U.S. patent application number 11/214544 was filed with the patent office on 2006-09-21 for pitch reduced patterns relative to photolithography features.
Invention is credited to Mirzafer K. Abatchev, Ramakanth Alapati, Jingyi (Jenny) Bai, D. Mark Durcan, Sheron Honarkhah, John Lee, Shuang Meng, Paul Morgan, William T. Rericha, Gurtej S. Sandhu, Puneet Sharma, Luan Tran, Zhiping Yin.
Application Number | 20060211260 11/214544 |
Document ID | / |
Family ID | 36625823 |
Filed Date | 2006-09-21 |
United States Patent
Application |
20060211260 |
Kind Code |
A1 |
Tran; Luan ; et al. |
September 21, 2006 |
Pitch reduced patterns relative to photolithography features
Abstract
Differently-sized features of an integrated circuit are formed
by etching a substrate using a mask which is formed by combining
two separately formed patterns. Pitch multiplication is used to
form the relatively small features of the first pattern and
conventional photolithography used to form the relatively large
features of the second pattern. Pitch multiplication is
accomplished by patterning a photoresist and then etching that
pattern into an amorphous carbon layer. Sidewall spacers are then
formed on the sidewalls of the amorphous carbon. The amorphous
carbon is removed, leaving behind the sidewall spacers, which
define the first mask pattern. A bottom anti-reflective coating
(BARC) is then deposited around the spacers to form a planar
surface and a photoresist layer is formed over the BARC. The
photoresist is next patterned by conventional photolithography to
form the second pattern, which is then is transferred to the BARC.
The combined pattern made out by the first pattern and the second
pattern is transferred to an underlying amorphous silicon layer and
the pattern is subjected to a carbon strip to remove BARC and
photoresist material. The combined pattern is then transferred to
the silicon oxide layer and then to an amorphous carbon mask layer.
The combined mask pattern, having features of difference sizes, is
then etched into the underlying substrate through the amorphous
carbon hard mask layer.
Inventors: |
Tran; Luan; (Meridian,
ID) ; Rericha; William T.; (Boise, ID) ; Lee;
John; (Boise, ID) ; Alapati; Ramakanth;
(Boise, ID) ; Honarkhah; Sheron; (Boise, ID)
; Meng; Shuang; (Boise, ID) ; Sharma; Puneet;
(Boise, ID) ; Bai; Jingyi (Jenny); (San Jose,
CA) ; Yin; Zhiping; (Boise, ID) ; Morgan;
Paul; (Kuna, ID) ; Abatchev; Mirzafer K.;
(Boise, ID) ; Sandhu; Gurtej S.; (Boise, ID)
; Durcan; D. Mark; (Boise, ID) |
Correspondence
Address: |
KNOBBE MARTENS OLSON & BEAR LLP
2040 MAIN STREET
FOURTEENTH FLOOR
IRVINE
CA
92614
US
|
Family ID: |
36625823 |
Appl. No.: |
11/214544 |
Filed: |
August 29, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
60662323 |
Mar 15, 2005 |
|
|
|
Current U.S.
Class: |
438/763 ;
257/E21.038; 257/E21.039; 257/E21.235; 257/E21.236; 438/942 |
Current CPC
Class: |
H01L 21/3086 20130101;
H01L 21/0337 20130101; H01L 21/3088 20130101; H01L 21/0338
20130101 |
Class at
Publication: |
438/763 ;
438/942 |
International
Class: |
H01L 21/31 20060101
H01L021/31 |
Claims
1-30. (canceled)
31. A method for semiconductor processing, comprising: providing a
substrate, wherein a primary mask layer overlies the substrate, a
hard mask layer formed of a first material overlies the primary
mask layer, a hard mask layer formed of a second material overlies
the hard mask layer formed of the first material, wherein a pattern
comprising pitch-multiplied spacers overlies the hard mask layer
comprising the second material; transferring the pattern to the
hard mask layer comprising the second material; subsequently
transferring the pattern to the hard mask layer formed of the first
material; and subsequently transferring the pattern to the primary
mask layer.
32. The method of claim 31, wherein the spacers extend in spaced,
generally parallel relation to one another at least between first
and second spaced planes extending perpendicular to the
features.
33. The method of claim 31, further comprising perform a carbon
strip before transferring the pattern to the hard mask layer
comprising the second material.
34. The method of claim 31, wherein the primary mask layer
comprises amorphous carbon.
35. The method of claim 34, wherein the primary mask layer
comprises transparent carbon.
36. The method of claim 34, wherein spacers are formed of the first
material.
37. The method of claim 34, wherein the first material is silicon
or silicon oxide.
38. The method of claim 37, wherein transferring the pattern to the
hard mask layer comprising the second material comprises etching
the hard mask layer using a HBr and Cl.sub.2, containing
plasma.
39. The method of claim 37, wherein the second material is
different from the first material and is silicon or silicon
oxide.
40. The method of claim 39, wherein transferring the pattern to the
hard mask layer comprising the second material comprises etching
the hard mask layer comprising the second material using a
fluorocarbon plasma.
41. The method of claim 31, further comprising transferring the
pattern to the substrate.
42. The method of claim 41, wherein transferring the pattern to the
substrate comprises anisotropically etching the substrate.
43. The method of claim 42, wherein transferring the pattern to the
substrate defines a control gate stack for a NAND flash memory.
44. The method of claim 42, wherein transferring the pattern to the
substrate defines features of a logic array.
45. The method of claim 42, wherein transferring the pattern to the
substrate defines features of a gate array.
46. The method of claim 42, wherein transferring the pattern to the
substrate defines features of a memory array.
47. The method of claim 42, wherein transferring the pattern to the
substrate defines features of a computer processor.
48. The method of claim 41, further comprising removing the first
material or the first and second materials before etching the
substrate.
49. A method for semiconductor fabrication, comprising: forming a
first pattern by pitch multiplication; separately defining a second
pattern using photolithography without pitch multiplication;
simultaneously transferring the first and second patterns to a hard
mask layer; simultaneously transferring the first and second
patterns from the hard mask layer to an other hard mask layer;
simultaneously transferring the first and second patterns from the
other hard mask layer to a primary mask layer; and processing a
substrate through the primary mask layer.
50. The method of claim 49, further comprising stripping carbon
from features forming the first and second patterns before
simultaneously transferring the first and second patterns to a hard
mask layer.
51. The method of claim 50, wherein stripping carbon comprises
performing an O.sub.2 plasma etch.
52. The method of claim 49, wherein the first and the second
patterns partially overlap.
53. The method of claim 49, wherein forming a first pattern by
pitch multiplication comprises: forming a photoresist pattern;
transferring the photoresist pattern to a temporary layer above the
hard mask layer; forming spacers on sidewalls of the patterned
temporary layer; and removing material of the temporary layer to
leave free-standing spacers which constitute the first pattern.
54. The method of claim 53, wherein forming the first pattern
further comprises reducing a width of features in the photoresist
pattern to a desired width by isotropically etching the photoresist
before transferring the photoresist pattern.
55. The method of claim 53, wherein forming spacers comprises
depositing a blanket layer of a spacer material and removing spacer
material from horizontal surfaces to leave vertically extending,
free-standing spacers.
56. The method of claim 53, wherein depositing a blanket layer
comprises atomic layer deposition.
57. The method of claim 53, wherein depositing a blanket layer
comprises chemical vapor deposition using O.sub.3 and TEOS as
precursors.
58. The method of claim 53, wherein removing material comprises
etching with a sulfur dioxide-containing plasma.
59. The method of claim 53, wherein separately defining a second
pattern using photolithography without pitch multiplication
comprises: forming a protective layer around the free-standing
spacers; forming an other photoresist pattern above a level of the
spacers; and transferring the other photoresist pattern to the
level of the spacers.
60. The method of claim 59, wherein forming a photoresist pattern
and/or forming an other photoresist pattern comprise performing
electron beam lithography.
61. The method of claim 59, wherein forming a photoresist pattern
and/or forming an other photoresist pattern comprise performing
photolithography with light having a wavelength chosen from the
group consisting of 13.7 nm, 157 nm, 193 nm, 248 nm or 365 nm
wavelength light.
62. The method of claim 59, wherein forming a photoresist pattern
and/or forming an other photoresist pattern comprise performing
maskless lithography.
63. The method of claim 59, wherein the temporary layer and the
primary mask layer are formed of amorphous carbon.
64. The method of claim 63, wherein the hard mask and the other
hard mask layers each comprise a different material selected from
the group consisting of silicon, silicon dioxide and silicon
nitride.
65. The method of claim 59, wherein the spacers have a width of
less than about 100 nm and features it the second pattern have a
width of greater than about 100 nm.
66. The method of claim 59, wherein transferring the other
photoresist pattern to the level of the spacers comprises
performing a fluorocarbon plasma etch.
67. The method of claim 49, wherein simultaneously transferring the
first and second patterns from the other hard mask layer to a
primary mask layer comprises etching with a sulfur
dioxide-containing plasma.
68. The method of claim 49, wherein processing the substrate
comprises etching the substrate through the primary mask layer.
