildup film (ABF), a ceramic, or a solder resist. In an embodiment
using a solder resist for the dielectric layer, a further step of
creating openings in the solder resist layer to expose circular
areas of the conductive material of the second conductive layer 570
and the third conductive layer 580 could be used. Once the openings
are formed, the openings are then filled with a conductive
material. This conductive material can be formed by electrolytic or
electroless plating and creates a contact point for interconnecting
with other devices.
[0045] In another method of fabrication, the conductive layer of
the inductor structure 100 is formed in one step, as shown in FIGS.
6a-d. FIG. 6a shows the result of using standard electroplating
methods to form a conductive layer 605 over a package substrate
500. A metal-adhesion layer 610 is sputtered on the top of the
conductive layer 605 to act as a mechanism to delaminate the
conductive layer 605 from the package substrate 500 as shown in
FIG. 6b. The metal-adhesion layer 610 is selected to have a greater
adhesion with the conductive layer 605 than the adhesion between
the conductive layer 605 and the package substrate 500. Subjecting
the conductive layer 605 to thermal stresses will delaminate the
conductive layer 605 from the package substrate 500. This process
forms the conductive layer 605 into a bowl shaped structure as
illustrated in 6c. As shown in FIG. 6d, a magnetic material 530 is
then formed inside and around the conductive layer 605.
* * * * *