U.S. patent application number 11/244930 was filed with the patent office on 2006-02-23 for supercritical carbon dioxide/chemical formulation for removal of photoresists.
Invention is credited to Thomas H. Baum, Eliodor G. Ghenciu, Michael B. Korzenski, Chongying Xu.
Application Number | 20060040840 11/244930 |
Document ID | / |
Family ID | 32175095 |
Filed Date | 2006-02-23 |
United States Patent
Application |
20060040840 |
Kind Code |
A1 |
Korzenski; Michael B. ; et
al. |
February 23, 2006 |
Supercritical carbon dioxide/chemical formulation for removal of
photoresists
Abstract
A photoresist cleaning composition for removing photoresist and
ion implanted photoresist from semiconductor substrates. The
cleaning composition contains supercritical CO.sub.2 (SCCO2) and
alcohol for use in removing photoresist that is not ion-implanted.
When the photoresist has been subjected to ion implantation, the
cleaning composition additionally contains a fluorine ion source.
Such cleaning composition overcomes the intrinsic deficiency of
SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2
and its associated inability to solubilize species such as
inorganic salts and polar organic compounds that are present in the
photoresist and that must be removed from the semiconductor
substrate for efficient cleaning. The cleaning composition enables
damage-free, residue-free cleaning of substrates having photoresist
or ion implanted photoresist thereon.
Inventors: |
Korzenski; Michael B.;
(Danbury, CT) ; Ghenciu; Eliodor G.; (King of
Prussia, PA) ; Xu; Chongying; (New Milford, CT)
; Baum; Thomas H.; (New Fairfield, CT) |
Correspondence
Address: |
INTELLECTUAL PROPERTY / TECHNOLOGY LAW
PO BOX 14329
RESEARCH TRIANGLE PARK
NC
27709
US
|
Family ID: |
32175095 |
Appl. No.: |
11/244930 |
Filed: |
October 6, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10285146 |
Oct 31, 2002 |
|
|
|
11244930 |
Oct 6, 2005 |
|
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Current U.S.
Class: |
510/175 |
Current CPC
Class: |
C11D 7/10 20130101; C11D
7/5022 20130101; C11D 7/3209 20130101; G03F 7/423 20130101; C11D
7/02 20130101; C11D 7/3281 20130101 |
Class at
Publication: |
510/175 |
International
Class: |
C11D 7/32 20060101
C11D007/32 |
Claims
1-41. (canceled)
42. A composition comprising supercritical carbon dioxide
(SCCO.sub.2), at least one alcohol, at least one fluorine source,
and at least one implanted cation, wherein said cleaning
composition is useful for removing ion-implanted photoresist from a
microelectronic device having such material thereon.
43. The composition of claim 42, wherein the at least one alcohol
comprises at least one C.sub.1-C.sub.4 alcohol.
44. The composition of claim 42, wherein the at least one alcohol
comprises methanol.
45. The composition of claim 42, wherein the concentration of the
at least one alcohol is from about 5 wt. % to about 20 wt. %, based
on the total weight of the composition.
46. The composition of claim 42, wherein said at least one fluorine
ion source includes at least one fluorine source reagent selected
from the group consisting of hydrogen fluoride (HF), amine
trihydrogen fluoride compounds of the formula NR.sub.3(HF).sub.3
wherein each R is independently selected from hydrogen and lower
alkyl, hydrogen fluoride-pyridine (pyr-HF), ammonium fluorides of
the formula R.sub.4NF, wherein each R is independently selected
from hydrogen and lower alkyl, other quaternary fluorides, xenon
difluoride, and fluoromethane.
47. The composition of claim 42, wherein the at least one fluorine
ion source has a concentration of from about 0.01 wt. % to about 5
wt. %, based on the total weight of the composition.
48. The composition of claim 42, wherein the at least one fluorine
ion source comprises pyr-HF.
49. The composition of claim 42, further comprising an oxidation
inhibitor.
50. The composition of claim 49, wherein the oxidation inhibitor
comprises boric acid.