69. The method of claim 68, wherein the substrate comprises a
plurality of layers and wherein etching the substrate comprises
employing a plurality of different etch chemistries.
70. The method of claim 68, wherein etching the substrate forms a
gate stack.
71. The method of claim 68, wherein etching the substrate forms a
shallow trench isolation structure.
72. The method of claim 49, wherein the substrate is an
insulator.
73. The method of claim 49, wherein processing the substrate
defines conductive lines of an array of a memory device.
74. A method for forming a memory device, comprising: forming a
pattern comprising pitch multiplied spacers over a hard mask layer
overlying an amorphous carbon layer; etching the pattern into the
hard mask layer; subjecting the spacers to a carbon etch after
etching the pattern; removing the spacers; and subsequently
transferring the pattern from the hard mask layer to the amorphous
carbon layer.
75. The method of claim 74, wherein subjecting the spacers to the
carbon etch comprises performing an O.sub.2 plasma etch.
76. The method of claim 74, wherein removing the spacers comprises
performing a buffered oxide etch or a dry etch using a
CH.sub.2F.sub.2/C.sub.4F.sub.8/Ar/O.sub.2 plasma.
77. The method of claim 74, further comprising forming a second
pattern of conventionally photolithographically formed features
over the hard mask layer, wherein forming the pattern comprises
consolidating the pattern of pitch multiplied spacers with the
second pattern on the same level.
78. The method of claim 77, wherein a pitch of the spacers is less
than a minimum pitch of the photolithographic technique used for
features of the second pattern.
79. The method of claim 74, wherein the spacers are formed of a
material chosen form the group comprising silicon, silicon oxide
and silicon nitride.
80. The method of claim 74, further comprising an additional hard
mask layer disposed between the hard mask layer and the amorphous
carbon layer, wherein subsequently transferring comprises
transferring the pattern from the hard mask layer to the additional
hard mask layer and then transferring the pattern to the amorphous
carbon layer.
81. The method of claim 74, further comprising transferring the
pattern to a substrate underlying the amorphous carbon layer.
82. The method of claim 74, wherein the spacers extend in spaced,
generally parallel relation to one another at least between first
and second spaced planes extending perpendicular to the
spacers.
83-114. (canceled)
Description
REFERENCE TO RELATED APPLICATIONS
[0001] This application claims the priority benefit under 35 U.S.C.
.sctn.119(e) of provisional Application No. 60/662,323, filed Mar.
15, 2005.
[0002] This application is also related to and incorporates the
following by reference in their entireties: U.S. patent application
Ser. No. 10/931,772 to Abatchev et al., filed Aug. 31, 2004; U.S.
patent application Ser. No. 10/932,993 to Abatchev et al., filed
Sep. 1, 2004; U.S. patent application Ser. No. 10/931,771 to Tran
et al., filed Aug. 31, 2004; U.S. patent application Ser. No.
10/934,317 to Sandhu et al., filed Sep. 2, 2004.
BACKGROUND OF THE INVENTION
[0003] 1. Field of the Invention
[0004] This invention relates generally to integrated circuit
fabrication and, more particularly, to masking techniques.
[0005] 2. Description of the Related Art
[0006] As a consequence of many factors, including demand for
increased portability, computing power, memory capacity and energy
efficiency, integrated circuits are continuously being reduced in
size. The sizes of the constituent features that form the
integrated circuits, e.g., electrical devices and interconnect
lines, are also constantly being decreased to facilitate this size
reduction.
[0007] The trend of decreasing feature size is evident, for
example, in memory circuits or devices such as dynamic random
access memories (DRAMs), flash memory, static random access
memories (SRAMs), ferroelectric (FE) memories, etc. To take one
example, DRAM typically comprises millions of identical circuit
elements, known as memory cells. In its most general form, a memory
cell typically consists of two electrical devices: a storage
capacitor and an access field effect transistor. Each memory cell
is an addressable location that can store one bit (binary digit) of
data. A bit can be written to a cell through the transistor and can
be read by sensing charge in the capacitor. By decreasing the sizes
of the electrical devices that constitute a memory cell and the
sizes of the conducting lines that access the memory cells, the
memory devices can be made smaller. Additionally, storage
capacities can be increased by fitting more memory cells on a given
area in the memory devices.
[0008] The continual reduction in feature sizes places ever greater
demands on the techniques used to form the features. For example,
photolithography is commonly used to pattern features, such as
conductive lines. The concept of pitch can be used to describe the
sizes of these features. Pitch is defined as the distance between
an identical point in two neighboring features. These features are
typically defined by spaces between adjacent features, which spaces
are typically filled by a material, such as an insulator. As a
result, pitch can be viewed as the sum of the width of a feature
and of the width of the space on one side of the feature separating
that feature from a neighboring feature. However, due to factors
such as optics and light or radiation wavelength, photolithography
techniques each have a minimum pitch below which a particular
photolithographic technique cannot reliably form features. Thus,
the minimum pitch of a photolithographic technique is an obstacle
to continued feature size reduction.
[0009] "Pitch doubling" or "pitch multiplication" is one proposed
method for extending the capabilities of photolithographic
techniques beyond their minimum pitch. A pitch multiplication
method is illustrated in FIGS. 1A-1F and described in U.S. Pat. No.
5,328,810, issued to Lowrey et al., the entire disclosure of which
is incorporated herein by reference. With reference to FIG. 1A, a
pattern of lines 10 is photolithographically formed in a
photoresist layer, which overlies a layer 20 of an expendable
material, which in turn overlies a substrate 30. As shown in FIG.
1B, the pattern is then transferred using an etch (preferably an
anisotropic etch) to the layer 20, thereby forming placeholders, or
mandrels, 40. The photoresist lines 10 can be stripped and the
mandrels 40 can be isotropically etched to increase the distance
between neighboring mandrels 40, as shown in FIG. 1C. A layer 50 of
spacer material is subsequently deposited over the mandrels 40, as
shown in FIG. 1D. Spacers 60, i.e., the material extending or
originally formed extending from sidewalls of another material, are
then formed on the sides of the mandrels 40. The spacer formation
is accomplished by preferentially etching the spacer material from
the horizontal surfaces 70 and 80 in a directional spacer etch, as
shown in FIG. 1E. The remaining mandrels 40 are then removed,
leaving behind only the spacers 60, which together act as a mask
for patterning, as shown in FIG. 1F. Thus, where a given pitch
previously included a pattern defining one feature and one space,
the same width now includes two features and two spaces, with the
spaces defined by, e.g., the spacers 60. As a result, the smallest
feature size possible with a photolithographic technique is
effectively decreased.
[0010] While the pitch is actually halved in the example above,
this reduction in pitch is conventionally referred to as pitch
"doubling," or, more generally, pitch "multiplication." Thus,
conventionally, "multiplication" of pitch by a certain factor
actually involves reducing the pitch by that factor. The
conventional terminology is retained herein.
[0011] Because the layer 50 of spacer material typically has a
single thickness 90 (see FIGS. 1D and 1E) and because the sizes of
the features formed by the spacers 60 usually correspond to that
thickness 90, pitch doubling typically produces features of only
one width. Circuits, however, generally employ features of
different sizes. For example, random access memory circuits
typically contain arrays of memory cells located in one part of the
circuits and logic circuits located in the so-called "periphery."
In the arrays, the memory cells are typically connected by
conductive lines and, in the periphery, the conductive lines
typically contact landing pads for connecting arrays to logic.
Peripheral features such as landing pads, however, can be larger
than the conductive lines. In addition, periphery electrical
devices, including peripheral transistors, can be larger than the
electrical devices in the array. Moreover, even if peripheral
features can be formed with the same pitch as features in the
array, because mask patterns formed by pitch multiplication may be
limited to those that are formed along the sidewalls of patterned
photoresist, pitch multiplication by itself typically does not
offer the flexibility, e.g., geometric flexibility, required to
define some features.
[0012] To overcome such limitations, some proposed methods for
forming patterns at the periphery and in the array involve
separately etching patterns into the array region and the periphery
regions of a substrate. A pattern in the array is first formed and
transferred to the substrate using one mask and then another
pattern in the periphery is formed and separately transferred to
the substrate using another mask. Because such methods form
patterns using different masks at different locations on a
substrate, they are limited in their ability to form features that
require overlapping patterns, such as when a landing pad overlaps
an interconnect line. As a result, yet a third mask may be
necessary to "stitch" two separate patterns of features together.
Undesirably, such a third mask would add to the expense and
complexity of a process flow and would face technical challenges in
aligning a mask with both the fine features defined by the pitch
multiplication technique and the typically larger peripheral
features.
[0013] Accordingly, there is a need for methods of forming features
of different sizes, especially where some features are formed below
the minimum pitch of a photolithographic technique, and especially
in conjunction with pitch multiplication.
SUMMARY OF THE INVENTION
[0014] According to one aspect of the invention, a method is
provided for forming an integrated circuit. The method comprises
forming an amorphous carbon layer over a substrate. A lower hard
mask layer is formed over the amorphous carbon layer. An upper hard
mask layer is formed on the lower hard mask layer. A temporary
layer is formed over the upper hard mask layer. A first hard mask
layer is formed over the temporary layer.
