U.S. patent application number 11/198960 was filed with the patent office on 2005-12-08 for modified source/drain re-oxidation method and system.
Invention is credited to Benistant, Francis, Hurley, Kelly, Rudeck, Paul J..
Application Number | 20050272203 11/198960 |
Document ID | / |
Family ID | 25084656 |
Filed Date | 2005-12-08 |
United States Patent
Application |
20050272203 |
Kind Code |
A1 |
Rudeck, Paul J. ; et
al. |
December 8, 2005 |
Modified source/drain re-oxidation method and system
Abstract
Methods and devices are disclosed utilizing a phosphorous-doped
oxide layer that is added prior to re-oxidation. This allows
greater control of the re-oxidation process and greater control of
the performance characteristics of semiconductor devices such as
flash memory. For flash memory, greater control is gained over
programming rates, erase rates, data retention and self align
source resistance.
Inventors: |
Rudeck, Paul J.; (Boise,
ID) ; Benistant, Francis; (Boise, ID) ;
Hurley, Kelly; (Boise, ID) |
Correspondence
Address: |
DINSMORE & SHOHL LLP
One Dayton Centre
Suite 1300
One South Main Street
Dayton
OH
45402-2023
US
|
Family ID: |
25084656 |
Appl. No.: |
11/198960 |
Filed: |
August 8, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11198960 |
Aug 8, 2005 |
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10818564 |
Apr 6, 2004 |
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10818564 |
Apr 6, 2004 |
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10143450 |
May 10, 2002 |
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6756268 |
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10143450 |
May 10, 2002 |
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09769162 |
Jan 24, 2001 |
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Current U.S.
Class: |
438/253 ;
257/E21.427; 257/E21.682; 257/E27.103 |
Current CPC
Class: |
H01L 21/02129 20130101;
H01L 29/66825 20130101; H01L 29/6659 20130101; H01L 21/022
20130101; H01L 27/115 20130101; H01L 29/66659 20130101; H01L
21/0234 20130101; H01L 21/31625 20130101; H01L 27/11521
20130101 |
Class at
Publication: |
438/253 |
International
Class: |
H01L 021/8242 |
Claims
What is claimed is:
1. A method of memory cells comprising: defining a dimension of a
flash cell on a substrate utilizing photolithography and plasma
etching to provide steep walls in the substrate; fabricating a
drain in a drain region of the substrate by: blocking a source
region of the flash cell; implanting arsenic; and removing blocking
from the source region; fabricating a self aligned source in the
source region of the substrate by: blocking the drain region of the
flash cell; performing an oxide dry etch in order to remove
isolation oxide along the self aligned source region; implanting
phosphorous to dope the self aligned source; implanting arsenic to
dope the self aligned source; and removing blocking from the drain
region of the flash cell; selecting at least an erase rate by a
desired thickness and a desired phosphorous concentration of a
phosphorous doped oxide layer; using chemical vapor deposition to
provide the phosphorous doped oxide layer having the desired
thickness and the desired phosphorous concentration over and in
places, in contact with the substrate; performing a directional
plasma etch on the phosphorous doped oxide layer to form sidewalls
in contact with both the substrate and the steep walls; and
performing re-oxidation on the substrate to form a desired oxide
profile width in the self aligned source region adjacent the steep
walls which is less than a width of an oxide profile that can be
provided in the absence of the phosphorous doped oxide
sidewalls.
2. A method of fabricating memory cells comprising: doping a drain
region in a substrate with a first dopant; doping a source region
in the substrate with a second dopant; depositing a doped oxide
layer over the substrate according to a desired thickness and a
desired phosphorus concentration used to provide at least a desired
erasure rate; selectively removing horizontal portions of the doped
oxide layer while leaving steep portions along steep exposed
side-walls; and performing re-oxidization on the substrate to
provide a desired oxide profile width which is less than an oxide
profile width that can be provided in the absence of the doped
oxide layer.
3. The method of claim 2, wherein a thickness of the doped oxide
layer is in the range of 25 .ANG. to 500 .ANG..
4. The method of claim 2, wherein said phosphorous concentration is
in the range of about 1% to about 6%.
