U.S. patent application number 10/921341 was filed with the patent office on 2005-10-13 for plasma processing apparatus.
Invention is credited to Edamura, Manabu, Miya, Go, Yoshioka, Ken.
Application Number | 20050224182 10/921341 |
Document ID | / |
Family ID | 35059360 |
Filed Date | 2005-10-13 |
United States Patent
Application |
20050224182 |
Kind Code |
A1 |
Edamura, Manabu ; et
al. |
October 13, 2005 |
Plasma processing apparatus
Abstract
The invention provides an inductively coupled plasma apparatus
capable of disposing a parallel coil with a large number of total
turns in a relatively small space. The present plasma processing
apparatus comprises a processing chamber for subjecting an object
to plasma processing, an inlet means for introducing a processing
gas into the processing chamber, an evacuation means for evacuating
an interior of the processing chamber, a sample stage for placing
the object, a power supply means for generating plasma, and at
least one induction coil connected to the power supply means,
wherein the induction coil is formed by connecting a plurality of
identical coil elements 101 in a parallel circuit-like arrangement,
the induction coil being positioned so that its center corresponds
to a center of the object, and wherein input ends 101 in of the
coil elements 101 are arranged at equal angular intervals
calculated by dividing 360.degree. by the number of coil elements,
the coil elements having a three-dimensional structure in a radial
direction and a height direction along a surface of an annular ring
with an arbitrary cross-sectional shape.
Inventors: |
Edamura, Manabu;
(Ibaraki-ken, JP) ; Miya, Go; (Tokyo, JP) ;
Yoshioka, Ken; (Hikari-shi, JP) |
Correspondence
Address: |
ANTONELLI, TERRY, STOUT & KRAUS, LLP
1300 NORTH SEVENTEENTH STREET
SUITE 1800
ARLINGTON
VA
22209-3873
US
|
Family ID: |
35059360 |
Appl. No.: |
10/921341 |
Filed: |
August 19, 2004 |
Current U.S.
Class: |
156/345.48 |
Current CPC
Class: |
H01J 37/321
20130101 |
Class at
Publication: |
156/345.48 |
International
Class: |
C23F 001/00 |
Foreign Application Data
Date |
Code |
Application Number |
Apr 13, 2004 |
JP |
2004-117894 |
Claims
What is claimed is:
1. A plasma processing apparatus comprising: a processing chamber
for subjecting an object to plasma processing; an inlet means for
introducing a gas for plasma processing into the processing
chamber; an evacuation means for evacuating an interior of the
processing chamber; a sample stage for placing the object; a power
supply means for generating plasma in the processing chamber; and
at least one induction coil connected to the power supply means,
wherein the induction coil is formed by connecting a plurality of
identical coil elements in a parallel circuit-like arrangement, the
induction coil being positioned so that its center corresponds to a
center of the object, and wherein input ends of the coil elements
are arranged at equal angular intervals calculated by dividing
360.degree. by the number of coil elements, the coil elements
having a three-dimensional structure in a radial direction and a
height direction along a surface of an annular ring with an
arbitrary cross-sectional shape.
2. The plasma processing apparatus according to claim 1, wherein
the annular ring is an insulating member, and conductor portions of
the coil elements are formed on the surface of the insulating
member.
3. The plasma processing apparatus according to claim 2, wherein a
refrigerant passage is formed to the insulating member for
cooling.
4. The plasma processing apparatus according to claim 2, wherein
the cross-sectional shape of the insulating member is polygonal,
and the conductor portions of the coil elements are formed on the
surface of the polygonal surface of the insulating member.
5. The plasma processing apparatus according to claim 2, wherein
the cross-sectional shape of the insulating member is circular, and
the conductor portions of the coil elements are formed on the
surface of the insulating member in a toroidal coil-like shape.
6. The plasma processing apparatus according to claim 1, wherein
the annular ring is a virtual annular ring, and conductor portions
of the coil elements are formed along a surface of the virtual
annular ring.
7. A plasma processing apparatus comprising: a processing chamber
for subjecting an object to plasma processing; an inlet means for
introducing a gas for plasma processing into the processing
chamber; an evacuation means for evacuating an interior of the
processing chamber; a sample stage for placing the object; a power
supply means for generating plasma in the processing chamber; and
at least one induction coil connected to the power supply means,
wherein the induction coil is formed by connecting a plurality of
identical coil elements in a parallel circuit-like arrangement, the
coil elements disposed on a surface of an annular ring having an
arbitrary cross-sectional shape, and formed to rotate along a
surface of the annular ring.
8. The plasma processing apparatus according to claim 7, wherein
the annular ring is an insulating member, and conductor portions of
the coil elements are formed on the surface of the insulating
member.
9. The plasma processing apparatus according to claim 8, wherein a
refrigerant passage is formed to the insulating member for
cooling.
10. The plasma processing apparatus according to claim 8, wherein
the cross-sectional shape of the insulating member is polygonal,
and the conductor portions of the coil elements are formed on a
polygonal surface of the insulating member.
11. The plasma processing apparatus according to claim 8, wherein
the cross-sectional shape of the insulating member is circular, and
the conductor portions of the coil elements are formed on the
surface of the insulating member in a toroidal coil-like shape.