[0015] According to another aspect of the invention, a method is
provided for semiconductor processing. The method comprises
providing a substrate having an overlying primary mask layer. A
hard mask layer formed of a first material overlies the primary
mask layer, a hard mask layer formed of a second material overlies
the hard mask layer formed of the first material, and a pattern
comprising pitch-multiplied spacers overlies the hard mask layer
comprising the second material. The pattern is transferred to the
hard mask layer comprising the second material. The pattern is
subsequently transferred to the hard mask layer formed of the first
material. The pattern is then transferred to the primary mask
layer.
[0016] According to yet another aspect of the invention, a method
is provided for semiconductor fabrication. The method comprises
forming a first pattern by pitch multiplication and separately
defining a second pattern using photolithography without pitch
multiplication. The first and second patterns are simultaneously
transferred to a hard mask layer. The first and second patterns are
then simultaneously transferred from the hard mask layer to an
other hard mask layer. The first and second patterns are
simultaneously transferred from the other hard mask layer to a
primary mask layer. The substrate is processed through the primary
mask layer.
[0017] According to another aspect of the invention, a method is
provided for forming a memory device. The method comprises forming
a pattern comprising pitch multiplied spacers over a hard mask
layer overlying an amorphous carbon layer. The pattern is etched
into the hard mask layer. The spacers are subjected to a carbon
etch after etching the pattern. The spacers are removed and the
pattern is subsequently transferred from the hard mask layer to the
amorphous carbon layer.
[0018] According to yet another aspect of the invention, a method
is provided for integrated circuit fabrication. The method
comprises forming an amorphous carbon layer over a substrate and
depositing a hard mask layer on the amorphous carbon layer at a
temperature less than about 450.degree. C.
[0019] According to another aspect of the invention, a partially
formed integrated circuit is provided. The partially formed
integrated circuit comprises a substrate and a primary mask layer
overlying the substrate. The primary mask layer is formed of a
material different from photoresist. A lower hard mask layer
overlies the primary mask layer and an upper hard mask layer
overlies the lower mask layer. A mask material, which is different
from photoresist, defines a first pattern in a first plane
overlying the upper hard mask layer. A photodefinable material
defines a second pattern over the upper hard mask layer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0020] The invention will be better understood from the Detailed
Description of the Preferred Embodiments and from the appended
drawings, which are meant to illustrate and not to limit the
invention, and wherein:
[0021] FIGS. 1A-1F are schematic, cross-sectional side views of a
sequence of masking patterns for forming conductive lines, in
accordance with a prior art pitch doubling method;
[0022] FIG. 2A is a schematic top plan view of a partially formed
integrated circuit, in accordance with preferred embodiments of the
invention;
[0023] FIGS. 2B-2C are schematic cross-sectional side views of the
partially formed integrated circuit of FIG. 2A, in accordance with
preferred embodiments of the invention;
[0024] FIGS. 3A and 3B are schematic cross-sectional side and top
plan views of the partially formed integrated circuit of FIG. 2
after forming lines in a photoresist layer in the array region of
the integrated circuit, in accordance with preferred embodiments of
the invention;
[0025] FIGS. 4A and 4B are schematic cross-sectional side and top
plan views of the partially formed integrated circuit of FIGS. 3A
and 3B after widening spaces between lines in the photoresist
layer, in accordance with preferred embodiments of the
invention;
[0026] FIG. 5 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIGS. 4A and 4B after
etching through a first hard mask layer, in accordance with
preferred embodiments of the invention;
[0027] FIG. 6 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 5 after transferring a
pattern from the hard mask layer to a temporary layer, in
accordance with preferred embodiments of the invention;
[0028] FIG. 7 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 6 after a hard mask
layer removal, in accordance with preferred embodiments of the
invention;
[0029] FIG. 8 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 7 after depositing a
layer of a spacer material, in accordance with preferred
embodiments of the invention;
[0030] FIGS. 9A and 9B are schematic, cross-sectional side and top
plan views of the partially formed integrated circuit of FIG. 8
after a spacer etch, in accordance with preferred embodiments of
the invention;
[0031] FIG. 10 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIGS. 9A and 9B after
removing a remaining portion of the temporary layer to leave a
pattern of spacers in the array region of the integrated circuit,
in accordance with preferred embodiments of the invention;
[0032] FIG. 11 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 10 after surrounding
the spacers with a removable planarizing material and forming a
photoresist layer over the spacers, in accordance with preferred
embodiments of the invention;
[0033] FIG. 12 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 11 after forming a
pattern in the photoresist layer in the periphery of the integrated
circuit, in accordance with preferred embodiments of the
invention;
[0034] FIG. 13 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 12 after transferring
the pattern from the photoresist layer to the planarizing material
at the same level as the spacers, in accordance with preferred
embodiments of the invention;
[0035] FIG. 14 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 13 after etching the
pattern in the periphery and the spacer pattern in the array into
an underlying hard mask layer, in accordance with preferred
embodiments of the invention;
[0036] FIG. 15 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 14 after performing a
pattern clean step to remove the photoresist and patterned
planarizing material, in accordance with preferred embodiments of
the invention;
[0037] FIG. 16 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 15 after etching the
pattern in the periphery and the spacer pattern in the array into
another underlying hard mask layer, in accordance with preferred
embodiments of the invention;
[0038] FIG. 17 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 16 after transferring
both the pattern in the periphery and the spacer pattern in the
array to a primary mask layer, in accordance with preferred
embodiments of the invention;
[0039] FIG. 18 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 17 after transferring
the periphery pattern and the spacer pattern to the underlying
substrate, in accordance with preferred embodiments of the
invention;
[0040] FIG. 19 is a schematic, cross-sectional side view of the
partially formed integrated circuit of FIG. 17 after performing a
spacer removal and before transferring the pattern into the
substrate, in accordance with other preferred embodiments of the
invention;
[0041] FIG. 20 is a micrograph, as viewed through a scanning
electron microscope, of a side cross section of a pattern etched
into both the array and the periphery of a partially formed
integrated circuit, formed in accordance with preferred embodiments
of the invention; and
[0042] FIGS. 21A and 21B are micrographs, as viewed through a
scanning electron microscope, of a top view of a pattern etched
into the array and the periphery, respectively, of a partially
formed integrated circuit, formed in accordance with preferred
embodiments of the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0043] In addition to problems with forming differently sized
features, it has been found that pitch- doubling techniques can
encounter difficulty in transferring spacer patterns to a
substrate. In common methods of transferring patterns, both the
spacers and the underlying substrate are exposed to an etchant,
which preferentially etches away the substrate material. The
etchants, however, can also wear away the spacers, albeit at a
slower rate. Thus, over the course of transferring a pattern to an
underlying material, the etchant can wear away the spacers before
the pattern transfer is complete. These difficulties are
exacerbated by the trend towards decreasing feature size, which,
for example, increasingly leads to the need to form trenches which
have increasingly higher depth to width ratios. Thus, in
conjunction with difficulties in producing structures having
different feature sizes, pattern transfer limitations make the
application of pitch multiplication principles to integrated
circuit manufacture even more difficult.
[0044] In view of these difficulties, preferred embodiments of the
invention allow for improved pattern transfer and for the formation
of differently sized features in conjunction with pitch
multiplication. In a first phase of methods according to the
preferred embodiments, an appropriate sequence of layers of
materials is formed to allow formation of a mask for processing a
substrate. In a second phase of methods according to the preferred
embodiments, photolithography and pitch multiplication are
preferably used to form a first pattern defined by spacers. This
typically forms features of one size in one region of the chip,
e.g., the array of a memory chip. In a third phase,
photolithography is performed to form a second pattern in a mask
layer formed over or around features forming the first pattern. To
allow this photolithography, another photoresist layer can be
formed around the spacers or, more preferably, the spacers are
surrounded by a planarizing material and photoresist layer is
preferably formed over the planarizing material. The second pattern
can completely or partially overlap the first pattern, or, in some
preferred embodiments, can be completely in a different region of
the chip, e.g., the periphery of the memory chip.
[0045] In a fourth phase, both the first and second patterns are
transferred to an underlying primary masking layer, which
preferably can be preferentially etched relative to an underlying
substrate. Because the primary masking layer is preferably used to
transfer patterns the substrate, various precautions are preferably
taken to maintain the structural and chemical integrity of this
layer so that the patterns formed in this layer are
well-defined.
[0046] As such, the pattern transfer is preferably accomplished by
transferring the first and second patterns consecutively to two
hard mask layers and then to the primary masking layer. It has been
found that performing an etch through the planarizing layer or the
photoresist layer can result in polymerization of the photoresist
material and/or planarizing material. This polymerization can leave
deposits around pattern features, thereby distorting features of
the first and/or second patterns. This distortion can be
particularly problematic given the small pitches for which pitch
multiplication is typically used. As a result, after etching the
first and second patterns into an upper hard mask layer, a cleaning
step is preferably performed to remove the planarizing material,
photoresist and any polymerized planarizing material or
photoresist. Because the planarizing material, the photoresist and
the underlying primary masking layer are preferably all
carbon-based materials, the cleaning can also undesirably etch the
primary masking layer. This is especially a concern where the
cleaning is accomplished using an isotropic etch, which can etch
the primary mask layer uncontrollably and typically does not form
well-defined features. Thus, a lower hard mask layer is preferably
used to protect the primary masking layer during the cleaning
step.
