U.S. patent application number 11/075324 was filed with the patent office on 2005-08-04 for recycling of a wafer comprising a multi-layer structure after taking-off a thin layer.
Invention is credited to Akatsu, Takeshi, Aulnette, Cecile, Ghyselen, Bruno, Le Vaillant, Yves Mathieu, Osternaud, Benedite.
Application Number | 20050167002 11/075324 |
Document ID | / |
Family ID | 32715106 |
Filed Date | 2005-08-04 |
United States Patent
Application |
20050167002 |
Kind Code |
A1 |
Ghyselen, Bruno ; et
al. |
August 4, 2005 |
Recycling of a wafer comprising a multi-layer structure after
taking-off a thin layer
Abstract
The invention relates to a substrate that includes a multi-layer
structure on the surface of a donor wafer that has a thickness
sufficient to form multiple useful layers for subsequent
detachment. The layers may be formed of materials having
sufficiently different properties such that they may be selectively
removed. The layers of material may also include sub-layers that
can be selectively removed from each other.
Inventors: |
Ghyselen, Bruno;
(Seyssinet-Pariset, FR) ; Aulnette, Cecile;
(Grenoble, FR) ; Osternaud, Benedite; (St. Laurent
du Pont, FR) ; Akatsu, Takeshi; (Saint Nazaire Les
Eymes, FR) ; Le Vaillant, Yves Mathieu; (Crolles,
FR) |
Correspondence
Address: |
WINSTON & STRAWN LLP
1700 K STREET, N.W.
WASHINGTON
DC
20006
US
|
Family ID: |
32715106 |
Appl. No.: |
11/075324 |
Filed: |
March 7, 2005 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
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11075324 |
Mar 7, 2005 |
|
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PCT/IB04/00311 |
Jan 7, 2004 |
|
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60472435 |
May 22, 2003 |
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Current U.S.
Class: |
148/33 ;
257/E21.568; 257/E21.57; 438/458 |
Current CPC
Class: |
H01L 21/76259 20130101;
H01L 21/02032 20130101; H01L 21/76254 20130101 |
Class at
Publication: |
148/033 ;
438/458 |
International
Class: |
H01L 029/00; H01L
021/00; H01L 021/84; H01L 021/46 |
Foreign Application Data
Date |
Code |
Application Number |
Jan 7, 2003 |
FR |
0300099 |
Claims
What is claimed is:
1. A recyclable donor wafer comprising a substrate and a
multi-layer structure on the substrate, the multi-layer structure
having sufficient thickness to form (a) at least two useful layers
that can be detached, and (b) additional material that can be
removed to planarize exposed surfaces of the useful layers prior to
detachment from the donor wafer, with the useful layers being
formed of at least one of SiGe, Si, an alloy belonging to Group
III-V, and with the substrate having a composition chosen from
among possible combinations of (Al, Ga, In) or (N, P, As).
2. The donor wafer of claim 1, wherein the at least two useful
layers are formed of materials having sufficiently different
properties such that one layer may be selectively removed while at
least one other layer remains intact.
3. The donor wafer of claim 1, wherein a first layer of the
multi-layer structure is formed of a material having a lattice
parameter different from the lattice parameter of the adjacent
layers, and is sufficiently thin such that the first layer may be
elastically strained to have a lattice parameter similar to the
lattice parameter of the adjacent layers, so that the first layer
does not disturb the crystallographic structure of the adjacent
layers.
4. The donor wafer of claim 1, wherein at least one layer may be
selectively removed by chemical etching.
5. The donor wafer of claim 4, wherein at least one additional
layer may be selectively removed mechanically.
6. The donor wafer of claim 1, further comprising a buffer
structure that includes a support structure and a buffer layer
between the support structure and the multi-layer structure.
7. The donor wafer of claim 6, wherein the buffer layer comprises a
semiconductor material of constant chemical composition having a
lattice misfit with the support substrate, with the buffer layer
having crystallographic defects in order to relax elastic stresses
in the multi-layer structure.
8. The donor wafer of claim 6, wherein the buffer layer is formed
of one or more of Si, SiGe, Ge or a nitride material.
9. The donor wafer of claim 8, wherein the multi-layer structure
comprises one or more of elastically strained Si, SiGe or Ge.
10. The donor wafer of claim 6, wherein the buffer layer has a
lattice parameter progressing substantially in thickness between a
lattice parameter of the support substrate and another lattice
parameter substantially different from that of the support
substrate.
11. The donor wafer of claim 8, wherein the buffer structure
further comprises an additional layer having one or more of a
sufficient thickness to confine defects or a surface lattice
parameter different from that of the support substrate.
12. The donor wafer of claim 6, wherein the buffer structure is
formed of a binary, ternary, quaternary, or higher degree atomic
alloy belonging to one atomic alloy Group V-V, Group III-V, or
Group II-VI.
13. The donor wafer of claim 6, wherein the donor wafer comprises
one of the following: (A) a support substrate of Si and a buffer
structure comprising a buffer layer of SiGe having a Ge
concentration which increases in thickness and an additional layer
of SiGe that is relaxed by the buffer layer; (B) a support
substrate of Si and a buffer structure comprising a buffer layer of
SiGe having with a Ge concentration which increases in thickness
between about 0% and about 100% and an additional layer of SiGe
that is relaxed by the buffer layer, having a Si concentration of
about 0%; (C) a relatively thick layer of Si; (D) a support
substrate comprising AsGa in contact with the buffer structure, the
buffer structure comprising a buffer layer having an atomic alloy
of ternary or higher degree, belonging to Group III-V, and having a
composition which chosen from among the possible combinations of
(Al, Ga, In), (N, P, As), and at least two elements chosen from
Group III or V, these two latter elements having a concentration
evolving gradually in the thickness of the buffer layer; (E) the
buffer structure of (D) which further comprises, near its interface
with the support substrate, a lattice parameter that is close to
that of InP; (F) a support substrate of sapphire, SiC, or Si, with
a buffer structure comprising a buffer layer of AixGa1-xN, with x
varying from 0 to 1 starting from the interface with the support
substrate, optionally including an additional layer of GaN; or (G)
a support substrate of sapphire, SiC, or Si, a mask and a buffer
layer of GaN, optionally with another layer of GaN between the mask
and support substrate.
14. The donor wafer of claim 13, wherein the useful layers to be
detached comprise Si or elastically stressed Si; Ge or elastically
stressed Gei, SiGe and Ge; AsGa and Ge; an alloy belonging to Group
III-V; GaAs, InP; InGaAs; AlN, InN, or GaN.
15. The donor wafer of claim 1, wherein the multi-layer structure
comprises one of the following: (A) two layers of almost
elastically relaxed SiGe, and an intermediate layer between the
SiGe layers comprising: Si elastically strained to have a lattice
parameter similar to the lattice parameter of the adjacent SiGe
layers; SiGe with a Ge concentration substantially different from
the Ge concentrations in each of the two adjacent layers, and being
elastically strained to have a lattice parameter similar to the
lattice parameter of the adjacent layers; doped Si; or doped SiGe;
wherein at least one of the layers has properties sufficiently
different from the other layers to permit selective chemical
etching of the adjacent layer; (B) two layers of GaAs, and an
intermediate layer of AlGaAs intermediate between the GaAs layers,
wherein at least one of the layers has properties sufficiently
different from the other layers to permit selective chemical
etching of the adjacent layer; (C) two layers of substantially
elastically relaxed Si, and an intermediate layer between the Si
layers comprising SiGe elastically strained to have a lattice
parameter similar to the lattice parameter of the adjacent Si
layers, doped Si, or doped SiGe; wherein at least one of the layers
has properties sufficiently different from the other layers to
permit selective chemical etching of the adjacent layer; (D) two
layers of InP, and an intermediate layer of InGaAsP between the two
layers of InP, wherein at least one of the layers has properties
sufficiently different from the other layers to permit selective
chemical etching of the adjacent layer; (E) an intermediate layer
of InN between a AlN layer and a GaN layer; or (F) an intermediate
layer of InN between two layers of GaN.
16. The donor wafer of claim 1, wherein at least one layer that
includes up to about 5% carbon.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a continuation of International
Application PCT/IB2004/000311 filed Jan. 7, 2004, and claims the
benefit of provisional application 60/472,435 filed May 22, 2003,
the entire content of each of which is expressly incorporated
herein by reference thereto.
FIELD OF INVENTION
[0002] This invention relates to recycling of a donor wafer after
taking off a layer of semiconductor material. This recycling
includes removal of material involving a portion of the donor wafer
on the surface where the useful layer was taken off.
BACKGROUND OF THE INVENTION
[0003] Before taking off the useful layer, the donor wafer
comprises a substrate and a useful layer that is to be taken off or
transferred from the substrate. The useful layer is typically
obtained by epitaxially depositing the layer on the substrate.
[0004] After removal, the useful layer is integrated with a
structure in which components will be formed, particularly in the
fields of microelectronics, optics, or optoelectronics, for the
most part.
[0005] The layer to be taken off must have a high level of quality
determined according to one or more specific criteria. The quality
of the layer to be taken off largely depends on the growth support,
that is, on the quality of the substrate on which it is epitaxially
deposited.
[0006] The formation of such a high quality substrate is often
complex and requires particular attention, involving technical
difficulty and a higher cost. The cost is further increased when
considering the removal of a layer of a composite semiconductor
material such as an alloy. In this situation, the epitaxy substrate
also must exhibit a structure which is often difficult and costly
to implement. Thus, substrates can be provided with a buffer layer
to specifically avoid such difficulties of implementation.
[0007] The term "buffer layer" refers to a transition layer between
a first crystalline structure, such as a support substrate, and a
second crystalline structure. The second structure modifies the
structural or stoichiometric properties of the material or a
surface atomic recombination. Buffer layers permit the support
structure to include a second crystalline structure having a
lattice parameter that differs substantially from that of the
support substrate.
[0008] A first technique of forming a buffer layer includes growing
successive layers so as to form a structure having a composition
varying gradually in thickness, the gradual variation of components
of the buffer layer then being directly associated with a gradual
variation of its lattice parameter. A layer, or superposed layers,
formed on the buffer layer can be taken off from the donor wafer,
and transferred to a receiving substrate so as to form a
well-defined structure.
[0009] One of the main applications of a transfer of thin layers
formed on a buffer layer concerns the formation of layers of
elastically stressed silicon, and especially, in the case where the
silicon is stressed in tension, because certain properties, such as
electron mobility in the material, are distinctly improved. Other
materials, such as SiGe, can also be the subject of a substantially
analogous taking-off or transferring procedures.
[0010] A transfer of such layers onto a receiving substrate,
specifically by a method termed SMART-CUT.RTM. that is known to
those of skill in the art, then permits structures to be formed
such as SeOI (Semiconductor On Insulator) structures.
[0011] For example, after taking-off an elastically relaxed layer
of SiGe, the structure obtained, including the taken-off useful
layer, can then serve as a growth support for silicon which will be
placed under tension by the layer of relaxed SiGe. As an
illustration, an example of such a method is described in the IBM
document of L. J. Huang et al., ("SiGe-On-Insulator prepared by
wafer bonding and layer transfer for high-performance field-effect
transistors", Applied Physics Letters, 26, Feb. 2001, Vol. 78, No.
9) in which a process is given for forming a Si/SGOI structure.
[0012] Other applications of growth on a buffer layer are possible,
particularly with Group III-V semiconductors. Transistors are
commonly formed in technologies based on GaAs or based on InP. In
terms of electronic performance, InP has an appreciable advantage
over GaAs. For the main reasons of cost and feasibility, the chosen
technique includes transferring to a receiving substrate a
taken-off useful layer of InP obtained by growth on a buffer layer
on a support substrate of GaAs.
[0013] Certain taking-off methods, such as an "etch-back" type
method, include destruction of the remaining portion of the support
substrate and of the buffer layer during taking-off. In certain
other methods of taking-off, the support substrate is recycled, but
the buffer layer is lost.
[0014] The technique of formation of a buffer layer is complex.
Moreover, to minimize its density of crystallographic defects, the
thickness of a buffer layer is generally considerable, typically
between one and several micrometers. The production of such a
buffer layer leads to an often long, difficult, and costly
implementation.
[0015] A second technique of production of a buffer layer is
disclosed in WO 00/15885, which has as its main object to
elastically relax a layer of Ge that is stressed by a Ge buffer
layer. This technique is based on specific epitaxy conditions,
associating the parameters of temperature, time, and chemical
composition. The main advantage of this technique is that it is
simpler, shorter, and less costly to perform. The buffer layer
finally obtained is not as thick as a buffer layer formed according
to the first technique.