12. The plasma processing apparatus according to claim 7, wherein
the annular ring is a virtual annular ring, and conductor portions
of the coil elements are formed along a surface of the virtual
annular ring.
13. The plasma processing apparatus according to claim 7, wherein
the coil elements are rotated for a predetermined angle at a time
in a circumferential direction of the annular ring, by which the
coil elements are rotated at a time from one face of the annular
ring to a face adjacent thereto.
14. The plasma processing apparatus according to any one of claims
7 through 12, wherein the coil elements are rotated
continuously.
15. The plasma processing apparatus according to any one of claims
7 through 14, wherein the induction coil is formed so that input
ends or output ends of the plural coil elements are disposed at
predetermined even angular intervals in the circumferential
direction of the annular ring.
16. The plasma processing apparatus according to any one of claims
7 through 15, wherein the annular ring is arranged so that a center
thereof corresponds to the center of the object.
17. The plasma processing apparatus according to claim 1 or claim
7, wherein plural induction coils are arranged concentrically.
Description
[0001] The present application is based on and claims priority of
Japanese patent application No. 2004-117894 filed on Apr. 13, 2004,
the entire contents of which are hereby incorporated by
reference.
FIELD OF THE INVENTION
[0002] The present invention relates to a plasma processing
apparatus preferably used for etching objects or depositing films
in the process of manufacturing semiconductor devices, liquid
crystal display substrates or the like.
DESCRIPTION OF THE RELATED ART
[0003] Along with the miniaturization of semiconductor devices,
process conditions (process window) of a plasma process that
realizes uniform processing to be carried out across the whole
wafer surface have become narrower, so there are increasing demands
for plasma processing apparatuses having more complete control of
the states of the processes. In order to answer to such demands, it
is required a plasma processing apparatus capable of controlling
the plasma distribution, the process gas dissociation and the
surface reaction within the reactor with very high accuracy.
[0004] At present, an RF inductively coupled plasma source is used
as plasma source for the above-mentioned type of plasma processing
apparatuses. One example of an inductively coupled plasma
processing apparatus is provided in which a radio frequency on the
order of a few hundred kHz to a few hundred MHz is supplied to an
RF coil generally in the shape of a loop, a coil or a helical
disposed outside the processing chamber via an insulating member
such as a quartz forming a part of the chamber, and the induction
field created via the coil accelerates the electrons in the plasma,
thereby supplying energy to the process gas introduced to the
interior of the processing chamber for generating plasma and
maintaining the generated plasma (refer for example to patent
document 1). Another example of an RF inductively coupled plasma
processing apparatus has a coil disposed within the chamber,
wherein a helical coil functioning as the RF induction coil is
disposed in the chamber at a position confronting a semiconductor
wafer which is the object to be processed (refer for example to
patent document 2).
[0005] This type of plasma processing apparatus is called an
inductively coupled plasma processing apparatus, since an induced
current is generated in the plasma, and the plasma and RF coil are
inductively coupled in a circuit-like manner (a transformer circuit
in which the coil is regarded as the primary coil and the current
in the plasma as the secondary coil). The inductively coupled
plasma processing apparatus is advantageous since it can generate
high density plasma on the order of 1.times.10.sup.11 through
1.times.10.sup.12 (cm.sup.-3) in a low pressure of a few mTorr,
generate plasma easily in a large area, and reduce the amount of
contaminants entering the surface of the object being subjected to
processing, by a simple and inexpensive arrangement using a simple
coil and an RF power supply. In such apparatuses, high density
plasma is generated at low pressure, according to which the ions
have greater mean free path and are incident on the object being
processed with advantageous directional property, so such
apparatuses are specifically appropriate for microfabrication using
plasma etching technology, and can realize high processing
speed.
[0006] The semiconductor wafer or other objects subjected to plasma
processing is substantially circular, so the chamber of the plasma
processing apparatus in which the wafer is processed often has a
correspondingly circular inner horizontal cross-section. In a
plasma etching apparatus, for example, processing gas is introduced
either from the center or the side wall of the chamber, and in most
cases evacuated from the bottom. It is desirable that the wafer
etching is completely uniform across the wafer surface, but in
actual, the reaction on the wafer surface is not completely uniform
due to the non-uniform distribution of plasma, dissociated species
and reaction products within the reaction chamber. For example, the
reaction products are generated from the wafer, so the
concentration thereof is necessarily higher at the center of the
chamber. Therefore, in order to overcome this etching
non-uniformity caused by non-uniform concentration and to achieve
uniform wafer etching, measures such as reducing the plasma density
at the outer circumference than at the center or reducing the water
temperature at the outer circumference than at the center are
taken. On the other hand, non-uniformity in the circumferential
direction of the wafer is sometimes caused due to the uneven gas
flow or plasma generation, but unlike the non-uniformity in the
radial direction of the wafer, the non-uniformity in the
circumferential (azimuthal) direction can be solved easily. As for
the gas flow, it is possible to make the circumferential flow
uniform by optimizing the discharge mechanism disposed at the
bottom of the chamber.