51. The composition of claim 42, wherein said at least one
implanted cation comprises a cation selected from the group
consisting of a boron-containing cation, a phosphorus-containing
cation and an arsenic-containing cation.
52. A method of removing ion-implanted photoresist from a
microelectronic device having same thereon, said method comprising
contacting the ion-implanted photoresist with a cleaning
composition for sufficient time and under sufficient contacting
conditions to remove the ion-implanted photoresist from the
microelectronic device having same thereon, wherein said cleaning
composition comprises SCCO.sub.2, at least one alcohol, at least
one fluorine source, and at least one implanted cation.
53. The method of claim 52, wherein said contacting conditions
comprise elevated pressure.
54. The method of claim 53, wherein said elevated pressure
comprises pressure in a range of from about 1000 to about 7500
psi.
55. The method of claim 52, wherein said contacting conditions
comprise elevated temperature.
56. The method of claim 55, wherein said elevated temperature
comprises temperature in a range of from about 35.degree. C. to
about 100.degree. C.
57. The method of claim 52, wherein said contacting time is in a
range of from about 1 to about 30 minutes.
58. The method of claim 52, wherein the at least one alcohol
comprises at least one C.sub.1-C.sub.4 alcohol, and wherein said at
least one fluorine ion source includes at least one fluorine source
reagent selected from the group consisting of hydrogen fluoride
(HF), amine trihydrogen fluoride compounds of the formula
NR.sub.3(HF).sub.3 wherein each R is independently selected from
hydrogen and lower alkyl, hydrogen fluoride-pyridine (pyr-HF),
ammonium fluorides of the formula R.sub.4NF, wherein each R is
independently selected from hydrogen and lower alkyl, other
quaternary fluorides, xenon difluoride, and fluoromethane.
59. The method of claim 52, wherein the at least one fluorine ion
source comprises pyr-HF.
60. The method of claim 52, wherein the at least one alcohol source
comprises methanol.
61. The method of claim 52, wherein the concentration of the at
least one alcohol is from about 5 wt. % to about 20 wt. %, based on
the total weight of the composition, and wherein the at least one
fluorine ion source has a concentration of from about 0.01 wt. % to
about 5 wt. %, based on the total weight of the composition.
62. The method of claim 52, wherein said at least one implanted
cation comprises a cation selected from the group consisting of a
boron-containing cation, a phosphorus-containing cation, and an
arsenic-containing cation.
63. A method of removing ion implanted photoresist from a substrate
having same thereon, said method comprising contacting the
ion-implanted photoresist with a cleaning composition comprising
SCCO.sub.2, alcohol and a fluorine ion source, for sufficient time
and under sufficient contacting conditions to remove the ion
implanted photoresist from the substrate.
64. A composition comprising supercritical carbon dioxide
(SCCO.sub.2), at least one alcohol, and a complex formed by
reacting a fluorine ion source with implanted cations, wherein said
cleaning composition is useful for removing ion-implanted
photoresist from a microelectronic device having such material
thereon.
65. The composition of claim 64, wherein said implanted cations
comprise a cation selected from the group consisting of a
boron-containing cation, a phosphorus-containing cation and an
arsenic-containing cation.
Description
FIELD OF THE INVENTION
[0001] The present invention relates to supercritical carbon
dioxide-based compositions useful in semiconductor manufacturing
for the removal of photoresists, including photoresists per se and
ion-implanted photoresists, from substrates having such
photoresists thereon, and to methods of using such compositions for
removal of photoresists and ion-implanted photoresists from
semiconductor substrates.
DESCRIPTION OF THE RELATED ART
[0002] Semiconductor manufacturing involves the use of photoresists
that are applied to wafer substrates and subsequently developed to
produce specific patterned regions and structures on the wafer.
This processing may include exposure of the photoresist to deep UV
light and/or to high-dose ion implant, and the resulting
photoresist materials and their residues are difficult to
satisfactorily remove with conventional stripping and cleaning
methods such as plasma etching and wet-bench cleaning. High-dose
ion implant processing usually results in the formation of a tough,
carbonized crust, which protects the underlying bulk photoresist
from the cleaning process and reagents. Similar crusts are formed
after reactive ion etching (RIE) of patterned photoresists,
especially in microelectronic device structures with low-k
dielectric films.