5. A method of fabricating memory cells comprising: providing a
substrate having a memory cell; doping one or more horizontal
surfaces of said memory cell to a first dopant concentration;
doping one or more vertical surfaces of said memory cell coupled to
said one or more horizontal surfaces to a second dopant
concentration, said second dopant concentration being lower than
said first dopant concentration; and forming one or more
phosphorous doped oxide sidewalls horizontally in contact with said
substrate and vertically in contact with said one or more vertical
surfaces of said memory cell, said one or more vertical phosphorous
doped oxide sidewalls having an additional dopant
concentration.
6. The method of claim 5, wherein said additional dopant
concentration and said second dopant concentration produce an
effective dopant concentration.
7. The method of claim 5, wherein said effective dopant
concentration is substantially equal to the first dopant
concentration.
8. The method of claim 5, wherein the additional dopant
concentration, the second dopant concentration, and the first
dopant concentration are selected to provide a desired
resistance.
9. The method of claim 5 further comprising subjecting said
substrate to re-oxidation.
10. The method of claim 5 further comprising etching said
substrate.
11. The method of claim 5, wherein said doping is prior to said
re-oxidation.
12. The method of claim 5, wherein said re-oxidation increases
doping in said one or more vertical surfaces from phosphorus
diffusing out of said one or more phosphorous doped oxide
sidewalls.
13. The method of claim 5, wherein said re-oxidation forms a
re-oxidation oxide layer over said one or more phosphorous doped
oxide sidewalls and said one or more horizontal surfaces.
14. The method of claim 5, wherein said re-oxidation is
accomplished by thermal re-oxidation.
15. The method of claim 5, wherein said sidewalls is formed by
providing a phosphorous doped oxide layer having a thickness in the
range of about 25 .ANG. to about 500 .ANG., and etching said
phosphorous doped oxide layer.
16. The method of claim 5, wherein said additional dopant
concentration is a phosphorous concentration from about 1% to about
6%.
17. A method of fabricating memory cells comprising: providing a
substrate; forming a self align source having one or more
horizontal surfaces substantially planar to the substrate with a
first dopant concentration, one or more vertical surfaces
substantially perpendicular and coupled to the one or more
horizontal surfaces with a second dopant concentration, said second
dopant concentration being lower than said first dopant
concentration, and a first one or more substantially vertical
phosphorous doped oxide layers formed over the one or more vertical
surfaces; forming a tunnel oxide layer over at least a portion of
the self aligned source; forming a floating gate layer over at
least a portion of said tunnel oxide layer; forming a dielectric
layer over at least a portion of said floating gate layer; forming
a wordline poly layer over at least a portion of said dielectric
layer; forming a fielding isolation oxide layer over at least a
portion of said wordline poly layer; patterning one or more of the
formed layers to from substantially vertical surfaces; and forming
a second one or more substantially vertical phosphorous doped oxide
layers vertically in contact with said substantially vertical
surfaces and horizontally in contact with said substrate, said
first and second one or more substantially vertical phosphorous
doped oxide layers having an additional dopant concentration.
18. The method of claim 17, wherein said substantially vertical
phosphorous doped oxide layers have a thickness in the range of
about 25 .ANG. to about 500 .ANG..
19. The method of claim 17, wherein said additional dopant
concentration is a phosphorous concentration from about 1% to about
6%.
20. The method of claim 17, wherein said additional dopant
concentration and said second dopant concentration produce an
effective dopant concentration.
21. The method of claim 17, wherein said effective dopant
concentration is substantially equal to the first dopant
concentration.
22. The method of claim 17, wherein the additional dopant
concentration, the second dopant concentration, and the first
dopant concentration are selected to provide a desired
resistance.
23. The method of claim 17 further comprising subjecting said
substrate to re-oxidation.
24. The method of claim 17 further comprising etching said
substrate.
25. The method of claim 17 further comprising utilizing shallow
trench isolation.
26. The method of claim 17, wherein the floating gate layer is a
lightly doped polysilicon layer.
27. The method of claim 17, wherein the dielectric layer is an
oxide-nitride-oxide.
28. The method of claim 17, wherein the wordline layer is a
polysilicon with a metal silicide.
29. The method of claim 17, wherein said substrate is selected from
silicon, gallium arsenide, germanium, and combination thereof.
30. The method of claim 17 further comprising performing a
source/drain anneal.