[0007] [Patent Document 1]
[0008] Japanese Patent Application Laid-Open No. 2-235332
[0009] [Patent Document 2]
[0010] Japanese Patent Application Laid-Open No. 7-106095
[0011] [Patent Document 3]
[0012] Japanese Patent Application Laid-Open No. 8-321490 (U.S.
Pat. No. 5,753,044)
[0013] [Non-Patent Document 1]
[0014] J. Appl. Phys. 80 (3), 1 Aug. 1996, p. 1337 "A
three-dimensional model for inductively coupled plasma etching
reactors", Mark J. Kushner et al.
[0015] [Non-Patent Document 2]
[0016] Rev. Sci. Instrum. Vol. 66, No. 11, November 1995, p. 5262
"New inductively coupled plasma source using a multispiral coil",
Okumura et al.
[0017] However, in an inductively coupled plasma processing
apparatus, non-uniformity in the circumferential (azimuthal)
direction occurs due to the configuration of the apparatus. That
is, a coil always has an end connected to the RF power supply and
another end connected to ground, and this coil configuration causes
plasma non-uniformity in the circumferential direction. Further,
since in the low density areas the electrons are directly
accelerated by the voltage applied to the coil, plasma is generated
in a capacitively-coupled manner and influences the process. Since
the voltage applied to the coil is not constant, a large amount of
such capacitively-coupled plasma may be generated in areas where
the voltage is high, while in other cases, the current loss caused
by parasitic capacitance existing in parallel to the coil may
oppositely cause plasma density to be lower where the voltage is
high, according to which non-uniformity in the circumferential
direction occurs (for example, refer to non-patent document 1).
[0018] In order to solve this problem, a structure is proposed in
which plural identical coils are arranged in parallel at even
angular intervals. For example, there is a proposal of a structure
in which three coil circuits are disposed at even angular intervals
of 120.degree. so as to improve the circumferential-direction
uniformity (for example, refer to patent document 3). The coils are
wound vertically, horizontally or along a dome structure. According
to the disclosure of patent document 3 in which plural identical
coil elements are connected in parallel in a circuit-like manner,
the total inductance of the induction coil composed of plural coil
elements is reduced. However, according to such arrangement, along
with the increase of the number of coils, the power supply to the
coils is restricted to be supplied only from the center of the
arrangement, by which the limitation regarding the design of the
apparatus becomes great.
[0019] A similar arrangement as the one disclosed in above patent
document 3 is proposed, in which the plasma apparatus is equipped
with four coil elements disposed at 90.degree. intervals (for
example, refer to non-patent document 2). The document discloses
that when an induction coil is formed of four coil element circuits
connected in parallel, it is known that the inductance thereof is
reduced to 57% that of a single coil circuit. However, since the
coils are disposed adjacent one another, due to mutual induction,
the inductance is not reduced to the theoretical value of 25% of
the case where four coils are disposed completely independently
from one another.
[0020] Here, the RF voltage E applied to the coil is calculated by
the equation E=I.multidot.Z, wherein I represents coil current and
Z represents impedance. According to equation Z=2.pi.f.multidot.L
in which f represents power supply frequency, when the same power
is supplied, the reduction of induction causes voltage in the coil
to be reduced and current to be increased. In designing an
inductively coupled plasma apparatus, there are various factors in
determining the most preferable level of current and voltage. The
increased voltage causes the plasma to have better ignition
property and low-density stability, but on the one hand, causes
increase of damage caused by ion sputtering of the insulating
member disposed between the induction coil and plasma. On the other
hand, design-related problems occur by the increased current, such
as heating, the loss caused thereby, and current resistance of the
variable capacitor used in the matching network. The increase in
voltage causes problems such as abnormal discharge, undesirable
effect to plasma, and voltage resistance of the variable
capacitor.
[0021] Now, we will assume that there is a need to design an
induction coil having a certain amount of inductance (for example,
1 .mu.H) from the viewpoint of current and voltage resistance of
the matching network. By using an induction coil of 1 .mu.H with a
single turn, the total number of turns is, of course, one. By
referring to the data disclosed in the paper of Okumura et al.
(non-patent document 2), if a plurality of such coils are connected
in parallel in a circuit-like manner to form a four-turn
arrangement with 90.degree. angular intervals, the inductance
becomes 0.57 .mu.H, and the total number of turns will be four.
This inductance is too small, so in order to achieve an inductance
of 1 .mu.H with four parallel coil circuits, the coil must have
approximately 1.5 turns per circuit, and the total number of turns
must be six. In other words, in order to adopt a parallel coil
arrangement, the total number of turns is significantly increased
in order to achieve the same inductance as that of the single coil.
In order to achieve the inductance of a single coil with a single
turn by an arrangement composed of four parallel circuit coils, one
coil circuit must have 1.5 turns, resulting in a total of six
turns. According to patent document 3, the coil is wound vertically
or along a dome structure. According to non-patent document 2, the
coil is disposed horizontally on a plane. However, the difficulty
of adopting a parallel coil is that the space for disposing the
induction coil is limited from the viewpoint of apparatus
design.
