U.S. patent application number 11/208964 was filed with the patent office on 2006-02-09 for semiconductor substrate processing chamber and substrate transfer chamber interfacial structure.
This patent application is currently assigned to Micron Technology, Inc.. Invention is credited to Philip H. Campbell, Raynald B. Cantin, Craig M. Carpenter, Ross S. Dando, Kevin T. Hamer, Allen P. Mardian, Randy W. Mercil, Kimberly R. Tschepen.
Application Number | 20060027326 11/208964 |
Document ID | / |
Family ID | 27753129 |
Filed Date | 2006-02-09 |
United States Patent
Application |
20060027326 |
Kind Code |
A1 |
Carpenter; Craig M. ; et
al. |
February 9, 2006 |
Semiconductor substrate processing chamber and substrate transfer
chamber interfacial structure
Abstract
A semiconductor substrate processor includes a substrate
transfer chamber and a plurality of substrate processing chambers
connected therewith. An interfacial structure is received between
at least one of the processing chambers and the transfer chamber.
The interfacial structure includes a substantially non-metallic,
thermally insulative mass of material interposed between the one
processing chamber and the transfer chamber. The mass is of
sufficient volume to effectively reduce heat transfer from the
processing chamber to the transfer chamber than would otherwise
occur in the absence of said mass of material. An interfacial
structure includes a body having a substrate passageway extending
therethrough. The passageway includes walls at least a portion of
which are substantially metallic. The body includes material
peripheral of the walls which is substantially non-metallic and
thermally insulative. The substantially non-metallic material has
mounting openings extending at least partially therein.
Inventors: |
Carpenter; Craig M.; (Boise,
ID) ; Dando; Ross S.; (Nampa, ID) ; Mardian;
Allen P.; (Boise, ID) ; Hamer; Kevin T.;
(Meridian, ID) ; Cantin; Raynald B.; (Boise,
ID) ; Campbell; Philip H.; (Meridian, ID) ;
Tschepen; Kimberly R.; (Corvallis, OR) ; Mercil;
Randy W.; (Boise, ID) |
Correspondence
Address: |
WELLS ST. JOHN P.S.
601 W. FIRST AVENUE, SUITE 1300
SPOKANE
WA
99201
US
|
Assignee: |
Micron Technology, Inc.
|
Family ID: |
27753129 |
Appl. No.: |
11/208964 |
Filed: |
August 22, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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10695727 |
Oct 28, 2003 |
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|
11208964 |
Aug 22, 2005 |
|
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10082599 |
Feb 22, 2002 |
6800172 |
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10695727 |
Oct 28, 2003 |
|
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Current U.S.
Class: |
156/345.31 |
Current CPC
Class: |
C23C 16/4409 20130101;
Y10S 414/139 20130101; C23C 16/54 20130101; H01L 21/67126
20130101 |
Class at
Publication: |
156/345.31 |
International
Class: |
C23F 1/00 20060101
C23F001/00 |
Claims
1-109. (canceled)
110. A semiconductor substrate processing chamber and substrate
transfer chamber interfacial structure, comprising: a body sized
and shaped to engage with and between a semiconductor substrate
processing chamber and a substrate transfer chamber, the body
comprising a mass of substantially non-metallic and thermally
insulative material; the body comprising a substrate passageway
extending through the thermally insulative material; the body
comprising a plurality of openings spaced from the passageway and
which extend through the thermally insulative material; and load
bearing plugs received within at least some of the openings in the
thermally insulative material, the load bearing plugs having
greater compression strength than the thermally insulative
material, at least some of the load bearing plugs having outer
longitudinal surfaces which are not threaded.
111. The interfacial structure of claim 110 wherein said load
bearing plugs having outer longitudinal surfaces which are not
threaded comprise a longitudinal passageway received
therethrough.
112. The interfacial structure of claim 110 wherein the body is
substantially rectangular having outermost corners, at least four
of said openings and load bearing plugs being respectively received
proximate the outermost corners.