31. The method of claim 17, wherein forming includes depositing,
doping, and patterning one or more said formed layers, wherein
individually said first, second, and additional dopant
concentrations is for a material selected from arsenic, boron,
phosphor, an element from Group III and V of the periodic table,
and combinations thereof.
32. The method of claim 17, wherein said depositing is by chemical
vapor deposition or spin on glass.
Description
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is a division of U.S. patent application
Ser. No. 10/818,564, filed Apr. 6, 2004, which is a continuation of
U.S. patent application Ser. No. 10/143,450, filed May 10, 2002,
now U.S. Pat. No. 6,756,268, which is a division of U.S. patent
application Ser. No. 09/769,162 filed Jan. 24, 2001 (now
abandoned).
BACKGROUND OF THE INVENTION
[0002] The present invention relates to the field of semiconductor
manufacture and, more particularly, to a modified source/drain
re-oxidation process.
[0003] As computers become increasingly complex, the need for
memory storage, and in particular the number of memory cells,
increases. At the same time, there is the need to minimize the size
of computers and memory devices. A goal of memory device
fabrication is to increase the number of memory cells per unit area
or wafer area.
[0004] Memory devices contain blocks or arrays of memory cells. A
memory cell stores one bit of information. Bits are commonly
represented by the binary digits 0 and 1. A conventional
non-volatile semiconductor memory device in which contents can be
electrically programmable or simultaneously erased by one operation
is a flash memory device.
[0005] Flash memory devices have the characteristics of low power
and fast operation making them ideal for portable devices. Flash
memory is commonly used in portable devices such as laptop or
notebook computers, digital audio players and personal digital
assistant (PDA) devices.
[0006] In flash memory, a charged floating gate is zero logic
state, typically represented by the binary digit 0, while a
non-charged floating gate is the opposite logic state typically
represented by the binary digit 1. Charges are injected or written
to a floating gate by any number of methods, including avalanche
injection, channel injection, Fowler-Nordheim tunneling, and
channel hot electron injection, for example.
[0007] The key performance parameters of a flash memory cell are
programming rates, erase rates, and data retention. These
parameters are a strong function of the post source drain
re-oxidation gate edge profile. This profile is also referred to as
a reox smile. During source drain re-oxidation, the thickness of
the tunnel oxide and oxide-nitride-oxide (ONO) layers are increased
along the exposed edge of the gate electrodes. The profile of this
thickness enhancement plays a major role in the performance of a
flash memory cell. As the thickness of this profile increases,
reliability and data retention increases while erase rates or
speeds worsen. Thus, it is desirable to accurately control the
thickness of this profile. However, there are only limited ways to
modify this profile. A common way to attempt to modify the profile
is controlling the conditions of the re-oxidation. The conditions
controlled are source and drain doping concentration profiles
before oxidation. However, this approach is limited.
[0008] Enhancing the ability to control this source drain
re-oxidation gate edge profile is desirable.
SUMMARY OF THE INVENTION
[0009] A method that can be used to modify the smile profile during
the fabrication of semiconductor devices, such as flash memory, is
disclosed. A memory cell structure is defined on a substrate. A
layer of phosphorous-doped oxide is deposited over substrate.
Horizontal surfaces of the layer of phosphorous-doped oxide are
selectively removed while vertical surfaces of the
phosphorous-doped oxide remain. The horizontal surfaces are
substantially planar to the substrate surface. The vertical
surfaces are substantially perpendicular to the substrate
surface.
[0010] A method for fabricating a flash memory cell is disclosed. A
self align source is formed on a substrate. A drain is formed on
the substrate. A layer of phosphorous-doped oxide is deposited on
the substrate. Portions of the phosphorous-doped oxide layer are
removed leaving remaining portions of the phosphorous-doped oxide
layer. Standard re-oxidation is performed on the substrate.
[0011] A semiconductor device is disclosed. The semiconductor
device includes a substrate, a drain, a self aligned source, a
first oxide layer, a first polysilicon layer, a second dielectric
layer, a second polysilicon layer and a phosphorous doped oxide
layer. The drain is formed in the substrate. The self align source
is formed in the substrate. The first oxide layer is deposited in
the substrate from the drain to the self align source. The first
polysilicon layer is deposited over the first oxide layer. The
second dielectric layer is deposited over the first polysilicon
layer. The second polysilicon layer is deposited over the second
oxide layer. A phosphorous-doped oxide layer is located only along
edges of the first oxide layer, the first polysilicon layer, the
second oxide layer and the second polysilicon layer.
