U.S. patent application number 10/748190 was filed with the patent office on 2004-08-05 for positive resist composition and base material carrying layer of the positive resist composition.
This patent application is currently assigned to TOKYO OHKA KOGYO CO., LTD.. Invention is credited to Endo, Koutaro, Komano, Hiroshi, Ogata, Toshiyuki.
Application Number | 20040152860 10/748190 |
Document ID | / |
Family ID | 18732157 |
Filed Date | 2004-08-05 |
United States Patent
Application |
20040152860 |
Kind Code |
A1 |
Ogata, Toshiyuki ; et
al. |
August 5, 2004 |
Positive resist composition and base material carrying layer of the
positive resist composition
Abstract
A positive resist composition includes (A) an alkali-soluble
polysiloxane resin, (B) an acid generator composed of a compound
which generates an acid upon irradiation of active light or radiant
ray, and (C) a compound in which at least one hydrogen atom of
phenolic hydroxyl group or carboxyl group is substituted with an
acid-decomposable group. This positive resist composition is useful
for processes using F.sub.2 excimer laser (157 nm),
extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and
other light sources having wavelengths equal to or shorter than
that of KrF excimer laser, and has high definition and can form
resist patterns with good sectional shapes. A base material
carrying a layer of the positive resist composition is also
useful.
Inventors: |
Ogata, Toshiyuki; (Kanagawa,
JP) ; Endo, Koutaro; (Kanagawa, JP) ; Komano,
Hiroshi; (Kanagawa, JP) |
Correspondence
Address: |
SUGHRUE, MION, ZINN, MACPEAK & SEAS
2100 Pennsylvania Avenue, N.W.
Washington
DC
20037
US
|
Assignee: |
TOKYO OHKA KOGYO CO., LTD.
|
Family ID: |
18732157 |
Appl. No.: |
10/748190 |
Filed: |
December 31, 2003 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
|
|
10748190 |
Dec 31, 2003 |
|
|
|
09922723 |
Aug 7, 2001 |
|
|
|
Current U.S.
Class: |
528/35 ;
430/270.1; 430/326; 430/905; 528/10; 528/33 |
Current CPC
Class: |
G03F 7/0392 20130101;
Y10S 430/106 20130101; Y10S 430/115 20130101; G03F 7/0757
20130101 |
Class at
Publication: |
528/035 ;
528/010; 528/033; 430/270.1; 430/905; 430/326 |
International
Class: |
C08G 077/00; C08G
077/04; C08G 077/60; G03C 001/73; C08G 077/42 |
Foreign Application Data
Date |
Code |
Application Number |
Aug 9, 2000 |
JP |
2000-240871 |
Claims
What is claimed is:
1. A polysiloxane resin comprising (a1) a siloxane unit containing
an alkali-soluble group, and (a2) an arylsilsesquioxane unit
containing an alkali-insoluble group, said alkali-insoluble group
having no acid-decomposable group.
2. A polysiloxane resin according to claim 1, wherein the
alkali-soluble group of said siloxane unit (a1) is at least one of
hydroxyl group and carboxyl group.
3. A polysiloxane resing according to claim 2, wherein, in said
siloxane unit (a1), the alkali-soluble group is bonded to the
silicon atom of a siloxane group through at least one group
selected from the group consisting of alkylene groups,
cycloalkylene groups and aralkylene groups.
4. A polysiloxane resin according to claim 3, wherein said siloxane
unit (a1) is a hydroxybenzylsilsesquinoxane unit.
5. A polysiloxane resin according to claim 1, wherein said siloxane
unit (a2) is a phenylsilsesquioxane unit.
6. A polysiloxane resin according to claim 1, wherein a molar ratio
of the unit (a1) to the unit (a2) is from 1:9 to 9:1.
7. A polysiloxane resin according to claim 1, wherein the resin has
a weight average molecular weight of from 1000 to 100000.
Description
[0001] This is a divisional of application Ser. No. 09/922,723
filed Aug. 7, 2001; the disclosure of which is incorporated herein
by reference.
BACKGROUND OF THE INVENTION
FIELD OF THE INVENTION
[0002] The present invention relates to a positive resist
composition and a base material carrying a resist layer composed of
the positive resist composition.
DESCRIPTION OF THE RELATED ART
[0003] Semiconductor devices are more and more being intensified in
the degree of integration in recent years. The mass production of
large-scale integrated circuits (LSIs) using 0.18-.mu.m design
rules had been already launched, and the mass production of LSIs
using 0.15-.mu.m design rules was launched at the end of 2000.