[0047] Moreover, the lower hard mask layer and, more preferably,
both the lower and upper hard mask are preferably formed by low
temperature deposition processes, preferably performed at less than
about 550.degree. C. and, more preferably, at less than about
450.degree. C. and, most preferably, at less than about 400.degree.
C. Processing at these low temperatures advantageously aids in
maintaining the integrity of the primary masking layer, especially
when that layer is formed of amorphous carbon. For example,
undesirable ashing can occur if amorphous carbon is exposed to
higher temperatures.
[0048] Thus, a preferred material for the primary masking layer is
amorphous carbon. Preferred materials for the spacers include
silicon, silicon nitride, or silicon oxide. In other embodiments,
the materials for the spacers and the primary masking layer can be
reversed. The upper hard mask layer is preferably formed of a
material that can be deposited at low temperatures, as discussed
above, and is preferentially etchable relative to the spacers, the
lower hard mask layer and any material other material overlying the
upper hard mask layer. The lower hard mask layer is preferably also
formed of a material that can be deposited at low temperatures and
is preferentially etchable relative to the primary masking layer
and the upper hard mask layer. The spacers and the lower hard mask
layer can be formed of different materials, but preferably are
formed of the same material to simplify processing and process
chemistries. For example, in some embodiments, the spacers and the
lower hard mask layer can be formed of an oxide, e.g., silicon
oxide, while the upper hard mask layer can be formed of, e.g.,
silicon, or vice versa. The first and second patterns can then be
transferred from one or both hard mask layers to the primary
masking layer.
[0049] The first and second patterns are then preferably
transferred from the primary masking layer to the underlying
substrate in a single step. Thus, patterns for forming differently
sized features, some of which are below the minimum pitch of the
photolithographic technique used for patterning, can be formed and
these patterns can be successfully transferred to the underlying
substrate. Moreover, because the second pattern is preferably
initially formed in a layer substantially coextensive with the
first pattern, the second pattern can overlap the first pattern. As
a result, overlapping features of different sizes on both sides of
the photolithographic limit, such as conducting lines and landing
pads or periphery transistors, can advantageously be formed.
[0050] Preferably, the primary masking layer is the masking layer
that directly overlies and, due to etch selectivity, is primarily
used as the mask to pattern the substrate. In particular, the
primary masking layer is preferably formed of a material that
allows good etch selectivity relative to both the immediately
overlying hard mask material and the substrate material, thereby
allowing: the spacer pattern in the hard mask layer to be
effectively transferred to it; the primary masking layer to be
selectively removed without harming the substrate; and the pattern
in it to be effectively transferred to the substrate. In other
embodiments, particularly where the substrate is relatively simple
and can be selectively etched relative to hard mask materials, the
first and second patterns can be transferred directly to the
substrate using a hard mask, e.g., the lower hard mask discussed
above.
[0051] As noted above, in common methods of transferring patterns,
both the mask and the underlying substrate are exposed to etchant,
which can wear away a mask before the pattern transfer is complete.
These difficulties are exacerbated where the substrate comprises
multiple different materials to be etched. It is due to its
excellent etch selectivity relative to a variety of materials,
including oxides, nitrides and silicon, that the primary masking
layer is preferably formed of amorphous carbon and, more
preferably, transparent carbon.
[0052] While the primary mask layer is preferably appropriately
thick so that it is not worn away before the pattern transfer is
complete, it will be appreciated that the spacers and upper and
lower hard mask layers typically also overlie the primary mask
layer when etching a substrate. It has been found, however, that,
in cases where the primary mask layer is particularly thick and/or
the mask features are very thin, the relatively tall and thin
features in the mask may not be structurally stable. As a result,
the mask features can deform and may be unstable. Thus, an optional
spacer or spacer and hard mask removal can be performed to
straighten and stabilize the profile of the mask features before
transfer of the pattern to the substrate. In other embodiments, one
or both hard mask layers can be removed before transfer of the
pattern to the substrate.
[0053] It will be appreciated that the "substrate" to which
patterns are transferred can include a layer of a single material,
a plurality of layers of different materials, a layer or layers
having regions of different materials or structures in them, etc.
These materials can include semiconductors, insulators, conductors,
or combinations thereof. For example, the substrate can comprise
doped polysilicon, an electrical device active area, a silicide, or
a metal layer, such as a tungsten, aluminum or copper layer, or
combinations thereof. In some embodiments, the mask features
discussed below can directly correspond to the desired placement of
conductive features, such as interconnects, in the substrate. In
other embodiments, the substrate can be an insulator and the
location of mask features can correspond to the desired location of
insulators, such as in damascene metallization. Examples of
structures formed in the substrate include gate stacks and shallow
trench isolation structures.
[0054] In any of the steps described herein, transferring a pattern
from an overlying level to an underlying level involves forming
features in the underlying level that generally correspond to
features in the overlying level. For example, the path of lines in
the underlying level will generally follow the path of lines in the
overlying level and the location of other features in the
underlying level will correspond to the location of similar
features in the overlying level. The precise shapes and sizes of
features can vary from the overlying level to the underlying level,
however. For example, depending upon etch chemistries and
conditions, the sizes of and relative spacings between the features
forming the transferred pattern can be enlarged or diminished
relative to the pattern on the overlying level, while still
resembling the same initial "pattern," as can be seen from the
example of shrinking the first resist mask in the embodiments
described below. Thus, even with some changes in the dimensions of
features, the transferred pattern is still considered to be the
same pattern as the initial pattern. In contrast, forming spacers
around mask features can change the pattern.
[0055] Reference will now be made to the Figures, wherein like
numerals refer to like parts throughout. It will be appreciated
that these Figures are not necessarily drawn to scale.
[0056] In a first phase of methods according to the preferred
embodiments, a sequence of layers of materials is formed that allow
formation of a mask for processing a substrate.
[0057] FIG. 2A shows a top view of a portion of an integrated
circuit 100. While the preferred embodiments can be used to form
any integrated circuit, they are particularly advantageously
applied to form devices having arrays of electrical devices,
including memory cell arrays for volatile and non-volatile memory
devices such as DRAM, ROM or flash memory, including NAND flash
memory, or integrated circuits having logic or gate arrays. For
example, the logic array can be a field programmable gate array
(FPGA) having a core array similar to a memory array and a
periphery with supporting logics. Consequently, the integrated
circuit 100 can be, e.g., a memory chip or a processor, which can
include both a logic array and embedded memory, or any other
integrated circuit having a logic or a gate array.
[0058] With continued reference to FIG. 2A, a central region 102,
the "array," is surrounded by a peripheral region 104, the
"periphery." It will be appreciated that, in a fully formed
integrated circuit 100, the array 102 will typically be densely
populated with conducting lines and electrical devices such as
transistors and capacitors. In a memory device, the electrical
devices form a plurality of memory cells, which are typically
arranged in a regular grid pattern at the intersection of word
lines and bit lines. Desirably, pitch multiplication can be used to
form features such as rows/columns of transistors and capacitors in
the array 102, as discussed below. On the other hand, the periphery
104 typically comprises features larger than those in the array
102. Conventional photolithography, rather than pitch
multiplication, is preferably used to pattern features, such as
logic circuitry, in the periphery 104, because the geometric
complexity of logic circuits located in the periphery 104 makes
using pitch multiplication difficult, whereas the regular grid
typical of array patterns is conducive to pitch multiplication. In
addition, some devices in the periphery require larger geometries
due to electrical constraints, thereby making pitch multiplication
less advantageous than conventional photolithography for such
devices. In addition to possible differences in relative scale, it
will be appreciated by the skilled artisan that the relative
positions, and the number of periphery 104 and array 102 regions in
the integrated circuit 100 may vary from that depicted.
[0059] FIG. 2B shows a cross-sectional side view of the partially
formed integrated circuit 100. Various masking layers 120-160 are
preferably provided above a substrate 110. The layers 120-160 will
be etched to form a mask for patterning the substrate 110, as
discussed below.
[0060] The materials for the layers 120-160 overlying the substrate
110 are preferably chosen based upon consideration of the chemistry
and process conditions for the various pattern forming and pattern
transferring steps discussed herein. Because the layers between a
topmost selectively definable layer 120 and the substrate 110
preferably function to transfer a pattern derived from the
selectively definable layer 120 to the substrate 110, the layers
130-160 between the selectively definable layer 120 and the
substrate 110 are preferably chosen so that they can be selectively
etched relative to other exposed materials. It will be appreciated
that a material is considered selectively, or preferentially,
etched when the etch rate for that material is at least about 2-3
times greater, preferably at least about 10 times greater, more
preferably at least about 20 times greater and, most preferably, at
least about 40 times greater than that for surrounding materials.
Because a goal of the layers 120-155 overlying the primary hard
mask layer 160 is to allow well-defined patterns to be formed in
that layer 160, it will be appreciated that one or more of the
layers 120-155 can be omitted or substituted if suitable other
materials, chemistries and/or process conditions are used. For
example, the layer 130 can be omitted in some embodiments where the
resolution enhancement properties of that layer, as discussed
below, are not desired.