[0012] Other methods and devices are disclosed.
BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
[0013] The following detailed description of the present invention
can be best understood when read in conjunction with the
accompanying drawings, where like structure is indicated with like
reference numerals.
[0014] FIG. 1 illustrates a semiconductor device for flash
memory.
[0015] FIG. 2A illustrates a semiconductor device prior to
re-oxidation.
[0016] FIG. 2B illustrates a semiconductor device after
re-oxidation.
[0017] FIG. 3A illustrates a portion of a semiconductor device
according to one embodiment of the invention.
[0018] FIG. 3B illustrates the portion of the semiconductor device
after re-oxidation according to one embodiment of the
invention.
[0019] FIG. 4A illustrates standard self aligned source doping
after source implant and re-oxidation.
[0020] FIG. 4B illustrates self align source doping according to
one embodiment of the invention.
[0021] FIG. 4C illustrates self align source doping according to
one embodiment of the invention.
[0022] FIG. 5 illustrates a flash memory device according to one
embodiment of the invention.
[0023] FIG. 6 illustrates a method according to one embodiment of
the invention.
[0024] FIG. 7 illustrates a method according to one embodiment of
the invention.
[0025] FIG. 8 illustrates a method according to one embodiment of
the invention.
[0026] FIG. 9 is a computer system in with which embodiments of the
invention may be used.
DETAILED DESCRIPTION OF THE INVENTION
[0027] For the purposes of describing and defining the present
invention, formation of a material "on" a substrate or layer refers
to formation in contact with a surface of the substrate or layer.
Formation "over" a substrate or layer refers to formation above or
in contact with a surface of the substrate. Formation "in" a
substrate or layer refers to formation of at least a portion of a
structure in the interior of a substrate or layer. A "wafer" is a
thin, usually round slice of semiconductor material, such as
silicon, from which chips are made. A "substrate" is the underlying
material upon which a device, circuit, or epitaxial layer is
fabricated. A "flash memory device" includes a plurality of memory
cells. Each "memory cell" of a flash memory device can comprise
components such as a gate, floating gate, control gate, wordline,
channel region, a source, self aligned source and a drain. A self
align source (SAS) is a semiconductor structure that allows a
number of cells to share a common source or source junction. An
"anneal" is a high temperature processing step designed to minimize
stress in the crystal structure of the wafer. The term "patterning"
refers to one or more steps that result in the removal of selected
portions of layers. The patterning process is also known by the
names photomasking, masking, photolithography and
microlithography.
[0028] FIG. 1 illustrates a semiconductor device 100 for flash
memory. FIG. 1 is prior art. The device 100 includes a substrate
107, a source 101, a drain 102, a tunnel oxide 103, a first
polysilicon (poly) layer 104, a dielectric layer 105 and a second
poly layer 106.
[0029] The substrate 107 is typically comprised of silicon. The
source 101 and drain 102 are formed in the substrate 107 by doping.
The source 101 can be created by doping with As (arsenic) and P
(phosphor), individually or in combination. The drain 102 can be
formed by doping with As. The tunnel oxide layer 103 is formed as
shown in FIG. 1 and stretches from the source 101 to the drain 102.
The first poly layer 104 is formed over the tunnel oxide layer 103.
The first poly layer is typically a floating gate. The first poly
layer 104 is typically lightly doped. The dielectric layer 105 is
formed over the first poly layer 104. It can be composed of a
dielectric such as oxide nitride oxide (ONO). The second poly layer
106 is formed over the dielectric layer 105. The second poly layer
106 can be comprised of any suitable conductor, but it typically is
a poly with a metal silicide. The second poly layer 106 can be a
wordline.
[0030] FIG. 2A illustrates a portion of a semiconductor device
prior to re-oxidation. FIG. 2A is prior art. A source 201 has
already been formed by doping a semiconductor 207. A tunnel oxide
layer 202 has been formed over the surface of the semiconductor 207
and a floating gate poly layer 203 has been formed over the tunnel
oxide layer. The tunnel oxide layer 202 is formed to a specific
thickness or original thickness 211.