[0004] In the lithography process for such semiconductors, attempts
are made to put LSIs using about 0.13-.mu.m design rules into
practical use. Such attempts include the use of a chemically
amplified positive or negative resist as the resist; the
combination use of the chemically amplified positive or negative
resist with an organic or inorganic anti-reflection coating;
improvements in exposure mask such as the use of a half-tone mask
and Levenson mask; and improvements in exposure equipment such as
annular illumination, scanning technique, and the use of lenses
with higher numerical apertures.
[0005] A silicon-containing resist is one of hopeful candidates for
use in next-generation or next-to-next-generation lithography
processes using 0.15-.mu.m or shorter design rules. Such
silicon-containing resists have satisfactory dry etching resistance
and have been widely reported.
[0006] For example, Japanese Patent Laid-Open Nos. 8-334900,
8-334901 and 9-87391 propose chemically amplified positive resist
compositions each comprising an acid generator, and a polysiloxane
in which part of hydrogen atoms of hydroxyl groups in
polyhydroxybenzylsilsesquioxane is protected with an acid-unstable
group.
[0007] However, such binary system positive resists comprising
polyhydroxybenzylsilsesquioxane having an acid-unstable group in
combination with an acid generator are not satisfactory in
definition and resist pattern shape and should be improved.
SUMMARY OF THE INVENTION
[0008] Accordingly, an object of the present invention is to
provide a positive resist composition that is useful in processes
using F.sub.2 excimer laser (157 nm), extreme-ultraviolet rays
(EUV, vacuum ultraviolet rays; 13 nm) and other light sources
having wavelengths equal to or shorter than that of KrF excimer
laser, and has high definition and can form resist patterns with
good sectional shapes, as well as to provide a base material
carrying a resist layer composed of the positive resist
composition.
[0009] Specifically, the present invention provides, in an aspect,
a positive resist composition including (A) an alkali-soluble
polysiloxane resin, (B) an acid generator composed of a compound
which generates an acid upon irradiation of active light or radiant
ray, and (C) a compound in which at least one hydrogen atom of
phenolic hydroxyl group or carboxyl group is substituted with an
acid-decomposable group.
[0010] In the positive resist composition, Ingredient (A) is
preferably an alkali-soluble polysiloxane resin including (a1) a
siloxane unit containing an alkali-soluble group, and (a2) a
siloxane unit containing an alkali-insoluble group, which
alkali-insoluble group has no acid-decomposable group.
[0011] More preferably, the alkali-soluble group of the siloxane
unit (a1) is at least one of hydroxyl group and carboxyl group.
[0012] In the siloxane unit (a1), the alkali-soluble group is
preferably bonded to the silicon atom of a siloxane group through
at least one group selected from among alkylene groups,
cycloalkylene groups and aralkylene groups.
[0013] The siloxane unit (a1) is more preferably a
hydroxybenzylsilsesquio- xane unit.
[0014] The alkali-insoluble group having no acid-decomposable group
of the siloxane unit (a2) is preferably at least one selected from
among alkyl groups, cycloalkyl groups, aryl groups and aralkyl
groups.
[0015] The siloxane unit (a2) is more preferably a
phenylsilsesquioxane unit.
[0016] Preferably, Ingredient (C) in the positive resist
composition is a compound in which at least one hydrogen atom of
the hydroxyl group or carboxyl group of a compound of following
Formula (I) is substituted with an acid-decomposable group, which
acid-decomposable group is selected from among
tertiary-alkyloxycarbonyl-substituted alkyl groups,
tertiary-alkyloxycarbonyl groups, tertiary-alkyl groups, cyclic
ether groups and alkoxy-substituted alkyl groups: 1
[0017] wherein Z is a hydroxyl group or a carboxyl group; each of
R.sup.1, R.sup.2 and R.sup.3 is independently a hydrogen atom, a
hydroxyl group, a halogen atom, an alkoxy group having from 1 to 5
carbon atoms, or a linear, branched or cyclic alkyl group having
from 1 to 6 carbon atoms; A is a single bond or a divalent organic
group selected from the group consisting of alkylene groups each
having from 1 to 5 carbon atoms, alkylidene groups each having from
2 to 5 carbon atoms, alkylene groups each having from 1 to 5 carbon
atoms and further having a carboxyl group, alkylidene groups each
having from 2 to 5 carbon atoms and further having a carboxyl
group, a carbonyl group, and groups of the following formulae:
2
[0018] R.sup.4 is a hydrogen atom or an alkyl group having from 1
to 5 carbon atoms; each of R.sup.5 and R.sup.6 is independently a
hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group
having from 1 to 5 carbon atoms, or an alkoxy group having from 1
to 5 carbon atoms; each of R.sup.7 and R.sup.8 is independently an
alkyl group having from 1 to 5 carbon atoms; each of R.sup.9 and
R.sup.10 is independently a hydrogen atom, a hydroxyl group or an
alkyl group having from 1 to 5 carbon atoms; and m denotes an
integer from 1 to 6.