113. The interfacial structure of claim 110 wherein the body
comprises a substantially metallic insert received within the
passageway, the insert defining an insert substrate passageway
therethrough.
114. A semiconductor substrate processor comprising a semiconductor
substrate transfer chamber and a plurality of semiconductor
substrate processing chambers connected therewith, an interfacial
structure of claim 110 being received between said transfer chamber
and at least one of said processing chambers.
115. A semiconductor substrate processing chamber and substrate
transfer chamber interfacial structure, comprising: a body sized
and shaped to engage with and between a semiconductor substrate
processing chamber and a substrate transfer chamber, the body
comprising a mass of substantially non-metallic and thermally
insulative material; the body comprising a substrate passageway
extending through the thermally insulative material; the body
comprising a plurality of openings spaced from the passageway and
which extend through the thermally insulative material; and load
bearing plugs received within at least some of the openings in the
thermally insulative material, the load bearing plugs having
greater compression strength than the thermally insulative
material, at least some of the load bearing plugs having some outer
longitudinal surface portion which is straight linear along a
length of said load bearing plugs.
116. The interfacial structure of claim 115 wherein said load
bearing plugs having some outer longitudinal surface portion which
is straight linear along a length of said load bearing plugs
comprise a longitudinal passageway received therethrough.
117. The interfacial structure of claim 115 wherein the body is
substantially rectangular having outermost corners, at least four
of said openings and load bearing plugs being respectively received
proximate the outermost corners.
118. The interfacial structure of claim 115 wherein the body
comprises a substantially metallic insert received within the
passageway, the insert defining an insert substrate passageway
therethrough.
119. A semiconductor substrate processor comprising a semiconductor
substrate transfer chamber and a plurality of semiconductor
substrate processing chambers connected therewith, an interfacial
structure of claim 115 being received between said transfer chamber
and at least one of said processing chambers.
120. A semiconductor substrate processing chamber and substrate
transfer chamber interfacial structure, comprising: a body sized
and shaped to engage with and between a semiconductor substrate
processing chamber and a substrate transfer chamber, the body
comprising a mass of substantially non-metallic and thermally
insulative material; the body comprising a substrate passageway
extending through the thermally insulative material; the body
comprising a plurality of openings spaced from the passageway and
which extend through the thermally insulative material; and load
bearing plugs received within at least some of the openings in the
thermally insulative material, the load bearing plugs having
greater compression strength than the thermally insulative
material, at least some of the load bearing plugs having at least
one radial projection, the body comprising interlocking openings
sized to receive said radial projections effective to preclude
rotation of said load bearing plugs having the radial
projection.
121. The interfacial structure of claim 120 wherein said load
bearing plugs having the radial projection comprise a longitudinal
passageway received therethrough.
122. The interfacial structure of claim 120 wherein the body is
substantially rectangular having outermost corners, at least four
of said openings and load bearing plugs being respectively received
proximate the outermost corners.
123. The interfacial structure of claim 120 wherein the body
comprises a substantially metallic insert received within the
passageway, the insert defining an insert substrate passageway
therethrough.
124. A semiconductor substrate processor comprising a semiconductor
substrate transfer chamber and a plurality of semiconductor
substrate processing chambers connected therewith, an interfacial
structure of claim 120 being received between said transfer chamber
and at least one of said processing chambers.
Description
RELATED PATENT DATA
[0001] This patent resulted from a continuation application of U.S.
patent application Ser. No. 10/695,727, filed Oct. 28, 2003,
entitled "Semiconductor Substrate Processing Chamber and Accessory
Attachment Interfacial Structure", naming Craig M. Carpenter, Ross
S. Dando, Allen P. Mardian, Kevin T. Hamer, Raynald B. Cantin,
Philip H. Campbell, Kimberly R. Tschepen and Randy W. Mercil as
inventors, the disclosure of which is incorporated by reference;
which patent resulted from a divisional application of U.S. patent
application Ser. No. 10/082,599, filed Feb. 23, 2002, entitled
"Interfacial Structure for Semiconductor Substrate Processing
Chambers and Substrate Transfer Chambers and for Semiconductor
Substrate Processing Chambers and Accessory Attachments, and
Semiconductor Substrate Processor", naming Craig M. Carpenter, Ross
S. Dando, Allen P. Mardian, Kevin T. Hamer, Raynald B. Cantin,
Philip H. Campbell, Kimberly R. Tschepen and Randy W. Mercil as
inventors, now U.S. Pat. No. 6,800,172 B2, the disclosure of which
is incorporated by reference.