[0031] FIG. 2B illustrates the portion of the semiconductor device
after re-oxidation. FIG. 2B is prior art. A re-oxidation oxide
profile 208 has formed as shown in FIG. 2B over surfaces of the
device. The re-oxidation oxide profile 208 has two important
characteristics or parameters, height 209 and width 210. The height
209 is the vertical distance from the top of the source 201
(silicon surface) to the bottom edge of the floating gate poly
layer 203 as shown in FIG. 2B. The width 210 is the horizontal
distance from the edge of the floating gate poly layer 203 to the
point where the tunnel oxide starts getting thicker than the
original thickness 211 and the thickness of the rest of the channel
region. The height 209 and width 210 parameters have a large effect
on the operation of the flash memory device. As the height 209
increases, the reliability of the flash memory device increases but
erase speed decreases. As the width 210 increases, erase speed
decreases. However, with standard re-oxidation techniques, it is
difficult to control these parameters, 209 and 210, and the
re-oxidation profile 208.
[0032] FIG. 3A illustrates a portion of a semiconductor device
according to one embodiment of the invention. The portion of the
semiconductor device includes a source 301 formed in a
semiconductor 307. A tunnel oxide layer 302 is formed over the
surface of the semiconductor 307 and the surface of the source 301
as shown in FIG. 3A. The floating gate poly layer 303 is formed
over the tunnel oxide layer 302. An ONO layer 304 is formed over
the floating gate poly layer 303. Another poly layer or wordline
poly layer 305 is formed over the ONO layer 304. The phosphorous
doped oxide has been formed over all surfaces of the semiconductor
and removed from all substantially horizontal surfaces so that the
remaining phosphorous doped oxide 306 is only on substantially
vertical surfaces such as is shown in figure 3A. The
phosphorous-doped oxide can be formed over the semiconductor by
using methods such as chemical vapor deposition or spin on glass
(SOG). Using the SOG method could create higher dopant
concentrations. The phosphorous-doped oxide can be removed from
substantially horizontal surfaces by etching such as, for example,
an anisotropic etch.
[0033] FIG. 3B illustrates the portion of the semiconductor device
after re-oxidation according to one embodiment of the invention. A
re-oxidation oxide profile 308 has formed as shown in FIG. 3B over
surfaces of the device. The re-oxidation oxide profile 308 has two
important characteristics or parameters, height 309 and width 310.
The height 309 is the vertical distance from the top of the source
301 (silicon surface) to the bottom edge of the floating gate poly
layer 303 as shown in FIG. 3B. The width 310 is the horizontal
distance from the edge of the floating gate poly layer 303 to the
point where the tunnel oxide layer 302 starts getting thicker than
the original thickness 311 and the thickness of the rest of the
channel region. The height 309 and width 310 parameters have a
large effect on the operation of the flash memory device. As the
height 309 increases, the reliability of the flash memory device
increases but erase speed decreases. As the width 310 increases,
erase speed decreases. However, with standard re-oxidation
techniques, it is difficult to tailor these parameters, 309 and
310, and the re-oxidation profile 308. By having utilized the
phosphor doped oxide 306, the height 309 is similar to the height
of the device of FIGS. 2A-2C but, the width is significantly less
than the width of the device in FIGS. 2A-2C. Thus, the data
retention of the device in FIG. 3 will be similar to the data
retention of the device in FIG. 2, but the erase speed of the
semiconductor device of figure 3 is likely significantly better
than the device of FIG. 2. An additional benefit is that the
resistance of the source rail or common source may be lowered.
[0034] FIG. 4A illustrates standard self aligned source 400 doping
after source implant and re-oxidation. FIG. 4A is prior art. The
source doping takes place at 403. The horizontal surfaces 402 are
heavily doped and the vertical surfaces 401 are lightly doped. The
resistance of the self align source 400 is a function of the dopant
atom concentration of along it. Because of steep profiles formed
during shallow trench isolation processes, the concentration of
dopant atoms along the self align source is not uniform. Atoms
implanted in the steep slope or vertical surfaces 401 have a lower
effective concentration due to the nature of the implant process.
This decrease in concentration along the vertical surfaces 401 of
the self align source, leads to higher than expected self aligned
source resistance. This problem increases as the depth of the
shallow trench increases and this is one of the limiting factors
for increasing the trench depth.