[0003] Conventional methods of cleaning require an oxygen-plasma
ashing, often in combination with halogen gases, to penetrate the
crust and remove the photoresist. Typically, the plasma ashing
process requires a follow-up cleaning with wet chemicals and/or
dilute acids to remove residues and non-volatile contaminants that
remain after ashing. It is frequently necessary in such cleaning
operations to repeat the ashing and wet cleaning steps in an
alternating fashion for a number of successive treatment cycles in
order to effect complete removal of all photoresist, crust and
post-etch residues.
[0004] A number of problems and deficiencies of such ashing and wet
cleaning operations have been encountered in their application,
including: [0005] (1) popping of the photoresist (leading to
associated contamination of the semiconductor substrate) from the
substrate surface, as the heated, residual solvent in the bulk
photoresist vaporizes under the hardened crust; [0006] (2)
occurrence of residual metal contamination due to the presence of
non-volatile metal compounds implanted into the photoresist that
are not completely removed by the plasma ashing process; [0007] (3)
production of tough residues (of polymerized crust or highly
cross-linked polymer) that remain on the semiconductor substrate
despite the use of plasma ashing and wet chemical treatments; and
[0008] (4) necessity of repetitive cleaning steps that increase
photoresist stripping cycle times and work-in-process steps.
[0009] Subsequent to etching and optionally ashing of the exposed
photoresist, residue remains on the substrate. This residue must be
removed to ensure proper operation of the microelectronic device
that is the ultimate product of the semiconductor manufacturing
process, and to avoid interference or deficiency in relation to
subsequent process steps in the manufacturing process.
[0010] Significant and continuing efforts have been made in the
semiconductor manufacturing industry to develop improved
formulations for removing photoresists and residues thereof from
the semiconductor substrate. This effort has been frustrated by the
continuing and rapid decrease in critical dimensions.
[0011] As critical dimensions of chip architectures become smaller,
e.g., <100 nanometers, it becomes progressively more difficult
to remove photoresists and residues from patterned semiconductor
wafers with high aspect ratio trenches and vias. Conventional
wet-cleaning methods suffer substantial limitations as critical
dimension widths decrease below 100 nm due to the high surface
tension characteristics of liquids used in the cleaning solution.
Additionally, the use of aqueous cleaning solutions has the major
deficiency that the aqueous solutions can strongly affect important
material properties of porous low-k dielectric materials, including
mechanical strength, moisture uptake, coefficient of thermal
expansion, and adhesion to different substrates.
[0012] It would therefore be a significant advance in the art to
provide a cleaning composition that overcomes such deficiencies of
the prior and conventional cleaning compositions used for removal
of photoresists and ion-implanted photoresists on semiconductor
substrates.
SUMMARY OF THE INVENTION
[0013] The present invention relates to supercritical carbon
dioxide-based compositions useful in semiconductor manufacturing
for the removal of photoresists and ion-implanted photoresists from
substrates including same, and methods of using such compositions
for removal of photoresists and ion-implanted photoresists from
semiconductor substrates.
[0014] In one aspect, the invention relates to a photoresist
cleaning composition, comprising SCCO2 and alcohol.
[0015] In another aspect, the invention relates to a photoresist
cleaning composition, comprising SCCO2 and alcohol, wherein the
alcohol is selected from the group consisting of C.sub.1-C.sub.4
alcohols (e.g., methanol, ethanol, propanol and butanol), wherein
the alcohol is present at a concentration of from about 5 to about
20 wt. %, based on the total weight of the cleaning composition,
and wherein SCCO2 is present at a concentration of from about 80 to
about 95 wt. %, based on the total weight of the cleaning
composition.