[0016] A third technique of formation of a buffer layer is
disclosed by B. Hollander et al., "Strain relaxation of
pseudomorphic Si.sub.1-xGe.sub.x/Si(100) heterostructures after
hydrogen or helium ion implantation for virtual substrate
fabrication" (in Nuclear and Instruments and Methods in Physics
Research B 175-177 (2001)357-367). It includes relaxing elastic
stresses in the layer to be taken off by deep hydrogen or helium
implantation. This third technique can give a result close to a
buffer layer produced according to one of the two previous
techniques with substantially less demands of implementation.
[0017] The method describes a relaxation of a SiGe layer stressed
in compression, this layer being formed on a Si substrate. The
technique used includes implantation of hydrogen or helium ions
through the surface of the stressed layer in the Si substrate to a
given depth, generating perturbations in the thickness of Si above
the implanted zone (this thickness then forms a buffer layer) and
causing, under heat treatment, a certain relaxation of the SiGe
layer. This technique seems to be shorter, easier to practice, and
less costly than the first technique of forming a buffer layer.
[0018] An advantage of using this technique would be to later
integrate this relaxed or pseudo-relaxed layer into a structure for
the fabrication of components, particularly for electronics or
optoelectronics.
[0019] However, similar to the first technique for forming a buffer
layer, a buffer layer made according to one of the last two
techniques is removed using known techniques of recycling of the
donor wafer after taking-off. Technical difficulties of
implementation remain in carrying it out, so that improvement of
the process is needed.
SUMMARY OF THE INVENTION
[0020] The invention relates to a method of transferring useful
layers from a donor wafer which comprises forming a multi-layer
structure on a surface of the donor wafer at a thickness sufficient
to provide multiple useful layers for subsequent detachment;
detaching one layer of the multi-layer structure for transfer as a
first useful layer while leaving behind a remaining portion of the
multi-layer structure; and removing material from the remaining
portion of the formed multi-layer structure to provide a planarized
surface for subsequent detachment of an additional useful layer.
Preferably, the multi-layer structure has sufficient thickness to
form at least three useful layers.
[0021] The useful layers are advantageously formed of materials
having sufficiently different properties such that one layer may be
selectively removed while at least one other layer remains intact.
In one embodiment, the useful layers include pairs of sub-layers,
with each sub-layer having sufficiently different properties from
the other sub-layer in the layer such that one sub-layer may be
selectively removed while at least one other sub-layer remains
intact. A first layer of the multi-layer structure can be formed of
a material having a lattice parameter different from the lattice
parameter of the adjacent layers, and can be sufficiently thin such
that the first layer may be elastically strained to have a lattice
parameter similar to the lattice parameter of the adjacent layers,
so that the first layer does not disturb the crystallographic
structure of the adjacent layer or layers.
[0022] The useful layers can be removed in any one of a variety of
ways. At least one useful layer is generally removed by chemical
etching, such as electrochemical or photo-electrochemical etching.
Additional useful layers can be removed mechanically by a selective
mechanical-chemical planarization. If desired, all useful layers
can be removed mechanically, such as by polishing, optionally
including abrasion or chemical etching. Also, the useful layer can
include a doping element to facilitate selective removal, or the
layers can be made of materials having different porosities. A
convenient selective removal process comprises deoxidation of an
oxide layer.
[0023] A buffer structure can be formed on the donor wafer, wherein
the buffer structure includes a support substrate and a buffer
layer between the support substrate and the multi-layer structure.
This buffer layer may comprise a semiconductor material of constant
chemical composition having a lattice misfit with the support
substrate, with the buffer layer having crystallographic defects in
order to relax elastic stresses in the multi-layer structure. The
buffer layer also may have a lattice parameter progressing
substantially in thickness between a lattice parameter of the
support substrate and another lattice parameter substantially
different from that of the support substrate. Furthermore, the
buffer structure may comprise an additional layer having one or
more of a sufficient thickness to confine defects or a surface
lattice parameter that is different from that of the support
substrate. Generally, the buffer structure is formed of a binary,
ternary, quaternary, or higher degree atomic alloy belonging to
atomic alloy Group IV-V, Group III-V, or Group II-VI.
[0024] The donor wafer may comprise one of the following:
[0025] (A) a support substrate of Si and a buffer structure
comprising a buffer layer of SiGe having a Ge concentration which
increases in thickness and an additional layer of SiGe that is
relaxed by the buffer layer;
[0026] (B) a support substrate of Si and a buffer structure
comprising a buffer layer of SiGe having with a Ge concentration
which increases in thickness between about 0% and about 100% and an
additional layer of SiGe that is relaxed by the buffer layer,
having a Si concentration of about 0%;
[0027] (C) a relatively thick layer of Si;
[0028] (D) a support substrate comprising AsGa in contact with the
buffer structure, the buffer structure comprising a buffer layer
having an atomic alloy of ternary or higher degree, belonging to
Group III-V, and having a composition which chosen from among the
possible combinations of (Al, Ga, In), (N, P, As), and at least two
elements chosen from Group III or V, these two latter elements
having a concentration evolving gradually in the thickness of the
buffer layer;
[0029] (E) the buffer structure of (D) which further comprises,
near its interface with the support substrate, a lattice parameter
that is close to that of InP;
[0030] (F) a support substrate of sapphire, SiC, or Si, with a
buffer structure comprising a buffer layer of Al.sub.xGa.sub.1-xN,
with x varying from 0 to 1 starting from the interface with the
support substrate, optionally including an additional layer of GaN;
or
[0031] (G) a support substrate of sapphire, SiC, or Si, a mask and
a buffer layer of GaN, optionally with another layer of GaN between
the mask and support substrate.
[0032] Preferably, the useful layers to be detached comprise Si or
elastically stressed Si; Ge or elastically stressed Gei, SiGe and
Ge; AsGa and Ge; an alloy belonging to Group III-V; GaAs, InP;
InGaAs; AlN, InN, or GaN. Also, the multi-layer structure
preferably comprises one of the following:
[0033] (A) two layers of almost elastically relaxed SiGe, and an
intermediate layer between the SiGe layers comprising: Si
elastically strained to have a lattice parameter similar to the
lattice parameter of the adjacent SiGe layers; SiGe with a Ge
concentration substantially different from the Ge concentrations in
each of the two adjacent layers, and being elastically strained to
have a lattice parameter similar to the lattice parameter of the
adjacent layers; doped Si; or doped SiGe; wherein at least one of
the layers has properties sufficiently different from the other
layers to permit selective chemical etching of the adjacent
layer;
[0034] (B) two layers of GaAs, and an intermediate layer of AlGaAs
intermediate between the GaAs layers, wherein at least one of the
layers has properties sufficiently different from the other layers
to permit selective chemical etching of the adjacent layer;
[0035] (C) two layers of substantially elastically relaxed Si, and
an intermediate layer between the Si layers comprising SiGe
elastically strained to have a lattice parameter similar to the
lattice parameter of the adjacent Si layers, doped Si, or doped
SiGe; wherein at least one of the layers has properties
sufficiently different from the other layers to permit selective
chemical etching of the adjacent layer;
[0036] (D) two layers of InP, and an intermediate layer of InGaAsP
between the two layers of InP, wherein at least one of the layers
has properties sufficiently different from the other layers to
permit selective chemical etching of the adjacent layer;
[0037] (E) an intermediate layer of InN between a AlN layer and a
GaN layer; or
[0038] (F) an intermediate layer of InN between two layers of
GaN.
[0039] It is also preferable for the donor wafer to include at
least one layer that contains up to about 5% carbon.
[0040] The buffer layer may be formed by epitaxy of a superficial
layer on the support substrate by stabilizing the support substrate
to a predetermined first temperature;
[0041] chemical vapor phase depositing of a base layer at the said
predetermined first temperature to a predetermined thickness that
is less than a desired final thickness; increasing the
predetermined first temperature to a second predetermined
temperature; and chemical vapor phase depositing additional
material at the predetermined second temperature until the desired
final thickness of the superficial layer is obtained. The buffer
layer is that portion of the superficial layer that interfaces with
the support substrate and extends over a thickness for which the
rate of crystallographic defects is greater than a limit value,
with the remaining portion of the superficial layer representing
being at least a portion of the multi-layer structure.
[0042] In one embodiment, the multi-layer structure is completely
formed by epitaxy on the superficial layer. In yet another
embodiment, the buffer layer is formed by forming an elastically
stressed layer on the donor wafer; forming a perturbation zone,
capable of forming structural perturbations, at a given depth; and
supplying energy to bring about an at least relative relaxation of
at least part of the elastically stressed layer, with the relative
relaxation taking place across a region delimited by the
perturbation zone and by the stressed layer, this region also
confining crystallographic defects and representing a buffer
layer.
[0043] The buffer layer can also be formed by an Epitaxially
Laterally Overgrown (ELOG) technique on a support substrate
comprising at the surface a mask in relief according to specific
patterns, the buffer layer being the thickness of the layer
deposited by lateral epitaxy in which defects are confined relative
to the layers deposited by lateral epitaxy thereon and representing
the multi-layer structure. The specific patterns of the mask may be
periodically spaced electrically insulating bands that are
substantially mutually parallel and sufficiently fine to not
perturb the ELOG. In this embodiment, the support substrate may
comprise a solid substrate; an intermediate layer having a lattice
parameter close to the nominal lattice parameter of the material
deposited by ELOG; or the mask.
[0044] The buffer layer may be formed so as to have its lattice
parameter progressing substantially in thickness between the
lattice parameter of the support substrate and another lattice
parameter substantially different from the lattice parameter of the
support substrate. Additionally, the buffer structure may further
comprise an additional layer, and the method further comprises,
before the formation of the multi-layer structure, forming of an
additional layer having a sufficient thickness to confine defects
or a surface lattice parameter that is substantially different from
that of the substrate. Generally, at least one of the layers of the
multiplayer structure is formed by crystalline growth.
[0045] The invention also relates to a recyclable donor wafer
comprising a substrate and a multi-layer structure on the
substrate, with the multi-layer structure having sufficient
thickness to form (a) at least two useful layers that can be
detached, and (b) additional material that can be removed to
planarize exposed surfaces of the useful layers prior to detachment
from the donor wafer, with the useful layers being formed of at
least one of SiGe, Si, an alloy belonging to Group III-V, and with
the substrate having a composition chosen from among possible
combinations of (Al, Ga, In) or (N, P, As). Preferred materials of
the substrate and the multi-layer structure disposed thereon
include those that are described herein.
BRIEF DESCRIPTION OF THE DRAWINGS
[0046] Other aspects, purposes and advantages of this invention
will become clearer upon a review the following detailed
description and examples which is made with reference to the
accompanying drawing figure, in which:
[0047] FIG. 1 shows the different steps in a process according to
the invention that includes taking off a thin layer from a donor
wafer followed by recycling of the donor wafer after taking
off;
[0048] FIG. 2 shows a first donor wafer before taking off according
to the invention;
[0049] FIG. 3 shows the various steps in a process according to the
invention including successively taking off a thin layer starting
from a donor wafer, and recycling the donor wafer after taking off;
and
[0050] FIG. 4 shows a second donor wafer according to the
invention.
DETAILED DESCRIPTION OF THE INVENTION
[0051] The present invention relates to a process of recycling a
donor wafer (10) after taking off a useful layer formed of a
material chosen from among semiconductor materials. The donor wafer
(10) includes a substrate (1) and a multi-layer structure (I), the
multi-layer structure (I) includes the taken-off useful layer. The
process includes removal of material from a portion of the donor
wafer (10) on the side where the taking-off has occurred, while
preserving a portion of the multi-layer structure (I'). The
multi-layer structure is formed to include at least one other
useful layer which can be taken off after recycling, without a
supplementary step of reforming the useful layer.
[0052] The invention also relates to a process of making a donor
wafer that will donate a useful layer by taking-off, and that can
be recycled after taking off using the recycling process. The
process includes forming a multi-layer structure on a substrate for
subsequent transfer of the useful layers of the structure.
[0053] The invention further relates a method of taking-off a
useful layer on a donor wafer to be transferred onto a receiving
substrate. The method includes the generally steps of:
[0054] (a) bonding the donor wafer with the receiving substrate on
the side of the useful layer to be taken off;
[0055] (b) detaching the useful layer included in the multi-layer
structure of the donor wafer; and
[0056] (c) recycling the donor wafer in accordance with the
recycling process.
[0057] The method may be performed cyclically by taking off a
useful layer from a donor wafer, re-forming a useful layer, and
taking off an additional useful layer. The useful layers are used
in a donor wafer that includes a receiving substrate and the useful
layer. The useful layer may be formed of at least one of the
following materials: SiGe, Si, an alloy belonging to the atomic
alloy Groups III-V, and having a composition chosen from among
possible combinations of (Al, Ga, In)--(N, P, As).