[0035] FIG. 4B illustrates self align source 400 doping according
to one embodiment of the invention. FIG. 4B is prior to
re-oxidation and after source implants 403 and phosphorous doped
oxidation 404 and etching. Phosphorous doped oxide has been removed
from the horizontal surfaces 402 so that the phosphorous doped
oxide 404 only remains on the vertical surfaces 401. FIG. 4C
illustrates self align source 400 doping according to one
embodiment of the invention. FIG. 4C is the self align source of
FIG. 4B after re-oxidation. The vertical surfaces 401 have
increased doping from phosphorus diffusing out of the phosphorous
doped oxide 404. Thus, the vertical surfaces 401 and horizontal
surfaces 402 are more evenly doped than the respective surfaces of
FIG. 4A. Furthermore, by supplying an additional source of dopant
directly to the vertical surfaces 401, the overall self align
source resistance can be improved. The rail resistance-limiting
factor for trench depth can be greatly reduced or eliminated.
Additionally, the phosphorous doped oxide prevents out-diffusion of
phosphorus from regions which are covered by the phosphorous doped
oxide 405 during high temperature thermal cycling that follows. The
re-oxidation oxide 405 is formed over the phosphorous doped oxide
404 and horizontal surfaces 402.
[0036] FIG. 5 illustrates a flash memory device according to one
embodiment of the invention. The device is fabricated on a silicon
substrate 509. The self align source 501 is formed in the silicon
substrate 509. The floating gate layer 504 is formed over the
substrate 509. The floating gate layer 504 typically has a tunnel
oxide layer between itself and the substrate 509, but the tunnel
oxide layer cannot be seen in FIG. 5. An ONO layer is formed over
the floating gate layer 504 but is not visible in FIG. 5. A
wordline poly layer 506 is formed under the ONO layer. Field
isolation oxide 507 is formed over the wordline poly layer 506.
Phosphorous-doped oxide 508 is formed on steep or substantially
vertical surfaces. An example of forming the phosphorous-doped
oxide 508 is to use chemical vapor deposition.
[0037] The phosphorous-doped oxide 508 is able to modify the source
drain re-oxidation process three ways. First, it can act as a
dopant source which allows for adjusting the doping concentration
profile 510 from the edge inward for the floating gate poly 504 and
from the surface downward for the silicon substrate 509. Secondly,
the phosphorous doped oxide 508 acts as a barrier against
phosphorus out-diffusion during high temperature processing. High
temperature processing normally occurs during re-oxidation. Third,
the phosphorous doped oxide acts as a barrier against the diffusion
of oxygen during re-oxidation processes which reduce the lateral
oxide encroachment under the floating gate layer 504.
[0038] The oxidation rate of silicon and poly-silicon is dependent
on the type and concentration of the dopant atoms. Generally, the
higher the concentration, the higher the oxidation rate.
Additionally, the oxidation rate is dependent on the ability of
oxygen and silicon to react. The greater the distance that these
atoms need to diffuse, the lower the oxidation rate. By utilizing
the phosphorous-doped oxide, the concentration profile, edge to
center for the floating gate poly can be adjusted and the oxidation
rate can be reduced.
[0039] The key characteristics of the phosphorous-doped oxide are
thickness and phosphor concentration. Some acceptable ranges for
thickness is 25 .ANG. to 500 .ANG. and the phosphorous
concentration is 1% to 6%. The range of thickness and phosphor
concentrations affect the programming rate, erase rate and data
retention by assisting (concentration) or reducing(thickness) the
oxidation rate in the smile region. Other dopants besides phosphor
can be used in the doped oxide.
[0040] FIG. 6 illustrates a method according to one embodiment of
the invention. A memory cell structure is defined on a substrate at
block 601. The memory cell structure can be all or part of a memory
cell. The memory cell structure can define the dimensions and
locations of the memory cell and its components, such as source and
drain, on the substrate. A source and drain are formed in a
semiconductor at block 602. The source can be a self align source.
A layer of phosphorous-doped oxide is deposited over the
semiconductor at 603. Generally, the phosphorous-doped oxide is
deposited over the semiconductor using chemical vapor deposition.
The phosphorous-doped oxide is removed from substantially
horizontal surfaces at 604 so that the oxide only remains on
substantially vertical surfaces. Normal re-oxidation is performed
to finish fabricating the memory cell.