[0016] A further aspect of the invention relates to a photoresist
cleaning composition, comprising SCCO2, alcohol and a fluorine ion
source, wherein the alcohol is selected from the group consisting
of C.sub.1-C.sub.4 alcohols, wherein the fluorine ion source is
present at a concentration of from about 0.01 to about 2 wt. %,
based on the total weight of the composition, wherein the alcohol
is present at a concentration of from about 5 to about 20 wt. %,
based on the total weight of the cleaning composition, and wherein
SCCO2 is present at a concentration of from about 79 to about 94.99
wt. %, based on the total weight of the cleaning composition.
[0017] A still further aspect of the invention relates to a method
of removing photoresist from a substrate having same thereon, said
method comprising contacting the photoresist with a cleaning
composition comprising SCCO2 and alcohol, for sufficient time and
under sufficient contacting conditions to remove the photoresist
from the substrate.
[0018] Yet another aspect of the invention relates to a method of
removing photoresist from a substrate having same thereon, said
method comprising contacting the photoresist with a cleaning
composition comprising SCCO2 and alcohol, to remove the photoresist
from the substrate, wherein the alcohol is selected from the group
consisting of C.sub.1-C.sub.4 alcohols, and the alcohol is present
at a concentration of from about 5 to about 20 wt. %, based on the
total weight of the composition, and said contacting is carried out
under conditions including pressure in a range of from about 1000
to about 7500 psi, temperature in a range of from about 35.degree.
C. to about 100.degree. C., for sufficient time to remove the
photoresist from the substrate.
[0019] In another aspect, the invention relates to a method of
removing ion implanted photoresist from a substrate having same
thereon, said method comprising contacting the photoresist with a
cleaning composition comprising SCCO2, alcohol and a fluorine ion
source, for sufficient time and under sufficient contacting
conditions to remove the ion implanted photoresist from the
substrate.
[0020] A further aspect of the invention relates to a method of
removing ion implanted photoresist from a substrate having same
thereon, said method comprising contacting the ion implanted
photoresist with a cleaning composition comprising SCCO2, alcohol
and fluorine ion source, to remove the ion implanted photoresist
from the substrate, wherein the alcohol is selected from the group
consisting of C.sub.1-C.sub.4 alcohols, the alcohol is present at a
concentration of from about 5 to about 20 wt. %, based on the total
weight of the composition, said fluorine ion source is present at a
concentration of from about 0.01 to about 2 wt. %, based on the
total weight of the composition, and said contacting is carried out
under conditions including pressure in a range of from about 1000
to about 7500 psi, temperature in a range of from about 35.degree.
C. to about 100.degree. C., for sufficient time to remove the
photoresist from the substrate.
[0021] Other aspects, features and embodiments of the invention
will be more fully apparent from the ensuing disclosure and
appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
[0022] FIG. 1 is a scanning electron microscope (SEM) image at 50K
magnification of a photoresist-bearing control wafer.
[0023] FIG. 2 is a scanning electron microscope (SEM) image at 50K
magnification of a corresponding post-cleaned sample, which was
cleaned of photoresist by contact of the photoresist-bearing
substrate with a cleaning composition containing SCCO2/methanol, at
35.degree. C. (the image exhibits a weak line pattern due to
over-etch of the metal surface prior to SCCO2 cleaning).
[0024] FIG. 3 is optical microscope image at 60K magnification of
an ion-implanted photoresist-bearing control wafer.
[0025] FIG. 4 is a corresponding scanning electron microscope (SEM)
image of the ion-implanted photoresist-bearing control wafer of
FIG. 3, after cleaning for 15 minutes with an
SCCO2/methanol/NH.sub.4F solution at 55.degree. C. and 4000 psi
pressure.
DETAILED DESCRIPTION OF THE INVENTION, AND PREFERRED EMBODIMENTS
THEREOF
[0026] The present invention is based on the discovery of a
supercritical carbon dioxide-based cleaning composition that is
highly efficacious for the removal of photoresists, including
photoresists per se as well as ion-implanted photoresists, from
semiconductor substrates on which same are present.
