U.S. patent application number 10/761877 was filed with the patent office on 2005-07-21 for chemical mechanical polishing method and apparatus for controlling material removal profile.
Invention is credited to Ashjaee, Jalal, Bajaj, Rajeev, Basol, Bulent M..
Application Number | 20050159084 10/761877 |
Document ID | / |
Family ID | 34750281 |
Filed Date | 2005-07-21 |
United States Patent
Application |
20050159084 |
Kind Code |
A1 |
Basol, Bulent M. ; et
al. |
July 21, 2005 |
Chemical mechanical polishing method and apparatus for controlling
material removal profile
Abstract
A material removal apparatus employing a showerhead with
non-planar topography is provided. The showerhead surface includes
a plurality of fluid zones to apply a fluid pressure to a backside
of a polishing pad while a front side of the polishing-pad polishes
a substrate. The varying topography of the showerhead surface and
the resulting variable gap between a backside of a polishing pad
and the non-planar surface of showerhead provide a well-defined
fluid distribution and pressure profile for each zone. Such
well-defined fluid distribution and pressure profiles, in turn,
establish well-defined material removal rates on the substrate as
the polishing pad polishes the substrate.
Inventors: |
Basol, Bulent M.; (Manhattan
Beach, CA) ; Bajaj, Rajeev; (Fremont, CA) ;
Ashjaee, Jalal; (Cupertino, CA) |
Correspondence
Address: |
KNOBBE MARTENS OLSON & BEAR LLP
2040 MAIN STREET
FOURTEENTH FLOOR
IRVINE
CA
92614
US
|
Family ID: |
34750281 |
Appl. No.: |
10/761877 |
Filed: |
January 21, 2004 |
Current U.S.
Class: |
451/41 ;
451/285 |
Current CPC
Class: |
B24B 37/26 20130101;
B24B 37/042 20130101; B24B 37/245 20130101 |
Class at
Publication: |
451/041 ;
451/285 |
International
Class: |
B24B 001/00 |
Claims
We claim:
1. An apparatus for polishing a surface of a workpiece comprising:
a carrier configured to hold the workpiece; a showerhead, having a
non-planar surface, providing a variable gap between the non-planar
surface and the surface of the workpiece; and a polishing pad with
a polishing side and a back side positioned within the variable gap
and configured to polish the surface of the workpiece with the
polishing side when a fluid flow is applied from the non-planar
surface to the back side.
2. The apparatus of claim 1, wherein the fluid flow is applied from
a plurality of fluid flow zones formed in the non-planar
surface.
3. The apparatus of claim 1, wherein the fluid flow zones are
configured to move to cause a change in the topography of the
non-planar surface.
4. The apparatus of claim 3, wherein the fluid zones move during
the polishing of the surface of the workpiece.
5. The apparatus of claim 1, wherein the non-planar surface has a
center high topography.
6. The apparatus of claim 1, wherein the non-planar surface has a
center low topography.
7. The apparatus of claim 2, wherein at least one of the fluid flow
zones is closer to the back side of the polishing pad than the rest
of the fluid zones.
8. The apparatus of claim 2, further comprising ventilation regions
between the fluid flow zones.
9. The apparatus of claim 2, wherein the fluid flow zones are
concentric.
10. The apparatus of claim 2, wherein the fluid flow zones are
elongated zones.
11. The apparatus of claim 1, wherein the fluid flow is applied
from a plurality of fluid openings formed in the fluid flow
zones.
12. The apparatus of claim 4, further comprising a feed back
circuit that in response to a change in a removal profile induces a
change in the-topography of the non-planar surface to yield a
pre-determined removal profile.
13. The apparatus of claim 2, wherein each zone includes a variable
topography.
14. The apparatus of claim 1, wherein a polishing solution is
delivered onto the polishing sid of the polishing pad during the
polishing of the surface of the workpiece.
15. A method of controlling material removal rate from a workpiece
surface using a polishing solution, a pad and a shower head with a
non-planar surface providing a variable gap between the non-planar
surface and the workpiece surface, wherein the pad has a polishing
side and a backside, the method comprising the steps of: holding
the workpiece; placing the polishing pad into the variable gap;
emitting fluid from the non-planar surface onto the backside of the
pad to establish pressure; establishing relative motion between the
pad and the workpiece surface, and removing material from the
workpiece surface with the polishing side of the pad.