[0019] The acid-decomposable group in the positive resist
composition is preferably at least one selected from among
tert-butyloxycarbonylmethyl group, tert-butyloxycarbonyl group,
tert-butyl group, tetrahydrofuranyl group, tetrahydropyranyl group,
ethoxyethyl group and methoxypropyl group.
[0020] In another aspect, the present invention provides a base
material including an organic polymer layer as a first resist layer
formed on a substrate, and a second resist layer formed on the
organic polymer layer, which second resist layer is composed of the
positive resist composition and has a thickness of from 50 to 200
nm.
DETAILED DESCRIPTION OF THE INVENTION
[0021] [Ingredient (A)]
[0022] Ingredient (A) for use in the present invention is an
alkali-soluble polysiloxane resin. Such alkali-soluble polysiloxane
resins as Ingredients (A) are not specifically limited as far as
they each have a phenolic hydroxyl group or carboxyl group which is
conducive to alkali-solubility and have a siloxane skeleton which
is conducive to dry etching resistance.
[0023] Among them, preferred Ingredients (A) for use in the present
invention are alkali-soluble polysiloxane resins having (a1) a
siloxane unit containing an alkali-soluble group and (a2) a
siloxane unit containing an alkali-insoluble group, which
alkali-insoluble group has no acid-decomposable group. These
alkali-soluble polysiloxane resins are highly soluble in alkali in
exposed portions and are highly insoluble in alkali in unexposed
portions and exhibit higher contrast and satisfactory definition
and can form resist patterns with good shapes.
[0024] Additionally, these alkali-soluble polysiloxane resins have
improved transparency to F.sub.2 excimer laser and can form resist
patterns with high definition upon the use of F.sub.2 excimer
laser.
[0025] In the siloxane unit (a1), the alkali-soluble group (e.g., a
phenolic hydroxyl group or carboxyl group) is preferably bonded to
the silicon atom of the siloxane group through a divalent organic
group. Such divalent organic groups include, for example, alkylene
groups each having from 1 to 10 carbon atoms, cycloalkylene groups
each having from 5 to 8 carbon atoms, and aralkylene groups each
having from 7 to 12 carbon atoms, of which aralkylene groups are
typically preferred.
[0026] As the siloxane group, a silsesquioxane unit represented by
the formula: --SiO.sub.3/2-- is preferred, since the resulting
resist composition can form a dense or tight film or coating and
exhibits satisfactory dry etching resistance.
[0027] Examples of the siloxane units (a1) for use herein are as
follows. 3
[0028] Of these siloxane units (a1), hydroxyaralkylsilsesquioxane
units are preferred since they are easily available at low costs,
of which hydroxybenzylsilsesquioxane unit is typically
preferred.
[0029] In the siloxane unit (a2), an alkali-insoluble group having
no acid-decomposable group is preferably bonded to the silicon atom
of the siloxane group. Preferred alkali-insoluble groups having no
acid-decomposable group include, for example, linear, branched or
cyclic, substituted or unsubstituted alkyl groups each having from
1 to 10 carbon atoms, cycloalkyl groups, aryl groups, and aralkyl
groups, of which aryl groups and aralkyl groups are typically
preferred.
[0030] The siloxane group in the siloxane unit (a2) is preferably a
silsesquioxane unit as in the unit (a1), as the resulting resist
composition can form a dense or tight film and exhibits
satisfactory dry etching resistance.
[0031] Examples of the siloxane units (a2) are as follows. 4
[0032] Preferred siloxane units (a2) are aralkylsilsesquioxane
units and arylsilsesquioxane units, since they are easily available
at low costs, of which benzylsilsesquioxane unit and
phenylsilsesquioxane unit are typically preferred.
[0033] Preferred Ingredients (A) each comprise a
hydroxybenzylsilsesquioxa- ne unit as the unit (a1) in combination
with a phenylsilsesquioxane unit as the unit (a2).
[0034] The molar ratio of the unit (a1) to the unit (a2) in
Ingredient (A) is from 1:9 to 9:1 and preferably from 5:5 to
8:2.
[0035] Ingredients (A) for use in the present invention can be
synthetically prepared, for example, according to the method
described in Japanese Patent No. 2567984, as described in
Preparation Example below.
[0036] Ingredient (A) has a weight average molecular weight of
preferably from 1000 to 100000 and more preferably from 2000 to
20000. If the weight average molecular weight is less than 1000,
the resulting resist composition is poor in film-forming property
and has decreased dry etching resistance. In contrast, if it
exceeds 100000, the resulting resist composition has decreased
dissolution rate in alkali to thereby deteriorate definition.