[0022] The present invention aims mainly at providing an
inductively coupled plasma apparatus that solves the prior art
problems mentioned above caused especially by adopting a parallel
coil, the apparatus capable of disposing the parallel coil with a
large number of coil turns in a relatively narrow space, such as a
space for disposing a single-turn coil. Thus, the present invention
provides a plasma processing apparatus capable of overcoming the
problems of circumferential direction non-uniformity of plasma and
the difficulty of apparatus design, and capable of generating a
stable and uniform plasma with high efficiency under wider process
conditions.
[0023] The present invention provides an inductively coupled plasma
processing apparatus capable of solving the conventional problem of
circumferential non-uniformity of plasma, capable of generating
stable plasma at arbitrary locations with high efficiency under
wider process conditions.
SUMMARY OF THE INVENTION
[0024] The above-mentioned problems can be solved by a
configuration described below. That is, a plurality of induction
coil elements in parallel connection is not simply disposed
vertically or horizontally, but disposed to have a
three-dimensional structure, to thereby solve the problem of coil
space. Actually, for example, an annular insulating member
(insulating ring) having a quadrangular cross-section, for example,
is used to dispose four identical coil elements to the four planes
of the insulating ring (the lower, inner, upper and outer planes).
One coil element circuit extended from a power supply via a
matching network is disposed at first on an upper plane of the
insulating ring, runs along the outer plane forming a 90.degree.
turn, runs along the bottom plane forming a 90.degree. turn, runs
along the inner plane forming a 90.degree. turn, and returns to the
upper plane where it is connected to ground potential. In this
case, the number of turns per one circuit is
90.degree..times.3=270.degree. (3/4 turns). A total of four coil
circuits are disposed in the same manner at even circumferential
angular intervals of 90.degree.. At this time, the total number of
turns is three. When the coil elements form a 90.degree. turn on
the upper plane, one coil circuit totals in
90.degree..times.4=360.degree. (one turn), according to which the
total number of turns is four. Similarly, by utilizing an
insulating ring whose cross-sectional shape is polygonal with n
faces (n>4), the number of turns per circuit can be increased.
Moreover, by using the insulating ring with a quadrangular
cross-section and increasing the turns on a single plane to more
than 90.degree., the number of turns per circuit can be
increased.
[0025] According to such arrangement, the present invention enables
to dispose a parallel coil having a large number of total turns
within a limited space.
[0026] The present invention provides a plasma processing apparatus
comprising a processing chamber for subjecting an object to plasma
processing; an inlet means for introducing gases for plasma
processing into the processing chamber; an evacuation means for
evacuating an interior of the processing chamber; a sample stage
for placing the object to be processed; a power supply means for
generating plasma in the processing chamber; and at least one
induction coil connected to the power supply means, wherein the
induction coil is formed by connecting a plurality of identical
coil elements in a parallel circuit-like arrangement, the induction
coil being positioned so that its center corresponds to a center of
the object, and wherein input ends of the coil elements are
arranged at equal angular intervals calculated by dividing
360.degree. by the number of coil elements, the coil elements
having a three-dimensional structure in a radial direction and a
height direction along a surface of an annular ring with an
arbitrary cross-sectional shape.
[0027] According to the above plasma processing apparatus, the
annular ring is an insulating member, and conductor portions of the
coil elements are formed on the surface of the insulating member.
Moreover, a refrigerant passage is formed to the insulating member
for cooling. Even further, the cross-sectional shape of the
insulating member is polygonal, and the conductor portions of the
coil elements are formed on the surface of the polygonal surface of
the insulating member.
[0028] According to the present plasma processing apparatus, the
cross-sectional shape of the insulating member is circular, and the
conductor portions of the coil elements are formed on the surface
of the insulating member in a toroidal coil-like shape.
[0029] According to the present plasma processing apparatus, the
annular ring is a virtual annular ring, and conductor portions of
the coil elements are formed along a surface of the virtual annular
ring.
[0030] In order to solve the conventional problems, the present
invention provides a plasma processing apparatus comprising: a
processing chamber for subjecting an object to plasma processing;
an inlet means for introducing a gas for plasma processing into the
processing chamber; an evacuation means for evacuating an interior
of the processing chamber; a sample stage for placing the object; a
power supply means for generating plasma in the processing chamber;
and at least one induction coil connected to the power supply
means, wherein the induction coil is formed by connecting a
plurality of identical coil elements in a parallel circuit-like
arrangement, the coil elements disposed on a surface of an annular
ring having an arbitrary cross-sectional shape and formed to rotate
along the surface of the annular ring.
[0031] According to the present plasma processing apparatus, the
annular ring is an insulating member, and conductor portions of the
coil elements are formed on the surface of the insulating member.
Further according to the present invention, a refrigerant passage
is formed to the insulating member for cooling, and further, the
cross-sectional shape of the insulating member is polygonal, and
the conductor portions of the coil elements are formed on the
surface of the polygonal surface of the insulating member.
[0032] According to the present plasma processing apparatus, the
cross-sectional shape of the insulating member is circular, and the
conductor portions of the coil elements are formed on the surface
of the insulating member in a toroidal coil-like shape.
[0033] According to the present plasma processing apparatus, the
annular ring is a virtual annular ring, and conductor portions of
the coil elements are formed along a surface of the virtual annular
ring.