16. The method of claim 15, further comprising changing topography
of the non planar surface to vary material removal profile from the
surface of the workpiece.
17. The method of claim 15 wherein the step of emitting fluid
comprises emitting fluid from a plurality of fluid flow zones
placed in the non-planar surface.
18. The method of claim 15 further comprising the step of sensing a
material removal profile during the step of removing and adjusting
the variable gap to control the material removal profile.
Description
FIELD
[0001] The present invention relates to manufacture of
semiconductor integrated circuits and, more particularly to a
method for polishing of conductive layers for planarization and
removal.
BACKGROUND
[0002] Chemical mechanical polishing (CMP) of materials has
important and broad application in the semiconductor industry. CMP
is a widely used technique for planarizing metals and dielectrics
as well as other types of layers on semiconductor wafers. CMP is
often used to flatten/polish the profiles that build up in
multilevel metal interconnect fabrication schemes.
[0003] In a typical CMP process, a substrate such as a
semiconductor wafer is mounted on a substrate carrier, often called
a head. The wafer surface to be polished is pressed against a
polishing pad surface and the pad and the head are moved with
respect to each other. This is typically done by rotating the
wafer, moving the pad or both. The polishing pad may be a
conventional polishing pad or a fixed abrasive polishing pad.
Conventional or polymeric polishing pads are usually employed along
with polishing slurries including abrasive particles and chemically
reactive agents. The surface of a fixed abrasive polishing pad
typically includes abrasive particles embedded in a matrix
material. During processing, imbedded abrasive particles perform
polishing with the help of a polishing chemistry, which may or may
not contain abrasive particles.
[0004] FIG. 1 illustrates an exemplary prior-art CMP system 10 that
includes a polishing pad 12, which may be moved with respect to the
wafer 14 that is held by a wafer carrier 16. The polishing pad is
placed on a platen 18 having a flat surface in which an array of
built-in pressure zones 20 is formed. Pressure zones provide
pressurized fluid such as gas to the under-side of the polishing
pad to act as a cushion and prevent the pad from touching the
platen during processing. By applying a varying gas pressure to the
backside of the polishing pad from various zones, polishing rate on
the corresponding locations of the wafer surface may be changed
while pressing the surface of the wafer against the pad surface.
The pressure zones 20 are often formed concentrically to apply
local pressure on different sections on the surface of the wafer.
During the CMP process, the wafer carrier 16 can also be rotated
while the pad 12 is moved. The wafer 14 is pushed against the
polishing pad 12 while rotating to accomplish material removal.
Depending on the pressure distribution profile created on the
backside of the pad, polishing rate of the corresponding regions on
the wafer surface may be varied to achieve desired polishing on the
wafer. For example, by increasing the pressure about the center of
the wafer, higher polishing rates may be obtained at the center of
the wafer surface. However, in such systems, pressure applied by
the pressure zones of the platen onto different regions of the
wafer is not entirely independent from one another. Pressure from
neighboring pressure zones may interfere with each other. In fact,
theoretically the center of the wafer should always see the highest
pressure in the setup of FIG. 1. Therefore, control for individual
zones may not be very good.
[0005] As the brief review above shows, a need exists for a
chemical mechanical polishing (CMP) system, which can provide
accurate, stable and controllable polishing rates on various parts
of a wafer.
SUMMARY
[0006] The present invention employs a flow assembly with a
non-planar surface profile to apply fluid flow to a backside of a
polishing pad to cause a polishing side of the polishing pad be
forced against a workpiece surface during the chemical mechanical
polishing of the workpiece. The fluid flow is applied to the
polishing pad using a plurality of fluid zones placed in the
non-planar flow assembly surface. The fluid flow zones may be
arranged into any configuration or array in the flow assembly
surface such as concentric or linear. Spaces or regions provided in
between the zones may be used to substantially isolate the zones
from the neighboring zones and may establish ventilation regions or
drains for the fluid leaving the individual zones of the flow
assembly.