[0037] The content of Ingredient (A) is preferably from 3 to 10% by
weight and more preferably from 3 to 6% by weight based on the
total weight of the composition. If the content of Ingredient (A)
is less than 3% by weight, the resulting resist composition is poor
in film-forming property and has decreased dry etching resistance.
In contrast, if it exceeds 10% by weight, the film of the resist
composition cannot significantly have a desired thickness.
[0038] [Ingredient (B)]
[0039] Ingredients (B) for use in the present invention are not
specifically limited as far as they are acid generators composed of
a compound which generates an acid upon irradiation with active
light or radiant ray, and known or conventional acid generators can
be used. Preferred acid generators are onium salts each having a
fluoroalkylsulfonate ion as an anion.
[0040] Preferred cations of such onium salts are phenyliodonium or
phenylsulfonium which may have a substituent. Such substituents
include methyl group, ethyl group, propyl group, n-butyl group,
tert-butyl group and other lower alkyl groups, and methoxy group,
ethoxy group, and other lower alkoxy groups.
[0041] Preferred anions of the onium salts include
fluoroalkylsulfonate ions in which part or all of the hydrogen
atoms of an alkyl group having from 1 to 10 carbon atoms are
fluorinated. The more carbon atoms the alkyl group has or the less
amount of the hydrogen atoms is fluorinated, the less the strength
as sulfonic acid is. Accordingly, typically preferred anions are
fluoroalkylsulfonate ions in which all of the hydrogen atoms of an
alkyl group having from 1 to 5 carbon atoms are fluorinated.
[0042] Such preferred Ingredients (B) include, for example,
trifluoromethanesulfonate or nonafluorobutanesulfonate of
diphenyliodonium, trifluoromethanesulfonate or
nonafluorobutanesulfonate of bis(4-tert-butylphenyl)iodonium,
trifluoromethanesulfonate or nonafluorobutanesulfonate of
triphenylsulfonium, and trifluoromethanesulfonate or
nonafluorobutanesulfonate of tri(4-methylphenyl)sulfonium. Among
them, triphenylsulfonium trifluoromethanesulfonate and
triphenylsulfonium nonafluorobutanesulfonat- e are typically
preferred. Each of these Ingredients (B) can be used alone or in
combination.
[0043] The proportion of Ingredient (B) is preferably from 0.1 to
20 parts by weight and more preferably from 1 to 10 parts by weight
relative to 100 parts by weight of Ingredient (A). If the
proportion of Ingredient (B) is less than 0.1 part by weight, the
resulting resist composition cannot satisfactorily form a resist
pattern. In contrast, if it exceeds 20 parts by weight, the resist
composition cannot be significantly homogenous and has deteriorated
storage stability.
[0044] [Ingredient (C)]
[0045] Ingredients (C) for use in the present invention are
compounds in which at least one of the hydroxyl group of a phenolic
hydroxyl group or carboxyl group is substituted with an
acid-decomposable group. In these compounds, part of an
alkali-soluble group such as phenolic hydroxyl group or carboxyl
group is substituted with an acid-decomposable group that serves as
an alkali-dissolution inhibitory group, and the resulting compounds
are alkali-dissolution inhibitory compounds. However, in exposed
portions, the acid-decomposable group is decomposed by catalytic
reaction of an acid generated from the acid generator (B), and
these compounds become alkali-soluble. They are known dissolution
inhibitors for use in ternary system chemically amplified positive
resists. The dissolution inhibitor can be freely selected from
various proposed compounds carrying an induced acid-decomposable
group, such as low molecular weight compounds having molecular
weight of less than or equal to 1000, and high molecular weight
compounds having a weight average molecular weight of from 2000 to
20000, including polyhydroxystyrene.
[0046] Preferred Ingredients (C) include low molecular weight
compounds having a molecular weight of less than or equal to 1000
and having a phenolic hydroxyl group or carboxyl group, in which
part of the hydrogen atoms of the phenolic hydroxyl group or
carboxyl group is substituted with an acid-decomposable group.