[0034] According to the present plasma processing apparatus, the
coil elements are rotated for a predetermined angle at a time in a
circumferential direction of the annular ring, by which the coil
elements are rotated at a time from one face of the annular ring to
a face adjacent thereto. According to another aspect of the
invention, the coil elements are rotated continuously.
[0035] Furthermore, according to the present plasma processing
apparatus, the induction coil is formed so that input ends or
output ends of the plural coil elements are disposed at
predetermined even angular intervals in the circumferential
direction of the annular ring.
[0036] According to the present plasma processing apparatus, the
annular ring is arranged so that a center thereof corresponds to
the center of the object. Moreover, according to the present
invention, plural induction coils are arranged concentrically.
[0037] According to such configurations, it is possible to dispose
a parallel coil having a large number of total turns in a limited
space.
[0038] According to the present plasma processing apparatus,
complete plasma uniformity across the circumferential direction can
be achieved. Therefore, the plasma etch result is uniform in the
circumferential direction, and since it is necessary only to
consider the uniformity in the radial direction when determining
plasma etching process conditions, the determination process is
facilitated and prompt. As a result, the plasma processing
performance and the controllability of the apparatus as a whole is
enhanced, and it becomes possible to provide finer etching process
with high throughput, and higher quality film deposition and
surface treatment.
BRIEF DESCRIPTION OF THE DRAWINGS
[0039] FIG. 1 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a first
embodiment of the present invention;
[0040] FIG. 2 is an explanatory view showing a shape of a coil
element of an induction coil used in a plasma etching
apparatus;
[0041] FIG. 3 is an explanatory view showing a modified example of
an induction coil;
[0042] FIG. 4 is an explanatory view showing the connection of an
induction coil according to the present invention;
[0043] FIG. 5 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a second
embodiment of the present invention;
[0044] FIG. 6 is a perspective view showing the arrangement of coil
elements of an induction coil corresponding to a third embodiment
of the present invention;
[0045] FIG. 7 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a fourth
embodiment of the present invention;
[0046] FIG. 8 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a fifth
embodiment of the present invention;
[0047] FIG. 9 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a sixth
embodiment of the present invention;
[0048] FIG. 10 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a seventh
embodiment of the present invention;
[0049] FIG. 11 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to an eighth
embodiment of the present invention;
[0050] FIG. 12 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a ninth
embodiment of the present invention;
[0051] FIG. 13 is an explanatory view showing how the coil element
of the induction coil is disposed according to the ninth embodiment
of the present invention; and
[0052] FIG. 14 is an explanatory view showing the arrangement of
coil elements of an induction coil corresponding to a tenth
embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
[0053] The plasma processing apparatus according to the present
invention is not only applied to the field of manufacturing
semiconductor devices, but can also be applied to various fields
concerning plasma processing, such as the manufacturing of liquid
crystal displays, forming of films using various materials and
providing surface treatments. In this description, a plasma etching
apparatus for manufacturing semiconductor devices is described as
an example to illustrate the preferred embodiments.
[0054] With reference to FIG. 1, an arrangement corresponding to a
first embodiment of a plasma processing apparatus according to the
present invention will be described. An RF inductively coupled
plasma processing apparatus comprises a processing chamber 1
maintained in vacuum, an evacuation means 2 connected to a vacuum
pump for example for maintaining the interior of the processing
chamber in vacuum, a wafer-transfer system 4 for carrying a
semiconductor wafer 3 or object to be processed into and out of the
vacuum processing chamber, an inlet 5 for introducing processing
gas, an electrode 6 on which the semiconductor wafer 3 is placed
(sample stage for mounting the object to be processed), a matching
network 7, an RF power supply 8, an insulator 9 functioning as the
ceiling of the processing chamber and through which the electric
field created by radio frequency is introduced to the processing
chamber, an RF induction coil 10 having an arrangement unique to
the present invention, an annular insulating body (insulating
member ) 11, a matching network 12 and an RF power supply 13.
[0055] The processing chamber 1 is a vacuum vessel made of
stainless steel or aluminum with an anodized aluminum surface,
which is grounded electrically. The processing chamber 1 is
equipped with an evacuation means 2, and a wafer-transfer system 4
for carrying the semiconductor wafer 3 which is the object to be
processed into and out of the chamber. Inside the processing
chamber 1 is disposed an electrode 6 for placing the semiconductor
wafer 3. The wafer carried into the processing chamber via the
wafer-transfer system 4 is placed on the electrode 6 and held by
the electrode 6. The electrode 6 is connected to an RF power supply
8 through a matching network 7 for the purpose of controlling the
ion energy incident on the semiconductor wafer 3 during plasma
processing. An etching gas is introduced into the chamber through
an inlet 5.
[0056] An RF induction coil 10 is disposed in a position
confronting the wafer via an insulator 9 formed of quartz or
alumina ceramics, on a plane facing the wafer in the atmospheric
side of the insulator 9. The RF induction coil 10 is arranged so
that its center corresponds to the center of the semiconductor
wafer 3. Although not shown, the RF induction coil 10 is composed
of plural identical coil elements, and the conducting areas of the
coil elements are disposed on a surface of a substantially annular
(ring-like) insulating member 11. One end of each of the plural
coil elements is connected to the RF power supply 13 via a matching
network 12, and the other end is connected to ground potential, in
the exact same manner. Although not shown, it is possible to insert
a capacitor between the coil elements and the ground potential.