[0058] The invention also relates to a donor wafer that donates a
useful layer by taking-off, and recycled or capable of being
recycled by a recycling process. The donor wafer includes a
substrate, a multi-layer structure that supplied the useful layer,
and after taking off, having a sufficient thickness to form at
least one other useful layer that can be taken off.
[0059] The invention relates to recycling a donor wafer. The wafer
includes a multi-layer structure, after taking off at least one
useful layer (in other words the part of the donor wafer that was
taken off) in order to integrate it into a semiconductor structure.
The recycling may be performed such that the remaining part of the
multi-layer structure can once again supply a useful layer in a
subsequent taking off after recycling without implementing a step
to reform the useful layer, such as crystalline growth by epitaxy.
Therefore, recycling must include adapted treatment to not
deteriorate part of the multi-layer structure in which the useful
layer is included, so that this useful layer can still be taken off
after recycling.
[0060] In one embodiment, several useful layers that can be taken
off may be included in the recycled multi-layer structure, so as to
have a sequence of several successive taking off operations between
which a recycling process may be applied.
[0061] With reference to FIGS. 1a, 1b, 2, 2a, 2b, 3 and 4, the
donor wafer 10 includes a substrate 1 and a multi-layer structure
I. The substrate 1 may be formed of a single crystalline material
with the first lattice parameter, or it may be a "pseudo-substrate"
that includes a support substrate and a buffer structure interfaced
with the multi-layer structure I. A "buffer structure" refers to
any structure behaving like a buffer layer.
[0062] Preferably, the structure at the surface has a fairly
relaxed crystallographic structure without a significant number of
structural defects. The buffer layer performs at least one of the
following functions: reduction of the density of defects in the
upper layer or adaptation of a lattice parameter between two
crystallographic structures with different lattice parameters.
[0063] To perform the second function, the area around the
periphery of one of the faces of the buffer layer has a first
lattice parameter almost identical to the lattice parameter of the
support substrate, and the area around the periphery of its other
face has a second lattice parameter almost identical to the lattice
parameter of the layer of the multi-layer structure I directly
adjacent to the buffer structure.
[0064] In one embodiment, the buffer structure includes a single
buffer layer. The buffer layer located on the support substrate has
a lattice parameter on its surface significantly different from the
lattice parameter of the support substrate, so that it has a layer
in the same donor wafer 10 with a lattice parameter different from
the lattice parameter of the support substrate. In some
applications, the buffer layer may prevent the adjacent layer from
containing a high density of defects or from being significantly
strained. In some applications, the buffer layer may also result in
a good surface condition of the adjacent layer.
[0065] According to a first technique for making the buffer
structure, a buffer layer is formed so as to have a lattice
parameter that is globally and progressively modified over a
significant thickness, to form the transition between the two
lattice parameters. This type of layer is usually called a
metamorphic layer. This modification to the lattice parameter may
be made continuously within the thickness of the buffer layer.
[0066] The modification may be done in "stages," each stage being a
thin layer with an almost constant lattice parameter different from
the lattice parameter for the adjacent stage, so as to modify the
lattice parameter discretely stage by stage. The modification may
also have a more complex form, such as a variation of a variable
content composition, an inversion of the sign of the variation of
the content, or discontinuous steps in the composition.
[0067] The variation of the lattice parameter in the buffer layer
is advantageously found by increasing the concentration in the
buffer layer of at least one atomic element that is not included in
the support substrate, progressively starting from the support
substrate. For example, a buffer layer made on a support substrate
of a unitary material, or of a binary, ternary, quaternary, or
higher degree material.
[0068] The buffer layer is preferably made by growth on the support
substrate, for example by epitaxy, using known techniques such as
CVD (Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy)
techniques. In general, the buffer layer may be made by any other
known method in order to obtain a buffer layer composed of an alloy
between different atomic elements. A light finishing step of the
surface of the support substrate subjacent to the buffer layer,
such as by CMP polishing, may be performed before the buffer layer
is produced.
[0069] In another embodiment, the buffer layer made according to
the first technique is included in a buffer structure that includes
a buffer layer (almost identical to the first buffer layer in the
first configuration) and an additional layer. The additional layer
may be between the support substrate and the buffer layer, or on
the buffer layer. This additional layer may form a second buffer
layer, such as a buffer layer to confine defects, and thus improve
the crystalline quality of the multi-layer structure I made on the
buffer structure. This additional layer is made of a
semi-conducting material, which may preferably have a constant
material composition. The composition and thickness chosen for such
an additional layer are particularly important for achieving this
property. Structural defects in an epitaxial layer usually reduce
gradually within the thickness of this layer.
[0070] In another embodiment, the additional layer is located on
the buffer layer and has a constant composition of relaxed material
to fix the second lattice parameter.
[0071] The additional layer may be located on the buffer layer and
have a lattice parameter significantly different from the lattice
parameter of the support substrate. The additional layer may be
formed of a material relaxed by the buffer layer. The additional
layer is advantageously made by growth on the buffer layer, such as
by epitaxy, CVD, or MBE.
[0072] In a first embodiment, the growth of the additional layer is
made in situ, directly continuous with the formation of the
subjacent buffer layer, the subjacent buffer layer in this case
also advantageously being formed by layer growth. In a second
embodiment, the additional layer is grown after a surface finishing
of the subjacent buffer layer, for example by CMP polishing, heat
treatment, or any other smoothing technique.
[0073] A second technique for making the buffer structure is based
on a technique for depositing a surface layer on a support
substrate, this surface layer having a nominal lattice parameter
significantly different from the lattice parameter of the adjacent
material on the surface of the support substrate. The surface layer
deposit is formed so that the deposited layer is nearly free from
plastic defects such as dislocations. A first part of the surface
layer is in contact with the support substrate, that confines
plastic defects such as dislocations and a second part of the
surface layer is relaxed or pseudo-relaxed by the first part, and
has few or no plastic defects.
[0074] The first part of the deposited surface layer acts as a
buffer layer by confining plastic defects so as to preserve the
second part of the surface layer and adapting the lattice parameter
of the surface layer to match the lattice parameter of the
substrate.
[0075] "Confinement" means that most plastic defects are located in
the first part. The second part of the surface layer is not
absolutely free of defects, but the concentration of defects is
compatible with microelectronics applications.
[0076] The deposition technique used to make such a buffer layer
advantageously includes variations of temperatures and chemical
compositions of the deposit with time. Thus, a buffer layer can be
made with a chemical composition that is almost constant throughout
its thickness, unlike a buffer layer made according to the first
technique. One or more layers may be inserted between the buffer
layer and the second part of the surface layer. The thickness of
the buffer layer may be less than the minimum thickness of buffer
layers made according to the first technique. WO 00/15885 discloses
an example of such a buffer layer according to this technique, by
depositing SiGe or Ge on a monocrystalline Si support
substrate.
[0077] For example, this type of deposition process may be used to
deposit of monocrystalline Ge on a monocrystalline Si support
substrate, according to the following steps:
[0078] (A) temperature stabilization of the monocrystalline silicon
support substrate at a first predetermined stabilized temperature
of about 400.degree. C. to 500.degree. C., preferably about
430.degree. C. to 460.degree. C.;
[0079] (B) chemical vapor deposition (CVD) of Ge at the first
determined temperature until a base layer of Ge is obtained on the
support substrate with a predetermined thickness less than a
required final thickness;
[0080] (C) increase in the temperature of the chemical vapor
deposition of Ge from the first predetermined temperature up to a
second predetermined temperature of about 750.degree. C. to
850.degree. C., preferably about 800.degree. C. to 850.degree. C.;
and
[0081] (D) continuation of the chemical vapor deposition of Ge at
the second predetermined temperature until the final required
thickness is obtained for the surface layer of monocrystalline
Ge.
[0082] The buffer layer is the part of the deposited layer that
interfaces with the support substrate and extends over a thickness
in which the crystallographic defects ratio is greater than a
limiting value. In particular, the thickness of this buffer layer
may be on the order of about 0.5 to 1 micron, which is less than
the thickness of a buffer layer made according to the first
technique. The other part of the layer is at least part of the
multi-layer structure I. This type of deposition process may also
be performed by other means, such as that disclosed in WO 00/15885.
The result is production of the substrate 1 of the donor wafer 10,
the substrate 1 including the support substrate and the buffer
layer.
[0083] A third technique for making a buffer structure that is used
on the wafer and that includes the substrate 1 and a layer
deposited on the substrate 1. The material chosen to form this
buffer layer generally has a nominal lattice parameter
significantly different from the lattice parameter of the surface
of substrate 1, so that it has to be elastically strained in
compression or tension by substrate 1.
[0084] The general structure of the strained layer is made of a
strained material, but it may also contain one or several
thicknesses of relaxed or pseudo-relaxed material for which the
accumulated thickness is significantly less than the thickness of
the strained layer, so that the strained layer remains in a
globally strained state. In all cases, the strained layer is
preferably formed on substrate 1 by crystalline growth such as by
epitaxy, and using known techniques, such as the CVD or MBE.
[0085] In order to obtain such a strained layer without too many
crystallographic defects, such as isolated defects, or extensive
defects, such as dislocations, crystalline materials are preferably
chosen to form the substrate 1 and the strained layer (close to its
interface with substrate 1) so that the difference between the
first and second nominal lattice parameters is sufficiently small.
For example, the difference in the lattice parameter is typically
about 0.5% to about 1.5%, but it could be higher.
[0086] For example, in Group IV-IV materials, the nominal lattice
parameter of Ge is about 2.4% greater than the lattice parameter of
Si, and therefore SiGe with 30% of Ge has a nominal lattice
parameter about 11.5% greater than the lattice parameter of Si.
[0087] Preferably, the thickness of the strained layer is almost
constant, so that it has nearly constant intrinsic properties to
facilitate future bonding with the receiving substrate (as shown in
FIGS. 1b or 2b). To prevent relaxation of the strained layer or the
appearance of plastic type internal stresses, the thickness of the
strained layer must also remain less than a critical elastic strain
thickness. This critical elastic strain thickness depends mainly on
the material chosen to form the strained layer and the difference
in the lattice parameter with the substrate 1. Those skilled in the
art will use information known in the art to determine the value of
the critical elastic strain thickness of the material to be used
for the strained layer formed on the material used for the
substrate 1. Therefore, once the strained layer is formed, it has a
lattice parameter approximately the same as the lattice parameter
of its growth substrate 1, and is then subjected to internal
elastic compression or tension strains.
[0088] Once the structure is formed, the third technique for making
a buffer structure includes a step for the formation of a
perturbation zone or zone of weakness at a given depth in the
substrate 1. A perturbation zone is defined as a zone in which
internal stresses exist that can form structural disturbances in
surrounding parts. This zone is preferably formed over most of the
surface of the substrate 1 parallel to the surface of the substrate
1.
[0089] One method for forming such a zone of weakness includes
implanting atomic species in the substrate 1 at a given determined
depth, with a determined implantation energy and determined
proportioning of atomic species. In one embodiment, the implanted
atomic species include one or more of hydrogen and helium.
[0090] This type of perturbation zone formed by implantation then
includes internal strains, or even crystallographic defects,
exerted by the atomic species implanted on the crystalline network
adjacent to the disturbance zone. These internal strains can then
create crystallographic disturbances in the overlying zone.
[0091] According to this method, the buffer layer is made while a
second step is being carried out by an energy input to help with
the appearance of disturbances in the region overlying the
perturbation zone, increase the amplitude of these disturbances in
this overlying region, and cause an elastic relaxation at least in
the strained layer following the appearance of disturbances. The
main purpose of such energy input is to cause at least relative
relaxation of the elastic strains in the strained layer in order to
form a relaxed strained layer.
[0092] The intermediate region within substrate 1 between the
disturbance zone and the strained layer confines dislocation type
defects and adapts the lattice parameter of the
[0093] substrate 1 to the nominal lattice parameter of the strained
layer. Therefore, in this case this intermediate region may be
considered a buffer layer.
[0094] A heat treatment is advantageously used to generate the
sufficient energy input to cause these structural modifications.
This heat treatment is advantageously carried out at temperatures
significantly lower than a critical temperature above which a
significant number of implanted atomic species would be
degassed.
[0095] Thus, local crystallographic disturbances are created from
these internal strains in the perturbation zone. These disturbances
appear mainly in the buffer layer due to minimization of elastic
energy in the strained layer, and they increase in amplitude under
the influence of the heat treatment.
[0096] When these disturbances have become sufficiently large, they
act on the strained layer by relaxing the elastic stresses in the
strained layer at least in relative terms. These relaxed strains
are mainly being due to the mismatch in the lattice parameters for
the nominal mesh in the material in the strained layer and the
material in substrate 1. Relaxation of the strained layer can also
be accompanied by the appearance of inelastic type crystalline
defects in the thickness of the strained layer, such as through
dislocations.