[0047] Such low molecular weight compounds having a molecular
weight of less than or equal to 1000 include, for example,
[0048] bis(4-hydroxyphenyl)methane,
[0049] bis(2,3,4-trihydroxyphenyl)methane,
[0050] 2-(4-hydroxyphenyl)-2-(2'-hydroxyphenyl)propane,
[0051]
2-(2,3,4-trihydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane,
[0052] tris(4-hydroxyphenyl)methane,
[0053]
bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane,
[0054]
bis(4-hydroxy-2,5-dimethylphenyl)-2-hydroxyphenylmethane,
[0055]
bis(4-hydroxy-2,3,5-trimethylphenyl)-2-hydroxyphenylmethane,
[0056]
bis(4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxyphenylmethane,
[0057]
bis(4-hydroxy-2,5-dimethylphenyl)-3,4-dihydroxyphenylmethane,
[0058]
bis(4-hydroxy-3-methylphenyl)-3,4-dihydroxyphenylmethane,
[0059]
bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-4-hydroxyphenylmethane,
[0060]
bis(3-cyclohexyl-4-hydroxy-6-methylphenyl)-3,4-dihydroxyphenylmetha-
ne, and
[0061]
1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]b-
enzene;
[0062] binuclear to hexanuclear formaldehyde condensates of phenols
selected from among phenol, m-cresol, p-cresol and 2,5-xylenol;
[0063] biphenylpolycarboxylic acid,
[0064] naphthalene(di)carboxylic acid,
[0065] naphthalenetriacetic acid,
[0066] benzoylbenzoic acid,
[0067] anthracenecarboxylic acid,
[0068] a compound of the following formula: 5
[0069] 2,2'-bis(4-hydroxyphenyl)propanoic acid,
[0070] 4,4'-bis(hydroxyphenyl)pentanoic acid; and
[0071] cholic acid, deoxycholic acid, ursocholic acid, lithocholic
acid, and other bile acids.
[0072] The acid-decomposable group to be substituted on the
low-molecular weight compound can be freely selected from among
various known or conventional acid-decomposable groups. Preferred
acid-decomposable groups for use in the present invention include,
for example, tert-butyloxycarbonylmethyl group,
tert-butyloxycarbonylethyl group, and other
tertiary-alkyloxycarbonyl-substituted alkyl groups;
tert-butyloxycarbonyl group, tert-amyloxycarbonyl group, and other
tertiary-alkyloxycabonyl groups; tert-butyl group, tert-amyl group,
and other tertiary alkyl groups; tetrahydropyranyl group,
tetrahydrofuranyl group, and other cyclic ether groups; ethoxyethyl
group, methoxypropyl group, and other alkoxy-substituted alkyl
groups; 1-methylcyclohexyl group, 1-ethylcyclohexyl group, and
other 1-lower-alkyl-substituted cycloalkyl groups;
1-methyladamantyl group, 1-ethyladamantyl group, and other
1-lower-alkyl-substituted polycycloalkyl groups.
[0073] As Ingredient (C), low molecular weight compounds as listed
above are preferred, since the resulting resist composition has
high definition. As the low molecular weight compounds, preferred
are the compounds of following Formula (1) in which at least one
hydrogen atom of the hydroxyl group or carboxyl group is
substituted with an acid-decomposable group selected from among
tertiary-alkyloxycarbonyl-sub- stituted alkyl groups,
tertiary-alkyloxycarbonyl groups, tertiary alkyl groups, cyclic
ether groups and alkoxy-substituted alkyl groups: 6
[0074] wherein Z is a hydroxyl group or a carboxyl group; each of
R.sup.1, R.sup.2 and R.sup.3 is independently a hydrogen atom, a
hydroxyl group, a halogen atom, an alkoxy group having from 1 to 5
carbon atoms, or a linear, branched or cyclic alkyl group having
from 1 to 6 carbon atoms; A is a single bond or a divalent organic
group selected from the group consisting of alkylene groups each
having from 1 to 5 carbon atoms, alkylidene groups each having from
2 to 5 carbon atoms, alkylene groups each having from 1 to 5 carbon
atoms and further having a carboxyl group, alkylidene groups each
having from 2 to 5 carbon atoms and further having a carboxyl
group, a carbonyl group, and groups of the following formulae:
7
[0075] R.sup.4 is a hydrogen atom or an alkyl group having from 1
to 5 carbon atoms; each of R.sup.5 and R.sup.6 is independently a
hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group
having from 1 to 5 carbon atoms, or an alkoxy group having from 1
to 5 carbon atoms; each of R.sup.7 and R.sup.8 is independently an
alkyl group having from 1 to 5 carbon atoms; each of R.sup.9 and
R.sup.10 is independently a hydrogen atom, a hydroxyl group or an
alkyl group having from 1 to 5 carbon atoms; and m denotes an
integer from 1 to 6.
[0076] Examples of these compounds include the following compounds
(C-1) to (C-14). 89
[0077] The ratio of the hydroxyl group or carboxyl group of
Ingredient (C) substituted with an acid-decomposable group depends
on the type of the acid-decomposable group, and is preferably equal
to or more than 50%, and more preferably from about 60% to about
100% of the total hydroxyl groups or carboxyl groups in the
compound. If the substitution ratio is less than 50%, the resulting
resist composition exhibits low contrast and cannot form
satisfactory resist patterns.