[0061] In the illustrated embodiment, the selectively definable
layer 120 overlies a first hard mask, or etch stop, layer 130,
which overlies a temporary layer 140, which overlies a second
(upper) hard mask, or etch stop, layer 150, which overlies a third
(lower) hard mask layer 155, which overlies a primary mask layer
160, which overlies the substrate 110 to be processed (e.g.,
etched) through a mask. Preferably, the mask through which the
substrate 110 is processed is formed in the third hard mask layer
155 or in the primary mask layer 160.
[0062] With continued reference to FIG. 2B, the selectively
definable layer 120 is preferably photodefinable, e.g., formed of a
photoresist, including any photoresist known in the art. For
example, the photoresist can be any photoresist compatible with 157
nm, 193 nm, 248 nm or 365 nm wavelength systems, 193 nm wavelength
immersion systems, extreme ultraviolet systems (including 13.7 nm
wavelength systems) or electron beam lithographic systems. In
addition, maskless lithography, or maskless photolithography, can
be used to define the selectively definable layer 120. Examples of
preferred photoresist materials include argon fluoride (ArF)
sensitive photoresist, i.e., photoresist suitable for use with an
ArF light source, and krypton fluoride (KrF) sensitive photoresist,
i.e., photoresist suitable for use with a KrF light source. ArF
photoresists are preferably used with photolithography systems
utilizing relatively short wavelength light, e.g., 193 nm. KrF
photoresists are preferably used with longer wavelength
photolithography systems, such as 248 nm systems. In other
embodiments, the layer 120 and any subsequent resist layers can be
formed of a resist that can be patterned by nano-imprint
lithography, e.g., by using a mold or mechanical force to pattern
the resist.
[0063] The material for the first hard mask layer 130 preferably
comprises an inorganic material. Exemplary materials include
silicon oxide (SiO.sub.2), silicon or a dielectric anti-reflective
coating (DARC), such as a silicon-rich silicon oxynitride.
Preferably, the first hard mask layer 130 is a dielectric
anti-reflective coating (DARC). Using DARCs for the first hard mask
layer 130 can be particularly advantageous for forming patterns
having pitches near the resolution limits of a photolithographic
technique. The DARCs can enhance resolution by minimizing light
reflections, thus increasing the precision with which
photolithography can define the edges of a pattern.
[0064] The temporary layer 140 is preferably formed of amorphous
carbon, which, as noted above, offers very high etch selectivity
relative to the preferred hard mask materials. More preferably, the
amorphous carbon is a form of amorphous carbon that is highly
transparent to light and that offers further improvements for photo
alignment by being transparent to the wavelengths of light used for
such alignment. Deposition techniques for forming such transparent
carbon can be found in A. Helmbold, D. Meissner, Thin Solid Films,
283 (1996) 196-203, the entire disclosure of which is incorporated
herein by reference.
[0065] The combination of materials for the second and third hard
mask layers 150 and 155 are preferably chosen based upon the
material used for the spacers and for the underlying layer 160. As
discussed below, the layer 160 is preferably formed of amorphous
carbon. Exemplary combinations of the other materials are listed in
the table below: TABLE-US-00001 Exemplary Spacer and Hard Mask
Materials Spacer material: Oxide Nitride Amorphous silicon Carbon
Hard mask materials Amorphous Amorphous Oxide/amorphous Amorphous
(Second hard mask/ silicon/oxide silicon/oxide or silicon
silicon/oxide or Third hard mask): oxide/amorphous oxide/amorphous
silicon silicon
[0066] It will be appreciated that the oxide is preferably a form
of silicon oxide and the nitride is typically silicon nitride.
Where the spacer material is carbon, the temporary layer is
preferably a material that is preferentially etchable relative to
the carbon. For example, the temporary layer can be formed of a
silicon-containing material. Depending on the selection of
appropriate etch chemistries and neighboring materials, examples of
other hard mask materials include amorphous carbon and etchable
high-K materials.
[0067] In the illustrated embodiment, the second hard mask layer
150 is formed of silicon, e.g., amorphous silicon. The third hard
mask layer 155 is formed of a silicon oxide, e.g., a low silane
oxide (LSO). The LSO is formed by chemical vapor deposition using a
relatively low silane flow and a relatively high N.sub.2O precursor
flow. Advantageously, such a deposition can be performed at
relatively low temperatures, e.g., less than about 550.degree. C.
and, more preferably, less than about 400.degree. C., to prevent
damage to the underlying primary mask layer 160, when the layer 160
is formed of a temperature-sensitive material. It will be
appreciated that oxides can typically be etched with greater
selectivity relative to silicon than nitrides. For example, etch
chemistries for oxides can remove the oxides at a rate more than 10
times faster than amorphous silicon, while etch chemistries for
nitrides typically only remove the nitrides at a rate of about 3
times faster than amorphous silicon. As a result, both the spacers
and the third hard mask layer are preferably formed of the same
material, an oxide, when the second hard mask layer is formed of
amorphous silicon.
[0068] As noted above, the primary mask layer 160 is preferably
formed of amorphous carbon due to its excellent etch selectivity
relative to many materials. As noted above, amorphous carbon is
particularly advantageous for transferring patterns to difficult to
etch substrates, such as a substrate 110 comprising multiple
materials or multiple layers of materials, or for forming small and
high aspect ratio features.
[0069] In addition to selecting appropriate materials for the
various layers, the thicknesses of the layers 120-160 are
preferably chosen depending upon compatibility with the etch
chemistries and process conditions described herein. As discussed
above, when transferring a pattern from an overlying layer to an
underlying layer by selectively etching the underlying layer,
materials from both layers are removed to some degree. Thus, the
upper layer is preferably thick enough so that it is not worn away
over the course of the pattern transfer.
[0070] In the illustrated embodiment, the photodefinable layer 120
is preferably about 50-300 nm thick and, more preferably, about
200-250 nm thick. It will be appreciated that, in cases where the
layer 120 is a photoresist, this thickness can vary depending upon
the wavelength of light used to pattern the layer 120. A thickness
of about 50-300 nm thick and, more preferably, about 200-250 nm
thick is particularly advantageous for 248 nm wavelength
systems.
[0071] The first hard mask layer 130 is preferably about 10-40 nm
thick and, more preferably, about 15-30 nm thick. The temporary
layer 140 is preferably about 50-200 nm thick and, more preferably,
about 80-120 nm thick. The second hard mask layer 150 is preferably
about 20-80 nm thick and, more preferably, about 30-50 nm thick and
the third hard mask layer 155 is preferably about 10-50 nm thick
and, more preferably, about 20-30 nm thick.
[0072] As discussed above, the thickness of the primary mask layer
160 is preferably chosen based upon the selectivity of the etch
chemistry for etching the substrate and based upon the materials
and complexity of the substrate. Advantageously, it has been found
that a thickness of preferably about 100-500 nm and, more
preferably, about 200-300 nm is particularly effective for
transferring patterns to a variety of substrates, including
substrates having a plurality of different materials to be etched
during the transfer.
[0073] For example, FIG. 2C shows an exemplary substrate 160
comprising a plurality of layers which can be etched to form
control gate stacks. A silicide layer 110a overlies a polysilicon
layer 110b, which overlies an oxide-nitride-oxide (ONO) composite
layer 110c, which overlies a polysilicon layer 110d.
[0074] The various layers discussed herein can be formed by various
methods. For example, spin-on-coating processes can be used to form
photodefinable layers. Various vapor deposition processes, such as
chemical vapor deposition, can be used to form hard mask
layers.
[0075] Preferably, a low temperature chemical vapor deposition
(CVD) process is used to deposit the hard mask layers or any other
materials, e.g., spacer material, over the primary mask layer 160,
especially in cases where the primary mask layer 160 is formed of
amorphous carbon.
[0076] Advantageously, it has been found that the second and third
hard mask layers 150 and 155 can be deposited at temperatures of
less than about 550.degree. C. and, more preferably,. less than
about 450.degree. C. and, most preferably, less than about
400.degree. C. Such low temperature deposition processes
advantageously prevent chemical or physical disruption of the
amorphous carbon layer(s).
[0077] For example, a LSO, e.g., for forming either the layers 150
or 155, can be deposited by a plasma enhanced CVD (PECVD) process.
Various processing systems made by various manufacturers can be
used to perform the process, as known in the art. A non-limiting
example of a suitable reactor system is the Applied Materials'
Producer.TM. system. In one example of process conditions,
SiH.sub.4 is preferably flowed into the reactor at a rate of about
50-250 sccm and, more preferably, about 150 sccm. N.sub.2O is
flowed into the reactor at a rate of about 400-1000 sccm and, more
preferably, about 750 sccm, and He is flowed into the reactor at a
rate of about 2500-4000 sccm and, more preferably, about 3500 sccm.
The pressure within reactor is preferably maintained at about 4-8
torr and, more preferably, about 6.5 torr. The RF power is
preferably about 50-200 watts and, more preferably, about 110
watts. The spacing is preferably about 400-600 mils and, more
preferably, about 450 mils. Advantageously, it has been found that
the LSO can be deposited at a temperature of about 250-450.degree.