When such capacitor is inserted, the distribution of the potential
generated in the induction coil is varied, so by adopting an
appropriate capacitor, the maximum voltage generated in the coil
can be reduced.
[0057] The insulating member 11 has a refrigerant passage not shown
for cooling, and a fluid such as water, Fluorinert (registered
trademark), air or nitrogen can be flown through the passage to
cool the insulating member.
[0058] An inductively coupled plasma apparatus excites plasma by
the RF current applied through the RF induction coil. Generally,
when the number of turns (number of windings) is increased, the
inductance is increased and the current is reduced but the voltage
is raised. When the number of turns is reduced, the voltage is
lowered but the current is raised. In designing the inductively
coupled plasma apparatus, the preferable levels of current and
voltage are determined not only from the viewpoint of uniformity,
stability and generation efficiency of plasma but also from the
viewpoint of mechanical engineering. For instance, the increase of
current may cause problems such as heating and the loss caused
thereby, or the current resistance of a variable capacitor used in
the matching network. On the other hand, the increase of voltage
may cause problems such as abnormal discharge, undesirable affect
to plasma, or the voltage resistance of the variable capacitor.
Therefore, the designer must determine the shape of the coil and
the number of turns thereof considering the current and voltage
resistance of electric elements such as variable capacitors in the
matching network, and the problems related to cooling the
coils.
[0059] Now, we will consider a simple loop coil like the one shown
in FIG. 2. We will assume that the inductance of this loop coil is
1.mu.H. If plasma is generated using this loop coil as described
earlier, the plasma will be biased by the effect of input and
output terminals disposed at the neck of the coil. Next, we will
consider a loop coil similar to the loop coil of FIG. 2 but is
somewhat helically expanded as illustrated in FIG. 3. Since the
overall diameter of the coil is substantially the same, the
inductance of the loop coil of FIG. 3 is also approximately 1
.mu.H.
[0060] When four such-loop coils are prepared and arranged at
90.degree. equal angular intervals, an arrangement as illustrated
in FIG. 4 is provided. If the four coil ends disposed at the center
are gathered as one input terminal and connected to the RF power
supply, and the four outer coil terminals functioning as output
terminals are set to ground potential, the arrangement functions as
an induction coil. The use of such coil may cause plasma to be
somewhat distorted, but will not cause the plasma to be biased.
Theoretically, the shape of the plasma will approximate a true
circle by increasing the number of coil elements to more than four,
but since this causes complication, two to four coil elements are
often used in actual application. If four coils each having an
inductance of 1 .mu.H are totally independently connected in
parallel, the inductance will be 1/4 or 0.25 .mu.H, but in the
arrangement illustrated in FIG. 4, mutual induction is caused by
the adjacent coils, so the inductance will not be reduced to 1/4.
Non-patent document 2 discloses a plasma apparatus having four coil
circuits disposed at 90.degree. intervals, similar to the
arrangement of FIG. 4. The same document discloses that by
connecting four coil circuits of the same shape in parallel, the
inductance is reduced to 57% that of a single coil circuit. The
voltage E applied to the coil is provided by equation
E=I.multidot.Z, in which I represents the current of the coil and Z
represents impedance. According to equation Z=2.pi.f.multidot.L in
which f represents the power supply frequency, the reduction of
inductance causes the voltage generated in the coil to be reduced
and the current to be increased when the same power is
supplied.
[0061] Now, we will assume that an induction coil is designed so
that the inductance of the induction coil is set to a certain value
(for example, 1 .mu.H) from the viewpoint of current and voltage
resistance of the matching network. By adopting an induction coil
having an inductance of 1 .mu.H with a single turn, such as the
ones shown in FIGS. 2 and 3, the total number of turns of the coil
is, of course, one. On the other hand, by arranging four turns of
coils, each turn being 90.degree., that are electrically mutually
connected in parallel so as to uniformize the plasma in the
circumferential direction, the inductance is 0.57 .mu.H and the
total number of turns is four. This inductance is too low, so in
order to realize 1 .mu.H inductance with four parallel coil
circuits, it is assumed that coils having approximately 1.5 turns
(estimate) per circuit are required. In other words, it is
understood that by adopting the parallel coil arrangement
illustrated in FIG. 4, the total number of turns of the coil must
be increased significantly in order to achieve the same inductance
as that of the single coil. In order to achieve the same inductance
as that of one turn of a single coil by the arrangement having four
circuits of coils connected in parallel, a total of six turns of
coils must be provided, each coil circuit having 1.5 turns.