TECHNICAL FIELD
[0002] This invention relates to interfacial structures for receipt
between semiconductor substrate processing chambers and substrate
transfer chambers and between semiconductor substrate processing
chambers and accessory attachments, and to semiconductor substrate
processors.
BACKGROUND OF THE INVENTION
[0003] Integrated circuitry fabrication typically involves using
processing equipment having chambers which are sealed from the
environment for control of the atmosphere within which substrates
are processed. Some wafer processors, particularly deposition
processors, utilize a substrate transfer chamber which is connected
with a plurality of separate substrate processing chambers.
Substrates are subjected to separate processings within individual
chambers, with the substrates being moved to and from the
individual processing chambers and the transfer chamber by robotic
arms.
[0004] By way of example only, one existing semiconductor substrate
family of processors includes the Applied Materials Centura
Chemical Vapor Deposition Processors. Such processors employ a
central substrate transfer chamber having a plurality of processing
chambers peripherally mounted thereto. The processing chambers
individually mount to the transfer chamber by metallic interface
blocks or structures. Such structures include an elongated slot or
passageway through which individual semiconductor substrates can be
moved into and out of the respective processing chambers relative
to the transfer chamber. The processings within the various
chambers are typically conducted at subatmospheric pressure. The
transfer chamber is typically maintained at a slightly higher
subatmospheric pressure than that of the process chambers to
restrict material injected into the processing chambers from
entering the transfer chamber.
[0005] Further, an additional method of facilitating such is to
form a gas curtain across the elongated slot/passageway within the
interface block. Such is provided in the Centura processors by
utilizing a single gas emission opening at one side of the
passageway and which is fed by a single inert gas feeding conduit.
During processing, an inert gas is emitted from the single conduit
intending to flow completely across the passageway and thereby
provide an effective curtain/shield to any substantial flow of
processing gasses within the chamber through the passageway into
the transfer chamber. Further, with the processing chamber being at
a lower pressure than the transfer chamber, a substantial majority
of the inert curtain gas is typically drawn into the processing
chamber. Such is emitted therefrom through a vacuum line and pump
associated with the respective processing chamber.
[0006] Individual processing chambers have typically, in the past,
been provided at or subjected to temperatures which usually do not
exceed 80.degree. C. The transfer chamber is typically not provided
with a separate heat source intended to maintain the temperature
thereof or therein at some controlled temperature. Yet, some
existing and future generation processes (for example chemical
vapor deposition including atomic layer deposition) are resulting
in elevated processor chamber body temperatures well in excess of
80uture generation processes (for example chemical vapor deposition
including atomic layer deposition) are resulting in elevated
processor chamber body temperatures well in excess of 80.degree. C.
This can result in adduct and other process residue accumulations
within the processing chambers. Further, and particularly with
higher chamber body temperatures, cold spots may develop within the
processing chamber, and particularly proximate the transfer
chamber.
[0007] The invention was motivated in addressing issues such as
those identified above, but is in no way so limited. The invention
is only limited by the accompanying claims as literally worded
without limiting or interpretative reference to the specification
or drawings, and in accordance with the doctrine of
equivalents.
SUMMARY
[0008] The invention includes interfacial structures for
semiconductor substrate processing chambers and substrate transfer
chambers, and semiconductor substrate processors. In but one
implementation, a semiconductor substrate processing chamber and
substrate transfer chamber interfacial structure includes a body
sized and shaped to engage with and between a semiconductor
substrate processing chamber and a substrate transfer chamber. The
body includes a substrate passageway extending therethrough. The
passageway includes walls at least a portion of which are
substantially metallic. The body includes material peripheral of
the walls which is substantially non-metallic and thermally
insulative. The substantially non-metallic material has mounting
openings extending at least partially therein. Other aspects and
implementations of an interfacial structure for semiconductor
substrate processing chambers and substrate transfer chambers are
contemplated.