C. and, more preferably, about 375.degree. C.
[0078] It has been found that amorphous silicon, e.g., for forming
the other of the layers 150 or 155 can also be deposited at low
temperatures by a plasma enhanced CVD (PECVD) process. In one
example, SiH.sub.4 and He are delivered to the reactor in an
Applied Materials' Producer.TM. system. The SiH.sub.4 is preferably
flowed at about 80-300 sccm and, more preferably, about 150 sccm.
The He is flowed at about 400-300 sccm and, more preferably, about
1800 sccm. The pressure within the reactor is preferably about 3-5
torr and, more preferably, about 3.5 torr and the RF power is
preferably about 50-200 watts and, more preferably, about 100
watts. The spacing is preferably about 400-600 mils and, more
preferably, about 450 mils. Advantageously, the amorphous silicon
can be deposited at a temperature of about 250-450.degree. C., and,
more preferably, about 375.degree. C.
[0079] In addition, the amorphous carbon layers can be formed by
chemical vapor deposition using a hydrocarbon compound, or mixtures
of such compounds, as carbon precursors. Exemplary precursors
include propylene, propyne, propane, butane, butylene, butadiene
and acetelyne. A suitable method for forming amorphous carbon
layers is described in U.S. Pat. No. 6,573,030 B1, issued to
Fairbairn et al. on Jun. 3, 2003, the entire disclosure of which is
incorporated herein by reference. In addition, the amorphous carbon
may be doped. A suitable method for forming doped amorphous carbon
is described in U.S. patent application Ser. No. 10/652,174 to Yin
et al., the entire disclosure of which is incorporated herein by
reference.
[0080] In a second phase of methods according to the preferred
embodiments, a pattern of spacers is formed by pitch
multiplication.
[0081] With reference to FIGS. 3A and 3B, a pattern comprising
spaces or trenches 122, which are delimited by photodefinable
material features 124, is formed in the photodefinable layer 120.
The trenches 122 can be formed by, e.g., photolithography with 248
nm or 193 nm light, in which the layer 120 is exposed to radiation
through a reticle and then developed. After being developed, the
remaining photodefinable material, photoresist in the illustrated
embodiment, forms mask features such as the illustrated lines 124
(shown in cross-section only).
[0082] The pitch of the resulting lines 124 is equal to the sum of
the width of a line 124 and the width of a neighboring space 122.
To minimize the critical dimensions of features formed using this
pattern of lines 124 and spaces 122, the pitch can be at or near
the limits of the photolithographic technique used to pattern the
photodefinable layer 120. For example, for photolithography
utilizing 248 nm light, the pitch of the lines 124 can be about 100
nm. Thus, the pitch may be at the minimum pitch of the
photolithographic technique and the spacer pattern discussed below
can advantageously have a pitch below the minimum pitch of the
photolithographic technique. Alternatively, because the margin of
error for position and feature size typically increases as the
limits of a photolithographic technique are approached, the lines
124 can be formed having larger feature sizes, e.g., 200 nm, to
minimize errors in the position and sizes of the lines 124.
[0083] As shown in FIGS. 4A and 4B, the spaces 122 are preferably
widened by etching the photoresist lines 124, to form modified
spaces 122a and lines 124a. The photoresist lines 124 are
preferably etched using an isotropic etch to "shrink" those
features. Suitable etches include etches using an oxygen-containing
plasma, e.g., a SO.sub.2/O.sub.2/N.sub.2/Ar plasma, a
Cl.sub.2/O.sub.2/He plasma or a HBr/O.sub.2/N.sub.2 plasma. The
extent of the etch is preferably selected so that the widths of the
lines 124a are substantially equal to the desired spacing between
the later-formed spacers 175, as will be appreciated from the
discussion below. For example, the width of the lines 124 can be
reduced to from about 80-120 nm to about 40-70 nm. Advantageously,
the width-reducing etch allows the lines 124a to be narrower than
would otherwise be possible using the photolithographic technique
used to pattern the photodefinable layer 120. In addition, the etch
can smooth the edges of the lines 124a, thus improving the
uniformity of those lines. While the critical dimensions of the
lines 124a can be etched below the resolution limits of the
photolithographic technique, it will be appreciated that this etch
does not alter the pitch of the spaces 122a and lines 124a, since
the distance between identical points in these features remains the
same.
[0084] With reference to FIG. 5, the pattern in the (modified)
photodefinable layer 120a is transferred to the hard mask layer
130. This transfer is preferably accomplished using an anisotropic
etch, such as an etch using a fluorocarbon plasma, although a wet
(isotropic) etch may also be suitable if the hard mask layer 130 is
thin. Preferred fluorocarbon plasma etch chemistries include
CFH.sub.3, CF.sub.2H.sub.2, CF.sub.3H and CF.sub.4/HBr.
[0085] With reference to FIG. 6, the pattern in the photodefinable
layer 120a and the hard mask layer 130 is transferred to the
temporary layer 140 to allow for deposition of a layer 170 of
spacer material (FIG. 8). It has been found that the temperatures
used for spacer material deposition are typically too high for
photoresist to withstand. Thus, the pattern is preferably
transferred from the photodefinable layer 120a to the temporary
layer 140, which is formed of a material that can withstand the
process conditions for spacer material deposition and etch,
discussed below. In addition to having higher heat resistance than
photoresist, the material forming the temporary layer 140 is
preferably selected such that it can be selectively removed
relative to the material for the spacers 175 (FIG. 10) and the
underlying etch stop layer 150. As noted above, the layer 140 is
preferably formed of amorphous carbon and, more preferably,
transparent carbon.
[0086] The pattern in the modified photodefinable layer 120a is
preferably transferred to the temporary layer 140 using a
O.sub.2-containing plasma, e.g., a plasma containing SO.sub.2,
O.sub.2 and Ar. Other suitable etch chemistries include a
Cl.sub.2/O.sub.2/SiCl.sub.4 or SiCl.sub.4/O.sub.2/N.sub.2 or
HBr/O.sub.2/N.sub.2/SiCl.sub.4 containing plasma. Advantageously,
the SO.sub.2-containing plasma is used as it can etch carbon of the
preferred temporary layer 140 at a rate greater than 20 times and,
more preferably, greater than 40 times the rate that the hard mask
layer 130 is etched. A suitable SO.sub.2-containing plasma is
described in U.S. patent application Ser. No. 10/931,772 to
Abatchev et al., filed Aug. 31, 2004, the entire disclosure of
which is incorporate herein by reference. It will be appreciated
that the SO.sub.2-containing plasma can simultaneously etch the
temporary layer 140 and also remove the photodefinable layer 120a.
The resulting lines 124b constitute the placeholders or mandrels
along which a pattern of spacers 175 (FIG. 10) will be formed.
[0087] With reference to FIG. 7, the hard mask layer 130 can be
removed to facilitate later spacer formation by leaving the
temporary layer 140 exposed for subsequent etching (FIG. 10). The
hard mask layer 130 can be removed using a buffered oxide etch
(BOE), which is a wet etch comprising HF and NH.sub.4F.
[0088] Next, as shown in FIG. 8, a layer 170 of spacer material is
preferably blanket deposited conformally over exposed surfaces,
including the hard mask layer 150 and the top and sidewalls of the
temporary layer 140. The spacer material can be any material that
can act as a mask for transferring a pattern to the underlying hard
mask layer 150. The spacer material preferably: 1) can be deposited
with good step coverage; 2) can be deposited at a temperature
compatible with the temporary layer 140; and 3) can be selectively
etched relative to the temporary layer 140 and underlying hard mask
layer 150. Preferred materials include silicon, silicon oxides and
silicon nitrides. In the illustrated embodiment, the spacer
material is silicon oxide, which provides particular advantages in
combination with other selected materials of the masking stack.
[0089] Preferred methods for spacer material deposition include
chemical vapor deposition, e.g., using O.sub.3 and TEOS to form
silicon oxide, and atomic layer deposition, e.g., using a silicon
precursor with an oxygen or nitrogen precursor to form silicon
oxides and nitrides, respectively. The thickness of the layer 170
is preferably determined based upon the desired width of the
spacers 175 (FIG. 10). For example, in the one exemplary
embodiment, the layer 170 is preferably deposited to a thickness of
about 20-80 nm and, more preferably, about 40-60 nm. Preferably,
the step coverage is about 80% or greater and, more preferably,
about 90% or greater.
[0090] With reference to FIGS. 9A and 9B, the silicon oxide spacer
layer 170 is then subjected to an anisotropic etch to remove spacer
material from horizontal surfaces 180 of the partially formed
integrated circuit 100. Such an etch, also known as a spacer etch,
can be performed using a fluorocarbon plasma, e.g., containing
CF.sub.4/CHF.sub.3, C.sub.4F.sub.8/CH.sub.2F.sub.2 or CHF.sub.3/Ar
plasma.
[0091] With reference to FIG. 10, the temporary layer 140 is next
removed to leave freestanding spacers 175. The temporary layer 140
is selectively removed using an organic strip process. Preferred
etch chemistries include a oxygen-containing plasma etch, such as
an etch using SO.sub.2.