[0007] The flow assembly surface may have any profile or
topography, such as a raised profile or a recessed profile, which
vary the gap between the flow assembly surface and the pad or the
workpiece surface at selected locations. The gap between the
backside of the polishing pad and the flow assembly surface of the
present invention is defined as a variable gap. The varying profile
of the surface of the flow assembly and the resulting variable gap
between the backside of the pad and the surface of flow assembly
provide a well-defined fluid distribution and pressure profile for
each zone. Such well-defined fluid distribution and pressure
profiles establish well defined polishing rates on the workpiece
surface as the polishing pad polishes the workpiece surface.
[0008] In one embodiment of the present invention, material removal
rate from the workpiece surface can be controlled by actively
varying the flow assembly surface profile or topography by moving
the fluid flow zones with respect to the pad or the workpiece
surface, which adjusts the variable gap. In another embodiment, the
material removal rate can be controlled by using a flow assembly
with a fixed surface profile or topography, which keeps a fixed
variable gap which is shaped by the fixed non-planar flow assembly
surface and the polishing pad.
[0009] Accordingly in one aspect of the present invention, an
apparatus for polishing a surface of a workpiece includes a carrier
configured to hold the workpiece, a showerhead, having a non-planar
surface, providing a variable gap between the non-planar surface
and the surface of the workpiece and a polishing pad with a
polishing side and a back side positioned within the variable gap.
The polishing pad is configured to polish the surface of the
workpiece with the polishing side when a fluid flow is applied from
the non-planar surface to the backside. The fluid flow is applied
from a plurality of fluid flow zones formed in the non-planar
surface and the fluid flow zones are configured to move to cause a
change in the topography of the non-planar surface. A feed back
circuit induces a change in the topography of the non-planar
surface in response to a change in a removal profile to yield a
pre-determined removal profile.
[0010] In another aspect of the present invention, a method of
controlling material removal rate from a workpiece surface is
provided. The method includes the steps of holding the workpiece
with a carrier, placing the polishing pad into the variable gap
provided between a non-planar surface of a showerhead and the
workpiece surface; emitting fluid from the non-planar surface of
the showerhead onto backside of the pad to establish pressure;
establishing relative motion between the pad and the workpiece
surface and removing material from the workpiece surface with
polishing side of the pad.
[0011] These and other features and advantages of the present
invention will be described below with reference to the associated
drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
[0012] FIG. 1 is a schematic view of a prior art chemical
mechanical polishing apparatus;
[0013] FIG. 2A is a schematic side view of an embodiment of a
chemical mechanical polishing apparatus of the present invention
including a showerhead with movable fluid flow zones;
[0014] FIG. 2B is a schematic plan view of the shower head shown in
FIG. 2A;
[0015] FIG. 3A is a schematic side view of the chemical mechanical
polishing apparatus of the present invention shown in FIG. 2A,
wherein the fluid flow zones of the showerhead have been moved into
a center high configuration to remove more material from center of
a wafer;
[0016] FIG. 3B is a graph showing variation of material removal
across the diameter of the wafer surface when the shower head in
FIG. 3A with center high configuration is used;
[0017] FIG. 4A is a schematic side view of the chemical mechanical
polishing apparatus of the present invention shown in FIG. 2A,
wherein the fluid flow zones of the showerhead have been moved into
a center low configuration to remove more material from edge of a
wafer;
[0018] FIG. 4B is a graph showing variation of material removal
across the diameter of the wafer surface when the shower head in
FIG. 4A with center low configuration is used;
[0019] FIG. 5 is a schematic side view of an embodiment of a
chemical mechanical polishing apparatus of the present invention
including a showerhead with stepped center high surface with fixed
fluid flow zones;
[0020] FIG. 6 is a schematic side view of an embodiment of a
chemical mechanical polishing apparatus of the present invention
including a showerhead with convex surface with fixed fluid flow
zones;
[0021] FIG. 7 is a schematic side view of an embodiment of a
chemical mechanical polishing apparatus of the present invention
including a showerhead with stepped center low surface with fixed
fluid flow zones;
[0022] FIG. 8 is a schematic side view of an embodiment of a
chemical mechanical polishing apparatus of the present invention
including a showerhead with concave surface with fixed fluid flow
zones;
[0023] FIG. 9 is a schematic plan view of a shower head having
elongated fluid flow zones; and
[0024] FIG. 10 is a schematic side view of a showerhead with fluid
flow zones having variable surface topography.