[0009] In one implementation, a semiconductor substrate processor
includes a substrate transfer chamber and a plurality of substrate
processing chambers connected therewith. An interfacial structure
is received between at least one of the processing chambers and the
transfer chamber. The interfacial structure includes a
substantially non-metallic, thermally insulative mass of material
interposed between the one processing chamber and the transfer
chamber. The mass is of sufficient volume to effectively reduce
heat transfer from the processing chamber to the transfer chamber
than would otherwise occur in the absence of said mass of
material.
[0010] In one implementation, a semiconductor substrate processing
chamber and accessory attachment interfacial structure includes a
body sized and shaped to engage with and between a semiconductor
substrate processing chamber and an accessory attachment which is
exposed to the processing chamber, with the body having first and
second faces. The body includes an external perimeter extending
between the first and second faces. The body includes a volume in
at least one cross sectional region transverse the passageway which
extends to diametrically opposing portions of the perimeter. At
least a majority of said cross sectional region constitutes a mass
of substantially non-metallic and thermally insulative material.
The mass of material is sufficient to effectively reduce heat
transfer between the semiconductor processing chamber and the
accessory attachment when so engaged than would otherwise occur in
the absence of said mass of material when so engaged.
[0011] Other implementations and aspects are contemplated.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] Preferred embodiments of the invention are described below
with reference to the following accompanying drawings.
[0013] FIG. 1 is a diagrammatic top view of a semiconductor
substrate processor in accordance with an aspect of the
invention.
[0014] FIG. 2 is a first perspective view of an interfacial
structure for receipt between a semiconductor substrate processing
chamber and a substrate transfer chamber in accordance with an
aspect of the invention.
[0015] FIG. 3 is a second, reverse side, perspective view of the
interfacial structure of FIG. 2.
[0016] FIG. 4 is an enlarged sectional view taken through line 4-4
in FIG. 3.
[0017] FIG. 5 is an exploded view of the interfacial structure as
appearing in FIG. 3.
[0018] FIG. 6 is an enlarged sectional view taken horizontally
through the center of a connected component 40 of the above
interfacial structure, as referred to below.
[0019] FIG. 7 is a further enlarged sectional view taken vertically
through the center of the connected component 40 of FIG. 6.
[0020] FIG. 8 is a perspective view of a load bearing plug of the
above interfacial structure.
[0021] FIG. 9 is a perspective view of another load bearing plug of
the above interfacial structure.
[0022] FIG. 10 is a perspective view of a removed/unassembled
portion of the above interfacial structure.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0023] This disclosure of the invention is submitted in furtherance
of the constitutional purposes of the U.S. Patent Laws "to promote
the progress of science and useful arts" (Article 1, Section
8).
[0024] Referring to FIG. 1, a semiconductor substrate processor is
indicated generally with reference 10. In the context of this
document, the term "semiconductor substrate" or "semiconductive
substrate" is defined to mean any construction comprising
semiconductive material, including, bot not limited to, bulk
semiconductive materials such as a semiconductive wafer (either
alone or in assemblies comprising other materials thereon), and
semiconductive material layers (either alone or in assemblies
comprising other materials). The term "substrate" refers to any
supporting structure, including, but not limited to, the
semiconductive substrates described above. Processor 10 comprises a
substrate transfer chamber 12 and a plurality of substrate
processing chambers 14 connected therewith. Any existing or
yet-to-be developed transfer and processing chambers are
contemplated. An interfacial structure 15 is received between at
least one of the processing chambers 14 and the transfer chamber
12. In one embodiment, interfacial structure 15 of a processor 10
comprises a substantially non-metallic, thermally insulative mass
of material interposed between the one processing chamber and the
transfer chamber, with the mass being of sufficient volume to
effectively reduce heat transfer from the processing chamber to the
transfer chamber than would otherwise occur in the absence of such
mass of material.