[0078] Ingredient (C) for use in the present invention can be
synthetically prepared by any conventional processes. For example,
Ingredient (C) can be prepared by the following process. Initially,
the compound having a phenolic hydroxyl group or carboxyl group is
dissolved in an organic solvent, followed by the addition of a
basic catalyst and a compound corresponding to the
acid-decomposable group, and the reaction at a temperature from
about 20.degree. C. to about 70.degree. C. for about 1 to 10 hours.
The resulting reaction mixture is poured into large amounts of an
aqueous acid solution or water, is allowed to stand, and the
organic solvent layer (upper layer) is separated and is then rinsed
with several portions of an aqueous acid solution or water to
thereby remove the basic catalyst and salts in the reaction
mixture, followed by removal of the organic solvent under a reduced
pressure to thereby yield Ingredient (C).
[0079] The organic solvent can be any solvent in which the above
components are dissolved, and such organic solvents include, but
are not limited to, methanol, ethanol, propanol, butanol, ethylene
glycol, propylene glycol, and other alcohols; diethylene glycol
dimethyl ether, propylene glycol monopropyl ether,
1,2-dimethoxyethane, 1,2-diethoxyethane, and other ethers;
tetrahydrofuran, dioxane, and other cyclic ethers; acetone, methyl
ethyl ketone, methyl isobutyl ketone, methyl amyl ketone, and other
ketones; .gamma.-butyrolactone, and other cyclic esters; and
mixtures of these solvents.
[0080] The basic catalyst includes, but is not limited to,
ethylamine, ethanolamine, diethylamine, diisopropylamine,
diethanolamine, dicyclohexylamine, and other primary or secondary
amines; and trimethylamine, triethylamine, tripropylamine, and
other tertiary amines containing lower alkyl groups, of which
triethylamine is typically preferred.
[0081] The compound corresponding to the acid-decomposable group
includes, but is not limited to, di-tert-butyl dicarbonate
corresponding to tert-butyloxycarbonyl group; 2,3-dihydropyran
corresponding to tetrahydropyranyl group; and
1-chloro-1-ethoxyethane or ethyl vinyl ether corresponding to
ethoxyethyl group.
[0082] The aqueous acid solution is preferably composed of a weak
acid to avoid the decomposition of the acid-decomposable group by
action of the acid, and includes an acetic aqueous acid
solution.
[0083] The proportion of Ingredient (C) is preferably from 1 to 50
parts by weight, and more preferably from 10 to 30 parts by weight,
relative to 100 parts by weight of Ingredient (A). If the
proportion of Ingredient (C) is less than 1 part by weight, the
resulting resist composition exhibits low contrast and cannot form
satisfactory resist patterns. In contrast, if it exceeds 50 parts
by weight, the resist composition exhibits insufficient dry etching
resistance.
[0084] [Additional Ingredients]
[0085] The invented positive resist compositions may further
comprise additives according to necessity, in addition to the
aforementioned ingredients. Such additives include, for example,
salicylic acid, malonic acid, and other organic carboxylic acids;
and triethylamine, tributylamine, dibutylamine, triethanolamine,
and other secondary or tertiary amines.
[0086] The compositional ratio of the additive is preferably from
0.01 to 5% by weight, and more preferably from 0.05 to 1% by weight
relative to the weight of Ingredient (A). Within this range, the
resulting resist composition has improved sensitivity and can form
resist patters with good shapes.
[0087] The invented positive resist compositions may further
comprise any of compatible additives including halation inhibitors
and surfactants for improvement in coating performance, according
necessity and within ranges not adversely affecting the advantages
of the invention.
[0088] The invented positive resist compositions may be preferably
used as a solution prepared by dissolving the above-specified
ingredients in an appropriate solvent. Such solvents include
solvents for use in conventional positive resist compositions, such
as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl
ketone, 2-heptanone, and other ketones; ethylene glycol, propylene
glycol, diethylene glycol, ethylene glycol monoacetate, propylene
glycol monoacetate, diethylene glycol monoacetate, or their
monomethyl ethers, monoethyl ethers, monopropyl ethers, monobutyl
ethers or monophenyl ethers, and other polyhydric alcohols and
derivatives thereof; dioxane, and other cyclic ethers; and ethyl
lactate, methyl acetate, ethyl acetate, butyl acetate, methyl
pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl
ethoxypropionate, and other esters. Each of these solvents can be
used alone or in combination.
[0089] Practically, the positive resist composition of the present
invention may be preferably used, for example, in the following
manner. Each of the ingredients is dissolved in an appropriate
solvent as mentioned above to yield a coating solution; the coating
solution is then applied, using a spinner or the like, onto a
substrate such as a silicon wafer, and is then dried to form a
photosensitive layer; next, the photosensitive layer is irradiated
and is exposed with active light or radiant ray, through a
patterned mask; and the exposed portions of the film are then
dissolved and removed by dipping the substrate in a developer
solution, for example, an alkaline aqueous solution such as a 1% to
10% by weight tetramethylammonium hydroxide (TMAH) aqueous
solution, thus forming an image (resist pattern) being in exact
accordance with the mask pattern. To further improve the definition
of resist pattern, an anti-reflection coating is preferably formed
between the substrate and the photosensitive layer composed of the
invented resist composition.