[0062] The present invention discloses an advantageous induction
coil structure regarding the parallel coil arrangement with a large
number of turns. At first, as illustrated in FIG. 5 (embodiment 2),
a ring-like insulating member with a quadrangle cross section
(insulating ring) 11 is prepared. The inner plane of the insulating
ring 11 is defined as plane a, the bottom plane as plane b, the
outer plane as plane c and the top plane as plane d. Further, the
insulating ring 11 is divided at 90.degree. intervals into four
zones, and each zone is defined as zone A, zone B, zone C and zone
D, respectively as shown in FIG. 5. In the embodiment of FIG. 5,
four circuits of coil elements 101 are used. A coil element 101-1
of circuit 1 starts at input terminal 101-1in, passes plane a in
zone A, and thereafter, passes planes b and c to reach an output
terminal 101-1out, according to which a loop of 270.degree. (3/4
turn) in total is formed.
[0063] As shown in table 1, the coil element of circuit 2 is
displaced by 90.degree. in the clockwise direction from the first
coil circuit, and starts at an input terminal and passes plane a in
zone B, plane b in zone C and plane c in zone D to form a total of
3/4 turn. A coil element 101-3 of circuit 3 and a coil element
101-4 of circuit 4 are each displaced by 90.degree. in the
clockwise direction from the preceding circuit.
1TABLE 1 Planes used: 3, 3/4-turn circuits: 4, total turns: 3 Zone
A Zone B Zone C Zone D Circuit 1 plane a plane b plane c Circuit 2
plane a plane b plane c Circuit 3 plane c plane a plane b Circuit 4
plane b plane c plane a
[0064] In this example, four circuits of 3/4-turn coil elements are
used, totaling in three turns. FIG. 6 is a perspective view showing
the actual coil formed in this manner (embodiment 3). Unlike the
example shown in FIG. 4 where the coil elements are disposed
flatly, the present embodiment utilizes space advantageously and
successfully creates a compact induction coil 10. By adopting this
induction coil to the plasma processing apparatus illustrated in
FIG. 1, it is possible to provide a plasma processing apparatus
having advantageous circumferential plasma uniformity.
[0065] In the example of Table 1, each coil element is passed via
adjacent planes, from plane a to plane b to plane c, but it is also
possible to have the coil pass via plane a to plane c and then to
plane b, as shown in Table 2. It may seem irrational to pass the
coil from plane a directly to plane c, but since these planes are
in confronting relations, the coil can be passed through a bore
pierced through the insulating ring 11.
2TABLE 2 Planes used: 3, 3/4-turn circuits: 4 (90.degree. each),
total turns: 3 Zone A Zone B Zone C Zone D Circuit 1 plane a plane
c plane b Circuit 2 plane a plane c plane b Circuit 3 plane b plane
a plane c Circuit 4 plane c plane b plane a
[0066] Further, by utilizing plane d in addition to planes a, b and
c for arranging the coil elements, an example illustrated in FIG. 7
(embodiment 4) and table 3 is achieved, in which circuit 1 is
started at input terminal 101-1in and extends via plane a, plane b,
plane c and plane d and terminates at output terminal 101-1out, and
circuits 2, 3 and 4 are disposed in a similar manner but displaced
by 90.degree., respectively, according to which an induction coil
with a total of four turns using four circuits (one turn per
circuit) is formed (which is considered to be substantially similar
to the example of FIG. 4).
3TABLE 3 Planes used: 4, 1-turn circuits: 4, total turns: 4 Zone A
Zone B Zone C Zone D Circuit 1 plane a plane b plane c plane d
Circuit 2 plane d plane a plane b plane c Circuit 3 plane c plane d
plane a plane b Circuit 4 plane b plane c plane d plane a
[0067] Next, an embodiment with increased number of turns is
illustrated with reference to FIG. 8 (embodiment 5) and table 4.
According to the previous embodiments, each plane had a 90-degree
loop per circuit arranged thereto, but according to the present
embodiment, a plane has two 180.degree. loop circuits, and a single
circuit uses three planes to turn 540.degree., according to which
the number of turns is increased. In other words, a coil element
101-1 of circuit 1 is disposed on plane a in zones A and B, plane b
in zones C and D, and plane c in zones A and B, transferring from
one plane to another after forming 180.degree. loops. However, in
this example, there are four coil circuits, so one plane must be
shared by adjacent loops. That is, as illustrated in FIG. 8 and
table 4, the coil element 101-1 of circuit 1 shares planes a and c
with coil circuit element 2 in zone B, shares plane b with coil
circuit element 4 in zone C, shares plane b with circuit 2 in zone
D, and shares planes a and c with circuit 4 in zone A, each sharing
90.degree.. In this embodiment, since three planes are used and
each coil circuit has {fraction (3/2)} turns, the total number of
turns of the coils is six.