[0027] Supercritical carbon dioxide (SCCO2) might at first glance
be regarded as an attractive reagent for removal of photoresists,
since supercritical CO.sub.2 has the characteristics of both a
liquid and a gas. Like a gas, it diffuses rapidly, has low
viscosity, near-zero surface tension, and penetrates easily into
deep trenches and vias. Like a liquid, it has bulk flow capability
as a "wash" medium.
[0028] Despite these ostensible advantages, however, supercritical
CO.sub.2 is non-polar. Accordingly, it will not solubilize many
polar species, including inorganic salts and polar organic
compounds that are present in the photoresists and that must be
removed from the semiconductor substrate for efficient cleaning.
The non-polar character of SCCO2 thus has been an impediment to the
use of such reagent for photoresist removal subsequent to
deposition of photoresist on the substrate.
[0029] Such deficiency of supercritical CO.sub.2 has been overcome
by the present invention in the provision of a SCCO2-based
composition that is highly effective for cleaning of photoresists
and ion-implanted photoresists, and achieves damage-free,
residue-free cleaning of the substrate, e.g., a patterned wafer,
initially having such photoresist thereon.
[0030] More specifically, the present invention provides a
photoresist cleaning composition including SCCO2 and alcohol. The
SCCO2 and alcohol form a co-solvent composition that is highly
effective for photoresist removal.
[0031] In instances where the photoresist has been hardened by ion
implantation, the present invention provides a cleaning composition
including SCCO2, alcohol and a fluoride ion source compound, which
is highly effective for the removal of the ion implant hardened
photoresist.
[0032] The alcohol used in the SCCO2/alcohol cleaning compositions
of the invention may be of any suitable type. In one embodiment of
the invention, such alcohol comprises a C.sub.1-C.sub.4 alcohol
(e.g., methanol, ethanol, isopropanol, or butanol), or a mixture of
two or more of such alcohol species.
[0033] In a preferred embodiment, the alcohol is methanol, ethanol
or isopropanol. The presence of the alcoholic co-solvent with the
SCCO2 serves to increase the solubility of the composition for
photoresist material, including inorganic salts and polar organic
compounds present therein, in a manner providing a striking
improvement in removal ability of the composition for photoresists,
relative to SCCO2 alone.
[0034] In general, the specific proportions and amounts of SCCO2
and alcohol in relation to each other may be suitably varied to
provide the desired solubilizing (solvating) action of the
SCCO2/alcohol solution for the specific photoresist material,
including inorganic salts and polar organic compounds therein, to
be cleaned from the substrate. Such specific proportions and
amounts are readily determinable by simple experiment within the
skill of the art without undue effort.
[0035] In one embodiment, the SCCO2 and alcohol are formulated so
that the resulting solution contains from about 5 to about 20 wt. %
of alcohol.
[0036] The removal efficiency of the SCCO2 and alcohol composition
may be enhanced by use of elevated temperature conditions in the
contacting of the composition containing the photoresist to be
removed.
[0037] By way of specific example, FIG. 1 is a scanning electron
microscope (SEM) image at 50K magnification of a
photoresist-bearing control wafer. FIG. 2 is a scanning electron
microscope (SEM) image at 50K magnification of a corresponding
post-cleaned sample, which was cleaned of photoresist by contact of
the photoresist-bearing substrate with a cleaning composition of
SCCO2/methanol, at 35.degree. C. As observed in FIG. 2, the
photoresist was completely removed under these conditions.
[0038] Similar results in the complete removal of photoresist were
achieved using a corresponding cleaning composition of
SCCO2/methanol, at 70.degree. C. A corresponding cleaning
composition of SCCO2/isopropanol produced complete removal of the
photoresist at 45.degree. C. and 70.degree. C., but only partial
removal was effected with the composition of SCCO2/isopropanol at
35.degree. C., indicating that solvating and removal capability of
the SCCO2/alcohol composition can be enhanced by increasing the
temperature of the contacting step in which the SCCO2/alcohol
composition is contacted with the photoresist on the substrate to
be cleaned.