[0090] The invented positive resist compositions each comprise a
resin having a polysiloxane skeleton and have satisfactory dry
etching resistance. Accordingly, they can form a thin film on a
substrate and are useful for the two-layer resist process. A base
material carrying such a two-layer resist can further improve the
definition of resist pattern.
[0091] Such base materials can be preferably prepared in the
following manner. Initially, an organic polymer layer 200 to 800 nm
thick as a lower resist layer is formed on a substrate such as a
silicon wafer, which organic polymer can be dry-etched by O.sub.2
reactive ion etching and includes novolak resins, or resists for
g-line or i-line; next, the invented positive resist composition is
applied on the organic polymer layer by spin coating to thereby
yield an upper resist layer. The upper resist layer has a thickness
of from 50 to 200 nm and preferably from 50 to 100 nm. The upper
resist layer is patterned in the same manner as above, and the
substrate is subjected to O.sub.2 reactive ion dry etching using
the patterned upper resist as a mask to thereby selectively etch
the lower resist layer, forming the same resist pattern on the
lower resist layer as in the upper resist layer.
[0092] In the examples below, KrF excimer laser was employed as a
light source, but the invented positive resist compositions are
also useful for processes using F.sub.2 excimer laser (157 nm),
extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and
other light sources having wavelengths equal to or shorter than
that of KrF excimer laser, and has high definition and can form
resist patterns with good sectional shapes. the invented positive
resist compositions are typically useful for processes using
F.sub.2 excimer laser as the light source.
EXAMPLES
[0093] The present invention will be illustrated in further detail
with reference to several examples and a comparative example
below.
Preparation Example
[0094] Ingredient (A) for use in the present invention was prepared
according to the method described in Japanese Patent No.
2567984.
[0095] In a 500-ml three-neck flask equipped with a stirrer, reflux
condenser, dropping funnel and thermometer, 84.0 g (1.0 mol) of
sodium hydrogencarbonate and 400 ml of water were placed, and to
this mixture, a mixture of 51.1 g (0.20 mol) of
p-methoxybenzyltrichlorosilane, 16.9 g (0.08 mol) of
phenyltrichlorosilane and 100 ml of diethyl ether was added
dropwise from the dropping funnel over 2 hours, followed by aging
for 1 hour. After the completion of reaction, the reaction mixture
was extracted with ether, and ether was removed by distillation
under a reduced pressure, and 0.2 g of a 10% by weight potassium
hydroxide solution was added to the resulting hydrolysate, followed
by aging at 200.degree. C. for 2 hours, to thereby yield a
copoly(pmethoxybenzylsilse- squioxane/phenylsilsesquioxane). The
above-prepared copolymer was dissolved in 150 ml of acetonitrile,
and to this solution, 80 g (0.40 mol) of trimethylsilyl iodide was
added, followed by stirring under reflux for 24 hours, addition of
50 ml of water, and stirring under reflux for further 12 hours.
After cooling, free iodine was reduced with an aqueous sodium
hydrogensulfite solution, followed by separation of the organic
layer and removal of the solvent by distillation under a reduced
pressure, and the resulting polymer was reprecipitated with acetone
and n-hexane, and was dried by heating under a reduced pressure to
thereby yield a target alkali-soluble polysiloxane resin, a
copolymer of the following formula having a
p-hydroxybenzylsilsesquioxane unit and a phenylsilsesquioxane
unit:
[(HO-ph-CH.sub.2) SiO.sub.3/2].sub.n/[(ph) SiO.sub.3/2].sub.m
[0096] wherein n/(n+m)=0.7, m/(n+m)=0.3; and ph is a phenyl
group.
Example 1
[0097] Ingredient (A): the resin obtained in Preparation Example (a
copoly(p-hydroxybenzyl/phenyl-silsesquioxane) comprising a
p-hydroxybenzylsilsesquioxane unit and a phenylsilsesquioxane unit
in a molar ratio of 70:30 and having a weight average molecular
weight of 7500)
[0098] Ingredient (B): triphenylsulfonium
trifluoromethanesulfonate
[0099] Ingredient (C): the following compound (C-5) 10
[0100] Additional Ingredient: triethanolamine
[0101] In 1660 parts by weight of propylene glycol monomethyl ether
monoacetate, 100 parts by weight of Ingredient (A), 3 parts by
weight of Ingredient (B), 30 parts by weight of Ingredient (C) and
0.3 part by weight of the additional ingredient were dissolved,
followed by filtration through a 0.1-.mu.m membrane filter, to
thereby yield a coating solution of a positive resist
composition.