DETAILED DESCRIPTION
[0025] CMP system of the present invention applies fluid flow from
a flow assembly separated from a backside of a polishing pad with a
variable gap to cause a polishing or processing side of the
polishing pad be forced against a workpiece surface during the
chemical mechanical polishing of the workpiece. The fluid flow may
be applied to the polishing pad using a flow assembly that has a
plurality of fluid flow zones placed in a flow assembly surface.
The fluid flow zones may be arranged into any configuration or
array in the flow assembly surface such as concentric or linear.
Spaces or regions provided in between the fluid flow zones may be
used to substantially isolate the fluid flow zones from the
neighboring zones and may establish ventilation regions or drains
for the fluid leaving the individual zones of the flow
assembly.
[0026] The flow assembly surface may have any profile or
topography, such as a raised profile or a recessed profile, which
vary the gap between the flow assembly surface and the pad or the
workpiece surface at selected locations. Accordingly, when the
polishing pad is placed over the flow assembly, the gap between one
or more zones and the backside of the polishing pad may be smaller
than the gap between the backside of the polishing pad and the rest
of the zones. Therefore, the gap between the backside of the
polishing pad and the flow assembly surface of the present
invention is defined as a variable gap. The variable gap between
the backside of the polishing pad and the fluid flow zone forming
the highest point on the flow assembly surface may be nearly zero
or more than zero. The varying profile of the surface of the flow
assembly and the resulting variable gap between the backside of the
pad and the surface of flow assembly provide a well-defined fluid
distribution and pressure profile for each fluid flow zone. Such
well-defined fluid distribution and pressure profiles, in turn,
establish well defined polishing rates on the workpiece surface as
the polishing pad polishes the workpiece surface.
[0027] In one embodiment of the present invention, material removal
rate from the workpiece surface can be controlled by actively
varying the flow assembly surface profile or topography by moving
the fluid flow zones with respect to the pad or the workpiece
surface, which adjusts the variable gap. In another embodiment, the
material removal rate can be controlled by using a flow assembly
with a fixed surface profile or topography, which keeps a fixed
variable gap which is shaped by the fixed flow assembly surface and
the polishing pad. Therefore, in this application, a gap between
the flow assembly surface and the polishing pad is a variable gap
which may be an adjustable or fixed variable gap. In either
embodiment, in addition to variable gap feature, fluid flow rates
at each zone may also be varied, in which case the process window
within which removal rates are varied may be further widened.
[0028] In other words flow rate control and variable gap control
become two important process knobs that can be varied independent
from each other to control the profile of removal rate. After
pushing the polishing pad toward the workpiece surface, the fluid
from the zones exits the assembly, partially through the drain
region if drains are used, thus reducing fluid flow effects on the
neighboring zones. In this design, passages or drains between the
zones for the used fluid may or may not be employed because the
variable gap itself introduces differences between the pressures
over the various zones with different gap values. FIGS. 2A through
4B exemplify two embodiments of flow assemblies or showerheads. In
these embodiments, fluid flow zones z.sub.1, z.sub.2, z.sub.3 and
z.sub.4 of the showerheads are movable. The gap between the
polishing pad and the surface of the flow assembly is an adjustable
variable gap, which may be adjusted by moving the zones with
respect to the polishing pad. It should be noted that in these
examples each zone is connected to a different fluid source.
However, it is possible to practice this invention by connecting
two or more or even all the zones to the same fluid source and then
varying the adjustable gap to control the removal rate
profiles.
[0029] FIGS. 2A-4B exemplify a chemical mechanical polishing system
100 having an embodiment of a flow assembly 102 or a showerhead of
the present invention. As shown in FIG. 2A, the showerhead 102
comprises a first fluid flow zone z.sub.1, a second fluid flow zone
z.sub.2, a third fluid flow zone z.sub.3 and a fourth fluid flow
zone z.sub.4. In this embodiment, the showerhead 102 has four
exemplary fluid flow zones, although the showerhead 102 may have
any number of fluid flow zones to perform the present invention. As
will be described more fully below, each fluid flow zone
z.sub.1-z.sub.4 provides a fluid flow, such as airflow, under a
polishing belt 104 or a polishing pad, and force the polishing pad
104 against a front surface 106 of a wafer 108. Each fluid flow
zone is configured to push the polishing pad onto definite or
corresponding regions of the front surface 106 of the wafer, i.e.,
each zone has an approximate corresponding location on the front
surface 106. If the air flow is kept constant for each fluid flow
zone, the distance or the gap between a fluid flow zone and the
polishing pad affects the force applied onto the front surface of
the wafer by that individual fluid flow zone. Therefore, material
removal rate from the corresponding locations on the front surface
106 depends on the magnitude of the gap between the polishing pad
and the fluid flow zones.