4TABLE 4 Planes used: 3, {fraction (3/2)}-turn circuits: 4, total
turns: 6 Zone A Zone B Zone C Zone D Zone A Zone B Zone C Zone D
Circuit 1 plane a plane a plane b plane b plane c plane c Circuit 2
plane a plane a plane b plane b plane c plane c Circuit 3 plane a
plane a plane b plane b plane c plane c Circuit 4 plane c plane a
plane a plane b plane b plane c
[0068] Furthermore, FIG. 9 (embodiment 6) and table 5 are referred
to in explaining a modified example of FIG. 8. This embodiment
forms the 180.degree. loop to only a certain plane. For example,
the 180.degree. loop is disposed only on plane b and 90.degree.
loops are disposed on planes a and c. Thus, circuit 1 shares plane
b with circuit 4 in zone B and with circuit 2 in zone C, each for
90.degree.. As for planes a and c, each zone is used independently
by each circuit. Since the coupling property of the induction coil
to plasma is higher when the coil is closer to the plasma, in a
plasma apparatus of the type shown in FIG. 1, it is advantageous to
use plane b (bottom plane) to dispose longer coil loops (or to
arrange grater number of coil turns on plane b). According to the
present embodiment, three planes are used to dispose four
single-turn circuits, so there are four turns in total.
5TABLE 5 Planes used: 3, 1-turn circuits: 4, total turns: 4 Zone A
Zone B Zone C Zone D Circuit 1 plane a plane b plane b plane c
Circuit 2 plane c plane a plane b plane b Circuit 3 plane b plane c
plane a plane b Circuit 4 plane b plane b plane c plane a
[0069] In order to increase the number of turns, it may be possible
to use an insulating ring 11 having a polygonal cross-section with
more than four sides. This embodiment 7 will be illustrated with
reference to FIG. 10 and table 6. The present embodiment uses an
insulating ring 11 with an octagonal cross-section. The surfaces
are denoted as planes a through h as illustrated, and through use
of seven planes excluding the upper plane, plane h, coil loops are
arranged in a manner similar to the embodiment of FIG. 5, wherein
the coil element of circuit 1 is first disposed on plane a in zone
A and extended via planes b, c, d, e, f and g transiting planes
every 90.degree., and the coil element of circuit 2 is first
disposed on plane a in zone B and extended via planes b, c, d, e, f
and g transiting planes every 90.degree., thereby forming loops. A
single coil element circuit constitutes {fraction (7/4)} turns, so
by disposing four circuits, the induction coil totals in seven
turns.
6TABLE 6 Planes used: 7, {fraction (7/4)}-turn circuits: 4
(90.degree. each), total turns: 7 Zone A Zone B Zone C Zone D Zone
A Zone B Zone C Zone D Circuit 1 plane a plane b plane c plane d
plane e plane f plane g Circuit 2 plane a plane b plane c plane d
plane e plane f plane g Circuit 3 plane g plane a plane b plane c
plane d plane e plane f Circuit 4 plane f plane g plane a plane b
plane c plane d plane e
[0070] The embodiments up to now have illustrated various induction
coils formed of four coil element circuits connected in parallel,
but the number of coils can be, of course, two, three, or more than
four.
[0071] FIG. 11 and table 7 illustrate embodiment 8 in which three
coil element circuits are used. According to the present
embodiment, one coil element is disposed to transfer from plane a
to plane b and then to plane c forming 120.degree. loops on each
plane. A single coil element circuit forms a single turn, so by
disposing three coil circuits, an induction coil having three turns
in total is provided.
7TABLE 7 Planes used: 3, 1-turn circuits: 3 (120.degree. each),
total turns: 3 Zone A Zone B Zone C Circuit 1 plane a plane b plane
c Circuit 2 plane c plane a plane b Circuit 3 plane b plane c plane
a
[0072] In forming an induction coil, it is advantageous to use an
insulating ring 11 having a polygonal cross-section. The coil
elements can be formed of copper sheets or the like, and can be
secured via screws onto the insulating ring 11 to maintain shape.
It is also possible to form coil elements 101 by depositing plating
on the surface of the insulating ring 11 and forming the coil
pattern via etching or the like. There is much heat generated in
the induction coil since a large amount of current is passed
through. If the insulation coil is formed of a single continuous
spiral coil with a simple structure, it is possible to cool the
coil by forming a refrigerant passage in the coil, for example.
However, if the insulating coil is formed of parallel-connection
coil elements with complicated structure, it is difficult to form a
refrigerant passage in the interior of the coil to cool the same.
Advantageously according to the present invention, the entire
complex coil arrangement can be cooled effectively by simply
circulating a refrigerant in the interior of the insulating ring
11.
[0073] According to the above description, coil loops of given
angles were disposed on the planes of the insulating ring 11 having
a polygonal cross-section. However, it is possible to form the
insulating ring 11 to have a round cross-section, which is an
ultimate polygon. According to such example, however, it is not
possible to denote the planes as plane a, plane b and so on as in
the case of previous embodiments. Therefore, as illustrated in
FIGS. 12 and 13 (embodiment 9), the coil elements 101 can be
arranged in the form of a toroidal coil in which each coil is
displaced from the other coil by given angles. According to this
example, the coil element 101 runs smoothly on the surface of the
annular ring and disposed in a three-dimensional fashion.
[0074] The induction coil can be formed compactly according to the
present invention, so it is possible to facilitate the control of
plasma distribution, for example, by disposing two induction coils
10A and 10B where one is disposed concentrically outward of the
other, and by controlling the current ratio supplied thereto.
[0075] The present invention does not necessarily require the
insulating ring 11, and as long as the shape of the induction coil
is maintained, it is possible to omit the insulating ring and to
dispose the coil elements on a surface of a virtual annular
ring.
* * * * *