[0025] But one preferred embodiment interfacial structure is shown
in various attributes in FIGS. 2-10. The invention also
contemplates the interfacial structure for a semiconductor
substrate processing chamber and substrate transfer chamber in
various subcombinations as literally worded in the accompanying
claims and as interpreted in accordance with the doctrine of
equivalents. Referring initially to FIGS. 2-5, interfacial
structure 15 comprises a body 16 sized and shaped to engage with
and between a semiconductor substrate processing chamber and a
substrate transfer chamber. Body 16 comprises a mass 18 of
substantially non-metallic and thermally insulative material. In
the context of this document, "substantially non-metallic" defines
a material having less than 50% by volume metal therein, with
"metal" in such definition referring to that in elemental or alloy
form. Also in the context of this document, "substantially
metallic" defines a material having at least 50% by volume metal as
just defined. Further in the context of this document, "thermally
insulative material" defines a substance having a thermal
conductivity of less than or equal to 0.02 W/cm-K. The invention
was reduced-to-practice in forming mass 18 to comprise Delrin 111P
sold by DuPont Engineering Polymers of Newark, Del. Such a material
is understood to be polymeric. Aspects of the invention also
contemplate substantially non-metallic and thermally insulative
materials such as gels, ceramics, porous materials (i.e., foams),
glass and others, by way of examples only. Of course, such
materials might be combined or employ other materials therein, as
long as such are substantially non-metallic and thermally
insulative as defined herein where such language is specifically
literally used in a concluding claim. Further by way of example
only, such materials might include combinations of, a) solid and
liquid, b) solid and gas, c) liquid and gas, and d) solid, liquid
and gas. Further by way of example only, such material may or may
not be homogenous.
[0026] Mass 18 includes first and second faces 20 and 22. In the
depicted and preferred embodiment, face 22 is adapted for
contacting engagement with a processing chamber 14, while face 20
is adapted for contacting engagement with transfer chamber 12. Of
course, additional intervening structure(s)/material(s) might be
provided such that one or both of faces 20 and 22 do not contact
either transfer chamber 12 or processing chamber 14. Faces 20 and
22 in the preferred embodiment as shown are also preferably
opposing and generally planar. Face 20 includes a recess 24 formed
therein (FIG. 5). An exemplary depth or thickness of mass 18 is
1.25 inches, with an exemplary depth of recess 24 being 0.0125
inch. Mass 18 has a substrate passageway 26 extending through the
thermally insulative material from first face 20 to second face 22.
Slotted openings 27 are opposingly provided to passageway 20 from
opposing sides/ends thereof for receiving or at least partially
defining gas feed conduits as will be described below.
[0027] A plurality of openings 28, 29 and 30 are provided within
mass 18 spaced from passageway 26 and extending through the
thermally insulative material. Openings 29 and 30 comprise mounting
openings adapted for receiving either alignment pins, bolts, or
other mounting structures. Such might be used to mount relative to
flanges associated with one or both of a processing chamber and a
transfer chamber. In the depicted and preferred embodiment,
openings 28 and 29 are configures for receiving load bearing plugs
32, 34a/34b, respectively. Load bearing plugs 32 and 34a/34b
ideally have greater inherent compression strength than does the
thermally insulative material of mass 18. An exemplary material is
stainless steel. Typically, processing chambers 14 are tightly,
compressively mounted to transfer chamber 12 using mounting bolts
received through at least some of openings 30 and which may
otherwise compressively deform the material of mass 18 in the
absence of load bearing plugs 32 and/or 34a/34b. In the depicted
preferred embodiment, mass 18 is substantially rectangular having
outmost corners. The depicted four openings 28 and load bearing
plugs 32 are received therein proximate such outermost corners.
[0028] Load bearing plugs 32 are depicted as being entirely solid,
while load bearing plugs 34a/34b have a hollow portion in the form
of an alignment pin/bolt passageway 36 received therethrough.