[0030] As exemplified with dotted line, zones z.sub.1 and z.sub.2,
may each be moved with respect to the polishing pad 104 using a
moving mechanism (not shown) to vary the gap between these zones
and the pad or the front surface 106 of the wafer. As illustrated
in FIGS. 2A-4B, in this embodiment, the gap between the polishing
pad 104 and each fluid flow zone z.sub.1-z.sub.4 can be varied to
control the material removal rate on a front surface 106 of a wafer
108, and to obtain desired material removal profiles on the front
surface 106. However, as will be described with reference to FIGS.
5-8, a shower head may also be pre-shaped with a desired profile
having elevated or descended zones to achieve desired material
removal profiles on a front surface of a wafer. Alternately, a
design comprising pre-shaped zones with capability to move may also
be employed.
[0031] During the material removal process, a wafer carrier 110
retains the wafer 108, preferably at a fixed elevation so that only
the distance between the back surface of the polishing pad and the
fluid flow zones vary. The polishing pad 104 may be any of a
fixed-abrasive polishing pad, or a more standard polymeric
polishing pad. The polishing pad 104 includes a first surface or a
process surface 112 and a second surface or a back surface 114. The
polishing pad 104 may preferably be tensioned by a tensioning
mechanism (not shown). Process surface 112 of the polishing pad 104
polishes the surface 110 of the wafer during the CMP process.
Material removal from the front surface 106 may be performed using
a polishing solution or slurry, which may or may not contain
abrasive particles. The front surface 106 of the wafer 108 may
include a conductive layer such as copper or a dielectric layer
that the material removal process of the present invention is
applied. The polishing pad 104 may be moved linearly, preferably
bi-linearly, using a moving mechanism (not shown). Alternately, the
polishing pad may be round and may be rotated like in standard
rotary CMP tools. Exemplary CMP systems using bi-linear motion to
polish surfaces are exemplified in the following patents. U.S. Pat.
No. 6,103,628 entitled Reverse Linear Polisher with Loadable
Housing, U.S. Pat. No. 6,464,571 Polishing Apparatus and Method
with Belt Drive System Adapted to Extend the Lifetime of a
Refreshing Polishing Belt Provided Therein, and U.S. Pat. No.
6,468,139 Chemical Mechanical Polishing Apparatus and Method with
Loadable Housing, which are owned by the assignee of the present
invention.
[0032] During the CMP process of the present invention, an airflow
through the showerhead 102 is applied onto the back surface 114 of
the polishing pad 104. Application of the airflow to the polishing
pad 104 may be performed using a plurality of fluid openings 116
formed through the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and
z.sub.4. The fluid openings 116 may be arranged into any
configuration or array with ventilation openings 118 among them.
The ventilation openings 118 vent out the air used to push the pad
against the surface of the workpiece, and optionally the
ventilation openings may be connected to a vacuum system (not
shown) for more efficient ventilation. The fluid openings 116 are
formed through the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and
z.sub.4 to create a fluid flow distribution profile on the
showerhead 102. As shown in FIG. 2B, the fluid flow zones
z.sub.1-z.sub.4 may be formed concentrically and each zone may be
connected to a fluid flow controller (not shown) to regulate fluid
flow for each zone. In this embodiment, ventilation openings 118
are depicted as circular slits or circular gaps separating each
zone. However, they may also be formed as holes.
[0033] In accordance with the principles of the present invention,
by varying the distance between the individual fluid flow zones
z.sub.1-z.sub.4 and the polishing pad 104, the profile of material
removal rate on corresponding areas of the front surface 106 of the
wafer is effectively controlled and sharper removal profiles are
obtained. FIG. 3A exemplifies a center high configuration of the
showerhead, which is formed by mechanically moving the zone z.sub.1
and z.sub.2 closer to the back surface 114 of the polishing pad
104. The center high configuration aims at removing more material
from the center region of the front surface of the wafer compared
to edge. In this configuration, surface s.sub.1 of the first fluid
flow zone z.sub.1 is 0.5 to 5 mils, preferably 1 to 2 mils, higher
than the surface s.sub.2 of the second fluid flow zone z.sub.2.
