Rudeck; Paul J.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Rudeck; Paul J..The latest application filed is for "methods of filling isolation trenches for semiconductor devices and resulting structures".

Company Profile

0.30.39

Rudeck; Paul J. - Hillsboro OR
Rudeck; Paul J. - Boise ID
Rudeck; Paul J. - Bronx NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Methods Of Filling Isolation Trenches For Semiconductor Devices And Resulting Structures App 20130009276 - Rudeck; Paul J. ; et al.	2013-01-10
Methods of filling isolation trenches for semiconductor devices and resulting structures Grant 8,304,322 - Rudeck , et al. November 6, 2	2012-11-06
Semiconductor contact device Grant 7,932,557 - Rudeck April 26, 2	2011-04-26
Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device Grant 7,429,514 - Rudeck , et al. September 30, 2	2008-09-30
Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack Grant 7,420,240 - Rudeck September 2, 2	2008-09-02
Semiconductor contact device and method Grant 7,294,567 - Rudeck November 13, 2	2007-11-13
Methods of filling isolation trenches for semiconductor devices and resulting structures App 20070243692 - Rudeck; Paul J. ; et al.	2007-10-18
Minimizing adjacent wordline disturb in a memory device Grant 7,272,039 - Rudeck , et al. September 18, 2	2007-09-18
Modified source/drain re-oxidation method and system Grant 7,271,435 - Rudeck , et al. September 18, 2	2007-09-18
Minimizing adjacent wordline disturb in a memory device Grant 7,257,024 - Rudeck , et al. August 14, 2	2007-08-14
Minimizing adjacent wordline disturb in a memory device Grant 7,212,435 - Rudeck , et al. May 1, 2	2007-05-01
Non-volatile memory cells without diffusion junctions App 20060278913 - Mihnea; Andrei ; et al.	2006-12-14
Semiconductor contact device Grant 7,148,547 - Rudeck December 12, 2	2006-12-12
Gate coupling in floating-gate memory cells App 20060267070 - Rudeck; Paul J.	2006-11-30
Semiconductor Contact Device App 20060237800 - Rudeck; Paul J.	2006-10-26
Gate coupling in floating-gate memory cells Grant 7,115,458 - Rudeck October 3, 2	2006-10-03
Minimizing adjacent wordline disturb in a memory device App 20060198222 - Rudeck; Paul J. ; et al.	2006-09-07
Minimizing adjacent wordline disturb in a memory device App 20060198221 - Rudeck; Paul J. ; et al.	2006-09-07
Programmable memory devices supported by semiconductor substrates Grant 7,091,549 - Rudeck , et al. August 15, 2	2006-08-15
Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device App 20060166460 - Rudeck; Paul J. ; et al.	2006-07-27
Modified source/drain re-oxidation method and system Grant 7,037,860 - Rudeck , et al. May 2, 2	2006-05-02
Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device Grant 7,015,111 - Rudeck , et al. March 21, 2	2006-03-21
Methods and structure for an improved floating gate memory cell Grant 7,015,098 - Rudeck March 21, 2	2006-03-21
Gate coupling in floating-gate memory cells App 20060043458 - Rudeck; Paul J.	2006-03-02
Minimizing adjacent wordline disturb in a memory device App 20060002167 - Rudeck; Paul J. ; et al.	2006-01-05
Modified source/drain re-oxidation method and system App 20050272203 - Rudeck, Paul J. ; et al.	2005-12-08
Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack App 20050098820 - Rudeck, Paul J.	2005-05-12
Programmable memory devices supported by semiconductor substrates App 20050098825 - Rudeck, Paul J. ; et al.	2005-05-12
Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device App 20050090061 - Rudeck, Paul J. ; et al.	2005-04-28
Programmable memory devices supported by semiconductor substrates Grant 6,873,005 - Rudeck , et al. March 29, 2	2005-03-29
Semiconductor contact device App 20050026350 - Rudeck, Paul J.	2005-02-03
Methods for fabricating an improved floating gate memory cell Grant 6,849,501 - Rudeck February 1, 2	2005-02-01
Methods and structure for an improved floating gate memory cell App 20050009276 - Rudeck, Paul J.	2005-01-13
Programmable memory devices supported by semiconductor substrates App 20040201060 - Rudeck, Paul J. ; et al.	2004-10-14