[0097] Suitable treatments, such as a heat treatment, may be
applied to reduce the number of these defects. For example, an
adapted treatment may be used to increase the density of
dislocations to bring it between two limiting values, the two
limiting values defining an interval of dislocation densities in
which at least some of the dislocations cancel each other out.
[0098] In all cases, the end result is a relaxed or pseudo-relaxed
layer for which the nominal lattice parameter is significantly
different from the nominal lattice parameter of the growth
substrate 1 and which has a low content of dislocations
disadvantageous for the formation of microelectronic components in
the relaxed strained layer. This relaxed or pseudo-relaxed layer
may form at least part of the multi-layer structure I. For more
information, refer to B. Hollander et al., "Strain relaxation of
pseudomorphic Si.sub.1-xGe.sub.x/Si(100) heterostructures after
hydrogen or helium ion implantation for virtual substrate
fabrication" (Nuclear and Instruments and Methods in Physics
Research B 175-177 (2001) 357-367). The buffer layer made using
this method is included in substrate 1 as defined before use of
this third method for making the buffer layer.
[0099] A fourth technique for making the buffer structure is based
on a support substrate for the buffer structure to be made, for
which the surface is in relief and deposition of the component
elements of the buffer structure on the support substrate. Since
the surface of the support substrate is not planar, the deposition
of the components of the buffer structure is made anisotropically
with growth selectivity effects and local coalescence that result
in the constructed buffer structure with determined properties.
[0100] This fourth method of making the buffer structure uses
determined techniques with parameters set such that the properties
obtained in the buffer layer correspond to crystallographic defect
confinement properties, so that the multi-layer structure I that
will be made on the buffer structure has an intrinsic quality
structure.
[0101] The choice of the topography of the support substrate is one
of the essential factors for obtaining such a result. Preferably, a
topography with patterns will be chosen that is periodically
repeated over the entire surface of the support substrate, in order
to have a homogeneous influence over the entire surface of the
wafer. For example, there would be a support substrate with bands
at a fixed distance from each other in order to concentrate
dislocations of epitaxied layers close to the bands, and
particularly the corners of the bands. The thickness of the layer
in which most of the dislocations are confined then forms the
buffer layer. The bands are preferably formed of an insulating
material formed on a substrate and which forms a mask to materials
that will be deposited subsequently.
[0102] Furthermore, an intermediate layer of crystalline materials
may be inserted between a solid substrate and the structure in
relief, acting as a substrate for growth of the buffer structure.
The insulating structure in relief is sufficiently thin so that it
does not disturb resumed growth of the buffer structure on the
growth substrate subjacent to it. This technique is also called
ELOG and is applied mainly to deposits of nitride films by MOCVD
(Metal Organic-Chemical-Vapor-Deposition) epitaxy. For example, the
article by Shuji Nakamura entitled "InGaN/GaN/AlGaN-Based Laser
Diodes with an Estimated Lifetime of Longer than 10 000 hours" in
the "Materials Research Community" Bulletin, May 1998, volume 23,
No. 5, can be used as a basis, which in particular describes growth
of GaN on a structure of SiO.sub.2 bands. Example 9 below will
describe a GaN structure made using this fourth technique for
making the buffer structure by ELOG.
[0103] Regardless of the structural configuration in substrate 1
(which may or may not include a buffer structure), the substrate 1
is formed from a crystalline material at the interface with the
multi-layer structure I, with few or no crystallographic defects.
At least some of the different layers forming the multi-layer
structure I are preferably made by growth on the substrate 1, for
example by epitaxy, CVD, or MBE.
[0104] In one embodiment, at least some of these layers are grown
in situ, directly in continuation with the formation of the layers
subjacent to each layer, the subjacent layers in this case also
advantageously being formed by layer growth. In a second
embodiment, at least some of these layers are grown after applying
light surface finishes to the layers subjacent to each layer, such
as by CMP polishing, heat treatment, or other smoothing technique.
Finally, a multi-layer structure I is obtained that includes layers
of crystalline materials.
[0105] The multi-layer structure I before recycling has a thickness
of at least two useful layers. However, the multi-layer structure I
is preferably thicker than two useful layers to compensate for
material thicknesses removed during treatment(s) applied during
recycling to correct defects often created when the useful layer is
taken off. Roughness, thickness variations, structural defects, or
other types of defects are frequently found on the surface of a
donor wafer 10 after taking off, like that shown in the post-taking
off layer 3' in FIG. 1c or FIG. 2c. For example, projections or
rough parts may appear on the surface to be taken off of the
remaining donor water 10, after taking off.
[0106] These surface parts in relief that appeared on the surface
of the multi-layer structure I depend mainly on the manner of
taking off and the technique used during taking off. For example,
one manner of taking off frequently used in industry includes
taking off the useful layer over only part of the donor wafer 10
(which is typically near the center) and leaving projections over
the surface of the donor wafer 10, rather than over the entire
surface of the donor wafer 10. These projections are typically
single-piece and located around the periphery of the surface of the
donor wafer 10, all projections then being called a "taking off
ring" in the business. Known taking off techniques, like those
described in more detail below, or the SMART-CUT.RTM. technique
mentioned above, will sometimes cause surface roughness.
[0107] Therefore the thickness of the multi-layer structure I
before taking off must be at least two useful layers to be taken
off and a thickness greater than or equal to a thickness margin
corresponding to the minimum amount of material to be removed
during the recycling operation(s). This thickness margin is
typically of the order of one micron in the case of recycling after
a SMART-CUT.RTM. type of taking off (which is generally known and
described below). However, this thickness margin can be reduced by
using high performance recycling techniques such as selective
chemical etching.
[0108] One main type of processing applied during recycling is a
process for removing material such that only part of the
multi-layer structure I remains, including at least one other
useful layer that can be taken off after recycling. This material
removal is applied on the donor wafer 10, at the free surface of
the multi-layer structure I that remains after taking off.
[0109] In one particular recycling process, a surface treatment is
applied to remove part of the multi-layer structure I on which the
useful layer was taken off. A surface thickness containing surface
defects that appeared during taking off is removed, such as
dislocation type crystallographic disturbances or isolated defects.
Several surface treatments such as the following can thus be
applied individually or in combination:
[0110] (A) dry or wet chemical etching, preferably applied in a
bath, by plasma, or by atomization; etching may be chemical,
electrochemical, or photo-electrochemical alone, or any other
equivalent etching, such as etching applied during
mechanical-chemical polishing;
[0111] (B) annealing, for example under hydrogen;
[0112] (C) chemical etching, for example under HCl accompanied by
annealing; or
[0113] (D) surface oxidation, carried out using oxidation
techniques known to one skilled in the art, on the surface of the
multi-layer structure I, followed by removal of the oxidized layer
by deoxidation, preferably using a chemical process (such as attack
by a hydrofluoric acid bath) preferably preceded by an annealing
step. This type of sacrificial oxidation process is described
below.
[0114] A surface treatment may also significantly improve the
surface condition of the multi-layer structure I remaining after
taking off, and also the uniformity of its thickness, particularly
in the case of the last four surface treatments. This is
particularly useful if bonding is applied when the useful layer is
taken off. Regardless of the surface treatment(s) selected, the
surface quality of the multi-layer structure I may be improved
compared with the surface condition before this treatment was
applied.
[0115] In a first case, the improvement in the structural and
geometric quality of the multi-layer structure I is sufficiently
good so that a useful layer can be taken off without any additional
material removal treatments. In this case, and in a first
configuration of the multi-layer structure I before taking off, the
multi-layer structure is formed of several layers of the same
material with almost the same properties. In this case and in a
second configuration of the multi-layer structure I before taking
off, this multi-layer structure includes several layers, such as
shown in FIGS. 1a, 2a, 3 or 4, with material properties
significantly different from each other at each of their
interfaces. Regardless of the configuration of the multi-layer
structure I, after taking off, material is removed from the surface
over a given thickness so that finally there will be one or more
layers remaining including one or more useful layers that can be
taken off in a subsequent taking off operation.
[0116] In a second case, the improvement in the structural and
geometric quality of the multi-layer structure I obtained after use
of the surface treatment is not sufficient for a useful layer to be
taken off without subsequent material removal treatments. The
additional treatments preferably include selective removal of one
layer with regard to the adjacent layer, the selectivity between
the two layers being due essentially to significant differences in
the properties of the two materials forming these two layers.
[0117] Selective material removal may also follow another material
removal different from that obtained after a surface treatment. For
example, a more massive removal of material on part of the
multi-layer structure I may have been applied, such as mechanical
removal by grinding, polishing, abrasion, or bombardment. However,
a treatment for selective material removal may also be applied
without necessarily applying prior treatments such as surface
treatments or more massive material removals.
[0118] In order to apply such a selective material removal, before
taking off, the multi-layer structure I includes a layer that stops
removal of the material in the overlying layer. The two materials
that make up the two layers close to their interface are chosen
such that there is a means of selectively removing material, with a
capacity for attacking the layer to be removed significantly
greater than the capacity for attacking the stop layer. Taking off
then applies to the part of the multi-layer structure I above the
stop layer, on the side of the stop layer opposite the substrate
1.
[0119] Several techniques for the selective removal of material may
be used for the protection layer 3. A first technique for the
selective removal of material includes exerting friction forces on
the layer to be selectively removed, to pull off at least part of
the material to be removed. For example, these friction forces may
be exerted by a polishing plate, possibly combined with an abrasive
or chemical action.
[0120] The material that forms the stop layer is chosen from
semiconductors so that there is a mechanical means of attacking the
material with a significantly lower capacity to mechanically attack
the material forming the stop layer than the capacity to attack the
material in the overlying layer to be removed, and thus being
suitable for the use of at least one selective mechanical attack.
The material in the stop layer then has significantly greater
resistance to the mechanical attack used than the layer overlying
it.
[0121] Consequently, it would be possible to suitably harden the
protection layer 3 to make it more resistant than the overlying
layer to the mechanical attack selected to remove the overlying
layer. For example, a semiconductor material such as Si, carbonated
with a concentration of C typically between about 5% and 50%, is
harder than the same non-carbonated semiconductor.
[0122] A second technique for selective removal of material
includes chemically and selectively etching the material to be
removed. A wet etching process may be used with etching solutions
adapted to the materials to be removed. A dry etching process may
also be used to remove material, such as etching by plasma or
atomization. Etching may also be chemical, electrochemical, or
photo-electrochemical.
[0123] The material from which the stop layer is formed is chosen
from among semiconductors so that there is a fluid (a gas or a
solution depending on whether the etching is dry or wet) for
etching with a significantly lower capacity to etch the material
forming the stop layer than the material in the overlying layer to
be removed, and thus being capable of implementing selective
etching.
[0124] However, the term "stop layer" has a primary function of
"stopping" etching, even if there is no absolute stopping of
etching. This is particularly the case for etching by atomization,
which is more accurately referred to as "atomization rate" or
"attack rate".
[0125] In general, the selectivity of etching a layer A with
respect to a layer B is quantified by a selectivity factor related
to the ratio
[0126] Etching Rate for Layer A/Etching Rate for Layer B
[0127] The stop layer thus acts as a barrier to chemical attack, by
protecting itself and the layer subjacent to it (which includes
substrate 1). The selectivity of chemical etching between the
material in the stop layer and the material in the layer to be
removed by selective etching may be obtained by the two materials
being different; the two materials containing almost identical
atomic elements, except for at least one atomic element; the two
materials being almost identical, but the atomic concentration of
at least one atomic element in a material is significantly
different from the atomic concentration of the same atomic element
in the other material; or the two materials having different
porosity densities.
[0128] For example, SiGe behaves like a stop layer with regard to
etching of Si with a solution containing compounds such as KOH
(selectivity about 1:100), NH.sub.4OH (selectivity about 1:100) or
TMAH (tetramethyl ammonium hydroxide). SiGe with a concentration of
germanium greater than or equal to 25% behaves like a stop layer
with regard to etching of SiGe with a germanium concentration less
than or equal to 20%, with a solution containing compounds such as
TMAH. Si suitably doped with a selected doping element and a
selected concentration, such as boron at more than
2.times.10.sup.19 cm.sup.-3, behaves like a stop layer for etching
undoped Si with a solution containing compounds such as EDP
(ethylene diamine and pyrocathechol), KOH, or N.sub.2H.sub.2
(hydrazine). Porous Si is etched using an etching that is selective
with regard to non-porous crystalline Si, using a solution
containing compounds such as KOH or HF+H.sub.2O.sub.2.
[0129] This chemical removal of material may also be accompanied by
the use of mechanical or other means for attacking the material. In
particular, CMP polishing may be used with a selective chemical
etching solution. A selective chemical etching may also be preceded
or followed by removal of material made by mechanical means of
attacking the material such as polishing, grinding, abrasion or any
other means.