Similarly, the surface s.sub.2 is 0.5 to 5 mils, preferably 1 to 2
mils, higher than the surfaces s.sub.3 and s.sub.4 of the third
fluid flow zones z.sub.3 and the fourth fluid flow zone z.sub.4.
This vertical distance between the surfaces of the fluid flow zones
will be called step height herein below.
[0034] As mentioned above, airflow towards the back surface 114 of
the polishing pad 104 pushes the pad against the front surface 106
of the wafer 108 that is held and rotated by the wafer carrier 110.
Accordingly, in this center high configuration, air from the zone
z.sub.1applies more force per unit area to the polishing pad and
the corresponding polished region on the front surface 106 of the
wafer 108 when the first zone z.sub.1 is elevated and placed at a
first elevated position at proximity of the back surface 114 of the
polishing pad 104. At the first elevated position, the gap between
the back of the polishing pad and top surface of the first fluid
flow zone is smallest in comparison to the other fluid flow zones
of the shower head 102. The gap between the backside of the
polishing pad and top surface of the first fluid flow zone or the
highest point on the showerhead 102 may be nearly zero or
microscopic. At this position, due to the small gap, the air from
the first fluid flow zone z.sub.1 is very effective and causes the
most material removal from the front surface 106 of the wafer.
Since the first fluid flow zone z.sub.1is across a center region of
the wafer 108, highest material removal rate occurs at the center
region of the front surface 106.
[0035] The second fluid flow zone z.sub.2 is placed in a second
elevated position in which the second fluid flow zone z.sub.2
applies less force onto the polishing pad 104 than the force
applied by the first fluid flow zone z.sub.1 at the first position.
In the second elevated position, the gap between the surface of the
second fluid flow zone is larger then the gap between the surface
of the first fluid flow zone z.sub.1 and the back surface 114 of
the polishing pad 104. The force applied by the air from the second
fluid flow zone z.sub.2 causes less material removal from the
corresponding location on the front surface 106, which surrounds
the center region of the front surface 106, due to the larger gap.
Similarly, the third and the fourth fluid flow zones z.sub.3 and
z.sub.4 cause less material removal from an edge region of the
front surface 106 due to their relatively distant third and fourth
elevated positions to the back surface 114 of the polishing pad
104. The step height between the neighboring zones can be adjusted
to obtain desired variations of the center high configuration of
the showerhead 102 and the resulting material removal profiles.
[0036] FIG. 3B illustrates an exemplary material removal profile
curve P.sub.H for the wafer 108 when the wafer is polished with the
center high shower head configuration shown in FIG. 3A. This
material removal profile may be changed by varying the step heights
between the fluid flow zones. For example the curve may be made
more convex, by increasing the step heights between the fluid flow
zones z.sub.1-z.sub.2, z.sub.2-z.sub.3 and z.sub.3-z.sub.4.
Similarly, the profile curve may be made more flat by decreasing
the step heights between the same zones. It is also possible to
vary amount of fluid flow from the selected fluid flow zones to
further adjust the material removal profile. In fact it is possible
to use the center-high configuration shown in FIG. 3A and get a
flat removal profile by increasing flows to the outer zones.
Therefore, this unique design reduces high sensitivity of removal
rates to flow rate and opens up the process window for adjusting
the removal profiles at will.
[0037] An alternative center-low configuration of the shower head
102 can be seen in FIG. 4A, which can be achieved by moving the
first and second fluid flow zones z.sub.1, z.sub.2 away from the
back surface 114 of the polishing pad 104 while leaving the third
and fourth fluid flow zones z.sub.3, z.sub.4 closer to the back
surface 114 of the polishing pad. The center low configuration aims
at removing more material from the edge region of the front surface
if all flows at all zones are equivalent. In order to achieve
center low removal profile, the first fluid flow zone z.sub.1 is
moved into a first declined position, which locates the first fluid
flow zone away from the polishing pad. At the first declined
position, the gap between the back of the polishing pad and top
surface of the first fluid flow zone is largest in comparison to
the other fluid flow zones of the showerhead 102. At this position,
due to the large gap, the air from the first fluid flow zone
z.sub.1 is not effective and causes a smaller amount of material
removal from the center region of the front surface 106.