(FIGS. 5, 8 and 9). Load bearing plugs 34a/34b advantageously
include respective radial projections 38 to prevent the rotation
thereof upon the receipt and mounting of alignment pin/bolts
therethrough. Accordingly in the depicted and preferred embodiment,
at least some of the load bearing plugs are entirely solid (i.e.,
plugs 32) and at least some of the load bearing plugs include a
hollow portion (i.e., plugs 34a/34b).
[0029] Referring more specifically to FIG. 407, body 16 comprises
substantially metallic insert 40 received within thermally
insulative material substrate passageway 26. The depicted preferred
embodiment insert 40 comprises two pieces 42 and 44 which are
welded together. Piece 42 includes opposing gas conduits 46, with
piece 44 comprising a circumferential gas conduit 48 which is fed
by gas conduit 46. Exemplary material for pieces 42 and 44 is
stainless steel.
[0030] Insert 40 has internal walls 50 (FIGS. 4, 6 and 7) which
define an insert substrate passageway 55 (FIG. 4) through the
insert and, effectively, a body substrate passageway comprising
walls which define a passageway circumference. Further, at least a
portion of walls 50 are substantially metallic, with all of
passageway walls 50 being substantially metallic in the depicted
preferred embodiment. At least two wall openings 54 are received
within walls 50 and positioned to establish a gas curtain across
insert passageway 55 upon effective emission of gas from said wall
openings. Preferably, at least four such wall openings are
provided, and more preferably at least ten wall openings. The
depicted preferred embodiment shows sixteen openings 54 arranged as
eight multiple pairs of directly opposing wall openings 54 which
are positioned to establish a gas curtain across passageway 55 upon
effective emission of gas from such openings. At least one gas feed
conduit is provided in fluid communication with wall openings 54,
with two such gas feed conduits 60 (FIG. 5) being depicted for
engagement with conduits 46 formed in insert piece 42.
[0031] Body 16 comprises a metal plate 64 in physical connection
with substantially metallic insert 40 (FIGS. 3-5 and 10). In the
depicted preferred embodiment, metal plate 64 includes a substrate
passageway 66 formed therein, and a recess 68 of the same general
shaped thereabout in a face of metal plate 64. (FIG. 10). Piece 42
of substantially metallic insert 40 is received within recess 68
and welded thereto. Metal plate 64 is received within face recess
24 of mass 18 of the substantially non-metallic and thermally
insulative material (FIGS. 3-5).
[0032] The invention is embodied in various combinational aspects
as presented in the accompanying claims. By way of example only and
in but one aspect, an interfacial structure comprises a body having
a substrate passageway extending therethrough having walls at least
a portion of which are substantially metallic. By way of example
only, walls 50 are exemplary such walls. The body comprises
material peripheral of the walls (i.e., the material of mass 18)
which is substantially non-metallic and thermally insulative. Such
material comprises mounting openings (i.e., any of openings 30 and
29) which extend at least partially therein. In one preferred
aspect, the body, for example body 16, has a greater volume of
substantially non-metallic and thermally insulative material than
of substantially metallic material.
[0033] In one aspect, the body, for example body 16, comprises a
total volume at least a majority of which is a mass of material
which is substantially non-metallic and thermally insulative. A
sealant channel is received on the body peripheral of the substrate
passageway. In one preferred embodiment, the sealant channel
surrounds the passageway. In one preferred embodiment, the sealant
channel is in the form of an O-ring groove, and in one embodiment,
the sealant channel is received on the substantially metallic
insert. In the depicted preferred embodiment, piece 44 of
substantially metallic insert 40 depicts a sealant channel 72
peripherally surrounding passageway 55 (FIGS. 4, 6 and 7). An
o-ring, gasket or other sealing material would be received within
channel 72, and another O-ring/gasket/sealant received relative to
a channel formed in the transfer chamber flange for providing fluid
tight seals between the interface blocks and the processing chamber
and transfer chamber.