[0130] A third technique for selective removal of material includes
applying sacrificial oxidation. In this respect, the multi-layer
structure I includes an oxidizable layer with a greater oxidation
capacity than the subjacent layer, and that will be the layer to be
removed selectively with respect to the subjacent layer to be kept
that acts as the stop layer. The oxidizable layer is included
within the multi-layer structure I before taking off (and therefore
before recycling), and the taking off then applies to the part of
the multi-layer structure I located above the oxidizable layer on
the side of the stop layer opposite the substrate 1.
[0131] The oxidizable layer is oxidized after taking off at the
surface of the multi-layer structure I at the time of recycling,
and then corresponds to a treatment technique for the removal of
surface material described above. Regardless of the selected
configuration, the sacrificial oxidation process includes a step
for forming of an oxide layer, possibly an annealing step, and a
deoxidation step. Oxidation may apply to the oxidation of one or
several layers. Oxidation may also be done near the surface of the
stop layer. Oxidation is done using any of the known oxidation
techniques, such as thermal oxidation.
[0132] In the case where thermal oxidation is used, the main
parameters are the oxidation temperature and duration. Other
important parameters are the oxidizing nature of the atmosphere,
the oxygen content, and treatment pressure conditions. These
parameters may be well controlled to facilitate
reproducibility.
[0133] The annealing step cures defects that might occur during the
oxidation step. The deoxidation step includes selectively removing
the oxide layer with respect to the stop layer, for example by a
chemical process using a hydrofluoric acid bath, and forms the
selective material removal. For example, oxidized silicon dipped in
a 10% or 20% hydrofluoric acid bath for a few minutes can typically
remove one hundred to several hundred nanometers of thickness of
this oxide.
[0134] Regardless of the method(s) used for selective removal of
material in the process according to the invention, in all cases
they can maintain a quality of the layers of the multi-layer
structure I remaining after recycling almost identical to the
quality that they had before recycling, and similar to the original
quality during their formation (before the first taking off) such
as a layer with a quality similar to the quality of the epitaxied
layer. The removable layer(s) remaining present in the multi-layer
structure I after recycling according to the invention thus have
very good quality, particularly a structural quality. Examples of
selective removals of material applied during recycling, taking off
processes that can be used, and donor wafers before recycling are
detailed below.
[0135] With reference to FIG. 1a, the multi-layer structure I
before taking off is includes a first layer 2 and a second layer 3
on the first layer 2, the first layer 2 forming a stop layer for
selective removal of the second layer 3. Layer 2 and layer 3 are
each at least as thick as the thickness of the useful layer.
[0136] A method for taking off a thin layer is shown in FIGS. 1b
and 1c. A first preferred take off step according to the invention
includes creating a weakening area in the second layer 3, in order
to perform a detachment and thus take off the required
layer(s).
[0137] Several techniques may be used to create a weakening area of
this type. A first technique, called the SMART-CUT.RTM. known to
those skilled in the art (and is described in a number of books
dealing with techniques for reducing wafers) includes a first step
in which atomic species (such as hydrogen ions) are implanted with
a determined energy to thus create a weakening area. A second
technique includes forming a weakened interface by creation of at
least one porous layer, such as described EP-A-0 849 788. The
weakened area is created between the first layer 2 and the second
layer 3 or in the second layer 3.
[0138] With reference to FIG. 1b, a second step of taking off a
thin layer includes adding on a receiving substrate 5 to the
surface of the donor wafer 10. The receiving substrate 5 forms a
sufficiently rigid mechanical support to support the second layer
3, part of which will be taken off the donor wafer 10 to protect it
from any mechanical stresses from the outside. This receiving
substrate 5 may be made of silicon or quartz or any other type of
material. The receiving substrate 5 is added by bringing it into
intimate contact with the multi-layer structure I and bonding it,
in which there is preferably a molecular bonding between the
substrate 5 and structure 1. This bonding technique, and variations
of it, are described in "Semiconductor Wafer Bonding" (Science and
technology, Interscience Technology) by Q. Y. Tong, U. Gosele and
Wiley.
[0139] If necessary, bonding is accompanied by an appropriate
treatment of the corresponding surfaces to be bonded by adding
thermal energy or by adding an additional binder. Thus, a heat
treatment used during or immediately after bonding makes the bond
rigid. Bonding may also be controlled by a bonding layer such as
silica, inserted between the multi-layer structure I and the
receiving substrate 5, with particularly strong molecular bonding
capacities.
[0140] Advantageously, the material forming the bonding face of the
receiving substrate 5 or the material of the bonding layer formed
if any, is electrically insulating to make an SeOI structure from
the taken off layers. The semiconductor layer of the SeOI structure
in this case is the taken off part of the second transferred layer
3. Once the receiving substrate 5 is bonded, part of the donor
wafer 10 is removed at the weakened area formed previously, by
detaching it.
[0141] In the case of the SMART-CUT.RTM. technique, a second step
is performed wherein the area implanted (forming the weakening
area) is subjected to a thermal and/or mechanical treatment, or a
treatment with any other type of energy input, to detach it at the
weakening area. In the case of the second technique, the weakened
area is mechanically treated, or another type of energy is input,
in order to detach it at the weakened layer. Detachment at the
weakening area according to one of these two techniques removes the
largest part of the wafer 10, to obtain a structure from whatever
is left of the second layer 3 that was taken off (which in this
case represents the useful layer), the bonding layer, if any, and
the receiving substrate 5.
[0142] A finishing step on the surface of the structure formed at
the taken off layer is preferably applied to remove any surface
roughness, non-homogeneities in the thickness, or undesirable
layers, by using, for example, a chemical mechanical polishing CMP,
etching, or at least one heat treatment. In one embodiment, a stop
layer with a selective removal of material may be included in the
useful layer in order to improve the finish of the useful layer by
selective removal of material stopped at this stop layer.
[0143] A post-taking off layer 3' forms the part of the second
layer 3 that remained after taking off and located above the first
layer 2 and the complete wafer forming a donor wafer 10' to be sent
to recycling so that it can be reused later during taking off a
subsequent layer. The result of recycling such a donor wafer 10' is
shown in FIG. 1d. It uses selective removal of material in the
post-taking off layer 3' with respect to the first layer 2,
possibly followed by or preceded by a surface finishing step. The
donor wafer 10" is then capable of providing a useful layer taken
off in the first layer 2 during a subsequent taking off without any
additional step.
[0144] In another embodiment, the donor wafer 10 includes several
pairs, each formed of a first layer 2 and second layer 3, the
second layer of each pair can be removed selectively with respect
to the first layer in the same pair by a means of selectively
removing the material. These layers may also be referred to as
sub-layers. Preferably, one of the layers 2 of a pair may be
selectively removed with respect to the layer subjacent to it,
which is included within the multi-layer structure I. This
embodiment has the advantage that the layer 3 may be removed
selectively with respect to the subjacent layer 2 or the layer 2
may be removed selectively with respect to the layer subjacent to
it. Still, in one special case, the layer subjacent to layer 2 is a
layer 3 that belongs to another pair of layers.
[0145] One example of a particular configuration of a multi-layer
structure I that includes several such pairs of layers is given
with reference to FIG. 3, in which the multi-layer structure I is
composed of a first pair consisting of a first layer 2A and a
second layer 3A and a second pair consisting of a first layer 2B
and a second layer 3B, each layer having the same thickness or a
greater thickness than the useful layer. In this embodiment of a
donor wafer 10, one or more layers may be removed in one or more
steps, according to one process of the invention. One or more
intermediate recycling steps may be applied by selective removal of
material on the part of the layer remaining after taking off and
the subjacent layer that includes at least one useful layer that
can be taken off. Thus, with this particular configuration, it is
possible to take off useful layers with one or multiple layers of
materials.
[0146] With reference to FIG. 2a, the multi-layer structure I
includes a first layer 2 inserted between a second layer 3B
overlying it and a third layer 3A adjacent to the substrate 1,
before taking off. The thickness of the second layer 3B and the
third layer 3A are greater than or equal to the thickness of the
useful layer. The material forming the first layer 2 is chosen such
that there is at least one method of removing material with a
capacity to attack the material forming the first layer 2
significantly different from the capacity to attack the material in
at least one of the two layers 3A and 3B, at their corresponding
interfaces to permit selective removal.
[0147] In one embodiment, the thickness of the first layer 2 is at
least as great as the thickness of a useful layer to be taken off.
The result is then a configuration similar to one of those
described above. In a second embodiment, the crystallographic
structure of layers 3A and 3B, and particularly the lattice
parameters, are almost identical, and it is undesirable for the
first layer 2 to significantly disturb the crystallographic
structure of its adjacent layers 3A and 3B. In particular, it would
be undesirable to disturb the crystalline growth of the second
overlying layer 3B during its formation on the first layer 2, for
which the lattice parameter must be approximately the same as the
lattice parameter for the part 3A subjacent to the first layer
2.
[0148] In another embodiment, the first layer 2 is elastically
constrained so that its lattice parameter is almost identical to
the lattice parameter of layer 3A subjacent to it, even if the
lattice parameter of the material in this layer is significantly
different from the lattice parameter of the first layer 2. The
nominal parameter of the first layer 2 and the lattice parameter of
the zone subjacent to it (included within the third layer 3A) are
similar to each other, to prevent the appearance of defects (such
as dislocations or local stresses) in the first layer 2. The first
layer 2 must be sufficiently thin to prevent progressive relaxation
of the elastic strain through the thickness of the layer or the
generation of defects. To achieve this, the thickness of such a
first layer 2 formed of an elastically strained semiconductor
material must be less than a critical thickness known to one
skilled in the art, and depending particularly on its component
materials, of the materials in the layers adjacent to it, and
techniques for making the strained layer.
[0149] Critical thicknesses typically encountered for a Si layer 2
between two layers 3A and 3B of SiGe (50%-50%) are approximately a
few tens of nanometers.
[0150] In a second embodiment of the first layer 2, a material is
chosen for the first layer 2 with a nominal lattice parameter
nearly the same as the lattice parameter of the materials from
which the zones adjacent to it are made. Thus, unlike the first
embodiment, the crystallographic structure of the first layer 2 in
this case is significantly relaxed.
[0151] Consequently, and also to satisfy a selectivity criterion
during removal of material applied during the first recycling step,
the material for the first layer 2 will be chosen such that it has
at least one constituent element that is not in at least one of the
materials adjacent to it. The material in the first layer 2,
however, has a lattice parameter similar to the lattice parameter
of adjacent zones, this constituent element is then the essential
element that will determine selectivity with respect to the
adjacent layer considered during selective removal of material. In
one case, no constituent element of the material in the first layer
2 is present in the material making up the adjacent zone concerned
by selective removal of material, and the two materials are then
entirely different. In another case, every constituent element in
the first layer 2 that is different from the adjacent zone
concerned by selective removal of material may be an additional
element or an element that does not exist in the adjacent layer
being considered.
[0152] For example, a first layer 2 with approximately the same
lattice parameter as adjacent zones could be doped, so that this
lattice parameter is not significantly disturbed after doping. If
the first layer 2 is formed of the same material as the material
from which the adjacent zone by the selective removal of material
is made, this doping element is the element that will determine the
selectivity capacity. When doping the first layer 2, the thickness
of the first layer 2 may in some cases remain less than a critical
thickness known to those skilled in the art, if defects such as
dislocations, and particularly through dislocations, are not
wanted.
[0153] In a third embodiment of the first layer 2, the layer 3A
made previously is made porous on the surface in order to make a
porous layer. This increase in porosity may be applied by
anodization or by any other porosity technique, such as that
described in EP 0 849 788 A2.
[0154] This layer of porous material may make a first layer 2, if
at least one adjacent material can be selectively attacked using an
appropriate attack method. The porosity does not significantly
disturb the crystallographic structure of these two adjacent
layers, such that a first layer 2 does not significantly disturb
the crystallographic structure of the donor wafer 10. The result is
a crystallographic structure of the first layer 2 that is very
similar or identical to the crystallographic structure of the zones
adjacent to it, such that the first layer 2 does not disturb the
crystallography of the surrounding structure.
[0155] Alternatively, there may be a first layer 2 with a specific
influence on the lattice parameter of the surrounding structures,
the state (strained or relaxed, complete or relative) that the
first layer 2 may induce in adjacent layers, in these cases
represents a property considered to have very little advantage for
the following application.
[0156] With reference to FIGS. 2b and 2c, part of the layer 3B is
taken off and transferred onto a receiving substrate 5 according to
a taking off method similar to those described above with reference
to FIGS. 1b and 1c. After taking off and during recycling,
selective removal of material applied at the first layer 2 includes
at least one of the following selective removals of material: as
shown in FIG. 2d, selective removal of the material in the layer
3B' adjacent to the first layer 2, the first layer 2 forming a stop
layer for removal of material; after removal of layer 3B',
selective removal of the material in the first layer 2, the
material in the third layer 3A adjacent to the first layer 2
forming a stop layer for removal of material.