[0038] The second fluid flow zone z.sub.2 is placed in a second
declined position in which the second fluid flow zone z.sub.2
applies more force onto the polishing pad 104 than the force
applied by the first fluid flow zone z.sub.1 at the first declined
position. In the second declined position, the gap between the
surface of the second fluid flow zone is smaller then the gap
between the surface of the first fluid flow zone z.sub.1 and the
back surface 114 of the polishing pad 104. The force applied by the
air from the second zone z.sub.2 causes more material removal from
the corresponding location on the front surface 106, which
surrounds the center region of the front surface 106, due to the
smaller gap. However, the third and the fourth fluid flow zones
z.sub.3 and z.sub.4 cause the highest material removal from an edge
region of the front surface 106 due to their smaller gap with the
back surface 114 of the polishing pad 104 in the third and fourth
elevated positions. The step height between the neighboring zones
can be adjusted to obtain desired variations of the center low
configuration of the showerhead 102 and the resulting material
removal profiles. In this configuration, the step height range
between the fluid flow zones z.sub.1-z.sub.2, z.sub.2-z.sub.3 and
z.sub.3-z.sub.4 can be between the 0.1 to 10 mils, preferably 0.5
to 2 mils.
[0039] FIG. 4B illustrates an exemplary material removal profile
curve P.sub.L for the wafer 108 when the wafer is polished with the
center low shower head configuration shown in FIG. 4A. This profile
may be changed by varying the step heights between the fluid flow
zones. For example the curve P.sub.L may be made more concave, by
increasing the step heights between the zones z.sub.1-z.sub.2,
z.sub.2-z.sub.3 and z.sub.3-z.sub.4. Similarly, the profile curve
P.sub.L may be made more flat by decreasing the step heights
between the same zones. Profile may also be changed by changing the
individual flows as discussed in association with FIG. 3B.
[0040] In the above embodiments, the position of the zones can be
configured using smart systems that can monitor removal profile
during the material removal process. Accordingly, by utilizing an
electronic feedback mechanism or control system, gaps may be
automatically adjusted to get the desired removal profile. Such
profile may be changed in-situ during the process or before
processing each wafer.
[0041] FIGS. 5 through 8 exemplify various configurations of
pre-shaped or fixed surface profile flow assemblies or showerheads.
In these embodiments, fluid flow zones z.sub.1, z.sub.2, z.sub.3
and z.sub.4 of the showerheads are integrated and are not movable,
although they could also be made movable. The gap between the
polishing pad and the surface of the flow assembly is a fixed
variable gap, which is shaped by the fixed non-mobile profile or
topography of the flow assembly surface and the back surface of the
polishing pad. FIG. 5 shows a center high showerhead 200 having a
center high zone profile, which is formed using a predetermined
step height between the neighboring zones. Air holes 202 are formed
through the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and z.sub.4,
and ventilation openings 204 are placed between the fluid flow
zones. In this embodiment, the fluid zones are shaped as radially
descending steps. A top surface 201 of the showerhead 200 has
generally a stepped convex shape. Therefore, the gap between the
top surfaces of the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and
z.sub.4 and the back surface 114 of the polishing pad radially
expands, being smallest at the first fluid flow zone z.sub.1 but
largest at the fourth fluid flow zone z.sub.4. This characteristic
of the showerhead 200 can be seen in an alternative center high
showerhead 300 shown in FIG. 6. In this alternative embodiment,
rather than the step structure shown in FIG. 5, top surfaces of the
zones z.sub.1-z.sub.4 are combined into a convex surface 301. Air
holes 302 are formed through the fluid flow zones z.sub.1, z.sub.2,
z.sub.3 and z.sub.4, and ventilation openings 304 are placed
between the fluid flow zones. Use of the shower heads 200 and 300
give similar center high material removal characteristics
demonstrated by the curve P.sub.H in FIG. 3B. This profile may be
changed by varying the step heights between the fluid flow zones,
the curvature of the surface 301 or the flows in individual
zones.