[0102] The above-prepared coating solution of positive resist
composition was applied onto a 6-inch silicon wafer by spin
coating, and was dried on a hot plate at 90.degree. C. for 90
seconds to thereby form a resist layer 100 nm thick.
[0103] The resist layer was selectively irradiated with KrF excimer
laser (248 nm) using a reduced type projection aligner (available
from Canon Kabushiki Kaisha under the trade name of "FPA-3000EX3"),
was post-exposure baked (PEB) at 110.degree. C. for 90 seconds,
followed by puddle development with a 2.38% by weight
tetramethylammonium hydroxide aqueous solution at 23.degree. C. for
60 seconds. Next, the substrate was rinsed with pure water for 30
seconds to thereby yield a positive resist pattern.
[0104] Thus, a 180-nm line-and-space pattern with a satisfactory,
nearly rectangular sectional shape was obtained at an exposure of
22 mJ/cm.sup.2.
Example 2
[0105] A solution of a positive resist composition was prepared in
the same manner as in Example 1, except that 30 parts by weight of
the following compound (C-9) was used instead of Ingredient (C)
used in Example 1. 11
[0106] Next, a resist layer was formed and was patterned in the
same manner as in Example 1, to thereby yield a 180-nm
line-and-space pattern with a satisfactory, nearly rectangular
sectional shape at an exposure of 20 mJ/cm.sup.2.
Example 3
[0107] A solution of a positive resist composition was prepared in
the same manner as in Example 1, except that 30 parts by weight of
the following compound (C-10) was used instead of Ingredient (C)
used in Example 1. 12
[0108] Next, a resist layer was formed and was patterned in the
same manner as in Example 1, to thereby yield a 180-nm
line-and-space pattern with a satisfactory, nearly rectangular
sectional shape at an exposure of 22 mJ/cm.sup.2.
Example 4
[0109] A solution of a positive resist composition was prepared in
the same manner as in Example 1, except that 30 parts by weight of
the following compound (C-1) was used instead of Ingredient (C)
used in Example 1. 13
[0110] Next, a resist layer was formed and was patterned in the
same manner as in Example 1, to thereby yield a 180-nm
line-and-space pattern with a satisfactory, nearly rectangular
sectional shape at an exposure of 24 mJ/cm.sup.2.
Example 5
[0111] A resist for g-line (available from Tokyo Ohka Kogyo Co.,
Ltd., under the trade name of "OFPR-800") was applied as an under
layer onto a silicon substrate by spin coating, and was baked at
200.degree. C. for 30 minutes to thereby yield a first resist layer
640 nm thick. Separately, a resist solution was prepared in the
same manner as in Example 1, except that triethanolamine was not
used. The prepared resist solution was applied as an upper layer
onto the first resist layer by spin coating and was pre-baked at
90.degree. C. for 90 seconds to thereby yield a second resist layer
100 nm thick. The resulting substrate was selectively irradiated
with KrF excimer layer in the same manner as in Example 1 and was
post-exposure baked (PEB) at 110.degree. C. for 90 seconds,
followed by development in a 2.38% by weight tetramethylammonium
hydroxide aqueous solution for 60 seconds. The substrate was then
subjected to etching for 5 to 10 minutes by O.sub.2 reactive ion
etching (RIE) using a parallel plate type reactive ion etching
system to thereby yield a 180-nm hole pattern. This hole pattern
was obtained at an exposure of 52 mJ/cm.sup.2 and was a positive
resist pattern with a vertical sectional shape.
Comparative Example
[0112] A solution of a positive resist composition was obtained in
the same manner as in Example 1, except that a copolymer comprising
40% by mole of a hydroxybenzylsilsesquioxane unit, 40% by mole of a
phenylsilsesquioxane unit and 20% by mole of a
tert-butoxycarbonyloxybenz- ylsilsesquioxane unit was used as
Ingredient (A), and Ingredient (C) was not used.
[0113] Next, a resist layer was formed and was patterned in the
same manner as in Example 1, only to yield a 200-nm line-and-space
pattern at finest at an exposure of 25 mJ/cm.sup.2.
[0114] The invention can provide a positive resist composition that
is useful in processes using F.sub.2 excimer laser (157 nm),
extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and
other light sources having wavelengths equal to or shorter than
that of KrF excimer laser, and has high definition and can form
resist patterns with good sectional shapes, as well as a base
material carrying a resist layer composed of the positive resist
composition.
[0115] Other embodiments and variations will be obvious to those
skilled in the art, and this invention is not to be limited to the
specific matters stated above.
* * * * *