[0039] The effect of specific temperature increases and temperature
ranges, on the nature and extent of the removal of a specific
photoresist in the practice of the invention, may be readily
empirically determined, by varying the temperature to specific
values and measuring the amount of photoresist material removed
from the substrate by the SCCO2/alcohol composition at that
temperature. In such manner, optimal temperature levels may be
determined for a specific SCCO2/alcohol composition of the
invention, for the specific photoresist material to be removed.
[0040] In like manner, the process conditions other than
temperature may be selected and optimal or otherwise advantageous
conditions determined within the skill of the art, including the
superatmospheric pressure at which the supercritical fluid
composition is contacted with the photoresist to be removed from
the substrate, the flow and/or static character of the cleaning
composition contacting, and the duration of the contacting.
[0041] The SCCO2/alcohol compositions of the invention may
optionally be formulated with additional components to further
enhance the removal capability of the composition, or to otherwise
improve the character of the composition. Accordingly, the
composition may be formulated with stabilizers, chelating agents,
oxidation inhibitors, complexing agents, surfactants, etc.
[0042] In a specific embodiment, oxidation inhibitor may be
incorporated in the SCCO2/alcohol compositions, such as for example
boric acid, malonic acid, etc.
[0043] In one embodiment that is particularly suitable for complete
removal of photoresist on patterned aluminum wafers, the cleaning
composition comprises SCCO2 and alcohol, e.g., methanol, ethanol or
isopropanol, wherein the alcohol is present in an amount of from
about 5 to about 20 wt. %, based on the total weight of the
composition (SCCO2 and alcohol). This composition has been
demonstrated to successfully remove 100% of non-implanted
photoresist on aluminum while completely maintaining the structural
integrity of the underlying aluminum layer.
[0044] In such application of contacting the photoresist on the
substrate with the cleaning composition comprising SCCO2 and
alcohol, the cleaning composition is advantageously contacted with
the photoresist at a temperature in a range of from about
35.degree. C. to about 100.degree. C., at a pressure in a range of
from about 1000 to about 7500 psi, for a contacting duration in a
range of from about 1 to about 30 minutes, to effectively dissolve
and carry away photoresist without damaging the underlying aluminum
structure.
[0045] When the photoresist on the substrate has been hardened by
ion implantation, the ion implanted photoresist is advantageously
removed from the substrate by a cleaning composition including
SCCO2, alcohol and a fluoride ion source compound.
[0046] The SCCO2 and the alcohol may be formulated for such purpose
as previously described in respect of cleaning compositions for
non-ion implanted photoresists, with the additional fluoride ion
source compound being added to the solution in an effective
concentration, as readily determinable within the skill of the art,
by the simple expedient of contacting the ion implant hardened
photoresist with cleaning compositions of varying concentrations of
the fluoride ion source compound, and determining the corresponding
respective removal levels for the photoresist.
[0047] The fluoride ion source compound may be of any suitable type
that is effective in the supercritical fluid composition under
contacting conditions (with the ion implanted photoresist), to
generate fluorine ions that enhance the removal capability of the
cleaning composition, e.g., by reacting and complexing with the
implanted cations such as boron, phosphorous and arsenic, to form
SCCO2-soluble species that subsequently aid in the dissolution of
the photoresist.
[0048] A particularly preferred fluorine ion source is ammonium
fluoride, NH.sub.4F, although any other suitable fluorine ion
source material may be usefully employed. The fluoro
species-enhanced SCCO2/alcohol composition may contain more than
one fluorine ion source component. The fluorine source may be of
any suitable type, e.g., a fluorine-containing compound or other
fluoro species. Illustrative fluorine source components include
hydrogen fluoride (HF), triethylamine trihdyrogen fluoride or other
amine trihydrogen fluoride compound of the formula
NR.sub.3(HF).sub.3 wherein each R is independently selected from
hydrogen and lower alkyl (C.sub.1-C.sub.8 alkyl), hydrogen
fluoride-pyridine (pyr-HF), ammonium fluorides of the formula
R.sub.4NF, wherein each R is independently selected from hydrogen
and lower alkyl (C.sub.1-C.sub.8 alkyl), other quaternary
fluorides, xenon difluoride, fluoromethane, etc. etc.