Programmable memory devices supported by semiconductive substrates Grant 6,803,624 - Rudeck , et al. October 12, 2	2004-10-12
Modified source/drain re-oxidation method and system App 20040185620 - Rudeck, Paul J. ; et al.	2004-09-23
Methods of forming programmable memory devices comprising tungsten Grant 6,777,291 - Rudeck , et al. August 17, 2	2004-08-17
Modified source/drain re-oxidation method and system Grant 6,756,268 - Rudeck , et al. June 29, 2	2004-06-29
Method and structure for an oxide layer overlying an oxidation-resistant layer App 20040113196 - Rudeck, Paul J. ; et al.	2004-06-17
Method to remove an oxide seam along gate stack edge, when nitride space formation begins with an oxide liner surrounding gate stack Grant 6,713,350 - Rudeck March 30, 2	2004-03-30
Method To Remove An Oxide Seam Along Gate Stack Edge, When Nitride Space Formation Begins With An Oxide Liner Surrounding Gate Stack App 20040029319 - Rudeck, Paul J.	2004-02-12
Programmable memory devices comprising tungsten App 20040004243 - Rudeck, Paul J. ; et al.	2004-01-08
Programmable memory devices comprising tungsten, and methods of forming programmable memory devices comprising tungsten App 20040005760 - Rudeck, Paul J. ; et al.	2004-01-08
Method and structure for an improved floating gate memory cell App 20030203557 - Rudeck, Paul J.	2003-10-30
Advanced metallization approach for forming self-aligned contacts and local area interconnects for memory and logic devices App 20030170954 - Rudeck, Paul J.	2003-09-11
Method and structure for an improved floating gate memory cell Grant 6,611,019 - Rudeck August 26, 2	2003-08-26
Method and structure for an improved floating gate memory cell Grant 6,608,346 - Rudeck August 19, 2	2003-08-19
Method and structure for an improved floating gate memory cell Grant 6,566,195 - Rudeck May 20, 2	2003-05-20
Flash memory cell for high efficiency programming App 20030053338 - Mihnea, Andrei ; et al.	2003-03-20
Flash memory cell for high efficiency programming App 20030031055 - Mihnea, Andrei ; et al.	2003-02-13
Modified source/drain re-oxidation method and system App 20020132427 - Rudeck, Paul J. ; et al.	2002-09-19
Flash memory cell for high efficiency programming Grant 6,449,189 - Mihnea , et al. September 10, 2	2002-09-10
Flash memory cell for high efficiency programming Grant 6,445,619 - Mihnea , et al. September 3, 2	2002-09-03
Modified source/drain re-oxidation method and system App 20020096707 - Rudeck, Paul J. ; et al.	2002-07-25
Modified source/drain re-oxidation method and system App 20020096706 - Rudeck, Paul J. ; et al.	2002-07-25
Method And Structure For An Improved Floating Gate Memory Cell App 20020094636 - RUDECK, PAUL J.	2002-07-18
Method and structure for an improved floating gate memory cell App 20020084483 - Rudeck, Paul J.	2002-07-04
Method and structure for an improved floating gate memory cell App 20020086482 - Rudeck, Paul J.	2002-07-04
Method and structure for an improved floating gate memory cell App 20020081805 - Rudeck, Paul J.	2002-06-27
Flash memory cell for high efficiency programming Grant 6,384,447 - Mihnea , et al. May 7, 2	2002-05-07
Flash memory cell for high efficiency programming App 20020031010 - Mihnea, Andrei ; et al.	2002-03-14
Method and structure for an oxide layer overlying an oxidation-resistant layer App 20020014654 - Rudeck, Paul J. ; et al.	2002-02-07
Flash memory cell for high efficiency programming App 20020001228 - Mihnea, Andrei ; et al.	2002-01-03
Flash memory cell for high efficiency programming App 20020001232 - Mihnea, Andrei ; et al.	2002-01-03
Flash memory cell for high efficiency programming App 20010055224 - Mihnea, Andrei ; et al.	2001-12-27
Flash memory cell for high efficiency programming App 20010043490 - Mihnea, Andrei ; et al.	2001-11-22
Method and structure for an oxide layer overlaying an oxidation-resistant layer Grant 6,297,092 - Rudeck , et al. October 2, 2	2001-10-02
Flash memory cell Grant 6,272,047 - Mihnea , et al. August 7, 2	2001-08-07
Alignment mark system for electron beam/optical mixed lithography Grant 4,893,163 - Rudeck January 9, 1	1990-01-09

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