[0034] In one aspect, the body, for example boy 16, comprises at
least one face having a majority area which is substantially
metallic. In the depicted preferred embodiment, that would be the
face having exposed metal plate 64. In one aspect, the body, for
example body 16, comprises at least one face having a majority area
which is substantially non-metallic. In the depicted preferred
embodiment, that would be the face opposing metal plate 64 as
depicted, for example, in FIG. 2. In one aspect, the body comprises
at least one face configured for contacting a semiconductor
substrate processing chamber 14 (i.e., the face depicted in FIG. 2)
and another face configured for contacting a substrate transfer
chamber 12 (i.e., the face depicted in FIG. 3).
[0035] In one aspect, the body, for example body 16, can be
considered as comprising an external perimeter which extends
between first and second faces. The body comprises a volume in at
least one cross-sectional region transverse the passageway which
extends to diametrically opposing portions of the perimeter. At
least a majority of said cross-sectional region constitutes a
substantially non-metallic and thermally insulative material. Such
an exemplary cross-sectional cut of an exemplary cross-sectional
region is depicted in FIG. 4. The total depicted cross-sectional
area, or any suitable sub-portion thereof, depicts a representative
cross-sectional region. In one preferred embodiment, the
cross-sectional region is at least one inch deep, and in another
aspect preferably from one inch to two inches deep.
[0036] In one aspect of the invention, a semiconductor substrate
processor is contemplated. Such includes a substrate transfer
chamber and a plurality of substrate processing chambers connected
therewith. An interfacial structure is received between at least
one of the processing chambers and the transfer chamber. The
interfacial structure comprises a body sized and shaped to engage
with and between the semiconductor substrate processing chamber and
the substrate transfer chamber. The body comprises a substrate
passageway extending therethrough, and comprises walls which define
a passageway circumference. At least two wall openings are received
within the walls and are positioned to establish a gas curtain
across the passageway upon the effective emission of gas from such
wall openings. At least one gas feed conduit is in fluid
communication with the wall openings. In one preferred embodiment,
the body is substantially metallic. In another embodiment, the
interfacial structure has a greater volume of substantially
non-metallic and thermally insulative material than of
substantially metallic material, for example such as described
above with respect to body 16.
[0037] In one implementation, the invention includes an interfacial
structure to be received between a semiconductor substrate
processing chamber and accessory attachment. In the context of this
document, an "accessory attachment" is any component other than a
transfer chamber which attaches with a housing of processing
chamber and communicates within the chamber. By way of example
only, exemplary such devices include wafer lift assemblies, pumps,
valves, etc. In one aspect, a body is sized and shaped to engage
with and between a semiconductor substrate processing chamber and
an accessory attachment which is exposed to the processing chamber.
The body has a total volume. In one implementation, at least a
majority of the total volume is a mass of material which is
substantially non-metallic and thermally insulative. The mass of
material is sufficient to effectively reduce heat transfer between
the semiconductor processing chamber and the accessory attachment
when so engaged than would otherwise occur in the absence of said
mass of material when so engaged.
[0038] In one implementation, the body has first and second faces.
The body includes an external perimeter extending between the first
and second faces. The body comprises a volume in at least one cross
sectional region transverse the passageway which extends to
diametrically opposing portions of the perimeter. At least a
majority of said cross sectional region constitutes a mass of
substantially non-metallic and thermally insulative material. The
mass of material is sufficient to effectively reduce heat transfer
between the semiconductor processing chamber and the accessory
attachment when so engaged than would otherwise occur in the
absence of said mass of material when so engaged.
[0039] The interfacial structure to be received between a
semiconductor substrate processing chamber and accessory attachment
can include any of the materials or attributes described above with
respect the preferred embodiment interfacial structure to be
received between a semiconductor substrate processing chamber and
substrate transfer chamber.
[0040] In compliance with the statute, the invention has been
described in language more or less specific as to structural and
methodical features. It is to be understood, however, that the
invention is not limited to the specific features shown and
described, since the means herein disclosed comprise preferred
forms of putting the invention into effect. The invention is,
therefore, claimed in any of its forms or modifications within the
proper scope of the appended claims appropriately interpreted in
accordance with the doctrine of equivalents.
* * * * *