[0049] In one embodiment of the invention, wherein ammonium
fluoride (NH.sub.4F) is employed as the fluorine ion source
component, such component is utilized at a concentration in a range
of from about 0.01 wt. % to about 5 wt. %, and more preferably in a
range of from about 0.1 wt. % to about 1 wt. %, based on the total
weight of the cleaning composition (i.e., SCCO2, alcohol and
fluorine ion source).
[0050] By way of further specific example, FIG. 3 is an optical
microscope image at 60K magnification of an ion-implanted
photoresist-bearing control wafer. FIG. 4 is a corresponding
scanning electron microscope (SEM) image of the ion-implanted
photoresist-bearing control wafer of FIG. 3, after cleaning for 15
minutes with an SCCO2/methanol/NH.sub.4F solution at 55.degree. C.
and 4000 psi pressure. As observed in FIG. 4, the photoresist was
completely removed under these conditions by the
SCCO2/methanol/NH.sub.4F solution.
[0051] In a preferred composition of such character, as
particularly adapted to cleaning of ion implanted photoresist from
silicon and/or SiO.sub.2 substrates, ammonium fluoride is present
at a concentration of from about 0.1 to about 1.0 wt. %, alcohol is
present at a concentration of from about 5 to about 20 wt. %, and
SCCO2 is present at a concentration of from about 79 to about 94.9
wt. %, based on the total weight of the cleaning composition
(SCCO2, alcohol and NH.sub.4F).
[0052] Such cleaning composition may be contacted with the ion
implanted photoresist under any suitable process conditions. In a
particularly preferred embodiment, such cleaning composition is
contacted with the ion implanted photoresist at a temperature in a
range of from about 45.degree. C. to about 75.degree. C., at a
pressure in a range of from about 2000 to about 4500 psi, for a
contacting duration in a range of from about 5 to about 15 minutes,
to effectively dissolve and carry away photoresist without damaging
the underlying silicon/silicon dioxide structure. The contacting
preferably is conducted in a dynamic contacting mode, involving
continuous flow of the cleaning composition over the
photoresist-bearing surface, to maximize the mass transfer gradient
and effect complete removal of the photoresist from the
substrate.
[0053] Cleaning processes of the invention may alternatively be
carried out in a static soak mode, wherein the photoresist is
contacted with a static volume of the cleaning composition and
maintained in contact therewith for a continued (soaking) period of
time, or as a still further alternative, the contacting of the
cleaning composition with the photoresist may be carried out in
sequential processing steps including dynamic flow of the cleaning
composition over the substrate having the photoresist thereon,
followed by a static soak of the substrate in the cleaning
composition, with the respective dynamic flow and static soak steps
being carried out alternatingly and repetitively, in a cycle of
such successive steps.
[0054] The cleaning compositions of the present invention are
readily formulated by simple mixing of ingredients, e.g., in a
mixing vessel under gentle agitation.
[0055] Once formulated, such cleaning compositions are applied to
the substrate for contacting with the residue thereon, at suitable
elevated pressures, e.g., in a pressurized contacting chamber to
which the cleaning composition is supplied at suitable volumetric
rate and amount to effect the desired contacting operation for
removal of the photoresist.
[0056] It will be appreciated that specific contacting conditions
for the cleaning compositions of the invention are readily
determinable within the skill of the art, based on the disclosure
herein, and that the specific proportions of ingredients and
concentrations of ingredients in the cleaning compositions of the
invention may be widely varied while achieving desired removal of
the photoresist from the substrate.
[0057] Accordingly, while the invention has been described herein
in reference to specific aspects, features and illustrative
embodiments of the invention, it will be appreciated that the
utility of the invention is not thus limited, but rather extends to
and encompasses numerous other aspects, features and embodiments.
Accordingly, the claims hereafter set forth are intended to be
correspondingly broadly construed, as including all such aspects,
features and embodiments, within their spirit and scope.
* * * * *