[0042] FIG. 7 shows a center low fixed showerhead 400 having a
center low zone profile, which is formed using a predetermined step
height between the neighboring zones. Air holes 402 are formed
through the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and z.sub.4,
and ventilation openings 404 are placed between the fluid flow
zones. In this embodiment, the fluid zones are shaped as radially
ascending steps. A top surface 401 of the showerhead 400 has
generally a stepped concave shape. Therefore, the gap between the
top surfaces of the fluid flow zones z.sub.1, z.sub.2, z.sub.3 and
z.sub.4 and the back surface 114 of the polishing pad radially
narrows down, being largest at the first fluid flow zone z.sub.1
but smallest at the fourth fluid flow zone z.sub.4. This
characteristic of the showerhead 400 can be seen in an alternative
center low showerhead 500 shown in FIG. 8. In this alternative
embodiment, rather than the step structure shown in FIG. 7, top
surfaces of the zones z.sub.1-z.sub.4 are combined into a concave
surface 501. Air holes 502 are formed through the fluid flow zones
z.sub.1, z.sub.2, z.sub.3 and z.sub.4, and ventilation openings 504
are placed between the fluid flow zones. Use of the shower heads
400 and 500 gives similar center low material removal
characteristics demonstrated by the curve P.sub.L in FIG. 4B. This
profile may be changed by varying the step heights between the
fluid flow zones, the curvature of the surface 501, or the flows in
individual zones.
[0043] Although in the above embodiments flow assemblies are
defined as round with concentric zones, a showerhead 600 may be
elongated, for example shaped as a rectangle, as shown in FIG. 9.
Zones z.sub.1-z.sub.4 may be shaped as rectangular strips or bars
having fluid openings 602. As in the above embodiments, ventilation
openings 604 or slits can be between the zones z.sub.1-z.sub.4.
Zones can be movable or fixed having center high or center low
configurations. A cross section of the showerhead 600, taken along
the line B, can be any of the shower head cross sections or side
views shown in FIGS. 2A, 3A, 4A and 5-8. In this embodiment, the
gap between surface of the shower head 600 and the polishing pad
held above it may be an adjustable variable gap or a fixed variable
gap, which are described above.
[0044] FIG. 10 exemplifies an alternative flow assembly or
showerhead 700 placed under a polishing pad 702. Zones
z.sub.1-z.sub.2 may preferably be separated by ventilation openings
703, although ventilation openings may not be used. In showerhead
700, each exemplary fluid zone z.sub.1-z.sub.2 has a variable
topography itself such as high surfaces S.sub.1 and low surfaces
S.sub.2. In this example, due to the variable topography of the
zones, each zone z.sub.1-z has its own variable gap with the
backside of the pad 702.
[0045] In the above showerhead embodiments, depending on the
vertical position of the fluid flow zones, the gap established
between the showerhead and the back surface of the polishing pad
varies. As described above, non-planar top surface of the
showerhead varies the gap between the top surface of the showerhead
and polishing pad. For example, among many others, the gap can be
large at the edges but smaller at the center of the showerheads or,
alternatively, the gap can be smaller at the edges but large at the
center at the showerheads. The gap may be nearly zero between the
highest point on the showerhead and the backside of the polishing
pad. As opposed to the prior art planar top surface platens,
non-planar top surface character of the showerheads and resulting
gap variations provide escape passages for the used air. This is
not possible with the prior art systems. Therefore, in the above
embodiments, the use of ventilation openings is optional and the
showerheads can be manufactured without ventilation openings.
Although the present invention is described using a CMP example,
the above embodiments can be used to perform an electrochemical
mechanical polishing (ECMP) process. In ECMP, during the material
removal with a polishing pad, an electrical potential difference is
applied between the conductive surface and a cathode electrode
while an electropolishing solution wets both. The cathode may be
the showerhead or a separate electrode.
[0046] Accordingly, the present invention provides substantially
enhanced control for each zone. The present invention provides
distinct fluid flow rate distribution profiles. Such well-defined
and uniform fluid distribution, in turn, establishes well-defined
polishing rates on the substrate as the polishing pad polishes the
workpiece surface.
[0047] Although various preferred embodiments and the best mode
have been described in detail above, those skilled in the art will
readily appreciate that many modifications of the exemplary
embodiment are possible without materially departing from the novel
teachings and advantages of this invention.
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