[0092] Thus, pitch multiplication has been accomplished. In the
illustrated embodiment, the pitch of the spacers 175 is roughly
half that of the photoresist lines 124 and spaces 122 (FIG. 3A)
originally formed by photolithography. Where the photoresist lines
124 had a pitch of about 200 nm, spacers 175 having a pitch of
about 100 nm or less can be formed. It will be appreciated that
because the spacers 175 are formed on the sidewalls of the features
or lines 124b, the spacers 175 generally follow the outline of the
pattern of features or lines 124a in the modified photodefinable
layer 120a and, so, typically form a closed loop in the spaces 122a
between the lines 124a. The spacers 175 form a first pattern
177.
[0093] Next, in a third phase of methods according to the preferred
embodiments, a second pattern is formed over the first pattern 177.
Preferably, the second pattern comprises features having larger
critical dimensions than the first pattern 177. In addition, the
second pattern can be formed completely, partially, or not
overlapping the first pattern 177.
[0094] To allow the second pattern to be formed, a planar surface
is formed by depositing a planarizing material around the spacers
175 to form a planarizing layer 200, as shown in FIG. 11. A
selectively definable layer 220 is then formed on the planarizing
material to allow for patterning of the second pattern at the
periphery 104.
[0095] The planarizing layer 200 is preferably at least as tall as
the spacers 175. In addition, the protective layer 200 is
preferably formed of a material that can be selectively etched
relative to both the spacers 175 and the selectively definable
layer 220. For example, the planarizing layer 200 can be formed of
a spin-on anti-reflective coating, such as a bottom anti-reflective
coating (BARC).
[0096] As with the selectively definable layer 120, the selectively
definable layer 220 is preferably photodefinable, e.g., formed of a
photoresist, including any photoresist known in the art. In
addition, in other embodiments, the layer 220 can be formed of a
resist suitable for patterning by nano-imprint lithography.
[0097] In some preferred embodiments, the planarizing layer 200 can
be omitted and the selectively definable layer 220 can be formed
directly on and around the spacers 175. Such a scheme can be
employed where the patterns can be defined in the layer 220 with
good integrity and where the resolution enhancement properties of
an anti-reflective coating are not desired. For example, the
anti-reflective coating can be omitted if the material underlying
the selectively definable layer 220 is sufficiently
non-reflective.
[0098] With reference to FIG. 12, the photodefinable layer 220 is
patterned using, e.g., the same photolithographic technique used to
pattern the photodefinable layer 120. Thus, a pattern 230 is formed
in the photodefinable layer 220. Where the pattern 230 is used to
mask features in the periphery 104, the area in the photodefinable
layer 220 in the array 102 is preferably open, as illustrated. As
noted above, however, while illustrated laterally adjacent the
pattern 177, the pattern 230 can partially or completely overlap
the pattern 177 or be completely separated from the pattern 177.
Thus, the use of different reference numerals (177 and 230) for
these patterns indicates that they were originally formed in
different steps.
[0099] While the pattern 177 preferably has a pitch or feature size
smaller than the minimum pitch or resolution of the
photolithographic technique used in forming it, the pattern 230
preferably has a pitch or feature size equal to or greater than the
minimum pitch or resolution of the photolithographic technique used
to form that pattern. It will be appreciated that the pattern 230
at the periphery 104 can be used to form landing pads, transistors,
local interconnects, etc.
[0100] In a fourth phase of methods according to the preferred
embodiments, the patterns 177 and 230 are consolidated on one level
below the spacers and simultaneously transferred to the substrate
110.
[0101] With reference to FIG. 13, the pattern 230 is transferred to
the same level as the pattern 177 of spacers 175. An anisotropic
BARC etch is performed to define the periphery features in the
protective layer 210 and to also open up the array features. The
parts of the protective layer 210 that are unprotected by parts of
the photodefinable layer 220 are preferably selectively etched
using an anisotropic etch, using, e.g., a HBr/O.sub.2 plasma or a
SO.sub.2-containing plasma. This etch preferentially removes the
protective layer 200 around the oxide spacers 175, thereby leaving
those spacers 175 exposed.
[0102] With reference to FIGS. 14-16, the second and third hard
mask layers are etched to transfer the patterns 177 and 230 down to
the primary mask layer 160, to form a mixed pattern in the primary
mask layer 160. With reference to FIG. 14, the patterns 177 and 230
are first both transferred to the second hard mask layer 150. Where
the second hard mask 150 is formed of amorphous silicon, it is
preferably anisotropically etched using, e.g., a HBr and Cl.sub.2
containing plasma. Such an etch preferably etches the amorphous
silicon at a rate greater than about 5 times and, more preferably,
greater than about 10 times the rate at which the silicon oxide
spacers 175 and silicon oxide third hard mask 155 can be
etched.
[0103] With reference to FIG. 15, the first and second patterns 177
and 230 are cleaned. As noted above, the carbon material forming
the photoresist and DARC layers 220 and 210 can polymerize upon
contact with etchants. For example, the HBr/Cl.sub.2 etch of the
second hard mask layer 150 can cause parts of the layers 220 and
210 to polymerize and leave a residue around features in the second
hard mask layer 150, causing a pattern having undesirably
non-uniform features. Thus, the patterns 177 and 230 are preferably
cleaned by stripping off an organic material. The strip can be
accomplished using, e.g., an isotropic etch with O.sub.2
plasma.
[0104] With reference to FIG. 16, the patterns 177 and 230 are then
both transferred to the third hard mask layer 155. Where the third
hard mask 155 is formed of a LSO, it is preferably anisotropically
etched using, e.g., a fluorocarbon plasma. The fluorocarbon plasma
preferably includes C.sub.4F.sub.8, CH.sub.2F.sub.2, Ar and O.sub.2
and can preferably etch the silicon oxide and the amorphous carbon
at equal rates and, more preferably, can etch the silicon oxide at
a rate greater than about 10 times the rate at which the amorphous
silicon layer 150 is etched.
[0105] With reference to FIG. 17, the patterns 177 and 230 are
transferred to the primary mask layer 160. The transfer is
preferably accomplished by anisotropically etching the primary mask
layer 160, preferably using a SO.sub.2-containing plasma. Other
suitable etch chemistries include a Cl.sub.2/O.sub.2,
HBr/O.sub.2/N.sub.2 or SiCl.sub.4/O.sub.2N.sub.2/HBr or
SiCl.sub.4/O.sub.2-containing plasma. As noted above, the
SO.sub.2-containing plasma is preferably used as it has been found
to have excellent selectivity for the amorphous carbon of the
primary mask layer 160 relative to the hard mask layers 150 and
155. Thus, a thick enough mask can be formed in the primary mask
layer 160 to later effectively transfer the mask pattern to the
substrate 110, particularly through multiple materials of the
substrate using selective etch chemistries and without wearing away
the primary mask layer 160 before the pattern transfer is
complete.
[0106] With reference to FIG. 18, after being transferred to the
primary mask layer 160, the patterns 177 and 230 are transferred to
the substrate 110 using the layer 160 as a mask. Given the
disparate materials typically used for the primary mask layer 160
and the substrate 110 (e.g., amorphous carbon and silicon or
silicon compounds, respectively), the pattern transfer can be
readily accomplished using etch chemistries appropriate for etching
the material or materials of the substrate 110. For example, a
fluorocarbon etch comprising CF.sub.4, CHF.sub.3 and/or NF.sub.3
containing plasma can be used to etch silicon nitride, a
fluorocarbon etch comprising CF.sub.4, CHF.sub.3, CH.sub.2F.sub.2
and/or C.sub.4F.sub.8 containing plasma can be used to etch silicon
oxide and a HBr, Cl.sub.2, NF.sub.3, SF.sub.6 and/or CF.sub.4
containing plasma etch can be used to etch silicon. In addition,
the skilled artisan can readily determine suitable etch chemistries
for other substrate materials, such as conductors, including
aluminum, transition metals, and transition metal nitrides. For
example, an aluminum substrate can be etched using a fluorocarbon
etch.
[0107] It will be appreciated that where the substrate 110
comprises layers of different materials, a succession of different
chemistries, preferably dry-etch chemistries, can be used to
successively etch through these different layers, if a single
chemistry is not sufficient to etch all the different materials. It
will also be appreciated that, depending upon the chemistry or
chemistries used, the spacers 175 and the hard mask layer 150 may
be etched. Using amorphous carbon for the primary mask layer 160,
however, advantageously offers excellent resistance to conventional
etch chemistries, especially those used for etching
silicon-containing materials. Thus, the primary mask layer 160 can
effectively be used as a mask for etching through a plurality of
substrate layers, or for forming high aspect ratio trenches. In
addition, the pitch doubled pattern 177 and the pattern 230 formed
by conventional lithography can simultaneously be transferred to
the substrate 110, or each individual layer of the substrate 110,
in a single etch step.