[0157] In one particular method of selective removal, two
successive selective removals of materials may be combined at the
first layer 2. In this case, the second layer 3B, and then the
first layer 2 are selectively removed.
[0158] Regardless of the method chosen for selective removal of
material in the first recycling step and the method chosen to
remove the part of the donor wafer 10 on the same side as the
useful layer, there is a stop layer for removal of material (the
first layer 2 in the case of the first selective removal of
material or the zone subjacent to the first layer 2 included in the
third layer 3A in the case of the second selective removal of
material). The stop layer acts as a barrier for material attack,
and in particular protects the third layer 3A in which there is a
new useful layer to be taken off during a later taking off.
[0159] In embodiment, the donor wafer 10 includes several triplets
formed of the first layer 2, second layer 3B, and the third layer
3A. The second layer 3B or the first layer 2 of each triplet may be
removed selectively with respect to the layer subjacent to them,
and form part of the same triplet, by removing the material
selectively. Preferably, there is also a method of removing
material in a third layer 3B of a triplet selectively with respect
to a layer subjacent to it that is also included in the multi-layer
structure I. This embodiment has the advantage that any layer in a
triplet of layers can be selectively removed during recycling.
[0160] In this embodiment, the layer subjacent to the third layer
3B is a second layer 3A belonging to another triplet of layers.
Alternatively, the layer subjacent to the third layer 3B is a first
layer 2 that does not belong to the same triplet as layer 3B. In
this case, the first layer 2 in the triplet overlying it and to
which the third layer 3B belongs is preferably inserted with
another triplet subjacent to it. In this case, the result is an
assembly formed from a sequence of type 3A layers and type 3B
layers separated by a type 2 layer. An example of a particular
configuration of a multi-layer structure I that several such
triplets of layers is shown in FIG. 4, in which the multi-layer
structure I includes a first triplet formed of a layer 2A inserted
between a layer 3A and 3B as shown in FIG. 2a; a second triplet
formed of a first layer 2C inserted between a layer 3C and 3D as
shown in FIG. 2a; and a layer 2B inserted between the two triplets.
The thickness of each of the layers 3A, 3B, 3C and 3D is at least
the thickness of the useful layer to be taken off. The first
function of the layers 2A, 2B and 2C is to protect the layer
subjacent to them from removal of material applied during recycling
by forming a stop layer to selective removal of the layer overlying
it during recycling; or by forming a layer to be removed
selectively with respect to the layer subjacent to it. Therefore,
in this configuration of a donor wafer 10, there are layers 3A, 3B,
3C, and 3D in which useful layers can be taken off, separated by
protection layers 2A, 2B, and 2C respectively protecting the layers
subjacent to them during recycling.
[0161] Therefore, according to one process of the invention, one or
more layers may be taken off in one or more steps, with one or more
intermediate recycling operations by selective removal of the part
of the layer remaining after taking off with respect to the first
protection layer encountered (2A, 2B or 2C), this layer thus
protecting a layer subjacent to it and that includes at least one
useful layer that can be taken off. Thus, with this configuration
it is possible to take off useful layers formed by one or more
sub-layers of materials.
[0162] When several layers are taken off, at least one protection
layer or part of a protection layer such as layers 2A, 2B and 2C
are also taken off. This layer may act as a protection layer when
selectively removing material when the surface of the taken off
useful layer is being finished rather than during recycling,
particularly to remove surface roughness.
[0163] In general, and for a multi-layer structure I according to
the invention in which several useful layers can be taken off
between the recycling steps, a cyclic process for taking off useful
layers from a donor wafer 10 is used by performing the following
steps iteratively in turn: a taking off process and a recycling
process. Before the cyclic taking off method is applied, a process
for making the donor wafer 10 may be implemented with one or
several techniques for making thin layers on the substrate 1
described above.
[0164] The taking off may be repeated several times starting from a
donor wafer 10 (such as one of those shown in FIGS. 1a, 2a, 3, or
4) in the same structure I made on substrate 1 without necessarily
forming additional layers or without necessarily applying a
treatment to retrieve at least part of the substrate 1. This saves
time with implementation of the global taking off process, and
makes implementation of the process easier and significantly less
expensive than the different processes according to the state of
the art.
[0165] The number of taking off operations performed on the
multi-layer structure is a function of the thickness of the
multi-layer structure. Eventually, the remaining multi-layer
structure I is no longer sufficiently thick to contain a useful
layer to be taken off. In a first case, the donor wafer 10 is
thrown away and in this case the entire substrate 1 is lost. This
makes the substrate may be complex, longer, and more expensive,
particularly if the substrate 1 includes a buffer structure.
[0166] In another embodiment, at least part of the substrate 1 is
recovered using a recycling process. If the substrate 1 includes a
buffer structure, three types of recycling of the substrate 1 may
be applied. A recycling process that includes removal of the entire
buffer structure, but in which it is possible to keep at least part
of the support substrate on which the buffer structure was formed,
may be used. This recycling causes loss of part of the substrate 1,
however, which is usually the most difficult and most expensive to
make and requires the use of an additional step to form a buffer
structure. For example, it may be required to reform a substrate 1
equivalent to the substrate before recycling.
[0167] A recycling process that includes removal of part of the
buffer structure, and is capable of keeping the support substrate
on which the buffer structure was formed and part of the buffer
structure, such as a buffer layer that is expensive to make, may be
used. For example, when recycling is finished, selective removal of
material is possible beginning with a stop layer judiciously
located in the buffer structure. An additional step to reform a
buffer structure is preferably applied if required to reform a
substrate 1 equivalent to the substrate before recycling.
[0168] A recycling process that includes the removal of at least
part the remainder of the original multi-layer structure I, to keep
the entire substrate 1 may be used. A finishing step for the rest
of the multi-layer structure I may be applied during recycling. The
finishing step may include, for example, CMP, heat treatment,
sacrificial oxidation, bombardment, or other smoothing technique,
or a selective material removal may be applied using a stop layer
judiciously located between the multi-layer structure I and the
substrate 1.
[0169] After recycling of the substrate 1, a new multi-layer
structure I is formed in which several useful layers may be taken
off according to a process of the invention. This new multi-layer
structure I may be similar to the structure before recycling. This
new multi-layer structure I may have a slightly different structure
from the multi-layer structure I before recycling, by slightly
modifying some manufacturing parameters. For example, the
concentrations of some compounds in a material may be slightly
modified. In all cases, the multi-layer structure is preferably
made by growth of layers, for example by epitaxy using CVD or
MBE.
[0170] In one embodiment, the growth of at least one layer within
the multi-layer structure I is done in situ, directly in
continuation with the formation of the subjacent growth support,
the subjacent growth support in this case also advantageously being
formed by layer growth. In a second embodiment, at least one of
these layers is grown after a slight finishing step on the
subjacent growth support surface, such as by CMP polishing, heat
treatment, or other smoothing technique.
[0171] In the remainder of this application, example configurations
of donor wafers 10 are presented that include multi-layer
structures 1 that can be implemented by a process according to the
invention. In particular, different materials will be presented
that can advantageously be used in such donor wafers 10. Some of
the examples may include a buffer structure and a support substrate
in the substrate 1, the buffer structure being formed on the
support substrate. In some of the examples, the buffer structure
has a first lattice parameter at the level of its support substrate
and a second lattice parameter close to its interface with the
subjacent multi-layer structure I. This type of buffer structure
includes a buffer layer to make such an adaptation of the lattice
parameter.
[0172] The first technique for making a buffer structure (as
described above), usually used to obtain a buffer layer with this
property, is to have a buffer layer formed by several atomic
elements, wherein at least one atomic element is included in the
composition of the support substrate, and at least one atomic
element that is not located in the support substrate at all, or
only slightly, with a concentration that varies gradually through
the thickness of the buffer layer. The gradual concentration of
this element in the buffer layer will be the main cause of the
gradual variation of the lattice parameter in the buffer layer,
metamorphically.
[0173] Thus, in this configuration, a buffer layer is mainly an
alloy. The atomic elements chosen for the composition of the
support substrate for the buffer structure and the buffer layer may
be of atomic element Group IV, such as Si or Ge.
[0174] For example, this embodiment includes a Si support substrate
and a SiGe buffer layer with a concentration of Ge that varies
gradually through the thickness between a value close to 0 at the
interface with the support substrate and a determined value on the
other face of the buffer layer. In another case, the composition of
the support substrate or the buffer layer may include a pair of
Group III-V atomic elements, such as a pair chosen from possible
combinations of (Al, Ga, In), (N, P, As).
[0175] For example, one embodiment includes a support substrate of
AsGa and a buffer layer of As and Ga and at least one other
element, and varying gradually in thickness between a value close
to 0 at the interface with the support substrate and a determined
value on the other face of the buffer layer. The composition of the
support substrate or the buffer layer may include a pair of Group
II-VI atomic elements, such as a pair chosen among possible
combinations of (Zn, Cd), (S, Se, Te).
EXAMPLES
[0176] The first five examples deal particularly with donor wafers
10 that include a support substrate 1 made of Si and a buffer layer
made of SiGe or Si and other layers of Si and SiGe within the
multi-layer structure I. These wafers 10 are particularly useful
when taking off layers of strained SiGe and/or Si to make SGOI, SOI
or Si/SGOI structures. In this context, the etching solutions used
are different depending on the material (Si or SiGe) to be etched.
Thus, etching solutions suitable for etching these materials will
be classified in categories, assigning an identifier taken from the
following list to each category:
[0177] (A) S1: selective etching solutions of Si with respect to
SiGe such that a solution includes at least one compound among KOH,
NH.sub.4OH (ammonium hydroxide), TMAH, EDP, or HNO.sub.3, or
solutions combining agents such as HNO.sub.3,
HNO.sub.2H.sub.2O.sub.2, HF, H.sub.2SO.sub.4, H.sub.2SO.sub.2,
CH.sub.3COOH, H.sub.2O.sub.2, and H.sub.2O as disclosed in WO
99/53539, page 9.
[0178] (B) S2: selective etching solutions of SiGe with respect to
Si such as a solution including HF, H.sub.2O.sub.2, CH.sub.3COOH
(selectivity about 1:1000), or HNA (hydrofluoric-nitric-acetic
solution).
[0179] (C) Sc1: selective etching solutions of SiGe with a
concentration of Ge significantly less than or equal to 20%, with
respect to SiGe with a concentration of Ge equal to or greater than
25%, such as a solution containing TMAH or KOH.
[0180] (D) Sd1: selective etching solutions of undoped Si with
respect to boron doped Si, preferably doped to more than
2.times.10.sup.19 cm.sup.-3, such as a solution containing EDP
(ethylene diamine and pyrocathechol), KOH, or N.sub.2H.sub.2
(hydrazine).
Example 1
[0181] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate made of Si; a buffer structure formed of SiGe
made according to the first technique for making a buffer
structure, and including a buffer layer and an additional layer;
and a multi-layer structure I that includes SiGe. The concentration
of Ge in the buffer layer preferably increases progressively from
the interface with the support substrate, to vary the SiGe lattice
parameter as explained above. The thickness is typically about 1 to
3 micrometers for surface concentrations of Ge of less than 30% to
obtain a good structural relaxation at the surface, and to confine
defects related to the difference in the lattice parameter such
that they are buried.
[0182] The additional layer is made of SiGe significantly relaxed
by the buffer layer, with an advantageously uniform concentration
of Ge almost identical to the concentration of the buffer layer
close to their interface.
[0183] The concentration of germanium in the silicon within the
relaxed SiGe layer is typically about 15% to 30%. This upper limit
of 30% represents a typical limitation of current techniques, but
it may vary in future years. The thickness of the additional layer
may vary widely depending on the case, with a typical thickness of
about 0.5 to 1 micron.
[0184] As shown in FIG. 2a, the multi-layer structure I before
taking off preferably includes a triplet of the following layers:
layer 3A made of substantially relaxed SiGe with a thickness
greater than the thickness of a useful layer to be taken off; a
layer 2 on layer 3A; and a layer 3B on the substantially relaxed
SiGe layer 2 and with a thickness greater than the thickness of a
useful layer to be taken off.
[0185] Layer 2 is formed of one of strained Si or strained SiGe.
Where the layer 2 is formed of strained Si or SiGe, the thickness
of this layer 2 must not exceed a critical thickness. For a layer 2
made of strained Si inserted between two layers of SiGe with a
concentration of Ge of about 20%, the critical thickness is
typically of the order of about 20 nanometers.