[0041] FIG. 7 illustrates a method of fabricating a flash memory
cell according to one embodiment of the invention. The dimensions
of the flash memory cell are defined at block 701 on a substrate.
The source side of the flash cell is blocked at 702. The drain side
is implanted with boron-11 at 703. The block is then removed from
the source side at block 704. The drain side is blocked at 705. An
oxide dry etch is performed in order to remove isolation oxide
along a self align source at block 706. The source is implanted
with phosphor-31 and arsenic-75 in order to dope the self align
source 707. The block is removed from the drain side at 708. A
layer of phosphorous-doped oxide is deposited over the flash memory
cell at block 709. The thickness of the phosphorous doped oxide and
the phosphor concentration of the phosphorous doped oxide are
selected to achieve desired characteristics of the flash memory
cell, such as program rate, erase rate and data retention. For
illustrative purposes, some typical thickness and phosphor
concentrations are 25 .ANG. to 500 .ANG. and 1% to 6%. A
directional plasma etch is performed to remove phosphorous doped
oxide from horizontal surfaces at 710. The directional plasma etch
selectively leaves the phosphorous doped oxide on only the steep or
substantially vertical sections of the substrate compared to the
plane of the substrate surface. Normal re-oxidation is performed at
block 711.
[0042] FIG. 8 illustrates a method of fabricating a memory cell
according to one embodiment of the invention. The memory cell can
be a flash, EPROM or EEPROM type memory cell. A substrate is
provided at block 801. A tunnel oxide layer is formed over the
substrate at block 802. The tunnel oxide layer can be deposited
over the substrate. A floating gate polysilicon layer is formed
over the tunnel oxide layer at block 803. The floating gate
polysilicon layer is then patterned and etched at block 804. An ONO
layer is formed over the floating gate polysilicon layer at block
805. A wordline polysilicon layer is formed over the ONO layer at
block 806. The wordline polysilicon layer is then patterned and
etched at block 807. The drain is patterned and etched at block
808. The drain is implanted with Boron at block 809. The source is
patterned at block 810. The source is then etched at block 811. The
source is implanted with phosphor at block 812. The source is
implanted with arsenic at block 813. Phosphor doped oxide is
deposited over the polysilicon layer at block 814. The thickness of
the phosphorous-doped oxide and the phosphor concentration of the
phosphorous-doped oxide are selected to achieve desired
characteristics of the memory cell, such as program rate, erase
rate and data retention. For illustrative purposes, some typical
thickness and phosphor concentrations are 25 .ANG. to 500 .ANG. and
1% to 6%. A directional plasma etch is performed to remove
phosphorous doped oxide from substantially horizontal surfaces at
block 815. A source/drain reoxidation is performed at block 816.
The source and drain are implanted with arsenic at block 817. A
source and drain anneal is performed at block 818.
[0043] The resulting memory cell will likely have increased erase
rates and programming rates compared to other conventional memory
cells. Furthermore, the resulting memory cell can be fabricated
according to more specific dimensions and parameters.
[0044] FIG. 9 is an illustration of a computer system 912 that can
use and be used with embodiments of the present invention. As will
be appreciated by those skilled in the art, the computer system 912
would include ROM 914, mass memory 916, peripheral devices 918, and
I/O devices 920 in communication with a microprocessor 922 via a
data bus 924 or another suitable data communication path. The
memory devices 914 and 916 can be fabricated according to the
various embodiments of the present invention. ROM 914 can include
EPROM, EEPROM, or flash memory. Mass memory 916 can include DRAM,
synchronous RAM or flash memory.
[0045] Many other electronic devices can be fabricated utilizing
various embodiments of the present invention. For example, memory
devices according to embodiments of the invention can be used in
electronic devices such as cell phones, digital cameras, digital
video cameras, digital audio players, cable television set top
boxes, digital satellite receivers, personal digital assistants and
the like.
[0046] Having described the invention in detail and by reference to
preferred embodiments thereof, it will be apparent that
modifications and variations are possible without departing from
the scope of the invention defined in the appended claims. Other
suitable materials may be substituted for those specifically
recited herein. For example, the substrate may be composed of
semiconductors such as gallium arsenide or germanium. Additionally,
other dopants may be utilized besides those specifically stated.
Generally, dopants are found in groups III and V of the periodic
table.
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