[0108] In one example, the sequence of substrate layers 110a-110d
can be etched using various etch chemistries, which preferably
anisotropically etch the various layers. The silicide layer 110a
can be etched using a Cl.sub.2/CF.sub.4 plasma at a pressure of
about 3-10 mTorr, with about 200-350 watt source power and about
50-100 watt bias power; the polysilicon layer 110b can etched be
using a HBr/Cl.sub.2 plasma at a pressure of about 10-30 mTorr,
with about 300-500 watt source power and about 20-50 watt bias
power; the oxide-nitride-oxide (ONO) composite layer 110c can be
etched using a CF.sub.4/CH.sub.2F.sub.2/He plasma at a pressure of
about 5-10 mTorr, with about 600-1000 watt soruce power and about
200-400 watt bias power; and the polysilicon layer 110d can be
etched using a HBr/He/O.sub.2 plasma at a pressure of about 40-80
mTorr, with about 250-400 watt soruce power and about 50-100 watt
bias power.
[0109] With reference to FIG. 19, in some preferred embodiments,
the spacers 175 can be removed before using the primary mask layer
160 to transfer the patterns 177 and 230 to the substrate 110. The
removal is preferably performed using an etch selective for the
spacers 175. For example, where the spacers 175 comprise a silicon
oxide, the spacer removal can be accomplished using a wet or dry
etch, e.g., a wet buffered oxide etch or a dry etch using a
CH.sub.2F.sub.2/C.sub.4F.sub.8/Ar/O.sub.2 plasma. As noted above,
this spacer removal can advantageously straighten and/or stabilize
the profile of the features forming the patterns 177 and 230,
especially where the features are taller than optimal for etching
the substrate 110.
[0110] FIG. 20 shows a structure resulting after etching the
substrate 110. As noted above, the substrate 110 can be any layer
of material or materials that the patterns 177 and 230 are etched
into. The composition of the substrate 110 can depend upon, e.g.,
the electrical device to be formed. Thus, in FIG. 19, the substrate
110 comprises a silicide layer 110a, a polysilicon layer 110b, an
oxide-nitride-oxide (ONO) composite layer 110c and a floating gate
(FG) polysilicon layer 110d. On the right hand side of the figure,
this sequence of layers forms a source select gate (SG) control
line 110e. Note that all the illustrated features are located in
the array, although the SG control line 110e has a relatively large
critical dimension due to being defined using the pattern 230. Such
an arrangement of layers can be advantageously used in the
formation of, e.g., a control gate stack for NAND flash memory.
[0111] Note that the etched surfaces exhibit exceptionally low edge
roughness. In addition, the trenches formed in the array show
excellent uniformity, even at the low 100 nm pitch (50 nm feature
size) pictured. Advantageously, these results are achieved while
also forming well-defined and smooth lines in the periphery, which
can have a width significantly greater than about 100 nm, e.g.,
about 250 nm in the illustrated structure.
[0112] It will be appreciated that the formation of patterns
according to the preferred embodiments offers numerous advantages.
For example, the ability to deposit the second and third hard mask
layers 150 and 155 at low temperatures of, e.g., less than about
550.degree. C., more preferably, less than about 400.degree. C.
maintains the structural and chemical integrity of the amorphous
carbon layer 160. Moreover, the third hard mask layer 155 can
provide a buffer to protect the amorphous carbon layer 160 from
etch chemistries employed for overlying materials. Advantageously,
the third hard mask layer 155 allows overlying patterns to be
cleaned without undesirably etching the amorphous carbon layer 160.
Thus, the definition of the patterns can be improved and unwanted
materials, such as polymerized. organics, can be effectively
removed.
[0113] In addition, because multiple patterns, with
differently-sized features, can be consolidated on a single final
mask layer before being transferred to a substrate, overlapping
patterns can easily be transferred to the substrate. Thus,
pitch-doubled features and features formed by conventional
photolithography can easily be formed connected to each other.
Moreover, as evident in FIG. 20, exceptionally small features can
be formed, while at the same time achieving exceptionally low line
edge roughness. While not limited by theory, it is believed that
such low line edge roughness is the result of the use of the layers
140 and 160. Forming the spacers 175 and performing multiple
anisotropic etches to transfer the patterns 177 and 230 from the
level of the temporary layer 140 to the primary mask layer 160 and
then to the substrate 110 are believed to beneficially smooth the
surfaces of the features forming the patterns 177 and 230.
Moreover, the preferred amorphous carbon etch chemistries disclosed
herein allow the use of thin hard mask layers, such as the layers
130, 150, and 155 relative to the depth that underlying amorphous
carbon layers, such as the layers 140 and 160, are etched. This
advantageously allows the layers 140 and 160 to be more easily and
effectively etched. In addition, demands on the identity and etch
selectivity for the layers (e.g., the photoresist layers in FIG. 5)
overlying the hard mask layers are reduced, since the hard mask
layers 130, 150 and 155 do not need to be etched to a great
depth.
[0114] It will also be appreciated that various modifications of
the illustrated process flow are possible. For example, pitch
multiplied patterns typically formed closed loops, since the
patterns are formed by spacers that formed along the wall of a
mandrel. Consequently, where the pitch multiplied pattern is used
to form conductive lines, additional processing steps are
preferably used to cut off the ends of these loops, so that each
loop forms two individual, non-connected lines. This can be
accomplished, for example, by forming a protective mask around the
parts of the lines to be maintained, while etching away the
unprotected ends of the masks. A suitable method for cutting off
the ends of the loops is disclosed in U.S. patent application Ser.
No. 10/931,771 to Tran et al., filed Aug. 31, 2004, the entire
disclosure of which is incorporated be reference herein.
[0115] In addition to forming gate control stacks, it will be
appreciated that the preferred embodiments can be employed to form
interconnect lines and associated integrated circuit features, such
as landing pads. FIGS. 21A and 21B show top views of an integrated
circuit after the etching way the ends of the loops to form
individual conductive interconnects. FIG. 21A shows the ends of the
loops formed with landing pads for each interconnect, while FIG.
21B shows the other end of the interconnects. It will be
appreciated that the magnifications for each figure is different.
Methods for forming interconnects and landing pads are disclosed in
U.S. patent application Ser. No. 10/931,771 to Tran et al., filed
Aug. 31, 2004, the entire disclosure of which is incorporated
herein by reference.
[0116] It will also be appreciated that the pitch of the pattern
177 can be more than doubled. For example, the pattern 177 can be
further pitch multiplied by forming spacers around the spacers 175,
then removing the spacers 175, then forming spacers around the
spacers that were formerly around the spacers 175, and so on. An
exemplary method for further pitch multiplication is discussed in
U.S. Pat. No. 5,328,810 to Lowrey et al. In addition, while the
preferred embodiments can advantageously be applied to form
patterns having both pitch multiplied and conventionally
photolithographically defined features, the patterns 177 and 230
can both be pitch multiplied or can have different degrees of pitch
multiplication.
[0117] Moreover, more than two patterns 177 and 230 can be
consolidated on the primary mask layer 160 if desired. In such
cases, additional mask layers can be deposited between the layers
140 and 160. For example, the patterns 177 and 230 can be
transferred to an additional mask layer overlying the hard mask
layer 150 and then the sequence of steps illustrated in FIGS. 11-16
can be performed to protect the patterns 177 and 230, to form a new
pattern in an overlying photodefinable layer, and to transfer the
patterns to the substrate 110. The additional mask layer preferably
comprises a material that can be selectively etched relative to the
hard mask layer 150 and a protective layer that surrounds the
patterns 177 and 230 after being transferred to the additional mask
layer.
[0118] In addition, the preferred embodiments can be employed
multiple times throughout an integrated circuit fabrication process
to form pitch multiplied features in a plurality of layers or
vertical levels, which may be vertically contiguous or
non-contiguous and vertically separated. In such cases, each of the
individual levels to be patterned would constitute a substrate 110
and the various layers 120-220 can formed over the individual level
to be patterned. It will also be appreciated that the particular
composition and height of the various layers 120-220 discussed
above can be varied depending upon a particular application. For
example, the thickness of the layer 160 can be varied depending
upon the identity of the substrate 110, e.g., the chemical
composition of the substrate, whether the substrate comprises
single or multiple layers of material, the depth of features to be
formed, etc., and the available etch chemistries. In some cases,
one or more layers of the layer 120-220 can be omitted or more
layers can be added. For example, the layer 160 can be omitted in
cases where the hard mask layers 150 and/or 155 are sufficient to
adequately transfer a pattern to the substrate 110.
[0119] Also, while "processing" through the various mask layers
preferably involves etching an underlying layer, processing through
the mask layers can involve subjecting layers underlying the mask
layers to any semiconductor fabrication process. For example,
processing can involve ion implantation, diffusion doping,
depositing, or wet etching, etc. through the mask layers and onto
underlying layers. In addition, the mask layers can be used as a
stop or barrier for chemical mechanical polishing (CMP) or CMP can
be performed on any of the layers to allow for both planarization
and etching of the underlying layers, as discussed in U.S.
Provisional Patent Application No. 60/666,031, filed Mar. 28, 2005,
the entire disclosure of which is incorporated by reference
herein.
[0120] Accordingly, it will be appreciated by those skilled in the
art that various other omissions, additions and modifications may
be made to the methods and structures described above without
departing from the scope of the invention. All such modifications
and changes are intended to fall within the scope of the invention,
as defined by the appended claims.
* * * * *