[0186] Several types of etching may preferably be used after taking
off part of layer 3B, depending on the material in layer 2. If the
layer 2 is made of strained Si, the overlying part made of SiGe is
etched selectively with an S2 type solution, or after the layer 3B
remaining after taking off has been removed, the layer 2 is etched
selectively with an S1 type solution. If layer 2 is made of
strained SiGe with a concentration of Ge at least about 25% and the
concentration of Ge in the overlying layer is up to about 20%, the
overlying part made of SiGe is selectively etched with an Sc1 type
solution. If layer 2 is made of SiGe with a concentration of Ge up
to about 20% and the concentration of Ge in the subjacent layer is
at least about 25%, after the layer 3B remaining after taking off
has been removed, the layer 2 is etched selectively with a Sc1 type
solution.
[0187] A layer 2 formed of SiGe or Si may also be doped with doping
elements such as boron or phosphorus, in order to improve the
selectivity of chemical etching. In one particular configuration of
the multi-layer structure I, the multi-layer structure I includes
several triplets of these layers 3A, 2 and 3B. In one particular
embodiment, the multi-layer structure I includes only pairs of
layers 2 and 3, as shown in FIG. 3. Preferably, a layer 2
separating two consecutive triplets, such as the donor wafer 10
shown in FIG. 4 will be present.
[0188] It is then preferable and convenient to find all taking off
formulas involving one or several layers taken off in one or in
several operations, separated by recycling processes according to
the invention and preferably including selective etching between
SiGe and the material in a layer 2.
Example 2
[0189] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate formed of Si; a buffer structure formed of SiGe
made according to the first technique for making a buffer
structure, and including a buffer layer formed of SiGe and an
additional layer formed of Ge; and a multi-layer structure I
including one or more of AsGa and AlGaAs. The concentration of Ge
in the buffer layer preferably increases progressively from the
interface with the support substrate, to vary the lattice parameter
of the Si support substrate with respect to the lattice parameter
of the additional layer made of Ge. The concentration of Ge in the
buffer layer is increased from about 0 to about 100% or preferably
about 98% for a complete match in the theoretical mesh between the
two materials.
[0190] For example, as shown in FIG. 1a, the multi-layer structure
I before taking off preferably includes the pair of layers: a layer
2 formed of AlGaAs; and a layer 3 on layer 2, layer 3 formed of
substantially relaxed AsGa and with a thickness greater than the
thickness of a useful layer to be taken off.
[0191] Taking off applies to the part of the multi-layer structure
I above layer 2, and recycling includes selective chemical etching
of layer 3 with a selective etching solution, such as a solution
containing citric acid (C.sub.6H.sub.8O.sub.7) and oxygenated water
with a pH of about 6 to 7 (the selectivity coefficient is typically
20), so that almost the entire layer 3 can be taken off, in this
case layer 2 behaving like an etching stop layer.
[0192] In one particular configuration of the multi-layer structure
I, the multi-layer structure I includes another layer made of AsGa
subjacent to layer 2. Taking off then applies to the part of the
multi-layer structure I above this other AsGa layer, and recycling
includes selective chemical etching of layer 2 with a selective
etching solution, such as a solution that includes dilute
hydrofluoric acid (between about 9% and 48%) (the selectivity
coefficient is typically about 350 to 10000), so that almost the
entire layer 2 can be removed, with the other subjacent AsGa layer
behaving like an etching stop layer. In one case, the two selective
etchings can be done one after the other in order to remove at
least part of layer 3 and then to remove layer 2.
[0193] In one embodiment, the multi-layer structure includes
several pairs of these layers 2 and 3. The multi-layer structure I
is formed of pairs of layers 2 and 3, as shown in FIG. 3.
[0194] It is then preferable and convenient to find all taking off
formulas involving one or several layers taken off in one or in
several operations, separated by recycling processes according to
the invention, preferably including selective etching between
AlGaAs and GaAs.
Example 3
[0195] The donor wafer 10 is formed of a substrate 1 formed of Si
and a multi-layer structure I that includes Si before taking-off.
As shown in FIG. 2a, the multi-layer structure I before taking-off
preferably includes a triplet of the following layers: a layer 3A
made of substantially relaxed Si with a thickness greater than the
thickness of a useful layer to be taken off; a layer 2 on layer 3A;
and a layer 3B on the substantially relaxed Si layer 2 and with a
thickness greater than the thickness of a useful layer to be taken
off. Layer 2 is formed of one doped Si or strained SiGe. Where
layer 2 is formed of strained SiGe, the thickness of this layer 2
must not exceed a critical thickness related to the Ge
concentration.
[0196] Several types of etching may preferably be used after taking
off part of layer 3B, depending on the material in layer 2. If the
layer 2 is formed of doped Si, the overlying part formed of Si and
left after taking off is selectively etched with Sd1 type solution.
If the layer 2 is formed of strained SiGe, the overlying part
formed of Si is etched selectively with S1 type solution, or after
the layer 3B remaining after taking off has been removed, the layer
2 is selectively etched with an S.sub.2 type solution.
Example 4
[0197] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate made of Si and a buffer layer made using the
second particular technique for making a buffer structure discussed
above and in WO 00/15885.
[0198] A first layer formed of Ge or SiGe is deposited, possibly
followed by deposition of a second optional layer that can improve
the crystallographic quality of the overlying layer, as disclosed
in WO 00/15885. The second layer is formed of SiGe (50/50), if the
first layer is Ge; strained Si if the first layer in the buffer
layer is made of SiGe.
[0199] The donor wafer also includes a multi-layer structure I that
includes a sequence of pairs of layers, each pair formed of a
relaxed layer 3 and a strained layer 2, each relaxed layer 3 is at
least as thick as the a useful layer to be taken off and is formed
of Ge, if the first layer of the buffer layer is formed of Ge, or
SiGe if the first layer the buffer layer is formed of SiGe (with a
concentration almost the same as the concentration of the first
layer in the buffer layer). Each strained layer 2 is formed of
strained Si or SiGe and its thickness is less than a critical
thickness beyond which the elastic strain starts to relax, this
critical thickness depending on the composition of the three
adjacent relaxed layers made of Si. Removal of the multi-layer
structure I may apply to a set of layers or a single layer of the
multi-layer structure 1. Thus, a relaxed layer 3, a strained layer
2 or a set of strained layers 2 and relaxed layers 3 may be taken
off, to transfer them onto a receiving substrate 5.
[0200] If taking off takes place in a relaxed layer 3, recycling
according to the invention can be implemented by chemically etching
the remaining relaxed layer 3 with a solution capable of etching
the material in the layer 3 selectively with respect to the
material in layer 2. If layer 2 is formed of Si and layer 3 is made
of SiGe, the strained layer 2 will be etched with S2 type solution,
the strained layer 2 then being an etching stop layer. This etching
may be followed by a second etching of the strained layer 2 that is
selective with respect to another relaxed layer. It is thus
possible to implement a second taking off after a first taking off,
the second taking off applying to the strained layer 2 or part of
the subjacent multi-layer structure I.
[0201] Note that the structures obtained after taking off according
to this example are free of any dislocation type defects, even in a
buried region. The structures obtained as a result may then be used
to grow additional layers, for example, formed of strained silicon,
by epitaxy on the layer made of strained SiGe, Ge or Si.
Example 5
[0202] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate formed of Si; a buffer layer formed of Si
according to the third technique for making a buffer structure; and
a multi-layer structure I that includes a triplet of the following
layers: (1) a first layer 3A formed of SiGe with at least 15% of Ge
on the buffer structure, the SiGe being relaxed or pseudo-relaxed;
(2) a second layer 2 formed of strained Si with a thickness much
less than the cumulative thickness of the first layer 3A and the
second layer 3B; and (3) a third layer 3B formed of SiGe and
including at least 15% of Ge, the SiGe being relaxed or
pseudo-relaxed. This donor wafer 10 is obtained after making the
buffer layer according to the third technique for producing the
buffer structure.
[0203] In a first embodiment of the buffer layer, the triplet of
layers was present before the buffer layer was made. The donor
wafer 10 is in the form of a substrate 1 formed Si; and a
multi-layer structure I' formed of the following layers: (1) a
first layer 3A' formed of SiGe with at least 15% of Ge on the
buffer structure, the SiGe being strained; (2) a second layer 2'
formed of relaxed Si; and (3) a third layer 3B' formed of SiGe that
includes at least 15% of Ge, the SiGe being strained. The strained
SiGe layer 3A' has nearly the same characteristics as the strained
SiGe layer 3B'.
[0204] The density of defects such as dislocations in the
multi-layer structure I' is preferably less than about 10.sup.7
cm.sup.-2. Typical thicknesses of a multi-layer structure I' with
layers 3A' and 3B' with 15% of Ge and a multi-layer structure I'
with layers 3A' and 3B' with 30% Ge, are about 250 nm and about 100
nm respectively, thus remaining below the critical end of elastic
strain thickness for each layer. The typical thickness of the
relaxed layer 2' is a few tens of nanometers. The orders of
magnitude of the thicknesses of the strained layers 3A' and 3B' are
preferably nearly the same as each other. Therefore, the
multi-layer structure I' is globally strained.
[0205] The buffer layer will be made by the following steps:
formation of a disturbance area in the support substrate 1 formed
of Si by the implantation of atomic species such as H or He; and
heat treatment to cause at least relative relaxation of elastic
strains in the multi-layer structure I'.
[0206] Implantation energy ranges of H and He used during the first
step are typically about 12 to 25 keV. Implanted H or He doses are
typically about 10.sup.14 to 10.sup.17 cm.sup.-2. Thus for example,
for a strained layer 3A' with 15% of Ge, H will preferably be used
for the implant at a dose of about 3.times.10.sup.16 cm.sup.-2 with
an energy about 25 keV. For a strained layer with 2% to 30% of Ge,
He will preferably be used for the implant at a dose of about
2.times.10.sup.16 cm.sup.-2 with an energy about 18 keV. Implant
depths of atomic species in the substrate 1 are also typically
about 50 nm to 100 nm.
[0207] The heat treatment applied during the second step must be
adapted so that disturbances are displaced in the region between
the disturbance zone and the multi-layer structure I'. This region
in which disturbances are displaced will then form the buffer
layer.
[0208] The arrival of dislocations at the interface between the
buffer layer and the multi-layer structure I' causes a global
relaxation of the multi-layer structure I' as follows: elastic
relaxation of the strained layer 3A' to form the relaxed or
pseudo-relaxed layer 3A; elastic strain in the relaxed layer 2' to
form the strained layer 2, this layer having a lattice parameter
nearly the same as the lattice parameter of the subjacent relaxed
SiGe; and elastic relaxation of the strained layer 3B' to form the
relaxed or pseudo-relaxed layer 3B. The movement of dislocations in
the buffer layer also causes a large disappearance of dislocations
in the multi-layer structure I'.
[0209] The heat treatment is preferably implemented under an inert
atmosphere. However, the heat treatment may be applied under
another atmosphere, such as an oxidizing atmosphere. A particular
heat treatment to be applied for this type of donor wafer 10 will
be made at temperatures of typically about 400.degree. C. to
1000.degree. C. for about 30 s to 60 minutes, preferably about 5
minutes to about 15 minutes.
[0210] In a second embodiment of the buffer layer, the triplet of
layers were not present before the buffer layer was made. The donor
wafer preferably includes a Si substrate 1 and a layer formed of
SiGe including at least 15% of Ge, the SiGe being elastically
strained. Relaxation techniques and parameters for this SiGe layer
are nearly the same as for the first embodiment of the buffer
layer.
[0211] The next step after the buffer layer has been made is to
grow layers forming the multi-layer structure that includes the
triplet of globally relaxed layers. The multi-layer structure I is
thus made after the buffer layer, unlike in the first embodiment
proposed in this example. For further information about
experimental techniques, refer to studies done by B. Hollnder et
al., "Strain relaxation of pseudomorphic Si.sub.1-xGe.sub.x/Si(100)
heterostructures after hydrogen or helium ion implantation for
virtual substrate fabrication" (in Nuclear and Instruments and
methods in Physics Research B 175-177 (2001)357-367).
[0212] After the wafer 10 has been bonded onto a receiving
substrate 5 on the relaxed layer 3B, taking-off is performed with
or without an intermediate bonding layer using one or more of the
known techniques described above. Some of the relaxed SiGe layer 3B
is taken off. Recycling is preferably done by selective chemical
etching of the residue of layer 3B using a type S2 solution, layer
2 then forming an etching stop layer. A second selective chemical
etching step of layer 2 can then be applied using S1 type solution,
the layer 3A forming an etching stop layer. The result is a
recycled donor wafer 10 that can give a new useful layer in layer
3A or a pair of layers 2/3A, by taking off.
Example 6
[0213] The donor wafer 10 is formed of a substrate 1 formed of a
support structure at least part of which is formed of AsGa at its
interface with the overlying buffer structure, a buffer structure
formed of Group III-V material made according to the first buffer
structure manufacturing technique, and a multi-layer structure I
formed of a Group III-V material before taking-off. The support
structure may be formed of solid AsGa or solid Ge, on which a
thickness of AsGa is epitaxially grown.
[0214] The first advantage of the buffer structure is to adapt the
lattice parameter with the material of the multi-layer structure I
close to their interface (which for example may have a nominal
value of 5.87 Angstroms in the case of InP), to the value of the
AsGa (for which the nominal value is about 5.65 Angstroms).
[0215] In solid Group III-V materials, the practical advantage of
such a buffer structure may become clear by comparing different
materials such as solid InP and solid AsGa. For example solid AsGa
is less expensive, more easily available on the semiconductors
market, less weak mechanically, with the use of the best known rear
face contact technologies, and available in larger sizes (typically
6 inches instead of 4 inches for solid InP) than for solid InP.
[0216] The electronic performances of InP, however, are usually
more useful than the electronic performances of AsGa. Thus, the
donor wafer 10 gives a solution for the manufacture of a 6-inch InP
layer, by proposing a multi-layer structure I formed of InP on an
AsGa support substrate and relaxed through a buffer structure.
[0217] Therefore, the possible advantages of such a donor wafer 10
become evident--it can be used to make an active layer made of a
known Group Ill-V material to be transferred with determined
quality and properties, for example that may be similar to the
properties that could have been obtained if solid Group III-V
material had been used.
[0218] The thickness of the buffer structure included within this
type of donor wafer 10 is typically more than one micron, and this
thickness will increase, particularly if it is possible to avoid
destroying it after each taking off operation due to the use of a
recycling process according to this invention.
[0219] In the example of the multi-layer structure I formed of InP
essentially relaxed at its interface with the subjacent buffer
structure, the buffer structure of the substrate 1 then preferably
includes a buffer layer formed of InGaAs with a concentration of In
of about 0 to about 53%. The buffer structure may also include an
additional layer made of a Group III-V material such as InGaAs or
InAlAs, with an almost constant concentration of atomic
elements.
[0220] In one embodiment, at least one InP layer is taken off in
the multi-layer structure I so that it can be transferred onto a
receiving substrate 5. Thus, any electrical and electronic
properties can be well used. For example, this is the case if the
taken off part also includes InGaAs or InAlAs; discontinuities in
electronic bands between the latter material and the InP create
significantly better electronic mobilities in the taking off
layers. Other configurations of donor wafers 10 are possible,
including other Group III-V compounds. Typical applications for
these means of taking off layers include HEMT (High Electron
Mobility Transistor) and HBT (Heterojunction Bipolar Transistor)
implementations. Chemical etching solutions, possibly selective and
adapted to remove some Group III-V materials and not other Group
III-V materials, are preferably used during recycling. Thus, for
example, selective etching of InP is preferably used with a
solution formed of concentrated HCl in order to remove an InP layer
without taking off a subjacent layer of InGaAs.
Example 7
[0221] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate formed of AsGa at its interface with the
overlying buffer structure; a buffer structure made according to
the first technique for making a buffer structure, and including
InGaAs at its interface with the multi-layer structure I; and a
multi-layer structure I formed of InP or
In.sub.xGa.sub.1-xAs.sub.yP.sub.1-y before taking-off.
[0222] With reference to FIG. 1a, the multi-layer structure I
before taking off Preferably includes the pair of the following
layers: a layer 2 made of InGaAs (P) and a layer 3 on layer 2,
layer 3 being formed of substantially relaxed InP and with a
thickness greater than the thickness of a useful layer to be taken
off. This type of donor wafer 10 was described in example 6
above.
[0223] Taking off applies to the part of the multi-layer structure
I above layer 2, and recycling includes selective chemical etching
of layer 3 with a selective etching solution, such as a solution
that includes HF so that almost the entire layer 3 left after
taking-off can be removed, in this case layer 2 behaving like an
etching stop layer.
[0224] In one embodiment, the multi-layer structure I includes
another layer of InP subjacent to layer 2. Taking off then applies
to the part of the multi-layer structure I above this other InP
layer, and recycling includes selective chemical etching of layer 2
with a selective etching solution, such as a solution that includes
Ce.sup.IVH.sub.2SO.sub.4, so that almost the entire layer 2 is
removed, in this case the other subjacent InP layer behaving like
an etching stop layer.
[0225] In another case, the two selective etchings can be done one
after the other in order to remove at least part of layer 3 and to
remove layer 2. In one particular configuration of the multi-layer
structure I, the multi-layer structure I includes several pairs of
these layers 2 and 3. The multi-layer structure I may include only
pairs of layers 2 and 3, for example as shown in FIG. 3. It is then
preferably and convenient to find all taking off formulas involving
one or several layers taken off in one or in several operations,
separated by recycling processes according to the invention
preferably including selective etching between InP and InGaAs
(P).
Example 8
[0226] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate formed of sapphire, SiC, or Si, a buffer
structure made according to the first technique for making a buffer
layer, and a multi-layer structure I formed of nitride layers. The
buffer structure is formed of a metamorphic buffer layer of
Al.sub.xGa.sub.1-x N, where x varies in thickness from 0 to 1
starting from the interface with sapphire, and an additional layer
of GaN to confine dislocation type crystallographic defects.
[0227] The Group III-V GaN, AIN and InN nitrides are useful in
microelectronics, particularly in light emitting devices such as
lasers, for applications such as reading or writing data stored at
high density on compact disks or such as light emitting diodes for
new display technologies. These materials are also suitable for
making high power electronic components, or electronic components
operating at high temperature.
[0228] One method of making the nitride layers included in the
multi-layer structure I is epitaxial growth on the additional layer
of GaN by deposition of Group I organic metals, such as Trimethyl
Gallium, Trimethylamine Alane, or Trimethyl Indium for the
deposition of the GaN, AIN, or InN layers, respectively. This
invention used to transfer several of these nitride layers starting
from the same donor wafer 10 implies a recycling step between each
operation to take off a layer, in order to prepare another layer in
the multi-layer structure I for another taking off operation. Thus,
several techniques, mainly smoothing of layers by chemical etching,
help to achieve this purpose while keeping the structural and
geometric quality of the layer to be taken off intact or almost
intact. One example is a photo etching technique used to etch
layers of GaN, as disclosed in R. T. Leonard et al.,
"Photo-assisted dry etching of GaN", in Applied Physics letters
68(6), Feb. 5 1996.
[0229] In the present example, the multi-layer structure I
including nitrides is similar to that shown in FIGS. 2 and 4. As
shown in FIG. 2a, the multi-layer structure I before taking off
preferably includes a triplet formed of a layer 3A of AIN, a layer
2 of InN, and a layer 3B of GaN. Preferably, the multi-layer
structure I includes another almost identical triplet of layers,
separated from the first triplet by a layer of InN.
[0230] The advantage of this three-layer structure lies in the
choice of materials for which chemical attack means are available
that are significantly different for each of the materials. Thus,
InN has a lower dry etching rate than GaN or AlN if a plasma gas
that includes polarized chlorine, hydrogen, and possibly argon is
injected on the wafer 10, particularly adapting the technical
parameters as follows: power of polarizing radio frequencies
preferably about 400 to 1000 Watts, more preferably about 650
Watts; temperature of about 500.degree. to 1000.degree. K,
preferably closer to 1000.degree.; low pressure on the order of 1
mT; and composition with Cl.sub.2 to H.sub.2 ratio on the order of
2 to 3, for a total fluidic ratio of about 25 sccm.
[0231] The etching selectivity of GaN and AlN compared with InN is
mainly due to the low volatility of InCl.sub.x species compared
with the volatility of species containing Ga and Al. N atoms in
nitrides combine very well with H.sub.2 to form gaseous molecules
of NH.sub.3. With reference to the experimental results obtained by
S. J. Pearton et al. in "Law Bias Electron Cyclotron Resonance
Plasma Etching of GaN, AlN and InN" (Applied Physics Letters
64(17), Apr. 25 1994), the etching ratio of GaN with respect to InN
may be more than 3 to 1, and the etching ratio of AlN with respect
to InN may be of the order of 5 to 1. An etching ratio of GaN with
respect to AlN on the order of 2 to 1 can be obtained, and a dry
etching ratio of InN with respect to AlN of the order on 3 to 2 can
be obtained.
[0232] If taking off is done in the GaN layer, a gas including
polarized chlorine may preferably be used so that the subjacent
layer of InN forms an etching stop layer. If it is not required to
keep the InN layer, dry etching can be applied using a gas
containing CH.sub.2, so that the subjacent layer of AlN forms an
etching stop layer.
[0233] An additional finishing step, for example polishing, may be
used to finish the surface of the layer kept after etching. This
layer kept after etching may then be taken off again. Similarly, if
taking off is done in the InN layer, the residue of the InN layer
can advantageously be dry etched using gas containing CH.sub.2 so
that the InN layer forms a stop layer. If it is not required to
keep the layer made of AlN, dry etching using gas including
chlorine may be used so that the subjacent InN layer forms a stop
layer. Finally, if a layer made of AlN is taken off, dry etching
can advantageously be used using chlorine gas while the subjacent
InN layer forms a stop layer. Several layers may also be taken off
in a single taking off operation, particularly if there are several
triplets (AlN, InN, GaN) separated by an InN layer.
Example 9
[0234] The donor wafer 10 is formed of a substrate 1 formed of a
support substrate formed of sapphire or SiC or Si; an intermediate
layer formed of GaN; a SiO.sub.2 mask; a GaN buffer layer; and a
multi-layer structure I that includes successive layers of
nitrides, including at least one layer of GaN.
[0235] The method of making the buffer layer is as described above
for the fourth technique for making the buffer structure, and
includes anisotropically growing nitride layers, particularly GaN,
using the ELOG technique. The SiO.sub.2 mask used in this
configuration is preferably in the form of bands arranged
periodically on the intermediate layer of GaN, and nearly parallel
to each other. The thickness of each band is typically of the order
of a few tens of a micron, while the width of a band is of the
order of a few microns. The distance separating the bands from each
other is typically about 10 microns or 15 microns. For example,
there could be a network of bands at 13 micron intervals, each band
being 0.2 microns thick and 5 microns wide.
[0236] As described above in a general case, these SiO.sub.2 bands
will cause localized dislocations in the GaN layer(s) deposited
above, close to the free surface of these bands. The thickness of
GaN in which these dislocations are located around the mask then
forms the buffer layer. The layers of GaN or other materials with
lattice parameters similar to the lattice parameters of GaN are
deposited on the buffer layer to form the multi-layer structure I.
The multi-layer structure I includes at least two layers each with
a thickness equal to or greater than the thickness of a useful
layer that is to be taken off. Further information about the method
of making a wafer according to the ELOG process is disclosed in
"MRS Bulletin" May 1998, volume 23, No. 5, Article by Shuji
Nakamura entitled "InVGaN/AlGaN-- Based Laser Diodes with an
Estimated Lifetime of Longer than 10,000 Hours".
[0237] In particular, in this multi-layer structure I, stop layers
with selective chemical etchings such as InN layers as described in
example 8 may be integrated during manufacturing. Thus, after
taking off a layer of GaN, recycling according to the invention may
be include selectively etching the GaN with respect to the
subjacent InN layer using an etching gas containing polarized
chlorine as described in example 8. Other constituents may be added
into the semiconductor layers, such as carbon with a carbon
concentration in the layer significantly less than or equal to
about 50%, preferably less than or equal to about 5%.
[0238] Finally, this invention is not restricted to a donor wafer
10 made of materials presented in the above examples, but also
covers other types of materials belonging to Groups II, III, IV, V
or VI and to alloys belonging to Groups IV-IV, III-V, II-VI. In the
case of alloy materials, the alloys chosen may be binary, ternary,
quaternary, or higher degree. If the donor wafer 10 includes a
buffer layer or a buffer structure, this invention is not limited
to a buffer layer or a buffer structure which has the prime
function of adapting the lattice parameter between two adjacent
structures with different lattice parameters, but also concerns any
buffer layer or buffer structure as defined more generally in this
document. Furthermore, the final structures obtained as a result of
taking off useful layers are not restricted to SGOI, SOI, Si/SGOI
structures, nor are they restricted to structures for HEMT and HBT
transistors nor to structures for applications in lasers.
[0239] It is to be understood that the invention is not to be
limited to the exact configuration as illustrated and described
herein. Accordingly, all expedient modifications readily attainable
by one of ordinary skill in the art from the disclosure set forth
herein, or by routine experimentation therefrom, are deemed to be
within the spirit and scope of the invention as defined by the
appended claims.
* * * * *